diff --git a/Miikkulainen_2013/README.md b/Miikkulainen_2013/README.md new file mode 100644 index 0000000000000000000000000000000000000000..b0293ced7ecaae711e51dba507e96b56bffbe98b --- /dev/null +++ b/Miikkulainen_2013/README.md @@ -0,0 +1,30 @@ +# Miikkulainen et al. (2013) + +Gold-standard data for: + +**Miikkulainen et al. (2013)** — *Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends*. *Journal of Applied Physics*, 113(2). +DOI: [10.1063/1.4757907](https://doi.org/10.1063/1.4757907) + +## Reference-table representation + +The controlled gold covers **9 logical reference-bearing tables (Tables I–IX)**, +represented as **44 pagewise physical table fragments**. + +All **44** fragments contain an explicit reference column and are therefore +positive examples for Step 3 and part of the Step 5 reference-matching subset. + +## Gold-standard contents + +| Step | Gold data | Scope | +|---|---|---:| +| **Step 1 — Table localization** | `gold.json` plus canonical crops in `crops/` | **9 logical reference tables / 44 pagewise fragments** | +| **Step 2 — Table reconstruction** | `tables//gold.csv` — authoritative structured table content | **44 gold CSVs** | +| **Step 3 — Reference-table classification** | `gold.json` — gold classification for each curated table fragment | **44 positive / 0 negative** | +| **Step 4 — Bibliography extraction** | `gold.json` — ordered gold bibliography | **2,389 bibliography entries** | +| **Step 5 — Reference matching** | `gold.json` — citation-cell to bibliography-position links | **1,478 citation cells / 4,384 links** | +| **Step 6 — Scholarly reference resolution** | `gold.json` — source-derived scholarly identities | **2,280 scholarly-reference records** | +| **Step 7 — Resolved-table export** | `gold.json` plus `tables//gold.csv` — deterministic expected resolved tables | **44 resolved fragment CSVs** | + +The Step folders contain **gold-side quality targets only**. Recorded model +predictions and run-specific diagnostics belong in the separate Tabulus-Runs +release. \ No newline at end of file diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_006_table_001.png b/Miikkulainen_2013/step1_table_localization/crops/page_006_table_001.png new file mode 100644 index 0000000000000000000000000000000000000000..489a48038fd26050135dfd17c883738ffa4bd49a --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_006_table_001.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:7c826d476ed7c2f0262c55f389c3261f7af3783396c586d5f06d937d75abcdae +size 78466 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_007_table_002.png b/Miikkulainen_2013/step1_table_localization/crops/page_007_table_002.png new file mode 100644 index 0000000000000000000000000000000000000000..eaa58f14a5aa22d755e331c55f419fc0ca237094 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_007_table_002.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:309c2c58c3936e7f5c3af9f03f7f6ce09740029132bf21b35fc962e46ee453a3 +size 181997 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_008_table_003.png b/Miikkulainen_2013/step1_table_localization/crops/page_008_table_003.png new file mode 100644 index 0000000000000000000000000000000000000000..1fe0ea694a2ab88be5dfcd7e7f3c9dd534934542 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_008_table_003.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:fb491634b7324204aa2f0c6c5a2b89a0a08ae8c64cd1d7ce22defa44690558e9 +size 182945 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_009_table_004.png b/Miikkulainen_2013/step1_table_localization/crops/page_009_table_004.png new file mode 100644 index 0000000000000000000000000000000000000000..4b1cb076f95a92ac695ef9dce2637ae1b064ba74 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_009_table_004.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:ccc74a8fbfe84fa0cd8a75f3f7f43bae5e9e986c0b5561b28c346a7da61c6f76 +size 180339 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_010_table_005.png b/Miikkulainen_2013/step1_table_localization/crops/page_010_table_005.png new file mode 100644 index 0000000000000000000000000000000000000000..cda0e9eda99e17852c5444c7702ddba4aa20990b --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_010_table_005.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:a302c4498ee802b543cbb37ad9cdecdb0480350197cd0c5cdaf052fd927eda99 +size 178413 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_011_table_006.png b/Miikkulainen_2013/step1_table_localization/crops/page_011_table_006.png new file mode 100644 index 0000000000000000000000000000000000000000..f89b5e3c8040de8f95fd132ff0041ca88457e29c --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_011_table_006.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:68142d770cd5c56a9db29efd5781006eaa05b630d1fb010a9bad9bc373325359 +size 167564 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_012_table_007.png b/Miikkulainen_2013/step1_table_localization/crops/page_012_table_007.png new file mode 100644 index 0000000000000000000000000000000000000000..c6d5c40fd19f06f2059503067546cdcccc28dca7 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_012_table_007.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:ca4cf4a9db939b707532779807af48aad51ee1197a8deb399133874f21201a2c +size 167373 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_013_table_008.png b/Miikkulainen_2013/step1_table_localization/crops/page_013_table_008.png new file mode 100644 index 0000000000000000000000000000000000000000..ae7cbadaeb68a83edbfea028213d8dcde3fb4446 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_013_table_008.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:1c020df28fb5cc58d137919587e1a449ae400cf38a17de29ce56e347a4f78bd1 +size 173684 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_014_table_009.png b/Miikkulainen_2013/step1_table_localization/crops/page_014_table_009.png new file mode 100644 index 0000000000000000000000000000000000000000..6a1634bb0ca703b1b42e996ea7e93367bc34e144 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_014_table_009.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:2a23ba2025fe1aa09ea9110cd0eb3f99d4a60da5a83e3fb33b462621ee7b1ea9 +size 190774 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_015_table_010.png b/Miikkulainen_2013/step1_table_localization/crops/page_015_table_010.png new file mode 100644 index 0000000000000000000000000000000000000000..708a484843cc89d79ef851939b0d37de5b4b380d --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_015_table_010.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:ac5ea140d75ea75039587617348889610fe262f22b8c292163eee9e939acee05 +size 191629 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_016_table_011.png b/Miikkulainen_2013/step1_table_localization/crops/page_016_table_011.png new file mode 100644 index 0000000000000000000000000000000000000000..ebe09e549a07499b081491995da2df7cff58e990 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_016_table_011.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:30756d98079bbbeb37961edffe4c85a97ac0a8a8991978a4e8e65bfa3b601073 +size 167324 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_017_table_012.png b/Miikkulainen_2013/step1_table_localization/crops/page_017_table_012.png new file mode 100644 index 0000000000000000000000000000000000000000..ea8ba58a3f7e75f6649048e3ecae2b83605177f7 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_017_table_012.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:364eff4bfe80313baf81b27348ce10d169a65975127df30cd9aa90ea869c648b +size 182519 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_018_table_013.png b/Miikkulainen_2013/step1_table_localization/crops/page_018_table_013.png new file mode 100644 index 0000000000000000000000000000000000000000..dd9526e2963392a2d0eab0ecea7937de5c75a9ba --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_018_table_013.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:36cb49dca0aa9c7c4a4c6a3d2b2acd10ce177432e7c7e9a46ce59d222d145703 +size 167997 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_019_table_014.png b/Miikkulainen_2013/step1_table_localization/crops/page_019_table_014.png new file mode 100644 index 0000000000000000000000000000000000000000..f5a1db296aedade184e715aeecdeb8b83b3bf125 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_019_table_014.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:8e17ec2cf9acca9ff9e9fd0cdc2e6b8c8bd467531f29ff49c8d6e4958fc979e8 +size 192440 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_020_table_015.png b/Miikkulainen_2013/step1_table_localization/crops/page_020_table_015.png new file mode 100644 index 0000000000000000000000000000000000000000..1daf89109dfded881b9798f8d9214229822f76f6 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_020_table_015.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:b2cdf54b7eacaf13f06d71de861a236d953e1bb3cd492f674daad5b12595359f +size 197545 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_021_table_016.png b/Miikkulainen_2013/step1_table_localization/crops/page_021_table_016.png new file mode 100644 index 0000000000000000000000000000000000000000..3de92344141514eacd040ec3531855ad1fea4321 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_021_table_016.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:1a50abf28be667494580ab499039ccb03466c5d40810a15c49654756ccf7a913 +size 163940 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_022_table_017.png b/Miikkulainen_2013/step1_table_localization/crops/page_022_table_017.png new file mode 100644 index 0000000000000000000000000000000000000000..94b94ee91d858b152d38cf3eab57b9fb423a0dcb --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_022_table_017.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:80cac5085bb325509f7715c721a5ea75149abea58f28f764bf9574246f85976e +size 95764 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_026_table_018.png b/Miikkulainen_2013/step1_table_localization/crops/page_026_table_018.png new file mode 100644 index 0000000000000000000000000000000000000000..09132e141fd0e64ab2989cb3a05b640ed984274f --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_026_table_018.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:99b6346e0cd7b4058acb944bdedcc8039d4c9d79225e33d747f84a86ae84ce53 +size 146359 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_028_table_019.png b/Miikkulainen_2013/step1_table_localization/crops/page_028_table_019.png new file mode 100644 index 0000000000000000000000000000000000000000..64208077f31f3e0d0cbfa75e557c2c6fe3ca51d8 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_028_table_019.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:e3c59a08170eed1fcd7f87c37b0978f627f6023ed6b8453cc5629f8f4b5569bc +size 162805 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_029_table_020.png b/Miikkulainen_2013/step1_table_localization/crops/page_029_table_020.png new file mode 100644 index 0000000000000000000000000000000000000000..c0c1d6000be63dc9e95273e568410624af4eecec --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_029_table_020.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:b609bb79fbcb8c41e69b08d90c10ae9c83bc7bea2b320a107026ac92531523c4 +size 162165 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_030_table_021.png b/Miikkulainen_2013/step1_table_localization/crops/page_030_table_021.png new file mode 100644 index 0000000000000000000000000000000000000000..a7c9b070c6859f8ba35efd4dad356cd07e382161 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_030_table_021.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:65201cbb1205631db396838f4a87a3ed1127be4427e762363365a7ec8886f27f +size 161745 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_031_table_022.png b/Miikkulainen_2013/step1_table_localization/crops/page_031_table_022.png new file mode 100644 index 0000000000000000000000000000000000000000..3f021fab4f362f9a0ec19afb90107a5add34c759 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_031_table_022.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:56c2b14bff99693de9f2bcbf5a2962193aa999f7508167170e2a5ac6d69a1fca +size 177559 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_032_table_023.png b/Miikkulainen_2013/step1_table_localization/crops/page_032_table_023.png new file mode 100644 index 0000000000000000000000000000000000000000..6688bd624fa37ef7a756346997dfc361c89b9d11 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_032_table_023.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:4d22c650c03b097648261efa022792b1d7413d8d8eae5990cb32866f427c69b1 +size 187080 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_033_table_024.png b/Miikkulainen_2013/step1_table_localization/crops/page_033_table_024.png new file mode 100644 index 0000000000000000000000000000000000000000..ede964336866cc38f1862f9b595b4038b8622201 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_033_table_024.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:07c1974025cbd43117f4d15fdbcafb1b69d2eb73ff3fe080d6e1ab19287efe58 +size 120630 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_034_table_025.png b/Miikkulainen_2013/step1_table_localization/crops/page_034_table_025.png new file mode 100644 index 0000000000000000000000000000000000000000..eed609d67567c55db23fa4b7af3fbff6539895dc --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_034_table_025.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:a56b8fbf50b2c6af323f3ff2f17ee9b67d03c191658a0f411c737beb03d88f4e +size 153844 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_035_table_026.png b/Miikkulainen_2013/step1_table_localization/crops/page_035_table_026.png new file mode 100644 index 0000000000000000000000000000000000000000..eb13e01a8664bfa6bb268753f86ae5217842b5db --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_035_table_026.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:f27bfc3b282674b372b10268e8f16af9d4e86802529ea5e9c5d826007ab562c4 +size 252168 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_036_table_027.png b/Miikkulainen_2013/step1_table_localization/crops/page_036_table_027.png new file mode 100644 index 0000000000000000000000000000000000000000..20b98e403c30de8d67973965ccc59f0c0f42e334 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_036_table_027.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:7fdfed363bf7e89f21f6a93ecff49f9c02bc2c53a0e82c4bfd311da59aef728c +size 172853 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_037_table_028.png b/Miikkulainen_2013/step1_table_localization/crops/page_037_table_028.png new file mode 100644 index 0000000000000000000000000000000000000000..45f1dea2d95d303e17927bcb6f1324f1a2d81ca7 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_037_table_028.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:ac80a3b0235ee6514b522004063ae018229e39d47cafd14c612be7af7c019b2c +size 180858 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_038_table_029.png b/Miikkulainen_2013/step1_table_localization/crops/page_038_table_029.png new file mode 100644 index 0000000000000000000000000000000000000000..642634f3e6cca199725d36a660d8d51893225d95 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_038_table_029.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:7ec050e6cedae4cbed75b66bdb760b87173067269beecdef97d1985db164a4a6 +size 153402 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_039_table_030.png b/Miikkulainen_2013/step1_table_localization/crops/page_039_table_030.png new file mode 100644 index 0000000000000000000000000000000000000000..c2724ece63fa7f88a2d2bbec6ee2c935f978228a --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_039_table_030.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:ec7a838be56489c133f19e9b1391aaca6feb7c81367e1e458f6f65d341d04389 +size 228110 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_040_table_031.png b/Miikkulainen_2013/step1_table_localization/crops/page_040_table_031.png new file mode 100644 index 0000000000000000000000000000000000000000..d78b34e31a44431927930e9f1f5c83369782458e --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_040_table_031.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:6576c62348fc1c5875c97cb0850aa3e32d666763b957968ff4af10b1cf7aff95 +size 208995 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_041_table_032.png b/Miikkulainen_2013/step1_table_localization/crops/page_041_table_032.png new file mode 100644 index 0000000000000000000000000000000000000000..b93d8346c5831da89c1d0273a2bed35f29c004aa --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_041_table_032.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:808ad7d9f4ccf277b04b9136177397d56e414dacf97e124a1c961f7713b538c9 +size 224986 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_048_table_033.png b/Miikkulainen_2013/step1_table_localization/crops/page_048_table_033.png new file mode 100644 index 0000000000000000000000000000000000000000..5e0cc62bc5d980847b3d28ea2a8537a5d57e5dfb --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_048_table_033.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:149ee6b4ff846991675a5be876ccaf5b541f09170a763fb16d7e3f1f77667488 +size 187943 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_049_table_034.png b/Miikkulainen_2013/step1_table_localization/crops/page_049_table_034.png new file mode 100644 index 0000000000000000000000000000000000000000..8b402f39a249c912dad7e18597e67cc487b23e57 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_049_table_034.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:c84e76c6b056b8cf1f114cbebb13f7caf306ff750ca55c40ae4f2c85f1336f9e +size 177919 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_050_table_035.png b/Miikkulainen_2013/step1_table_localization/crops/page_050_table_035.png new file mode 100644 index 0000000000000000000000000000000000000000..23062a7645581da700ba18cfb2d0bdd3f65bb0b5 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_050_table_035.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:cd328dc55d2a143709ab5ff8077366b7558729f70d4128ba4a6838e4b486b415 +size 201197 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_051_table_036.png b/Miikkulainen_2013/step1_table_localization/crops/page_051_table_036.png new file mode 100644 index 0000000000000000000000000000000000000000..79ebd2808c50744692bef500386b09a1f89aaec3 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_051_table_036.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:2c3e7ebda78dd431fe5f445bf53e6f490671cdeb56719dca771f084009aa6c58 +size 192184 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_054_table_037.png b/Miikkulainen_2013/step1_table_localization/crops/page_054_table_037.png new file mode 100644 index 0000000000000000000000000000000000000000..e911cda55c985c3ff0358cd00a88c952670cffbb --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_054_table_037.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:4db090160a69992342ef094051c6be1f8d48f6cc04b16f88bd64e74ea0135f90 +size 187044 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_055_table_038.png b/Miikkulainen_2013/step1_table_localization/crops/page_055_table_038.png new file mode 100644 index 0000000000000000000000000000000000000000..fe3fb5471c503f7046d0b27df17e5089ecd75c28 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_055_table_038.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:6d3ddda2835d44c15b6777d430ed1a9eec0fa79e6ab501dc74e7366569cfcbe5 +size 164419 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_056_table_039.png b/Miikkulainen_2013/step1_table_localization/crops/page_056_table_039.png new file mode 100644 index 0000000000000000000000000000000000000000..bbceee058fb1f1575c571ec807315def995e557f --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_056_table_039.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:71191252478ae262fcffb06aa2046f962725c9d8c88b5336a88469920159f645 +size 135888 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_059_table_040.png b/Miikkulainen_2013/step1_table_localization/crops/page_059_table_040.png new file mode 100644 index 0000000000000000000000000000000000000000..ebdf7bb4c052d5660d79f14ff8071987a2dd3a82 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_059_table_040.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:e1c33f766996512425d902d9eccd7c99115cb13a665ec9b60427b162c76ae7e8 +size 263070 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_060_table_041.png b/Miikkulainen_2013/step1_table_localization/crops/page_060_table_041.png new file mode 100644 index 0000000000000000000000000000000000000000..90eb089d683d5132e66c18b632c0d0a32f69080a --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_060_table_041.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:251246b9ed39f73d32c32b3164323b2dc0b9505efc2b38abdbf4330932f0cbc7 +size 210354 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_061_table_042.png b/Miikkulainen_2013/step1_table_localization/crops/page_061_table_042.png new file mode 100644 index 0000000000000000000000000000000000000000..7abb084c5048ec031365dbec76aae091cd7ef431 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_061_table_042.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:4938d56bef9fdb03dcfd3389912ea865581ebac264be5dbec6924a9200ebdb55 +size 226048 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_062_table_043.png b/Miikkulainen_2013/step1_table_localization/crops/page_062_table_043.png new file mode 100644 index 0000000000000000000000000000000000000000..ae2c9cc204f147d332bbabb0aafac2b1c206d447 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_062_table_043.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:7214c0e0aac6909e9ac6c16a48b84d199dcfec370026625cfa1b2761db149cbd +size 98517 diff --git a/Miikkulainen_2013/step1_table_localization/crops/page_062_table_044.png b/Miikkulainen_2013/step1_table_localization/crops/page_062_table_044.png new file mode 100644 index 0000000000000000000000000000000000000000..406b9ac13f04773ea6541a8c1829813826d3514b --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/crops/page_062_table_044.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:300a16e646c0e724c31daaa911ab45beb0e2757dc04e4bb583dd5408201f0c05 +size 70607 diff --git a/Miikkulainen_2013/step1_table_localization/gold.json b/Miikkulainen_2013/step1_table_localization/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..d25fe0b41c7cfbf91a23f71fc309768000962cd4 --- /dev/null +++ b/Miikkulainen_2013/step1_table_localization/gold.json @@ -0,0 +1,583 @@ +{ + "schema_version": 1, + "task": "step1_table_localization", + "paper_id": "P251", + "public_id": "Miikkulainen_2013", + "gold_type": "controlled_gold", + "scope": "Curated physical table fragments used as the controlled reference-aware evaluation substrate.", + "table_count": 44, + "tables": [ + { + "table_id": "page_006_table_001", + "page": 6, + "table_number": 1, + "crop": "crops/page_006_table_001.png", + "annotation": { + "page_nr": 6, + "image": "tables/page_006_table_001/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_006_table_001", + "legacy_table_number": 1 + } + }, + { + "table_id": "page_007_table_002", + "page": 7, + "table_number": 2, + "crop": "crops/page_007_table_002.png", + "annotation": { + "page_nr": 7, + "image": "tables/page_007_table_002/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_007_table_002", + "legacy_table_number": 2 + } + }, + { + "table_id": "page_008_table_003", + "page": 8, + "table_number": 3, + "crop": "crops/page_008_table_003.png", + "annotation": { + "page_nr": 8, + "image": "tables/page_008_table_003/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_008_table_003", + "legacy_table_number": 3 + } + }, + { + "table_id": "page_009_table_004", + "page": 9, + "table_number": 4, + "crop": "crops/page_009_table_004.png", + "annotation": { + "page_nr": 9, + "image": "tables/page_009_table_004/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_009_table_004", + "legacy_table_number": 4 + } + }, + { + "table_id": "page_010_table_005", + "page": 10, + "table_number": 5, + "crop": "crops/page_010_table_005.png", + "annotation": { + "page_nr": 10, + "image": "tables/page_010_table_005/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_010_table_005", + "legacy_table_number": 5 + } + }, + { + "table_id": "page_011_table_006", + "page": 11, + "table_number": 6, + "crop": "crops/page_011_table_006.png", + "annotation": { + "page_nr": 11, + "image": "tables/page_011_table_006/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_011_table_006", + "legacy_table_number": 6 + } + }, + { + "table_id": "page_012_table_007", + "page": 12, + "table_number": 7, + "crop": "crops/page_012_table_007.png", + "annotation": { + "page_nr": 12, + "image": "tables/page_012_table_007/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_012_table_007", + "legacy_table_number": 7 + } + }, + { + "table_id": "page_013_table_008", + "page": 13, + "table_number": 8, + "crop": "crops/page_013_table_008.png", + "annotation": { + "page_nr": 13, + "image": "tables/page_013_table_008/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_013_table_008", + "legacy_table_number": 8 + } + }, + { + "table_id": "page_014_table_009", + "page": 14, + "table_number": 9, + "crop": "crops/page_014_table_009.png", + "annotation": { + "page_nr": 14, + "image": "tables/page_014_table_009/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_014_table_009", + "legacy_table_number": 9 + } + }, + { + "table_id": "page_015_table_010", + "page": 15, + "table_number": 10, + "crop": "crops/page_015_table_010.png", + "annotation": { + "page_nr": 15, + "image": "tables/page_015_table_010/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_015_table_010", + "legacy_table_number": 10 + } + }, + { + "table_id": "page_016_table_011", + "page": 16, + "table_number": 11, + "crop": "crops/page_016_table_011.png", + "annotation": { + "page_nr": 16, + "image": "tables/page_016_table_011/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_016_table_011", + "legacy_table_number": 11 + } + }, + { + "table_id": "page_017_table_012", + "page": 17, + "table_number": 12, + "crop": "crops/page_017_table_012.png", + "annotation": { + "page_nr": 17, + "image": "tables/page_017_table_012/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_017_table_012", + "legacy_table_number": 12 + } + }, + { + "table_id": "page_018_table_013", + "page": 18, + "table_number": 13, + "crop": "crops/page_018_table_013.png", + "annotation": { + "page_nr": 18, + "image": "tables/page_018_table_013/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_018_table_013", + "legacy_table_number": 13 + } + }, + { + "table_id": "page_019_table_014", + "page": 19, + "table_number": 14, + "crop": "crops/page_019_table_014.png", + "annotation": { + "page_nr": 19, + "image": "tables/page_019_table_014/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_019_table_014", + "legacy_table_number": 14 + } + }, + { + "table_id": "page_020_table_015", + "page": 20, + "table_number": 15, + "crop": "crops/page_020_table_015.png", + "annotation": { + "page_nr": 20, + "image": "tables/page_020_table_015/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_020_table_015", + "legacy_table_number": 15 + } + }, + { + "table_id": "page_021_table_016", + "page": 21, + "table_number": 16, + "crop": "crops/page_021_table_016.png", + "annotation": { + "page_nr": 21, + "image": "tables/page_021_table_016/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_021_table_016", + "legacy_table_number": 16 + } + }, + { + "table_id": "page_022_table_017", + "page": 22, + "table_number": 17, + "crop": "crops/page_022_table_017.png", + "annotation": { + "page_nr": 22, + "image": "tables/page_022_table_017/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_022_table_017", + "legacy_table_number": 17 + } + }, + { + "table_id": "page_026_table_018", + "page": 26, + "table_number": 18, + "crop": "crops/page_026_table_018.png", + "annotation": { + "page_nr": 26, + "image": "tables/page_026_table_018/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_026_table_018", + "legacy_table_number": 18 + } + }, + { + "table_id": "page_028_table_019", + "page": 28, + "table_number": 19, + "crop": "crops/page_028_table_019.png", + "annotation": { + "page_nr": 28, + "image": "tables/page_028_table_019/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_028_table_019", + "legacy_table_number": 19 + } + }, + { + "table_id": "page_029_table_020", + "page": 29, + "table_number": 20, + "crop": "crops/page_029_table_020.png", + "annotation": { + "page_nr": 29, + "image": "tables/page_029_table_020/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_029_table_020", + "legacy_table_number": 20 + } + }, + { + "table_id": "page_030_table_021", + "page": 30, + "table_number": 21, + "crop": "crops/page_030_table_021.png", + "annotation": { + "page_nr": 30, + "image": "tables/page_030_table_021/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_030_table_021", + "legacy_table_number": 21 + } + }, + { + "table_id": "page_031_table_022", + "page": 31, + "table_number": 22, + "crop": "crops/page_031_table_022.png", + "annotation": { + "page_nr": 31, + "image": "tables/page_031_table_022/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_031_table_022", + "legacy_table_number": 22 + } + }, + { + "table_id": "page_032_table_023", + "page": 32, + "table_number": 23, + "crop": "crops/page_032_table_023.png", + "annotation": { + "page_nr": 32, + "image": "tables/page_032_table_023/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_032_table_023", + "legacy_table_number": 23 + } + }, + { + "table_id": "page_033_table_024", + "page": 33, + "table_number": 24, + "crop": "crops/page_033_table_024.png", + "annotation": { + "page_nr": 33, + "image": "tables/page_033_table_024/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_033_table_024", + "legacy_table_number": 24 + } + }, + { + "table_id": "page_034_table_025", + "page": 34, + "table_number": 25, + "crop": "crops/page_034_table_025.png", + "annotation": { + "page_nr": 34, + "image": "tables/page_034_table_025/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_034_table_025", + "legacy_table_number": 25 + } + }, + { + "table_id": "page_035_table_026", + "page": 35, + "table_number": 26, + "crop": "crops/page_035_table_026.png", + "annotation": { + "page_nr": 35, + "image": "tables/page_035_table_026/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_035_table_026", + "legacy_table_number": 26 + } + }, + { + "table_id": "page_036_table_027", + "page": 36, + "table_number": 27, + "crop": "crops/page_036_table_027.png", + "annotation": { + "page_nr": 36, + "image": "tables/page_036_table_027/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_036_table_027", + "legacy_table_number": 27 + } + }, + { + "table_id": "page_037_table_028", + "page": 37, + "table_number": 28, + "crop": "crops/page_037_table_028.png", + "annotation": { + "page_nr": 37, + "image": "tables/page_037_table_028/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_037_table_028", + "legacy_table_number": 28 + } + }, + { + "table_id": "page_038_table_029", + "page": 38, + "table_number": 29, + "crop": "crops/page_038_table_029.png", + "annotation": { + "page_nr": 38, + "image": "tables/page_038_table_029/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_038_table_029", + "legacy_table_number": 29 + } + }, + { + "table_id": "page_039_table_030", + "page": 39, + "table_number": 30, + "crop": "crops/page_039_table_030.png", + "annotation": { + "page_nr": 39, + "image": "tables/page_039_table_030/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_039_table_030", + "legacy_table_number": 30 + } + }, + { + "table_id": "page_040_table_031", + "page": 40, + "table_number": 31, + "crop": "crops/page_040_table_031.png", + "annotation": { + "page_nr": 40, + "image": "tables/page_040_table_031/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_040_table_031", + "legacy_table_number": 31 + } + }, + { + "table_id": "page_041_table_032", + "page": 41, + "table_number": 32, + "crop": "crops/page_041_table_032.png", + "annotation": { + "page_nr": 41, + "image": "tables/page_041_table_032/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_041_table_032", + "legacy_table_number": 32 + } + }, + { + "table_id": "page_048_table_033", + "page": 48, + "table_number": 33, + "crop": "crops/page_048_table_033.png", + "annotation": { + "page_nr": 48, + "image": "tables/page_048_table_033/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_048_table_033", + "legacy_table_number": 33 + } + }, + { + "table_id": "page_049_table_034", + "page": 49, + "table_number": 34, + "crop": "crops/page_049_table_034.png", + "annotation": { + "page_nr": 49, + "image": "tables/page_049_table_034/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_049_table_034", + "legacy_table_number": 34 + } + }, + { + "table_id": "page_050_table_035", + "page": 50, + "table_number": 35, + "crop": "crops/page_050_table_035.png", + "annotation": { + "page_nr": 50, + "image": "tables/page_050_table_035/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_050_table_035", + "legacy_table_number": 35 + } + }, + { + "table_id": "page_051_table_036", + "page": 51, + "table_number": 36, + "crop": "crops/page_051_table_036.png", + "annotation": { + "page_nr": 51, + "image": "tables/page_051_table_036/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_051_table_036", + "legacy_table_number": 36 + } + }, + { + "table_id": "page_054_table_037", + "page": 54, + "table_number": 37, + "crop": "crops/page_054_table_037.png", + "annotation": { + "page_nr": 54, + "image": "tables/page_054_table_037/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_054_table_037", + "legacy_table_number": 37 + } + }, + { + "table_id": "page_055_table_038", + "page": 55, + "table_number": 38, + "crop": "crops/page_055_table_038.png", + "annotation": { + "page_nr": 55, + "image": "tables/page_055_table_038/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_055_table_038", + "legacy_table_number": 38 + } + }, + { + "table_id": "page_056_table_039", + "page": 56, + "table_number": 39, + "crop": "crops/page_056_table_039.png", + "annotation": { + "page_nr": 56, + "image": "tables/page_056_table_039/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_056_table_039", + "legacy_table_number": 39 + } + }, + { + "table_id": "page_059_table_040", + "page": 59, + "table_number": 40, + "crop": "crops/page_059_table_040.png", + "annotation": { + "page_nr": 59, + "image": "tables/page_059_table_040/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_059_table_040", + "legacy_table_number": 40 + } + }, + { + "table_id": "page_060_table_041", + "page": 60, + "table_number": 41, + "crop": "crops/page_060_table_041.png", + "annotation": { + "page_nr": 60, + "image": "tables/page_060_table_041/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_060_table_041", + "legacy_table_number": 41 + } + }, + { + "table_id": "page_061_table_042", + "page": 61, + "table_number": 42, + "crop": "crops/page_061_table_042.png", + "annotation": { + "page_nr": 61, + "image": "tables/page_061_table_042/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_061_table_042", + "legacy_table_number": 42 + } + }, + { + "table_id": "page_062_table_043", + "page": 62, + "table_number": 43, + "crop": "crops/page_062_table_043.png", + "annotation": { + "page_nr": 62, + "image": "tables/page_062_table_043/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_062_table_043", + "legacy_table_number": 43 + } + }, + { + "table_id": "page_062_table_044", + "page": 62, + "table_number": 44, + "crop": "crops/page_062_table_044.png", + "annotation": { + "page_nr": 62, + "image": "tables/page_062_table_044/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_062_table_044", + "legacy_table_number": 44 + } + } + ] +} diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_006_table_001/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_006_table_001/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..95a4f27761dd2dd2db793406fc40fcd901fcfc0f --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_006_table_001/gold.csv @@ -0,0 +1,27 @@ +Z,Material,Reactant A,Reactant B,References +3,Lithium,,, +,Li2O (LiOH),Li(OtBu),H2O,44 +,Li2CO3,Li(thd),O3,45 +5,Boron,,, +,B2O3,BBr3,H2O,46 and 47 +,BN,BCl3,NH3,48 +,,BBr3,NH3,49 and 50 +,,BBr3,NH3☼,50 +,BxPyOz,B(OMe)3,POCl3,51 and 52 +6,Carbon,,, +,C b,CFx,H c,53 +,,CCl3,H c,54 +12,Magnesium,,, +,MgO,MgCp2,H2O,55–62 +,,Mg(CpEt)2,H2O,63 +,,Mg(thd)2,H2O2,64 +,,Mg(thd)2,O3,65 +,MgF2,Mg(thd)2,TiF4,66 and 67 +,,Mg(thd)2,TaF5,68 +,MgTe,Mg,Te,69 and 70 +13,Aluminum,,, +,Al,AlMe3,H2⚡,71 and 72 +,Al2O3,AlCl3,H2O,73–98 +,,AlCl3,H2O + cat. g,99 +,,AlCl3,O2,100 and 101 +,,AlCl3,ROH d,"80, 88, and 102" diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_007_table_002/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_007_table_002/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..20725d1a1acd0ebf231fd37d7b8a50e7e54bfaf4 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_007_table_002/gold.csv @@ -0,0 +1,59 @@ +Z,Material,Reactant A,Reactant B,References +,,AlCl3,Al(OEt)3,103 +,,AlCl3,Al(OiPr)3,103 and 104 +,,AlBr3,H2O,105 +,,AlMe3,H2O,"41, 59, 86, 94, 95, 98, and 106–396" +,,AlMe3,H2O ☼,397 and 398 +,,AlMe3,H2O2,325 and 399–407 +,,AlMe3,O3,"152, 160, 161, 186, 199, 216, 236, 267, 270, 333, 380, 381, and 408–428" +,,AlMe3,O2⚡,"199, 242, 310, 336, 354, 357, 372, 375, 426, and 429–456" +,,AlMe3,O2 + H2O + H2O2,457 +,,AlMe3,CO2⚡,458 +,,AlMe3,N2O,402 +,,AlMe3,NO2,110 +,,AlMe3,N2O4,459 +,,AlMe3,iPrOH,460 and 461 +,,AlMe3,nPrOH,281 +,,AlMe3,Al(OiPr)3,103 +,,AlMe2Cl,H2O,462 and 463 +,,AlMe2OiPr,H2O,464 and 465 +,,AlMe2OiPr,O2⚡,435 +,,AlEt3,H2O,56 +,,Al(OEt)3,H2O,80 +,,Al(OEt)3,O2,80 +,,Al(OnPr)3,H2O,80 and 88 +,,Al(OnPr)3,O2,80 +,,Al(mmp)3,H2O,466 +,,AlH3N:(C5H11),O2⚡,467 +,,Al(NEt2)3,H2O,468–471 +,,Al(NEt2)3,O3,472–475 +,,Al(NiPr2)3,H2O,470 +,,Al(iPrAMD)Et2,H2O,476 +,AlN,AlCl3,NH3,477 and 478 +,,AlCl3,NH3 + H2⚡,479 and 480 +,,AlMe3,NH3,"125, 132, 338, 478, and 481–490" +,,AlMe3,NH3 ☼,491 +,,AlMe3,NH3 + N2⚡,492 +,,AlMe3,NH3 + H2⚡,493 +,,AlMe3,N2 + H2⚡,494 +,,AlEt3,NH3,495 and 496 +,,Me3N:AlH3,NH3,497 +,,Me2EtN:AlH3,NH3,498–500 +,,Al(NMe2)3,NH3,501 +,AlP,AlMe2H,PH3,502–504 +,,Me2EtN:AlH3,PH3,505 +,AlAs,AlCl3,AsH3,506 and 507 +,,AlMe3,AsH3,508–518 +,,AlMe2H,AsH3,519–523 +,,AlEt3,AsH3,512 and 514 +,,AliBu3,AsH3,524 +,,Me3N:AlH3,AsH3,525 +,,Me3N:AlH3,As(NMe2)3,526 and 527 +,,Me2EtN:AlH3,AsH3,523 and 528–533 +,AlSb,AlCl3,(Et3Si)3Sb,534 +,AlxSiyOz,AlCl3,Si(OEt)4,535 +,Al2O3/ SiO2 f,AlMe3,(tBuO)3\-SiOH,"43, 536, and 537" +,AlxTiyOz,AlCl3,Ti(OEt)4,103 +,,AlCl3,Ti(OiPr)4,103 +,,AlMe3,Ti(OiPr)4,103 +,AlxCryOz,AlMe3,CrO2Cl2,538 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_008_table_003/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_008_table_003/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..c19814b89dbcabb94252a8ead3aca8e05af05d97 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_008_table_003/gold.csv @@ -0,0 +1,60 @@ +Z,Material,Reactant A,Reactant B,References +,AlxZryOz,Al(OEt)3,ZrCl4,103 +,AlxHfyOz,Al(OEt)3,HfCl4,103 +,AlLaO3,[LaAl(OiPr)6\-(iPrOH)]2,H2O,539 +,AlPrxOy,[AlPr(OiPr)6\-(PriOH)]2,H2O,540 +,AlNdxOy,[AlNd(OiPr)6\-(PriOH)]2,H2O,540 +14,Silicon,,, +,Si,SiCl4,Si2H6,541 +,,SiCl2H2,H2,542 and 543 +,,SiCl2H2,H c,544–551 +,,SiCl2H2,– j,552–554 +,,SiEt2H2,– k,555 +,,SiH4,– k,556–558 +,,Si2Cl6,Si2H6,"547, 548, 559, and 560" +,,Si2Cl6,H c,561 +,,Si2H6,– k,562–570 +,,Si2H6,– j,571–575 +,,Si2H6,– k,570 and 576 +,,Si2H6,– l,577 +,,Si3H8,– k,546 and 578 +,SiO2,SiCl4,H2O,"74, 111, 130, and 579–587" +,,SiCl4,H2O + cat. g,"99, 584, and 588–594" +,,Si2Cl6,O3,595 +,,SiCl3H,H2O,596–598 +,,SiCl2H2,O3,599 and 600 +,,SiH4,N2O⚡,601 +,,Si(OMe)4,H2O,602 +,,Si(OMe)4,H2O + NH3 cat.,603 +,,Si(OEt)4,H2O + cat.,604 and 605 +,,Si(OEt)4,O2⚡,"433, 606, and 607" +,,Si(OEt)3((CH2)3\-NH2),H2O + O3,362 and 608–612 +,,Si(OtPe)3OH,AlMe3,613 and 614 +,,HMDS h,O2,615 +,,SiH2(N(CH3)2)2,O3,616 and 617 +,,SiH2(NHtBu)2,O2⚡,618 +,,SiH2(NEt2)2,O2⚡,619 +,,SiH2(NEt2)2,O3,389 +,,SiH(N(CH3)2)3,O3,"616, 617, and 620–622" +,,SiH(N(CH3)2)3,H2O,623 +,,SiH(N(CH3)2)3,H2O2,623 and 624 +,,Si(NCO)4,H2O,625 +,,Si(NCO)4,NEt3,626 +,,MeOSi(NCO)3,H2O2,627 and 628 +,Si3N4,SiCl4,NH3,629–633 +,,SiCl2H2,NH3,632 and 634 +,,SiCl2H2,NH3⚡,635 +,,SiCl2H2,NH3 + cat.,636 and 637 +,,Si2Cl6,N2H4,638 +,,Si2Cl6,NH3,639 +,SiC,SiCl2H2,C2H4,640 and 641 +,,SiEt2H2,– i,642 +,,Si2H6,C2H4,643 +,,Si2H6,C2H2,644–647 +,SixAlyOz,Si(OEt)4,AlCl3,535 +,SiO2/ Al2O3 f,(tBuO)3SiOH,AlMe3,"43, 536, and 537" +,SixTiyOz,Si(OEt)4,TiCl4,51 +,,Si(OnBu)4,Ti(NEt2)4,648 and 649 +,SixZryOz,SiCl4,Zr(OtBu)4,650 +,,Si(OEt)4,ZrCl4,103 +,,Si(OnBu)4,ZrCl4,103 and 651 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_009_table_004/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_009_table_004/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..3530dc15114ebb12735aee9f7823a76416c80b7f --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_009_table_004/gold.csv @@ -0,0 +1,51 @@ +Z,Material,Reactant A,Reactant B,References +,,Si(OnBu)4,Zr(NEt2)4,652 +,SixHfyOz,Si(OEt)4,HfCl4,653 +,,Si(OEt)4,HfI4,653 +,,(tBuO)3SiOH,Hf(NMe2)4,654 +,,Si(OnBu)4,Hf(NEt2)4,655–659 +,,Si(OtPe)3OH,Hf(NEt2)4,660 +,,Si(OnBu)4,Hf(NEtMe)4,661 +,SixBiyOz,Bi(CH2SiMe3)3,O3,662 and 663 +15,Phosphorus,,, +,POx,PCl3,H2O,664–668 +,,POCl3,H2O,"581, 669, and 670" +,PxByOz,POCl3,B(OMe)3,51 and 52 +20,Calcium,,, +,CaO (CaCO3),Ca(thd)2,H2O,671 +,,Ca(thd)2,O3,672 and 673 +,,Ca(iPr3Cp)2,H2O,674 +,CaS,Ca(thd)2,H2S,671 and 675–679 +,CaF2,Ca(thd)2,HF,680 +,,Ca(thd)2,TiF4,67 and 681 +21,Scandium,,, +,Sc2O3,ScCp3,H2O,682 +,,Sc(thd)3,O3,682 +,,Sc(thd)3,O3 + H2O2,682 +,,Sc(iPrAMD)3,H2O,683 +,,Sc(emd)3,O2,684 +22,Titanium,,, +,Ti,TiCl4,H2⚡,685 and 686 +,TiO2,TiF4,H2O,687 +,,TiCl4,H2O,"44, 92, 94, 123, 128, 153, 176, 179, 198, 207, 218, 228, 238, 305, 365, 378, 379, 390, 581, 585, 664, 665, and 688–814" +,,TiCl4,H2O2,"301, 334, 403, 405, 490, 815, and 816" +,,TiCl4,MeOH,817 +,,TiCl4,O2⚡,818 and 819 +,,TiI4,H2O,820–822 +,,TiI4,H2O2,823–825 +,,TiI4,O2,826 and 827 +,,Ti(CpMe5)(OMe)3,O3,828 and 829 +,,Ti(CpMe5)(OMe)3,O2⚡,375 +,,Ti(CpMe)(OiPr)3,O2⚡,375 +,,Ti(OMe)4,H2O,95 and 830–838 +,,Ti(OEt)4,H2O,"122, 128, 760, 773, 782, 837, and 839–845" +,,Ti(OEt)4,H2O2,"96, 760, 773, and 782" +,,Ti(OiPr)4,H2O,"128, 212, 236, 273, 280, 285, 325, 328, 350, 359, 362, 396, 764, 788, 791, and 846–881" +,,Ti(OiPr)4,H2O⚡,864 and 878 +,,Ti(OiPr)4,H2O2,"325, 334, 406, 407, 848, 882, and 883" +,,Ti(OiPr)4,O2,736 and 884 +,,Ti(OiPr)4,O2⚡,"375, 439, 442, 448, 607, 854, 864, 878, and 885–895" +,,Ti(OiPr)4,O2 + NH3,896 +,,Ti(OiPr)4,NH3,897 and 898 +,,Ti(OiPr)4,O3,"236, 890, and 899–906" +,,Ti(OiPr)4,N2O⚡,890 and 907 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_010_table_005/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_010_table_005/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..685da436589d7be6920498856bddf75549ba044f --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_010_table_005/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,References +,,Ti(OiPr)4,HCOOH,908 +,,Ti(OiPr)4,CH3COOH,908–911 +,,Ti(OiPr)2(dmae)2,H2O,912 +,,Ti(OiPr)2(thd)2,H2O,913–916 +,,Ti(trhd)2\-(O(CMe2Et)2,H2O,913 +,,Ti(OBu)4,H2O,917 +,,Ti(NMe2)4,H2O,"356, 377, 864, 914, and 918–924" +,,Ti(NMe2)4,O3,418 and 925 +,,Ti(NMe2)4,H2O⚡,864 +,,Ti(NMe2)4,O2⚡,864 and 926–930 +,,Ti(NMe2)4,q,931 +,,TiCp2((iPrN)2\-C(NHiPr)),q,932 +,TiN,TiCl4,NH3,766 and 933–956 +,,TiCl4,NH3 + cat.,"121, 934–936, and 957" +,,TiCl4,"N2,H2⚡","429, 449, 453, and 958–965" +,,TiCl4,Me2NNH2,966 +,,TiCl4,tBuNH2,967 +,,TiCl4,AyNH2,967 +,,TiI4,NH3,936 and 968 +,,TiI4,tBuNH2,967 +,,TiI4,AyNH2,967 +,,Ti(NMe2)4,NH3,319 and 969–987 +,,Ti(NMe2)4,NH3⚡,"986, 988, and 989" +,,Ti(NMe2)4,"NH3, H2⚡","493, 979, and 990" +,,Ti(NMe2)4,N2⚡,"986, 989, and 991–994" +,,Ti(NMe2)4,H2⚡,"989, 992, 993, and 995" +,,Ti(NMe2)4,q,931 +,,Ti(NEt2)4,NH3,977 +,,Ti(NEtMe)4,NH3,996 and 997 +,,Ti(NEtMe)4,q,998 +,,TiCp2((iPrN)2\-C(NHiPr)),q,932 +,TiS2,TiCl4,H2S,999 +,TixAlyOz,Ti(OEt)4,AlCl3,103 +,,Ti(OiPr)4,AlCl3,103 +,,Ti(OiPr)4,AlMe3,103 +,TixSiyOz,TiCl4,Si(OEt)4,51 +,,Ti(NEt2)4,Si(OnBu)4,648 and 649 +,TixZryOz,Ti(OiPr)4,ZrCl4,"103, 1000, and 1001" +,TixHfyOz,Ti(OiPr)4,HfCl4,103 +23,Vanadium,,, +,VOx,VOCl3,H2O,"581, 668, 698, 705, and 1002–1005" +,,VO(OiPr)3,H2O,1006–1010 +,,VO(OiPr)3,H2O⚡,1010 +,,VO(OiPr)3,H2O2,1011 +,,VO(OiPr)3,O2,1012–1014 +,,VO(OiPr)3,O2⚡,1010 +,,VO(OnPr)3,CH3COOH,"910, 1015, and 1016" +,,VO(acac)2,O2,1017–1019 +24,Chromium,,, +,CrOx,CrO2Cl2,H2O,"581, 668, 670, 698, 705, and 1020–1028" +,,CrO2Cl2,H2O2,1026 +,,CrO2Cl2,MeOH,"538, 817, and 1028–1031" +,,Cr(acac)3,O2,736 and 1032–1036 +,CrxAlyOz,CrO2Cl2,AlMe3,538 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_011_table_006/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_011_table_006/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..a0b9167e7bbf27cfc3527a2787109f2e95271cd6 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_011_table_006/gold.csv @@ -0,0 +1,57 @@ +Z,Material,Reactant A,Reactant B,References +25,Manganese,,, +,MnOx,Mn(CpEt)2,H2O,1037 +,,Mn(thd)3,O3,1038–1041 +,MnS,MnCl2,H2S,77 and 78 +,MnTe,Mn,Te,70 and 1042–1051 +,MnAs,Mn(CpMe)2,As(NMe2)3,1052 +26,Iron,,, +,Fe,Fe(tBuAMD)2,H2,1053 +,FeOx,FeCl3,H2O,1054 +,,Fe(acac)3,O2,1055 +,,Fe(acac)3,O3,1056 +,,Fe(thd)3,O3,1057–1061 +,,Fe(Cp)2,O2,"821, 1062, and 1063" +,,Fe(Cp)2,O3,"609, 1064, and 1065" +,,Fe(tBuAMD)2,H2O,1053 +,,Fe2(tBuO)6,H2O,1064–1066 +27,Cobalt,,, +,Co,Co(iPrAMD)2,H2,"1053, 1067, and 1068" +,,Co(iPrAMD)2,NH3,1068 and 1069 +,,Co(iPrAMD)2,NH3⚡,1069 +,,CoCp(iPrAMD),NH3⚡,1070 +,,CoCp2,NH3⚡,1071 and 1072 +,,CoCp(CO)2,NH3⚡,1073 and 1074 +,,CoCp(CO)2,H2⚡,1074 and 1075 +,,CoCp(CO)2,N2⚡,1074 and 1075 +,,Co2(CO)8,H2⚡,1075–1077 +,,Co2(CO)8,N2⚡,1075 +,CoOx,CoI2,O2,1078 +,,Co(acac)2,O2,1079–1081 +,,Co(acac)3,O2,1079–1087 +,,Co(thd)2,O3,1060 and 1088–1090 +,,Co(iPrAMD)2,H2O,1053 +,CoSi2,CoCp2,"NH3, SiH4⚡",1091 +28,Nickel,,, +,Ni,Ni(acac)2,H2,1092 +,,Ni(iPrAMD)2,H2,1053 +,,Ni(dmamb)2,H2⚡,1093 +,,Ni(dmamb)2,NH3⚡,1072 and 1093 +,,Ni(hfip)2,H2,1094 and 1095 +,NiO,NiCp2,H2O,1096 +,,NiCp2,O3,1097–1100 +,,Ni(CpEt)2,O3,1097 and 1100 +,,Ni(dmamb)2,H2O,1101 +,,Ni(dmamp)2,H2O,1102 and 1103 +,,Ni(acac)2,O2,1104–1106 +,,Ni(acac)2,O3,1092 and 1107 +,,Ni(thd)2,H2O,1108–1110 +,,Ni(thd)2,O3,1111 +,,Ni(apo)2,O3,1107 +,,Ni(dmg)2,O3,1107 +29,Copper,,, +,Cu,CuCl,H2,1112 and 1113 +,,CuCl,H2 + H2O,1113 and 1114 +,,CuCl,Zn,1115 +,,Cu(acac)2,H2,1092 +,,Cu(acac)2,H2⚡,1116–1118 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_012_table_007/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_012_table_007/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..be7ba6086f1627040b36dc906e020967b4fb02fb --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_012_table_007/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,References +,,Cu(thd)2,H2,1119–1122 +,,Cu(thd)2,H2⚡,1123 +,,Cu(hfac)2,ROH d,1124 +,,Cu(hfac)2,HCHO m,1124 +,,Cu(hfac)2,H2 + cat.,1125 +,,Cu(hfac)(vtmos),H2⚡,1126 +,,Cu(iPrAMD),H2,1053 and 1067 +,,Cu(sBuAMD),H2,1127–1131 +,,Cu(dmap)2,ZnEt2,1132 +,,Cu(dki)(vtms),SiH2Et2,1133 +,CuOx,Cu(acac)2,O2,1134 +,,Cu(thd)2,O2,1135–1137 +,,Cu(hfac)2,H2O,1138 +,,Cu(PnBu3)2(acac),"H2O, O2",1139 +,Cu3N,Cu(sBuAMD),NH3,1128 and 1140 +,,Cu(hfac)2,NH3 + H2O,1141 +,CuxS,Cu(thd)2,H2S,1142–1146 +,,Cu(sBuAMD)2,H2S,1147 +,CuxSe,Cu(O2CtBu)2,(Et3Si)2Se,1148 +,,CuCl,(Et3Si)2Se,1148 +30,Zinc,,, +,Zn,ZnEt2,H2O,1149 +,ZnO,Zn,O2,1150 +,,Zn,H2O,1151 +,,ZnCl2,H2O,1152 +,,ZnCl2,O2,1153–1155 +,,ZnMe2,H2O,1156–1162 +,,ZnMe2,O2⚡,1163 and 1164 +,,ZnMe(OiPr),H2O,1165 +,,ZnEt2,H2O,"60, 117, 145, 147, 204, 240, 264, 282, 291, 297, 300, 305, 306, 318, 323, 346, 350, 352, 368, 374, 812, 1011, 1149, 1157, 1159–1162, and 1166–1265" +,,ZnEt2,H2O⚡,1266 +,,ZnEt2,H2O ☼,1179 +,,ZnEt2,H2O + NH3,292 and 1267 +,,ZnEt2,H2O + NH3 + O2,457 +,,ZnEt2,H2O2,"1223, 1268, and 1269" +,,ZnEt2,O2,1186 +,,ZnEt2,O2⚡,1270–1275 +,,ZnEt2,O3,1193 +,,ZnEt2,N2O,1276–1278 +,,ZnEt2,N2O⚡,458 +,,Zn(OAc)2,H2O,1160 and 1279–1285 +,ZnS,Zn,S,76 and 1286–1288 +,,Zn,H2S,1289 +,,ZnCl2,H2S,"77, 78, 84, and 1290–1305" +,,ZnI2,H2S,1305 +,,ZnMe2,H2S,1156 and 1306–1314 +,,ZnEt2,H2S,"206, 1177, 1194, 1215, and 1315–1320" +,,ZnEt2,Et2S2,1321 +,,Zn(CH3COO)2,H2S,1304 +,,Zn(OAc)2,H2S,"680, 1279, 1292, 1293, 1295–1297, 1304, and 1322" +,ZnF,Zn(OAc)2,HF,680 +,ZnSe,Zn,Se,"1150, 1287, and 1323–1339" +,,Zn,H2Se,1340 +,,Zn,Et2Se,1341 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_013_table_008/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_013_table_008/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..9172d197cce808ba3acd859fc7f587d294924817 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_013_table_008/gold.csv @@ -0,0 +1,54 @@ +Z,Material,Reactant A,Reactant B,References +,,ZnCl2,H2Se,1342–1344 +,,ZnCl2,(Et3Si)2Se,1148 +,,ZnMe2,H2Se,1312–1314 and 1345–1355 +,,ZnEt2,H2Se,1356 +,,ZnEt2,Et2Se2,1321 +,,Zn[N(SiMe3)2]2,H2Se,1356 +,ZnTe,Zn,Te,"1044, 1323, 1326–1328, 1330, and 1357–1366" +,,ZnCl2,(Et3Si)2Te,1148 +,,ZnMe2,Et2Te,1367 +,,ZnMe2,MeAyTe,1367 +31,Gallium,,, +,Ga2O3,Ga(acac)3,O3,1368 and 1369 +,,Ga(acac)3,H2O,1368 +,,[GaMe2NH2]3,O2⚡,1370–1372 +,,Ga2(NMe2)6,H2O,1373 +,GaN,Ga,N2,1374 and 1375 +,,GaCl,NH3,1376 and 1377 +,,GaCl3,NH3,1378 and 1379 +,,GaMe3,NH3,485 and 1380–1384 +,,GaEt3,NH3,"496, 1385, and 1386" +,,GaEt3,NH3 o,1387 +,GaP,Ga,P,1286 +,,GaCl,PH3,1388 +,,GaMe3,PH3,"502, 516, and 1389–1394" +,,GaMe3,P(NMe2)3,1395 +,,GaEt3,PH3 ☼,1396 +,GaAs,GaCl,AsH3,"1388, 1394, and 1397–1410" +,,GaCl3,AsH3,"506, 507, and 1411–1415" +,,GaCl3,As,1414 +,,GaBr,AsH3,1416 +,,GaI,AsH3,1416 +,,GaMe3,AsH3,"508–511, 514, 516, 518, 521, 524, 1390, 1393, and 1417–1467" +,,GaMe3,EtAsH2,1468 +,,GaMe3,tBuAsH2,1469–1476 +,,GaEt3,AsH3,"512, 514, 1390, 1424, 1433, 1438, and 1477–1485" +,,GaEt3,tBuAsH2,1475 and 1486 +,,GaEt3,(Me2N)3As,"527, 1487, and 1488" +,,GaEt2Cl,As,1489 +,,GaEt2Cl,AsH3,1450 and 1490 +,,GaEt2Me,AsH3,1390 +,,GaiBu3,AsH3,1480 +,,GaNp3,tBuAsH2,1475 and 1491 +,GaSb,GaCl3,(Et3Si)3Sb,534 +32,Germanium,,, +,Ge,GeCl4,H c,1492 and 1493 +,,GeMe2H2,H c,1494–1496 +,,GeEt2H2,– k,1497 and 1498 +,,GeH4,– k,558 and 1499 +,,Ge2H6,– k,1500 and 1501 +,GeO2,GeCl4,H2O,689 and 1502 +,,Ge(dpp-BIAN),O3,1503 +,GeSb,GeCl2 · (C4H8O2),(Et3Si)3Sb,534 +,GeTe,GeCl2 · (C4H8O2),(Et3Si)2Te,1148 and 1504 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_014_table_009/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_014_table_009/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..bc3778cac93304bf507f4f84bdd1d8c6ef3187ee --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_014_table_009/gold.csv @@ -0,0 +1,57 @@ +Z,Material,Reactant A,Reactant B,References +38,Strontium,,, +,SrO (SrCO3),Sr(CpiPr3)2,H2O,1505 and 1506 +,,Sr(CpnPrMe3)2,H2O,1507 +,,Sr(CpnPrMe3)2,O2,1507 +,,Sr(CptBu3)2,H2O,838 +,,Sr(thd)2,O3,1508 +,,Sr(methd)2,O2⚡,885 +,SrS,Sr(CpMe5)2,H2S,1509 +,,Sr(CpiPr3)2,H2S,1509 and 1510 +,,Sr(thd)2,H2S,"675, 677, and 1511–1513" +,SrF2,Sr(thd)2,HF,680 +,SrTa2O6,Sr[Ta(OEt)5\-(me)]2,O2⚡,1514 +39,Yttrium,,, +,Y2O3,YCp3,H2O,1515 and 1516 +,,Y(CpMe)3,H2O,1515 and 1517–1520 +,,Y(CpMe)3,O3,1521 +,,Y(CpEt)3,H2O,1522 and 1523 +,,Y(thd)3,O2,1524 +,,Y(thd)3,O3,"135, 153, and 1524–1526" +,,Y(thd)3,O2⚡,1527–1532 +,,Y(iPrAMD)3,H2O,1533 +,YF3,Y(thd)3,TiF4,1534 +,Y2O2S,Y(thd)3,H2S,1535 +40,Zirconium,,, +,ZrO2,ZrCl4,H2O,"98, 128, 135, 138, 146, 162, 221, 736, 1516, and 1536–1563" +,,ZrCl4,H2O2,1544 and 1545 +,,ZrCl4,O2,1564 and 1565 +,,ZrI4,H2O,1566 +,,ZrI4,H2O2,1567–1570 +,,ZrCp2Cl2,O3,1571–1573 +,,ZrCp2Me2,H2O,1574 and 1575 +,,ZrCp2Me2,O3,1571 and 1576 +,,ZrCp2Me(OMe),O3,1577 +,,ZrCp(NMe2)3,O3,1578 +,,Zr (CpMe)2Me2,O3,1579–1581 +,,Zr(CpMe)2Me(OMe),H2O,1582 +,,Zr(CpMe)2Me(OMe),O3,1579–1584 +,,Zr(CpMe)(NMe2)3,O3,1578 +,,Zr(CpEt)(NMe2)3,O3,1578 +,,Zr(Cp2CMe2)Me2,O3,1585 +,,Zr(Cp2CMe2)\-Me(OMe),O3,1585 +,,Zr(OiPr)4,H2O,1586 +,,Zr(OiPr)2(dmae)2,H2O,861 and 1587 +,,Zr(OtBu)4,H2O,"273, 850, 852, 853, 879, and 1588–1594" +,,Zr(OtBu)4,O2,1592 +,,Zr(OtBu)4,O2⚡,1595–1598 +,,Zr(OtBu)4,N2O,1592 +,,Zr(OtBu)4,Ar⚡,1598 +,,Zr(OtBu)2(dmae)2,H2O,1587 and 1599 +,,Zr(OtBu)2(dmae)2,H2⚡,1600 +,,Zr(dmae)4,H2O,1587 +,,Zr(thd)4,O3⚡,1571 +,,Zr(NMe2)4,H2O,"350, 1517–1519, and 1601–1605" +,,Zr(NEt2)4,H2O,"295, 311, 315, 320, 1601, and 1606" +,,Zr(NEt2)4,O2,1607 +,,Zr(NEt2)4,O2⚡,1596 and 1608 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_015_table_010/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_015_table_010/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..dae5becf16ec6b0ad22c8064827e012d4d3cce21 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_015_table_010/gold.csv @@ -0,0 +1,56 @@ +Z,Material,Reactant A,Reactant B,References +,,Zr(NEtMe)4,H2O,1601 and 1609 +,,Zr(NEtMe)4,O3,1610–1615 +,,Zr(NEtMe)4,O2⚡,1616–1619 +,,Zr(NEtMe)4,N2O⚡,1618 +,,Zr(NEtMe)4,q,998 +,,Zr[N(SiMe3)2]2Cl2,H2O,1620 +,,Zr(MeAMD)4,H2O,1609 +,ZrNx,ZrCp2(NMe2)2,N2⚡,1621 +,,Zr(NMe2)4,NH3,1622 +,,Zr(NEtMe)4,NH3,1622 +,,Zr(NEt2)4,NH3,1622 +,,Zr(NEt2)4,N2⚡,1623 +,ZrxAlyOz,ZrCl4,Al(OEt)3,103 +,ZrxSiyOz,ZrCl4,Si(OEt)4,103 and 1624 +,,ZrCl4,Si(OnBu)4,103 and 651 +,,Zr(OtBu)4,SiCl4,650 +,,Zr(NEt2)4,Si(OnBu)4,652 +,ZrxTiyOz,ZrCl4,Ti(OiPr)4,"103, 1000, and 1001" +,ZrxLayOz,Zr(CpMe)2\-Me(OMe),La(iPrCp)3,1625 +41,Niobium,,, +,Nb2O5,Nb(OEt)5,H2O,"91, 122, 391, 842, 1539, and 1626–1629" +,NbN,NbCl5,NH3,"933, 935, and 1630–1632" +,,NbCl5,NH3 + cat.,935 and 1630 +,,NbCl5,Me2NNH2,966 +,,Nb(NtBu)(NEtMe)3,H2⚡,1633 +42,Molybdenum,,, +,Mo,MoCl5,Zn,1634 +,MoxN,MoCl5,NH3,933 and 1635 +,,MoCl5,Me2NNH2,966 +,,Mo(NtBu)2(NMe2)2,NH3,1636–1640 +,,Mo(NtBu)2(NEt2)2,NH3,1638 and 1640 +44,Ruthenium,,, +,Ru,Ru(chd)(ipmp),O2,1641 +"""",,RuCp2,O2,"95, 98, and 1642–1651" +,,RuCp2,NH3⚡,1649 +,,Ru(CpEt)2,O2,1649 and 1652–1659 +,,Ru(CpEt)2,NH3⚡,"196, 1649, 1656, and 1660–1670" +,,Ru(CpEt)2,N2 + H2⚡,994 and 1671 +,,Ru(CpEt)2,H2⚡ + O2,900 +,,Ru(CpEt)(dmp),O2,906 and 1672–1677 +,,Ru(CpEt)(dmp),q,1678 +,,Ru(CpEt)(pyr),NH3⚡,1679 +,,RuCp(CpCH(Me)\-(NMe2)),O2,1680 +,,RuCp(CO)2Et,O2,1681 and 1682 +,,RuCp(CO)2Et,O2⚡,1681 +,,Ru(od)3,O2,1683 +,,Ru(thd)3,H2,1684 +,,Ru(thd)3,O2,1644 and 1685–1687 +,,Ru(tBuAMD)2\-(CO)2,O2,1688 +,,Ru(tBuAMD)2\-(CO)2,NH3,1689 and 1690 +,,RuO4,H2,1691 +,RuO2,Ru(CpEt)2,O2,"1652, 1654, 1687, and 1692" +,,Ru(thd)2(cod),O2,1693 +45,Rhodium,,, +,Rh,Rh(acac)3,O2,1653 and 1694 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_016_table_011/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_016_table_011/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..482d3ae3d72284da15aa9101ed249881f224923a --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_016_table_011/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,References +,Rh2O3,Rh(acac)3,O3,1695 +46,Palladium,,, +,Pd,Pd(thd)2,H2,1684 +,,Pd(thd)2,O2,1136 +,,Pd(hfac)2,H2,1696–1698 +,,Pd(hfac)2,H2⚡,1699 and 1700 +,,Pd(hfac)2,H2 + N2⚡,1701 +,,Pd(hfac)2,HCOCOOH,1696 +,,Pd(hfac)2,HCHOm,"368, 396, 1011, and 1702–1704" +47,Silver,,, +,Ag,Ag(O2CtBu)(PEt3),H2⚡,1705 +,,Ag(hfac)(cod),propanol,1706 +48,Cadmium,,, +,CdS,Cd,S,1707 and 1708 +,,CdCl2,H2S,1300 +,,CdMe2,H2S,1315 and 1709–1714 +,CdSe,Cd,Se,"1287, 1708, and 1715–1722" +,,CdMe2,H2Se,1315 and 1346 +,CdTe,Cd,Te,"70, 1042–1047, 1049–1051, 1338, 1360, 1364, 1366, 1708, 1720, 1721, and 1723–1747" +,,CdMe2,Et2Te,1367 +,,CdMe2,MeAyTe,1367 and 1748–1750 +,,CdMe2,iPr2Te,1751 and 1752 +49,Indium,,, +,In2O3,InCl3,H2O,128 and 1753–1757 +,,InCl3,H2O2,1757 +,,InMe3,H2O,1758 +,,InCp,O3,"787, 1759, and 1760" +,,In(acac)3,H2O,1761 +,,In(acac)3,O3,1761 +,InN,In,N2,1762 +,,InEtMe2,NH3,"485, 1381, and 1382" +,In2S3,InCl3,H2S,1763 and 1764 +,,In(acac)3,H2S,"1177, 1178, and 1765–1772" +,InP,InCl,PH3,1388 +,,InCl,tBuPH2,1406 +,,InMe3,PH3,"1436, 1449, and 1773–1781" +,,InMe3,tBuPH2,1782–1784 +,,InEt3,PH3,1389 and 1391 +,,InEt3,tBuPH2,1785 +,In2Se3,InCl3,(Et3Si)2Se,1148 +,InAs,InCl,AsH3,"1398, 1399, and 1411" +,,InMe3,AsH3,"1394, 1428, 1786, and 1787" +,,InMe3,tBuAsH2,"1476, 1775, 1777, 1788, and 1789" +,,InClMe2,AsH3,1790 +,,InEt3,AsH3,"1421, 1791, and 1792" +,InSb,In,Sb,1793 and 1794 +50,Tin,,, +,SnO2,Sn,O2,1286 +,,SnCl4,H2O,"128, 714, 747, 1369, and 1795–1812" +,,SnCl4,H2O2,1804 and 1813–1818 +,,SnI4,H2O2,1804 +,,SnI4,O2,"1804, 1813, 1814, and 1819–1821" +,,SnMe4,N2O4,459 and 883 +,,SnEt4,N2O4,459 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_017_table_012/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_017_table_012/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..3c435b33438f3b2f74009d5281cbccd418762da3 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_017_table_012/gold.csv @@ -0,0 +1,53 @@ +Z,Material,Reactant A,Reactant B,References +,,SnnBu2(CH3COO)2,O2⚡,1822–1825 +,,Sn(NMe2)4,H2O2,"1760, 1826, and 1827" +,,Sn(tbba),H2O2,1828 +,SnS,Sn(acac)2,H2S,384 +51,Antimony,,, +,Sb,SbCl5,(Et3Si)3Sb,534 +,Sb2O5,SbCl5,H2O,1797 +,,Sb(NMe2)3,O3,1829 +,Sb2S3,Sb(NMe2)3,H2S,1226 and 1829 +,Sb2Te3,SbCl3,(Et3Si)2Te,"534, 1148, and 1504" +56,Barium,,, +,BaO (Ba(OH)2),Ba(CptBu3)2,H2O,1830 +,BaO,Ba(CpnPrMe4)2,H2O,1519 +,BaS,Ba(CpMe5)2,H2S,1509 and 1510 +,,Ba(thd)2,H2S,675 and 1831 +,BaB2O4,Ba(Tp^Et2)2,H2O,1832 +57,Lanthanum,,, +,La2O3,La(thd)3,O2,1135 and 1137 +,,La(thd)3,O3,"44, 1088, 1111, 1577, and 1833–1835" +,,La(thd)3,H2O,"237, 1836, and 1837" +,,La[N(SiMe3)2]3,H2O,654 and 1838–1842 +,,La(iPrAMD)3,H2O,1053 and 1843 +,,La(iPrfAMD)3,H2O,1844 +,,La(iPrfAMD)3,O2,1607 +,,La(iPrfAMD)3,O3,1844 +,,La(Cp)3,H2O,"1835, 1845, and 1846" +,,La(CpEt)3,O2⚡,1847 +,,La(CpEt)3,O3⚡,1848 +,,La(CpiPr)3,H2O,1849 and 1850 +,,La(CpiPr)3,O3,1851 and 1852 +,,La(CpiPr)3,O2⚡,1850 and 1853–1856 +,La2S3,La(thd)3,H2S,1857 +,LaF3,La(thd)3,TiF4,67 and 1858 +,LaxSiyOx,La[N(SiMe3)2]3,(tBuO)3Si,654 +,LaAlO3,[LaAl(OiPr)6\-(iPrOH)]2,H2O,539 +,LaxZryOz,La(CpiPr)3,Zr(CpMe)2\-Me(OMe),1625 +58,Cerium,,, +,CeO2,Ce(thd)4,O2,1135 and 1137 +,,Ce(thd)4,O3,1859 and 1860 +,,Ce(thd)3phen,O3,1859 +59,Praseodymium,,, +,PrOx,Pr[N(SiMe3)2]3,H2O,1861 and 1862 +,,Pr(iPrAMD)3,H2O,1863 +,,Pr(CpiPr)3,H2O,1863 +,PrAlxOy,[PrAl(OiPr)6\-(PriOH)]2,H2O,540 +60,Neodymium,,, +,Nd2O3,Nd(thd)3,O3,1864 and 1865 +,NdAlxOy,[NdAl(OiPr)6\-(PriOH)]2,H2O,540 +62,Samarium,,, +,Sm2O3,Sm(thd)3,O3,1864 +63,Europium,,, +,Eu2O3,Eu(thd)3,O3,1864 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_018_table_013/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_018_table_013/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..7782c0ee236b3c184053712236b2fdd55aa95044 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_018_table_013/gold.csv @@ -0,0 +1,49 @@ +Z,Material,Reactant A,Reactant B,References +64,Gadolinium,,, +,Gd2O3,Gd(thd)3,O3,"1583, 1864, and 1866" +,,Gd(CpMe)3,H2O,1866 +,,Gd(mmp)3-tetraglyme,H2O,1867 +,,Gd(dmb)3,H2O,96 and 1868–1870 +,,Gd((iPrN)2\-CNMe2)3,H2O,1871–1873 +66,Dysprosium,,, +,Dy2O3,Dy(thd)3,O3,1864 +,,Dy(emd)3,O2,684 +67,Holmium,,, +,Ho2O3,Ho(thd)3,O3,1864 +68,Erbium,,, +,Er2O3,Er(thd)3,O3,"1584, 1864, and 1874" +,,Er(thd)3,O2⚡,"1527, 1528, and 1530–1532" +,,Er(CpMe)3,H2O,1875 +,,Er(tBuAMD)3,O3,1876 +69,Thulium,,, +,Tm2O3,Tm(thd)3,O3,1864 +70,Ytterbium,,, +,Yb2O3,Yb(thd)3,O3,1877 +71,Lutetium,,, +,Lu2O3,Lu(OiPr)3,H2O,1878 +,,Lu[Cp(SiMe3)]2Cl,H2O,1879 and 1880 +,LuSixOy,Lu[N(SiMe3)2]3,H2O,1881 and 1882 +,,Lu[N(SiMe3)2]3,O3,1881 and 1882 +72,Hafnium,,, +,HfO2,HfCl4,H2O,"92, 135, 154, 160, 168, 169, 171–173, 175, 188–190, 199, 221, 259, 310, 587, 741, 761, 1520, 1541, 1551, 1554–1562, 1566, 1610, 1839, and 1883–1974" +,,HfCl4,O2,1975 and 1976 +,,HfCl4,O3,"420, 423, 1897, 1917, 1933, 1951, 1954, 1977, and 1978" +,,HfCl4,Hf(mmp)4,1979 +,,HfCl2[N(SiMe3)2]2,H2O,1980 +,,HfI4,H2O,"1566, 1896, 1901, 1981, and 1982" +,,HfI4,H2O2,1981 +,,HfI4,O2,1901 and 1983–1987 +,,HfI4,O2 q,1988 +,,HfCp2Me2,H2O,1989 and 1990 +,,HfCp2Me2,O3,1990 +,,HfCp2Cl2,H2O,1990 +,,HfCp2Cl2,O3,1990 +,,Hf(CpMe)2Me2,H2O,1579 +,,Hf(CpMe)2Me2,O3,1991 +,,Hf(CpMe)2\-(OMe)Me,H2O,1579 +,,Hf(CpMe)2\-(OMe)Me,O3,"1521, 1581, 1860, 1991, and 1992" +,,Hf(CpMe)2\-(OiPr)Me,H2O,1993 +,,Hf(CpMe)2\-(mmp)Me,H2O,1993 +,,Hf(Cp)(NMe2)3,O3,1994 +,,Hf(CpMe)(NMe2)3,O3,1994 +,,Hf(Cp2CMe2)Me2,O3,1585 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_019_table_014/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_019_table_014/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..ccbdf96db74921f638653cf2435e3095cc847c04 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_019_table_014/gold.csv @@ -0,0 +1,53 @@ +Z,Material,Reactant A,Reactant B,References +,,Hf(Cp2CMe2)\-Me(OMe),O3,1585 +,,Hf(OiPr)4,O2,1995 +,,Hf(OtBu)4,H2O,274 and 1996 +,,Hf(OtBu)4,O3,1997–1999 +,,Hf(OtBu)4,O2,2000 +,,Hf(OtBu)4,O2⚡,1597 +,,Hf(OtBu)4,HCOOH,908 +,,Hf(OtBu)4,CH3COOH,908–911 +,,Hf(OtBu)2(mmp)2,H2O,2001 +,,Hf(OtBu)2(mmp)2,O2,684 +,,Hf(OtBu)(NEtMe)3,O3,2002 and 2003 +,,Hf(mmp)4,H2O,1867 and 2004 +,,Hf(mp)4,H2O,2005 +,,Hf(mp)4,O2⚡,2006 +,,Hf(ONEt2)4,H2O,2007 +,,Hf(NMe2)4,H2O,"254, 312, 350, 358, 362, 654, 1601, 1602, 1605, 1660, 1960, and 2008–2033" +,,Hf(NMe2)4,O3,2009 and 2034–2039 +,,Hf(NMe2)4,O2,2040 +,,Hf(NMe2)4,O2⚡,1667 and 2041–2044 +,,Hf(NEt2)4,H2O,"197, 468, 633, 1523, 1601, 1932, 1962, and 2045–2057" +,,Hf(NEt2)4,O2,1522 and 2058 +,,Hf(NEt2)4,O2⚡,"440, 2006, and 2058–2069" +,,Hf(NEt2)4,O3,472–475 +,,Hf(NEt2)4,N2O,2070 +,,Hf(NEt2)4,N2O⚡,2062 and 2070 +,,Hf(NEtMe)4,H2O,"160, 247, 250, 253, 1601, 1842, 1849, 1912, 1967, 2023, and 2071–2095" +,,Hf(NEtMe)4,O3,"428, 616, 620, 829, 1521, 1610, 1611, 1938, 1994, 1998, and 2095–2108" +,,Hf(NEtMe)4,O2⚡,"438, 963, 1610, 1618, 1619, 1853, and 2109–2111" +,,Hf(NEtMe)4,N2O⚡,1618 +,,Hf(NEtMe)4,q,998 +,,Hf[N(SiMe3)2]2Cl2,H2O,2112 +,,Hf(NO3)4,H2O,2113–2116 +,Hf3N4,Hf(NMe2)4,NH3,1622 +,,Hf(NEt2)4,NH3,1622 +,,Hf(NEtMe)4,NH3,501 and 1622 +,HfN,Hf(NMe2)4,H2⚡,"2042, 2117, and 2118" +,,Hf(NMe2)4,N2⚡,2119 +,HfxAlyOz,HfCl4,Al(OEt)3,103 +,HfxSiyOz,HfCl4,Si(OEt)4,653 and 2120 +,,HfCl4,Si(OnBu)4,2121 and 2122 +,,HfI4,Si(OEt)4,653 +,,Hf(OtBu)4,Si(NEtMe)4,2123 +,,Hf(NMe2)4,(tBuO)3SiOH,654 +,,Hf(NEtMe)4,Si(OnBu)4,661 +,,Hf(NEt2)4,Si(OnBu)4,655–659 +,,Hf(NEt2)4,Si(OtPe)3OH,660 +,,Hf(NO3)4,(tBuO)3SiOH,2116 +,HfxTiyOz,HfCl4,Ti(OiPr)4,103 +73,Tantalum,,, +,Ta,TaCl5,H2⚡,685 and 2124 +,,TaF5,H2⚡,2125–2127 +,,TaF5,Si2H6 p,2128 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_020_table_015/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_020_table_015/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..579a67a100bd0f123db6457668f85c4826fe87e7 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_020_table_015/gold.csv @@ -0,0 +1,56 @@ +Z,Material,Reactant A,Reactant B,References +,Ta2O5,TaCl5,H2O,"75, 77, 78, 81, 90, 92, 128, 392, 1291, 1541, 1627, 1883, and 2129–2134" +,,TaCl5,Ta(OEt)5,103 and 2135 +,,TaF5,H2O,2136 +,,TaI5,H2O2,2137 +,,TaI5,O2,2138 +,,Ta(OEt)5,H2O,"85, 91, 122, 123, 128, 201, 803, 833, 842, 1539, 1563, 1627, 1885, and 2139–2146" +,,Ta(OEt)5,O2⚡,"2143, 2147, and 2148" +,,Ta(OEt)5,O2 ☼,2149 +,,Ta(OEt)4(dmae),O3,2150 +,,Ta(NMe2)5,H2O,"843, 918, and 2151–2154" +,,Ta(NMe2)5,O2⚡,"375, 453, 918, 1650, 2152, and 2155" +,,Ta(NEt2)5,H2O,2156 +,,Ta(NEt)(NEt2)3,H2O,2156 +,,Ta(NtBu)(tBu2pz)3,O3,2157 +,,Ta(NtBu)\-(iPrAMD)2(NMe2),H2O,2158 +,TaOxNy,Ta(NiPr)(NEtMe)2,H2+N2 + NH3⚡,2159 +,TaNx,TaCl5,NH3,933 and 2160–2162 +,,TaCl5,NH3 + cat.,2160 +,,TaCl5,Me2NNH2,966 +,,TaCl5,tBuNH2,2163 +,,TaCl5,AyNH2,2163 +,,TaCl5,N2⚡,2164–2166 +,,TaCl5,H2+N2⚡,2167 and 2168 +,,TaCl5 · SEt2,NH3 + AlMe3,2169 +,,TaBr5,tBuNH2,2163 +,,TaF5,H2+N2⚡,2170 +,,TaF5,H2⚡+NH3,2126 and 2127 +,,TaF5,H2⚡+NH3⚡,2127 +,,Ta(NMe2)5,NH3,2152 and 2171–2180 +,,Ta(NMe2)5,NH3⚡,2181 +,,Ta(NMe2)5,H2⚡,"964, 2152, 2182, and 2183" +,,Ta(NMe2)5,N2⚡,2181–2183 +,,Ta(NMe2)5,"N2, H2⚡",453 +,,Ta(NEtMe)5,NH3,2184 +,,Ta(NiPr)(NEtMe)3,H2+N2⚡,2185 +,,Ta(NtBu)(NEt2)3,NH3,2186–2190 +,,Ta(NtBu)(NEt2)3,N2H4,2188 +,,Ta(NtBu)(NEt2)3,H2⚡,1669 and 2191–2193 +,,Ta(NtBu)(NEt2)3,NH3⚡,1668 and 2186 +,,TaCp(NtBu)(NEt2)2,NH3,2190 +,,Ta(NtAm)(NMe2)3,H2⚡,1671 +,TaNxCy,Ta(NtBu)(NEt2)3,H2,2194 +,,Ta(NtBu)(NEt2)3,H2⚡,2194–2196 +,,Ta(NtBu)(NEt2)3,H2-CH4⚡,2197 +,,Ta(NtBu)(NEt2)3,NH3,2198 +,,Ta(NtBu)(NEt2)3,NH3⚡,2198 +,,Ta(NtAm)[(NMe2)]3,H2⚡,2199 +,TaSix,TaF5,Si2H6,2200 +,Ta2SrO6,Sr[Ta(OEt)5\-(Me)]2,O2⚡,1514 +74,Tungsten,,, +,W,WF6,SiH4,2201–2206 +,,WF6,Si2H6,"165, 184, 187, 193, 220, 249, 309, 314, 1183, and 2207–2219" +,,WF6,B2H6,"2202, 2205, and 2206" +,WOx,WF6,H2O,2220 +,,WF6,q,2221 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_021_table_016/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_021_table_016/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..8447efc2b3850c02b78575d5ee4b7388f3cde87c --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_021_table_016/gold.csv @@ -0,0 +1,51 @@ +Z,Material,Reactant A,Reactant B,References +,,WFxOy,H2O,2220 +,,WOCl4,– q,2222 +,,W2(NMe2)6,H2O,2223 +,WxN,WF6,NH3,"944, 945, 2207, and 2224–2226" +,,WF6,NH3⚡,2226–2229 +,,WF6,NH3 + B2H6,2230 +,,W(NtBu)2(NMe2)2,NH3,"1067, 1636, 1639, 1689, and 2231–2234" +,,W2(NMe2)6,NH3,2235 +,WxC,W(NtBu)2(NMe2)2,"H2, N2⚡",2236 +,WNxCy,WF6,NH3 + Et3B,"945, 1939, 2173, and 2384–2389" +,,W(CpEt)(CO)2(NO),H2⚡,2237 +,WS2,WF6,H2S,2238 and 2239 +77,Iridium,,, +,Ir,Ir(acac)3,O2,"95, 98, 276, 832, 835, and 2240–2245" +,,Ir(acac)3,O3 + H2,2246 +,,Ir(acac)3,q,2247 +,,Ir(CpEt)(cod),O2,2248 +,,Ir(CpEt)(cod),NH3⚡,2249 +,,Ir(CpMe)(chd),O2,2250 +,IrO2,Ir(CpEt)(chd),O2 + H2⚡,2251 +,,Ir(CpEt)(cod),O2,2248 and 2249 +,,Ir(acac)3,O3,2252 +78,Platinum,,, +,Pt,Pt(CpMe)Me3,O2,"95, 98, 295, 350, 803, 1642, 1644, 1651, 1676, 2013, 2015, 2243, 2245, and 2253–2271" +,,Pt(CpMe)Me3,O2⚡,2260 +,,Pt(CpMe)Me3,H2,2266 and 2272 +,,Pt(acac)2,H2,1092 +,,Pt(acac)2,O3,2273 +,PtOx,Pt(CpMe)Me3,O2⚡,2260 +,,Pt(acac)2,O3,2273 +80,Mercury,,, +,HgTe,HgMe2,MeAyTe,1748 and 1750 +82,Lead,,, +,PbO2,Pb(thd)2,H2O,915 and 2274 +,,Pb(thd)2,O3,2275 +,,Pb(tod)2,H2O,913 +,,PbPh4,O3,2275 +,,Pb(dmamp)4,H2O,2276 +,PbS,PbBr2,H2S,2277 +,,PbI2,H2S,2277 +,,Pb(OAc)2,H2S,2277 +,,Pb(OtBu)2,H2S,2278 +,,Pb4O(OtBu)6,H2S,2278 +,,Pb(thd)2,H2S,2277–2281 +,,Pb(dedtc)2,H2S,2277 and 2278 +83,Bismuth,,, +,BiOx,Bi[N(SiMe3)2]3,H2O,2282 +,,Bi(thd)3,H2O,2283 +,,Bi(OtBu)3,H2O,2283 +,,Bi(dmb)3,H2O,2283 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_022_table_017/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_022_table_017/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..164337e39b905945c8ca0d24258ee1e2ebdf9495 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_022_table_017/gold.csv @@ -0,0 +1,4 @@ +Z,Material,Reactant A,Reactant B,References +,Bi2Se3,BiCl3,(Et3Si)2Se,1148 +,Bi2Te3,BiCl3,(Et3Si)2Te,1148 +,BixSiyOz,Bi(CH2SiMe3)3,O3,662 and 663 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_026_table_018/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_026_table_018/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..723af61de8ba92c7551cbffec0ffe62460db1c4f --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_026_table_018/gold.csv @@ -0,0 +1,32 @@ +Compound,Precursors,Ref. +MgAl2O4,Mg(C5H5)2 + Al(CH3)3 + O3,59 +LaAlO3,La(thd)3 + Al(acac)3 + O3,2284 +,La(iPr)AMD)3 + Al(CH3)3 + H2O,2285 +NdAlO3,Nd(thd)3 + Al(CH3)3 + O3,1865 +"MSiO4 (M = Zr, Hf)",MCl4 + Si(OEt)4,103 +,MCl4 + Si(OEt)4 + H2O,103 +,MCl4 + Si(OnBu)4,103 +,MCl4 + H2O + NH2(CH2)3Si(OEt)3 + O3,2286 +Bi4Si3O12 (Bi2SiO5),Bi(CH2SiMe3)3 + O3,662 +Ca10(PO4)6(OH)2,Ca(thd)2 + O3 + (CH3O)3PO + H2O,673 +RScO3,R(thd)3 + Sc(thd)3 + O3,2287 +(R = lantanide),R(MeC5H4)3 + Sc(C5H5)3 + H2O,2288 +"MTiO3 (M=Sr,Ba)",M(iPr)3C5H2)2 + Ti(OiPr)4 + H2O,2289 +,M(tBu)3C5H2)2 + Ti(OMe)4 + H2O,1505 +,M(thd)2 + O3 + Ti(OiPr)4 + H2O,1508 +,M(thd)2 + Ti(OiPr)2(thd)2 + H2O,2290 +Bi4Ti3O12,Bi(CH2SiMe3)3 + Ti(OMe)4 + H2O,2291 +,Bi(Ph)3 + O3 + Ti(OiPr)4 + H2O,663 +PbTiO3,Pb(Ph)4 + O3 + Ti(OiPr)4 + H2O,2292 +,Pb(dmamp)2 + H2O + Ti(OtBu)4 H2O,2293 +LaMnO3,La(thd)3 + Mn(thd)3 + O3,1038 +LaCoO3,La(thd)3 + Co(thd)2 + O3,1088 +LaNiO3,La(thd)3 + Ni(thd)2 + O3,1111 +LaGaO3,La(thd)3 + Ga(thd)3 + O3,2294 +PbZrO3,PH4Pb + Zr(thd)4 + O3,2295 +LiLaOx,Li(thd) + La(thd)3 + O3,45 +LaLuO3,La(thd)3 + Lu(thd)3 + O3,2296 +SrTa2O6,SrTa2(OEt)10(dmae)2 + H2O,2297 +SrBi2Ta2O9,SrTa2(OEt)10(dmae)2 + H2O + Bi(N(SiMe3)2)3 + H2O,2282 +Ge2Sb2Te5,GeCl2·L + SbCl3 + (R3Si)2Te,1148 +CuGaS2,CuCp·PEt3 + Et3Ga + H2S,2298 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_028_table_019/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_028_table_019/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..1bcc6651a5036ccb1420bf8cc0771c2015f62b3b --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_028_table_019/gold.csv @@ -0,0 +1,24 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +Li2O (LiOH),,,,Amorphous,,,,,, +,Li(OtBu),H2O,"Si, SLG",225,,,,,,44 +B2O3,,,,Amorphous,Hexagonal,,,,, +,BBr3,H2O,"Si, SLG",20–50,,,,,,47 +MgO,,,,Amorphous,Cubic,,,,, +,Mg(thd)2,O3,"Si, SLG",,225–250,,,,,65 +,Mg(thd)2,H2O2,SLG,,325–425,,,,,64 +,Mg(Cp)2,H2O,"H-Si, Si, SLG",,105–375,,,,,"58, 60, and 61" +,Mg(Cp)2,H2O,Si,370–500,500–900,,,,,55–57 +,Mg(CpEt)2,H2O,Si,,150,,,,,63 +Al2O3,,,,Amorphous,Hexagonal,Cubic,Tetragonal,,, +,AlCl3,H2O,"Si, SiO2, glass, ITO, Al, PC",100–500,,600–800,600–800,,,"79, 83, 86, 88, 93, and 2303" +,AlCl3,O2,Sapphiree,,660,,,,,101 +,AlCl3,O2,Nbe,,450,,,,,101 +,AlCl3,tBuOH,"Si, SLG, ITO, Al",500,,,,,,88 +,AlCl3,Al(OEt)3,H-Si,400,,,,,,103 +,AlCl3,Al(OiPr)3,"SLG, H-Si",150–375,,,,,,103 and 104 +,AlMe3,H2O,"Si, H-Si, GaAs, SiC, MgO, ZnO, CuO, LiMnO2, LiCoO2, SiO2, Al2O3, TiO2, PC, PMMA, PEEK, PTFE, PET, PP, GaQ3, cotton, paper, CNC, MWCNT, Fe, W, SS",25–500,,,,,,"86, 94, 107, 108, 118, 123, 158, 159, 179, 187, 189, 207, 209, 214, 219, 223–226, 243, 250, 258, 262, 268, 273, 279, 282, 298, 302, 309, 315, 321, 339, 348, 361, 362, 367, 387, 392, 624, 657, 770, 832, 1922, and 2304–2309" +,AlMe3,H2Oc,Cr,200,,,,,,292 +,AlMe3,H2O,ITO,,,300,,,,313 +,AlMe3,H2O2,"Si,H-Si, GaAs, SiO2, SS, Cu, Al",24–700,700–750,,,,,399 and 402 +,AlMe3,iPrOH,Si,250,,,,,,460 +,AlMe3,O3,"SiC, SiO2",300–450,,,,,,421 and 2309 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_029_table_020/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_029_table_020/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..5e49e1d4d753f67bd8b71e4a7250120240733dce --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_029_table_020/gold.csv @@ -0,0 +1,28 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,AlMe3,O2⚡,"Si, borosilicate, ITO, PE, PP, wool",25–300,,,,,,432 +,AlMe3,Al(OiPr)3,H-Si,300,,,,,,103 +,AlMe2Cl,H2O,SLG,125–500,,,,,,462 +,AlMe2(OiPr),H2O,H-Si,100–250,,,,,,465 +,AlEt3,H2O,Si,600–750,,,,,,56 +,Al(OnPr)3,H2O,"Si, SLG, ITO, Al",500,,,,,,88 +,Al(OnPr)3,tBuOH,"Si, SLG, ITO, Al",500,,,,,,88 +,Al(mmp)3,H2O,Si,250,,,,,,466 +,Al(NMe2)3,H2O,Si,200–400,,,,,,469 +,Al(NEt2)3,H2O,Si,250–325,,,,,,470 +,Al(NEt2)3,O3,Si,200–325,,,,,,472 and 473 +,Al(NiPr2)3,H2O,Si,250–325,,,,,,470 +SiO2,,,,Amorphous,,,,,, +,Si(OMe)4,H2O,Au-TiO2 catalyst,150,,,,,,602 +,SiH(NMe2)3,H2O2,TiO2,500,,,,,,624 +,SiH2(NMe2)2,O3,H-Si,225,,,,,,2310 +CaO,,,,Amorphous,Cubic,,,,, +,Ca(thd)2,O3,"Si, Glass",225–350,350,,,,,672 and 673 +,Ca(CpiPr3)2,H2O,"Si, borosilicate",,205–300,,,,,674 +Sc2O3,,,,Amorphous,Cubic,,,,, +,Sc(thd)3,O3,"SLG, Si",,335–375,,,,,682 +,Sc(Cp)3,H2O,"SLG, Si",,250–350,,,,,682 +,Sc(iPrAMD)3,H2O,H-Si,,290–360,,,,,683 +TiO2,,,,Amorphous,Anatase,Orthorhombic,Rutile,,, +,TiF4,H2O,borosilicate,,300–500,,,,,687 +,TiF4,H2O,SLG,,300–400,,400–500,,,687 +,TiCl4,H2O,"Si, H-Si, Ge, GaAs,ZnO, SiO2, Al2O3, glass, PC, PS, MWCNT, Ni, Mo, Ti, Ta, Pt",25–600,125–680,,275–680,,,"44, 94, 128, 207, 365, 719, 720, 722–724, 727, 737, 738, 742, 744, 746–749, 753, 756, 758–760, 762, 767, 769, 770, 773, 775–778, 780–782, 785, 786, 788–790, 795, 800, 801, 803, 805, 806, 808, 809, 814, 1011, and 2311–2313" diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_030_table_021/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_030_table_021/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..12b46cfbcd7fc51e8d950334580ce6d33d190907 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_030_table_021/gold.csv @@ -0,0 +1,23 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,TiCl4,H2O,RuO2,150,,,275–600,,,780 and 799 +,TiCl4,H2O,"RuO2 on sapphire, Sapphire(0001)",,,,425–450,,,799 and 812 +,TiCl4,H2O,Al2O3,100–150,150–350,,425–500,,,748 and 754 +,TiCl4,H2O,MgOe,,300,,,,,757 +,TiCl4,H2O,"Si, SiO2, SS, KBr",100–350,150–427,300–427,400–427,,,"123, 207, 728, 732, 733, 739, 750, 751, 772, and 807" +,TiCl4,H2O,Si,27–67,,,27–67,,,731 +,TiCl4,H2O2,Fe,100,,,,,,490 +,TiCl4,H2O2,"H-Si, MgOe",,340–490,,,,,815 +,TiCl4,MeOH,"Si, SiO2",,375,,,,,817 +,TiCl4,MeOH,Al2O3,,,,375,,,817 +,TiCl4,O2⚡,H-Si,,110–200,,,,,818 and 819 +,TiI4,H2O2,"Si, Al2O3e, SiO2, SLG",135,165–375,,300–490,,,"820, 823, and 824" +,TiI4,H2O,"Si, Al2O3e, SiO2, AAO, CNS",135,165–375,,445,,,820–822 and 824 +,TiI4,O2,H-Si,,235–457,,457,,,826 +,TiI4,O2,Al2O3e,,,,300–455,,,827 +,TiI4,O2,MgOe,,375–455,,,,,827 +,Ti(CpMe5)(OMe)3,O3,Ru,280,,,280,,,828 +,Ti(CpMe5)(OMe)3,O3,TiN,,280,,,,,828 +,Ti(OMe)4,H2O,"Glass, Ni, Si, Ti",200–300,250–350,,,,,"830, 834, 836, and 837" +,Ti(OEt)4,H2O,"Si, H-Si, SiO2, SLG, paper, Mo, Ti",100–300,180–350,,,,,"128, 760, 773, 782, 831, 832, 837, 839–841, and 845" +,Ti(OEt)4,H2O2,"H-Si, Mo",125–175,225–350,,,,,773 and 782 +,Ti(OiPr)4,H2O,"Si, SiO2, Glass, PC, PVP, Al2O3, ZnO, SS, Ru, Pt, CrN, TiSi2, CNC",50–225,150–350,,,,,"128, 273, 328, 362, 788, 846–848, 850, 852, 855, 856, 859–861, 864–868, 870, 875, 877, 881, 914, and 2314" diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_031_table_022/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_031_table_022/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..427f1d86ff877c2219c74318a153d6a4a61e8e30 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_031_table_022/gold.csv @@ -0,0 +1,28 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,Ti(OiPr)4,H2O,"RuO2, ISM",70–160,225–300,,225–300,,,318 and 859 +,Ti(OiPr)4,H2O2,"Si, SiO2, PE, Fe, Ni",77–150,180–300,,,,,"334, 848, and 882" +,Ti(OiPr)4,O2,silica,100–165,,,,,,736 and 884 +,Ti(OiPr)4,O3,"Si, Pt",,250,,,,,899 and 1612 +,Ti(OiPr)4,O3,Ru,,,,250,,,"899, 900, 1612, and 2315" +,Ti(OiPr)4,O3,"Ru, TiN",,250,,250,,,906 +,Ti(OiPr)4,O2⚡,"Si, SiNx, borosilicate, Pt, RuO2, PC, PP, wool",50–275,250–300,,,,,"439, 864, 885, 886, 891, and 892" +,Ti(OiPr)4,O2⚡,"H-Si, Ru, Ir",,150–250,,150–250,,,"888, 890, and 892" +,Ti(OiPr)4,O2⚡,IrO2,,,,250,,,892 +,Ti(OiPr)4,H2O⚡,Si,50–210,,,,,,864 +,Ti(OiPr)4,N2O⚡,"Ru, Al2O3",,250–280,,250–280,,,890 and 907 +,Ti(OiPr)4,HCOOH,"Si, SrTiO3, LaAlO3, MgO, wool, cellulose, latex, CNT",150–200,,,,,,908 +,Ti(OiPr)4,CH3COOH,"Si, SrTiO3, LaAlO3, MgO, wool, cellulose, latex, CNT",150–200,,,,,,908–911 +,Ti(OiPr)4,NH3,xerogel,140,,,,,,898 +,Ti(thd)2(OiPr)2,H2O,Pt,220–420,,,,,,913 +,Ti(thd)2(OiPr)2,H2O,Pt,,340–470,,,,,916 +,Ti(trhd)2\-(O(CMe2Et)2,H2O,Pt,220–420,,,,,,913 +,Ti(NMe2)4,H2O,"Si, H-Si, CeO2, ZnO, Ni",50–250,250–350,,300–350,,,"864, 914, 918, 919, 921, and 923" +,Ti(NMe2)4,H2O⚡,Si,50–210,,,,,,864 +,Ti(NMe2)4,O2⚡,"Si, Kapton, SS, Zn",50–210,250–400,,300–400,,,"864, 928, and 930" +VOx,,,,Amorphous,Orthorhombic V2O5,Monoclinic VO2,,,, +,VOCl3,H2O,silica,,490,490,,,,1005 +,VO(acac)2,O2,glass,,,400–475,,,,1019 +,VO(OiPr)3,H2O,"SnO2, SiO2, Ti",50–150,,,,,,"1006, 1008, and 1010" +,VO(OiPr)3,H2O⚡,SiO2,150,,,,,,1010 +,VO(OiPr)3,O2,"silica, titania",90–120,,,,,,1012–1014 +,VO(OiPr)3,O2⚡,SiO2,,150,,,,,1010 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_032_table_023/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_032_table_023/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..a661985f62f4fb974b32d423fb6be67b80b6e815 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_032_table_023/gold.csv @@ -0,0 +1,36 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,VO(OnPr)3,CH3COOH,"CNT, CNF",200,200,,,,,"910, 1015, and 1016" +CrOx,,,,Amorphous,-Cr2O3,,,,, +,Cr(acac)3,air,alumina,200,,,,,,1033 and 1034 +,CrO2Cl2,MeOH,Al2O3e,,330–465,,,,,1030 and 1031 +,CrO2Cl2,MeOH,"SiO2, Si, TiO2",330–375,330–465,,,,,817 and 1031 +MnOx,,,,Amorphous,β-MnO2,Mn3O4,-MnO2,-MnO2,MnO, +,Mn(thd)3,O3,"SLG, Si",,162–257,235–331,,,,1039 +,Mn(thd)3,O3,"NaCl, KCl, KBr",,,,186,,,1040 +,Mn(thd)3,O3,"SiO2, Al2O3, muscovite, MgO, SLG, Si",,186,,,,,1040 +,Mn(thd)3,O3,Al2O3,,,,,186,,1040 +,Mn(thd)3,O3,Al2O3e,,,,,186,,1041 +,Mn(CpEt)2,H2O,Si,,,,,,150,1037 +FeOx,,,,Amorphous,-Fe2O3,-Fe2O3,Fe3O4,,, +,FeCl3,H2O,Pt,,500,,,,,1054 +,FeCp2,O2,"Si, Al2O3",,350–600,350–600,350–600,,,1062 +,FeCp2,O2,TiO2,,400–500,,400,,,821 +,FeCp2,O2,ZrO2,367–534,,,,,,1063 +,Fe(thd)3,O3,"SLG, Si, Al2O3",,160–210,,,,,1057 and 1058 +,Fe(thd)3,O3,MgO,,,160–210,,,,1058 +,Fe(thd)3,O3,"SLG, Al2O3",,186,,,,,1057 +,Fe(OtBu)3,H2O,Al2O3,,130–170,,,,,1066 +CoOx,,,,Amorphous,Co3O4,CoO,,,, +,CoI2,O2,"SiO2, MgOe",,475–700,,,,,1078 +,Co(acac)3,O2,silica,,400,,,,,1083 +,Co(thd)2,O3,"Si, SLG, Corning 7059",,114–450,250–400,,,,1088 and 1089 +,Co(thd)3,O3,"Al2O3e, MgOe, SrTiOe",,138–283,,,,,1090 +NiO,,,,Amorphous,Cubic,,,,, +,Ni(acac)2,H2O,glass,190–310,,,,,,1107 +,Ni(acac)2,CH3COOH,glass,190–310,,,,,,1107 +,Ni(acac)2,O3+H2O,glass,,190–310,,,,,1107 +,Ni(dmg)2,H2O,glass,190–310,,,,,,1107 +,Ni(dmg)2,O3,glass,,190–310,,,,,1107 +,Ni(apo)2,O3,glass,,190–310,,,,,1107 +,Ni(dmamp)2,H2O,H-Si,100–160,,,,,,1102 and 1103 +,Ni(CpEt)2,O3,H-Si,150,200–300,,,,,1100 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_033_table_024/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_033_table_024/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..097edc3c76f1976a31922dcd6634037478e38797 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_033_table_024/gold.csv @@ -0,0 +1,15 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,Ni(Cp)2,O3,"H-Si, Ni, Pt, W, TiN",,150–300,,,,,1098–1100 +,Ni(thd)2,H2O,"SiO2, Si",,205–275,,,,,1108 and 1110 +,Ni(thd)2,H2O,"MgO(100)e, -Al2O3(001)e",,200–275,,,,,1109 +CuOx,,,,Amorphous,Cu2O,,,,, +,Cu(nBu3P)2(acac),O2+H2O,Ta/TaN,,100–150,,,,,1139 +ZnO,,,,Amorphous,Hexagonal,,,,, +,Zn,H2O,SLG,,430,,,,,1151 +,ZnCl2,O2,"Sapphire(0001)e, GaN e",,450–550,,,,,1153–1155 +,ZnMe2,H2O,"Si, glass, GaN/Al2O3e",,80–300,,,,,1157 and 1160–1162 +,ZnMe2,O2⚡,"H-Si, Si",,25–120,,,,,1163 and 1164 +,ZnEt2,H2O,"Si, H-Si, glass, SiO2, Al2O3, TiO2, SnO2, ZnO, MgO, ZnTe, PS, CNT, ISM",,23–400,,,,,"60, 282, 297, 318, 1149, 1157, 1160, 1161, 1186, 1190, 1192–1194, 1196, 1197, 1199, 1201, 1203, 1204, 1207–1210, 1213, 1215–1220, 1222, 1223, 1225, 1228, 1231–1233, 1235–1238, 1241, 1243, 1245, 1248, 1250, 1253, 1257, 1259, 1261–1265, and 2316–2318" +,ZnEt2,H2O,Sapphire(0001),,40–300,,,,,"1200, 1214, 1246, 1247, and 2316" +,ZnEt2,H2O,Sapphire(0001)e,,25–450,,,,,"812, 1226, 1229, 1246, 1247, and 1251" +,ZnEt2,H2O,"GaN/Al2O3e, p-GaNe, YSZ",,180–300,,,,,"1162, 1202, 1225, 1242, 1244, and 1248" diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_034_table_025/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_034_table_025/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..08f32dea474aa3502b75104694ae48ac67d5b4f3 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_034_table_025/gold.csv @@ -0,0 +1,27 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,ZnEt2,H2O,"silica, Bi2O3",150–200,150–200,,,,,"1149, 1211, and 1239" +,ZnEt2,H2O⚡,SiO2,,100–250,,,,,1266 +,ZnEt2,H2O-O2,Al2O3,,180,,,,,1186 +,ZnEt2,H2O,Sapphire(0001)e,,600,,,,,1181 +,ZnEt2,H2O2,"TiO2, SiO2",,50–100,,,,,"1223, 1268, and 1269" +,ZnEt2,H2O+NH3c,Al2O3,,200,,,,,292 +,ZnEt2,H2O+NH3 +O2c,Al2O3,,200,,,,,457 +,ZnEt2,O3,"SiO2, TiO2",,170–300,,,,,"1193, 1208, and 1209" +,ZnEt2,O2⚡,"H-Si, ZnO, ITO, Glass",,75–200,,,,,"1270–1272, 1274, and 2308" +,ZnEt2,O2⚡,PES,100,150–250,,,,,1275 +,ZnEt2,N2O,"Al2O3, Sapphire(11-20)/ZnO buffer",,300–600,,,,,1276 and 1278 +,ZnEt2,N2O⚡,Al2O3,,200,,,,,458 +,Zn(CH3COO)2,H2O,"Sapphire(0001), SLG, Si, GaN, GaAs",,280–400,,,,,"1160, 1279, 1282, 1284, and 1285" +Ga2O3,,,,Amorphous,,,,,, +,Ga(acac)2,H2O,"SLG, Corning 7059",365–380,,,,,,1368 +,Ga(acac)2,O3,"SLG, Corning 7059",350–375,,,,,,1368 +,Ga2(NMe2)6,H2O,Si,170–250,,,,,,1373 +,[GaMe2NH2]3,O2⚡,"Si, SiO2, Sapphire",50–250,,,,,,1370–1372 +Y2O3,,,,Amorphous,Cubic,,,,, +,Y(Cp)3,H2O,Si,,250–400,,,,,1515 +,Y(CpMe)3,H2O,Si,,200–400,,,,,1515 +,Y(CpEt)3,H2O,Si,,250,,,,,1522 +,Y(thd)3,O2,"Si, SLG, Corning 7059",,425–600,,,,,1524 +,Y(thd)3,O3,"Si, glass",,200–600,,,,,1524–1526 +,Y(thd)3,O2⚡,Si,,350,,,,,1530 and 1531 +,Y(iPrAMD)3,H2O,H-Si,,280,,,,,683 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_035_table_026/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_035_table_026/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..d2a6258baba7d138fa34f5620de8b55710881780 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_035_table_026/gold.csv @@ -0,0 +1,36 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +ZrO2,,,,Amorphous,Cubic,Tetragonal,Monoclinic,Orthorhombic,, +,ZrCl4,H2O,"SLG, SiO2",300–500,,,,,,"128, 1536, and 1555" +,ZrCl4,H2O,"Ta2O5, TaxNbyOz",300,300,300,,,,1563 +,ZrCl4,H2O,"H-Si, SiO2, Al2O3",160–450,180–300,300–600,300–600,,,"1537, 1538, 1544, and 1545" +,ZrCl4,H2O,"Si, SLG",160–325,,250–350,300–350,,,"85, 1549, 1558, 1559, and 1561" +,ZrCl4,H2O,"Si, H-Si, SiO2, glass, Ta2O5, sapphire, MgO",,,230–500,230–500,,,"140, 1539, 1540, 1548, 1554, 1556, and 1557" +,ZrCl4,H2O,(Nb1-xTax)2O5,,,,325,,,1539 +,ZrCl4,H2O,Ge(100)e,,300,300,,,,1547 +,ZrCl4,H2O2,H-Si,160–450,180–210,210–600,300–600,,,1544 and 1545 +,ZrI4,H2O+H2O2,H-Si,272,272–350,272–350,,,,1569 +,ZrI4,H2O+H2O2,H-Si,250,250–275,325–500,325–500,,,1568 +,ZrI4,H2O+H2O2,H-Si,,250–300,325–500,500,,,1567 +,ZrI4,H2O+H2O2,"H-Si, Pt",,250,250–500,250–500,,,1570 +,Zr(tBuO)4,H2O,"Si, SLG, Corning 7059",175,,200–300,200–300,,,861 and 1588 +,Zr(tBuO)4,H2O,"Al2O3, PC",,,120–160,,,,273 +,Zr(tBuO)4,H2O ☼,PET,20,,,,,,1594 +,Zr(tBuO)2(dmae)2,H2O,SLG,190–240,340,340,290–340,,,1599 +,Zr(dmae)4,H2O,"SLG, borosilicate",190–240,340,340,300–500,,,1587 +,Zr(iPrO)2(dmae)2,H2O,"SLG, borosilicate",190–240,340,340,300–500,,,1587 +,Zr(thd)4,O3,"Si, SLG",275–300,,,300–500,300–500,,1571 +,ZrCp2Me2,H2O,Si,,200–300 and 400–500,,200–500,200–500,,1574 +,ZrCp2Me2,O3,"Si, SLG",250–300,,,300–500,250–500,,1571 +,ZrCp2Me(OMe),O3,Si,,,300,,,,1577 +,ZrCp2Cl2,O3,"Si, SLG",250–300,,,250–500,275–500,,1571 +,ZrCp(NMe2)3,O3,Si,300,300,300,,,,1578 +,Zr(CpMe)2Me(OMe),H2O,Si,300,,,,,,2319 +,Zr(CpMe)2Me(OtBu),H2O,Si,300,,,,,,2319 +,Zr(CpMe)2Me2,H2O,Si,,350,350,350,350,,1579 +,Zr(CpMe)2Me2,O3,SiO2,300–400,300–400,300–400,300–400,300–400,,1580 +,Zr(CpMe)2Me(OMe),H2O,Si,,350,350,350,350,,1579 +,Zr(CpMe)2Me(OMe),O3,SiO2,300–400,300–400,300–400,300–400,300–400,,1580 +,Zr(CpMe)2Me(OMe),O3,SiO2,,300–350,300–350,300–350,,,1583 and 1584 +,Zr(CpMe)(NMe2)3,O3,Si,300,300,300,,,,1578 +,Zr(CpEt)(NMe2)3,O3,Si,300,300,300,,,,1578 +,Zr[(Me3Si)2N]2Cl2,H2O,H-Si,250,,,,,,1620 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_036_table_027/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_036_table_027/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..1c1d2b6c2dee82dfdf83f3c672f19dd378e835b9 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_036_table_027/gold.csv @@ -0,0 +1,35 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,Zr(NMe2)4,H2O,Si,50,100–200,100–200,,,,1601 and 1602 +,Zr(NEtMe)4,H2O,Si,300,,,,,,1609 +,Zr(NEtMe)4,O3,TiN,,225–300,225–300,225–300,,,1612 and 1613 +,Zr(NEtMe)4,O3,Si,275,,,,,,1614 +,Zr(NEtMe)4,O2⚡,H-Si,,100–250,100–280,,,,1617 and 1619 +,Zr(NEt2)4,O2,"Si, Ge",300,,,,,,1607 +,Zr(MeAMD)4,H2O,Si,300,,,,,,1609 +Nb2O5,,,,Amorphous,,,,,, +,Nb(OEt)5,H2O,SLG,215–275,,,,,,1626 +RuO2,,,,Amorphous,Rutile,,,,, +,Ru(CpEt)2,O2,"Si, SiO2, TiN",,265–270,,,,,"1652, 1654, and 1692" +,Ru(CpEt)2,O2,Ta2O5,,300–350,,,,,1687 +,Ru(thd)2(cod),O2,Si,,290,,,,,1693 +Rh2O3,,,,Amorphous,,,,,, +,Rh(acac)3,O3,"Si, SLG",160–180,,,,,,1695 +In2O3,,,,Amorphous,Cubic,,,,, +,InCl3,H2O,SLG,,400–500,,,,,1753 +,InCl3,H2O+H2O2,Corning 7059,,300–500,,,,,1757 +,InCp,O3,"Si, glass, Al2O3",,200–450,,,,,1759 and 1760 +,In(acac)3,H2O,Si,175,200–225,,,,,1761 +,In(acac)3,O3,Si,200,,,,,,1761 +SnO2,,,,Amorphous,Tetragonal,,,,, +,SnCl4,H2O,Ga2O3,350,,,,,,1812 +,SnCl4,H2O,"SiO2, Graphene",180–200,300–400,,,,,"747, 1802, and 1810" +,SnCl4,H2O,Si,,500,,,,,1369 +,SnCl4,H2O,"ZnS, CuOx",350,,,,,,1808 and 1811 +,SnCl4,H2O,"SLG, Corning 7059",,300–600,,,,,"1796, 1799, and 1801" +,SnCl4,H2O,Al2O3e,,400–600,,,,,1804 and 1805 +,SnCl4,H2O+O3 (hexane cat.),SLG,,500,,,,,1799 +,SnCl4,H2O2,Si,150–430,,,,,,1816 +,SnCl4,H2O2,Al2O3e,,600–700,,,,,1804 and 1813 +,SnI4,H2O2,Al2O3e,,600,,,,,1804 +,SnI4,O2,SiO2,,400–750,,,,,1820 +,SnI4,O2,Al2O3e,,400–750,,,,,"1804, 1813, 1820, and 1821" diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_037_table_028/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_037_table_028/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..dcd616e34583f4dd49c0754039388e516cc35734 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_037_table_028/gold.csv @@ -0,0 +1,32 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,Sn(NMe2)4,H2O2,"Si, glass",50–300,,,,,,1826 +,Sn(tbba),H2O2,"SiN, glass",,120,,,,,1828 +,SnnBu2(OAc)2,O2⚡,"SiO2, TiO2k",,200–400,,,,,"1822, 1823, and 1825" +Sb2O5,,,,Amorphous,,,,,, +,Sb(NMe2)3,O3,Si,120,,,,,,1829 +BaO(Ba(OH)2)d,,,,Amorphous Ba(OH)2,Monoclinic Ba(OH)2,Orthorhombic Ba(OH)2,,,, +,Ba(CptBu3)2,H2O,Al2O3,240,290–340,340,,,,1830 +La2O3,,,,Amorphous,Cubic,Hexagonal,Hexagonal La(OH)3,Monoclinic La(O)OH,, +,La(thd)3,O3,"SLG, Si",200–300,300–450,400–450,,,,"44, 1088, and 1577" +,La(thd)3,O3,Corning 7059,200–300,300–350,400–450,,,,1088 +,La(thd)3,O3,Corning 7059,225–300,300–425,,,,,1833 +,La(thd)3,O3,SiO2l,,350–500,350–500,,,,1835 +,La(thd)3,O3,SiO2m,,350,,350,350,,1835 +,La(thd)3,H2O,"H-Si, TiN",230–350,,,,,,"237, 1836, and 1837" +,La[N(SiMe3)2]3,H2O,H-Si,250,250,,,,,1838 +,La[N(SiMe3)2]3,H2O,"H-Si, Si, borosilicate",200–400,,,,,,1840 +,La[N(SiMe3)2]3,H2O,Si,,,300,,,,1841 +,La(Cp)3,H2O,SiO2l,,260,260,,,,1835 +,La(Cp)3,H2O,SiO2m,,,,260,,,1835 +,La(CpEt)3,O2⚡,Si,350,,350–400,,,,1847 +,La(CpiPr)3,O3,Si,200,,,200,,,1852 +,La(CpiPr)3,O3,Ge,200,,,,,,1852 +,La(iPrfAMD)3,O2,"Si, Ge",300,,,,,,1607 +CeO2,,,,Amorphous,Cubic,,,,, +,Ce(thd)4,O3,"SLG, Si",,175–250,,,,,1859 +,Ce(thd)3phen,O3,"SLG, Si",,225–275,,,,,1859 +PrOx,,,,Amorphous,,,,,, +,Pr[N(SiMe3)2]3,H2O,"borosilicate, Si",200–400,,,,,,1861 and 1862 +,Pr(iPrAMD)3,H2O,H-Si,200–315,,,,,,1863 +Nd2O3,,,,Amorphous,Cubic,,,,, +,Nd(thd)3,O3,"Si, SLG",200–250,290–325,,,,,1864 and 1865 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_038_table_029/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_038_table_029/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..db39657c06700f0cf1328998348416f69e010841 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_038_table_029/gold.csv @@ -0,0 +1,30 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +Sm2O3,,,,Amorphous,Cubic,,,,, +,Sm(thd)3,O3,Si,,300,,,,,1864 +Eu2O3,,,,Amorphous,Cubic,,,,, +,Eu(thd)3,O3,Si,,300,,,,,1864 +Gd2O3,,,,Amorphous,Cubic,Monoclinic,,,, +,Gd(thd)3,O3,Si,,300,,,,,1864 and 1866 +,Gd(CpMe)3,H2O,Si,,150–250,,,,,1866 +,Gd(mmp)3-tetraglyme,H2O,Si,,200–250,,,,,1867 +,Gd[OCMe2CHMe2]3,H2O,"Si, H-Si, SLG, Al2O3",350,300–400,250–300,,,,1868 and 1869 +,Gd[(NiPr)2\-CN(CH3)2]3,H2O,Si,200,160–250,,,,,1871 and 1873 +Dy2O3,,,,Amorphous,Cubic,,,,, +,Dy(thd)3,O3,Si,,300,,,,,1864 +Ho2O3,,,,Amorphous,Cubic,,,,, +,Ho(thd)3,O3,Si,,300,,,,,1864 +Er2O3,,,,Amorphous,Cubic,,,,, +,Er(thd)3,O3,Si,,300–350,,,,,1584 and 1864 +,Er(thd)3,O2⚡,Si,,350,,,,,1530 and 1531 +,Er(CpMe)3,H2O,"Si, SLG",,250–300,,,,,1875 +,Er(tBuAMD)3,O3,Si,250,300,,,,,1876 +Tm2O3,,,,Amorphous,Cubic,,,,, +,Tm(thd)3,O3,Si,,300,,,,,1864 +Yb2O3,,,,Amorphous,Cubic,,,,, +,Yb(thd)3,O3,"Si, glass",,300–350,,,,,1877 +Lu2O3,,,,Amorphous,,,,,, +,Lu[Cp(SiMe3)]2Cl,H2O,SiO2,360–370,,,,,,1879 and 1880 +HfO2,,,,Amorphous,Cubic,Tetragonal,Monoclinic,Orthorhombic,, +,HfCl4,H2O,H-Si,300,,,,,,1897 and 1947 +,HfCl4,H2O,"Si, H-Si, SiO2, GaAs, TiN, Pt, Ir, Ru",200–350,,,250–600,,,"1918, 1919, 1922, 1930, 1931, 1970, and 2320" +,HfCl4,H2O,"H-Si, Ge, SiO2",226–300,226–300,,300–750,,,"1915, 1935, and 1974" diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_039_table_030/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_039_table_030/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..eed44dc0f2c8552cb4cf6c7940a0ebe9e4dc1c30 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_039_table_030/gold.csv @@ -0,0 +1,38 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,HfCl4,H2O,"H-Si, SiO2",300,600,,300–600,,,1901 +,HfCl4,H2O,Si,600–880,880–940,500–600,500–940,500–600,,1888 +,HfCl4,H2O,"Si, H-Si, SiO2, HfO2",225–300,300–750,300–750,300–940,300–750,,"1554, 1887, 1906, 1918, and 2321" +,HfCl4,H2O,Si,,300,300,300,300,,1559 +,HfCl4,H2O,"Si, SiO2, sapphire, MgO",,600,600,600,600,,1556 and 1557 +,HfCl4,H2O,H-Si,,,300,300,300,,1566 +,HfCl4,H2O,"Si, H-Si",,,300,300,,,"189, 1561, and 1959" +,HfCl4,H2O,"Si, H-Si, glass, Pt, TiN",,,,300–350,,,"1883, 1948, and 1971" +,HfCl4,H2O,Ge,,,,375,375,,1917 +,HfCl4,H2O,Pt,350,,,350,350,,1970 +,HfCl4,H2O,"Si, SiO2, glass",300–500,,500,300–600,500,,"1558, 1884, and 1932" +,HfCl4,H2O,SiO2,300,,300,300,,,1555 +,HfCl4,O3,H-Si,300,,,300,300,,1897 +,HfCl4,O3,Ge,375,,,,,,1917 +,HfI4,H2O,"H-Si, SiO2",300,600,,300–600,,,1566 and 1901 +,HfI4,H2O,poly-Si,225,400–500,400–500,300–500,400–500,,1981 +,HfI4,H2O,MgO,,,,400–500,,,1981 +,HfI4,H2O2,poly-Si,225,400–500,400–500,300–500,400–500,,1981 +,HfI4,H2O2,MgO,,,,400–500,,,1981 +,HfI4,O2,H-Si,,,,570–750,,,1984 +,HfCp2Me2,H2O,Si,,,,300–425,,,1989 and 1990 +,HfCp2Me2,O3,Si,,,,300–425,,,1989 and 1990 +,Hf(CpMe)2Me2,H2O,Si,,350,350,350,350,,1579 +,Hf(CpMe)2Me2,O3,Si,,,,300–500,,,1991 +,Hf(CpMe)2(OMe)Me,H2O,Si,,350,350,350,350,,1579 +,Hf(CpMe)2(OMe)Me,O3,"Si, TiN",,350,350,300–500,,,1521 and 1991 +,Hf(CpMe)2(OiPr)Me,H2O,Si,250–440,,,,,,1993 +,Hf(CpMe)2(mmp)Me,H2O,Si,250–440,,,,,,1993 +,HfCp(NMe2)3,O3,Si,250,300–350,300–350,300–350,,,1994 +,Hf(CpMe)(NMe2)3,O3,Si,250,300–350,300–350,300–350,,,1994 +,Hf(tBuO)4,O2,H-Si,350–480,,,,,,2322 +,Hf(mmp)4,O2,Si,,,,550,,,684 +,Hf(mmp)4,H2O,"borosilicate, Si",225–325,,,325–425,,,1867 and 2004 +,Hf(mmp)4,H2O2,"borosilicate, Si",300,,,325–425,,,2004 +,Hf(tBuO)2(mmp)2,H2O,"borosilicate, SiO2",275–300,,360,300–400,,,2001 +,Hf(OCEtMe2)4,H2O,H-Si,250–350,,,,,,2005 +,Hf(OCEtMe2)4,O2⚡,H-Si,,,250,250,,,2006 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_040_table_031/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_040_table_031/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..74108d28cc4f789e1259de2c819bb5cb7bec1847 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_040_table_031/gold.csv @@ -0,0 +1,33 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,Hf(OiPr)4,O2,H-Si,,,,300,,,1995 +,Hf(OtBu)4,HCOOH,"Si, SrTiO3, LaAlO3, MgO, wool, cellulose, latex, CNT",100–125,,,,,,908 +,Hf(OtBu)4,CH3COOH,"Si, SrTiO3, LaAlO3, MgO, wool, cellulose, latex, CNT",175–275,,,,,,908–911 +,Hf(OtBu)(NEtMe)3,O3,Si,300,,,300,,,2002 +,Hf(OtBu)(NEtMe)3,O3,TiO2(rutile),250,,250,,,,355 +,Hf(OtBu)(NEtMe)3,O3,TiO2(anatase),,,,250,,,355 +,Hf(NMe2)4,H2O,Si,50–150,,,200–300,,,1601 and 1602 +,Hf(NMe2)4,H2O,CNC,,,,150,,,362 +,Hf(NMe2)4,H2O,"H-Si, SiO2",200–400,,,205–400,,,"250, 2011, 2023, and 2320" +,Hf(NMe2)4,H2O,Si,250,,350,350,350,,2010 and 2016 +,Hf(NMe2)4,H2O,Ge,225,,,,,,2021 +,Hf(NMe2)4,O2⚡,"Si, H-Si",250,,,280,,,1619 and 2041 +,Hf(NEtMe)4,H2O,Si,250,,,250,,,2023 +,Hf(NEtMe)4,H2O,"borosilicate, ITO, Si, Al2O3",150–200,,200–300,200–300,200–300,,"1601, 2071, 2072, and 2082" +,Hf(NEtMe)4,H2O,H-Si,200–250,,,,,,2023 and 2081 +,Hf(NEtMe)4,H2O,InP,,,350,350,,,2094 +,Hf(NEtMe)4,D2O,"H-Si, SixNy",60–100,,,,,,2074 and 2323 +,Hf(NEtMe)4,O3,"H-Si, SiO2",180–275,,350,,350,,2102 +,Hf(NEtMe)4,O2⚡,Si,290,,,,,,963 +,Hf(NEt2)4,H2O,Si,150–250,,,,,,1522 and 1932 +,Hf(NEt2)4,O3,"Si, H-Si",200–275,,,,,,"472, 473, and 2310" +,Hf(NEt2)4,O2⚡,H-Si,,,250,250,,,2006 +,Hf(ONEt2)4,H2O,"borosilicate, Si",300,,,300,,,2007 +,Hf(NO3)4,H2O,H-Si,180,,,,,,2114 +Ta2O5,,,,Amorphous,Hexagonal,Tetragonal,Orthorhombic,,, +,TaF5,H2O,H-Si,400–450,400–450,,400,,,2136 +,TaCl5,H2O,"Glass, Si",300–500,,,,,,"392, 1291, and 1883" +,TaCl5,H2O,"Glass, Si",80–160,400–500,400–500,,,,2130 +,TaCl5,H2O,Corning 7059,300–325,300–350,,400,,,2133 +,TaI5,H2O,H-Si,250–400,350–400,,350–400,,,2137 +,TaI5,H2O,SiO2,250–400,,,,,,2137 +,Ta(OEt)5,H2O,"Si, SLG, SS, NbxZryOz",170–325,,,,,,"123, 1563, 2139, 2145, and 2146" diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_041_table_032/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_041_table_032/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..cefcbce72e8e2e17d6e6d1ee8b24db083a200396 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_041_table_032/gold.csv @@ -0,0 +1,25 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References +,Ta(OEt)5,H2O ☼,Si,170–400,,,,,,2142 +,Ta(OEt)5,TaCl5,Corning 7059,275–450,,,,,,2135 +,Ta(OEt)5,O2 ☼,"Si, SiO2",190–285,,,,,,2149 +,Ta(OEt)5,O2⚡,"Si, borosilicate, Pt",150–250,,,,,,2148 +,Ta(OEt)5,O2⚡+H2O,"Si, borosilicate, Pt",150–250,,,,,,2148 +,Ta(OEt)4(dmae),O3,N-Si,400,,,,,,2150 +,Ta(NMe2)5,H2O,H-Si,150–350,,,,,,"918, 2152, and 2153" +,Ta(NMe2)5,O2⚡,"H-Si, Si, SiO2",100–350,,,,,,"918, 1650, 2152, and 2155" +,Ta(NEt)(NEt2)3,H2O,"Si, SiO2",50–350,,,,,,2156 +,Ta(NEt2)5,H2O,"Si, SiO2",50–250,,,,,,2156 +,Ta(NtBu)(tBu2pz)3,O3,Si,300–450,,,,,,2157 +,Ta(NtBu)-(iPrAMD)2(NMe2),H2O,Si,275–350,,,,,,2158 +WOx,,,,Amorphous,Monoclinic,,,,, +,WF6+WO3,H2O,sapphire,,200,,,,,2220 +,W2(NMe2)6,H2O,Si,160–200,,,,,,2223 +IrO2,,,,Amorphous,Tetragonal,,,,, +,Ir(acac)3,O3,"Si, SLG, Al2O3",,165–200,,,,,2252 +,Ir(CpEt)(cod),O2,SiO2,,290,,,,,2248 +PtOx,,,,Amorphous,,,,,, +,Pt(acac)2,O3,"Si, SLG, Al2O3",120–130,,,,,,2273 +,Pt(CpMe)Me3,O2⚡,"Si, SiO2",300,,,,,,2260 +PbO2,,,,Amorphous,Tetragonal,Orthorhombic,,,, +,Pb(thd)2,O3,Si,,150–300,150–300,,,,2275 +,PbPh4,O3,Si,,185–400,185–400,,,,2275 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_048_table_033/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_048_table_033/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..419c4e76e61142a4f8d66c74f5e9e83882ce580c --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_048_table_033/gold.csv @@ -0,0 +1,37 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,,,References +BN,,,,Amorphous,Turbostratic,,, +,BBr3,NH3,silica,400,750,,,49 +,BBr3,NH3,Al2O3,,250–600,,,50 +,BBr3,NH3☼,Al2O3,,250–600,,,50 +AlN,,,,Amorphous,Hexagonal,,, +,AlCl3,NH3,SLG,,500,,,477 +,AlCl3,NH3+H2⚡,H-Si,,350,,,480 +,AlMe3,NH3,Corning 7059,,325–425,,,484 +,AlMe3,NH3,Si,325–400,,,,488 +,AlMe3,NH3,Sapphire,,1200,,,489 +,AlEt3,NH3,Sapphire,,450,,,495 +,Al(NMe2)3,NH3,Ge,200–250,,,,501 +,Me2EtN:AlH3,NH3,Al2O3,,300–380,,,498 +,Me2EtN:AlH3,NH3,Si,300–380,,,,498 +TiN,,,,Amorphous,Cubic,,, +,TiCl4,NH3,"SLG, Si, H-Si, SiO2, HfSiOx, HfO2",,300–550,,,"933, 938–940, 946, 951, 952, and 955" +,TiCl4,NH3-Zn,SLG,,400–500,,,934 and 935 +,TiCl4,NH3-AlMe3,GaAs,275,,,,957 +,TiCl4,H2+N2⚡,"Si, SiO2",,100–400,,,"958, 960, and 962–965" +,TiCl4,DMHy,SLG,250,300–400,,,966 +,TiCl4,tBuNH2,"SLG, borosilicate",400,400,,,967 +,TiCl4,allylNH2,"SLG, borosilicate",400,400,,,967 +,TiI4,NH3,SLG,,400–500,,,968 +,TiI4,tBuNH2,"SLG, borosilicate",400,400,,,967 +,TiI4,allylNH2,"SLG, borosilicate",400,400,,,967 +,Ti(NMe2)4,NH3,H-Si,200–300,350,,,975 +,Ti(NMe2)4,NH3,"Si, SiO2",180,180,,,973 and 980 +,Ti(NMe2)4,NH3⚡,SiO2,250,,,,988 and 989 +,Ti(NMe2)4,NH3+H2⚡,Al2O3,,150–300,,,493 and 990 +,Ti(NMe2)4,N2⚡,SiO2,250,,,,989 +,Ti(NMe2)4,N2⚡,SiO2,,200,,,994 +,Ti(NMe2)4,H2⚡,"Si, SiO2",150–250,150,,,989 and 995 +,Ti(NEtMe)4,NH3,"Si, SiO2",150–220,,,,996 and 997 +Cu3N,,,,Amorphous,Cubic,,, +,[Cu(sBuAMD)]2,NH3,Ru,,140–300,,,1140 +,Cu(hfac)2,H2O-NH3,SiO2,,210–300,,,1141 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_049_table_034/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_049_table_034/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..4994bed25d4a6dc154b5df1c50b56ccfa4d9e32f --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_049_table_034/gold.csv @@ -0,0 +1,38 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,,,References +GaN,,,,Amorphous,Cubic,,, +,GaCl,NH3,GaN,,300–400,,,1376 and 1377 +,GaCl,NH3,GaAs,300–400,,,,1377 +,GaCl3,NH3,GaAs(001),500,,,,1378 +,GaCl3,NH3,GaAs(111)e,,500,,,1378 +,GaCl3,NH3,H-Si,,650,,,1379 +,GaMe3,NH3,AlNe,,550–650,,,1380 +,GaMe3,NH3,AlNe,,800–900,,,1384 +,GaMe3,NH3,GaAs(001),,500–650,,,1383 +,GaEt3,NH3,AlNe,,450–900,,,1385 +,GaEt3,NH3,SiC(0001)e,,250–500,,,1387 +,GaEt3,NH3,SiC(0001),150–170,170–250,,,1387 +ZrNx,,,,Amorphous,,,, +,Zr(NMe2)4,NH3,Si,150–250,,,,1622 +,Zr(NEtMe)4,NH3,Si,150–250,,,,1622 +,Zr(NEt2)4,NH3,Si,150–250,,,,1622 +,Zr(NEt2)4,N2⚡,Si,300,,,,1623 +NbN,,,,Amorphous,Cubic,Hexagonal,, +,NbCl5,NH3,"SLG, SiO2, Al2O3",,400–500,,,"933, 1630, and 1632" +,NbCl5,NH3,"SLG, borosilicate",250–300,,,,1631 +,NbCl5,NH3-Zn,SLG,,500,500,,935 and 1630 +,NbCl5,DMHy,SLG,,400,,,966 +MoN,,,,Amorphous,Cubic,Hexagonal,Tetragonal, +,MoCl5,NH3,"SLG, Si",,350–500,450–500,,933 and 1635 +,MoCl5,NH3-Zn,SLG,,500,500,,966 +,MoCl5,DMHy,SLG,,500,500,,966 +,Mo(tBuN)2(NMe2)2,NH3,"Si, SiO2, Ni, Cr",260–300,,,260–300,1636 +,Mo(tBuN)2(NEt2)2,NH3,Si,285–300,,,285–300,1638 +InN,,,,Amorphous,Hexagonal,,, +,In,N2☼,Sapphiree,,440,,,1762 +,InMe2Et,NH3,AlNe,,480,,,485 +,InMe2Et,NH3,AlN,,480,,,485 +HfNx,,,,Amorphous,Cubic,,, +,Hf(NMe2)4,NH3,Si,150–250,,,,1622 +,Hf(NEtMe)4,NH3,"Si, Ge",150–250,,,,501 and 1622 +,Hf(NEtMe)4,H2⚡,SiO2,,250,,,2118 +,Hf(NEt2)4,NH3,Si,150–250,,,,1622 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_050_table_035/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_050_table_035/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..014cebb3c0318c3fae7edc8408226045ccd95946 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_050_table_035/gold.csv @@ -0,0 +1,32 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,,,References +TaNx,,,,Amorphous,Cubic,Orthorhombic,, +,TaCl5,NH3,SLG,,500,,,933 +,TaCl5,NH3,"SLG, SiLK",300–500,,400–500,,2160 and 2161 +,TaCl5,NH3-Zn,SLG,,400–500,,,2160 +,TaCl5,DMHy,SLG,300–400,,,,966 +,TaCl5,tBuNH2,SLG,350,400–500,,,2163 +,TaCl5,tBuNH2+NH3,SLG,,400–500,,,2163 +,TaCl5,H2+N2⚡,"H-Si, SiO2",,100–400,,,2164 and 2166 +,TaCl5·SEt2,NH3 - AlMe3,Si,,400–500,,,2169 +,TaBr5,tBuNH2,SLG,400,450–500,,,2163 +,TaBr5,tBuNH2+NH3,SLG,,400–500,,,2163 +,TaF5,H2+N2⚡,SiO2,,350,350,,2170 +,TaF5,H2⚡-NH3,SiO2,,200–350,,,2125–2127 +,TaF5,H2+NH3⚡,SiO2,,200,200,,2127 +,Ta(NMe2)5,H2⚡,"H-Si, SiO2, Si",,150–250,,,"964, 2152, 2182, and 2183" +,Ta(NMe2)5,N2+H2⚡,"H-Si, SiO2",250,,150–250,,2182 and 2183 +,Ta(NEtMe)5,NH3,"H-Si, SiO2",220–250,250,,,2184 +,Ta(iPrN)(NEtMe)3,N2+H2⚡,SiO2,400,,,,2185 +,Ta(tBuN)(NEt2)3,NH3,"SiO2, Si",150–260,350–400,,,"2187, 2188, 2192, and 2198" +,Ta(tBuN)(NEt2)3,N2H4,Si,150–250,,,,2188 +,Ta(tBuN)(NEt2)3,H2⚡,"SiO2, Si",250–350,250–350,,,"1669, 2191, 2192, and 2195" +,Ta(tBuN)(NEt2)3,NH3⚡,SiO2,250,350–400,,,2198 +,Ta(tAmN)(NMe2)3,H2⚡,SiO2,,230,,,1671 +WNx,,,,Amorphous,Cubic W2N,Hexagonal WN,, +,WF6,NH3,Si,,327,,,2224 +,WF6,"NH3(ethene, silane cat.)",Si,,350,350,,2225 +,WF6,NH3,SiO2,,350,,,944 +,WF6,NH3+B2H6,SiO2,300,300,300,,2356 +,WF6,NH3+B2H6,SiO2,,200–350,200–350,,2230 +,W(tBuN)2(NMe2)2,NH3,"Si, SiO2, Ni, Cr",250–380,,,,"1067, 1689, and 2231" +,W2(NMe2)6,NH3,Si,180–210,,,,2235 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_051_table_036/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_051_table_036/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..42f76b44da9d2e3b70e16ec8a28aec574f2b9313 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_051_table_036/gold.csv @@ -0,0 +1,53 @@ +ALD,,Film type,GPC,N:Ti,"Impurities, at-%",,,,Density,Ref. +,°C,,nm,,C,H,O,Cl (I),gcm-3, +Halide reactants,,,,,,,,,, +Thermal ALD,,,,,,,,,, +TiCl4–NH3,,,,,,,,,, +,300,Cryst.,0.03,–,–,–,–,7.7,–,955 +,350,Cryst.,0.04,0.9,~0,–,~0,2.5,4.2,938 +,400,Cryst.,0.017,–,–,–,< d.l.,1.2,–,944 +,400,Cryst.,0.017,1.16,~0,–,~0,1.2,~5.4,950 +,400,Cryst.,0.04,0.9,~0,–,~0,0.5,4.7,938 +,450,Cryst.,0.03,–,–,–,–,1.8,–,955 +,450,Cryst.,0.04,0.9,~0,–,~0,0.3,4.9,938 +,500,Cryst.,0.02,–,–,<0.4,–,<0.5,–,934 +,500,Cryst.,0.02,0.9,~0,–,~15,<0.05,–,935 +,500,Cryst.,0.03,–,–,–,–,1.0,–,955 +TiI4–NH3,,,,,,,,,, +,400,Cryst.,0.012,0.5,–,–,~30,<0.5 (I),–,968 +,500,Cryst.,0.03,0.8,–,–,~10,<0.5 (I),–,968 +TiCl4–allylNH2,,,,,,,,,, +,400,Amorph.,0.015,0.7,9,≳ 3,≳ 13,7,–,967 +TiCl4–DMHy,,,,,,,,,, +,250,Amorph.,0.022,–,–,–,–,18,–,966 +,300,W. cryst.,0.022,–,6,2,–,7,–,966 +,400,W. cryst.,0.026,1.0,13,2,14,2,–,966 +Plasma ALD,,,,,,,,,, +"TiCl4–N, H plasma",,,,,,,,,, +,100,Cryst.,0.026,1.1,–,16,2.6,2.1,3.9,960 +,200,Cryst.,0.027,1.0,–,–,1.4,0.96,–,960 +,300,Cryst.,0.036,1.1,–,–,2.8,0.42,–,960 +,320,Cryst.,0.030,1,~0,–,~0,~1.0,4.9,950 +,400,Cryst.,0.050,1.0,–,3,1.8,0.07,4.8,960 +Alkylamide reactants,,,,,,,,,, +Thermal ALD,,,,,,,,,, +Ti(NMe2)4–NH3,,,,,,,,,, +,150,Amorph.,0.3,1.0,21,–,20,–,–,975 +,180,Amorph.,0.2,–,10,–,20,–,–,973 +,180,W. cryst.,0.7,0.9,6,–,37,–,3.1,980 +,200,Amorph.,0.5,1.0,20,–,20,–,–,975 +,200,–,0.06,0.5,9,–,37,–,–,986 +,240,W. cryst.,1–11,0.8,7,–,37,–,3.0,976 +,350,W. cryst.,7.6,1.0,45,–,7,–,–,975 +Ti(NEtMe)4–NH3,,,,,,,,,, +,200,Amorph.,0.5,0.6,4,6,–,–,–,996 +Plasma ALD,,,,,,,,,, +Ti(NMe2)4–H2 plasma,,,,,,,,,, +,150,Cryst.,0.035,0.7,11,–,0,–,4.1,995 +,250,Amorph.,–,1,<5,–,25,–,–,989 +Ti(NMe2)4–N2 plasma,,,,,,,,,, +,250,Amorph.,–,1.3,4.5,–,10,–,–,989 +Ti(NMe2)4–NH3 plasma,,,,,,,,,, +,200,–,0.08,0.9,1,–,5,–,–,986 +,250,Amorph.,0.2,1.2,<3,–,20,–,–,988 +,250,Amorph.,–,1.1,1,–,20,–,–,989 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_054_table_037/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_054_table_037/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..3d715c2698a8539bed54dc71be5a1c4f9b3e3254 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_054_table_037/gold.csv @@ -0,0 +1,34 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,References +Sulfides,,,,,,, +CaS,,,,Amorphous,Cubic,, +,Ca(thd)2,H2S,"SLG, Al2O3",,325–450,,"675, 676, 678, and 679" +TiS2,,,,Amorphous,Cubic,Hexagonal, +,TiCl4,H2S,Rh,400,,,999 +,TiCl4,H2S,Ru,,400,400,999 +,TiCl4,H2S,"SLG, ZnS, Ir, Pd, Pt, TiN",,,400,999 +CuSx,,,,Amorphous,Pseudocubic,Hexagonal, +,Cu(thd)2,H2S,"Si, SLG",,,120–160,1144 +,Cu(thd)2,H2S,"Corning 7059, SnO2:F, TiO2",,175–280,125–175,1145 and 1146 +,Cu(sBuAMD)2,H2S,Al2O3,130,,130,1147 +ZnS,,,,Amorphous,Cubic,Hexagonal, +,Zn,S,GaAse,,140–340,,1288 +,Zn,H2S,GaPe,,420–600,,1289 +,ZnCl2,H2S,GaAse,,510,,1300 and 1301 +,ZnCl2,H2S,"glass, SLG, phlogopite, ITO, silica, Al2O3",,,390–500,"84, 1290–1292, 1295, 1297–1299, 1302, 1304, and 2134" +,ZnCl2,H2S,Al2O3,,360–500,360–400,1304 +,ZnI2,H2S,Al2O3,,300–490,300–490,1305 +,ZnMe2,H2S,GaAse,,150–310,,1308 and 1311 +,ZnMe2,H2S,H-Sie,,125–175,,1313 and 1314 +,ZnMe2,H2S,"Si, Corning 7059",,25–500,25–500,1306 +,ZnMe2,H2S,Corning 7059,,200–340,,1309 +,ZnEt2,H2S,glass,,120,120,1194 +,ZnEt2,H2S,"AlxTiyOz, Al2O3",,250–400,350–400,1317 and 1318 +,ZnEt2,H2S,H-Si,,,110,1215 +,ZnEt2,H2S,Si,,100–400,300–400,1320 +,Zn(CH3COO)2,H2S,"SLG, ITO",,290–390,,"1292, 1295, and 1297" +,Zn(CH3COO)2,H2S,"SLG, Al2O3",,290–360,290–360,"1279, 1304, and 1322" +,Zn(OAc)2,H2S,Al2O3,,250–350,250–350,1304 +SrS,,,,Amorphous,Cubic,, +,Sr(iPr3Cp)2,H2S,Al2O3,,260–400,,1509 +,Sr(Me5Cp)2,H2S,Al2O3,,280–350,,1509 +,Sr(thd)2,H2S,"Al2O3, SLG",,350–450,,675 and 1512 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_055_table_038/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_055_table_038/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..eaa0ed9630d8a8d670dc5ac54ab7394a160f4164 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_055_table_038/gold.csv @@ -0,0 +1,35 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,References +CdS,,,,Amorphous,Cubic,Hexagonal, +,Cd,S,GaAse,,340,,1707 +,CdCl2,H2S,GaAse,,510,,1300 +,CdCl2,H2S,ZnS,,510,,1300 +,CdMe2,H2S,ZnSee,,RT,,"1709, 1710, and 1713" +,CdMe2,H2S,"Si, glass",,100–400,100–400,1714 +In2S3,,,,Amorphous,Tetragonal,, +,InCl3,H2S,SLG,,300–400,,1763 +,In(acac)3,H2S,ZnO,160,,,1178 +,In(acac)3,H2S,glass,,130–160,,"1766, 1767, and 1772" +,In(acac)3,H2S,"Si, Cu(In,Ga)Se2, SLG, Corning 7059",,140–260,,"1768, 1769, and 1771" +Sb2S3,,,,Amorphous,Orthorhombic,, +,Sb(NMe2)3,H2S,Si,120,,,1829 +,Sb(NMe2)3,H2S,Sb2S3e,,65–160,,2366 +,Sb(NMe2)3,H2S,Sb2Se3e,,90–160,,2366 +BaS,,,,Amorphous,Cubic,, +,Ba(Me5Cp)2,H2S,Al2O3,,240–300,,1509 +,Ba(thd)2,H2S,"Al2O3, SLG",,300–450,,675 and 1831 +La2S3,,,,Amorphous,Cubic,, +,La(thd)3,H2S,"SLG, Corning 7059",300–400,500,,1857 +WS2,,,,Amorphous,Hexagonal,, +,WF6,H2S,ZnS,,300,,2238 +,WF6,H2S(ZnEt2 cat.),ZnS,,300–350,,2239 +PbS,,,,Amorphous,Cubic,, +,Pb(detc)2,H2S,"glass, Al2O3, BaF2",,300–350,,2277 +,Pb(thd)2,H2S,Si,,160,,2279 +Selenides,,,,,,, +ZnSe,,,,Amorphous,Cubic,, +,Zn,Se,GaAs,,200–430,,"1323, 1327, 1331, and 1335–1337" +,Zn,Se,GaAse,,350–410,,1339 +,Zn,Se,ZnTee,,200–400,,"1323, 1325, and 1327" +,ZnMe2,H2Se,H-Sie,,125–250,,"1313, 1314, 1352, and 1354" +,ZnMe2,H2Se,GaAse,,100–200,,1350 and 1352 +,ZnCl2,H2Se,GaAs,,400–500,,1342–1344 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_056_table_039/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_056_table_039/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..490dbb49f600c8129a0f50a62c9a204e01ae640a --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_056_table_039/gold.csv @@ -0,0 +1,25 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,References +CdSe,,,,Amorphous,Cubic,, +,Cd,Se,ZnSe,,230–300,,"1715, 1717, 1718, and 1720" +,Cd,Se,GaAse,,350–410,,1722 +Tellurides,,,,,,, +MgTe,,,,Amorphous,Cubic,, +,Mg,Te,CdTe,,260–300,,69 and 70 +ZnTe,,,,Amorphous,Cubic,, +,Zn,Te,GaAs,,200–400,,"1323, 1327, and 1359" +,Zn,Te,GaAse,,380–390,,1363 and 1365 +,Zn,Te,ZnSee,,200–400,,1323 and 1327 +,Zn,Te,CdTee,,225–250,,1361 +,Zn,Te,ZnTee,,280,,1362 +GeTe,,,,Amorphous,Rhombohedral,, +,GeCl2 · C4H8O2,(Et3Si)2Te,Si,,90,,1148 +CdTe,,,,Amorphous,Cubic,, +,Cd,Te,"CdTee,BaF2e, GaAse",,260–290,,"70, 1043, 1046, 1723, 1724, 1726, 1730, and 1731" +,Cd,Te,ZnSe,,230–300,,1720 +,CdMe2,TeEt2,"GaAse, Si",,250–320,,1367 and 1749 +,CdMe2,TeMe(allyl),"GaAse, Si",,250–320,,1367 and 1748–1750 +SbxTey,,,,Amorphous,Rhombohed-ral Sb2Te3,Sb-like rhombohedral, +,SbCl3,(Et3Si)2Te,Si,,60,,1148 +,SbCl3,(Et3Si)2Te-(Et3Si)2Sb,Si,,,95,534 +HgTe,,,,Amorphous,Cubic,, +,HgMe2,TeMe(allyl),"GaAse, Si",,140,,1748 and 1750 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_059_table_040/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_059_table_040/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..588d01ec46c3395ad9f181bf3b156dee0061e651 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_059_table_040/gold.csv @@ -0,0 +1,56 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References +Al,,,,Amorphous,Crystalline, +,AlMe3,H2⚡,"Si, SiO2, TiN",,250,71 and 72 +Si,,,,,, +,Si2Cl6,Si2H6,Ge(100)e,,465,548 +,SiCl2H2,H2⚡,Ge(100)e,,465,548 +,SiCl2H2,H2,H-Si(100)e,,815-825,542 and 543 +,SiCl2H2,H2,H-Si(111)e,,890-910,543 +Fe,,,,,, +,Fe(tBuNCMeNtBu)2,H2,"SiO2, glass",,250,1053 +Co,,,,,, +,Co(iPrNCMeNiPr)2,H2,"SiO2, glass",,350,1053 +,Co(iPrNCMeNiPr)2,H2,"SiO2, WN",,300,1067 +,CoCp2,NH3⚡,Si,,300,1071 +,CoCp(CO)2,NH3⚡,"SiO2, Si",,250–400,1073 +,CoCp(CO)2,H2⚡,H-Si,,125–175,1076 +,Co2(CO)8,H2⚡,H-Si,75–110,,1077 +Ni,,,,,, +,Ni(iPrNCMeNiPr)2,H2,"SiO2, glass",,250,1053 +,Ni(acac)2,H2,"Ti, Al, Si",,250,1092 +,Ni(hfip)2,H2,H-Si,,225,1094 +Cu,,,,,, +,CuCl,H2+H2O,Al2O3,,425,1114 +,CuCl,H2-H2O,"Al2O3, SiO2",,375–475,1113 and 1114 +,CuCl,H2-H2O,Al2O3e,,400,2374 +,CuCl,Zn,Al2O3,,500,1115 +,Cu(hfac)2,NH3-H2O,SiO2,,283–302,1141 +,Cu(hfac)2·XH2O,formalin,"TiN, TaN, Ta",,300,1124 +,Cu(hfac)2+H2+H2O,MeOH,"TiN, TaN, Cu, Ta, glass",,300,1138 +,Cu(hfac)2+H2+H2O,EtOH,"TiN, TaN, Cu, Ta, glass",,300,1138 +,Cu(hfac)2+H2+H2O,iPrOH,"TiN, TaN, Cu, Ta, glass",,300,1138 +,Cu(hfac)2+H2+H2O,formalin,"TiN, TaN, Cu, Ta, glass",,300,1138 +,Cu(hfac)2+H2+H2O,CO,"TiN, TaN, Cu, Ta, glass",,300,1138 +,Cu(hfac)(vtmos),H2 ⚡,TiN,,200–300,1126 +,Cu(acac)2,H2,"Ti, Al, glass",,250,1092 +,Cu(acac)2,H2⚡,"Si, glass",,140,1116 +,Cu(thd)2,H2,"SLG-Pt/Pd, SiO2, glass",,190–350,"1119, 1120, and 1122" +,Cu(thd)2,H2⚡,"Au, TaNx, SiO2",,90–250,1123 +,Cu(dmap)2,ZnEt2,Si,,100–120,1132 +,[Cu(iPrNCMeNiPr)]2,H2,"SiO2, glass, Co, WN",,190–280,1053 and 1067 +,[Cu(sBuNCMeNsBu)]2,H2,"Al2O3, SiO2, Si3N4, glass, Ru, Co, Cu, WN",,150–190,1127 +Zn,,,,,, +,ZnEt2,H2O,silica,,200,1149 +Ge,,,,,, +,GeMe2H2,H2⚡,SiO2e,,480,1494 +Mo,,,,,, +,MoCl5,Zn,"Al2O3, SLG",,400–500,1634 +Ru,,,,,, +,Ru(chd)(ipmp),O2,SiO2,,220,1641 +,Ru(Cp)2,O2,"Al2O3, TiO2, SiO2, HfO2, HfSiOx, Ta2O5, carbon aerogel",,275–400,"1643, 1646, 1647, and 1650" +,Ru(Cp)2,NH3⚡,"TaNx, Ta2O5, H-Si, SiO2",,300,1649 +,Ru(EtCp)2,O2,"Si, SiO2, TiN, Ta2O5",,270–300,"1652, 1654, and 1687" +,Ru(EtCp)2,NH3⚡,"TaN,Si",290,,1669 +,Ru(EtCp)2,NH3⚡,"TiN, TaNx, Ta2O5, H-Si, SiO2, Si",100–200,270–350,"1650, 1661, 1662, 1666, and 1670" +,Ru(EtCp)2,H2⚡-O2,TiO2,,300,900 +,Ru(EtCp)2,H2+N2⚡,"O-Si, SiO2",,200–230,994 and 1671 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_060_table_041/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_060_table_041/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..1cd72bc189aa5dcaaae55ebb34dbca6a32b30296 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_060_table_041/gold.csv @@ -0,0 +1,38 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References +,Ru(EtCp)(dmp),O2,"Si, Au, Pt, Al2O3, SiO2, TiO2, TiN",,230–290,"906, 1672, 1673, and 1677" +,RuCp(CpCH(Me)(NMe2)),O2,Al2O3,,325–500,1680 +,Ru(thd)3,O2,Al2O3,,325–400,1685 and 1686 +,Ru(tBuAMD)2(CO)2,O2,O-Si,,300–400,1688 +,Ru(tBuAMD)2(CO)2,NH3,WN,,250–300,1689 +Rh,,,,,, +,Rh(acac)3,O2,Al2O3,,250,1694 +Pd,,,,,, +,Pd(hfac)2,formalin,Al2O3,,200,1702 +,Pd(hfac)2,H2,"Ir, TaN",,80–130,1696 and 1697 +,Pd(hfac)2,HCOCOOH,tetrasulfide SAM,,200,1696 +,Pd(thd)2,H2,"Al2O3, SiO2",,180,1684 +,Pd(thd)2,H2⚡,"Ir, W, Si",80,,2375 +Ag,,,,,, +,Ag(O2CtBu)(PEt3),H2⚡,"Si, glass",,140,1705 +,Ag(hfac)(cod),propanol,glass,,110–150,1811 +Sb,,,,,, +,SbCl3,(Et3Si)3Sb,"Si, SLG",,95–250,534 +Ta,,,,,, +,TaCl5,H2⚡,"Si, SiO2",25–400,400,"685, 2124, and 2165" +,TaF5,H2⚡,SiO2,,200–350,2125–2127 +W,,,,,, +,WF6,Si2H6,Si,,327,2208 +,WF6,Si2H6,Al2O3,,122–177,187 and 309 +,WF6,SiH4,"TiN, SiO2",,300,2201 and 2202 +,WF6,B2H6,TiN,300,,2202 +Ir,,,,,, +,Ir(acac)3,O2,"Al2O3, TiO2, SS",,225–375,"276, 832, 2240, and 2243" +,Ir(acac)3,O3,"Si, SLG, Al2O3",,200–225,2252 +,Ir(acac)3,O3 - H2,Al2O3,,165–200,2246 +,Ir(EtCp)(cod),O2,"SiO2, TiN",,270–290,2248 and 2249 +,Ir(EtCp)(cod),NH3⚡,TiN,,270,2249 +,Ir(MeCp)(chd),O2,Al2O3,,225–350,2250 +Pt,,,,,, +,Pt(MeCp)Me3,O2,"Al2O3, Ir, Si, SiO2, ZrO2, SrTiO3, SnO2, borosilicate",,200–300,"295, 1644, 2243, 2253, 2255, 2260, 2262, and 2270" +,Pt(MeCp)Me3,O2⚡,"Si, SiO2",,300,2260 +,Pt(acac)Me2,O3,Al2O3,,140–200,2273 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_061_table_042/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_061_table_042/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..c3bea19951db4ccaa19837013b0071958ce9db8f --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_061_table_042/gold.csv @@ -0,0 +1,50 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References +Phosphides,,,,,, +GaP,,,,Amorphous,Cubic, +,GaMe3,PH3,"GaPe, GaAse",,500,1394 +,GaMe3,PH3,Sie,,450–600,516 and 1392 +,GaMe3,P(NMe2)3,SiO2,,450,1395 +InP,,,,Amorphous,Cubic, +,InMe3,PH3,GaAse,,420–580,1773 +,InMe3,PH3,InPe,,350–360,1775 and 1776 +Arsenides,,,,,, +AlAs,,,,Amorphous,Cubic, +,AlMe3,AsH3,H-Sie,,500,513 +,AlMe2H,AsH3,GaAse,,470,520 +,AlMe2H,AsH3-NMe2H,GaAse,,460,522 +,AlMe3,AsH3,H-Sie,,500,516 and 1426 +,AlMe3,AsH3,Ase,,500–850,516 +,(Me3N)·AlH3,As(NMe2)3,GaAse,,310–400,527 +,(Me3N)·AlH3,AsH3,"As-Si, GaAse",,150,525 +,(Me2EtN)·AlH3,AsH3,GaAse,,250–650,528–532 +MnAs,,,,Amorphous,Hexagonal, +,Mn(CpMe)2,As(NMe2)3,GaAse,,350–500,1052 +GaAs,,,,Amorphous,Cubic, +,Ga+HCl,AsH3,GaAse,,350–550,"1397, 1399, and 1411" +,GaCl3,AsH3,GaAse,,300–450,1413 and 1414 +,GaCl3,AsH3,GaAs,,200–250,1413 and 1414 +,GaMe3,AsH3,GaAse,,450–700,"1417, 1420, 1433, and 1438" +,GaMe3,AsH3,silica,,400,1467 +,GaMe3,AsH3,H-Si,,500,"516, 1426, 1439, and 1463" +,GaMe3,AsH3,InAse,,500,1394 +,GaMe3,AsH3-H2⚡,GaAs,,430–500,1441 +,GaMe3,AsH3,GaPe,,500,516 +,GaMe3,tBuAsH2,GaAse,,500–580,1470 and 1474 +,GaMe3,EtAsH2,GaAse,,500–540,1468 +,GaMe3,As,GaAse,,370–530,1434 +,GaMe3☼,AsH3,GaAse,,370–430,514 +,GaEt3,AsH3,GaAse,,385,1438 +,GaEt3,tBuAsH2,GaAse,,550,1486 +,GaEt3,As(NMe2)3,GaAse,,440–495,527 +,GaEt3☼,AsH3,GaAse,,370–430,514 +,GaEt2Cl,AsH3,GaAse,,450–525,1490 +,Ga(C5H11)3,tBuAsH2,GaAse,,430–500,1491 +InAs,,,,Amorphous,Cubic, +,In+HCl,AsH3,GaAse,,350–550,1399 and 1411 +,InMe3,tBuAsH2,InPe,,350–410,"1775, 1776, 1788, and 1789" +,InMe3,AsH3,InAse,,360–420,1394 +Antimonides,,,,,, +AlSb,,,,Amorphous,Cubic, +,AlCl3,(Et3Si)3Sb,"Si, SLG",,300,534 +GaSb,,,,Amorphous,Cubic, +,GaCl3,(Et3Si)3Sb,"Si, SLG",150,,534 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_062_table_043/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_062_table_043/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..d116856c88a394c1445ccdbd107b2cbff5218285 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_062_table_043/gold.csv @@ -0,0 +1,3 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References +GeSb,,,,Amorphous,Cubic, +,GeCl2 · (C4H8O2)-SbCl3,(Et3Si)3Sb,"Si, SLG",95,,534 diff --git a/Miikkulainen_2013/step2_table_reconstruction/tables/page_062_table_044/gold.csv b/Miikkulainen_2013/step2_table_reconstruction/tables/page_062_table_044/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..5685232d9551311db5cb24c11e4bf7660c23c119 --- /dev/null +++ b/Miikkulainen_2013/step2_table_reconstruction/tables/page_062_table_044/gold.csv @@ -0,0 +1,15 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References +MgF2,,,,Amorphous,Tetragonal, +,Mg(thd)2,TiF4,Si,,250–400,66 and 67 +CaF2,,,,Amorphous,Cubic, +,Ca(thd)2,HF,Al2O3,,320,680 +,Ca(thd)2,TiF4,Si,,300–450,67 and 681 +,Ca(thd)2,TaF5,Si,,225–400,68 +ZnF2,,,,Amorphous,Rutile, +,Zn(CH3COO)2,HF,Al2O3,,300,680 +SrF2,,,,Amorphous,Rutile, +,Sr(thd)2,HF,Al2O3,,350,680 +YF3,,,,Amorphous,Orthorhombic, +,Y(thd)3,TiF4,Si,175–200,225–325,1534 +LaF3,,,,Amorphous,Hexagonal, +,La(thd)3,TiF4,Si,,225–250,1858 diff --git a/Miikkulainen_2013/step3_reference_table_classification/gold.json b/Miikkulainen_2013/step3_reference_table_classification/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..c20e11ab23931e5dba2af0e7dfc83e70c5924212 --- /dev/null +++ b/Miikkulainen_2013/step3_reference_table_classification/gold.json @@ -0,0 +1,326 @@ +{ + "schema_version": 1, + "task": "step3_reference_table_classification", + "paper_id": "P251", + "public_id": "Miikkulainen_2013", + "gold_type": "controlled_gold", + "label_definition": { + "reference_table": "Table contains an explicit reference column usable for citation-to-bibliography matching.", + "non_reference_table": "Curated table does not contain an explicit reference column." + }, + "summary": { + "tables": 44, + "positive": 44, + "negative": 0 + }, + "tables": [ + { + "table_id": "page_006_table_001", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_006_table_001/gold.csv" + }, + { + "table_id": "page_007_table_002", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_007_table_002/gold.csv" + }, + { + "table_id": "page_008_table_003", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_008_table_003/gold.csv" + }, + { + "table_id": "page_009_table_004", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_009_table_004/gold.csv" + }, + { + "table_id": "page_010_table_005", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_010_table_005/gold.csv" + }, + { + "table_id": "page_011_table_006", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_011_table_006/gold.csv" + }, + { + "table_id": "page_012_table_007", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_012_table_007/gold.csv" + }, + { + "table_id": "page_013_table_008", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_013_table_008/gold.csv" + }, + { + "table_id": "page_014_table_009", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_014_table_009/gold.csv" + }, + { + "table_id": "page_015_table_010", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_015_table_010/gold.csv" + }, + { + "table_id": "page_016_table_011", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_016_table_011/gold.csv" + }, + { + "table_id": "page_017_table_012", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_017_table_012/gold.csv" + }, + { + "table_id": "page_018_table_013", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_018_table_013/gold.csv" + }, + { + "table_id": "page_019_table_014", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_019_table_014/gold.csv" + }, + { + "table_id": "page_020_table_015", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_020_table_015/gold.csv" + }, + { + "table_id": "page_021_table_016", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_021_table_016/gold.csv" + }, + { + "table_id": "page_022_table_017", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_022_table_017/gold.csv" + }, + { + "table_id": "page_026_table_018", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_026_table_018/gold.csv" + }, + { + "table_id": "page_028_table_019", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_028_table_019/gold.csv" + }, + { + "table_id": "page_029_table_020", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_029_table_020/gold.csv" + }, + { + "table_id": "page_030_table_021", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_030_table_021/gold.csv" + }, + { + "table_id": "page_031_table_022", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_031_table_022/gold.csv" + }, + { + "table_id": "page_032_table_023", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_032_table_023/gold.csv" + }, + { + "table_id": "page_033_table_024", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_033_table_024/gold.csv" + }, + { + "table_id": "page_034_table_025", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_034_table_025/gold.csv" + }, + { + "table_id": "page_035_table_026", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_035_table_026/gold.csv" + }, + { + "table_id": "page_036_table_027", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_036_table_027/gold.csv" + }, + { + "table_id": "page_037_table_028", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_037_table_028/gold.csv" + }, + { + "table_id": "page_038_table_029", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_038_table_029/gold.csv" + }, + { + "table_id": "page_039_table_030", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_039_table_030/gold.csv" + }, + { + "table_id": "page_040_table_031", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_040_table_031/gold.csv" + }, + { + "table_id": "page_041_table_032", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_041_table_032/gold.csv" + }, + { + "table_id": "page_048_table_033", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_048_table_033/gold.csv" + }, + { + "table_id": "page_049_table_034", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_049_table_034/gold.csv" + }, + { + "table_id": "page_050_table_035", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_050_table_035/gold.csv" + }, + { + "table_id": "page_051_table_036", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_051_table_036/gold.csv" + }, + { + "table_id": "page_054_table_037", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_054_table_037/gold.csv" + }, + { + "table_id": "page_055_table_038", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_055_table_038/gold.csv" + }, + { + "table_id": "page_056_table_039", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_056_table_039/gold.csv" + }, + { + "table_id": "page_059_table_040", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_059_table_040/gold.csv" + }, + { + "table_id": "page_060_table_041", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_060_table_041/gold.csv" + }, + { + "table_id": "page_061_table_042", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_061_table_042/gold.csv" + }, + { + "table_id": "page_062_table_043", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_062_table_043/gold.csv" + }, + { + "table_id": "page_062_table_044", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_062_table_044/gold.csv" + } + ] +} diff --git a/Miikkulainen_2013/step4_bibliography/gold.json b/Miikkulainen_2013/step4_bibliography/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..7e3af2a78418aa4e0bd735206f2eed2a7106d224 --- /dev/null +++ b/Miikkulainen_2013/step4_bibliography/gold.json @@ -0,0 +1,9558 @@ +[ + { + "nr": "1", + "ref": "T. 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Eng. 84, 2460 (2007)." + } +] diff --git a/Miikkulainen_2013/step5_reference_matching/gold.json b/Miikkulainen_2013/step5_reference_matching/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..8791150c21616590e3781f04686944767b048de6 --- /dev/null +++ b/Miikkulainen_2013/step5_reference_matching/gold.json @@ -0,0 +1,15156 @@ +{ + "schema_version": 1, + "task": "step5_reference_matching", + "paper_id": "P251", + "gold_type": "derived_controlled_gold", + "scope": "Explicit numeric bibliography-reference expressions occurring in explicit reference columns of expert-curated gold tables.", + "semantics": { + "row_index": "Zero-based row index in gold.csv, including the header row.", + "column_index": "Zero-based column index in gold.csv.", + "bibliography_index": "The nr value in bibliography/gold.json." + }, + "construction": { + "table_source": "../step2_table_reconstruction/tables/*/gold.csv", + "bibliography_source": "bibliography/gold.json", + "reference_column_rule": "The column header must explicitly be Ref, Refs, Reference, References, Citation(s), Literature, or Source(s).", + "citation_rule": "Only whole-cell numeric bibliography expressions, including lists and ranges, are annotated. Numeric markers embedded inside non-reference content are excluded.", + "excluded_example": "Table-footnote syntax such as mark[1] is not a bibliography citation." + }, + "summary": { + "source_physical_tables": 44, + "tables_with_explicit_reference_column": 44, + "tables_without_explicit_reference_column": 0, + "citation_cells": 1478, + "bibliography_links": 4384, + "bibliography_entries": 2389 + }, + "tables": [ + { + "table_id": 1, + "table_key": "page_006_table_001", + "gold_csv": "../step2_table_reconstruction/tables/page_006_table_001/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "44", + "bibliography_indices": [ + 44 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "45", + "bibliography_indices": [ + 45 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "46 and 47", + "bibliography_indices": [ + 46, + 47 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "48", + "bibliography_indices": [ + 48 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "49 and 50", + "bibliography_indices": [ + 49, + 50 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "50", + "bibliography_indices": [ + 50 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "51 and 52", + "bibliography_indices": [ + 51, + 52 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "53", + "bibliography_indices": [ + 53 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "54", + "bibliography_indices": [ + 54 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "55–62", + "bibliography_indices": [ + 55, + 56, + 57, + 58, + 59, + 60, + 61, + 62 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "63", + "bibliography_indices": [ + 63 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "64", + "bibliography_indices": [ + 64 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "65", + "bibliography_indices": [ + 65 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "66 and 67", + "bibliography_indices": [ + 66, + 67 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "68", + "bibliography_indices": [ + 68 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "69 and 70", + "bibliography_indices": [ + 69, + 70 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "71 and 72", + "bibliography_indices": [ + 71, + 72 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "73–98", + "bibliography_indices": [ + 73, + 74, + 75, + 76, + 77, + 78, + 79, + 80, + 81, + 82, + 83, + 84, + 85, + 86, + 87, + 88, + 89, + 90, + 91, + 92, + 93, + 94, + 95, + 96, + 97, + 98 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "99", + "bibliography_indices": [ + 99 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "100 and 101", + "bibliography_indices": [ + 100, + 101 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "80, 88, and 102", + "bibliography_indices": [ + 80, + 88, + 102 + ] + } + ] + }, + { + "table_id": 2, + "table_key": "page_007_table_002", + "gold_csv": "../step2_table_reconstruction/tables/page_007_table_002/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "103 and 104", + "bibliography_indices": [ + 103, + 104 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "105", + "bibliography_indices": [ + 105 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "41, 59, 86, 94, 95, 98, and 106–396", + "bibliography_indices": [ + 41, + 59, + 86, + 94, + 95, + 98, + 106, + 107, + 108, + 109, + 110, + 111, + 112, + 113, + 114, + 115, + 116, + 117, + 118, + 119, + 120, + 121, + 122, + 123, + 124, + 125, + 126, + 127, + 128, + 129, + 130, + 131, + 132, + 133, + 134, + 135, + 136, + 137, + 138, + 139, + 140, + 141, + 142, + 143, + 144, + 145, + 146, + 147, + 148, + 149, + 150, + 151, + 152, + 153, + 154, + 155, + 156, + 157, + 158, + 159, + 160, + 161, + 162, + 163, + 164, + 165, + 166, + 167, + 168, + 169, + 170, + 171, + 172, + 173, + 174, + 175, + 176, + 177, + 178, + 179, + 180, + 181, + 182, + 183, + 184, + 185, + 186, + 187, + 188, + 189, + 190, + 191, + 192, + 193, + 194, + 195, + 196, + 197, + 198, + 199, + 200, + 201, + 202, + 203, + 204, + 205, + 206, + 207, + 208, + 209, + 210, + 211, + 212, + 213, + 214, + 215, + 216, + 217, + 218, + 219, + 220, + 221, + 222, + 223, + 224, + 225, + 226, + 227, + 228, + 229, + 230, + 231, + 232, + 233, + 234, + 235, + 236, + 237, + 238, + 239, + 240, + 241, + 242, + 243, + 244, + 245, + 246, + 247, + 248, + 249, + 250, + 251, + 252, + 253, + 254, + 255, + 256, + 257, + 258, + 259, + 260, + 261, + 262, + 263, + 264, + 265, + 266, + 267, + 268, + 269, + 270, + 271, + 272, + 273, + 274, + 275, + 276, + 277, + 278, + 279, + 280, + 281, + 282, + 283, + 284, + 285, + 286, + 287, + 288, + 289, + 290, + 291, + 292, + 293, + 294, + 295, + 296, + 297, + 298, + 299, + 300, + 301, + 302, + 303, + 304, + 305, + 306, + 307, + 308, + 309, + 310, + 311, + 312, + 313, + 314, + 315, + 316, + 317, + 318, + 319, + 320, + 321, + 322, + 323, + 324, + 325, + 326, + 327, + 328, + 329, + 330, + 331, + 332, + 333, + 334, + 335, + 336, + 337, + 338, + 339, + 340, + 341, + 342, + 343, + 344, + 345, + 346, + 347, + 348, + 349, + 350, + 351, + 352, + 353, + 354, + 355, + 356, + 357, + 358, + 359, + 360, + 361, + 362, + 363, + 364, + 365, + 366, + 367, + 368, + 369, + 370, + 371, + 372, + 373, + 374, + 375, + 376, + 377, + 378, + 379, + 380, + 381, + 382, + 383, + 384, + 385, + 386, + 387, + 388, + 389, + 390, + 391, + 392, + 393, + 394, + 395, + 396 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "397 and 398", + "bibliography_indices": [ + 397, + 398 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "325 and 399–407", + "bibliography_indices": [ + 325, + 399, + 400, + 401, + 402, + 403, + 404, + 405, + 406, + 407 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "152, 160, 161, 186, 199, 216, 236, 267, 270, 333, 380, 381, and 408–428", + "bibliography_indices": [ + 152, + 160, + 161, + 186, + 199, + 216, + 236, + 267, + 270, + 333, + 380, + 381, + 408, + 409, + 410, + 411, + 412, + 413, + 414, + 415, + 416, + 417, + 418, + 419, + 420, + 421, + 422, + 423, + 424, + 425, + 426, + 427, + 428 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "199, 242, 310, 336, 354, 357, 372, 375, 426, and 429–456", + "bibliography_indices": [ + 199, + 242, + 310, + 336, + 354, + 357, + 372, + 375, + 426, + 429, + 430, + 431, + 432, + 433, + 434, + 435, + 436, + 437, + 438, + 439, + 440, + 441, + 442, + 443, + 444, + 445, + 446, + 447, + 448, + 449, + 450, + 451, + 452, + 453, + 454, + 455, + 456 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "457", + "bibliography_indices": [ + 457 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "458", + "bibliography_indices": [ + 458 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "402", + "bibliography_indices": [ + 402 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "110", + "bibliography_indices": [ + 110 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "459", + "bibliography_indices": [ + 459 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "460 and 461", + "bibliography_indices": [ + 460, + 461 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "281", + "bibliography_indices": [ + 281 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "462 and 463", + "bibliography_indices": [ + 462, + 463 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "464 and 465", + "bibliography_indices": [ + 464, + 465 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "435", + "bibliography_indices": [ + 435 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "56", + "bibliography_indices": [ + 56 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "80", + "bibliography_indices": [ + 80 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "80", + "bibliography_indices": [ + 80 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "80 and 88", + "bibliography_indices": [ + 80, + 88 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "80", + "bibliography_indices": [ + 80 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "466", + "bibliography_indices": [ + 466 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "467", + "bibliography_indices": [ + 467 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "468–471", + "bibliography_indices": [ + 468, + 469, + 470, + 471 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "472–475", + "bibliography_indices": [ + 472, + 473, + 474, + 475 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "470", + "bibliography_indices": [ + 470 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "476", + "bibliography_indices": [ + 476 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "477 and 478", + "bibliography_indices": [ + 477, + 478 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "479 and 480", + "bibliography_indices": [ + 479, + 480 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "125, 132, 338, 478, and 481–490", + "bibliography_indices": [ + 125, + 132, + 338, + 478, + 481, + 482, + 483, + 484, + 485, + 486, + 487, + 488, + 489, + 490 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "491", + "bibliography_indices": [ + 491 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "492", + "bibliography_indices": [ + 492 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "493", + "bibliography_indices": [ + 493 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "494", + "bibliography_indices": [ + 494 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "495 and 496", + "bibliography_indices": [ + 495, + 496 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "497", + "bibliography_indices": [ + 497 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "498–500", + "bibliography_indices": [ + 498, + 499, + 500 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "501", + "bibliography_indices": [ + 501 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "502–504", + "bibliography_indices": [ + 502, + 503, + 504 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "505", + "bibliography_indices": [ + 505 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "506 and 507", + "bibliography_indices": [ + 506, + 507 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "508–518", + "bibliography_indices": [ + 508, + 509, + 510, + 511, + 512, + 513, + 514, + 515, + 516, + 517, + 518 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "519–523", + "bibliography_indices": [ + 519, + 520, + 521, + 522, + 523 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "512 and 514", + "bibliography_indices": [ + 512, + 514 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "524", + "bibliography_indices": [ + 524 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "525", + "bibliography_indices": [ + 525 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "526 and 527", + "bibliography_indices": [ + 526, + 527 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "523 and 528–533", + "bibliography_indices": [ + 523, + 528, + 529, + 530, + 531, + 532, + 533 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "534", + "bibliography_indices": [ + 534 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "535", + "bibliography_indices": [ + 535 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "43, 536, and 537", + "bibliography_indices": [ + 43, + 536, + 537 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 57, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 58, + "column_index": 4, + "value": "538", + "bibliography_indices": [ + 538 + ] + } + ] + }, + { + "table_id": 3, + "table_key": "page_008_table_003", + "gold_csv": "../step2_table_reconstruction/tables/page_008_table_003/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "539", + "bibliography_indices": [ + 539 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "540", + "bibliography_indices": [ + 540 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "540", + "bibliography_indices": [ + 540 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "541", + "bibliography_indices": [ + 541 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "542 and 543", + "bibliography_indices": [ + 542, + 543 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "544–551", + "bibliography_indices": [ + 544, + 545, + 546, + 547, + 548, + 549, + 550, + 551 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "552–554", + "bibliography_indices": [ + 552, + 553, + 554 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "555", + "bibliography_indices": [ + 555 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "556–558", + "bibliography_indices": [ + 556, + 557, + 558 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "547, 548, 559, and 560", + "bibliography_indices": [ + 547, + 548, + 559, + 560 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "561", + "bibliography_indices": [ + 561 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "562–570", + "bibliography_indices": [ + 562, + 563, + 564, + 565, + 566, + 567, + 568, + 569, + 570 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "571–575", + "bibliography_indices": [ + 571, + 572, + 573, + 574, + 575 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "570 and 576", + "bibliography_indices": [ + 570, + 576 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "577", + "bibliography_indices": [ + 577 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "546 and 578", + "bibliography_indices": [ + 546, + 578 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "74, 111, 130, and 579–587", + "bibliography_indices": [ + 74, + 111, + 130, + 579, + 580, + 581, + 582, + 583, + 584, + 585, + 586, + 587 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "99, 584, and 588–594", + "bibliography_indices": [ + 99, + 584, + 588, + 589, + 590, + 591, + 592, + 593, + 594 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "595", + "bibliography_indices": [ + 595 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "596–598", + "bibliography_indices": [ + 596, + 597, + 598 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "599 and 600", + "bibliography_indices": [ + 599, + 600 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "601", + "bibliography_indices": [ + 601 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "602", + "bibliography_indices": [ + 602 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "603", + "bibliography_indices": [ + 603 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "604 and 605", + "bibliography_indices": [ + 604, + 605 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "433, 606, and 607", + "bibliography_indices": [ + 433, + 606, + 607 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "362 and 608–612", + "bibliography_indices": [ + 362, + 608, + 609, + 610, + 611, + 612 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "613 and 614", + "bibliography_indices": [ + 613, + 614 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "615", + "bibliography_indices": [ + 615 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "616 and 617", + "bibliography_indices": [ + 616, + 617 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "618", + "bibliography_indices": [ + 618 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "619", + "bibliography_indices": [ + 619 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "389", + "bibliography_indices": [ + 389 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "616, 617, and 620–622", + "bibliography_indices": [ + 616, + 617, + 620, + 621, + 622 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "623", + "bibliography_indices": [ + 623 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "623 and 624", + "bibliography_indices": [ + 623, + 624 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "625", + "bibliography_indices": [ + 625 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "626", + "bibliography_indices": [ + 626 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "627 and 628", + "bibliography_indices": [ + 627, + 628 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "629–633", + "bibliography_indices": [ + 629, + 630, + 631, + 632, + 633 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "632 and 634", + "bibliography_indices": [ + 632, + 634 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "635", + "bibliography_indices": [ + 635 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "636 and 637", + "bibliography_indices": [ + 636, + 637 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "638", + "bibliography_indices": [ + 638 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "639", + "bibliography_indices": [ + 639 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "640 and 641", + "bibliography_indices": [ + 640, + 641 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "642", + "bibliography_indices": [ + 642 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "643", + "bibliography_indices": [ + 643 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "644–647", + "bibliography_indices": [ + 644, + 645, + 646, + 647 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "535", + "bibliography_indices": [ + 535 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "43, 536, and 537", + "bibliography_indices": [ + 43, + 536, + 537 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "51", + "bibliography_indices": [ + 51 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "648 and 649", + "bibliography_indices": [ + 648, + 649 + ] + }, + { + "row_index": 57, + "column_index": 4, + "value": "650", + "bibliography_indices": [ + 650 + ] + }, + { + "row_index": 58, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 59, + "column_index": 4, + "value": "103 and 651", + "bibliography_indices": [ + 103, + 651 + ] + } + ] + }, + { + "table_id": 4, + "table_key": "page_009_table_004", + "gold_csv": "../step2_table_reconstruction/tables/page_009_table_004/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "652", + "bibliography_indices": [ + 652 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "653", + "bibliography_indices": [ + 653 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "653", + "bibliography_indices": [ + 653 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "654", + "bibliography_indices": [ + 654 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "655–659", + "bibliography_indices": [ + 655, + 656, + 657, + 658, + 659 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "660", + "bibliography_indices": [ + 660 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "661", + "bibliography_indices": [ + 661 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "662 and 663", + "bibliography_indices": [ + 662, + 663 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "664–668", + "bibliography_indices": [ + 664, + 665, + 666, + 667, + 668 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "581, 669, and 670", + "bibliography_indices": [ + 581, + 669, + 670 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "51 and 52", + "bibliography_indices": [ + 51, + 52 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "671", + "bibliography_indices": [ + 671 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "672 and 673", + "bibliography_indices": [ + 672, + 673 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "674", + "bibliography_indices": [ + 674 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "671 and 675–679", + "bibliography_indices": [ + 671, + 675, + 676, + 677, + 678, + 679 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "67 and 681", + "bibliography_indices": [ + 67, + 681 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "682", + "bibliography_indices": [ + 682 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "682", + "bibliography_indices": [ + 682 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "682", + "bibliography_indices": [ + 682 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "683", + "bibliography_indices": [ + 683 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "684", + "bibliography_indices": [ + 684 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "685 and 686", + "bibliography_indices": [ + 685, + 686 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "687", + "bibliography_indices": [ + 687 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "44, 92, 94, 123, 128, 153, 176, 179, 198, 207, 218, 228, 238, 305, 365, 378, 379, 390, 581, 585, 664, 665, and 688–814", + "bibliography_indices": [ + 44, + 92, + 94, + 123, + 128, + 153, + 176, + 179, + 198, + 207, + 218, + 228, + 238, + 305, + 365, + 378, + 379, + 390, + 581, + 585, + 664, + 665, + 688, + 689, + 690, + 691, + 692, + 693, + 694, + 695, + 696, + 697, + 698, + 699, + 700, + 701, + 702, + 703, + 704, + 705, + 706, + 707, + 708, + 709, + 710, + 711, + 712, + 713, + 714, + 715, + 716, + 717, + 718, + 719, + 720, + 721, + 722, + 723, + 724, + 725, + 726, + 727, + 728, + 729, + 730, + 731, + 732, + 733, + 734, + 735, + 736, + 737, + 738, + 739, + 740, + 741, + 742, + 743, + 744, + 745, + 746, + 747, + 748, + 749, + 750, + 751, + 752, + 753, + 754, + 755, + 756, + 757, + 758, + 759, + 760, + 761, + 762, + 763, + 764, + 765, + 766, + 767, + 768, + 769, + 770, + 771, + 772, + 773, + 774, + 775, + 776, + 777, + 778, + 779, + 780, + 781, + 782, + 783, + 784, + 785, + 786, + 787, + 788, + 789, + 790, + 791, + 792, + 793, + 794, + 795, + 796, + 797, + 798, + 799, + 800, + 801, + 802, + 803, + 804, + 805, + 806, + 807, + 808, + 809, + 810, + 811, + 812, + 813, + 814 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "301, 334, 403, 405, 490, 815, and 816", + "bibliography_indices": [ + 301, + 334, + 403, + 405, + 490, + 815, + 816 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "817", + "bibliography_indices": [ + 817 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "818 and 819", + "bibliography_indices": [ + 818, + 819 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "820–822", + "bibliography_indices": [ + 820, + 821, + 822 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "823–825", + "bibliography_indices": [ + 823, + 824, + 825 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "826 and 827", + "bibliography_indices": [ + 826, + 827 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "828 and 829", + "bibliography_indices": [ + 828, + 829 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "375", + "bibliography_indices": [ + 375 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "375", + "bibliography_indices": [ + 375 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "95 and 830–838", + "bibliography_indices": [ + 95, + 830, + 831, + 832, + 833, + 834, + 835, + 836, + 837, + 838 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "122, 128, 760, 773, 782, 837, and 839–845", + "bibliography_indices": [ + 122, + 128, + 760, + 773, + 782, + 837, + 839, + 840, + 841, + 842, + 843, + 844, + 845 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "96, 760, 773, and 782", + "bibliography_indices": [ + 96, + 760, + 773, + 782 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "128, 212, 236, 273, 280, 285, 325, 328, 350, 359, 362, 396, 764, 788, 791, and 846–881", + "bibliography_indices": [ + 128, + 212, + 236, + 273, + 280, + 285, + 325, + 328, + 350, + 359, + 362, + 396, + 764, + 788, + 791, + 846, + 847, + 848, + 849, + 850, + 851, + 852, + 853, + 854, + 855, + 856, + 857, + 858, + 859, + 860, + 861, + 862, + 863, + 864, + 865, + 866, + 867, + 868, + 869, + 870, + 871, + 872, + 873, + 874, + 875, + 876, + 877, + 878, + 879, + 880, + 881 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "864 and 878", + "bibliography_indices": [ + 864, + 878 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "325, 334, 406, 407, 848, 882, and 883", + "bibliography_indices": [ + 325, + 334, + 406, + 407, + 848, + 882, + 883 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "736 and 884", + "bibliography_indices": [ + 736, + 884 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "375, 439, 442, 448, 607, 854, 864, 878, and 885–895", + "bibliography_indices": [ + 375, + 439, + 442, + 448, + 607, + 854, + 864, + 878, + 885, + 886, + 887, + 888, + 889, + 890, + 891, + 892, + 893, + 894, + 895 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "896", + "bibliography_indices": [ + 896 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "897 and 898", + "bibliography_indices": [ + 897, + 898 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "236, 890, and 899–906", + "bibliography_indices": [ + 236, + 890, + 899, + 900, + 901, + 902, + 903, + 904, + 905, + 906 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "890 and 907", + "bibliography_indices": [ + 890, + 907 + ] + } + ] + }, + { + "table_id": 5, + "table_key": "page_010_table_005", + "gold_csv": "../step2_table_reconstruction/tables/page_010_table_005/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "908", + "bibliography_indices": [ + 908 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "908–911", + "bibliography_indices": [ + 908, + 909, + 910, + 911 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "912", + "bibliography_indices": [ + 912 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "913–916", + "bibliography_indices": [ + 913, + 914, + 915, + 916 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "913", + "bibliography_indices": [ + 913 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "917", + "bibliography_indices": [ + 917 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "356, 377, 864, 914, and 918–924", + "bibliography_indices": [ + 356, + 377, + 864, + 914, + 918, + 919, + 920, + 921, + 922, + 923, + 924 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "418 and 925", + "bibliography_indices": [ + 418, + 925 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "864", + "bibliography_indices": [ + 864 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "864 and 926–930", + "bibliography_indices": [ + 864, + 926, + 927, + 928, + 929, + 930 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "931", + "bibliography_indices": [ + 931 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "932", + "bibliography_indices": [ + 932 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "766 and 933–956", + "bibliography_indices": [ + 766, + 933, + 934, + 935, + 936, + 937, + 938, + 939, + 940, + 941, + 942, + 943, + 944, + 945, + 946, + 947, + 948, + 949, + 950, + 951, + 952, + 953, + 954, + 955, + 956 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "121, 934–936, and 957", + "bibliography_indices": [ + 121, + 934, + 935, + 936, + 957 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "429, 449, 453, and 958–965", + "bibliography_indices": [ + 429, + 449, + 453, + 958, + 959, + 960, + 961, + 962, + 963, + 964, + 965 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "936 and 968", + "bibliography_indices": [ + 936, + 968 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "319 and 969–987", + "bibliography_indices": [ + 319, + 969, + 970, + 971, + 972, + 973, + 974, + 975, + 976, + 977, + 978, + 979, + 980, + 981, + 982, + 983, + 984, + 985, + 986, + 987 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "986, 988, and 989", + "bibliography_indices": [ + 986, + 988, + 989 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "493, 979, and 990", + "bibliography_indices": [ + 493, + 979, + 990 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "986, 989, and 991–994", + "bibliography_indices": [ + 986, + 989, + 991, + 992, + 993, + 994 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "989, 992, 993, and 995", + "bibliography_indices": [ + 989, + 992, + 993, + 995 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "931", + "bibliography_indices": [ + 931 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "977", + "bibliography_indices": [ + 977 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "996 and 997", + "bibliography_indices": [ + 996, + 997 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "998", + "bibliography_indices": [ + 998 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "932", + "bibliography_indices": [ + 932 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "999", + "bibliography_indices": [ + 999 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "51", + "bibliography_indices": [ + 51 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "648 and 649", + "bibliography_indices": [ + 648, + 649 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "103, 1000, and 1001", + "bibliography_indices": [ + 103, + 1000, + 1001 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "581, 668, 698, 705, and 1002–1005", + "bibliography_indices": [ + 581, + 668, + 698, + 705, + 1002, + 1003, + 1004, + 1005 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "1006–1010", + "bibliography_indices": [ + 1006, + 1007, + 1008, + 1009, + 1010 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "1010", + "bibliography_indices": [ + 1010 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "1011", + "bibliography_indices": [ + 1011 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1012–1014", + "bibliography_indices": [ + 1012, + 1013, + 1014 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1010", + "bibliography_indices": [ + 1010 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "910, 1015, and 1016", + "bibliography_indices": [ + 910, + 1015, + 1016 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "1017–1019", + "bibliography_indices": [ + 1017, + 1018, + 1019 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "581, 668, 670, 698, 705, and 1020–1028", + "bibliography_indices": [ + 581, + 668, + 670, + 698, + 705, + 1020, + 1021, + 1022, + 1023, + 1024, + 1025, + 1026, + 1027, + 1028 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "1026", + "bibliography_indices": [ + 1026 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "538, 817, and 1028–1031", + "bibliography_indices": [ + 538, + 817, + 1028, + 1029, + 1030, + 1031 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "736 and 1032–1036", + "bibliography_indices": [ + 736, + 1032, + 1033, + 1034, + 1035, + 1036 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "538", + "bibliography_indices": [ + 538 + ] + } + ] + }, + { + "table_id": 6, + "table_key": "page_011_table_006", + "gold_csv": "../step2_table_reconstruction/tables/page_011_table_006/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "1037", + "bibliography_indices": [ + 1037 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1038–1041", + "bibliography_indices": [ + 1038, + 1039, + 1040, + 1041 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "77 and 78", + "bibliography_indices": [ + 77, + 78 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "70 and 1042–1051", + "bibliography_indices": [ + 70, + 1042, + 1043, + 1044, + 1045, + 1046, + 1047, + 1048, + 1049, + 1050, + 1051 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1052", + "bibliography_indices": [ + 1052 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1053", + "bibliography_indices": [ + 1053 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "1054", + "bibliography_indices": [ + 1054 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "1055", + "bibliography_indices": [ + 1055 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "1056", + "bibliography_indices": [ + 1056 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1057–1061", + "bibliography_indices": [ + 1057, + 1058, + 1059, + 1060, + 1061 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "821, 1062, and 1063", + "bibliography_indices": [ + 821, + 1062, + 1063 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "609, 1064, and 1065", + "bibliography_indices": [ + 609, + 1064, + 1065 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "1053", + "bibliography_indices": [ + 1053 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1064–1066", + "bibliography_indices": [ + 1064, + 1065, + 1066 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "1053, 1067, and 1068", + "bibliography_indices": [ + 1053, + 1067, + 1068 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "1068 and 1069", + "bibliography_indices": [ + 1068, + 1069 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "1069", + "bibliography_indices": [ + 1069 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "1070", + "bibliography_indices": [ + 1070 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1071 and 1072", + "bibliography_indices": [ + 1071, + 1072 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "1073 and 1074", + "bibliography_indices": [ + 1073, + 1074 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "1074 and 1075", + "bibliography_indices": [ + 1074, + 1075 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "1074 and 1075", + "bibliography_indices": [ + 1074, + 1075 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "1075–1077", + "bibliography_indices": [ + 1075, + 1076, + 1077 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1075", + "bibliography_indices": [ + 1075 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "1078", + "bibliography_indices": [ + 1078 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "1079–1081", + "bibliography_indices": [ + 1079, + 1080, + 1081 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1079–1087", + "bibliography_indices": [ + 1079, + 1080, + 1081, + 1082, + 1083, + 1084, + 1085, + 1086, + 1087 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1060 and 1088–1090", + "bibliography_indices": [ + 1060, + 1088, + 1089, + 1090 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1053", + "bibliography_indices": [ + 1053 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1091", + "bibliography_indices": [ + 1091 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "1092", + "bibliography_indices": [ + 1092 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1053", + "bibliography_indices": [ + 1053 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "1093", + "bibliography_indices": [ + 1093 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1072 and 1093", + "bibliography_indices": [ + 1072, + 1093 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1094 and 1095", + "bibliography_indices": [ + 1094, + 1095 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "1096", + "bibliography_indices": [ + 1096 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "1097–1100", + "bibliography_indices": [ + 1097, + 1098, + 1099, + 1100 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "1097 and 1100", + "bibliography_indices": [ + 1097, + 1100 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "1101", + "bibliography_indices": [ + 1101 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "1102 and 1103", + "bibliography_indices": [ + 1102, + 1103 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1104–1106", + "bibliography_indices": [ + 1104, + 1105, + 1106 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1092 and 1107", + "bibliography_indices": [ + 1092, + 1107 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "1108–1110", + "bibliography_indices": [ + 1108, + 1109, + 1110 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "1111", + "bibliography_indices": [ + 1111 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "1107", + "bibliography_indices": [ + 1107 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "1107", + "bibliography_indices": [ + 1107 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "1112 and 1113", + "bibliography_indices": [ + 1112, + 1113 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "1113 and 1114", + "bibliography_indices": [ + 1113, + 1114 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "1115", + "bibliography_indices": [ + 1115 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "1092", + "bibliography_indices": [ + 1092 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "1116–1118", + "bibliography_indices": [ + 1116, + 1117, + 1118 + ] + } + ] + }, + { + "table_id": 7, + "table_key": "page_012_table_007", + "gold_csv": "../step2_table_reconstruction/tables/page_012_table_007/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "1119–1122", + "bibliography_indices": [ + 1119, + 1120, + 1121, + 1122 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "1123", + "bibliography_indices": [ + 1123 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1124", + "bibliography_indices": [ + 1124 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1124", + "bibliography_indices": [ + 1124 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "1125", + "bibliography_indices": [ + 1125 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1126", + "bibliography_indices": [ + 1126 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "1053 and 1067", + "bibliography_indices": [ + 1053, + 1067 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1127–1131", + "bibliography_indices": [ + 1127, + 1128, + 1129, + 1130, + 1131 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "1132", + "bibliography_indices": [ + 1132 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "1133", + "bibliography_indices": [ + 1133 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "1134", + "bibliography_indices": [ + 1134 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1135–1137", + "bibliography_indices": [ + 1135, + 1136, + 1137 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "1138", + "bibliography_indices": [ + 1138 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "1139", + "bibliography_indices": [ + 1139 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "1128 and 1140", + "bibliography_indices": [ + 1128, + 1140 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1141", + "bibliography_indices": [ + 1141 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "1142–1146", + "bibliography_indices": [ + 1142, + 1143, + 1144, + 1145, + 1146 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "1147", + "bibliography_indices": [ + 1147 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1149", + "bibliography_indices": [ + 1149 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "1150", + "bibliography_indices": [ + 1150 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "1151", + "bibliography_indices": [ + 1151 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "1152", + "bibliography_indices": [ + 1152 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "1153–1155", + "bibliography_indices": [ + 1153, + 1154, + 1155 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1156–1162", + "bibliography_indices": [ + 1156, + 1157, + 1158, + 1159, + 1160, + 1161, + 1162 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "1163 and 1164", + "bibliography_indices": [ + 1163, + 1164 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "1165", + "bibliography_indices": [ + 1165 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "60, 117, 145, 147, 204, 240, 264, 282, 291, 297, 300, 305, 306, 318, 323, 346, 350, 352, 368, 374, 812, 1011, 1149, 1157, 1159–1162, and 1166–1265", + "bibliography_indices": [ + 60, + 117, + 145, + 147, + 204, + 240, + 264, + 282, + 291, + 297, + 300, + 305, + 306, + 318, + 323, + 346, + 350, + 352, + 368, + 374, + 812, + 1011, + 1149, + 1157, + 1159, + 1160, + 1161, + 1162, + 1166, + 1167, + 1168, + 1169, + 1170, + 1171, + 1172, + 1173, + 1174, + 1175, + 1176, + 1177, + 1178, + 1179, + 1180, + 1181, + 1182, + 1183, + 1184, + 1185, + 1186, + 1187, + 1188, + 1189, + 1190, + 1191, + 1192, + 1193, + 1194, + 1195, + 1196, + 1197, + 1198, + 1199, + 1200, + 1201, + 1202, + 1203, + 1204, + 1205, + 1206, + 1207, + 1208, + 1209, + 1210, + 1211, + 1212, + 1213, + 1214, + 1215, + 1216, + 1217, + 1218, + 1219, + 1220, + 1221, + 1222, + 1223, + 1224, + 1225, + 1226, + 1227, + 1228, + 1229, + 1230, + 1231, + 1232, + 1233, + 1234, + 1235, + 1236, + 1237, + 1238, + 1239, + 1240, + 1241, + 1242, + 1243, + 1244, + 1245, + 1246, + 1247, + 1248, + 1249, + 1250, + 1251, + 1252, + 1253, + 1254, + 1255, + 1256, + 1257, + 1258, + 1259, + 1260, + 1261, + 1262, + 1263, + 1264, + 1265 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1266", + "bibliography_indices": [ + 1266 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1179", + "bibliography_indices": [ + 1179 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "292 and 1267", + "bibliography_indices": [ + 292, + 1267 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "457", + "bibliography_indices": [ + 457 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "1223, 1268, and 1269", + "bibliography_indices": [ + 1223, + 1268, + 1269 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1186", + "bibliography_indices": [ + 1186 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "1270–1275", + "bibliography_indices": [ + 1270, + 1271, + 1272, + 1273, + 1274, + 1275 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1193", + "bibliography_indices": [ + 1193 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1276–1278", + "bibliography_indices": [ + 1276, + 1277, + 1278 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "458", + "bibliography_indices": [ + 458 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "1160 and 1279–1285", + "bibliography_indices": [ + 1160, + 1279, + 1280, + 1281, + 1282, + 1283, + 1284, + 1285 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "76 and 1286–1288", + "bibliography_indices": [ + 76, + 1286, + 1287, + 1288 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "1289", + "bibliography_indices": [ + 1289 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "77, 78, 84, and 1290–1305", + "bibliography_indices": [ + 77, + 78, + 84, + 1290, + 1291, + 1292, + 1293, + 1294, + 1295, + 1296, + 1297, + 1298, + 1299, + 1300, + 1301, + 1302, + 1303, + 1304, + 1305 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1305", + "bibliography_indices": [ + 1305 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1156 and 1306–1314", + "bibliography_indices": [ + 1156, + 1306, + 1307, + 1308, + 1309, + 1310, + 1311, + 1312, + 1313, + 1314 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "206, 1177, 1194, 1215, and 1315–1320", + "bibliography_indices": [ + 206, + 1177, + 1194, + 1215, + 1315, + 1316, + 1317, + 1318, + 1319, + 1320 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "1321", + "bibliography_indices": [ + 1321 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "1304", + "bibliography_indices": [ + 1304 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "680, 1279, 1292, 1293, 1295–1297, 1304, and 1322", + "bibliography_indices": [ + 680, + 1279, + 1292, + 1293, + 1295, + 1296, + 1297, + 1304, + 1322 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "1150, 1287, and 1323–1339", + "bibliography_indices": [ + 1150, + 1287, + 1323, + 1324, + 1325, + 1326, + 1327, + 1328, + 1329, + 1330, + 1331, + 1332, + 1333, + 1334, + 1335, + 1336, + 1337, + 1338, + 1339 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "1340", + "bibliography_indices": [ + 1340 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "1341", + "bibliography_indices": [ + 1341 + ] + } + ] + }, + { + "table_id": 8, + "table_key": "page_013_table_008", + "gold_csv": "../step2_table_reconstruction/tables/page_013_table_008/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "1342–1344", + "bibliography_indices": [ + 1342, + 1343, + 1344 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1312–1314 and 1345–1355", + "bibliography_indices": [ + 1312, + 1313, + 1314, + 1345, + 1346, + 1347, + 1348, + 1349, + 1350, + 1351, + 1352, + 1353, + 1354, + 1355 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1356", + "bibliography_indices": [ + 1356 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "1321", + "bibliography_indices": [ + 1321 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1356", + "bibliography_indices": [ + 1356 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "1044, 1323, 1326–1328, 1330, and 1357–1366", + "bibliography_indices": [ + 1044, + 1323, + 1326, + 1327, + 1328, + 1330, + 1357, + 1358, + 1359, + 1360, + 1361, + 1362, + 1363, + 1364, + 1365, + 1366 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "1367", + "bibliography_indices": [ + 1367 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "1367", + "bibliography_indices": [ + 1367 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1368 and 1369", + "bibliography_indices": [ + 1368, + 1369 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "1368", + "bibliography_indices": [ + 1368 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "1370–1372", + "bibliography_indices": [ + 1370, + 1371, + 1372 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "1373", + "bibliography_indices": [ + 1373 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1374 and 1375", + "bibliography_indices": [ + 1374, + 1375 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "1376 and 1377", + "bibliography_indices": [ + 1376, + 1377 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "1378 and 1379", + "bibliography_indices": [ + 1378, + 1379 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "485 and 1380–1384", + "bibliography_indices": [ + 485, + 1380, + 1381, + 1382, + 1383, + 1384 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "496, 1385, and 1386", + "bibliography_indices": [ + 496, + 1385, + 1386 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "1387", + "bibliography_indices": [ + 1387 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1286", + "bibliography_indices": [ + 1286 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "1388", + "bibliography_indices": [ + 1388 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "502, 516, and 1389–1394", + "bibliography_indices": [ + 502, + 516, + 1389, + 1390, + 1391, + 1392, + 1393, + 1394 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "1395", + "bibliography_indices": [ + 1395 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "1396", + "bibliography_indices": [ + 1396 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1388, 1394, and 1397–1410", + "bibliography_indices": [ + 1388, + 1394, + 1397, + 1398, + 1399, + 1400, + 1401, + 1402, + 1403, + 1404, + 1405, + 1406, + 1407, + 1408, + 1409, + 1410 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "506, 507, and 1411–1415", + "bibliography_indices": [ + 506, + 507, + 1411, + 1412, + 1413, + 1414, + 1415 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "1414", + "bibliography_indices": [ + 1414 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1416", + "bibliography_indices": [ + 1416 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1416", + "bibliography_indices": [ + 1416 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "508–511, 514, 516, 518, 521, 524, 1390, 1393, and 1417–1467", + "bibliography_indices": [ + 508, + 509, + 510, + 511, + 514, + 516, + 518, + 521, + 524, + 1390, + 1393, + 1417, + 1418, + 1419, + 1420, + 1421, + 1422, + 1423, + 1424, + 1425, + 1426, + 1427, + 1428, + 1429, + 1430, + 1431, + 1432, + 1433, + 1434, + 1435, + 1436, + 1437, + 1438, + 1439, + 1440, + 1441, + 1442, + 1443, + 1444, + 1445, + 1446, + 1447, + 1448, + 1449, + 1450, + 1451, + 1452, + 1453, + 1454, + 1455, + 1456, + 1457, + 1458, + 1459, + 1460, + 1461, + 1462, + 1463, + 1464, + 1465, + 1466, + 1467 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1468", + "bibliography_indices": [ + 1468 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "1469–1476", + "bibliography_indices": [ + 1469, + 1470, + 1471, + 1472, + 1473, + 1474, + 1475, + 1476 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "512, 514, 1390, 1424, 1433, 1438, and 1477–1485", + "bibliography_indices": [ + 512, + 514, + 1390, + 1424, + 1433, + 1438, + 1477, + 1478, + 1479, + 1480, + 1481, + 1482, + 1483, + 1484, + 1485 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1475 and 1486", + "bibliography_indices": [ + 1475, + 1486 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "527, 1487, and 1488", + "bibliography_indices": [ + 527, + 1487, + 1488 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1489", + "bibliography_indices": [ + 1489 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1450 and 1490", + "bibliography_indices": [ + 1450, + 1490 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "1390", + "bibliography_indices": [ + 1390 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "1480", + "bibliography_indices": [ + 1480 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "1475 and 1491", + "bibliography_indices": [ + 1475, + 1491 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "534", + "bibliography_indices": [ + 534 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1492 and 1493", + "bibliography_indices": [ + 1492, + 1493 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1494–1496", + "bibliography_indices": [ + 1494, + 1495, + 1496 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "1497 and 1498", + "bibliography_indices": [ + 1497, + 1498 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "558 and 1499", + "bibliography_indices": [ + 558, + 1499 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "1500 and 1501", + "bibliography_indices": [ + 1500, + 1501 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "689 and 1502", + "bibliography_indices": [ + 689, + 1502 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "1503", + "bibliography_indices": [ + 1503 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "534", + "bibliography_indices": [ + 534 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "1148 and 1504", + "bibliography_indices": [ + 1148, + 1504 + ] + } + ] + }, + { + "table_id": 9, + "table_key": "page_014_table_009", + "gold_csv": "../step2_table_reconstruction/tables/page_014_table_009/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "1505 and 1506", + "bibliography_indices": [ + 1505, + 1506 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1507", + "bibliography_indices": [ + 1507 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1507", + "bibliography_indices": [ + 1507 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "838", + "bibliography_indices": [ + 838 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1508", + "bibliography_indices": [ + 1508 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "885", + "bibliography_indices": [ + 885 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1509", + "bibliography_indices": [ + 1509 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "1509 and 1510", + "bibliography_indices": [ + 1509, + 1510 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "675, 677, and 1511–1513", + "bibliography_indices": [ + 675, + 677, + 1511, + 1512, + 1513 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1514", + "bibliography_indices": [ + 1514 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "1515 and 1516", + "bibliography_indices": [ + 1515, + 1516 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "1515 and 1517–1520", + "bibliography_indices": [ + 1515, + 1517, + 1518, + 1519, + 1520 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1521", + "bibliography_indices": [ + 1521 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "1522 and 1523", + "bibliography_indices": [ + 1522, + 1523 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "1524", + "bibliography_indices": [ + 1524 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "135, 153, and 1524–1526", + "bibliography_indices": [ + 135, + 153, + 1524, + 1525, + 1526 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "1527–1532", + "bibliography_indices": [ + 1527, + 1528, + 1529, + 1530, + 1531, + 1532 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "1533", + "bibliography_indices": [ + 1533 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1534", + "bibliography_indices": [ + 1534 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "1535", + "bibliography_indices": [ + 1535 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "98, 128, 135, 138, 146, 162, 221, 736, 1516, and 1536–1563", + "bibliography_indices": [ + 98, + 128, + 135, + 138, + 146, + 162, + 221, + 736, + 1516, + 1536, + 1537, + 1538, + 1539, + 1540, + 1541, + 1542, + 1543, + 1544, + 1545, + 1546, + 1547, + 1548, + 1549, + 1550, + 1551, + 1552, + 1553, + 1554, + 1555, + 1556, + 1557, + 1558, + 1559, + 1560, + 1561, + 1562, + 1563 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "1544 and 1545", + "bibliography_indices": [ + 1544, + 1545 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1564 and 1565", + "bibliography_indices": [ + 1564, + 1565 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "1566", + "bibliography_indices": [ + 1566 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "1567–1570", + "bibliography_indices": [ + 1567, + 1568, + 1569, + 1570 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1571–1573", + "bibliography_indices": [ + 1571, + 1572, + 1573 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1574 and 1575", + "bibliography_indices": [ + 1574, + 1575 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1571 and 1576", + "bibliography_indices": [ + 1571, + 1576 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1577", + "bibliography_indices": [ + 1577 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "1578", + "bibliography_indices": [ + 1578 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "1579–1581", + "bibliography_indices": [ + 1579, + 1580, + 1581 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1582", + "bibliography_indices": [ + 1582 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "1579–1584", + "bibliography_indices": [ + 1579, + 1580, + 1581, + 1582, + 1583, + 1584 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1578", + "bibliography_indices": [ + 1578 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1578", + "bibliography_indices": [ + 1578 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "1585", + "bibliography_indices": [ + 1585 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "1585", + "bibliography_indices": [ + 1585 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "1586", + "bibliography_indices": [ + 1586 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "861 and 1587", + "bibliography_indices": [ + 861, + 1587 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "273, 850, 852, 853, 879, and 1588–1594", + "bibliography_indices": [ + 273, + 850, + 852, + 853, + 879, + 1588, + 1589, + 1590, + 1591, + 1592, + 1593, + 1594 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1592", + "bibliography_indices": [ + 1592 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1595–1598", + "bibliography_indices": [ + 1595, + 1596, + 1597, + 1598 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "1592", + "bibliography_indices": [ + 1592 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "1598", + "bibliography_indices": [ + 1598 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "1587 and 1599", + "bibliography_indices": [ + 1587, + 1599 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "1600", + "bibliography_indices": [ + 1600 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "1587", + "bibliography_indices": [ + 1587 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "1571", + "bibliography_indices": [ + 1571 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "350, 1517–1519, and 1601–1605", + "bibliography_indices": [ + 350, + 1517, + 1518, + 1519, + 1601, + 1602, + 1603, + 1604, + 1605 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "295, 311, 315, 320, 1601, and 1606", + "bibliography_indices": [ + 295, + 311, + 315, + 320, + 1601, + 1606 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "1607", + "bibliography_indices": [ + 1607 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "1596 and 1608", + "bibliography_indices": [ + 1596, + 1608 + ] + } + ] + }, + { + "table_id": 10, + "table_key": "page_015_table_010", + "gold_csv": "../step2_table_reconstruction/tables/page_015_table_010/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "1601 and 1609", + "bibliography_indices": [ + 1601, + 1609 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "1610–1615", + "bibliography_indices": [ + 1610, + 1611, + 1612, + 1613, + 1614, + 1615 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1616–1619", + "bibliography_indices": [ + 1616, + 1617, + 1618, + 1619 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1618", + "bibliography_indices": [ + 1618 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "998", + "bibliography_indices": [ + 998 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1620", + "bibliography_indices": [ + 1620 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "1609", + "bibliography_indices": [ + 1609 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1621", + "bibliography_indices": [ + 1621 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1623", + "bibliography_indices": [ + 1623 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "103 and 1624", + "bibliography_indices": [ + 103, + 1624 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "103 and 651", + "bibliography_indices": [ + 103, + 651 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "650", + "bibliography_indices": [ + 650 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "652", + "bibliography_indices": [ + 652 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "103, 1000, and 1001", + "bibliography_indices": [ + 103, + 1000, + 1001 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "1625", + "bibliography_indices": [ + 1625 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "91, 122, 391, 842, 1539, and 1626–1629", + "bibliography_indices": [ + 91, + 122, + 391, + 842, + 1539, + 1626, + 1627, + 1628, + 1629 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "933, 935, and 1630–1632", + "bibliography_indices": [ + 933, + 935, + 1630, + 1631, + 1632 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "935 and 1630", + "bibliography_indices": [ + 935, + 1630 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "1633", + "bibliography_indices": [ + 1633 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1634", + "bibliography_indices": [ + 1634 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "933 and 1635", + "bibliography_indices": [ + 933, + 1635 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1636–1640", + "bibliography_indices": [ + 1636, + 1637, + 1638, + 1639, + 1640 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1638 and 1640", + "bibliography_indices": [ + 1638, + 1640 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1641", + "bibliography_indices": [ + 1641 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "95, 98, and 1642–1651", + "bibliography_indices": [ + 95, + 98, + 1642, + 1643, + 1644, + 1645, + 1646, + 1647, + 1648, + 1649, + 1650, + 1651 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "1649", + "bibliography_indices": [ + 1649 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1649 and 1652–1659", + "bibliography_indices": [ + 1649, + 1652, + 1653, + 1654, + 1655, + 1656, + 1657, + 1658, + 1659 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "196, 1649, 1656, and 1660–1670", + "bibliography_indices": [ + 196, + 1649, + 1656, + 1660, + 1661, + 1662, + 1663, + 1664, + 1665, + 1666, + 1667, + 1668, + 1669, + 1670 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "994 and 1671", + "bibliography_indices": [ + 994, + 1671 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "900", + "bibliography_indices": [ + 900 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "906 and 1672–1677", + "bibliography_indices": [ + 906, + 1672, + 1673, + 1674, + 1675, + 1676, + 1677 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "1678", + "bibliography_indices": [ + 1678 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "1679", + "bibliography_indices": [ + 1679 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "1680", + "bibliography_indices": [ + 1680 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "1681 and 1682", + "bibliography_indices": [ + 1681, + 1682 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1681", + "bibliography_indices": [ + 1681 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1683", + "bibliography_indices": [ + 1683 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "1684", + "bibliography_indices": [ + 1684 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "1644 and 1685–1687", + "bibliography_indices": [ + 1644, + 1685, + 1686, + 1687 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "1688", + "bibliography_indices": [ + 1688 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "1689 and 1690", + "bibliography_indices": [ + 1689, + 1690 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "1691", + "bibliography_indices": [ + 1691 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "1652, 1654, 1687, and 1692", + "bibliography_indices": [ + 1652, + 1654, + 1687, + 1692 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "1693", + "bibliography_indices": [ + 1693 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "1653 and 1694", + "bibliography_indices": [ + 1653, + 1694 + ] + } + ] + }, + { + "table_id": 11, + "table_key": "page_016_table_011", + "gold_csv": "../step2_table_reconstruction/tables/page_016_table_011/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "1695", + "bibliography_indices": [ + 1695 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1684", + "bibliography_indices": [ + 1684 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1136", + "bibliography_indices": [ + 1136 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "1696–1698", + "bibliography_indices": [ + 1696, + 1697, + 1698 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1699 and 1700", + "bibliography_indices": [ + 1699, + 1700 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "1701", + "bibliography_indices": [ + 1701 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1696", + "bibliography_indices": [ + 1696 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "368, 396, 1011, and 1702–1704", + "bibliography_indices": [ + 368, + 396, + 1011, + 1702, + 1703, + 1704 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "1705", + "bibliography_indices": [ + 1705 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1706", + "bibliography_indices": [ + 1706 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "1707 and 1708", + "bibliography_indices": [ + 1707, + 1708 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "1300", + "bibliography_indices": [ + 1300 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1315 and 1709–1714", + "bibliography_indices": [ + 1315, + 1709, + 1710, + 1711, + 1712, + 1713, + 1714 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "1287, 1708, and 1715–1722", + "bibliography_indices": [ + 1287, + 1708, + 1715, + 1716, + 1717, + 1718, + 1719, + 1720, + 1721, + 1722 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "1315 and 1346", + "bibliography_indices": [ + 1315, + 1346 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "70, 1042–1047, 1049–1051, 1338, 1360, 1364, 1366, 1708, 1720, 1721, and 1723–1747", + "bibliography_indices": [ + 70, + 1042, + 1043, + 1044, + 1045, + 1046, + 1047, + 1049, + 1050, + 1051, + 1338, + 1360, + 1364, + 1366, + 1708, + 1720, + 1721, + 1723, + 1724, + 1725, + 1726, + 1727, + 1728, + 1729, + 1730, + 1731, + 1732, + 1733, + 1734, + 1735, + 1736, + 1737, + 1738, + 1739, + 1740, + 1741, + 1742, + 1743, + 1744, + 1745, + 1746, + 1747 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "1367", + "bibliography_indices": [ + 1367 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "1367 and 1748–1750", + "bibliography_indices": [ + 1367, + 1748, + 1749, + 1750 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1751 and 1752", + "bibliography_indices": [ + 1751, + 1752 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "128 and 1753–1757", + "bibliography_indices": [ + 128, + 1753, + 1754, + 1755, + 1756, + 1757 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "1757", + "bibliography_indices": [ + 1757 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "1758", + "bibliography_indices": [ + 1758 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "787, 1759, and 1760", + "bibliography_indices": [ + 787, + 1759, + 1760 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "1761", + "bibliography_indices": [ + 1761 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "1761", + "bibliography_indices": [ + 1761 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1762", + "bibliography_indices": [ + 1762 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "485, 1381, and 1382", + "bibliography_indices": [ + 485, + 1381, + 1382 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1763 and 1764", + "bibliography_indices": [ + 1763, + 1764 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1177, 1178, and 1765–1772", + "bibliography_indices": [ + 1177, + 1178, + 1765, + 1766, + 1767, + 1768, + 1769, + 1770, + 1771, + 1772 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "1388", + "bibliography_indices": [ + 1388 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "1406", + "bibliography_indices": [ + 1406 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1436, 1449, and 1773–1781", + "bibliography_indices": [ + 1436, + 1449, + 1773, + 1774, + 1775, + 1776, + 1777, + 1778, + 1779, + 1780, + 1781 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "1782–1784", + "bibliography_indices": [ + 1782, + 1783, + 1784 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1389 and 1391", + "bibliography_indices": [ + 1389, + 1391 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1785", + "bibliography_indices": [ + 1785 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "1398, 1399, and 1411", + "bibliography_indices": [ + 1398, + 1399, + 1411 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "1394, 1428, 1786, and 1787", + "bibliography_indices": [ + 1394, + 1428, + 1786, + 1787 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "1476, 1775, 1777, 1788, and 1789", + "bibliography_indices": [ + 1476, + 1775, + 1777, + 1788, + 1789 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "1790", + "bibliography_indices": [ + 1790 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1421, 1791, and 1792", + "bibliography_indices": [ + 1421, + 1791, + 1792 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1793 and 1794", + "bibliography_indices": [ + 1793, + 1794 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "1286", + "bibliography_indices": [ + 1286 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "128, 714, 747, 1369, and 1795–1812", + "bibliography_indices": [ + 128, + 714, + 747, + 1369, + 1795, + 1796, + 1797, + 1798, + 1799, + 1800, + 1801, + 1802, + 1803, + 1804, + 1805, + 1806, + 1807, + 1808, + 1809, + 1810, + 1811, + 1812 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "1804 and 1813–1818", + "bibliography_indices": [ + 1804, + 1813, + 1814, + 1815, + 1816, + 1817, + 1818 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "1804", + "bibliography_indices": [ + 1804 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "1804, 1813, 1814, and 1819–1821", + "bibliography_indices": [ + 1804, + 1813, + 1814, + 1819, + 1820, + 1821 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "459 and 883", + "bibliography_indices": [ + 459, + 883 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "459", + "bibliography_indices": [ + 459 + ] + } + ] + }, + { + "table_id": 12, + "table_key": "page_017_table_012", + "gold_csv": "../step2_table_reconstruction/tables/page_017_table_012/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "1822–1825", + "bibliography_indices": [ + 1822, + 1823, + 1824, + 1825 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "1760, 1826, and 1827", + "bibliography_indices": [ + 1760, + 1826, + 1827 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1828", + "bibliography_indices": [ + 1828 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "384", + "bibliography_indices": [ + 384 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "534", + "bibliography_indices": [ + 534 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "1797", + "bibliography_indices": [ + 1797 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1829", + "bibliography_indices": [ + 1829 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "1226 and 1829", + "bibliography_indices": [ + 1226, + 1829 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "534, 1148, and 1504", + "bibliography_indices": [ + 534, + 1148, + 1504 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1830", + "bibliography_indices": [ + 1830 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "1519", + "bibliography_indices": [ + 1519 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "1509 and 1510", + "bibliography_indices": [ + 1509, + 1510 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "675 and 1831", + "bibliography_indices": [ + 675, + 1831 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1832", + "bibliography_indices": [ + 1832 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "1135 and 1137", + "bibliography_indices": [ + 1135, + 1137 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "44, 1088, 1111, 1577, and 1833–1835", + "bibliography_indices": [ + 44, + 1088, + 1111, + 1577, + 1833, + 1834, + 1835 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "237, 1836, and 1837", + "bibliography_indices": [ + 237, + 1836, + 1837 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "654 and 1838–1842", + "bibliography_indices": [ + 654, + 1838, + 1839, + 1840, + 1841, + 1842 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1053 and 1843", + "bibliography_indices": [ + 1053, + 1843 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "1844", + "bibliography_indices": [ + 1844 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "1607", + "bibliography_indices": [ + 1607 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "1844", + "bibliography_indices": [ + 1844 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "1835, 1845, and 1846", + "bibliography_indices": [ + 1835, + 1845, + 1846 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1847", + "bibliography_indices": [ + 1847 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "1848", + "bibliography_indices": [ + 1848 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "1849 and 1850", + "bibliography_indices": [ + 1849, + 1850 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1851 and 1852", + "bibliography_indices": [ + 1851, + 1852 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1850 and 1853–1856", + "bibliography_indices": [ + 1850, + 1853, + 1854, + 1855, + 1856 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1857", + "bibliography_indices": [ + 1857 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "67 and 1858", + "bibliography_indices": [ + 67, + 1858 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "654", + "bibliography_indices": [ + 654 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "539", + "bibliography_indices": [ + 539 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1625", + "bibliography_indices": [ + 1625 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1135 and 1137", + "bibliography_indices": [ + 1135, + 1137 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1859 and 1860", + "bibliography_indices": [ + 1859, + 1860 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "1859", + "bibliography_indices": [ + 1859 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "1861 and 1862", + "bibliography_indices": [ + 1861, + 1862 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "1863", + "bibliography_indices": [ + 1863 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "1863", + "bibliography_indices": [ + 1863 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "540", + "bibliography_indices": [ + 540 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "1864 and 1865", + "bibliography_indices": [ + 1864, + 1865 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "540", + "bibliography_indices": [ + 540 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + } + ] + }, + { + "table_id": 13, + "table_key": "page_018_table_013", + "gold_csv": "../step2_table_reconstruction/tables/page_018_table_013/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "1583, 1864, and 1866", + "bibliography_indices": [ + 1583, + 1864, + 1866 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1866", + "bibliography_indices": [ + 1866 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1867", + "bibliography_indices": [ + 1867 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "96 and 1868–1870", + "bibliography_indices": [ + 96, + 1868, + 1869, + 1870 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1871–1873", + "bibliography_indices": [ + 1871, + 1872, + 1873 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "684", + "bibliography_indices": [ + 684 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "1584, 1864, and 1874", + "bibliography_indices": [ + 1584, + 1864, + 1874 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "1527, 1528, and 1530–1532", + "bibliography_indices": [ + 1527, + 1528, + 1530, + 1531, + 1532 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "1875", + "bibliography_indices": [ + 1875 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1876", + "bibliography_indices": [ + 1876 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "1877", + "bibliography_indices": [ + 1877 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1878", + "bibliography_indices": [ + 1878 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "1879 and 1880", + "bibliography_indices": [ + 1879, + 1880 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "1881 and 1882", + "bibliography_indices": [ + 1881, + 1882 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "1881 and 1882", + "bibliography_indices": [ + 1881, + 1882 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "92, 135, 154, 160, 168, 169, 171–173, 175, 188–190, 199, 221, 259, 310, 587, 741, 761, 1520, 1541, 1551, 1554–1562, 1566, 1610, 1839, and 1883–1974", + "bibliography_indices": [ + 92, + 135, + 154, + 160, + 168, + 169, + 171, + 172, + 173, + 175, + 188, + 189, + 190, + 199, + 221, + 259, + 310, + 587, + 741, + 761, + 1520, + 1541, + 1551, + 1554, + 1555, + 1556, + 1557, + 1558, + 1559, + 1560, + 1561, + 1562, + 1566, + 1610, + 1839, + 1883, + 1884, + 1885, + 1886, + 1887, + 1888, + 1889, + 1890, + 1891, + 1892, + 1893, + 1894, + 1895, + 1896, + 1897, + 1898, + 1899, + 1900, + 1901, + 1902, + 1903, + 1904, + 1905, + 1906, + 1907, + 1908, + 1909, + 1910, + 1911, + 1912, + 1913, + 1914, + 1915, + 1916, + 1917, + 1918, + 1919, + 1920, + 1921, + 1922, + 1923, + 1924, + 1925, + 1926, + 1927, + 1928, + 1929, + 1930, + 1931, + 1932, + 1933, + 1934, + 1935, + 1936, + 1937, + 1938, + 1939, + 1940, + 1941, + 1942, + 1943, + 1944, + 1945, + 1946, + 1947, + 1948, + 1949, + 1950, + 1951, + 1952, + 1953, + 1954, + 1955, + 1956, + 1957, + 1958, + 1959, + 1960, + 1961, + 1962, + 1963, + 1964, + 1965, + 1966, + 1967, + 1968, + 1969, + 1970, + 1971, + 1972, + 1973, + 1974 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "1975 and 1976", + "bibliography_indices": [ + 1975, + 1976 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "420, 423, 1897, 1917, 1933, 1951, 1954, 1977, and 1978", + "bibliography_indices": [ + 420, + 423, + 1897, + 1917, + 1933, + 1951, + 1954, + 1977, + 1978 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1979", + "bibliography_indices": [ + 1979 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1980", + "bibliography_indices": [ + 1980 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1566, 1896, 1901, 1981, and 1982", + "bibliography_indices": [ + 1566, + 1896, + 1901, + 1981, + 1982 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1981", + "bibliography_indices": [ + 1981 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "1901 and 1983–1987", + "bibliography_indices": [ + 1901, + 1983, + 1984, + 1985, + 1986, + 1987 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "1988", + "bibliography_indices": [ + 1988 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1989 and 1990", + "bibliography_indices": [ + 1989, + 1990 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "1990", + "bibliography_indices": [ + 1990 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1990", + "bibliography_indices": [ + 1990 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1990", + "bibliography_indices": [ + 1990 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "1579", + "bibliography_indices": [ + 1579 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "1991", + "bibliography_indices": [ + 1991 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "1579", + "bibliography_indices": [ + 1579 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "1521, 1581, 1860, 1991, and 1992", + "bibliography_indices": [ + 1521, + 1581, + 1860, + 1991, + 1992 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "1993", + "bibliography_indices": [ + 1993 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1993", + "bibliography_indices": [ + 1993 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1994", + "bibliography_indices": [ + 1994 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "1994", + "bibliography_indices": [ + 1994 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "1585", + "bibliography_indices": [ + 1585 + ] + } + ] + }, + { + "table_id": 14, + "table_key": "page_019_table_014", + "gold_csv": "../step2_table_reconstruction/tables/page_019_table_014/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "1585", + "bibliography_indices": [ + 1585 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "1995", + "bibliography_indices": [ + 1995 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "274 and 1996", + "bibliography_indices": [ + 274, + 1996 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1997–1999", + "bibliography_indices": [ + 1997, + 1998, + 1999 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "2000", + "bibliography_indices": [ + 2000 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1597", + "bibliography_indices": [ + 1597 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "908", + "bibliography_indices": [ + 908 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "908–911", + "bibliography_indices": [ + 908, + 909, + 910, + 911 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "2001", + "bibliography_indices": [ + 2001 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "684", + "bibliography_indices": [ + 684 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "2002 and 2003", + "bibliography_indices": [ + 2002, + 2003 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1867 and 2004", + "bibliography_indices": [ + 1867, + 2004 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "2005", + "bibliography_indices": [ + 2005 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "2006", + "bibliography_indices": [ + 2006 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "2007", + "bibliography_indices": [ + 2007 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "254, 312, 350, 358, 362, 654, 1601, 1602, 1605, 1660, 1960, and 2008–2033", + "bibliography_indices": [ + 254, + 312, + 350, + 358, + 362, + 654, + 1601, + 1602, + 1605, + 1660, + 1960, + 2008, + 2009, + 2010, + 2011, + 2012, + 2013, + 2014, + 2015, + 2016, + 2017, + 2018, + 2019, + 2020, + 2021, + 2022, + 2023, + 2024, + 2025, + 2026, + 2027, + 2028, + 2029, + 2030, + 2031, + 2032, + 2033 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "2009 and 2034–2039", + "bibliography_indices": [ + 2009, + 2034, + 2035, + 2036, + 2037, + 2038, + 2039 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "2040", + "bibliography_indices": [ + 2040 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "1667 and 2041–2044", + "bibliography_indices": [ + 1667, + 2041, + 2042, + 2043, + 2044 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "197, 468, 633, 1523, 1601, 1932, 1962, and 2045–2057", + "bibliography_indices": [ + 197, + 468, + 633, + 1523, + 1601, + 1932, + 1962, + 2045, + 2046, + 2047, + 2048, + 2049, + 2050, + 2051, + 2052, + 2053, + 2054, + 2055, + 2056, + 2057 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "1522 and 2058", + "bibliography_indices": [ + 1522, + 2058 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "440, 2006, and 2058–2069", + "bibliography_indices": [ + 440, + 2006, + 2058, + 2059, + 2060, + 2061, + 2062, + 2063, + 2064, + 2065, + 2066, + 2067, + 2068, + 2069 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "472–475", + "bibliography_indices": [ + 472, + 473, + 474, + 475 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "2070", + "bibliography_indices": [ + 2070 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "2062 and 2070", + "bibliography_indices": [ + 2062, + 2070 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "160, 247, 250, 253, 1601, 1842, 1849, 1912, 1967, 2023, and 2071–2095", + "bibliography_indices": [ + 160, + 247, + 250, + 253, + 1601, + 1842, + 1849, + 1912, + 1967, + 2023, + 2071, + 2072, + 2073, + 2074, + 2075, + 2076, + 2077, + 2078, + 2079, + 2080, + 2081, + 2082, + 2083, + 2084, + 2085, + 2086, + 2087, + 2088, + 2089, + 2090, + 2091, + 2092, + 2093, + 2094, + 2095 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "428, 616, 620, 829, 1521, 1610, 1611, 1938, 1994, 1998, and 2095–2108", + "bibliography_indices": [ + 428, + 616, + 620, + 829, + 1521, + 1610, + 1611, + 1938, + 1994, + 1998, + 2095, + 2096, + 2097, + 2098, + 2099, + 2100, + 2101, + 2102, + 2103, + 2104, + 2105, + 2106, + 2107, + 2108 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "438, 963, 1610, 1618, 1619, 1853, and 2109–2111", + "bibliography_indices": [ + 438, + 963, + 1610, + 1618, + 1619, + 1853, + 2109, + 2110, + 2111 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "1618", + "bibliography_indices": [ + 1618 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "998", + "bibliography_indices": [ + 998 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "2112", + "bibliography_indices": [ + 2112 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "2113–2116", + "bibliography_indices": [ + 2113, + 2114, + 2115, + 2116 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "501 and 1622", + "bibliography_indices": [ + 501, + 1622 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "2042, 2117, and 2118", + "bibliography_indices": [ + 2042, + 2117, + 2118 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "2119", + "bibliography_indices": [ + 2119 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "653 and 2120", + "bibliography_indices": [ + 653, + 2120 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "2121 and 2122", + "bibliography_indices": [ + 2121, + 2122 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "653", + "bibliography_indices": [ + 653 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "2123", + "bibliography_indices": [ + 2123 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "654", + "bibliography_indices": [ + 654 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "661", + "bibliography_indices": [ + 661 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "655–659", + "bibliography_indices": [ + 655, + 656, + 657, + 658, + 659 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "660", + "bibliography_indices": [ + 660 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "2116", + "bibliography_indices": [ + 2116 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "685 and 2124", + "bibliography_indices": [ + 685, + 2124 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "2125–2127", + "bibliography_indices": [ + 2125, + 2126, + 2127 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "2128", + "bibliography_indices": [ + 2128 + ] + } + ] + }, + { + "table_id": 15, + "table_key": "page_020_table_015", + "gold_csv": "../step2_table_reconstruction/tables/page_020_table_015/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "75, 77, 78, 81, 90, 92, 128, 392, 1291, 1541, 1627, 1883, and 2129–2134", + "bibliography_indices": [ + 75, + 77, + 78, + 81, + 90, + 92, + 128, + 392, + 1291, + 1541, + 1627, + 1883, + 2129, + 2130, + 2131, + 2132, + 2133, + 2134 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "103 and 2135", + "bibliography_indices": [ + 103, + 2135 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "2136", + "bibliography_indices": [ + 2136 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "2137", + "bibliography_indices": [ + 2137 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "2138", + "bibliography_indices": [ + 2138 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "85, 91, 122, 123, 128, 201, 803, 833, 842, 1539, 1563, 1627, 1885, and 2139–2146", + "bibliography_indices": [ + 85, + 91, + 122, + 123, + 128, + 201, + 803, + 833, + 842, + 1539, + 1563, + 1627, + 1885, + 2139, + 2140, + 2141, + 2142, + 2143, + 2144, + 2145, + 2146 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "2143, 2147, and 2148", + "bibliography_indices": [ + 2143, + 2147, + 2148 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "2149", + "bibliography_indices": [ + 2149 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "2150", + "bibliography_indices": [ + 2150 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "843, 918, and 2151–2154", + "bibliography_indices": [ + 843, + 918, + 2151, + 2152, + 2153, + 2154 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "375, 453, 918, 1650, 2152, and 2155", + "bibliography_indices": [ + 375, + 453, + 918, + 1650, + 2152, + 2155 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "2156", + "bibliography_indices": [ + 2156 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "2156", + "bibliography_indices": [ + 2156 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "2157", + "bibliography_indices": [ + 2157 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "2158", + "bibliography_indices": [ + 2158 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "2159", + "bibliography_indices": [ + 2159 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "933 and 2160–2162", + "bibliography_indices": [ + 933, + 2160, + 2161, + 2162 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "2160", + "bibliography_indices": [ + 2160 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "2163", + "bibliography_indices": [ + 2163 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "2163", + "bibliography_indices": [ + 2163 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "2164–2166", + "bibliography_indices": [ + 2164, + 2165, + 2166 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "2167 and 2168", + "bibliography_indices": [ + 2167, + 2168 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "2169", + "bibliography_indices": [ + 2169 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "2163", + "bibliography_indices": [ + 2163 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "2170", + "bibliography_indices": [ + 2170 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "2126 and 2127", + "bibliography_indices": [ + 2126, + 2127 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "2127", + "bibliography_indices": [ + 2127 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "2152 and 2171–2180", + "bibliography_indices": [ + 2152, + 2171, + 2172, + 2173, + 2174, + 2175, + 2176, + 2177, + 2178, + 2179, + 2180 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "2181", + "bibliography_indices": [ + 2181 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "964, 2152, 2182, and 2183", + "bibliography_indices": [ + 964, + 2152, + 2182, + 2183 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "2181–2183", + "bibliography_indices": [ + 2181, + 2182, + 2183 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "453", + "bibliography_indices": [ + 453 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "2184", + "bibliography_indices": [ + 2184 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "2185", + "bibliography_indices": [ + 2185 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "2186–2190", + "bibliography_indices": [ + 2186, + 2187, + 2188, + 2189, + 2190 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "2188", + "bibliography_indices": [ + 2188 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1669 and 2191–2193", + "bibliography_indices": [ + 1669, + 2191, + 2192, + 2193 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1668 and 2186", + "bibliography_indices": [ + 1668, + 2186 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "2190", + "bibliography_indices": [ + 2190 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "1671", + "bibliography_indices": [ + 1671 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "2194", + "bibliography_indices": [ + 2194 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "2194–2196", + "bibliography_indices": [ + 2194, + 2195, + 2196 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "2197", + "bibliography_indices": [ + 2197 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "2198", + "bibliography_indices": [ + 2198 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "2198", + "bibliography_indices": [ + 2198 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "2199", + "bibliography_indices": [ + 2199 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "2200", + "bibliography_indices": [ + 2200 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "1514", + "bibliography_indices": [ + 1514 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "2201–2206", + "bibliography_indices": [ + 2201, + 2202, + 2203, + 2204, + 2205, + 2206 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "165, 184, 187, 193, 220, 249, 309, 314, 1183, and 2207–2219", + "bibliography_indices": [ + 165, + 184, + 187, + 193, + 220, + 249, + 309, + 314, + 1183, + 2207, + 2208, + 2209, + 2210, + 2211, + 2212, + 2213, + 2214, + 2215, + 2216, + 2217, + 2218, + 2219 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "2202, 2205, and 2206", + "bibliography_indices": [ + 2202, + 2205, + 2206 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "2220", + "bibliography_indices": [ + 2220 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "2221", + "bibliography_indices": [ + 2221 + ] + } + ] + }, + { + "table_id": 16, + "table_key": "page_021_table_016", + "gold_csv": "../step2_table_reconstruction/tables/page_021_table_016/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "2220", + "bibliography_indices": [ + 2220 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "2222", + "bibliography_indices": [ + 2222 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "2223", + "bibliography_indices": [ + 2223 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "944, 945, 2207, and 2224–2226", + "bibliography_indices": [ + 944, + 945, + 2207, + 2224, + 2225, + 2226 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "2226–2229", + "bibliography_indices": [ + 2226, + 2227, + 2228, + 2229 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "2230", + "bibliography_indices": [ + 2230 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "1067, 1636, 1639, 1689, and 2231–2234", + "bibliography_indices": [ + 1067, + 1636, + 1639, + 1689, + 2231, + 2232, + 2233, + 2234 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "2235", + "bibliography_indices": [ + 2235 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "2236", + "bibliography_indices": [ + 2236 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "945, 1939, 2173, and 2384–2389", + "bibliography_indices": [ + 945, + 1939, + 2173, + 2384, + 2385, + 2386, + 2387, + 2388, + 2389 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "2237", + "bibliography_indices": [ + 2237 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "2238 and 2239", + "bibliography_indices": [ + 2238, + 2239 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "95, 98, 276, 832, 835, and 2240–2245", + "bibliography_indices": [ + 95, + 98, + 276, + 832, + 835, + 2240, + 2241, + 2242, + 2243, + 2244, + 2245 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "2246", + "bibliography_indices": [ + 2246 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "2247", + "bibliography_indices": [ + 2247 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "2248", + "bibliography_indices": [ + 2248 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "2249", + "bibliography_indices": [ + 2249 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "2250", + "bibliography_indices": [ + 2250 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "2251", + "bibliography_indices": [ + 2251 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "2248 and 2249", + "bibliography_indices": [ + 2248, + 2249 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "2252", + "bibliography_indices": [ + 2252 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "95, 98, 295, 350, 803, 1642, 1644, 1651, 1676, 2013, 2015, 2243, 2245, and 2253–2271", + "bibliography_indices": [ + 95, + 98, + 295, + 350, + 803, + 1642, + 1644, + 1651, + 1676, + 2013, + 2015, + 2243, + 2245, + 2253, + 2254, + 2255, + 2256, + 2257, + 2258, + 2259, + 2260, + 2261, + 2262, + 2263, + 2264, + 2265, + 2266, + 2267, + 2268, + 2269, + 2270, + 2271 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "2260", + "bibliography_indices": [ + 2260 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "2266 and 2272", + "bibliography_indices": [ + 2266, + 2272 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1092", + "bibliography_indices": [ + 1092 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "2273", + "bibliography_indices": [ + 2273 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "2260", + "bibliography_indices": [ + 2260 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "2273", + "bibliography_indices": [ + 2273 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1748 and 1750", + "bibliography_indices": [ + 1748, + 1750 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "915 and 2274", + "bibliography_indices": [ + 915, + 2274 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "2275", + "bibliography_indices": [ + 2275 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "913", + "bibliography_indices": [ + 913 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "2275", + "bibliography_indices": [ + 2275 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "2276", + "bibliography_indices": [ + 2276 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "2277", + "bibliography_indices": [ + 2277 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "2277", + "bibliography_indices": [ + 2277 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "2277", + "bibliography_indices": [ + 2277 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "2278", + "bibliography_indices": [ + 2278 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "2278", + "bibliography_indices": [ + 2278 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "2277–2281", + "bibliography_indices": [ + 2277, + 2278, + 2279, + 2280, + 2281 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "2277 and 2278", + "bibliography_indices": [ + 2277, + 2278 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "2282", + "bibliography_indices": [ + 2282 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "2283", + "bibliography_indices": [ + 2283 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "2283", + "bibliography_indices": [ + 2283 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "2283", + "bibliography_indices": [ + 2283 + ] + } + ] + }, + { + "table_id": 17, + "table_key": "page_022_table_017", + "gold_csv": "../step2_table_reconstruction/tables/page_022_table_017/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "662 and 663", + "bibliography_indices": [ + 662, + 663 + ] + } + ] + }, + { + "table_id": 18, + "table_key": "page_026_table_018", + "gold_csv": "../step2_table_reconstruction/tables/page_026_table_018/gold.csv", + "reference_column_index": 2, + "reference_column_header": "Ref.", + "citation_cells": [ + { + "row_index": 1, + "column_index": 2, + "value": "59", + "bibliography_indices": [ + 59 + ] + }, + { + "row_index": 2, + "column_index": 2, + "value": "2284", + "bibliography_indices": [ + 2284 + ] + }, + { + "row_index": 3, + "column_index": 2, + "value": "2285", + "bibliography_indices": [ + 2285 + ] + }, + { + "row_index": 4, + "column_index": 2, + "value": "1865", + "bibliography_indices": [ + 1865 + ] + }, + { + "row_index": 5, + "column_index": 2, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 6, + "column_index": 2, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 7, + "column_index": 2, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 8, + "column_index": 2, + "value": "2286", + "bibliography_indices": [ + 2286 + ] + }, + { + "row_index": 9, + "column_index": 2, + "value": "662", + "bibliography_indices": [ + 662 + ] + }, + { + "row_index": 10, + "column_index": 2, + "value": "673", + "bibliography_indices": [ + 673 + ] + }, + { + "row_index": 11, + "column_index": 2, + "value": "2287", + "bibliography_indices": [ + 2287 + ] + }, + { + "row_index": 12, + "column_index": 2, + "value": "2288", + "bibliography_indices": [ + 2288 + ] + }, + { + "row_index": 13, + "column_index": 2, + "value": "2289", + "bibliography_indices": [ + 2289 + ] + }, + { + "row_index": 14, + "column_index": 2, + "value": "1505", + "bibliography_indices": [ + 1505 + ] + }, + { + "row_index": 15, + "column_index": 2, + "value": "1508", + "bibliography_indices": [ + 1508 + ] + }, + { + "row_index": 16, + "column_index": 2, + "value": "2290", + "bibliography_indices": [ + 2290 + ] + }, + { + "row_index": 17, + "column_index": 2, + "value": "2291", + "bibliography_indices": [ + 2291 + ] + }, + { + "row_index": 18, + "column_index": 2, + "value": "663", + "bibliography_indices": [ + 663 + ] + }, + { + "row_index": 19, + "column_index": 2, + "value": "2292", + "bibliography_indices": [ + 2292 + ] + }, + { + "row_index": 20, + "column_index": 2, + "value": "2293", + "bibliography_indices": [ + 2293 + ] + }, + { + "row_index": 21, + "column_index": 2, + "value": "1038", + "bibliography_indices": [ + 1038 + ] + }, + { + "row_index": 22, + "column_index": 2, + "value": "1088", + "bibliography_indices": [ + 1088 + ] + }, + { + "row_index": 23, + "column_index": 2, + "value": "1111", + "bibliography_indices": [ + 1111 + ] + }, + { + "row_index": 24, + "column_index": 2, + "value": "2294", + "bibliography_indices": [ + 2294 + ] + }, + { + "row_index": 25, + "column_index": 2, + "value": "2295", + "bibliography_indices": [ + 2295 + ] + }, + { + "row_index": 26, + "column_index": 2, + "value": "45", + "bibliography_indices": [ + 45 + ] + }, + { + "row_index": 27, + "column_index": 2, + "value": "2296", + "bibliography_indices": [ + 2296 + ] + }, + { + "row_index": 28, + "column_index": 2, + "value": "2297", + "bibliography_indices": [ + 2297 + ] + }, + { + "row_index": 29, + "column_index": 2, + "value": "2282", + "bibliography_indices": [ + 2282 + ] + }, + { + "row_index": 30, + "column_index": 2, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 31, + "column_index": 2, + "value": "2298", + "bibliography_indices": [ + 2298 + ] + } + ] + }, + { + "table_id": 19, + "table_key": "page_028_table_019", + "gold_csv": "../step2_table_reconstruction/tables/page_028_table_019/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 10, + "value": "44", + "bibliography_indices": [ + 44 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "47", + "bibliography_indices": [ + 47 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "65", + "bibliography_indices": [ + 65 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "64", + "bibliography_indices": [ + 64 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "58, 60, and 61", + "bibliography_indices": [ + 58, + 60, + 61 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "55–57", + "bibliography_indices": [ + 55, + 56, + 57 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "63", + "bibliography_indices": [ + 63 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "79, 83, 86, 88, 93, and 2303", + "bibliography_indices": [ + 79, + 83, + 86, + 88, + 93, + 2303 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "101", + "bibliography_indices": [ + 101 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "101", + "bibliography_indices": [ + 101 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "88", + "bibliography_indices": [ + 88 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "103 and 104", + "bibliography_indices": [ + 103, + 104 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "86, 94, 107, 108, 118, 123, 158, 159, 179, 187, 189, 207, 209, 214, 219, 223–226, 243, 250, 258, 262, 268, 273, 279, 282, 298, 302, 309, 315, 321, 339, 348, 361, 362, 367, 387, 392, 624, 657, 770, 832, 1922, and 2304–2309", + "bibliography_indices": [ + 86, + 94, + 107, + 108, + 118, + 123, + 158, + 159, + 179, + 187, + 189, + 207, + 209, + 214, + 219, + 223, + 224, + 225, + 226, + 243, + 250, + 258, + 262, + 268, + 273, + 279, + 282, + 298, + 302, + 309, + 315, + 321, + 339, + 348, + 361, + 362, + 367, + 387, + 392, + 624, + 657, + 770, + 832, + 1922, + 2304, + 2305, + 2306, + 2307, + 2308, + 2309 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "292", + "bibliography_indices": [ + 292 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "313", + "bibliography_indices": [ + 313 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "399 and 402", + "bibliography_indices": [ + 399, + 402 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "460", + "bibliography_indices": [ + 460 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "421 and 2309", + "bibliography_indices": [ + 421, + 2309 + ] + } + ] + }, + { + "table_id": 20, + "table_key": "page_029_table_020", + "gold_csv": "../step2_table_reconstruction/tables/page_029_table_020/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "432", + "bibliography_indices": [ + 432 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "462", + "bibliography_indices": [ + 462 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "465", + "bibliography_indices": [ + 465 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "56", + "bibliography_indices": [ + 56 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "88", + "bibliography_indices": [ + 88 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "88", + "bibliography_indices": [ + 88 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "466", + "bibliography_indices": [ + 466 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "469", + "bibliography_indices": [ + 469 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "470", + "bibliography_indices": [ + 470 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "472 and 473", + "bibliography_indices": [ + 472, + 473 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "470", + "bibliography_indices": [ + 470 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "602", + "bibliography_indices": [ + 602 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "624", + "bibliography_indices": [ + 624 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "2310", + "bibliography_indices": [ + 2310 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "672 and 673", + "bibliography_indices": [ + 672, + 673 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "674", + "bibliography_indices": [ + 674 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "682", + "bibliography_indices": [ + 682 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "682", + "bibliography_indices": [ + 682 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "683", + "bibliography_indices": [ + 683 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "687", + "bibliography_indices": [ + 687 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "687", + "bibliography_indices": [ + 687 + ] + }, + { + "row_index": 27, + "column_index": 10, + "value": "44, 94, 128, 207, 365, 719, 720, 722–724, 727, 737, 738, 742, 744, 746–749, 753, 756, 758–760, 762, 767, 769, 770, 773, 775–778, 780–782, 785, 786, 788–790, 795, 800, 801, 803, 805, 806, 808, 809, 814, 1011, and 2311–2313", + "bibliography_indices": [ + 44, + 94, + 128, + 207, + 365, + 719, + 720, + 722, + 723, + 724, + 727, + 737, + 738, + 742, + 744, + 746, + 747, + 748, + 749, + 753, + 756, + 758, + 759, + 760, + 762, + 767, + 769, + 770, + 773, + 775, + 776, + 777, + 778, + 780, + 781, + 782, + 785, + 786, + 788, + 789, + 790, + 795, + 800, + 801, + 803, + 805, + 806, + 808, + 809, + 814, + 1011, + 2311, + 2312, + 2313 + ] + } + ] + }, + { + "table_id": 21, + "table_key": "page_030_table_021", + "gold_csv": "../step2_table_reconstruction/tables/page_030_table_021/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "780 and 799", + "bibliography_indices": [ + 780, + 799 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "799 and 812", + "bibliography_indices": [ + 799, + 812 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "748 and 754", + "bibliography_indices": [ + 748, + 754 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "757", + "bibliography_indices": [ + 757 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "123, 207, 728, 732, 733, 739, 750, 751, 772, and 807", + "bibliography_indices": [ + 123, + 207, + 728, + 732, + 733, + 739, + 750, + 751, + 772, + 807 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "731", + "bibliography_indices": [ + 731 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "490", + "bibliography_indices": [ + 490 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "815", + "bibliography_indices": [ + 815 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "817", + "bibliography_indices": [ + 817 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "817", + "bibliography_indices": [ + 817 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "818 and 819", + "bibliography_indices": [ + 818, + 819 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "820, 823, and 824", + "bibliography_indices": [ + 820, + 823, + 824 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "820–822 and 824", + "bibliography_indices": [ + 820, + 821, + 822, + 824 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "826", + "bibliography_indices": [ + 826 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "827", + "bibliography_indices": [ + 827 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "827", + "bibliography_indices": [ + 827 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "828", + "bibliography_indices": [ + 828 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "828", + "bibliography_indices": [ + 828 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "830, 834, 836, and 837", + "bibliography_indices": [ + 830, + 834, + 836, + 837 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "128, 760, 773, 782, 831, 832, 837, 839–841, and 845", + "bibliography_indices": [ + 128, + 760, + 773, + 782, + 831, + 832, + 837, + 839, + 840, + 841, + 845 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "773 and 782", + "bibliography_indices": [ + 773, + 782 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "128, 273, 328, 362, 788, 846–848, 850, 852, 855, 856, 859–861, 864–868, 870, 875, 877, 881, 914, and 2314", + "bibliography_indices": [ + 128, + 273, + 328, + 362, + 788, + 846, + 847, + 848, + 850, + 852, + 855, + 856, + 859, + 860, + 861, + 864, + 865, + 866, + 867, + 868, + 870, + 875, + 877, + 881, + 914, + 2314 + ] + } + ] + }, + { + "table_id": 22, + "table_key": "page_031_table_022", + "gold_csv": "../step2_table_reconstruction/tables/page_031_table_022/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "318 and 859", + "bibliography_indices": [ + 318, + 859 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "334, 848, and 882", + "bibliography_indices": [ + 334, + 848, + 882 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "736 and 884", + "bibliography_indices": [ + 736, + 884 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "899 and 1612", + "bibliography_indices": [ + 899, + 1612 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "899, 900, 1612, and 2315", + "bibliography_indices": [ + 899, + 900, + 1612, + 2315 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "906", + "bibliography_indices": [ + 906 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "439, 864, 885, 886, 891, and 892", + "bibliography_indices": [ + 439, + 864, + 885, + 886, + 891, + 892 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "888, 890, and 892", + "bibliography_indices": [ + 888, + 890, + 892 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "892", + "bibliography_indices": [ + 892 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "864", + "bibliography_indices": [ + 864 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "890 and 907", + "bibliography_indices": [ + 890, + 907 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "908", + "bibliography_indices": [ + 908 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "908–911", + "bibliography_indices": [ + 908, + 909, + 910, + 911 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "898", + "bibliography_indices": [ + 898 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "913", + "bibliography_indices": [ + 913 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "916", + "bibliography_indices": [ + 916 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "913", + "bibliography_indices": [ + 913 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "864, 914, 918, 919, 921, and 923", + "bibliography_indices": [ + 864, + 914, + 918, + 919, + 921, + 923 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "864", + "bibliography_indices": [ + 864 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "864, 928, and 930", + "bibliography_indices": [ + 864, + 928, + 930 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "1005", + "bibliography_indices": [ + 1005 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "1019", + "bibliography_indices": [ + 1019 + ] + }, + { + "row_index": 24, + "column_index": 10, + "value": "1006, 1008, and 1010", + "bibliography_indices": [ + 1006, + 1008, + 1010 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "1010", + "bibliography_indices": [ + 1010 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "1012–1014", + "bibliography_indices": [ + 1012, + 1013, + 1014 + ] + }, + { + "row_index": 27, + "column_index": 10, + "value": "1010", + "bibliography_indices": [ + 1010 + ] + } + ] + }, + { + "table_id": 23, + "table_key": "page_032_table_023", + "gold_csv": "../step2_table_reconstruction/tables/page_032_table_023/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "910, 1015, and 1016", + "bibliography_indices": [ + 910, + 1015, + 1016 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "1033 and 1034", + "bibliography_indices": [ + 1033, + 1034 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "1030 and 1031", + "bibliography_indices": [ + 1030, + 1031 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "817 and 1031", + "bibliography_indices": [ + 817, + 1031 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "1039", + "bibliography_indices": [ + 1039 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "1040", + "bibliography_indices": [ + 1040 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "1040", + "bibliography_indices": [ + 1040 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "1040", + "bibliography_indices": [ + 1040 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "1041", + "bibliography_indices": [ + 1041 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "1037", + "bibliography_indices": [ + 1037 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "1054", + "bibliography_indices": [ + 1054 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "1062", + "bibliography_indices": [ + 1062 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "821", + "bibliography_indices": [ + 821 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "1063", + "bibliography_indices": [ + 1063 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "1057 and 1058", + "bibliography_indices": [ + 1057, + 1058 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "1058", + "bibliography_indices": [ + 1058 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "1057", + "bibliography_indices": [ + 1057 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "1066", + "bibliography_indices": [ + 1066 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "1078", + "bibliography_indices": [ + 1078 + ] + }, + { + "row_index": 24, + "column_index": 10, + "value": "1083", + "bibliography_indices": [ + 1083 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "1088 and 1089", + "bibliography_indices": [ + 1088, + 1089 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "1090", + "bibliography_indices": [ + 1090 + ] + }, + { + "row_index": 28, + "column_index": 10, + "value": "1107", + "bibliography_indices": [ + 1107 + ] + }, + { + "row_index": 29, + "column_index": 10, + "value": "1107", + "bibliography_indices": [ + 1107 + ] + }, + { + "row_index": 30, + "column_index": 10, + "value": "1107", + "bibliography_indices": [ + 1107 + ] + }, + { + "row_index": 31, + "column_index": 10, + "value": "1107", + "bibliography_indices": [ + 1107 + ] + }, + { + "row_index": 32, + "column_index": 10, + "value": "1107", + "bibliography_indices": [ + 1107 + ] + }, + { + "row_index": 33, + "column_index": 10, + "value": "1107", + "bibliography_indices": [ + 1107 + ] + }, + { + "row_index": 34, + "column_index": 10, + "value": "1102 and 1103", + "bibliography_indices": [ + 1102, + 1103 + ] + }, + { + "row_index": 35, + "column_index": 10, + "value": "1100", + "bibliography_indices": [ + 1100 + ] + } + ] + }, + { + "table_id": 24, + "table_key": "page_033_table_024", + "gold_csv": "../step2_table_reconstruction/tables/page_033_table_024/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "1098–1100", + "bibliography_indices": [ + 1098, + 1099, + 1100 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "1108 and 1110", + "bibliography_indices": [ + 1108, + 1110 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "1109", + "bibliography_indices": [ + 1109 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "1139", + "bibliography_indices": [ + 1139 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "1151", + "bibliography_indices": [ + 1151 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "1153–1155", + "bibliography_indices": [ + 1153, + 1154, + 1155 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "1157 and 1160–1162", + "bibliography_indices": [ + 1157, + 1160, + 1161, + 1162 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "1163 and 1164", + "bibliography_indices": [ + 1163, + 1164 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "60, 282, 297, 318, 1149, 1157, 1160, 1161, 1186, 1190, 1192–1194, 1196, 1197, 1199, 1201, 1203, 1204, 1207–1210, 1213, 1215–1220, 1222, 1223, 1225, 1228, 1231–1233, 1235–1238, 1241, 1243, 1245, 1248, 1250, 1253, 1257, 1259, 1261–1265, and 2316–2318", + "bibliography_indices": [ + 60, + 282, + 297, + 318, + 1149, + 1157, + 1160, + 1161, + 1186, + 1190, + 1192, + 1193, + 1194, + 1196, + 1197, + 1199, + 1201, + 1203, + 1204, + 1207, + 1208, + 1209, + 1210, + 1213, + 1215, + 1216, + 1217, + 1218, + 1219, + 1220, + 1222, + 1223, + 1225, + 1228, + 1231, + 1232, + 1233, + 1235, + 1236, + 1237, + 1238, + 1241, + 1243, + 1245, + 1248, + 1250, + 1253, + 1257, + 1259, + 1261, + 1262, + 1263, + 1264, + 1265, + 2316, + 2317, + 2318 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "1200, 1214, 1246, 1247, and 2316", + "bibliography_indices": [ + 1200, + 1214, + 1246, + 1247, + 2316 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "812, 1226, 1229, 1246, 1247, and 1251", + "bibliography_indices": [ + 812, + 1226, + 1229, + 1246, + 1247, + 1251 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "1162, 1202, 1225, 1242, 1244, and 1248", + "bibliography_indices": [ + 1162, + 1202, + 1225, + 1242, + 1244, + 1248 + ] + } + ] + }, + { + "table_id": 25, + "table_key": "page_034_table_025", + "gold_csv": "../step2_table_reconstruction/tables/page_034_table_025/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "1149, 1211, and 1239", + "bibliography_indices": [ + 1149, + 1211, + 1239 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "1266", + "bibliography_indices": [ + 1266 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "1186", + "bibliography_indices": [ + 1186 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "1181", + "bibliography_indices": [ + 1181 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "1223, 1268, and 1269", + "bibliography_indices": [ + 1223, + 1268, + 1269 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "292", + "bibliography_indices": [ + 292 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "457", + "bibliography_indices": [ + 457 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "1193, 1208, and 1209", + "bibliography_indices": [ + 1193, + 1208, + 1209 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "1270–1272, 1274, and 2308", + "bibliography_indices": [ + 1270, + 1271, + 1272, + 1274, + 2308 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "1275", + "bibliography_indices": [ + 1275 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "1276 and 1278", + "bibliography_indices": [ + 1276, + 1278 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "458", + "bibliography_indices": [ + 458 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "1160, 1279, 1282, 1284, and 1285", + "bibliography_indices": [ + 1160, + 1279, + 1282, + 1284, + 1285 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "1368", + "bibliography_indices": [ + 1368 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "1368", + "bibliography_indices": [ + 1368 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "1373", + "bibliography_indices": [ + 1373 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "1370–1372", + "bibliography_indices": [ + 1370, + 1371, + 1372 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "1515", + "bibliography_indices": [ + 1515 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "1515", + "bibliography_indices": [ + 1515 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "1522", + "bibliography_indices": [ + 1522 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "1524", + "bibliography_indices": [ + 1524 + ] + }, + { + "row_index": 24, + "column_index": 10, + "value": "1524–1526", + "bibliography_indices": [ + 1524, + 1525, + 1526 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "1530 and 1531", + "bibliography_indices": [ + 1530, + 1531 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "683", + "bibliography_indices": [ + 683 + ] + } + ] + }, + { + "table_id": 26, + "table_key": "page_035_table_026", + "gold_csv": "../step2_table_reconstruction/tables/page_035_table_026/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 10, + "value": "128, 1536, and 1555", + "bibliography_indices": [ + 128, + 1536, + 1555 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "1563", + "bibliography_indices": [ + 1563 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "1537, 1538, 1544, and 1545", + "bibliography_indices": [ + 1537, + 1538, + 1544, + 1545 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "85, 1549, 1558, 1559, and 1561", + "bibliography_indices": [ + 85, + 1549, + 1558, + 1559, + 1561 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "140, 1539, 1540, 1548, 1554, 1556, and 1557", + "bibliography_indices": [ + 140, + 1539, + 1540, + 1548, + 1554, + 1556, + 1557 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "1539", + "bibliography_indices": [ + 1539 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "1547", + "bibliography_indices": [ + 1547 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "1544 and 1545", + "bibliography_indices": [ + 1544, + 1545 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "1569", + "bibliography_indices": [ + 1569 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "1568", + "bibliography_indices": [ + 1568 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "1567", + "bibliography_indices": [ + 1567 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "1570", + "bibliography_indices": [ + 1570 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "861 and 1588", + "bibliography_indices": [ + 861, + 1588 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "273", + "bibliography_indices": [ + 273 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "1594", + "bibliography_indices": [ + 1594 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "1599", + "bibliography_indices": [ + 1599 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "1587", + "bibliography_indices": [ + 1587 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "1587", + "bibliography_indices": [ + 1587 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "1571", + "bibliography_indices": [ + 1571 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "1574", + "bibliography_indices": [ + 1574 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "1571", + "bibliography_indices": [ + 1571 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "1577", + "bibliography_indices": [ + 1577 + ] + }, + { + "row_index": 24, + "column_index": 10, + "value": "1571", + "bibliography_indices": [ + 1571 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "1578", + "bibliography_indices": [ + 1578 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "2319", + "bibliography_indices": [ + 2319 + ] + }, + { + "row_index": 27, + "column_index": 10, + "value": "2319", + "bibliography_indices": [ + 2319 + ] + }, + { + "row_index": 28, + "column_index": 10, + "value": "1579", + "bibliography_indices": [ + 1579 + ] + }, + { + "row_index": 29, + "column_index": 10, + "value": "1580", + "bibliography_indices": [ + 1580 + ] + }, + { + "row_index": 30, + "column_index": 10, + "value": "1579", + "bibliography_indices": [ + 1579 + ] + }, + { + "row_index": 31, + "column_index": 10, + "value": "1580", + "bibliography_indices": [ + 1580 + ] + }, + { + "row_index": 32, + "column_index": 10, + "value": "1583 and 1584", + "bibliography_indices": [ + 1583, + 1584 + ] + }, + { + "row_index": 33, + "column_index": 10, + "value": "1578", + "bibliography_indices": [ + 1578 + ] + }, + { + "row_index": 34, + "column_index": 10, + "value": "1578", + "bibliography_indices": [ + 1578 + ] + }, + { + "row_index": 35, + "column_index": 10, + "value": "1620", + "bibliography_indices": [ + 1620 + ] + } + ] + }, + { + "table_id": 27, + "table_key": "page_036_table_027", + "gold_csv": "../step2_table_reconstruction/tables/page_036_table_027/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "1601 and 1602", + "bibliography_indices": [ + 1601, + 1602 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "1609", + "bibliography_indices": [ + 1609 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "1612 and 1613", + "bibliography_indices": [ + 1612, + 1613 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "1614", + "bibliography_indices": [ + 1614 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "1617 and 1619", + "bibliography_indices": [ + 1617, + 1619 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "1607", + "bibliography_indices": [ + 1607 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "1609", + "bibliography_indices": [ + 1609 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "1626", + "bibliography_indices": [ + 1626 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "1652, 1654, and 1692", + "bibliography_indices": [ + 1652, + 1654, + 1692 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "1687", + "bibliography_indices": [ + 1687 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "1693", + "bibliography_indices": [ + 1693 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "1695", + "bibliography_indices": [ + 1695 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "1753", + "bibliography_indices": [ + 1753 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "1757", + "bibliography_indices": [ + 1757 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "1759 and 1760", + "bibliography_indices": [ + 1759, + 1760 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "1761", + "bibliography_indices": [ + 1761 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "1761", + "bibliography_indices": [ + 1761 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "1812", + "bibliography_indices": [ + 1812 + ] + }, + { + "row_index": 24, + "column_index": 10, + "value": "747, 1802, and 1810", + "bibliography_indices": [ + 747, + 1802, + 1810 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "1369", + "bibliography_indices": [ + 1369 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "1808 and 1811", + "bibliography_indices": [ + 1808, + 1811 + ] + }, + { + "row_index": 27, + "column_index": 10, + "value": "1796, 1799, and 1801", + "bibliography_indices": [ + 1796, + 1799, + 1801 + ] + }, + { + "row_index": 28, + "column_index": 10, + "value": "1804 and 1805", + "bibliography_indices": [ + 1804, + 1805 + ] + }, + { + "row_index": 29, + "column_index": 10, + "value": "1799", + "bibliography_indices": [ + 1799 + ] + }, + { + "row_index": 30, + "column_index": 10, + "value": "1816", + "bibliography_indices": [ + 1816 + ] + }, + { + "row_index": 31, + "column_index": 10, + "value": "1804 and 1813", + "bibliography_indices": [ + 1804, + 1813 + ] + }, + { + "row_index": 32, + "column_index": 10, + "value": "1804", + "bibliography_indices": [ + 1804 + ] + }, + { + "row_index": 33, + "column_index": 10, + "value": "1820", + "bibliography_indices": [ + 1820 + ] + }, + { + "row_index": 34, + "column_index": 10, + "value": "1804, 1813, 1820, and 1821", + "bibliography_indices": [ + 1804, + 1813, + 1820, + 1821 + ] + } + ] + }, + { + "table_id": 28, + "table_key": "page_037_table_028", + "gold_csv": "../step2_table_reconstruction/tables/page_037_table_028/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "1826", + "bibliography_indices": [ + 1826 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "1828", + "bibliography_indices": [ + 1828 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "1822, 1823, and 1825", + "bibliography_indices": [ + 1822, + 1823, + 1825 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "1829", + "bibliography_indices": [ + 1829 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "1830", + "bibliography_indices": [ + 1830 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "44, 1088, and 1577", + "bibliography_indices": [ + 44, + 1088, + 1577 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "1088", + "bibliography_indices": [ + 1088 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "1833", + "bibliography_indices": [ + 1833 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "1835", + "bibliography_indices": [ + 1835 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "1835", + "bibliography_indices": [ + 1835 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "237, 1836, and 1837", + "bibliography_indices": [ + 237, + 1836, + 1837 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "1838", + "bibliography_indices": [ + 1838 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "1840", + "bibliography_indices": [ + 1840 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "1841", + "bibliography_indices": [ + 1841 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "1835", + "bibliography_indices": [ + 1835 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "1835", + "bibliography_indices": [ + 1835 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "1847", + "bibliography_indices": [ + 1847 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "1852", + "bibliography_indices": [ + 1852 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "1852", + "bibliography_indices": [ + 1852 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "1607", + "bibliography_indices": [ + 1607 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "1859", + "bibliography_indices": [ + 1859 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "1859", + "bibliography_indices": [ + 1859 + ] + }, + { + "row_index": 28, + "column_index": 10, + "value": "1861 and 1862", + "bibliography_indices": [ + 1861, + 1862 + ] + }, + { + "row_index": 29, + "column_index": 10, + "value": "1863", + "bibliography_indices": [ + 1863 + ] + }, + { + "row_index": 31, + "column_index": 10, + "value": "1864 and 1865", + "bibliography_indices": [ + 1864, + 1865 + ] + } + ] + }, + { + "table_id": 29, + "table_key": "page_038_table_029", + "gold_csv": "../step2_table_reconstruction/tables/page_038_table_029/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 10, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "1864 and 1866", + "bibliography_indices": [ + 1864, + 1866 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "1866", + "bibliography_indices": [ + 1866 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "1867", + "bibliography_indices": [ + 1867 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "1868 and 1869", + "bibliography_indices": [ + 1868, + 1869 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "1871 and 1873", + "bibliography_indices": [ + 1871, + 1873 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "1584 and 1864", + "bibliography_indices": [ + 1584, + 1864 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "1530 and 1531", + "bibliography_indices": [ + 1530, + 1531 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "1875", + "bibliography_indices": [ + 1875 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "1876", + "bibliography_indices": [ + 1876 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "1864", + "bibliography_indices": [ + 1864 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "1877", + "bibliography_indices": [ + 1877 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "1879 and 1880", + "bibliography_indices": [ + 1879, + 1880 + ] + }, + { + "row_index": 27, + "column_index": 10, + "value": "1897 and 1947", + "bibliography_indices": [ + 1897, + 1947 + ] + }, + { + "row_index": 28, + "column_index": 10, + "value": "1918, 1919, 1922, 1930, 1931, 1970, and 2320", + "bibliography_indices": [ + 1918, + 1919, + 1922, + 1930, + 1931, + 1970, + 2320 + ] + }, + { + "row_index": 29, + "column_index": 10, + "value": "1915, 1935, and 1974", + "bibliography_indices": [ + 1915, + 1935, + 1974 + ] + } + ] + }, + { + "table_id": 30, + "table_key": "page_039_table_030", + "gold_csv": "../step2_table_reconstruction/tables/page_039_table_030/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "1901", + "bibliography_indices": [ + 1901 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "1888", + "bibliography_indices": [ + 1888 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "1554, 1887, 1906, 1918, and 2321", + "bibliography_indices": [ + 1554, + 1887, + 1906, + 1918, + 2321 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "1559", + "bibliography_indices": [ + 1559 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "1556 and 1557", + "bibliography_indices": [ + 1556, + 1557 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "1566", + "bibliography_indices": [ + 1566 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "189, 1561, and 1959", + "bibliography_indices": [ + 189, + 1561, + 1959 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "1883, 1948, and 1971", + "bibliography_indices": [ + 1883, + 1948, + 1971 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "1917", + "bibliography_indices": [ + 1917 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "1970", + "bibliography_indices": [ + 1970 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "1558, 1884, and 1932", + "bibliography_indices": [ + 1558, + 1884, + 1932 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "1555", + "bibliography_indices": [ + 1555 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "1897", + "bibliography_indices": [ + 1897 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "1917", + "bibliography_indices": [ + 1917 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "1566 and 1901", + "bibliography_indices": [ + 1566, + 1901 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "1981", + "bibliography_indices": [ + 1981 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "1981", + "bibliography_indices": [ + 1981 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "1981", + "bibliography_indices": [ + 1981 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "1981", + "bibliography_indices": [ + 1981 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "1984", + "bibliography_indices": [ + 1984 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "1989 and 1990", + "bibliography_indices": [ + 1989, + 1990 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "1989 and 1990", + "bibliography_indices": [ + 1989, + 1990 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "1579", + "bibliography_indices": [ + 1579 + ] + }, + { + "row_index": 24, + "column_index": 10, + "value": "1991", + "bibliography_indices": [ + 1991 + ] + }, + { + "row_index": 25, + "column_index": 10, + "value": "1579", + "bibliography_indices": [ + 1579 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "1521 and 1991", + "bibliography_indices": [ + 1521, + 1991 + ] + }, + { + "row_index": 27, + "column_index": 10, + "value": "1993", + "bibliography_indices": [ + 1993 + ] + }, + { + "row_index": 28, + "column_index": 10, + "value": "1993", + "bibliography_indices": [ + 1993 + ] + }, + { + "row_index": 29, + "column_index": 10, + "value": "1994", + "bibliography_indices": [ + 1994 + ] + }, + { + "row_index": 30, + "column_index": 10, + "value": "1994", + "bibliography_indices": [ + 1994 + ] + }, + { + "row_index": 31, + "column_index": 10, + "value": "2322", + "bibliography_indices": [ + 2322 + ] + }, + { + "row_index": 32, + "column_index": 10, + "value": "684", + "bibliography_indices": [ + 684 + ] + }, + { + "row_index": 33, + "column_index": 10, + "value": "1867 and 2004", + "bibliography_indices": [ + 1867, + 2004 + ] + }, + { + "row_index": 34, + "column_index": 10, + "value": "2004", + "bibliography_indices": [ + 2004 + ] + }, + { + "row_index": 35, + "column_index": 10, + "value": "2001", + "bibliography_indices": [ + 2001 + ] + }, + { + "row_index": 36, + "column_index": 10, + "value": "2005", + "bibliography_indices": [ + 2005 + ] + }, + { + "row_index": 37, + "column_index": 10, + "value": "2006", + "bibliography_indices": [ + 2006 + ] + } + ] + }, + { + "table_id": 31, + "table_key": "page_040_table_031", + "gold_csv": "../step2_table_reconstruction/tables/page_040_table_031/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "1995", + "bibliography_indices": [ + 1995 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "908", + "bibliography_indices": [ + 908 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "908–911", + "bibliography_indices": [ + 908, + 909, + 910, + 911 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "2002", + "bibliography_indices": [ + 2002 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "355", + "bibliography_indices": [ + 355 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "355", + "bibliography_indices": [ + 355 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "1601 and 1602", + "bibliography_indices": [ + 1601, + 1602 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "362", + "bibliography_indices": [ + 362 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "250, 2011, 2023, and 2320", + "bibliography_indices": [ + 250, + 2011, + 2023, + 2320 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "2010 and 2016", + "bibliography_indices": [ + 2010, + 2016 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "2021", + "bibliography_indices": [ + 2021 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "1619 and 2041", + "bibliography_indices": [ + 1619, + 2041 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "2023", + "bibliography_indices": [ + 2023 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "1601, 2071, 2072, and 2082", + "bibliography_indices": [ + 1601, + 2071, + 2072, + 2082 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "2023 and 2081", + "bibliography_indices": [ + 2023, + 2081 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "2094", + "bibliography_indices": [ + 2094 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "2074 and 2323", + "bibliography_indices": [ + 2074, + 2323 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "2102", + "bibliography_indices": [ + 2102 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "963", + "bibliography_indices": [ + 963 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "1522 and 1932", + "bibliography_indices": [ + 1522, + 1932 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "472, 473, and 2310", + "bibliography_indices": [ + 472, + 473, + 2310 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "2006", + "bibliography_indices": [ + 2006 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "2007", + "bibliography_indices": [ + 2007 + ] + }, + { + "row_index": 24, + "column_index": 10, + "value": "2114", + "bibliography_indices": [ + 2114 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "2136", + "bibliography_indices": [ + 2136 + ] + }, + { + "row_index": 27, + "column_index": 10, + "value": "392, 1291, and 1883", + "bibliography_indices": [ + 392, + 1291, + 1883 + ] + }, + { + "row_index": 28, + "column_index": 10, + "value": "2130", + "bibliography_indices": [ + 2130 + ] + }, + { + "row_index": 29, + "column_index": 10, + "value": "2133", + "bibliography_indices": [ + 2133 + ] + }, + { + "row_index": 30, + "column_index": 10, + "value": "2137", + "bibliography_indices": [ + 2137 + ] + }, + { + "row_index": 31, + "column_index": 10, + "value": "2137", + "bibliography_indices": [ + 2137 + ] + }, + { + "row_index": 32, + "column_index": 10, + "value": "123, 1563, 2139, 2145, and 2146", + "bibliography_indices": [ + 123, + 1563, + 2139, + 2145, + 2146 + ] + } + ] + }, + { + "table_id": 32, + "table_key": "page_041_table_032", + "gold_csv": "../step2_table_reconstruction/tables/page_041_table_032/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 10, + "value": "2142", + "bibliography_indices": [ + 2142 + ] + }, + { + "row_index": 2, + "column_index": 10, + "value": "2135", + "bibliography_indices": [ + 2135 + ] + }, + { + "row_index": 3, + "column_index": 10, + "value": "2149", + "bibliography_indices": [ + 2149 + ] + }, + { + "row_index": 4, + "column_index": 10, + "value": "2148", + "bibliography_indices": [ + 2148 + ] + }, + { + "row_index": 5, + "column_index": 10, + "value": "2148", + "bibliography_indices": [ + 2148 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "2150", + "bibliography_indices": [ + 2150 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "918, 2152, and 2153", + "bibliography_indices": [ + 918, + 2152, + 2153 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "918, 1650, 2152, and 2155", + "bibliography_indices": [ + 918, + 1650, + 2152, + 2155 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "2156", + "bibliography_indices": [ + 2156 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "2156", + "bibliography_indices": [ + 2156 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "2157", + "bibliography_indices": [ + 2157 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "2158", + "bibliography_indices": [ + 2158 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "2220", + "bibliography_indices": [ + 2220 + ] + }, + { + "row_index": 15, + "column_index": 10, + "value": "2223", + "bibliography_indices": [ + 2223 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "2252", + "bibliography_indices": [ + 2252 + ] + }, + { + "row_index": 18, + "column_index": 10, + "value": "2248", + "bibliography_indices": [ + 2248 + ] + }, + { + "row_index": 20, + "column_index": 10, + "value": "2273", + "bibliography_indices": [ + 2273 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "2260", + "bibliography_indices": [ + 2260 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "2275", + "bibliography_indices": [ + 2275 + ] + }, + { + "row_index": 24, + "column_index": 10, + "value": "2275", + "bibliography_indices": [ + 2275 + ] + } + ] + }, + { + "table_id": 33, + "table_key": "page_048_table_033", + "gold_csv": "../step2_table_reconstruction/tables/page_048_table_033/gold.csv", + "reference_column_index": 8, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 8, + "value": "49", + "bibliography_indices": [ + 49 + ] + }, + { + "row_index": 3, + "column_index": 8, + "value": "50", + "bibliography_indices": [ + 50 + ] + }, + { + "row_index": 4, + "column_index": 8, + "value": "50", + "bibliography_indices": [ + 50 + ] + }, + { + "row_index": 6, + "column_index": 8, + "value": "477", + "bibliography_indices": [ + 477 + ] + }, + { + "row_index": 7, + "column_index": 8, + "value": "480", + "bibliography_indices": [ + 480 + ] + }, + { + "row_index": 8, + "column_index": 8, + "value": "484", + "bibliography_indices": [ + 484 + ] + }, + { + "row_index": 9, + "column_index": 8, + "value": "488", + "bibliography_indices": [ + 488 + ] + }, + { + "row_index": 10, + "column_index": 8, + "value": "489", + "bibliography_indices": [ + 489 + ] + }, + { + "row_index": 11, + "column_index": 8, + "value": "495", + "bibliography_indices": [ + 495 + ] + }, + { + "row_index": 12, + "column_index": 8, + "value": "501", + "bibliography_indices": [ + 501 + ] + }, + { + "row_index": 13, + "column_index": 8, + "value": "498", + "bibliography_indices": [ + 498 + ] + }, + { + "row_index": 14, + "column_index": 8, + "value": "498", + "bibliography_indices": [ + 498 + ] + }, + { + "row_index": 16, + "column_index": 8, + "value": "933, 938–940, 946, 951, 952, and 955", + "bibliography_indices": [ + 933, + 938, + 939, + 940, + 946, + 951, + 952, + 955 + ] + }, + { + "row_index": 17, + "column_index": 8, + "value": "934 and 935", + "bibliography_indices": [ + 934, + 935 + ] + }, + { + "row_index": 18, + "column_index": 8, + "value": "957", + "bibliography_indices": [ + 957 + ] + }, + { + "row_index": 19, + "column_index": 8, + "value": "958, 960, and 962–965", + "bibliography_indices": [ + 958, + 960, + 962, + 963, + 964, + 965 + ] + }, + { + "row_index": 20, + "column_index": 8, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 21, + "column_index": 8, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 22, + "column_index": 8, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 23, + "column_index": 8, + "value": "968", + "bibliography_indices": [ + 968 + ] + }, + { + "row_index": 24, + "column_index": 8, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 25, + "column_index": 8, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 26, + "column_index": 8, + "value": "975", + "bibliography_indices": [ + 975 + ] + }, + { + "row_index": 27, + "column_index": 8, + "value": "973 and 980", + "bibliography_indices": [ + 973, + 980 + ] + }, + { + "row_index": 28, + "column_index": 8, + "value": "988 and 989", + "bibliography_indices": [ + 988, + 989 + ] + }, + { + "row_index": 29, + "column_index": 8, + "value": "493 and 990", + "bibliography_indices": [ + 493, + 990 + ] + }, + { + "row_index": 30, + "column_index": 8, + "value": "989", + "bibliography_indices": [ + 989 + ] + }, + { + "row_index": 31, + "column_index": 8, + "value": "994", + "bibliography_indices": [ + 994 + ] + }, + { + "row_index": 32, + "column_index": 8, + "value": "989 and 995", + "bibliography_indices": [ + 989, + 995 + ] + }, + { + "row_index": 33, + "column_index": 8, + "value": "996 and 997", + "bibliography_indices": [ + 996, + 997 + ] + }, + { + "row_index": 35, + "column_index": 8, + "value": "1140", + "bibliography_indices": [ + 1140 + ] + }, + { + "row_index": 36, + "column_index": 8, + "value": "1141", + "bibliography_indices": [ + 1141 + ] + } + ] + }, + { + "table_id": 34, + "table_key": "page_049_table_034", + "gold_csv": "../step2_table_reconstruction/tables/page_049_table_034/gold.csv", + "reference_column_index": 8, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 8, + "value": "1376 and 1377", + "bibliography_indices": [ + 1376, + 1377 + ] + }, + { + "row_index": 3, + "column_index": 8, + "value": "1377", + "bibliography_indices": [ + 1377 + ] + }, + { + "row_index": 4, + "column_index": 8, + "value": "1378", + "bibliography_indices": [ + 1378 + ] + }, + { + "row_index": 5, + "column_index": 8, + "value": "1378", + "bibliography_indices": [ + 1378 + ] + }, + { + "row_index": 6, + "column_index": 8, + "value": "1379", + "bibliography_indices": [ + 1379 + ] + }, + { + "row_index": 7, + "column_index": 8, + "value": "1380", + "bibliography_indices": [ + 1380 + ] + }, + { + "row_index": 8, + "column_index": 8, + "value": "1384", + "bibliography_indices": [ + 1384 + ] + }, + { + "row_index": 9, + "column_index": 8, + "value": "1383", + "bibliography_indices": [ + 1383 + ] + }, + { + "row_index": 10, + "column_index": 8, + "value": "1385", + "bibliography_indices": [ + 1385 + ] + }, + { + "row_index": 11, + "column_index": 8, + "value": "1387", + "bibliography_indices": [ + 1387 + ] + }, + { + "row_index": 12, + "column_index": 8, + "value": "1387", + "bibliography_indices": [ + 1387 + ] + }, + { + "row_index": 14, + "column_index": 8, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 15, + "column_index": 8, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 16, + "column_index": 8, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 17, + "column_index": 8, + "value": "1623", + "bibliography_indices": [ + 1623 + ] + }, + { + "row_index": 19, + "column_index": 8, + "value": "933, 1630, and 1632", + "bibliography_indices": [ + 933, + 1630, + 1632 + ] + }, + { + "row_index": 20, + "column_index": 8, + "value": "1631", + "bibliography_indices": [ + 1631 + ] + }, + { + "row_index": 21, + "column_index": 8, + "value": "935 and 1630", + "bibliography_indices": [ + 935, + 1630 + ] + }, + { + "row_index": 22, + "column_index": 8, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 24, + "column_index": 8, + "value": "933 and 1635", + "bibliography_indices": [ + 933, + 1635 + ] + }, + { + "row_index": 25, + "column_index": 8, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 26, + "column_index": 8, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 27, + "column_index": 8, + "value": "1636", + "bibliography_indices": [ + 1636 + ] + }, + { + "row_index": 28, + "column_index": 8, + "value": "1638", + "bibliography_indices": [ + 1638 + ] + }, + { + "row_index": 30, + "column_index": 8, + "value": "1762", + "bibliography_indices": [ + 1762 + ] + }, + { + "row_index": 31, + "column_index": 8, + "value": "485", + "bibliography_indices": [ + 485 + ] + }, + { + "row_index": 32, + "column_index": 8, + "value": "485", + "bibliography_indices": [ + 485 + ] + }, + { + "row_index": 34, + "column_index": 8, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + }, + { + "row_index": 35, + "column_index": 8, + "value": "501 and 1622", + "bibliography_indices": [ + 501, + 1622 + ] + }, + { + "row_index": 36, + "column_index": 8, + "value": "2118", + "bibliography_indices": [ + 2118 + ] + }, + { + "row_index": 37, + "column_index": 8, + "value": "1622", + "bibliography_indices": [ + 1622 + ] + } + ] + }, + { + "table_id": 35, + "table_key": "page_050_table_035", + "gold_csv": "../step2_table_reconstruction/tables/page_050_table_035/gold.csv", + "reference_column_index": 8, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 8, + "value": "933", + "bibliography_indices": [ + 933 + ] + }, + { + "row_index": 3, + "column_index": 8, + "value": "2160 and 2161", + "bibliography_indices": [ + 2160, + 2161 + ] + }, + { + "row_index": 4, + "column_index": 8, + "value": "2160", + "bibliography_indices": [ + 2160 + ] + }, + { + "row_index": 5, + "column_index": 8, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 6, + "column_index": 8, + "value": "2163", + "bibliography_indices": [ + 2163 + ] + }, + { + "row_index": 7, + "column_index": 8, + "value": "2163", + "bibliography_indices": [ + 2163 + ] + }, + { + "row_index": 8, + "column_index": 8, + "value": "2164 and 2166", + "bibliography_indices": [ + 2164, + 2166 + ] + }, + { + "row_index": 9, + "column_index": 8, + "value": "2169", + "bibliography_indices": [ + 2169 + ] + }, + { + "row_index": 10, + "column_index": 8, + "value": "2163", + "bibliography_indices": [ + 2163 + ] + }, + { + "row_index": 11, + "column_index": 8, + "value": "2163", + "bibliography_indices": [ + 2163 + ] + }, + { + "row_index": 12, + "column_index": 8, + "value": "2170", + "bibliography_indices": [ + 2170 + ] + }, + { + "row_index": 13, + "column_index": 8, + "value": "2125–2127", + "bibliography_indices": [ + 2125, + 2126, + 2127 + ] + }, + { + "row_index": 14, + "column_index": 8, + "value": "2127", + "bibliography_indices": [ + 2127 + ] + }, + { + "row_index": 15, + "column_index": 8, + "value": "964, 2152, 2182, and 2183", + "bibliography_indices": [ + 964, + 2152, + 2182, + 2183 + ] + }, + { + "row_index": 16, + "column_index": 8, + "value": "2182 and 2183", + "bibliography_indices": [ + 2182, + 2183 + ] + }, + { + "row_index": 17, + "column_index": 8, + "value": "2184", + "bibliography_indices": [ + 2184 + ] + }, + { + "row_index": 18, + "column_index": 8, + "value": "2185", + "bibliography_indices": [ + 2185 + ] + }, + { + "row_index": 19, + "column_index": 8, + "value": "2187, 2188, 2192, and 2198", + "bibliography_indices": [ + 2187, + 2188, + 2192, + 2198 + ] + }, + { + "row_index": 20, + "column_index": 8, + "value": "2188", + "bibliography_indices": [ + 2188 + ] + }, + { + "row_index": 21, + "column_index": 8, + "value": "1669, 2191, 2192, and 2195", + "bibliography_indices": [ + 1669, + 2191, + 2192, + 2195 + ] + }, + { + "row_index": 22, + "column_index": 8, + "value": "2198", + "bibliography_indices": [ + 2198 + ] + }, + { + "row_index": 23, + "column_index": 8, + "value": "1671", + "bibliography_indices": [ + 1671 + ] + }, + { + "row_index": 25, + "column_index": 8, + "value": "2224", + "bibliography_indices": [ + 2224 + ] + }, + { + "row_index": 26, + "column_index": 8, + "value": "2225", + "bibliography_indices": [ + 2225 + ] + }, + { + "row_index": 27, + "column_index": 8, + "value": "944", + "bibliography_indices": [ + 944 + ] + }, + { + "row_index": 28, + "column_index": 8, + "value": "2356", + "bibliography_indices": [ + 2356 + ] + }, + { + "row_index": 29, + "column_index": 8, + "value": "2230", + "bibliography_indices": [ + 2230 + ] + }, + { + "row_index": 30, + "column_index": 8, + "value": "1067, 1689, and 2231", + "bibliography_indices": [ + 1067, + 1689, + 2231 + ] + }, + { + "row_index": 31, + "column_index": 8, + "value": "2235", + "bibliography_indices": [ + 2235 + ] + } + ] + }, + { + "table_id": 36, + "table_key": "page_051_table_036", + "gold_csv": "../step2_table_reconstruction/tables/page_051_table_036/gold.csv", + "reference_column_index": 10, + "reference_column_header": "Ref.", + "citation_cells": [ + { + "row_index": 5, + "column_index": 10, + "value": "955", + "bibliography_indices": [ + 955 + ] + }, + { + "row_index": 6, + "column_index": 10, + "value": "938", + "bibliography_indices": [ + 938 + ] + }, + { + "row_index": 7, + "column_index": 10, + "value": "944", + "bibliography_indices": [ + 944 + ] + }, + { + "row_index": 8, + "column_index": 10, + "value": "950", + "bibliography_indices": [ + 950 + ] + }, + { + "row_index": 9, + "column_index": 10, + "value": "938", + "bibliography_indices": [ + 938 + ] + }, + { + "row_index": 10, + "column_index": 10, + "value": "955", + "bibliography_indices": [ + 955 + ] + }, + { + "row_index": 11, + "column_index": 10, + "value": "938", + "bibliography_indices": [ + 938 + ] + }, + { + "row_index": 12, + "column_index": 10, + "value": "934", + "bibliography_indices": [ + 934 + ] + }, + { + "row_index": 13, + "column_index": 10, + "value": "935", + "bibliography_indices": [ + 935 + ] + }, + { + "row_index": 14, + "column_index": 10, + "value": "955", + "bibliography_indices": [ + 955 + ] + }, + { + "row_index": 16, + "column_index": 10, + "value": "968", + "bibliography_indices": [ + 968 + ] + }, + { + "row_index": 17, + "column_index": 10, + "value": "968", + "bibliography_indices": [ + 968 + ] + }, + { + "row_index": 19, + "column_index": 10, + "value": "967", + "bibliography_indices": [ + 967 + ] + }, + { + "row_index": 21, + "column_index": 10, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 22, + "column_index": 10, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 23, + "column_index": 10, + "value": "966", + "bibliography_indices": [ + 966 + ] + }, + { + "row_index": 26, + "column_index": 10, + "value": "960", + "bibliography_indices": [ + 960 + ] + }, + { + "row_index": 27, + "column_index": 10, + "value": "960", + "bibliography_indices": [ + 960 + ] + }, + { + "row_index": 28, + "column_index": 10, + "value": "960", + "bibliography_indices": [ + 960 + ] + }, + { + "row_index": 29, + "column_index": 10, + "value": "950", + "bibliography_indices": [ + 950 + ] + }, + { + "row_index": 30, + "column_index": 10, + "value": "960", + "bibliography_indices": [ + 960 + ] + }, + { + "row_index": 34, + "column_index": 10, + "value": "975", + "bibliography_indices": [ + 975 + ] + }, + { + "row_index": 35, + "column_index": 10, + "value": "973", + "bibliography_indices": [ + 973 + ] + }, + { + "row_index": 36, + "column_index": 10, + "value": "980", + "bibliography_indices": [ + 980 + ] + }, + { + "row_index": 37, + "column_index": 10, + "value": "975", + "bibliography_indices": [ + 975 + ] + }, + { + "row_index": 38, + "column_index": 10, + "value": "986", + "bibliography_indices": [ + 986 + ] + }, + { + "row_index": 39, + "column_index": 10, + "value": "976", + "bibliography_indices": [ + 976 + ] + }, + { + "row_index": 40, + "column_index": 10, + "value": "975", + "bibliography_indices": [ + 975 + ] + }, + { + "row_index": 42, + "column_index": 10, + "value": "996", + "bibliography_indices": [ + 996 + ] + }, + { + "row_index": 45, + "column_index": 10, + "value": "995", + "bibliography_indices": [ + 995 + ] + }, + { + "row_index": 46, + "column_index": 10, + "value": "989", + "bibliography_indices": [ + 989 + ] + }, + { + "row_index": 48, + "column_index": 10, + "value": "989", + "bibliography_indices": [ + 989 + ] + }, + { + "row_index": 50, + "column_index": 10, + "value": "986", + "bibliography_indices": [ + 986 + ] + }, + { + "row_index": 51, + "column_index": 10, + "value": "988", + "bibliography_indices": [ + 988 + ] + }, + { + "row_index": 52, + "column_index": 10, + "value": "989", + "bibliography_indices": [ + 989 + ] + } + ] + }, + { + "table_id": 37, + "table_key": "page_054_table_037", + "gold_csv": "../step2_table_reconstruction/tables/page_054_table_037/gold.csv", + "reference_column_index": 7, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 3, + "column_index": 7, + "value": "675, 676, 678, and 679", + "bibliography_indices": [ + 675, + 676, + 678, + 679 + ] + }, + { + "row_index": 5, + "column_index": 7, + "value": "999", + "bibliography_indices": [ + 999 + ] + }, + { + "row_index": 6, + "column_index": 7, + "value": "999", + "bibliography_indices": [ + 999 + ] + }, + { + "row_index": 7, + "column_index": 7, + "value": "999", + "bibliography_indices": [ + 999 + ] + }, + { + "row_index": 9, + "column_index": 7, + "value": "1144", + "bibliography_indices": [ + 1144 + ] + }, + { + "row_index": 10, + "column_index": 7, + "value": "1145 and 1146", + "bibliography_indices": [ + 1145, + 1146 + ] + }, + { + "row_index": 11, + "column_index": 7, + "value": "1147", + "bibliography_indices": [ + 1147 + ] + }, + { + "row_index": 13, + "column_index": 7, + "value": "1288", + "bibliography_indices": [ + 1288 + ] + }, + { + "row_index": 14, + "column_index": 7, + "value": "1289", + "bibliography_indices": [ + 1289 + ] + }, + { + "row_index": 15, + "column_index": 7, + "value": "1300 and 1301", + "bibliography_indices": [ + 1300, + 1301 + ] + }, + { + "row_index": 16, + "column_index": 7, + "value": "84, 1290–1292, 1295, 1297–1299, 1302, 1304, and 2134", + "bibliography_indices": [ + 84, + 1290, + 1291, + 1292, + 1295, + 1297, + 1298, + 1299, + 1302, + 1304, + 2134 + ] + }, + { + "row_index": 17, + "column_index": 7, + "value": "1304", + "bibliography_indices": [ + 1304 + ] + }, + { + "row_index": 18, + "column_index": 7, + "value": "1305", + "bibliography_indices": [ + 1305 + ] + }, + { + "row_index": 19, + "column_index": 7, + "value": "1308 and 1311", + "bibliography_indices": [ + 1308, + 1311 + ] + }, + { + "row_index": 20, + "column_index": 7, + "value": "1313 and 1314", + "bibliography_indices": [ + 1313, + 1314 + ] + }, + { + "row_index": 21, + "column_index": 7, + "value": "1306", + "bibliography_indices": [ + 1306 + ] + }, + { + "row_index": 22, + "column_index": 7, + "value": "1309", + "bibliography_indices": [ + 1309 + ] + }, + { + "row_index": 23, + "column_index": 7, + "value": "1194", + "bibliography_indices": [ + 1194 + ] + }, + { + "row_index": 24, + "column_index": 7, + "value": "1317 and 1318", + "bibliography_indices": [ + 1317, + 1318 + ] + }, + { + "row_index": 25, + "column_index": 7, + "value": "1215", + "bibliography_indices": [ + 1215 + ] + }, + { + "row_index": 26, + "column_index": 7, + "value": "1320", + "bibliography_indices": [ + 1320 + ] + }, + { + "row_index": 27, + "column_index": 7, + "value": "1292, 1295, and 1297", + "bibliography_indices": [ + 1292, + 1295, + 1297 + ] + }, + { + "row_index": 28, + "column_index": 7, + "value": "1279, 1304, and 1322", + "bibliography_indices": [ + 1279, + 1304, + 1322 + ] + }, + { + "row_index": 29, + "column_index": 7, + "value": "1304", + "bibliography_indices": [ + 1304 + ] + }, + { + "row_index": 31, + "column_index": 7, + "value": "1509", + "bibliography_indices": [ + 1509 + ] + }, + { + "row_index": 32, + "column_index": 7, + "value": "1509", + "bibliography_indices": [ + 1509 + ] + }, + { + "row_index": 33, + "column_index": 7, + "value": "675 and 1512", + "bibliography_indices": [ + 675, + 1512 + ] + } + ] + }, + { + "table_id": 38, + "table_key": "page_055_table_038", + "gold_csv": "../step2_table_reconstruction/tables/page_055_table_038/gold.csv", + "reference_column_index": 7, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 7, + "value": "1707", + "bibliography_indices": [ + 1707 + ] + }, + { + "row_index": 3, + "column_index": 7, + "value": "1300", + "bibliography_indices": [ + 1300 + ] + }, + { + "row_index": 4, + "column_index": 7, + "value": "1300", + "bibliography_indices": [ + 1300 + ] + }, + { + "row_index": 5, + "column_index": 7, + "value": "1709, 1710, and 1713", + "bibliography_indices": [ + 1709, + 1710, + 1713 + ] + }, + { + "row_index": 6, + "column_index": 7, + "value": "1714", + "bibliography_indices": [ + 1714 + ] + }, + { + "row_index": 8, + "column_index": 7, + "value": "1763", + "bibliography_indices": [ + 1763 + ] + }, + { + "row_index": 9, + "column_index": 7, + "value": "1178", + "bibliography_indices": [ + 1178 + ] + }, + { + "row_index": 10, + "column_index": 7, + "value": "1766, 1767, and 1772", + "bibliography_indices": [ + 1766, + 1767, + 1772 + ] + }, + { + "row_index": 11, + "column_index": 7, + "value": "1768, 1769, and 1771", + "bibliography_indices": [ + 1768, + 1769, + 1771 + ] + }, + { + "row_index": 13, + "column_index": 7, + "value": "1829", + "bibliography_indices": [ + 1829 + ] + }, + { + "row_index": 14, + "column_index": 7, + "value": "2366", + "bibliography_indices": [ + 2366 + ] + }, + { + "row_index": 15, + "column_index": 7, + "value": "2366", + "bibliography_indices": [ + 2366 + ] + }, + { + "row_index": 17, + "column_index": 7, + "value": "1509", + "bibliography_indices": [ + 1509 + ] + }, + { + "row_index": 18, + "column_index": 7, + "value": "675 and 1831", + "bibliography_indices": [ + 675, + 1831 + ] + }, + { + "row_index": 20, + "column_index": 7, + "value": "1857", + "bibliography_indices": [ + 1857 + ] + }, + { + "row_index": 22, + "column_index": 7, + "value": "2238", + "bibliography_indices": [ + 2238 + ] + }, + { + "row_index": 23, + "column_index": 7, + "value": "2239", + "bibliography_indices": [ + 2239 + ] + }, + { + "row_index": 25, + "column_index": 7, + "value": "2277", + "bibliography_indices": [ + 2277 + ] + }, + { + "row_index": 26, + "column_index": 7, + "value": "2279", + "bibliography_indices": [ + 2279 + ] + }, + { + "row_index": 29, + "column_index": 7, + "value": "1323, 1327, 1331, and 1335–1337", + "bibliography_indices": [ + 1323, + 1327, + 1331, + 1335, + 1336, + 1337 + ] + }, + { + "row_index": 30, + "column_index": 7, + "value": "1339", + "bibliography_indices": [ + 1339 + ] + }, + { + "row_index": 31, + "column_index": 7, + "value": "1323, 1325, and 1327", + "bibliography_indices": [ + 1323, + 1325, + 1327 + ] + }, + { + "row_index": 32, + "column_index": 7, + "value": "1313, 1314, 1352, and 1354", + "bibliography_indices": [ + 1313, + 1314, + 1352, + 1354 + ] + }, + { + "row_index": 33, + "column_index": 7, + "value": "1350 and 1352", + "bibliography_indices": [ + 1350, + 1352 + ] + }, + { + "row_index": 34, + "column_index": 7, + "value": "1342–1344", + "bibliography_indices": [ + 1342, + 1343, + 1344 + ] + } + ] + }, + { + "table_id": 39, + "table_key": "page_056_table_039", + "gold_csv": "../step2_table_reconstruction/tables/page_056_table_039/gold.csv", + "reference_column_index": 7, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 7, + "value": "1715, 1717, 1718, and 1720", + "bibliography_indices": [ + 1715, + 1717, + 1718, + 1720 + ] + }, + { + "row_index": 3, + "column_index": 7, + "value": "1722", + "bibliography_indices": [ + 1722 + ] + }, + { + "row_index": 6, + "column_index": 7, + "value": "69 and 70", + "bibliography_indices": [ + 69, + 70 + ] + }, + { + "row_index": 8, + "column_index": 7, + "value": "1323, 1327, and 1359", + "bibliography_indices": [ + 1323, + 1327, + 1359 + ] + }, + { + "row_index": 9, + "column_index": 7, + "value": "1363 and 1365", + "bibliography_indices": [ + 1363, + 1365 + ] + }, + { + "row_index": 10, + "column_index": 7, + "value": "1323 and 1327", + "bibliography_indices": [ + 1323, + 1327 + ] + }, + { + "row_index": 11, + "column_index": 7, + "value": "1361", + "bibliography_indices": [ + 1361 + ] + }, + { + "row_index": 12, + "column_index": 7, + "value": "1362", + "bibliography_indices": [ + 1362 + ] + }, + { + "row_index": 14, + "column_index": 7, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 16, + "column_index": 7, + "value": "70, 1043, 1046, 1723, 1724, 1726, 1730, and 1731", + "bibliography_indices": [ + 70, + 1043, + 1046, + 1723, + 1724, + 1726, + 1730, + 1731 + ] + }, + { + "row_index": 17, + "column_index": 7, + "value": "1720", + "bibliography_indices": [ + 1720 + ] + }, + { + "row_index": 18, + "column_index": 7, + "value": "1367 and 1749", + "bibliography_indices": [ + 1367, + 1749 + ] + }, + { + "row_index": 19, + "column_index": 7, + "value": "1367 and 1748–1750", + "bibliography_indices": [ + 1367, + 1748, + 1749, + 1750 + ] + }, + { + "row_index": 21, + "column_index": 7, + "value": "1148", + "bibliography_indices": [ + 1148 + ] + }, + { + "row_index": 22, + "column_index": 7, + "value": "534", + "bibliography_indices": [ + 534 + ] + }, + { + "row_index": 24, + "column_index": 7, + "value": "1748 and 1750", + "bibliography_indices": [ + 1748, + 1750 + ] + } + ] + }, + { + "table_id": 40, + "table_key": "page_059_table_040", + "gold_csv": "../step2_table_reconstruction/tables/page_059_table_040/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 6, + "value": "71 and 72", + "bibliography_indices": [ + 71, + 72 + ] + }, + { + "row_index": 4, + "column_index": 6, + "value": "548", + "bibliography_indices": [ + 548 + ] + }, + { + "row_index": 5, + "column_index": 6, + "value": "548", + "bibliography_indices": [ + 548 + ] + }, + { + "row_index": 6, + "column_index": 6, + "value": "542 and 543", + "bibliography_indices": [ + 542, + 543 + ] + }, + { + "row_index": 7, + "column_index": 6, + "value": "543", + "bibliography_indices": [ + 543 + ] + }, + { + "row_index": 9, + "column_index": 6, + "value": "1053", + "bibliography_indices": [ + 1053 + ] + }, + { + "row_index": 11, + "column_index": 6, + "value": "1053", + "bibliography_indices": [ + 1053 + ] + }, + { + "row_index": 12, + "column_index": 6, + "value": "1067", + "bibliography_indices": [ + 1067 + ] + }, + { + "row_index": 13, + "column_index": 6, + "value": "1071", + "bibliography_indices": [ + 1071 + ] + }, + { + "row_index": 14, + "column_index": 6, + "value": "1073", + "bibliography_indices": [ + 1073 + ] + }, + { + "row_index": 15, + "column_index": 6, + "value": "1076", + "bibliography_indices": [ + 1076 + ] + }, + { + "row_index": 16, + "column_index": 6, + "value": "1077", + "bibliography_indices": [ + 1077 + ] + }, + { + "row_index": 18, + "column_index": 6, + "value": "1053", + "bibliography_indices": [ + 1053 + ] + }, + { + "row_index": 19, + "column_index": 6, + "value": "1092", + "bibliography_indices": [ + 1092 + ] + }, + { + "row_index": 20, + "column_index": 6, + "value": "1094", + "bibliography_indices": [ + 1094 + ] + }, + { + "row_index": 22, + "column_index": 6, + "value": "1114", + "bibliography_indices": [ + 1114 + ] + }, + { + "row_index": 23, + "column_index": 6, + "value": "1113 and 1114", + "bibliography_indices": [ + 1113, + 1114 + ] + }, + { + "row_index": 24, + "column_index": 6, + "value": "2374", + "bibliography_indices": [ + 2374 + ] + }, + { + "row_index": 25, + "column_index": 6, + "value": "1115", + "bibliography_indices": [ + 1115 + ] + }, + { + "row_index": 26, + "column_index": 6, + "value": "1141", + "bibliography_indices": [ + 1141 + ] + }, + { + "row_index": 27, + "column_index": 6, + "value": "1124", + "bibliography_indices": [ + 1124 + ] + }, + { + "row_index": 28, + "column_index": 6, + "value": "1138", + "bibliography_indices": [ + 1138 + ] + }, + { + "row_index": 29, + "column_index": 6, + "value": "1138", + "bibliography_indices": [ + 1138 + ] + }, + { + "row_index": 30, + "column_index": 6, + "value": "1138", + "bibliography_indices": [ + 1138 + ] + }, + { + "row_index": 31, + "column_index": 6, + "value": "1138", + "bibliography_indices": [ + 1138 + ] + }, + { + "row_index": 32, + "column_index": 6, + "value": "1138", + "bibliography_indices": [ + 1138 + ] + }, + { + "row_index": 33, + "column_index": 6, + "value": "1126", + "bibliography_indices": [ + 1126 + ] + }, + { + "row_index": 34, + "column_index": 6, + "value": "1092", + "bibliography_indices": [ + 1092 + ] + }, + { + "row_index": 35, + "column_index": 6, + "value": "1116", + "bibliography_indices": [ + 1116 + ] + }, + { + "row_index": 36, + "column_index": 6, + "value": "1119, 1120, and 1122", + "bibliography_indices": [ + 1119, + 1120, + 1122 + ] + }, + { + "row_index": 37, + "column_index": 6, + "value": "1123", + "bibliography_indices": [ + 1123 + ] + }, + { + "row_index": 38, + "column_index": 6, + "value": "1132", + "bibliography_indices": [ + 1132 + ] + }, + { + "row_index": 39, + "column_index": 6, + "value": "1053 and 1067", + "bibliography_indices": [ + 1053, + 1067 + ] + }, + { + "row_index": 40, + "column_index": 6, + "value": "1127", + "bibliography_indices": [ + 1127 + ] + }, + { + "row_index": 42, + "column_index": 6, + "value": "1149", + "bibliography_indices": [ + 1149 + ] + }, + { + "row_index": 44, + "column_index": 6, + "value": "1494", + "bibliography_indices": [ + 1494 + ] + }, + { + "row_index": 46, + "column_index": 6, + "value": "1634", + "bibliography_indices": [ + 1634 + ] + }, + { + "row_index": 48, + "column_index": 6, + "value": "1641", + "bibliography_indices": [ + 1641 + ] + }, + { + "row_index": 49, + "column_index": 6, + "value": "1643, 1646, 1647, and 1650", + "bibliography_indices": [ + 1643, + 1646, + 1647, + 1650 + ] + }, + { + "row_index": 50, + "column_index": 6, + "value": "1649", + "bibliography_indices": [ + 1649 + ] + }, + { + "row_index": 51, + "column_index": 6, + "value": "1652, 1654, and 1687", + "bibliography_indices": [ + 1652, + 1654, + 1687 + ] + }, + { + "row_index": 52, + "column_index": 6, + "value": "1669", + "bibliography_indices": [ + 1669 + ] + }, + { + "row_index": 53, + "column_index": 6, + "value": "1650, 1661, 1662, 1666, and 1670", + "bibliography_indices": [ + 1650, + 1661, + 1662, + 1666, + 1670 + ] + }, + { + "row_index": 54, + "column_index": 6, + "value": "900", + "bibliography_indices": [ + 900 + ] + }, + { + "row_index": 55, + "column_index": 6, + "value": "994 and 1671", + "bibliography_indices": [ + 994, + 1671 + ] + } + ] + }, + { + "table_id": 41, + "table_key": "page_060_table_041", + "gold_csv": "../step2_table_reconstruction/tables/page_060_table_041/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 1, + "column_index": 6, + "value": "906, 1672, 1673, and 1677", + "bibliography_indices": [ + 906, + 1672, + 1673, + 1677 + ] + }, + { + "row_index": 2, + "column_index": 6, + "value": "1680", + "bibliography_indices": [ + 1680 + ] + }, + { + "row_index": 3, + "column_index": 6, + "value": "1685 and 1686", + "bibliography_indices": [ + 1685, + 1686 + ] + }, + { + "row_index": 4, + "column_index": 6, + "value": "1688", + "bibliography_indices": [ + 1688 + ] + }, + { + "row_index": 5, + "column_index": 6, + "value": "1689", + "bibliography_indices": [ + 1689 + ] + }, + { + "row_index": 7, + "column_index": 6, + "value": "1694", + "bibliography_indices": [ + 1694 + ] + }, + { + "row_index": 9, + "column_index": 6, + "value": "1702", + "bibliography_indices": [ + 1702 + ] + }, + { + "row_index": 10, + "column_index": 6, + "value": "1696 and 1697", + "bibliography_indices": [ + 1696, + 1697 + ] + }, + { + "row_index": 11, + "column_index": 6, + "value": "1696", + "bibliography_indices": [ + 1696 + ] + }, + { + "row_index": 12, + "column_index": 6, + "value": "1684", + "bibliography_indices": [ + 1684 + ] + }, + { + "row_index": 13, + "column_index": 6, + "value": "2375", + "bibliography_indices": [ + 2375 + ] + }, + { + "row_index": 15, + "column_index": 6, + "value": "1705", + "bibliography_indices": [ + 1705 + ] + }, + { + "row_index": 16, + "column_index": 6, + "value": "1811", + "bibliography_indices": [ + 1811 + ] + }, + { + "row_index": 18, + "column_index": 6, + "value": "534", + "bibliography_indices": [ + 534 + ] + }, + { + "row_index": 20, + "column_index": 6, + "value": "685, 2124, and 2165", + "bibliography_indices": [ + 685, + 2124, + 2165 + ] + }, + { + "row_index": 21, + "column_index": 6, + "value": "2125–2127", + "bibliography_indices": [ + 2125, + 2126, + 2127 + ] + }, + { + "row_index": 23, + "column_index": 6, + "value": "2208", + "bibliography_indices": [ + 2208 + ] + }, + { + "row_index": 24, + "column_index": 6, + "value": "187 and 309", + "bibliography_indices": [ + 187, + 309 + ] + }, + { + "row_index": 25, + "column_index": 6, + "value": "2201 and 2202", + "bibliography_indices": [ + 2201, + 2202 + ] + }, + { + "row_index": 26, + "column_index": 6, + "value": "2202", + "bibliography_indices": [ + 2202 + ] + }, + { + "row_index": 28, + "column_index": 6, + "value": "276, 832, 2240, and 2243", + "bibliography_indices": [ + 276, + 832, + 2240, + 2243 + ] + }, + { + "row_index": 29, + "column_index": 6, + "value": "2252", + "bibliography_indices": [ + 2252 + ] + }, + { + "row_index": 30, + "column_index": 6, + "value": "2246", + "bibliography_indices": [ + 2246 + ] + }, + { + "row_index": 31, + "column_index": 6, + "value": "2248 and 2249", + "bibliography_indices": [ + 2248, + 2249 + ] + }, + { + "row_index": 32, + "column_index": 6, + "value": "2249", + "bibliography_indices": [ + 2249 + ] + }, + { + "row_index": 33, + "column_index": 6, + "value": "2250", + "bibliography_indices": [ + 2250 + ] + }, + { + "row_index": 35, + "column_index": 6, + "value": "295, 1644, 2243, 2253, 2255, 2260, 2262, and 2270", + "bibliography_indices": [ + 295, + 1644, + 2243, + 2253, + 2255, + 2260, + 2262, + 2270 + ] + }, + { + "row_index": 36, + "column_index": 6, + "value": "2260", + "bibliography_indices": [ + 2260 + ] + }, + { + "row_index": 37, + "column_index": 6, + "value": "2273", + "bibliography_indices": [ + 2273 + ] + } + ] + }, + { + "table_id": 42, + "table_key": "page_061_table_042", + "gold_csv": "../step2_table_reconstruction/tables/page_061_table_042/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 3, + "column_index": 6, + "value": "1394", + "bibliography_indices": [ + 1394 + ] + }, + { + "row_index": 4, + "column_index": 6, + "value": "516 and 1392", + "bibliography_indices": [ + 516, + 1392 + ] + }, + { + "row_index": 5, + "column_index": 6, + "value": "1395", + "bibliography_indices": [ + 1395 + ] + }, + { + "row_index": 7, + "column_index": 6, + "value": "1773", + "bibliography_indices": [ + 1773 + ] + }, + { + "row_index": 8, + "column_index": 6, + "value": "1775 and 1776", + "bibliography_indices": [ + 1775, + 1776 + ] + }, + { + "row_index": 11, + "column_index": 6, + "value": "513", + "bibliography_indices": [ + 513 + ] + }, + { + "row_index": 12, + "column_index": 6, + "value": "520", + "bibliography_indices": [ + 520 + ] + }, + { + "row_index": 13, + "column_index": 6, + "value": "522", + "bibliography_indices": [ + 522 + ] + }, + { + "row_index": 14, + "column_index": 6, + "value": "516 and 1426", + "bibliography_indices": [ + 516, + 1426 + ] + }, + { + "row_index": 15, + "column_index": 6, + "value": "516", + "bibliography_indices": [ + 516 + ] + }, + { + "row_index": 16, + "column_index": 6, + "value": "527", + "bibliography_indices": [ + 527 + ] + }, + { + "row_index": 17, + "column_index": 6, + "value": "525", + "bibliography_indices": [ + 525 + ] + }, + { + "row_index": 18, + "column_index": 6, + "value": "528–532", + "bibliography_indices": [ + 528, + 529, + 530, + 531, + 532 + ] + }, + { + "row_index": 20, + "column_index": 6, + "value": "1052", + "bibliography_indices": [ + 1052 + ] + }, + { + "row_index": 22, + "column_index": 6, + "value": "1397, 1399, and 1411", + "bibliography_indices": [ + 1397, + 1399, + 1411 + ] + }, + { + "row_index": 23, + "column_index": 6, + "value": "1413 and 1414", + "bibliography_indices": [ + 1413, + 1414 + ] + }, + { + "row_index": 24, + "column_index": 6, + "value": "1413 and 1414", + "bibliography_indices": [ + 1413, + 1414 + ] + }, + { + "row_index": 25, + "column_index": 6, + "value": "1417, 1420, 1433, and 1438", + "bibliography_indices": [ + 1417, + 1420, + 1433, + 1438 + ] + }, + { + "row_index": 26, + "column_index": 6, + "value": "1467", + "bibliography_indices": [ + 1467 + ] + }, + { + "row_index": 27, + "column_index": 6, + "value": "516, 1426, 1439, and 1463", + "bibliography_indices": [ + 516, + 1426, + 1439, + 1463 + ] + }, + { + "row_index": 28, + "column_index": 6, + "value": "1394", + "bibliography_indices": [ + 1394 + ] + }, + { + "row_index": 29, + "column_index": 6, + "value": "1441", + "bibliography_indices": [ + 1441 + ] + }, + { + "row_index": 30, + "column_index": 6, + "value": "516", + "bibliography_indices": [ + 516 + ] + }, + { + "row_index": 31, + "column_index": 6, + "value": "1470 and 1474", + "bibliography_indices": [ + 1470, + 1474 + ] + }, + { + "row_index": 32, + "column_index": 6, + "value": "1468", + "bibliography_indices": [ + 1468 + ] + }, + { + "row_index": 33, + "column_index": 6, + "value": "1434", + "bibliography_indices": [ + 1434 + ] + }, + { + "row_index": 34, + "column_index": 6, + "value": "514", + "bibliography_indices": [ + 514 + ] + }, + { + "row_index": 35, + "column_index": 6, + "value": "1438", + "bibliography_indices": [ + 1438 + ] + }, + { + "row_index": 36, + "column_index": 6, + "value": "1486", + "bibliography_indices": [ + 1486 + ] + }, + { + "row_index": 37, + "column_index": 6, + "value": "527", + "bibliography_indices": [ + 527 + ] + }, + { + "row_index": 38, + "column_index": 6, + "value": "514", + "bibliography_indices": [ + 514 + ] + }, + { + "row_index": 39, + "column_index": 6, + "value": "1490", + "bibliography_indices": [ + 1490 + ] + }, + { + "row_index": 40, + "column_index": 6, + "value": "1491", + "bibliography_indices": [ + 1491 + ] + }, + { + "row_index": 42, + "column_index": 6, + "value": "1399 and 1411", + "bibliography_indices": [ + 1399, + 1411 + ] + }, + { + "row_index": 43, + "column_index": 6, + "value": "1775, 1776, 1788, and 1789", + "bibliography_indices": [ + 1775, + 1776, + 1788, + 1789 + ] + }, + { + "row_index": 44, + "column_index": 6, + "value": "1394", + "bibliography_indices": [ + 1394 + ] + }, + { + "row_index": 47, + "column_index": 6, + "value": "534", + "bibliography_indices": [ + 534 + ] + }, + { + "row_index": 49, + "column_index": 6, + "value": "534", + "bibliography_indices": [ + 534 + ] + } + ] + }, + { + "table_id": 43, + "table_key": "page_062_table_043", + "gold_csv": "../step2_table_reconstruction/tables/page_062_table_043/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 6, + "value": "534", + "bibliography_indices": [ + 534 + ] + } + ] + }, + { + "table_id": 44, + "table_key": "page_062_table_044", + "gold_csv": "../step2_table_reconstruction/tables/page_062_table_044/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "citation_cells": [ + { + "row_index": 2, + "column_index": 6, + "value": "66 and 67", + "bibliography_indices": [ + 66, + 67 + ] + }, + { + "row_index": 4, + "column_index": 6, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 5, + "column_index": 6, + "value": "67 and 681", + "bibliography_indices": [ + 67, + 681 + ] + }, + { + "row_index": 6, + "column_index": 6, + "value": "68", + "bibliography_indices": [ + 68 + ] + }, + { + "row_index": 8, + "column_index": 6, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 10, + "column_index": 6, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 12, + "column_index": 6, + "value": "1534", + "bibliography_indices": [ + 1534 + ] + }, + { + "row_index": 14, + "column_index": 6, + "value": "1858", + "bibliography_indices": [ + 1858 + ] + } + ] + } + ], + "tables_without_explicit_reference_column": [] +} diff --git a/Miikkulainen_2013/step6_reference_resolution/gold.json b/Miikkulainen_2013/step6_reference_resolution/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..7045b1f35e89db86ef8524608991e68f487fac24 --- /dev/null +++ b/Miikkulainen_2013/step6_reference_resolution/gold.json @@ -0,0 +1,36489 @@ +{ + "paper": "P251", + "status": "validated", + "source_independent_of_step6": true, + "gold_source": "authoritative LaTeX bibliography + BibTeX", + "record_count": 2280, + "records": [ + { + "paper": "P251", + "gold_index": 41, + "step4_index": 41, + "raw_reference": "R. L. Puurunen, Appl. Surf. Sci. 245, 6 (2005).", + "bibtex_key": "Puurunen2005a", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminium oxide from trimethylaluminium and water", + "gold_authors": "R. L. Puurunen", + "gold_year": "2005", + "gold_venue": "Appl. Surf. Sci.", + "gold_volume": "245", + "gold_issue": "", + "gold_pages": "6-10" + }, + { + "paper": "P251", + "gold_index": 43, + "step4_index": 43, + "raw_reference": "D. Hausmann, J. Becker, S. L. Wang, and R. G. Gordon, Science 298, 402 (2002).", + "bibtex_key": "Hausmann2002", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Rapid vapor deposition of highly conformal silica nanolaminates", + "gold_authors": "D. Hausmann and J. Becker and S. L. Wang and R. G. Gordon", + "gold_year": "2002", + "gold_venue": "Science", + "gold_volume": "298", + "gold_issue": "", + "gold_pages": "402-406" + }, + { + "paper": "P251", + "gold_index": 44, + "step4_index": 44, + "raw_reference": "T. Aaltonen, M. Alnes, O. Nilsen, L. Costelle, and H. Fjellva˚g, J. Mater. Chem. 20, 2877 (2010).", + "bibtex_key": "Aaltonen2010", + "source_entry_type": "article", + "gold_doi": "10.1039/b923490j", + "gold_title": "Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition", + "gold_authors": "Aaltonen, Titta and Alnes, Mari and Nilsen, Ola and Costelle, Leila and Fjellv g, Helmer", + "gold_year": "2010", + "gold_venue": "J. Mater. Chem.", + "gold_volume": "20", + "gold_issue": "14", + "gold_pages": "2877-2881" + }, + { + "paper": "P251", + "gold_index": 45, + "step4_index": 45, + "raw_reference": "M. Putkonen, T. Aaltonen, M. Alnes, T. Sajavaara, O. Nilsen, and H. Fjellva˚g, J. Mater. Chem. 19, 8767 (2009).", + "bibtex_key": "Putkonen2009", + "source_entry_type": "article", + "gold_doi": "10.1039/b913466b", + "gold_title": "Atomic layer deposition of lithium containing thin films", + "gold_authors": "Putkonen, Matti and Aaltonen, Titta and Alnes, Mari and Sajavaara, Timo and Nilsen, Ola and Fjellv g, Helmer", + "gold_year": "2009", + "gold_venue": "J. Mater. Chem.", + "gold_volume": "19", + "gold_issue": "46", + "gold_pages": "8767-8771" + }, + { + "paper": "P251", + "gold_index": 46, + "step4_index": 46, + "raw_reference": "S. I. Kol’tsov, T. V. Tuz, and A. N. Volkova, Zh. Prikl. Khim. 52, 2196 (1979) [J. Appl. Chem. USSR 52, 2074 (1979)].", + "bibtex_key": "Koltsov1979", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Molecular layering of boron oxide on the surface of silica", + "gold_authors": "S. I. Kol'tsov and T. V. Tuz and A. N. Volkova", + "gold_year": "1979", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "52", + "gold_issue": "", + "gold_pages": "2196--2199" + }, + { + "paper": "P251", + "gold_index": 47, + "step4_index": 47, + "raw_reference": "M. Putkonen and L. Niinist€o, Thin Solid Films 514, 145 (2006).", + "bibtex_key": "Putkonen2006", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Atomic layer deposition of B2O3 thin films at room temperature", + "gold_authors": "Putkonen, M. and Niinist o, L.", + "gold_year": "2006", + "gold_venue": "Thin Solid Films", + "gold_volume": "514", + "gold_issue": "1-2", + "gold_pages": "145--149" + }, + { + "paper": "P251", + "gold_index": 48, + "step4_index": 48, + "raw_reference": "J. D. Ferguson, A. W. Weimer, and S. M. George, Thin Solid Films 413, 16 (2002).", + "bibtex_key": "Ferguson2002", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Atomic layer deposition of boron nitride using sequential exposures of BCl _3 and NH _3", + "gold_authors": "J. D. Ferguson and A. W. Weimer and S. M. George", + "gold_year": "2002", + "gold_venue": "Thin Solid Films", + "gold_volume": "413", + "gold_issue": "", + "gold_pages": "16-25" + }, + { + "paper": "P251", + "gold_index": 49, + "step4_index": 49, + "raw_reference": "B. Ma˚rlid, M. Ottosson, U. Pettersson, K. Larsson, and J.-O. Carlsson, Thin Solid Films 402, 167 (2002).", + "bibtex_key": "Marlid2002", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Atomic layer deposition of BN thin films", + "gold_authors": "B. M rlid and M. Ottosson and U. Pettersson and K. Larsson and J.-O. Carlsson", + "gold_year": "2002", + "gold_venue": "Thin Solid Films", + "gold_volume": "402", + "gold_issue": "", + "gold_pages": "167-171" + }, + { + "paper": "P251", + "gold_index": 50, + "step4_index": 50, + "raw_reference": "J. Olander, L. M. Ottosson, P. Heszler, J. O. Carlsson, and K. M. E. Larsson, Chem. Vap. Deposition 11, 330 (2005).", + "bibtex_key": "Olander2005", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Laser-assisted atomic layer deposition of boron nitride thin films", + "gold_authors": "Olander, J. and Ottosson, L. M. and Heszler, P. and Carlsson, J. O. and Larsson, K. M. E.", + "gold_year": "2005", + "gold_venue": "Chem. Vap. Deposition", + "gold_volume": "11", + "gold_issue": "6-7", + "gold_pages": "330--337" + }, + { + "paper": "P251", + "gold_index": 51, + "step4_index": 51, + "raw_reference": "V. V. Brei, V. A. Kasperskii, and N. E. Gulyanitskaya, React. Kinet. Catal. Lett. 50, 415 (1993).", + "bibtex_key": "Brei1993", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Synthesis and study of boron phosphate and titanium silicate compounds on silica surface", + "gold_authors": "V. V. Brei and V. A. Kasperskii and N. E. Gulyanitskaya", + "gold_year": "1993", + "gold_venue": "React. Kinet. Catal. Lett.", + "gold_volume": "50", + "gold_issue": "", + "gold_pages": "415-421" + }, + { + "paper": "P251", + "gold_index": 52, + "step4_index": 52, + "raw_reference": "V. M. Gun’ko, Kinet. Katal. 34, 463 (1993); 34, 406 (1993).", + "bibtex_key": "Gunko1993", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Investigation of molecular deposition reactions in the formation of boron phosphate on the surface of dispersed silica", + "gold_authors": "V. M. Gun'ko", + "gold_year": "1993", + "gold_venue": "Kinet. Katal.", + "gold_volume": "34", + "gold_issue": "", + "gold_pages": "463-466" + }, + { + "paper": "P251", + "gold_index": 53, + "step4_index": 53, + "raw_reference": "S. F. Komarov, J. J. Lee, J. B. Hudson, and M. P. D’Evelyn, Diamond Relat. Mater. 7, 1087 (1998).", + "bibtex_key": "Komarov1998", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Self-limiting diamond growth from alternating CF _x and H fluxes", + "gold_authors": "S. F. Komarov and J. J. Lee and J. B. Hudson and M. P. D'Evelyn", + "gold_year": "1998", + "gold_venue": "Diamond Relat. Mater.", + "gold_volume": "7", + "gold_issue": "", + "gold_pages": "1087-1094" + }, + { + "paper": "P251", + "gold_index": 54, + "step4_index": 54, + "raw_reference": "T. I. Hukka, R. E. Rawles, and M. P. D’Evelyn, Thin Solid Films 225, 212 (1993).", + "bibtex_key": "Hukka1993", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "NOVEL METHOD FOR CHEMICAL VAPOR-DEPOSITION AND ATOMIC LAYER EPITAXY USING RADICAL CHEMISTRY", + "gold_authors": "T. I. Hukka and R. E. Rawles and M. P. D'Evelyn", + "gold_year": "1993", + "gold_venue": "Thin Solid Films", + "gold_volume": "225", + "gold_issue": "", + "gold_pages": "212-218" + }, + { + "paper": "P251", + "gold_index": 55, + "step4_index": 55, + "raw_reference": "R. Huang and A. H. Kitai, Appl. Phys. Lett. 61, 1450 (1992).", + "bibtex_key": "Huang1992", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Temperature-dependence of the growth orientation of atomic layer growth MgO", + "gold_authors": "R. Huang and A. H. Kitai", + "gold_year": "1992", + "gold_venue": "Appl. Phys. Lett.", + "gold_volume": "61", + "gold_issue": "", + "gold_pages": "1450-1452" + }, + { + "paper": "P251", + "gold_index": 56, + "step4_index": 56, + "raw_reference": "R. Huang and A. H. Kitai, J. Electron. Mater. 22, 215 (1993).", + "bibtex_key": "Huang1993", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Preparation and characterization of thin-films of MgO , Al _2 O _3 and MgAl _2 O _4 by atomic layer deposition", + "gold_authors": "R. Huang and A. H. Kitai", + "gold_year": "1993", + "gold_venue": "J. Electron. 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Chem.", + "gold_volume": "", + "gold_issue": "8", + "gold_pages": "1135--1142" + } + ] +} diff --git a/Miikkulainen_2013/step7_resolved_tables/gold.json b/Miikkulainen_2013/step7_resolved_tables/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..717d5b40eaa4dc8a3cb79ef7a1756aaa9fa6316f --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/gold.json @@ -0,0 +1,619 @@ +{ + "schema_version": 1, + "task": "step7_resolved_tables", + "paper_id": "P251", + "public_id": "Miikkulainen_2013", + "gold_type": "derived_gold", + "quality_scope": "Deterministic physical-table enrichment from authoritative Step 2 table content, Step 5 bibliography links, and Step 6 source-derived scholarly identities.", + "derivation": { + "step2": "../step2_table_reconstruction/", + "step4": "../step4_bibliography/gold.json", + "step5": "../step5_reference_matching/gold.json", + "step6": "../step6_reference_resolution/gold.json" + }, + "quality_columns": [ + "tabulus_reference_indices", + "tabulus_canonical_dois", + "tabulus_canonical_titles", + "tabulus_canonical_authors", + "tabulus_canonical_years", + "tabulus_canonical_venues", + "tabulus_raw_references" + ], + "prediction_columns_not_part_of_gold_quality_contract": [ + "tabulus_resolution_statuses", + "tabulus_resolution_sources", + "tabulus_resolution_confidences", + "tabulus_resolution_reasons", + "tabulus_unmatched_tokens" + ], + "semantics": { + "json_arrays": "Each appended cell is JSON-encoded. Array positions correspond to the bibliography indices in tabulus_reference_indices.", + "step6_scope": "Canonical identity fields are populated only where the authoritative Step 6 gold contains a record for the linked Step 4 bibliography index. Empty canonical fields mean that the reference is outside the Step 6 gold identity scope, not that the reference itself is absent.", + "physical_tables": "This core Step 7 gold contract covers physical reference-bearing tables. Optional continuation merging is not a separate quality target in this release." + }, + "summary": { + "resolved_gold_tables": 44, + "citation_cells": 1478, + "bibliography_link_occurrences": 4384, + "unique_bibliography_indices_linked": 2288, + "step6_identity_covered_link_occurrences": 4351, + "step6_identity_uncovered_link_occurrences": 33, + "unique_step6_identity_covered_indices": 2272, + "unique_step6_identity_uncovered_indices": 16 + }, + "tables": [ + { + "table_id": 1, + "table_key": "page_006_table_001", + "gold_csv": "tables/page_006_table_001/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_006_table_001/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 21, + "bibliography_links": 62, + "step6_identity_covered_links": 62, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 2, + "table_key": "page_007_table_002", + "gold_csv": "tables/page_007_table_002/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_007_table_002/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 58, + "bibliography_links": 488, + "step6_identity_covered_links": 486, + "step6_identity_uncovered_links": 2 + }, + { + "table_id": 3, + "table_key": "page_008_table_003", + "gold_csv": "tables/page_008_table_003/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_008_table_003/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 58, + "bibliography_links": 139, + "step6_identity_covered_links": 139, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 4, + "table_key": "page_009_table_004", + "gold_csv": "tables/page_009_table_004/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_009_table_004/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 46, + "bibliography_links": 338, + "step6_identity_covered_links": 337, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 5, + "table_key": "page_010_table_005", + "gold_csv": "tables/page_010_table_005/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_010_table_005/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 52, + "bibliography_links": 188, + "step6_identity_covered_links": 188, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 6, + "table_key": "page_011_table_006", + "gold_csv": "tables/page_011_table_006/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_011_table_006/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 51, + "bibliography_links": 113, + "step6_identity_covered_links": 113, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 7, + "table_key": "page_012_table_007", + "gold_csv": "tables/page_012_table_007/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_012_table_007/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 53, + "bibliography_links": 286, + "step6_identity_covered_links": 284, + "step6_identity_uncovered_links": 2 + }, + { + "table_id": 8, + "table_key": "page_013_table_008", + "gold_csv": "tables/page_013_table_008/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_013_table_008/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 51, + "bibliography_links": 217, + "step6_identity_covered_links": 217, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 9, + "table_key": "page_014_table_009", + "gold_csv": "tables/page_014_table_009/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_014_table_009/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 53, + "bibliography_links": 156, + "step6_identity_covered_links": 154, + "step6_identity_uncovered_links": 2 + }, + { + "table_id": 10, + "table_key": "page_015_table_010", + "gold_csv": "tables/page_015_table_010/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_015_table_010/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 51, + "bibliography_links": 131, + "step6_identity_covered_links": 130, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 11, + "table_key": "page_016_table_011", + "gold_csv": "tables/page_016_table_011/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_016_table_011/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 49, + "bibliography_links": 196, + "step6_identity_covered_links": 195, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 12, + "table_key": "page_017_table_012", + "gold_csv": "tables/page_017_table_012/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_017_table_012/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 44, + "bibliography_links": 82, + "step6_identity_covered_links": 82, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 13, + "table_key": "page_018_table_013", + "gold_csv": "tables/page_018_table_013/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_018_table_013/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 40, + "bibliography_links": 205, + "step6_identity_covered_links": 205, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 14, + "table_key": "page_019_table_014", + "gold_csv": "tables/page_019_table_014/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_019_table_014/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 51, + "bibliography_links": 222, + "step6_identity_covered_links": 222, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 15, + "table_key": "page_020_table_015", + "gold_csv": "tables/page_020_table_015/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_020_table_015/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 54, + "bibliography_links": 164, + "step6_identity_covered_links": 163, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 16, + "table_key": "page_021_table_016", + "gold_csv": "tables/page_021_table_016/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_021_table_016/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 45, + "bibliography_links": 119, + "step6_identity_covered_links": 114, + "step6_identity_uncovered_links": 5 + }, + { + "table_id": 17, + "table_key": "page_022_table_017", + "gold_csv": "tables/page_022_table_017/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_022_table_017/gold.csv", + "reference_column_index": 4, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 3, + "bibliography_links": 4, + "step6_identity_covered_links": 4, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 18, + "table_key": "page_026_table_018", + "gold_csv": "tables/page_026_table_018/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_026_table_018/gold.csv", + "reference_column_index": 2, + "reference_column_header": "Ref.", + "header_row_index": 0, + "citation_cells": 31, + "bibliography_links": 31, + "step6_identity_covered_links": 31, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 19, + "table_key": "page_028_table_019", + "gold_csv": "tables/page_028_table_019/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_028_table_019/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 19, + "bibliography_links": 80, + "step6_identity_covered_links": 77, + "step6_identity_uncovered_links": 3 + }, + { + "table_id": 20, + "table_key": "page_029_table_020", + "gold_csv": "tables/page_029_table_020/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_029_table_020/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 23, + "bibliography_links": 78, + "step6_identity_covered_links": 77, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 21, + "table_key": "page_030_table_021", + "gold_csv": "tables/page_030_table_021/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_030_table_021/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 22, + "bibliography_links": 79, + "step6_identity_covered_links": 78, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 22, + "table_key": "page_031_table_022", + "gold_csv": "tables/page_031_table_022/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_031_table_022/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 26, + "bibliography_links": 56, + "step6_identity_covered_links": 56, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 23, + "table_key": "page_032_table_023", + "gold_csv": "tables/page_032_table_023/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_032_table_023/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 30, + "bibliography_links": 38, + "step6_identity_covered_links": 38, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 24, + "table_key": "page_033_table_024", + "gold_csv": "tables/page_033_table_024/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_033_table_024/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 12, + "bibliography_links": 91, + "step6_identity_covered_links": 91, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 25, + "table_key": "page_034_table_025", + "gold_csv": "tables/page_034_table_025/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_034_table_025/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 24, + "bibliography_links": 44, + "step6_identity_covered_links": 43, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 26, + "table_key": "page_035_table_026", + "gold_csv": "tables/page_035_table_026/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_035_table_026/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 34, + "bibliography_links": 52, + "step6_identity_covered_links": 49, + "step6_identity_uncovered_links": 3 + }, + { + "table_id": 27, + "table_key": "page_036_table_027", + "gold_csv": "tables/page_036_table_027/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_036_table_027/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 29, + "bibliography_links": 45, + "step6_identity_covered_links": 45, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 28, + "table_key": "page_037_table_028", + "gold_csv": "tables/page_037_table_028/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_037_table_028/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 25, + "bibliography_links": 33, + "step6_identity_covered_links": 33, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 29, + "table_key": "page_038_table_029", + "gold_csv": "tables/page_038_table_029/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_038_table_029/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 19, + "bibliography_links": 34, + "step6_identity_covered_links": 34, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 30, + "table_key": "page_039_table_030", + "gold_csv": "tables/page_039_table_030/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_039_table_030/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 37, + "bibliography_links": 53, + "step6_identity_covered_links": 53, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 31, + "table_key": "page_040_table_031", + "gold_csv": "tables/page_040_table_031/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_040_table_031/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 31, + "bibliography_links": 54, + "step6_identity_covered_links": 54, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 32, + "table_key": "page_041_table_032", + "gold_csv": "tables/page_041_table_032/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_041_table_032/gold.csv", + "reference_column_index": 10, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 20, + "bibliography_links": 25, + "step6_identity_covered_links": 24, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 33, + "table_key": "page_048_table_033", + "gold_csv": "tables/page_048_table_033/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_048_table_033/gold.csv", + "reference_column_index": 8, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 32, + "bibliography_links": 50, + "step6_identity_covered_links": 50, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 34, + "table_key": "page_049_table_034", + "gold_csv": "tables/page_049_table_034/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_049_table_034/gold.csv", + "reference_column_index": 8, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 31, + "bibliography_links": 37, + "step6_identity_covered_links": 37, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 35, + "table_key": "page_050_table_035", + "gold_csv": "tables/page_050_table_035/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_050_table_035/gold.csv", + "reference_column_index": 8, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 29, + "bibliography_links": 45, + "step6_identity_covered_links": 44, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 36, + "table_key": "page_051_table_036", + "gold_csv": "tables/page_051_table_036/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_051_table_036/gold.csv", + "reference_column_index": 10, + "reference_column_header": "Ref.", + "header_row_index": 0, + "citation_cells": 35, + "bibliography_links": 35, + "step6_identity_covered_links": 35, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 37, + "table_key": "page_054_table_037", + "gold_csv": "tables/page_054_table_037/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_054_table_037/gold.csv", + "reference_column_index": 7, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 27, + "bibliography_links": 50, + "step6_identity_covered_links": 50, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 38, + "table_key": "page_055_table_038", + "gold_csv": "tables/page_055_table_038/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_055_table_038/gold.csv", + "reference_column_index": 7, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 25, + "bibliography_links": 45, + "step6_identity_covered_links": 43, + "step6_identity_uncovered_links": 2 + }, + { + "table_id": 39, + "table_key": "page_056_table_039", + "gold_csv": "tables/page_056_table_039/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_056_table_039/gold.csv", + "reference_column_index": 7, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 16, + "bibliography_links": 36, + "step6_identity_covered_links": 36, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 40, + "table_key": "page_059_table_040", + "gold_csv": "tables/page_059_table_040/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_059_table_040/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 45, + "bibliography_links": 61, + "step6_identity_covered_links": 60, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 41, + "table_key": "page_060_table_041", + "gold_csv": "tables/page_060_table_041/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_060_table_041/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 29, + "bibliography_links": 51, + "step6_identity_covered_links": 47, + "step6_identity_uncovered_links": 4 + }, + { + "table_id": 42, + "table_key": "page_061_table_042", + "gold_csv": "tables/page_061_table_042/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_061_table_042/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 38, + "bibliography_links": 60, + "step6_identity_covered_links": 60, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 43, + "table_key": "page_062_table_043", + "gold_csv": "tables/page_062_table_043/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_062_table_043/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 1, + "bibliography_links": 1, + "step6_identity_covered_links": 1, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 44, + "table_key": "page_062_table_044", + "gold_csv": "tables/page_062_table_044/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_062_table_044/gold.csv", + "reference_column_index": 6, + "reference_column_header": "References", + "header_row_index": 0, + "citation_cells": 8, + "bibliography_links": 10, + "step6_identity_covered_links": 10, + "step6_identity_uncovered_links": 0 + } + ] +} diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_006_table_001/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_006_table_001/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..690a41821f709e3e3d9c5fceb3e5491f6988f8d1 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_006_table_001/gold.csv @@ -0,0 +1,27 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +3,Lithium,,,,[],[],[],[],[],[],[] +,Li2O (LiOH),Li(OtBu),H2O,44,[44],"[""10.1039/b923490j""]","[""Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition""]","[[""Aaltonen, Titta"",""Alnes, Mari"",""Nilsen, Ola"",""Costelle, Leila"",""Fjellv g, Helmer""]]",[2010],"[""J. Mater. Chem.""]","[""T. Aaltonen, M. Alnes, O. Nilsen, L. Costelle, and H. Fjellva˚g, J. Mater. Chem. 20, 2877 (2010).""]" +,Li2CO3,Li(thd),O3,45,[45],"[""10.1039/b913466b""]","[""Atomic layer deposition of lithium containing thin films""]","[[""Putkonen, Matti"",""Aaltonen, Titta"",""Alnes, Mari"",""Sajavaara, Timo"",""Nilsen, Ola"",""Fjellv g, Helmer""]]",[2009],"[""J. Mater. Chem.""]","[""M. Putkonen, T. Aaltonen, M. Alnes, T. Sajavaara, O. Nilsen, and H. Fjellva˚g, J. Mater. Chem. 19, 8767 (2009).""]" +5,Boron,,,,[],[],[],[],[],[],[] +,B2O3,BBr3,H2O,46 and 47,"[46,47]","["""",""""]","[""Molecular layering of boron oxide on the surface of silica"",""Atomic layer deposition of B2O3 thin films at room temperature""]","[[""S. I. Kol'tsov"",""T. V. Tuz"",""A. N. Volkova""],[""Putkonen, M."",""Niinist o, L.""]]","[1979,2006]","[""Zh. Prikl. Khim."",""Thin Solid Films""]","[""S. I. Kol’tsov, T. V. Tuz, and A. N. Volkova, Zh. Prikl. Khim. 52, 2196 (1979) [J. Appl. Chem. USSR 52, 2074 (1979)]."",""M. Putkonen and L. Niinist€o, Thin Solid Films 514, 145 (2006).""]" +,BN,BCl3,NH3,48,[48],"[""""]","[""Atomic layer deposition of boron nitride using sequential exposures of BCl _3 and NH _3""]","[[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""]]",[2002],"[""Thin Solid Films""]","[""J. D. Ferguson, A. W. Weimer, and S. M. George, Thin Solid Films 413, 16 (2002).""]" +,,BBr3,NH3,49 and 50,"[49,50]","["""",""""]","[""Atomic layer deposition of BN thin films"",""Laser-assisted atomic layer deposition of boron nitride thin films""]","[[""B. M rlid"",""M. Ottosson"",""U. Pettersson"",""K. Larsson"",""J.-O. Carlsson""],[""Olander, J."",""Ottosson, L. M."",""Heszler, P."",""Carlsson, J. O."",""Larsson, K. M. E.""]]","[2002,2005]","[""Thin Solid Films"",""Chem. Vap. Deposition""]","[""B. Ma˚rlid, M. Ottosson, U. Pettersson, K. Larsson, and J.-O. Carlsson, Thin Solid Films 402, 167 (2002)."",""J. Olander, L. M. Ottosson, P. Heszler, J. O. Carlsson, and K. M. E. Larsson, Chem. Vap. Deposition 11, 330 (2005).""]" +,,BBr3,NH3☼,50,[50],"[""""]","[""Laser-assisted atomic layer deposition of boron nitride thin films""]","[[""Olander, J."",""Ottosson, L. M."",""Heszler, P."",""Carlsson, J. O."",""Larsson, K. M. E.""]]",[2005],"[""Chem. Vap. Deposition""]","[""J. Olander, L. M. Ottosson, P. Heszler, J. O. Carlsson, and K. M. E. Larsson, Chem. Vap. Deposition 11, 330 (2005).""]" +,BxPyOz,B(OMe)3,POCl3,51 and 52,"[51,52]","["""",""""]","[""Synthesis and study of boron phosphate and titanium silicate compounds on silica surface"",""Investigation of molecular deposition reactions in the formation of boron phosphate on the surface of dispersed silica""]","[[""V. V. Brei"",""V. A. Kasperskii"",""N. E. Gulyanitskaya""],[""V. M. Gun'ko""]]","[1993,1993]","[""React. Kinet. Catal. Lett."",""Kinet. Katal.""]","[""V. V. Brei, V. A. Kasperskii, and N. E. Gulyanitskaya, React. Kinet. Catal. Lett. 50, 415 (1993)."",""V. M. Gun’ko, Kinet. Katal. 34, 463 (1993); 34, 406 (1993).""]" +6,Carbon,,,,[],[],[],[],[],[],[] +,C b,CFx,H c,53,[53],"[""""]","[""Self-limiting diamond growth from alternating CF _x and H fluxes""]","[[""S. F. Komarov"",""J. J. Lee"",""J. B. Hudson"",""M. P. D'Evelyn""]]",[1998],"[""Diamond Relat. Mater.""]","[""S. F. Komarov, J. J. Lee, J. B. Hudson, and M. P. D’Evelyn, Diamond Relat. Mater. 7, 1087 (1998).""]" +,,CCl3,H c,54,[54],"[""""]","[""NOVEL METHOD FOR CHEMICAL VAPOR-DEPOSITION AND ATOMIC LAYER EPITAXY USING RADICAL CHEMISTRY""]","[[""T. I. Hukka"",""R. E. Rawles"",""M. P. D'Evelyn""]]",[1993],"[""Thin Solid Films""]","[""T. I. Hukka, R. E. Rawles, and M. P. D’Evelyn, Thin Solid Films 225, 212 (1993).""]" +12,Magnesium,,,,[],[],[],[],[],[],[] +,MgO,MgCp2,H2O,55–62,"[55,56,57,58,59,60,61,62]","["""","""","""","""","""","""","""",""10.1149/1.3272800""]","[""Temperature-dependence of the growth orientation of atomic layer growth MgO"",""Preparation and characterization of thin-films of MgO , Al _2 O _3 and MgAl _2 O _4 by atomic layer deposition"",""THE SURFACE-MORPHOLOGY OF ATOMIC LAYER DEPOSITED MAGNESIA"",""Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films"",""Magnesium aluminate thin films by atomic layer deposition from organometallic precursors and water"",""Atomic layer deposition of Zn1-xMgxO buffer layers for Cu(In,Ga)Se-2 solar cells"",""Atomic layer deposition of magnetic thin films"",""Investigation of Thermal Stability of Atomic-Layer-Deposited MgO Thin Films on Si(100) Using X-Ray Photoelectron Spectroscopy""]","[[""R. Huang"",""A. H. Kitai""],[""R. Huang"",""A. H. Kitai""],[""R. Huang"",""A. H. Kitai""],[""M. Putkonen"",""T. Sajavaara"",""L. Niinist o""],[""M. Putkonen"",""M. Nieminen"",""L. Niinist o""],[""T orndahl, T."",""Platzer-Bj orkman, C."",""Kessler, J."",""Edoff, M.""],[""Mantovan, R."",""Georcieva, M."",""Perego, M."",""Lu, H. L."",""Zenkevich, A."",""Scarel, G."",""Fanciulli, M.""],[""Lu, Hong-Liang"",""Ding, Shi-Jin"",""Zhang, David Wei""]]","[1992,1993,1993,2000,2004,2007,2007,2010]","[""Appl. Phys. Lett."",""J. Electron. Mater."",""J. Mater. Sci. Lett."",""J. Mater. Chem."",""Thin Solid Films"",""Prog. Photovoltaics"",""Acta Phys. Pol. A"",""Electrochem. Solid-State Lett.""]","[""R. Huang and A. H. Kitai, Appl. Phys. Lett. 61, 1450 (1992)."",""R. Huang and A. H. Kitai, J. Electron. Mater. 22, 215 (1993)."",""R. Huang and A. H. Kitai, J. Mater. Sci. Lett. 12, 1444 (1993)."",""M. Putkonen, T. Sajavaara, and L. Niinist€o, J. Mater. Chem. 10, 1857 (2000)."",""M. Putkonen, M. Nieminen, and L. Niinist€o, Thin Solid Films 466, 103 (2004)."",""T. T€orndahl, C. Platzer-Bj€orkman, J. Kessler, and M. Edoff, Prog. Photovoltaics 15, 225 (2007)."",""R. Mantovan, M. Georcieva, M. Perego, H. L. Lu, A. Zenkevich, G. Scarel, and M. Fanciulli, Acta Phys. Pol. A 112, 1271 (2007)."",""H.-L. Lu, S.-J. Ding, and D. W. Zhang, Electrochem. Solid-State Lett. 13, G25 (2010).""]" +,,Mg(CpEt)2,H2O,63,[63],"[""10.1021/jp806088m""]","[""Atomic Layer Deposition of MgO Using Bis(ethylcyclopentadienyl)magnesium and H2O""]","[[""Burton, B. B."",""Goldstein, D. N."",""George, S. M.""]]",[2009],"[""J. Phys. Chem. C""]","[""B. B. Burton, D. N. Goldstein, and S. M. George, J. Phys. Chem. C 113, 1939 (2009).""]" +,,Mg(thd)2,H2O2,64,[64],"[""""]","[""Properties of [Mg _2 (thd) _4 ] as a Precursor for Atomic Layer Deposition of MgO Thin Films and Crystal Structures of [Mg _2 (thd) _4 ] and [Mg(thd) _2 (EtOH) _2 ]""]","[[""T. Hatanp a a"",""J. Ihanus"",""J. Kansikas"",""I. Mutikainen"",""M. Ritala"",""M. Leskel a""]]",[1999],"[""Chem. Mater.""]","[""T. Hatanp€a€a, J. Ihanus, J. Kansikas, I. Mutikainen, M. Ritala, and M. Leskel€a, Chem. Mater. 11, 1846 (1999).""]" +,,Mg(thd)2,O3,65,[65],"[""""]","[""Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy""]","[[""M. Putkonen"",""L.-S. Johansson"",""E. Rauhala"",""L. Niinist o""]]",[1999],"[""J. Mater. Chem.""]","[""M. Putkonen, L.-S. Johansson, E. Rauhala, and L. Niinist€o, J. Mater. Chem. 9, 2449 (1999).""]" +,MgF2,Mg(thd)2,TiF4,66 and 67,"[66,67]","["""",""""]","[""Study of a novel ALD process for depositing MgF2 thin films"",""Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films""]","[[""Pilvi, T."",""Hatanp a a, T."",""Puukilainen, E."",""Arstila, K."",""Bischoff, M."",""Kaiser, U."",""Kaiser, N."",""Leskel a, M."",""Ritala, M.""],[""Tero Pilvi"",""Mikko Ritala"",""Markku Leskela"",""Martin Bischoff"",""Ute Kaiser"",""Norbert Kaiser""]]","[2007,2008]","[""J. Mater. Chem."",""Appl. Opt.""]","[""T. Pilvi, T. Hatanp€a€a, E. Puukilainen, K. Arstila, M. Bischoff, U. Kaiser, N. Kaiser, M. Leskel€a, and M. Ritala, J. Mater. Chem. 17, 5077 (2007)."",""T. Pilvi, M. Ritala, M. Leskel€a, M. Bischoff, U. Kaiser, and N. Kaiser, Appl. Opt. 47, C271 (2008).""]" +,,Mg(thd)2,TaF5,68,[68],"[""""]","[""Atomic layer deposition of MgF2 thin films using TaF5 as a novel fluorine source""]","[[""Pilvi, T."",""Puukilainen, E."",""Kreissig, U."",""Leskel a, M."",""Ritala, M.""]]",[2008],"[""Chem. Mater.""]","[""T. Pilvi, E. Puukilainen, U. Kreissig, M. Leskel€a, and M. Ritala, Chem. Mater. 20, 5023 (2008).""]" +,MgTe,Mg,Te,69 and 70,"[69,70]","["""",""""]","[""CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters"",""Atomic layer epitaxy of CdTe , MgTe and MnTe growth of CdTe/MnTe tilted superlattices on vicinal surfaces""]","[[""J. M. Hartmann"",""J. Cibert"",""F. Kany"",""H. Mariette"",""M. Charleux"",""P. Alleysson"",""R. Langer"",""G. Feuillet""],[""J. M. Hartmann"",""M. 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Solid-State Lett. 5, C91 (2002).""]" +,Al2O3,AlCl3,H2O,73–98,"[73,74,75,76,77,78,79,80,81,82,83,84,85,86,87,88,89,90,91,92,93,94,95,96,97,98]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1021/jp803872s"",""10.1149/1.2975828"",""10.1007/s00216-010-3470-9"",""10.1149/1.3250936""]","[""Synthesis and investigation of aluminum--oxygen layers on the surface of silica"",""Study of aluminosilicate systems synthesized by the molecular-layering method"",""Fabrication and dielectric properties of multilayer Ta _2 O _5 /Al _2 O _3 nanolaminates"",""Atomic layer epitaxy for producing EL thin films"","""","""",""Properties of amorphous Al _2 O _3 films grown by ALE"",""GROWTH AND CHARACTERIZATION OF ALUMINUM-OXIDE THIN-FILMS DEPOSITED FROM VARIOUS SOURCE MATERIALS BY ATOMIC LAYER EPITAXY AND CHEMICAL VAPOR-DEPOSITION PROCESSES"",""LAYERED TANTALUM-ALUMINUM OXIDE-FILMS DEPOSITED BY ATOMIC LAYER EPITAXY"",""Determination of P/Al ratio in phosphorus-doped aluminium oxide thin films by XRF , RBS and FTIR"",""Studies on the morphology of Al _2 O _3 thin films grown by atomic layer epitaxy"",""Introducing atomic layer epitaxy for the deposition of optical thin films"",""Properties of Ta _2 O _3 -based dielectric nanolaminates deposited by atomic layer epitaxy"",""Dependence of atomic layer-deposited Al _2 O _3 films characteristics on growth temperature and Al precursors of Al ( CH _3 ) _3 and AlCl _3"",""Large-area atomic layer deposition and characterization of Al _2 O _3 film grown using AlCl _3 and H _2 O"",""Preparation and characterization of phosphorus-doped aluminum oxide thin films"",""Determination of aluminium in AlCl _3 and Al _2 O _3 modified silica catalyst supports"",""Multilayered tantalum-aluminum oxide films grown by atomic layer deposition"",""Development of dielectric properties of niobium oxide, tantalum oxide, and aluminum oxide based nanolayered materials"",""Electron probe microanalysis of HfO2 thin films on conductive and insulating substrates"",""Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon"",""Surface modification of thermoplastics by atomic layer deposition of Al2O3 and TiO2 thin films"",""Selective-area atomic layer deposition using poly(methyl methacrylate) films as mask"",""Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors"",""Atomic layer deposition (ALD) as a coating tool for reinforcing fibers"",""Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer""]","[[""S. I. Kol'tsov"",""V. B. Kopylov"",""V. M. Smirnov"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""V. M. Smirnov"",""R. R. Rachkovskii"",""T. V. Malalaeva"",""V. B. Aleskovskii""],["". K. Ezhovskii"",""A. I. Klusevich""],[""T. Suntola"",""J. Antson"",""A. Pakkala"",""S. Lindfors""],[""T. S. Suntola"",""A. J. Pakkala"",""S. G. Lindfors""],[""T. S. Suntola"",""A. J. Pakkala"",""S. G. Lindfors""],[""J. Aarik"",""A. Aidla"",""A. Jaek"",""A.-A. Kiisler"",""A.-A. Tammik""],[""L. Hiltunen"",""H. Kattelus"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen"",""M. Tiitta""],[""H. Kattelus"",""M. Ylilammi"",""J. Saarilahti"",""J. Antson"",""S. Lindfors""],[""M. Nieminen"",""L. Niinisto"",""R. Lappalainen""],[""M. Ritala"",""H. Saloniemi"",""M. Leskel a"",""T. Prohaska"",""G. Friedbacher"",""M. Grasserbauer""],[""D. Riihela"",""M. Ritala"",""R. Matero"",""M. Leskela""],[""K. Kukli"",""J. Ihanus"",""M. Ritala"",""M. Leskel a""],[""S. J. Yun"",""K. H. Lee"",""J. Skarp"",""H. R. Kim"",""K. S. Nam""],[""S. J. Yun"",""J. S. Kang"",""M. C. Paek"",""K. S. Nam""],[""M. Tiitta"",""E. Nyk anen"",""P. Soininen"",""L. Niinist o"",""M. Leskel a"",""R. Lappalainen""],[""M. Nieminen"",""L. Niinist o""],[""Y. S. Kim"",""J. S. Kang"",""S. J. Yun"",""K. I. Cho""],[""K. Kukli"",""M. Ritala"",""M. Leskel a""],[""Lulla, M."",""Asari, J."",""Aarik, J."",""Kukli, K."",""Rammula, R."",""Tapper, U."",""Kauppinen, E."",""Sammelselg, V.""],[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""de Castro, A."",""Bail on, L."",""Kukli, K."",""Aidla, A."",""Aarik, J."",""M andar, H."",""Uustare, T."",""Lu, J."",""H rsta, A.""],[""Kemell, Marianna"",""F arm, Elina"",""Ritala, Mikko"",""Leskel a, Markku""],[""F arm, Elina"",""Kemell, Marianna"",""Ritala, Mikko"",""Leskel a, Markku""],[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""G omez, A."",""Bail on, L."",""Kukli, K."",""Aarik, J."",""Ritala, M."",""Leskel a, M.""],[""Roy, A. 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Nieminen and L. Niinist€o, Fresenius’ J. Anal. Chem. 364, 224 (1999)."",""Y. S. Kim, J. S. Kang, S. J. Yun, and K. I. Cho, J. Korean Phys. Soc. 35, S216 (1999)."",""K. Kukli, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 148, F35 (2001)."",""M. Lulla, J. Asari, J. Aarik, K. Kukli, R. Rammula, U. Tapper, E. Kauppinen, and V. Sammelselg, Microchim. Acta 155, 195 (2006)."",""S. Due~nas, H. Cast\u0003an, H. Garc\u0003ıa, A. de Castro, L. Bail\u0003on, K. Kukli, A. Aidla, J. Aarik, H. M€andar, T. Uustare, J. Lu, and A. Ha˚rsta, J. Appl. Phys. 99, 054902 (2006)."",""M. Kemell, E. F€arm, M. Ritala, and M. Leskel€a, Eur. Polym. J. 44, 3564 (2008)."",""E. F€arm, M. Kemell, M. Ritala, and M. Leskel€a, J. Phys. Chem. C 112, 15791 (2008)."",""S. Due~nas, H. Cast\u0003an, H. Garc\u0003ıa, A. G\u0003omez, L. Bail\u0003on, K. Kukli, J. Aarik, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 155, G241 (2008)."",""A. K. Roy, W. Baumann, I. Koenig, G. Baumann, S. Schulze, M. Hietschold, T. Maeder, D. J. Nestler, B. Wielage, and W. A. Goedel, Anal. Bioanal. Chem. 396, 1913 (2010)."",""E. F€arm, M. Kemell, E. Santala, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 157, K10 (2010).""]" +,,AlCl3,H2O + cat. g,99,[99],"[""10.1134/S0020168510010097""]","[""Growth and properties of Al2O3 and SiO2 nanolayers on III-V semiconductors""]","[[""Ezhovskii, Yu. K."",""Kholkin, V. Yu.""]]",[2010],"[""Inorg. Mater.""]","[""Y. K. Ezhovskii and V. Y. Kholkin, Inorg. Mater. 46, 38 (2010).""]" +,,AlCl3,O2,100 and 101,"[100,101]","["""",""""]","[""GROWTH OF - Al _2 O _3 FILMS BY MOLECULAR LAYER EPITAXY"",""MOLECULAR LAYER EPITAXY OF - Al _2 O _3""]","[[""G. Oya"",""M. Yoshida"",""Y. Sawada""],[""G. Oya"",""Y. Sawada""]]","[1987,1990]","[""Appl. Phys. Lett."",""J. Cryst. Growth""]","[""G. Oya, M. Yoshida, and Y. Sawada, Appl. Phys. Lett. 51, 1143 (1987)."",""G. Oya and Y. Sawada, J. Cryst. Growth 99, 572 (1990).""]" +,,AlCl3,ROH d,"80, 88, and 102","[80,88,102]","["""","""",""""]","[""GROWTH AND CHARACTERIZATION OF ALUMINUM-OXIDE THIN-FILMS DEPOSITED FROM VARIOUS SOURCE MATERIALS BY ATOMIC LAYER EPITAXY AND CHEMICAL VAPOR-DEPOSITION PROCESSES"",""Preparation and characterization of phosphorus-doped aluminum oxide thin films"",""AALUMINUM-OXIDE THIN-FILM DEPOSITION FROM ALUMINUM-CHLORIDE AND 2-METHYL-2-PROPANOL USING THE ATOMIC LAYER EPITAXY PROCESS""]","[[""L. Hiltunen"",""H. Kattelus"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen"",""M. Tiitta""],[""M. Tiitta"",""E. Nyk anen"",""P. Soininen"",""L. Niinist o"",""M. Leskel a"",""R. Lappalainen""],[""M. Leskela"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen"",""M. Tiitta""]]","[1991,1998,1990]","[""Mater. Chem. Phys."",""Mater. Res. Bull."",""Acta Polytech. Scand., Chem. Technol. Ser.""]","[""L. Hiltunen, H. Kattelus, M. Leskel€a, M. M€akel€a, L. Niinist€o, E. Nyk€anen, P. Soininen, and M. Tiitta, Mater. Chem. Phys. 28, 379 (1991)."",""M. Tiitta, E. Nyk€anen, P. Soininen, L. Niinist€o, M. Leskel€a, and R. Lappalainen, Mater. Res. Bull. 33, 1315 (1998)."",""M. Leskel€a, L. Niinist€o, E. Nyk€anen, P. Soininen, and M. Tiitta, Acta Polytech. Scand., Chem. Technol. Metall. Ser. 195, 193 (1990).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_007_table_002/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_007_table_002/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..8922138e07f5a68ad17eb415acc78f52dc4bb3a2 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_007_table_002/gold.csv @@ -0,0 +1,59 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,AlCl3,Al(OEt)3,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,,AlCl3,Al(OiPr)3,103 and 104,"[103,104]","["""",""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Atomic layer deposition of Al _2 O _3 films using AlCl _3 and Al(O ^i Pr) _3 as precursors""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""P. I. R ais anen"",""M. Ritala"",""M. Leskel a""]]","[2000,2002]","[""Science"",""J. Mater. Chem.""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000)."",""P. I. R€ais€anen, M. Ritala, and M. Leskel€a, J. Mater. Chem. 12, 1415 (2002).""]" +,,AlBr3,H2O,105,[105],"[""""]","[""FORMATION OF THIN ALUMINUM-OXIDE FILMS""]","[[""G. V. Anikeev"","". K. Ezhovskii"",""S. I. Kol'tsov""]]",[1988],"[""Neorg. Mater.""]","[""G. V. Anikeev, K. Ezhovskii, and S. I. Kol’tsov, Neorg. Mater. 24, 619 (1988) [Inorg. Mater. 24, 514 (1988)].""]" +,,AlMe3,H2O,"41, 59, 86, 94, 95, 98, and 106–396","[41,59,86,94,95,98,106,107,108,109,110,111,112,113,114,115,116,117,118,119,120,121,122,123,124,125,126,127,128,129,130,131,132,133,134,135,136,137,138,139,140,141,142,143,144,145,146,147,148,149,150,151,152,153,154,155,156,157,158,159,160,161,162,163,164,165,166,167,168,169,170,171,172,173,174,175,176,177,178,179,180,181,182,183,184,185,186,187,188,189,190,191,192,193,194,195,196,197,198,199,200,201,202,203,204,205,206,207,208,209,210,211,212,213,214,215,216,217,218,219,220,221,222,223,224,225,226,227,228,229,230,231,232,233,234,235,236,237,238,239,240,241,242,243,244,245,246,247,248,249,250,251,252,253,254,255,256,257,258,259,260,261,262,263,264,265,266,267,268,269,270,271,272,273,274,275,276,277,278,279,280,281,282,283,284,285,286,287,288,289,290,291,292,293,294,295,296,297,298,299,300,301,302,303,304,305,306,307,308,309,310,311,312,313,314,315,316,317,318,319,320,321,322,323,324,325,326,327,328,329,330,331,332,333,334,335,336,337,338,339,340,341,342,343,344,345,346,347,348,349,350,351,352,353,354,355,356,357,358,359,360,361,362,363,364,365,366,367,368,369,370,371,372,373,374,375,376,377,378,379,380,381,382,383,384,385,386,387,388,389,390,391,392,393,394,395,396]","["""","""","""","""",""10.1021/jp803872s"",""10.1149/1.3250936"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1063/1.3040311"",""10.1063/1.3054348"",""10.1002/cvde.200800710"",""10.1109/TMAG.2008.2001795"",""10.1021/jp8066298"",""10.1002/smll.200800795"",""DOI: 10.1016/j.orgel.2008.08.015"",""10.1021/cm702848y"",""10.1063/1.2952487"",""10.1016/j.tsf.2008.08.052"",""DOI: 10.1016/j.memsci.2008.05.037"","""",""DOI: 10.1016/j.orgel.2008.04.009"",""10.1002/jbm.a.31732"",""10.1149/1.2965495"",""10.1143/JJAP.47.8174"",""10.1063/1.3268474"",""10.1021/cm901404p"",""10.1109/JDT.2009.2022770"",""10.1039/b914318a"",""10.1063/1.3266006"",""10.1088/0268-1242/24/12/125013"",""10.1021/nn901055d"",""10.1021/nn900702e"",""10.1016/j.jcrysgro.2009.07.022"",""10.1016/j.sna.2008.11.015"",""10.1088/0957-4484/20/44/445202"",""10.1021/am9003667"",""10.1002/cvde.200906775"","""",""10.1016/j.cplett.2009.08.031"",""10.1063/1.3216582"",""10.1002/adma.200900136"",""10.1063/1.3159639"",""10.1063/1.3159834"",""10.1063/1.3103254"",""10.1016/j.mee.2009.03.090"",""10.1016/j.tsf.2009.03.190"","""",""10.1063/1.3126961"",""10.1088/0957-4484/20/25/255602"",""10.1002/adma.200803440"",""10.1063/1.3115144"",""10.1039/b819337a"",""10.1039/b820436e"",""10.1038/NNANO.2009.37"",""10.1149/1.3205455"",""10.1149/1.3211959"",""10.1063/1.3118575"",""10.1021/nn8006543"",""10.1149/1.3194252"","""",""10.1109/TIM.2008.2006964"",""10.1021/la804162a"",""10.1021/la900113e"",""10.1016/j.mee.2008.07.004"",""10.1063/1.3077021"",""10.1021/la803581k"",""10.1007/s10544-008-9217-0"",""10.1016/j.apsusc.2008.10.048"",""10.1021/ie800196h"",""10.1116/1.3097849"",""10.1149/1.3076143"",""10.1149/1.3072694"",""10.1116/1.3079662"",""10.1149/1.3118501"",""10.1016/j.jpowsour.2010.01.085"",""10.1002/cvde.200906833"",""10.1016/j.tsf.2010.04.018"",""10.1088/0957-4484/21/30/305705"",""10.1016/j.tsf.2010.03.011"",""10.1021/jp9049268"",""10.1021/jp908332q"","""","""",""10.1021/la902830d"",""10.1002/jrs.2395"",""10.1021/nn901250w"",""10.1021/ac902224q"",""10.1149/1.3258274"",""10.1016/j.memsci.2009.11.067"",""10.1149/1.3276040"",""10.1149/1.3271025"",""10.1063/1.3313946"",""10.1002/pssr.200903334"","""",""10.1063/1.3357432"",""10.1021/ja100396n"",""10.1088/0953-8984/22/15/155401"",""10.1002/smll.200902159"",""10.1021/jz9003075"",""10.1016/j.apsusc.2010.03.047"",""10.1063/1.3413961"",""10.1063/1.3399776"",""10.1016/j.electacta.2010.02.043"",""10.1021/cm100061n"",""10.1039/c0jm00355g"",""10.1021/jp1023229"",""10.1088/1748-3182/5/2/026005"",""10.1149/1.3301664"",""10.1021/la904604z"",""10.1021/cm903831c"",""10.1149/1.3428705"",""10.1002/chem.201001888"",""10.1088/0957-4484/21/5/055304"",""10.1021/la103337a"",""10.1002/adma.201002465"",""DOI: 10.1016/j.tsf.2010.07.027"",""DOI: 10.1016/j.orgel.2010.08.020"",""10.1177/0040517510371868"",""10.1063/1.3505311"",""10.1021/jp9120244"",""10.1021/jp1030587"",""DOI: 10.1016/j.sna.2010.02.015"",""10.1002/cvde.201006854"","""",""DOI: 10.1016/j.apsusc.2010.07.051"",""10.1021/am100217m"",""DOI: 10.1016/j.ssc.2010.06.023"",""DOI: 10.1016/j.sse.2010.05.007"",""10.1002/adma.201000766"",""10.1116/1.3488604"",""10.1002/smll.201000169""]","[""Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminium oxide from trimethylaluminium and water"",""Magnesium aluminate thin films by atomic layer deposition from organometallic precursors and water"",""Dependence of atomic layer-deposited Al _2 O _3 films characteristics on growth temperature and Al precursors of Al ( CH _3 ) _3 and AlCl _3"",""Surface modification of thermoplastics by atomic layer deposition of Al2O3 and TiO2 thin films"",""Selective-area atomic layer deposition using poly(methyl methacrylate) films as mask"",""Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer"",""SURFACE PHOTOCHEMICAL PHENOMENA IN LASER CHEMICAL VAPOR-DEPOSITION"",""Sequential surface chemical-reaction limited growth of high-quality Al _2 O _3 dielectrics"",""The reaction pathway for the growth of alumina on high surface area alumina and in ultrahigh vacuum by a reaction between trimethyl aluminum and water"",""Infrared spectroscopy of trimethylaluminum and dimethylaluminum chloride adsorbed on alumina"",""Electrical properties of Si -- Al _2 O _3 structures grown by ML -- ALE"",""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry"",""Surface chemistry of Al _2 O _3 deposition using Al ( CH _3 ) _3 and H _2 O in a binary reaction sequence"",""Surface reactions in Al _2 O _3 growth from trimethylaluminium and water by atomic layer epitaxy"",""Atomic layer controlled deposition of Al _2 O _3 films using binary reaction sequence chemistry"",""Al _2 O _3 thin film growth on Si (100) using binary reaction sequence chemistry"",""Modification of porous alumina membranes using Al _2 O _3 atomic layer controlled deposition"",""ALE -reactor for large area depositions"",""Properties of Al _2 O _3 -films deposited on silicon by atomic layer epitaxy"",""Substrate dependence on the optical properties of Al _2 O _3 films grown by atomic layer deposition"",""In situ monitoring of atomic layer controlled pore reduction in alumina tubular membranes using sequential surface reactions"",""Perfectly conformal TiN and Al _2 O _3 films deposited by atomic layer deposition"",""In situ characterization of atomic layer deposition processes by a mass spectrometer"",""Atomic layer deposited thin films for corrosion protection"",""High-resolution depth profiling in ultrathin Al _2 O _3 films on Si"",""IR and NMR study of the chemisorption of ammonia on trimethylaluminum-modified silica"",""Heterogenization of racemic ethylenebis(1-indenyl)zirconium dichloride on trimethylaluminum vapor modified silica surface"",""In situ mass spectrometry study on surface reactions in atomic layer deposition of Al _2 O _3 thin films from trimethylaluminum and water"",""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Atomic layer deposition of ultrathin and conformal Al _2 O _3 films on BN particles"",""Atomic layer deposition of Al _2 O _3 and SiO _2 on BN particles using sequential surface reactions"",""Atomic layer deposition of metal and transition metal nitride thin films and in situ mass spectrometry studies"",""Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina"",""In situ quartz crystal microbalance and quadrupole mass spectrometry studies of atomic layer deposition of aluminum oxide from trimethylaluminum and water"",""Atomic Layer Deposition of AlO _x for Thin Film Head Gap Applications"",""Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues"",""Atomic layer deposition of high permittivity oxides: film growth and in situ studies"",""Preparation by atomic layer deposition and characterisation of catalyst supports surfaced with aluminium nitride"",""Thin film atomic layer deposition equipment for semiconductor processing"",""Characterization of ALCVD - Al _2 O _3 and ZrO _2 layer using X -ray photoelectron spectroscopy"",""Characterisation of ALCVD Al _2 O _3 -- ZrO _2 nanolaminates, link between electrical and structural properties"",""Interface and material characterization of thin Al _2 O _3 layers deposited by ALD using TMA / H _2 O"",""ZnO / Al _2 O _3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements"",""Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition"",""Electrical characterization of thin Al _2 O _3 films grown by atomic layer deposition on silicon and various metal substrates"",""X-ray Reflectivity Characterization of ZnO / Al _2 O _3 Multilayers Prepared by Atomic Layer Deposition"",""Advanced characterization of high-k materials: A nuclear approach"",""Growth of ZnO / Al _2 O _3 alloy films using atomic layer deposition techniques"",""Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices"",""Atomic layer deposited protective coatings for micro-electromechanical systems"",""Effect of precursor concentration in atomic layer deposition of Al _2 O _3"",""Crystallization behavior of thin ALD - Al _2 O _3 films"",""Physical characterization of thin ALD - Al _2 O _3 films"",""Growth per cycle in atomic layer deposition: real application examples of a theoretical model"",""Surface treatment for high-quality Al _2 O _3 and HfO _2 layers deposited on HF -dipped surface by atomic layer deposition"",""Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides"",""Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon"",""GaAs metal-oxide-semiconductor field-effect transistor with nanometerthin dielectric grown by atomic layer deposition"",""Al _2 O _3 nanotubes and nanorods fabricated by coating and filling of carbon nanotubes with atomic-layer deposition"",""Low-temperature Al _2 O _3 atomic layer deposition"",""Effect of Hf Sources, Oxidizing Agents, and NH _3 / Ar Plasma on the Properties of HfAlO _x Films Prepared by Atomic Layer Deposition"",""Physical properties of ALD - Al _2 O _3 in a DRAM -capacitor equivalent structure comparing interfaces and oxygen precursors"",""Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: growth mode modelling and transmission electron microscopy"",""Island growth as a growth mode in atomic layer deposition: a phenomenological model"",""Ammonia pretreatment for high- appa dielectric growth on silicon"",""Nucleation and growth during the atomic layer deposition of W on Al _2 O _3 and Al _2 O _3 on W"",""Reduction of Incubation Period by Employing OH -Terminated Si (001) Substrates in the Atomic Layer Deposition of Al _2 O _3"",""Structural and optical properties of as-synthesized, Ga _2 O _3 -coated, and Al _2 O _3 -coated GaN nanowires"",""Nitrogen incorporation engineering and electrical properties of high-k gate dielectric ( HfO _2 and Al _2 O _3 ) films on Si (100) substrate"",""X-ray photoelectron spectroscopy characterisation of high-k dielectric Al _2 O _3 and HfO _2 layers deposited on SiO _2 /Si surface"",""Atomic Layer Deposition of Al _2 O _3 Films on Polyethylene Particles"",""Physical characterization of mixed HfAlO _x layers by complementary analysis techniques"",""VUV spectroscopic ellipsometry applied to the characterization of high- k dielectrics"",""Comparison of the electrical properties of high-k gate dielectric ( HfO _2 and Al _2 O _3 ) films with Pt or n(+)-polycrystalline-silicon gate"",""Atomic layer deposition of oxide films -- growth, characterisation and reaction mechanism studies"",""Structural and electrical characterization of Al _2 O _3 /HfO _2 /Al _2 O _3 on strained SiGe"",""TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition"",""Ultrathin Film Encapsulation of an OLED by ALD"",""Aluminum oxide tunnel barriers for single electron memory devices"",""Effect of atomic layer deposition coatings on the surface structure of anodic aluminum oxide membranes"",""Nucleation and Growth during Al _2 O _3 Atomic Layer Deposition on Polymers"",""Ion backscattering study of ultra-thin oxides: Al2O3 and AlHfOx films on Si"",""ALD deposited Al(2)O3 films on 6H-SiC(0001) after annealing in hydrogen atmosphere"",""Localized surface plasmon resonance nanosensor: A high-resolution distance-dependence study using atomic layer deposition"",""Multilayer coating method for x-ray reflectivity enhancement of polysilicon micro-mirrors at 1.54 angstrom wavelength"",""Interlayer-related paramagnetic defects in stacks of ultrathin layers of SiOx, Al2O3, ZrO2, and HfO2 on (100)Si"",""Crucial applications addressed via fundamental ALD advances"",""Optimization and structural characterization of W/Al2O3 nanolaminates grown using atomic layer deposition techniques"",""Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition"",""Characteristics of hafnium-aluminum-oxide thin films deposited by using atomic layer deposition with various aluminum compositions"",""Characteristics of an Al2O3/HfO2 bilayer deposited by atomic layer deposition for gate dielectric applications"",""Atomic layer deposition of Al2O3 thin films on diamond"",""Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3"",""Multilayer and functional coatings on carbon nanotubes using atomic layer deposition"",""Conformal nanocoating of zirconia nanoparticles by atomic layer deposition in a fluidized bed reactor"",""Nanocoating individual silica nanoparticles by atomic layer deposition in a fluidized bed reactor"",""Effect of nitrogen incorporation on electrical properties of high-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition"",""ALD of high-kappa dielectrics on suspended functionalized SWNTs"",""GaPO4 sensors for gravimetric monitoring during atomic layer deposition at high temperatures"",""Comparison of properties of an Al2O3 thin layers grown with remote O-2 plasma, H2O, or O-3 as oxidants in an ALD process for HfO2 gate dielectrics"",""Formation and characterization of long-chained alkylsiloxane self-assembled monolayers on atomic-layer-deposited aluminum oxide surfaces"",""Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency micro electromechanical system application"",""Mechanism of interfacial layer suppression after performing surface Al(CH3)(3) pretreatment during atomic layer deposition of Al2O3"",""Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate"",""Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems"",""Modification of opal photonic crystals using Al2O3 atomic layer deposition"",""Combustion prevention of iron powders by a novel coating method"",""Atomic layer deposition of TiO2 and Al2O3 thin films and nanolaminates"",""Effect of alumina addition on Bi-Ti-Al-O dielectric thin films"",""Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment"",""Characterization of Al2O3 thin films of GaAs substrate grown by atomic layer deposition"",""Molecular beam epitaxy grown template for subsequent atomic layer deposition of high kappa dielectrics"",""Atomic layer deposition on biological macromolecules: Metal oxide coating of tobacco mosaic virus and ferritin"",""Atomic layer deposition of aluminum oxide thin film on BaMgAl10O17 : Eu2+ phosphor"",""Surface modification of titania nanoparticles using ultrathin ceramic films"",""Gas diffusion barriers on polymers using Al2O3 atomic layer deposition"",""Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism"",""Long-wavelength InAIGaAs VCSELs with Al2O3 embedded current-confinement apertures"",""Sacrificial-layer atomic layer deposition for fabrication of non-close-packed inverse-opal photonic crystals"",""Single-crystalline MgAl2O4 spinel nanotubes using a reactive and removable MgO nanowire template"",""Ultrahigh X-ray reflectivity from W/Al2O3 multilayers fabricated using atomic layer deposition"",""A comparison of Al2O3/HfO2 and Al2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications"",""High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)"",""Annealing of Al2O3 thin films prepared by atomic layer deposition"",""Organic nanowire-templated fabrication of alumina nanotubes by atomic layer deposition"",""Structural properties of epitaxial gamma-Al2O3(111) thin films on 4H-SiC(0001)"",""Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC"",""Hollow inorganic nanospheres and nanotubes with tunable wall thicknesses by atomic layer deposition on self-assembled polymeric templates"",""Implementing ALD Layers in MEMS processing"",""Atomic layer deposition on electrospun polymer fibers as a direct route to Al2O3 microtubes with precise wall thickness control"",""Analysis of Al2O3 atomic layer deposition on ZrO2 nanoparticles in a rotary reactor"",""Rotary reactor for atomic layer deposition on large quantities of nanoparticles"",""Novel processing to produce polymer/ceramic nanocomposites by atomic layer deposition"",""Synthesis of a novel porous Polymer/Ceramic composite material by low-temperature atomic layer deposition"",""ALD refill of nanometer-scale gaps with high-kappa dielectric for advanced CMOS technologies"",""Atomic layer deposition of aluminum oxide on hydrophobic and hydrophilic surfaces"",""Formation of Al2O3-TiO2 bilayer using atomic layer deposition and its application to dynamic random access memory"",""Effects of Al content on the electrical properties of LaxAlyOz films grown on TiN substrate by atomic layer deposition"",""Electrical characterization of AlxTiyOz mixtures and Al2O3-TiO2-Al2O3 nanolaminates"",""Atomic layer deposition of Conformal inorganic nanoscale coatings on three-dimensional natural fiber systems: Effect of surface topology on film growth characteristics"",""Alternative dielectric films for rf MEMS capacitive switches deposited using atomic layer deposited Al2O3/ZnO alloys"",""X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates"",""Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor"",""Synthesis of oxidation-resistant metal nanoparticles via atomic layer deposition"",""Modification of interparticle forces for nanoparticles using atomic layer deposition"",""Atomic layer deposited alumina (l(2)O(3)) thin films on a high-Q mechanical silicon oscillator"",""Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon"",""Hydrogen barrier layer against silicon oxidation during atomic layer deposition of Al2O3 and HfO2"",""Atomic layer deposited Al2O3 as a capping layer for polymer based transistors"",""X-ray mirrors on flexible polymer substrates fabricated by atomic layer deposition"",""Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications"",""Enhancement in the efficiency of light emission from silicon by a thin Al2O3 surface-passivating layer grown by atomic layer deposition at low temperature"",""Atomic layer deposition enhanced rapid dry fabrication of micromechanical devices with cryogenic deep reactive ion etching"",""Hydrous-plasma treatment of Pt electrodes for atomic layer deposition of ultrathin high-k oxide films"",""Nanoindentation investigation of HfO2 and Al2O3 films grown by atomic layer deposition"",""Memory characteristics of atomic-layer-deposited high-kappa HfAlO nanocrystal capacitors"",""Effects of surface treatments on interfacial self-cleaning in atomic layer deposition of Al2O3 on InSb"",""Hierarchical three-dimensional ZnO and their shape-preserving transformation into hollow ZnAl2O4 nanostructures"",""Influence of Temperature on Evolution of Coaxial ZnO/Al2O3 One-Dimensional Heterostructures: From Core-Shell Nanowires to Spinel Nanotubes and Porous Nanowires"",""Atomic-layer-deposited nanostructures for graphene-based nanoelectronics"",""Stability of silver nanoparticles fabricated by nanosphere lithography and atomic layer deposition to femtosecond laser excitation"",""Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators"",""Rayleigh-instabilty-induced metal nanoparticle chains encapsulated in nanotubes produced by atomic layer deposition"",""Creating large area molecular electronic junctions using atomic layer deposition"",""Indium-free transparent organic light emitting diodes with Al doped ZnO electrodes grown by atomic layer and pulsed laser deposition"",""Large area nanorings fabricated using an atomic layer deposition Al2O3 spacer for magnetic random access memory application"",""Alumina atomic layer deposition nanocoatings on primary diamond particles using a fluidized bed reactor"",""Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics"",""Fabrication of ZnO/Al2O3 core-shell nanostructures and crystalline Al2O3 nanotube"",""Bio-inspired fabrication of antireflection nanostructures by replicating fly eyes"",""Investigation of sub-nm ALD aluminum oxide films by plasma assisted etch-through"",""Modifying the anti-wetting property of butterfly wings and water strider legs by atomic layer deposition coating: surface materials versus geometry"",""Protection of polymer from atomic-oxygen erosion using Al _2 O _3 atomic layer deposition coatings"",""Template-directed gas-phase fabrication of oxide nanotubes"",""The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge"",""Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)(2)S passivated GaAs(100) surfaces"",""Coating of Highly Porous Fiber Matrices by Atomic Layer Deposition"",""Atomic Layer Deposition Al2O3 Films for Permanent Magnet Isolation in TMR Read Heads"",""Nanoencapsulation and Stabilization of Single-Molecule/Particle Electronic Nanoassemblies Using Low-Temperature Atomic Layer Deposition"",""Transmission Electron Microscopy in situ Fabrication of ZnO/Al2O3 Composite Nanotubes by Electron-Beam-Irradiation-Induced Local Etching of ZnO/Al2O3 Core/Shell Nanowires"",""Monolayer-precision fabrication of mixed-organic-inorganic nanohybrid superlattices for flexible electronic devices"",""Two-Stage Atomic Layer Deposition of Aluminum Oxide on Alkanethiolate Self-Assembled Monolayers Using n-Propanol and Water as Oxygen Sources"",""Synthesis and optical properties of ZnO and carbon nanotube based coaxial heterostructures"",""ALD growth, thermal treatments and characterisation of Al2O3 layers"",""Barrier properties of polymer/alumina nanocomposite membranes fabricated by atomic layer deposition"",""General Assembly Method for Linear Metal Nanoparticle Chains Embedded in Nanotubes"",""Enhanced OLED performance upon photolithographic patterning by using an atomic-layer-deposited buffer layer"",""Biocompatibility of atomic layer-deposited alumina thin films"",""Characteristics of atomic-layer-deposited Al2O3 high-k dielectric films grown on Ge substrates"",""Growth of Dielectric Al2O3 Films by Atomic Layer Deposition"",""Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator"",""Role of Gas Doping Sequence in Surface Reactions and Dopant Incorporation during Atomic Layer Deposition of Al-Doped ZnO"",""Oxide Electronics by Spatial Atomic Layer Deposition"",""Complex three-dimensional conformal surfaces formed by atomic layer deposition: computation and experimental verification"",""Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation"",""Atomic layer-deposited platinum in high-k/metal gate stacks"",""Biotemplated Hierarchical Nanostructure of Layered Double Hydroxides with Improved Photocatalysis Performance"",""Surface Polarity Shielding and Hierarchical ZnO Nano-Architectures Produced Using Sequential Hydrothermal Crystal Synthesis and Thin Film Atomic Layer Deposition"",""MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer"",""Micromachined resonators of high Q-factor based on atomic layer deposited alumina"",""An efficient Si light-emitting diode based on an n-ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure"",""Biocompatible Interface Films Deposited within Porous Polymers by Atomic Layer Deposition (ALD)"",""Atmospheric Pressure Process for Coating Particles Using Atomic Layer Deposition"",""Optical properties of Al2O3 thin films grown by atomic layer deposition"",""Alumina coating of ultrafine nanoporous gold at room temperature and their optical properties"",""Photonic bandgap engineering with inverse opal multistacks of different refractive index contrasts"",""Nanoscopic Morphologies in Block Copolymer Nanorods as Templates for Atomic-Layer Deposition of Semiconductors"",""Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition"",""Replicated photonic crystals by atomic layer deposition within holographically defined polymer templates"",""Nucleation period, surface roughness, and oscillations in mass gain per cycle during W atomic layer deposition on Al2O3"",""Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning"",""Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices"",""Control of thermal deformation in dielectric mirrors using mechanical design and atomic layer deposition"",""Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment"",""Atomic layer deposition on gram quantities of multi-walled carbon nanotubes"",""Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable Encapsulation of Organic Electronics"",""A hybrid encapsulation method for organic electronics"",""Enhanced performance of dye-sensitized solar cells by an Al2O3 charge-recombination barrier formed by low-temperature atomic layer deposition"",""Low-temperature ZnO atomic layer deposition on biotemplates: flexible photocatalytic ZnO structures from eggshell membranes"",""Nanotubular metal-insulator-metal capacitor arrays for energy storage"",""Impact of Germanium Surface Conditioning and ALD-growth Temperature on Al2O3/ZrO2 High-k Dielectric Stacks"",""Microencapsulation of Moisture-Sensitive CaS:Eu2+ Particles with Aluminum Oxide"",""Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition"",""Bi-directional Kirkendall Effect in Coaxial Microtuble Nanolaminate Assemblies Fabricated by Atomic Layer Deposition"",""High Efficiency Silicon Solar Cells with Bilayer Passivation Structure"",""Atomic layer deposition of Al2O3 and TiO2 multilayers for applications as bandpass filters and antireflection coatings"",""Atomic-Layer-Deposited Alumina (Al2O3) Coating on Thin-Film Cryoresistors"",""Identification and Passivation of Defects in Self-Assembled Monolayers"",""Toward Plasmonic Solar Cells: Protection of Silver Nanoparticles via Atomic Layer Deposition of TiO2"",""A comparison of liquid and gas phase surface preparation of III-V compound semiconductors for atomic layer deposition"",""Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric"",""Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers"",""Capture and alignment of phi29 viral particles in sub-40 nanometer porous alumina membranes"",""Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition"",""In situ synthesis of TiO2-functionalized metal nanoparticles"",""Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)"",""Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates"",""Modeling the Conformality of Atomic Layer Deposition: The Effect of Sticking Probability"",""Fabrication of annular photonic crystals by atomic layer deposition and sacrificial etching"",""Photoluminescence of GaQ(3)-Al2O3 Core-Shell Nanowires"",""Improved performance of dye-sensitized solar cells with TiO2/alumina core-shell formation using atomic layer deposition"",""Atomic Layer Deposition of Gadolinium Aluminate using Gd((PrCp)-Pr-i)(3), TMA, and O-3 or H2O"",""Comparison of some coating techniques to fabricate barrier layers on packaging materials"",""Nanoporous gold-alumina core-shell films with tunable optical properties"",""Low-loss optical waveguides for the near ultra-violet and visible spectral regions with Al2O3 thin films from atomic layer deposition"",""Quartz Crystal Microbalance Studies of Al2O3 Atomic Layer Deposition Using Trimethylaluminum and Water at 125 degrees C"",""In Situ Analysis of Dopant Incorporation, Activation, and Film Growth during Thin Film ZnO and ZnO:Al Atomic Layer Deposition"","""","""",""Atomic Layer Deposition and Abrupt Wetting Transitions on Nonwoven Polypropylene and Woven Cotton Fabrics"",""Use of atomic layer deposition to improve the stability of silver substrates for in situ, high temperature SERS measurements"",""Synthesis of Nested Coaxial Multiple-Walled Nanotubes by Atomic Layer Deposition"",""Integrated Ultramicroelectrode-Nanopipet Probe for Concurrent Scanning Electrochemical Microscopy and Scanning Ion Conductance Microscopy"",""Enhanced Stability of LiCoO2 Cathodes in Lithium-Ion Batteries Using Surface Modification by Atomic Layer Deposition"",""Modification of nanoporous supported lyotropic liquid crystal polymer membranes by atomic layer deposition"",""Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD"",""Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO2 Layer for Nanocrystal Memory Device"",""Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices"",""Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition"",""Optical coatings in microscale channels by atomic layer deposition"",""Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors"",""Ni(III)/(IV) Bis(dicarbollide) as a Fast, Noncorrosive Redox Shuttle for Dye-Sensitized Solar Cells"",""Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition"",""Preparation and Elastic Properties of Helical Nanotubes Obtained by Atomic Layer Deposition with Carbon Nanocoils as Templates"",""Suppression of Forward Electron Injection from Ru(dcbpy)(2)(NCS)(2) to Nanocrystalline TiO2 Film As a Result of an Interfacial Al2O3 Barrier Layer Prepared with Atomic Layer Deposition"",""Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition"",""Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al2O3/TiO2 nanolaminates synthesized by atomic layer deposition"",""Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates"",""Low-temperature atomic layer deposited Al2O3 thin film on layer structure cathode for enhanced cycleability in lithium-ion batteries"",""Palladium Catalysts Synthesized by Atomic Layer Deposition for Methanol Decomposition"",""Surface and sub-surface reactions during low temperature aluminium oxide atomic layer deposition on fiber-forming polymers"",""Coverage Analysis for the Core/Shell Electrode of Dye-Sensitized Solar Cells"",""A bio-originated porous template for the fabrication of very long, inorganic nanotubes and nanowires"",""Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition"",""Temperature-Dependent Subsurface Growth during Atomic Layer Deposition on Polypropylene and Cellulose Fibers"",""Photo-Controlled Wettability Switching by Conformal Coating of Nanoscale Topographies with Ultrathin Oxide Films"",""Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films"",""Molecular Mechanisms of Aluminum Oxide Thin Film Growth on Polystyrene during Atomic Layer Deposition"",""Biofabrication methods for the patterned assembly and synthesis of viral nanotemplates"",""GaN Nanowire Functionalized with Atomic Layer Deposition Techniques for Enhanced Immobilization of Biomolecules"",""Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers"",""Deposited dielectrics on metal thin films using silicon and glass substrates for hot electron-induced electrochemiluminescence"",""Encapsulation of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposition"",""Effect of Weave Geometry on Surface Energy Modification of Textile Materials via Atomic Layer Deposition"",""Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide"",""Tin Monosulfide Thin Films Grown by Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide"",""Atomic Layer Deposition of Aluminum Oxide in Mesoporous Silica Gel"",""Thin film absorbers for visible, near-infrared, and short-wavelength infrared spectra"",""Mass Analysis of Growth of Al2O3 Thin Films from Low-Temperature Atomic Layer Deposition on Woven Cotton"",""CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns"",""Effect of corona pre-treatment on the performance of gas barrier layers applied by atomic layer deposition onto polymer-coated paperboard"",""Protecting Polymers in Space with Atomic Layer Deposition Coatings"",""Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition"",""Atomic layer deposited high-k nanolaminate capacitors"",""High-Speed Spatial Atomic-Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation"",""Surface texture and wetting stability of polydimethylsiloxane coated with aluminum oxide at low temperature by atomic layer deposition"",""Flexible Replication Technique for High-Aspect-Ratio Nanostructures""]","[[""R. L. Puurunen""],[""M. Putkonen"",""M. Nieminen"",""L. Niinist o""],[""S. J. Yun"",""K. H. Lee"",""J. Skarp"",""H. R. Kim"",""K. S. Nam""],[""Kemell, Marianna"",""F arm, Elina"",""Ritala, Mikko"",""Leskel a, Markku""],[""F arm, Elina"",""Kemell, Marianna"",""Ritala, Mikko"",""Leskel a, Markku""],[""F arm, Elina"",""Kemell, Marianna"",""Santala, Eero"",""Ritala, Mikko"",""Leskel a, Markku""],[""G. S. Higashi"",""L. J. Rothberg""],[""G. S. Higashi"",""C. G. Fleming""],[""C. Soto"",""W. T. Tysoe""],[""C. Soto"",""R. Wu"",""D. W. Bennett"",""W. T. Tysoe""],[""V. E. Drozd"",""A. P. Baraban"",""I. O. Nikiforova""],[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""],[""A. C. Dillon"",""A. W. Ott"",""J. D. Way"",""S. M. George""],[""E.-L. Lakomaa"",""A. Root"",""T. Suntola""],[""A. W. Ott"",""K. C. McCarley"",""J. W. Klaus"",""J. D. Way"",""S. M. George""],[""A. W. Ott"",""J. W. Klaus"",""J. M. Johnson"",""S. M. George""],[""A. W. Ott"",""J. W. Klaus"",""J. M. Johnson"",""S. M. George"",""K. C. McCarley"",""J. D. Way""],[""J. I. Skarp"",""P. J. Soininen"",""P. T. Soininen""],[""P. Ericsson"",""S. Bengtsson"",""J. Skarp""],[""Y. Kim"",""S. M. Lee"",""C. S. Park"",""S. I. Lee"",""M. Y. Lee""],[""B. S. Berland"",""I. P. Gartland"",""A. W. Ott"",""S. M. George""],[""M. Ritala"",""M. Leskela"",""J.-P. Dekker"",""C. Mutsaers"",""P. J. Soininen"",""J. Skarp""],[""M. Ritala"",""M. Juppo"",""K. Kukli"",""A. Rahtu"",""M. Leskel a""],[""R. Matero"",""M. Ritala"",""M. Leskela"",""T. Salo"",""J. Aromaa"",""O. Fors en""],[""E. P. Gusev"",""M. Copel"",""E. Cartier"",""I. J. R. Baumvol"",""C. Krug"",""M. A. Gribelyuk""],[""R. L. Puurunen"",""A. Root"",""S. Haukka"",""E. I. Iiskola"",""M. Lindblad"",""A. O. I. Krause""],[""A. M. Uusitalo"",""T. T. Pakkanen"",""M. Kr oger-Laukkanen"",""L. Niinist o"",""K. Hakala"",""S. Paavola"",""B. L ofgren""],[""M. Juppo"",""A. Rahtu"",""M. Ritala"",""M. Leskela""],[""R. Matero"",""A. Rahtu"",""M. Ritala"",""M. Leskela"",""T. Sajavaara""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""M. Juppo""],[""R. L. Puurunen"",""M. Lindblad"",""A. Root"",""A. O. I. Krause""],[""A. Rahtu"",""T. Alaranta"",""M. Ritala""],[""A. Paranjpe"",""S. Gopinath"",""T. Omstead"",""R. Bubber""],[""E. P. Gusev"",""E. Cartier"",""D. A. Buchanan"",""M. Gribelyuk"",""M. Copel"",""H. Okorn-Schmidt"",""C. D'Emic""],[""A. Rahtu""],[""R. Puurunen""],[""O. Sneh"",""R. B. Clark-Phelps"",""A. R. Londergan"",""J. Winkler"",""T. E. Seidel""],[""H. Nohira"",""W. Tsai"",""W. Besling"",""E. Young"",""J. Petry"",""T. Conard"",""W. Vandervorst"",""S. De Gendt"",""M. Heyns"",""J. Maes"",""M. Tuominen""],[""W. F. A. Besling"",""E. Young"",""T. Conard"",""C. Zhao"",""R. Carter"",""W. Vandervorst"",""M. Caymax"",""S. De Gendt"",""M. Heyns"",""J. Maes"",""M. Tuominen"",""S. Haukka""],[""L. G. Gosset"",""J.-F. Damlencourt"",""O. Renault"",""D. Rouchon"","". Holliger"",""A. Ermolieff"",""I. Trimaille"",""J.-J. Ganem"",""F. Martin"",""M.-N. S em eria""],[""J. W. Elam"",""Z. A. Sechrist"",""S. M. George""],[""J. W. Elam"",""M. D. Groner"",""S. M. George""],[""M. D. Groner"",""J. W. Elam"",""F. H. Fabreguette"",""S. M. George""],[""J. M. Jensen"",""A. B. Oelkers"",""R. Toivola"",""D. C. Johnson"",""J. W. Elam"",""S. M. George""],[""B. Brijs"",""C. Huyghebaert"",""S. Nauwelaerts"",""M. Caymax"",""W. Vandervorst"",""K. Nakajima"",""K. Kimura"",""A. Bergmaier"",""G. D ollinger"",""W. N. Lennard"",""G. Terwagne"",""A. Vantomme""],[""J. W. Elam"",""S. M. George""],[""T. M. Mayer"",""J. W. Elam"",""S. M. George"",""P. G. Kotula"",""R. S. Goeke""],[""N. D. Hoivik"",""J. W. Elam"",""R. J. Linderman"",""V. M. Bright"",""S. M. George"",""Y. C. Lee""],[""R. Kuse"",""M. Kundu"",""T. Yasuda"",""N. Miyata"",""A. Toriumi""],[""S. Jakschik"",""U. Schroeder"",""T. Hecht"",""M. Gutsche"",""H. Seidl"",""J. W. Bartha""],[""S. Jakschik"",""U. Schroeder"",""T. Hecht"",""D. Krueger"",""G. Dollinger"",""A. Bergmaier"",""C. Luhmann"",""J. W. Bartha""],[""R. L. Puurunen""],[""J.-F. Damlencourt"",""O. Renault"",""A. Chabli"",""F. Martin"",""M.-N. S em eria""],[""M. M. Frank"",""Y. J. Chabal"",""G. D. Wilk""],[""M. M. Frank"",""Y. J. Chabal"",""M. L. Green"",""A. Delabie"",""B. Brijs"",""G. D. Wilk"",""M.-Y. Ho"",""E. B. O. da Rosa"",""I. J. R. Baumvol"",""F. C. Stedile""],[""P. D. Ye"",""G. D. Wilk"",""B. Yang"",""J. Kwo"",""S. N. G. Chu"",""S. Nakahara"",""H.-J. L. Gossmann"",""J. P. Mannaerts"",""M. Hong"",""K. K. Ng"",""J. Bude""],[""J. S. Lee"",""B. Min"",""K. Cho"",""S. Kim"",""J. Park"",""Y. T. Lee"",""N. S. Kim"",""M. S. Lee"",""S. O. Park"",""J. T. Moon""],[""M. D. Groner"",""F. H. Fabreguette"",""J. W. Elam"",""S. M. George""],[""T. Kawahara"",""K. Torii"",""R. Mitsuhashi"",""A. Muto"",""A. Horiuchi"",""H. Ito"",""H. Kitajima""],[""S. Jakschik"",""U. Schroeder"",""T. Hecht"",""D. Krueger"",""G. Dollinger"",""A. Bergmaier"",""C. Luhmann"",""J. W. Bartha""],[""R. L. Puurunen"",""W. Vandervorst"",""W. F. A. Besling"",""O. Richard"",""H. Bender"",""T. Conard"",""C. Zhao"",""A. Delabie"",""M. Caymax"",""S. De Gendt"",""M. Heyns"",""M. M. Viitanen"",""M. de Ridder"",""H. H. Brongersma"",""Y. Tamminga"",""T. Dao"",""T. de Win"",""M. Verheijen"",""M. Kaiser"",""M. Tuominen""],[""R. L. Puurunen"",""W. Vandervorst""],[""R. T. Brewer"",""M.-T. Ho"",""K. Z. Zhang"",""L. V. Goncharova"",""D. G. Starodub"",""T. Gustafsson"",""Y. J. Chabal"",""N. Moumen""],[""R. K. Grubbs"",""C. E. Nelson"",""N. J. Steinmetz"",""S. M. George""],[""S. S. Lee"",""J. Y. Baik"",""K.-S. An"",""Y. D. Suh"",""J.-H. Oh"",""Y. Kim""],[""M. Kang"",""J.-S. Lee"",""S.-K. Sim"",""B. Min"",""K. Cho"",""H. Kim"",""M.-Y. Sung"",""S. Kim"",""S. A. Song"",""M.-S. Lee""],[""C. Lee"",""J. Choi"",""M. Cho"",""J. Park"",""C. S. Hwang"",""H. J. Kim"",""J. Jeong""],[""R. G. Vitchev"",""J. J. Pireaux"",""T. Conard"",""H. Bender"",""J. Wolstenholme"",""C. Defranoux""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""H. Bender"",""Th. Conard"",""O. Richard"",""B. Brijs"",""J. P etry"",""W. Vandervorst"",""C. Defranoux"",""P. Boher"",""N. Rochat"",""C. Wyon"",""P. Mack"",""J. Wolstenholme"",""R. Vitchev"",""L. Houssiau"",""J.-J. Pireaux"",""A. Bergmaier"",""G. Dollinger""],[""P. Boher"",""C. Defranoux"",""P. Heinrich"",""J. Wolstenholme"",""H. Bender""],[""C. Lee"",""C. S. Hwang"",""H. J. Kim""],[""R. Matero""],[""D. Wu"",""J. Lu"",""E. Vainonen-Ahlgren"",""E. Tois"",""M. Tuominen"",""M. Ostling"",""S.-L. Zhang""],[""D. R. G. Mitchell"",""D. J. Attard"",""K. S. Finnie"",""G. Triani"",""C. J. Barb e"",""C. Depagne"",""J. R. Bartlett""],[""S.-H. K. Park"",""J. Oh"",""C.-S. Hwang"",""J.-I. Lee"",""Y. S. Yang"",""H. Y. Chu""],[""Yadavalli, K. K."",""Orlov, A. O."",""Snider, G. L."",""Elam, J.""],[""Xiong, G."",""Elam, J. W."",""Feng, H."",""Han, C. Y."",""Wang, H. H."",""Iton, L. E."",""Curtiss, L. A."",""Pellin, M. J."",""Kung, M."",""Kung, H."",""Stair, P. C.""],[""Wilson, C.A."",""Grubbs, R.K."",""George, S.M.""],[""Wielunski, L. S."",""Chabal, Y."",""Paunescu, M."",""Ho, M. T."",""Brewer, R."",""Reyes, J. E.""],[""Gao, K. Y."",""Seyller, B."",""Emtsev, K."",""Ley, L."",""Ciobanu, F."",""Pensl, G.""],[""Whitney, A. V."",""Elam, J. W."",""Zou, S. L."",""Zinovev, A. V."",""Stair, P. C."",""Schatz, G. C."",""Van Duyne, R. P.""],[""M. K. Tripp"",""F. Fabreguette"",""C. F. Herrmann"",""S. M. George"",""V. M. Bright""],[""Stesmans, A."",""Afanas'ev, V. V.""],[""Seidel, T."",""Kim, G. Y."",""Srivastava, A."",""Karim, Z.""],[""Sechrist, Z. A."",""Fabreguette, F. H."",""Heintz, O."",""Phung, T. M."",""Johnson, D. C."",""George, S. M.""],[""Park, M."",""Koo, J."",""Kim, J."",""Jeon, H."",""Bae, C."",""Krug, C.""],[""Koo, J."",""Lee, J."",""Kim, S."",""Do Kim, Y."",""Jeon, H."",""Kim, D. S."",""Kim, Y.""],[""Koo, J."",""Jeon, H.""],[""Kawakami, N."",""Yokota, Y."",""Tachibana, T."",""Hayashi, K."",""Kobashi, K.""],[""Huang, M. L."",""Chang, Y. C."",""Chang, C. H."",""Lee, Y. J."",""Chang, P."",""Kwo, J."",""Wu, T. B."",""Hong, M.""],[""Herrmann, C. F."",""Fabreguette, F. H."",""Finch, D. S."",""Geiss, R."",""George, S. M.""],[""Hakim, L. F."",""George, S. M."",""Weimer, A. W.""],[""Hakim, L. F."",""Blackson, J."",""George, S. M."",""Weimer, A. W.""],[""Seong, N. J."",""Yoon, S. G."",""Yeom, S. J."",""Woo, H. K."",""Kil, D. S."",""Roh, J. S."",""Sohn, H. C.""],[""Farmer, D. B."",""Gordon, R. G.""],[""Elam, J. W."",""Pellin, M. J.""],[""Cho, M."",""Park, H. B."",""Park, J."",""Lee, S. W."",""Hwang, C. S."",""Jeong, J."",""Kang, H. S."",""Kim, Y. W.""],[""Yasseri, A. A."",""Kobayashi, N. P."",""Kamins, T. I.""],[""Yang, W. S."",""Kang, S. W.""],[""Xu, M."",""Zhang, C."",""Ding, S. J."",""Lu, H. L."",""Chen, W."",""Sun, Q. Q."",""Zhang, D. W."",""Wang, L. K.""],[""Xu, M."",""Xu, C. H."",""Ding, S. J."",""Lu, H. L."",""Zhang, D. W."",""Wang, L. K.""],[""Stoldt, C. R."",""Bright, V. M.""],[""Sechrist, Z. A."",""Schwartz, B. T."",""Lee, J. H."",""McCormick, J. A."",""Piestun, R."",""Park, W."",""George, S. M.""],[""Moghtaderi, B."",""Shames, I."",""Doroodchi, E.""],[""Mitchell, D. R. G."",""Triani, G."",""Attard, D. J."",""Finnie, K. S."",""Evans, P. J."",""Barb e, C. J."",""Bartlett, J. R.""],[""Min, Y. S."",""Asanov, I. P."",""Hwang, C. S.""],[""Lu, H. L."",""Sun, L."",""Ding, S. J."",""Xu, M."",""Zhang, D. W."",""Wang, L. K.""],[""Lu, Hong-Liang"",""Li, Yan-Bo"",""Xu, Min"",""Ding, Shi-Jin"",""Sun, Liang"",""Zhang, Wei"",""Wang, Li-Kang""],[""Lee, K. Y."",""Lee, W. C."",""Lee, Y. J."",""Huang, M. L."",""Chang, C. H."",""Wu, T. B."",""Hong, M."",""Kwo, J.""],[""Knez, M."",""Kadri, A."",""Wege, C."",""G osele, U."",""Jeske, H."",""Nielsch, K.""],[""Kim, H. J."",""Kim, M. W."",""Kim, H. S."",""Kim, H. S."",""Kim, S. H."",""Lee, S. W."",""Choi, B. H."",""Jeong, B. K."",""Lee, H. H.""],[""Hakim, L. F."",""McCormick, J. A."",""Zhan, G. D."",""Weimer, A. W."",""Li, P."",""George, S. M.""],[""Groner, M. D."",""George, S. M."",""McLean, R. S."",""Carcia, P. F.""],[""Elliott, S. D."",""Scarel, G."",""Wiemer, C."",""Fanciulli, M."",""Pavia, G.""],[""Song, H. W."",""Han, W. S."",""Kim, J."",""Kim, J. H."",""KoPark, S. H.""],[""Graugnard, E."",""King, J. S."",""Gaillot, D. P."",""Summers, C. J.""],[""Fan, H. J."",""Knez, M."",""Scholz, R."",""Nielsch, K."",""Pippel, E."",""Hesse, D."",""G osele, U."",""Zacharias, M.""],[""Fabreguette, F. H."",""Wind, R. A."",""George, S. M.""],[""Kim, I."",""Koo, J."",""Lee, J."",""Jeon, H.""],[""Zhang, X. H."",""Domercq, B."",""Wang, X. D."",""Yoo, S."",""Kondo, T."",""Wang, Z. L."",""Kippelen, B.""],[""Zhang, L."",""Jiang, H. C."",""Liu, C."",""Dong, J. W."",""Chow, P.""],[""Wang, C. C."",""Kei, C. C."",""Yu, Y. W."",""Perng, T. P.""],[""Tanner, C. M."",""Sawkar-Mathur, M."",""Lu, J."",""Blom, H. O."",""Toney, M. F."",""Chang, J. P.""],[""Tanner, C. M."",""Perng, Y. C."",""Frewin, C."",""Saddow, S. E."",""Chang, J. P.""],[""Ras, R. H. A."",""Kemell, M."",""de Wit, J."",""Ritala, M."",""ten Brinke, G."",""Leskel a, M."",""Ikkala, O.""],[""R. L. Puurunen"",""J. Saarilahti"",""H. Kattelus""],[""Peng, Q."",""Sun, X. Y."",""Spagnola, J. C."",""Hyde, G. K."",""Spontak, R. J."",""Parsons, G. N.""],[""McCormick, J. A."",""Rice, K. P."",""Paul, D. F."",""Weimer, A. W."",""George, S. M.""],[""McCormick, J. A."",""Cloutier, B. L."",""Weimer, A. W."",""George, S. M.""],[""Liang, X. H."",""Hakim, L. F."",""Zhan, G. D."",""McCormick, J. A."",""George, S. M."",""Weimer, A. W."",""Spencer, J. A."",""Buechler, K. J."",""Blackson, J."",""Wood, C. J."",""Dorgan, J. R.""],[""Liang, X. H."",""George, S. M."",""Weimer, A. W.""],[""Lee, D."",""Seidel, T."",""Dalton, J."",""Liu, T. J. K.""],[""Kobayashi, N. P."",""Donley, C. L."",""Wang, S. Y."",""Williams, R. S.""],[""Ko, C. H."",""Lee, W. J.""],[""Kim, S. Y."",""Kwon, H."",""Jo, S. J."",""Ha, J. S."",""Park, W. T."",""Kang, D. K."",""Kim, B. H.""],[""J ogi, I."",""Kukli, K."",""Kemell, M."",""Ritala, M."",""Leskel a, M.""],[""Hyde, G. K."",""Park, K. J."",""Stewart, S. M."",""Hinestroza, J. P."",""Parsons, G. N.""],[""Herrmann, C. F."",""DelRio, F. W."",""Miller, D. C."",""George, S. M."",""Bright, V. M."",""Ebel, J. L."",""Strawser, R. E."",""Cortez, R."",""Leedy, K. D.""],[""Lu, H. L."",""Xu, M."",""Ding, S. J."",""Chen, W."",""Zhang, D. W."",""Wang, L. K.""],[""van Hemmen, J. L."",""Heil, S. B. S."",""Klootwijk, J. H."",""Roozeboom, F."",""Hodson, C. J."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""],[""Hakim, L. F."",""Vaughn, C. L."",""Dunsheath, H. J."",""Carney, C. S."",""Liang, X."",""Li, P."",""Weimer, A. W.""],[""Hakim, L. F."",""Blackson, J. H."",""Weimer, A. W.""],[""Hahtela, O."",""Sievil a, P."",""Chekurov, N."",""Tittonen, I.""],[""Gao, K. Y."",""Speck, F."",""Emtsev, K."",""Seyller, T."",""Ley, L.""],[""Frank, M. M."",""Wang, Y."",""Ho, M. T."",""Brewer, R. T."",""Moumen, N."",""Chabal, Y. J.""],[""Ferrari, S."",""Perissinotti, F."",""Peron, E."",""Fumagalli, L."",""Natali, D."",""Sampietro, M.""],[""Fabreguette, F. H."",""George, S. M.""],[""Chiou, Y. K."",""Chang, C. H."",""Wang, C. C."",""Lee, K. Y."",""Wu, T. B."",""Kwo, R."",""Hong, M. H.""],[""Chen, M. J."",""Shih, Y. T."",""Wu, M. K."",""Tsai, F. Y.""],[""Chekurov, N."",""Koskenvuori, M."",""Airaksinen, V. M."",""Tittonen, I.""],[""Chang, C. H."",""Chiou, Y. K."",""Hsu, C. W."",""Wu, T. B.""],[""Tapily, K."",""Jakes, J. E."",""Stone, D. S."",""Shrestha, P."",""Gu, D."",""Baumgart, H."",""Elmustafa, A. A.""],[""Maikap, S."",""Tzeng, P. J."",""Wang, T. Y."",""Lin, C. H."",""Lee, L. S."",""Yang, J. R."",""Tsai, M. J.""],[""Hou, C. H."",""Chen, M. C."",""Chang, C. H."",""Wu, T. B."",""Chiang, C. D."",""Luo, J. J.""],[""Yang, Y."",""Kim, D. S."",""Scholz, R."",""Knez, M."",""Lee, S. M."",""G osele, U."",""Zacharias, M.""],[""Yang, Y."",""Kim, D.S."",""Knez, M."",""Scholz, R."",""Berger, A."",""Pippel, E."",""Hesse, D."",""G osele, U."",""Zacharias, M.""],[""Xuan, Y."",""Wu, Y. Q."",""Shen, T."",""Qi, M."",""Capano, M. A."",""Cooper, J. A."",""Ye, P. D.""],[""Sung, J."",""Kosuda, K. M."",""Zhao, J."",""Elam, J. W."",""Spears, K. G."",""Van Duyne, R. P.""],[""Shin, B."",""Choi, D."",""Harris, J. S."",""Mclntyre, P. C.""],[""Qin, Y."",""Lee, S. M."",""Pan, A."",""G osele, U."",""Knez, M.""],[""Preiner, M. J."",""Melosh, N. A.""],[""Meyer, J."",""G orrn, P."",""Hamwi, S."",""Johannes, H. H."",""Riedl, T."",""Kowalsky, W.""],[""Luo, Y."",""Du, Y."",""Misra, V.""],[""Xinhua Liang"",""Guo-Dong Zhan"",""David M. King"",""Jarod A. McCormick"",""John Zhang"",""Steven M. George"",""Alan W. Weimer""],[""Lee, B. K."",""Park, S. Y."",""Kim, H. C."",""Cho, K."",""Vogel, E. M."",""Kim, M. J."",""Wallace, R. M."",""Kim, J. Y.""],[""Huang, J. Y."",""Liu, S."",""Wang, Y."",""Ye, Z. Z.""],[""Jingyun Huang"",""Xudong Wang"",""Zhong Lin Wang""],[""Grigoras, K."",""Franssila, S."",""Airaksinen, V. M.""],[""Ding, Y."",""Xu, S."",""Zhang, Y."",""Wang, A. C."",""Wang, M. H."",""Xiu, Y. H."",""Wong, C. P."",""Wang, Z. L.""],[""Russell Cooper"",""Hari P. Upadhyaya"",""Timothy K. Minton"",""Michael R. Berman"",""Xiaohua Du"",""Steven M. George""],[""Bae, C. D."",""Kim, S. Y."",""Ahn, B. Y."",""Kim, J. Y."",""Sung, M. M."",""Shin, H. J.""],[""Sawkar-Mathur, Monica"",""Perng, Ya-Chuan"",""Lu, Jun"",""Blom, Hans-Olof"",""Bargar, John"",""Chang, Jane P.""],[""Milojevic, M."",""Hinkle, C. L."",""Aguirre-Tostado, F. S."",""Kim, H. C."",""Vogel, E. M."",""Kim, J."",""Wallace, R. M.""],[""Kemell, Marianna"",""Ritala, Mikko"",""Leskel a, Markku"",""Groenen, Roland"",""Lindfors, Sven""],[""Kautzky, Michael C."",""Demtchouk, Alexandre V."",""Chen, Yonghua"",""Brown, Kelly M."",""McKinlay, Shaun E."",""Xue, Jianhua""],[""Na, Jeong-Seok"",""Ayres, Jennifer A."",""Chandra, Kusum L."",""Gorman, Christopher B."",""Parsons, Gregory N.""],[""Yang, Yang"",""Scholz, Roland"",""Berger, Andreas"",""Kim, Dong Sik"",""Knez, Mato"",""Hesse, Dieirich"",""G osele, Ulrich"",""Zacharias, Margit""],[""Byoung H. Lee"",""Kwang H. Lee"",""Seongil Im"",""Myung M. Sung""],[""Kobayashi, Nobuhiko P."",""Williams, R. Stanley""],[""Kim, D. S."",""Lee, S. -M."",""Scholz, R."",""Knez, M."",""G osele, U."",""Fallert, J."",""Kalt, H."",""Zacharias, M.""],[""Ghiraldelli, E."",""Pelosi, C."",""Gombia, E."",""Chiavarotti, G."",""Vanzetti, L.""],[""Xinhua Liang"",""David M. King"",""Markus D. Groner"",""John H. Blackson"",""Joseph D. Harris"",""Steven M. George"",""Alan W. Weimer""],[""Qin, Yong"",""Liu, Lifeng"",""Yang, Renbin"",""G osele, Ulrich"",""Knez, Mato""],[""Chih-Yu Chang"",""Feng-Yu Tsai"",""Syue-Jhao Jhuo"",""Miin-Jang Chen""],[""Finch, Dudley S."",""Oreskovic, Tammy"",""Ramadurai, Krishna"",""Herrmann, Cari F."",""George, Steven M."",""Mahajan, Roop L.""],[""Cheng, Chao-Ching"",""Chien, Chao-Hsin"",""Luo, Guang-Li"",""Liu, Jun-Cheng"",""Kei, Chi-Chung"",""Liu, Da-Ren"",""Hsiao, Chien-Nan"",""Yang, Chun-Hui"",""Changa, Chun-Yen""],[""Ghiraldelli, Elisa"",""Pelosi, Claudio"",""Gombia, Enos"",""Frigeri, Cesare"",""Vanzetti, Lia"",""Abdullayeva, Sevda""],[""Liu, Z. H."",""Ng, G. I."",""Arulkumaran, S."",""Maung, Y. K. T."",""Teo, K. L."",""Foo, S. C."",""Sahmuganathan, V.""],[""Na, Jeong-Seok"",""Peng, Qing"",""Scarel, Giovanna"",""Parsons, Gregory N.""],[""Levy, David H."",""Nelson, Shelby F."",""Freeman, Diane""],[""Brzezinski, Andrew"",""Chen, Ying-Chieh"",""Wiltzius, Pierre"",""Braun, Paul V.""],[""Kim, Eun Ji"",""Chagarov, Evgueni"",""Cagnon, Joel"",""Yuan, Yu"",""Kummel, Andrew C."",""Asbeck, Peter M."",""Stemmer, Susanne"",""Saraswat, Krishna C."",""McIntyre, Paul C.""],[""Henkel, Christoph"",""Abermann, Stephan"",""Bethge, Ole"",""Bertagnolli, Emmerich""],[""Zhao, Yufei"",""Wei, Min"",""Lu, Jun"",""Wang, Zhong Lin"",""Duan, Xue""],[""Na, Jeong-Seok"",""Gong, Bo"",""Scarel, Giovanna"",""Parsons, Gregory N.""],[""Fenwick, William E."",""Li, Nola"",""Xu, Tianming"",""Melton, Andrew"",""Wang, Shenjie"",""Yu, Hongbo"",""Summers, Christopher"",""Jamil, Muhammad"",""Ferguson, Ian T.""],[""Chang, Yuan-Jen"",""Gray, Jason M."",""Imtiaz, Atif"",""Seghete, Dragos"",""Wallis, T. Mitch"",""George, Steven M."",""Kabos, Pavel"",""Rogers, Charles T."",""Bright, Victor M.""],[""Sun, Edward"",""Su, Fu-Hsiang"",""Shih, Ying-Tsang"",""Tsai, Hung-Ling"",""Chen, Ching-Huang"",""Wu, Mong-Kai"",""Yang, Jer-Ren"",""Chen, Miin-Jang""],[""Liang, Xinhua"",""Lynn, Aaron D."",""King, David M."",""Bryant, Stephanie J."",""Weimer, Alan W.""],[""Beetstra, Renske"",""Lafont, Ugo"",""Nijenhuis, John"",""Kelder, Erik M."",""van Ommen, J. Ruud""],[""Kumar, Pradeep"",""Wiedmann, Monika K."",""Winter, Charles H."",""Avrutsky, Ivan""],[""Qian, Lihua"",""Shen, Wen"",""Das, Biswajit"",""Shen, Bo"",""Qin, Gaowu W.""],[""Hwang, Dae-Kue"",""Noh, Heeso"",""Cao, Hui"",""Chang, Robert P. H.""],[""Wang, Yong"",""Qin, Yong"",""Berger, Andreas"",""Yau, Eric"",""He, Changcheng"",""Zhang, Lianbing"",""G osele, Ulrich"",""Knez, Mato"",""Steinhart, Martin""],[""Carcia, P. F."",""McLean, R. S."",""Groner, M. D."",""Dameron, A. A."",""George, S. M.""],[""Graugnard, E."",""Roche, O. M."",""Dunham, S. N."",""King, J. S."",""Sharp, D. N."",""Denning, R. G."",""Turberfield, A. J."",""Summers, C. J.""],[""Wind, R. W."",""Fabreguette, F. H."",""Sechrist, Z. A."",""George, S. M.""],[""Caymax, Matty"",""Brammertz, Guy"",""Delabie, Annelies"",""Sioncke, Sonja"",""Lin, Dennis"",""Scarrozza, Marco"",""Pourtois, Geoffrey"",""Wang, Wei-E"",""Meuris, Marc"",""Heyns, Marc""],[""Bethge, Ole"",""Abermann, Stephan"",""Henkel, Christoph"",""Bertagnolli, Emmerich""],[""Gabriel, Nicholas T."",""Kim, Sangho S."",""Talghader, Joseph J.""],[""Lee, Won-Kyu"",""Oh, Byeong-Yun"",""Lim, Ji-Hun"",""Park, Hong-gyu"",""Kim, Byoung-Yong"",""Na, Hyun-Jae"",""Seo, Dae-Shik""],[""Cavanagh, Andrew S."",""Wilson, Christopher A."",""Weimer, Alan W."",""George, Steven M.""],[""Meyer, Jens"",""Goerrn, Patrick"",""Bertram, Franz"",""Hamwi, Sami"",""Winkler, Thomas"",""Johannes, Hans-Hermann"",""Weimann, Thomas"",""Hinze, Peter"",""Riedl, Thomas"",""Kowalsky, Wolfgang""],[""Kim, N."",""Potscavage, Jr., W. J."",""Domercq, B."",""Kippelen, B."",""Graham, S.""],[""Lin, Ching"",""Tsai, Feng-Yu"",""Lee, Min-Hsueh"",""Lee, Chia-Hua"",""Tien, Ta-Chang"",""Wang, Lih-Ping"",""Tsai, Song-Yeu""],[""Lee, Seung-Mo"",""Grass, Gregor"",""Kim, Gyeong-Man"",""Dresbach, Christian"",""Zhang, Lianbing"",""G osele, Ulrich"",""Knez, Mato""],[""Banerjee, Parag"",""Perez, Israel"",""Henn-Lecordier, Laurent"",""Lee, Sang Bok"",""Rubloff, Gary W.""],[""Bethge, Ole"",""Abermann, Stephan"",""Henkel, Christoph"",""Straif, Christoph J."",""Hutter, Herbert"",""Bertagnolli, Emmerich""],[""Avci, N."",""Musschoot, J."",""Smet, P. F."",""Korthout, K."",""Avci, A."",""Detavernier, C."",""Poelman, D.""],[""Kim, J. B."",""Fuentes-Hernandez, C."",""Potscavage, Jr., W. J."",""Zhang, X. -H."",""Kippelen, B.""],[""Peng, Qing"",""Sun, Xiao-Yu"",""Spagnola, Joseph C."",""Saquing, Carl"",""Khan, Saad A."",""Spontak, Richard J."",""Parsons, Gregory N.""],[""Sun, W. C."",""Chang, W. L."",""Chen, C. H."",""Du, C. H."",""Wang, T. Y."",""Wang, T."",""Lan, C. W.""],[""Szeghalmi, Adriana"",""Helgert, Michael"",""Brunner, Robert"",""Heyroth, Frank"",""G osele, Ulrich"",""Knez, Mato""],[""Hahtela, Ossi M."",""Satrapinski, Alexandre F."",""Sievil a, P aivi H."",""Chekurov, Nikolai""],[""Preiner, Michael J."",""Melosh, Nicholas A.""],[""Standridge, Stacey D."",""Schatz, George C."",""Hupp, Joseph T.""],[""Lie, F. L."",""Rachmady, W."",""Muscat, A. J.""],[""Kim, Seyoung"",""Nah, Junghyo"",""Jo, Insun"",""Shahrjerdi, Davood"",""Colombo, Luigi"",""Yao, Zhen"",""Tutuc, Emanuel"",""Banerjee, Sanjay K.""],[""Li, Meng"",""Dai, Min"",""Chabal, Yves J.""],[""Moon, Jeong-Mi"",""Akin, Demir"",""Xuan, Yi"",""Ye, Peide D."",""Guo, Peixuan"",""Bashir, Rashid""],[""Hsieh, Chun-I."",""Pan, Tung-Ming"",""Lin, Jian-Chyi"",""Peng, Yan-Bo"",""Huang, Tsai-Yu"",""Wu, Chang-Rong"",""Shih, Steven""],[""King, David M."",""Zhou, Yun"",""Hakim, Luis F."",""Liang, Xinhua"",""Li, Peng"",""Weimer, Alan W.""],[""Lamagna, L."",""Scarel, G."",""Fanciulli, M."",""Pavia, G.""],[""Sioncke, Sonja"",""Delabie, Annelies"",""Brammertz, Guy"",""Conard, Thierry"",""Franquet, Alexis"",""Caymax, Matty"",""Urbanzcyk, Adam"",""Heyns, Marc"",""Meuris, Marc"",""van Hemmen, J. L."",""Keuning, W."",""Kessels, W. M. M.""],[""Dendooven, J."",""Deduytsche, D."",""Musschoot, J."",""Vanmeirhaeghe, R. L."",""Detavernier, C.""],[""Feng, Junbo"",""Chen, Yao"",""Blair, John"",""Kurt, Hamza"",""Hao, Ran"",""Citrin, D. S."",""Summers, Christopher J."",""Zhou, Zhiping""],[""Wang, Chih-Chieh"",""Kei, Chi-Chung"",""Tao, Ye"",""Perng, Tsong-Pyng""],[""Ganapathy, V."",""Karunagaran, B."",""Rhee, Shi-Woo""],[""Adelmann, Christoph"",""Pierreux, Dieter"",""Swerts, Johan"",""Dewulf, Dann"",""Hardy, An"",""Tielens, Hilde"",""Franquet, Alexis"",""Brijs, Bert"",""Moussa, Alain"",""Conard, Thierry"",""Van Bael, Marlies K."",""Maes, Jan W."",""Jurczak, Malgorzata"",""Kittl, Jorge A."",""Van Elshocht, Sven""],[""Hirvikorpi, Terhi"",""V ah a-Nissi, Mika"",""Harlin, Ali"",""Karppinen, Maarit""],[""Qian, Lihua"",""Shen, Wen"",""Shen, Bo"",""Qin, Gaowu W."",""Das, Biswajit""],[""Aslan, Mustafa M."",""Webster, Nathan A."",""Byard, Courtney L."",""Pereira, Marcelo B."",""Hayes, Colin M."",""Wiederkehr, Rodrigo S."",""Mendes, Sergio B.""],[""Wind, R. A."",""George, S. M.""],[""Na, Jeong-Seok"",""Scarel, Giovanna"",""Parsons, Gregory N.""],[],[],[""Hyde, G. Kevin"",""Scarel, Giovanna"",""Spagnola, Joseph C."",""Peng, Qing"",""Lee, Kyoungmi"",""Gong, Bo"",""Roberts, Kim G."",""Roth, Kelly M."",""Hanson, Christopher A."",""Devine, Christina K."",""Stewart, S. Michael"",""Hojo, Daisuke"",""Na, Jeong-Seok"",""Jur, Jesse S."",""Parsons, Gregory N.""],[""John, Joshy F."",""Mahurin, Shannon"",""Dai, Sheng"",""Sepaniak, Michael J.""],[""Gu, Diefeng"",""Baumgart, Helmut"",""Abdel-Fattah, Tarek M."",""Namkoong, Gon""],[""Comstock, David J."",""Elam, Jeffrey W."",""Pellin, Michael J."",""Hersam, Mark C.""],[""Jung, Yoon Seok"",""Cavanagh, Andrew S."",""Dillon, Anne C."",""Groner, Markus D."",""George, Steven M."",""Lee, Se-Hee""],[""Liang, Xinhua"",""Lu, Xiaoyun"",""Yu, Miao"",""Cavanagh, Andrew S."",""Gin, Douglas L."",""Weimer, Alan W.""],[""Dingemans, G."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""],[""Seo, Il"",""Lee, Do-Joong"",""Hu, Quanli"",""Kwon, Chang-Woo"",""Lim, Kipil"",""Lee, Seung-Hyun"",""Kim, Hyun-Mi"",""Kim, Yong-Sang"",""Lee, Hyun Ho"",""Ryu, Du Yeol"",""Kim, Ki-Bum"",""Yoon, Tae-Sik""],[""Swaminathan, Shankar"",""Shandalov, Michael"",""Oshima, Yasuhiro"",""McIntyre, Paul C.""],[""Dingemans, G."",""Seguin, R."",""Engelhart, P."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""],[""Gabriel, Nicholas T."",""Talghader, Joseph J.""],[""Park, Hyun Hee"",""Kang, Pil Soo"",""Kim, Gyu Tae"",""Ha, Jeong Sook""],[""Li, Tina C."",""Spokoyny, Alexander M."",""She, Chunxing"",""Farha, Omar K."",""Mirkin, Chad A."",""Marks, Tobin J."",""Hupp, Joseph T.""],[""Scarel, Giovanna"",""Na, Jeong-Seok"",""Parsons, Gregory N.""],[""Qin, Yong"",""Kim, Yunseok"",""Zhang, Lianbing"",""Lee, Seung-Mo"",""Yang, Ren Bin"",""Pan, AnLian"",""Mathwig, Klaus"",""Alexe, Marin"",""G osele, Ulrich"",""Knez, Mato""],[""Antila, Liisa J."",""Heikkil a, Mikko J."",""Aumanen, Viivi"",""Kemell, Marianna"",""Myllyperki o, Pasi"",""Leskel a, Markku"",""Korppi-Tommola, Jouko E. I.""],[""Sun, Edward"",""Su, Fu-Hsiang"",""Chen, Ching-Huang"",""Chen, Miin-Jang""],[""Li, Wei"",""Auciello, Orlando"",""Premnath, Ramesh N."",""Kabius, Bernd""],[""Shin, Byungha"",""Weber, Justin R."",""Long, Rathnait D."",""Hurley, Paul K."",""Van de Walle, Chris G."",""McIntyre, Paul C.""],[""Lee, Jyh-Tsung"",""Wang, Fu-Ming"",""Cheng, Chin-Shu"",""Li, Chia-Chen"",""Lin, Chun-Hao""],[""Feng, Hao"",""Elam, Jeffrey W."",""Libera, Joseph A."",""Setthapun, Worajit"",""Stair, Peter C.""],[""Spagnola, Joseph C."",""Gong, Bo"",""Arvidson, Sara A."",""Jur, Jesse S."",""Khan, Saad A."",""Parsons, Gregory N.""],[""Tien, Ta-Chang"",""Pan, Fu-Ming"",""Wang, Lih-Ping"",""Tsai, Feng-Yu"",""Lin, Ching""],[""Mumm, F."",""Kemell, M."",""Leskel a, M."",""Sikorski, P.""],[""Dendooven, J."",""Deduytsche, D."",""Musschoot, J."",""Vanmeirhaeghe, R. L."",""Detavernier, C.""],[""Jur, Jesse S."",""Spagnola, Joseph C."",""Lee, Kyoungmi"",""Gong, Bo"",""Peng, Qing"",""Parsons, Gregory N.""],[""Malm, Jari"",""Sahramo, Elina"",""Karppinen, Maarit"",""Ras, Robin H. A.""],[""Potts, S. E."",""Keuning, W."",""Langereis, E."",""Dingemans, G."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""],[""Puttaswamy, Manjunath"",""Haugsh j, Kenneth Brian"",""Christensen, Leif Hojslet"",""Kingshott, Peter""],[""Gerasopoulos, K."",""McCarthy, M."",""Banerjee, P."",""Fan, X."",""Culver, J. N."",""Ghodssi, R.""],[""Guo, D. J."",""Abdulagatov, A. I."",""Rourke, D. M."",""Bertness, K. A."",""George, S. M."",""Lee, Y. C."",""Tan, W.""],[""Peng, Qing"",""Tseng, Yu-Chih"",""Darling, Seth B."",""Elam, Jeffrey W.""],[""Antti J. Niskanen"",""Tiina Ylinen-Hinkka"",""Matti Pusa"",""Sakari Kulmala"",""Sami Franssila""],[""Smita Sarkar"",""Jason H. Culp"",""Jon T. Whyland"",""Margret Garvan"",""Veena Misra""],[""Roth, Kelly M."",""Roberts, Kim G."",""Hyde, G. Kevin""],[""Florian Werner"",""Boris Veith"",""Veronica Tiba"",""Paul Poodt"",""Fred Roozeboom"",""Rolf Brendel"",""Jan Schmidt""],[""Kim, Jay Yu"",""George, Steven M.""],[""Elam, Jeffrey W."",""Libera, Joseph A."",""Huynh, Trang H."",""Feng, Hao"",""Pellin, Michael J.""],[""M. Laamanen"",""M. Blomberg"",""R.L. Puurunen"",""A. Miranto"",""H. Kattelus""],[""Hojo, Daisuke"",""Adschiri, Tadafumi""],[""G Gay"",""T Baron"",""C Agraffeil"",""B Salhi"",""T Chevolleau"",""G Cunge"",""H Grampeix"",""J-H Tortai"",""F Martin"",""E Jalaguier"",""B De Salvo""],[""Terhi Hirvikorpi"",""Mika V ah a-Nissi"",""Ali Harlin"",""Jaana Marles"",""Ville Miikkulainen"",""Maarit Karppinen""],[""Minton, Timothy K."",""Wu, Bohan"",""Zhang, Jianming"",""Lindholm, Ned F."",""Abdulagatov, Aziz I."",""O'Patchen, Jennifer"",""George, Steven M."",""Groner, Markus D.""],[""Yan Xu"",""Lin Chen"",""Qing-Qing Sun"",""Jing-Jing Gu"",""Hong-Liang Lu"",""Peng-Fei Wang"",""Shi-Jin Ding"",""David Wei Zhang""],[""S.W. Smith"",""K.G. McAuliffe"",""J.F. Conley Jr.""],[""Poodt, Paul"",""Lankhorst, Adriaan"",""Roozeboom, Fred"",""Spee, Karel"",""Maas, Diederik"",""Vermeer, Ad""],[""Spagnola, Joseph C."",""Gong, Bo"",""Parsons, Gregory N.""],[""Szeghalmi, Adriana"",""Sklarek, Kornelia"",""Helgert, Michael"",""Brunner, Robert"",""Erfurth, Wilfried"",""G osele, Ulrich"",""Knez, Mato""]]","[2005,2004,1997,2008,2008,2010,1985,1989,1991,1994,1994,1994,1995,1996,1996,1997,1997,1997,1997,1997,1998,1999,1999,1999,2000,2000,2000,2000,2000,2000,2000,2001,2001,2001,2001,2001,2002,2002,2002,2002,2002,2002,2002,2002,2002,2002,2002,2003,2003,2003,2003,2003,2003,2003,2003,2003,2003,2003,2003,2004,2004,2004,2004,2004,2004,2004,2004,2004,2004,2004,2004,2004,2004,2004,2004,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2005,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2006,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2007,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2010,2010,2010,2010,2010,2010,2010,null,null,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010]","[""Appl. 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Phys. 28, 379 (1991).""]" +,,Al(mmp)3,H2O,466,[466],"[""""]","[""Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water""]","[[""W. Cho"",""K. Sung"",""K. S. An"",""S. S. Lee"",""T. M. Chung"",""Y. Kim""]]",[2003],"[""J. Vac. Sci. Technol., A""]","[""W. Cho, K. Sung, K. S. An, S. S. Lee, T. M. Chung, and Y. Kim, J. Vac. Sci. Technol. A 21, 1366 (2003).""]" +,,AlH3N:(C5H11),O2⚡,467,[467],"[""""]","[""Atomic Layer Deposition of Al _2 O _3 Thin Films from a 1-Methoxy-2-methyl-2-propoxide Complex of Aluminum and Water""]","[[""Y.-S. Min"",""Y. J. Cho"",""C. S. Hwang""]]",[2005],"[""Chem. Mater.""]","[""Y.-S. Min, Y. J. Cho, and C. S. Hwang, Chem. 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A.""],[""M. Ishii"",""S. Iwai"",""H. Kawata"",""T. Ueki"",""Y. Aoyagi""],[""M. Ishii"",""S. Iwai"",""T. Ueki"",""Y. Aoyagi""]]","[2007,1997,1997]","[""Appl. Phys. Lett."",""J. Cryst. Growth"",""Appl. Phys. Lett.""]","[""K. H. Kim, R. G. Gordon, A. Ritenour, and D. A. Antoniadis, Appl. Phys. Lett. 90, 212104 (2007)."",""M. Ishii, S. Iwai, H. Kawata, T. Ueki, and Y. Aoyagi, J. Cryst. Growth 180, 15 (1997)."",""M. Ishii, S. Iwai, T. Ueki, and Y. Aoyagi, Appl. Phys. Lett. 71, 1044 (1997).""]" +,,Me2EtN:AlH3,PH3,505,[505],"[""""]","[""Surface reaction mechanism and morphology control in AlP atomic layer epitaxy""]","[[""M. Ishii"",""S. Iwai"",""T. Ueki"",""Y. Aoyagi""]]",[1998],"[""Thin Solid Films""]","[""M. Ishii, S. Iwai, T. Ueki, and Y. Aoyagi, Thin Solid Films 318, 6 (1998).""]" +,AlAs,AlCl3,AsH3,506 and 507,"[506,507]","["""",""""]","[""Atomic layer epitaxy of AlP and (AlP) _n (GaP) _n superlattice using ethyldimethylamine alane as a new aluminum source"",""LOW-TEMPERATURE GROWTH OF GaAs AND AlAs BY DIRECT REACTION BETWEEN GaCl _3 , AlCl _3 AND AsH _3""]","[[""S. Hirose"",""M. Yamaura"",""H. Munekata""],[""R. Kobayashi""]]","[1999,1991]","[""Appl. Surf. Sci."",""J. Cryst. Growth""]","[""S. Hirose, M. Yamaura, and H. Munekata, Appl. Surf. Sci. 150, 89 (1999)."",""R. Kobayashi, J. Cryst. 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Mochizuki, N. Ohtsuka, and K. Kodama, Thin Solid Films 174, 63 (1989)."",""N. Ohtsuka, K. Kitahara, M. Ozeki, and K. Kodama, J. Cryst. Growth 99, 346 (1990).""]" +,,AliBu3,AsH3,524,[524],"[""""]","[""Lattice contraction and electrical conduction of heavily carbon doped AlAs layers grown by atomic layer epitaxy""]","[[""S. Hirose"",""H. Ibuka"",""A. Yoshida"",""N. Kano"",""K. Hara"",""H. Munekata"",""H. Kukimoto""]]",[2000],"[""J. Cryst. Growth""]","[""S. Hirose, H. Ibuka, A. Yoshida, N. Kano, K. Hara, H. Munekata, and H. Kukimoto, J. Cryst. Growth 208, 49 (2000).""]" +,,Me3N:AlH3,AsH3,525,[525],"[""""]","[""Real-time optical diagnostics for measuring and controlling epitaxial growth""]","[[""D. E. Aspnes"",""I. Kamiya"",""H. Tanaka"",""R. Bhat"",""L. T. Florez"",""J. P. Harbison"",""W. E. Quinn"",""M. Tamargo"",""S. Gregory"",""M. A. A. Pudensi"",""S. A. Schwarz"",""M. J. S. P. Brasil"",""R. E. Nahory""]]",[1993],"[""Thin Solid Films""]","[""D. E. Aspnes, I. Kamiya, H. Tanaka, R. Bhat, L. T. Florez, J. P. Harbison, W. E. Quinn, M. Tamargo, S. Gregory, M. A. A. Pudensi, S. A. Schwarz, M. J. S. P. Brasil, and R. E. Nahory, Thin Solid Films 225, 26 (1993).""]" +,,Me3N:AlH3,As(NMe2)3,526 and 527,"[526,527]","["""",""""]","[""Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy"",""Atomic layer epitaxy of AlAs using trimethylamine-alane and amino- As""]","[[""K. Kitahara"",""N. Ohtsuka"",""T. Ashino"",""M. Ozeki"",""K. Nakajima""],[""K. Fujii"",""I. Suemune"",""M. Yamanishi""]]","[1993,1993]","[""Jpn. J. Appl. Phys., Part 2"",""Appl. Phys. Lett.""]","[""K. Kitahara, N. Ohtsuka, T. Ashino, M. Ozeki, and K. Nakajima, Jpn. J. Appl. Phys., Part 2 32, L236 (1993)."",""K. Fujii, I. Suemune, and M. Yamanishi, Appl. Phys. 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Growth 172, 13 (1997)."",""S. Hirose, M. Yamaura, A. Yoshida, H. Ibuka, K. Hara, and H. Munekata, J. Cryst. Growth 194, 16 (1998).""]" +,AlSb,AlCl3,(Et3Si)3Sb,534,[534],"[""""]","[""Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates""]","[[""S. Hirose"",""A. Yoshida"",""M. Yamaura"",""N. Kano"",""H. Munekata""]]",[2000],"[""J. Mater. Sci.: Mater. Electron.""]","[""S. Hirose, A. Yoshida, M. Yamaura, N. Kano, and H. Munekata, J. Mater. Sci.: Mater. Electron. 11, 7 (2000).""]" +,AlxSiyOz,AlCl3,Si(OEt)4,535,[535],"[""""]","[""Atomic Layer Deposition of Antimony and its Compounds Using Dechlorosilylation Reactions of Tris(triethylsilyl)antimony""]","[[""Viljami Pore"",""Kjell Knapas"",""Timo Hatanp a a"",""Tiina Sarnet"",""Marianna Kemell"",""Mikko Ritala"",""Markku Leskel a"",""Kenichiro Mizohata""]]",[2011],"[""Chem. Mater.""]","[""V. Pore, K. Knapas, T. Hatanp€a€a, T. Sarnet, M. Kemell, M. Ritala, M. Leskel€a, and K. Mizohata, Chem. Mater. 23, 247 (2011).""]" +,Al2O3/ SiO2 f,AlMe3,(tBuO)3\-SiOH,"43, 536, and 537","[43,536,537]","["""","""",""""]","[""Rapid vapor deposition of highly conformal silica nanolaminates"",""Synthesis and study of aluminosilicate compounds on the silica surface"",""Chemical corrosion protection of optical components using atomic layer deposition""]","[[""D. Hausmann"",""J. Becker"",""S. L. Wang"",""R. G. Gordon""],[""V. V. Brei"",""V. A. Kasperskii"",""A. A. Chuiko""],[""Du, Xiaohua"",""Zhang, Kevin"",""Holland, Kathy"",""Tombler, Thomas"",""Moskovits, Martin""]]","[2002,1996,2009]","[""Science"",""Zh. Prikl. Khim."",""Appl. Opt.""]","[""D. Hausmann, J. Becker, S. L. Wang, and R. G. Gordon, Science 298, 402 (2002)."",""V. V. Brei, V. A. Kasperskii, and A. A. Chuiko, Zh. Prikl. Khim. 69, 378 (1996) [Russ. J. Appl. Chem. 69, 335 (1996)]."",""X. Du, K. Zhang, K. Holland, T. Tombler, and M. Moskovits, Appl. Opt. 48, 6470 (2009).""]" +,AlxTiyOz,AlCl3,Ti(OEt)4,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,,AlCl3,Ti(OiPr)4,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,,AlMe3,Ti(OiPr)4,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,AlxCryOz,AlMe3,CrO2Cl2,538,[538],"[""10.1016/j.micromeso.2009.05.024""]","[""Structural and chemical modification of porous alumina membranes""]","[[""Velleman, Leonora"",""Triani, Gerry"",""Evans, Peter J."",""Shapter, Joe G."",""Losic, Dusan""]]",[2009],"[""Microporous Mesoporous Mater.""]","[""L. Velleman, G. Triani, P. J. Evans, J. G. Shapter, and D. Losic, Microporous Mesoporous Mater. 126, 87 (2009).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_008_table_003/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_008_table_003/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..4d23b760d4db28f6934f8937ca8b6fc543781ef7 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_008_table_003/gold.csv @@ -0,0 +1,60 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,AlxZryOz,Al(OEt)3,ZrCl4,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,AlxHfyOz,Al(OEt)3,HfCl4,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,AlLaO3,[LaAl(OiPr)6\-(iPrOH)]2,H2O,539,[539],"[""""]","[""Synthesis of oxide superalloys by ML--ALE method""]","[[""V. E. Drozd"",""A. A. Tulub"",""V. B. Aleskovskii"",""D. V. Korol'kov""]]",[1994],"[""Appl. Surf. Sci.""]","[""V. E. Drozd, A. A. Tulub, V. B. Aleskovskii, and D. V. Korol’kov, Appl. Surf. Sci. 82/83, 587 (1994).""]" +,AlPrxOy,[AlPr(OiPr)6\-(PriOH)]2,H2O,540,[540],"[""""]","[""Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor""]","[[""Gaskell, J. M."",""Jones, A. C."",""Aspinall, H. C."",""Przybylak, S."",""Chalker, P. R."",""Black, K."",""Davies, H. O."",""Taechakumput, P."",""Taylor, S."",""Critchlow, G. W.""]]",[2006],"[""J. Mater. Chem.""]","[""J. M. Gaskell, A. C. Jones, H. C. Aspinall, S. Przybylak, P. R. Chalker, K. Black, H. O. Davies, P. Taechakumput, S. Taylor, and G. W. Critchlow, J. Mater. Chem. 16, 3854 (2006).""]" +,AlNdxOy,[AlNd(OiPr)6\-(PriOH)]2,H2O,540,[540],"[""""]","[""Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor""]","[[""Gaskell, J. M."",""Jones, A. C."",""Aspinall, H. C."",""Przybylak, S."",""Chalker, P. R."",""Black, K."",""Davies, H. O."",""Taechakumput, P."",""Taylor, S."",""Critchlow, G. W.""]]",[2006],"[""J. Mater. Chem.""]","[""J. M. Gaskell, A. C. Jones, H. C. Aspinall, S. Przybylak, P. R. Chalker, K. Black, H. O. Davies, P. Taechakumput, S. Taylor, and G. W. Critchlow, J. Mater. 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Yokoyama""],[""A. Nakajima"",""T. Yoshimoto"",""T. Kidera"",""S. Yokoyama""],[""W. J. Lee"",""J. H. Lee"",""C. O. Park"",""Y. S. Lee"",""S. J. Shin"",""S. K. Rha""]]","[1995,1998,1999,2001,2004]","[""J. Non-Cryst. Solids"",""Surf. Sci."",""J. Korean Phys. Soc."",""Appl. Phys. Lett."",""J. Korean Phys. Soc.""]","[""S. Morishita, W. Gasser, K. Usami, and M. Matsumura, J. Non-Cryst. Solids 187, 66 (1995)."",""J. W. Klaus, A. W. Ott, A. C. Dillon, and S. M. George, Surf. Sci. 418, L14 (1998)."",""M. Yokoyama, J. Korean Phys. Soc. 35, S71 (1999)."",""A. Nakajima, T. Yoshimoto, T. Kidera, and S. Yokoyama, Appl. Phys. Lett. 79, 665 (2001)."",""W. J. Lee, J. H. Lee, C. O. Park, Y. S. Lee, S. J. Shin, and S. K. Rha, J. Korean Phys. Soc. 45, 1352 (2004).""]" +,,SiCl2H2,NH3,632 and 634,"[632,634]","["""",""""]","[""Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition"",""Atomic layer deposition of HfO2 and Si nitride on Ge substrates""]","[[""A. Nakajima"",""T. Yoshimoto"",""T. Kidera"",""S. Yokoyama""],[""Zhu, S."",""Nakajima, A.""]]","[2001,2007]","[""Appl. Phys. Lett."",""Jpn. J. Appl. Phys.""]","[""A. Nakajima, T. Yoshimoto, T. Kidera, and S. Yokoyama, Appl. Phys. Lett. 79, 665 (2001)."",""S. Zhu and A. Nakajima, Jpn. J. Appl. Phys., Part 1 46, 7699 (2007).""]" +,,SiCl2H2,NH3⚡,635,[635],"[""""]","[""Characteristics of silicon nitride thin films prepared by using alternating exposures of SiH2Cl2 and NH3""]","[[""Lee, W. J."",""Kim, U. J."",""Han, C. H."",""Chun, M. H."",""Rha, S. K.""]]",[2005],"[""J. Korean Phys. Soc.""]","[""W. J. Lee, U. J. Kim, C. H. Han, M. H. Chun, and S. K. Rha, J. Korean Phys. Soc. 47, S598 (2005).""]" +,,SiCl2H2,NH3 + cat.,636 and 637,"[636,637]","["""",""""]","[""Atomic layer controlled deposition of silicon nitride with self-limiting mechanism"",""Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy""]","[[""H. Goto"",""K. Shibahara"",""S. Yokoyama""],[""S. Yokoyama"",""H. Goto"",""T. Miyamoto"",""N. Ikeda"",""J. Shibahara""]]","[1996,1997]","[""Appl. Phys. Lett."",""Appl. Surf. Sci.""]","[""H. Goto, K. Shibahara, and S. Yokoyama, Appl. Phys. Lett. 68, 3257 (1996)."",""S. Yokoyama, H. Goto, T. Miyamoto, N. Ikeda, and J. Shibahara, Appl. Surf. Sci. 112, 75 (1997).""]" +,,Si2Cl6,N2H4,638,[638],"[""""]","[""Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces""]","[[""S. Yokoyama"",""N. Ikeda"",""K. Kajikawa"",""Y. Nakashima""]]",[1998],"[""Appl. Surf. Sci.""]","[""S. Yokoyama, N. Ikeda, K. Kajikawa, and Y. Nakashima, Appl. Surf. Sci. 130–132, 352 (1998).""]" +,,Si2Cl6,NH3,639,[639],"[""""]","[""Atomic-layer chemical-vapor-deposition of silicon nitride""]","[[""S. Morishita"",""S. Sugahara"",""M. Matsumura""]]",[1997],"[""Appl. Surf. Sci.""]","[""S. Morishita, S. Sugahara, and M. Matsumura, Appl. Surf. Sci. 112, 198 (1997).""]" +,SiC,SiCl2H2,C2H4,640 and 641,"[640,641]","[""10.1016/j.tsf.2009.01.118"",""""]","[""Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3"",""Atomic level epitaxy of 3C--SiC by low pressure vapour deposition with alternating gas supply""]","[[""Park, Kwangchol"",""Yun, Won-Deok"",""Choi, Byoung-Jun"",""Kim, Heon-Do"",""Lee, Won-Jun"",""Rha, Sa-Kyun"",""Park, Chong Ook""],[""H. Nagasawa"",""Y. Yamaguchi""]]","[2009,1993]","[""Thin Solid Films"",""Thin Solid Films""]","[""K. Park, W.-D. Yun, B.-J. Choi, H.-D. Kim, W.-J. Lee, S.-K. Rha, and C. O. Park, Thin Solid Films 517, 3975 (2009)."",""H. Nagasawa and Y. Yamaguchi, Thin Solid Films 225, 230 (1993).""]" +,,SiEt2H2,– i,642,[642],"[""""]","[""Mechanisms of SiC growth by alternate supply of SiH _2 Cl _2 and C _2 H _2""]","[[""H. Nagasawa"",""Y. Yamaguchi""]]",[1994],"[""Appl. Surf. Sci.""]","[""H. Nagasawa and Y. Yamaguchi, Appl. Surf. Sci. 82/83, 405 (1994).""]" +,,Si2H6,C2H4,643,[643],"[""""]","[""Sub-atomic layer growth of SiC at low temperatures""]","[[""E. Sadayuki"",""S. Imai"",""M. Matsumura""]]",[1996],"[""Jpn. J. Appl. Phys., Part 1""]","[""E. Sadayuki, S. Imai, and M. Matsumura, Jpn. J. Appl. Phys., Part 1 34, 6166 (1996).""]" +,,Si2H6,C2H2,644–647,"[644,645,646,647]","["""","""","""",""""]","[""Layer-by-layer growth of SiC at low temperatures"",""Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure"",""SELF-LIMITING GROWTH ON THE eta - SiC (001) SURFACE"",""Atomic layer epitaxy controlled by surface superstructures in SiC""]","[[""J. Sumakeris"",""L. B. Rowland"",""R. S. Kern"",""S. Tanaka"",""R. F. Davis""],[""T. Fuyuki"",""M. Nakayama"",""T. Yoshinobu"",""H. Shiomi"",""H. Matsunami""],[""S. Hara"",""Y. Aoyagi"",""M. Kawai"",""S. Misakawa"",""E. Sakuma"",""S. Yoshida""],[""T. Fuyuki"",""T. Yoshinobu"",""H. Matsunami""]]","[1993,1989,1992,1993]","[""Thin Solid Films"",""J. Cryst. Growth"",""Surf. Sci."",""Thin Solid Films""]","[""J. Sumakeris, L. B. Rowland, R. S. Kern, S. Tanaka, and R. F. Davis, Thin Solid Films 225, 219 (1993)."",""T. Fuyuki, M. Nakayama, T. Yoshinobu, H. Shiomi, and H. Matsunami, J. Cryst. Growth 95, 461 (1989)."",""S. Hara, Y. Aoyagi, M. Kawai, S. Misakawa, E. Sakuma, and S. Yoshida, Surf. Sci. 273, 437 (1992)."",""T. Fuyuki, T. Yoshinobu, and H. Matsunami, Thin Solid Films 125, 225 (1993).""]" +,SixAlyOz,Si(OEt)4,AlCl3,535,[535],"[""""]","[""Atomic Layer Deposition of Antimony and its Compounds Using Dechlorosilylation Reactions of Tris(triethylsilyl)antimony""]","[[""Viljami Pore"",""Kjell Knapas"",""Timo Hatanp a a"",""Tiina Sarnet"",""Marianna Kemell"",""Mikko Ritala"",""Markku Leskel a"",""Kenichiro Mizohata""]]",[2011],"[""Chem. Mater.""]","[""V. Pore, K. Knapas, T. Hatanp€a€a, T. Sarnet, M. Kemell, M. Ritala, M. Leskel€a, and K. Mizohata, Chem. Mater. 23, 247 (2011).""]" +,SiO2/ Al2O3 f,(tBuO)3SiOH,AlMe3,"43, 536, and 537","[43,536,537]","["""","""",""""]","[""Rapid vapor deposition of highly conformal silica nanolaminates"",""Synthesis and study of aluminosilicate compounds on the silica surface"",""Chemical corrosion protection of optical components using atomic layer deposition""]","[[""D. Hausmann"",""J. Becker"",""S. L. Wang"",""R. G. Gordon""],[""V. V. Brei"",""V. A. Kasperskii"",""A. A. Chuiko""],[""Du, Xiaohua"",""Zhang, Kevin"",""Holland, Kathy"",""Tombler, Thomas"",""Moskovits, Martin""]]","[2002,1996,2009]","[""Science"",""Zh. Prikl. Khim."",""Appl. Opt.""]","[""D. Hausmann, J. Becker, S. L. Wang, and R. G. Gordon, Science 298, 402 (2002)."",""V. V. Brei, V. A. Kasperskii, and A. A. Chuiko, Zh. Prikl. Khim. 69, 378 (1996) [Russ. J. Appl. Chem. 69, 335 (1996)]."",""X. Du, K. Zhang, K. Holland, T. Tombler, and M. Moskovits, Appl. Opt. 48, 6470 (2009).""]" +,SixTiyOz,Si(OEt)4,TiCl4,51,[51],"[""""]","[""Synthesis and study of boron phosphate and titanium silicate compounds on silica surface""]","[[""V. V. Brei"",""V. A. Kasperskii"",""N. E. Gulyanitskaya""]]",[1993],"[""React. Kinet. Catal. Lett.""]","[""V. V. Brei, V. A. Kasperskii, and N. E. Gulyanitskaya, React. Kinet. Catal. Lett. 50, 415 (1993).""]" +,,Si(OnBu)4,Ti(NEt2)4,648 and 649,"[648,649]","["""",""""]","[""Microscopic mechanisms of accurate layer-by-layer growth of eta - SiC"",""Electrical characterization of Ti-silicate films grown by atomic layer chemical vapor deposition""]","[[""S. Hara"",""T. Meguro"",""Y. Aoyagi"",""M. Kawai""],[""Lee, S."",""Yong, K.""]]","[1993,2007]","[""Thin Solid Films"",""Jpn. J. Appl. Phys.""]","[""S. Hara, T. Meguro, Y. Aoyagi, and M. Kawai, Thin Solid Films 225, 240 (1993)."",""S. Lee and K. Yong, Jpn. J. Appl. Phys., Part 1 46, 5259 (2007).""]" +,SixZryOz,SiCl4,Zr(OtBu)4,650,[650],"[""""]","[""Growth and characterization of titanium silicate nanofilms for gate oxide applications""]","[[""Lee, S."",""Kim, J."",""Yong, K.""]]",[2008],"[""J. Nanosci. Nanotechnol.""]","[""S. Lee, J. Kim, and K. Yong, J. Nanosci. Nanotechnol. 8, 577 (2008).""]" +,,Si(OEt)4,ZrCl4,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,,Si(OnBu)4,ZrCl4,103 and 651,"[103,651]","["""",""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Atomic layer deposition of zirconium silicate films using zirconium tetra- tert -butoxide and silicon tetrachloride""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""W. K. Kim"",""S. W. Kang"",""S. W. Rhee""]]","[2000,2003]","[""Science"",""J. Vac. Sci. Technol., A""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000)."",""W. K. Kim, S. W. Kang, and S. W. Rhee, J. Vac. Sci. Technol. A 21, L16 (2003).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_009_table_004/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_009_table_004/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..375c10e19415da6f16bde8251eb4073767947628 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_009_table_004/gold.csv @@ -0,0 +1,51 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,Si(OnBu)4,Zr(NEt2)4,652,[652],"[""""]","[""Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate""]","[[""W. K. Kim"",""S. W. Kang"",""S. W. Rhee"",""N. I. Lee"",""J. H. Lee"",""H. K. Kang""]]",[2002],"[""J. Vac. Sci. Technol., A""]","[""W. K. Kim, S. W. Kang, S. W. Rhee, N. I. Lee, J. H. Lee, and H. K. Kang, J. Vac. Sci. Technol. A 20, 2096 (2002).""]" +,SixHfyOz,Si(OEt)4,HfCl4,653,[653],"[""""]","[""Characterization of Zirconium Silicate Gate Dielectrics Deposited on Si (100) Using Zr(NEt _2 ) _4 and Si(O ^n Bu) _4""]","[[""J. Kim"",""K. Yong""]]",[2004],"[""Electrochem. Solid-State Lett.""]","[""J. Kim and K. Yong, Electrochem. Solid-State Lett. 7, F35 (2004).""]" +,,Si(OEt)4,HfI4,653,[653],"[""""]","[""Characterization of Zirconium Silicate Gate Dielectrics Deposited on Si (100) Using Zr(NEt _2 ) _4 and Si(O ^n Bu) _4""]","[[""J. Kim"",""K. Yong""]]",[2004],"[""Electrochem. Solid-State Lett.""]","[""J. Kim and K. Yong, Electrochem. Solid-State Lett. 7, F35 (2004).""]" +,,(tBuO)3SiOH,Hf(NMe2)4,654,[654],"[""""]","[""Properties of Oxide Film Atomic Layer Deposited from Tetraethoxy Silane, Hafnium Halides, and Water""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""R. I. Hegde"",""D. C. Gilmer"",""P. J. Tobin""]]",[2004],"[""J. Electrochem. Soc.""]","[""K. Kukli, M. Ritala, M. Leskel€a, T. Sajavaara, J. Keinonen, R. I. Hegde, D. C. Gilmer, and P. J. Tobin, J. Electrochem. Soc. 151, F98 (2004).""]" +,,Si(OnBu)4,Hf(NEt2)4,655–659,"[655,656,657,658,659]","["""","""","""","""",""""]","[""Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics"",""Interfacial properties of Hf-silicate/Si and Hf-silicate/Al2O3/Si deposited by atomic layer chemical vapor deposition"",""Atomic layer chemical vapor deposition and electrical characterization of hafnium silicate films"",""Growth and characterization of Hf-silicate/Al2O3 gate stacks grown on Si(100) by self-limiting atomic layer deposition"",""Photoelectron spectroscopic analysis of Hf-silicate/SiO2/Si stacks deposited by atomic layer chemical vapor deposition""]","[[""R. G. Gordon"",""J. Becker"",""D. Hausmann"",""S. Suh""],[""Kim, J."",""Yong, K.""],[""Kim, J."",""Yong, K.""],[""Kim, J."",""Lee, S."",""Yong, K.""],[""Kim, J."",""Yong, K. J.""]]","[2001,2005,2005,2006,2006]","[""Chem. Mater."",""J. Electrochem. Soc."",""J. Electrochem. Soc."",""Jpn. J. Appl. Phys."",""J. Vac. Sci. Technol., B""]","[""R. G. Gordon, J. Becker, D. Hausmann, and S. Suh, Chem. Mater. 13, 2463 (2001)."",""J. Kim and K. Yong, J. Electrochem. Soc. 152, F153 (2005)."",""J. Kim and K. Yong, J. Electrochem. Soc. 152, F45 (2005)."",""J. Kim, S. Lee, and K. Yong, Jpn. J. Appl. Phys., Part 1 45, 7080 (2006)."",""J. Kim and K. J. Yong, J. Vac. Sci. Technol. B 24, 1147 (2006).""]" +,,Si(OtPe)3OH,Hf(NEt2)4,660,[660],"[""""]","[""Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor deposition""]","[[""Kim, J."",""Yong, K.""]]",[2006],"[""J. Appl. Phys.""]","[""J. Kim and K. Yong, J. Appl. Phys. 100, 044106 (2006).""]" +,,Si(OnBu)4,Hf(NEtMe)4,661,[661],"[""10.1149/1.3137053""]","[""Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol""]","[[""Liu, Jian"",""Lennard, William N."",""Goncharova, Lyudmila V."",""Landheer, Dolf"",""Wu, Xiaohua"",""Rushworth, Simon A."",""Jones, Anthony C.""]]",[2009],"[""J. Electrochem. Soc.""]","[""J. Liu, W. N. Lennard, L. V. Goncharova, D. Landheer, X. Wu, S. A. Rushworth, and A. C. Jones, J. Electrochem. Soc. 156, G89 (2009).""]" +,SixBiyOz,Bi(CH2SiMe3)3,O3,662 and 663,"[662,663]","[""10.1039/b908216f"",""""]","[""Atomic layer deposition of hafnium silicate film for high mobility pentacene thin film transistor applications"",""New approach to the ALD of bismuth silicates: Bi(CH2SiMe3)(3) acting as a precursor for both bismuth and silicon""]","[[""Lee, Seunghyup"",""Yun, Dong-Jin"",""Rhee, Shi-Woo"",""Yong, Kijung""],[""Harjuoja, J."",""Hatanp a a, T."",""Vehkam aki, M."",""V ayrynen, S."",""Putkonen, M."",""Niinist o, L."",""Ritala, M."",""Leskel a, M."",""Rauhala, E.""]]","[2009,2005]","[""J. Mater. Chem."",""Chem. Vap. Deposition""]","[""S. Lee, D.-J. Yun, S.-W. Rhee, and K. Yong, J. Mater. Chem. 19, 6857 (2009)."",""J. Harjuoja, T. Hatanp€a€a, M. Vehkam€aki, S. V€ayrynen, M. Putkonen, L. Niinist€o, M. Ritala, M. Leskel€a, and E. Rauhala, Chem. Vap. Deposition 11, 362 (2005).""]" +15,Phosphorus,,,,[],[],[],[],[],[],[] +,POx,PCl3,H2O,664–668,"[664,665,666,667,668]","["""","""","""","""",""""]","[""Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition"",""Preparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel"",""Effect of surface coverage of silica gel with phosphorus on subsequent chemisorption of titanium tetrachloride"",""Change in the structure of silica gel in the process of the formation of a layer of phosphorus pentoxide on its surface"",""Ineraction of chromium-containing silica gel with phosphorus trichloride""]","[[""Harjuoja, J."",""V ayrynen, S."",""Putkonen, M."",""Niinist o, L."",""Rauhala, E.""],[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""V. B. Aleskovskii"",""A. N. Volkova"",""V. M. Smirnov""],[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]","[2006,1969,1972,1974,1975]","[""J. Cryst. Growth"",""Zh. Prikl. Khim."",""Zh. Fiz. Kihm."",""Zh. Prikl. Khim."",""Zh. Obshch. Khim.""]","[""J. Harjuoja, S. V€ayrynen, M. Putkonen, L. Niinist€o, and E. Rauhala, J. Cryst. Growth 286, 376 (2006)."",""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. 42, 1028 (1969) [J. Appl. Chem. USSR 42, 980 (1969)]."",""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Fiz. Kihm. 46, 1292 (1972) [Russ. J. Phys. Chem. 46, 742 (1972)]."",""S. I. Kol’tsov, V. B. Aleskovskii, A. N. Volkova, and V. M. Smirnov, Zh. Prikl. Khim. 47, 1254 (1974) [J. Appl. Chem. USSR 47, 1292 (1974)]."",""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 45, 3 (1975) [J. Gen. Chem. USSR 45, 1 (1975)].""]" +,,POCl3,H2O,"581, 669, and 670","[581,669,670]","["""","""",""""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium"",""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors"",""Reaction of phosphoryl chloride with hydrated silica""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""],[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]","[1974,2002,1973]","[""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Zh. Obshch. Khim.""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. 47, 2332 (1974) [J. Appl. Chem. USSR 47, 2390 (1974)]."",""S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. 75, 986 (2002) [Russ. J. Appl. Chem. 75, 969 (2002)]."",""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 43, 724 (1973) [J. Gen. Chem. USSR 43, 723 (1973)].""]" +,PxByOz,POCl3,B(OMe)3,51 and 52,"[51,52]","["""",""""]","[""Synthesis and study of boron phosphate and titanium silicate compounds on silica surface"",""Investigation of molecular deposition reactions in the formation of boron phosphate on the surface of dispersed silica""]","[[""V. V. Brei"",""V. A. Kasperskii"",""N. E. Gulyanitskaya""],[""V. M. Gun'ko""]]","[1993,1993]","[""React. Kinet. Catal. Lett."",""Kinet. Katal.""]","[""V. V. Brei, V. A. Kasperskii, and N. E. Gulyanitskaya, React. Kinet. Catal. Lett. 50, 415 (1993)."",""V. M. Gun’ko, Kinet. Katal. 34, 463 (1993); 34, 406 (1993).""]" +20,Calcium,,,,[],[],[],[],[],[],[] +,CaO (CaCO3),Ca(thd)2,H2O,671,[671],"[""""]","[""Chemical compositionnof silica containing chromium and phosphorus synthesized by the molecular-stratification method""]","[[""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]",[1980],"[""Zh. Obshch. Khim.""]","[""A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 50, 2633 (1980) [J. Gen. Chem. USSR 50, 2121 (1980)].""]" +,,Ca(thd)2,O3,672 and 673,"[672,673]","["""",""""]","[""Precursor properties of calcium eta -diketonate in vapor phase atomic layer epitaxy"",""Growth of calcium carbonate by the atomic layer chemical vapour deposition technique""]","[[""J. Aarik"",""A. Aidla"",""A. Jaek"",""M. Leskel a"",""L. Niinist o""],[""O. Nilsen"",""H. Fjellv g"",""A. Kjekshus""]]","[1994,2004]","[""Appl. Surf. Sci."",""Thin Solid Films""]","[""J. Aarik, A. Aidla, A. Jaek, M. Leskel€a, and L. Niinist€o, Appl. Surf. Sci. 75, 33 (1994)."",""O. Nilsen, H. Fjellva˚g, and A. Kjekshus, Thin Solid Films 450, 240 (2004).""]" +,,Ca(iPr3Cp)2,H2O,674,[674],"[""10.1016/j.tsf.2009.03.013""]","[""Atomic layer deposition and characterization of biocompatible hydroxyapatite thin films""]","[[""Putkonen, Matti"",""Sajavaara, Timo"",""Rahkila, Paavo"",""Xu, Leiting"",""Cheng, Sulin"",""Niinist o, Lauri"",""Whitlow, Harry J.""]]",[2009],"[""Thin Solid Films""]","[""M. Putkonen, T. Sajavaara, P. Rahkila, L. Xu, S. Cheng, L. Niinist€o, and H. J. Whitlow, Thin Solid Films 517, 5819 (2009).""]" +,CaS,Ca(thd)2,H2S,671 and 675–679,"[671,675,676,677,678,679]","["""","""","""","""","""",""""]","[""Chemical compositionnof silica containing chromium and phosphorus synthesized by the molecular-stratification method"",""Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor"",""ALKALINE-EARTH SULFIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY"",""The effect of growth parameters on the deposition of CaS thin films by atomic layer epitaxy"",""THE EFFECT OF GASEOUS SiCl _4 ON THE ALE GROWTH OF CaS , SrS AND SrS -- Ce"",""[Ca(thd) _2 (tetraen)] : A Monomeric Precursor for Deposition of CaS Thin Films""]","[[""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""Kukli, K."",""Ritala, M."",""Sajavaara, T."",""H anninen, T."",""Leskel a, M.""],[""M. Tammenmaa"",""H. Antson"",""M. Asplund"",""L. Hiltunen"",""M. Leskel a"",""L. Niinist o"",""E. Ristolainen""],[""J. Rautanen"",""M. Leskel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen"",""M. Utriainen""],[""P. Soininen"",""L. Niinist o"",""E. Nyk anen"",""M. Leskel a""],[""T. H anninen"",""I. Mutikainen"",""V. Saanila"",""M. Ritala"",""M. Leskel a"",""J. C. Hanson""]]","[1980,2006,1987,1994,1994,1997]","[""Zh. Obshch. Khim."",""Thin Solid Films"",""J. Cryst. Growth"",""Appl. Surf. Sci."",""Appl. Surf. Sci."",""Chem. Mater.""]","[""A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 50, 2633 (1980) [J. Gen. Chem. USSR 50, 2121 (1980)]."",""K. Kukli, M. Ritala, T. Sajavaara, T. H€anninen, and M. Leskel€a, Thin Solid Films 500, 322 (2006)."",""M. Tammenmaa, H. Antson, M. Asplund, L. Hiltunen, M. Leskel€a, L. Niinist€o, and E. Ristolainen, J. Cryst. Growth 84, 151 (1987)."",""J. Rautanen, M. Leskel€a, L. Niinist€o, E. Nyk€anen, P. Soininen, and M. Utriainen, Appl. Surf. Sci. 82/83, 553 (1994)."",""P. Soininen, L. Niinist€o, E. Nyk€anen, and M. Leskel€a, Appl. Surf. Sci. 75, 99 (1994)."",""T. H€anninen, I. Mutikainen, V. Saanila, M. Ritala, M. Leskel€a, and J. C. Hanson, Chem. Mater. 9, 1234 (1997).""]" +,CaF2,Ca(thd)2,HF,680,[680],"[""""]","[""AFM studies of polycrystalline calcium sulfide thin films grown by atomic layer deposition""]","[[""S. Dey"",""S. J. Yun""]]",[1999],"[""Appl. Surf. Sci.""]","[""S. Dey and S. J. Yun, Appl. Surf. Sci. 143, 191 (1999).""]" +,,Ca(thd)2,TiF4,67 and 681,"[67,681]","["""",""""]","[""Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films"",""Metal fluoride thin films prepared by atomic layer deposition""]","[[""Tero Pilvi"",""Mikko Ritala"",""Markku Leskela"",""Martin Bischoff"",""Ute Kaiser"",""Norbert Kaiser""],[""M. Ylilammi"",""T. Ranta-aho""]]","[2008,1994]","[""Appl. Opt."",""J. Electrochem. Soc.""]","[""T. Pilvi, M. Ritala, M. Leskel€a, M. Bischoff, U. Kaiser, and N. Kaiser, Appl. Opt. 47, C271 (2008)."",""M. Ylilammi and T. Ranta-aho, J. Electrochem. Soc. 141, 1278 (1994).""]" +21,Scandium,,,,[],[],[],[],[],[],[] +,Sc2O3,ScCp3,H2O,682,[682],"[""""]","[""Novel ALD process for depositing CaF2 thin films""]","[[""Pilvi, T."",""Arstila, K."",""Leskel a, M."",""Ritala, M.""]]",[2007],"[""Chem. Mater.""]","[""T. Pilvi, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Mater. 19, 3387 (2007).""]" +,,Sc(thd)3,O3,682,[682],"[""""]","[""Novel ALD process for depositing CaF2 thin films""]","[[""Pilvi, T."",""Arstila, K."",""Leskel a, M."",""Ritala, M.""]]",[2007],"[""Chem. Mater.""]","[""T. Pilvi, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Mater. 19, 3387 (2007).""]" +,,Sc(thd)3,O3 + H2O2,682,[682],"[""""]","[""Novel ALD process for depositing CaF2 thin films""]","[[""Pilvi, T."",""Arstila, K."",""Leskel a, M."",""Ritala, M.""]]",[2007],"[""Chem. Mater.""]","[""T. Pilvi, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Mater. 19, 3387 (2007).""]" +,,Sc(iPrAMD)3,H2O,683,[683],"[""""]","[""Surface-controlled deposition of Sc _2 O _3 thin films by atomic layer epitaxy using eta -diketonate and organometallic precursors""]","[[""M. Putkonen"",""M. Nieminen"",""J. Niinist o"",""L. Niinist o""]]",[2001],"[""Chem. Mater.""]","[""M. Putkonen, M. Nieminen, J. Niinist€o, and L. Niinist€o, Chem. Mater. 13, 4701 (2001).""]" +,,Sc(emd)3,O2,684,[684],"[""""]","[""ALD of scandium oxide from scandium Tris(N,N-'-diisopropylacetamidinate) and water""]","[[""de Rouffignac, P."",""Yousef, A. P."",""Kim, K. H."",""Gordon, R. G.""]]",[2006],"[""Electrochem. Solid-State Lett.""]","[""P. de Rouffignac, A. P. Yousef, K. H. Kim, and R. G. Gordon, Electrochem. Solid-State Lett. 9, F45 (2006).""]" +22,Titanium,,,,[],[],[],[],[],[],[] +,Ti,TiCl4,H2⚡,685 and 686,"[685,686]","[""10.1016/j.apsusc.2009.04.184"",""""]","[""Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy"",""Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers""]","[[""Hardy, A."",""Adelmann, C."",""Van Elshocht, S."",""Van den Rul, H."",""Van Bael, M. K."",""De Gendt, S."",""D'Olieslaeger, M."",""Heyns, M."",""Kittl, J. A."",""Mullens, J.""],[""S. M. Rossnagel"",""A. Sherman"",""F. Turner""]]","[2009,2000]","[""Appl. Surf. Sci."",""J. Vac. Sci. Technol., B""]","[""A. Hardy, C. Adelmann, S. Van Elshocht, H. Van den Rul, M. K. Van Bael, S. De Gendt, M. D’Olieslaeger, M. Heyns, J. A. Kittl, and J. Mullens, Appl. Surf. Sci. 255, 7812 (2009)."",""S. M. Rossnagel, A. Sherman, and F. Turner, J. Vac. Sci. Technol. B 18, 2016 (2000).""]" +,TiO2,TiF4,H2O,687,[687],"[""""]","[""Growth kinetics and initial stage of growth during plasma-enhanced Ti atomic layer deposition""]","[[""H. Kim"",""S. M. Rossnagel""]]",[2002],"[""J. Vac. Sci. Technol., A""]","[""H. Kim and S. M. Rossnagel, J. Vac. Sci. Technol. A 20, 802 (2002).""]" +,,TiCl4,H2O,"44, 92, 94, 123, 128, 153, 176, 179, 198, 207, 218, 228, 238, 305, 365, 378, 379, 390, 581, 585, 664, 665, and 688–814","[44,92,94,123,128,153,176,179,198,207,218,228,238,305,365,378,379,390,581,585,664,665,688,689,690,691,692,693,694,695,696,697,698,699,700,701,702,703,704,705,706,707,708,709,710,711,712,713,714,715,716,717,718,719,720,721,722,723,724,725,726,727,728,729,730,731,732,733,734,735,736,737,738,739,740,741,742,743,744,745,746,747,748,749,750,751,752,753,754,755,756,757,758,759,760,761,762,763,764,765,766,767,768,769,770,771,772,773,774,775,776,777,778,779,780,781,782,783,784,785,786,787,788,789,790,791,792,793,794,795,796,797,798,799,800,801,802,803,804,805,806,807,808,809,810,811,812,813,814]","[""10.1039/b923490j"","""","""","""","""","""","""","""","""","""","""","""","""",""10.1063/1.3216582"",""10.1016/j.apsusc.2010.03.047"",""10.1088/0957-4484/21/5/055304"",""10.1021/la103337a"",""DOI: 10.1016/j.apsusc.2010.07.051"","""","""","""","""",""10.1039/b809953g"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1021/jp8070794"",""10.1088/0957-4484/19/44/445604"",""DOI: 10.1016/j.tsf.2008.04.052"","""",""10.1557/JMR.2008.0297"",""10.1134/S107042720812001X"",""10.1016/j.tsf.2009.05.001"",""10.1021/jp902200c"",""10.1007/s11837-009-0081-z"",""10.1021/cm900636s"",""10.1021/jp809183y"",""10.1149/1.3138723"",""10.1116/1.3072920"",""10.1016/j.seppur.2008.11.004"",""10.1088/0957-4484/20/3/035602"",""10.1116/1.3021030"",""10.1134/S1063783409030093"",""10.1063/1.3454908"",""10.1021/jp1013303"",""10.1088/0957-4484/21/3/035301"",""10.1109/LPT.2010.2043352"",""10.1016/j.tsf.2009.09.010"",""10.1021/jp911210q"",""10.1016/j.apcatb.2010.01.014"",""10.1088/0957-4484/21/22/225602"",""10.1149/1.3313344"",""10.1134/S1070427210090016"",""10.1021/jp1053748"","""",""10.1021/am900726k"",""""]","[""Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition"",""Electron probe microanalysis of HfO2 thin films on conductive and insulating substrates"",""Surface modification of thermoplastics by atomic layer deposition of Al2O3 and TiO2 thin films"",""Atomic layer deposited thin films for corrosion protection"",""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Growth per cycle in atomic layer deposition: real application examples of a theoretical model"",""TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition"",""Effect of atomic layer deposition coatings on the surface structure of anodic aluminum oxide membranes"",""GaPO4 sensors for gravimetric monitoring during atomic layer deposition at high temperatures"",""Atomic layer deposition of TiO2 and Al2O3 thin films and nanolaminates"",""Sacrificial-layer atomic layer deposition for fabrication of non-close-packed inverse-opal photonic crystals"",""Implementing ALD Layers in MEMS processing"",""Electrical characterization of AlxTiyOz mixtures and Al2O3-TiO2-Al2O3 nanolaminates"",""Photonic bandgap engineering with inverse opal multistacks of different refractive index contrasts"",""Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition"",""Biofabrication methods for the patterned assembly and synthesis of viral nanotemplates"",""GaN Nanowire Functionalized with Atomic Layer Deposition Techniques for Enhanced Immobilization of Biomolecules"",""Effect of corona pre-treatment on the performance of gas barrier layers applied by atomic layer deposition onto polymer-coated paperboard"",""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium"",""Atomic layer deposition of SiO _2 using catalyzed and uncatalyzed self-limiting surface reactions"",""Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition"",""Preparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel"",""Atomic layer deposition of photocatalytic TiO2 thin films from TiF4 and H2O"",""Interaction of titanium tetrachloride with silica gel"",""Interaction of titanium and germanium tetrachlorides with hydroxylated silicon dioxide"",""Effect of degree of dehydration of silica gel on mechanism of hydrolysis of adsorbed titanium tetrachloride"",""Preparation and investigation of the products of interaction between titanium tetrachloride and silica gel"",""Changes in the structure of silica gel during formation of a layer of titanium dioxide on its surface"",""Interaction of titanium tetrachloride with hydroxylated silicon surfaces"",""DETERMINATION OF COORDINATION NUMBER OF TITANIUM ATOMS ON A TITANIUM-CONTAINING SILICA SURFACE BY MEASURING SHIFTS IN K _ _1 X -RAY LINES"",""Structural effects of silica surfaces on molecularly superposed titanium-oxygen layers"",""INVESTIGATION OF DEGREE OF MONOCRYSTALLINE SILICON SURFACE HYDRATION AT DIFFERENT TEMPERATURES"",""Investigation of the structure of titanium oxide layers synthesized by molecular stratification on the surface of single-crystal backings"",""Electrical properties of the surface of germanium in contact with transition-metal oxides formed by the molecular deposition method"",""Preparation of titanium oxide coatings on sodium borosilicate glass surfaces by molecular layering and study of the stability of the products obtained in aqueous medium"",""Synthesis of hydroxyl--titanium--carbon solid compounds on diamond by the molecular-stratification method"",""Interaction of titanium tetrachloride with diamond preparations"",""Possibility of the use of a gravimetric method for studying the process of molecular layering in disperse silica samples"",""Investigation of the synthesis process and properties of titanium-oxide films, formed by molecular deposition method"",""Molecular layering of titanium oxide layers and their effect on the chemical stability of optical glass"",""Coordination state of modifier cations on the surface of glass fillers"",""Formation of titanium dioxide films in the course of chemical assembly"",""Change in potential of anodized aluminum upon its modification with titanium dioxide"",""REACTION OF TiCl _4 AND H _2 O VAPOR PRODUCTS WITH A MICA SURFACE"",""INFLUENCE OF THE DEGREE OF HYDROXYLATION OF THE SURFACE - Al _2 O _3 ON THE CHARACTER OF CHEMISORPTION OF TiCl _4"",""Kinetic equation for the reaction of titanium tetrachloride with hydride functional groups on diamond"",""EFFECT OF DEHYDRATION AND REHYDRATION OF THE ALUMINUM-OXIDE SURFACE ON THE CHEMISORPTION OF TiCl _4"",""Phase formation and change in surface acidity in synthesis of titanium oxide layer on - Al _2 O _3 by the molecular lamination method"",""Effect of the history of a disperse system on thermal compaction of materials containing - AlO _ 1.5 and TiO _2"",""Synthesis of oxide layers on silicon polydioxide by molecular deposition with methoxyl functional groups"",""Synthesis and characterization of nanosized titanium oxide films on the (0001) - Al _2 O _3 surface"",""Properties of titanium-containing silicas and the specific features of the state of water on their surfaces"",""Molecular layering of titanium-oxide groups on the surface of copper-containing silica gel"",""Interaction of Titanium Tetrachloride with Products of Thermal Decomposition of Basic Magnesium Carbonate"",""Ultra-thin TiO _2 films by a novel method"",""Atomic layer growth of TiO _2 on silica"",""An IR and NMR study of the chemisorption of TiCl _4 on silica"",""Analytical and chemical techniques in the study of surface species in atomic layer epitaxy"",""Dispersion and distribution of titanium species bound to silica from TiCl _4"",""Growth of titanium dioxide thin films by atomic layer epitaxy"",""Atomic force microscopy study of titanium dioxide thin films grown by atomic layer epitaxy"",""Surface coverage of ALE precursors on oxides"",""Morphology and structure of TiO _2 thin films grown by atomic layer deposition"",""Control of thin film structure by reactant pressure in atomic layer deposition of TiO _2"",""Atomic-layer growth of TiO _2 -II thin films"",""Monitoring of atomic layer deposition by incremental dielectric reflection"",""The electrical field effect on the growth of titanium oxide layers by ML -- ALE"",""Effect of growth conditions on formation of TiO _2 - II thin films in atomic layer deposition process"",""Effect of crystal structure on optical properties of TiO _2 films grown by atomic layer deposition"",""Thickness profiles of thin films caused by secondary reactions in flow-type atomic layer deposition reactors"",""Effects of HCl readsorption on film growth in atomic layer CVD of TiO _2"",""Processing of catalysts by atomic layer epitaxy: modification of supports"",""Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection"",""TiO _2 films by atomic layer deposition: a case of uneven growth at low temperature"",""Spectroscopic study of nanocrystalline TiO _2 thin films grown by atomic layer deposition"",""Surface of TiO _2 during atomic layer deposition as determined by incremental dielectric reflection"",""Composition and thickness determination of thin oxide films: comparison of different programs and methods"",""Deposition of a titania coating on silica by means of the chemical surface coating"",""Grazing-incidence SAXS/WAXD on nanosized TiO _2 films obtained by ALE"",""Anomalous effect of temperature on atomic layer deposition of titanium dioxide"",""In situ quadrupole mass spectrometry and quartz crystal microbalance studies on the atomic layer deposition of titanium dioxide from titanium tetrachloride and water"",""Atomic layer deposition of titanium dioxide from TiCl _4 and H _2 O : investigation of growth mechanism"",""Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO _2 and SnO _2"",""Atomic layer growth of epitaxial TiO _2 thin films from TiCl _4 and H _2 O on - Al _2 O _3 substrates"",""Formation of a thin TiO _2 layer on the surfaces of silica and kaolin pigments through atomic layer deposition"",""Influence of Si (100) surface pretreatment on the morphology of TiO _2 films grown by atomic layer deposition"",""Transmission electron microscopy studies of atomic layer deposition of TiO _2 films grown on silicon"",""TiO _2 atomic layer deposition on ZrO _2 particles using alternate exposures of TiCl _4 and H _2 O"",""Large-scale fabrication of ordered nanobowl arrays"",""Template-assisted fabrication of dense, aligned arrays of titania nanotubes with well-controlled dimensions on substrates"",""Role of Water in the Atomic Layer Deposition of TiO _2 on SiO _2"",""Photonic crystals fabricated using patterned nanorod arrays"",""Characterisation of epitaxial TiO2 thin films grown on MgO(001) using atomic layer deposition"",""Atomic layer deposition in porous structures: 3D photonic crystals"",""TiO2 inverse opals fabricated using low-temperature atomic layer deposition"",""A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition"",""Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2-TiO2 gate dielectrics"",""Nanostructured TiO2 membranes by atomic layer deposition"",""Area-selective ALD of titanium dioxide using lithographically defined poly (methyl methacrylate) films"",""Area selective atomic layer, deposition of titanium dioxide: Effect of precursor chemistry"",""Rapid coating of through-porous substrates by atomic layer deposition"",""Atomic layer deposition of TiO2-xNx thin films for photocatalytic applications"",""Structural study of TiO2 thin films by micro-Raman spectroscopy"",""Atomic layer deposition of TiO2 on mesoporous silica"",""Controlled pore structure modification of diatoms by atomic layer deposition of TiO2"",""ZnO-Al2O3 and ZnO-TiO2 core-shell nanowire dye-sensitized solar cells"",""Infiltration and inversion of holographically defined polymer photonic crystal templates by atomic layer deposition"",""Refractive index gradients in TiO2 thin films grown by atomic layer deposition"",""Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo-TiO2-Al stacks"",""Photonic band tuning in two-dimensional photonic crystal slab waveguides by atomic layer deposition"",""H2S modified atomic layer deposition process for photocatalytic TiO2 thin films"",""Enhanced adhesion of atomic layer deposited titania on polycarbonate substrates"",""ZnO-TiO2 core-shell nanorod/P3HT solar cells"",""Morphological and photoelectrochemical properties of ALD TiO2 films"","""",""Free-standing porous anodic alumina templates for atomic layer deposition of highly ordered TiO2 nanotube arrays on various substrates"",""Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates"",""Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films"",""Atomic Layer Deposition of TiO2 to Bond Free-Standing Nanoporous Alumina Templates to Gold-Coated Substrates as Planar Optical Waveguide Sensors"",""Atomic layer deposition of TiO2 nanostructures for self-cleaning applications"",""Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition"",""Radial Electron Collection in Dye-Sensitized Solar Cells"",""Amorphous to anatase transformation in atomic layer deposited titania thin films induced by hydrothermal treatment at 120 degrees C"",""Effect of the Substrate Nature on the Formation of Thin Titanium Dioxide Films by Molecular Layering"",""Titanium dioxide thin films, their structure and its effect on their photoactivity and photocatalytic properties"",""Surface Acidity and Properties of TiO2/SiO2 Catalysts Prepared by Atomic Layer Deposition: UV-visible Diffuse Reflectance, DRIFTS, and Visible Raman Spectroscopy Studies"",""Atomic layer deposition of TiO2 thin films on nanoporous alumina templates: Medical applications"",""Controlling Atomic Layer Deposition of TiO2 in Aerogels through Surface Functionalization"",""Titania Nanofilm with Electrical Switching Effects upon Hydrogen/Air Exposure at Room Temperature"",""Substrate Materials and Deposition Temperature Dependent Growth Characteristics and Photocatalytic Properties of ALD TiO2 Films"",""Mechanical and tribological property comparison of melt-compounded nanocomposites of atomic-layer-deposition-coated polyamide particles and commercial nanofillers"",""Atomic layer deposited TiO2 films in photodegradation of aqueous salicylic acid"",""The preparation of reusable magnetic and photocatalytic composite nanofibers by electrospinning and atomic layer deposition"",""Epitaxial growth of high-kappa TiO2 rutile films on RuO2 electrodes"",""Phase transformations in titanium dioxide thin films during chemical synthesis under strongly nonequilibrium conditions"",""TiO2-coated carbon nanotubes: A redshift enhanced photocatalysis at visible light"",""Comparative Study of Titanium Dioxide Atomic Layer Deposition on Silicon Dioxide and Hydrogen-Terminated Silicon"",""Ta2O5- and TiO2-based nanostructures made by atomic layer deposition"",""Liquid Core ARROW Waveguides by Atomic Layer Deposition"",""Low temperature atomic layer deposition of titania thin films"",""Space-Limited Crystal Growth Mechanism of TiO2 Films by Atomic Layer Deposition"",""Noble metal-modified TiO2 thin film photocatalyst on porous steel fiber support"",""Direct probe of heterojunction effects upon photoconductive properties of TiO2 nanotubes fabricated by atomic layer deposition"",""Enhancement of Photoelectrochemical Properties of ALD TiO2 Films by Light-Trapping Effect"",""The Effect Exerted by Temperature on the Phase Formation of Titanium Oxide Layer on Silica Surface at Different Stages of Molecular Layering"",""Kinetics of Stop-Flow Atomic Layer Deposition for High Aspect Ratio Template Filling through Photonic Band Gap Measurements"",""Novel TiO 2 /ZnO multilayer mirrors at 'water-window' wavelengths fabricated by atomic layer epitaxy"",""Transparent, Well-Aligned TiO2 Nanotube Arrays with Controllable Dimensions on Glass Substrates for Photocatalytic Applications"",""Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide films""]","[[""Aaltonen, Titta"",""Alnes, Mari"",""Nilsen, Ola"",""Costelle, Leila"",""Fjellv g, Helmer""],[""Lulla, M."",""Asari, J."",""Aarik, J."",""Kukli, K."",""Rammula, R."",""Tapper, U."",""Kauppinen, E."",""Sammelselg, V.""],[""Kemell, Marianna"",""F arm, Elina"",""Ritala, Mikko"",""Leskel a, Markku""],[""R. Matero"",""M. Ritala"",""M. Leskela"",""T. Salo"",""J. Aromaa"",""O. Fors en""],[""R. Matero"",""A. Rahtu"",""M. Ritala"",""M. Leskela"",""T. Sajavaara""],[""R. L. Puurunen""],[""D. R. G. Mitchell"",""D. J. Attard"",""K. S. Finnie"",""G. Triani"",""C. J. Barb e"",""C. Depagne"",""J. R. Bartlett""],[""Xiong, G."",""Elam, J. W."",""Feng, H."",""Han, C. Y."",""Wang, H. H."",""Iton, L. E."",""Curtiss, L. A."",""Pellin, M. J."",""Kung, M."",""Kung, H."",""Stair, P. C.""],[""Elam, J. W."",""Pellin, M. J.""],[""Mitchell, D. R. G."",""Triani, G."",""Attard, D. J."",""Finnie, K. S."",""Evans, P. J."",""Barb e, C. J."",""Bartlett, J. R.""],[""Graugnard, E."",""King, J. S."",""Gaillot, D. P."",""Summers, C. J.""],[""R. L. Puurunen"",""J. Saarilahti"",""H. Kattelus""],[""J ogi, I."",""Kukli, K."",""Kemell, M."",""Ritala, M."",""Leskel a, M.""],[""Hwang, Dae-Kue"",""Noh, Heeso"",""Cao, Hui"",""Chang, Robert P. H.""],[""Sun, Edward"",""Su, Fu-Hsiang"",""Chen, Ching-Huang"",""Chen, Miin-Jang""],[""Gerasopoulos, K."",""McCarthy, M."",""Banerjee, P."",""Fan, X."",""Culver, J. N."",""Ghodssi, R.""],[""Guo, D. J."",""Abdulagatov, A. I."",""Rourke, D. M."",""Bertness, K. A."",""George, S. M."",""Lee, Y. C."",""Tan, W.""],[""Terhi Hirvikorpi"",""Mika V ah a-Nissi"",""Ali Harlin"",""Jaana Marles"",""Ville Miikkulainen"",""Maarit Karppinen""],[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""J. W. Klaus"",""A. W. Ott"",""S. M. George""],[""Harjuoja, J."",""V ayrynen, S."",""Putkonen, M."",""Niinist o, L."",""Rauhala, E.""],[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""],[""Pore, Viljami"",""Kivel a, Tiina"",""Ritala, Mikko"",""Leskel a, Markku""],[""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. M Shevjakov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""S. I. Kol'tsov""],[""S. I. Kol'tsov""],[""G. V. Sveshnikova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""V. N. Pak"","". P. Kostikov"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""V. N. Pak""],[""S. I. Kol'tsov"",""V. E. Drozd"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""V. E. Drozd"",""T. A. Redova"",""V. B. Aleskovskii""],[""V. B. Aleskovskii"",""V. E. Drozd"",""V. F. Kiselev"",""S. N. Kozlov"",""S. I. Kol'tsov"",""A. S. Petrov"",""G. S. Plotnikov""],[""M. N. Tsvetkova"",""I. M. Yur'evskaya"",""A. A. Malygin"",""S. I. Kol'tsov"","". I. Skorik""],[""S. K. Gordeev"",""E. P. Smirnov"",""S. I. Kol'tsov""],[""S. K. Gordeev"",""E. P. Smirnov""],[""V. A. Tolmachev""],[""V. A. Tolmachev"",""M. A. Okatov""],[""V. A. Tolmachev"",""M. A. Okatov"",""V. V. Pal'chevskii""],[""M. N. Tsvetkova"",""V. N. Pak"",""A. A. Malygin"",""S. I. Kol'tsov""],[""A. L. Egorov"","". K. Ezhovskii"",""S. I. Kol'tsov"",""G. V. Anikeev""],[""A. A. Seitmagzimov"",""V. N. Pak"",""S. I. Kol'tsov""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""A. B. Zhidkov"",""E. P. Smirnov""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""N. V. Dolgushev"",""A. A. Malkov"",""A. A. Malygin"",""S. A. Suvorov"",""A. V. Shchukarev"",""A. V. Beljaev"",""V. A. Bykov""],[""V. M. Smirnov"",""A. A. Malkov"",""R. R. Rachovskii""],[""N. V. Dolgushev"",""A. A. Malkov"",""A. A. Malygin"",""S. A. Suvorov"",""A. V. Shchukarev"",""A. V. Beljaev"",""V. A. Bykov""],[""V. N. Pak"",""I. . Tikhomirova"",""T. M. Burkat"",""B. I. Lobov""],[""S. I. Kol'tsov"",""G. N. Kuznetsova""],[""S. A. Morozov"",""A. A. Malkov"",""A. A. Malygin""],[""S. B. Desu""],[""E.-L. Lakomaa"",""S. Haukka"",""T. Suntola""],[""S. Haukka"",""E.-L. Lakomaa"",""A. Root""],[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""],[""S. Haukka"",""E.-L. Lakomaa"",""O. Jylha"",""J. Vilhunen"",""S. Hornytzkyj""],[""M. Ritala"",""M. Leskel a""],[""M. Ritala"",""M. Leskel a"",""L.-S. Johansson"",""L. Niinist o""],[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""],[""J. Aarik"",""A. Aidla"",""T. Uustare"",""V. Sammelselg""],[""J. Aarik"",""A. Aidla"",""V. Sammelselg"",""H. Siimon"",""T. Uustare""],[""J. Aarik"",""A. Aidla"",""T. Uustare""],[""A. Rosental"",""P. Adamson"",""A. Gerst"",""A. Niilisk""],[""V. E. Drozd"",""N. N. Kopilov"",""V. B. Aleskovski""],[""J. Aarik"",""A. Aidla"",""V. Sammelselg"",""T. Uustare""],[""J. Aarik"",""A. Aidla"",""A.-A. Kiisler"",""T. Uustare"",""V. Sammelselg""],[""H. Siimon"",""J. Aarik""],[""H. Siimon"",""J. Aarik"",""T. Uustare""],[""M. Lindblad"",""S. Haukka"",""A. Kyt okivi"",""E.-L. Lakomaa"",""A. Rautiainen"",""T. Suntola""],[""A. Rosental"",""P. Adamson"",""A. Gerst"",""H. Koppel"",""A. Tarre""],[""V. Sammelselg"",""A. Rosental"",""A. Tarre"",""L. Niinist o"",""K. Heiskanen"",""K. Ilmonen"",""L.-S. Johansson"",""T. Uustare""],[""A. Suisalu"",""J. Aarik"",""H. M andar"",""I. Sildos""],[""A. Rosental"",""A. Tarre"",""P. Adamson"",""A. Gerst"",""A. Kasikov"",""A. Niilisk""],[""V. Sammelselg"",""J. Aarik"",""A. Aidla"",""A. Kasikov"",""E. Heikinheimo"",""M. Peussa"",""L. Niinist o""],[""K. Schrijnemakers"",""N. R. E. N. Impens"",""E. F. Vansant""],[""A. Turkovi c""],[""J. Aarik"",""A. Aidla"",""H. Mandar"",""V. Sammelselg""],[""R. Matero"",""A. Rahtu"",""M. Ritala""],[""J. Aarik"",""A. Aidla"",""H. Mandar"",""T. Uustare""],[""A. Tarre"",""A. Rosental"",""V. Sammelselg"",""T. Uustare""],[""J. Aarik"",""A. Aidla"",""H. M andar"",""T. Uustare"",""M. Schuisky"",""A. H rsta""],[""B. J. Ninness"",""D. W. Bousfield"",""C. P. Tripp""],[""K. S. Finnie"",""G. Triani"",""K. T. Short"",""D. R. G. Mitchell"",""D. J. Attard"",""J. R. Bartlett"",""C. J. Barb e""],[""D. R. G. Mitchell"",""D. J. Attard"",""G. Triani""],[""J. D. Ferguson"",""A. R. Yoder"",""A. W. Weimer"",""S. M. George""],[""X. D. Wang"",""E. Graugnard"",""J. S. King"",""Z. L. Wang"",""C. J. Summers""],[""M. S. Sander"",""M. J. C ot e"",""W. Gu"",""B. M. Kile"",""C. P. Tripp""],[""W. Gu"",""C. P. Tripp""],[""Wang, X. D."",""Neff, C."",""Graugnard, E."",""Ding, Y."",""King, J. S."",""Pranger, L. A."",""Tannenbaum, R."",""Wang, Z. L."",""Summers, C. J.""],[""Mitchell, D. R. G."",""Attard, D. J."",""Triani, G.""],[""King, J. S."",""Heineman, D."",""Graugnard, E."",""Summers, C. J.""],[""King, J. S."",""Graugnard, E."",""Summers, C. J.""],[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""San Andr es, E."",""Toledano-Luque, M."",""M artil, I."",""Gonz alez-D iaz, G."",""Kukli, K."",""Uustare, T."",""Aarik, J.""],[""Triyoso, D. H."",""Hegde, R. I."",""Wang, X. D."",""Stoker, M. W."",""Rai, R."",""Ramon, M. E."",""White, B. E."",""Tobin, P. J.""],[""Triani, G."",""Evans, P. J."",""Attard, D. J."",""Prince, K. E."",""Bartlett, J."",""Tan, S."",""Burford, R. P.""],[""Sinha, A."",""Hess, D. W."",""Henderson, C. L.""],[""Sinha, A."",""Hess, D. W."",""Henderson, C. L.""],[""Ritala, M."",""Kemell, M."",""Lautala, M."",""Niskanen, A."",""Leskel a, M."",""Lindfors, S.""],[""Pore, V."",""Heikkil a, M."",""Ritala, M."",""Leskel a, M."",""Areva, S.""],[""Niilisk, A."",""Moppel, M."",""P ars, M."",""Sildos, I."",""Jantson, T."",""Avarmaa, T."",""Jaaniso, R."",""Aarik, J.""],[""Mahurin, S."",""Bao, L. L."",""Yan, W. F."",""Liang, C. D."",""Dai, S.""],[""Losic, D."",""Triani, G."",""Evans, P. J."",""Atanacio, A."",""Mitchell, J. G."",""Voelcker, N. H.""],[""Law, M."",""Greene, L. E."",""Radenovic, A."",""Kuykendall, T."",""Liphardt, J."",""Yang, P. D.""],[""King, J. S."",""Graugnard, E."",""Roche, O. M."",""Sharp, D. N."",""Scrimgeour, J."",""Denning, R. G."",""Turberfield, A. J."",""Summers, C. J.""],[""Kasikov, A."",""Aarik, J."",""M andar, H."",""Moppel, M."",""P ars, M."",""Uustare, T.""],[""J ogi, I."",""Aarik, J."",""Laan, M."",""Lu, J."",""Kukli, K."",""K a ambre, H."",""Sajavaara, T."",""Uustare, T.""],[""Graugnard, E."",""Gaillot, D. P."",""Dunham, S. N."",""Neff, C. W."",""Yamashita, T."",""Summers, C. J.""],[""Pore, V."",""Ritala, M."",""Leskel a, M."",""Areva, S."",""J arn, M."",""J arnstr om, J.""],[""Latella, B. A."",""Triani, G."",""Zhang, Z."",""Short, K. T."",""Bartlett, J. R."",""Ignat, M.""],[""Greene, L. E."",""Law, M."",""Yuhas, B. D."",""Yang, P. D.""],[""Cheng, H. E."",""Chen, C. C.""],[],[""Tan, L. K."",""Chong, M. A. S."",""Gao, H.""],[""J ogi, I."",""P ars, M."",""Aarik, J."",""Aidla, A."",""Laan, M."",""Sundqvist, J."",""Oberbeck, L."",""Heitmann, J."",""Kukli, K.""],[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""Bail on, L."",""Kukli, K."",""Lu, J."",""Ritala, M."",""Leskel a, M.""],[""Tan, Lee Kheng"",""Gao, Han"",""Zong, Yun"",""Knoll, Wolfgang""],[""Ng, Charlene J. W."",""Gao, Han"",""Tan, Timothy Thatt Yang""],[""D.R.G. Mitchell"",""G. Triani"",""Z. Zhang""],[""Martinson, Alex B. F."",""Elam, Jeffrey W."",""Liu, Jun"",""Pellin, Michael J."",""Marks, Tobin J."",""Hupp, Joseph T.""],[""Zhang, Zhaoming"",""Triani, Gerry"",""Fan, Liang-Jen""],[""Antipov, V. V."",""Belyaev, A. P."",""Malygin, A. A."",""Rubets, V. P."",""Sosnov, E. A.""],[""K a ari ainen, M.-L."",""K a ari ainen, T. O."",""Cameron, D. C.""],[""Lu, Junling"",""Kosuda, Kathryn M."",""Van Duyne, Richard P."",""Stair, Peter C.""],[""Narayan, Roger J."",""Monteiro-Riviere, Nancy A."",""Brigmon, Robin L."",""Pellin, Michael J."",""Elam, Jeffrey W.""],[""Ghosal, Sutapa"",""Baumann, Theodore F."",""King, Jeffrey S."",""Kucheyev, Sergei O."",""Wang, Yinmin"",""Worsley, Marcus A."",""Biener, Juergen"",""Bent, Stacey F."",""Hamza, Alex V.""],[""Kumar, Manippady K."",""Tan, Lee K."",""Gosvami, Nitya N."",""Gao, Han""],[""Cheng, Hsyi-En"",""Hsu, Ching-Ming"",""Chen, Yi-Chih""],[""Nevalainen, K."",""Suihkonen, R."",""Etel aaho, P."",""Vuorinen, J."",""J arvel a, P."",""Isom aki, N."",""Hintze, C."",""Leskel a, M.""],[""Vilhunen, Sari"",""Bosund, Markus"",""K a ari ainen, Marja-Leena"",""Cameron, David"",""Sillanp a a, Mika""],[""Santala, Eero"",""Kemell, Marianna"",""Leskel a, Markku"",""Ritala, Mikko""],[""Fr ohlich, K."",""Aarik, J."",""Tapajna, M."",""Rosov a, A."",""Aidla, A."",""Dobro cka, E."",""Hu skov a, K.""],[""Belyaev, A. P."",""Malygin, A. A."",""Antipov, V. V."",""Rubets, V. P.""],[""Lu, Sheng-Yi"",""Tang, Chiung-Wen"",""Lin, Yu-Hsien"",""Kuo, Hsin-Fu"",""Lai, Yao-Cheng"",""Tsai, Meng-Yen"",""Ouyang, Hao"",""Hsu, Wen-Kuang""],[""Methaapanon, Rungthiwa"",""Bent, Stacey F.""],[""Kemell, Marianna"",""H ark onen, Emma"",""Pore, Viljami"",""Ritala, Mikko"",""Leskel a, Markku""],[""Testa, Genni"",""Huang, Yujian"",""Zeni, Luigi"",""Sarro, Pasqualina M."",""Bernini, Romeo""],[""Triani, G."",""Campbell, J. A."",""Evans, P. J."",""Davis, J."",""Latella, B. A."",""Burford, R. P.""],[""Lee, Wen-Jen"",""Hon, Min-Hsiung""],[""Guo, Hongfan"",""Kemell, Marianna"",""Heikkil a, Mikko"",""Leskel a, Markku""],[""Chang, Yung-Huang"",""Liu, Chien-Min"",""Tseng, Yuan-Chieh"",""Chen, Chih"",""Chen, Chia-Chuan"",""Cheng, Hsyi-En""],[""Cheng, Hsyi-En"",""Hsiao, S. H."",""Lu, Deng-Maw""],[""Malkov, A. A."",""Sosnov, E. A."",""Malygin, A. A.""],[""Karuturi, Siva Krishna"",""Liu, Lijun"",""Su, Liap Tat"",""Zhao, Yang"",""Fan, Hong Jin"",""Ge, Xiaochen"",""He, Sailing"",""Yoong, Alfred Tok Iing""],[""H Kumagai"",""Y Tanaka"",""M Murata"",""Y Masuda"",""T Shinagawa""],[""Tan, Lee Kheng"",""Kumar, Manippady K."",""An, Wen Wen"",""Gao, Han""],[""Riikka L. 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water dose on the atomic layer deposition rate of oxide thin films"",""Atomic layer deposition on biological macromolecules: Metal oxide coating of tobacco mosaic virus and ferritin"",""Formation of Al2O3-TiO2 bilayer using atomic layer deposition and its application to dynamic random access memory"",""Template-directed gas-phase fabrication of oxide nanotubes"",""Monolayer-precision fabrication of mixed-organic-inorganic nanohybrid superlattices for flexible electronic devices"",""General Assembly Method for Linear Metal Nanoparticle Chains Embedded in Nanotubes"",""Atomic layer deposition of Al2O3 and TiO2 multilayers for applications as bandpass filters and antireflection coatings"",""Toward Plasmonic Solar Cells: Protection of Silver Nanoparticles via Atomic Layer Deposition of TiO2"",""Use of atomic layer deposition to improve the stability of silver substrates for in situ, high temperature SERS measurements"",""Optical coatings in microscale channels by atomic layer deposition"",""Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition"",""Flexible Replication Technique for High-Aspect-Ratio Nanostructures"",""Area-selective ALD of titanium dioxide using lithographically defined poly (methyl methacrylate) films"",""Amorphous to anatase transformation in atomic layer deposited titania thin films induced by hydrothermal treatment at 120 degrees C"",""Surface Acidity and Properties of TiO2/SiO2 Catalysts Prepared by Atomic Layer Deposition: UV-visible Diffuse Reflectance, DRIFTS, and Visible Raman Spectroscopy Studies"",""TiO _2 THIN-FILMS PREPARED BY PULSED-BEAM CHEMICAL VAPOR-DEPOSITION FROM TITANIUM TETRAISOPROPOXIDE AND WATER"",""TITANIUM ISOPROPOXIDE AS A PRECURSOR IN ATOMIC LAYER EPITAXY OF TITANIUM-DIOXIDE THIN-FILMS"",""Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process"",""Reaction Mechanism Studies on Titanium Isopropoxide-Water Atomic Layer Deposition Process"",""Formation of TiO _2 and ZrO _2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness"",""Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices"",""Fabrication of oxide/semiconducting coaxial nanotubular materials using atomic layer deposition"",""Synthesis of metal-oxide nanotubular structures by using atomic layer deposition on nanotemplates"",""Characteristics of TiO2 films prepared by ALD with and without plasma"",""Atomic Layer Deposition of Titanium Oxide on Self-Assembled-Monolayer-Coated Gold"",""Growth characteristics of atomic layer deposited TiO2 thin films on Ru and Si electrodes for memory capacitor applications"",""A top surface imaging method using area selective ALD on chemically amplified polymer photoresist films"",""Light stamping lithography: Microcontact printing without inks"",""Transformation of the crystalline structure of an ALD TiO2 film on a Ru electrode by O-3 pretreatment"",""Liquid injection atomic layer deposition of TiOx films using Ti[OCH(CH3)(2)](4)"",""Zirconium doping in titanium oxide photocatalytic films prepared by atomic layer deposition"",""Rapid vapor-phase fabrication of organic-inorganic hybrid superlattices with monolayer precision"",""Formation of Titania/Silica hybrid nanowires containing linear mesocage Arrays by evaporation-induced block-copolymer self-assembly and atomic layer deposition"",""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition"",""Improvement in corrosion resistance of CrN coated stainless steel by conformal TiO _2 deposition"",""Corrosion resistance of TiO _2 films grown on stainless steel by atomic layer deposition"",""Atomic layer deposition of TiO _2 films on particles in a fluidized bed reactor"",""Nanostructured Pure Anatase Titania Tubes Replicated from Electrospun Polymer Fiber Templates by Atomic Layer Deposition"",""Nanopatterning materials using area selective atomic layer deposition in conjunction with thermochemical surface modification via heated AFM cantilever probe lithography"",""Atomic layer deposition of TiO2 on aerogel templates: New photoanodes for dye-sensitized solar cells"",""Outer-Sphere Redox Couples as Shuttles in Dye-Sensitized Solar Cells. Performance Enhancement Based on Photoelectrode Modification via Atomic Layer Deposition"",""TiO2 microstructures by inversion of macroporous silicon using atomic layer deposition"",""Titania Nanostructures Fabricated by Atomic Layer Deposition Using Spherical Protein Cages"",""Greatly Increased Toughness of Infiltrated Spider Silk"",""TiO2/TiSi2 Heterostructures for High-Efficiency Photoelectrochemical H2O Splitting"",""Enhanced Chemical Vapor Deposition of Pt Films on UV-exposed TiO2 Surfaces"",""Multitwinned Spinel Nanowires by Assembly of Nanobricks via Oriented Attachment: A Case Study of Zn2TiO4"",""Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2"",""Composition-Dependent Structural and Electrical Properties of ZrxTiyO2 Films Grown on RuO2 Substrate by ALD"",""Photocatalytic Decomposition of Toluene Vapor by Bare and TiO2-coated Carbon Fibers"",""Atomic layer deposition of TiO2 nanotubes and its improved electrostatic capacitance""]","[[""R. Matero"",""A. Rahtu"",""M. Ritala"",""M. Leskela"",""T. Sajavaara""],[""Knez, M."",""Kadri, A."",""Wege, C."",""G osele, U."",""Jeske, H."",""Nielsch, K.""],[""Ko, C. H."",""Lee, W. J.""],[""Bae, C. D."",""Kim, S. Y."",""Ahn, B. Y."",""Kim, J. Y."",""Sung, M. M."",""Shin, H. J.""],[""Byoung H. Lee"",""Kwang H. Lee"",""Seongil Im"",""Myung M. Sung""],[""Qin, Yong"",""Liu, Lifeng"",""Yang, Renbin"",""G osele, Ulrich"",""Knez, Mato""],[""Szeghalmi, Adriana"",""Helgert, Michael"",""Brunner, Robert"",""Heyroth, Frank"",""G osele, Ulrich"",""Knez, Mato""],[""Standridge, Stacey D."",""Schatz, George C."",""Hupp, Joseph T.""],[""John, Joshy F."",""Mahurin, Shannon"",""Dai, Sheng"",""Sepaniak, Michael J.""],[""Gabriel, Nicholas T."",""Talghader, Joseph J.""],[""Scarel, Giovanna"",""Na, Jeong-Seok"",""Parsons, Gregory N.""],[""Szeghalmi, Adriana"",""Sklarek, Kornelia"",""Helgert, Michael"",""Brunner, Robert"",""Erfurth, Wilfried"",""G osele, Ulrich"",""Knez, Mato""],[""Sinha, A."",""Hess, D. 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Kim, Nanotechnology 21, 185601 (2010).""]" +,,Ti(OiPr)4,O3,"236, 890, and 899–906","[236,890,899,900,901,902,903,904,905,906]","["""",""10.1149/1.3169516"","""","""","""","""","""","""","""",""10.1149/1.3125713""]","[""Formation of Al2O3-TiO2 bilayer using atomic layer deposition and its application to dynamic random access memory"",""Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O-2 Reactants"",""High dielectric constant TiO _2 thin films on a Ru electrode grown at 250 ^irc C by atomic-layer deposition"",""Structurally and electrically uniform deposition of high-k TiO2 thin films on a Ru electrode in three-dimensional contact holes using atomic layer deposition"",""Impact of O-3 feeding time on TiO2 films grown by atomic layer deposition for memory capacitor applications"",""Controlling the composition of doped materials by ALD: A case study for Al-doped TiO2 films"",""Surface Reaction Mechanisms during Ozone-Based Atomic Layer Deposition of Titanium Dioxide"",""Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors"",""Growth Behavior of Al-Doped TiO2 Thin Films by Atomic Layer Deposition"",""Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications""]","[[""Ko, C. 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Solid-State Lett."",""J. Appl. Phys."",""Electrochem. Solid-State Lett."",""J. Phys. Chem. C"",""Adv. Mater."",""Chem. Mater."",""J. Electrochem. Soc.""]","[""C. H. Ko and W. J. Lee, J. Solid State Electrochem. 11, 1391 (2007)."",""G.-J. Choi, S. K. Kim, S.-J. Won, H. J. Kim, and C. S. Hwang, J. Electrochem. Soc. 156, G138 (2009)."",""S. K. Kim, W.-D. Kim, K.-M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett. 85, 4112 (2004)."",""S. K. Kim, K. M. Kim, O. S. Kwon, S. W. Lee, C. B. Jeon, W. Y. Park, C. S. Hwang, and J. Jeong, Electrochem. Solid-State Lett. 8, F59 (2005)."",""S. K. Kim, S. Y. Lee, M. Seo, G. J. Choi, and C. S. Hwang, J. Appl. Phys. 102, 024109 (2007)."",""S. K. Kim, G. J. Choi, and C. S. Hwang, Electrochem. Solid-State Lett. 11, G27 (2008)."",""V. R. Rai and S. Agarwal, J. Phys. Chem. C 112, 9552 (2008)."",""S. K. Kim, G. J. Choi, S. Y. Lee, M. Seo, S. W. Lee, J. H. Han, H. S. Ahn, S. Han, and C. S. Hwang, Adv. Mater. 20, 1429 (2008)."",""S. K. Kim, G. J. Choi, J. H. Kim, and C. S. Hwang, Chem. Mater. 20, 3723 (2008)."",""G.-J. Choi, S. K. Kim, S. Y. Lee, W. Y. Park, M. Seo, B. J. Choi, and C. S. Hwang, J. Electrochem. Soc. 156, G71 (2009).""]" +,,Ti(OiPr)4,N2O⚡,890 and 907,"[890,907]","[""10.1149/1.3169516"",""10.1149/1.3269901""]","[""Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O-2 Reactants"",""Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas""]","[[""Choi, Gyu-Jin"",""Kim, Seong Keun"",""Won, Seok-Jun"",""Kim, Hyeong Joon"",""Hwang, Cheol Seong""],[""Won, Seok-Jun"",""Suh, Sungin"",""Lee, Sang Woon"",""Choi, Gyu-Jin"",""Hwang, Cheol Seong"",""Kim, Hyeong Joon""]]","[2009,2010]","[""J. Electrochem. Soc."",""Electrochem. Solid-State Lett.""]","[""G.-J. Choi, S. K. Kim, S.-J. Won, H. J. Kim, and C. S. Hwang, J. Electrochem. Soc. 156, G138 (2009)."",""S.-J. Won, S. Suh, S. W. Lee, G.-J. Choi, C. S. Hwang, and H. J. Kim, Electrochem. Solid-State Lett. 13, G13 (2010).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_010_table_005/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_010_table_005/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..185038878694d63d1959521d9c6e16d1454e3931 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_010_table_005/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,Ti(OiPr)4,HCOOH,908,[908],"[""""]","[""Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition""]","[[""Erwan Rauwel"",""Guylhaine Clavel"",""Marc-Georg Willinger"",""Protima Rauwel"",""Nicola Pinna""]]",[2008],"[""Angew. Chem., Int. Ed.""]","[""E. Rauwel, G. Clavel, M.-G. Willinger, P. Rauwel, and N. Pinna, Angew. Chem., Int. Ed. 47, 3592 (2008).""]" +,,Ti(OiPr)4,CH3COOH,908–911,"[908,909,910,911]","["""","""",""10.1039/b821555c"",""10.1116/1.3058743""]","[""Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition"",""Carboxylic acids as oxygen sources for the atomic layer deposition of high-kappa metal oxides"",""The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing"",""Effect of annealing and electrical properties of high-kappa thin films grown by atomic layer deposition using carboxylic acids as oxygen source""]","[[""Erwan Rauwel"",""Guylhaine Clavel"",""Marc-Georg Willinger"",""Protima Rauwel"",""Nicola Pinna""],[""Rauwel, E."",""Willinger, M. G."",""Ducroquet, F."",""Rauwel, P."",""Matko, I."",""Kiselev, D."",""Pinna, N.""],[""Willinger, Marc-Georg"",""Neri, Giovanni"",""Bonavita, Anna"",""Micali, Giuseppe"",""Rauwel, Erwan"",""Herntrich, Tobias"",""Pinna, Nicola""],[""Rauwel, E."",""Ducroquet, F."",""Rauwel, P."",""Willinger, M. -G."",""Matko, I."",""Pinna, N.""]]","[2008,2008,2009,2009]","[""Angew. Chem., Int. Ed."",""J. Phys. Chem. C"",""Phys. Chem. Chem. Phys."",""J. Vac. Sci. Technol., B""]","[""E. Rauwel, G. Clavel, M.-G. Willinger, P. Rauwel, and N. Pinna, Angew. Chem., Int. Ed. 47, 3592 (2008)."",""E. Rauwel, M. G. Willinger, F. Ducroquet, P. Rauwel, I. Matko, D. Kiselev, and N. Pinna, J. Phys. Chem. C 112, 12754 (2008)."",""M.-G. Willinger, G. Neri, A. Bonavita, G. Micali, E. Rauwel, T. Herntrich, and N. Pinna, Phys. Chem. Chem. Phys. 11, 3615 (2009)."",""E. Rauwel, F. Ducroquet, P. Rauwel, M. G. Willinger, I. Matko, and N. Pinna, J. Vac. Sci. Technol. B 27, 230 (2009).""]" +,,Ti(OiPr)2(dmae)2,H2O,912,[912],"[""""]","[""Atomic layer deposition of TiO _2 thin films from Ti(O ^i Pr) _2 (dmae) _2 and H _2 O""]","[[""J. P. Lee"",""M. H. Park"",""T. M. Chung"",""Y. Kim"",""M. M. Sung""]]",[2004],"[""Bull. Korean Chem. Soc.""]","[""J. P. Lee, M. H. Park, T. M. Chung, Y. Kim, and M. M. Sung, Bull. Korean Chem. Soc. 25, 475 (2004).""]" +,,Ti(OiPr)2(thd)2,H2O,913–916,"[913,914,915,916]","["""","""","""",""10.1149/1.3138722""]","[""Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films"",""Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O"",""Liquid injection ALD of Pb(Zr,Ti)O-x thin films by a combination of self-regulating component oxide processes"",""Liquid Injection Atomic Layer Deposition of Crystalline TiO2 Thin Films with a Smooth Morphology from Ti(O-i-Pr)(2)(DPM)(2)""]","[[""Watanabe, T."",""Hoffmann-Eifert, S."",""Hwang, C. S."",""Waser, R.""],[""Xie, Q."",""Jiang, Y. L."",""Detavernier, C."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""Watanabe, T."",""Hoffmann-Eifert, S."",""Peter, F."",""Mi, S."",""Jia, C."",""Hwang, C. S."",""Waser, R.""],[""Kim, Seong Keun"",""Hoffmann-Eifert, Susanne"",""Mi, Shaobo"",""Waser, Rainer""]]","[2006,2007,2007,2009]","[""J. Electrochem. Soc."",""J. Appl. Phys."",""J. Electrochem. Soc."",""J. Electrochem. Soc.""]","[""T. Watanabe, S. Hoffmann-Eifert, C. S. Hwang, and R. Waser, J. Electrochem. Soc. 153, F199 (2006)."",""Q. Xie, Y. L. Jiang, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, G. P. Ru, B. Z. Li, and X. P. Qu, J. Appl. Phys. 102, 083521 (2007)."",""T. Watanabe, S. Hoffmann-Eifert, F. Peter, S. Mi, C. Jia, C. S. Hwang, and R. Waser, J. Electrochem. Soc. 154, G262 (2007)."",""S. K. Kim, S. Hoffmann-Eifert, S. Mi, and R. Waser, J. Electrochem. Soc. 156, D296 (2009).""]" +,,Ti(trhd)2\-(O(CMe2Et)2,H2O,913,[913],"[""""]","[""Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films""]","[[""Watanabe, T."",""Hoffmann-Eifert, S."",""Hwang, C. S."",""Waser, R.""]]",[2006],"[""J. Electrochem. Soc.""]","[""T. Watanabe, S. Hoffmann-Eifert, C. S. Hwang, and R. Waser, J. Electrochem. Soc. 153, F199 (2006).""]" +,,Ti(OBu)4,H2O,917,[917],"[""""]","[""Pigmentation of mica with titanium dioxide by molecular deposition of titanium tetrabutoxide""]","[[""L. I. Chernaya"",""P. E. Matkovskii"",""V. M. Rudakov"","". M. Shul'ga"",""I. V. Markov"",""V. I. Tomilo"",""Z. G. Busheva""]]",[1992],"[""Zh. Obshch. Khim.""]","[""L. I. Chernaya, P. E. Matkovskii, V. M. Rudakov, Yu. M. Shul’ga, I. V. Markov, V. I. Tomilo, and Z. G. Busheva, Zh. Obshch. Khim. 62, 28 (1992) [J. Gen. Chem. USSR 62, 21 (1992)].""]" +,,Ti(NMe2)4,H2O,"356, 377, 864, 914, and 918–924","[356,377,864,914,918,919,920,921,922,923,924]","[""10.1149/1.3271025"",""10.1002/chem.201001888"","""","""","""",""10.1002/smll.200801249"",""10.1016/j.tsf.2009.08.028"",""10.1021/am900904k"",""10.1016/j.nimb.2009.09.034"",""10.1039/c0cc01689f"",""10.1021/nn1009984""]","[""Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO2 Layer for Nanocrystal Memory Device"",""Molecular Mechanisms of Aluminum Oxide Thin Film Growth on Polystyrene during Atomic Layer Deposition"",""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition"",""Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O"",""Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors"",""Tailoring the Pore Size and Architecture of CeO2/TiO2 Core/Shell Inverse Opals by Atomic Layer Deposition"",""Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces"",""Metal Oxide Microrings with Femtoliter Capacity for Raman Microspectroscopy"",""Elastic behaviour of titanium dioxide films on polyimide substrates studied by in situ tensile testing in a X-ray diffractometer"",""Self-assembled Ni/TiO2 nanocomposite anodes synthesized via electroless plating and atomic layer deposition on biological scaffolds"",""Profile Evolution for Conformal Atomic Layer Deposition over Nanotopography""]","[[""Seo, Il"",""Lee, Do-Joong"",""Hu, Quanli"",""Kwon, Chang-Woo"",""Lim, Kipil"",""Lee, Seung-Hyun"",""Kim, Hyun-Mi"",""Kim, Yong-Sang"",""Lee, Hyun Ho"",""Ryu, Du Yeol"",""Kim, Ki-Bum"",""Yoon, Tae-Sik""],[""Puttaswamy, Manjunath"",""Haugsh j, Kenneth Brian"",""Christensen, Leif Hojslet"",""Kingshott, Peter""],[""Xie, Q."",""Musschoot, J."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Detavernier, C."",""Van den Berghe, S."",""Jiang, Y. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""Xie, Q."",""Jiang, Y. L."",""Detavernier, C."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""Maeng, W. J."",""Kim, H.""],[""Alessandri, Ivano"",""Zucca, Marcello"",""Ferroni, Matteo"",""Bontempi, Elza"",""Depero, Laura E.""],[""Gougousi, Theodosia"",""Lacis, John W.""],[""Alessandri, Ivano"",""Depero, Laura E.""],[""Bontempi, Elza"",""Zanola, Paolo"",""Gelfi, Marcello"",""Zucca, Marcello"",""Depero, Laura E."",""Girault, Baptiste"",""Goudeau, Philippe"",""Geandier, Guillaume"",""Le Bourhis, Eric"",""Renault, Pierre-Olivier""],[""Gerasopoulos, Konstantinos"",""Chen, Xilin"",""Culver, James"",""Wang, Chunsheng"",""Ghodssi, Reza""],[""Cleveland, Erin R."",""Banerjee, Parag"",""Perez, Israel"",""Lee, Sang Bok"",""Rubloff, Gary W.""]]","[2010,2010,2008,2007,2006,2009,2010,2010,2010,2010,2010]","[""Electrochem. Solid-State Lett."",""Chem.--Eur. J."",""J. Electrochem. Soc."",""J. Appl. Phys."",""Electrochem. Solid-State Lett."",""Small"",""Thin Solid Films"",""ACS Appl. Mater. Interfaces"",""Nucl. Instrum. Methods Phys. Res., Sect. B"",""Chem. Comm."",""ACS Nano""]","[""I. Seo, D.-J. Lee, Q. Hu, C.-W. Kwon, K. Lim, S.-H. Lee, H.-M. Kim, Y.-S. Kim, H. H. Lee, D. Y. Ryu, K.-B. Kim, and T.-S. Yoon, Electrochem. Solid-State Lett. 13, K19 (2010)."",""M. Puttaswamy, K. B. Haugsh\u0002j, L. H. Christensen, and P. Kingshott, Chem.–Eur. J. 16, 13925 (2010)."",""Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J. Electrochem. Soc. 155, H688 (2008)."",""Q. Xie, Y. L. Jiang, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, G. P. Ru, B. Z. Li, and X. P. Qu, J. Appl. Phys. 102, 083521 (2007)."",""W. J. Maeng and H. Kim, Electrochem. Solid-State Lett. 9, G191 (2006)."",""I. Alessandri, M. Zucca, M. Ferroni, E. Bontempi, and L. E. Depero, Small 5, 336 (2009)."",""T. Gougousi and J. W. Lacis, Thin Solid Films 518, 2006 (2010)."",""I. Alessandri and L. E. Depero, ACS Appl. Mater. Interfaces 2, 594 (2010)."",""E. Bontempi, P. Zanola, M. Gelfi, M. Zucca, L. E. Depero, B. Girault, P. Goudeau, G. Geandier, E. Le Bourhis, and P.-O. Renault, Nucl. Instrum. Methods Phys. Res. B 268, 365 (2010)."",""K. Gerasopoulos, X. Chen, J. Culver, C. Wang, and R. Ghodssi, Chem. Comm. 46, 7349 (2010)."",""E. R. Cleveland, P. Banerjee, I. Perez, S. B. Lee, and G. W. Rubloff, ACS Nano 4, 4637 (2010).""]" +,,Ti(NMe2)4,O3,418 and 925,"[418,925]","["""",""10.1016/j.apsusc.2009.02.055""]","[""Interfacial studies of Al2O3 deposited on 4H-SiC(0001)"",""Method to determine the sticking coefficient of precursor molecules in atomic layer deposition""]","[[""Diplas, S."",""Avice, M."",""Th gersen, A."",""Christensen, J. S."",""Grossner, U."",""Svensson, B. G."",""Nilsen, O."",""Fjellv g, H."",""Hinderc, S."",""Watts, J. F.""],[""Rose, M."",""Bartha, J. W.""]]","[2008,2009]","[""Surf. Interface Anal."",""Appl. Surf. Sci.""]","[""S. Diplas, M. Avice, A. Th\u0002gersen, J. S. Christensen, U. Grossner, B. G. Svensson, O. Nilsen, H. Fjellva˚g, S. Hinderc, and J. F. Watts, Surf. Interface Anal. 40, 822 (2008)."",""M. Rose and J. W. Bartha, Appl. Surf. Sci. 255, 6620 (2009).""]" +,,Ti(NMe2)4,H2O⚡,864,[864],"[""""]","[""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition""]","[[""Xie, Q."",""Musschoot, J."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Detavernier, C."",""Van den Berghe, S."",""Jiang, Y. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""]]",[2008],"[""J. Electrochem. Soc.""]","[""Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J. Electrochem. Soc. 155, H688 (2008).""]" +,,Ti(NMe2)4,O2⚡,864 and 926–930,"[864,926,927,928,929,930]","["""","""",""10.1016/j.apcatb.2009.06.037"",""10.1149/1.3095515"",""10.1143/JJAP.49.08JG05"",""10.1016/j.tsf.2010.01.015""]","[""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition"",""Very thin TiO _2 films prepared by plasma enhanced atomic layer deposition ( PEALD )"",""Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition"",""Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application"",""Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation"",""Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition""]","[[""Xie, Q."",""Musschoot, J."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Detavernier, C."",""Van den Berghe, S."",""Jiang, Y. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""J.-J. Park"",""W.-J. Lee"",""G.-H. Lee"",""I.-S. Kim"",""B.-C. Shin"",""S.-G. Yoon""],[""Lee, Chang-Soo"",""Kim, Jungwon"",""Son, J. Y."",""Choi, Wonyong"",""Kim, Hyungjun""],[""Lee, Chang-Soo"",""Kim, Jungwon"",""Son, J. Y."",""Maeng, W. J."",""Jo, Du-Hwan"",""Choi, Wonyong"",""Kim, Hyungjun""],[""Kang, Byung-Woo"",""Kim, Woong-Sun"",""Hwang, Chang-Mook"",""Moon, Dae-Yong"",""Kim, Jay-Jung"",""Park, Jae-Gun"",""Park, Jong-Wan""],[""Lee, Chang-Soo"",""Kim, Jungwon"",""Gu, Gil Ho"",""Jo, Du-Hwan"",""Park, Chan Gyung"",""Choi, Wonyong"",""Kim, Hyungjun""]]","[2008,2004,2009,2009,2010,2010]","[""J. Electrochem. Soc."",""Integr. Ferroelectr."",""Appl. Catal. B"",""J. Electrochem. Soc."",""Jpn. J. Appl. Phys."",""Thin Solid Films""]","[""Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J. Electrochem. Soc. 155, H688 (2008)."",""J.-J. Park, W.-J. Lee, G.-H. Lee, I.-S. Kim, B.-C. Shin, and S.-G. Yoon, Integr. Ferroelectr. 68, 129 (2004)."",""C.-S. Lee, J. Kim, J. Y. Son, W. Choi, and H. Kim, Appl. Catal. B 91, 628 (2009)."",""C.-S. Lee, J. Kim, J. Y. Son, W. J. Maeng, D.-H. Jo, W. Choi, and H. Kim, J. Electrochem. Soc. 156, D188 (2009)."",""B.-W. Kang, W.-S. Kim, C.-M. Hwang, D.-Y. Moon, J.-J. Kim, J.-G. Park, and J.-W. Park, Jpn. J. Appl. Phys., Part 1 49, 08JG05 (2010)."",""C.-S. Lee, J. Kim, G. H. Gu, D.-H. Jo, C. G. Park, W. Choi, and H. Kim, Thin Solid Films 518, 4757 (2010).""]" +,,Ti(NMe2)4,q,931,[931],"[""""]","[""Chemisorption of tetrakis(dimethylamido)titanium on Si(100)-2 x 1: C-H and C-N bond reactivity leading to low-temperature decomposition pathways""]","[[""Rodr iguez-Reyes, J. C. F."",""Teplyakov, A. V.""]]",[2008],"[""J. Phys. Chem. C""]","[""J. C. F. Rodr\u0003ıguez-Reyes and A. V. Teplyakov, J. Phys. Chem. C 112, 9695 (2008).""]" +,,TiCp2((iPrN)2\-C(NHiPr)),q,932,[932],"[""10.1021/ic902411h""]","[""A Family of Heteroleptic Titanium Guanidinates: Synthesis, Thermolysis, and Surface Reactivity""]","[[""Wasslen, Yamile A."",""Tois, Eva"",""Haukka, Suvi"",""Kreisel, Kevin A."",""Yap, Glenn P. A."",""Halls, Mathew D."",""Barry, Sean T.""]]",[2010],"[""Inorg. Chem.""]","[""Y. A. Wasslen, E. Tois, S. Haukka, K. A. Kreisel, G. P. A. Yap, M. D. Halls, and S. T. Barry, Inorg. 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Leskel a""]]",[2002],"[""Electrochem. Solid-State Lett.""]","[""M. Juppo, P. Al\u0003en, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Electrochem. Solid-State Lett. 5, C4 (2002).""]" +,,TiCl4,AyNH2,967,[967],"[""""]","[""Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources""]","[[""M. Juppo"",""P. Al en"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2002],"[""Electrochem. Solid-State Lett.""]","[""M. Juppo, P. Al\u0003en, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Electrochem. Solid-State Lett. 5, C4 (2002).""]" +,,TiI4,NH3,936 and 968,"[936,968]","["""",""""]","[""Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures"",""Atomic layer epitaxy growth of TiN thin films from TiI _4 and NH _3""]","[[""P. M rtensson"",""M. Juppo"",""M. Ritala"",""Markku Leskel a"",""J.-O. Carlsson""],[""M. Ritala"",""M. Leskel a"",""E. Rauhala"",""J. 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Keinonen, Science 288, 319 (2000).""]" +23,Vanadium,,,,[],[],[],[],[],[],[] +,VOx,VOCl3,H2O,"581, 668, 698, 705, and 1002–1005","[581,668,698,705,1002,1003,1004,1005]","["""","""","""","""","""","""","""",""""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium"",""Ineraction of chromium-containing silica gel with phosphorus trichloride"",""Investigation of the structure of titanium oxide layers synthesized by molecular stratification on the surface of single-crystal backings"",""Molecular layering of titanium oxide layers and their effect on the chemical stability of optical glass"",""Reaction of vanadyl trichloride with silica"",""STUDIES ON CATALYTICALLY ACTIVE SURFACE COMPOUNDS 1. P REPARATION AND INVESTIGATION OF VANADIUM OXIDE PHASES ON SILICA"",""STUDIES ON CATALYTICALLY ACTIVE SURFACE COMPOUNDS 2. E XISTENCE OF DIFFERENT VANADIUM( V ) OXIDE SURFACE PHASES ON SiO _2 AND THEIR CATALYTIC PROPERTIES"",""Atomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al2O3 and VO2 photonic crystal systems""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""V. E. Drozd"",""T. A. Redova"",""V. B. Aleskovskii""],[""V. A. Tolmachev"",""M. A. Okatov"",""V. V. Pal'chevskii""],[""A. A. Malygin"",""A. N. Volkova"",""S. I. Kol'tsov"",""A. A. Aleskovskii""],[""W. Hanke"",""R. Bienert"",""H.-G. Jerschkewitz""],[""W. Hanke"",""K. Heise"",""H.-G. Jerschkewitz"",""G. Lischke"",""G. Ohlmann"",""B. Parlitz""],[""I.M. Povey"",""M. Bardosova"",""F. Chalvet"",""M.E. Pemble"",""H.M. Yates""]]","[1974,1975,1977,1984,1972,1975,1978,2007]","[""Zh. Prikl. Khim."",""Zh. Obshch. Khim."",""Dokl. Akad. Nauk SSSR"",""Opt. Mekh. Promst."",""Zh. Obshch. Khim."",""Z. Anorg. Allg. Chem."",""Z. Anorg. Allg. Chem."",""Surf. Coat. Technol.""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. 47, 2332 (1974) [J. Appl. Chem. USSR 47, 2390 (1974)]."",""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 45, 3 (1975) [J. Gen. Chem. USSR 45, 1 (1975)]."",""S. I. Kol’tsov, V. E. Drozd, T. A. Redova, and V. B. Aleskovskii, Dokl. Akad. Nauk SSSR 235, 1090 (1977) [Dokl. Phys. Chem. 235, 794 (1977)]."",""V. A. Tolmachev, M. A. Okatov, and V. V. Pal’chevskii, Opt. Mekh. Prom-st. 51, 57 (1984) [Sov. J. Opt. Technol. 51, 368 (1984)]."",""A. A. Malygin, A. N. Volkova, S. I. Kol’tsov, and A. A. Aleskovskii, Zh. Obshch. Khim. 43, 1436 (1972) [J. Gen. Chem. USSR 43, 1426 (1973)]."",""W. Hanke, R. Bienert, and H.-G. Jerschkewitz, Z. Anorg. Allg. Chem. 414, 109 (1975)."",""W. Hanke, K. Heise, H.-G. Jerschkewitz, G. Lischke, G. €Ohlmann, and B. Parlitz, Z. Anorg. Allg. Chem. 438, 176 (1978)."",""I. Povey, M. Bardosova, F. Chalvet, M. Pemble, and H. Yates, Surf. Coat. Technol. 201, 9345 (2007).""]" +,,VO(OiPr)3,H2O,1006–1010,"[1006,1007,1008,1009,1010]","["""","""","""","""",""10.1149/1.3133169""]","[""Atomic Layer Epitaxy of Vanadium Oxide Thin Films and Electrochemical Behavior in Presence of Lithium Ions"",""Electrical properties of V _2 O _5 thin films obtained by atomic layer deposition ( ALD )"",""Amorphous vanadium oxide films synthesised by ALCVD for lithium rechargeable batteries"",""Two-dimensional recrystallisation processes of nanometric vanadium oxide thin films grown by atomic layer chemical vapor deposition (ALCVD) evidenced by AFM"",""Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide""]","[[""J. C. Badot"",""S. Ribes"",""E. B. Yousfi"",""V. Vivier"",""J. P. Pereira-Ramos"",""N. Baffier"",""D. Lincot""],[""J. C. Badot"",""A. Mantoux"",""N. Baffier"",""O. Dubrunfaut"",""D. Lincot""],[""Le Van, K."",""Groult, H."",""Mantoux, A."",""Perrigaud, L."",""Lantelme, F."",""Lindstr om, R."",""Badour-Hadjean, R."",""Zanna, S."",""Lincot, D.""],[""Groult, H."",""Balnois, E."",""Mantoux, A."",""Le Van, K."",""Lincot, D.""],[""Musschoot, J."",""Deduytsche, D."",""Poelman, H."",""Haemers, J."",""Van Meirhaeghe, R. L."",""Van den Berghe, S."",""Detavernier, C.""]]","[2000,2004,2006,2006,2009]","[""Electrochem. Solid-State Lett."",""J. Mater. Chem."",""J. Power Sources"",""Appl. Surf. Sci."",""J. Electrochem. Soc.""]","[""J. C. Badot, S. Ribes, E. B. Yousfi, V. Vivier, J. P. Pereira-Ramos, N. Baffier, and D. Lincot, Electrochem. Solid-State Lett. 3, 485 (2000)."",""J. C. Badot, A. Mantoux, N. Baffier, O. Dubrunfaut, and D. Lincot, J. Mater. Chem. 14, 3411 (2004)."",""K. Le Van, H. Groult, A. Mantoux, L. Perrigaud, F. Lantelme, R. Lindstr€om, R. Badour-Hadjean, S. Zanna, and D. Lincot, J. Power Sources 160, 592 (2006)."",""H. Groult, E. Balnois, A. Mantoux, K. Le Van, and D. Lincot, Appl. Surf. Sci. 252, 5917 (2006)."",""J. Musschoot, D. Deduytsche, H. Poelman, J. Haemers, R. L. Van Meirhaeghe, S. Van den Berghe, and C. Detavernier, J. Electrochem. Soc. 156, P122 (2009).""]" +,,VO(OiPr)3,H2O⚡,1010,[1010],"[""10.1149/1.3133169""]","[""Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide""]","[[""Musschoot, J."",""Deduytsche, D."",""Poelman, H."",""Haemers, J."",""Van Meirhaeghe, R. L."",""Van den Berghe, S."",""Detavernier, C.""]]",[2009],"[""J. Electrochem. Soc.""]","[""J. Musschoot, D. Deduytsche, H. Poelman, J. Haemers, R. L. Van Meirhaeghe, S. Van den Berghe, and C. Detavernier, J. Electrochem. Soc. 156, P122 (2009).""]" +,,VO(OiPr)3,H2O2,1011,[1011],"[""""]","[""Atomic layer deposition for the conformal coating of nanoporous materials""]","[[""Elam, J. W."",""Xiong, G."",""Han, C. Y."",""Wang, H. H."",""Birrell, J. P."",""Welp, U."",""Hryn, J. N."",""Pellin, M. J."",""Baumann, T. F."",""Poco, J. 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Guimon, E. Iiskola, A. Auroux, and L. Niinist€o, J. Phys. Chem. B 107, 10773 (2003)."",""J. Ker€anen, C. Guimon, A. Auroux, E. I. Iiskola, and L. Niinist€o, Phys. Chem. Chem. Phys. 5, 5333 (2003)."",""J. Ker€anen, C. Guimon, E. Iiskola, A. Auroux, and L. Niinist€o, Catal. Today 78, 149 (2003).""]" +,,VO(OiPr)3,O2⚡,1010,[1010],"[""10.1149/1.3133169""]","[""Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide""]","[[""Musschoot, J."",""Deduytsche, D."",""Poelman, H."",""Haemers, J."",""Van Meirhaeghe, R. L."",""Van den Berghe, S."",""Detavernier, C.""]]",[2009],"[""J. Electrochem. Soc.""]","[""J. Musschoot, D. Deduytsche, H. Poelman, J. Haemers, R. L. Van Meirhaeghe, S. Van den Berghe, and C. Detavernier, J. Electrochem. Soc. 156, P122 (2009).""]" +,,VO(OnPr)3,CH3COOH,"910, 1015, and 1016","[910,1015,1016]","[""10.1039/b821555c"",""10.1021/nl801785b"",""10.1016/j.diamond.2009.11.014""]","[""The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing"",""Vanadium Oxide Sensing Layer Grown on Carbon Nanotubes by a New Atomic Layer Deposition Process"",""Micro-Raman investigation of vanadium-oxide coated tubular carbon nanofibers for gas-sensing applications""]","[[""Willinger, Marc-Georg"",""Neri, Giovanni"",""Bonavita, Anna"",""Micali, Giuseppe"",""Rauwel, Erwan"",""Herntrich, Tobias"",""Pinna, Nicola""],[""Willinger, Marc-Georg"",""Neri, Giovanni"",""Rauwel, Erwan"",""Bonavita, Anna"",""Micali, Giuseppe"",""Pinna, Nicola""],[""Santangelo, S."",""Messina, G."",""Faggio, G."",""Willinger, M. -G."",""Pinna, N."",""Donato, A."",""Arena, A."",""Donato, N."",""Neri, G.""]]","[2009,2008,2010]","[""Phys. Chem. Chem. Phys."",""Nano Lett."",""Diamond Relat. Mater.""]","[""M.-G. Willinger, G. Neri, A. Bonavita, G. Micali, E. Rauwel, T. Herntrich, and N. Pinna, Phys. Chem. Chem. Phys. 11, 3615 (2009)."",""M.-G. Willinger, G. Neri, E. Rauwel, A. Bonavita, G. Micali, and N. Pinna, Nano Lett. 8, 4201 (2008)."",""S. Santangelo, G. Messina, G. Faggio, M. G. Willinger, N. Pinna, A. Donato, A. Arena, N. Donato, and G. Neri, Diamond Relat. Mater. 19, 590 (2010).""]" +,,VO(acac)2,O2,1017–1019,"[1017,1018,1019]","["""","""",""""]","[""Preparation, characterization and activity testing of vanadia catalysts deposited onto silica and alumina supports by atomic layer deposition"",""Surface characteristics and activity in selective oxidation of o -xylene of supported V _2 O _5 catalysts prepared by standard impregnation and atomic layer deposition"",""Thin films of VO2 on glass by atomic layer deposition: microstructure and electrical properties""]","[[""J. Keranen"",""A. Auroux"",""S. Ek"",""L. Niinisto""],[""A. Gervasini"",""P. Carniti"",""J. Ker anen"",""L. Niinist o"",""A. Auroux""],[""Pritesh Dagur"",""Anil U. Mane"",""S.A. Shivashankar""]]","[2002,2004,2005]","[""Appl. Catal., A"",""Catal. Today"",""J. Cryst. Growth""]","[""J. Ker€anen, A. Auroux, S. Ek, and L. Niinist€o, Appl. Catal., A 228, 213 (2002)."",""A. Gervasini, P. Carniti, J. Ker€anen, L. Niinist€o, and A. Auroux, Catal. Today 96, 187 (2004)."",""P. Dagur, A. U. Mane, and S. Shivashankar, J. Cryst. Growth 275, e1223 (2005).""]" +24,Chromium,,,,[],[],[],[],[],[],[] +,CrOx,CrO2Cl2,H2O,"581, 668, 670, 698, 705, and 1020–1028","[581,668,670,698,705,1020,1021,1022,1023,1024,1025,1026,1027,1028]","["""","""","""","""","""","""","""","""","""","""","""","""",""10.1134/S1063782607050028"",""10.1134/S0036024408070170""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium"",""Ineraction of chromium-containing silica gel with phosphorus trichloride"",""Reaction of phosphoryl chloride with hydrated silica"",""Investigation of the structure of titanium oxide layers synthesized by molecular stratification on the surface of single-crystal backings"",""Molecular layering of titanium oxide layers and their effect on the chemical stability of optical glass"",""Interaction of chromyl chloride with silica gel"",""Reaction of chromium-containing silica gel with hydrogen chloride"",""Ultramicrochemical investigation of chromium oxide layers synthesized by molecular layering on single-crystal germanium and silicon surfaces"",""Structural characteristics of chromium-containing silica gel prepared by molecular coating"",""Surface activity of metals ( Ni, Ti ) in molecular stratification reactions"",""Changes in the structure of dispersed silica during the molecular stratification of chromium oxide"",""Atomic layer deposition of chromium oxide nanolayers"",""AFM examination of nanolayers synthesised by the molecular layering method on the surface of manufacturing glasses"",""The preparation and properties of chromium oxide nanolayers on semiconducting matrices""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""V. E. Drozd"",""T. A. Redova"",""V. B. Aleskovskii""],[""V. A. Tolmachev"",""M. A. Okatov"",""V. V. Pal'chevskii""],[""A. N. Volkova"",""A. A. Malygin"",""V. M. Smirnov"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. A. Malygin"",""A. N. Volkova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. P. Nechiporenko"",""T. M. Sukhareva"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""A. A. Malygin"",""V. B. Aleskovskii""],[""A. P. Nechiporenko"",""G. K. Shevchenko"",""S. I. Kol'tsov""],[""G. N. Kuznetsova"",""T. V. Shakina"",""A. A. Malygin"",""S. I. Kol'tsov""],[""Ezhovskii, Y. K."",""Kirillova, M. A.""],[""Sosnov, E. A."",""Dorofeev, V. P."",""Malkov, A. A."",""Malygin, A. A."",""Kulikov, N. A."",""Brusilovsky, G. L.""],[""Ezhovskii, Yu. K."",""Kholkin, V. Yu.""]]","[1974,1975,1973,1977,1984,1972,1972,1978,1980,1982,1983,2007,2007,2008]","[""Zh. Prikl. Khim."",""Zh. Obshch. Khim."",""Zh. Obshch. Khim."",""Dokl. Akad. Nauk SSSR"",""Opt. Mekh. Promst."",""Zh. Obshch. Khim."",""Zh. Obshch. Khim."",""Zh. Prikl. Kim."",""Zh. Fiz. Khim."",""Zh. Prikl. Kim."",""Kolloidn. Zh."",""Inorg. Mater."",""Semiconductors"",""Russ. J. Phys. Chem. A""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. 47, 2332 (1974) [J. Appl. Chem. USSR 47, 2390 (1974)]."",""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 45, 3 (1975) [J. Gen. Chem. USSR 45, 1 (1975)]."",""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 43, 724 (1973) [J. Gen. Chem. USSR 43, 723 (1973)]."",""S. I. Kol’tsov, V. E. Drozd, T. A. Redova, and V. B. Aleskovskii, Dokl. Akad. Nauk SSSR 235, 1090 (1977) [Dokl. Phys. Chem. 235, 794 (1977)]."",""V. A. Tolmachev, M. A. Okatov, and V. V. Pal’chevskii, Opt. Mekh. Prom-st. 51, 57 (1984) [Sov. J. Opt. Technol. 51, 368 (1984)]."",""A. N. Volkova, A. A. Malygin, V. M. Smirnov, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 42, 1431 (1972) [J. Gen. Chem. USSR 42, 1422 (1972)]."",""A. A. Malygin, A. N. Volkova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 42, 2373 (1972) [J. Gen. Chem. USSR 42, 2368 (1972)]."",""A. P. Nechiporenko, T. M. Sukhareva, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. 51, 2447 (1978) [J. Appl. Chem. USSR 51, 2333 (1978)]."",""S. I. Kol’tsov, A. A. Malygin, and V. B. Aleskovskii, Zh. Fiz. Khim. 54, 2331 (1980) [Russ. J. Phys. Chem. 54, 2331 (1980)]."",""A. P. Nechiporenko, G. K. Shevchenko, and S. I. Kol’tsov, Zh. Prikl. Khim. 55, 1239 (1982) [J. Appl. Chem. USSR 55, 1133 (1982)]."",""G. N. Kuznetsova, T. V. Shakina, A. A. Malygin, and S. I. Kol’tsov, Kolloidn. Zh. 45, 574 (1983) [Colloid J. USSR 45, 503 (1983)]."",""Y. K. Ezhovskii and M. A. Kirillova, Inorg. Mater. 43, 1318 (2007)."",""E. A. Sosnov, V. P. Dorofeev, A. A. Malkov, A. A. Malygin, N. A. Kulikov, and G. L. Brusilovsky, Semiconductors 41, 498 (2007)."",""Y. K. Ezhovskii and V. Y. Kholkin, Russ. J. Phys. Chem. A 82, 1154 (2008).""]" +,,CrO2Cl2,H2O2,1026,[1026],"[""""]","[""Atomic layer deposition of chromium oxide nanolayers""]","[[""Ezhovskii, Y. K."",""Kirillova, M. A.""]]",[2007],"[""Inorg. Mater.""]","[""Y. K. Ezhovskii and M. A. Kirillova, Inorg. Mater. 43, 1318 (2007).""]" +,,CrO2Cl2,MeOH,"538, 817, and 1028–1031","[538,817,1028,1029,1030,1031]","[""10.1016/j.micromeso.2009.05.024"",""10.1016/j.surfcoat.2009.11.039"",""10.1134/S0036024408070170"","""","""",""""]","[""Structural and chemical modification of porous alumina membranes"",""Structural characterization of TiO2-Cr2O3 nanolaminates grown by atomic layer deposition"",""The preparation and properties of chromium oxide nanolayers on semiconducting matrices"",""Chromium oxide nanolayers on gallium arsenide"",""Characterization of asymmetric rhombohedral twin in epitaxial alpha-Cr2O3 thin films by X-ray and electron diffraction"",""Atomic layer deposition of Cr _2 O _3 thin films: Effect of crystallization on growth and properties""]","[[""Velleman, Leonora"",""Triani, Gerry"",""Evans, Peter J."",""Shapter, Joe G."",""Losic, Dusan""],[""Sammelselg, V."",""Tarre, A."",""Lu, J."",""Aarik, J."",""Niilisk, A."",""Uustare, T."",""Netsipailo, I."",""Rammula, R."",""P arna, R."",""Rosental, A.""],[""Ezhovskii, Yu. 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Losic, Microporous Mesoporous Mater. 126, 87 (2009).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_011_table_006/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_011_table_006/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..79c1ef1a12c61f20d21a72d7079ac4cfe8a666ab --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_011_table_006/gold.csv @@ -0,0 +1,57 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +25,Manganese,,,,[],[],[],[],[],[],[] +,MnOx,Mn(CpEt)2,H2O,1037,[1037],"[""10.1016/j.tsf.2009.02.050""]","[""Atomic layer deposition of MnO using Bis(ethylcyclopentadienyl) manganese and H2O""]","[[""Burton, B. B."",""Fabreguette, F. H."",""George, S. M.""]]",[2009],"[""Thin Solid Films""]","[""B. B. Burton, F. H. Fabreguette, and S. M. George, Thin Solid Films 517, 5658 (2009).""]" +,,Mn(thd)3,O3,1038–1041,"[1038,1039,1040,1041]","["""","""","""",""""]","[""Thin film deposition of lanthanum manganite perovskite by the ALE process"",""Growth of manganese oxide thin films by atomic layer deposition"",""Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition"",""Structure determination of MnO2 films grown on single crystal alpha-Al2O3 substrates""]","[[""O. Nilsen"",""M. Peussa"",""H. Fjellv g"",""L. Niinist o"",""A. Kjekshus""],[""O. Nilsen"",""H. Fjellv g"",""A. Kjekshus""],[""O. Nilsen"",""S. Foss"",""H. Fjellv g"",""A. Kjekshus""],[""Foss, S."",""Nilsen, O."",""Olsen, A."",""Tafto, J.""]]","[1999,2003,2004,2005]","[""J. Mater. Chem."",""Thin Solid Films"",""Thin Solid Films"",""Philos. Mag.""]","[""O. Nilsen, M. Peussa, H. Fjellva˚g, L. Niinist€o, and A. Kjekshus, J. Mater. Chem. 9, 1781 (1999)."",""O. Nilsen, H. Fjellva˚g, and A. 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Solid-State Lett. 11, H107 (2008).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_012_table_007/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_012_table_007/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..31687e95fda9622e9f47fa2a57d728f337dc10ab --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_012_table_007/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,Cu(thd)2,H2,1119–1122,"[1119,1120,1121,1122]","["""","""","""",""10.1116/1.3143663""]","[""Atomic layer epitaxy of copper - Growth and selectivity in the Cu (II)b,2,6,6-tetramethylc,5-heptanedionate/ H _2 process"",""Atomic layer chemical vapour deposition of copper"",""Nanometer spaced electrodes using selective area atomic layer deposition"",""Characterization of ALD copper thin films on palladium seed layers""]","[[""P. 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Deposition 12, 435 (2006).""]" +,,Cu(hfac)2,NH3 + H2O,1141,[1141],"[""""]","[""Growth of copper(I) nitride by ALD using copper(II) hexafluoroacetylacetonate, water, and ammonia as precursors""]","[[""T orndahl, T."",""Ottosson, M."",""Carlsson, J. O.""]]",[2006],"[""J. Electrochem. Soc.""]","[""T. T€orndahl, M. Ottosson, and J. O. Carlsson, J. Electrochem. Soc. 153, C146 (2006).""]" +,CuxS,Cu(thd)2,H2S,1142–1146,"[1142,1143,1144,1145,1146]","["""","""","""","""",""""]","[""Atomic Layer Deposition of Cu _x S"",""Comparative study of atomic layer deposition and low-pressure MOCVD of copper sulfide thin films"",""Growth of conductive copper sulfide thin films by atomic layer deposition"",""Atomic Layer Deposition of Cu _x S for Solar Energy Conversion"",""Comparison of CuxS films grown by atomic layer deposition and chemical vapor deposition""]","[[""L. Reijnen"",""B. Meester"",""A. Goossens"",""J. Schoonman""],[""B. Meester"",""L. Reijnen"",""A. Goossens"",""J. Schoonman""],[""J. 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Status Solidi B 247, 1699 (2010).""]" +,,ZnMe2,O2⚡,1163 and 1164,"[1163,1164]","[""10.1116/1.3119673"",""10.1002/cvde.200806725""]","[""Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition"",""Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc""]","[[""Rowlette, Pieter C."",""Allen, Cary G."",""Bromley, Olivia B."",""Wolden, Colin A.""],[""Rowlette, Pieter C."",""Allen, Cary G."",""Bromley, Olivia B."",""Dubetz, Amy E."",""Wolden, Colin A.""]]","[2009,2009]","[""J. Vac. Sci. Technol., A"",""Chem. Vap. Deposition""]","[""P. C. Rowlette, C. G. Allen, O. B. Bromley, and C. A. Wolden, J. Vac. Sci. Technol. A 27, 761 (2009)."",""P. C. Rowlette, C. G. Allen, O. B. Bromley, A. E. Dubetz, and C. A. Wolden, Chem. Vap. Deposition 15, 15 (2009).""]" +,,ZnMe(OiPr),H2O,1165,[1165],"[""10.1166/jnn.2008.IC47""]","[""Atomic Layer Deposition of Undoped and Al-Doped ZnO Thin Films Using the Zn Alkoxide Precursor Methylzinc lsopropoxide""]","[[""An, Ki-Seok"",""Cho, Wontae"",""Lee, Byung Kook"",""Lee, Sun Sook"",""Kim, Chang Gyoun""]]",[2008],"[""J. Nanosci. Nanotechnol.""]","[""K.-S. An, W. Cho, B. K. Lee, S. S. Lee, and C. G. Kim, J. Nanosci. Nanotechnol. 8, 4856 (2008).""]" +,,ZnEt2,H2O,"60, 117, 145, 147, 204, 240, 264, 282, 291, 297, 300, 305, 306, 318, 323, 346, 350, 352, 368, 374, 812, 1011, 1149, 1157, 1159–1162, and 1166–1265","[60,117,145,147,204,240,264,282,291,297,300,305,306,318,323,346,350,352,368,374,812,1011,1149,1157,1159,1160,1161,1162,1166,1167,1168,1169,1170,1171,1172,1173,1174,1175,1176,1177,1178,1179,1180,1181,1182,1183,1184,1185,1186,1187,1188,1189,1190,1191,1192,1193,1194,1195,1196,1197,1198,1199,1200,1201,1202,1203,1204,1205,1206,1207,1208,1209,1210,1211,1212,1213,1214,1215,1216,1217,1218,1219,1220,1221,1222,1223,1224,1225,1226,1227,1228,1229,1230,1231,1232,1233,1234,1235,1236,1237,1238,1239,1240,1241,1242,1243,1244,1245,1246,1247,1248,1249,1250,1251,1252,1253,1254,1255,1256,1257,1258,1259,1260,1261,1262,1263,1264,1265]","["""","""","""","""","""","""","""",""10.1063/1.2952487"",""10.1021/cm901404p"",""10.1021/nn900702e"",""10.1088/0957-4484/20/44/445202"",""10.1063/1.3216582"",""10.1002/adma.200900136"",""10.1039/b820436e"",""10.1021/nn8006543"",""10.1021/jp908332q"",""10.1002/jrs.2395"",""10.1021/ac902224q"",""10.1016/j.electacta.2010.02.043"",""10.1021/la904604z"","""","""","""","""","""",""10.1063/1.3133803"",""10.1016/j.tsf.2008.11.088"",""10.1002/pssb.200983687"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1016/j.jcrysgro.2006.10.139"","""","""","""","""","""","""","""","""","""","""",""10.1063/1.2836819"","""","""","""","""",""10.1063/1.3000604"","""",""10.1088/0957-4484/19/43/435609"",""10.1109/LPT.2008.2004687"",""10.1002/pssa.200778912"",""DOI: 10.1016/j.tsf.2008.05.026"","""","""",""10.1021/cg900580r"","""",""10.1016/j.tsf.2009.04.066"",""10.1016/j.tsf.2009.09.018"",""10.1088/0022-3727/42/23/235102"",""10.1111/j.1551-2916.2009.03270.x"",""10.1088/0957-4484/20/46/465603"",""10.1088/0268-1242/24/10/105014"",""10.1088/0957-4484/20/16/165201"",""10.1016/j.jcrysgro.2008.11.086"",""10.1116/1.3098502"",""10.1021/cg800985k"",""10.1016/j.mejo.2008.07.053"",""10.1016/j.ssc.2008.11.037"",""10.1002/adma.200801313"",""10.1166/jnn.2009.NS64"",""10.1016/j.tsf.2009.12.030"",""10.1088/0957-4484/21/1/015302"",""10.1109/JQE.2009.2025250"",""10.1149/1.3269973"",""10.1021/cg9013043"",""10.1016/j.matchemphys.2009.12.028"",""10.1002/pssb.200983699"",""10.2320/matertrans.MC200902"",""10.5012/bkcs.2010.31.9.2503"",""DOI: 10.1016/j.tsf.2010.07.069"",""10.1063/1.3514254"",""10.1002/pssa.201026152"","""","""",""10.1021/jp106945n"",""10.1063/1.3486058"",""10.1002/pssa.200925514"","""",""10.1002/sia.3357"",""10.1002/pssa.200983709"",""10.1149/1.3489953"",""10.1149/1.3463723"",""10.1098/rsta.2010.0011"",""""]","[""Atomic layer deposition of Zn1-xMgxO buffer layers for Cu(In,Ga)Se-2 solar cells"",""ALE -reactor for large area depositions"",""X-ray Reflectivity Characterization of ZnO / Al _2 O _3 Multilayers Prepared by Atomic Layer Deposition"",""Growth of ZnO / Al _2 O _3 alloy films using atomic layer deposition techniques"",""Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems"",""Alternative dielectric films for rf MEMS capacitive switches deposited using atomic layer deposited Al2O3/ZnO alloys"",""Indium-free transparent organic light emitting diodes with Al doped ZnO electrodes grown by atomic layer and pulsed laser deposition"",""Synthesis and optical properties of ZnO and carbon nanotube based coaxial heterostructures"",""Role of Gas Doping Sequence in Surface Reactions and Dopant Incorporation during Atomic Layer Deposition of Al-Doped ZnO"",""Surface Polarity Shielding and Hierarchical ZnO Nano-Architectures Produced Using Sequential Hydrothermal Crystal Synthesis and Thin Film Atomic Layer Deposition"",""An efficient Si light-emitting diode based on an n-ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure"",""Photonic bandgap engineering with inverse opal multistacks of different refractive index contrasts"",""Nanoscopic Morphologies in Block Copolymer Nanorods as Templates for Atomic-Layer Deposition of Semiconductors"",""Low-temperature ZnO atomic layer deposition on biotemplates: flexible photocatalytic ZnO structures from eggshell membranes"",""Bi-directional Kirkendall Effect in Coaxial Microtuble Nanolaminate Assemblies Fabricated by Atomic Layer Deposition"",""In Situ Analysis of Dopant Incorporation, Activation, and Film Growth during Thin Film ZnO and ZnO:Al Atomic Layer Deposition"",""Use of atomic layer deposition to improve the stability of silver substrates for in situ, high temperature SERS measurements"",""Integrated Ultramicroelectrode-Nanopipet Probe for Concurrent Scanning Electrochemical Microscopy and Scanning Ion Conductance Microscopy"",""Low-temperature atomic layer deposited Al2O3 thin film on layer structure cathode for enhanced cycleability in lithium-ion batteries"",""Temperature-Dependent Subsurface Growth during Atomic Layer Deposition on Polypropylene and Cellulose Fibers"",""Novel TiO 2 /ZnO multilayer mirrors at 'water-window' wavelengths fabricated by atomic layer epitaxy"",""Atomic layer deposition for the conformal coating of nanoporous materials"",""Conformal ZnO coatings on high surface area silica gel using atomic layer deposition"",""Atomic layer epitaxy growth of doped zinc-oxide thin-films from organometals"",""Hybrid Organic/ZnO p-n Junctions with n-Type ZnO Grown by Atomic Layer Deposition"",""ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions"",""Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass"",""Comparison of dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by atomic layer deposition method"",""Growth of Transparent Conductive Oxide ZnO Films by Atomic Layer Deposition"",""Photo atomic layer deposition of transparent conductive ZnO films"",""Atomic layer deposition of ZnO transparent conducting oxides"",""Growth of Boron-doped ZnO thin films by atomic layer deposition"",""Highly Stable ZnO Thin Films by Atomic Layer Deposition"",""High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact"",""Cu(InGa)Se _2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition"",""Atomic layer deposition of ZnO films and their application to solar cells"",""Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates"",""Zinc-based buffer layer in the Cu(InGa)Se _2 thin film solar cells"",""Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry"",""Cadmium-free buffer layers deposited by atomic later epitaxy for copper indium diselenide solar cells"",""Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se _2 thin-film solar cells"",""Preparation of boron-doped ZnO thin films by photo-atomic layer deposition"",""Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method"",""Theoretical and experimental study of impact of electric field on the atomic layer epitaxy of ZnO on -� Al _2 O _3 surface"",""XPS instrument coupled with ALCVD reactor for investigation of film growth"",""In situ resistivity measurements during the atomic layer deposition of ZnO and W thin films"",""Effect of annealing on the photoluminescence characteristics of ZnO thin films grown on the sapphire substrate by atomic layer epitaxy"",""Photoluminescence Studies of ZnO thin films grown by atomic layer epitaxy"",""Controlling preferred orientation of ZnO thin films by atomic layer deposition"",""Enhancement of ZnO nucleation in ZnO epitaxy by atomic layer epitaxy"",""Surface chemistry and infrared absorbance changes during ZnO atomic layer deposition on ZrO _2 and BaTiO _3 particles"",""Characteristics of organic light emitting diodes with Al-doped ZnO anode deposited by atomic layer deposition"",""Effect of precursor-pulse on properties of Al-doped ZnO films grown by atomic layer deposition"",""Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition"",""Atomic layer deposition of ZnO on ultralow-density nanoporous silica aerogel monoliths"",""Comparison between ZnO films grown by atomic layer deposition using H _2 O or O _3 as oxidant"",""Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se-2 based thin film solar cells: Band alignment and sulfur gradient"",""Dependence of the electrical properties of the ZnO thin films grown by atomic layer epitaxy on the reactant feed sequence"",""Fabrication of ZnO-coated MgO nanorods by using ALD"",""Synthesis and optical properties of ZnO-ZnS core-shell nanotube arrays"",""ZnO nanoparticle growth on single-walled carbon nanotubes by atomic layer deposition and a consequent lifetime elongation of nanotube field emission"",""High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO"",""Effects of substrate temperature on the microstructure and photoluminescence properties of ZnO thin films prepared by atomic layer deposition"",""Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor"",""Atomic layer deposition of epitaxial ZnO on GaN and YSZ"",""Low-Temperature Growth of ZnO Thin Films by Atomic Layer Deposition"",""Transparent ZnO-TFT Arrays fabricated by atomic layer deposition"",""ZnO thin-film transistor ring oscillators with 31-ns propagation delay"",""Blocking the lateral film growth at the nanoscale in area-selective atomic layer deposition"",""ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor"",""Atomic Layer Deposition of UV -Absorbing ZnO Films on SiO _2 and TiO _2 Nanoparticles Using a Fluidized Bed Reactor"",""Variation of ZnO shell thickness and its effects on the characteristics of coaxial nanowires"",""Composite nanowires with MgO/ZnO core-sheath structures: Study of thin ZnO shell layers"",""Thermochemistry of nanoparticles on a substrate: Zinc oxide on amorphous silica"",""Aerogel Templated ZnO Dye-Sensitized Solar Cells"",""Extremely low temperature growth of ZnO by atomic layer deposition"",""Low-threshold stimulated emission in ZnO thin films grown by atomic layer deposition"",""Characteristics of Zinc-Oxide-Sulfide-Mixed Films Deposited by Using Atomic Layer Deposition"",""Extra-Low Temperature Growth of ZnO Thin Films by Atomic Layer Deposition"",""Microstructure of Intrinsic ZnO Thin Film Grown by Using Atomic Layer Deposition"",""Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing"",""Characterization of ZnO Films Grown at Low Temperature"",""Preferential growth of ZnO thin films by the atomic layer deposition technique"",""Ultraviolet Electroluminescence From n-ZnO-SiO2-ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias"",""Effects of surface pretreatment on growth of ZnO on glass substrate"",""Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor"",""Influence of a ZnO coating on the photoluminescence properties of SnO2 nanobelts"",""ZnO by ALD - Advantages of the Material Grown at Low Temperature"",""Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition"",""Optical and electrical characterization of defects in zinc oxide thin films grown by atomic layer deposition"",""ZnO layers grown by Atomic Layer Deposition: A new material for transparent conductive oxide"",""Fabrication of epitaxial ZnO films by atomic-layer deposition with interrupted flow"",""Investigation of the effects of interface carrier concentration on ZnO thin film transistors fabricated by atomic layer deposition"",""Synthesis and Gas Sensing Properties of TiO2-ZnO Core-Shell Nanofibers"",""Synthesis of SnO2-ZnO core-shell nanofibers via a novel two-step process and their gas sensing properties"",""Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature"",""Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN heterojunction light-emitting diodes"",""Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors"",""Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films"",""Growing ZnO Nanocrystals on Polystyrene Nanospheres by Extra-Low-Temperature Atomic Layer Deposition"",""The influence of growth temperature and precursors' doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique"",""Preparation of one dimensional Bi2O3-core/ZnO-shell structures by thermal evaporation and atomic layer deposition"",""Atomic Layer Deposition of ZnO in Quantum Dot Thin Films"",""Coating of Nanoporous Membranes: Atomic Layer Deposition versus Sputtering"",""Monocrystalline zinc oxide films grown by atomic layer deposition"",""ZnTe-ZnO core-shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition"",""UV Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition"",""Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties"",""Epitaxial Growth of m-Plane ZnO Thin Films on (10(1)over-bar0) Sapphire Substrate by Atomic Layer Deposition with Interrupted Flow"",""Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow"",""Zinc oxide grown by atomic layer deposition - a material for novel 3D electronics"",""Structure and Electro-Optical Properties of Thin Films Grown by Alternate Atomic Layer Deposition of ZnO and Al2O3 on the Sapphire Substrate"",""Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition"",""Structure and stimulated emission of a high-quality zinc oxide epilayer grown by atomic layer deposition on the sapphire substrate"",""In situ synchrotron x-ray characterization of ZnO atomic layer deposition"",""A comparative study of the photoluminescence and conduction mechanisms of low temperature pulsed laser deposited and atomic layer deposited zinc oxide thin films"",""A synthesis and sensing application of hollow ZnO nanofibers with uniform wall thicknesses grown using polymer templates"",""Atomic Layer Deposition of ZnO on Multi-walled Carbon Nanotubes and Its Use for Synthesis of CNT-ZnO Heterostructures"",""Shrinking Core Model for Knudsen Diffusion-Limited Atomic Layer Deposition on a Nanoporous Monolith with an Ultrahigh Aspect Ratio"",""The properties of tris (8-hydroxyquinoline) aluminum organic light emitting diode with undoped zinc oxide anode layer"",""The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition"",""Enhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition"",""Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition"",""Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition"",""Fabrication and Characteristics of Self-Aligned ZnO Nanotube and Nanorod Arrays on Si Substrates by Atomic Layer Deposition"",""Stimulated Emission in Highly (0001)-Oriented ZnO Films Grown by Atomic Layer Deposition on the Amorphous Glass Substrates"",""Atomic layer deposition-based functionalization of materials for medical and environmental health applications"",""Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation""]","[[""T orndahl, T."",""Platzer-Bj orkman, C."",""Kessler, J."",""Edoff, M.""],[""J. I. Skarp"",""P. J. Soininen"",""P. T. Soininen""],[""J. M. Jensen"",""A. B. Oelkers"",""R. Toivola"",""D. C. Johnson"",""J. W. Elam"",""S. M. George""],[""J. W. Elam"",""S. M. George""],[""Stoldt, C. R."",""Bright, V. M.""],[""Herrmann, C. F."",""DelRio, F. W."",""Miller, D. C."",""George, S. M."",""Bright, V. M."",""Ebel, J. L."",""Strawser, R. E."",""Cortez, R."",""Leedy, K. D.""],[""Meyer, J."",""G orrn, P."",""Hamwi, S."",""Johannes, H. H."",""Riedl, T."",""Kowalsky, W.""],[""Kim, D. S."",""Lee, S. -M."",""Scholz, R."",""Knez, M."",""G osele, U."",""Fallert, J."",""Kalt, H."",""Zacharias, M.""],[""Na, Jeong-Seok"",""Peng, Qing"",""Scarel, Giovanna"",""Parsons, Gregory N.""],[""Na, Jeong-Seok"",""Gong, Bo"",""Scarel, Giovanna"",""Parsons, Gregory N.""],[""Sun, Edward"",""Su, Fu-Hsiang"",""Shih, Ying-Tsang"",""Tsai, Hung-Ling"",""Chen, Ching-Huang"",""Wu, Mong-Kai"",""Yang, Jer-Ren"",""Chen, Miin-Jang""],[""Hwang, Dae-Kue"",""Noh, Heeso"",""Cao, Hui"",""Chang, Robert P. H.""],[""Wang, Yong"",""Qin, Yong"",""Berger, Andreas"",""Yau, Eric"",""He, Changcheng"",""Zhang, Lianbing"",""G osele, Ulrich"",""Knez, Mato"",""Steinhart, Martin""],[""Lee, Seung-Mo"",""Grass, Gregor"",""Kim, Gyeong-Man"",""Dresbach, Christian"",""Zhang, Lianbing"",""G osele, Ulrich"",""Knez, Mato""],[""Peng, Qing"",""Sun, Xiao-Yu"",""Spagnola, Joseph C."",""Saquing, Carl"",""Khan, Saad A."",""Spontak, Richard J."",""Parsons, Gregory N.""],[""Na, Jeong-Seok"",""Scarel, Giovanna"",""Parsons, Gregory N.""],[""John, Joshy F."",""Mahurin, Shannon"",""Dai, Sheng"",""Sepaniak, Michael J.""],[""Comstock, David J."",""Elam, Jeffrey W."",""Pellin, Michael J."",""Hersam, Mark C.""],[""Lee, Jyh-Tsung"",""Wang, Fu-Ming"",""Cheng, Chin-Shu"",""Li, Chia-Chen"",""Lin, Chun-Hao""],[""Jur, Jesse S."",""Spagnola, Joseph C."",""Lee, Kyoungmi"",""Gong, Bo"",""Peng, Qing"",""Parsons, Gregory N.""],[""H Kumagai"",""Y Tanaka"",""M Murata"",""Y Masuda"",""T Shinagawa""],[""Elam, J. W."",""Xiong, G."",""Han, C. Y."",""Wang, H. H."",""Birrell, J. P."",""Welp, U."",""Hryn, J. N."",""Pellin, M. J."",""Baumann, T. F."",""Poco, J. F."",""Satcher, J. H.""],[""Libera, J. A."",""Elam, J. W."",""Pellin, M. J.""],[""V. Lujala"",""J. Skarp"",""M. Tammenmaa"",""T. Suntola""],[""uka, G."",""Krajewski, T."",""Wachnicki, L."",""Szczepanik, A."",""Fidelus, J. D."",""Szczerbakow, A."",""usakowska, E."",""Kopalko, K."",""Guziewicz, E."",""Godlewski, M.""],[""Guziewicz, E."",""Godlewski, M."",""Krajewski, T."",""Wachnicki, L."",""Szczepanik, A."",""Kopalko, K."",""W ojcik-Glodowska, A."",""Przezdziecka, E."",""Paszkowicz, W."",""usakowska, E."",""Kruszewski, P."",""Huby, N."",""Tallarida, G."",""Ferrari, S.""],[""Makino, Hisao"",""Miyake, Aki"",""Yamada, Takahiro"",""Yamamoto, Naoki"",""Yamamoto, Tetsuya""],[""Wachnicki, L."",""ukasiewicz, M."",""Witkowski, B."",""Krajewski, T."",""uka, G."",""Kopalko, K."",""Minikayev, R."",""Przezdziecka, E."",""Domaga a, J. Z."",""Godlewski, M."",""Guziewicz, E.""],[""B. Sang"",""M. Konagai""],[""K. Saito"",""Y. Watanabe"",""K. Takahashi"",""T. Matsuzawa"",""B. Sang"",""M. Konagai""],[""A. Yamada"",""B. Sang"",""M. Konagai""],[""B. Sang"",""A. Yamada"",""M. Konagai""],[""B. Sang"",""A. Yamada"",""M. Konagai""],[""B. Sang"",""K. Dairiki"",""A. Yamada"",""M. Konagai""],[""S. Chaisitsak"",""T. Sugiyama"",""A. Yamada"",""M. Konagai""],[""A. Yamada"",""M. Konagai""],[""A. W. Ott"",""R. P. H. Chang""],[""A. Shimizu"",""S. Chaisitsak"",""T. Sugiyama"",""A. Yamada"",""M. Konagai""],[""E. B. Yousfi"",""J. Fouache"",""D. Lincot""],[""E. B. Yousfi"",""T. Asikainen"",""V. Pietu"",""P. Cowache"",""M. Powalla"",""D. Lincot""],[""E. B. Yousfi"",""B. Weinberger"",""F. Donsanti"",""P. Cowache"",""D. Lincot""],[""Y. Yamamoto"",""K. Saito"",""K. Takahashi"",""M. Konagai""],[""C. H. Liu"",""M. Yan"",""X. Liu"",""E. Seelig"",""R. P. H. Chang""],[""C. H. Liu"",""R. P. H. Chang""],[""J. Sterner"",""J. Kessler"",""L. Stolt""],[""M. Schuisky"",""J. W. Elam"",""S. M. George""],[""J. Lim"",""K. Shin"",""K. W. Kim"",""C. Lee""],[""J. Lim"",""K. Shin"",""H. W. Kim"",""C. Lee""],[""S.-H. K. Park"",""Y. E. Lee""],[""J. Lim"",""K. Shin"",""H. Kim"",""C. Lee""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""Park, S. H. K."",""Lee, J. I."",""Hwang, C. S."",""Chu, H. Y.""],[""Kwon, S. J.""],[""Scharrer, M."",""Wu, X."",""Yamilov, A."",""Cao, H."",""Chang, R. P. H.""],[""Kucheyev, S. O."",""Biener, J."",""Wang, Y. M."",""Baumann, T. F."",""Wu, K. J."",""van Buuren, T."",""Hamza, A. V."",""Satcher, J. H."",""Elam, J. W."",""Pellin, M. J.""],[""S. K. Kim"",""C. S. Hwang"",""S.-H. K. Park"",""S. J. Yun""],[""Platzer-Bj orkman, C."",""T orndahl, T."",""Abou-Ras, D."",""Malmstr om, J."",""Kessler, J."",""Stolt, L.""],[""Lee, C."",""Lim, J.""],[""Kim, H. W."",""Shim, S. H.""],[""Liao, H. C."",""Kuo, P. C."",""Lin, C. C."",""Chen, S. Y.""],[""Min, Y. S."",""Bae, E. J."",""Park, J. B."",""Kim, U. J."",""Park, W."",""Song, J."",""Hwang, C. S."",""Park, N.""],[""Lim, S. J."",""Kwon, S. J."",""Kim, H."",""Park, J. S.""],[""Lim, J."",""Lee, C.""],[""I.A. Kowalik"",""E. Guziewicz"",""K. Kopalko"",""S. Yatsunenko"",""M. Godlewski"",""A. Wojcik"",""V. Osinniy"",""T. Krajewski"",""T. Story"",""E. usakowska"",""W. Paszkowicz""],[""Lin, Chih-Wei"",""Ke, Dong-Jie"",""Chao, Yen-Cheng"",""Chang, Li"",""Liang, Mei-Hui"",""Ho, Yen-Teng""],[""Kim, E. H."",""Lee, D. H."",""Chung, B. H."",""Kim, H. S."",""Kim, Y."",""Noh, S. J.""],[""Park, S. H. K."",""Hwang, C. S."",""Jeong, H. Y."",""Chu, H. Y."",""Cho, K. I.""],[""Sun, J."",""Mourey, D. A."",""Zhao, D. L."",""Park, S. K."",""Nelson, S. F."",""Levy, D. H."",""Freeman, D."",""Cowdery-Corvan, P."",""Tutt, L."",""Jackson, T. N.""],[""Ras, R. H. A."",""Sahramo, E."",""Malm, J."",""Raula, J."",""Karppinen, M.""],[""Lim, S. J."",""Kwon, S. J."",""Kim, H.""],[""David M. King"",""Xinhua Liang"",""Casey S. Carney"",""Luis F. Hakim"",""Peng Li"",""Alan W. Weimer""],[""Kim, H. W."",""Shim, S. H."",""Lee, J. W.""],[""Kim, H. W."",""Lee, J. W."",""Shim, S. H.""],[""Shvareva, T. Y."",""Ushakov, S. V."",""Navrotsky, A."",""Libera, J. A."",""Elam, J. W.""],[""Thomas W. Hamann"",""Alex B. F. Martinson"",""Jeffrey W. Elam"",""Michael J. Pellin"",""Joseph T. Hupp""],[""E. Guziewicz"",""I. A. Kowalik"",""M. Godlewski"",""K. Kopalko"",""V. Osinniy"",""A. Wojcik"",""S. Yatsunenko"",""E. usakowska"",""W. Paszkowicz"",""M. Guziewicz""],[""Chen, H. C."",""Chen, M. J."",""Wu, M. K."",""Cheng, Y. C."",""Tsai, F. Y.""],[""Jeon, Sunyeol"",""Bang, Seokhwan"",""Lee, Seungjun"",""Kwon, Semyung"",""Jeong, Wooho"",""Jeon, Hyeongtag"",""Chang, Ho Jung"",""Park, Hyung-Ho""],[""Guziewicz, E."",""Godlewski, M."",""Kopalko, K."",""Kowalik, I. A."",""Yatsunenko, S."",""Osinnyi, V."",""Paszkowicz, W."",""usakowska, E."",""Dluzewski, P.""],[""Hur, Jae-Sung"",""Jang, Samseok"",""Kim, Donghwan"",""Byun, Dongjin"",""Son, Chang-Sik""],[""Dunlop, L."",""Kursumovic, A."",""MacManus-Driscoll, J. L.""],[""Przezdziecka, E."",""Krajewski, T."",""Wachnicki, L."",""Szczepanik, A."",""W ojcik-Glodowska, A."",""Yatsunenko, S."",""usakowska, E."",""Paszkowicz, W."",""Guziewicz, E."",""Godlewski, M.""],[""Pung, Swee-Yong"",""Choy, Kwang-Leong"",""Hou, Xianghui"",""Shan, Chongxin""],[""Wu, M. K."",""Shih, Y. T."",""Li, W. C."",""Chen, H. C."",""Chen, M. J."",""Kuan, H."",""Yang, J. R."",""Shiojiri, M.""],[""Makino, Hisao"",""Kishimoto, Seiichi"",""Yamada, Takahiro"",""Miyake, Aki"",""Yamamoto, Naoki"",""Yamamoto, Tetsuya""],[""David M. King"",""Xinhua Liang"",""Peng Li"",""Alan W. Weimer""],[""Park, Sunghoon"",""Kim, Hohyeong"",""Lee, Jong Woo"",""Kim, Hyoun Woo"",""Lee, Chongmu""],[""Guziewicz, E."",""Godlewski, M."",""Krajewski, T. A."",""Wachnicki, L."",""uka, G."",""Paszkowicz, W."",""Domaga a, J. Z."",""Przezdziecka, E."",""usakowska, E."",""Witkowski, B. S.""],[""Yang, S."",""Lin, B. H."",""Liu, W. -R."",""Lin, J. -H."",""Chang, C. -S."",""Hsu, C. -H."",""Hsieh, W. F.""],[""Krajewski, Tomasz A."",""uka, Grzegorz"",""Wachnicki, Lukasz"",""Jakiela, Rafal"",""Witkowski, Bartlomiej"",""Guziewicz, Elzbieta"",""Godlewski, Marek"",""Huby, Nolwenn"",""Tallarida, Grazia""],[""Godlewski, M."",""Guziewicz, E."",""uka, G."",""Krajewski, T."",""ukasiewicz, M."",""Wachnicki, L."",""Wachnicka, A."",""Kopalko, K."",""Sarem, A."",""Dalati, B.""],[""Ku, Ching-Shun"",""Huang, Jheng-Ming"",""Lin, Chih-Ming"",""Lee, Hsin-Yi""],[""Bang, Seokhwan"",""Lee, Seungjun"",""Park, Joohyun"",""Park, Soyeon"",""Jeong, Wooho"",""Jeon, Hyeongtag""],[""Park, Jae Young"",""Choi, Sun-Woo"",""Lee, Jun-Won"",""Lee, Chongmu"",""Kim, Sang Sub""],[""Choi, Sun-Woo"",""Park, Jae Young"",""Kim, Sang Sub""],[""Przezdziecka, E."",""Wachnicki, L."",""Paszkowicz, W."",""usakowska, E."",""Krajewski, T."",""uka, G."",""Guziewicz, E."",""Godlewski, M.""],[""Shih, Ying Tsang"",""Wu, Mong Kai"",""Li, Wei Chih"",""Kuan, Hon"",""Yang, Jer Ren"",""Shiojiri, Makoto"",""Chen, Miin Jang""],[""Kowalik, I. A."",""Guziewicz, E."",""Kopalko, K."",""Yatsunenko, S."",""W ojcik-Glodowska, A."",""Godlewski, M."",""Dluzewski, P."",""usakowska, E."",""Paszkowicz, W.""],[""Shan, C. X."",""Zhang, J. Y."",""Yao, B."",""Shen, D. Z."",""Fan, X. W."",""Choy, K. L.""],[""Alessandri, I."",""Zucca, M."",""Ferroni, M."",""Bontempi, E."",""Depero, L. E.""],[""Krajewski, T."",""Guziewicz, E."",""Godlewski, M."",""Wachnicki, L."",""Kowalik, I. A."",""W ojcik-Glodowska, A."",""ukasiewicz, M."",""Kopalko, K."",""Osinniy, V."",""Guziewicz, M.""],[""Park, Sunghoon"",""Jun, Jina"",""Kim, Hoyun Woo"",""Lee, Chongmu""],[""Pourret, Alexandre"",""Guyot-Sionnest, Philippe"",""Elam, Jeffrey W.""],[""Grigoras, K."",""Airaksinen, V. -M."",""Franssila, S.""],[""Wachnicki, L."",""Krajewski, T."",""uka, G."",""Witkowski, B."",""Kowalski, B."",""Kopalko, K."",""Domaga a, J. Z."",""Guziewicz, M."",""Godlewski, M."",""Guziewicz, E.""],[""Janik, E."",""Wachnicka, A."",""Guziewicz, E."",""Godlewski, M."",""Kret, S."",""Zaleszczyk, W."",""Dynowska, E."",""Presz, A."",""Karczewski, G."",""Wojtowicz, T.""],[""Chen, Hsing-Chao"",""Chen, Miin-Jang"",""Wu, Mong-Kai"",""Li, Wei-Chih"",""Tsai, Hung-Ling"",""Yang, Jer-Ren"",""Kuan, Hon"",""Shiojiri, Makoto""],[""Lim, S. J."",""Kim, Jae-Min"",""Kim, Doyoung"",""Kwon, Soonju"",""Park, Jin-Seong"",""Kim, Hyungjun""],[""Ku, Ching-Shun"",""Lee, Hsin-Yi"",""Huang, Jheng-Ming"",""Lin, Chih-Ming""],[""Ku, Ching-Shun"",""Lee, Hsin-Yi"",""Huang, Jheng-Ming"",""Lin, Chih-Ming""],[""Guziewicz, Elzbieta"",""Godlewski, Marek"",""Krajewski, Tomasz A."",""Wachnicki, Lukasz"",""uka, Grzegorz"",""Domaga a, Jaroslaw Z."",""Paszkowicz, Wojciech"",""Kowalski, Bogdan J."",""Witkowski, Bardlomiej S."",""Du zy nska, Anna"",""Suchocki, Andrzej""],[""Ceh, Miran"",""Chen, Hsing-Chao"",""Chen, Miin-Jang"",""Yang, Jer-Ren"",""Shiojiri, Makoto""],[""Min, Yo-Sep"",""An, Cheng Jin"",""Kim, Seong Keun"",""Song, Jaewon"",""Hwang, Cheol Seong""],[""H.C. Chen"",""M.J. Chen"",""T.C. Liu"",""J.R. Yang"",""M. Shiojiri""],[""D. D. Fong"",""J. A. Eastman"",""S. K. Kim"",""T. T. Fister"",""M. J. Highland"",""P. M. Baldo"",""P. H. Fuoss""],[""Kuo, Fang Ling"",""Lin, Ming-Te"",""Mensah, Benedict A."",""Scharf, Thomas W."",""Shepherd, Nigel D.""],[""Jae Young Park"",""Sun-Woo Choi"",""Sang Sub Kim""],[""Li, X."",""Li, C."",""Zhang, Y."",""Chu, D."",""Milne, W."",""Fan, H.""],[""Lee, Hoo-Yong"",""An, Cheng Jin"",""Piao, Shan Ji"",""Ahn, Dae Young"",""Kim, Mun-Tae"",""Min, Yo-Sep""],[""G. uka"",""P. Stakhira"",""V. Cherpak"",""D. Volynyuk"",""Z. Hotra"",""M. Godlewski"",""E. Guziewicz"",""B. Witkowski"",""W. Paszkowicz"",""A. Kostruba""],[""Lee, Seungjun"",""Bang, Seokhwan"",""Park, Joohyun"",""Park, Soyeon"",""Jeong, Wooho"",""Jeon, Hyeongtag""],[""Yuan-Ming Chang"",""Sheng-Rui Jian"",""Hsin-Yi Lee"",""Chih-Ming Lin"",""Jenh-Yih Juang""],[""Ahn, Cheol Hyoun"",""Woo, Chang Ho"",""Hwang, SooYeon"",""Lee, Jeong Yong"",""Cho, Hyung Koun"",""Cho, Hyoung Jin"",""Yeom, Geun Young""],[""uka, Grzegorz"",""Krajewski, Tomasz"",""Wachnicki, Lukasz"",""Witkowski, Bartlomiej"",""usakowska, Elzbieta"",""Paszkowicz, Wojciech"",""Guziewicz, Elzbieta"",""Godlewski, Marek""],[""Chang, Yung-Huang"",""Wang, Shun-Min"",""Liu, Chien-Min"",""Chen, Chih""],[""Shih, Y. T."",""Chiu, C. Y."",""Chang, C. W."",""Yang, J. R."",""Shiojiri, M."",""Chen, M. J.""],[""Narayan, Roger J."",""Adiga, Shashishekar P."",""Pellin, Michael J."",""Curtiss, Larry A."",""Hryn, Alexander J."",""Stafslien, Shane"",""Chisholm, Bret"",""Shih, Chun-Che"",""Shih, Chun-Ming"",""Lin, Shing-Jong"",""Su, Yea-Yang"",""Jin, Chunming"",""Zhang, Junping"",""Monteiro-Riviere, Nancy A."",""Elam, Jeffrey W.""],[""J. Malm"",""E. Sahramo"",""J. Per al a"",""T. Sajavaara"",""M. 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Growth 148, 223 (1995).""]" +,,ZnCl2,H2S,"77, 78, 84, and 1290–1305","[77,78,84,1290,1291,1292,1293,1294,1295,1296,1297,1298,1299,1300,1301,1302,1303,1304,1305]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","["""","""",""Introducing atomic layer epitaxy for the deposition of optical thin films"",""ATMOSPHERIC-PRESSURE ATOMIC LAYER EPITAXY OF ZnS USING Zn AND H _2 S"",""Structure of a zinc sulfide film prepared by molecular stratification on the surface of disperse silica"",""CHARACTERIZATION OF SURFACE EXCHANGE-REACTIONS USED TO GROW COMPOUND FILMS"",""EFFECT OF GROWTH TEMPERATURE ON THE ELECTRONIC-ENERGY BAND AND CRYSTAL-STRUCTURE OF ZnS THIN-FILMS GROWN USING ATOMIC LAYER EPITAXY"",""ELLIPSOMETRIC STUDIES ON ZINC-SULFIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY"",""Mass spectrometry study of ZnS atomic layer epitaxy process"",""Comparison of ZnS thin films grown by atomic layer epitaxy from zinc acetate and zinc chloride: An X-ray diffraction and spectroscopic ellipsometric study"",""DENSITY OF ZnS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY"",""EMANATION THERMAL-ANALYSIS IN THE CHARACTERIZATION OF ZINC-SULFIDE THIN-FILMS PREPARED FROM DIFFERENT PRECURSORS"",""AFM studies on ZnS thin films grown by atomic layer epitaxy"",""ALE growth of ZnS _ 1-x Se _x thin films by substituting surface sulfur with elemental selenium"",""STRUCTURE, SURFACE MORPHOLOGY AND OPTICAL PROPERTIES OF THIN FILMS OF ZnS AND CdS GROWN BY ATOMIC LAYER EPITAXY"",""Monocrystalline ZnS -sphalerite films grown by atomic layer epitaxy in a gas flow system"",""Zinc sulfide and terbium-doped zinc sulfide films grown by traveling wave reactor atomic layer epitaxy"",""High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition"",""Aging of electroluminescent devices based on ZnS deposited with atomic layer epitaxy from various precursors""]","[[""T. S. Suntola"",""A. J. Pakkala"",""S. G. Lindfors""],[""T. S. Suntola"",""A. J. Pakkala"",""S. G. Lindfors""],[""D. Riihela"",""M. Ritala"",""R. Matero"",""M. Leskela""],[""A. Koukitu"",""T. Miyazawa"",""H. Ikeda"",""H. Seki""],[""N. A. Stepanova"",""V. D. Kupriyanov"",""A. A. Malygin""],[""M. Pessa"",""R. M akel a"",""T. Suntola""],[""J. A. Lahtinen"",""A. Lu"",""T. Tuomi"",""M. Tammenmaa""],[""M. Oikkonen""],[""J. Hyv arinen"",""M. Sonninen"",""R. T ornqvist""],[""M. Oikkonen"",""M. Tammenmaa"",""M. Asplund""],[""M. Oikkonen"",""T. Tuomi"",""M. Luomaj arvi""],[""V. Balek"",""J. Fusek"",""O. K r i z"",""M. Leskel a"",""L. Niinist o"",""E. Nyk anen"",""J. Rautanen"",""P. Soininen""],[""J. Ihanus"",""M. Ritala"",""M. Leskel a"",""T. Prohaska"",""R. Resch"",""G. Friedbacher"",""M. Grasserbauer""],[""J. Ihanus"",""M. Ritala"",""M. Leskel a"",""E. Rauhala""],[""A. Szczerbakow"",""M. Godlewski"",""E. Dynowska"",""V. . Ivanov"",""K. Swi atek"",""E. M. Goldys"",""M. R. Phillips""],[""A. Szczerbakow"",""E. Dynowska"",""M. Godlewski"",""K. Swi atek""],[""S. J. Yun"",""S. Dey"",""K. S. Nam""],[""J. S. King"",""C. W. Neff"",""C. J. Summers"",""W. Park"",""S. Blomquist"",""E. Forsythe"",""D. Morton""],[""Soenen, B"",""Ihanus, J."",""Stuyven, G."",""De Visschere, P."",""Ritala, M."",""Leskela, M.""]]","[null,null,1996,1992,1987,1981,1985,1987,1988,1988,1988,1994,1997,1997,1998,1998,1998,2003,2000]","["""","""",""Thin Solid Films"",""J. Cryst. Growth"",""Neorg. Mater."",""Appl. Phys. Lett."",""J. Appl. Phys."",""J. Appl. Phys."",""J. Cryst. Growth"",""Mater. Res. Bull."",""J. Appl. Phys."",""J. Mater. Res."",""Appl. Surf. Sci."",""Appl. Surf. Sci."",""Acta Phys. Pol. A"",""J. Cryst. Growth"",""J. Korean Phys. Soc."",""Appl. Phys. Lett."",""Journal of the SID, Suppl. 1""]","[""T. S. Suntola, A. J. Pakkala, and S. G. Lindfors, U.S. patent 4,413,022 (1 November, 1983)."",""T. S. Suntola, A. J. Pakkala, and S. G. Lindfors, U.S. patent 4,389,973 (28 June, 1983)."",""D. Riihel€a, M. Ritala, R. Matero, and M. Leskel€a, Thin Solid Films 289, 250 (1996)."",""A. Koukitu, T. Miyazawa, H. Ikeda, and H. Seki, J. Cryst. Growth 123, 95 (1992)."",""N. A. Stepanova, V. D. Kupriyanov, and A. A. Malygin, Neorg. Mater. 23, 377 (1987) [Inorg. Mater. 23, 331 (1987)]."",""M. Pessa, R. M€akel€a, and T. Suntola, Appl. Phys. Lett. 38, 131 (1981)."",""J. A. Lahtinen, A. Lu, T. Tuomi, and M. Tammenmaa, J. Appl. Phys. 58, 1851 (1985)."",""M. Oikkonen, J. Appl. Phys. 62, 1385 (1987)."",""J. Hyv€arinen, M. Sonninen, and R. T€ornqvist, J. Cryst. Growth 86, 695 (1988)."",""M. Oikkonen, M. Tammenmaa, and M. Asplund, Mater. Res. Bull. 23, 133 (1988)."",""M. Oikkonen, T. Tuomi, and M. Luomaj€arvi, J. Appl. Phys. 63, 1070 (1988)."",""V. Balek, J. Fusek, O. K\u0004r\u0003ı\u0004z, M. Leskel€a, L. Niinist€o, E. Nyk€anen, J. Rautanen, and P. Soininen, J. Mater. Res. 9, 119 (1994)."",""J. Ihanus, M. Ritala, M. Leskel€a, T. Prohaska, R. Resch, G. Friedbacher, and M. Grasserbauer, Appl. 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Papers Suppl. 1, 33 (2000).""]" +,,ZnI2,H2S,1305,[1305],"[""""]","[""Aging of electroluminescent devices based on ZnS deposited with atomic layer epitaxy from various precursors""]","[[""Soenen, B"",""Ihanus, J."",""Stuyven, G."",""De Visschere, P."",""Ritala, M."",""Leskela, M.""]]",[2000],"[""Journal of the SID, Suppl. 1""]","[""B. Soenen, J. Ihanus, G. Stuyven, P. De Visschere, M. Ritala, and M. Leskel€a, SID Int. Symp. Digest Tech. Papers Suppl. 1, 33 (2000).""]" +,,ZnMe2,H2S,1156 and 1306–1314,"[1156,1306,1307,1308,1309,1310,1311,1312,1313,1314]","["""","""","""","""","""","""","""","""","""",""""]","[""ZINC OXYSULFIDE THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION"",""Aging of electroluminescent ZnS : Mn thin films deposited by atomic layer deposition processes"",""A NOVEL ATMOSPHERIC-PRESSURE TECHNIQUE FOR THE DEPOSITION OF ZnS BY ATOMIC LAYER EPITAXY USING DIMETHYLZINC"",""COVERAGE OF ROUGH SUBSTRATES BY ZnS USING VACUUM EVAPORATION AND ATOMIC LAYER EPITAXY"",""Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy"",""ATOMIC LAYER EPITAXY OF ZnS BY A NEW GAS SUPPLYING SYSTEM IN LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY"",""Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)- Si Substrate"",""Atomic layer epitaxy of ZnS by low-pressure horizontal metalorganic chemical vapor deposition"",""Growth of ZnSe/ZnS strained-layer superlattice on Si substrates by atomic layer epitaxy"",""Epitaxial growth of II--VI compound semiconductors by atomic layer epitaxy""]","[[""B. 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Sci."",""Journal of the SID, Suppl. 1"",""Nanotechnology""]","[""B. Moghtaderi, I. Shames, and E. Doroodchi, Chem. Eng. Technol. 29, 97 (2006)."",""E. B. Yousfi, T. Asikainen, V. Pietu, P. Cowache, M. Powalla, and D. Lincot, Thin Solid Films 361/362, 183 (2000)."",""C. Platzer-Bj€orkman, T. T€orndahl, D. Abou-Ras, J. Malmstr€om, J. Kessler, and L. Stolt, J. Appl. Phys. 100, 044506 (2006)."",""S. Jeon, S. Bang, S. Lee, S. Kwon, W. Jeong, H. Jeon, H. J. Chang, and H.-H. Park, J. Korean Phys. Soc. 53, 3287 (2008)."",""M. Yokoyama and N.-T. Chen, J. Cryst. Growth 223, 369 (2001)."",""R. A. Bisengaliev, B. V. Novikov, V. B. Aleskovskii, V. E. Drozd, D. A. Ageev, V. I. Gubaidullin, and A. P. Savchenko, Fiz. Tverd. Tela 40, 820 (1998) [Phys. Solid State 40, 754 (1998)]."",""G. Stuyven, P. De Visschere, A. Hikavyy, and K. Neyts, J. Cryst. Growth 234, 690 (2002)."",""Y. S. Kim and S. J. Yun, Appl. Surf. Sci. 229, 105 (2004)."",""E. Soininen, G. H€ark€onen, and K. Vasama, SID Int. Symp. Digest Tech. Papers Suppl. 1, 77 (2000)."",""S. Farhangfar, R. B. Yang, M. Pelletier, and K. Nielsch, Nanotechnology 20, 325602 (2009).""]" +,,ZnEt2,Et2S2,1321,[1321],"[""10.1016/j.tsf.2010.03.074""]","[""Atomic layer deposition of ZnS via in situ production of H2S""]","[[""Bakke, J. R."",""King, J. S."",""Jung, H. J."",""Sinclair, R."",""Bent, S. F.""]]",[2010],"[""Thin Solid Films""]","[""J. R. Bakke, J. S. King, H. J. Jung, R. Sinclair, and S. F. Bent, Thin Solid Films 518, 5400 (2010).""]" +,,Zn(CH3COO)2,H2S,1304,[1304],"[""""]","[""High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition""]","[[""J. S. King"",""C. W. Neff"",""C. J. Summers"",""W. Park"",""S. Blomquist"",""E. Forsythe"",""D. Morton""]]",[2003],"[""Appl. Phys. Lett.""]","[""J. S. King, C. W. Neff, C. J. Summers, W. Park, S. Blomquist, E. Forsythe, and D. Morton, Appl. Phys. Lett. 83, 2566 (2003).""]" +,,Zn(OAc)2,H2S,"680, 1279, 1292, 1293, 1295–1297, 1304, and 1322","[680,1279,1292,1293,1295,1296,1297,1304,1322]","["""","""","""","""","""","""","""","""",""""]","[""AFM studies of polycrystalline calcium sulfide thin films grown by atomic layer deposition"",""Zinc chalcogenide thin films grown by the atomic layer epitaxy technique using zinc acetate as source material"",""CHARACTERIZATION OF SURFACE EXCHANGE-REACTIONS USED TO GROW COMPOUND FILMS"",""EFFECT OF GROWTH TEMPERATURE ON THE ELECTRONIC-ENERGY BAND AND CRYSTAL-STRUCTURE OF ZnS THIN-FILMS GROWN USING ATOMIC LAYER EPITAXY"",""Mass spectrometry study of ZnS atomic layer epitaxy process"",""Comparison of ZnS thin films grown by atomic layer epitaxy from zinc acetate and zinc chloride: An X-ray diffraction and spectroscopic ellipsometric study"",""DENSITY OF ZnS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY"",""High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition"",""Carrier transport properties of iodine-doped (ZnS) _3 (ZnSe) _42 ordered alloys grown by atomic layer epitaxy""]","[[""S. Dey"",""S. J. Yun""],[""M. Tammenmaa"",""T. Koskinen"",""L. Hiltunen"",""L. Niinist o"",""M. Leskel a""],[""M. Pessa"",""R. M akel a"",""T. Suntola""],[""J. A. Lahtinen"",""A. Lu"",""T. Tuomi"",""M. Tammenmaa""],[""J. Hyv arinen"",""M. Sonninen"",""R. T ornqvist""],[""M. Oikkonen"",""M. Tammenmaa"",""M. Asplund""],[""M. Oikkonen"",""T. Tuomi"",""M. Luomaj arvi""],[""J. S. King"",""C. W. Neff"",""C. J. Summers"",""W. Park"",""S. Blomquist"",""E. Forsythe"",""D. Morton""],[""H. Fujiwara"",""H. Kiryu"",""I. Shimizu""]]","[1999,1985,1981,1985,1988,1988,1988,2003,1995]","[""Appl. Surf. Sci."",""Thin Solid Films"",""Appl. Phys. Lett."",""J. Appl. Phys."",""J. Cryst. Growth"",""Mater. Res. Bull."",""J. Appl. Phys."",""Appl. Phys. Lett."",""J. Appl. Phys.""]","[""S. Dey and S. J. Yun, Appl. Surf. Sci. 143, 191 (1999)."",""M. Tammenmaa, T. Koskinen, L. Hiltunen, L. Niinist€o, and M. Leskel€a, Thin Solid Films 124, 125 (1985)."",""M. Pessa, R. M€akel€a, and T. Suntola, Appl. Phys. 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Sci. 143, 191 (1999).""]" +,ZnSe,Zn,Se,"1150, 1287, and 1323–1339","[1150,1287,1323,1324,1325,1326,1327,1328,1329,1330,1331,1332,1333,1334,1335,1336,1337,1338,1339]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy"","""",""X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy"",""Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100) GaAs"",""Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy"",""The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100) GaAs Substrates"",""Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy"",""Dynamic Reflection High-Energy Electron Diffraction Observations of the Atomic Layer Epitaxy Growth of Zn Chalcogenides"",""Atomic layer epitaxy of ZnSe--ZnTe strained layer superlattices"",""ATOMIC LAYER EPITAXY OF NITROGEN-DOPED ZnSe"",""SELF-LIMITING GROWTH OF ZINC CHALCOGENIDES AND THEIR SUPERLATTICES"",""ATOMIC LAYER EPITAXY OF ZnSe USING REFLECTANCE DIFFERENCE SPECTROSCOPY"",""Polycrystalline Cu(InGa)Se _2 thin-film solar cells with ZnSe buffer layers"",""Photoluminescence and cathodoluminescence studies of ZnSe quantum structures embedded in ZnS"",""Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system"",""Structure and composition of the ZnSe (001) surface during atomic-layer epitaxy"",""Atomic layer epitaxy processes of ZnSe on GaAs (001) as observed by beam-rocking reflection high-energy electron diffraction ( RHEED ) and total-reflection-angle X-ray spectroscopy ( TRAXS )"",""Atomic layer deposition of thin films of ZnSe ---structural and optical characterization"",""Optical characterization of CdTe/ZnSe fractional monolayer, structures grown by atomic layer epitaxy""]","[[""K. Kopalko"",""M. Godlewski"",""E. Guziewicz"",""E. usakowska"",""W. Paszkowicz"",""J. Domaga a"",""E. Dynowska"",""A. Szczerbakow"",""A. W ojcik"",""M. R. Phillips""],[""T. Suntola"",""J. Antson""],[""M. Oikkonen"",""M. Blomberg"",""T. Tuomi"",""M. Tammenmaa""],[""T. Yao"",""T. Takeda""],[""T. Yao"",""T. Takeda"",""R. Watanuki""],[""T. Yao""],[""T. Takeda"",""T. Kurosu"",""M. Lida"",""T. Yao""],[""T. Yao""],[""S. Dosho"",""Y. Takemura"",""M. Konagai"",""K. Takahashi""],[""Y. Takemura"",""M. Konagai"",""K. Yamasaki"",""C. H. Lee"",""K. Takahashi""],[""M. Konagai"",""Y. Takemura"",""K. Yamasaki"",""K. Takahashi""],[""H. Akinaga"",""K. Tanaka""],[""Y. Ohtake"",""K. Kushiya"",""M. Ichikawa"",""A. Yamada"",""M. Konagai""],[""K. Arai"",""Z. Q. Zhu"",""T. Sekiguchi"",""T. Yasuda"",""F. Lu"",""N. Kuroda"",""Y. Segawa"",""T. Yao""],[""A. Szczerbakow"",""E. Dynowska"",""K. Swi atek"",""M. Godlewski""],[""A. Ohtake"",""T. Hanada"",""T. Yasuda"",""K. Arai"",""T. Yao""],[""A. Ohtake"",""T. Hanada"",""K. Arai"",""T. Komura"",""S. Miwa"",""K. Kimura"",""T. Yasuda"",""C. Jin"",""T. Yao""],[""E. Guziewicz"",""M. Godlewski"",""K. Kopalko"",""E. usakowska"",""E. Dynowska"",""M. Guziewicz"",""M. M. Godlewski"",""M. Phillips""],[""J. Y. Lee"",""J. H. Chang"",""M. Yang"",""H. S. Ahn"",""S. N. Yi"",""K. Goto"",""K. Godo"",""H. Makino"",""M. Cho"",""T. Yao"",""J. S. Song""]]","[2004,null,1985,1986,1986,1986,1996,1986,1989,1993,1993,1994,1995,1998,1999,1999,1999,2004,2004]","[""Vacuum"","""",""Thin Solid Films"",""Appl. Phys. Lett."",""Appl. Phys. Lett."",""Jpn. J. Appl. Phys., Part 2"",""Surf. Sci."",""Jpn. J. Appl. Phys., Part 2"",""J. Cryst. Growth"",""J. Electron. Mater."",""Thin Solid Films"",""Appl. Surf. Sci."",""Jpn. J. Appl. Phys., Part 1"",""J. Cryst. Growth"",""J. Cryst. Growth"",""Phys. Rev. B"",""J. Cryst. Growth"",""Thin Solid Films"",""Curr. Appl. Phys.""]","[""K. Kopalko, M. Godlewski, E. Guziewicz, E. Łusakowska, W. Paszkowicz, J. Domagała, E. Dynowska, A. 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Phys. 4, 611 (2004).""]" +,,Zn,H2Se,1340,[1340],"[""10.1063/1.3374706""]","[""Growth of ZnSe(1-x)Tex epilayers by isothermal closed space sublimation""]","[[""Larramendi, Erick M."",""Gutierrez Z-B, Karla"",""Arens, Christof"",""Woggon, Ulrike"",""Schikora, Detlef"",""Lischka, Klaus""]]",[2010],"[""J. Appl. Phys.""]","[""E. M. Larramendi, Z. -B. K. Gutierrez, C. Arens, U. Woggon, D. Schikora, and K. Lischka, J. Appl. Phys. 107, 103510 (2010).""]" +,,Zn,Et2Se,1341,[1341],"[""""]","[""Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H _2 Se""]","[[""A. Koukitu"",""A. Saegusa"",""M. Kitho"",""H. Ikeda"",""H. Seki""]]",[1992],"[""Jpn. J. Appl. Phys., Part 2""]","[""A. Koukitu, A. Saegusa, M. Kitho, H. Ikeda, and H. Seki, Jpn. J. Appl. Phys., Part 2 31, L2165 (1992).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_013_table_008/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_013_table_008/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..5c80135ce1b354bd708faf2fefc1524b56c65322 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_013_table_008/gold.csv @@ -0,0 +1,54 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,ZnCl2,H2Se,1342–1344,"[1342,1343,1344]","["""","""",""""]","[""ATOMIC LAYER EPITAXY OF ZnSe ON GaAs (100) BY METALORGANIC MOLECULAR-BEAM EPITAXY"",""GROWTH OF ZnSe ON (100) GaAs BY ATOMIC LAYER EPITAXY"",""STRUCTURAL-PROPERTIES OF ZnSe ON GaAs GROWN BY ATOMIC LAYER EPITAXY""]","[[""R. Kimura"",""M. Konagai"",""K. Takahashi""],[""C. D. Lee"",""B. H. Lim"",""C. Lim"",""H. L. Park"",""C. H. Chung"",""S. K. Chang""],[""C. D. Lee"",""B. K. Kim"",""J. W. Kim"",""S. K. Chang"",""S. H. Suh""]]","[1992,1992,1994]","[""J. Cryst. Growth"",""J. Cryst. Growth"",""J. Appl. Phys.""]","[""R. Kimura, M. Konagai, and K. Takahashi, J. Cryst. Growth 116, 283 (1992)."",""C. D. Lee, B. H. Lim, C. Lim, H. L. Park, C. H. Chung, and S. K. Chang, J. Cryst. Growth 117, 148 (1992)."",""C. D. Lee, B. K. Kim, J. W. Kim, S. K. Chang, and S. H. Suh, J. Appl. Phys. 76, 928 (1994).""]" +,,ZnCl2,(Et3Si)2Se,1148,[1148],"[""10.1021/ja8090388""]","[""Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium""]","[[""Pore, Viljami"",""Hatanp a a, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2009],"[""J. Am. Chem. Soc.""]","[""V. Pore, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, J. Am. Chem. Soc. 131, 3478 (2009).""]" +,,ZnMe2,H2Se,1312–1314 and 1345–1355,"[1312,1313,1314,1345,1346,1347,1348,1349,1350,1351,1352,1353,1354,1355]","["""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""Atomic layer epitaxy of ZnS by low-pressure horizontal metalorganic chemical vapor deposition"",""Growth of ZnSe/ZnS strained-layer superlattice on Si substrates by atomic layer epitaxy"",""Epitaxial growth of II--VI compound semiconductors by atomic layer epitaxy"",""Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy"",""\""MBE-Like\"" and \""CVD-like\"" atomic layer epitaxy of ZnSe in MOMBE system"",""Surface reaction mechanism in MOMBE--ALE of ZnSe and CdSe as determined by a new in-situ optical probing method"",""ATOMIC LAYER EPITAXIAL-GROWTH STUDIES OF ZnSe USING DIMETHYLZINC AND HYDROGEN SELENIDE"",""ZnSe EPILAYERS GROWN BY METALORGANIC ATOMIC LAYER EPITAXY"",""High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy"",""Atomic Layer Epitaxy Growth of ZnSe on (100) GaAs Using Metalorganic Vapor-Phase Epitaxy System"",""Variation with composition of the properties in ZnS _x Se _ 1-x"",""The properties of ZnSe layers grown on GaAs and Si substrates by atomic layer epitaxy"",""Growth of ZnS _x Se _ 1-x layers on Si substrates by atomic layer epitaxy"",""Growth and characterization of ZnSe on Si by atomic layer epitaxy""]","[[""C. H. Liu"",""M. Yokoyama"",""Y. K. Su"",""N. C. Lee""],[""C.-T. Hsu"",""M. Yokoyama"",""Y. K. Su""],[""C. T. Hsu""],[""C. D. Lee"",""B. K. Kim"",""J. W. Kim"",""H. L. Park"",""C. H. Chung"",""S. K. Chang"",""J. I. Lee"",""S. K. Noh""],[""A. Yoshikawa"",""T. Okamoto"",""H. Yasuda"",""S. Yamaga"",""H. Kasai""],[""A. Yoshikawa"",""M. Kobayashi"",""S. Tokita""],[""I. Bhat"",""S. Akram""],[""C. D. Lee"",""S. I. Min"",""S. K. Chang""],[""C. D. Lee"",""S. I. Min"",""S. K. Chang""],[""C.-T. Hsu""],[""C.-T. Hsu""],[""C.-T. Hsu""],[""C. T. Hsu""],[""M. Yokoyama"",""N. T. Chen"",""H. Y. Ueng""]]","[1996,1997,1998,1994,1990,1994,1994,1995,1996,1996,1998,1998,1999,2000]","[""Jpn. J. Appl. Phys., Part 1"",""Mater. Chem. Phys."",""Thin Solid Films"",""J. Cryst. Growth"",""J. Cryst. Growth"",""Appl. Surf. Sci."",""J. Cryst. Growth"",""J. Korean Phys. Soc."",""J. Cryst. Growth"",""Jpn. J. Appl. Phys., Part 1"",""J. Cryst. Growth"",""Mater. Chem. Phys."",""Mater. Chem. Phys."",""J. Cryst. 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Chen, and H. Y. Ueng, J. Cryst. Growth 212, 97 (2000).""]" +,,ZnEt2,H2Se,1356,[1356],"[""""]","[""Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski�Krastanov mode""]","[[""Y. G. Kim"",""Y. S. Joh"",""J. H. Song"",""K. S. Baek"",""S. K. Chang"",""E. D. Sim""]]",[2003],"[""Appl. Phys. Lett.""]","[""Y. G. Kim, Y. S. Joh, J. H. Song, K. S. Baek, S. K. Chang, and E. D. Sim, Appl. Phys. Lett. 83, 2656 (2003).""]" +,,ZnEt2,Et2Se2,1321,[1321],"[""10.1016/j.tsf.2010.03.074""]","[""Atomic layer deposition of ZnS via in situ production of H2S""]","[[""Bakke, J. R."",""King, J. S."",""Jung, H. J."",""Sinclair, R."",""Bent, S. F.""]]",[2010],"[""Thin Solid Films""]","[""J. R. Bakke, J. S. King, H. J. Jung, R. Sinclair, and S. F. Bent, Thin Solid Films 518, 5400 (2010).""]" +,,Zn[N(SiMe3)2]2,H2Se,1356,[1356],"[""""]","[""Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski�Krastanov mode""]","[[""Y. G. Kim"",""Y. S. Joh"",""J. H. Song"",""K. S. Baek"",""S. K. Chang"",""E. D. Sim""]]",[2003],"[""Appl. Phys. Lett.""]","[""Y. G. Kim, Y. S. Joh, J. H. Song, K. S. Baek, S. K. Chang, and E. D. Sim, Appl. Phys. Lett. 83, 2656 (2003).""]" +,ZnTe,Zn,Te,"1044, 1323, 1326–1328, 1330, and 1357–1366","[1044,1323,1326,1327,1328,1330,1357,1358,1359,1360,1361,1362,1363,1364,1365,1366]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1016/j.jcrysgro.2007.06.030""]","[""ATOMIC LAYER EPITAXY OF CdTe-ZnTe AND CdTe-MnTe SUPERLATTICES"",""X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy"",""The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100) GaAs Substrates"",""Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy"",""Dynamic Reflection High-Energy Electron Diffraction Observations of the Atomic Layer Epitaxy Growth of Zn Chalcogenides"",""ATOMIC LAYER EPITAXY OF NITROGEN-DOPED ZnSe"",""EVALUATION OF Zn(N[Si(CH3) _3 ] _2 ) _2 AS A P-TYPE DOPANT IN OMVPE GROWTH OF ZnSe"",""A study of ZnTe films grown on glass substrates using an atomic layer evaporation method"",""SELF-LIMITING GROWTH IN ATOMIC LAYER EPITAXY OF ZnTe"",""SELF-LIMITING GROWTH WITH 0.5 MONOLAYER PER CYCLE IN ATOMIC LAYER EPITAXY OF ZnTe"",""GROWTH AND CHARACTERIZATION OF CdTe -- ZnTe SHORT-PERIOD SUPERLATTICES"",""Surface stoichiometry determination using reflection high-energy electron diffraction and atomic-layer epitaxy: The case of ZnTe (100)"",""Reflection mass spectrometry studies on UHV ALE of Cd _ 1-x Zn _x Te ( 0 x 1 ) compounds"",""Atomic layer epitaxy of ZnTe by isothermal closed space sublimation"",""Interaction between Zn and Cd atoms during the atomic layer epitaxy growth of CdZnTe/ZnTe quantum wells"",""Structure and growth rate of ZnTe films grown by isothermal closed space sublimation""]","[[""W. Faschinger"",""F. Hauzenberger"",""P. Juza"",""A. Pesek"",""H. Sitter""],[""M. Oikkonen"",""M. Blomberg"",""T. Tuomi"",""M. Tammenmaa""],[""T. Yao""],[""T. Takeda"",""T. Kurosu"",""M. Lida"",""T. Yao""],[""T. Yao""],[""Y. Takemura"",""M. Konagai"",""K. Yamasaki"",""C. H. Lee"",""K. Takahashi""],[""W. S. Rees"",""D. M. Green"",""T. J. Anderson"",""E. Bretschneider"",""B. Pathangey"",""C. Park"",""J. Kim""],[""M. Ahonen"",""M. Pessa"",""T. Suntola""],[""Y. Takemura"",""H. Nakanishi"",""M. Konagai"",""K. Takahashi""],[""Y. Takemura"",""M. Konagai"",""H. Nakanishi"",""K. Takahashi""],[""F. Hauzenberger"",""W. Faschinger"",""P. Juza"",""A. Pesek"",""K. Lischka"",""H. Sitter""],[""B. Daudin"",""S. Tatarenko"",""D. Brun-Le Cunff""],[""J. T. Sadowski"",""M. A. Herman""],[""E. M. Larramendi"",""E. Pur on"",""L. C. Hern andez"",""M. S anchez"",""S. De Roux"",""O. de Melo"",""G. Romero-Paredes"",""R. Pe na-Sierra"",""M. Tamura""],[""E. M. Larramendi"",""E. L opez-Luna"",""O. De Melo"",""I. Hern andez-Calder on""],[""de Melo, O."",""Larramendi, E. M."",""Duart, J. M. Martinez"",""Velez, M. Hernandez"",""Stangl, J."",""Sitter, H.""]]","[1993,1985,1986,1996,1986,1993,1992,1980,1991,1992,1993,1995,1997,2001,2002,2007]","[""J. Electron. Mater."",""Thin Solid Films"",""Jpn. J. Appl. Phys., Part 2"",""Surf. Sci."",""Jpn. J. Appl. Phys., Part 2"",""J. Electron. Mater."",""J. Electron. Mater."",""Thin Solid Films"",""Jpn. J. Appl. Phys."",""J. Cryst. Growth"",""Thin Solid Films"",""Phys. Rev. B"",""Appl. Surf. Sci."",""J. Cryst. Growth"",""Surf. Rev. Lett."",""J. Cryst. Growth""]","[""W. Faschinger, F. Hauzenberger, P. Juza, A. Pesek, and H. Sitter, J. Electron. Mater. 22, 497 (1993)."",""M. Oikkonen, M. Blomberg, T. Tuomi, and M. Tammenmaa, Thin Solid Films 124, 317 (1985)."",""T. Yao, Jpn. J. Appl. Phys., Part 2 25, L544 (1986)."",""T. Takeda, T. Kurosu, M. Lida, and T. Yao, Surf. Sci. 174, 548 (1996)."",""T. Yao, Jpn. J. Appl. Phys., Part 2 25, L942 (1986)."",""Y. Takemura, M. Konagai, K. Yamasaki, C. H. Lee, and K. Takahashi, J. Electron. Mater. 22, 437 (1993)."",""W. S. Rees, D. M. Green, T. J. Anderson, E. Bretschneider, B. Pathangey, C. Park, and J. Kim, J. Electron. Mater. 21, 361 (1992)."",""M. Ahonen, M. Pessa, and T. Suntola, Thin Solid Films 65, 301 (1980)."",""Y. Takemura, H. Nakanishi, M. Konagai, and K. Takahashi, Jpn. J. Appl. Phys., Part 2 30, L246 (1991)."",""Y. Takemura, M. Konagai, H. Nakanishi, and K. Takahashi, J. Cryst. Growth 117, 144 (1992)."",""F. Hauzenberger, W. Faschinger, P. Juza, A. Pesek, K. Lischka, and H. Sitter, Thin Solid Films 225, 265 (1993)."",""B. Daudin, S. Tatarenko, and D. Brun-Le Cunff, Phys. Rev. B 52, 7822 (1995)."",""J. T. Sadowski and M. A. Herman, Appl. Surf. Sci. 112, 148 (1997)."",""E. M. Larramendi, E. Pur\u0003on, L. C. Hern\u0003andez, M. S\u0003anchez, S. De Roux, O. de Melo, G. Romero-Paredes, R. Pe~na-Sierra, and M. Tamura, J. Cryst. Growth 223, 447 (2001)."",""E. M. Larramendi, E. L\u0003opez-Luna, O. De Melo, and I. Hern\u0003andez- Calder\u0003on, Surf. Rev. Lett. 9, 1725 (2002)."",""O. de Melo, E. M. Larramendi, J. M. M. Duart, M. H. Velez, J. Stangl, and H. Sitter, J. Cryst. Growth 307, 253 (2007).""]" +,,ZnCl2,(Et3Si)2Te,1148,[1148],"[""10.1021/ja8090388""]","[""Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium""]","[[""Pore, Viljami"",""Hatanp a a, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2009],"[""J. Am. Chem. Soc.""]","[""V. Pore, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, J. Am. Chem. Soc. 131, 3478 (2009).""]" +,,ZnMe2,Et2Te,1367,[1367],"[""""]","[""Atomic layer deposition of multilayer ZnTe/CdTe nanostructures""]","[[""Ezhovskii, Y. K."",""Pavlov, D. V.""]]",[2007],"[""Inorg. Mater.""]","[""Y. K. Ezhovskii and D. V. Pavlov, Inorg. Mater. 43, 692 (2007).""]" +,,ZnMe2,MeAyTe,1367,[1367],"[""""]","[""Atomic layer deposition of multilayer ZnTe/CdTe nanostructures""]","[[""Ezhovskii, Y. K."",""Pavlov, D. V.""]]",[2007],"[""Inorg. Mater.""]","[""Y. K. Ezhovskii and D. V. Pavlov, Inorg. Mater. 43, 692 (2007).""]" +31,Gallium,,,,[],[],[],[],[],[],[] +,Ga2O3,Ga(acac)3,O3,1368 and 1369,"[1368,1369]","["""",""""]","[""IMPROVED CdTe LAYERS ON GaAs AND Si USING ATOMIC LAYER EPITAXY"",""Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy""]","[[""W.-S. Wang"",""H. Ehsani"",""I. Bhat""],[""M. Nieminen"",""L. Niinisto"",""E. Rauhala""]]","[1993,1996]","[""J. Electron. Mater."",""J. Mater. Chem.""]","[""W.-S. Wang, H. Ehsani, and I. Bhat, J. Electron. Mater. 22, 873 (1993)."",""M. Nieminen, L. Niinist€o, and E. Rauhala, J. Mater. Chem. 6, 27 (1996).""]" +,,Ga(acac)3,H2O,1368,[1368],"[""""]","[""IMPROVED CdTe LAYERS ON GaAs AND Si USING ATOMIC LAYER EPITAXY""]","[[""W.-S. Wang"",""H. Ehsani"",""I. Bhat""]]",[1993],"[""J. Electron. Mater.""]","[""W.-S. Wang, H. Ehsani, and I. Bhat, J. Electron. Mater. 22, 873 (1993).""]" +,,[GaMe2NH2]3,O2⚡,1370–1372,"[1370,1371,1372]","["""","""",""""]","[""Porous silicon host matrix for deposition by atomic layer epitaxy"",""Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition"",""Plasma-enhanced atomic layer deposition of ultrathin Ga2O3-TiO2 gate dielectrics on Si(001) substrates""]","[[""M. Utriainen"",""S. Lehto"",""L. Niinist o"",""Cs. Ducso"",""N. Q. Khanh"",""Z. E. Horv ath"",""I. B arsony"",""B. P ecz""],[""Shan, F. K."",""Liu, G. X."",""Lee, W. J."",""Lee, G. H."",""Kim, I. S."",""Shin, B. C.""],[""Seong, N. J."",""Kim, E. T."",""Yoon, S. G.""]]","[1997,2005,2005]","[""Thin Solid Films"",""J. Appl. Phys."",""Integr. Ferroelectr.""]","[""M. Utriainen, S. Lehto, L. Niinist€o, C. D€ucso, N. Q. Khanh, Z. E. Horv\u0003ath, I. B\u0003arsony, and B. P\u0003ecz, Thin Solid Films 297, 39 (1997)."",""F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. 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Growth 146, 467 (1995).""]" +,,GaCl3,AsH3,"506, 507, and 1411–1415","[506,507,1411,1412,1413,1414,1415]","["""","""","""","""","""","""",""""]","[""Atomic layer epitaxy of AlP and (AlP) _n (GaP) _n superlattice using ethyldimethylamine alane as a new aluminum source"",""LOW-TEMPERATURE GROWTH OF GaAs AND AlAs BY DIRECT REACTION BETWEEN GaCl _3 , AlCl _3 AND AsH _3"",""In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy"",""GROWTH OF GAAS AND INAS BY ATOMIC LAYER EPITAXY USING Ga AND In CHLORIDES AND AsH _3"",""Atomic Layer Epitaxy of GaAs Using GaCl _3 and AsH _3"",""EPITAXIAL-GROWTH OF GaAs AT ONE TO 2 MONOLAYERS PER CYCLE BY ALTERNATE SUPPLY OF GaCl _3 AND AsH _3"",""ROLE OF HYDROGEN IN ATOMIC LAYER EPITAXY OF GaAs USING GaCl _3""]","[[""S. Hirose"",""M. Yamaura"",""H. Munekata""],[""R. Kobayashi""],[""A. Koukitu"",""N. Takahashi"",""H. Seki""],[""H. P. Kattelus"",""J. Ahopelto"",""I. Suni""],[""Y. Jin"",""R. Kobayashi"",""K. Fujii"",""F. 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Phys., Part 2 31, L1730 (1992).""]" +,,GaCl3,As,1414,[1414],"[""""]","[""EPITAXIAL-GROWTH OF GaAs AT ONE TO 2 MONOLAYERS PER CYCLE BY ALTERNATE SUPPLY OF GaCl _3 AND AsH _3""]","[[""K. Ishikawa"",""R. Kobayashi"",""S. Narahara"",""F. Hasegawa""]]",[1992],"[""Jpn. J. Appl. Phys., Part 1""]","[""K. Ishikawa, R. Kobayashi, S. Narahara, and F. Hasegawa, Jpn. J. Appl. Phys., Part 1 31, 1716 (1992).""]" +,,GaBr,AsH3,1416,[1416],"[""""]","[""INSITU OBSERVATION OF ATOMIC LAYER EPITAXY OF GaAs USING GaCl _3 BY SURFACE PHOTOABSORPTION METHOD""]","[[""R. Kobayashi"",""S. Narahara"",""K. Ishikawa"",""F. Hasegawa""]]",[1993],"[""Jpn. J. Appl. Phys., Part 2""]","[""R. Kobayashi, S. Narahara, K. Ishikawa, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 32, L164 (1993).""]" +,,GaI,AsH3,1416,[1416],"[""""]","[""INSITU OBSERVATION OF ATOMIC LAYER EPITAXY OF GaAs USING GaCl _3 BY SURFACE PHOTOABSORPTION METHOD""]","[[""R. Kobayashi"",""S. Narahara"",""K. Ishikawa"",""F. Hasegawa""]]",[1993],"[""Jpn. J. Appl. Phys., Part 2""]","[""R. Kobayashi, S. Narahara, K. Ishikawa, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 32, L164 (1993).""]" +,,GaMe3,AsH3,"508–511, 514, 516, 518, 521, 524, 1390, 1393, and 1417–1467","[508,509,510,511,514,516,518,521,524,1390,1393,1417,1418,1419,1420,1421,1422,1423,1424,1425,1426,1427,1428,1429,1430,1431,1432,1433,1434,1435,1436,1437,1438,1439,1440,1441,1442,1443,1444,1445,1446,1447,1448,1449,1450,1451,1452,1453,1454,1455,1456,1457,1458,1459,1460,1461,1462,1463,1464,1465,1466,1467]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""OPTICAL IN-SITU ANALYSIS OF GaAs / AlAs / GaAs AND GaAs /( Al ) GaAs / GaAs ATOMIC LAYER GROWTH USING GaCl _3 , AlCl _3 AND AsH _3"",""ATOMIC LAYER EPITAXY OF III -- V binary compounds"",""KINETIC PROCESSES IN ATOMIC-LAYER EPITAXY OF GaAs AND AlAs USING A PULSED VAPOR-PHASE METHOD"",""Atomic layer epitaxy for the growth of heterostructure devices"",""A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxy"",""Atomic layer epitaxy of AlAs using thermally decomposed gas molecules"",""Atomic layer epitaxy of AlAs : growth mechanism"",""Atomic layer epitaxy of AlAs and (AlAs) _n (GaAs) _s"",""Lattice contraction and electrical conduction of heavily carbon doped AlAs layers grown by atomic layer epitaxy"",""Atomic layer epitaxy of GaInP ordered alloy"",""Low temperature growth of AlGaP and GaP on Si substrates by atomic layer epitaxy"",""Atomic layer epitaxy of GaAs using GaBr and GaI sources"",""MOLECULAR LAYER EPITAXY"",""Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy"",""Growth and characterization of compound semiconductors by atomic layer epitaxy"",""Self-limiting mechanism in the atomic layer epitaxy of GaAs"",""Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy"",""GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy"",""New approach to the atomic layer epitaxy of GaAs using a fast gas stream"",""CARBON INCORPORATION IN GaAs LAYER GROWN BY ATOMIC LAYER EPITAXY"",""Sidewall growth by atomic layer epitaxy"",""INITIAL-STAGES OF GaAs AND AlAs GROWTH ON Si SUBSTRATES - ATOMIC-LAYER EPITAXY"",""In situ X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GaAs GROWN BY ATOMIC LAYER EPITAXY"",""THE ROLE OF SURFACE AND GAS-PHASE REACTIONS IN ATOMIC LAYER EPITAXY"",""Atomic layer epitaxy of device quality GaAs"",""GaAs ATOMIC LAYER EPITAXY USING THE KrF EXCIMER LASER"",""The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine"",""Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)"",""DIRECT OBSERVATION OF GaAs ATOMIC LAYER EPITAXY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION"",""RHEED AND XPS OBSERVATIONS OF TRIMETHYLGALLIUM ADSORPTION ON GaAs (001) SURFACES - RELEVANCE TO ATOMIC LAYER EPITAXY"",""Atomic layer epitaxy of planar-doped structures for nonalloyed contacts and field-effect transistor"",""INSITU X -RAY PHOTOEMISSION SPECTROSCOPY FOR ATOMIC LAYER EPITAXY OF InP AND GaAs"",""Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy"",""Atomic layer epitaxy of GaAs by chemical beam epitaxy"",""Control of GaAs on Si Interface Using Atomic Layer Epitaxy"",""THE MECHANISM OF ATOMIC LAYER EPITAXY OF GAAS USING TRIMETHYLGALLIUM AND ARSINE"",""Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen"",""ATOMIC LAYER EPITAXY OF Al _x Ga _ 1-x As AND DEVICE QUALITY GaAs"",""ATOMIC LAYER EPITAXY OF GaAs USING nitrogen CARRIER GAS"",""ATOMIC LAYER EPITAXY OF GaAs USING N _2 CARRIER GAS"",""Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs"",""Trimethylgallium Reactions on As -Stabilized and Ga -Stabilized GaAs (100) Surfaces"",""Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing"",""Atomic layer epitaxy on (001) GaAs : real-time spectroscopy"",""INSITU MONITORING AND CONTROL OF ATOMIC LAYER EPITAXY BY SURFACE PHOTOABSORPTION"",""Mechanisms of atomic layer epitaxy of GaAs"",""A model for the atomic layer epitaxy of GaAs"",""The surface chemistry and kinetics of GaAs atomic layer epitaxy"",""THE IMPACT OF SHORT EXPOSURE TIMES ON THE ALE SELF-LIMITING PROCESS - POTENTIAL MECHANISMS"",""Atomic layer epitaxy of GaAs with a 2 m/h growth rate"",""GaAs/AlGaAs atomic layer epitaxy in a commercial MOCVD reactor"",""SURFACE-REACTION MECHANISMS IN GaAs ATOMIC LAYER EPITAXY"",""CRYSTALLOGRAPHIC SELECTIVE GROWTH OF GaAs BY ATOMIC LAYER EPITAXY"",""ADJUSTING TRIMETHYLGALLIUM INJECTION TIME TO EXPLORE ATOMIC LAYER EPITAXY OF GAAS BETWEEN 425-DEGREES-C AND 500-DEGREES-C BY ORGANOMETALLIC VAPOR-PHASE EPITAXY"",""ATOMIC-FORCE MICROSCOPY STUDY OF SURFACE-MORPHOLOGY OF GaAs GROWN BY ATOMIC LAYER EPITAXY USING TRIMETHYLGALLIUM AND ARSINE"",""GROWTH-PROCESSES OF GaAs GROWN BY ATOMIC LAYER EPITAXY REVEALED BY ATOMIC-FORCE MICROSCOPY"",""Reaction mechanisms of mono-molecular layer growth using chemical adsorption"",""Self limiting growth on nominally oriented (111) A GaAs substrates in atomic layer epitaxy"",""Atomic layer epitaxy of GaAs and GaAs _x P _ 1-x on nominally oriented GaAs (111) substrates with high quality surface and interfaces"",""Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors"",""Surface smoothing of GaAs microstructure by atomic layer epitaxy"",""Nucleation and surface roughness in self-limiting monolayer epitaxy of GaAs""]","[[""M. Akamatsu"",""S. Narahara"",""T. Kobayashi"",""F. Hasegawa""],[""S. M. Bedair"",""M. A. Tischler"",""T. Katsuyama"",""N. A. El-Masry""],[""M. Ozeki"",""K. Mochizuki"",""N. Ohtsuka"",""K. Kodama""],[""S. P. DenBaars"",""P. D. Dapkus"",""C. A. Beyler"",""A. Hariz"",""K. M. Dzurko""],[""N. Ohtsuka"",""K. Kitahara"",""M. Ozeki"",""K. Kodama""],[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""],[""M. Ozeki"",""N. Ohtsuka""],[""M. Ishizaki"",""N. Kano"",""J. Yoshino"",""H. Kukimoto""],[""S. Hirose"",""H. Ibuka"",""A. Yoshida"",""N. Kano"",""K. Hara"",""H. Munekata"",""H. Kukimoto""],[""B. T. McDermott"",""K. G. Reid"",""N. A. El-Masry"",""S. M. Bedair"",""W. M. Duncan"",""X. Yin"",""Fred H. Pollak""],[""J. R. Gong"",""S. Nakamura"",""M. Leonard"",""S. M. Bedair"",""N. A. El-Masry""],[""T. Taki"",""A. Koukitu""],[""J. Nishizawa"",""H. Abe"",""T. Kurabayashi""],[""A. Doi"",""Y. Aoyagi"",""S. Namba""],[""M. A. Tischler"",""S. M. Bedair""],[""M. A. Tischler"",""S. M. Bedair""],[""M. A. Tischler"",""N. G. Anderson"",""S. M. Bedair""],[""S. P. DenBaars"",""C. A. Beyler"",""A. Hariz"",""P. D. Dapkus""],[""M. Ozeki"",""K. Mochizuki"",""N. Ohtsuka"",""K. Kodama""],[""K. Mochizuki"",""M. Ozeki"",""K. Kodama"",""N. Ohtsuka""],[""Y. Ide"",""B. T. McDermott"",""M. Hashemi"",""S. M. Bedair"",""W. D. Goodhue""],[""K. Kitahara"",""N. Ohtsuka"",""M. Ozeki""],[""K. Kodama"",""M. Ozeki"",""K. Mochizuki"",""N. Ohtsuka""],[""P. D. Dapkus"",""S. P. DenBaars"",""Q. Chen"",""W. G. Jeong"",""B. Y. Maa""],[""E. Colas"",""R. Bhat"",""B. J. Skromme"",""G. C. Nihous""],[""Y. Kawakyu"",""H. Ishikawa"",""M. Sasaki"",""M. Mashita""],[""A. Watanabe"",""T. Isu"",""M. Hata"",""T. Kamijoh"",""Y. Katayama""],[""M. L. Yu"",""U. Memmert"",""T. F. Kuech""],[""T. H. Chiu""],[""B. Y. Maa"",""P. D. Dapkus""],[""M. Hashemi"",""J. Ramdani"",""B. T. McDermott"",""K. Reid"",""S. M. Bedair""],[""K. Kodama"",""M. Ozeki"",""Y. Sakuma"",""K. Mochizuki"",""N. Ohtsuka""],[""J. R. Creighton"",""K. R. Lykke"",""V. A. Shamamian"",""B. D. Kay""],[""T. H. Chiu"",""J. E. Cunningham"",""Robertson, Jr., A."",""D. L. Malm""],[""K. Kitahara"",""N. Ohtsuka"",""O. Ueda"",""M. Funagura"",""M. Ozeki""],[""A. Watanabe"",""T. Kamijoh"",""M. Hata"",""T. Isu"",""Y. Katayama""],[""M. de Keijser"",""C. van Opdorp""],[""J. R. Gong"",""P. S. Colter"",""D. Jung"",""S. A. Hussien"",""C. A. Parker"",""A. Dip"",""F. Huyga"",""W. M. Duncam"",""S. M. Bedair""],[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""],[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""],[""K. G. Reid"",""H. M. Urdianyk"",""S. M. Bedair""],[""M. Sasaki"",""Y. Kawakyu"",""H. Ishikawa"",""M. Mashita""],[""J. P. Simko"",""T. Meguro"",""S. Iwai"",""K. Ozasa"",""A. Hirata"",""Y. Aoyagi"",""T. Sugano""],[""D. E. Aspnes"",""I. Kamiya"",""R. Bhat""],[""N. Kobayashi"",""Y. Kobayashi""],[""M. L. Yu""],[""M. L. Yu""],[""J. R. Creighton"",""B. A. Bansenauer""],[""K. G. Reid"",""A. F. Myers"",""N. A. El-Masry"",""S. M. Bedair""],[""A. Dip"",""G. M. Eldallal"",""P. C. Colter"",""N. Hayafuji"",""S. M. Bedair""],[""H. Liu"",""P. A. Zawadzki"",""P. E. Norris""],[""M. Mashita"",""M. Sasaki"",""Y. Kawakyu"",""H. Ishikawa""],[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano"",""S. Iwai"",""T. Meguro""],[""C. A. Wang"",""D. M. Tracy""],[""S. J. Park"",""J. S. Ha"",""J. R. Ro"",""J. K. Sim"",""E. H. Lee"",""C. Jeon""],[""H. Yokoyama"",""M. Tanimoto"",""M. Shinohara"",""N. Inoue""],[""J. Nishizawa"",""T. Kurabayashi""],[""J.-S. Lee"",""S. Iwai"",""H. Isshiki"",""T. Meguro"",""T. Sugano"",""Y. Aoyagi""],[""J.-S. Lee"",""S. Iwai"",""H. Isshiki"",""T. Meguro"",""T. Sugano"",""Y. Aoyagi""],[""K. Mukai"",""N. Ohtsuka"",""H. Shoji"",""M. Sugawara""],[""S. Hirose"",""A. Yoshida"",""M. Yamaura"",""H. Munekata""],[""K. Kono"",""T. Kurabayashi"",""J. Nishizawa"",""M. Esashi""]]","[1994,1985,1987,1988,1990,1992,1994,1993,2000,1990,1992,1997,1985,1986,1986,1986,1986,1987,1988,1988,1988,1989,1989,1989,1989,1989,1989,1989,1989,1990,1990,1990,1990,1990,1990,1990,1991,1991,1991,1991,1991,1992,1992,1992,1993,1993,1993,1993,1993,1993,1993,1993,1993,1994,1994,1994,1996,1996,1996,1997,1999,2000]","[""Appl. Surf. Sci."",""Appl. Phys. Lett."",""J. Vac. Sci. Technol., B"",""J. Cryst. Growth"",""J. Cryst. Growth"",""Appl. Phys. Lett."",""Appl. Surf. Sci."",""Thin Solid Films"",""J. Cryst. Growth"",""Appl. Phys. Lett."",""J. Electron. Mater."",""Appl. Surf. Sci."",""J. Electrochem. Soc."",""Appl. Phys. Lett."",""J. Cryst. Growth"",""Appl. Phys. Lett."",""Appl. Phys. Lett."",""Appl. Phys. Lett."",""Appl. Phys. Lett."",""J. Cryst. Growth"",""Appl. Phys. Lett."",""J. Vac. Sci. Technol., B"",""Appl. Phys. Lett."",""Prog. Cryst. Growth. Charact. Mater."",""Appl. Phys. Lett."",""Jpn. J. Appl. Phys., Part 2"",""Jpn. J. Appl. Phys., Part 2"",""Appl. Phys. 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Lett. 90, 162115 (2007).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_014_table_009/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_014_table_009/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..7c3ad8e94944c0bd2657a823f22a2ed329c7c630 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_014_table_009/gold.csv @@ -0,0 +1,57 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +38,Strontium,,,,[],[],[],[],[],[],[] +,SrO (SrCO3),Sr(CpiPr3)2,H2O,1505 and 1506,"[1505,1506]","[""10.1021/cm902180d"",""""]","[""In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb2Te3 and GeTe from (Et3Si)(2)Te and Chlorides"",""Atomic Layer Deposition of SrTiO _3 Thin Films from a Novel Strontium Precursor--Strontium-bis(tri-isopropylcyclopentadienyl)""]","[[""Knapas, Kjell"",""Hatanp a a, Timo"",""Ritala, Mikko"",""Leskel a, Markku""],[""M. Vehkam aki"",""T. H anninen"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""E. Rauhala"",""J. Keinonen""]]","[2010,2001]","[""Chem. Mater."",""Chem. Vap. Deposition""]","[""K. Knapas, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, Chem. Mater. 22, 1386 (2010)."",""M. Vehkam€aki, T. H€anninen, M. Ritala, M. Leskel€a, T. Sajavaara, E. Rauhala, and J. Keinonen, Chem. Vap. Deposition 7, 75 (2001).""]" +,,Sr(CpnPrMe3)2,H2O,1507,[1507],"[""""]","[""In situ characterization of atomic layer deposition of SrTiO _3""]","[[""A. Rahtu"",""T. H anninen"",""M. Ritala""]]",[2001],"[""J. Phys. IV""]","[""A. Rahtu, T. H€anninen, and M. Ritala, J. Phys. IV 11, Pr3/923 (2001).""]" +,,Sr(CpnPrMe3)2,O2,1507,[1507],"[""""]","[""In situ characterization of atomic layer deposition of SrTiO _3""]","[[""A. Rahtu"",""T. H anninen"",""M. Ritala""]]",[2001],"[""J. Phys. IV""]","[""A. Rahtu, T. H€anninen, and M. Ritala, J. Phys. IV 11, Pr3/923 (2001).""]" +,,Sr(CptBu3)2,H2O,838,[838],"[""10.1149/1.3244213""]","[""Atomic Layer Deposition of Strontium Titanate Films Using Sr((Bu3Cp)-Bu-t)(2) and Ti(OMe)(4)""]","[[""Popovici, M."",""Van Elshocht, S."",""Menou, N."",""Swerts, J."",""Pierreux, D."",""Delabie, A."",""Brijs, B."",""Conard, T."",""Opsomer, K."",""Maes, J. W."",""Wouters, D. J."",""Kittl, J. A.""]]",[2010],"[""J. Electrochem. Soc.""]","[""M. Popovici, S. Van Elshocht, N. Menou, J. Swerts, D. Pierreux, A. Delabie, B. Brijs, T. Conard, K. Opsomer, J. W. Maes, D. J. Wouters, and J. A. Kittl, J. Electrochem. Soc. 157, G1 (2010).""]" +,,Sr(thd)2,O3,1508,[1508],"[""""]","[""Atomic layer deposition and chemical vapor deposition precursor selection method application to strontium and barium precursors""]","[[""Holme, T. P."",""Prinz, F. B.""]]",[2007],"[""J. Phys. Chem. A""]","[""T. P. Holme and F. B. Prinz, J. Phys. Chem. 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Aarik"",""K. Forsgren"",""T. Sajavaara"",""M. Leskel a"",""A. H rsta""],[""K. Forsgren"",""J. Westlinder"",""J. Lu"",""J. Olsson"",""A. H rsta""],[""M. Putkonen"",""L. Niinist o""]]","[2002,2002,2001]","[""Thin Solid Films"",""Chem. Vap. Deposition"",""J. Mater. Chem.""]","[""K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskel€a, and A. Ha˚rsta, Thin Solid Films 410, 53 (2002)."",""K. Forsgren, J. Westlinder, J. Lu, J. Olsson, and A. Ha˚rsta, Chem. Vap. Deposition 8, 105 (2002)."",""M. Putkonen and L. Niinist€o, J. Mater. Chem. 11, 3141 (2001).""]" +,,ZrCp2Me2,H2O,1574 and 1575,"[1574,1575]","["""",""""]","[""Reactions of bis(cyclopentadienyl)zirconium dichloride with porous silica surface"",""Electrical properties of thin yttria-stabilized zirconia overlayers produced by atomic layer deposition for solid oxide fuel cell applications""]","[[""M. Kr oger-Laukkanen"",""M. Peussa"",""M. Leskel a"",""L. 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Deposition""]","[""K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskel€a, and A. Ha˚rsta, Thin Solid Films 410, 53 (2002)."",""M. Putkonen, J. Niinist€o, K. Kukli, T. Sajavaara, M. Karppinen, H. Yamauchi, and L. Niinist€o, Chem. Vap. Deposition 9, 207 (2003).""]" +,,ZrCp2Me(OMe),O3,1577,[1577],"[""10.1021/la0500732""]","[""In situ quadrupole mass spectrometry study of atomic-layer deposition of ZrO2 using Cp2Zr(CH3)(2) and water""]","[[""Niinisto, J."",""Rahtu, A."",""Putkonen, M."",""Ritala, M."",""Leskela, M."",""Niinisto, L.""]]",[2005],"[""Langmuir""]","[""J. Niinist€o, A. Rahtu, M. Putkonen, M. Ritala, M. Leskel€a, and L. Niinist€o, Langmuir 21, 7321 (2005).""]" +,,ZrCp(NMe2)3,O3,1578,[1578],"[""""]","[""Structural and dielectric properties of thin ZrO _2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor""]","[[""J. Niinisto"",""M. Putkonen"",""L. Niinisto"",""K. Kukli"",""M. Ritala"",""M. Leskel a""]]",[2004],"[""J. Appl. Phys.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, K. Kukli, M. Ritala, and M. Leskel€a, J. Appl. Phys. 95, 84 (2004).""]" +,,Zr (CpMe)2Me2,O3,1579–1581,"[1579,1580,1581]","["""",""10.1116/1.3071844"",""10.1002/cvde.200806716""]","[""Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films"",""Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition"",""The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source""]","[[""Jinesh, K. B."",""Besling, W. F. A."",""Tois, E."",""Klootwijk, J. H."",""Wolters, R."",""Dekkers, W."",""Kaiser, M."",""Bakker, F."",""Tuominen, M."",""Roozeboom, F.""],[""Kukli, Kaupo"",""Niinist o, Jaakko"",""Tamm, Aile"",""Ritala, Mikko"",""Leskel a, Markku""],[""Dezelah IV, Charles L."",""Niinist o, Jaakko"",""Kukli, Kaupo"",""Munnik, Frans"",""Lu, Jun"",""Ritala, Mikko"",""Leskel a, Markku"",""Niinist o, Lauri""]]","[2008,2009,2008]","[""Appl. Phys. Lett."",""J. Vac. Sci. Technol., B"",""Chem. Vap. Deposition""]","[""K. B. Jinesh, W. F. A. Besling, E. Tois, J. H. Klootwijk, R. Wolters, W. Dekkers, M. Kaiser, F. Bakker, M. Tuominen, and F. Roozeboom, Appl. Phys. Lett. 93, 062903 (2008)."",""K. Kukli, J. Niinist€o, A. Tamm, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 226 (2009)."",""C. L. Dezelah IV, J. Niinist€o, K. Kukli, F. Munnik, J. Lu, M. Ritala, M. Leskel€a, and L. Niinist€o, Chem. Vap. Deposition 14, 358 (2008).""]" +,,Zr(CpMe)2Me(OMe),H2O,1582,[1582],"[""10.1039/b802523a""]","[""Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO _2 thin films""]","[[""Jaakko Niinistoand Kaupo Kukli"",""Aile Tamm"",""Matti Putkonen"",""Charles L. Dezelah IV"",""Lauri Niinistoand Jun Lu"",""Fuquan Song"",""Paul Williams"",""Peter N. Heys"",""Mikko Ritala"",""Markku Leskela""]]",[2008],"[""J. Mater. Chem.""]","[""J. Niinist€o, K. Kukli, A. Tamm, M. Putkonen, C. L. Dezelah IV, L. Niinist€o, J. Lu, F. Song, P. Williams, P. N. Heys, M. Ritala, and M. Leskel€a, J. Mater. Chem. 18, 3385 (2008).""]" +,,Zr(CpMe)2Me(OMe),O3,1579–1584,"[1579,1580,1581,1582,1583,1584]","["""",""10.1116/1.3071844"",""10.1002/cvde.200806716"",""10.1039/b802523a"",""10.1116/1.3025865"",""""]","[""Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films"",""Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition"",""The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source"",""Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO _2 thin films"",""Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors"",""In Situ Reaction Mechanism Studies on Atomic Layer Deposition of ZrO2 from (CpMe)2Zr(OMe)Me and Water or Ozone""]","[[""Jinesh, K. B."",""Besling, W. F. A."",""Tois, E."",""Klootwijk, J. H."",""Wolters, R."",""Dekkers, W."",""Kaiser, M."",""Bakker, F."",""Tuominen, M."",""Roozeboom, F.""],[""Kukli, Kaupo"",""Niinist o, Jaakko"",""Tamm, Aile"",""Ritala, Mikko"",""Leskel a, Markku""],[""Dezelah IV, Charles L."",""Niinist o, Jaakko"",""Kukli, Kaupo"",""Munnik, Frans"",""Lu, Jun"",""Ritala, Mikko"",""Leskel a, Markku"",""Niinist o, Lauri""],[""Jaakko Niinistoand Kaupo Kukli"",""Aile Tamm"",""Matti Putkonen"",""Charles L. Dezelah IV"",""Lauri Niinistoand Jun Lu"",""Fuquan Song"",""Paul Williams"",""Peter N. Heys"",""Mikko Ritala"",""Markku Leskela""],[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""G omez, A."",""Bail on, L."",""Kukli, K."",""Niinist o, J."",""Ritala, M."",""Leskel a, M.""],[""Knapas, Kjell"",""Ritala, Mikko""]]","[2008,2009,2008,2008,2009,2008]","[""Appl. Phys. Lett."",""J. Vac. Sci. Technol., B"",""Chem. Vap. Deposition"",""J. Mater. Chem."",""J. Vac. Sci. Technol., B"",""Chem. Mater.""]","[""K. B. Jinesh, W. F. A. Besling, E. Tois, J. H. Klootwijk, R. Wolters, W. Dekkers, M. Kaiser, F. Bakker, M. Tuominen, and F. Roozeboom, Appl. Phys. Lett. 93, 062903 (2008)."",""K. Kukli, J. Niinist€o, A. Tamm, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 226 (2009)."",""C. L. Dezelah IV, J. Niinist€o, K. Kukli, F. Munnik, J. Lu, M. Ritala, M. Leskel€a, and L. Niinist€o, Chem. Vap. Deposition 14, 358 (2008)."",""J. Niinist€o, K. Kukli, A. Tamm, M. Putkonen, C. L. Dezelah IV, L. Niinist€o, J. Lu, F. Song, P. Williams, P. N. Heys, M. Ritala, and M. Leskel€a, J. Mater. Chem. 18, 3385 (2008)."",""S. Due~nas, H. Cast\u0003an, H. Garc\u0003ıa, A. G\u0003omez, L. Bail\u0003on, K. Kukli, J. Niinist€o, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 389 (2009)."",""K. Knapas and M. Ritala, Chem. Mater. 20, 5698 (2008).""]" +,,Zr(CpMe)(NMe2)3,O3,1578,[1578],"[""""]","[""Structural and dielectric properties of thin ZrO _2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor""]","[[""J. Niinisto"",""M. Putkonen"",""L. Niinisto"",""K. Kukli"",""M. Ritala"",""M. Leskel a""]]",[2004],"[""J. Appl. Phys.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, K. Kukli, M. Ritala, and M. Leskel€a, J. Appl. Phys. 95, 84 (2004).""]" +,,Zr(CpEt)(NMe2)3,O3,1578,[1578],"[""""]","[""Structural and dielectric properties of thin ZrO _2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor""]","[[""J. Niinisto"",""M. Putkonen"",""L. Niinisto"",""K. Kukli"",""M. Ritala"",""M. Leskel a""]]",[2004],"[""J. Appl. Phys.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, K. Kukli, M. Ritala, and M. Leskel€a, J. Appl. Phys. 95, 84 (2004).""]" +,,Zr(Cp2CMe2)Me2,O3,1585,[1585],"[""10.1149/1.3478117""]","[""Investigation of ZrO2-Gd2O3 Based High-k Materials as Capacitor Dielectrics""]","[[""J ogi, Indrek"",""Tamm, Aile"",""Kukli, Kaupo"",""Kemell, Marianna"",""Lu, Jun"",""Sajavaara, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2010],"[""J. Electrochem. Soc.""]","[""I. J~ogi, A. Tamm, K. Kukli, M. Kemell, J. Lu, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 157, G202 (2010).""]" +,,Zr(Cp2CMe2)\-Me(OMe),O3,1585,[1585],"[""10.1149/1.3478117""]","[""Investigation of ZrO2-Gd2O3 Based High-k Materials as Capacitor Dielectrics""]","[[""J ogi, Indrek"",""Tamm, Aile"",""Kukli, Kaupo"",""Kemell, Marianna"",""Lu, Jun"",""Sajavaara, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2010],"[""J. Electrochem. Soc.""]","[""I. J~ogi, A. Tamm, K. Kukli, M. Kemell, J. Lu, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 157, G202 (2010).""]" +,,Zr(OiPr)4,H2O,1586,[1586],"[""DOI: 10.1016/j.tsf.2010.08.111""]","[""Atomic layer deposition and characterization of zirconium oxide-erbium oxide nanolaminates""]","[[""Aile Tamm"",""Mikko Heikkil a"",""Marianna Kemell"",""Jekaterina Kozlova"",""Kaupo Kukli"",""V�ino Sammelselg"",""Mikko Ritala"",""Markku Leskel a""]]",[2010],"[""Thin Solid Films""]","[""A. Tamm, M. Heikkil€a, M. Kemell, J. Kozlova, K. Kukli, V. Sammelselg, M. Ritala, and M. Leskel€a, Thin Solid Films 519, 666 (2010); special section: Romanian Conference on Advanced Materials 2009.""]" +,,Zr(OiPr)2(dmae)2,H2O,861 and 1587,"[861,1587]","["""",""10.1039/b807205a""]","[""Zirconium doping in titanium oxide photocatalytic films prepared by atomic layer deposition"",""Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors""]","[[""Qiu, S. H."",""Starr, T. L.""],[""Black, Kate"",""Aspinall, Helen C."",""Jones, Anthony C."",""Przybylak, Katarzyna"",""Bacsa, John"",""Chalker, Paul R."",""Taylor, Stephen"",""Zhao, Ce Zhou"",""Elliott, Simon D."",""Zydor, Aleksandra"",""Heys, Peter N.""]]","[2007,2008]","[""J. Electrochem. Soc."",""J. Mater. Chem.""]","[""S. H. Qiu and T. L. Starr, J. Electrochem. Soc. 154, H472 (2007)."",""K. Black, H. C. Aspinall, A. C. Jones, K. Przybylak, J. Bacsa, P. R. Chalker, S. Taylor, C. Z. Zhao, S. D. Elliott, A. Zydor, and P. N. Heys, J. Mater. Chem. 18, 4561 (2008).""]" +,,Zr(OtBu)4,H2O,"273, 850, 852, 853, 879, and 1588–1594","[273,850,852,853,879,1588,1589,1590,1591,1592,1593,1594]","["""","""","""","""",""10.1149/1.3033500"","""","""","""","""","""","""",""""]","[""Template-directed gas-phase fabrication of oxide nanotubes"",""Formation of TiO _2 and ZrO _2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness"",""Fabrication of oxide/semiconducting coaxial nanotubular materials using atomic layer deposition"",""Synthesis of metal-oxide nanotubular structures by using atomic layer deposition on nanotemplates"",""Composition-Dependent Structural and Electrical Properties of ZrxTiyO2 Films Grown on RuO2 Substrate by ALD"",""Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption and reaction for microelectromechanical devices"",""Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition. Growth of Zirconium Dioxide Thin Films and Reaction Mechanism Studies"",""Low-Temperature Deposition of Zirconium Oxide-Based Nanocrystalline Films by Alternate Supply of Zr[OC(CH _3 ) _3 ] _4 and H _2 O"",""Atomic-layer deposition of ZrO _2 with a Si nitride barrier layer"",""Characteristics of ZrO _2 thin films by atomic layer deposition for alternative gate dielectric applications"",""Growth and electrical properties of atomic-layer deposited ZrO _2 Si -nitride stack gate dielectrics"",""Effects of various oxidizers on the ZrO _2 thin films deposited by atomic layer deposition""]","[[""Bae, C. D."",""Kim, S. Y."",""Ahn, B. Y."",""Kim, J. Y."",""Sung, M. M."",""Shin, H. J.""],[""H. Shin"",""D.-K. Jeong"",""J. Lee"",""M. M. Sung"",""J. Kim""],[""D. K. Jeong"",""N. H. Park"",""S. H. Jung"",""W. G. Jung"",""H. Shin"",""J. G. Lee"",""J. Y. Kim""],[""D. Jeong"",""J. Lee"",""H. Shin"",""J. Lee"",""J. Kim"",""M. Sung""],[""Kwon, Hyuk"",""Park, Hyun-Hee"",""Kim, Byong-Ho"",""Ha, Jeong Sook""],[""Nistorica, C."",""Liu, J. F."",""Gory, I."",""Skidmore, G. D."",""Mantiziba, F. M."",""Gnade, B. E."",""Kim, J.""],[""R. Matero"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""A. C. Jones"",""J. L. Roberts""],[""K. Kukli"",""M. Ritala"",""M. Leskel a""],[""A. Nakajima"",""T. Kidera"",""H. Ishii"",""S. Yokoyama""],[""J. Park"",""B. Choi"",""N. Park"",""H. J. Shin"",""J. G. Lee"",""J. Kim""],[""H. Ishii"",""A. Nakajima"",""S. Yokoyama""],[""D. Jeong"",""J. Lee"",""J. Kim""]]","[2008,2004,2004,2004,2009,2005,2004,2000,2002,2002,2004,2004]","[""J. Mater. Chem."",""Adv. Mater."",""Mater. Sci. Forum"",""J. Korean Phys. Soc."",""J. Electrochem. Soc."",""J. Vac. Sci. Technol., A"",""Chem. Mater."",""Chem. Vap. Deposition"",""Appl. Phys. Lett."",""Integr. Ferroelectr."",""J. Appl. Phys."",""Integr. Ferroelectr.""]","[""C. D. Bae, S. Y. Kim, B. Y. Ahn, J. Y. Kim, M. M. Sung, and H. J. Shin, J. Mater. Chem. 18, 1362 (2008)."",""H. Shin, D.-K. Jeong, J. Lee, M. M. Sung, and J. Kim, Adv. Mater. 16, 1197 (2004)."",""D. K. Jeong, N. H. Park, S. H. Jung, W. G. Jung, H. Shin, J. G. Lee, and J. Y. Kim, Mater. Sci. Forum 449-452, 1165 (2004)."",""D. Jeong, J. Lee, H. Shin, J. Lee, J. Kim, and M. Sung, J. Korean Phys. Soc. 45, 1249 (2004)."",""H. Kwon, H.-H. Park, B.-H. Kim, and J. S. Ha, J. Electrochem. Soc. 156, G13 (2009)."",""C. Nistorica, J. F. Liu, I. Gory, G. D. Skidmore, F. M. Mantiziba, B. E. Gnade, and J. Kim, J. Vac. Sci. Technol. A 23, 836 (2005)."",""R. Matero, M. Ritala, M. Leskel€a, T. Sajavaara, A. C. Jones, and J. L. Roberts, Chem. Mater. 16, 5630 (2004)."",""K. Kukli, M. Ritala, and M. Leskel€a, Chem. Vap. Deposition 6, 297 (2000)."",""A. Nakajima, T. Kidera, H. Ishii, and S. Yokoyama, Appl. Phys. Lett. 81, 2824 (2002)."",""J. Park, B. Choi, N. Park, H. J. Shin, J. G. Lee, and J. Kim, Integr. Ferroelectr. 48, 23 (2002)."",""H. Ishii, A. Nakajima, and S. Yokoyama, J. Appl. Phys. 95, 536 (2004)."",""D. Jeong, J. Lee, and J. Kim, Integr. Ferroelectr. 67, 41 (2004).""]" +,,Zr(OtBu)4,O2,1592,[1592],"[""""]","[""Characteristics of ZrO _2 thin films by atomic layer deposition for alternative gate dielectric applications""]","[[""J. Park"",""B. Choi"",""N. Park"",""H. J. Shin"",""J. G. Lee"",""J. Kim""]]",[2002],"[""Integr. Ferroelectr.""]","[""J. Park, B. Choi, N. Park, H. J. Shin, J. G. Lee, and J. Kim, Integr. Ferroelectr. 48, 23 (2002).""]" +,,Zr(OtBu)4,O2⚡,1595–1598,"[1595,1596,1597,1598]","[""10.1016/j.tsf.2009.01.173"",""DOI: 10.1016/j.tsf.2010.03.059"","""",""""]","[""Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors"",""UV-enhanced atomic layer deposition of ZrO2 thin films at room temperature"",""ZrO _2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method"",""Characteristics of ZrO _2 gate dielectric deposited using Zr t �butoxide and Zr(NEt _2 ) _4 precursors by plasma enhanced atomic layer deposition method""]","[[""Lee, Byoung H."",""Im, Kyo K."",""Lee, Kwang H."",""Im, Seongil"",""Sung, Myung M.""],[""Byoung H. Lee"",""Sangho Cho"",""Jae K. Hwang"",""Su H. Kim"",""Myung M. Sung""],[""J. Koo"",""Y. Kim"",""H. Jeon""],[""Y. Kim"",""J. Koo"",""J. Han"",""S. Choi"",""H. Jeon"",""C.-G. Park""]]","[2009,2010,2002,2002]","[""Thin Solid Films"",""Thin Solid Films"",""Jpn. J. Appl. Phys., Part 1"",""J. Appl. Phys.""]","[""B. H. Lee, K. K. Im, K. H. Lee, S. Im, and M. M. Sung, Thin Solid Films 517, 4056 (2009)."",""B. H. Lee, S. Cho, J. K. Hwang, S. H. Kim, and M. M. Sung, Thin Solid Films 518, 6432 (2010)."",""J. Koo, Y. Kim, and H. Jeon, Jpn. J. Appl. Phys., Part 1 41, 3043 (2002)."",""Y. Kim, J. Koo, J. Han, S. Choi, H. Jeon, and C.-G. Park, J. Appl. Phys. 92, 5443 (2002).""]" +,,Zr(OtBu)4,N2O,1592,[1592],"[""""]","[""Characteristics of ZrO _2 thin films by atomic layer deposition for alternative gate dielectric applications""]","[[""J. Park"",""B. Choi"",""N. Park"",""H. J. Shin"",""J. G. Lee"",""J. Kim""]]",[2002],"[""Integr. Ferroelectr.""]","[""J. Park, B. Choi, N. Park, H. J. Shin, J. G. Lee, and J. Kim, Integr. Ferroelectr. 48, 23 (2002).""]" +,,Zr(OtBu)4,Ar⚡,1598,[1598],"[""""]","[""Characteristics of ZrO _2 gate dielectric deposited using Zr t �butoxide and Zr(NEt _2 ) _4 precursors by plasma enhanced atomic layer deposition method""]","[[""Y. Kim"",""J. Koo"",""J. Han"",""S. Choi"",""H. Jeon"",""C.-G. Park""]]",[2002],"[""J. Appl. Phys.""]","[""Y. Kim, J. Koo, J. Han, S. Choi, H. Jeon, and C.-G. Park, J. Appl. Phys. 92, 5443 (2002).""]" +,,Zr(OtBu)2(dmae)2,H2O,1587 and 1599,"[1587,1599]","[""10.1039/b807205a"",""""]","[""Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors"",""Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation""]","[[""Black, Kate"",""Aspinall, Helen C."",""Jones, Anthony C."",""Przybylak, Katarzyna"",""Bacsa, John"",""Chalker, Paul R."",""Taylor, Stephen"",""Zhao, Ce Zhou"",""Elliott, Simon D."",""Zydor, Aleksandra"",""Heys, Peter N.""],[""K. Endo"",""T. Tatsumi""]]","[2008,2003]","[""J. Mater. Chem."",""Jpn. J. Appl. Phys., Part 2""]","[""K. Black, H. C. Aspinall, A. C. Jones, K. Przybylak, J. Bacsa, P. R. Chalker, S. Taylor, C. Z. Zhao, S. D. Elliott, A. Zydor, and P. N. Heys, J. Mater. Chem. 18, 4561 (2008)."",""K. Endo and T. Tatsumi, Jpn. J. Appl. Phys., Part 2 42, L685 (2003).""]" +,,Zr(OtBu)2(dmae)2,H2⚡,1600,[1600],"[""""]","[""Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation""]","[[""K. Endo"",""T. Tatsumi""]]",[2004],"[""Jpn. J. Appl. Phys., Part 2""]","[""K. Endo and T. Tatsumi, Jpn. J. Appl. Phys., Part 2 43, L1296 (2004).""]" +,,Zr(dmae)4,H2O,1587,[1587],"[""10.1039/b807205a""]","[""Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors""]","[[""Black, Kate"",""Aspinall, Helen C."",""Jones, Anthony C."",""Przybylak, Katarzyna"",""Bacsa, John"",""Chalker, Paul R."",""Taylor, Stephen"",""Zhao, Ce Zhou"",""Elliott, Simon D."",""Zydor, Aleksandra"",""Heys, Peter N.""]]",[2008],"[""J. Mater. Chem.""]","[""K. Black, H. C. Aspinall, A. C. Jones, K. Przybylak, J. Bacsa, P. R. Chalker, S. Taylor, C. Z. Zhao, S. D. Elliott, A. Zydor, and P. N. Heys, J. Mater. Chem. 18, 4561 (2008).""]" +,,Zr(thd)4,O3⚡,1571,[1571],"[""""]","[""Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon""]","[[""K. Kukli"",""M. Ritala"",""T. Uustare"",""J. Aarik"",""K. Forsgren"",""T. Sajavaara"",""M. Leskel a"",""A. H rsta""]]",[2002],"[""Thin Solid Films""]","[""K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskel€a, and A. Ha˚rsta, Thin Solid Films 410, 53 (2002).""]" +,,Zr(NMe2)4,H2O,"350, 1517–1519, and 1601–1605","[350,1517,1518,1519,1601,1602,1603,1604,1605]","[""10.1002/jrs.2395"","""","""",""10.1021/nl901724j"","""","""","""","""",""""]","[""Use of atomic layer deposition to improve the stability of silver substrates for in situ, high temperature SERS measurements"",""Atomic layer deposition of Y2O3/ZrO2 nanolaminates - A route to ultrathin solid-state electrolyte membranes"",""Atomic layer deposition of yttria-stabilized zirconia for solid oxide fuel cells"",""Surface Modification of Yttria-Stabilized Zirconia Electrolyte by Atomic Layer Deposition"",""Atomic layer deposition of ZrO _2 thin films using a new alkoxide precursor"",""ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition"",""Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors"",""Surface morphology and crystallinity control in the atomic layer deposition ( ALD ) of hafnium and zirconium oxide thin films"",""Surface Passivation of Nanoprous TiO2 via Atomic Layer Deposition of ZrO2 for Solid-State Dye-Sensitized Solar Cell Applications""]","[[""John, Joshy F."",""Mahurin, Shannon"",""Dai, Sheng"",""Sepaniak, Michael J.""],[""Ginestra, C. N."",""Sreenivasan, R."",""Karthikeyan, A."",""Ramanathan, S."",""McIntyre, P. C.""],[""Shim, J. H."",""Chao, C. C."",""Huang, H."",""Prinz, F. B.""],[""Chao, Cheng-Chieh"",""Kim, Young Beom"",""Prinz, Fritz B.""],[""R. Matero"",""M. Ritala"",""M. Leskel a"",""A. C. Jones"",""P. A. Williams"",""J. F. Bickley"",""A. Steiner"",""T. J. Leedham"",""H. O. Davies""],[""Tak, Y."",""Yong, K.""],[""D. M. Hausmann"",""E. Kim"",""J. Becker"",""R. G. Gordon""],[""D. M. Hausmann"",""R. G. Gordon""],[""Li, Tina C."",""Goes, Marcio S."",""Fabregat-Santiago, Francisco"",""Bisquert, Juan"",""Bueno, Paulo R."",""Prasittichai, Chaiya"",""Hupp, Joseph T."",""Marks, Tobin J.""]]","[2010,2007,2007,2009,2002,2005,2002,2003,2009]","[""J. Raman Spectrosc."",""Electrochem. Solid-State Lett."",""Chem. Mater."",""Nano Lett."",""J. Non-Cryst. Solids"",""Surf. Rev. Lett."",""Chem. Mater."",""J. Cryst. Growth"",""J. Phys. Chem. C""]","[""J. F. John, S. Mahurin, S. Dai, and M. J. Sepaniak, J. 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Matero"",""M. Ritala"",""M. Leskel a"",""A. C. Jones"",""P. A. Williams"",""J. F. Bickley"",""A. Steiner"",""T. J. Leedham"",""H. O. Davies""],[""Lee, Wonyoung"",""Prinz, Fritz B.""]]","[2009,2009,2009,2009,2002,2009]","[""Semicond. Sci. Technol."",""Thin Solid Films"",""Adv. Mater."",""J. Electrochem. Soc."",""J. Non-Cryst. Solids"",""J. Electrochem. Soc.""]","[""C. Henkel, S. Abermann, O. Bethge, and E. Bertagnolli, Semicond. Sci. Technol. 24, 125013 (2009)."",""O. Bethge, S. Abermann, C. Henkel, and E. Bertagnolli, Thin Solid Films 517, 5543 (2009)."",""J. Meyer, P. Goerrn, F. Bertram, S. Hamwi, T. Winkler, H.-H. Johannes, T. Weimann, P. Hinze, T. Riedl, and W. Kowalsky, Adv. Mater. 21, 1845 (2009)."",""O. Bethge, S. Abermann, C. Henkel, C. J. Straif, H. Hutter, and E. Bertagnolli, J. Electrochem. Soc. 156, G168 (2009)."",""R. Matero, M. Ritala, M. Leskel€a, A. C. Jones, P. A. Williams, J. F. Bickley, A. Steiner, T. J. Leedham, and H. O. Davies, J. Non-Cryst. Solids 303, 24 (2002)."",""W. Lee and F. B. Prinz, J. Electrochem. Soc. 156, G125 (2009).""]" +,,Zr(NEt2)4,O2,1607,[1607],"[""10.1149/1.3070617""]","[""Atomic Layer Deposition of ZrO2 and HfO2 Nanotubes by Template Replication""]","[[""Gu, Diefeng"",""Baumgart, Helmut"",""Namkoong, Gon"",""Abdel-Fattah, Tarek M.""]]",[2009],"[""Electrochem. Solid-State Lett.""]","[""D. Gu, H. Baumgart, G. Namkoong, and T. M. Abdel-Fattah, Electrochem. Solid-State Lett. 12, K25 (2009).""]" +,,Zr(NEt2)4,O2⚡,1596 and 1608,"[1596,1608]","[""DOI: 10.1016/j.tsf.2010.03.059"",""10.1049/el.2009.0728""]","[""UV-enhanced atomic layer deposition of ZrO2 thin films at room temperature"",""Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics""]","[[""Byoung H. Lee"",""Sangho Cho"",""Jae K. Hwang"",""Su H. Kim"",""Myung M. Sung""],[""Abermann, S."",""Pozzovivo, G."",""Kuzmik, J."",""Ostermaier, C."",""Henkel, C."",""Bethge, O."",""Strasser, G."",""Pogany, D."",""Carlin, J. -F."",""Grandjean, N."",""Bertagnolli, E.""]]","[2010,2009]","[""Thin Solid Films"",""Electron. Lett.""]","[""B. H. Lee, S. Cho, J. K. Hwang, S. H. Kim, and M. M. Sung, Thin Solid Films 518, 6432 (2010)."",""S. Abermann, G. Pozzovivo, J. Kuzmik, C. Ostermaier, C. Henkel, O. Bethge, G. Strasser, D. Pogany, J. F. Carlin, N. Grandjean, and E. Bertagnolli, Electron. Lett. 45, 570 (2009).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_015_table_010/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_015_table_010/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..b02250817aa58d732a805a7b6566efd3cfd91755 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_015_table_010/gold.csv @@ -0,0 +1,56 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,Zr(NEtMe)4,H2O,1601 and 1609,"[1601,1609]","["""",""10.1016/j.apsusc.2010.03.049""]","[""Atomic layer deposition of ZrO _2 thin films using a new alkoxide precursor"",""Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium""]","[[""R. Matero"",""M. Ritala"",""M. Leskel a"",""A. C. Jones"",""P. A. Williams"",""J. F. Bickley"",""A. Steiner"",""T. J. Leedham"",""H. O. Davies""],[""Abermann, S."",""Henkel, C."",""Bethge, O."",""Pozzovivo, G."",""Klang, P."",""Bertagnolli, E.""]]","[2002,2010]","[""J. Non-Cryst. Solids"",""Appl. Surf. Sci.""]","[""R. Matero, M. Ritala, M. Leskel€a, A. C. Jones, P. A. Williams, J. F. Bickley, A. Steiner, T. J. Leedham, and H. O. Davies, J. Non-Cryst. Solids 303, 24 (2002)."",""S. Abermann, C. Henkel, O. Bethge, G. Pozzovivo, P. Klang, and E. Bertagnolli, Appl. Surf. Sci. 256, 5031 (2010).""]" +,,Zr(NEtMe)4,O3,1610–1615,"[1610,1611,1612,1613,1614,1615]","["""",""10.1016/j.mee.2008.03.020"","""","""","""",""""]","[""Deposition and plasma measurements of Zr-oxide films with low impurity concentrations by remote PEALD"",""A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films"",""Impact of deposition processes on properties of atomic-layer-deposited hafnium zirconate high-k dielectrics"",""Physical and electrical properties of atomic-layer-deposited HfxZr1-xO2 with TEMAHf, TEMAZr, and ozone"",""Atomic layer deposition of ZrO2 thin films with high dielectric constant on TiN substrates"",""Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor""]","[[""Kim, J. Y."",""Kim, S. H."",""Seo, H."",""Kim, J. H."",""Jeon, H.""],[""Lee, B."",""Choi, K. J."",""Hande, A."",""Kim, M. J."",""Wallace, R. M."",""Kim, J."",""Senzaki, Y."",""Shenai, D."",""Li, H."",""Rousseau, M."",""Suydam, J.""],[""Triyoso, D. H."",""Hegde, R. I."",""Gregory, R.""],[""Triyoso, D. H."",""Gregory, R."",""Park, M."",""Wang, K."",""Lee, S. I.""],[""Kim, S. K."",""Hwang, C. S.""],[""Kim, J. H."",""Ignatova, V. A."",""Heitmann, J."",""Oberbeck, L.""]]","[2005,2009,2007,2008,2008,2008]","[""Electrochem. Solid-State Lett."",""Microelectron. Eng."",""Electrochem. Solid-State Lett."",""J. Electrochem. Soc."",""Electrochem. Solid-State Lett."",""J. Phys. D: Appl. Phys.""]","[""J. Y. Kim, S. H. Kim, H. Seo, J. H. Kim, and H. Jeon, Electrochem. Solid-State Lett. 8, G82 (2005)."",""B. Lee, K. J. Choi, A. Hande, M. J. Kim, R. M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau, and J. Suydam, Microelectron. Eng. 86, 272 (2009)."",""D. H. Triyoso, R. I. Hegde, and R. Gregory, Electrochem. Solid-State Lett. 10, H354 (2007)."",""D. H. Triyoso, R. Gregory, M. Park, K. Wang, and S. I. Lee, J. Electrochem. 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J."",""Reiche, R."",""Erben, E."",""Heitmann, J."",""Oberbeck, L."",""Schr oder, U.""],[""Li, Ming-Yen"",""Tsai, Bin-Siang"",""Jiang, Pei-Chuen"",""Wu, Hsiao-Che"",""Wu, Yung-Hsien"",""Lin, Yu-Jen""],[""Yun, S. J."",""Lim, J. W."",""Lee, J. H.""],[""Yun, S. J."",""Lim, J. W."",""Lee, J. H.""]]","[2009,2010,2004,2005]","[""J. Appl. Phys."",""Thin Solid Films"",""Electrochem. Solid-State Lett."",""Electrochem. Solid-State Lett.""]","[""W. Weinreich, V. A. Ignatova, L. Wilde, S. Teichert, M. Lemberger, A. J. Bauer, R. Reiche, E. Erben, J. Heitmann, L. Oberbeck, and U. Schr€oder, J. Appl. Phys. 106, 034107 (2009)."",""M.-Y. Li, B.-S. Tsai, P.-C. Jiang, H.-C. Wu, Y.-H. Wu, and Y.-J. Lin, Thin Solid Films 518, 5272 (2010)."",""S. J. Yun, J. W. Lim, and J. H. Lee, Electrochem. Solid-State Lett. 7, F81 (2004)."",""S. J. Yun, J. W. Lim, and J. H. Lee, Electrochem. Solid-State Lett. 8, F47 (2005).""]" +,,Zr(NEtMe)4,N2O⚡,1618,[1618],"[""""]","[""PEALD of zirconium oxide using tetrakis(ethylmethylamino)zirconium and oxygen""]","[[""Yun, S. J."",""Lim, J. W."",""Lee, J. H.""]]",[2004],"[""Electrochem. Solid-State Lett.""]","[""S. J. Yun, J. W. Lim, and J. H. Lee, Electrochem. Solid-State Lett. 7, F81 (2004).""]" +,,Zr(NEtMe)4,q,998,[998],"[""10.1021/jp8102172""]","[""Thermal Chemistry of Tetrakis(ethylmethylamido)titanium on Si(100) Surfaces""]","[[""Kan, Byung-Chang"",""Boo, Jin-Hyo"",""Lee, Ilkeun"",""Zaera, Francisco""]]",[2009],"[""J. Phys. Chem. A""]","[""B.-C. Kan, J.-H. Boo, I. Lee, and F. Zaera, J. Phys. Chem. A 113, 3946 (2009).""]" +,,Zr[N(SiMe3)2]2Cl2,H2O,1620,[1620],"[""10.1021/cm9005234""]","[""The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films""]","[[""Won, Seok-Jun"",""Kim, Ju-Youn"",""Choi, Gyu-Jin"",""Heo, Jaeyeong"",""Hwang, Cheol Seong"",""Kim, Hyeong Joon""]]",[2009],"[""Chem. Mater.""]","[""S.-J. Won, J.-Y. Kim, G.-J. Choi, J. Heo, C. S. Hwang, and H. J. Kim, Chem. Mater. 21, 4374 (2009).""]" +,,Zr(MeAMD)4,H2O,1609,[1609],"[""10.1016/j.apsusc.2010.03.049""]","[""Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium""]","[[""Abermann, S."",""Henkel, C."",""Bethge, O."",""Pozzovivo, G."",""Klang, P."",""Bertagnolli, E.""]]",[2010],"[""Appl. Surf. Sci.""]","[""S. Abermann, C. Henkel, O. Bethge, G. Pozzovivo, P. Klang, and E. Bertagnolli, Appl. Surf. Sci. 256, 5031 (2010).""]" +,ZrNx,ZrCp2(NMe2)2,N2⚡,1621,[1621],"[""10.1103/PhysRevB.82.094104""]","[""Structural properties and electronic structure of HfO2-ZrO2 composite films""]","[[""Cho, Deok-Yong"",""Jung, Hyung-Suk"",""Hwang, Cheol Seong""]]",[2010],"[""Phys. Rev. B""]","[""D.-Y. Cho, H.-S. Jung, and C. S. Hwang, Phys. Rev. B 82, 094104 (2010).""]" +,,Zr(NMe2)4,NH3,1622,[1622],"[""""]","[""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""W.-H. Nam"",""S.-W. Rhee""]]",[2004],"[""Chem. Vap. Deposition""]","[""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" +,,Zr(NEtMe)4,NH3,1622,[1622],"[""""]","[""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""W.-H. Nam"",""S.-W. Rhee""]]",[2004],"[""Chem. Vap. Deposition""]","[""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" +,,Zr(NEt2)4,NH3,1622,[1622],"[""""]","[""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""W.-H. Nam"",""S.-W. Rhee""]]",[2004],"[""Chem. Vap. Deposition""]","[""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" +,,Zr(NEt2)4,N2⚡,1623,[1623],"[""10.1016/j.ica.2009.07.004""]","[""Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD""]","[[""Potts, Stephen E."",""Carmalt, Claire J."",""Blackman, Christopher S."",""Abou-Chahine, Fawzi"",""Leick, Noemi"",""Kessels, W. M. M."",""Davies, Hywel O."",""Heys, Peter N.""]]",[2010],"[""Inorg. Chim. Acta""]","[""S. E. Potts, C. J. Carmalt, C. S. Blackman, F. Abou-Chahine, N. Leick, W. M. M. Kessels, H. O. Davies, and P. N. Heys, Inorg. Chim. Acta 363, 1077 (2010).""]" +,ZrxAlyOz,ZrCl4,Al(OEt)3,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,ZrxSiyOz,ZrCl4,Si(OEt)4,103 and 1624,"[103,1624]","["""",""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""J. S. Becker"",""E. Kim"",""R. G. Gordon""]]","[2000,2004]","[""Science"",""Chem. Mater.""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000)."",""J. S. Becker, E. Kim, and R. G. Gordon, Chem. Mater. 16, 3497 (2004).""]" +,,ZrCl4,Si(OnBu)4,103 and 651,"[103,651]","["""",""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Atomic layer deposition of zirconium silicate films using zirconium tetra- tert -butoxide and silicon tetrachloride""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""W. K. Kim"",""S. W. Kang"",""S. W. Rhee""]]","[2000,2003]","[""Science"",""J. Vac. Sci. Technol., A""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000)."",""W. K. Kim, S. W. Kang, and S. W. Rhee, J. Vac. Sci. Technol. A 21, L16 (2003).""]" +,,Zr(OtBu)4,SiCl4,650,[650],"[""""]","[""Growth and characterization of titanium silicate nanofilms for gate oxide applications""]","[[""Lee, S."",""Kim, J."",""Yong, K.""]]",[2008],"[""J. Nanosci. Nanotechnol.""]","[""S. Lee, J. Kim, and K. Yong, J. Nanosci. Nanotechnol. 8, 577 (2008).""]" +,,Zr(NEt2)4,Si(OnBu)4,652,[652],"[""""]","[""Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate""]","[[""W. K. Kim"",""S. W. Kang"",""S. W. Rhee"",""N. I. Lee"",""J. H. Lee"",""H. K. Kang""]]",[2002],"[""J. Vac. Sci. Technol., A""]","[""W. K. Kim, S. W. Kang, S. W. Rhee, N. I. Lee, J. H. Lee, and H. K. Kang, J. Vac. Sci. Technol. A 20, 2096 (2002).""]" +,ZrxTiyOz,ZrCl4,Ti(OiPr)4,"103, 1000, and 1001","[103,1000,1001]","["""","""",""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Atomic Layer Deposition of Zirconium Titanium Oxide from Titanium Isopropoxide and Zirconium Chloride"",""Reaction Mechanism Studies on the Atomic Layer Deposition of Zr _x Ti _y O _z Using the Novel Metal Halide--Metal Alkoxide Approach""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""A. Rahtu"",""M. Ritala"",""M. Leskel a""],[""A. Rahtu"",""M. Ritala""]]","[2000,2001,2002]","[""Science"",""Chem. Mater."",""Langmuir""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000)."",""A. Rahtu, M. Ritala, and M. Leskel€a, Chem. Mater. 13, 1528 (2001)."",""A. Rahtu and M. Ritala, Langmuir 18, 10046 (2002).""]" +,ZrxLayOz,Zr(CpMe)2\-Me(OMe),La(iPrCp)3,1625,[1625],"[""""]","[""Barrier characteristics of ZrN films deposited by remote plasma-enhanced atomic layer deposition using tetrakis(diethylamino)zirconium precursor""]","[[""Cho, S."",""Lee, K."",""Song, P."",""Jeon, H."",""Kim, Y.""]]",[2007],"[""Jpn. J. Appl. Phys.""]","[""S. Cho, K. Lee, P. Song, H. Jeon, and Y. Kim, Jpn. J. Appl. Phys., Part 1 46, 4085 (2007).""]" +41,Niobium,,,,[],[],[],[],[],[],[] +,Nb2O5,Nb(OEt)5,H2O,"91, 122, 391, 842, 1539, and 1626–1629","[91,122,391,842,1539,1626,1627,1628,1629]","["""","""",""10.1021/am100217m"","""","""","""","""","""",""""]","[""Development of dielectric properties of niobium oxide, tantalum oxide, and aluminum oxide based nanolayered materials"",""In situ characterization of atomic layer deposition processes by a mass spectrometer"",""Protecting Polymers in Space with Atomic Layer Deposition Coatings"",""In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal ( Ti, Ta, and Nb ) Ethoxides and Water"","""",""Crystallization in hafnia- and zirconia-based systems"",""Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition"",""Niobium Oxide Thin Films Grown by Atomic Layer Epitaxy"",""Properties of atomic layer deposited ( Ta _ 1�x Nb _x ) _2 O _5 solid solution films and Ta _2 O _5 -- Nb _2 _O 5 nanolaminates""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a""],[""M. Ritala"",""M. Juppo"",""K. Kukli"",""A. Rahtu"",""M. Leskel a""],[""Minton, Timothy K."",""Wu, Bohan"",""Zhang, Jianming"",""Lindholm, Ned F."",""Abdulagatov, Aziz I."",""O'Patchen, Jennifer"",""George, Steven M."",""Groner, Markus D.""],[""A. Rahtu"",""K. Kukli"",""M. Ritala""],[],[""S. V. Ushakov"",""A. Navrotsky"",""Y. Yang"",""S. Stemmer"",""K. Kukli"",""M. Ritala"",""M. A. Leskel a"",""P. Fejes"",""A. Demkov"",""C. Wang"",""B.-Y. Nguyen"",""D. Triyoso"",""P. Tobin""],[""Gaskell, J. M."",""Jones, A. C."",""Aspinall, H. C."",""Taylor, S."",""Taechakumput, P."",""Chalker, P. R."",""Heys, P. N."",""Odedra, R.""],[""K. Kukli"",""M. Ritala"",""M. Leskel a"",""R. Lappalainen""],[""K. Kukli"",""M. Ritala"",""M. Leskel a""]]","[2001,1999,2010,2001,null,2004,2007,1998,1999]","[""J. Electrochem. Soc."",""J. Phys. IV"",""ACS Appl. Mater. Interfaces"",""Chem. Mater."","""",""Phys. Status Solidi B"",""Appl. Phys. Lett."",""Chem. Vap. Deposition"",""J. Appl. Phys.""]","[""K. Kukli, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 148, F35 (2001)."",""M. Ritala, M. Juppo, K. Kukli, A. Rahtu, and M. Leskel€a, J. Phys. IV France 9, Pr8/1021 (1999)."",""T. K. Minton, B. Wu, J. Zhang, N. F. Lindholm, A. I. Abdulagatov, J. O’Patchen, S. M. George, and M. D. Groner, ACS Appl. Mater. Interfaces 2, 2515 (2010)."",""A. Rahtu, K. Kukli, and M. Ritala, Chem. Mater. 13, 817 (2001)."",""K. Kukli, M. Ritala, and M. Leskel€a, Nanostruct. Mater. 8, 785 (1997)."",""S. V. Ushakov, A. Navrotsky, Y. Yang, S. Stemmer, K. Kukli, M. Ritala, M. A. Leskel€a, P. Fejes, A. Demkov, C. Wang, B.-Y. Nguyen, D. Triyoso, and P. Tobin, Phys. Status Solidi B 241, 2268 (2004)."",""J. M. Gaskell, A. C. Jones, H. C. Aspinall, S. Taylor, P. Taechakumput, P. R. Chalker, P. N. Heys, and R. Odedra, Appl. Phys. Lett. 91, 112912 (2007)."",""K. Kukli, M. Ritala, M. Leskel€a, and R. Lappalainen, Chem. Vap. Deposition 4, 29 (1998)."",""K. Kukli, M. Ritala, and M. Leskel€a, J. Appl. Phys. 86, 5656 (1999).""]" +,NbN,NbCl5,NH3,"933, 935, and 1630–1632","[933,935,1630,1631,1632]","["""","""",""10.1002/cvde.200906795"",""10.1021/la902289h"",""""]","[""Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method"",""Effects of intermediate zinc pulses on properties of TiN and NbN films deposited by atomic layer epitaxy"",""Etching of Nb2O5 Thin Films by NbCl5"",""Reaction Mechanism Studies on Atomic Layer Deposition of Nb2O5 from Nb(OEt)(5) and Water"",""NbCl (s) AS A PRECURSOR IN ATOMIC LAYER EPITAXY""]","[[""L. Hiltunen"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen""],[""M. Ritala"",""T. Asikainen"",""M. Leskel a"",""J. Jokinen"",""R. Lappalainen"",""M. Utriainen"",""L. Niinist o"",""E. Ristolainen""],[""Knapas, Kjell"",""Rahtu, Antti"",""Ritala, Mikko""],[""Knapas, Kjell"",""Rahtu, Antti"",""Ritala, Mikko""],[""K.-E. Elers"",""M. Ritala"",""M. 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Lappalainen"",""M. Utriainen"",""L. Niinist o"",""E. Ristolainen""],[""Knapas, Kjell"",""Rahtu, Antti"",""Ritala, Mikko""]]","[1997,2009]","[""Appl. Surf. Sci."",""Chem. Vap. Deposition""]","[""M. Ritala, T. Asikainen, M. Leskel€a, J. Jokinen, R. Lappalainen, M. Utriainen, L. Niinist€o, and E. Ristolainen, Appl. Surf. Sci. 120, 199 (1997)."",""K. Knapas, A. Rahtu, and M. Ritala, Chem. Vap. Deposition 15, 269 (2009).""]" +,,NbCl5,Me2NNH2,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +,,Nb(NtBu)(NEtMe)3,H2⚡,1633,[1633],"[""""]","[""The growth and diffusion barrier properties of atomic layer deposited NbN _x thin films""]","[[""Petra Al en"",""Mikko Ritala"",""Kai Arstila"",""Juhani Keinonen"",""Markku Leskel a""]]",[2005],"[""Thin Solid Films""]","[""P. Al\u0003en, M. Ritala, K. Arstila, J. Keinonen, and M. Leskel€a, Thin Solid Films 491, 235 (2005).""]" +42,Molybdenum,,,,[],[],[],[],[],[],[] +,Mo,MoCl5,Zn,1634,[1634],"[""""]","[""Evaluation of atomic layer deposited NbN and NbSiN as metal gate materials""]","[[""Van Hoornick, N."",""De Witte, H."",""Witters, T."",""Zhao, C."",""Conard, T."",""Huotari, H."",""Swerts, J."",""Schram, T."",""Maes, J. W."",""De Gendt, S."",""Heyns, M.""]]",[2006],"[""J. Electrochem. Soc.""]","[""N. Van Hoornick, H. De Witte, T. Witters, C. Zhao, T. Conard, H. Huotari, J. Swerts, T. Schram, J. W. Maes, S. De Gendt, and M. Heyns, J. Electrochem. Soc. 153, G437 (2006).""]" +,MoxN,MoCl5,NH3,933 and 1635,"[933,1635]","["""",""10.1088/0268-1242/25/7/075009""]","[""Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method"",""Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application""]","[[""L. Hiltunen"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen""],[""Hinz, J."",""Bauer, A. J."",""Frey, L.""]]","[1988,2010]","[""Thin Solid Films"",""Semicond. Sci. Technol.""]","[""L. Hiltunen, M. Leskel€a, M. M€akel€a, L. Niinist€o, E. Nyk€anen, and P. Soininen, Thin Solid Films 166, 149 (1988)."",""J. Hinz, A. J. Bauer, and L. Frey, Semicond. Sci. Technol. 25, 075009 (2010).""]" +,,MoCl5,Me2NNH2,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +,,Mo(NtBu)2(NMe2)2,NH3,1636–1640,"[1636,1637,1638,1639,1640]","["""","""","""","""",""""]","[""Deposition of molybdenum thin films by an alternate supply of MoCl _5 and Zn"",""Atomic layer deposition of molybdenum nitride thin films for Cu metallizations"",""Atomic Layer Deposition of Molybdenum Nitride from Bis(tert-butylimido)-bis(dimethylamido)molybdenum and Ammonia onto Several Types of Substrate Materials with Equal Growth per Cycle"",""Molybdenum nitride nanotubes"",""Bis(tert-butylimido)-bis(dialkylamido) Complexes of Molybdenum as Atomic Layer Deposition (ALD) Precursors for Molybdenum Nitride: the Effect of the Alkyl Group""]","[[""M. Juppo"",""M. Vehkam aki"",""M. Ritala"",""M. Leskela""],[""Petra Al en"",""Mikko Ritala"",""Kai Arstila"",""Juhani Keinonen"",""Markku Leskel a""],[""Miikkulainen, V."",""Suvanto, M."",""Pakkanen, T.A.""],[""Miikkulainen, V."",""Suvanto, M."",""Pakkanen, T. A.""],[""Miikkulainen, V."",""Suvanto, M."",""Pakkanen, T.A.""]]","[1998,2005,2007,2008,2008]","[""J. Vac. Sci. Technol., A"",""J. Electrochem. Soc."",""Chem. Mater."",""Thin Solid Films"",""Chem. Vap. Deposition""]","[""M. Juppo, M. Vehkam€aki, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. A 16, 2845 (1998)."",""P. Al\u0003en, M. Ritala, K. Arstila, J. Keinonen, and M. Leskel€a, J. Electrochem. Soc. 152, G361 (2005)."",""V. Miikkulainen, M. Suvanto, and T. Pakkanen, Chem. Mater. 19, 263 (2007)."",""V. Miikkulainen, M. Suvanto, and T. A. Pakkanen, Thin Solid Films 516, 6041 (2008)."",""V. Miikkulainen, M. Suvanto, and T. Pakkanen, Chem. Vap. Deposition 14, 71 (2008).""]" +,,Mo(NtBu)2(NEt2)2,NH3,1638 and 1640,"[1638,1640]","["""",""""]","[""Atomic Layer Deposition of Molybdenum Nitride from Bis(tert-butylimido)-bis(dimethylamido)molybdenum and Ammonia onto Several Types of Substrate Materials with Equal Growth per Cycle"",""Bis(tert-butylimido)-bis(dialkylamido) Complexes of Molybdenum as Atomic Layer Deposition (ALD) Precursors for Molybdenum Nitride: the Effect of the Alkyl Group""]","[[""Miikkulainen, V."",""Suvanto, M."",""Pakkanen, T.A.""],[""Miikkulainen, V."",""Suvanto, M."",""Pakkanen, T.A.""]]","[2007,2008]","[""Chem. Mater."",""Chem. Vap. Deposition""]","[""V. Miikkulainen, M. Suvanto, and T. Pakkanen, Chem. Mater. 19, 263 (2007)."",""V. Miikkulainen, M. Suvanto, and T. Pakkanen, Chem. Vap. Deposition 14, 71 (2008).""]" +44,Ruthenium,,,,[],[],[],[],[],[],[] +,Ru,Ru(chd)(ipmp),O2,1641,[1641],"[""""]","[""Thin films of MoN, WN, and perfluorinated silane deposited from dimethylamido precursors as contamination resistant coatings on micro-injection mold inserts""]","[[""Miikkulainen, V."",""Suvanto, M."",""Pakkanen, T. A."",""Siitonen, S."",""Karvinen, P."",""Kuittinen, M."",""Kisonen, H.""]]",[2008],"[""Surf. Coat. Technol.""]","[""V. Miikkulainen, M. Suvanto, T. A. Pakkanen, S. Siitonen, P. Karvinen, M. Kuittinen, and H. Kisonen, Surf. Coat. Technol. 202, 5103 (2008).""]" +"""",,RuCp2,O2,"95, 98, and 1642–1651","[95,98,1642,1643,1644,1645,1646,1647,1648,1649,1650,1651]","[""10.1021/jp803872s"",""10.1149/1.3250936"","""",""10.1149/1.3207867"","""","""","""","""","""","""","""",""""]","[""Selective-area atomic layer deposition using poly(methyl methacrylate) films as mask"",""Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer"",""Molybdenum nitride thin films on micro- and nanopatterned substrates: Atomic layer deposition and applications"",""Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2"",""Reaction mechanism studies on atomic layer deposition of ruthenium and platinum"",""Ruthenium thin films grown by atomic layer deposition"",""Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature"",""Investigation of atomic-layer-deposited ruthenium nanocrystal growth on SiO2 and Al2O3 films"",""In situ Auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces"",""Ruthenium/aerogel nanocomposites via atomic layer deposition"",""Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications"",""Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode""]","[[""F arm, Elina"",""Kemell, Marianna"",""Ritala, Mikko"",""Leskel a, Markku""],[""F arm, Elina"",""Kemell, Marianna"",""Santala, Eero"",""Ritala, Mikko"",""Leskel a, Markku""],[""V. Miikkulainen""],[""Eom, Tae-Kwang"",""Sari, Windu"",""Choi, Kyu-Jeong"",""Shin, Woong-Chul"",""Kim, Jae Hyun"",""Lee, Do-Joong"",""Kim, Ki-Bum"",""Sohn, Hyunchul"",""Kim, Soo-Hyun""],[""T. Aaltonen"",""A. Rahtu"",""M. Ritala"",""M. Leskel a""],[""T. Aaltonen"",""P. Al en"",""M. Ritala"",""M. Leskel a""],[""T. Aaltonen"",""M. Ritala"",""Y. L. Tung"",""Y. Chi"",""K. Arstila"",""K. Meinander"",""M. Leskel a""],[""Zhang, M."",""Chen, W."",""Ding, S. J."",""Wang, X. P."",""Zhang, D. W."",""Wang, L. K.""],[""Park, K. J."",""Terry, D. B."",""Stewart, S. M."",""Parsons, G. N.""],[""Biener, J."",""Baumann, T. F."",""Wang, Y. M."",""Nelson, E. J."",""Kucheyev, S. O."",""Hamza, A. V."",""Kemell, M."",""Ritala, M."",""Leskel a, M.""],[""Zhang, M."",""Chen, W."",""Ding, S. J."",""Liu, Z. Y."",""Huang, Y."",""Liao, Z. W."",""Zhang, D. W.""],[""Park, S. J."",""Kim, W. H."",""Lee, H. B. R."",""Maeng, W. J."",""Kim, H.""]]","[2008,2010,2008,2009,2003,2003,2004,2007,2007,2007,2008,2008]","[""J. Phys. 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V."",""Kemell, M."",""Ritala, M."",""Leskel a, M.""]]",[2007],"[""Nanotechnology""]","[""J. Biener, T. F. Baumann, Y. M. Wang, E. J. Nelson, S. O. Kucheyev, A. V. Hamza, M. Kemell, M. Ritala, and M. Leskel€a, Nanotechnology 18, 055303 (2007).""]" +,,Ru(CpEt)2,O2,1649 and 1652–1659,"[1649,1652,1653,1654,1655,1656,1657,1658,1659]","["""","""",""10.1021/cm902904u"","""","""","""","""","""",""""]","[""Ruthenium/aerogel nanocomposites via atomic layer deposition"",""Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen"",""Atomic Layer Deposition (ALD) Co-Deposited Pt-Ru Binary and Pt Skin Catalysts for Concentrated Methanol Oxidation"",""Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer"",""Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition"",""Improvement of the morphological stability by stacking RuO2 on ru thin films with atomic layer deposition"",""Formation of ru nanotubes by atomic layer deposition onto an anodized aluminum oxide template"",""Atomic layer deposition of Ru nanocrystals with a tunable density and size for charge storage memory device application"",""Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition""]","[[""Biener, J."",""Baumann, T. 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W.""],[""Ko, Myoung-Gyun"",""Kim, Woong-Sun"",""Park, Sang-Kyun"",""Kim, Heon-Do"",""Park, Jong-Wan""],[""Xie, Qi"",""Jiang, Yu-Long"",""Musschoot, Jan"",""Deduytsche, Davy"",""Detavernier, Christophe"",""Van Meirhaeghe, Roland L."",""Van den Berghe, Sven"",""Ru, Guo-Ping"",""Li, Bing-Zong"",""Qu, Xin-Ping""],[""Son, J. Y."",""Maeng, W. J."",""Kim, Woo-Hee"",""Shin, Y. H."",""Kim, Hyungjun""],[""Kumar, Sumit"",""Greenslit, Daniel"",""Chakraborty, Tonmoy"",""Eisenbraun, Eric T.""]]","[2005,2007,2007,2009,2010,2005,2004,2004,2006,2008,2008,2009,2009,2009]","[""Integr. Ferroelectr."",""Nanotechnology"",""J. Electrochem. Soc."",""J. Electrochem. Soc."",""J. Appl. Phys."",""Electrochem. Solid-State Lett."",""Electrochem. Solid-State Lett."",""J. Electrochem. Soc."",""Appl. Phys. Lett."",""J. Electrochem. Soc."",""J. Korean Phys. Soc."",""Thin Solid Films"",""Thin Solid Films"",""J. Vac. Sci. Technol., A""]","[""N. J. Seong, S. G. Yoon, S. J. Yeom, H. K. Woo, D. S. Kil, J. S. Roh, and H. C. 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W.""],[""Choi, Bum Ho"",""Lim, Yong Hwan"",""Lee, Jong Ho"",""Kim, Young Baek"",""Lee, Ho-Nyun"",""Lee, Hong Kee""]]","[2006,2010]","[""J. Electrochem. Soc."",""Microelectron. Eng.""]","[""S. H. Kwon, O. K. Kwon, J. S. Min, and S. W. Kang, J. Electrochem. Soc. 153, G578 (2006)."",""B. H. Choi, Y. H. Lim, J. H. Lee, Y. B. Kim, H.-N. Lee, and H. K. Lee, Microelectron. Eng. 87, 1391 (2010).""]" +,,Ru(CpEt)2,H2⚡ + O2,900,[900],"[""""]","[""Structurally and electrically uniform deposition of high-k TiO2 thin films on a Ru electrode in three-dimensional contact holes using atomic layer deposition""]","[[""Kim, S. K."",""Kim, K. M."",""Kwon, O. S."",""Lee, S. W."",""Jeon, C. B."",""Park, W. Y."",""Hwang, C. S."",""Jeong, J.""]]",[2005],"[""Electrochem. Solid-State Lett.""]","[""S. K. Kim, K. M. Kim, O. S. Kwon, S. W. Lee, C. B. Jeon, W. Y. Park, C. S. Hwang, and J. Jeong, Electrochem. Solid-State Lett. 8, F59 (2005).""]" +,,Ru(CpEt)(dmp),O2,906 and 1672–1677,"[906,1672,1673,1674,1675,1676,1677]","[""10.1149/1.3125713"",""10.1016/j.mee.2009.11.020"",""10.1149/1.2975341"","""","""","""",""10.1021/cm901032q""]","[""Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications"",""Texture of atomic layer deposited ruthenium"",""Improvement of copper diffusion barrier properties of tantalum nitride films by incorporating ruthenium using PEALD"",""Atomic layer deposition of Ru thin films using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a liquid injection system"",""Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition"",""The role of the methyl and hydroxyl groups of low-k dielectric films on the nucleation of ruthenium by ALD"",""Atomic Layer Deposition of Ruthenium Nanoparticles Using a Low-Density Dielectric Film as Template Structure""]","[[""Choi, Gyu-Jin"",""Kim, Seong Keun"",""Lee, Sang Young"",""Park, Woo Young"",""Seo, Minha"",""Choi, Byung Joon"",""Hwang, Cheol Seong""],[""Musschoot, J."",""Xie, Q."",""Deduytsche, D."",""De Keyser, K."",""Longrie, D."",""Haemers, J."",""Van den Berghe, S."",""Van Meirhaeghe, R. L."",""D'Haen, J."",""Detavernier, C.""],[""Kim, Sung-Wook"",""Kwon, Se-Hun"",""Jeong, Seong-Jun"",""Kang, Sang-Won""],[""Kim, S. K."",""Lee, S. Y."",""Lee, S. W."",""Hwang, G. W."",""Hwang, C. S."",""Lee, J. W."",""Jeong, J.""],[""Woo-Hee Kim"",""Sang-Joon Park"",""Jong-Yeog Son"",""Hyungjun Kim""],[""Heo, J."",""Won, S. J."",""Eom, D."",""Lee, S. Y."",""Ahn, Y. B."",""Hwang, C. S."",""Kim, H. J.""],[""Heo, Jaeyeong"",""Eom, Dail"",""Lee, Sang Young"",""Won, Seok-Jun"",""Park, Sanghyun"",""Hwang, Cheol Seong"",""Kim, Hyeong Joon""]]","[2009,2010,2008,2007,2008,2008,2009]","[""J. Electrochem. Soc."",""Microelectron. Eng."",""J. Electrochem. Soc."",""J. Electrochem. Soc."",""Nanotechnology"",""Electrochem. Solid-State Lett."",""Chem. Mater.""]","[""G.-J. Choi, S. K. Kim, S. Y. Lee, W. Y. Park, M. Seo, B. J. Choi, and C. S. Hwang, J. Electrochem. Soc. 156, G71 (2009)."",""J. Musschoot, Q. Xie, D. Deduytsche, K. De Keyser, D. Longrie, J. Haemers, S. Van den Berghe, R. L. Van Meirhaeghe, J. D’Haen, and C. Detavernier, Microelectron. Eng. 87, 1879 (2010)."",""S.-W. Kim, S.-H. Kwon, S.-J. Jeong, and S.-W. Kang, J. Electrochem. Soc. 155, H885 (2008)."",""S. K. Kim, S. Y. Lee, S. W. Lee, G. W. Hwang, C. S. Hwang, J. W. Lee, and J. Jeong, J. Electrochem. Soc. 154, D95 (2007)."",""W.-H. Kim, S.-J. Park, J.-Y. Son, and H. Kim, Nanotechnology 19, 045302 (2008)."",""J. Heo, S. J. Won, D. Eom, S. Y. Lee, Y. B. Ahn, C. S. Hwang, and H. J. Kim, Electrochem. Solid-State Lett. 11, H210 (2008)."",""J. Heo, D. Eom, S. Y. Lee, S.-J. Won, S. Park, C. S. Hwang, and H. J. Kim, Chem. Mater. 21, 4006 (2009).""]" +,,Ru(CpEt)(dmp),q,1678,[1678],"[""10.1021/nl101567m""]","[""Supported Ru-Pt Bimetallic Nanoparticle Catalysts Prepared by Atomic Layer Deposition""]","[[""Christensen, Steven T."",""Feng, Hao"",""Libera, Joseph L."",""Guo, Neng"",""Miller, Jeffrey T."",""Stair, Peter C."",""Elam, Jeffrey W.""]]",[2010],"[""Nano Lett.""]","[""S. T. Christensen, H. Feng, J. L. Libera, N. Guo, J. T. Miller, P. C. Stair, and J. W. Elam, Nano Lett. 10, 3047 (2010).""]" +,,Ru(CpEt)(pyr),NH3⚡,1679,[1679],"[""10.1021/cm100057y""]","[""Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition""]","[[""Kim, Seong Keun"",""Han, Jeong Hwan"",""Kim, Gun Hwan"",""Hwang, Cheol Seong""]]",[2010],"[""Chem. Mater.""]","[""S. K. Kim, J. H. Han, G. H. Kim, and C. S. Hwang, Chem. Mater. 22, 2850 (2010).""]" +,,RuCp(CpCH(Me)\-(NMe2)),O2,1680,[1680],"[""10.1016/j.susc.2009.02.003""]","[""Surface chemistry of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru on polycrystalline Ta""]","[[""Thom, Kelly M."",""Ekerdt, J. G.""]]",[2009],"[""Surf. Sci.""]","[""K. M. Thom and J. G. Ekerdt, Surf. Sci. 603, 921 (2009).""]" +,,RuCp(CO)2Et,O2,1681 and 1682,"[1681,1682]","[""10.1149/1.3166184"",""10.1149/1.3251285""]","[""Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications"",""High Temperature Atomic Layer Deposition of Ruthenium from N,N-Dimethyl-1-ruthenocenylethylamine""]","[[""Wu, L."",""Eisenbraun, E.""],[""Kukli, Kaupo"",""Ritala, Mikko"",""Kemell, Marianna"",""Leskel a, Markku""]]","[2009,2010]","[""J. Electrochem. Soc."",""J. Electrochem. Soc.""]","[""L. Wu and E. Eisenbraun, J. Electrochem. Soc. 156, H734 (2009)."",""K. Kukli, M. Ritala, M. Kemell, and M. Leskel€a, J. Electrochem. Soc. 157, D35 (2010).""]" +,,RuCp(CO)2Et,O2⚡,1681,[1681],"[""10.1149/1.3166184""]","[""Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications""]","[[""Wu, L."",""Eisenbraun, E.""]]",[2009],"[""J. Electrochem. Soc.""]","[""L. Wu and E. Eisenbraun, J. Electrochem. Soc. 156, H734 (2009).""]" +,,Ru(od)3,O2,1683,[1683],"[""""]","[""Thermal and Remote Plasma ALD of Ru from CpRu(CO) _2 Et and O _2""]","[[""Leick, N."",""Verkuijlen, R. O. F."",""Langereis, E."",""Rushworth, S."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2009],"[""Proceedings of the 56th international American Vacuum Society Symposium & Exhibition (AVS 56) 8-13 November 2009, San Jose, California. - New York, NY : AVS, 2009. - p. TF2-MoM1-20""]","[""N. Leick, R. O. F. Verkuijlen, E. Langereis, S. Rushworth, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, in Proceedings of the 56th international American Vacuum Society Symposium & Exhibition (AVS 56), 8–13 November 2009, San Jose, California (AVS, New York, NY, 2009), p. TF2-MoM1-20.""]" +,,Ru(thd)3,H2,1684,[1684],"[""10.1021/cm903793u""]","[""Atomic Layer Deposition of Ru/RuO2 Thin Films Studied by In situ Infrared Spectroscopy""]","[[""Park, S. K."",""Kanjolia, R."",""Anthis, J."",""Odedra, R."",""Boag, N."",""Wielunski, L."",""Chabal, Y. J.""]]",[2010],"[""Chem. Mater.""]","[""S. K. Park, R. Kanjolia, J. Anthis, R. Odedra, N. Boag, L. Wielunski, and Y. J. Chabal, Chem. Mater. 22, 4867 (2010).""]" +,,Ru(thd)3,O2,1644 and 1685–1687,"[1644,1685,1686,1687]","["""","""","""",""""]","[""Reaction mechanism studies on atomic layer deposition of ruthenium and platinum"",""Ruthenium Oxide Nanotube Arrays Fabricated by Atomic Layer Deposition Using a Carbon Nanotube Template"",""Deposition of palladium and ruthenium eta -diketonates on alumina and silica supports in gas and liquid phase"",""Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd) _3 and Oxygen""]","[[""T. Aaltonen"",""A. Rahtu"",""M. Ritala"",""M. Leskel a""],[""Y.-S. Min"",""E. J. Bae"",""K. S. Jeong"",""Y. J. Cho"",""J.-H. Lee"",""W. B. Choi"",""G.-S. Park""],[""M. Lashdaf"",""T. Hatanp a a"",""A. O. I. Krause"",""J. Lahtinen"",""M. Lindblad"",""M. Tiitta""],[""T. Aaltonen"",""M. Ritala"",""K. Arstila"",""J. Keinonen"",""M. Leskel a""]]","[2003,2003,2003,2004]","[""Electrochem. Solid-State Lett."",""Adv. Mater."",""Appl. Catal., A."",""Chem. Vap. Deposition""]","[""T. Aaltonen, A. Rahtu, M. Ritala, and M. Leskel€a, Electrochem. Solid- State Lett. 6, C130 (2003)."",""Y.-S. Min, E. J. Bae, K. S. Jeong, Y. J. Cho, J.-H. Lee, W. B. Choi, and G.-S. Park, Adv. Mater. 15, 1019 (2003)."",""M. Lashdaf, T. Hatanp€a€a, A. O. I. Krause, J. Lahtinen, M. Lindblad, and M. Tiitta, Appl. Catal., A 241, 51 (2003)."",""T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskel€a, Chem. Vap. Deposition 10, 215 (2004).""]" +,,Ru(tBuAMD)2\-(CO)2,O2,1688,[1688],"[""10.1021/jp9021882""]","[""Growth of Noble Metal Ru Thin Films by Liquid Injection Atomic Layer Deposition""]","[[""Kim, Seong Keun"",""Hoffmann-Eifert, Susanne"",""Waser, Rainer""]]",[2009],"[""J. Phys. Chem. C""]","[""S. K. Kim, S. Hoffmann-Eifert, and R. Waser, J. Phys. Chem. C 113, 11329 (2009).""]" +,,Ru(tBuAMD)2\-(CO)2,NH3,1689 and 1690,"[1689,1690]","["""",""10.1002/cvde.200906789""]","[""Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)(2) Precursor and Oxygen Gas"",""Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor""]","[[""Kim, Woo-Hee"",""Park, Sang-Joon"",""Kim, Do Young"",""Kim, Hyungjun""],[""Wang, Hongtao"",""Gordon, Roy G."",""Alvis, Roger"",""Ulfig, Robert M.""]]","[2009,2009]","[""J. Korean Phys. Soc."",""Chem. Vap. Deposition""]","[""W.-H. Kim, S.-J. Park, D. Y. Kim, and H. Kim, J. Korean Phys. Soc. 55, 32 (2009)."",""H. Wang, R. G. Gordon, R. Alvis, and R. M. Ulfig, Chem. Vap. Deposition 15, 312 (2009).""]" +,,RuO4,H2,1691,[1691],"[""""]","[""Vapor deposition of ruthenium from an amidinate precursor""]","[[""Li, H."",""Farmer, D. B."",""Gordon, R. G."",""Lin, Y."",""Vlassak, J.""]]",[2007],"[""J. Electrochem. Soc.""]","[""H. Li, D. B. Farmer, R. G. Gordon, Y. Lin, and J. Vlassak, J. Electrochem. Soc. 154, D642 (2007).""]" +,RuO2,Ru(CpEt)2,O2,"1652, 1654, 1687, and 1692","[1652,1654,1687,1692]","["""","""","""",""""]","[""Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen"",""Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer"",""Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd) _3 and Oxygen"",""High density Ru nanocrystal deposition for nonvolatile memory applications""]","[[""Sang-Joon Park"",""Woo-Hee Kim"",""W.J. Maeng"",""Y.S. Yang"",""C.G. Park"",""Hyungjun Kim"",""Kook-Nyung Lee"",""Suk-Won Jung"",""W.K. Seong""],[""O.-K. Kwon"",""J.-H. Kim"",""H.-S. Park"",""S.-W. Kang""],[""T. Aaltonen"",""M. Ritala"",""K. Arstila"",""J. Keinonen"",""M. Leskel a""],[""Farmer, D. B."",""Gordon, R. G.""]]","[2008,2004,2004,2007]","[""Thin Solid Films"",""J. Electrochem. Soc."",""Chem. Vap. Deposition"",""J. Appl. Phys.""]","[""S.-J. Park, W.-H. Kim, W. 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Eng. 83, 2248 (2006).""]" +45,Rhodium,,,,[],[],[],[],[],[],[] +,Rh,Rh(acac)3,O2,1653 and 1694,"[1653,1694]","[""10.1021/cm902904u"",""""]","[""Atomic Layer Deposition (ALD) Co-Deposited Pt-Ru Binary and Pt Skin Catalysts for Concentrated Methanol Oxidation"",""Modified atomic layer deposition of RuO2 thin films for capacitor electrodes""]","[[""Jiang, Xirong"",""Guer, Turgut N."",""Prinz, Friedrich B."",""Bent, Stacey F.""],[""Kim, J. H."",""Kil, D. S."",""Yeom, S. J."",""Roh, J. S."",""Kwak, N. J."",""Kim, J. W.""]]","[2010,2007]","[""Chem. Mater."",""Appl. Phys. Lett.""]","[""X. Jiang, T. N. Guer, F. B. Prinz, and S. F. Bent, Chem. Mater. 22, 3024 (2010)."",""J. H. Kim, D. S. Kil, S. J. Yeom, J. S. Roh, N. J. Kwak, and J. W. Kim, Appl. Phys. Lett. 91, 052908 (2007).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_016_table_011/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_016_table_011/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..5a9e5e322f146f7c57c9e2a5368b8934ae80ab90 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_016_table_011/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Rh2O3,Rh(acac)3,O3,1695,[1695],"[""10.1016/j.tsf.2009.12.063""]","[""Growth of RuO2 thin films by liquid injection atomic layer deposition""]","[[""Hu sekov a, K."",""Dobro cka, E."",""Rosov a, A."",""Solt ys, J."",""Satka, A."",""Fillot, F."",""Fr ohlich, K.""]]",[2010],"[""Thin Solid Films""]","[""K. Hu\u0004sekov\u0003a, E. Dobrocˇka, A. Rosov\u0003a, J. \u0004Solt\u0003ys, A. \u0004Satka, F. Fillot, and K. Fr€ohlich, Thin Solid Films 518, 4701 (2010).""]" +46,Palladium,,,,[],[],[],[],[],[],[] +,Pd,Pd(thd)2,H2,1684,[1684],"[""10.1021/cm903793u""]","[""Atomic Layer Deposition of Ru/RuO2 Thin Films Studied by In situ Infrared Spectroscopy""]","[[""Park, S. K."",""Kanjolia, R."",""Anthis, J."",""Odedra, R."",""Boag, N."",""Wielunski, L."",""Chabal, Y. J.""]]",[2010],"[""Chem. Mater.""]","[""S. K. Park, R. Kanjolia, J. Anthis, R. Odedra, N. Boag, L. Wielunski, and Y. J. Chabal, Chem. Mater. 22, 4867 (2010).""]" +,,Pd(thd)2,O2,1136,[1136],"[""""]","[""Alloying in Cu/Pd nanoparticle catalysts""]","[[""A. M. Molenbroek"",""S. Haukka"",""B. S. Clausen""]]",[1998],"[""J. Phys. Chem. B""]","[""A. M. Molenbroek, S. Haukka, and B. S. Clausen, J. Phys. Chem. B 102, 10680 (1998).""]" +,,Pd(hfac)2,H2,1696–1698,"[1696,1697,1698]","[""10.1149/1.1940507"",""10.1149/1.3190157"",""""]","[""ALD of Rhodium Thin Films from Rh(acac) _3 and Oxygen"",""Study on Atomic Layer Deposition of Amorphous Rhodium Oxide Thin Films"",""Substrate-independent palladium atomic layer deposition""]","[[""Titta Aaltonen"",""Mikko Ritala"",""Markku Leskel a""],[""H am al ainen, Jani"",""Munnik, Frans"",""Ritala, Mikko"",""Leskel a, Markku""],[""J. J. Senkevich"",""F. Tang"",""D. Rogers"",""J. T. Drotar"",""C. Jezewski"",""W. A. Lanford"",""G. C. Wang"",""T. M. Lu""]]","[2005,2009,2003]","[""Electrochem. Solid-State Lett."",""J. Electrochem. Soc."",""Chem. Vap. Deposition""]","[""T. Aaltonen, M. Ritala, and M. Leskel€a, Electrochem. Solid-State Lett. 8, C99 (2005)."",""J. H€am€al€ainen, F. Munnik, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 156, D418 (2009)."",""J. J. Senkevich, F. Tang, D. Rogers, J. T. Drotar, C. Jezewski, W. A. Lanford, G. C. Wang, and T. M. Lu, Chem. Vap. Deposition 9, 258 (2003).""]" +,,Pd(hfac)2,H2⚡,1699 and 1700,"[1699,1700]","["""",""""]","[""Atomic layer deposition of Pd on TaN for Cu electroless plating"",""Atomic layer deposition of Pd on an oxidized metal substrate""]","[[""Kim, Y."",""Ten Eyck, G. A."",""Ye, D. X."",""Jezewski, C."",""Karabacak, T."",""Shin, H. S."",""Senkevich, J. J."",""Lu, T. M.""],[""Ten Eyck, G. A."",""Pimanpang, S."",""Bakhru, H."",""Lu, T. M."",""Wang, G. C.""]]","[2005,2006]","[""J. Electrochem. Soc."",""Chem. Vap. Deposition""]","[""Y. Kim, G. A. Ten Eyck, D. X. Ye, C. Jezewski, T. Karabacak, H. S. Shin, J. J. Senkevich, T. M. Lu, J. Electrochem. Soc. 152, C376 (2005)."",""G. A. Ten Eyck, S. Pimanpang, H. Bakhru, T. M. Lu, and G. C. Wang, Chem. Vap. Deposition 12, 290 (2006).""]" +,,Pd(hfac)2,H2 + N2⚡,1701,[1701],"[""""]","[""Surface characterization of copper electroless deposition on atomic layer deposited palladium on iridium and tungsten""]","[[""Kim, Y. S."",""Shin, J."",""Cho, J. H."",""Ten Eyck, G. A."",""Liu, D. L."",""Pimanpang, S."",""Lu, T. M."",""Senkevich, J. J."",""Shin, H. S.""]]",[2006],"[""Surf. Coat. Technol.""]","[""Y. S. Kim, J. Shin, J. H. Cho, G. A. Ten Eyck, D. L. Liu, S. Pimanpang, T. M. Lu, J. J. Senkevich, and H. S. Shin, Surf. Coat. Technol. 200, 5760 (2006).""]" +,,Pd(hfac)2,HCOCOOH,1696,[1696],"[""10.1149/1.1940507""]","[""ALD of Rhodium Thin Films from Rh(acac) _3 and Oxygen""]","[[""Titta Aaltonen"",""Mikko Ritala"",""Markku Leskel a""]]",[2005],"[""Electrochem. Solid-State Lett.""]","[""T. Aaltonen, M. Ritala, and M. Leskel€a, Electrochem. Solid-State Lett. 8, C99 (2005).""]" +,,Pd(hfac)2,HCHOm,"368, 396, 1011, and 1702–1704","[368,396,1011,1702,1703,1704]","[""10.1016/j.electacta.2010.02.043"",""10.1002/smll.201000169"","""","""","""",""""]","[""Low-temperature atomic layer deposited Al2O3 thin film on layer structure cathode for enhanced cycleability in lithium-ion batteries"",""Flexible Replication Technique for High-Aspect-Ratio Nanostructures"",""Atomic layer deposition for the conformal coating of nanoporous materials"",""Direct plating of Cu on Pd plasma enhanced atomic layer deposition coated TaN barrier"",""Plasma-enhanced atomic layer deposition of palladium on a polymer substrate"",""Atomic layer deposition of palladium films on Al _2 O _3 surfaces""]","[[""Lee, Jyh-Tsung"",""Wang, Fu-Ming"",""Cheng, Chin-Shu"",""Li, Chia-Chen"",""Lin, Chun-Hao""],[""Szeghalmi, Adriana"",""Sklarek, Kornelia"",""Helgert, Michael"",""Brunner, Robert"",""Erfurth, Wilfried"",""G osele, Ulrich"",""Knez, Mato""],[""Elam, J. 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Deposition 13, 408 (2007).""]" +48,Cadmium,,,,[],[],[],[],[],[],[] +,CdS,Cd,S,1707 and 1708,"[1707,1708]","["""",""""]","[""Liquid injection atomic layer deposition of silver nanoparticles"",""GROWTH AND CHARACTERIZATION OF CdS EPILAYERS ON (100) GaAs BY ATOMIC LAYER EPITAXY""]","[[""P R Chalker"",""S Romani"",""P A Marshall"",""M J Rosseinsky"",""S Rushworth"",""P A Williams""],[""T. Tadokoro"",""S. Ohta"",""T. Ishiguro"",""Y. Ichinose"",""S. Kobayashi"",""N. Yamamoto""]]","[2010,1993]","[""Nanotechnology"",""J. Cryst. Growth""]","[""P. R. Chalker, S. Romani, P. A. Marshall, M. J. Rosseinsky, S. Rushworth, and P. A. Williams, Nanotechnology 21, 405602 (2010)."",""T. Tadokoro, S. Ohta, T. Ishiguro, Y. Ichinose, S. Kobayashi, and N. Yamamoto, J. Cryst. Growth 130, 29 (1993).""]" +,,CdCl2,H2S,1300,[1300],"[""""]","[""ALE growth of ZnS _ 1-x Se _x thin films by substituting surface sulfur with elemental selenium""]","[[""J. Ihanus"",""M. Ritala"",""M. Leskel a"",""E. 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Slater"",""M. Han"",""J. Moryl"",""Osgood, Jr., R. M.""],[""Y. Luo"",""D. Slater"",""M. Han"",""J. Moryl"",""Osgood, Jr., R. M.""],[""M. Han"",""Y. Luo"",""J. E. Moryl"",""Osgood, Jr., R. M."",""J. G. Chen""],[""M. Han"",""Y. Luo"",""J. E. Moryl"",""Osgood, Jr., R. M.""],[""Y. Luo"",""M. Han"",""D. A. Slater"",""Osgood, Jr., R. M.""]]","[2001,2000,1997,1998,1998,1999,2000]","[""J. Cryst. Growth"",""Zr. Prikl. Khim."",""Appl. Phys. Lett."",""Langmuir"",""Surf. Sci."",""Surf. Sci."",""J. Vac. Sci. Technol., A""]","[""M. Yokoyama and N.-T. Chen, J. Cryst. Growth 223, 369 (2001)."",""Yu. K. Ezhovskii and A. I. Klyuikov, Zh. Prikl. Khim. 73, 881 (2000) [Russ. J. Appl. Chem. 73, 933 (2000)]."",""Y. Luo, D. Slater, M. Han, J. Moryl, and R. M. Osgood, Jr., Appl. Phys. Lett. 71, 3799 (1997)."",""Y. Luo, D. Slater, M. Han, J. Moryl, and R. M. Osgood, Jr., Langmuir 14, 1493 (1998)."",""M. Han, Y. Luo, J. E. Moryl, R. M. Osgood, Jr., and J. G. Chen, Surf. Sci. 415, 251 (1998)."",""M. Han, Y. 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A 18, 438 (2000).""]" +,CdSe,Cd,Se,"1287, 1708, and 1715–1722","[1287,1708,1715,1716,1717,1718,1719,1720,1721,1722]","["""","""",""10.1021/cm100874f"","""","""","""","""","""","""",""""]","["""",""GROWTH AND CHARACTERIZATION OF CdS EPILAYERS ON (100) GaAs BY ATOMIC LAYER EPITAXY"",""Atomic Layer Deposition of CdS Films"",""The structure and strain relief in epitaxially grown CdSe on ZnSe by atomic layer epitaxy"",""Photoluminescence properties of single CdSe quantum dots in ZnSe obtained by self-organized growth"",""Self-organized CdSe/ZnSe quantum dots on a ZnSe(111)A surface"",""Growth and time-resolved photoluminescence study of self-organized CdSe quantum dots in ZnSe"",""Fabrication of low-dimension CdSe structures by atomic layer epitaxy"",""Growth and characterization of ultra-thin quantum wells of II�-VI semiconductors for optoelectronic applications"",""Growth of CdSe - and CdTe -Based Nanostructures on Silicon""]","[[""T. Suntola"",""J. Antson""],[""T. Tadokoro"",""S. Ohta"",""T. Ishiguro"",""Y. Ichinose"",""S. Kobayashi"",""N. Yamamoto""],[""Bakke, Jonathan R."",""Jung, Hee Joon"",""Tanskanen, Jukka T."",""Sinclair, Robert"",""Bent, Stacey F.""],[""Y. Z. Feng"",""S. P. Guo""],[""M. Y. Shen"",""T. Goto"",""E. Kurtz"",""Z. Zhu"",""T. Yao""],[""E. Kurtz"",""H. D. Jung"",""T. Hanada"",""Z. Zhu"",""T. Sekiguchi"",""T. Yao""],[""E. Kurtz"",""T. Sekiguchi"",""Z. Zhu"",""T. Yao"",""J. X. Shen"",""Y. Oka"",""M. Y. Shen"",""T. Goto""],[""D. P. Mikhaevich"","". K. Ezhovskii""],[""I. Hern andez-Calder on"",""M. Garc ia-Rocha"",""P. D iaz-Arencibia""],["". K. Ezhovskii"",""D. P. Mikhaevich""]]","[null,1993,2010,1996,1998,1998,1999,2003,2004,2004]","["""",""J. Cryst. Growth"",""Chem. Mater."",""J. Mater. Sci. Lett."",""J. Phys.: Condens. Matter"",""J. Cryst. Growth"",""Superlattices Microstruct."",""Zh. Prikl. Khim."",""Phys. Status Solidi B"",""Neorg. Mater.""]","[""T. Suntola and J. Antson, U.S. patent 4,058,430 (15 November, 1977)."",""T. Tadokoro, S. Ohta, T. Ishiguro, Y. Ichinose, S. Kobayashi, and N. Yamamoto, J. Cryst. Growth 130, 29 (1993)."",""J. R. Bakke, H. J. Jung, J. T. Tanskanen, R. Sinclair, and S. F. Bent, Chem. Mater. 22, 4669 (2010)."",""Y. Z. Feng and S. P. Guo, J. Mater. Sci. Lett. 15, 1824 (1996)."",""M. Y. Shen, T. Goto, E. Kurtz, Z. Zhu, and T. Yao, J. Phys.: Condens. Matter 10, L171 (1998)."",""E. Kurtz, H. D. Jung, T. Hanada, Z. Zhu, T. Sekiguchi, and T. Yao, J. Cryst. Growth 184/185, 242 (1998)."",""E. Kurtz, T. Sekiguchi, Z. Zhu, T. Yao, J. X. Shen, Y. Oka, M. Y. Shen, and T. Goto, Superlattices Microstruct. 25, 119 (1999)."",""D. P. Mikhaevich and Yu. K. Ezhovskii, Zh. Prikl. Khim. 76, 1238 (2003) [Russ. J. Appl. Chem. 76, 1197 (2003)]."",""I. Hern\u0003andez-Calder\u0003on, M. Garc\u0003ıa-Rocha, and P. D\u0003ıaz-Arencibia, Phys. Status Solidi B 241, 558 (2004)."",""Yu. K. Ezhovskii and D. P. Mikhaevich, Neorg. Mater. 40, 1043 (2004) [Inorg. Mater. 40, 909 (2004)].""]" +,,CdMe2,H2Se,1315 and 1346,"[1315,1346]","["""",""""]","[""ALE growth and optical characterization of ZnSe/ZnS strained quantum well structures on Si substrate"",""\""MBE-Like\"" and \""CVD-like\"" atomic layer epitaxy of ZnSe in MOMBE system""]","[[""M. Yokoyama"",""N.-T. Chen""],[""A. Yoshikawa"",""T. Okamoto"",""H. Yasuda"",""S. Yamaga"",""H. Kasai""]]","[2001,1990]","[""J. Cryst. Growth"",""J. Cryst. Growth""]","[""M. Yokoyama and N.-T. Chen, J. Cryst. Growth 223, 369 (2001)."",""A. Yoshikawa, T. Okamoto, H. Yasuda, S. Yamaga, and H. Kasai, J. Cryst. Growth 101, 86 (1990).""]" +,CdTe,Cd,Te,"70, 1042–1047, 1049–1051, 1338, 1360, 1364, 1366, 1708, 1720, 1721, and 1723–1747","[70,1042,1043,1044,1045,1046,1047,1049,1050,1051,1338,1360,1364,1366,1708,1720,1721,1723,1724,1725,1726,1727,1728,1729,1730,1731,1732,1733,1734,1735,1736,1737,1738,1739,1740,1741,1742,1743,1744,1745,1746,1747]","["""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1016/j.jcrysgro.2007.06.030"","""","""","""",""10.1016/j.jcrysgro.2010.03.002"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""Atomic layer epitaxy of CdTe , MgTe and MnTe growth of CdTe/MnTe tilted superlattices on vicinal surfaces"",""ATOMIC LAYER EPITAXY OF Cd _ 1-X Mn _X Te GROWN ON CdTe (111) B SUBSTRATES"",""GROWTH OF Cd _ 1-X Mn _X Te FILMS WITH 0 < x < 0.9 BY ATOMIC LAYER EPITAXY"",""ATOMIC LAYER EPITAXY OF CdTe-ZnTe AND CdTe-MnTe SUPERLATTICES"",""ATOMIC LAYER EPITAXY OF II--VI QUANTUM-WELLS AND SUPERLATTICES"",""Atomic layer epitaxy of CdTe and MnTe"",""Growth of CdTe/MnTe tilted and serpentine lattices on vicinal surfaces"",""Comparison between atomic layer epitaxy grown and molecular beam epitaxy grown CdTe / MnTe superlattices: a structural and optical study"",""Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study"",""Structural and optical properties of CdTe/MnTe tilted superlattices grown on vicinal surfaces"",""Atomic layer deposition of thin films of ZnSe ---structural and optical characterization"",""SELF-LIMITING GROWTH WITH 0.5 MONOLAYER PER CYCLE IN ATOMIC LAYER EPITAXY OF ZnTe"",""Atomic layer epitaxy of ZnTe by isothermal closed space sublimation"",""Structure and growth rate of ZnTe films grown by isothermal closed space sublimation"",""GROWTH AND CHARACTERIZATION OF CdS EPILAYERS ON (100) GaAs BY ATOMIC LAYER EPITAXY"",""Fabrication of low-dimension CdSe structures by atomic layer epitaxy"",""Growth and characterization of ultra-thin quantum wells of II�-VI semiconductors for optoelectronic applications"",""On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium"",""ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CdTe -FILMS GROWN ON CdTe (110) SUBSTRATES"",""Epitaxial growth and electronic structure of CdTe films"",""Atomic layer epitaxy of CdTe on the polar (111)A and (111)B surfaces of CdTe substrates"",""Surface morphology of CdTe films grown on CdTe (111) substrates by atomic layer epitaxy"",""Growth mechanism in atomic layer epitaxy. 2. A model of the growth process of CdTe on CdTe (111) substrates"",""Growth mechanism in atomic layer epitaxy. 1. R E-EVAPORATION OF Cd AND Te FROM CdTe (111) SURFACES MONITORED BY AUGER-ELECTRON SPECTROSCOPY"",""GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .3. REEVAPORATION OF Cd AND Te FROM CdTe (111) SURFACES AND THICK ELEMENTAL DEPOSITS MONITORED BY QUADRUPOLE-MASS SPECTROMETRY"",""Atomic-layer epitaxy of (111) CdTe on BaF _2 substrates"",""ATOMIC-LAYER EPITAXY OF (100) CdTe ON GaAs SUBSTRATES"",""OBSERVATION OF DIFFERENT REFLECTED HIGH-ENERGY ELECTRON-DIFFRACTION PATTERNS DURING ATOMIC LAYER EPITAXY GROWTH OF CdTe EPILAYERS"",""OBSERVATION OF RHEED INTENSITY VARIATIONS DURING ALE -GROWTH OF CdTe -EPILAYERS"",""Ultra high vacuum atomic layer epitaxy of CdTe"",""Reversibility of the elementary mechanisms of atomic-layer epitaxy and sublimation of (001) CdTe"",""Ultrahigh vacuum atomic layer epitaxy of Cd 1-x Mn _x Te layers grown on ZnTe/GaAs (100) substrates: reflection mass spectrometry studies"",""Nanoscale surface clustering on CdTe epilayers"",""Self-regulated growth of tilted superlattices by atomic layer epitaxy"",""Excitons trapped on self-organised CdTe islands in wide ZnTe quantum wells"",""The role of 2 D islands in the epitaxial growth of (001) CdTe"",""Nanoscale cluster formation on CdTe epilayers"",""Formation of II--VI nanostructures on vicinal surfaces"",""Nanostructures formation and optical properties of II--VI semiconductor compounds"",""Optical properties of CdTe/ZnTe ultrathin quantum wells grown by atomic layer epitaxy"",""Kinetic model of II-VI (001) semiconductor surfaces: Growth rates in atomic layer epitaxy"",""Adsorption, desorption, and interdiffusion in atomic layer epitaxy of CdTe and CdZnTe""]","[[""J. M. Hartmann"",""M. Charleux"",""H. Mariette"",""J. L. Rouvi ere""],[""M. A. Herman"",""O. Jylh a"",""M. Pessa""],[""M. Pessa"",""O. Jylh a""],[""W. Faschinger"",""F. Hauzenberger"",""P. Juza"",""A. Pesek"",""H. Sitter""],[""W. Faschinger""],[""J. M. Hartmann"",""G. Feuillet"",""M. Charleux"",""H. Mariette""],[""J. M. Hartmann"",""M. Charleux"",""J. L. Rouvi ere"",""H. Mariette""],[""F. Kany"",""J. M. Hartmann"",""H. Ulmer-Tuffigo"",""H. Mariette""],[""J. M. Hartmann"",""F. Kany"",""M. Charleux"",""Y. Samson"",""J. L. Rouvi ere"",""H. Mariette""],[""J. M. Hartmann"",""F. Kany"",""F. Chautain"",""J. L. Rouvi ere"",""A. Wasiela"",""H. Mariette""],[""E. Guziewicz"",""M. Godlewski"",""K. Kopalko"",""E. usakowska"",""E. Dynowska"",""M. Guziewicz"",""M. M. Godlewski"",""M. Phillips""],[""Y. Takemura"",""M. Konagai"",""H. Nakanishi"",""K. Takahashi""],[""E. M. Larramendi"",""E. Pur on"",""L. C. Hern andez"",""M. S anchez"",""S. De Roux"",""O. de Melo"",""G. Romero-Paredes"",""R. Pe na-Sierra"",""M. Tamura""],[""de Melo, O."",""Larramendi, E. M."",""Duart, J. M. Martinez"",""Velez, M. Hernandez"",""Stangl, J."",""Sitter, H.""],[""T. Tadokoro"",""S. Ohta"",""T. Ishiguro"",""Y. Ichinose"",""S. Kobayashi"",""N. Yamamoto""],[""D. P. Mikhaevich"","". K. Ezhovskii""],[""I. Hern andez-Calder on"",""M. Garc ia-Rocha"",""P. D iaz-Arencibia""],[""Larramendi, Erick M."",""Gutierrez Z-B, Karla"",""de Melo, Osvaldo"",""Woggon, Ulrike"",""Schikora, Detlef"",""Lischka, Klaus""],[""M. Pessa"",""P. Huttunen"",""M. A. Herman""],[""M. Pessa"",""O. Jylh a"",""P. Huttunen"",""M. A. Herman""],[""M. Pessa"",""O. Jylh a"",""M. A. Herman""],[""M. A. Herman"",""M. Vulli"",""M. Pessa""],[""M. A. Herman"",""O. Jylh a"",""M. Pessa""],[""M. A. Herman"",""O. Jylh a"",""M. Pessa""],[""M. A. Herman"",""P. Juza"",""W. Faschinger"",""H. Sitter""],[""W. Faschinger"",""H. Sitter"",""P. Juza""],[""W. Faschinger"",""H. Sitter""],[""W. Faschinger"",""P. Juza"",""H. Sitter""],[""P. Juza"",""W. Faschinger"",""H. Sitter""],[""H. Sitter"",""W. Faschinger""],[""V. B. Veron"",""A. Arnoult"",""B. Daudin"",""S. Tatarenko""],[""J. T. Sadowski"",""M. A. Herman""],[""L. Marsal"",""H. Mariette"",""Y. Samson"",""J. L. Rouviere"",""E. Picard""],[""J. M. Hartmann"",""M. Charleux"",""J. Cibert"",""H. Mariette""],[""T. Taliercio"",""P. Lefebvre"",""N. Magnea"",""J. All egre"",""H. Mathieu""],[""L. Carbonell"",""S. Tatarenko"",""J. Cibert"",""J. M. Hartmann"",""G. Mula"",""V. H. Etgens"",""A. Arnoult""],[""L. Marsal"",""Y. Samson"",""J. L. Rouviere"",""H. Mariette""],[""H. Mariette"",""M. Charleux"",""J. M. Hartmann"",""F. Kany"",""D. Martrou"",""L. Marsal"",""N. Magn ea"",""J. L. Rouvi ere""],[""H. Mariette"",""L. Marsal"",""L. Besombes"",""F. Tinjod"",""B. Gilles"",""K. Kheng"",""J. L. Rouvi ere""],[""M. Garc ia-Rocha"",""I. Hern andez-Calder on""],[""T. Volkmann"",""M. Ahr"",""M. Biehl""],[""E. M. Larramendi"",""O. de Melo"",""M. Hern andez V elez"",""M. C. Tamargo""]]","[1997,1984,1984,1993,1993,1996,1997,1998,1998,1998,2004,1992,2001,2007,1993,2003,2004,2010,1983,1984,1984,1985,1986,1986,1988,1988,1990,1991,1992,1993,1996,1997,1998,1998,1998,1998,1999,1999,2002,2002,2004,2004]","[""Appl. Surf. Sci."",""J. Cryst. Growth"",""Appl. Phys. Lett."",""J. Electron. Mater."",""Phys. Scr."",""J. Appl. Phys."",""Appl. Phys. Lett."",""Superlattices Microstruct."",""J. Appl. Phys."",""J. Cryst. Growth"",""Thin Solid Films"",""J. Cryst. Growth"",""J. Cryst. Growth"",""J. Cryst. Growth"",""J. Cryst. Growth"",""Zh. Prikl. Khim."",""Phys. Status Solidi B"",""J. Cryst. Growth"",""J. Appl. Phys."",""J. Vac. Sci. Technol., A"",""J. Cryst. Growth"",""J. Cryst. Growth"",""Cryst. Res. Technol."",""Cryst. Res. Technol."",""Cryst. Res. Technol."",""Appl. Phys. Lett."",""J. Cryst. Growth"",""J. Cryst. Growth"",""Microchim. Acta"",""Thin Solid Films"",""Phys. Rev. B"",""Thin Solid Films"",""Appl. Phys. Lett."",""Appl. Phys. Lett."",""J. Cryst. Growth"",""Appl. 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Besombes, F. Tinjod, B. Gilles, K. Kheng, and J. L. Rouvie`re, J. Cryst. Growth 237/239, 227 (2002)."",""M. Garc\u0003ıa-Rocha and I. Hern\u0003andez-Calder\u0003on, Surf. Rev. Lett. 9, 1667 (2002)."",""T. Volkmann, M. Ahr, and M. Biehl, Phys. Rev. B 69, 165303 (2004)."",""E. M. Larramendi, O. de Melo, M. Hern\u0003andez V\u0003elez, and M. C. Tamargo, J. Appl. Phys. 96, 7164 (2004).""]" +,,CdMe2,Et2Te,1367,[1367],"[""""]","[""Atomic layer deposition of multilayer ZnTe/CdTe nanostructures""]","[[""Ezhovskii, Y. K."",""Pavlov, D. V.""]]",[2007],"[""Inorg. Mater.""]","[""Y. K. Ezhovskii and D. V. Pavlov, Inorg. Mater. 43, 692 (2007).""]" +,,CdMe2,MeAyTe,1367 and 1748–1750,"[1367,1748,1749,1750]","["""","""","""",""""]","[""Atomic layer deposition of multilayer ZnTe/CdTe nanostructures"",""Dimensional structural transition in CdTe/Cd _x Zn _ 1�x Te nanostructures"",""LOW-TEMPERATURE EPITAXY OF HgTe , CdTe , AND HgCdTe USING FLOW MODULATION TECHNIQUES"",""ATOMIC LAYER EPITAXY OF CdTe ON GaAs , BY ORGANOMETALLIC VAPOR-PHASE EPITAXY""]","[[""Ezhovskii, Y. K."",""Pavlov, D. V.""],[""H. S. Lee"",""H. L. Park"",""T. W. Kim""],[""I. Bhat"",""H. Ehsani"",""W. S. Wang"",""S. K. Ghandhi"",""N. H. Karam""],[""W.-S. Wang"",""H. E. Ehsani"",""I. B. Bhat""]]","[2007,2004,1992,1992]","[""Inorg. Mater."",""Appl. Phys. Lett."",""J. Vac. Sci. Technol., B"",""J. Cryst. Growth""]","[""Y. K. Ezhovskii and D. V. Pavlov, Inorg. Mater. 43, 692 (2007)."",""H. S. Lee, H. L. Park, and T. W. Kim, Appl. Phys. Lett. 85, 5598 (2004)."",""I. Bhat, H. Ehsani, W. S. Wang, S. K. Ghandhi, and N. H. Karam, J. Vac. Sci. Technol. 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Growth 163, 180 (1996).""]" +,,InMe3,AsH3,"1394, 1428, 1786, and 1787","[1394,1428,1786,1787]","["""","""","""",""""]","[""(GaAs) _m (GaP) _n low dimensional short-period superlattice fabricated by atomic layer epitaxy"",""In situ X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GaAs GROWN BY ATOMIC LAYER EPITAXY"",""Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum"",""Steric hindrance effects in atomic layer epitaxy of InAs""]","[[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano""],[""K. Kodama"",""M. Ozeki"",""K. Mochizuki"",""N. Ohtsuka""],[""N. Otsuka"",""J. Nishizawa"",""H. Kikuchi"",""Y. Oyama""],[""W. G. Jeong"",""E. P. Menu"",""P. D. Dapkus""]]","[1998,1989,1999,1989]","[""Microelectron. Eng."",""Appl. Phys. Lett."",""J. Vac. Sci. Technol., A"",""Appl. Phys. Lett.""]","[""H. Isshiki, Y. Aoyagi, and T. Sugano, Microelectron. Eng. 43/44, 301 (1998)."",""K. Kodama, M. Ozeki, K. Mochizuki, and N. Ohtsuka, Appl. Phys. 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Growth 195, 234 (1998).""]" +,,InEt3,AsH3,"1421, 1791, and 1792","[1421,1791,1792]","["""","""",""""]","[""Self-limiting mechanism in the atomic layer epitaxy of GaAs"",""Growth of InAs and InAs _1 (GaAs) _5 superlattice by atomic layer epitaxy using dimethylindium chloride"",""Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxy""]","[[""M. A. Tischler"",""S. M. Bedair""],[""K. Mori"",""S. Sugou"",""Y. Kato"",""A. Usui""],[""M. A. Tischler"",""S. M. Bedair""]]","[1986,1992,1986]","[""Appl. Phys. Lett."",""Appl. Phys. Lett."",""Appl. Phys. Lett.""]","[""M. A. Tischler and S. M. Bedair, Appl. Phys. Lett. 48, 1681 (1986)."",""K. Mori, S. Sugou, Y. Kato, and A. Usui, Appl. Phys. Lett. 60, 1717 (1992)."",""M. A. Tischler and S. M. Bedair, Appl. Phys. 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Paszkowicz""]]",[2008],"[""J. Cryst. Growth""]","[""A. W\u0003ojcik, M. Godlewski, E. Guziewicz, R. Minikayev, and W. Paszkowicz, J. Cryst. Growth 310, 284 (2008).""]" +,,SnCl4,H2O,"128, 714, 747, 1369, and 1795–1812","[128,714,747,1369,1795,1796,1797,1798,1799,1800,1801,1802,1803,1804,1805,1806,1807,1808,1809,1810,1811,1812]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1134/S1087659608050039"",""10.1007/s00339-009-5154-x"",""10.1007/s10853-010-4440-5"",""DOI: 10.1016/j.snb.2010.05.018"",""10.1021/jp105852h"",""DOI: 10.1016/j.ssc.2010.07.002""]","[""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Effect of the history of a disperse system on thermal compaction of materials containing - AlO _ 1.5 and TiO _2"",""Atomic layer deposition of titanium dioxide from TiCl _4 and H _2 O : investigation of growth mechanism"",""Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy"",""CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN InSb LAYERS AND DIODE STRUCTURES"",""Reaction of tin tetrachloride with silica gel"",""CONTROLLED GROWTH OF TIN DIOXIDE THIN-FILMS BY ATOMIC LAYER EPITAXY"",""CONTROLLED GROWTH OF ANTIMONY-DOPED TIN DIOXIDE THIN-FILMS BY ATOMIC LAYER EPITAXY"",""Deposition of tin oxide into porous silicon by atomic layer epitaxy"",""Controlled Electrical Conductivity in SnO _2 Thin Films by Oxygen or Hydrocarbon Assisted Atomic Layer Epitaxy"",""Transducer properties of AFM microprobes conformally covered by ALE -deposited SnO _2 thin films"",""Atomic force microscopy studies of SnO _2 thin film microstructures deposited by atomic layer epitaxy"",""Atomic-layer chemical vapor deposition of SnO _2 for gas-sensing applications"",""Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD"",""Microstructure characterisation of ALD -grown epitaxial SnO _2 thin film"",""Epitaxial growth of sub-nanometre thick tin dioxide films on sapphire substrates by pulsed atomic layer chemical vapour deposition"",""Preparation of Tin Oxide Nanocoatings on Borosilicate Glass by the Molecular Layering Method"",""Influence of oxygen depletion layer on the properties of tin oxide gas-sensing films fabricated by atomic layer deposition"",""Structure and photoluminescence properties of ZnS nanowires sheathed with SnO2 by atomic layer deposition"",""Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensors"",""Non-Aqueous Approach to Synthesize Amorphous/Crystalline Metal Oxide-Graphene Nanosheet Hybrid Composites"",""Influence of coating and thermal annealing on the structure and luminescence properties of CuO nanorods""]","[[""R. Matero"",""A. Rahtu"",""M. Ritala"",""M. Leskela"",""T. Sajavaara""],[""N. V. Dolgushev"",""A. A. Malkov"",""A. A. Malygin"",""S. A. Suvorov"",""A. V. Shchukarev"",""A. V. Beljaev"",""V. A. Bykov""],[""J. Aarik"",""A. Aidla"",""H. Mandar"",""T. Uustare""],[""M. Nieminen"",""L. Niinisto"",""E. Rauhala""],[""G. S. Lee"",""P. E. Thompson"",""J. L. Davis"",""J. P. Omaggio"",""W. A. Schmidt""],[""R. R. Rachkovskii"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""H. Viirola"",""L. Niinist o""],[""H. Viirola"",""L. Niinist o""],[""C. D ucs o"",""N. Q. Khanh"",""Z. Horv ath"",""I. B arsony"",""M. Utriainen"",""S. Lehto"",""M. Nieminen"",""L. Niinist o""],[""M. Utriainen"",""K. Kov acs"",""J. M. Campbell"",""L. Niinist o"",""F. R eti""],[""M. Utriainen"",""L. Niinist o"",""R. Matero""],[""M. Utriainen"",""H. Lattu"",""H. Viirola"",""L. Niinist o"",""R. Resch"",""G. Friedbacher""],[""A. Rosental"",""A. Tarre"",""A. Gerst"",""T. Uustare"",""V. Sammelselg""],[""T. Takeuchi"",""K. Shoji"",""T. Tadano"",""I. Doteshita"",""S. Onodera""],[""J. Lu"",""J. Sundqvist"",""M. Ottosson"",""A. Tarre"",""A. Rosental"",""J. Aarik"",""A. H rsta""],[""T. Takeuchi"",""I. Doteshita"",""S. Asami""],[""Antipov, V. V."",""Dorofeev, V. P."",""Malkov, A. A."",""Malygin, A. A."",""Mikhailovsky, S. V."",""Sosnov, E. A.""],[""Natarajan, Gomathi"",""Cameron, David C.""],[""Baek, Kyungjoon"",""Jin, Changhyun"",""Lee, Jungkeun"",""Jeong, Bong-Yong"",""Lee, Wan In"",""Lee, Chongmu""],[""Antti J. Niskanen"",""Aapo Varpula"",""Mikko Utriainen"",""Gomathi Natarajan"",""David C. Cameron"",""Sergey Novikov"",""Veli-Matti Airaksinen"",""Juha Sinkkonen"",""Sami Franssila""],[""Meng, Xiangbo"",""Geng, Dongsheng"",""Liu, Jian"",""Banis, Mohammad Norouzi"",""Zhang, Yong"",""Li, Ruying"",""Sun, Xueliang""],[""Changhyun Jin"",""Kyungjoon Baek"",""Sunghoon Park"",""Hyoun Woo Kim"",""Wan In Lee"",""Chongmu Lee""]]","[2000,1992,2001,1996,1993,1970,1994,1994,1996,1999,1999,2000,2001,2003,2004,2004,2008,2009,2010,2010,2010,2010]","[""Thin Solid Films"",""Zh. Prikl. Khim."",""Appl. Surf. Sci."",""J. Mater. Chem."",""Solid-State Electron."",""Zh. Neorg. Khim."",""Thin Solid Films"",""Thin Solid Films"",""J. Electrochem. Soc."",""J. Electrochem. Soc."",""Appl. Phys. A"",""Mikrochim. Acta"",""Sens. Actuators, B"",""Thin Solid Films"",""J. Cryst. Growth"",""Surf. Interface Anal."",""Glass Phys. Chem."",""Appl. Phys. A"",""J. Mater. Sci."",""Sens. Actuators, B"",""J. Phys. Chem. C"",""Solid State Commun.""]","[""R. Matero, A. Rahtu, M. Ritala, M. Leskel€a, and T. 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Varpula, M. Utriainen, G. Natarajan, D. C. Cameron, S. Novikov, V.-M. Airaksinen, J. Sinkkonen, and S. Franssila, Sens. Actuators B 148, 227 (2010)."",""X. Meng, D. Geng, J. Liu, M. N. Banis, Y. Zhang, R. Li, and X. Sun, J. Phys. Chem. C 114, 18330 (2010)."",""C. Jin, K. Baek, S. Park, H. W. Kim, W. I. Lee, and C. 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Onodera""],[""Jin, Changhyun"",""Kim, Hyunsoo"",""Baek, Kyungjoon"",""Kim, Hyoun Woo"",""Lee, Chongmu""],[""A. Tarre"",""A. Rosental"",""A. Aidla"",""J. Aarik"",""J. Sundqvist"",""A. H rsta""],[""A. Rosental"",""A. Tarre"",""A. Gerst J. Sundqvist"",""A. H rsta"",""A. Aidla"",""J. Aarik"",""V. Sammelselg"",""T. Uustare""],[""Ferguson, J. D."",""Buechler, K. J."",""Weimer, A. W."",""George, S. M.""],[""Du, X."",""Du, Y."",""George, S. M.""],[""Du, X."",""George, S. M.""]]","[2003,2010,2002,2003,2005,2005,2008]","[""Thin Solid Films"",""Cryst. Res. Technol."",""Vacuum"",""Sens. Actuators, B"",""Powder Technol."",""J. Vac. Sci. Technol., A"",""Sens. Actuators, B""]","[""T. Takeuchi, K. Shoji, T. Tadano, I. Doteshita, and S. Onodera, Thin Solid Films 442, 98 (2003)."",""C. Jin, H. Kim, K. Baek, H. W. Kim, and C. Lee, Cryst. Res. Technol. 45, 199 (2010)."",""A. Tarre, A. Rosental, A. Aidla, J. Aarik, J. Sundqvist, and A. Ha˚rsta, Vacuum 67, 571 (2002)."",""A. Rosental, A. Tarre, A. G. J. Sundqvist, A. Ha˚rsta, A. Aidla, J. Aarik, V. Sammelselg, and T. Uustare, Sens. Actuators B 93, 552 (2003)."",""J. D. Ferguson, K. J. Buechler, A. W. Weimer, and S. M. George, Powder Technol. 156, 154 (2005)."",""X. Du, Y. Du, and S. M. George, J. Vac. Sci. Technol. A 23, 581 (2005)."",""X. Du and S. M. George, Sens. Actuators B 135, 152 (2008).""]" +,,SnI4,H2O2,1804,[1804],"[""""]","[""Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD""]","[[""T. Takeuchi"",""K. Shoji"",""T. Tadano"",""I. Doteshita"",""S. Onodera""]]",[2003],"[""Thin Solid Films""]","[""T. Takeuchi, K. Shoji, T. Tadano, I. Doteshita, and S. Onodera, Thin Solid Films 442, 98 (2003).""]" +,,SnI4,O2,"1804, 1813, 1814, and 1819–1821","[1804,1813,1814,1819,1820,1821]","["""",""10.1002/crat.200900648"","""","""","""",""""]","[""Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD"",""Preparation, structure, and photoluminescence properties of Ga2O3/SnO2 coaxial nanowires"",""New routes to SnO _2 heteroepitaxy"",""CO Gas Sensing by Ultrathin Tin Oxide Films Grown by Atomic Layer Deposition Using Transmission FTIR Spectroscopy†"",""Nanoepitaxy of SnO _2 on - Al _2 O _3 (012)"",""Atomic Layer Deposition of Epitaxial and Polycrystalline SnO _2 Films from the SnI _4 /O _2 Precursor Combination""]","[[""T. Takeuchi"",""K. Shoji"",""T. Tadano"",""I. Doteshita"",""S. Onodera""],[""Jin, Changhyun"",""Kim, Hyunsoo"",""Baek, Kyungjoon"",""Kim, Hyoun Woo"",""Lee, Chongmu""],[""A. Tarre"",""A. Rosental"",""A. Aidla"",""J. Aarik"",""J. Sundqvist"",""A. H rsta""],[""Du, X."",""Du, Y."",""George, S. M.""],[""A. Tarre"",""A. Rosental"",""J. Sundqvist"",""A. H rsta"",""T. Uustare"",""V. Sammelselg""],[""J. Sundqvist"",""A. Tarre"",""A. Rosental"",""A. H rsta""]]","[2003,2010,2002,2008,2003,2003]","[""Thin Solid Films"",""Cryst. Res. Technol."",""Vacuum"",""J. Phys. Chem. A"",""Surf. Sci."",""Chem. Vap. Deposition""]","[""T. Takeuchi, K. Shoji, T. Tadano, I. Doteshita, and S. Onodera, Thin Solid Films 442, 98 (2003)."",""C. Jin, H. Kim, K. Baek, H. W. Kim, and C. Lee, Cryst. Res. Technol. 45, 199 (2010)."",""A. Tarre, A. Rosental, A. Aidla, J. Aarik, J. Sundqvist, and A. Ha˚rsta, Vacuum 67, 571 (2002)."",""X. Du, Y. Du, and S. M. George, J. Phys. Chem. A 112, 9211 (2008)."",""A. Tarre, A. Rosental, J. Sundqvist, A. Ha˚rsta, T. Uustare, and V. Sammelselg, Surf. Sci. 532, 514 (2003)."",""J. Sundqvist, A. Tarre, A. Rosental, and A. Ha˚rsta, Chem. Vap. Deposition 9, 21 (2003).""]" +,,SnMe4,N2O4,459 and 883,"[459,883]","[""10.1109/TED.2009.2037178"",""10.1149/1.3457485""]","[""Fast PEALD ZnO Thin-Film Transistor Circuits"",""Low Temperature Epitaxial Growth of High Permittivity Rutile TiO2 on SnO2""]","[[""Mourey, Devin A."",""Zhao, Dalong A."",""Sun, Jie"",""Jackson, Thomas N.""],[""Wang, Hongtao"",""Xu, Sheng"",""Gordon, Roy G.""]]","[2010,2010]","[""IEEE Trans. Electron Devices"",""Electrochem. Solid-State Lett.""]","[""D. A. Mourey, D. A. Zhao, J. Sun, and T. N. Jackson, IEEE Trans. Electron Devices 57, 530 (2010)."",""H. Wang, S. Xu, and R. G. Gordon, Electrochem. Solid-State Lett. 13, G75 (2010).""]" +,,SnEt4,N2O4,459,[459],"[""10.1109/TED.2009.2037178""]","[""Fast PEALD ZnO Thin-Film Transistor Circuits""]","[[""Mourey, Devin A."",""Zhao, Dalong A."",""Sun, Jie"",""Jackson, Thomas N.""]]",[2010],"[""IEEE Trans. Electron Devices""]","[""D. A. Mourey, D. A. Zhao, J. Sun, and T. N. Jackson, IEEE Trans. Electron Devices 57, 530 (2010).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_017_table_012/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_017_table_012/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..ce9abdeaf1848232f5744c08363e2bbd142df44e --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_017_table_012/gold.csv @@ -0,0 +1,53 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,SnnBu2(CH3COO)2,O2⚡,1822–1825,"[1822,1823,1824,1825]","["""","""","""",""10.1088/0957-4484/21/24/245605""]","[""Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study"",""Characteristics of plasma-enhanced atomic-layer deposited (PEALD) SnO2 thin films"",""Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing"",""SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance""]","[[""Sundqvist, J."",""Lu, J."",""Ottosson, M."",""H rsta, A.""],[""Lee, W."",""Choi, Y."",""Hong, K."",""Kim, N. 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Gordon""],[""Wang, Tuo"",""Ekerdt, John G.""]]","[2003,2010]","[""Nat. Mater."",""Chem. Mater.""]","[""B. S. Lim, A. Rahtu, and R. G. Gordon, Nature Mater. 2, 749 (2003)."",""T. Wang and J. G. Ekerdt, Chem. Mater. 22, 3798 (2010).""]" +,,La(iPrfAMD)3,H2O,1844,[1844],"[""10.1021/jp806027m""]","[""In Situ Infrared Characterization during Atomic Layer Deposition of Lanthanum Oxide""]","[[""Kwon, Jinhee"",""Dai, Min"",""Halls, Mathew D."",""Langereis, Erik"",""Chabal, Yves J."",""Gordon, Roy G.""]]",[2009],"[""J. Phys. Chem. C""]","[""J. Kwon, M. Dai, M. D. Halls, E. Langereis, Y. J. Chabal, and R. G. Gordon, J. Phys. Chem. C 113, 654 (2009).""]" +,,La(iPrfAMD)3,O2,1607,[1607],"[""10.1149/1.3070617""]","[""Atomic Layer Deposition of ZrO2 and HfO2 Nanotubes by Template Replication""]","[[""Gu, Diefeng"",""Baumgart, Helmut"",""Namkoong, Gon"",""Abdel-Fattah, Tarek M.""]]",[2009],"[""Electrochem. Solid-State Lett.""]","[""D. Gu, H. Baumgart, G. Namkoong, and T. M. Abdel-Fattah, Electrochem. Solid-State Lett. 12, K25 (2009).""]" +,,La(iPrfAMD)3,O3,1844,[1844],"[""10.1021/jp806027m""]","[""In Situ Infrared Characterization during Atomic Layer Deposition of Lanthanum Oxide""]","[[""Kwon, Jinhee"",""Dai, Min"",""Halls, Mathew D."",""Langereis, Erik"",""Chabal, Yves J."",""Gordon, Roy G.""]]",[2009],"[""J. Phys. Chem. C""]","[""J. Kwon, M. Dai, M. D. Halls, E. Langereis, Y. J. Chabal, and R. G. Gordon, J. Phys. Chem. C 113, 654 (2009).""]" +,,La(Cp)3,H2O,"1835, 1845, and 1846","[1835,1845,1846]","["""",""10.1016/j.mee.2009.03.056"",""""]","[""High-Temperature Oxidation of Ni Coated with La _2 O _3 by Atomic-Layer Chemical-Vapor Deposition ( ALCVD )"",""Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone"",""Vibrational and electrical properties of hexagonal La2O3 films""]","[[""R. Haugsrud"",""A. E. Gunnaes"",""O. Nilsen""],[""Lee, B."",""Park, T. J."",""Hande, A."",""Kim, M. J."",""Wallace, R. M."",""Kim, J."",""Liu, X."",""Yi, J. H."",""Li, H."",""Rousseau, M."",""Shenai, D."",""Suydam, J.""],[""Scarel, G."",""Debernardi, A."",""Tsoutsou, D."",""Spiga, S."",""Capelli, S. C."",""Lamagna, L."",""Volkos, S. N."",""Alia, M."",""Fanciulli, M.""]]","[2003,2009,2007]","[""Oxid. Met."",""Microelectron. Eng."",""Appl. Phys. Lett.""]","[""R. Haugsrud, A. E. Gunnaes, and O. Nilsen, Oxid. Met. 59, 215 (2003)."",""B. Lee, T. J. Park, A. Hande, M. J. Kim, R. M. Wallace, J. Kim, X. Liu, J. H. Yi, H. Li, M. Rousseau, D. Shenai, and J. Suydam, Microelectron. Eng. 86, 1658 (2009)."",""G. Scarel, A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L. Lamagna, S. N. Volkos, M. Alia, and M. Fanciulli, Appl. Phys. Lett. 91, 102901 (2007).""]" +,,La(CpEt)3,O2⚡,1847,[1847],"[""10.1016/j.mee.2008.09.033""]","[""Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing""]","[[""Tsoutsou, D."",""Scarel, G."",""Debernardi, A."",""Capelli, S. C."",""Volkos, S. N."",""Lamagna, L."",""Schamm, S."",""Coulon, P. E."",""Fanciulli, M.""]]",[2008],"[""Microelectron. Eng.""]","[""D. Tsoutsou, G. Scarel, A. Debernardi, S. C. Capelli, S. N. Volkos, L. Lamagna, S. Schamm, P. E. Coulon, and M. Fanciulli, Microelectron. Eng. 85, 2411 (2008).""]" +,,La(CpEt)3,O3⚡,1848,[1848],"[""""]","[""Atomic layer deposition of La2O3 thin films by using an electron cyclotron resonance plasma source""]","[[""Kim, B. Y."",""Ko, M. G."",""Lee, E. J."",""Hong, M. S."",""Jeon, Y. J."",""Park, J. W.""]]",[2006],"[""J. Korean Phys. Soc.""]","[""B. Y. Kim, M. G. Ko, E. J. Lee, M. S. Hong, Y. J. Jeon, and J. W. Park, J. Korean Phys. Soc. 49, 1303 (2006).""]" +,,La(CpiPr)3,H2O,1849 and 1850,"[1849,1850]","["""",""10.1149/1.2960995""]","[""Lanthanum-oxide thin films deposited by plasma-enhanced atomic layer deposition"",""Process and material properties of HfLaOx prepared by atomic layer deposition""]","[[""Lee, E. J."",""Ko, M. G."",""Kim, B. Y."",""Park, S. K."",""Kim, H. D."",""Park, J. W.""],[""He, Wei"",""Chan, Daniel S. H."",""Kim, Sun-Jung"",""Kim, Young-Sun"",""Kim, Sung-Tae"",""Cho, Byung Jin""]]","[2006,2008]","[""J. Korean Phys. Soc."",""J. Electrochem. Soc.""]","[""E. J. Lee, M. G. Ko, B. Y. Kim, S. K. Park, H. D. Kim, and J. W. Park, J. Korean Phys. Soc. 49, 1243 (2006)."",""W. He, D. S. H. Chan, S.-J. Kim, Y.-S. Kim, S.-T. Kim, and B. J. Cho, J. Electrochem. Soc. 155, G189 (2008).""]" +,,La(CpiPr)3,O3,1851 and 1852,"[1851,1852]","[""DOI: 10.1016/j.tsf.2010.07.108"",""""]","[""Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition"",""Improving threshold voltage and device performance of gate-first HfSiON/Metal gate n-MOSFETs by an ALD La2O3 capping layer""]","[[""Woo-Hee Kim"",""W.J. Maeng"",""Kyeong-Ju Moon"",""Jae-Min Myoung"",""Hyungjun Kim""],[""Kamiyama, S."",""Kurosawa, E."",""Nara, Y.""]]","[2010,2008]","[""Thin Solid Films"",""J. Electrochem. Soc.""]","[""W.-H. Kim, W. Maeng, K.-J. Moon, J.-M. Myoung, and H. Kim, Thin Solid Films 519, 362 (2010)."",""S. Kamiyama, E. Kurosawa, and Y. Nara, J. Electrochem. Soc. 155, H373 (2008).""]" +,,La(CpiPr)3,O2⚡,1850 and 1853–1856,"[1850,1853,1854,1855,1856]","[""10.1149/1.2960995"",""10.1063/1.3499258"","""","""",""10.1557/JMR.2010.0245""]","[""Process and material properties of HfLaOx prepared by atomic layer deposition"",""O[sub 3]-based atomic layer deposition of hexagonal La[sub 2]O[sub 3] films on Si(100) and Ge(100) substrates"",""Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films"",""Characteristics of La2O3 Thin Films Deposited Using the ECR Atomic Layer Deposition Method"",""Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition""]","[[""He, Wei"",""Chan, Daniel S. H."",""Kim, Sun-Jung"",""Kim, Young-Sun"",""Kim, Sung-Tae"",""Cho, Byung Jin""],[""L. Lamagna"",""C. Wiemer"",""M. Perego"",""S. N. Volkos"",""S. Baldovino"",""D. Tsoutsou"",""S. Schamm-Chardon"",""P. E. Coulon"",""M. Fanciulli""],[""Kim, Woong-Sun"",""Park, Sang-Kyun"",""Moon, Dae-Yong"",""Kim, Tae-Sub"",""Kang, Byoung-Woo"",""Seo, Jin-Kyo"",""Kim, Heon-Do"",""Park, Jong-Wan""],[""Kim, Woong-Sun"",""Park, Sang-Kyun"",""Moon, Dae-Yong"",""Kang, Byoung-Woo"",""Kim, Heon-Do"",""Park, Jong-Wan""],[""Kim,Yongchan"",""Woo,Sanghyun"",""Kim,Hyungchul"",""Lee,Jaesang"",""Kim,Honggyu"",""Lee,Hyerin"",""Jeon,Hyeongtag""]]","[2008,2010,2008,2009,2010]","[""J. Electrochem. Soc."",""J. Appl. Phys."",""J. Korean Phys. Soc."",""J. Korean Phys. Soc."",""J. Mater. Res.""]","[""W. He, D. S. H. Chan, S.-J. Kim, Y.-S. Kim, S.-T. Kim, and B. J. Cho, J. Electrochem. Soc. 155, G189 (2008)."",""L. Lamagna, C. Wiemer, M. Perego, S. N. Volkos, S. Baldovino, D. Tsoutsou, S. Schamm-Chardon, P. E. Coulon, and M. Fanciulli, J. Appl. Phys. 108, 084108 (2010)."",""W.-S. Kim, S.-K. Park, D.-Y. Moon, T.-S. Kim, B.-W. Kang, J.-K. Seo, H.-D. Kim, and J.-W. Park, J. Korean Phys. Soc. 53, 3334 (2008)."",""W.-S. Kim, S.-K. Park, D.-Y. Moon, B.-W. Kang, H.-D. Kim, and J.-W. Park, J. Korean Phys. Soc. 55, 590 (2009)."",""Y. Kim, S. Woo, H. Kim, J. Lee, H. Kim, H. Lee, and H. Jeon, J. Mater. Res. 25, 1898 (2010).""]" +,La2S3,La(thd)3,H2S,1857,[1857],"[""10.1149/1.3301665""]","[""The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD""]","[[""Kim, Hyungchul"",""Woo, Sanghyun"",""Lee, Jaesang"",""Kim, Honggyu"",""Kim, Yongchan"",""Lee, Hyerin"",""Jeon, Hyeongtag""]]",[2010],"[""J. Electrochem. Soc.""]","[""H. Kim, S. Woo, J. Lee, H. Kim, Y. Kim, H. Lee, and H. Jeon, J. Electrochem. Soc. 157, H479 (2010).""]" +,LaF3,La(thd)3,TiF4,67 and 1858,"[67,1858]","["""",""""]","[""Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films"",""Deposition of lanthanum sulfide thin films by atomic layer epitaxy""]","[[""Tero Pilvi"",""Mikko Ritala"",""Markku Leskela"",""Martin Bischoff"",""Ute Kaiser"",""Norbert Kaiser""],[""K. Kukli"",""H. Heikkinen"",""E. Nyk anen"",""L. Niinist o""]]","[2008,1998]","[""Appl. Opt."",""J. Alloys Compd.""]","[""T. Pilvi, M. Ritala, M. Leskel€a, M. Bischoff, U. Kaiser, and N. Kaiser, Appl. Opt. 47, C271 (2008)."",""K. Kukli, H. Heikkinen, E. Nyk€anen, and L. Niinist€o, J. Alloys Compd. 275–277, 10 (1998).""]" +,LaxSiyOx,La[N(SiMe3)2]3,(tBuO)3Si,654,[654],"[""""]","[""Properties of Oxide Film Atomic Layer Deposited from Tetraethoxy Silane, Hafnium Halides, and Water""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""R. I. Hegde"",""D. C. Gilmer"",""P. J. Tobin""]]",[2004],"[""J. Electrochem. Soc.""]","[""K. Kukli, M. Ritala, M. Leskel€a, T. Sajavaara, J. Keinonen, R. I. Hegde, D. C. Gilmer, and P. J. Tobin, J. Electrochem. Soc. 151, F98 (2004).""]" +,LaAlO3,[LaAl(OiPr)6\-(iPrOH)]2,H2O,539,[539],"[""""]","[""Synthesis of oxide superalloys by ML--ALE method""]","[[""V. E. Drozd"",""A. A. Tulub"",""V. B. Aleskovskii"",""D. V. Korol'kov""]]",[1994],"[""Appl. Surf. Sci.""]","[""V. E. Drozd, A. A. Tulub, V. B. Aleskovskii, and D. V. Korol’kov, Appl. Surf. Sci. 82/83, 587 (1994).""]" +,LaxZryOz,La(CpiPr)3,Zr(CpMe)2\-Me(OMe),1625,[1625],"[""""]","[""Barrier characteristics of ZrN films deposited by remote plasma-enhanced atomic layer deposition using tetrakis(diethylamino)zirconium precursor""]","[[""Cho, S."",""Lee, K."",""Song, P."",""Jeon, H."",""Kim, Y.""]]",[2007],"[""Jpn. J. Appl. Phys.""]","[""S. Cho, K. Lee, P. Song, H. Jeon, and Y. Kim, Jpn. J. Appl. Phys., Part 1 46, 4085 (2007).""]" +58,Cerium,,,,[],[],[],[],[],[],[] +,CeO2,Ce(thd)4,O2,1135 and 1137,"[1135,1137]","["""",""""]","[""Advanced materials processing by adsorption control"",""Adsorption controlled preparation of heterogeneous catalysts""]","[[""S. Haukka"",""T. Suntola""],[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""]]","[1997,1999]","[""Interface Sci."",""Adsorption and its Applications in Industry and Environmental Protection""]","[""S. Haukka and T. Suntola, Interface Sci. 75, 119 (1997)."",""S. Haukka, E.-L. Lakomaa, and T. Suntola, in Adsorption and its Applications in Industry and Environmental Protection, Studies in Surface Science and Catalysis, edited by A. Dabrowski (Elsevier, Amsterdam, 1999), Vol. 120A, pp. 715–750.""]" +,,Ce(thd)4,O3,1859 and 1860,"[1859,1860]","["""",""""]","[""Atomic Layer Deposition of LaF _3 Thin Films using La(thd) _3 and TiF _4 as Precursors"",""Cerium dioxide buffer layers at low temperature by atomic layer deposition""]","[[""Tero Pilvi"",""Esa Puukilainen"",""Kai Arstila"",""Markku Leskel a"",""Mikko Ritala""],[""J. P aiv asaari"",""M. Putkonen"",""L. Niinist o""]]","[2008,2002]","[""Chem. Vap. Deposition"",""J. Mater. Chem.""]","[""T. Pilvi, E. Puukilainen, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Vap. Deposition 14, 85 (2008)."",""J. P€aiv€asaari, M. Putkonen, and L. Niinist€o, J. Mater. Chem. 12, 1828 (2002).""]" +,,Ce(thd)3phen,O3,1859,[1859],"[""""]","[""Atomic Layer Deposition of LaF _3 Thin Films using La(thd) _3 and TiF _4 as Precursors""]","[[""Tero Pilvi"",""Esa Puukilainen"",""Kai Arstila"",""Markku Leskel a"",""Mikko Ritala""]]",[2008],"[""Chem. Vap. Deposition""]","[""T. Pilvi, E. Puukilainen, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Vap. Deposition 14, 85 (2008).""]" +59,Praseodymium,,,,[],[],[],[],[],[],[] +,PrOx,Pr[N(SiMe3)2]3,H2O,1861 and 1862,"[1861,1862]","[""10.1063/1.3023059"",""""]","[""Permittivity enhancement of hafnium dioxide high-kappa films by cerium doping"",""Evaluation of a praseodymium precursor for atomic layer deposition of oxide dielectric films""]","[[""Chalker, P. R."",""Werner, M."",""Romani, S."",""Potter, R. J."",""Black, K."",""Aspinall, H. C."",""Jones, A. C."",""Zhao, C. Z."",""Taylor, S."",""Heys, P. N.""],[""K. Kukli"",""M. Ritala"",""T. Pilvi"",""T. Sajavaara"",""M. Leskel a"",""A. C. Jones"",""H. C. Aspinall"",""D. C. Gilmer"",""P. J. Tobin""]]","[2008,2004]","[""Appl. Phys. Lett."",""Chem. Mater.""]","[""P. R. Chalker, M. Werner, S. Romani, R. J. Potter, K. Black, H. C. Aspinall, A. C. Jones, C. Z. Zhao, S. Taylor, and P. N. Heys, Appl. Phys. Lett. 93, 182911 (2008)."",""K. Kukli, M. Ritala, T. Pilvi, T. Sajavaara, M. Leskel€a, A. C. Jones, H. C. Aspinall, D. C. Gilmer, and P. J. Tobin, Chem. Mater. 16, 5162 (2004).""]" +,,Pr(iPrAMD)3,H2O,1863,[1863],"[""""]","[""Recent developments in the MOCVD and ALD of rare earth oxides and silicates""]","[[""Jones, A. C."",""Aspinall, H. C."",""Chalker, R. R."",""Potter, R. J."",""Kukli, K."",""Rahtu, A."",""Ritala, M."",""Leskel a, M.""]]",[2005],"[""Mater. Sci. Eng., B""]","[""A. C. Jones, H. C. Aspinall, R. R. Chalker, R. J. Potter, K. Kukli, A. Rahtu, M. Ritala, and M. Leskel€a, Mater. Sci. Eng., B 118, 97 (2005).""]" +,,Pr(CpiPr)3,H2O,1863,[1863],"[""""]","[""Recent developments in the MOCVD and ALD of rare earth oxides and silicates""]","[[""Jones, A. C."",""Aspinall, H. C."",""Chalker, R. R."",""Potter, R. J."",""Kukli, K."",""Rahtu, A."",""Ritala, M."",""Leskel a, M.""]]",[2005],"[""Mater. Sci. Eng., B""]","[""A. C. Jones, H. C. Aspinall, R. R. Chalker, R. J. Potter, K. Kukli, A. Rahtu, M. Ritala, and M. Leskel€a, Mater. Sci. Eng., B 118, 97 (2005).""]" +,PrAlxOy,[PrAl(OiPr)6\-(PriOH)]2,H2O,540,[540],"[""""]","[""Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor""]","[[""Gaskell, J. M."",""Jones, A. C."",""Aspinall, H. C."",""Przybylak, S."",""Chalker, P. R."",""Black, K."",""Davies, H. O."",""Taechakumput, P."",""Taylor, S."",""Critchlow, G. W.""]]",[2006],"[""J. Mater. Chem.""]","[""J. M. Gaskell, A. C. Jones, H. C. Aspinall, S. Przybylak, P. R. Chalker, K. Black, H. O. Davies, P. Taechakumput, S. Taylor, and G. W. Critchlow, J. Mater. Chem. 16, 3854 (2006).""]" +60,Neodymium,,,,[],[],[],[],[],[],[] +,Nd2O3,Nd(thd)3,O3,1864 and 1865,"[1864,1865]","["""",""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications"",""A comparative study on lanthanide oxide thin films grown by atomic layer deposition""]","[[""de Rouffignac, P."",""Gordon, R. G.""],[""J. P aiv asaari"",""M. Putkonen"",""L. Niinist o""]]","[2006,2005]","[""Chem. Vap. Deposition"",""Thin Solid Films""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006)."",""J. P€aiv€asaari, M. Putkonen, and L. Niinist€o, Thin Solid Films 472, 275 (2005).""]" +,NdAlxOy,[NdAl(OiPr)6\-(PriOH)]2,H2O,540,[540],"[""""]","[""Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor""]","[[""Gaskell, J. M."",""Jones, A. C."",""Aspinall, H. C."",""Przybylak, S."",""Chalker, P. R."",""Black, K."",""Davies, H. O."",""Taechakumput, P."",""Taylor, S."",""Critchlow, G. W.""]]",[2006],"[""J. Mater. Chem.""]","[""J. M. Gaskell, A. C. Jones, H. C. Aspinall, S. Przybylak, P. R. Chalker, K. Black, H. O. Davies, P. Taechakumput, S. Taylor, and G. W. Critchlow, J. Mater. Chem. 16, 3854 (2006).""]" +62,Samarium,,,,[],[],[],[],[],[],[] +,Sm2O3,Sm(thd)3,O3,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +63,Europium,,,,[],[],[],[],[],[],[] +,Eu2O3,Eu(thd)3,O3,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_018_table_013/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_018_table_013/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..ead5259da27e91d77ebcf165c72a41b83dc08034 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_018_table_013/gold.csv @@ -0,0 +1,49 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +64,Gadolinium,,,,[],[],[],[],[],[],[] +,Gd2O3,Gd(thd)3,O3,"1583, 1864, and 1866","[1583,1864,1866]","[""10.1116/1.3025865"","""",""""]","[""Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors"",""Atomic layer deposition of praseodymium aluminum oxide for electrical applications"",""Neodymium oxide and neodymium aluminate thin films by atomic layer deposition""]","[[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""G omez, A."",""Bail on, L."",""Kukli, K."",""Niinist o, J."",""Ritala, M."",""Leskel a, M.""],[""de Rouffignac, P."",""Gordon, R. G.""],[""Kosola, A."",""P aiv asaari, J."",""Putkonen, M."",""Niinist o, L.""]]","[2009,2006,2005]","[""J. Vac. Sci. Technol., B"",""Chem. Vap. Deposition"",""Thin Solid Films""]","[""S. Due~nas, H. Cast\u0003an, H. Garc\u0003ıa, A. G\u0003omez, L. Bail\u0003on, K. Kukli, J. Niinist€o, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 389 (2009)."",""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006)."",""A. Kosola, J. P€aiv€asaari, M. Putkonen, and L. Niinist€o, Thin Solid Films 479, 152 (2005).""]" +,,Gd(CpMe)3,H2O,1866,[1866],"[""""]","[""Neodymium oxide and neodymium aluminate thin films by atomic layer deposition""]","[[""Kosola, A."",""P aiv asaari, J."",""Putkonen, M."",""Niinist o, L.""]]",[2005],"[""Thin Solid Films""]","[""A. Kosola, J. P€aiv€asaari, M. Putkonen, and L. Niinist€o, Thin Solid Films 479, 152 (2005).""]" +,,Gd(mmp)3-tetraglyme,H2O,1867,[1867],"[""10.1016/j.jcrysgro.2005.08.002""]","[""Gadolinium oxide thin films by atomic layer deposition""]","[[""Niinisto, J."",""Petrova, N."",""Putkonen, M."",""Niinisto, L."",""Arstila, K."",""Sajavaara, T.""]]",[2005],"[""J. Cryst. Growth""]","[""J. Niinist€o, N. Petrova, M. Putkonen, L. Niinist€o, K. Arstila, and T. Sajavaara, J. Cryst. Growth 285, 191 (2005).""]" +,,Gd(dmb)3,H2O,96 and 1868–1870,"[96,1868,1869,1870]","[""10.1149/1.2975828"","""","""",""""]","[""Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors"",""Deposition of HfO2, Gd2O3 and PrOx by liquid injection ALD techniques"",""Atomic layer deposition of gadolinium oxide film"",""Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics""]","[[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""G omez, A."",""Bail on, L."",""Kukli, K."",""Aarik, J."",""Ritala, M."",""Leskel a, M.""],[""Potter, R. J."",""Chalker, P. R."",""Manning, T. D."",""Aspinall, H. C."",""Loo, Y. F."",""Jones, A. C."",""Smith, L. M."",""Critchlow, G. W."",""Schumacher, M.""],[""Kukli, K."",""Hatanp a a, T."",""Ritala, M."",""Leskel a, M.""],[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""G omez, A."",""Bail on, L."",""Kukli, K."",""Hatanp a a, T."",""Lu, J."",""Ritala, M."",""Leskel a, M.""]]","[2008,2005,2007,2007]","[""J. Electrochem. Soc."",""Chem. Vap. Deposition"",""Chem. Vap. Deposition"",""J. Electrochem. Soc.""]","[""S. Due~nas, H. Cast\u0003an, H. Garc\u0003ıa, A. G\u0003omez, L. Bail\u0003on, K. Kukli, J. Aarik, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 155, G241 (2008)."",""R. J. Potter, P. R. Chalker, T. D. Manning, H. C. Aspinall, Y. F. Loo, A. C. Jones, L. M. Smith, G. W. Critchlow, and M. Schumacher, Chem. Vap. Deposition 11, 159 (2005)."",""K. Kukli, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, Chem. Vap. Deposition 13, 546 (2007)."",""S. Due~nas, H. Cast\u0003an, H. Garc\u0003ıa, A. G\u0003omez, L. Bail\u0003on, K. Kukli, T. Hatanp€a€a, J. Lu, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 154, G207 (2007).""]" +,,Gd((iPrN)2\-CNMe2)3,H2O,1871–1873,"[1871,1872,1873]","[""10.1116/1.3021040"",""10.1021/ic801432b"",""""]","[""Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics"",""Synthesis, Characterization, and Thermal Properties of Homoleptic Rare-Earth Guanidinates: Promising Precursors for MOCVD and ALD of Rare-Earth Oxide Thin Films"",""Downscaling of defect-passivated Gd 2 O 3 thin films on p-Si(0 0 1) wafers grown by H 2 O-assisted atomic layer deposition""]","[[""Garc ia, H."",""Due nas, S."",""Cast an, H."",""G omez, A."",""Bail on, L."",""Barquero, R."",""Kukli, K."",""Ritala, M."",""Leskel a, M.""],[""Milanov, Andrian P."",""Fischer, Roland A."",""Devi, Anjana""],[""R Ranjith"",""A Laha"",""E Bugiel"",""H J Osten"",""K Xu"",""A P Milanov"",""A Devi""]]","[2009,2008,2010]","[""J. Vac. Sci. Technol., B"",""Inorg. Chem."",""Semicond. Sci. Technol.""]","[""H. Garc\u0003ıa, S. Due~nas, H. Cast\u0003an, A. G\u0003omez, L. Bail\u0003on, R. Barquero, K. Kukli, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 416 (2009)."",""A. P. Milanov, R. A. Fischer, and A. Devi, Inorg. Chem. 47, 11405 (2008)."",""R. Ranjith, A. Laha, E. Bugiel, H. J. Osten, K. Xu, A. P. Milanov, and A. Devi, Semicond. Sci. Technol. 25, 105001 (2010).""]" +66,Dysprosium,,,,[],[],[],[],[],[],[] +,Dy2O3,Dy(thd)3,O3,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +,,Dy(emd)3,O2,684,[684],"[""""]","[""ALD of scandium oxide from scandium Tris(N,N-'-diisopropylacetamidinate) and water""]","[[""de Rouffignac, P."",""Yousef, A. P."",""Kim, K. H."",""Gordon, R. G.""]]",[2006],"[""Electrochem. Solid-State Lett.""]","[""P. de Rouffignac, A. P. Yousef, K. H. Kim, and R. G. Gordon, Electrochem. Solid-State Lett. 9, F45 (2006).""]" +67,Holmium,,,,[],[],[],[],[],[],[] +,Ho2O3,Ho(thd)3,O3,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +68,Erbium,,,,[],[],[],[],[],[],[] +,Er2O3,Er(thd)3,O3,"1584, 1864, and 1874","[1584,1864,1874]","["""","""",""10.1021/ja909102j""]","[""In Situ Reaction Mechanism Studies on Atomic Layer Deposition of ZrO2 from (CpMe)2Zr(OMe)Me and Water or Ozone"",""Atomic layer deposition of praseodymium aluminum oxide for electrical applications"",""Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition""]","[[""Knapas, Kjell"",""Ritala, Mikko""],[""de Rouffignac, P."",""Gordon, R. G.""],[""Milanov, Andrian P."",""Xu, Ke"",""Laha, Apurba"",""Bugiel, Eberhard"",""Ranjith, Ramadurai"",""Schwendt, Dominik"",""Osten, H. Joerg"",""Parala, Harish"",""Fischer, Roland A."",""Devi, Anjana""]]","[2008,2006,2010]","[""Chem. Mater."",""Chem. Vap. Deposition"",""J. Am. Chem. Soc.""]","[""K. Knapas and M. Ritala, Chem. Mater. 20, 5698 (2008)."",""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006)."",""A. P. Milanov, K. Xu, A. Laha, E. Bugiel, R. Ranjith, D. Schwendt, H. J. Osten, H. Parala, R. A. Fischer, and A. Devi, J. Am. Chem. Soc. 132, 36 (2010).""]" +,,Er(thd)3,O2⚡,"1527, 1528, and 1530–1532","[1527,1528,1530,1531,1532]","["""","""","""","""",""""]","[""Electrochemiluminescence of Tb(III) chelates at optically transparent tunnel emission electrodes fabricated by atomic layer deposition"",""Controlled erbium incorporation and photoluminescence of Er-doped Y2O3"",""Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals"",""Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits"",""Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure""]","[[""H kansson, A."",""Helin, M."",""Putkonen, M."",""Jiang, Q."",""Kotiranta, A."",""Suomi, J."",""Niskanen, A. J."",""Ala-Kleme, T."",""Kulmala, S.""],[""Van, T. T."",""Chang, J. P.""],[""Van, T. T."",""Chang, J. P.""],[""Van, T. T."",""Hoang, J."",""Ostroumov, R."",""Wang, K. L."",""Bargar, J. R."",""Lu, J."",""Blom, H. O."",""Chang, J. P.""],[""Van, T. T."",""Bargar, J. R."",""Chang, J. P.""]]","[2005,2005,2005,2006,2006]","[""Anal. Chim. Acta"",""Appl. Phys. Lett."",""Surf. Sci."",""J. Appl. Phys."",""J. Appl. Phys.""]","[""M. Ha˚kansson, M. Helin, M. Putkonen, Q. Jiang, A. Kotiranta, J. Suomi, A. J. Niskanen, T. Ala-Kleme, and S. Kulmala, Anal. Chim. Acta 541, 135 (2005)."",""T. T. Van and J. P. Chang, Appl. Phys. Lett. 87, 011907 (2005)."",""T. T. Van and J. P. Chang, Surf. Sci. 596, 1 (2005)."",""T. T. Van, J. Hoang, R. Ostroumov, K. L. Wang, J. R. Bargar, J. Lu, H. O. Blom, and J. P. Chang, J. Appl. Phys. 100, 073512 (2006)."",""T. T. Van, J. R. Bargar, and J. P. Chang, J. Appl. Phys. 100, 023115 (2006).""]" +,,Er(CpMe)3,H2O,1875,[1875],"[""""]","[""Atomic layer deposition of rare earth oxides: erbium oxide thin films from eta -diketonate and ozone precursors""]","[[""J. P aiv asaari"",""M. Putkonen"",""T. Sajavaara"",""L. Niinist o""]]",[2004],"[""J. Alloys Compd.""]","[""J. P€aiv€asaari, M. Putkonen, T. Sajavaara, and L. Niinist€o, J. Alloys Compd. 374, 124 (2004).""]" +,,Er(tBuAMD)3,O3,1876,[1876],"[""10.1002/cvde.200506396""]","[""High growth rate of erbium oxide thin films in atomic layer deposition from (CpMe)(3)Er and water precursors""]","[[""Paivasaari, J."",""Niinisto, J."",""Arstila, K."",""Kukli, K."",""Putkonen, M."",""Niinisto, L.""]]",[2005],"[""Chem. Vap. Deposition""]","[""J. P€aiv€asaari, J. Niinist€o, K. Arstila, K. Kukli, M. Putkonen, and L. Niinist€o, Chem. Vap. Deposition 11, 415 (2005).""]" +69,Thulium,,,,[],[],[],[],[],[],[] +,Tm2O3,Tm(thd)3,O3,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +70,Ytterbium,,,,[],[],[],[],[],[],[] +,Yb2O3,Yb(thd)3,O3,1877,[1877],"[""""]","[""Synthesis, structure and properties of volatile lanthanide complexes containing amidinate ligands: application for Er2O3 thin film growth by atomic layer deposition""]","[[""P aiv asaari, J."",""Dezelah IV, C. L."",""Back, D."",""El-Kaderi, H. M."",""Heeg, M."",""Putkonen, M."",""Niinist o, L."",""Winter, C. H.""]]",[2005],"[""J. Mater. Chem.""]","[""J. P€aiv€asaari, C. L. Dezelah IV, D. Back, H. M. El-Kaderi, M. Heeg, M. Putkonen, L. Niinist€o, and C. H. Winter, J. Mater. Chem. 15, 4224 (2005).""]" +71,Lutetium,,,,[],[],[],[],[],[],[] +,Lu2O3,Lu(OiPr)3,H2O,1878,[1878],"[""10.1016/j.apsusc.2009.08.073""]","[""Atomic layer deposition of ytterbium oxide using beta-diketonate and ozone precursors""]","[[""Bosund, M."",""Mizohata, K."",""Hakkarainen, T."",""Putkonen, M."",""S oderlund, M."",""Honkanen, S."",""Lipsanen, H.""]]",[2009],"[""Appl. Surf. Sci.""]","[""M. Bosund, K. Mizohata, T. Hakkarainen, M. Putkonen, M. S€oderlund, S. Honkanen, and H. Lipsanen, Appl. Surf. Sci. 256, 847 (2009).""]" +,,Lu[Cp(SiMe3)]2Cl,H2O,1879 and 1880,"[1879,1880]","[""10.1063/1.3002373"",""""]","[""Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100)"",""Atomic-layer deposition of Lu _2 O _3""]","[[""Lu, H. L."",""Scarel, G."",""Lamagna, L."",""Fanciulli, M."",""Ding, Shi-Jin"",""Zhang, David Wei""],[""G. Scarel"",""E. Bonera"",""C. Wiemer"",""G. Tallarida"",""S. Spiga"",""M. Fanciulli"",""I. L. Fedushkin"",""H. Schumann"","". Lebedinskii"",""A. Zenkevich""]]","[2008,2004]","[""Appl. Phys. Lett."",""Appl. Phys. Lett.""]","[""H. L. Lu, G. Scarel, L. Lamagna, M. Fanciulli, S.-J. Ding, and D. W. Zhang, Appl. Phys. Lett. 93, 152906 (2008)."",""G. Scarel, E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, M. Fanciulli, I. L. Fedushkin, H. Schumann, Yu. Lebedinskii, and A. Zenkevich, Appl. Phys. Lett. 85, 630 (2004).""]" +,LuSixOy,Lu[N(SiMe3)2]3,H2O,1881 and 1882,"[1881,1882]","["""",""""]","[""Dielectric properties of high-kappa oxides: Theory and experiment for Lu2O3"",""Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu""]","[[""Bonera, E."",""Scarel, G."",""Fanciulli, M."",""Delugas, P."",""Fiorentini, V.""],[""Scarel, G."",""Wiemer, C."",""Tallarida, G."",""Spiga, S."",""Seguini, G."",""Bonera, E."",""Fanciulli, M."",""Lebedinskii, Y."",""Zenkevich, A."",""Pavia, G."",""Fedushkin, I. L."",""Fukin, G. K."",""Domrachev, G. A.""]]","[2005,2006]","[""Phys. Rev. Lett."",""J. Electrochem. Soc.""]","[""E. Bonera, G. Scarel, M. Fanciulli, P. Delugas, and V. Fiorentini, Phys. Rev. Lett. 94, 027602 (2005)."",""G. Scarel, C. Wiemer, G. Tallarida, S. Spiga, G. Seguini, E. Bonera, M. Fanciulli, Y. Lebedinskii, A. Zenkevich, G. Pavia, I. L. Fedushkin, G. K. Fukin, and G. A. Domrachev, J. Electrochem. Soc. 153, F271 (2006).""]" +,,Lu[N(SiMe3)2]3,O3,1881 and 1882,"[1881,1882]","["""",""""]","[""Dielectric properties of high-kappa oxides: Theory and experiment for Lu2O3"",""Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu""]","[[""Bonera, E."",""Scarel, G."",""Fanciulli, M."",""Delugas, P."",""Fiorentini, V.""],[""Scarel, G."",""Wiemer, C."",""Tallarida, G."",""Spiga, S."",""Seguini, G."",""Bonera, E."",""Fanciulli, M."",""Lebedinskii, Y."",""Zenkevich, A."",""Pavia, G."",""Fedushkin, I. L."",""Fukin, G. K."",""Domrachev, G. A.""]]","[2005,2006]","[""Phys. Rev. Lett."",""J. Electrochem. Soc.""]","[""E. Bonera, G. Scarel, M. Fanciulli, P. Delugas, and V. Fiorentini, Phys. Rev. Lett. 94, 027602 (2005)."",""G. Scarel, C. Wiemer, G. Tallarida, S. Spiga, G. Seguini, E. Bonera, M. Fanciulli, Y. Lebedinskii, A. Zenkevich, G. Pavia, I. L. Fedushkin, G. K. Fukin, and G. A. Domrachev, J. Electrochem. Soc. 153, F271 (2006).""]" +72,Hafnium,,,,[],[],[],[],[],[],[] +,HfO2,HfCl4,H2O,"92, 135, 154, 160, 168, 169, 171–173, 175, 188–190, 199, 221, 259, 310, 587, 741, 761, 1520, 1541, 1551, 1554–1562, 1566, 1610, 1839, and 1883–1974","[92,135,154,160,168,169,171,172,173,175,188,189,190,199,221,259,310,587,741,761,1520,1541,1551,1554,1555,1556,1557,1558,1559,1560,1561,1562,1566,1610,1839,1883,1884,1885,1886,1887,1888,1889,1890,1891,1892,1893,1894,1895,1896,1897,1898,1899,1900,1901,1902,1903,1904,1905,1906,1907,1908,1909,1910,1911,1912,1913,1914,1915,1916,1917,1918,1919,1920,1921,1922,1923,1924,1925,1926,1927,1928,1929,1930,1931,1932,1933,1934,1935,1936,1937,1938,1939,1940,1941,1942,1943,1944,1945,1946,1947,1948,1949,1950,1951,1952,1953,1954,1955,1956,1957,1958,1959,1960,1961,1962,1963,1964,1965,1966,1967,1968,1969,1970,1971,1972,1973,1974]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1016/j.mee.2009.03.090"","""","""","""",""10.1021/cm900820p"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1063/1.2164417"","""","""","""","""","""","""","""","""","""","""","""","""","""",""DOI: 10.1016/j.mssp.2008.10.008"","""","""","""",""DOI: 10.1016/j.mssp.2008.09.004"",""10.1103/PhysRevB.78.245314"",""10.1063/1.3021374"",""10.1149/1.2980427"",""10.1149/1.2979144"",""10.1063/1.2978362"",""10.3365/eml.2009.12.187"","""",""10.1063/1.3125510"",""10.1002/adem.200800348"",""10.1149/1.3097193"",""10.1116/1.3021023"",""10.1116/1.3021036"",""10.1063/1.3357283"",""10.1134/S1063784210070200"",""DOI: 10.1016/j.elspec.2010.04.005""]","[""Electron probe microanalysis of HfO2 thin films on conductive and insulating substrates"",""Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues"",""Surface treatment for high-quality Al _2 O _3 and HfO _2 layers deposited on HF -dipped surface by atomic layer deposition"",""Effect of Hf Sources, Oxidizing Agents, and NH _3 / Ar Plasma on the Properties of HfAlO _x Films Prepared by Atomic Layer Deposition"",""Nitrogen incorporation engineering and electrical properties of high-k gate dielectric ( HfO _2 and Al _2 O _3 ) films on Si (100) substrate"",""X-ray photoelectron spectroscopy characterisation of high-k dielectric Al _2 O _3 and HfO _2 layers deposited on SiO _2 /Si surface"",""Physical characterization of mixed HfAlO _x layers by complementary analysis techniques"",""VUV spectroscopic ellipsometry applied to the characterization of high- k dielectrics"",""Comparison of the electrical properties of high-k gate dielectric ( HfO _2 and Al _2 O _3 ) films with Pt or n(+)-polycrystalline-silicon gate"",""Structural and electrical characterization of Al _2 O _3 /HfO _2 /Al _2 O _3 on strained SiGe"",""Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition"",""Characteristics of hafnium-aluminum-oxide thin films deposited by using atomic layer deposition with various aluminum compositions"",""Characteristics of an Al2O3/HfO2 bilayer deposited by atomic layer deposition for gate dielectric applications"",""Comparison of properties of an Al2O3 thin layers grown with remote O-2 plasma, H2O, or O-3 as oxidants in an ALD process for HfO2 gate dielectrics"",""A comparison of Al2O3/HfO2 and Al2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications"",""Atomic-layer-deposited nanostructures for graphene-based nanoelectronics"",""Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning"",""Atomic layer deposition of SiO _2 films on BN particles using sequential surface reactions"",""Surface of TiO _2 during atomic layer deposition as determined by incremental dielectric reflection"",""A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition"",""Intermediate-Temperature Ceramic Fuel Cells with Thin Film Yttrium-Doped Barium Zirconate Electrolytes"",""Properties of (Nb1-xTax)(z)O-5 solid solutions and (Nb1-xTax)(2)O-5-ZrO2 nanolaminates grown by atomic layer epitaxy"",""Effects of growth temperature on the properties of atomic layer deposition grown ZrO _2 films"",""Characteristics of ZrO _2 films deposited by using the atomic layer deposition method"",""Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO _2 gate dielectrics on Si"",""Microstructural evolution of ZrO _2 -HfO _2 nanolaminate structures grown by atomic layer deposition"",""Comparative study on electrical and microstructural characteristics of ZrO2 and HfO2 grown by atomic layer deposition"",""Raman and Brillouin scattering spectroscopy studies of atomic layer-deposited ZrO2 and kHfO(2) thin films"",""Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films"",""Atomic layer deposition of ultrathin metal-oxide films for nano-scale device applications"",""Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films"",""Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide"",""Preparation of ZrO _2 nano-films by an alternate reaction using ZrCl _4 and O _2 under atmospheric pressure"",""Deposition and plasma measurements of Zr-oxide films with low impurity concentrations by remote PEALD"",""Atomic Layer Deposition of Lanthanum Oxide Films for High- appa Gate Dielectrics"",""[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films"",""Electrical properties of tantalum based composite oxide films"",""Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy"",""Tailoring the dielectric properties of HfO _2 -- Ta _2 O _5 nanolaminates"",""Influence of substrate temperature on atomic layer growth and properties of HfO _2 thin films"",""Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition"",""Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures"",""Chemical interaction between atomic-layer-deposited HfO _2 thin films and the Si substrate"",""Thermal stability and structural characteristics of HfO _2 films on Si (100) grown by atomic-layer deposition"",""Nucleation and growth of atomic layer deposited HfO _2 gate dielectric layers on chemical oxide ( Si--O--H ) and thermal oxide ( SiO _2 or Si--O--N ) underlayers"",""Ultrathin HfO _2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications"",""Morphology and crystallization kinetics in HfO _2 thin films grown by atomic layer deposition"",""Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO _2 deposited by atomic layer deposition"",""Electrical and physico-chemical characterization of HfO _2 /SiO _2 gate oxide stacks prepared by atomic layer deposition"",""Atomic layer deposition of HfO _2 thin films and nanolayered HfO _2 -Al _2 O _3 -Nb _2 O _5 dielectrics"",""Comparison of HfO _2 films grown by atomic layer deposition using HfCl _4 and H _2 O or O _3 as the oxidant"",""Characterization of ultra-thin HfO _2 gate oxide prepared by using atomic layer deposition"",""Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water"",""Combining grazing incidence X -ray diffraction and X -ray reflectivity for the evaluation of the structural evolution of HfO _2 thin films with annealing"",""Effects of precursors on nucleation in atomic layer deposition of HfO _2"",""Study of thin hafnium oxides deposited by atomic layer deposition"",""Study of HfO _2 films deposited on strained Si _ 1-x Ge _x layers by atomic layer deposition"",""Characterization of HfO _2 /Si (001) interface with high-resolution Rutherford backscattering spectroscopy"",""Impact of Deposition and Annealing Temperatures on Material and Electrical Characteristics of ALD HfO _2"",""Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films"",""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition"",""Optical characterization of HfO _2 thin films grown by atomic layer deposition"",""Microstructure and thermal stability of HfO _2 gate dielectric deposited on Ge (100)"",""Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO _2 transistors"",""Trends of structural and electrical properties in atomic layer deposited HfO _2 films"",""Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates"",""Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition"",""Hafnium oxide films by atomic layer deposition for high- appa gate dielectric applications: analysis of the density of nanometer-thin films"",""Atomic Layer Deposition of Hafnium Oxide on Germanium substrates"",""Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD"",""Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge"",""Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature"",""Atomic layer deposition and characterization of HfO2 films on noble metal film substrates"",""Thermal stability of Al2O3-HfO2 laminate, Hf-Al-O alloy and HfO2 thin films on Si"",""Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-kappa dielectric HfO2 layers"",""HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition"",""Surface treatment for the atomic layer deposition of HfO2 on silicon"",""Characteristics of HfO2-Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature"",""Optical band gaps and composition dependence of hafnium-aluminate thin films grown by atomic layer chemical vapor deposition"",""Investigation of the initial stage of growth of HfO2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering"",""Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes"",""Absence of magnetism in hafnium oxide films"",""Electrical characteristics of 8-angstrom EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions"",""Impact of film properties of atomic layer deposited HfO2 resulting from annealing with a TiN capping layer"",""Impact of Zr addition on properties of atomic layer deposited HfO2"",""Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition"",""Energy band alignment of HfO2 on Ge"",""Nucleation and growth behavior of atomic layer deposited HfO2 films on silicon oxide starting surfaces"",""Transmission electron microscopy studies of HfO _2 thin films grown by chloride-based atomic layer deposition"",""Physical and electrical properties of nanolaminated HfO2/LaAlO3/HfO2 dielectric on Si"",""Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses"",""Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility"",""Using scaling laws to understand the growth mechanism of atomic layer deposited WNxCy films on methyl-terminated surfaces"",""Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation"",""InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition"",""Hafnium oxide gate dielectrics on sulfur-passivated germanium"",""X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O-K absorption edge"",""Diffusion reaction of oxygen in HfO2/SiO2/Si stacks"",""Scaling to sub-1 nm equivalent oxide thickness with hafnium oxide deposited by atomic layer deposition"",""Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf6Ta2O17 gate dielectrics"",""Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance"",""Single band electronic conduction in hafnium oxide prepared by atomic layer deposition"",""Characteristics of atomic-layer-deposited thin HfxZr1-xO2 gate dielectrics"",""Electrical and interfacial characterization of atomic layer deposited high-kappa gate dielectrics on GaAs for advanced CMOS devices"",""Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition"",""Initial nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis"",""Silicon orientation effects in the atomic layer deposition of Hafnium oxide"",""XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors"",""The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films"",""A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon"",""S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates"",""Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams"",""Combined experimental and theoretical study of thin hafnia films"",""Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2"",""HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle"",""Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation"",""The initial atomic layer deposition of HfO2/Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy"",""Effects of Initial Growth Mode on the Electrical Properties of Atomic-Layer-deposited HfO2 Films"",""Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS"",""Annealing behavior of atomic layer deposited HfO2 films studied by synchrotron x-ray reflectivity and grazing incidence small angle scattering"",""In-Situ Studies of ALD Growth of Hafnium Oxide Films"",""The Importance of Moisture Control for EOT Scaling of Hf-Based Dielectrics"",""HfO2/Si interface formation in atomic layer deposition films: An in situ investigation"",""Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application"",""Resistance switching in HfO2 metal-insulator-metal devices"",""X-ray spectroscopic examination of thin HfO2 films ALD- and MOCVD-grown on the Si(100) surface"",""XPS and depth resolved SXES study of HfO2/Si interlayers""]","[[""Lulla, M."",""Asari, J."",""Aarik, J."",""Kukli, K."",""Rammula, R."",""Tapper, U."",""Kauppinen, E."",""Sammelselg, V.""],[""E. P. Gusev"",""E. Cartier"",""D. A. Buchanan"",""M. Gribelyuk"",""M. Copel"",""H. Okorn-Schmidt"",""C. D'Emic""],[""J.-F. Damlencourt"",""O. Renault"",""A. Chabli"",""F. Martin"",""M.-N. S em eria""],[""T. Kawahara"",""K. Torii"",""R. Mitsuhashi"",""A. Muto"",""A. Horiuchi"",""H. Ito"",""H. Kitajima""],[""C. Lee"",""J. Choi"",""M. Cho"",""J. Park"",""C. S. Hwang"",""H. J. Kim"",""J. Jeong""],[""R. G. Vitchev"",""J. J. Pireaux"",""T. Conard"",""H. Bender"",""J. Wolstenholme"",""C. Defranoux""],[""H. Bender"",""Th. Conard"",""O. Richard"",""B. Brijs"",""J. P etry"",""W. Vandervorst"",""C. Defranoux"",""P. Boher"",""N. Rochat"",""C. Wyon"",""P. Mack"",""J. Wolstenholme"",""R. Vitchev"",""L. Houssiau"",""J.-J. Pireaux"",""A. Bergmaier"",""G. Dollinger""],[""P. Boher"",""C. Defranoux"",""P. Heinrich"",""J. Wolstenholme"",""H. Bender""],[""C. Lee"",""C. S. Hwang"",""H. J. Kim""],[""D. Wu"",""J. Lu"",""E. Vainonen-Ahlgren"",""E. Tois"",""M. Tuominen"",""M. Ostling"",""S.-L. Zhang""],[""Park, M."",""Koo, J."",""Kim, J."",""Jeon, H."",""Bae, C."",""Krug, C.""],[""Koo, J."",""Lee, J."",""Kim, S."",""Do Kim, Y."",""Jeon, H."",""Kim, D. S."",""Kim, Y.""],[""Koo, J."",""Jeon, H.""],[""Cho, M."",""Park, H. B."",""Park, J."",""Lee, S. W."",""Hwang, C. S."",""Jeong, J."",""Kang, H. S."",""Kim, Y. W.""],[""Kim, I."",""Koo, J."",""Lee, J."",""Jeon, H.""],[""Xuan, Y."",""Wu, Y. Q."",""Shen, T."",""Qi, M."",""Capano, M. A."",""Cooper, J. A."",""Ye, P. D.""],[""Caymax, Matty"",""Brammertz, Guy"",""Delabie, Annelies"",""Sioncke, Sonja"",""Lin, Dennis"",""Scarrozza, Marco"",""Pourtois, Geoffrey"",""Wang, Wei-E"",""Meuris, Marc"",""Heyns, Marc""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""A. Rosental"",""A. Tarre"",""P. Adamson"",""A. Gerst"",""A. Kasikov"",""A. Niilisk""],[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""San Andr es, E."",""Toledano-Luque, M."",""M artil, I."",""Gonz alez-D iaz, G."",""Kukli, K."",""Uustare, T."",""Aarik, J.""],[""Shim, Joon Hyung"",""Park, Joong Sun"",""An, Jihwan"",""Guer, Turgut M."",""Kang, Sangkyun"",""Prinz, Fritz B.""],[""K. Kukli"",""M. Ritala"",""M. Leskel a""],[""G. Scarel"",""S. Ferrari"",""S. Spiga"",""C. Wiemer"",""G. Tallarida"",""M. Fanciulli""],[""J. Lee"",""J. Koo"",""H. S. Sim"",""H. Jeon"",""Y. Won""],[""J. Okabayashi"",""S. Toyoda"",""H. Kumigashira"",""M. Oshima"",""K. Usuda"",""M. Niwa"",""G. L. Liu""],[""Kim, H. S."",""McIntyre, P. C."",""Saraswat, K. C.""],[""Kim, H."",""Saraswat, K. C."",""McIntyre, P. C.""],[""Tkachev, S. N."",""Manghnani, M. H."",""Niilisk, A."",""Aarik, J."",""M andar, H.""],[""Tkachev, S. N."",""Manghnani, M. H."",""Niilisk, A."",""Aarik, J."",""M andar, H.""],[""Kim, H."",""McIntyre, P. C.""],[""Aarik, J."",""Aidla, A."",""Kasikov, A."",""M andar, H."",""Rammula, R."",""Sammelselg, V.""],[""Delabie, A."",""Bellenger, F."",""Houssa, M."",""Conard, T."",""Van Elshocht, S."",""Caymax, M."",""Heyns, M."",""Meuris, M.""],[""N. Yoshii"",""N. Takahashi"",""T. Nakamura"",""M. Yoshioka""],[""Kim, J. Y."",""Kim, S. H."",""Seo, H."",""Kim, J. H."",""Jeon, H.""],[""W. He"",""S. Schuetz"",""R. Solanki"",""J. Belot"",""J. McAndrew""],[""Scarel, G."",""Wiemer, C."",""Fanciulli, M."",""Fedushkin, I. L."",""Fukin, G. K."",""Domrachev, G. A."",""Lebedinskii, Y."",""Zenkevich, A."",""Pavia, G.""],[""H. Kattelus"",""M. Ylilammi"",""J. Salmi"",""T. Ranta-Aho"",""E. Nyk anen"",""I. Suni""],[""M. Ritala"",""M. Leskel a"",""L. Niinist o"",""T. Prohaska"",""G. Friedbacher"",""M. Grasserbauer""],[""K. Kukli"",""J. Ihanus"",""M. Ritala"",""M. Leskel a""],[""J. Aarik"",""A. Aidla"",""A.-A. Kiisler"",""T. Uustare"",""V. Sammelselg""],[""J. Aarik"",""A. Aidla"",""H. Mandar"",""V. Sammelselg"",""T. Uustare""],[""J. Aarik"",""A. Aidla"",""H. M andar"",""T. Uustare"",""K. Kukli"",""M. Schuisky""],[""M. Cho"",""J. Park"",""H. B. Park"",""C. S. Hwang"",""J. Jeong"",""K. S. Hyun""],[""M.-H. Cho"",""Y. S. Roh"",""C. N. Whang"",""K. Jeong"",""S. W. Nahm"",""D.-H. Ko"",""J. H. Lee"",""N. I. Lee"",""K. Fujihara""],[""M. L. Green"",""M. Y. Ho"",""B. Busch"",""G. D. Wilk"",""T. Sorsch"",""T. Conard"",""B. Brijs"",""W. Vandervorst"",""P. I. Raisanen"",""D. Muller"",""M. Bude"",""J. Grazul""],[""E. P. Gusev"",""Cabral, Jr., C."",""M. Copel"",""C. D'Emic"",""M. Gribelyuk""],[""M.-Y. Ho"",""H. Gong"",""G. D. Wilk"",""B. W. Busch"",""M. L. Green"",""P. M. Voyles"",""D. A. Muller"",""M. Bude"",""W. H. Lin"",""A. See"",""M. E. Loomans"",""S. K. Lahiri"",""P. I. R ais anen""],[""G. D. Wilk"",""D. A. Muller""],[""J.-F. Damlencourt"",""O. Renault"",""D. Samour"",""A.-M. Papon"",""C. Leroux"",""F. Martin"",""S. Marthon"",""M.-N. S em eria"",""X. Garros""],[""K. Kukli"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""D. C. Gilmer"",""R. Hedge"",""R. Rai"",""L. Prabhu""],[""H. B. Park"",""M. Cho"",""J. Park"",""S. W. Lee"",""C. S. Hwang"",""J.-P. Kim"",""J.-H. Lee"",""N.-I. Lee"",""H.-K. Kang"",""J.-C. Lee"",""S.-J. Oh""],[""T. Lee"",""J. Ahn"",""J. Oh"",""Y. Kim"",""Y. B. Kim"",""D. K. Choi"",""J. Jung""],[""R. L. Puurunen""],[""C. Wiemer"",""S. Ferrari"",""M. Fanciulli"",""G. Pavia"",""L. Lutterotti""],[""J. Aarik"",""A. Aidla"",""A. Kikas"",""T. K a ambre"",""R. Rammula"",""P. Ritslaid"",""T. Uustare"",""V. Sammelselg""],[""J.-J. Ganem"",""I. Trimaille"",""I. C. Vickridge"",""D. Blin"",""F. Martin""],[""J.-F. Damlencourt"",""O. Weber"",""O. Renault"",""J.-M. Hartmann"",""C. Poggi"",""F. Ducroquet"",""T. Billon""],[""K. Nakajima"",""S. Joumori"",""M. Suzuki"",""K. Kimura"",""T. Osipowicz"",""K. L. Tok"",""J. Z. Zheng"",""A. See"",""B. C. Zhang""],[""D. Triyoso"",""R. Liu"",""D. Roan"",""M. Ramon"",""N. V. Edwards"",""R. Gregory"",""D. Werho"",""J. Kulik"",""G. Tam"",""E. Irwin"",""X-D. Wang"",""L. B. La"",""C. Hobbs"",""R. Garcia"",""J. Baker"",""B. E. White, Jr."",""P. Tobin""],[""K. Kukli"",""J. Aarik"",""M. Ritala"",""T. Uustare"",""T. Sajavaara"",""J. Lu"",""J. Sundqvist"",""A. Aidla"",""L. Pung"",""A. H rsta"",""M. Leskel a""],[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""],[""J. Aarik"",""H. M andar"",""M. Kirm"",""L. Pung""],[""E. P. Gusev"",""H. Shang"",""M. Copel"",""M. Gribelyuk"",""C. D'Emic"",""P. Kozlowski"",""T. Zabel""],[""P. S. Lysaght"",""J. J. Peterson"",""B. Foran"",""C. D. Young"",""G. Bersuker"",""H. R. Huff""],[""G. Scarel"",""S. Spiga"",""C. Wiemer"",""G. Tallarida"",""S. Ferrari"",""M. Fanciulli""],[""S. Due nas"",""H. Cast an"",""H. Garc ia"",""J. Barbolla"",""K. Kukli"",""M. Ritala"",""M. Leskel a""],[""R. Chen"",""H. Kim"",""P. C. McIntyre"",""S. F. Bent""],[""R. L. Puurunen"",""A. Delabie"",""S. Van Elshocht"",""M. Caymax"",""M. L. Green"",""B. Brijs"",""O. Richard"",""H. Bender"",""T. Conard"",""I. Hoflijk"",""W. Vandervorst"",""D. Hellin"",""D. Vanhaeren"",""C. Zhao"",""S. De Gendt"",""M. Heyns""],[""A. Delabie"",""R. L. Puurunen"",""B. Brijs"",""M. Caymax"",""T. Conard"",""B. Onsia"",""O. Richard"",""W. Vandervorst"",""C. Zhao"",""M. M. Viitanen"",""H. H. Brongersma"",""M. de Ridder"",""L. V. Goncharova"",""E. Garfunkel"",""T. Gustafsson"",""W. Tsai"",""M. M. Heyns"",""M. Meuris""],[""Triyoso, D. H."",""Ramon, M."",""Hegde, R. I."",""Roan, D."",""Garcia, R."",""Baker, J."",""Wang, X. D."",""Fejes, P."",""White, B. E."",""Tobin, P. J.""],[""Spiga, S."",""Wiemer, C."",""Tallarida, G."",""Scarel, G."",""Ferrari, S."",""Seguini, G."",""Fanciulli, M.""],[""K. Kukli"",""J. Aarik"",""T. Uustare"",""J. Lu"",""M. Ritala"",""A. Aidla"",""L. Pung"",""A. H rsta"",""M. Leskel a"",""A. Kikas"",""V aino Sammelselg""],[""Kukli, K."",""Aaltonen, T."",""Aarik, J."",""Lu, J."",""Ritala, M."",""Ferrari, S."",""H rsta, A."",""Leskel a, M.""],[""Jin, H."",""Oh, S. K."",""Kang, H. J."",""Lee, S. W."",""Lee, Y. S."",""Lim, K. Y.""],[""Hellin, D."",""Delabie, A."",""Puurunen, R. L."",""Beaven, P."",""Conard, T."",""Brijs, B."",""De Gendt, S."",""Vinckier, C.""],[""Frank, M. M."",""Wilk, G. D."",""Starodub, D."",""Gustafsson, T."",""Garfunkel, E."",""Chabal, Y. J."",""Grazul, J."",""Muller, D. A.""],[""Damlencourt, J. F."",""Renault, O."",""Martin, F."",""S em eria, M. N."",""Billon, T."",""Bedu, F.""],[""Cho, M. H."",""Chung, K. B."",""Whang, C. N."",""Ko, D. H."",""Kim, H. S.""],[""Nguyen, N. V."",""Sayan, S."",""Levin, I."",""Ehrstein, J. R."",""Baumvol, I. J. R."",""Driemeier, C."",""Krug, C."",""Wielunski, L."",""Hung, R. Y."",""Diebold, A.""],[""Chang, H. S."",""Hwang, H."",""Cho, M. H."",""Moon, D. W.""],[""Agustin, M. P."",""Fonseca, L. R. C."",""Hooker, J. C."",""Stemmer, S.""],[""Abraham, D. W."",""Frank, M. M."",""Guha, S.""],[""Ragnarsson, L. A."",""Severi, S."",""Trojman, L."",""Johnson, K. D."",""Brunco, D. P."",""Aoulaiche, M."",""Houssa, M."",""Kauerauf, T."",""Degraeve, R."",""Delabie, A."",""Kaushik, V. S."",""De Gendt, S."",""Tsai, W."",""Groeseneken, G."",""De Meyer, K."",""Heyns, M.""],[""Triyoso, D. H."",""Tobin, P. J."",""White, B. E."",""Gregory, R."",""Wang, X. D.""],[""Triyoso, D. H."",""Hegde, R. I."",""Schaeffer, J. K."",""Roan, D."",""Tobin, P. J."",""Samavedam, S. B."",""White, B. E."",""Gregory, R."",""Wang, X. D.""],[""Sreenivasan, R."",""McIntyre, P. C."",""Kim, H."",""Saraswat, K. C.""],[""Perego, M."",""Seguini, G."",""Fanciulli, M.""],[""Nyns, L."",""Hall, L."",""Conard, T."",""Delabie, A."",""Deweerd, W."",""Heyns, M."",""Van Elshocht, S."",""Van Hoornick, N."",""Vinckier, C."",""De Gendt, S.""],[""D.R.G. Mitchell"",""A. Aidla"",""J. Aarik""],[""Liang, Y."",""Theodore, N. D."",""Curless, J."",""Tracy, C.""],[""Miotti, L."",""Driemeier, C."",""Tatsch, F."",""Radtke, C."",""Baumvol, I. J. R.""],[""Kirsch, P. D."",""Quevedo-Lopez, M. A."",""Li, H. J."",""Senzaki, Y."",""Peterson, J. J."",""Song, S. C."",""Krishnan, S. A."",""Moumen, N."",""Barnett, J."",""Bersuker, G."",""Hung, P. Y."",""Lee, B. H."",""Lafford, T."",""Wang, Q."",""Gay, D."",""Ekerdt, J. G.""],[""Hoyas, A. M."",""Schuhmacher, J."",""Whelan, C. M."",""Landaluce, T. F."",""Vanhaeren, D."",""Maex, K.""],[""Green, M. L."",""Allen, A. J."",""Li, X."",""Wang, J."",""Ilavsky, J."",""Delabie, A."",""Puurunen, R. L."",""Brijs, B.""],[""Goel, N."",""Majhi, P."",""Chui, C. O."",""Tsai, W."",""Choi, D."",""Harris, J. S.""],[""Frank, M. M."",""Koester, S. J."",""Copel, M."",""Ott, J. A."",""Paruchuri, V. K."",""Shang, H. L."",""Loesing, R.""],[""Filatova, E. O."",""Jonnard, P."",""Andre, J. M.""],[""Ferrari, S."",""Fanciulli, M.""],[""Delabie, A."",""Caymax, M."",""Brijs, B."",""Brunco, D. P."",""Conard, T."",""Sleeckx, E."",""Van Elshocht, S."",""Ragnarsson, L. A."",""De Gendt, S."",""Heyns, M. M.""],[""Triyoso, D. H."",""Yu, Z."",""Gregory, R."",""Moore, K."",""Fejes, P."",""Schauer, S.""],[""Stesmans, A."",""Afanas'ev, V. V.""],[""Shaimeev, S."",""Gritsenko, V."",""Kukli, K."",""Wong, H."",""Lee, E. H."",""Kim, C.""],[""Triyoso, D. H."",""Hegde, R. I."",""Schaeffer, J. K."",""Gregory, R."",""Wang, X. D."",""Canonico, M."",""Roan, D."",""Hebert, E. A."",""Kim, K."",""Jiang, J."",""Rai, R."",""Kaushik, V."",""Samavedam, S. B."",""Rochat, N.""],[""Dalapati, G. K."",""Tong, Y."",""Loh, W. Y."",""Mun, H. K."",""Cho, B. J.""],[""Baldovino, S."",""Spiga, S."",""Scarel, G."",""Fanciulli, M.""],[""Chung, K. B."",""Whang, C. N."",""Chang, H. S."",""Moon, D. W."",""Cho, M. H.""],[""Nyns, L."",""Ragnarsson, L. A."",""Hall, L."",""Delabie, A."",""Heyns, M."",""Van Elshocht, S."",""Vinckier, C."",""Zimmerman, P."",""De Gendt, S.""],[""M. Perego"",""G. Seguini"",""M. 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Aidla, Thin Solid Films 427, 147 (2003)."",""J. Lu, J. Aarik, J. Sundqvist, K. Kukli, A. Ha˚rsta, and J.-O. Carlsson, J. Cryst. Growth 273, 510 (2005).""]" +,,HfI4,O2 q,1988,[1988],"[""""]","[""Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate""]","[[""Lu, J."",""Aarik, J."",""Sundqvist, J."",""Kukli, K."",""H rsta, A."",""Carlsson, J. O.""]]",[2005],"[""J. Cryst. Growth""]","[""J. Lu, J. Aarik, J. Sundqvist, K. Kukli, A. Ha˚rsta, and J. O. Carlsson, J. Cryst. Growth 273, 510 (2005).""]" +,,HfCp2Me2,H2O,1989 and 1990,"[1989,1990]","["""",""10.1039/b417866c""]","[""Surface chemistry of HfI4 on Si(100)-(2 x 1) studied by core level photoelectron spectroscopy"",""Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water""]","[[""Sandell, A."",""Karlsson, P. G."",""Richter, J. H."",""Blomquist, J."",""Uvdal, P.""],[""Niinisto, J."",""Putkonen, M."",""Niinisto, L."",""Stoll, S. L."",""Kukli, K."",""Sajavaara, T."",""Ritala, M."",""Leskela, M.""]]","[2007,2005]","[""Surf. Sci."",""J. Mater. Chem.""]","[""A. Sandell, P. G. Karlsson, J. H. Richter, J. Blomquist, and P. Uvdal, Surf. Sci. 601, 917 (2007)."",""J. Niinist€o, M. Putkonen, L. Niinist€o, S. L. Stoll, K. Kukli, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Mater. Chem. 15, 2271 (2005).""]" +,,HfCp2Me2,O3,1990,[1990],"[""10.1039/b417866c""]","[""Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water""]","[[""Niinisto, J."",""Putkonen, M."",""Niinisto, L."",""Stoll, S. L."",""Kukli, K."",""Sajavaara, T."",""Ritala, M."",""Leskela, M.""]]",[2005],"[""J. Mater. Chem.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, S. L. Stoll, K. Kukli, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Mater. Chem. 15, 2271 (2005).""]" +,,HfCp2Cl2,H2O,1990,[1990],"[""10.1039/b417866c""]","[""Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water""]","[[""Niinisto, J."",""Putkonen, M."",""Niinisto, L."",""Stoll, S. L."",""Kukli, K."",""Sajavaara, T."",""Ritala, M."",""Leskela, M.""]]",[2005],"[""J. Mater. Chem.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, S. L. Stoll, K. Kukli, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Mater. Chem. 15, 2271 (2005).""]" +,,HfCp2Cl2,O3,1990,[1990],"[""10.1039/b417866c""]","[""Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water""]","[[""Niinisto, J."",""Putkonen, M."",""Niinisto, L."",""Stoll, S. L."",""Kukli, K."",""Sajavaara, T."",""Ritala, M."",""Leskela, M.""]]",[2005],"[""J. Mater. Chem.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, S. L. Stoll, K. Kukli, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Mater. Chem. 15, 2271 (2005).""]" +,,Hf(CpMe)2Me2,H2O,1579,[1579],"[""""]","[""Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films""]","[[""Jinesh, K. B."",""Besling, W. F. A."",""Tois, E."",""Klootwijk, J. H."",""Wolters, R."",""Dekkers, W."",""Kaiser, M."",""Bakker, F."",""Tuominen, M."",""Roozeboom, F.""]]",[2008],"[""Appl. Phys. Lett.""]","[""K. B. Jinesh, W. F. A. Besling, E. Tois, J. H. Klootwijk, R. Wolters, W. Dekkers, M. Kaiser, F. Bakker, M. Tuominen, and F. Roozeboom, Appl. Phys. Lett. 93, 062903 (2008).""]" +,,Hf(CpMe)2Me2,O3,1991,[1991],"[""10.1149/1.2162447""]","[""HfO2 films grown by ALD using cyclopentadienyl-type precursors and H2O or O-3 as oxygen source""]","[[""Niinisto, J."",""Putkonen, M."",""Niinisto, L."",""Arstila, K."",""Sajavaara, T."",""Lu, J."",""Kukli, K."",""Ritala, M."",""Leskela, M.""]]",[2006],"[""J. Electrochem. Soc.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, K. Arstila, T. Sajavaara, J. Lu, K. Kukli, M. Ritala, and M. 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R."",""Black, K."",""Werner, M."",""Taechakumput, P."",""Taylor, S."",""Heys, P. N."",""Odedra, R.""]]",[2007],"[""Chem. Vap. Deposition""]","[""R. O’Kane, J. Gaskell, A. C. Jones, P. R. Chalker, K. Black, M. Werner, P. Taechakumput, S. Taylor, P. N. Heys, and R. Odedra, Chem. Vap. Deposition 13, 609 (2007).""]" +,,Hf(Cp2CMe2)Me2,O3,1585,[1585],"[""10.1149/1.3478117""]","[""Investigation of ZrO2-Gd2O3 Based High-k Materials as Capacitor Dielectrics""]","[[""J ogi, Indrek"",""Tamm, Aile"",""Kukli, Kaupo"",""Kemell, Marianna"",""Lu, Jun"",""Sajavaara, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2010],"[""J. Electrochem. Soc.""]","[""I. J~ogi, A. Tamm, K. Kukli, M. Kemell, J. Lu, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 157, G202 (2010).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_019_table_014/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_019_table_014/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..a0de18df50da9c02e86c35824430b17548d453fb --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_019_table_014/gold.csv @@ -0,0 +1,53 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,Hf(Cp2CMe2)\-Me(OMe),O3,1585,[1585],"[""10.1149/1.3478117""]","[""Investigation of ZrO2-Gd2O3 Based High-k Materials as Capacitor Dielectrics""]","[[""J ogi, Indrek"",""Tamm, Aile"",""Kukli, Kaupo"",""Kemell, Marianna"",""Lu, Jun"",""Sajavaara, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2010],"[""J. Electrochem. Soc.""]","[""I. J~ogi, A. Tamm, K. Kukli, M. Kemell, J. Lu, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 157, G202 (2010).""]" +,,Hf(OiPr)4,O2,1995,[1995],"[""10.1016/j.jcrysgro.2009.10.028""]","[""Growth and phase stabilization of HfO2 thin films by ALD using novel precursors""]","[[""Niinist o, Jaakko"",""M antym aki, Miia"",""Kukli, Kaupo"",""Costelle, Leila"",""Puukilainen, Esa"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2010],"[""J. Cryst. Growth""]","[""J. Niinist€o, M. M€antym€aki, K. Kukli, L. Costelle, E. Puukilainen, M. Ritala, and M. Leskel€a, J. Cryst. Growth 312, 245 (2010).""]" +,,Hf(OtBu)4,H2O,274 and 1996,"[274,1996]","[""10.1063/1.3040311"",""10.1016/j.tsf.2009.02.115""]","[""The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge"",""Atomic layer deposition of an HfO2 thin film using Hf(O-iPr)(4)""]","[[""Sawkar-Mathur, Monica"",""Perng, Ya-Chuan"",""Lu, Jun"",""Blom, Hans-Olof"",""Bargar, John"",""Chang, Jane P.""],[""Kim, Jeong Chan"",""Heo, Jung Shik"",""Cho, Yong Seok"",""Moon, Sang Heup""]]","[2008,2009]","[""Appl. Phys. Lett."",""Thin Solid Films""]","[""M. Sawkar-Mathur, Y.-C. Perng, J. Lu, H.-O. Blom, J. Bargar, and J. P. Chang, Appl. Phys. Lett. 93, 233501 (2008)."",""J. C. Kim, J. S. Heo, Y. S. Cho, and S. H. 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Solid-State Lett."",""J. Vac. Sci. Technol., A""]","[""J. Liu, Y. Mao, E. Lan, D. R. Banatao, G. J. Forse, J. Lu, H.-O. Blom, T. O. Yeates, B. Dunn, and J. P. Chang, J. Am. Chem. Soc. 130, 16908 (2008)."",""H. S. Chang, S.-K. Baek, H. Park, H. Hwang, J. H. Oh, W. S. Shin, J. H. Yeo, K. H. Hwang, S. W. Nam, H. D. Lee, C. L. Song, D. W. Moon, and M.-H. Cho, Electrochem. Solid-State Lett. 7, F42 (2004)."",""Y. Senzaki, S. Park, H. Chatham, L. Bartholomew, and W. Nieveen, J. Vac. Sci. Technol. A 22, 1175 (2004).""]" +,,Hf(OtBu)4,O2,2000,[2000],"[""""]","[""Improvements in reliability and leakage current properties of HfO _2 gate dielectric films by in situ O _3 oxidation of Si substrate""]","[[""Park, H. B."",""Cho, M."",""Park, J."",""Lee, S. W."",""Park, T. J."",""Hwang, C. S.""]]",[2004],"[""Electrochem. Solid-State Lett.""]","[""H. B. Park, M. Cho, J. Park, S. W. Lee, T. J. Park, and C. S. Hwang, Electrochem. 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Ed. 47, 3592 (2008).""]" +,,Hf(OtBu)4,CH3COOH,908–911,"[908,909,910,911]","["""","""",""10.1039/b821555c"",""10.1116/1.3058743""]","[""Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition"",""Carboxylic acids as oxygen sources for the atomic layer deposition of high-kappa metal oxides"",""The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing"",""Effect of annealing and electrical properties of high-kappa thin films grown by atomic layer deposition using carboxylic acids as oxygen source""]","[[""Erwan Rauwel"",""Guylhaine Clavel"",""Marc-Georg Willinger"",""Protima Rauwel"",""Nicola Pinna""],[""Rauwel, E."",""Willinger, M. 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Phys., Part 1 47, 6196 (2008).""]" +,,Hf(NEtMe)4,H2O,"160, 247, 250, 253, 1601, 1842, 1849, 1912, 1967, 2023, and 2071–2095","[160,247,250,253,1601,1842,1849,1912,1967,2023,2071,2072,2073,2074,2075,2076,2077,2078,2079,2080,2081,2082,2083,2084,2085,2086,2087,2088,2089,2090,2091,2092,2093,2094,2095]","["""","""","""","""","""","""","""","""",""10.1063/1.3125510"",""10.1063/1.3243234"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1063/1.2996261"",""10.1063/1.3007978"",""DOI: 10.1016/j.tsf.2008.05.002"",""10.1016/j.apsusc.2009.03.055"",""10.1016/j.apsusc.2010.03.050"",""10.1116/1.3455187"",""10.1149/1.3353166"",""10.1016/j.tsf.2009.11.015"",""10.1166/jnn.2010.1983"",""10.1063/1.3506695""]","[""Effect of Hf Sources, Oxidizing Agents, and NH _3 / Ar Plasma on the Properties of HfAlO _x Films Prepared by Atomic Layer Deposition"",""Hydrogen barrier layer against silicon oxidation during atomic layer deposition of Al2O3 and HfO2"",""Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications"",""Hydrous-plasma treatment of Pt electrodes for atomic layer deposition of ultrathin high-k oxide films"",""Atomic layer deposition of ZrO _2 thin films using a new alkoxide precursor"",""Atomic layer deposition of lanthana thin films using high-purity lanthanum amino precursors"",""Lanthanum-oxide thin films deposited by plasma-enhanced atomic layer deposition"",""Trends of structural and electrical properties in atomic layer deposited HfO _2 films"",""Annealing behavior of atomic layer deposited HfO2 films studied by synchrotron x-ray reflectivity and grazing incidence small angle scattering"",""Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition"",""Effect of nitrogen incorporation in HfO2 films deposited by plasma-enhanced atomic layer deposition"",""Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water"",""Properties of HfO _2 thin films grown by ALD from hafnium tetrakis(ethylmethylamide) and water"",""Thermal and electrical properties of TaN electrode on HfO _2 gate dielectric"",""In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition"",""Dielectric relaxation of atomic-layer-deposited HfO2 thin films from 1 kHz to 5 GHz"",""Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As"",""Electrical properties of atomic layer deposited HfO2 gate dielectric film using D2O as oxidant for improved reliability"",""Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si"",""Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3)(2)(C2H5](4) and SiH[N(CH3)(2)](3) precursors via an H2O oxidant"",""Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN"",""Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors"",""TEM-based metrology for HfO2 layers and nanotubes formed in anodic aluminum oxide nanopore structures"",""Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates"",""GaAs interfacial self-cleaning by atomic layer deposition"",""Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate"",""Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric"",""Nitridation and oxynitridation of Si to control interfacial reaction with HfO2"",""Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack"",""Reflection absorption infrared spectroscopy during atomic layer deposition of HfO2 films from tetrakis(ethylmethylamido)hafnium and water"",""Time-resolved Fourier transform infrared spectroscopy of the gas phase during atomic layer deposition"",""Growth and Interface Evolution of HfO2 Films on GaAs(100) Surfaces"",""Atomic layer deposition of HfO2 on self-assembled monolayer-passivated Ge surfaces"",""Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors"",""Thickness dependence on crystalline structure and interfacial reactions in HfO[sub 2] films on InP (001) grown by atomic layer deposition""]","[[""T. Kawahara"",""K. Torii"",""R. Mitsuhashi"",""A. Muto"",""A. Horiuchi"",""H. Ito"",""H. Kitajima""],[""Frank, M. M."",""Wang, Y."",""Ho, M. T."",""Brewer, R. T."",""Moumen, N."",""Chabal, Y. J.""],[""Chiou, Y. K."",""Chang, C. H."",""Wang, C. C."",""Lee, K. Y."",""Wu, T. B."",""Kwo, R."",""Hong, M. H.""],[""Chang, C. H."",""Chiou, Y. K."",""Hsu, C. W."",""Wu, T. B.""],[""R. Matero"",""M. Ritala"",""M. Leskel a"",""A. C. Jones"",""P. A. Williams"",""J. F. Bickley"",""A. Steiner"",""T. J. Leedham"",""H. O. Davies""],[""Inman, R."",""Schuetz, S. A."",""Silvernail, C. M."",""Balaz, S."",""Dowben, P. A."",""Jursich, G."",""McAndrew, J."",""Belot, J. A.""],[""Lee, E. J."",""Ko, M. G."",""Kim, B. Y."",""Park, S. K."",""Kim, H. D."",""Park, J. W.""],[""G. Scarel"",""S. Spiga"",""C. Wiemer"",""G. Tallarida"",""S. Ferrari"",""M. Fanciulli""],[""Green, M. L."",""Allen, A. J."",""Jordan-Sweet, J. L."",""Ilavsky, J.""],[""Long, R. D."",""O'Connor, E."",""Newcomb, S. 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J."",""Ko, D. -H.""],[""Suri, Rahul"",""Lee, Bongmook"",""Lichtenwalner, Daniel J."",""Biswas, Nivedita"",""Misra, Veena""],[""Rajesh Katamreddy"",""Ronald Inman"",""Gregory Jursich"",""Axel Soulet"",""Christos Takoudis""],[""Lee, Younghwan"",""Park, Kibyung"",""Im, Kyung Taek"",""Lee, June Young"",""Im, Seongil"",""Lee, Jung Han"",""Yi, Yeonjin"",""Lim, Sangwoo""],[""Sperling, Brent A."",""Kimes, William A."",""Maslar, James E.""],[""Sperling, Brent A."",""Kimes, William A."",""Maslar, James E."",""Chu, Pamela M.""],[""Gougousi, Theodosia"",""Hackley, Justin C."",""Demaree, J. Derek"",""Lacis, John W.""],[""Park, Kibyung"",""Lee, Younghwan"",""Im, Kyung Taek"",""Lee, June Young"",""Lim, Sangwoo""],[""Nakashima, Yasuhiro"",""Ohno, Yutaka"",""Kishimoto, Shigeru"",""Okochi, Mina"",""Honda, Hiroyuki"",""Mizutani, Takashi""],[""Y. S. Kang"",""C. Y. Kim"",""M. -H. Cho"",""K. B. Chung"",""C. -H. An"",""H. Kim"",""H. J. Lee"",""C. S. Kim"",""T. G. 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Lett. 97, 172108 (2010).""]" +,,Hf(NEtMe)4,O3,"428, 616, 620, 829, 1521, 1610, 1611, 1938, 1994, 1998, and 2095–2108","[428,616,620,829,1521,1610,1611,1938,1994,1998,2095,2096,2097,2098,2099,2100,2101,2102,2103,2104,2105,2106,2107,2108]","[""10.1063/1.3467454"","""",""10.1109/LED.2010.2049978"",""10.1016/j.apsusc.2010.01.025"",""10.1016/j.tsf.2009.12.058"","""",""10.1016/j.mee.2008.03.020"","""","""","""",""10.1063/1.3506695"",""10.1149/1.3258664"","""","""","""","""","""","""","""","""","""","""","""",""10.1063/1.3284961""]","[""Characteristics of high-k Al[sub 2]O[sub 3] dielectric using ozone-based atomic layer deposition for dual-gated graphene devices"",""Atomically controlled preparation of silica on alumina"",""High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical"",""Temperature dependence of the sticking coefficient in atomic layer deposition"",""Electrical characterisation of HfYO MIM-structures deposited by ALD"",""Deposition and plasma measurements of Zr-oxide films with low impurity concentrations by remote PEALD"",""A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films"",""Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses"",""Growth of HfO2 by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors"",""Electrical and Physical Properties of HfO _2 Deposited via ALD Using Hf(OtBu) _4 and Ozone atop Al _2 O _3"",""Thickness dependence on crystalline structure and interfacial reactions in HfO[sub 2] films on InP (001) grown by atomic layer deposition"",""Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO2 Gate Dielectrics"",""AID of hafnium oxide thin film from tetrakis(ethylmethylamino)hafnium and ozone"",""Electrical properties of ultrathin HfO2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf(N(CH3)(C2H5))(4) and O-3"",""Ultrathin HfO2 films treated by xenon flash lamp annealing for use as transistor gate dielectric replacements"",""Impact of O-3 concentration on ultrathin HfO2 films deposited on HF-cleaned silicon using atomic layer deposition with Hf[N(CH3)(C2H5)](4)"",""Band gap and band offsets for ultrathin (HfO2)(x)(SiO2)(1-x) dielectric films on Si(100)"",""Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor"",""Chemical analysis of HfO2/Si(100) film systems exposed to NH3 thermal processing"",""Effects of annealing temperature on the electrical properties of ALD-grown Hf-silicate films having various Si contents"",""Characteristics of atomic layer deposition grown HfO2 films after exposure to plasma treatments"",""Electronic properties of ultrathin (HfO2)(x)(SiO2)(1-x) dielectrics on Si(100)"",""An evaluation of thermal stability of TiB2 metal gate on Hf silicate for p-channel metal oxide semiconductor application"",""Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy""]","[[""B. 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Keinonen, Science 288, 319 (2000).""]" +,HfxSiyOz,HfCl4,Si(OEt)4,653 and 2120,"[653,2120]","["""",""10.3938/jkps.56.905""]","[""Characterization of Zirconium Silicate Gate Dielectrics Deposited on Si (100) Using Zr(NEt _2 ) _4 and Si(O ^n Bu) _4"",""Characteristics of HfN Films Deposited by Using Remote Plasma-enhanced Atomic Layer Deposition""]","[[""J. Kim"",""K. Yong""],[""Jeong, Wooho"",""Ko, Youngbin"",""Bang, Seokhwan"",""Lee, Seungjun"",""Jeon, Hyeongtag""]]","[2004,2010]","[""Electrochem. Solid-State Lett."",""J. Korean Phys. Soc.""]","[""J. Kim and K. Yong, Electrochem. Solid-State Lett. 7, F35 (2004)."",""W. Jeong, Y. Ko, S. Bang, S. Lee, and H. Jeon, J. Korean Phys. Soc. 56, 905 (2010).""]" +,,HfCl4,Si(OnBu)4,2121 and 2122,"[2121,2122]","["""",""""]","[""Hafnium silicon oxide films prepared by atomic layer deposition"",""Atomic layer deposition of hafnium silicate films using hafnium tetrachloride and tetra-n-butyl orthosilicate""]","[[""Kaupo Kukli"",""Mikko Ritala"",""Markku Leskel a"",""Timo Sajavaara"",""Juhani Keinonen"",""David C. Gilmer"",""Philip J. Tobin""],[""W.-K. Kim"",""S.-W. Rhee"",""N.-I. Lee"",""J.-H. Lee"",""H.-K. Kang""]]","[2004,2004]","[""Mater. Sci. Eng., B"",""J. Vac. Sci. Technol., A""]","[""K. Kukli, M. Ritala, M. Leskel€a, T. Sajavaara, J. Keinonen, D. C. Gilmer, and P. J. Tobin, Mater. Sci. Eng., B 109, 2 (2004)."",""W.-K. Kim, S.-W. Rhee, N.-I. Lee, J.-H. Lee, and H.-K. Kang, J. Vac. Sci. Technol. A 22, 1285 (2004).""]" +,,HfI4,Si(OEt)4,653,[653],"[""""]","[""Characterization of Zirconium Silicate Gate Dielectrics Deposited on Si (100) Using Zr(NEt _2 ) _4 and Si(O ^n Bu) _4""]","[[""J. Kim"",""K. Yong""]]",[2004],"[""Electrochem. Solid-State Lett.""]","[""J. Kim and K. Yong, Electrochem. Solid-State Lett. 7, F35 (2004).""]" +,,Hf(OtBu)4,Si(NEtMe)4,2123,[2123],"[""""]","[""Atomic layer deposition analysis of HfSiO _4 by mass spectroscopy and XPS""]","[[""M. S. Kim"",""S. A. Rogers"",""Y. S. Kim"",""J. H. Lee"",""H. K. Kang""]]",[2004],"[""J. Korean Phys. Soc.""]","[""M. S. Kim, S. A. Rogers, Y. S. Kim, J. H. Lee, and H. K. Kang, J. Korean Phys. Soc. 45, 1317 (2004).""]" +,,Hf(NMe2)4,(tBuO)3SiOH,654,[654],"[""""]","[""Properties of Oxide Film Atomic Layer Deposited from Tetraethoxy Silane, Hafnium Halides, and Water""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""R. I. Hegde"",""D. C. Gilmer"",""P. J. Tobin""]]",[2004],"[""J. Electrochem. Soc.""]","[""K. Kukli, M. Ritala, M. Leskel€a, T. Sajavaara, J. Keinonen, R. I. Hegde, D. C. Gilmer, and P. J. Tobin, J. Electrochem. Soc. 151, F98 (2004).""]" +,,Hf(NEtMe)4,Si(OnBu)4,661,[661],"[""10.1149/1.3137053""]","[""Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol""]","[[""Liu, Jian"",""Lennard, William N."",""Goncharova, Lyudmila V."",""Landheer, Dolf"",""Wu, Xiaohua"",""Rushworth, Simon A."",""Jones, Anthony C.""]]",[2009],"[""J. Electrochem. Soc.""]","[""J. Liu, W. N. Lennard, L. V. Goncharova, D. Landheer, X. Wu, S. A. Rushworth, and A. C. Jones, J. Electrochem. 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Phys."",""J. Vac. Sci. Technol., B""]","[""R. G. Gordon, J. Becker, D. Hausmann, and S. Suh, Chem. Mater. 13, 2463 (2001)."",""J. Kim and K. Yong, J. Electrochem. Soc. 152, F153 (2005)."",""J. Kim and K. Yong, J. Electrochem. Soc. 152, F45 (2005)."",""J. Kim, S. Lee, and K. Yong, Jpn. J. Appl. Phys., Part 1 45, 7080 (2006)."",""J. Kim and K. J. Yong, J. Vac. Sci. Technol. B 24, 1147 (2006).""]" +,,Hf(NEt2)4,Si(OtPe)3OH,660,[660],"[""""]","[""Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor deposition""]","[[""Kim, J."",""Yong, K.""]]",[2006],"[""J. Appl. Phys.""]","[""J. Kim and K. Yong, J. Appl. Phys. 100, 044106 (2006).""]" +,,Hf(NO3)4,(tBuO)3SiOH,2116,[2116],"[""""]","[""Electrical properties of HfO _2 deposited via atomic layer deposition using Hf(NO _3 ) _3 and H _2 O""]","[[""Conley, J. F., Jr."",""Y. Ono"",""R. Solanki"",""G. Stecker"",""W. Zhuang""]]",[2003],"[""Appl. Phys. Lett.""]","[""J. F. Conley, Y. Ono, R. Solanki, G. Stecker, and W. Zhuang, Appl. Phys. Lett. 82, 3508 (2003).""]" +,HfxTiyOz,HfCl4,Ti(OiPr)4,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +73,Tantalum,,,,[],[],[],[],[],[],[] +,Ta,TaCl5,H2⚡,685 and 2124,"[685,2124]","[""10.1016/j.apsusc.2009.04.184"",""""]","[""Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy"",""Highly conformal hafnium silicate film growth by atomic-layer chemical vapor deposition using a new combination of precursors: Hf(OC(CH3)(3))(4) and Si(N(CH3)(C2H5))(4)""]","[[""Hardy, A."",""Adelmann, C."",""Van Elshocht, S."",""Van den Rul, H."",""Van Bael, M. K."",""De Gendt, S."",""D'Olieslaeger, M."",""Heyns, M."",""Kittl, J. A."",""Mullens, J.""],[""Kim, J."",""Yong, K.""]]","[2009,2006]","[""Appl. Surf. Sci."",""Jpn. J. Appl. Phys.""]","[""A. Hardy, C. Adelmann, S. Van Elshocht, H. Van den Rul, M. K. Van Bael, S. De Gendt, M. D’Olieslaeger, M. Heyns, J. A. Kittl, and J. Mullens, Appl. Surf. Sci. 255, 7812 (2009)."",""J. Kim and K. Yong, Jpn. J. Appl. Phys., Part 1 45, 5174 (2006).""]" +,,TaF5,H2⚡,2125–2127,"[2125,2126,2127]","["""","""",""10.1149/1.3223989""]","[""Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties"",""A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films"",""Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier""]","[[""H. Kim"",""S. M. Rossnagel""],[""Kwon, J. D."",""Park, J. S."",""Lee, H. C."",""Kang, S. W.""],[""Kwon, Jung-Dae"",""Jeong, Seong-Jun"",""Kang, Jae-Wook"",""Kim, Do-Geun"",""Kim, Jong-Kuk"",""Rha, Jong-Joo"",""Nam, Kee-Seok"",""Kwon, Se-Hun""]]","[2003,2006,2009]","[""Thin Solid Films"",""Electrochem. Solid-State Lett."",""J. Electrochem. Soc.""]","[""H. Kim and S. M. Rossnagel, Thin Solid Films 441, 311 (2003)."",""J. D. Kwon, J. S. Park, H. C. Lee, and S. W. Kang, Electrochem. Solid- State Lett. 9, G282 (2006)."",""J.-D. Kwon, S.-J. Jeong, J.-W. Kang, D.-G. Kim, J.-K. Kim, J.-J. Rha, K.-S. Nam, and S.-H. Kwon, J. Electrochem. Soc. 156, H832 (2009).""]" +,,TaF5,Si2H6 p,2128,[2128],"[""10.1143/JJAP.48.025504""]","[""Comparison of Tantalum Nitride Films for Different NH3/H-2/Ar Reactant States in Two-Step Atomic Layer Deposition""]","[[""Kwon, Jung-Dae"",""Yun, Jungheum"",""Kang, Sang-Won""]]",[2009],"[""Jpn. J. Appl. Phys.""]","[""J.-D. Kwon, J. Yun, and S.-W. Kang, Jpn. J. Appl. Phys., Part 1 48, 025504 (2009).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_020_table_015/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_020_table_015/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..0016901dd717add009a923ae8a2bfbbd4427d248 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_020_table_015/gold.csv @@ -0,0 +1,56 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Ta2O5,TaCl5,H2O,"75, 77, 78, 81, 90, 92, 128, 392, 1291, 1541, 1627, 1883, and 2129–2134","[75,77,78,81,90,92,128,392,1291,1541,1627,1883,2129,2130,2131,2132,2133,2134]","["""","""","""","""","""","""","""",""DOI: 10.1016/j.ssc.2010.06.023"","""","""","""","""","""","""","""","""","""",""""]","[""Fabrication and dielectric properties of multilayer Ta _2 O _5 /Al _2 O _3 nanolaminates"","""","""",""LAYERED TANTALUM-ALUMINUM OXIDE-FILMS DEPOSITED BY ATOMIC LAYER EPITAXY"",""Multilayered tantalum-aluminum oxide films grown by atomic layer deposition"",""Electron probe microanalysis of HfO2 thin films on conductive and insulating substrates"",""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition"",""Structure of a zinc sulfide film prepared by molecular stratification on the surface of disperse silica"",""Properties of (Nb1-xTax)(z)O-5 solid solutions and (Nb1-xTax)(2)O-5-ZrO2 nanolaminates grown by atomic layer epitaxy"",""Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition"",""[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films"",""Surface science investigations of atomic layer deposition half-reactions using TaF _5 and Si _2 H _6"",""DEPOSITION AND ETCHING OF TANTALUM OXIDE-FILMS IN ATOMIC LAYER EPITAXY PROCESS"",""PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION"",""Reactivities of TaCl _5 and H _2 O as precursors for atomic layer deposition"",""Mechanism of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl _5 and H _2 O"",""Influence of atomic layer deposition parameters on the phase content of Ta _2 O _5 films""]","[["". 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A."",""Lebedinskii, Y."",""Zenkevich, A."",""Pavia, G.""],[""A. M. Lemonds"",""J. M. White"",""J. G. Ekerdt""],[""J. Aarik"",""A. Aidla"",""K. Kukli"",""T. Uustare""],[""K. Kukli"",""J. Aarik"",""A. Aidla"",""O. Kohan"",""T. Uustare"",""V. Sammelselg""],[""H. Siimon"",""J. Aarik""],[""J. Aarik"",""K. Kukli"",""A. Aidla"",""L. Pung""],[""K. Kukli"",""M. Ritala"",""R. Matero"",""M. Leskel a""]]","[2003,null,null,1993,1999,2006,2000,2010,1987,1997,2007,2007,2003,1994,1995,1995,1996,2000]","[""Neorg. Mater."","""","""",""Thin Solid Films"",""J. Korean Phys. Soc."",""Microchim. Acta"",""Thin Solid Films"",""Solid State Commun."",""Neorg. Mater."",""Nanostruct. Mater."",""Appl. Phys. Lett."",""Z. Anorg. Allg. Chem."",""Surf. Sci."",""J. Cryst. Growth"",""Thin Solid Films"",""J. Phys. IV France"",""Appl. Surf. Sci."",""J. Cryst. Growth""]","[""K. Ezhovskii and A. I. Klusevich, Neorg. Mater. 39, 1230 (2003) [Inorg. Mater. 39, 1062 (2003)]."",""T. S. Suntola, A. J. Pakkala, and S. G. 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Growth 212, 459 (2000).""]" +,,TaCl5,Ta(OEt)5,103 and 2135,"[103,2135]","["""",""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Nanolaminated Ta2O5-Al2O3 insulator effect on luminescent and electrical properties of thin-film electroluminescent devices""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""Kim, Y. S."",""Yun, S. J.""]]","[2000,2005]","[""Science"",""Jpn. J. Appl. Phys.""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000)."",""Y. S. Kim and S. J. Yun, Jpn. J. Appl. Phys., Part 1 44, 4848 (2005).""]" +,,TaF5,H2O,2136,[2136],"[""""]","[""Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a""]]",[2000],"[""Chem. Mater.""]","[""K. Kukli, M. Ritala, and M. Leskel€a, Chem. Mater. 12, 1914 (2000).""]" +,,TaI5,H2O2,2137,[2137],"[""""]","[""Atomic layer deposition of hexagonal-phase Ta2O5 using TaF5 and H2O""]","[[""Hill, C. W."",""Derderian, G. J."",""Sandhu, G.""]]",[2005],"[""J. Electrochem. Soc.""]","[""C. W. Hill, G. J. Derderian, and G. Sandhu, J. Electrochem. Soc. 152, G386 (2005).""]" +,,TaI5,O2,2138,[2138],"[""""]","[""Atomic layer deposition of tantalum oxide thin films from iodide precursor""]","[[""K. Kukli"",""J. Aarik"",""A. Aidla"",""K. Forsgren"",""J. Sundqvist"",""A. H rsta"",""T. Uustare"",""H. M andar"",""A. A. Kiisler""]]",[2001],"[""Chem. Mater.""]","[""K. Kukli, J. Aarik, A. Aidla, K. Forsgren, J. Sundqvist, A. Ha˚rsta, T. Uustare, H. M€andar, and A. A. Kiisler, Chem. Mater. 13, 122 (2001).""]" +,,Ta(OEt)5,H2O,"85, 91, 122, 123, 128, 201, 803, 833, 842, 1539, 1563, 1627, 1885, and 2139–2146","[85,91,122,123,128,201,803,833,842,1539,1563,1627,1885,2139,2140,2141,2142,2143,2144,2145,2146]","["""","""","""","""","""","""",""10.1088/0957-4484/21/3/035301"","""","""","""","""","""","""","""","""","""","""","""","""",""10.1002/cvde.200906770"",""10.1149/1.3086781""]","[""Properties of Ta _2 O _3 -based dielectric nanolaminates deposited by atomic layer epitaxy"",""Development of dielectric properties of niobium oxide, tantalum oxide, and aluminum oxide based nanolayered materials"",""In situ characterization of atomic layer deposition processes by a mass spectrometer"",""Atomic layer deposited thin films for corrosion protection"",""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency micro electromechanical system application"",""Ta2O5- and TiO2-based nanostructures made by atomic layer deposition"",""Diffusion barrier properties of atomic layer deposited ultrathin Ta2O5 and TiO2 films"",""In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal ( Ti, Ta, and Nb ) Ethoxides and Water"","""",""Physical and electrical properties of hafnium-zirconium-oxide films grown by atomic layer deposition"",""Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition"",""Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy"",""Atomic layer deposition of Ta _2 O _3 using the Ta I _5 and O _2 precursor combination"",""ATOMIC LAYER EPITAXY GROWTH OF TANTALUM OXIDE THIN-FILMS FROM Ta(OC _2 H _5 ) _5 AND H _2 O"",""In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC _2 H _5 ) _5 and H _2 O"",""Effect of rapid thermal annealing on the structure and the electrical properties of atomic-layer-deposited Ta _2 O _5 films"",""Preparation of tantalum oxide thin films by photo-assisted atomic layer deposition"",""Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition"",""Atomic Layer Deposition of Ta2O5/Polyimide Nanolaminates"",""ESD and ALD Depositions of Ta2O5 Thin Films Investigated as Barriers to Copper Diffusion for Advanced Metallization""]","[[""K. 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A 26, 472 (2008).""]" +,,Ta(NtBu)(tBu2pz)3,O3,2157,[2157],"[""""]","[""Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors""]","[[""D. M. Hausmann"",""P. de Rouffignac"",""A. Smith"",""R. Gordon"",""D. Monsma""]]",[2003],"[""Thin Solid Films""]","[""D. M. Hausmann, P. de Rouffignac, A. Smith, R. Gordon, and D. Monsma, Thin Solid Films 443, 1 (2003).""]" +,,Ta(NtBu)\-(iPrAMD)2(NMe2),H2O,2158,[2158],"[""""]","[""A pyrazolate-based metalorganic tantalum precursor that exhibits high thermal stability and its use in the atomic layer deposition of Ta2O5""]","[[""Dezelah IV, C. L."",""Wiedmann, M. K."",""Mizohata, K."",""Baird, R. J."",""Niinist o, L."",""Winter, C. H.""]]",[2007],"[""J. Am. Chem. Soc.""]","[""C. L. Dezelah IV, M. K. Wiedmann, K. Mizohata, R. J. Baird, L. Niinist€o, and C. H. Winter, J. Am. Chem. 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Scharnberg, W. C. Kim, P. S. Ho, and R. Laxman, J. Vac. Sci. Technol. A 23, 1107 (2005).""]" +,,TaCl5,N2⚡,2164–2166,"[2164,2165,2166]","["""","""",""""]","[""Tert-butylamine and allylamine as reductive nitrogen sources in atomic layer deposition of TaN thin films"",""Growth of cubic- TaN thin films by plasma-enhanced atomic layer deposition"",""Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition""]","[[""P. Al en"",""M. Juppo"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""H. Kim"",""A. J. Kellock"",""S. M. Rossnagel""],[""H. Kim"",""C. Cabral, Jr."",""C. Lavoie"",""S. M. Rossnagel""]]","[2002,2002,2002]","[""J. Mater. Res."",""J. Appl. Phys."",""J. Vac. Sci. Technol., B""]","[""P. Al\u0003en, M. Juppo, M. Ritala, M. Leskel€a, T. Sajavaara, and J. Keinonen, J. Mater. Res. 17, 107 (2002)."",""H. Kim, A. J. Kellock, and S. M. Rossnagel, J. Appl. Phys. 92, 7080 (2002)."",""H. Kim, J. C. Cabral, C. 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Eng. 86, 2241 (2009).""]" +,,TaCl5 · SEt2,NH3 + AlMe3,2169,[2169],"[""10.1149/1.3267881""]","[""Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper""]","[[""Chang, Chih-Chieh"",""Pan, Fu-Ming"",""Chen, Ching-Wen""]]",[2010],"[""J. Electrochem. Soc.""]","[""C.-C. Chang, F.-M. Pan, and C.-W. Chen, J. Electrochem. Soc. 157, G62 (2010).""]" +,,TaBr5,tBuNH2,2163,[2163],"[""""]","[""Effects of surface chemistry on ALD Ta3N5 barrier formation on low-k dielectrics""]","[[""Liu, J."",""Bao, J."",""Scharnberg, M."",""Kim, W. C."",""Ho, P. S."",""Laxman, R.""]]",[2005],"[""J. Vac. Sci. Technol., A""]","[""J. Liu, J. Bao, M. Scharnberg, W. C. Kim, P. S. Ho, and R. Laxman, J. Vac. Sci. Technol. A 23, 1107 (2005).""]" +,,TaF5,H2+N2⚡,2170,[2170],"[""10.1149/1.3353230""]","[""Atomic Layer Deposition of Ta-N-Based Thin Films Using a Tantalum Source""]","[[""Schmidt, D."",""Knaut, M."",""Hossbach, C."",""Albert, M."",""Dussarrat, C."",""Hintze, B."",""Bartha, J. W.""]]",[2010],"[""J. Electrochem. Soc.""]","[""D. Schmidt, M. Knaut, C. Hossbach, M. Albert, C. Dussarrat, B. Hintze, and J. W. Bartha, J. Electrochem. Soc. 157, H638 (2010).""]" +,,TaF5,H2⚡+NH3,2126 and 2127,"[2126,2127]","["""",""10.1149/1.3223989""]","[""A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films"",""Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier""]","[[""Kwon, J. D."",""Park, J. S."",""Lee, H. C."",""Kang, S. W.""],[""Kwon, Jung-Dae"",""Jeong, Seong-Jun"",""Kang, Jae-Wook"",""Kim, Do-Geun"",""Kim, Jong-Kuk"",""Rha, Jong-Joo"",""Nam, Kee-Seok"",""Kwon, Se-Hun""]]","[2006,2009]","[""Electrochem. Solid-State Lett."",""J. 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Soc. 156, H832 (2009).""]" +,,Ta(NMe2)5,NH3,2152 and 2171–2180,"[2152,2171,2172,2173,2174,2175,2176,2177,2178,2179,2180]","["""","""","""","""","""","""","""","""","""","""",""""]","[""Tantalum(V) nitride inverse opals as photonic structures for visible wavelengths"",""Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N-2/H-2/Ar plasma"",""Structures of ultra-thin atomic-layer-deposited TaN _x films"",""Continuity and morphology of TaN barriers deposited by Atomic Layer Deposition and comparison with physical vapor deposition"",""Interface characterization of nanoscale laminate structures on dense dielectric substrates by X-ray reflectivity"",""Characterization of atomic layer deposited nanoscale structure on dense dielectric substrates by X-ray reflectivity"",""A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates"",""Ta penetration into template-type porous low-k material during atomic layer deposition of TaN"",""Etch-byproduct pore sealing for atomic-layer-deposited-TaN deposition on porous low-k film"",""Effects of thermal treatment on structures of Cu/atomic-layer-deposited TaN films/Si stacks"",""FTIR and ellipsometry characterization of ultra-thin ALD TaN films""]","[[""Rugge, A."",""Park, J. 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Travaly, J. Schuhmacher, M. R. Baklanov, S. Giangrandi, O. Richard, B. Brijs, M. Van Hove, K. Maex, T. Abell, K. R. F. Somers, M. F. A. Hendrickx, L. G. Vanquickenborne, A. Ceulemans, and A. M. Jonas, J. Appl. Phys. 98, 083515 (2005)."",""A. Furuya, N. Ohtsuka, K. Misawa, M. Shimada, and S. Ogawa, J. Appl. Phys. 98, 094902 (2005)."",""A. Furuya, E. Soda, M. Shimada, and S. Ogawa, Jpn. J. Appl. Phys., Part 1 44, 7430 (2005)."",""Y. Y. Wu and M. Eizenberg, Thin Solid Films 514, 33 (2006)."",""Y. Y. Wu and M. Eizenberg, Mater. Chem. Phys. 101, 269 (2007).""]" +,,Ta(NMe2)5,NH3⚡,2181,[2181],"[""""]","[""Comparison of electromigration in cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners""]","[[""Hu, C. K."",""Gignac, L."",""Liniger, E."",""Grunow, S."",""Demarest, J. J."",""Redder, B."",""Simon, A."",""Liew, S. L.""]]",[2007],"[""J. Electrochem. Soc.""]","[""C. K. Hu, L. Gignac, E. Liniger, S. Grunow, J. J. Demarest, B. Redder, A. Simon, and S. L. Liew, J. Electrochem. Soc. 154, H755 (2007).""]" +,,Ta(NMe2)5,H2⚡,"964, 2152, 2182, and 2183","[964,2152,2182,2183]","[""10.1149/1.2988651"","""",""10.1016/j.mee.2008.05.026"",""""]","[""Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications"",""Tantalum(V) nitride inverse opals as photonic structures for visible wavelengths"",""Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma"",""Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition""]","[[""Knoops, H. C. M."",""Baggetto, L."",""Langereis, E."",""van de Sanden, M. C. M."",""Klootwijk, J. H."",""Roozeboom, F."",""Niessen, R. A. H."",""Notten, P. H. L."",""Kessels, W. M. M.""],[""Rugge, A."",""Park, J. S."",""Gordon, R. G."",""Tolbert, S. H.""],[""Xie, Qi"",""Musschoot, Jan"",""Detavernier, Christophe"",""Deduytsche, Davy"",""Van Meirhaeghe, Roland L."",""Van den Berghe, Sven"",""Jiang, Yu-Long"",""Ru, Guo-Ping"",""Li, Bing-Zong"",""Qu, Xin-Ping""],[""Kim, H."",""Detavenier, C."",""van der Straten, O."",""Rossnagel, S. M."",""Kellock, A. J."",""Park, D. G.""]]","[2008,2005,2008,2005]","[""J. Electrochem. Soc."",""J. Phys. Chem. B"",""Microelectron. Eng."",""J. Appl. Phys.""]","[""H. C. M. Knoops, L. Baggetto, E. Langereis, M. C. M. van de Sanden, J. H. Klootwijk, F. Roozeboom, R. A. H. Niessen, P. H. L. Notten, and W. M. M. Kessels, J. Electrochem. Soc. 155, G287 (2008)."",""A. Rugge, J. S. Park, R. G. Gordon, and S. H. Tolbert, J. Phys. Chem. B 109, 3764 (2005)."",""Q. Xie, J. Musschoot, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, S. Van den Berghe, Y.-L. Jiang, G.-P. Ru, B.-Z. Li, and X.-P. Qu, Microelectron. Eng. 85, 2059 (2008)."",""H. Kim, C. Detavenier, O. van der Straten, S. M. Rossnagel, A. J. Kellock, and D. G. Park, J. Appl. Phys. 98, 014308 (2005).""]" +,,Ta(NMe2)5,N2⚡,2181–2183,"[2181,2182,2183]","["""",""10.1016/j.mee.2008.05.026"",""""]","[""Comparison of electromigration in cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners"",""Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma"",""Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition""]","[[""Hu, C. K."",""Gignac, L."",""Liniger, E."",""Grunow, S."",""Demarest, J. J."",""Redder, B."",""Simon, A."",""Liew, S. L.""],[""Xie, Qi"",""Musschoot, Jan"",""Detavernier, Christophe"",""Deduytsche, Davy"",""Van Meirhaeghe, Roland L."",""Van den Berghe, Sven"",""Jiang, Yu-Long"",""Ru, Guo-Ping"",""Li, Bing-Zong"",""Qu, Xin-Ping""],[""Kim, H."",""Detavenier, C."",""van der Straten, O."",""Rossnagel, S. M."",""Kellock, A. J."",""Park, D. G.""]]","[2007,2008,2005]","[""J. Electrochem. Soc."",""Microelectron. Eng."",""J. Appl. Phys.""]","[""C. K. Hu, L. Gignac, E. Liniger, S. Grunow, J. J. Demarest, B. Redder, A. Simon, and S. L. Liew, J. Electrochem. Soc. 154, H755 (2007)."",""Q. Xie, J. Musschoot, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, S. Van den Berghe, Y.-L. Jiang, G.-P. Ru, B.-Z. Li, and X.-P. Qu, Microelectron. Eng. 85, 2059 (2008)."",""H. Kim, C. Detavenier, O. van der Straten, S. M. Rossnagel, A. J. Kellock, and D. G. Park, J. Appl. Phys. 98, 014308 (2005).""]" +,,Ta(NMe2)5,"N2, H2⚡",453,[453],"[""""]","[""Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric""]","[[""Yun, Hyeong-Seon"",""Kim, Kwang-Ho""]]",[2009],"[""J. Korean Phys. Soc.""]","[""H.-S. Yun and K.-H. Kim, J. Korean Phys. Soc. 54, 707 (2009).""]" +,,Ta(NEtMe)5,NH3,2184,[2184],"[""""]","[""Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition""]","[[""Langereis, E."",""Knoops, H. C. M."",""Mackus, A. J. M."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2007],"[""J. Appl. Phys.""]","[""E. Langereis, H. C. M. Knoops, A. J. M. Mackus, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 102, 083517 (2007).""]" +,,Ta(NiPr)(NEtMe)3,H2+N2⚡,2185,[2185],"[""""]","[""Thermal and electrical properties of 5-nm-thick TaN film prepared by atomic layer deposition using a pentakis(ethylmethylamino)tantalum precursor for copper metallization""]","[[""Bae, N. J."",""Na, K. I."",""Cho, H. I."",""Park, K. Y."",""Boo, E."",""Bae, J. H."",""Lee, J. H.""]]",[2006],"[""Jpn. J. Appl. Phys.""]","[""N. J. Bae, K. I. Na, H. I. Cho, K. Y. Park, E. Boo, J. H. Bae, and J. H. Lee, Jpn. J. Appl. Phys., Part 1 45, 9072 (2006).""]" +,,Ta(NtBu)(NEt2)3,NH3,2186–2190,"[2186,2187,2188,2189,2190]","["""","""","""","""",""""]","[""High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications"",""Barrier characteristics of TaN films deposited by using the remote plasma enhanced atomic layer deposition method"",""Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes"",""Tantalum nitride atomic layer deposition using (tert-butylimido) tris(diethylamido) tantalum and hydrazine"",""Top injection reactor tool with in situ spectroscopic ellipsometry for growth and characterization of ALD thin films""]","[[""Sreenivasan, R."",""Sugawara, T."",""Saraswat, K. C."",""McIntyre, P. C.""],[""J. Y. Kim"",""K. W. Lee"",""H. O. Park"",""Y. D. Kim"",""H. Jeon"",""Y. Kim""],[""O. van der Straten"",""Y. Zhu"",""K. Dunn"",""E. T. Eisenbraun"",""A. E. Kaloyeros""],[""Burton, B. B."",""Lavoie, A. R."",""George, S. M.""],[""Schmidt, D."",""Strehle, S."",""Albert, M."",""Hentsch, W."",""Bartha, J. W.""]]","[2007,2004,2004,2008,2008]","[""Appl. Phys. Lett."",""J. Korean Phys. Soc."",""J. Mater. Res."",""J. Electrochem. Soc."",""Microelectron. Eng.""]","[""R. Sreenivasan, T. Sugawara, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. 90, 102101 (2007)."",""J. Y. Kim, K. W. Lee, H. O. Park, Y. D. Kim, H. Jeon, and Y. Kim, J. Korean Phys. Soc. 45, 1069 (2004)."",""O. van der Straten, Y. Zhu, K. Dunn, E. T. Eisenbraun, and A. E. Kaloyeros, J. Mater. Res. 19, 447 (2004)."",""B. B. Burton, A. R. Lavoie, and S. M. George, J. Electrochem. Soc. 155, D508 (2008)."",""D. Schmidt, S. Strehle, M. Albert, W. Hentsch, and J. W. Bartha, Microelectron. Eng. 85, 527 (2008).""]" +,,Ta(NtBu)(NEt2)3,N2H4,2188,[2188],"[""""]","[""Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes""]","[[""O. van der Straten"",""Y. Zhu"",""K. Dunn"",""E. T. Eisenbraun"",""A. E. Kaloyeros""]]",[2004],"[""J. Mater. Res.""]","[""O. van der Straten, Y. Zhu, K. Dunn, E. T. Eisenbraun, and A. E. Kaloyeros, J. Mater. Res. 19, 447 (2004).""]" +,,Ta(NtBu)(NEt2)3,H2⚡,1669 and 2191–2193,"[1669,2191,2192,2193]","[""10.1016/j.tsf.2009.01.117"",""DOI: 10.1016/j.tsf.2010.07.115"","""",""""]","[""Interface roughness effect between gate oxide and metal gate on dielectric property"",""Atomic layer deposition of tantalum nitride based thin films from cyclopentadienyl type precursor"",""Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent"",""Plasma-enhanced atomic layer deposition of Ta-N thin films""]","[[""Son, J. Y."",""Maeng, W. J."",""Kim, Woo-Hee"",""Shin, Y. H."",""Kim, Hyungjun""],[""A. Correia Anacleto"",""A. Zauner"",""D. Cany-Canian"",""J. Gatineau"",""M.-C. Hugon""],[""J.-S. Park"",""M.-J. Lee"",""C.-S. Lee"",""S.-W. Kang""],[""J.-S. Park"",""H.-S. Park"",""S.-W. Kang""]]","[2009,2010,2001,2002]","[""Thin Solid Films"",""Thin Solid Films"",""Electrochem. Solid-State Lett."",""J. Electrochem. Soc.""]","[""J. Y. Son, W. J. Maeng, W.-H. Kim, Y. H. Shin, and H. Kim, Thin Solid Films 517, 3892 (2009)."",""A. C. Anacleto, A. Zauner, D. Cany-Canian, J. Gatineau, and M.-C. Hugon, Thin Solid Films 519, 367 (2010)."",""J.-S. Park, M.-J. Lee, C.-S. Lee, and S.-W. Kang, Electrochem. Solid- State Lett. 4, C17 (2001)."",""J.-S. Park, H.-S. Park, and S.-W. Kang, J. Electrochem. Soc. 149, C28 (2002).""]" +,,Ta(NtBu)(NEt2)3,NH3⚡,1668 and 2186,"[1668,2186]","[""10.1016/j.tsf.2009.03.001"",""""]","[""Ru thin film grown on TaN by plasma enhanced atomic layer deposition"",""High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications""]","[[""Xie, Qi"",""Jiang, Yu-Long"",""Musschoot, Jan"",""Deduytsche, Davy"",""Detavernier, Christophe"",""Van Meirhaeghe, Roland L."",""Van den Berghe, Sven"",""Ru, Guo-Ping"",""Li, Bing-Zong"",""Qu, Xin-Ping""],[""Sreenivasan, R."",""Sugawara, T."",""Saraswat, K. C."",""McIntyre, P. C.""]]","[2009,2007]","[""Thin Solid Films"",""Appl. Phys. Lett.""]","[""Q. Xie, Y.-L. Jiang, J. Musschoot, D. Deduytsche, C. Detavernier, R. L. Van Meirhaeghe, S. Van den Berghe, G.-P. Ru, B.-Z. Li, and X.-P. Qu, Thin Solid Films 517, 4689 (2009)."",""R. Sreenivasan, T. Sugawara, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. 90, 102101 (2007).""]" +,,TaCp(NtBu)(NEt2)2,NH3,2190,[2190],"[""""]","[""Top injection reactor tool with in situ spectroscopic ellipsometry for growth and characterization of ALD thin films""]","[[""Schmidt, D."",""Strehle, S."",""Albert, M."",""Hentsch, W."",""Bartha, J. W.""]]",[2008],"[""Microelectron. Eng.""]","[""D. Schmidt, S. Strehle, M. Albert, W. Hentsch, and J. W. Bartha, Microelectron. Eng. 85, 527 (2008).""]" +,,Ta(NtAm)(NMe2)3,H2⚡,1671,[1671],"[""10.1016/j.mee.2009.11.163""]","[""Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition""]","[[""Choi, Bum Ho"",""Lim, Yong Hwan"",""Lee, Jong Ho"",""Kim, Young Baek"",""Lee, Ho-Nyun"",""Lee, Hong Kee""]]",[2010],"[""Microelectron. Eng.""]","[""B. H. Choi, Y. H. Lim, J. H. Lee, Y. B. Kim, H.-N. Lee, and H. K. Lee, Microelectron. Eng. 87, 1391 (2010).""]" +,TaNxCy,Ta(NtBu)(NEt2)3,H2,2194,[2194],"[""10.1116/1.3147215""]","[""Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals""]","[[""Rayner, Jr., G. B."",""George, S. M.""]]",[2009],"[""J. Vac. Sci. Technol., A""]","[""G. B. Rayner, Jr. and S. M. George, J. Vac. Sci. Technol. A 27, 716 (2009).""]" +,,Ta(NtBu)(NEt2)3,H2⚡,2194–2196,"[2194,2195,2196]","[""10.1116/1.3147215"",""10.1149/1.3377003"",""10.1002/cvde.200806702""]","[""Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals"",""Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum"",""Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimido-tris (diethylamido)-tantalum (TBTDET), and its Effect on Material Properties""]","[[""Rayner, Jr., G. B."",""George, S. M.""],[""Kim, Suk-Hoon"",""Song, Moon-Kyun"",""Rhee, Shi-Woo""],[""Song, Moon-Kyun"",""Rhee, Shi-Woo""]]","[2009,2010,2008]","[""J. Vac. Sci. Technol., A"",""J. Electrochem. Soc."",""Chem. Vap. Deposition""]","[""G. B. Rayner, Jr. and S. M. George, J. Vac. Sci. Technol. A 27, 716 (2009)."",""S.-H. Kim, M.-K. Song, and S.-W. Rhee, J. Electrochem. Soc. 157, H652 (2010)."",""M.-K. Song and S.-W. Rhee, Chem. Vap. Deposition 14, 334 (2008).""]" +,,Ta(NtBu)(NEt2)3,H2-CH4⚡,2197,[2197],"[""10.1149/1.3205457""]","[""Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films""]","[[""Hossbach, C."",""Teichert, S."",""Thomas, J."",""Wilde, L."",""Wojcik, H."",""Schmidt, D."",""Adolphi, B."",""Bertram, M."",""Muehle, U."",""Albert, M."",""Menzel, S."",""Hintze, B."",""Bartha, J. W.""]]",[2009],"[""J. Electrochem. Soc.""]","[""C. Hossbach, S. Teichert, J. Thomas, L. Wilde, H. Wojcik, D. Schmidt, B. Adolphi, M. Bertram, U. Muehle, M. Albert, S. Menzel, B. Hintze, and J. W. Bartha, J. Electrochem. Soc. 156, H852 (2009).""]" +,,Ta(NtBu)(NEt2)3,NH3,2198,[2198],"[""10.1149/1.3490413""]","[""Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas""]","[[""Cho, Gi-Hee"",""Rhee, Shi-Woo""]]",[2010],"[""Electrochem. Solid-State Lett.""]","[""G.-H. Cho and S.-W. Rhee, Electrochem. Solid-State Lett. 13, H426 (2010).""]" +,,Ta(NtBu)(NEt2)3,NH3⚡,2198,[2198],"[""10.1149/1.3490413""]","[""Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas""]","[[""Cho, Gi-Hee"",""Rhee, Shi-Woo""]]",[2010],"[""Electrochem. Solid-State Lett.""]","[""G.-H. Cho and S.-W. Rhee, Electrochem. Solid-State Lett. 13, H426 (2010).""]" +,,Ta(NtAm)[(NMe2)]3,H2⚡,2199,[2199],"[""10.1149/1.2967333""]","[""Phase formation in the tantalum carbonitride film deposited with atomic layer deposition using ammonia""]","[[""Song, Moon-Kyun"",""Rhee, Shi-Woo""]]",[2008],"[""J. Electrochem. Soc.""]","[""M.-K. Song and S.-W. Rhee, J. Electrochem. Soc. 155, H823 (2008).""]" +,TaSix,TaF5,Si2H6,2200,[2200],"[""""]","[""Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H-2 plasma""]","[[""Park, T. J."",""Kim, J. H."",""Jang, J. H."",""Na, K. D."",""Hwang, C. S."",""Kim, J. H."",""Kim, G. M."",""Choi, J. H."",""Choi, K. J."",""Jeong, J. H.""]]",[2007],"[""Appl. Phys. Lett.""]","[""T. J. Park, J. H. Kim, J. H. Jang, K. D. Na, C. S. Hwang, J. H. Kim, G. M. Kim, J. H. Choi, K. J. Choi, and J. H. Jeong, Appl. Phys. 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Fabreguette, Z. A. Sechrist, and S. M. George, Science 303, 989 (2004)."",""R. K. Grubbs, N. J. Steinmetz, and S. M. George, J. Vac. Sci. Technol. B 22, 1811 (2004)."",""F. H. Fabreguette, Z. A. Sechrist, J. W. Elam, and S. M. George, Thin Solid Films 488, 103 (2005)."",""N. N. Naguib, J. W. Elam, J. Birrell, J. Wang, D. S. Grierson, B. Kabius, J. M. Hiller, A. V. Sumant, R. W. Carpick, O. Auciello, and J. A. Carlisle, Chem. Phys. Lett. 430, 345 (2006)."",""C. Y. Kim, J. W. Elam, M. J. Pellin, D. K. Goswami, S. T. Christensen, M. C. Hersam, P. C. Stair, and M. J. Bedzyk, J. Phys. Chem. B 110, 12616 (2006)."",""J. W. Elam, J. A. Libera, M. J. Pellin, A. V. Zinovev, J. P. Greene, and J. A. Nolen, Appl. Phys. Lett. 89, 053124 (2006)."",""T. F. Baumann, J. Biener, Y. M. M. Wang, S. O. Kucheyev, E. J. Nelson, J. H. Satcher, J. W. Elam, M. J. Pellin, and A. V. Hamza, Chem. Mater. 18, 6106 (2006)."",""C. A. Wilson, D. N. Goldstein, J. A. McCormick, A. W. Weimer, and S. M. George, J. Vac. Sci. Technol. A 26, 430 (2008).""]" +,,WF6,B2H6,"2202, 2205, and 2206","[2202,2205,2206]","["""","""",""""]","[""Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4"",""Real-time sensing and metrology for atomic layer deposition processes and manufacturing"",""Novel contact-plug process with low-resistance nucleation layer using diborane-reduction tungsten atomic-layer-deposition method for 32 nm complementary metal-oxide-semiconductor devices and beyond""]","[[""Kim, S. H."",""Hwang, E. S."",""Kim, B. M."",""Lee, J. W."",""Sun, H. J."",""Hong, T. E."",""Kim, J. K."",""Sohn, H."",""Kim, J."",""Yoon, T. S.""],[""Henn-Lecordier, L."",""Lei, W."",""Anderle, M."",""Rubloff, G. W.""],[""Yutani, A."",""Ichinose, K."",""Maekawa, K."",""Asai, K."",""Kojima, M.""]]","[2005,2007,2008]","[""Electrochem. Solid-State Lett."",""J. Vac. Sci. Technol., B"",""Jpn. J. Appl. Phys.""]","[""S. H. Kim, E. S. Hwang, B. M. Kim, J. W. Lee, H. J. Sun, T. E. Hong, J. K. Kim, H. Sohn, J. Kim, and T. S. Yoon, Electrochem. Solid-State Lett. 8, C155 (2005)."",""L. Henn-Lecordier, W. Lei, M. Anderle, and G. W. Rubloff, J. Vac. Sci. Technol. B 25, 130 (2007)."",""A. Yutani, K. Ichinose, K. Maekawa, K. Asai, and M. Kojima, Jpn. J. Appl. Phys., Part 1 47, 2464 (2008).""]" +,WOx,WF6,H2O,2220,[2220],"[""""]","[""Tungsten atomic layer deposition on polymers""]","[[""C.A. Wilson"",""J.A. McCormick"",""A.S. Cavanagh"",""D.N. Goldstein"",""A.W. Weimer"",""S.M. George""]]",[2008],"[""Thin Solid Films""]","[""C. Wilson, J. McCormick, A. Cavanagh, D. Goldstein, A. Weimer, and S. George, Thin Solid Films 516, 6175 (2008).""]" +,,WF6,q,2221,[2221],"[""""]","[""Atomic Layer Epitaxy of Tungsten Oxide Films Using Oxyfluorides as Metal Precursors""]","[[""P. T agtstr om"",""P. M rtensson"",""U. Jansson"",""J.-O. Carlsson""]]",[1999],"[""J. Electrochem. Soc.""]","[""P. T€agtstr€om, P. Ma˚rtensson, U. Jansson, and J.-O. Carlsson, J. Electrochem. Soc. 146, 3139 (1999).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_021_table_016/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_021_table_016/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..0e0df6dc8d746d7f01a7b687db7e6c50a969fbb1 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_021_table_016/gold.csv @@ -0,0 +1,51 @@ +Z,Material,Reactant A,Reactant B,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,WFxOy,H2O,2220,[2220],"[""""]","[""Tungsten atomic layer deposition on polymers""]","[[""C.A. Wilson"",""J.A. McCormick"",""A.S. Cavanagh"",""D.N. Goldstein"",""A.W. Weimer"",""S.M. George""]]",[2008],"[""Thin Solid Films""]","[""C. Wilson, J. McCormick, A. Cavanagh, D. Goldstein, A. Weimer, and S. George, Thin Solid Films 516, 6175 (2008).""]" +,,WOCl4,– q,2222,[2222],"[""10.1021/ja906816y""]","[""Direct Atomic-Scale Observation of Redox-Induced Cation Dynamics in an Oxide-Supported Monolayer Catalyst: WOx/alpha-Fe2O3(0001)""]","[[""Feng, Zhenxing"",""Kim, Chang-Yong"",""Elam, Jeffrey W."",""Ma, Qing"",""Zhang, Zhan"",""Bedzyk, Michael J.""]]",[2009],"[""J. Am. Chem. Soc.""]","[""Z. Feng, C.-Y. Kim, J. W. Elam, Q. Ma, Z. Zhang, and M. J. Bedzyk, J. Am. Chem. Soc. 131, 18200 (2009).""]" +,,W2(NMe2)6,H2O,2223,[2223],"[""""]","[""PREPARATION OF W/Al _2 O _3 BY CHEMISORPTION OF WOCl _4 TO SURFACE SATURATION""]","[[""M. Lindblad"",""L. P. Lindfors""]]",[1993],"[""Proceedings of the 10th International Congress on Catalysis: \""New Frontiers in Catalysis\"", Budapest, Hungary, July 19-24, 1992""]","[""M. Lindblad and L. P. Lindfors, in Proceedings of the 10th International Congress on Catalysis: New Frontiers in Catalysis, Budapest, Hungary, 19-24 July 1992, Stud. Surf. Sci. Catal., edited by L. Guczi (Elsevier, Amsterdam, 1993), Vol. 75, pp. 1763–1770.""]" +,WxN,WF6,NH3,"944, 945, 2207, and 2224–2226","[944,945,2207,2224,2225,2226]","["""","""",""DOI: 10.1016/j.mee.2008.04.030"","""","""",""""]","[""Diffusion barrier deposition on a copper surface by atomic layer deposition"",""Atomic layer deposition of W _x N/TiN and WN _x C _y /TiN nanolaminates"",""Advanced tungsten plug process for beyond nanometer technology"",""Atomic layer deposition of tungsten(III) oxide thin films from W-2(NMe2)(6) and water: Precursor-based control of oxidation state in the thin film material"",""Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions"",""Atomic layer deposition of W1.5N barrier films for Cu metallization""]","[[""K.-E. Elers"",""V. Saanila"",""P. J. Soininen"",""J. T. Kostamo"",""S. Haukka"",""J. Juhanoja"",""W. F. A. Besling""],[""K.-E. Elers"",""V. Saanila"",""W.-M. Li"",""P. J. Soininen"",""J. T. Kostamo"",""S. Haukka"",""J. 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Mater. 21, 4868 (2009).""]" +,,Ir(CpEt)(cod),O2,2248,[2248],"[""""]","[""""]",[[]],[null],"[""""]","[""S. W. Kim, S. H. Kwon, D. K. Kwak, and S. W. Kang, J. Appl. Phys. 103, 023517 (2008).""]" +,,Ir(CpEt)(cod),NH3⚡,2249,[2249],"[""""]","[""""]",[[]],[null],"[""""]","[""S.-W. Kim, S.-H. Kwon, S.-J. Jeong, J.-S. Park, and S.-W. Kang, Electrochem. Solid-State Lett. 11, H303 (2008).""]" +,,Ir(CpMe)(chd),O2,2250,[2250],"[""""]","[""Phase control of iridium and iridium oxide thin films in atomic layer deposition""]","[[""Kim, S. W."",""Kwon, S. H."",""Kwak, D. K."",""Kang, S. W.""]]",[2008],"[""J. Appl. Phys.""]","[""S. W. Kim, S. H. Kwon, D. K. Kwak, and S. W. Kang, J. Appl. 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Niinist€o, Thin Solid Films 497, 77 (2006).""]" +,,PbI2,H2S,2277,[2277],"[""""]","[""Exploiting volatile lead compounds as precursors for the atomic layer deposition of lead dioxide thin films""]","[[""Harjuoja, J."",""Putkonen, M."",""Niinist o, L.""]]",[2006],"[""Thin Solid Films""]","[""J. Harjuoja, M. Putkonen, and L. Niinist€o, Thin Solid Films 497, 77 (2006).""]" +,,Pb(OAc)2,H2S,2277,[2277],"[""""]","[""Exploiting volatile lead compounds as precursors for the atomic layer deposition of lead dioxide thin films""]","[[""Harjuoja, J."",""Putkonen, M."",""Niinist o, L.""]]",[2006],"[""Thin Solid Films""]","[""J. Harjuoja, M. Putkonen, and L. Niinist€o, Thin Solid Films 497, 77 (2006).""]" +,,Pb(OtBu)2,H2S,2278,[2278],"[""""]","[""Initial growth behavior of a lead oxide thin film on Ir substrates by atomic layer deposition""]","[[""Lee, H. J."",""Kim, G. H."",""Lee, K."",""Hwang, C. S.""]]",[2007],"[""Electrochem. Solid-State Lett.""]","[""H. J. Lee, G. H. Kim, K. Lee, and C. S. 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Solid- State Lett. 10, G89 (2007).""]" +83,Bismuth,,,,[],[],[],[],[],[],[] +,BiOx,Bi[N(SiMe3)2]3,H2O,2282,[2282],"[""""]","[""Scanning tunneling spectroscopy of lead sulfide quantum wells fabricated by atomic layer deposition""]","[[""Wonyoung Lee"",""Neil P Dasgupta"",""Hee Joon Jung"",""Jung-Rok Lee"",""Robert Sinclair"",""Fritz B Prinz""]]",[2010],"[""Nanotechnology""]","[""W. Lee, N. P. Dasgupta, H. J. Jung, J.-R. Lee, R. Sinclair, and F. B. Prinz, Nanotechnology 21, 485402 (2010).""]" +,,Bi(thd)3,H2O,2283,[2283],"[""10.1021/la904122e""]","[""Area-Selective Atomic Layer Deposition of Lead Sulfide: Nanoscale Patterning and DFT Simulations""]","[[""Lee, Wonyoung"",""Dasgupta, Neil P."",""Trejo, Orlando"",""Lee, Jung-Rok"",""Hwang, Jaceun"",""Usui, Takane"",""Prinz, Fritz B.""]]",[2010],"[""Langmuir""]","[""W. Lee, N. P. Dasgupta, O. Trejo, J.-R. Lee, J. Hwang, T. Usui, and F. B. 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Deposition 11, 362 (2005).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_026_table_018/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_026_table_018/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..95f708b0f06f74db0aec661f667ac832d7711075 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_026_table_018/gold.csv @@ -0,0 +1,32 @@ +Compound,Precursors,Ref.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +MgAl2O4,Mg(C5H5)2 + Al(CH3)3 + O3,59,[59],"[""""]","[""Magnesium aluminate thin films by atomic layer deposition from organometallic precursors and water""]","[[""M. Putkonen"",""M. Nieminen"",""L. Niinist o""]]",[2004],"[""Thin Solid Films""]","[""M. Putkonen, M. Nieminen, and L. Niinist€o, Thin Solid Films 466, 103 (2004).""]" +LaAlO3,La(thd)3 + Al(acac)3 + O3,2284,[2284],"[""""]","[""Bismuth precursors for atomic layer deposition of bismuth-containing oxide films""]","[[""M. Vehkam aki"",""Timo Hatanp a a"",""M. Ritala"",""Markku Leskel a""]]",[2004],"[""J. Mater. Chem.""]","[""M. Vehkam€aki, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, J. Mater. Chem. 14, 3191 (2004).""]" +,La(iPr)AMD)3 + Al(CH3)3 + H2O,2285,[2285],"[""10.1039/b918175j""]","[""Study of bismuth alkoxides as possible precursors for ALD""]","[[""Hatanp a a, Timo"",""Vehkam aki, Marko"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2010],"[""Dalton Trans.""]","[""T. Hatanp€a€a, M. Vehkam€aki, M. Ritala, and M. Leskel€a, Dalton Trans. 39, 3219 (2010).""]" +NdAlO3,Nd(thd)3 + Al(CH3)3 + O3,1865,[1865],"[""""]","[""A comparative study on lanthanide oxide thin films grown by atomic layer deposition""]","[[""J. P aiv asaari"",""M. Putkonen"",""L. Niinist o""]]",[2005],"[""Thin Solid Films""]","[""J. 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Ritala"",""M. Leskel a""]]",[1999],"[""Electrochem. Solid-State Lett.""]","[""M. Vehkam€aki, T. Hatanp€a€a, T. H€anninen, M. Ritala, and M. Leskel€a, Electrochem. Solid-State Lett. 2, 504 (1999).""]" +,Bi(Ph)3 + O3 + Ti(OiPr)4 + H2O,663,[663],"[""""]","[""New approach to the ALD of bismuth silicates: Bi(CH2SiMe3)(3) acting as a precursor for both bismuth and silicon""]","[[""Harjuoja, J."",""Hatanp a a, T."",""Vehkam aki, M."",""V ayrynen, S."",""Putkonen, M."",""Niinist o, L."",""Ritala, M."",""Leskel a, M."",""Rauhala, E.""]]",[2005],"[""Chem. Vap. Deposition""]","[""J. Harjuoja, T. Hatanp€a€a, M. Vehkam€aki, S. V€ayrynen, M. Putkonen, L. Niinist€o, M. Ritala, M. Leskel€a, and E. Rauhala, Chem. Vap. Deposition 11, 362 (2005).""]" +PbTiO3,Pb(Ph)4 + O3 + Ti(OiPr)4 + H2O,2292,[2292],"[""""]","[""Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications - art. no. 222903""]","[[""Lee, S. W."",""Kwon, O. S."",""Han, J. H."",""Hwang, C. S.""]]",[2008],"[""Appl. Phys. Lett.""]","[""S. W. Lee, O. S. Kwon, J. H. Han, and C. S. Hwang, Appl. Phys. Lett. 92, 22903 (2008).""]" +,Pb(dmamp)2 + H2O + Ti(OtBu)4 H2O,2293,[2293],"[""""]","[""Atomic layer deposition of ferroelectric bismuth titanate Bi4Ti3O12 thin films""]","[[""Vehkam aki, M."",""Hatanp a a, T."",""Kemell, M."",""Ritala, M."",""Leskel a, M.""]]",[2006],"[""Chem. Mater.""]","[""M. Vehkam€aki, T. Hatanp€a€a, M. Kemell, M. Ritala, and M. Leskel€a, Chem. Mater. 18, 3883 (2006).""]" +LaMnO3,La(thd)3 + Mn(thd)3 + O3,1038,[1038],"[""""]","[""Thin film deposition of lanthanum manganite perovskite by the ALE process""]","[[""O. Nilsen"",""M. Peussa"",""H. Fjellv g"",""L. Niinist o"",""A. Kjekshus""]]",[1999],"[""J. Mater. Chem.""]","[""O. Nilsen, M. Peussa, H. Fjellva˚g, L. Niinist€o, and A. Kjekshus, J. Mater. Chem. 9, 1781 (1999).""]" +LaCoO3,La(thd)3 + Co(thd)2 + O3,1088,[1088],"[""""]","[""Growth of LaCoO _3 thin films from eta -diketonate precursors""]","[[""H. Seim"",""M. Nieminen"",""L. Niinist o"",""H. Fjellv g"",""L.-S. Johansson""]]",[1997],"[""Appl. Surf. Sci.""]","[""H. Seim, M. Nieminen, L. Niinist€o, H. Fjellva˚g, and L.-S. Johansson, Appl. Surf. Sci. 112, 243 (1997).""]" +LaNiO3,La(thd)3 + Ni(thd)2 + O3,1111,[1111],"[""""]","[""Deposition of LaNiO _3 thin films in an atomic layer epitaxy reactor""]","[[""H. Seim"",""H. M ols a"",""M. Nieminen"",""H. Fjellv g"",""L. Niinist o""]]",[1997],"[""J. Mater. Chem.""]","[""H. Seim, H. M€ols€a, M. Nieminen, H. Fjellva˚g, and L. Niinist€o, J. Mater. Chem. 7, 449 (1997).""]" +LaGaO3,La(thd)3 + Ga(thd)3 + O3,2294,[2294],"[""""]","[""Atomic layer deposition and post-deposition annealing of PbTiO3 thin films""]","[[""Harjuoja, J."",""Kosola, A."",""Putkonen, M."",""Niinist o, L.""]]",[2006],"[""Thin Solid Films""]","[""J. Harjuoja, A. Kosola, M. Putkonen, and L. Niinist€o, Thin Solid Films 496, 346 (2006).""]" +PbZrO3,PH4Pb + Zr(thd)4 + O3,2295,[2295],"[""""]","[""Atomic layer deposition and electrical properties of PbTiO3 thin films using metallorganic precursors and H2O""]","[[""Hwang, G. W."",""Lee, H. J."",""Lee, K."",""Hwang, C. S.""]]",[2007],"[""J. Electrochem. Soc.""]","[""G. W. Hwang, H. J. Lee, K. Lee, and C. S. Hwang, J. Electrochem. Soc. 154, G69 (2007).""]" +LiLaOx,Li(thd) + La(thd)3 + O3,45,[45],"[""10.1039/b913466b""]","[""Atomic layer deposition of lithium containing thin films""]","[[""Putkonen, Matti"",""Aaltonen, Titta"",""Alnes, Mari"",""Sajavaara, Timo"",""Nilsen, Ola"",""Fjellv g, Helmer""]]",[2009],"[""J. Mater. Chem.""]","[""M. Putkonen, T. Aaltonen, M. Alnes, T. Sajavaara, O. Nilsen, and H. Fjellva˚g, J. Mater. Chem. 19, 8767 (2009).""]" +LaLuO3,La(thd)3 + Lu(thd)3 + O3,2296,[2296],"[""""]","[""Atomic layer epitaxy growth of LaGaO _3 thin films""]","[[""M. Nieminen"",""S. Lehto"",""L. Niinisto""]]",[2001],"[""J. Mater. Chem.""]","[""M. Nieminen, S. Lehto, and L. Niinist€o, J. Mater. Chem. 11, 3148 (2001).""]" +SrTa2O6,SrTa2(OEt)10(dmae)2 + H2O,2297,[2297],"[""""]","[""Atomic layer deposition of PbZrO3 thin films""]","[[""Harjuoja, J."",""V ayrynen, S."",""Putkonen, M."",""Niinist o, L."",""Rauhala, E.""]]",[2007],"[""Appl. Surf. Sci.""]","[""J. Harjuoja, S. V€ayrynen, M. Putkonen, L. Niinist€o, and E. Rauhala, Appl. Surf. Sci. 253, 5228 (2007).""]" +SrBi2Ta2O9,SrTa2(OEt)10(dmae)2 + H2O + Bi(N(SiMe3)2)3 + H2O,2282,[2282],"[""""]","[""Scanning tunneling spectroscopy of lead sulfide quantum wells fabricated by atomic layer deposition""]","[[""Wonyoung Lee"",""Neil P Dasgupta"",""Hee Joon Jung"",""Jung-Rok Lee"",""Robert Sinclair"",""Fritz B Prinz""]]",[2010],"[""Nanotechnology""]","[""W. Lee, N. P. Dasgupta, H. J. Jung, J.-R. Lee, R. Sinclair, and F. B. Prinz, Nanotechnology 21, 485402 (2010).""]" +Ge2Sb2Te5,GeCl2·L + SbCl3 + (R3Si)2Te,1148,[1148],"[""10.1021/ja8090388""]","[""Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium""]","[[""Pore, Viljami"",""Hatanp a a, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2009],"[""J. Am. Chem. Soc.""]","[""V. Pore, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, J. Am. Chem. Soc. 131, 3478 (2009).""]" +CuGaS2,CuCp·PEt3 + Et3Ga + H2S,2298,[2298],"[""DOI: 10.1016/j.tsf.2008.08.064""]","[""Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric""]","[[""M. Roeckerath"",""T. Heeg"",""J.M.J. Lopes"",""J. Schubert"",""S. Mantl"",""A. Besmehn"",""P. Myllym aki"",""L. Niinist o""]]",[2008],"[""Thin Solid Films""]","[""M. Roeckerath, T. Heeg, J. Lopes, J. Schubert, S. Mantl, A. Besmehn, P. Myllym€aki, and L. Niinist€o, Thin Solid Films 517, 201 (2008).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_028_table_019/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_028_table_019/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..00485cc02f3522a2cf5871b724e5e3d85c03a91e --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_028_table_019/gold.csv @@ -0,0 +1,24 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +Li2O (LiOH),,,,Amorphous,,,,,,,[],[],[],[],[],[],[] +,Li(OtBu),H2O,"Si, SLG",225,,,,,,44,[44],"[""10.1039/b923490j""]","[""Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition""]","[[""Aaltonen, Titta"",""Alnes, Mari"",""Nilsen, Ola"",""Costelle, Leila"",""Fjellv g, Helmer""]]",[2010],"[""J. Mater. Chem.""]","[""T. Aaltonen, M. Alnes, O. Nilsen, L. Costelle, and H. Fjellva˚g, J. Mater. Chem. 20, 2877 (2010).""]" +B2O3,,,,Amorphous,Hexagonal,,,,,,[],[],[],[],[],[],[] +,BBr3,H2O,"Si, SLG",20–50,,,,,,47,[47],"[""""]","[""Atomic layer deposition of B2O3 thin films at room temperature""]","[[""Putkonen, M."",""Niinist o, L.""]]",[2006],"[""Thin Solid Films""]","[""M. Putkonen and L. Niinist€o, Thin Solid Films 514, 145 (2006).""]" +MgO,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Mg(thd)2,O3,"Si, SLG",,225–250,,,,,65,[65],"[""""]","[""Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy""]","[[""M. Putkonen"",""L.-S. Johansson"",""E. Rauhala"",""L. Niinist o""]]",[1999],"[""J. Mater. Chem.""]","[""M. Putkonen, L.-S. Johansson, E. Rauhala, and L. Niinist€o, J. Mater. Chem. 9, 2449 (1999).""]" +,Mg(thd)2,H2O2,SLG,,325–425,,,,,64,[64],"[""""]","[""Properties of [Mg _2 (thd) _4 ] as a Precursor for Atomic Layer Deposition of MgO Thin Films and Crystal Structures of [Mg _2 (thd) _4 ] and [Mg(thd) _2 (EtOH) _2 ]""]","[[""T. Hatanp a a"",""J. Ihanus"",""J. Kansikas"",""I. Mutikainen"",""M. Ritala"",""M. Leskel a""]]",[1999],"[""Chem. Mater.""]","[""T. Hatanp€a€a, J. Ihanus, J. Kansikas, I. Mutikainen, M. Ritala, and M. Leskel€a, Chem. Mater. 11, 1846 (1999).""]" +,Mg(Cp)2,H2O,"H-Si, Si, SLG",,105–375,,,,,"58, 60, and 61","[58,60,61]","["""","""",""""]","[""Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films"",""Atomic layer deposition of Zn1-xMgxO buffer layers for Cu(In,Ga)Se-2 solar cells"",""Atomic layer deposition of magnetic thin films""]","[[""M. Putkonen"",""T. Sajavaara"",""L. Niinist o""],[""T orndahl, T."",""Platzer-Bj orkman, C."",""Kessler, J."",""Edoff, M.""],[""Mantovan, R."",""Georcieva, M."",""Perego, M."",""Lu, H. L."",""Zenkevich, A."",""Scarel, G."",""Fanciulli, M.""]]","[2000,2007,2007]","[""J. Mater. Chem."",""Prog. Photovoltaics"",""Acta Phys. Pol. A""]","[""M. Putkonen, T. Sajavaara, and L. Niinist€o, J. Mater. Chem. 10, 1857 (2000)."",""T. T€orndahl, C. Platzer-Bj€orkman, J. Kessler, and M. Edoff, Prog. Photovoltaics 15, 225 (2007)."",""R. Mantovan, M. Georcieva, M. Perego, H. L. Lu, A. Zenkevich, G. Scarel, and M. Fanciulli, Acta Phys. Pol. A 112, 1271 (2007).""]" +,Mg(Cp)2,H2O,Si,370–500,500–900,,,,,55–57,"[55,56,57]","["""","""",""""]","[""Temperature-dependence of the growth orientation of atomic layer growth MgO"",""Preparation and characterization of thin-films of MgO , Al _2 O _3 and MgAl _2 O _4 by atomic layer deposition"",""THE SURFACE-MORPHOLOGY OF ATOMIC LAYER DEPOSITED MAGNESIA""]","[[""R. Huang"",""A. H. Kitai""],[""R. Huang"",""A. H. Kitai""],[""R. Huang"",""A. H. Kitai""]]","[1992,1993,1993]","[""Appl. Phys. Lett."",""J. Electron. Mater."",""J. Mater. Sci. Lett.""]","[""R. Huang and A. H. Kitai, Appl. Phys. Lett. 61, 1450 (1992)."",""R. Huang and A. H. Kitai, J. Electron. Mater. 22, 215 (1993)."",""R. Huang and A. H. Kitai, J. Mater. Sci. Lett. 12, 1444 (1993).""]" +,Mg(CpEt)2,H2O,Si,,150,,,,,63,[63],"[""10.1021/jp806088m""]","[""Atomic Layer Deposition of MgO Using Bis(ethylcyclopentadienyl)magnesium and H2O""]","[[""Burton, B. B."",""Goldstein, D. N."",""George, S. M.""]]",[2009],"[""J. Phys. Chem. C""]","[""B. B. Burton, D. N. Goldstein, and S. M. George, J. Phys. Chem. C 113, 1939 (2009).""]" +Al2O3,,,,Amorphous,Hexagonal,Cubic,Tetragonal,,,,[],[],[],[],[],[],[] +,AlCl3,H2O,"Si, SiO2, glass, ITO, Al, PC",100–500,,600–800,600–800,,,"79, 83, 86, 88, 93, and 2303","[79,83,86,88,93,2303]","["""","""","""","""","""",""""]","[""Properties of amorphous Al _2 O _3 films grown by ALE"",""Studies on the morphology of Al _2 O _3 thin films grown by atomic layer epitaxy"",""Dependence of atomic layer-deposited Al _2 O _3 films characteristics on growth temperature and Al precursors of Al ( CH _3 ) _3 and AlCl _3"",""Preparation and characterization of phosphorus-doped aluminum oxide thin films"",""Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon"",""""]","[[""J. Aarik"",""A. Aidla"",""A. Jaek"",""A.-A. Kiisler"",""A.-A. Tammik""],[""M. Ritala"",""H. Saloniemi"",""M. Leskel a"",""T. Prohaska"",""G. Friedbacher"",""M. Grasserbauer""],[""S. J. Yun"",""K. H. Lee"",""J. Skarp"",""H. R. Kim"",""K. S. Nam""],[""M. Tiitta"",""E. Nyk anen"",""P. Soininen"",""L. Niinist o"",""M. Leskel a"",""R. Lappalainen""],[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""de Castro, A."",""Bail on, L."",""Kukli, K."",""Aidla, A."",""Aarik, J."",""M andar, H."",""Uustare, T."",""Lu, J."",""H rsta, A.""],[]]","[1990,1996,1997,1998,2006,null]","[""Acta Polytech. Scand., Ser. Chem. Technol. Metall."",""Thin Solid Films"",""J. Vac. Sci. Technol., A"",""Mater. Res. Bull."",""J. Appl. Phys."",""""]","[""J. Aarik, A. Aidla, A. Jaek, A.-A. Kiisler, and A.-A. Tammik, Acta Polytech. Scand., Chem. Technol. Metall. Ser. 195, 201 (1990)."",""M. Ritala, H. Saloniemi, M. Leskel€a, T. Prohaska, G. Friedbacher, and M. Grasserbauer, Thin Solid Films 286, 54 (1996)."",""S. J. Yun, K. H. Lee, J. Skarp, H. R. Kim, and K. S. Nam, J. Vac. Sci. Technol. A 15, 2993 (1997)."",""M. Tiitta, E. Nyk€anen, P. Soininen, L. Niinist€o, M. Leskel€a, and R. Lappalainen, Mater. Res. Bull. 33, 1315 (1998)."",""S. Due~nas, H. Cast\u0003an, H. Garc\u0003ıa, A. de Castro, L. Bail\u0003on, K. Kukli, A. Aidla, J. Aarik, H. M€andar, T. Uustare, J. Lu, and A. Ha˚rsta, J. Appl. Phys. 99, 054902 (2006)."",""B. A. Latella, G. Triani, and P. J. Evans, Scr. Mater. 56, 493 (2007).""]" +,AlCl3,O2,Sapphiree,,660,,,,,101,[101],"[""""]","[""MOLECULAR LAYER EPITAXY OF - Al _2 O _3""]","[[""G. Oya"",""Y. Sawada""]]",[1990],"[""J. Cryst. Growth""]","[""G. Oya and Y. Sawada, J. Cryst. Growth 99, 572 (1990).""]" +,AlCl3,O2,Nbe,,450,,,,,101,[101],"[""""]","[""MOLECULAR LAYER EPITAXY OF - Al _2 O _3""]","[[""G. Oya"",""Y. Sawada""]]",[1990],"[""J. Cryst. Growth""]","[""G. Oya and Y. Sawada, J. Cryst. Growth 99, 572 (1990).""]" +,AlCl3,tBuOH,"Si, SLG, ITO, Al",500,,,,,,88,[88],"[""""]","[""Preparation and characterization of phosphorus-doped aluminum oxide thin films""]","[[""M. Tiitta"",""E. Nyk anen"",""P. Soininen"",""L. Niinist o"",""M. Leskel a"",""R. Lappalainen""]]",[1998],"[""Mater. Res. Bull.""]","[""M. Tiitta, E. Nyk€anen, P. Soininen, L. Niinist€o, M. Leskel€a, and R. Lappalainen, Mater. Res. Bull. 33, 1315 (1998).""]" +,AlCl3,Al(OEt)3,H-Si,400,,,,,,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,AlCl3,Al(OiPr)3,"SLG, H-Si",150–375,,,,,,103 and 104,"[103,104]","["""",""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Atomic layer deposition of Al _2 O _3 films using AlCl _3 and Al(O ^i Pr) _3 as precursors""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""P. I. R ais anen"",""M. Ritala"",""M. Leskel a""]]","[2000,2002]","[""Science"",""J. Mater. Chem.""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000)."",""P. I. R€ais€anen, M. Ritala, and M. Leskel€a, J. Mater. Chem. 12, 1415 (2002).""]" +,AlMe3,H2O,"Si, H-Si, GaAs, SiC, MgO, ZnO, CuO, LiMnO2, LiCoO2, SiO2, Al2O3, TiO2, PC, PMMA, PEEK, PTFE, PET, PP, GaQ3, cotton, paper, CNC, MWCNT, Fe, W, SS",25–500,,,,,,"86, 94, 107, 108, 118, 123, 158, 159, 179, 187, 189, 207, 209, 214, 219, 223–226, 243, 250, 258, 262, 268, 273, 279, 282, 298, 302, 309, 315, 321, 339, 348, 361, 362, 367, 387, 392, 624, 657, 770, 832, 1922, and 2304–2309","[86,94,107,108,118,123,158,159,179,187,189,207,209,214,219,223,224,225,226,243,250,258,262,268,273,279,282,298,302,309,315,321,339,348,361,362,367,387,392,624,657,770,832,1922,2304,2305,2306,2307,2308,2309]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1002/smll.200800795"",""10.1063/1.2952487"",""10.1016/j.jcrysgro.2009.07.022"",""10.1002/cvde.200906775"",""10.1063/1.3103254"",""10.1002/adma.200803440"",""10.1149/1.3211959"",""10.1149/1.3118501"","""",""10.1021/ja100396n"",""10.1088/0953-8984/22/15/155401"",""10.1063/1.3399776"",""DOI: 10.1016/j.sna.2010.02.015"",""DOI: 10.1016/j.ssc.2010.06.023"",""10.1021/jp806638e"","""","""","""","""","""","""","""",""10.1063/1.3013439"","""",""""]","[""Dependence of atomic layer-deposited Al _2 O _3 films characteristics on growth temperature and Al precursors of Al ( CH _3 ) _3 and AlCl _3"",""Surface modification of thermoplastics by atomic layer deposition of Al2O3 and TiO2 thin films"",""Sequential surface chemical-reaction limited growth of high-quality Al _2 O _3 dielectrics"",""The reaction pathway for the growth of alumina on high surface area alumina and in ultrahigh vacuum by a reaction between trimethyl aluminum and water"",""Properties of Al _2 O _3 -films deposited on silicon by atomic layer epitaxy"",""Atomic layer deposited thin films for corrosion protection"",""Al _2 O _3 nanotubes and nanorods fabricated by coating and filling of carbon nanotubes with atomic-layer deposition"",""Low-temperature Al _2 O _3 atomic layer deposition"",""Effect of atomic layer deposition coatings on the surface structure of anodic aluminum oxide membranes"",""Optimization and structural characterization of W/Al2O3 nanolaminates grown using atomic layer deposition techniques"",""Characteristics of hafnium-aluminum-oxide thin films deposited by using atomic layer deposition with various aluminum compositions"",""Atomic layer deposition of TiO2 and Al2O3 thin films and nanolaminates"",""Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment"",""Surface modification of titania nanoparticles using ultrathin ceramic films"",""Single-crystalline MgAl2O4 spinel nanotubes using a reactive and removable MgO nanowire template"",""Annealing of Al2O3 thin films prepared by atomic layer deposition"",""Organic nanowire-templated fabrication of alumina nanotubes by atomic layer deposition"",""Structural properties of epitaxial gamma-Al2O3(111) thin films on 4H-SiC(0001)"",""Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC"",""Synthesis of oxidation-resistant metal nanoparticles via atomic layer deposition"",""Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications"",""Influence of Temperature on Evolution of Coaxial ZnO/Al2O3 One-Dimensional Heterostructures: From Core-Shell Nanowires to Spinel Nanotubes and Porous Nanowires"",""Rayleigh-instabilty-induced metal nanoparticle chains encapsulated in nanotubes produced by atomic layer deposition"",""Fabrication of ZnO/Al2O3 core-shell nanostructures and crystalline Al2O3 nanotube"",""Template-directed gas-phase fabrication of oxide nanotubes"",""Transmission Electron Microscopy in situ Fabrication of ZnO/Al2O3 Composite Nanotubes by Electron-Beam-Irradiation-Induced Local Etching of ZnO/Al2O3 Core/Shell Nanowires"",""Synthesis and optical properties of ZnO and carbon nanotube based coaxial heterostructures"",""MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer"",""Atmospheric Pressure Process for Coating Particles Using Atomic Layer Deposition"",""Nucleation period, surface roughness, and oscillations in mass gain per cycle during W atomic layer deposition on Al2O3"",""Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable Encapsulation of Organic Electronics"",""Microencapsulation of Moisture-Sensitive CaS:Eu2+ Particles with Aluminum Oxide"",""Photoluminescence of GaQ(3)-Al2O3 Core-Shell Nanowires"","""",""Ni(III)/(IV) Bis(dicarbollide) as a Fast, Noncorrosive Redox Shuttle for Dye-Sensitized Solar Cells"",""Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition"",""Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates"",""Thin film absorbers for visible, near-infrared, and short-wavelength infrared spectra"",""Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition"",""SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy"",""Atomic layer chemical vapor deposition and electrical characterization of hafnium silicate films"",""Controlled pore structure modification of diatoms by atomic layer deposition of TiO2"",""Ir/oxide/cellulose composites for catalytic purposes prepared by atomic layer deposition"",""Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-kappa dielectric HfO2 layers"","""",""Toughness and adhesion of atomic layer deposited alumina films on polycarbonate substrates"",""Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs"",""Berreman effect in infrared absorption spectroscopy of ionic oxide coatings formed by atomic layer deposition on three-dimensional structures"",""The electrical and physical analysis of Pt gate/Al2O3/p-Si (100) with dual high-k gate oxide thickness for deep submicron complementary metal-oxide-semiconductor device with low-power and high reliability"",""In situ reflective high-energy electron diffraction analysis during the initial stage of a trimethylaluminum/water ALD process""]","[[""S. J. Yun"",""K. H. Lee"",""J. Skarp"",""H. R. Kim"",""K. S. Nam""],[""Kemell, Marianna"",""F arm, Elina"",""Ritala, Mikko"",""Leskel a, Markku""],[""G. S. Higashi"",""C. G. Fleming""],[""C. Soto"",""W. T. Tysoe""],[""P. Ericsson"",""S. Bengtsson"",""J. Skarp""],[""R. Matero"",""M. Ritala"",""M. Leskela"",""T. Salo"",""J. Aromaa"",""O. Fors en""],[""J. S. Lee"",""B. Min"",""K. Cho"",""S. Kim"",""J. Park"",""Y. T. Lee"",""N. S. Kim"",""M. S. Lee"",""S. O. Park"",""J. T. Moon""],[""M. D. Groner"",""F. H. Fabreguette"",""J. W. Elam"",""S. M. George""],[""Xiong, G."",""Elam, J. W."",""Feng, H."",""Han, C. Y."",""Wang, H. H."",""Iton, L. E."",""Curtiss, L. A."",""Pellin, M. J."",""Kung, M."",""Kung, H."",""Stair, P. C.""],[""Sechrist, Z. A."",""Fabreguette, F. H."",""Heintz, O."",""Phung, T. M."",""Johnson, D. C."",""George, S. M.""],[""Koo, J."",""Lee, J."",""Kim, S."",""Do Kim, Y."",""Jeon, H."",""Kim, D. S."",""Kim, Y.""],[""Mitchell, D. R. G."",""Triani, G."",""Attard, D. J."",""Finnie, K. S."",""Evans, P. J."",""Barb e, C. J."",""Bartlett, J. R.""],[""Lu, H. L."",""Sun, L."",""Ding, S. J."",""Xu, M."",""Zhang, D. W."",""Wang, L. K.""],[""Hakim, L. F."",""McCormick, J. A."",""Zhan, G. D."",""Weimer, A. W."",""Li, P."",""George, S. M.""],[""Fan, H. J."",""Knez, M."",""Scholz, R."",""Nielsch, K."",""Pippel, E."",""Hesse, D."",""G osele, U."",""Zacharias, M.""],[""Zhang, L."",""Jiang, H. C."",""Liu, C."",""Dong, J. W."",""Chow, P.""],[""Wang, C. C."",""Kei, C. C."",""Yu, Y. W."",""Perng, T. P.""],[""Tanner, C. M."",""Sawkar-Mathur, M."",""Lu, J."",""Blom, H. O."",""Toney, M. F."",""Chang, J. P.""],[""Tanner, C. M."",""Perng, Y. C."",""Frewin, C."",""Saddow, S. E."",""Chang, J. P.""],[""Hakim, L. F."",""Vaughn, C. L."",""Dunsheath, H. J."",""Carney, C. S."",""Liang, X."",""Li, P."",""Weimer, A. W.""],[""Chiou, Y. K."",""Chang, C. H."",""Wang, C. C."",""Lee, K. Y."",""Wu, T. B."",""Kwo, R."",""Hong, M. H.""],[""Yang, Y."",""Kim, D.S."",""Knez, M."",""Scholz, R."",""Berger, A."",""Pippel, E."",""Hesse, D."",""G osele, U."",""Zacharias, M.""],[""Qin, Y."",""Lee, S. M."",""Pan, A."",""G osele, U."",""Knez, M.""],[""Huang, J. Y."",""Liu, S."",""Wang, Y."",""Ye, Z. Z.""],[""Bae, C. D."",""Kim, S. Y."",""Ahn, B. Y."",""Kim, J. Y."",""Sung, M. M."",""Shin, H. J.""],[""Yang, Yang"",""Scholz, Roland"",""Berger, Andreas"",""Kim, Dong Sik"",""Knez, Mato"",""Hesse, Dieirich"",""G osele, Ulrich"",""Zacharias, Margit""],[""Kim, D. S."",""Lee, S. -M."",""Scholz, R."",""Knez, M."",""G osele, U."",""Fallert, J."",""Kalt, H."",""Zacharias, M.""],[""Fenwick, William E."",""Li, Nola"",""Xu, Tianming"",""Melton, Andrew"",""Wang, Shenjie"",""Yu, Hongbo"",""Summers, Christopher"",""Jamil, Muhammad"",""Ferguson, Ian T.""],[""Beetstra, Renske"",""Lafont, Ugo"",""Nijenhuis, John"",""Kelder, Erik M."",""van Ommen, J. Ruud""],[""Wind, R. W."",""Fabreguette, F. H."",""Sechrist, Z. A."",""George, S. M.""],[""Meyer, Jens"",""Goerrn, Patrick"",""Bertram, Franz"",""Hamwi, Sami"",""Winkler, Thomas"",""Johannes, Hans-Hermann"",""Weimann, Thomas"",""Hinze, Peter"",""Riedl, Thomas"",""Kowalsky, Wolfgang""],[""Avci, N."",""Musschoot, J."",""Smet, P. F."",""Korthout, K."",""Avci, A."",""Detavernier, C."",""Poelman, D.""],[""Wang, Chih-Chieh"",""Kei, Chi-Chung"",""Tao, Ye"",""Perng, Tsong-Pyng""],[],[""Li, Tina C."",""Spokoyny, Alexander M."",""She, Chunxing"",""Farha, Omar K."",""Mirkin, Chad A."",""Marks, Tobin J."",""Hupp, Joseph T.""],[""Scarel, Giovanna"",""Na, Jeong-Seok"",""Parsons, Gregory N.""],[""Shin, Byungha"",""Weber, Justin R."",""Long, Rathnait D."",""Hurley, Paul K."",""Van de Walle, Chris G."",""McIntyre, Paul C.""],[""M. Laamanen"",""M. Blomberg"",""R.L. Puurunen"",""A. Miranto"",""H. Kattelus""],[""Yan Xu"",""Lin Chen"",""Qing-Qing Sun"",""Jing-Jing Gu"",""Hong-Liang Lu"",""Peng-Fei Wang"",""Shi-Jin Ding"",""David Wei Zhang""],[""Burton, B. B."",""Kang, S. 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Solid-State Lett. 7, F45 (2004).""]" +,AlMe3,Al(OiPr)3,H-Si,300,,,,,,103,[103],"[""""]","[""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources""]","[[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""]]",[2000],"[""Science""]","[""M. Ritala, K. Kukli, A. Rahtu, P. I. R€ais€anen, M. Leskel€a, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).""]" +,AlMe2Cl,H2O,SLG,125–500,,,,,,462,[462],"[""""]","[""In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors""]","[[""Cheng, C. W."",""Fitzgerald, E. A.""]]",[2008],"[""Appl. Phys. Lett.""]","[""C. W. Cheng and E. A. Fitzgerald, Appl. Phys. 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Lappalainen""]]",[1998],"[""Mater. Res. Bull.""]","[""M. Tiitta, E. Nyk€anen, P. Soininen, L. Niinist€o, M. Leskel€a, and R. Lappalainen, Mater. Res. Bull. 33, 1315 (1998).""]" +,Al(OnPr)3,tBuOH,"Si, SLG, ITO, Al",500,,,,,,88,[88],"[""""]","[""Preparation and characterization of phosphorus-doped aluminum oxide thin films""]","[[""M. Tiitta"",""E. Nyk anen"",""P. Soininen"",""L. Niinist o"",""M. Leskel a"",""R. Lappalainen""]]",[1998],"[""Mater. Res. Bull.""]","[""M. Tiitta, E. Nyk€anen, P. Soininen, L. Niinist€o, M. Leskel€a, and R. Lappalainen, Mater. Res. Bull. 33, 1315 (1998).""]" +,Al(mmp)3,H2O,Si,250,,,,,,466,[466],"[""""]","[""Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water""]","[[""W. Cho"",""K. Sung"",""K. S. An"",""S. S. Lee"",""T. M. Chung"",""Y. Kim""]]",[2003],"[""J. Vac. Sci. Technol., A""]","[""W. Cho, K. Sung, K. S. An, S. S. Lee, T. M. Chung, and Y. Kim, J. Vac. Sci. Technol. A 21, 1366 (2003).""]" +,Al(NMe2)3,H2O,Si,200–400,,,,,,469,[469],"[""""]","[""Controlling interfacial reactions between HfO2 and Si using ultrathin Al2O3 diffusion barrier layer""]","[[""Katamreddy, R."",""Inman, R."",""Jursich, G."",""Soulet, A."",""Takoudis, C.""]]",[2006],"[""Appl. Phys. Lett.""]","[""R. Katamreddy, R. Inman, G. Jursich, A. Soulet, and C. Takoudis, Appl. Phys. Lett. 89, 262906 (2006).""]" +,Al(NEt2)3,H2O,Si,250–325,,,,,,470,[470],"[""""]","[""ALD and characterization of aluminum oxide deposited on Si (100) using tris(diethylamino) aluminum and water vapor""]","[[""Katamreddy, R."",""Inman, R."",""Jursich, G."",""Soulet, A."",""Takoudis, C.""]]",[2006],"[""J. Electrochem. Soc.""]","[""R. Katamreddy, R. Inman, G. Jursich, A. Soulet, and C. Takoudis, J. Electrochem. Soc. 153, C701 (2006).""]" +,Al(NEt2)3,O3,Si,200–325,,,,,,472 and 473,"[472,473]","["""",""""]","[""Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100)"",""Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O-3 and metal(diethylamino) precursors""]","[[""Katamreddy, R."",""Inman, R."",""Jursich, G."",""Soulet, A."",""Nicholls, A."",""Takoudis, C.""],[""Katamreddy, R."",""Inman, R."",""Jursich, G."",""Soulet, A."",""Takoudis, C.""]]","[2007,2007]","[""Thin Solid Films"",""J. Mater. Res.""]","[""R. Katamreddy, R. Inman, G. Jursich, A. Soulet, A. Nicholls, and C. Takoudis, Thin Solid Films 515, 6931 (2007)."",""R. Katamreddy, R. Inman, G. Jursich, A. Soulet, and C. Takoudis, J. Mater. Res. 22, 3455 (2007).""]" +,Al(NiPr2)3,H2O,Si,250–325,,,,,,470,[470],"[""""]","[""ALD and characterization of aluminum oxide deposited on Si (100) using tris(diethylamino) aluminum and water vapor""]","[[""Katamreddy, R."",""Inman, R."",""Jursich, G."",""Soulet, A."",""Takoudis, C.""]]",[2006],"[""J. Electrochem. Soc.""]","[""R. Katamreddy, R. Inman, G. Jursich, A. Soulet, and C. Takoudis, J. Electrochem. Soc. 153, C701 (2006).""]" +SiO2,,,,Amorphous,,,,,,,[],[],[],[],[],[],[] +,Si(OMe)4,H2O,Au-TiO2 catalyst,150,,,,,,602,[602],"[""10.1143/JJAP.49.04DB11""]","[""Low-Temperature Silicon Oxide Offset Spacer Using Plasma-Enhanced Atomic Layer Deposition for High-k/Metal Gate Transistor""]","[[""Murata, Tatsunori"",""Miyagawa, Yoshihiro"",""Nishida, Yukio"",""Yamamoto, Yoshiki"",""Yamashita, Tomohiro"",""Matsuura, Masazumi"",""Asai, Koyu"",""Miyatake, Hiroshi""]]",[2010],"[""Jpn. J. Appl. Phys.""]","[""T. Murata, Y. Miyagawa, Y. Nishida, Y. Yamamoto, T. Yamashita, M. Matsuura, K. Asai, and H. Miyatake, Jpn. J. Appl. Phys., Part 1 49, 04DB11 (2010).""]" +,SiH(NMe2)3,H2O2,TiO2,500,,,,,,624,[624],"[""10.1021/jp806638e""]","[""SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy""]","[[""Burton, B. B."",""Kang, S. W."",""Rhee, S. W."",""George, S. M.""]]",[2009],"[""J. Phys. Chem. C""]","[""B. B. Burton, S. W. Kang, S. W. Rhee, and S. M. George, J. Phys. Chem. C 113, 8249 (2009).""]" +,SiH2(NMe2)2,O3,H-Si,225,,,,,,2310,[2310],"[""10.1149/1.2971024""]","[""Properties of MIS capacitors using the atomic-layer-deposited ZnO semiconductor and Al2O3 insulator""]","[[""Song, Jaewon"",""Oh, Him Chan"",""Park, Tae Joo"",""Hwang, Cheol Seong"",""Park, Sang-Hee Ko"",""Yoon, Sung Min"",""Hwang, Chi-Sun""]]",[2008],"[""J. Electrochem. Soc.""]","[""J. Song, H. C. Oh, T. J. Park, C. S. Hwang, S. -H. K. Park, S. M. Yoon, and C.-S. Hwang, J. Electrochem. Soc. 155, H858 (2008).""]" +CaO,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Ca(thd)2,O3,"Si, Glass",225–350,350,,,,,672 and 673,"[672,673]","["""",""""]","[""Precursor properties of calcium eta -diketonate in vapor phase atomic layer epitaxy"",""Growth of calcium carbonate by the atomic layer chemical vapour deposition technique""]","[[""J. Aarik"",""A. Aidla"",""A. Jaek"",""M. Leskel a"",""L. Niinist o""],[""O. Nilsen"",""H. Fjellv g"",""A. Kjekshus""]]","[1994,2004]","[""Appl. Surf. Sci."",""Thin Solid Films""]","[""J. Aarik, A. Aidla, A. Jaek, M. Leskel€a, and L. Niinist€o, Appl. Surf. Sci. 75, 33 (1994)."",""O. Nilsen, H. Fjellva˚g, and A. Kjekshus, Thin Solid Films 450, 240 (2004).""]" +,Ca(CpiPr3)2,H2O,"Si, borosilicate",,205–300,,,,,674,[674],"[""10.1016/j.tsf.2009.03.013""]","[""Atomic layer deposition and characterization of biocompatible hydroxyapatite thin films""]","[[""Putkonen, Matti"",""Sajavaara, Timo"",""Rahkila, Paavo"",""Xu, Leiting"",""Cheng, Sulin"",""Niinist o, Lauri"",""Whitlow, Harry J.""]]",[2009],"[""Thin Solid Films""]","[""M. Putkonen, T. Sajavaara, P. Rahkila, L. Xu, S. Cheng, L. Niinist€o, and H. J. Whitlow, Thin Solid Films 517, 5819 (2009).""]" +Sc2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Sc(thd)3,O3,"SLG, Si",,335–375,,,,,682,[682],"[""""]","[""Novel ALD process for depositing CaF2 thin films""]","[[""Pilvi, T."",""Arstila, K."",""Leskel a, M."",""Ritala, M.""]]",[2007],"[""Chem. Mater.""]","[""T. Pilvi, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Mater. 19, 3387 (2007).""]" +,Sc(Cp)3,H2O,"SLG, Si",,250–350,,,,,682,[682],"[""""]","[""Novel ALD process for depositing CaF2 thin films""]","[[""Pilvi, T."",""Arstila, K."",""Leskel a, M."",""Ritala, M.""]]",[2007],"[""Chem. Mater.""]","[""T. Pilvi, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Mater. 19, 3387 (2007).""]" +,Sc(iPrAMD)3,H2O,H-Si,,290–360,,,,,683,[683],"[""""]","[""Surface-controlled deposition of Sc _2 O _3 thin films by atomic layer epitaxy using eta -diketonate and organometallic precursors""]","[[""M. Putkonen"",""M. Nieminen"",""J. Niinist o"",""L. Niinist o""]]",[2001],"[""Chem. Mater.""]","[""M. Putkonen, M. Nieminen, J. Niinist€o, and L. Niinist€o, Chem. Mater. 13, 4701 (2001).""]" +TiO2,,,,Amorphous,Anatase,Orthorhombic,Rutile,,,,[],[],[],[],[],[],[] +,TiF4,H2O,borosilicate,,300–500,,,,,687,[687],"[""""]","[""Growth kinetics and initial stage of growth during plasma-enhanced Ti atomic layer deposition""]","[[""H. Kim"",""S. M. Rossnagel""]]",[2002],"[""J. Vac. Sci. Technol., A""]","[""H. Kim and S. M. Rossnagel, J. Vac. Sci. Technol. A 20, 802 (2002).""]" +,TiF4,H2O,SLG,,300–400,,400–500,,,687,[687],"[""""]","[""Growth kinetics and initial stage of growth during plasma-enhanced Ti atomic layer deposition""]","[[""H. Kim"",""S. M. Rossnagel""]]",[2002],"[""J. Vac. Sci. Technol., A""]","[""H. Kim and S. M. Rossnagel, J. Vac. Sci. Technol. A 20, 802 (2002).""]" +,TiCl4,H2O,"Si, H-Si, Ge, GaAs,ZnO, SiO2, Al2O3, glass, PC, PS, MWCNT, Ni, Mo, Ti, Ta, Pt",25–600,125–680,,275–680,,,"44, 94, 128, 207, 365, 719, 720, 722–724, 727, 737, 738, 742, 744, 746–749, 753, 756, 758–760, 762, 767, 769, 770, 773, 775–778, 780–782, 785, 786, 788–790, 795, 800, 801, 803, 805, 806, 808, 809, 814, 1011, and 2311–2313","[44,94,128,207,365,719,720,722,723,724,727,737,738,742,744,746,747,748,749,753,756,758,759,760,762,767,769,770,773,775,776,777,778,780,781,782,785,786,788,789,790,795,800,801,803,805,806,808,809,814,1011,2311,2312,2313]","[""10.1039/b923490j"","""","""","""",""10.1016/j.apsusc.2010.03.047"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1088/0957-4484/19/44/445604"",""DOI: 10.1016/j.tsf.2008.04.052"",""10.1557/JMR.2008.0297"",""10.1134/S107042720812001X"",""10.1016/j.tsf.2009.05.001"",""10.1149/1.3138723"",""10.1134/S1063783409030093"",""10.1063/1.3454908"",""10.1088/0957-4484/21/3/035301"",""10.1016/j.tsf.2009.09.010"",""10.1021/jp911210q"",""10.1088/0957-4484/21/22/225602"",""10.1149/1.3313344"","""","""","""","""",""""]","[""Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition"",""Surface modification of thermoplastics by atomic layer deposition of Al2O3 and TiO2 thin films"",""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Atomic layer deposition of TiO2 and Al2O3 thin films and nanolaminates"",""Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition"",""Interaction of Titanium Tetrachloride with Products of Thermal Decomposition of Basic Magnesium Carbonate"",""Ultra-thin TiO _2 films by a novel method"",""An IR and NMR study of the chemisorption of TiCl _4 on silica"",""Analytical and chemical techniques in the study of surface species in atomic layer epitaxy"",""Dispersion and distribution of titanium species bound to silica from TiCl _4"",""Surface coverage of ALE precursors on oxides"",""Processing of catalysts by atomic layer epitaxy: modification of supports"",""Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection"",""Composition and thickness determination of thin oxide films: comparison of different programs and methods"",""Grazing-incidence SAXS/WAXD on nanosized TiO _2 films obtained by ALE"",""In situ quadrupole mass spectrometry and quartz crystal microbalance studies on the atomic layer deposition of titanium dioxide from titanium tetrachloride and water"",""Atomic layer deposition of titanium dioxide from TiCl _4 and H _2 O : investigation of growth mechanism"",""Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO _2 and SnO _2"",""Atomic layer growth of epitaxial TiO _2 thin films from TiCl _4 and H _2 O on - Al _2 O _3 substrates"",""TiO _2 atomic layer deposition on ZrO _2 particles using alternate exposures of TiCl _4 and H _2 O"",""Role of Water in the Atomic Layer Deposition of TiO _2 on SiO _2"",""Characterisation of epitaxial TiO2 thin films grown on MgO(001) using atomic layer deposition"",""Atomic layer deposition in porous structures: 3D photonic crystals"",""TiO2 inverse opals fabricated using low-temperature atomic layer deposition"",""Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2-TiO2 gate dielectrics"",""Atomic layer deposition of TiO2-xNx thin films for photocatalytic applications"",""Atomic layer deposition of TiO2 on mesoporous silica"",""Controlled pore structure modification of diatoms by atomic layer deposition of TiO2"",""Refractive index gradients in TiO2 thin films grown by atomic layer deposition"",""Photonic band tuning in two-dimensional photonic crystal slab waveguides by atomic layer deposition"",""H2S modified atomic layer deposition process for photocatalytic TiO2 thin films"",""Enhanced adhesion of atomic layer deposited titania on polycarbonate substrates"",""ZnO-TiO2 core-shell nanorod/P3HT solar cells"","""",""Free-standing porous anodic alumina templates for atomic layer deposition of highly ordered TiO2 nanotube arrays on various substrates"",""Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates"",""Atomic layer deposition of TiO2 nanostructures for self-cleaning applications"",""Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition"",""Amorphous to anatase transformation in atomic layer deposited titania thin films induced by hydrothermal treatment at 120 degrees C"",""Effect of the Substrate Nature on the Formation of Thin Titanium Dioxide Films by Molecular Layering"",""Titanium dioxide thin films, their structure and its effect on their photoactivity and photocatalytic properties"",""Substrate Materials and Deposition Temperature Dependent Growth Characteristics and Photocatalytic Properties of ALD TiO2 Films"",""Phase transformations in titanium dioxide thin films during chemical synthesis under strongly nonequilibrium conditions"",""TiO2-coated carbon nanotubes: A redshift enhanced photocatalysis at visible light"",""Ta2O5- and TiO2-based nanostructures made by atomic layer deposition"",""Low temperature atomic layer deposition of titania thin films"",""Space-Limited Crystal Growth Mechanism of TiO2 Films by Atomic Layer Deposition"",""Direct probe of heterojunction effects upon photoconductive properties of TiO2 nanotubes fabricated by atomic layer deposition"",""Enhancement of Photoelectrochemical Properties of ALD TiO2 Films by Light-Trapping Effect"",""Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide films"",""Atomic layer deposition for the conformal coating of nanoporous materials"",""Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition"",""Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx"",""Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge""]","[[""Aaltonen, Titta"",""Alnes, Mari"",""Nilsen, Ola"",""Costelle, Leila"",""Fjellv g, Helmer""],[""Kemell, Marianna"",""F arm, Elina"",""Ritala, Mikko"",""Leskel a, Markku""],[""R. Matero"",""A. Rahtu"",""M. Ritala"",""M. Leskela"",""T. Sajavaara""],[""Mitchell, D. R. G."",""Triani, G."",""Attard, D. J."",""Finnie, K. S."",""Evans, P. J."",""Barb e, C. J."",""Bartlett, J. R.""],[""Sun, Edward"",""Su, Fu-Hsiang"",""Chen, Ching-Huang"",""Chen, Miin-Jang""],[""S. A. Morozov"",""A. A. Malkov"",""A. A. Malygin""],[""S. B. Desu""],[""S. Haukka"",""E.-L. Lakomaa"",""A. Root""],[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""],[""S. Haukka"",""E.-L. Lakomaa"",""O. Jylha"",""J. Vilhunen"",""S. Hornytzkyj""],[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""],[""M. Lindblad"",""S. Haukka"",""A. Kyt okivi"",""E.-L. Lakomaa"",""A. Rautiainen"",""T. Suntola""],[""A. Rosental"",""P. Adamson"",""A. Gerst"",""H. Koppel"",""A. Tarre""],[""V. Sammelselg"",""J. Aarik"",""A. Aidla"",""A. Kasikov"",""E. Heikinheimo"",""M. Peussa"",""L. Niinist o""],[""A. Turkovi c""],[""R. Matero"",""A. Rahtu"",""M. Ritala""],[""J. Aarik"",""A. Aidla"",""H. Mandar"",""T. Uustare""],[""A. Tarre"",""A. Rosental"",""V. Sammelselg"",""T. Uustare""],[""J. Aarik"",""A. Aidla"",""H. M andar"",""T. Uustare"",""M. Schuisky"",""A. H rsta""],[""J. D. Ferguson"",""A. R. Yoder"",""A. W. Weimer"",""S. M. George""],[""W. Gu"",""C. P. Tripp""],[""Mitchell, D. R. G."",""Attard, D. J."",""Triani, G.""],[""King, J. S."",""Heineman, D."",""Graugnard, E."",""Summers, C. J.""],[""King, J. S."",""Graugnard, E."",""Summers, C. J.""],[""Triyoso, D. H."",""Hegde, R. I."",""Wang, X. D."",""Stoker, M. W."",""Rai, R."",""Ramon, M. E."",""White, B. E."",""Tobin, P. J.""],[""Pore, V."",""Heikkil a, M."",""Ritala, M."",""Leskel a, M."",""Areva, S.""],[""Mahurin, S."",""Bao, L. L."",""Yan, W. F."",""Liang, C. D."",""Dai, S.""],[""Losic, D."",""Triani, G."",""Evans, P. J."",""Atanacio, A."",""Mitchell, J. G."",""Voelcker, N. H.""],[""Kasikov, A."",""Aarik, J."",""M andar, H."",""Moppel, M."",""P ars, M."",""Uustare, T.""],[""Graugnard, E."",""Gaillot, D. P."",""Dunham, S. N."",""Neff, C. W."",""Yamashita, T."",""Summers, C. J.""],[""Pore, V."",""Ritala, M."",""Leskel a, M."",""Areva, S."",""J arn, M."",""J arnstr om, J.""],[""Latella, B. A."",""Triani, G."",""Zhang, Z."",""Short, K. T."",""Bartlett, J. R."",""Ignat, M.""],[""Greene, L. E."",""Law, M."",""Yuhas, B. D."",""Yang, P. D.""],[],[""Tan, L. K."",""Chong, M. A. S."",""Gao, H.""],[""J ogi, I."",""P ars, M."",""Aarik, J."",""Aidla, A."",""Laan, M."",""Sundqvist, J."",""Oberbeck, L."",""Heitmann, J."",""Kukli, K.""],[""Ng, Charlene J. W."",""Gao, Han"",""Tan, Timothy Thatt Yang""],[""D.R.G. Mitchell"",""G. Triani"",""Z. Zhang""],[""Zhang, Zhaoming"",""Triani, Gerry"",""Fan, Liang-Jen""],[""Antipov, V. V."",""Belyaev, A. P."",""Malygin, A. A."",""Rubets, V. P."",""Sosnov, E. A.""],[""K a ari ainen, M.-L."",""K a ari ainen, T. O."",""Cameron, D. C.""],[""Cheng, Hsyi-En"",""Hsu, Ching-Ming"",""Chen, Yi-Chih""],[""Belyaev, A. P."",""Malygin, A. A."",""Antipov, V. V."",""Rubets, V. P.""],[""Lu, Sheng-Yi"",""Tang, Chiung-Wen"",""Lin, Yu-Hsien"",""Kuo, Hsin-Fu"",""Lai, Yao-Cheng"",""Tsai, Meng-Yen"",""Ouyang, Hao"",""Hsu, Wen-Kuang""],[""Kemell, Marianna"",""H ark onen, Emma"",""Pore, Viljami"",""Ritala, Mikko"",""Leskel a, Markku""],[""Triani, G."",""Campbell, J. A."",""Evans, P. J."",""Davis, J."",""Latella, B. A."",""Burford, R. P.""],[""Lee, Wen-Jen"",""Hon, Min-Hsiung""],[""Chang, Yung-Huang"",""Liu, Chien-Min"",""Tseng, Yuan-Chieh"",""Chen, Chih"",""Chen, Chia-Chuan"",""Cheng, Hsyi-En""],[""Cheng, Hsyi-En"",""Hsiao, S. H."",""Lu, Deng-Maw""],[""Riikka L. Puurunen"",""Timo Sajavaara"",""Eero Santala"",""Ville Miikkulainen"",""Tapio Saukkonen"",""Mikko Laitinen"",""Markku Leskel a""],[""Elam, J. W."",""Xiong, G."",""Han, C. Y."",""Wang, H. H."",""Birrell, J. P."",""Welp, U."",""Hryn, J. N."",""Pellin, M. J."",""Baumann, T. F."",""Poco, J. F."",""Satcher, J. H.""],[""Avice, M."",""Grossner, U."",""Pintilie, I."",""Svensson, B. 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Lett. 92, 252902 (2008).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_030_table_021/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_030_table_021/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..14ee58f708b7c5a8da80d3b73c898cf9cbe2c37a --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_030_table_021/gold.csv @@ -0,0 +1,23 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,TiCl4,H2O,RuO2,150,,,275–600,,,780 and 799,"[780,799]","["""",""10.1116/1.3021030""]","["""",""Epitaxial growth of high-kappa TiO2 rutile films on RuO2 electrodes""]","[[],[""Fr ohlich, K."",""Aarik, J."",""Tapajna, M."",""Rosov a, A."",""Aidla, A."",""Dobro cka, E."",""Hu skov a, K.""]]","[null,2009]","["""",""J. Vac. Sci. Technol., B""]","[""K. 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Sammelselg, A. Tarre, J. Lu, J. Aarik, A. Niilisk, T. Uustare, I. Net\u0004sipailo, R. Rammula, R. P€arna, and A. Rosental, Surf. Coat. Technol. 204, 2015 (2010).""]" +,TiCl4,MeOH,Al2O3,,,,375,,,817,[817],"[""10.1016/j.surfcoat.2009.11.039""]","[""Structural characterization of TiO2-Cr2O3 nanolaminates grown by atomic layer deposition""]","[[""Sammelselg, V."",""Tarre, A."",""Lu, J."",""Aarik, J."",""Niilisk, A."",""Uustare, T."",""Netsipailo, I."",""Rammula, R."",""P arna, R."",""Rosental, A.""]]",[2010],"[""Surf. Coat. Technol.""]","[""V. Sammelselg, A. Tarre, J. Lu, J. Aarik, A. Niilisk, T. Uustare, I. Net\u0004sipailo, R. Rammula, R. P€arna, and A. Rosental, Surf. Coat. Technol. 204, 2015 (2010).""]" +,TiCl4,O2⚡,H-Si,,110–200,,,,,818 and 819,"[818,819]","[""10.1021/jp907266c"",""DOI: 10.1016/j.tsf.2010.05.128""]","[""Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4"",""Self-limiting growth of anatase TiO2: A comparison of two deposition techniques""]","[[""Kubala, Nicholas G."",""Rowlette, Pieter C."",""Wolden, Colin A.""],[""Nicholas G. Kubala"",""Colin A. Wolden""]]","[2009,2010]","[""J. Phys. Chem. C"",""Thin Solid Films""]","[""N. G. Kubala, P. C. Rowlette, and C. A. Wolden, J. Phys. Chem. C 113, 16307 (2009)."",""N. G. Kubala and C. A. Wolden, Thin Solid Films 518, 6733 (2010).""]" +,TiI4,H2O2,"Si, Al2O3e, SiO2, SLG",135,165–375,,300–490,,,"820, 823, and 824","[820,823,824]","["""","""",""""]","[""Atomic layer deposition of TiO _2 thin films from TiI _4 and H _2 O"",""Atomic Layer Deposition of Titanium Oxide from TiI _4 and H _2 O _2"",""Real-Time Monitoring in Atomic Layer Deposition of TiO _2 from TiI _4 and H _2 O--H _2 O _2""]","[[""J. Aarik"",""A. Aidla"",""T. Uustare"",""K. Kukli"",""V. Sammelselg"",""M. Ritala"",""M. Leskel a""],[""K. Kukli"",""M. Ritala"",""M. Schusky"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""T. Uustare"",""A. H rsta""],[""K. Kukli"",""A. Aidla"",""J. Aarik"",""M. Schuisky"",""A. H rsta"",""M. Ritala"",""M. Leskel a""]]","[2002,2000,2000]","[""Appl. Surf. Sci."",""Chem. Vap. Deposition"",""Langmuir""]","[""J. Aarik, A. Aidla, T. Uustare, K. Kukli, V. Sammelselg, M. Ritala, and M. Leskel€a, Appl. Surf. Sci. 193, 277 (2002)."",""K. Kukli, M. Ritala, M. Schusky, M. Leskel€a, T. Sajavaara, J. Keinonen, T. Uustare, and A. Ha˚rsta, Chem. Vap. Deposition 6, 303 (2000)."",""K. Kukli, A. Aidla, J. Aarik, M. Schuisky, A. Ha˚rsta, M. Ritala, and M. Leskel€a, Langmuir 16, 8122 (2000).""]" +,TiI4,H2O,"Si, Al2O3e, SiO2, AAO, CNS",135,165–375,,445,,,820–822 and 824,"[820,821,822,824]","["""",""10.1063/1.3245395"",""10.1016/j.jcrysgro.2008.10.035"",""""]","[""Atomic layer deposition of TiO _2 thin films from TiI _4 and H _2 O"",""Template-based multiwalled TiO2/iron oxides nanotubes: Structure and magnetic properties"",""Atomic layer deposition of titanium dioxide nanostructures using carbon nanosheets as a template"",""Real-Time Monitoring in Atomic Layer Deposition of TiO _2 from TiI _4 and H _2 O--H _2 O _2""]","[[""J. Aarik"",""A. Aidla"",""T. Uustare"",""K. Kukli"",""V. Sammelselg"",""M. Ritala"",""M. Leskel a""],[""Soroka, I. L."",""Rooth, M."",""Lu, Jun"",""Boman, M."",""Svedlindh, P."",""Carlsson, J. -O."",""H rsta, A.""],[""Rooth, Marten"",""Quinlan, Ronald A."",""Widenkvist, Erika"",""Lu, Jun"",""Grennberg, Helena"",""Holloway, Brian C."",""H rsta, Anders"",""Jansson, Ulf""],[""K. Kukli"",""A. Aidla"",""J. Aarik"",""M. Schuisky"",""A. H rsta"",""M. Ritala"",""M. Leskel a""]]","[2002,2009,2009,2000]","[""Appl. Surf. Sci."",""J. Appl. Phys."",""J. Cryst. Growth"",""Langmuir""]","[""J. Aarik, A. Aidla, T. Uustare, K. Kukli, V. Sammelselg, M. Ritala, and M. Leskel€a, Appl. Surf. Sci. 193, 277 (2002)."",""I. L. Soroka, M. Rooth, J. Lu, M. Boman, P. Svedlindh, J. O. Carlsson, and A. Ha˚rsta, J. Appl. Phys. 106, 084313 (2009)."",""M. Rooth, R. A. Quinlan, E. Widenkvist, J. Lu, H. Grennberg, B. C. Holloway, A. Ha˚rsta, and U. Jansson, J. Cryst. Growth 311, 373 (2009)."",""K. Kukli, A. Aidla, J. Aarik, M. Schuisky, A. Ha˚rsta, M. Ritala, and M. Leskel€a, Langmuir 16, 8122 (2000).""]" +,TiI4,O2,H-Si,,235–457,,457,,,826,[826],"[""""]","[""Atomic layer deposition of thin films using O _2 as oxygen source""]","[[""M. Schuisky"",""J. Aarik"",""K. Kukli"",""A. Aidla"",""A. H rsta""]]",[2001],"[""Langmuir""]","[""M. Schuisky, J. Aarik, K. Kukli, A. Aidla, and A. Ha˚rsta, Langmuir 17, 5508 (2001).""]" +,TiI4,O2,Al2O3e,,,,300–455,,,827,[827],"[""""]","[""Epitaxial growth of TiO _2 films in a hydroxyl-free atomic layer deposition process""]","[[""M. Schuisky"",""K. Kukli"",""J. Aarik"",""J. Lu"",""A. H rsta""]]",[2002],"[""J. Cryst. Growth""]","[""M. Schuisky, K. Kukli, J. Aarik, J. Lu, and A. Ha˚rsta, J. Cryst. Growth 235, 293 (2002).""]" +,TiI4,O2,MgOe,,375–455,,,,,827,[827],"[""""]","[""Epitaxial growth of TiO _2 films in a hydroxyl-free atomic layer deposition process""]","[[""M. Schuisky"",""K. Kukli"",""J. Aarik"",""J. Lu"",""A. H rsta""]]",[2002],"[""J. Cryst. Growth""]","[""M. Schuisky, K. Kukli, J. Aarik, J. Lu, and A. Ha˚rsta, J. Cryst. Growth 235, 293 (2002).""]" +,Ti(CpMe5)(OMe)3,O3,Ru,280,,,280,,,828,[828],"[""10.1021/jp907940u""]","[""Atomic Layer Deposition of Titanium Dioxide Thin Films from Cp * Ti(OMe)(3) and Ozone""]","[[""Rose, Martin"",""Niinist o, Jaakko"",""Michalowski, Pawel"",""Gerlich, Lukas"",""Wilde, Lutz"",""Endler, Ingolf"",""Bartha, Johann W.""]]",[2009],"[""J. Phys. Chem. C""]","[""M. Rose, J. Niinist€o, P. Michalowski, L. Gerlich, L. Wilde, I. Endler, and J. W. Bartha, J. Phys. Chem. C 113, 21825 (2009).""]" +,Ti(CpMe5)(OMe)3,O3,TiN,,280,,,,,828,[828],"[""10.1021/jp907940u""]","[""Atomic Layer Deposition of Titanium Dioxide Thin Films from Cp * Ti(OMe)(3) and Ozone""]","[[""Rose, Martin"",""Niinist o, Jaakko"",""Michalowski, Pawel"",""Gerlich, Lukas"",""Wilde, Lutz"",""Endler, Ingolf"",""Bartha, Johann W.""]]",[2009],"[""J. Phys. Chem. C""]","[""M. Rose, J. Niinist€o, P. Michalowski, L. Gerlich, L. Wilde, I. Endler, and J. W. Bartha, J. Phys. Chem. C 113, 21825 (2009).""]" +,Ti(OMe)4,H2O,"Glass, Ni, Si, Ti",200–300,250–350,,,,,"830, 834, 836, and 837","[830,834,836,837]","["""","""",""10.1016/j.jphotochem.2009.03.019"",""DOI: 10.1016/j.apsusc.2010.06.061""]","[""Atomic Layer Deposition of Photocatalytic TiO _2 Thin Films from Titanium Tetramethoxide and Water"",""Atomic layer deposition of nanostructured TiO2 photocatalysts via template approach"",""Effect of thickness of ALD grown TiO2 films on photoelectrocatalysis"",""Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles""]","[[""V. Pore"",""A. Rahtu"",""M. Leskel a"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen""],[""Kemell, M."",""Pore, V."",""Tupala, J."",""Ritala, M."",""Leskel a, M.""],[""Heikkil a, Mikko"",""Puukilainen, Esa"",""Ritala, Mikko"",""Leskel a, Markku""],[""A.P. Alekhin"",""S.A. Gudkova"",""A.M. Markeev"",""A.S. Mitiaev"",""A.A. Sigarev"",""V.F. 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Sci. 257, 186 (2010).""]" +,Ti(OEt)4,H2O,"Si, H-Si, SiO2, SLG, paper, Mo, Ti",100–300,180–350,,,,,"128, 760, 773, 782, 831, 832, 837, 839–841, and 845","[128,760,773,782,831,832,837,839,840,841,845]","["""","""","""","""","""","""",""DOI: 10.1016/j.apsusc.2010.06.061"","""","""","""",""10.1134/S1027451010030043""]","[""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""TiO2 inverse opals fabricated using low-temperature atomic layer deposition"",""Refractive index gradients in TiO2 thin films grown by atomic layer deposition"",""Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates"",""Atomic layer deposition in nanometer-level replication of cellulosic substances and preparation of photocatalytic TiO2/cellulose composites"",""Ir/oxide/cellulose composites for catalytic purposes prepared by atomic layer deposition"",""Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles"",""Atomic layer epitaxy growth of titanium dioxide thin films from titanium ethoxide"",""Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water"",""Influence of structure development on atomic layer deposition of TiO _2 thin films"",""Atomic layer deposition of titanium dioxide thin films from tetraethoxytitanium and water""]","[[""R. 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Sigarev, and V. Toknova, Appl. Surf. Sci. 257, 186 (2010)."",""M. Ritala, M. Leskel€a, and E. Rauhala, Chem. Mater. 6, 556 (1994)."",""J. Aarik, A. Aidla, V. Sammelselg, T. Uustare, M. Ritala, and M. Leskel€a, Thin Solid Films 370, 163 (2000)."",""J. Aarik, J. Karlis, H. M€andar, T. Uustare, and V. Sammelselg, Appl. Surf. Sci. 181, 339 (2001)."",""A. P. Alekhin, G. I. Lapushkin, A. M. Markeev, A. A. Sigarev, and V. F. Toknova, J. Surf. Invest. 4, 379 (2010).""]" +,Ti(OEt)4,H2O2,"H-Si, Mo",125–175,225–350,,,,,773 and 782,"[773,782]","["""",""""]","[""Refractive index gradients in TiO2 thin films grown by atomic layer deposition"",""Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates""]","[[""Kasikov, A."",""Aarik, J."",""M andar, H."",""Moppel, M."",""P ars, M."",""Uustare, T.""],[""J ogi, I."",""P ars, M."",""Aarik, J."",""Aidla, A."",""Laan, M."",""Sundqvist, J."",""Oberbeck, L."",""Heitmann, J."",""Kukli, K.""]]","[2006,2008]","[""J. Phys. D: Appl. Phys."",""Thin Solid Films""]","[""A. Kasikov, J. Aarik, H. M€andar, M. Moppel, M. P€ars, and T. Uustare, J. Phys. D: Appl. Phys. 39, 54 (2006)."",""I. J~ogi, M. P€ars, J. Aarik, A. Aidla, M. Laan, J. Sundqvist, L. Oberbeck, J. Heitmann, and K. Kukli, Thin Solid Films 516, 4855 (2008).""]" +,Ti(OiPr)4,H2O,"Si, SiO2, Glass, PC, PVP, Al2O3, ZnO, SS, Ru, Pt, CrN, TiSi2, CNC",50–225,150–350,,,,,"128, 273, 328, 362, 788, 846–848, 850, 852, 855, 856, 859–861, 864–868, 870, 875, 877, 881, 914, and 2314","[128,273,328,362,788,846,847,848,850,852,855,856,859,860,861,864,865,866,867,868,870,875,877,881,914,2314]","["""","""",""10.1021/la900113e"",""10.1088/0953-8984/22/15/155401"",""10.1557/JMR.2008.0297"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1021/ja808426h"",""10.1021/nn800681q"",""10.1016/j.elecom.2009.11.026"","""",""""]","[""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Template-directed gas-phase fabrication of oxide nanotubes"",""Toward Plasmonic Solar Cells: Protection of Silver Nanoparticles via Atomic Layer Deposition of TiO2"",""Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition"",""Amorphous to anatase transformation in atomic layer deposited titania thin films induced by hydrothermal treatment at 120 degrees C"",""TiO _2 THIN-FILMS PREPARED BY PULSED-BEAM CHEMICAL VAPOR-DEPOSITION FROM TITANIUM TETRAISOPROPOXIDE AND WATER"",""TITANIUM ISOPROPOXIDE AS A PRECURSOR IN ATOMIC LAYER EPITAXY OF TITANIUM-DIOXIDE THIN-FILMS"",""Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process"",""Formation of TiO _2 and ZrO _2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness"",""Fabrication of oxide/semiconducting coaxial nanotubular materials using atomic layer deposition"",""Atomic Layer Deposition of Titanium Oxide on Self-Assembled-Monolayer-Coated Gold"",""Growth characteristics of atomic layer deposited TiO2 thin films on Ru and Si electrodes for memory capacitor applications"",""Transformation of the crystalline structure of an ALD TiO2 film on a Ru electrode by O-3 pretreatment"",""Liquid injection atomic layer deposition of TiOx films using Ti[OCH(CH3)(2)](4)"",""Zirconium doping in titanium oxide photocatalytic films prepared by atomic layer deposition"",""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition"",""Improvement in corrosion resistance of CrN coated stainless steel by conformal TiO _2 deposition"",""Corrosion resistance of TiO _2 films grown on stainless steel by atomic layer deposition"",""Atomic layer deposition of TiO _2 films on particles in a fluidized bed reactor"",""Nanostructured Pure Anatase Titania Tubes Replicated from Electrospun Polymer Fiber Templates by Atomic Layer Deposition"",""Atomic layer deposition of TiO2 on aerogel templates: New photoanodes for dye-sensitized solar cells"",""TiO2/TiSi2 Heterostructures for High-Efficiency Photoelectrochemical H2O Splitting"",""Multitwinned Spinel Nanowires by Assembly of Nanobricks via Oriented Attachment: A Case Study of Zn2TiO4"",""Atomic layer deposition of TiO2 nanotubes and its improved electrostatic capacitance"",""Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O"",""Visible light activity of nitrogen-doped TiO2 thin films grown by atomic layer deposition""]","[[""R. Matero"",""A. Rahtu"",""M. Ritala"",""M. Leskela"",""T. Sajavaara""],[""Bae, C. D."",""Kim, S. Y."",""Ahn, B. Y."",""Kim, J. Y."",""Sung, M. M."",""Shin, H. J.""],[""Standridge, Stacey D."",""Schatz, George C."",""Hupp, Joseph T.""],[""Scarel, Giovanna"",""Na, Jeong-Seok"",""Parsons, Gregory N.""],[""Zhang, Zhaoming"",""Triani, Gerry"",""Fan, Liang-Jen""],[""H. D oring"",""K. Hashimoto"",""A. Fujushima""],[""M. Ritala"",""M. Leskel a"",""L. Niinist o"",""P. Haussalo""],[""J. Aarik"",""A. Aidla"",""T. Uustare"",""M. Ritala"",""M. Leskel a""],[""H. Shin"",""D.-K. Jeong"",""J. Lee"",""M. M. Sung"",""J. Kim""],[""D. K. Jeong"",""N. H. Park"",""S. H. Jung"",""W. G. Jung"",""H. Shin"",""J. G. Lee"",""J. Y. Kim""],[""Seo, E.K."",""Lee, J.W."",""Sung-Suh, H.M."",""Sung, M.M.""],[""Kim, W. D."",""Hwang, G. W."",""Kwon, O. S."",""Kim, S. K."",""Cho, M."",""Jeong, D. S."",""Lee, S. W."",""Seo, M. H."",""Hwang, C. S."",""Min, Y. S."",""Cho, Y. J.""],[""Kim, S. K."",""Hwang, G. W."",""Kim, W. D."",""Hwang, C. S.""],[""Watanabe, T."",""Hoffmann-Eifert, S."",""Yang, L."",""Rudiger, A."",""Kugeler, C."",""Hwang, C. S."",""Waser, R.""],[""Qiu, S. H."",""Starr, T. L.""],[""Xie, Q."",""Musschoot, J."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Detavernier, C."",""Van den Berghe, S."",""Jiang, Y. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""C.X. Shan"",""Xianghui Hou"",""Kwang-Leong Choy"",""Patrick Choquet""],[""C.X. Shan"",""Xianghui Hou"",""Kwang-Leong Choy""],[""David M. King"",""Xinhua Liang"",""Yun Zhou"",""Casey S. Carney"",""Luis F. Hakim"",""Peng Li"",""Alan W. Weimer""],[""Kim, G.-M."",""Lee, S.-M."",""Michler, G. H."",""Roggendorf, H."",""G osele, U."",""Knez, M.""],[""Hamann, T. W."",""Martinson, A. B. F."",""Elam, J. W."",""Pellin, M. J."",""Hupp, J. T.""],[""Lin, Yongjing"",""Zhou, Sa"",""Liu, Xiaohua"",""Sheehan, Stafford"",""Wang, Dunwei""],[""Yang, Yang"",""Scholz, Roland"",""Fan, Hong Jin"",""Hesse, Dietrich"",""G osele, Ulrich"",""Zacharias, Margit""],[""Lee, Jongmin"",""Ju, HyungKuk"",""Lee, Jae Kwang"",""Kim, Ho Sung"",""Lee, Jaeyoung""],[""Xie, Q."",""Jiang, Y. L."",""Detavernier, C."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""Cheng, H. E."",""Lee, W. J."",""Hsu, C. M."",""Hon, M. H."",""Huang, C. L.""]]","[2000,2008,2009,2010,2008,1992,1993,2000,2004,2004,2004,2005,2006,2007,2007,2008,2008,2008,2008,2008,2008,2009,2009,2010,2007,2008]","[""Thin Solid Films"",""J. Mater. Chem."",""Langmuir"",""J. Phys.: Condens. Matter"",""J. Mater. Res."",""Ber. Bunsen-Ges. Phys. Chem"",""Chem. Mater."",""Appl. Surf. Sci."",""Adv. Mater."",""Mater. Sci. Forum"",""Chem. Mater."",""J. Electrochem. Soc."",""Electrochem. Solid-State Lett."",""J. Electrochem. Soc."",""J. Electrochem. 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Solid-State Lett. 11, D81 (2008).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_031_table_022/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_031_table_022/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..4a98146ee237a6e5d4bac88ce8be9364b5ce20cb --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_031_table_022/gold.csv @@ -0,0 +1,28 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Ti(OiPr)4,H2O,"RuO2, ISM",70–160,225–300,,225–300,,,318 and 859,"[318,859]","[""10.1039/b820436e"",""""]","[""Low-temperature ZnO atomic layer deposition on biotemplates: flexible photocatalytic ZnO structures from eggshell membranes"",""Transformation of the crystalline structure of an ALD TiO2 film on a Ru electrode by O-3 pretreatment""]","[[""Lee, Seung-Mo"",""Grass, Gregor"",""Kim, Gyeong-Man"",""Dresbach, Christian"",""Zhang, Lianbing"",""G osele, Ulrich"",""Knez, Mato""],[""Kim, S. 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Leskel a""],[""Liang, Xinhua"",""King, David M."",""Li, Peng"",""Weimer, Alan W.""]]","[2009,2000,2009]","[""Ind. Eng. Chem. Res."",""Appl. Surf. Sci."",""J. Am. Ceram. Soc.""]","[""D. M. King, Y. Zhou, L. F. Hakim, X. Liang, P. Li, and A. W. Weimer, Ind. Eng. Chem. Res. 48, 352 (2009)."",""J. Aarik, A. Aidla, T. Uustare, M. Ritala, and M. Leskel€a, Appl. Surf. Sci. 161, 385 (2000)."",""X. Liang, D. M. King, P. Li, and A. W. Weimer, J. Am. Ceram. Soc. 92, 649 (2009).""]" +,Ti(OiPr)4,O2,silica,100–165,,,,,,736 and 884,"[736,884]","["""",""""]","[""Effects of HCl readsorption on film growth in atomic layer CVD of TiO _2"",""Controlled coating of high surface area silica with titania overlayers by atomic layer deposition""]","[[""H. Siimon"",""J. Aarik"",""T. Uustare""],[""J. Keranen"",""E. Iiskola"",""C. Guimon"",""A. Auroux"",""L. Niinisto""]]","[1997,2002]","[""Proceedings of the fourteenth international conference of Chemical Vapor Deposition and EUROCVD-11"",""Proceedings of the 8th International Symposium \""Scientific Bases for the Preparation of Heterogeneous Catalysts,\"" Louvain-la-Neuve, Belgium, September 9-12, 2002""]","[""H. Siimon, J. Aarik, and T. Uustare, in Proceedings of the Fourteenth International Conference of Chemical Vapor Deposition and EUROCVD-11, Electrochem. Soc. Proceedings, edited by M. D. Allendorf and C. Bernard (Electrochemical Society, Pennington, New Jersey, USA, 1997), Vol. 97-25, pp. 131–138."",""J. Ker€anen, E. Iiskola, C. Guimon, A. Auroux, and L. Niinist€o, in Proceedings of the 8th International Symposium on Scientific Bases for the Preparation of Heterogeneous Catalysts, Louvain-la-Neuve, Belgium, 9-12 September 2002, Stud. Surf. Sci. Catal., edited by E. Gaigneaux, D. E. De Vos, P. Grange, P. A. Jacobs, J. A. Martens, P. Ruiz, and G. Poncelet (Elsevier, Amsterdam, 2002), Vol. 143, pp. 777–785.""]" +,Ti(OiPr)4,O3,"Si, Pt",,250,,,,,899 and 1612,"[899,1612]","["""",""""]","[""High dielectric constant TiO _2 thin films on a Ru electrode grown at 250 ^irc C by atomic-layer deposition"",""Impact of deposition processes on properties of atomic-layer-deposited hafnium zirconate high-k dielectrics""]","[[""S. K. Kim"",""W.-D. Kim"",""K.-M. Kim"",""C. S. Hwang"",""J. Jeong""],[""Triyoso, D. H."",""Hegde, R. I."",""Gregory, R.""]]","[2004,2007]","[""Appl. Phys. Lett."",""Electrochem. Solid-State Lett.""]","[""S. K. Kim, W.-D. Kim, K.-M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett. 85, 4112 (2004)."",""D. H. Triyoso, R. I. Hegde, and R. Gregory, Electrochem. Solid-State Lett. 10, H354 (2007).""]" +,Ti(OiPr)4,O3,Ru,,,,250,,,"899, 900, 1612, and 2315","[899,900,1612,2315]","["""","""","""",""10.2166/wst.2009.660""]","[""High dielectric constant TiO _2 thin films on a Ru electrode grown at 250 ^irc C by atomic-layer deposition"",""Structurally and electrically uniform deposition of high-k TiO2 thin films on a Ru electrode in three-dimensional contact holes using atomic layer deposition"",""Impact of deposition processes on properties of atomic-layer-deposited hafnium zirconate high-k dielectrics"",""Atomic layer deposited (ALD) TiO2 and TiO2-x-N-x thin film photocatalysts in salicylic acid decomposition""]","[[""S. K. Kim"",""W.-D. Kim"",""K.-M. Kim"",""C. S. Hwang"",""J. Jeong""],[""Kim, S. K."",""Kim, K. M."",""Kwon, O. S."",""Lee, S. W."",""Jeon, C. B."",""Park, W. Y."",""Hwang, C. S."",""Jeong, J.""],[""Triyoso, D. H."",""Hegde, R. I."",""Gregory, R.""],[""Vilhunen, S. H."",""Sillanp a a, M. E. T.""]]","[2004,2005,2007,2009]","[""Appl. Phys. Lett."",""Electrochem. Solid-State Lett."",""Electrochem. Solid-State Lett."",""Water Sci. Technol.""]","[""S. K. Kim, W.-D. Kim, K.-M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett. 85, 4112 (2004)."",""S. K. Kim, K. M. Kim, O. S. Kwon, S. W. Lee, C. B. Jeon, W. Y. Park, C. S. Hwang, and J. Jeong, Electrochem. Solid-State Lett. 8, F59 (2005)."",""D. H. Triyoso, R. I. Hegde, and R. Gregory, Electrochem. Solid-State Lett. 10, H354 (2007)."",""S. H. Vilhunen and M. E. T. Sillanp€a€a, Water Sci. Technol. 60, 2471 (2009).""]" +,Ti(OiPr)4,O3,"Ru, TiN",,250,,250,,,906,[906],"[""10.1149/1.3125713""]","[""Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications""]","[[""Choi, Gyu-Jin"",""Kim, Seong Keun"",""Lee, Sang Young"",""Park, Woo Young"",""Seo, Minha"",""Choi, Byung Joon"",""Hwang, Cheol Seong""]]",[2009],"[""J. Electrochem. Soc.""]","[""G.-J. Choi, S. K. Kim, S. Y. Lee, W. Y. Park, M. Seo, B. J. Choi, and C. S. Hwang, J. Electrochem. Soc. 156, G71 (2009).""]" +,Ti(OiPr)4,O2⚡,"Si, SiNx, borosilicate, Pt, RuO2, PC, PP, wool",50–275,250–300,,,,,"439, 864, 885, 886, 891, and 892","[439,864,885,886,891,892]","["""","""","""","""",""10.1063/1.3075612"",""10.1149/1.3059060""]","[""Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition"",""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition"",""Low-Temperature ALD Growth of SrTiO _3 Thin Films from Sr eta -Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source"",""Radical enhanced atomic layer deposition of titanium dioxide"",""Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors"",""Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate""]","[[""Park, P. K."",""Cha, E. S."",""Kang, S. 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Soc."",""Electrochem. Solid-State Lett.""]","[""V. R. Rai and S. Agarwal, J. Phys. Chem. C 113, 12962 (2009)."",""G.-J. Choi, S. K. Kim, S.-J. Won, H. J. Kim, and C. S. Hwang, J. Electrochem. Soc. 156, G138 (2009)."",""D.-K. Joo, J.-S. Park, and S.-W. Kang, Electrochem. Solid-State Lett. 12, H77 (2009).""]" +,Ti(OiPr)4,O2⚡,IrO2,,,,250,,,892,[892],"[""10.1149/1.3059060""]","[""Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate""]","[[""Joo, Dae-Kwon"",""Park, Jin-Seong"",""Kang, Sang-Won""]]",[2009],"[""Electrochem. Solid-State Lett.""]","[""D.-K. Joo, J.-S. Park, and S.-W. Kang, Electrochem. Solid-State Lett. 12, H77 (2009).""]" +,Ti(OiPr)4,H2O⚡,Si,50–210,,,,,,864,[864],"[""""]","[""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition""]","[[""Xie, Q."",""Musschoot, J."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Detavernier, C."",""Van den Berghe, S."",""Jiang, Y. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""]]",[2008],"[""J. Electrochem. Soc.""]","[""Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J. Electrochem. Soc. 155, H688 (2008).""]" +,Ti(OiPr)4,N2O⚡,"Ru, Al2O3",,250–280,,250–280,,,890 and 907,"[890,907]","[""10.1149/1.3169516"",""10.1149/1.3269901""]","[""Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O-2 Reactants"",""Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas""]","[[""Choi, Gyu-Jin"",""Kim, Seong Keun"",""Won, Seok-Jun"",""Kim, Hyeong Joon"",""Hwang, Cheol Seong""],[""Won, Seok-Jun"",""Suh, Sungin"",""Lee, Sang Woon"",""Choi, Gyu-Jin"",""Hwang, Cheol Seong"",""Kim, Hyeong Joon""]]","[2009,2010]","[""J. Electrochem. Soc."",""Electrochem. Solid-State Lett.""]","[""G.-J. Choi, S. K. Kim, S.-J. Won, H. J. Kim, and C. S. Hwang, J. Electrochem. Soc. 156, G138 (2009)."",""S.-J. Won, S. Suh, S. W. Lee, G.-J. Choi, C. S. Hwang, and H. J. Kim, Electrochem. Solid-State Lett. 13, G13 (2010).""]" +,Ti(OiPr)4,HCOOH,"Si, SrTiO3, LaAlO3, MgO, wool, cellulose, latex, CNT",150–200,,,,,,908,[908],"[""""]","[""Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition""]","[[""Erwan Rauwel"",""Guylhaine Clavel"",""Marc-Georg Willinger"",""Protima Rauwel"",""Nicola Pinna""]]",[2008],"[""Angew. Chem., Int. Ed.""]","[""E. Rauwel, G. Clavel, M.-G. Willinger, P. Rauwel, and N. Pinna, Angew. Chem., Int. Ed. 47, 3592 (2008).""]" +,Ti(OiPr)4,CH3COOH,"Si, SrTiO3, LaAlO3, MgO, wool, cellulose, latex, CNT",150–200,,,,,,908–911,"[908,909,910,911]","["""","""",""10.1039/b821555c"",""10.1116/1.3058743""]","[""Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition"",""Carboxylic acids as oxygen sources for the atomic layer deposition of high-kappa metal oxides"",""The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing"",""Effect of annealing and electrical properties of high-kappa thin films grown by atomic layer deposition using carboxylic acids as oxygen source""]","[[""Erwan Rauwel"",""Guylhaine Clavel"",""Marc-Georg Willinger"",""Protima Rauwel"",""Nicola Pinna""],[""Rauwel, E."",""Willinger, M. G."",""Ducroquet, F."",""Rauwel, P."",""Matko, I."",""Kiselev, D."",""Pinna, N.""],[""Willinger, Marc-Georg"",""Neri, Giovanni"",""Bonavita, Anna"",""Micali, Giuseppe"",""Rauwel, Erwan"",""Herntrich, Tobias"",""Pinna, Nicola""],[""Rauwel, E."",""Ducroquet, F."",""Rauwel, P."",""Willinger, M. -G."",""Matko, I."",""Pinna, N.""]]","[2008,2008,2009,2009]","[""Angew. Chem., Int. Ed."",""J. Phys. Chem. C"",""Phys. Chem. Chem. Phys."",""J. Vac. Sci. Technol., B""]","[""E. Rauwel, G. Clavel, M.-G. Willinger, P. Rauwel, and N. Pinna, Angew. Chem., Int. Ed. 47, 3592 (2008)."",""E. Rauwel, M. G. Willinger, F. Ducroquet, P. Rauwel, I. Matko, D. Kiselev, and N. Pinna, J. Phys. Chem. C 112, 12754 (2008)."",""M.-G. Willinger, G. Neri, A. Bonavita, G. Micali, E. Rauwel, T. Herntrich, and N. Pinna, Phys. Chem. Chem. Phys. 11, 3615 (2009)."",""E. Rauwel, F. Ducroquet, P. Rauwel, M. G. Willinger, I. Matko, and N. Pinna, J. Vac. Sci. Technol. B 27, 230 (2009).""]" +,Ti(OiPr)4,NH3,xerogel,140,,,,,,898,[898],"[""10.1088/0957-4484/21/18/185601""]","[""Peptide-templating dye-sensitized solar cells""]","[[""Han, Tae Hee"",""Moon, Hyoung-Seok"",""Hwang, Jin Ok"",""Seok, Sang Il"",""Im, Sang Hyuk"",""Kim, Sang Ouk""]]",[2010],"[""Nanotechnology""]","[""T. H. Han, H.-S. Moon, J. O. Hwang, S. I. Seok, S. H. Im, and S. O. Kim, Nanotechnology 21, 185601 (2010).""]" +,Ti(thd)2(OiPr)2,H2O,Pt,220–420,,,,,,913,[913],"[""""]","[""Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films""]","[[""Watanabe, T."",""Hoffmann-Eifert, S."",""Hwang, C. S."",""Waser, R.""]]",[2006],"[""J. Electrochem. Soc.""]","[""T. Watanabe, S. Hoffmann-Eifert, C. S. Hwang, and R. Waser, J. Electrochem. Soc. 153, F199 (2006).""]" +,Ti(thd)2(OiPr)2,H2O,Pt,,340–470,,,,,916,[916],"[""10.1149/1.3138722""]","[""Liquid Injection Atomic Layer Deposition of Crystalline TiO2 Thin Films with a Smooth Morphology from Ti(O-i-Pr)(2)(DPM)(2)""]","[[""Kim, Seong Keun"",""Hoffmann-Eifert, Susanne"",""Mi, Shaobo"",""Waser, Rainer""]]",[2009],"[""J. Electrochem. Soc.""]","[""S. K. Kim, S. Hoffmann-Eifert, S. Mi, and R. Waser, J. Electrochem. Soc. 156, D296 (2009).""]" +,Ti(trhd)2\-(O(CMe2Et)2,H2O,Pt,220–420,,,,,,913,[913],"[""""]","[""Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films""]","[[""Watanabe, T."",""Hoffmann-Eifert, S."",""Hwang, C. S."",""Waser, R.""]]",[2006],"[""J. Electrochem. Soc.""]","[""T. Watanabe, S. Hoffmann-Eifert, C. S. Hwang, and R. Waser, J. Electrochem. Soc. 153, F199 (2006).""]" +,Ti(NMe2)4,H2O,"Si, H-Si, CeO2, ZnO, Ni",50–250,250–350,,300–350,,,"864, 914, 918, 919, 921, and 923","[864,914,918,919,921,923]","["""","""","""",""10.1002/smll.200801249"",""10.1021/am900904k"",""10.1039/c0cc01689f""]","[""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition"",""Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O"",""Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors"",""Tailoring the Pore Size and Architecture of CeO2/TiO2 Core/Shell Inverse Opals by Atomic Layer Deposition"",""Metal Oxide Microrings with Femtoliter Capacity for Raman Microspectroscopy"",""Self-assembled Ni/TiO2 nanocomposite anodes synthesized via electroless plating and atomic layer deposition on biological scaffolds""]","[[""Xie, Q."",""Musschoot, J."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Detavernier, C."",""Van den Berghe, S."",""Jiang, Y. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""Xie, Q."",""Jiang, Y. L."",""Detavernier, C."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""Maeng, W. J."",""Kim, H.""],[""Alessandri, Ivano"",""Zucca, Marcello"",""Ferroni, Matteo"",""Bontempi, Elza"",""Depero, Laura E.""],[""Alessandri, Ivano"",""Depero, Laura E.""],[""Gerasopoulos, Konstantinos"",""Chen, Xilin"",""Culver, James"",""Wang, Chunsheng"",""Ghodssi, Reza""]]","[2008,2007,2006,2009,2010,2010]","[""J. Electrochem. Soc."",""J. Appl. Phys."",""Electrochem. Solid-State Lett."",""Small"",""ACS Appl. Mater. Interfaces"",""Chem. Comm.""]","[""Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J. Electrochem. Soc. 155, H688 (2008)."",""Q. Xie, Y. L. Jiang, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, G. P. Ru, B. Z. Li, and X. P. Qu, J. Appl. Phys. 102, 083521 (2007)."",""W. J. Maeng and H. Kim, Electrochem. Solid-State Lett. 9, G191 (2006)."",""I. Alessandri, M. Zucca, M. Ferroni, E. Bontempi, and L. E. Depero, Small 5, 336 (2009)."",""I. Alessandri and L. E. Depero, ACS Appl. Mater. Interfaces 2, 594 (2010)."",""K. Gerasopoulos, X. Chen, J. Culver, C. Wang, and R. Ghodssi, Chem. Comm. 46, 7349 (2010).""]" +,Ti(NMe2)4,H2O⚡,Si,50–210,,,,,,864,[864],"[""""]","[""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition""]","[[""Xie, Q."",""Musschoot, J."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Detavernier, C."",""Van den Berghe, S."",""Jiang, Y. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""]]",[2008],"[""J. Electrochem. Soc.""]","[""Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J. Electrochem. Soc. 155, H688 (2008).""]" +,Ti(NMe2)4,O2⚡,"Si, Kapton, SS, Zn",50–210,250–400,,300–400,,,"864, 928, and 930","[864,928,930]","["""",""10.1149/1.3095515"",""10.1016/j.tsf.2010.01.015""]","[""Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition"",""Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application"",""Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition""]","[[""Xie, Q."",""Musschoot, J."",""Deduytsche, D."",""Van Meirhaeghe, R. L."",""Detavernier, C."",""Van den Berghe, S."",""Jiang, Y. L."",""Ru, G. P."",""Li, B. Z."",""Qu, X. P.""],[""Lee, Chang-Soo"",""Kim, Jungwon"",""Son, J. Y."",""Maeng, W. J."",""Jo, Du-Hwan"",""Choi, Wonyong"",""Kim, Hyungjun""],[""Lee, Chang-Soo"",""Kim, Jungwon"",""Gu, Gil Ho"",""Jo, Du-Hwan"",""Park, Chan Gyung"",""Choi, Wonyong"",""Kim, Hyungjun""]]","[2008,2009,2010]","[""J. Electrochem. Soc."",""J. Electrochem. Soc."",""Thin Solid Films""]","[""Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J. Electrochem. Soc. 155, H688 (2008)."",""C.-S. Lee, J. Kim, J. Y. Son, W. J. Maeng, D.-H. Jo, W. Choi, and H. Kim, J. Electrochem. Soc. 156, D188 (2009)."",""C.-S. Lee, J. Kim, G. H. Gu, D.-H. Jo, C. G. Park, W. Choi, and H. Kim, Thin Solid Films 518, 4757 (2010).""]" +VOx,,,,Amorphous,Orthorhombic V2O5,Monoclinic VO2,,,,,[],[],[],[],[],[],[] +,VOCl3,H2O,silica,,490,490,,,,1005,[1005],"[""""]","[""Atomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al2O3 and VO2 photonic crystal systems""]","[[""I.M. Povey"",""M. Bardosova"",""F. Chalvet"",""M.E. Pemble"",""H.M. Yates""]]",[2007],"[""Surf. Coat. Technol.""]","[""I. Povey, M. Bardosova, F. Chalvet, M. Pemble, and H. Yates, Surf. Coat. Technol. 201, 9345 (2007).""]" +,VO(acac)2,O2,glass,,,400–475,,,,1019,[1019],"[""""]","[""Thin films of VO2 on glass by atomic layer deposition: microstructure and electrical properties""]","[[""Pritesh Dagur"",""Anil U. Mane"",""S.A. Shivashankar""]]",[2005],"[""J. Cryst. Growth""]","[""P. Dagur, A. U. Mane, and S. Shivashankar, J. Cryst. Growth 275, e1223 (2005).""]" +,VO(OiPr)3,H2O,"SnO2, SiO2, Ti",50–150,,,,,,"1006, 1008, and 1010","[1006,1008,1010]","["""","""",""10.1149/1.3133169""]","[""Atomic Layer Epitaxy of Vanadium Oxide Thin Films and Electrochemical Behavior in Presence of Lithium Ions"",""Amorphous vanadium oxide films synthesised by ALCVD for lithium rechargeable batteries"",""Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide""]","[[""J. C. Badot"",""S. Ribes"",""E. B. Yousfi"",""V. Vivier"",""J. P. Pereira-Ramos"",""N. Baffier"",""D. Lincot""],[""Le Van, K."",""Groult, H."",""Mantoux, A."",""Perrigaud, L."",""Lantelme, F."",""Lindstr om, R."",""Badour-Hadjean, R."",""Zanna, S."",""Lincot, D.""],[""Musschoot, J."",""Deduytsche, D."",""Poelman, H."",""Haemers, J."",""Van Meirhaeghe, R. L."",""Van den Berghe, S."",""Detavernier, C.""]]","[2000,2006,2009]","[""Electrochem. Solid-State Lett."",""J. Power Sources"",""J. Electrochem. Soc.""]","[""J. C. Badot, S. Ribes, E. B. Yousfi, V. Vivier, J. P. Pereira-Ramos, N. Baffier, and D. Lincot, Electrochem. Solid-State Lett. 3, 485 (2000)."",""K. Le Van, H. Groult, A. Mantoux, L. Perrigaud, F. Lantelme, R. Lindstr€om, R. Badour-Hadjean, S. Zanna, and D. Lincot, J. Power Sources 160, 592 (2006)."",""J. Musschoot, D. Deduytsche, H. Poelman, J. Haemers, R. L. Van Meirhaeghe, S. Van den Berghe, and C. Detavernier, J. Electrochem. Soc. 156, P122 (2009).""]" +,VO(OiPr)3,H2O⚡,SiO2,150,,,,,,1010,[1010],"[""10.1149/1.3133169""]","[""Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide""]","[[""Musschoot, J."",""Deduytsche, D."",""Poelman, H."",""Haemers, J."",""Van Meirhaeghe, R. L."",""Van den Berghe, S."",""Detavernier, C.""]]",[2009],"[""J. Electrochem. Soc.""]","[""J. Musschoot, D. Deduytsche, H. Poelman, J. Haemers, R. L. Van Meirhaeghe, S. Van den Berghe, and C. Detavernier, J. Electrochem. Soc. 156, P122 (2009).""]" +,VO(OiPr)3,O2,"silica, titania",90–120,,,,,,1012–1014,"[1012,1013,1014]","["""","""",""""]","[""Surface-Controlled Gas-Phase Deposition and Characterization of Highly Dispersed Vanadia on Silica"",""Gas-phase synthesis, structure and surface acid�base properties of highly dispersed vanadia/titania/silica catalysts"",""Atomic layer deposition and surface characterization of highly dispersed titania/silica-supported vanadia catalysts""]","[[""J. Ker anen"",""C. Guimon"",""E. Iiskola"",""A. Auroux"",""L. Niinist o""],[""J. Ker anen"",""C. Guimon"",""A. Auroux"",""E. I. Iiskola"",""L. Niinist o""],[""J. Ker anen"",""C. Guimon"",""E. Liskola"",""A. Auroux"",""L. Niinist o""]]","[2003,2003,2003]","[""J. Phys. Chem. B"",""Phys. Chem. Chem. Phys."",""Catal. Today""]","[""J. Ker€anen, C. Guimon, E. Iiskola, A. Auroux, and L. Niinist€o, J. Phys. Chem. B 107, 10773 (2003)."",""J. Ker€anen, C. Guimon, A. Auroux, E. I. Iiskola, and L. Niinist€o, Phys. Chem. Chem. Phys. 5, 5333 (2003)."",""J. Ker€anen, C. Guimon, E. Iiskola, A. Auroux, and L. Niinist€o, Catal. Today 78, 149 (2003).""]" +,VO(OiPr)3,O2⚡,SiO2,,150,,,,,1010,[1010],"[""10.1149/1.3133169""]","[""Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide""]","[[""Musschoot, J."",""Deduytsche, D."",""Poelman, H."",""Haemers, J."",""Van Meirhaeghe, R. L."",""Van den Berghe, S."",""Detavernier, C.""]]",[2009],"[""J. Electrochem. Soc.""]","[""J. Musschoot, D. Deduytsche, H. Poelman, J. Haemers, R. L. Van Meirhaeghe, S. Van den Berghe, and C. Detavernier, J. Electrochem. Soc. 156, P122 (2009).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_032_table_023/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_032_table_023/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..966aaf25f63f2966052e851c7dc6cbf1ac7dea83 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_032_table_023/gold.csv @@ -0,0 +1,36 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,VO(OnPr)3,CH3COOH,"CNT, CNF",200,200,,,,,"910, 1015, and 1016","[910,1015,1016]","[""10.1039/b821555c"",""10.1021/nl801785b"",""10.1016/j.diamond.2009.11.014""]","[""The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing"",""Vanadium Oxide Sensing Layer Grown on Carbon Nanotubes by a New Atomic Layer Deposition Process"",""Micro-Raman investigation of vanadium-oxide coated tubular carbon nanofibers for gas-sensing applications""]","[[""Willinger, Marc-Georg"",""Neri, Giovanni"",""Bonavita, Anna"",""Micali, Giuseppe"",""Rauwel, Erwan"",""Herntrich, Tobias"",""Pinna, Nicola""],[""Willinger, Marc-Georg"",""Neri, Giovanni"",""Rauwel, Erwan"",""Bonavita, Anna"",""Micali, Giuseppe"",""Pinna, Nicola""],[""Santangelo, S."",""Messina, G."",""Faggio, G."",""Willinger, M. -G."",""Pinna, N."",""Donato, A."",""Arena, A."",""Donato, N."",""Neri, G.""]]","[2009,2008,2010]","[""Phys. Chem. Chem. Phys."",""Nano Lett."",""Diamond Relat. Mater.""]","[""M.-G. Willinger, G. Neri, A. Bonavita, G. Micali, E. Rauwel, T. Herntrich, and N. Pinna, Phys. Chem. Chem. Phys. 11, 3615 (2009)."",""M.-G. Willinger, G. Neri, E. Rauwel, A. Bonavita, G. Micali, and N. Pinna, Nano Lett. 8, 4201 (2008)."",""S. Santangelo, G. Messina, G. Faggio, M. G. Willinger, N. Pinna, A. Donato, A. Arena, N. Donato, and G. Neri, Diamond Relat. Mater. 19, 590 (2010).""]" +CrOx,,,,Amorphous,-Cr2O3,,,,,,[],[],[],[],[],[],[] +,Cr(acac)3,air,alumina,200,,,,,,1033 and 1034,"[1033,1034]","["""",""""]","[""Surface characteristics and activity of chromia/alumina catalysts prepared by atomic layer epitaxy"",""Dehydrogenation of i -butane on CrO _x / Al _2 O _3 catalysts prepared by ALE and impregnation techniques""]","[[""A. Kytokivi"",""J.-P. Jacobs"",""A. Hakuli"",""J. Merilainen"",""H. H. Brongersma""],[""A. Hakuli"",""A. Kytokivi"",""A. O. I. Krause""]]","[1996,2000]","[""J. Catal."",""Appl. Catal., A""]","[""A. Kyt€okivi, J.-P. Jacobs, A. Hakuli, J. Meril€ainen, and H. H. Brongersma, J. Catal. 162, 190 (1996)."",""A. Hakuli, A. Kyt€okivi, and A. O. I. Krause, Appl. Catal., A 190, 219 (2000).""]" +,CrO2Cl2,MeOH,Al2O3e,,330–465,,,,,1030 and 1031,"[1030,1031]","["""",""""]","[""Characterization of asymmetric rhombohedral twin in epitaxial alpha-Cr2O3 thin films by X-ray and electron diffraction"",""Atomic layer deposition of Cr _2 O _3 thin films: Effect of crystallization on growth and properties""]","[[""M andar, H."",""Uustare, T."",""Aarik, J."",""Tarre, A."",""Rosental, A.""],[""Aivar Tarre"",""Jaan Aarik"",""Hugo M andar"",""Ahti Niilisk"",""Rainer P arna"",""Raul Rammula"",""Teet Uustare"",""Arnold Rosental"",""V aino Sammelselg""]]","[2007,2008]","[""Thin Solid Films"",""Appl. Surf. Sci.""]","[""H. M€andar, T. Uustare, J. Aarik, A. Tarre, and A. Rosental, Thin Solid Films 515, 4570 (2007)."",""A. Tarre, J. Aarik, H. M€andar, A. Niilisk, R. P€arna, R. Rammula, T. Uustare, A. Rosental, and V. Sammelselg, Appl. Surf. Sci. 254, 5149 (2008).""]" +,CrO2Cl2,MeOH,"SiO2, Si, TiO2",330–375,330–465,,,,,817 and 1031,"[817,1031]","[""10.1016/j.surfcoat.2009.11.039"",""""]","[""Structural characterization of TiO2-Cr2O3 nanolaminates grown by atomic layer deposition"",""Atomic layer deposition of Cr _2 O _3 thin films: Effect of crystallization on growth and properties""]","[[""Sammelselg, V."",""Tarre, A."",""Lu, J."",""Aarik, J."",""Niilisk, A."",""Uustare, T."",""Netsipailo, I."",""Rammula, R."",""P arna, R."",""Rosental, A.""],[""Aivar Tarre"",""Jaan Aarik"",""Hugo M andar"",""Ahti Niilisk"",""Rainer P arna"",""Raul Rammula"",""Teet Uustare"",""Arnold Rosental"",""V aino Sammelselg""]]","[2010,2008]","[""Surf. Coat. Technol."",""Appl. Surf. Sci.""]","[""V. Sammelselg, A. Tarre, J. Lu, J. Aarik, A. Niilisk, T. Uustare, I. Net\u0004sipailo, R. Rammula, R. P€arna, and A. Rosental, Surf. Coat. Technol. 204, 2015 (2010)."",""A. Tarre, J. Aarik, H. M€andar, A. Niilisk, R. P€arna, R. Rammula, T. Uustare, A. Rosental, and V. Sammelselg, Appl. Surf. Sci. 254, 5149 (2008).""]" +MnOx,,,,Amorphous,β-MnO2,Mn3O4,-MnO2,-MnO2,MnO,,[],[],[],[],[],[],[] +,Mn(thd)3,O3,"SLG, Si",,162–257,235–331,,,,1039,[1039],"[""""]","[""Growth of manganese oxide thin films by atomic layer deposition""]","[[""O. Nilsen"",""H. Fjellv g"",""A. Kjekshus""]]",[2003],"[""Thin Solid Films""]","[""O. Nilsen, H. Fjellva˚g, and A. Kjekshus, Thin Solid Films 444, 44 (2003).""]" +,Mn(thd)3,O3,"NaCl, KCl, KBr",,,,186,,,1040,[1040],"[""""]","[""Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition""]","[[""O. Nilsen"",""S. Foss"",""H. Fjellv g"",""A. Kjekshus""]]",[2004],"[""Thin Solid Films""]","[""O. Nilsen, S. Foss, H. Fjellva˚g, and A. Kjekshus, Thin Solid Films 468, 65 (2004).""]" +,Mn(thd)3,O3,"SiO2, Al2O3, muscovite, MgO, SLG, Si",,186,,,,,1040,[1040],"[""""]","[""Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition""]","[[""O. Nilsen"",""S. Foss"",""H. Fjellv g"",""A. Kjekshus""]]",[2004],"[""Thin Solid Films""]","[""O. Nilsen, S. Foss, H. Fjellva˚g, and A. Kjekshus, Thin Solid Films 468, 65 (2004).""]" +,Mn(thd)3,O3,Al2O3,,,,,186,,1040,[1040],"[""""]","[""Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition""]","[[""O. Nilsen"",""S. Foss"",""H. Fjellv g"",""A. Kjekshus""]]",[2004],"[""Thin Solid Films""]","[""O. Nilsen, S. Foss, H. Fjellva˚g, and A. Kjekshus, Thin Solid Films 468, 65 (2004).""]" +,Mn(thd)3,O3,Al2O3e,,,,,186,,1041,[1041],"[""""]","[""Structure determination of MnO2 films grown on single crystal alpha-Al2O3 substrates""]","[[""Foss, S."",""Nilsen, O."",""Olsen, A."",""Tafto, J.""]]",[2005],"[""Philos. Mag.""]","[""S. Foss, O. Nilsen, A. Olsen, and J. Tafto, Philos. Mag. 85, 2689 (2005).""]" +,Mn(CpEt)2,H2O,Si,,,,,,150,1037,[1037],"[""10.1016/j.tsf.2009.02.050""]","[""Atomic layer deposition of MnO using Bis(ethylcyclopentadienyl) manganese and H2O""]","[[""Burton, B. B."",""Fabreguette, F. H."",""George, S. M.""]]",[2009],"[""Thin Solid Films""]","[""B. B. Burton, F. H. Fabreguette, and S. M. George, Thin Solid Films 517, 5658 (2009).""]" +FeOx,,,,Amorphous,-Fe2O3,-Fe2O3,Fe3O4,,,,[],[],[],[],[],[],[] +,FeCl3,H2O,Pt,,500,,,,,1054,[1054],"[""""]","[""Characterization and gas-sensing behavior of an iron oxide thin film prepared by atomic layer deposition""]","[[""Mikko Aronniemi"",""J. Saino"",""J. Lahtinen""]]",[2008],"[""Thin Solid Films""]","[""M. Aronniemi, J. Saino, and J. Lahtinen, Thin Solid Films 516, 6110 (2008).""]" +,FeCp2,O2,"Si, Al2O3",,350–600,350–600,350–600,,,1062,[1062],"[""""]","[""Atomic Layer Deposition of Iron Oxide Thin Films and Nanotubes using Ferrocene and Oxygen as Precursors""]","[[""M rten Rooth"",""Anders Johansson"",""Kaupo Kukli"",""Jaan Aarik"",""Mats Boman"",""Anders H rsta""]]",[2008],"[""Chem. Vap. Deposition""]","[""M. Rooth, A. Johansson, K. Kukli, J. Aarik, M. Boman, and A. Ha˚rsta, Chem. Vap. Deposition 14, 67 (2008).""]" +,FeCp2,O2,TiO2,,400–500,,400,,,821,[821],"[""10.1063/1.3245395""]","[""Template-based multiwalled TiO2/iron oxides nanotubes: Structure and magnetic properties""]","[[""Soroka, I. L."",""Rooth, M."",""Lu, Jun"",""Boman, M."",""Svedlindh, P."",""Carlsson, J. -O."",""H rsta, A.""]]",[2009],"[""J. Appl. Phys.""]","[""I. L. Soroka, M. Rooth, J. Lu, M. Boman, P. Svedlindh, J. O. Carlsson, and A. Ha˚rsta, J. Appl. Phys. 106, 084313 (2009).""]" +,FeCp2,O2,ZrO2,367–534,,,,,,1063,[1063],"[""10.1016/j.tsf.2008.09.086""]","[""Atomic layer deposition of iron(III) oxide on zirconia nanoparticles in a fluidized bed reactor using ferrocene and oxygen""]","[[""Scheffe, Jonathan R."",""Frances, Andrea"",""King, David M."",""Liang, Xinhua"",""Branch, Brittany A."",""Cavanagh, Andrew S."",""George, Steven M."",""Weimer, Alan W.""]]",[2009],"[""Thin Solid Films""]","[""J. R. Scheffe, A. Frances, D. M. King, X. Liang, B. A. Branch, A. S. Cavanagh, S. M. George, and A. W. Weimer, Thin Solid Films 517, 1874 (2009).""]" +,Fe(thd)3,O3,"SLG, Si, Al2O3",,160–210,,,,,1057 and 1058,"[1057,1058]","["""",""""]","[""Effect of magnetic field on the growth of - Fe _2 O _3 thin films by atomic layer deposition"",""Growth of Fe2O3 thin films by atomic layer deposition""]","[[""O. Nilsen"",""M. Lie"",""S. Foss"",""H. Fjellv g"",""A. Kjekshus""],[""Lie, M."",""Fjellv g, H."",""Kjekshus, A.""]]","[2004,2005]","[""Appl. Surf. Sci."",""Thin Solid Films""]","[""O. Nilsen, M. Lie, S. Foss, H. Fjellva˚g, and A. Kjekshus, Appl. Surf. Sci. 227, 40 (2004)."",""M. Lie, H. Fjellva˚g, and A. Kjekshus, Thin Solid Films 488, 74 (2005).""]" +,Fe(thd)3,O3,MgO,,,160–210,,,,1058,[1058],"[""""]","[""Growth of Fe2O3 thin films by atomic layer deposition""]","[[""Lie, M."",""Fjellv g, H."",""Kjekshus, A.""]]",[2005],"[""Thin Solid Films""]","[""M. Lie, H. Fjellva˚g, and A. Kjekshus, Thin Solid Films 488, 74 (2005).""]" +,Fe(thd)3,O3,"SLG, Al2O3",,186,,,,,1057,[1057],"[""""]","[""Effect of magnetic field on the growth of - Fe _2 O _3 thin films by atomic layer deposition""]","[[""O. Nilsen"",""M. Lie"",""S. Foss"",""H. Fjellv g"",""A. Kjekshus""]]",[2004],"[""Appl. Surf. Sci.""]","[""O. Nilsen, M. Lie, S. Foss, H. Fjellva˚g, and A. Kjekshus, Appl. Surf. Sci. 227, 40 (2004).""]" +,Fe(OtBu)3,H2O,Al2O3,,130–170,,,,,1066,[1066],"[""""]","[""Ordered iron oxide nanotube arrays of controlled geometry and tunable magnetism by atomic layer deposition""]","[[""Bachmann, J."",""Jing, J."",""Knez, M."",""Barth, S."",""Shen, H."",""Mathur, S."",""G osele, U."",""Nielsch, K.""]]",[2007],"[""J. Am. Chem. Soc.""]","[""J. Bachmann, J. Jing, M. Knez, S. Barth, H. Shen, S. Mathur, U. G€osele, and K. Nielsch, J. Am. Chem. Soc. 129, 9554 (2007).""]" +CoOx,,,,Amorphous,Co3O4,CoO,,,,,[],[],[],[],[],[],[] +,CoI2,O2,"SiO2, MgOe",,475–700,,,,,1078,[1078],"[""""]","[""Atomic layer deposition of Co3O4 thin films using a CoI2/O-2 precursor combination""]","[[""Rooth, M."",""Lindahl, E."",""H rsta, A.""]]",[2006],"[""Chem. Vap. Deposition""]","[""M. Rooth, E. Lindahl, and A. Ha˚rsta, Chem. Vap. Deposition 12, 209 (2006).""]" +,Co(acac)3,O2,silica,,400,,,,,1083,[1083],"[""""]","[""Characterisation of Co / SiO _2 catalysts prepared from Co (acac) _3 by gas phase deposition""]","[[""L. B. Backman"",""A. Rautiainen"",""M. Lindblad"",""O. Jylha"",""A. O. I. Krause""]]",[2001],"[""Appl. Catal., A""]","[""L. B. Backman, A. Rautiainen, M. Lindblad, O. Jylh€a, and A. O. I. Krause, Appl. Catal., A 208, 223 (2001).""]" +,Co(thd)2,O3,"Si, SLG, Corning 7059",,114–450,250–400,,,,1088 and 1089,"[1088,1089]","["""",""""]","[""Growth of LaCoO _3 thin films from eta -diketonate precursors"",""Growth of thin films of Co3O4 by atomic layer deposition""]","[[""H. Seim"",""M. Nieminen"",""L. Niinist o"",""H. Fjellv g"",""L.-S. Johansson""],[""Klepper, K. B."",""Nilsen, O."",""Fjellv g, H.""]]","[1997,2007]","[""Appl. Surf. Sci."",""Thin Solid Films""]","[""H. Seim, M. Nieminen, L. Niinist€o, H. Fjellva˚g, and L.-S. Johansson, Appl. Surf. Sci. 112, 243 (1997)."",""K. B. Klepper, O. Nilsen, and H. Fjellva˚g, Thin Solid Films 515, 7772 (2007).""]" +,Co(thd)3,O3,"Al2O3e, MgOe, SrTiOe",,138–283,,,,,1090,[1090],"[""""]","[""Epitaxial growth of cobalt oxide by atomic layer deposition""]","[[""Klepper, K. B."",""Nilsen, O."",""Fjellv g, H.""]]",[2007],"[""J. Cryst. Growth""]","[""K. B. Klepper, O. Nilsen, and H. Fjellva˚g, J. Cryst. Growth 307, 457 (2007).""]" +NiO,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Ni(acac)2,H2O,glass,190–310,,,,,,1107,[1107],"[""""]","[""Studies of NiO thin film formation by atomic layer epitaxy""]","[[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L. Niinist o""]]",[1998],"[""Mater. Sci. Eng., B""]","[""M. Utriainen, M. Kr€oger-Laukkanen, and L. Niinist€o, Mater. Sci. Eng., B 54, 98 (1998).""]" +,Ni(acac)2,CH3COOH,glass,190–310,,,,,,1107,[1107],"[""""]","[""Studies of NiO thin film formation by atomic layer epitaxy""]","[[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L. Niinist o""]]",[1998],"[""Mater. Sci. Eng., B""]","[""M. Utriainen, M. Kr€oger-Laukkanen, and L. Niinist€o, Mater. Sci. Eng., B 54, 98 (1998).""]" +,Ni(acac)2,O3+H2O,glass,,190–310,,,,,1107,[1107],"[""""]","[""Studies of NiO thin film formation by atomic layer epitaxy""]","[[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L. Niinist o""]]",[1998],"[""Mater. Sci. Eng., B""]","[""M. Utriainen, M. Kr€oger-Laukkanen, and L. Niinist€o, Mater. Sci. Eng., B 54, 98 (1998).""]" +,Ni(dmg)2,H2O,glass,190–310,,,,,,1107,[1107],"[""""]","[""Studies of NiO thin film formation by atomic layer epitaxy""]","[[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L. Niinist o""]]",[1998],"[""Mater. Sci. Eng., B""]","[""M. Utriainen, M. Kr€oger-Laukkanen, and L. Niinist€o, Mater. Sci. Eng., B 54, 98 (1998).""]" +,Ni(dmg)2,O3,glass,,190–310,,,,,1107,[1107],"[""""]","[""Studies of NiO thin film formation by atomic layer epitaxy""]","[[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L. Niinist o""]]",[1998],"[""Mater. Sci. Eng., B""]","[""M. Utriainen, M. Kr€oger-Laukkanen, and L. Niinist€o, Mater. Sci. Eng., B 54, 98 (1998).""]" +,Ni(apo)2,O3,glass,,190–310,,,,,1107,[1107],"[""""]","[""Studies of NiO thin film formation by atomic layer epitaxy""]","[[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L. Niinist o""]]",[1998],"[""Mater. Sci. Eng., B""]","[""M. Utriainen, M. Kr€oger-Laukkanen, and L. Niinist€o, Mater. Sci. Eng., B 54, 98 (1998).""]" +,Ni(dmamp)2,H2O,H-Si,100–160,,,,,,1102 and 1103,"[1102,1103]","["""",""""]","[""Atomic layer deposition of nickel oxide films using Ni(dmamp)(2) and water"",""Field emission properties of ZnO nanorods coated with NiO film""]","[[""Yang, T. S."",""Cho, W. T."",""Kim, M."",""An, K. S."",""Chung, T. M."",""Kim, C. G."",""Kim, Y.""],[""Yang, J. H."",""Lee, S. Y."",""Song, W. S."",""Shin, Y. S."",""Park, C. Y."",""Kim, H. J."",""Cho, W."",""An, K. S.""]]","[2005,2008]","[""J. Vac. Sci. Technol., A"",""J. Vac. Sci. Technol., B""]","[""T. S. Yang, W. T. Cho, M. Kim, K. S. An, T. M. Chung, C. G. Kim, and Y. Kim, J. Vac. Sci. Technol. A 23, 1238 (2005)."",""J. H. Yang, S. Y. Lee, W. S. Song, Y. S. Shin, C. Y. Park, H. J. Kim, W. Cho, and K. S. An, J. Vac. Sci. Technol. B 26, 1021 (2008).""]" +,Ni(CpEt)2,O3,H-Si,150,200–300,,,,,1100,[1100],"[""10.1149/1.2965456""]","[""Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors""]","[[""Lu, H. L."",""Scarel, G."",""Wiemer, C."",""Perego, M."",""Spiga, S."",""Fanciulli, M."",""Pavia, G.""]]",[2008],"[""J. Electrochem. Soc.""]","[""H. L. Lu, G. Scarel, C. Wiemer, M. Perego, S. Spiga, M. Fanciulli, and G. Pavia, J. Electrochem. Soc. 155, H807 (2008).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_033_table_024/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_033_table_024/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..048872ede1fcae79db5c3d5c7a71c2f92f3634ef --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_033_table_024/gold.csv @@ -0,0 +1,15 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Ni(Cp)2,O3,"H-Si, Ni, Pt, W, TiN",,150–300,,,,,1098–1100,"[1098,1099,1100]","[""10.1016/j.mee.2008.09.018"",""10.1016/j.mee.2008.09.039"",""10.1149/1.2965456""]","[""Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition"",""Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)"",""Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors""]","[[""Spiga, S."",""Lamperti, A."",""Wiemer, C."",""Perego, M."",""Cianci, E."",""Tallarida, G."",""Lu, H. L."",""Alia, M."",""Volpe, F. G."",""Fanciulli, M.""],[""Lamperti, A."",""Spiga, S."",""Lu, H. L."",""Wiemer, C."",""Perego, M."",""Cianci, E."",""Alia, M."",""Fanciulli, M.""],[""Lu, H. L."",""Scarel, G."",""Wiemer, C."",""Perego, M."",""Spiga, S."",""Fanciulli, M."",""Pavia, G.""]]","[2008,2008,2008]","[""Microelectron. Eng."",""Microelectron. Eng."",""J. Electrochem. Soc.""]","[""S. Spiga, A. Lamperti, C. Wiemer, M. Perego, E. Cianci, G. Tallarida, H. L. Lu, M. Alia, F. G. Volpe, and M. Fanciulli, Microelectron. Eng. 85, 2414 (2008)."",""A. Lamperti, S. Spiga, H. L. Lu, C. Wiemer, M. Perego, E. Cianci, M. Alia, and M. Fanciulli, Microelectron. Eng. 85, 2425 (2008)."",""H. L. Lu, G. Scarel, C. Wiemer, M. Perego, S. Spiga, M. Fanciulli, and G. Pavia, J. Electrochem. Soc. 155, H807 (2008).""]" +,Ni(thd)2,H2O,"SiO2, Si",,205–275,,,,,1108 and 1110,"[1108,1110]","[""10.1002/cvde.200906762"",""DOI: 10.1016/j.surfcoat.2010.07.059""]","[""Atomic Layer Deposition of NiO by the Ni(thd)(2)/H2O Precursor Combination"",""Growth and stability of CVD Ni3N and ALD NiO dual layers""]","[[""Lindahl, Erik"",""Ottosson, Mikael"",""Carlsson, Jan-Otto""],[""Erik Lindahl"",""Mikael Ottosson"",""Jan-Otto Carlsson""]]","[2009,2010]","[""Chem. Vap. Deposition"",""Surf. Coat. Technol.""]","[""E. Lindahl, M. Ottosson, and J.-O. Carlsson, Chem. Vap. Deposition 15, 186 (2009)."",""E. Lindahl, M. Ottosson, and J.-O. Carlsson, Surf. Coat. Technol. 205, 710 (2010).""]" +,Ni(thd)2,H2O,"MgO(100)e, -Al2O3(001)e",,200–275,,,,,1109,[1109],"[""10.1016/j.jcrysgro.2009.06.030""]","[""Epitaxial NiO (100) and NiO (111) films grown by atomic layer deposition""]","[[""Lindahl, E."",""Lu, J."",""Ottosson, M."",""Carlsson, J. -O.""]]",[2009],"[""J. Cryst. Growth""]","[""E. Lindahl, J. Lu, M. Ottosson, and J. O. Carlsson, J. Cryst. Growth 311, 4082 (2009).""]" +CuOx,,,,Amorphous,Cu2O,,,,,,[],[],[],[],[],[],[] +,Cu(nBu3P)2(acac),O2+H2O,Ta/TaN,,100–150,,,,,1139,[1139],"[""10.1149/1.3110842""]","[""Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO2""]","[[""Waechtler, Thomas"",""Oswald, Steffen"",""Roth, Nina"",""Jakob, Alexander"",""Lang, Heinrich"",""Ecke, Ramona"",""Schulz, Stefan E."",""Gessner, Thomas"",""Moskvinova, Anastasia"",""Schulze, Steffen"",""Hietschold, Michael""]]",[2009],"[""J. Electrochem. Soc.""]","[""T. Waechtler, S. Oswald, N. Roth, A. Jakob, H. Lang, R. Ecke, S. E. Schulz, T. Gessner, A. Moskvinova, S. Schulze, and M. Hietschold, J. Electrochem. Soc. 156, H453 (2009).""]" +ZnO,,,,Amorphous,Hexagonal,,,,,,[],[],[],[],[],[],[] +,Zn,H2O,SLG,,430,,,,,1151,[1151],"[""""]","[""Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers""]","[[""K. S. A. Butcher"",""P. Afifuddin"",""P.-T. Chen"",""M. Godlewski"",""A. Szczerbakow"",""E. M. Goldys"",""T. L. Tansley"",""Freitas, Jr., J. A.""]]",[2002],"[""J. Cryst. Growth""]","[""K. S. A. Butcher, P. Afifuddin, P.-T. Chen, M. Godlewski, A. Szczerbakow, E. M. Goldys, T. L. Tansley, and J. A. Freitas, Jr., J. Cryst. Growth 246, 237 (2002).""]" +,ZnCl2,O2,"Sapphire(0001)e, GaN e",,450–550,,,,,1153–1155,"[1153,1154,1155]","["""","""",""""]","[""Atmospheric pressure atomic layer epitaxy of ZnO on a sapphire (0001) substrate by alternate reaction of ZnCl _2 and O _2"",""Atmospheric pressure atomic layer epitaxy of ZnO using a chloride source"",""Monocrystalline ZnO Films on GaN/Al _2 O _3 by Atomic Layer Epitaxy in Gas Flow""]","[[""K. Kaiya"",""N. Yoshii"",""N. Takahashi"",""T. Nakamura""],[""K. Kaiya"",""N. Yoshii"",""K. Omichi"",""N. Takahashi"",""T. Nakamura"",""S. Okamoto"",""H. Yamamoto""],[""K. Kopalko"",""M. Godlewski"",""J. Z. Domaga a"",""E. usakowska"",""R. Minikayev"",""W. Paszkowicz"",""A. Szczerbakow""]]","[2000,2001,2004]","[""J. Mater. Sci. Lett."",""Chem. Mater."",""Chem. Mater.""]","[""K. Kaiya, N. Yoshii, N. Takahashi, and T. Nakamura, J. Mater. Sci. Lett. 19, 2089 (2000)."",""K. Kaiya, N. Yoshii, K. Omichi, N. Takahashi, T. Nakamura, S. Okamoto, and H. Yamamoto, Chem. Mater. 13, 1952 (2001)."",""K. Kopalko, M. Godlewski, J. Z. Domagała, E. Łusakowska, R. Minikayev, W. Paszkowicz, and A. Szczerbakow, Chem. Mater. 16, 1447 (2004).""]" +,ZnMe2,H2O,"Si, glass, GaN/Al2O3e",,80–300,,,,,1157 and 1160–1162,"[1157,1160,1161,1162]","["""",""10.1063/1.3133803"",""10.1016/j.tsf.2008.11.088"",""10.1002/pssb.200983687""]","[""Atomic layer epitaxy growth of doped zinc-oxide thin-films from organometals"",""ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions"",""Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass"",""Comparison of dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by atomic layer deposition method""]","[[""V. Lujala"",""J. Skarp"",""M. Tammenmaa"",""T. Suntola""],[""Guziewicz, E."",""Godlewski, M."",""Krajewski, T."",""Wachnicki, L."",""Szczepanik, A."",""Kopalko, K."",""W ojcik-Glodowska, A."",""Przezdziecka, E."",""Paszkowicz, W."",""usakowska, E."",""Kruszewski, P."",""Huby, N."",""Tallarida, G."",""Ferrari, S.""],[""Makino, Hisao"",""Miyake, Aki"",""Yamada, Takahiro"",""Yamamoto, Naoki"",""Yamamoto, Tetsuya""],[""Wachnicki, L."",""ukasiewicz, M."",""Witkowski, B."",""Krajewski, T."",""uka, G."",""Kopalko, K."",""Minikayev, R."",""Przezdziecka, E."",""Domaga a, J. Z."",""Godlewski, M."",""Guziewicz, E.""]]","[1994,2009,2009,2010]","[""Appl. Surf. Sci."",""J. Appl. Phys."",""Thin Solid Films"",""Phys. Status Solidi B""]","[""V. Lujala, J. Skarp, M. Tammenmaa, and T. Suntola, Appl. Surf. Sci. 82/ 83, 34 (1994)."",""E. Guziewicz, M. Godlewski, T. Krajewski, L. Wachnicki, A. Szczepanik, K. Kopalko, A. W\u0003ojcik-Glodowska, E. Przezdziecka, W. Paszkowicz, E. Łusakowska, P. Kruszewski, N. Huby, G. Tallarida, and S. Ferrari, J. Appl. Phys. 105, 122413 (2009)."",""H. Makino, A. Miyake, T. Yamada, N. Yamamoto, and T. Yamamoto, Thin Solid Films 517, 3138 (2009)."",""L. Wachnicki, M. Łukasiewicz, B. Witkowski, T. Krajewski, G. Łuka, K. Kopalko, R. Minikayev, E. Przezdziecka, J. Z. Domagała, M. Godlewski, and E. Guziewicz, Phys. Status Solidi B 247, 1699 (2010).""]" +,ZnMe2,O2⚡,"H-Si, Si",,25–120,,,,,1163 and 1164,"[1163,1164]","[""10.1116/1.3119673"",""10.1002/cvde.200806725""]","[""Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition"",""Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc""]","[[""Rowlette, Pieter C."",""Allen, Cary G."",""Bromley, Olivia B."",""Wolden, Colin A.""],[""Rowlette, Pieter C."",""Allen, Cary G."",""Bromley, Olivia B."",""Dubetz, Amy E."",""Wolden, Colin A.""]]","[2009,2009]","[""J. Vac. Sci. Technol., A"",""Chem. Vap. Deposition""]","[""P. C. Rowlette, C. G. Allen, O. B. Bromley, and C. A. Wolden, J. Vac. Sci. Technol. A 27, 761 (2009)."",""P. C. Rowlette, C. G. Allen, O. B. Bromley, A. E. Dubetz, and C. A. Wolden, Chem. Vap. Deposition 15, 15 (2009).""]" +,ZnEt2,H2O,"Si, H-Si, glass, SiO2, Al2O3, TiO2, SnO2, ZnO, MgO, ZnTe, PS, CNT, ISM",,23–400,,,,,"60, 282, 297, 318, 1149, 1157, 1160, 1161, 1186, 1190, 1192–1194, 1196, 1197, 1199, 1201, 1203, 1204, 1207–1210, 1213, 1215–1220, 1222, 1223, 1225, 1228, 1231–1233, 1235–1238, 1241, 1243, 1245, 1248, 1250, 1253, 1257, 1259, 1261–1265, and 2316–2318","[60,282,297,318,1149,1157,1160,1161,1186,1190,1192,1193,1194,1196,1197,1199,1201,1203,1204,1207,1208,1209,1210,1213,1215,1216,1217,1218,1219,1220,1222,1223,1225,1228,1231,1232,1233,1235,1236,1237,1238,1241,1243,1245,1248,1250,1253,1257,1259,1261,1262,1263,1264,1265,2316,2317,2318]","["""",""10.1063/1.2952487"",""10.1021/nn900702e"",""10.1039/b820436e"","""","""",""10.1063/1.3133803"",""10.1016/j.tsf.2008.11.088"","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""10.1063/1.2836819"","""","""","""",""10.1063/1.3000604"","""",""10.1088/0957-4484/19/43/435609"",""10.1002/pssa.200778912"",""DOI: 10.1016/j.tsf.2008.05.026"","""",""10.1016/j.tsf.2009.04.066"",""10.1111/j.1551-2916.2009.03270.x"",""10.1088/0957-4484/20/46/465603"",""10.1088/0268-1242/24/10/105014"",""10.1016/j.jcrysgro.2008.11.086"",""10.1116/1.3098502"",""10.1021/cg800985k"",""10.1016/j.mejo.2008.07.053"",""10.1166/jnn.2009.NS64"",""10.1088/0957-4484/21/1/015302"",""10.1149/1.3269973"",""10.1002/pssb.200983699"",""10.5012/bkcs.2010.31.9.2503"",""10.1002/pssa.201026152"",""10.1063/1.3486058"","""",""10.1002/pssa.200983709"",""10.1149/1.3489953"",""10.1149/1.3463723"",""10.1098/rsta.2010.0011"","""",""10.3365/met.mat.2008.12.759"","""",""10.2320/matertrans.MC200905""]","[""Atomic layer deposition of Zn1-xMgxO buffer layers for Cu(In,Ga)Se-2 solar cells"",""Synthesis and optical properties of ZnO and carbon nanotube based coaxial heterostructures"",""Surface Polarity Shielding and Hierarchical ZnO Nano-Architectures Produced Using Sequential Hydrothermal Crystal Synthesis and Thin Film Atomic Layer Deposition"",""Low-temperature ZnO atomic layer deposition on biotemplates: flexible photocatalytic ZnO structures from eggshell membranes"",""Conformal ZnO coatings on high surface area silica gel using atomic layer deposition"",""Atomic layer epitaxy growth of doped zinc-oxide thin-films from organometals"",""ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions"",""Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass"",""Controlling preferred orientation of ZnO thin films by atomic layer deposition"",""Effect of precursor-pulse on properties of Al-doped ZnO films grown by atomic layer deposition"",""Atomic layer deposition of ZnO on ultralow-density nanoporous silica aerogel monoliths"",""Comparison between ZnO films grown by atomic layer deposition using H _2 O or O _3 as oxidant"",""Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se-2 based thin film solar cells: Band alignment and sulfur gradient"",""Fabrication of ZnO-coated MgO nanorods by using ALD"",""Synthesis and optical properties of ZnO-ZnS core-shell nanotube arrays"",""High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO"",""Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor"",""Low-Temperature Growth of ZnO Thin Films by Atomic Layer Deposition"",""Transparent ZnO-TFT Arrays fabricated by atomic layer deposition"",""ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor"",""Atomic Layer Deposition of UV -Absorbing ZnO Films on SiO _2 and TiO _2 Nanoparticles Using a Fluidized Bed Reactor"",""Variation of ZnO shell thickness and its effects on the characteristics of coaxial nanowires"",""Composite nanowires with MgO/ZnO core-sheath structures: Study of thin ZnO shell layers"",""Extremely low temperature growth of ZnO by atomic layer deposition"",""Characteristics of Zinc-Oxide-Sulfide-Mixed Films Deposited by Using Atomic Layer Deposition"",""Extra-Low Temperature Growth of ZnO Thin Films by Atomic Layer Deposition"",""Microstructure of Intrinsic ZnO Thin Film Grown by Using Atomic Layer Deposition"",""Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing"",""Characterization of ZnO Films Grown at Low Temperature"",""Preferential growth of ZnO thin films by the atomic layer deposition technique"",""Effects of surface pretreatment on growth of ZnO on glass substrate"",""Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor"",""ZnO by ALD - Advantages of the Material Grown at Low Temperature"",""ZnO layers grown by Atomic Layer Deposition: A new material for transparent conductive oxide"",""Synthesis and Gas Sensing Properties of TiO2-ZnO Core-Shell Nanofibers"",""Synthesis of SnO2-ZnO core-shell nanofibers via a novel two-step process and their gas sensing properties"",""Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature"",""Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors"",""Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films"",""Growing ZnO Nanocrystals on Polystyrene Nanospheres by Extra-Low-Temperature Atomic Layer Deposition"",""The influence of growth temperature and precursors' doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique"",""Coating of Nanoporous Membranes: Atomic Layer Deposition versus Sputtering"",""ZnTe-ZnO core-shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition"",""Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties"",""Zinc oxide grown by atomic layer deposition - a material for novel 3D electronics"",""Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition"",""A comparative study of the photoluminescence and conduction mechanisms of low temperature pulsed laser deposited and atomic layer deposited zinc oxide thin films"",""The properties of tris (8-hydroxyquinoline) aluminum organic light emitting diode with undoped zinc oxide anode layer"",""Enhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition"",""Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition"",""Fabrication and Characteristics of Self-Aligned ZnO Nanotube and Nanorod Arrays on Si Substrates by Atomic Layer Deposition"",""Stimulated Emission in Highly (0001)-Oriented ZnO Films Grown by Atomic Layer Deposition on the Amorphous Glass Substrates"",""Atomic layer deposition-based functionalization of materials for medical and environmental health applications"",""Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation"",""Effects of Defects Generated in ALD TiO2 Films on Electrical Properties and Interfacial Reaction in TiO2/SiO2/Si System upon Annealing in Vacuum"",""Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition"",""Fabrication of ZnO Nanopillars by Atomic Layer Deposition""]","[[""T orndahl, T."",""Platzer-Bj orkman, C."",""Kessler, J."",""Edoff, M.""],[""Kim, D. S."",""Lee, S. -M."",""Scholz, R."",""Knez, M."",""G osele, U."",""Fallert, J."",""Kalt, H."",""Zacharias, M.""],[""Na, Jeong-Seok"",""Gong, Bo"",""Scarel, Giovanna"",""Parsons, Gregory N.""],[""Lee, Seung-Mo"",""Grass, Gregor"",""Kim, Gyeong-Man"",""Dresbach, Christian"",""Zhang, Lianbing"",""G osele, Ulrich"",""Knez, Mato""],[""Libera, J. A."",""Elam, J. W."",""Pellin, M. J.""],[""V. Lujala"",""J. Skarp"",""M. Tammenmaa"",""T. Suntola""],[""Guziewicz, E."",""Godlewski, M."",""Krajewski, T."",""Wachnicki, L."",""Szczepanik, A."",""Kopalko, K."",""W ojcik-Glodowska, A."",""Przezdziecka, E."",""Paszkowicz, W."",""usakowska, E."",""Kruszewski, P."",""Huby, N."",""Tallarida, G."",""Ferrari, S.""],[""Makino, Hisao"",""Miyake, Aki"",""Yamada, Takahiro"",""Yamamoto, Naoki"",""Yamamoto, Tetsuya""],[""S.-H. K. Park"",""Y. E. Lee""],[""Kwon, S. J.""],[""Kucheyev, S. O."",""Biener, J."",""Wang, Y. M."",""Baumann, T. F."",""Wu, K. J."",""van Buuren, T."",""Hamza, A. V."",""Satcher, J. H."",""Elam, J. W."",""Pellin, M. J.""],[""S. K. Kim"",""C. S. Hwang"",""S.-H. K. Park"",""S. J. Yun""],[""Platzer-Bj orkman, C."",""T orndahl, T."",""Abou-Ras, D."",""Malmstr om, J."",""Kessler, J."",""Stolt, L.""],[""Kim, H. W."",""Shim, S. H.""],[""Liao, H. C."",""Kuo, P. C."",""Lin, C. C."",""Chen, S. Y.""],[""Lim, S. J."",""Kwon, S. J."",""Kim, H."",""Park, J. S.""],[""I.A. Kowalik"",""E. Guziewicz"",""K. Kopalko"",""S. Yatsunenko"",""M. Godlewski"",""A. Wojcik"",""V. Osinniy"",""T. Krajewski"",""T. Story"",""E. usakowska"",""W. Paszkowicz""],[""Kim, E. H."",""Lee, D. H."",""Chung, B. H."",""Kim, H. S."",""Kim, Y."",""Noh, S. J.""],[""Park, S. H. K."",""Hwang, C. S."",""Jeong, H. Y."",""Chu, H. Y."",""Cho, K. I.""],[""Lim, S. J."",""Kwon, S. J."",""Kim, H.""],[""David M. King"",""Xinhua Liang"",""Casey S. Carney"",""Luis F. Hakim"",""Peng Li"",""Alan W. Weimer""],[""Kim, H. W."",""Shim, S. H."",""Lee, J. W.""],[""Kim, H. W."",""Lee, J. W."",""Shim, S. H.""],[""E. Guziewicz"",""I. A. Kowalik"",""M. Godlewski"",""K. Kopalko"",""V. Osinniy"",""A. Wojcik"",""S. Yatsunenko"",""E. usakowska"",""W. Paszkowicz"",""M. Guziewicz""],[""Jeon, Sunyeol"",""Bang, Seokhwan"",""Lee, Seungjun"",""Kwon, Semyung"",""Jeong, Wooho"",""Jeon, Hyeongtag"",""Chang, Ho Jung"",""Park, Hyung-Ho""],[""Guziewicz, E."",""Godlewski, M."",""Kopalko, K."",""Kowalik, I. A."",""Yatsunenko, S."",""Osinnyi, V."",""Paszkowicz, W."",""usakowska, E."",""Dluzewski, P.""],[""Hur, Jae-Sung"",""Jang, Samseok"",""Kim, Donghwan"",""Byun, Dongjin"",""Son, Chang-Sik""],[""Dunlop, L."",""Kursumovic, A."",""MacManus-Driscoll, J. L.""],[""Przezdziecka, E."",""Krajewski, T."",""Wachnicki, L."",""Szczepanik, A."",""W ojcik-Glodowska, A."",""Yatsunenko, S."",""usakowska, E."",""Paszkowicz, W."",""Guziewicz, E."",""Godlewski, M.""],[""Pung, Swee-Yong"",""Choy, Kwang-Leong"",""Hou, Xianghui"",""Shan, Chongxin""],[""Makino, Hisao"",""Kishimoto, Seiichi"",""Yamada, Takahiro"",""Miyake, Aki"",""Yamamoto, Naoki"",""Yamamoto, Tetsuya""],[""David M. King"",""Xinhua Liang"",""Peng Li"",""Alan W. Weimer""],[""Guziewicz, E."",""Godlewski, M."",""Krajewski, T. A."",""Wachnicki, L."",""uka, G."",""Paszkowicz, W."",""Domaga a, J. Z."",""Przezdziecka, E."",""usakowska, E."",""Witkowski, B. S.""],[""Godlewski, M."",""Guziewicz, E."",""uka, G."",""Krajewski, T."",""ukasiewicz, M."",""Wachnicki, L."",""Wachnicka, A."",""Kopalko, K."",""Sarem, A."",""Dalati, B.""],[""Park, Jae Young"",""Choi, Sun-Woo"",""Lee, Jun-Won"",""Lee, Chongmu"",""Kim, Sang Sub""],[""Choi, Sun-Woo"",""Park, Jae Young"",""Kim, Sang Sub""],[""Przezdziecka, E."",""Wachnicki, L."",""Paszkowicz, W."",""usakowska, E."",""Krajewski, T."",""uka, G."",""Guziewicz, E."",""Godlewski, M.""],[""Kowalik, I. A."",""Guziewicz, E."",""Kopalko, K."",""Yatsunenko, S."",""W ojcik-Glodowska, A."",""Godlewski, M."",""Dluzewski, P."",""usakowska, E."",""Paszkowicz, W.""],[""Shan, C. X."",""Zhang, J. Y."",""Yao, B."",""Shen, D. Z."",""Fan, X. W."",""Choy, K. L.""],[""Alessandri, I."",""Zucca, M."",""Ferroni, M."",""Bontempi, E."",""Depero, L. E.""],[""Krajewski, T."",""Guziewicz, E."",""Godlewski, M."",""Wachnicki, L."",""Kowalik, I. A."",""W ojcik-Glodowska, A."",""ukasiewicz, M."",""Kopalko, K."",""Osinniy, V."",""Guziewicz, M.""],[""Grigoras, K."",""Airaksinen, V. -M."",""Franssila, S.""],[""Janik, E."",""Wachnicka, A."",""Guziewicz, E."",""Godlewski, M."",""Kret, S."",""Zaleszczyk, W."",""Dynowska, E."",""Presz, A."",""Karczewski, G."",""Wojtowicz, T.""],[""Lim, S. J."",""Kim, Jae-Min"",""Kim, Doyoung"",""Kwon, Soonju"",""Park, Jin-Seong"",""Kim, Hyungjun""],[""Guziewicz, Elzbieta"",""Godlewski, Marek"",""Krajewski, Tomasz A."",""Wachnicki, Lukasz"",""uka, Grzegorz"",""Domaga a, Jaroslaw Z."",""Paszkowicz, Wojciech"",""Kowalski, Bogdan J."",""Witkowski, Bardlomiej S."",""Du zy nska, Anna"",""Suchocki, Andrzej""],[""Min, Yo-Sep"",""An, Cheng Jin"",""Kim, Seong Keun"",""Song, Jaewon"",""Hwang, Cheol Seong""],[""Kuo, Fang Ling"",""Lin, Ming-Te"",""Mensah, Benedict A."",""Scharf, Thomas W."",""Shepherd, Nigel D.""],[""G. uka"",""P. Stakhira"",""V. Cherpak"",""D. Volynyuk"",""Z. Hotra"",""M. Godlewski"",""E. Guziewicz"",""B. Witkowski"",""W. Paszkowicz"",""A. Kostruba""],[""Yuan-Ming Chang"",""Sheng-Rui Jian"",""Hsin-Yi Lee"",""Chih-Ming Lin"",""Jenh-Yih Juang""],[""uka, Grzegorz"",""Krajewski, Tomasz"",""Wachnicki, Lukasz"",""Witkowski, Bartlomiej"",""usakowska, Elzbieta"",""Paszkowicz, Wojciech"",""Guziewicz, Elzbieta"",""Godlewski, Marek""],[""Chang, Yung-Huang"",""Wang, Shun-Min"",""Liu, Chien-Min"",""Chen, Chih""],[""Shih, Y. T."",""Chiu, C. Y."",""Chang, C. W."",""Yang, J. R."",""Shiojiri, M."",""Chen, M. J.""],[""Narayan, Roger J."",""Adiga, Shashishekar P."",""Pellin, Michael J."",""Curtiss, Larry A."",""Hryn, Alexander J."",""Stafslien, Shane"",""Chisholm, Bret"",""Shih, Chun-Che"",""Shih, Chun-Ming"",""Lin, Shing-Jong"",""Su, Yea-Yang"",""Jin, Chunming"",""Zhang, Junping"",""Monteiro-Riviere, Nancy A."",""Elam, Jeffrey W.""],[""J. Malm"",""E. Sahramo"",""J. Per al a"",""T. Sajavaara"",""M. Karppinen""],[""Won, Sanghee"",""Go, Seunghee"",""Lee, Wonhee"",""Jeong, Kyunghoon"",""Jung, Hyunsuk"",""Lee, Chongmu"",""Lee, Eungu"",""Lee, Jaegab""],[""Choi, B. J."",""Jeong, D. S."",""Kim, S. K."",""Rohde, C."",""Choi, S."",""Oh, J. H."",""Kim, H. J."",""Hwang, C. S."",""Szot, K."",""Waser, R."",""Reichenberg, B."",""Tiedke, S.""],[""Wu, Mong-Kai"",""Chen, Miin-Jang"",""Tsai, Feng-Yu"",""Yang, Jer-Ren"",""Shiojiri, Makoto""]]","[2007,2008,2009,2009,2008,1994,2009,2009,2004,2005,2005,2005,2006,2006,2006,2007,2007,2007,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2008,2009,2009,2009,2009,2009,2009,2009,2009,2009,2009,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2010,2011,2008,2005,2010]","[""Prog. Photovoltaics"",""Appl. Phys. Lett."",""ACS Nano"",""Phys. Chem. Chem. Phys."",""Thin Solid Films"",""Appl. Surf. Sci."",""J. Appl. Phys."",""Thin Solid Films"",""J. Mater. Sci."",""Jpn. J. Appl. Phys."",""Appl. Phys. Lett."",""Thin Solid Films"",""J. Appl. 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Shiojiri, Thin Solid Films 519, 536 (2010).""]" +,ZnEt2,H2O,"GaN/Al2O3e, p-GaNe, YSZ",,180–300,,,,,"1162, 1202, 1225, 1242, 1244, and 1248","[1162,1202,1225,1242,1244,1248]","[""10.1002/pssb.200983687"",""10.1016/j.jcrysgro.2006.10.139"","""",""10.1016/j.tsf.2009.12.030"",""10.1109/JQE.2009.2025250"",""10.1002/pssb.200983699""]","[""Comparison of dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by atomic layer deposition method"",""Atomic layer deposition of epitaxial ZnO on GaN and YSZ"",""ZnO by ALD - Advantages of the Material Grown at Low Temperature"",""Monocrystalline zinc oxide films grown by atomic layer deposition"",""UV Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition"",""Zinc oxide grown by atomic layer deposition - a material for novel 3D electronics""]","[[""Wachnicki, L."",""ukasiewicz, M."",""Witkowski, B."",""Krajewski, T."",""uka, G."",""Kopalko, K."",""Minikayev, R."",""Przezdziecka, E."",""Domaga a, J. Z."",""Godlewski, M."",""Guziewicz, E.""],[""Lin, Chih-Wei"",""Ke, Dong-Jie"",""Chao, Yen-Cheng"",""Chang, Li"",""Liang, Mei-Hui"",""Ho, Yen-Teng""],[""Guziewicz, E."",""Godlewski, M."",""Krajewski, T. A."",""Wachnicki, L."",""uka, G."",""Paszkowicz, W."",""Domaga a, J. Z."",""Przezdziecka, E."",""usakowska, E."",""Witkowski, B. S.""],[""Wachnicki, L."",""Krajewski, T."",""uka, G."",""Witkowski, B."",""Kowalski, B."",""Kopalko, K."",""Domaga a, J. Z."",""Guziewicz, M."",""Godlewski, M."",""Guziewicz, E.""],[""Chen, Hsing-Chao"",""Chen, Miin-Jang"",""Wu, Mong-Kai"",""Li, Wei-Chih"",""Tsai, Hung-Ling"",""Yang, Jer-Ren"",""Kuan, Hon"",""Shiojiri, Makoto""],[""Guziewicz, Elzbieta"",""Godlewski, Marek"",""Krajewski, Tomasz A."",""Wachnicki, Lukasz"",""uka, Grzegorz"",""Domaga a, Jaroslaw Z."",""Paszkowicz, Wojciech"",""Kowalski, Bogdan J."",""Witkowski, Bardlomiej S."",""Du zy nska, Anna"",""Suchocki, Andrzej""]]","[2010,2007,2009,2010,2010,2010]","[""Phys. Status Solidi B"",""J. Cryst. 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Status Solidi B 247, 1611 (2010).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_034_table_025/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_034_table_025/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..f6268602b03a1cba643b8b88f98fe7bad7fee96c --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_034_table_025/gold.csv @@ -0,0 +1,27 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,ZnEt2,H2O,"silica, Bi2O3",150–200,150–200,,,,,"1149, 1211, and 1239","[1149,1211,1239]","["""","""",""10.1016/j.ssc.2008.11.037""]","[""Conformal ZnO coatings on high surface area silica gel using atomic layer deposition"",""Thermochemistry of nanoparticles on a substrate: Zinc oxide on amorphous silica"",""Preparation of one dimensional Bi2O3-core/ZnO-shell structures by thermal evaporation and atomic layer deposition""]","[[""Libera, J. A."",""Elam, J. W."",""Pellin, M. J.""],[""Shvareva, T. Y."",""Ushakov, S. V."",""Navrotsky, A."",""Libera, J. A."",""Elam, J. W.""],[""Park, Sunghoon"",""Jun, Jina"",""Kim, Hoyun Woo"",""Lee, Chongmu""]]","[2008,2008,2009]","[""Thin Solid Films"",""J. Mater. Res."",""Solid State Commun.""]","[""J. A. Libera, J. W. Elam, and M. J. Pellin, Thin Solid Films 516, 6158 (2008)."",""T. Y. Shvareva, S. V. Ushakov, A. Navrotsky, J. A. Libera, and J. W. Elam, J. Mater. Res. 23, 1907 (2008)."",""S. Park, J. Jun, H. W. Kim, and C. Lee, Solid State Commun. 149, 315 (2009).""]" +,ZnEt2,H2O⚡,SiO2,,100–250,,,,,1266,[1266],"[""""]","[""Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth""]","[[""Kwon, Sung-Ku"",""Kim, Dae-Woon"",""Jung, Yong-Ho"",""Lee, Bong-Ju""]]",[2009],"[""J. Korean Phys. Soc.""]","[""S.-K. Kwon, D.-W. Kim, Y.-H. Jung, and B.-J. Lee, J. Korean Phys. Soc. 55, 999 (2009).""]" +,ZnEt2,H2O-O2,Al2O3,,180,,,,,1186,[1186],"[""""]","[""Controlling preferred orientation of ZnO thin films by atomic layer deposition""]","[[""S.-H. K. Park"",""Y. E. Lee""]]",[2004],"[""J. Mater. Sci.""]","[""S.-H. K. Park and Y. E. Lee, J. Mater. Sci. 39, 2195 (2004).""]" +,ZnEt2,H2O,Sapphire(0001)e,,600,,,,,1181,[1181],"[""""]","[""Theoretical and experimental study of impact of electric field on the atomic layer epitaxy of ZnO on -� Al _2 O _3 surface""]","[[""C. H. Liu"",""R. P. H. Chang""]]",[2002],"[""J. Chem. Phys.""]","[""C. H. Liu and R. P. H. Chang, J. Chem. Phys. 116, 8139 (2002).""]" +,ZnEt2,H2O2,"TiO2, SiO2",,50–100,,,,,"1223, 1268, and 1269","[1223,1268,1269]","[""DOI: 10.1016/j.tsf.2008.05.026"",""10.1021/cg9000939"",""10.1088/0957-4484/20/19/195401""]","[""Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor"",""Crystal Phase Evolution in Quantum Confined ZnO Domains on Particles via Atomic Layer Deposition"",""Atomic layer deposition of quantum-confined ZnO nanostructures""]","[[""David M. King"",""Xinhua Liang"",""Peng Li"",""Alan W. Weimer""],[""King, David M."",""Li, Jianhua"",""Liang, Xinhua"",""Johnson, Samantha I."",""Channel, Melinda M."",""Weimer, Alan W.""],[""King, David M."",""Johnson, Samantha I."",""Li, Jianhua"",""Du, Xiaohua"",""Liang, Xinhua"",""Weimer, Alan W.""]]","[2008,2009,2009]","[""Thin Solid Films"",""Cryst. Growth Des."",""Nanotechnology""]","[""D. M. King, X. Liang, P. Li, and A. W. Weimer, Thin Solid Films 516, 8517 (2008)."",""D. M. King, J. Li, X. Liang, S. I. Johnson, M. M. Channel, and A. W. Weimer, Cryst. Growth Des. 9, 2828 (2009)."",""D. M. King, S. I. Johnson, J. Li, X. Du, X. Liang, and A. W. Weimer, Nanotechnology 20, 195401 (2009).""]" +,ZnEt2,H2O+NH3c,Al2O3,,200,,,,,292,[292],"[""10.1109/JDT.2009.2022770""]","[""Oxide Electronics by Spatial Atomic Layer Deposition""]","[[""Levy, David H."",""Nelson, Shelby F."",""Freeman, Diane""]]",[2009],"[""J. Display Technol.""]","[""D. H. Levy, S. F. Nelson, and D. Freeman, J. Disp. Technol. 5, 484 (2009).""]" +,ZnEt2,H2O+NH3 +O2c,Al2O3,,200,,,,,457,[457],"[""10.1021/jp105306r""]","[""Structure and Disorder in Amorphous Alumina Thin Films: Insights from High-Resolution Solid-State NMR""]","[[""Lee, Sung Keun"",""Park, Sun Young"",""Yi, Yoo Soo"",""Moon, Jaehyun""]]",[2010],"[""J. Phys. Chem. C""]","[""S. K. Lee, S. Y. Park, Y. S. Yi, and J. Moon, J. Phys. Chem. C 114, 13890 (2010).""]" +,ZnEt2,O3,"SiO2, TiO2",,170–300,,,,,"1193, 1208, and 1209","[1193,1208,1209]","["""","""",""""]","[""Comparison between ZnO films grown by atomic layer deposition using H _2 O or O _3 as oxidant"",""Atomic Layer Deposition of UV -Absorbing ZnO Films on SiO _2 and TiO _2 Nanoparticles Using a Fluidized Bed Reactor"",""Variation of ZnO shell thickness and its effects on the characteristics of coaxial nanowires""]","[[""S. K. Kim"",""C. S. Hwang"",""S.-H. K. Park"",""S. J. Yun""],[""David M. King"",""Xinhua Liang"",""Casey S. Carney"",""Luis F. Hakim"",""Peng Li"",""Alan W. Weimer""],[""Kim, H. W."",""Shim, S. H."",""Lee, J. W.""]]","[2005,2008,2008]","[""Thin Solid Films"",""Adv. Funct. Mater."",""Nanotechnology""]","[""S. K. Kim, C. S. Hwang, S. -H. K. Park, and S. J. Yun, Thin Solid Films 478, 103 (2005)."",""D. M. King, X. Liang, C. S. Carney, L. F. Hakim, P. Li, and A. W. Weimer, Adv. Funct. Mater. 18, 607 (2008)."",""H. W. Kim, S. H. Shim, and J. W. Lee, Nanotechnology 19, 145601 (2008).""]" +,ZnEt2,O2⚡,"H-Si, ZnO, ITO, Glass",,75–200,,,,,"1270–1272, 1274, and 2308","[1270,1271,1272,1274,2308]","["""",""10.1016/j.ssc.2008.09.034"",""10.1002/adma.200801470"",""10.1149/1.3322733"",""""]","[""Characteristics of ZnO thin films by means of plasma-enhanced atomic layer deposition"",""Effects of annealing temperature of buffer layer on structural and optical properties of ZnO thin film grown by atomic layer deposition"",""Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel"",""The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor"",""The electrical and physical analysis of Pt gate/Al2O3/p-Si (100) with dual high-k gate oxide thickness for deep submicron complementary metal-oxide-semiconductor device with low-power and high reliability""]","[[""Park, S. H. K."",""Hwang, C. S."",""Kwack, H. S."",""Lee, J. H."",""Chu, H. Y.""],[""Kim, C. R."",""Lee, J. Y."",""Shin, C. M."",""Leem, J. Y."",""Ryu, H."",""Chang, J. H."",""Lee, H. C."",""Son, C. S."",""Lee, W. J."",""Jung, W. G."",""Tan, S. T."",""Zhao, J. L."",""Sun, X. W.""],[""Park, Sang-Hee K."",""Hwang, Chi-Sun"",""Ryu, Minki"",""Yang, Shinhyuk"",""Byun, Chunwon"",""Shin, Joeheon"",""Lee, Jeong-Ik"",""Lee, Kimoon"",""Oh, Min Suk"",""Im, Seongil""],[""Lim, S. J."",""Kim, Jae-Min"",""Kim, Doyoung"",""Lee, Changsoo"",""Park, Jin-Seong"",""Kim, Hyungjun""],[""Lee, C."",""No, S. Y."",""Eom, N. I."",""Hwang, C. S."",""Kim, H. J.""]]","[2006,2008,2009,2010,2005]","[""Electrochem. Solid-State Lett."",""Solid State Commun."",""Adv. Mater."",""Electrochem. Solid-State Lett."",""J. Electron. Mater.""]","[""S. H. K. Park, C. S. Hwang, H. S. Kwack, J. H. Lee, and H. Y. Chu, Electrochem. Solid-State Lett. 9, G299 (2006)."",""C. R. Kim, J. Y. Lee, C. M. Shin, J. Y. Leem, H. Ryu, J. H. Chang, H. C. Lee, C. S. Son, W. J. Lee, W. G. Jung, S. T. Tan, J. L. Zhao, and X. W. Sun, Solid State Commun. 148, 395 (2008)."",""S. -H. K. Park, C.-S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J.-I. Lee, K. Lee, M. S. Oh, and S. Im, Adv. Mater. 21, 678 (2009)."",""S. J. Lim, J.-M. Kim, D. Kim, C. Lee, J.-S. Park, and H. Kim, Electrochem. Solid-State Lett. 13, H151 (2010)."",""C. Lee, S. Y. No, N. I. Eom, C. S. Hwang, and H. J. Kim, J. Electron. Mater. 34, 1104 (2005).""]" +,ZnEt2,O2⚡,PES,100,150–250,,,,,1275,[1275],"[""10.1016/j.cap.2009.07.032""]","[""Effects of O-2 plasma pre-treatment on ZnO thin films grown on polyethersulfone substrates at various deposition temperatures by atomic layer deposition""]","[[""Lee, J. Y."",""Shin, C. M."",""Heo, J. H."",""Kim, C. R."",""Park, J. H."",""Lee, T. M."",""Ryu, H."",""Son, C. S."",""Shin, B. C."",""Lee, W. J.""]]",[2010],"[""Curr. Appl. Phys.""]","[""J. Y. Lee, C. M. Shin, J. H. Heo, C. R. Kim, J. H. Park, T. M. Lee, H. Ryu, C. S. Son, B. C. Shin, and W. J. Lee, Curr. Appl. Phys. 10, S290 (2010).""]" +,ZnEt2,N2O,"Al2O3, Sapphire(11-20)/ZnO buffer",,300–600,,,,,1276 and 1278,"[1276,1278]","["""",""10.1007/s10854-009-9861-z""]","[""Optical and structural characteristics of ZnO films grown on (0001) sapphire substrates by ALD using DEZn and N2O"",""Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O""]","[[""Lin, P. Y."",""Gong, J. R."",""Li, P. C."",""Lin, T. Y."",""Lyu, D. Y."",""Lin, D. Y."",""Lin, H. J."",""Li, T. C."",""Chang, K. J."",""Lin, W. J.""],[""Yen, Kuo-Yi"",""Liu, Kuang-Pi"",""Gong, Jyh-Rong"",""Tsai, Kuen-Yau"",""Lyu, Dong-Yuan"",""Lin, Tai-Yuan"",""Ni, Guo-Yu"",""Jih, Far-Wen""]]","[2008,2009]","[""J. Cryst. Growth"",""J. Mater. Sci.: Mater. Electron.""]","[""P. Y. Lin, J. R. Gong, P. C. Li, T. Y. Lin, D. Y. Lyu, D. Y. Lin, H. J. Lin, T. C. Li, K. J. Chang, and W. J. Lin, J. Cryst. Growth 310, 3024 (2008)."",""K.-Y. Yen, K.-P. Liu, J.-R. Gong, K.-Y. Tsai, D.-Y. Lyu, T.-Y. Lin, G.- Y. Ni, and F.-W. Jih, J. Mater. Sci.: Mater. Electron. 20, 1255 (2009).""]" +,ZnEt2,N2O⚡,Al2O3,,200,,,,,458,[458],"[""""]","[""Stable ZnO thin film transistors by fast open air atomic layer deposition - art. no. 192101""]","[[""Levy, D. H."",""Freeman, D."",""Nelson, S. F."",""Cowdery-Corvan, P. J."",""Irving, L. M.""]]",[2008],"[""Appl. Phys. Lett.""]","[""D. H. Levy, D. Freeman, S. F. Nelson, P. J. Cowdery-Corvan, and L. M. Irving, Appl. Phys. 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Ferroelectr. 74, 181 (2005).""]" +Y2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Y(Cp)3,H2O,Si,,250–400,,,,,1515,[1515],"[""10.1149/1.1668906""]","[""Plasma-Enhanced Atomic Layer Deposition of SrTa _2 O _6 Thin Films Using Sr[Ta(OC _2 H _5 ) _5 (OC _2 H _4 OCH _3 )] _2 as Precursor""]","[[""Woong-Chul Shin"",""Sang-Ouk Ryu"",""In-Kyu You"",""Byoung-Gon Yu"",""Won-Jae Lee"",""Kyu-Jeong Choi"",""Soon-Gil Yoon""]]",[2004],"[""J. Electrochem. Soc.""]","[""W.-C. Shin, S.-O. Ryu, I.-K. You, B.-G. Yu, W.-J. Lee, K.-J. Choi, and S.-G. Yoon, J. Electrochem. Soc. 151, C292 (2004).""]" +,Y(CpMe)3,H2O,Si,,200–400,,,,,1515,[1515],"[""10.1149/1.1668906""]","[""Plasma-Enhanced Atomic Layer Deposition of SrTa _2 O _6 Thin Films Using Sr[Ta(OC _2 H _5 ) _5 (OC _2 H _4 OCH _3 )] _2 as Precursor""]","[[""Woong-Chul Shin"",""Sang-Ouk Ryu"",""In-Kyu You"",""Byoung-Gon Yu"",""Won-Jae Lee"",""Kyu-Jeong Choi"",""Soon-Gil Yoon""]]",[2004],"[""J. Electrochem. Soc.""]","[""W.-C. Shin, S.-O. Ryu, I.-K. You, B.-G. Yu, W.-J. Lee, K.-J. Choi, and S.-G. Yoon, J. Electrochem. Soc. 151, C292 (2004).""]" +,Y(CpEt)3,H2O,Si,,250,,,,,1522,[1522],"[""10.1149/1.3020763""]","[""Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO2 Films""]","[[""Niinist o, Jaakko"",""Kukli, Kaupo"",""Sajavaara, Timo"",""Ritala, Mikko"",""Leskel a, Markku"",""Oberbeck, Lars"",""Sundqvist, Jonas"",""Schr oder, Uwe""]]",[2009],"[""Electrochem. Solid-State Lett.""]","[""J. Niinist€o, K. Kukli, T. Sajavaara, M. Ritala, M. Leskel€a, L. Oberbeck, J. Sundqvist, and U. Schr€oder, Electrochem. Solid-State Lett. 12, G1 (2009).""]" +,Y(thd)3,O2,"Si, SLG, Corning 7059",,425–600,,,,,1524,[1524],"[""10.1149/1.3156833""]","[""Composition-Structure-Dielectric Property of Yttrium-Doped Hafnium Oxide Films Deposited by Atomic Layer Deposition""]","[[""Tao, Qian"",""Jursich, Gregory"",""Majumder, Prodyut"",""Singh, Manish"",""Walkosz, Weronika"",""Gu, Peter"",""Klie, Robert"",""Takoudis, Christos""]]",[2009],"[""Electrochem. Solid-State Lett.""]","[""Q. Tao, G. Jursich, P. Majumder, M. Singh, W. Walkosz, P. Gu, R. Klie, and C. Takoudis, Electrochem. 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Phys. 100, 073512 (2006).""]" +,Y(iPrAMD)3,H2O,H-Si,,280,,,,,683,[683],"[""""]","[""Surface-controlled deposition of Sc _2 O _3 thin films by atomic layer epitaxy using eta -diketonate and organometallic precursors""]","[[""M. Putkonen"",""M. Nieminen"",""J. Niinist o"",""L. Niinist o""]]",[2001],"[""Chem. Mater.""]","[""M. Putkonen, M. Nieminen, J. Niinist€o, and L. Niinist€o, Chem. Mater. 13, 4701 (2001).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_035_table_026/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_035_table_026/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..03920383b5b95d65bdb0d4eb304300c748b6104d --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_035_table_026/gold.csv @@ -0,0 +1,36 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +ZrO2,,,,Amorphous,Cubic,Tetragonal,Monoclinic,Orthorhombic,,,[],[],[],[],[],[],[] +,ZrCl4,H2O,"SLG, SiO2",300–500,,,,,,"128, 1536, and 1555","[128,1536,1555]","["""","""",""""]","[""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Controlled growth of yttrium oxysulphide thin films by atomic layer deposition"",""Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO _2 gate dielectrics on Si""]","[[""R. Matero"",""A. Rahtu"",""M. Ritala"",""M. Leskela"",""T. Sajavaara""],[""K. Kukli"",""M. Peussa"",""L.-S. Johansson"",""E. Nyk anen"",""L. Niinist o""],[""J. Okabayashi"",""S. Toyoda"",""H. Kumigashira"",""M. Oshima"",""K. Usuda"",""M. Niwa"",""G. L. Liu""]]","[2000,1999,2004]","[""Thin Solid Films"",""Mater. Sci. Forum"",""Appl. Phys. Lett.""]","[""R. Matero, A. Rahtu, M. Ritala, M. Leskel€a, and T. Sajavaara, Thin Solid Films 368, 1 (2000)."",""K. Kukli, M. Peussa, L.-S. Johansson, E. Nyk€anen, and L. Niinist€o, Mater. Sci. Forum 315–317, 216 (1999)."",""J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Usuda, M. Niwa, and G. L. Liu, Appl. Phys. Lett. 85, 5959 (2004).""]" +,ZrCl4,H2O,"Ta2O5, TaxNbyOz",300,300,300,,,,1563,[1563],"[""""]","[""Physical and electrical properties of hafnium-zirconium-oxide films grown by atomic layer deposition""]","[[""Bang, S."",""Lee, S."",""Jeon, S."",""Kwon, S."",""Jeong, W."",""Kim, S."",""Jeon, H.""]]",[2008],"[""J. Electrochem. 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Dai, Nature Mater. 1, 241 (2002).""]" +,ZrCl4,H2O,"Si, SLG",160–325,,250–350,300–350,,,"85, 1549, 1558, 1559, and 1561","[85,1549,1558,1559,1561]","["""","""","""","""",""""]","[""Properties of Ta _2 O _3 -based dielectric nanolaminates deposited by atomic layer epitaxy"",""Local epitaxial growth of ZrO _2 on Ge 100 substrates by atomic layer epitaxy"",""Raman and Brillouin scattering spectroscopy studies of atomic layer-deposited ZrO2 and kHfO(2) thin films"",""Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films"",""Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films""]","[[""K. Kukli"",""J. Ihanus"",""M. Ritala"",""M. Leskel a""],[""H. Kim"",""C. O. Chui"",""K. C. Saraswat"",""P. C. McIntyre""],[""Tkachev, S. N."",""Manghnani, M. H."",""Niilisk, A."",""Aarik, J."",""M andar, H.""],[""Tkachev, S. N."",""Manghnani, M. 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Res. 20, 3125 (2005).""]" +,ZrCl4,H2O,(Nb1-xTax)2O5,,,,325,,,1539,[1539],"[""""]","[""""]",[[]],[null],"[""""]","[""K. Kukli, M. Ritala, and M. Leskel€a, Nanostruct. Mater. 8, 785 (1997).""]" +,ZrCl4,H2O,Ge(100)e,,300,300,,,,1547,[1547],"[""""]","[""Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition""]","[[""K. Kukli"",""M. Ritala"",""J. Aarik"",""T. Uustare"",""M. Leskel a""]]",[2002],"[""J. Appl. Phys.""]","[""K. Kukli, M. Ritala, J. Aarik, T. Uustare, and M. Leskel€a, J. Appl. Phys. 92, 1833 (2002).""]" +,ZrCl4,H2O2,H-Si,160–450,180–210,210–600,300–600,,,1544 and 1545,"[1544,1545]","["""",""""]","[""Synthesis of ZrO _2 thin films by atomic layer deposition: growth kinetics, structural and electrical properties"",""High- appa dielectrics for advanced carbon-nanotube transistors and logic gates""]","[[""M. Cassir"",""F. Goubina"",""C. Bernay"",""P. Vernoux"",""D. Lincot""],[""A. Javey"",""H. Kim"",""M. Brink"",""Q. Wang"",""A. Ural"",""J. Guo"",""P. McIntyre"",""P. McEuen"",""M. Lundstrom"",""H. J. Dai""]]","[2002,2002]","[""Appl. Surf. Sci."",""Nat. Mater.""]","[""M. Cassir, F. Goubina, C. Bernay, P. Vernoux, and D. Lincot, Appl. Surf. Sci. 193, 120 (2002)."",""A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. J. Dai, Nature Mater. 1, 241 (2002).""]" +,ZrI4,H2O+H2O2,H-Si,272,272–350,272–350,,,,1569,[1569],"[""""]","[""Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide""]","[[""K. Kukli"",""K. Forsgren"",""J. Aarik"",""T. Uustare"",""A. Aidla"",""A. Niskanen"",""M. Ritala"",""M. Leskel a"",""A. H rsta""]]",[2001],"[""J. Cryst. Growth""]","[""K. Kukli, K. Forsgren, J. Aarik, T. Uustare, A. Aidla, A. Niskanen, M. Ritala, M. Leskel€a, and A. Ha˚rsta, J. Cryst. Growth 231, 262 (2001).""]" +,ZrI4,H2O+H2O2,H-Si,250,250–275,325–500,325–500,,,1568,[1568],"[""""]","[""Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors""]","[[""K. Kukli"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2002],"[""Thin Solid Films""]","[""K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Thin Solid Films 416, 72 (2002).""]" +,ZrI4,H2O+H2O2,H-Si,,250–300,325–500,500,,,1567,[1567],"[""""]","[""Self-limiting growth of ZrO _2 films on a Si (100) substrate using ZrCl _4 and O _2 under atmospheric pressure""]","[[""N. Takahashi"",""N. Yoshii"",""S. Nonobe"",""T. Nakamura"",""M. Yoshioka""]]",[2003],"[""J. Electron. Mater.""]","[""N. Takahashi, N. Yoshii, S. Nonobe, T. Nakamura, and M. Yoshioka, J. Electron. Mater. 32, 1107 (2003).""]" +,ZrI4,H2O+H2O2,"H-Si, Pt",,250,250–500,250–500,,,1570,[1570],"[""""]","[""Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor""]","[[""K. Kukli"",""K. Forsgren"",""M. Ritala"",""M. Leskel a"",""J. Aarik"",""A. H rsta""]]",[2001],"[""J. Electrochem. Soc.""]","[""K. Kukli, K. Forsgren, M. Ritala, M. Leskel€a, J. Aarik, and A. Ha˚rsta, J. Electrochem. Soc. 148, F227 (2001).""]" +,Zr(tBuO)4,H2O,"Si, SLG, Corning 7059",175,,200–300,200–300,,,861 and 1588,"[861,1588]","["""",""""]","[""Zirconium doping in titanium oxide photocatalytic films prepared by atomic layer deposition"",""Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption and reaction for microelectromechanical devices""]","[[""Qiu, S. H."",""Starr, T. L.""],[""Nistorica, C."",""Liu, J. F."",""Gory, I."",""Skidmore, G. D."",""Mantiziba, F. M."",""Gnade, B. E."",""Kim, J.""]]","[2007,2005]","[""J. Electrochem. Soc."",""J. Vac. Sci. Technol., A""]","[""S. H. Qiu and T. L. Starr, J. Electrochem. Soc. 154, H472 (2007)."",""C. Nistorica, J. F. Liu, I. Gory, G. D. Skidmore, F. M. Mantiziba, B. E. Gnade, and J. Kim, J. Vac. Sci. Technol. A 23, 836 (2005).""]" +,Zr(tBuO)4,H2O,"Al2O3, PC",,,120–160,,,,273,[273],"[""""]","[""Template-directed gas-phase fabrication of oxide nanotubes""]","[[""Bae, C. D."",""Kim, S. Y."",""Ahn, B. Y."",""Kim, J. Y."",""Sung, M. M."",""Shin, H. J.""]]",[2008],"[""J. Mater. Chem.""]","[""C. D. Bae, S. Y. Kim, B. Y. Ahn, J. Y. Kim, M. M. Sung, and H. J. Shin, J. Mater. Chem. 18, 1362 (2008).""]" +,Zr(tBuO)4,H2O ☼,PET,20,,,,,,1594,[1594],"[""""]","[""Effects of various oxidizers on the ZrO _2 thin films deposited by atomic layer deposition""]","[[""D. Jeong"",""J. Lee"",""J. Kim""]]",[2004],"[""Integr. Ferroelectr.""]","[""D. Jeong, J. Lee, and J. Kim, Integr. Ferroelectr. 67, 41 (2004).""]" +,Zr(tBuO)2(dmae)2,H2O,SLG,190–240,340,340,290–340,,,1599,[1599],"[""""]","[""Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation""]","[[""K. Endo"",""T. Tatsumi""]]",[2003],"[""Jpn. J. Appl. Phys., Part 2""]","[""K. Endo and T. Tatsumi, Jpn. J. Appl. Phys., Part 2 42, L685 (2003).""]" +,Zr(dmae)4,H2O,"SLG, borosilicate",190–240,340,340,300–500,,,1587,[1587],"[""10.1039/b807205a""]","[""Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors""]","[[""Black, Kate"",""Aspinall, Helen C."",""Jones, Anthony C."",""Przybylak, Katarzyna"",""Bacsa, John"",""Chalker, Paul R."",""Taylor, Stephen"",""Zhao, Ce Zhou"",""Elliott, Simon D."",""Zydor, Aleksandra"",""Heys, Peter N.""]]",[2008],"[""J. Mater. Chem.""]","[""K. Black, H. C. Aspinall, A. C. Jones, K. Przybylak, J. Bacsa, P. R. Chalker, S. Taylor, C. Z. Zhao, S. D. Elliott, A. Zydor, and P. N. Heys, J. Mater. Chem. 18, 4561 (2008).""]" +,Zr(iPrO)2(dmae)2,H2O,"SLG, borosilicate",190–240,340,340,300–500,,,1587,[1587],"[""10.1039/b807205a""]","[""Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors""]","[[""Black, Kate"",""Aspinall, Helen C."",""Jones, Anthony C."",""Przybylak, Katarzyna"",""Bacsa, John"",""Chalker, Paul R."",""Taylor, Stephen"",""Zhao, Ce Zhou"",""Elliott, Simon D."",""Zydor, Aleksandra"",""Heys, Peter N.""]]",[2008],"[""J. Mater. Chem.""]","[""K. Black, H. C. Aspinall, A. C. Jones, K. Przybylak, J. Bacsa, P. R. Chalker, S. Taylor, C. Z. Zhao, S. D. Elliott, A. Zydor, and P. N. Heys, J. Mater. Chem. 18, 4561 (2008).""]" +,Zr(thd)4,O3,"Si, SLG",275–300,,,300–500,300–500,,1571,[1571],"[""""]","[""Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon""]","[[""K. Kukli"",""M. Ritala"",""T. Uustare"",""J. Aarik"",""K. Forsgren"",""T. Sajavaara"",""M. Leskel a"",""A. H rsta""]]",[2002],"[""Thin Solid Films""]","[""K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskel€a, and A. Ha˚rsta, Thin Solid Films 410, 53 (2002).""]" +,ZrCp2Me2,H2O,Si,,200–300 and 400–500,,200–500,200–500,,1574,[1574],"[""""]","[""Reactions of bis(cyclopentadienyl)zirconium dichloride with porous silica surface""]","[[""M. Kr oger-Laukkanen"",""M. Peussa"",""M. Leskel a"",""L. Niinist o""]]",[2002],"[""Appl. Surf. Sci.""]","[""M. Kr€oger-Laukkanen, M. Peussa, M. Leskel€a, and L. Niinist€o, Appl. Surf. Sci. 183, 290 (2002).""]" +,ZrCp2Me2,O3,"Si, SLG",250–300,,,300–500,250–500,,1571,[1571],"[""""]","[""Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon""]","[[""K. Kukli"",""M. Ritala"",""T. Uustare"",""J. Aarik"",""K. Forsgren"",""T. Sajavaara"",""M. Leskel a"",""A. H rsta""]]",[2002],"[""Thin Solid Films""]","[""K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskel€a, and A. Ha˚rsta, Thin Solid Films 410, 53 (2002).""]" +,ZrCp2Me(OMe),O3,Si,,,300,,,,1577,[1577],"[""10.1021/la0500732""]","[""In situ quadrupole mass spectrometry study of atomic-layer deposition of ZrO2 using Cp2Zr(CH3)(2) and water""]","[[""Niinisto, J."",""Rahtu, A."",""Putkonen, M."",""Ritala, M."",""Leskela, M."",""Niinisto, L.""]]",[2005],"[""Langmuir""]","[""J. Niinist€o, A. Rahtu, M. Putkonen, M. Ritala, M. Leskel€a, and L. Niinist€o, Langmuir 21, 7321 (2005).""]" +,ZrCp2Cl2,O3,"Si, SLG",250–300,,,250–500,275–500,,1571,[1571],"[""""]","[""Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon""]","[[""K. Kukli"",""M. Ritala"",""T. Uustare"",""J. Aarik"",""K. Forsgren"",""T. Sajavaara"",""M. Leskel a"",""A. H rsta""]]",[2002],"[""Thin Solid Films""]","[""K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskel€a, and A. Ha˚rsta, Thin Solid Films 410, 53 (2002).""]" +,ZrCp(NMe2)3,O3,Si,300,300,300,,,,1578,[1578],"[""""]","[""Structural and dielectric properties of thin ZrO _2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor""]","[[""J. Niinisto"",""M. Putkonen"",""L. Niinisto"",""K. Kukli"",""M. Ritala"",""M. Leskel a""]]",[2004],"[""J. Appl. Phys.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, K. Kukli, M. Ritala, and M. Leskel€a, J. Appl. Phys. 95, 84 (2004).""]" +,Zr(CpMe)2Me(OMe),H2O,Si,300,,,,,,2319,[2319],"[""""]","[""ZnO nanotube based dye-sensitized solar cells ZnO nanotube based dye-sensitized solar cells""]","[[""Martinson, A. B. F."",""Elam, J. W."",""Hupp, J. T."",""Pellin, M. J.""]]",[2007],"[""Nano Lett.""]","[""A. B. F. Martinson, J. W. Elam, J. T. Hupp, and M. J. Pellin, Nano Lett. 7, 2183 (2007).""]" +,Zr(CpMe)2Me(OtBu),H2O,Si,300,,,,,,2319,[2319],"[""""]","[""ZnO nanotube based dye-sensitized solar cells ZnO nanotube based dye-sensitized solar cells""]","[[""Martinson, A. B. F."",""Elam, J. W."",""Hupp, J. T."",""Pellin, M. J.""]]",[2007],"[""Nano Lett.""]","[""A. B. F. Martinson, J. W. Elam, J. T. Hupp, and M. J. Pellin, Nano Lett. 7, 2183 (2007).""]" +,Zr(CpMe)2Me2,H2O,Si,,350,350,350,350,,1579,[1579],"[""""]","[""Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films""]","[[""Jinesh, K. B."",""Besling, W. F. A."",""Tois, E."",""Klootwijk, J. H."",""Wolters, R."",""Dekkers, W."",""Kaiser, M."",""Bakker, F."",""Tuominen, M."",""Roozeboom, F.""]]",[2008],"[""Appl. Phys. Lett.""]","[""K. B. Jinesh, W. F. A. Besling, E. Tois, J. H. Klootwijk, R. Wolters, W. Dekkers, M. Kaiser, F. Bakker, M. Tuominen, and F. Roozeboom, Appl. Phys. Lett. 93, 062903 (2008).""]" +,Zr(CpMe)2Me2,O3,SiO2,300–400,300–400,300–400,300–400,300–400,,1580,[1580],"[""10.1116/1.3071844""]","[""Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition""]","[[""Kukli, Kaupo"",""Niinist o, Jaakko"",""Tamm, Aile"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2009],"[""J. Vac. Sci. Technol., B""]","[""K. Kukli, J. Niinist€o, A. Tamm, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 226 (2009).""]" +,Zr(CpMe)2Me(OMe),H2O,Si,,350,350,350,350,,1579,[1579],"[""""]","[""Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films""]","[[""Jinesh, K. B."",""Besling, W. F. A."",""Tois, E."",""Klootwijk, J. H."",""Wolters, R."",""Dekkers, W."",""Kaiser, M."",""Bakker, F."",""Tuominen, M."",""Roozeboom, F.""]]",[2008],"[""Appl. Phys. Lett.""]","[""K. B. Jinesh, W. F. A. Besling, E. Tois, J. H. Klootwijk, R. Wolters, W. Dekkers, M. Kaiser, F. Bakker, M. Tuominen, and F. Roozeboom, Appl. Phys. Lett. 93, 062903 (2008).""]" +,Zr(CpMe)2Me(OMe),O3,SiO2,300–400,300–400,300–400,300–400,300–400,,1580,[1580],"[""10.1116/1.3071844""]","[""Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition""]","[[""Kukli, Kaupo"",""Niinist o, Jaakko"",""Tamm, Aile"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2009],"[""J. Vac. Sci. Technol., B""]","[""K. Kukli, J. Niinist€o, A. Tamm, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 226 (2009).""]" +,Zr(CpMe)2Me(OMe),O3,SiO2,,300–350,300–350,300–350,,,1583 and 1584,"[1583,1584]","[""10.1116/1.3025865"",""""]","[""Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors"",""In Situ Reaction Mechanism Studies on Atomic Layer Deposition of ZrO2 from (CpMe)2Zr(OMe)Me and Water or Ozone""]","[[""Due nas, S."",""Cast an, H."",""Garc ia, H."",""G omez, A."",""Bail on, L."",""Kukli, K."",""Niinist o, J."",""Ritala, M."",""Leskel a, M.""],[""Knapas, Kjell"",""Ritala, Mikko""]]","[2009,2008]","[""J. Vac. Sci. Technol., B"",""Chem. Mater.""]","[""S. Due~nas, H. Cast\u0003an, H. Garc\u0003ıa, A. G\u0003omez, L. Bail\u0003on, K. Kukli, J. Niinist€o, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 389 (2009)."",""K. Knapas and M. Ritala, Chem. Mater. 20, 5698 (2008).""]" +,Zr(CpMe)(NMe2)3,O3,Si,300,300,300,,,,1578,[1578],"[""""]","[""Structural and dielectric properties of thin ZrO _2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor""]","[[""J. Niinisto"",""M. Putkonen"",""L. Niinisto"",""K. Kukli"",""M. Ritala"",""M. Leskel a""]]",[2004],"[""J. Appl. Phys.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, K. Kukli, M. Ritala, and M. Leskel€a, J. Appl. Phys. 95, 84 (2004).""]" +,Zr(CpEt)(NMe2)3,O3,Si,300,300,300,,,,1578,[1578],"[""""]","[""Structural and dielectric properties of thin ZrO _2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor""]","[[""J. Niinisto"",""M. Putkonen"",""L. Niinisto"",""K. Kukli"",""M. Ritala"",""M. Leskel a""]]",[2004],"[""J. Appl. Phys.""]","[""J. Niinist€o, M. Putkonen, L. Niinist€o, K. Kukli, M. Ritala, and M. Leskel€a, J. Appl. Phys. 95, 84 (2004).""]" +,Zr[(Me3Si)2N]2Cl2,H2O,H-Si,250,,,,,,1620,[1620],"[""10.1021/cm9005234""]","[""The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films""]","[[""Won, Seok-Jun"",""Kim, Ju-Youn"",""Choi, Gyu-Jin"",""Heo, Jaeyeong"",""Hwang, Cheol Seong"",""Kim, Hyeong Joon""]]",[2009],"[""Chem. Mater.""]","[""S.-J. Won, J.-Y. Kim, G.-J. Choi, J. Heo, C. S. Hwang, and H. J. Kim, Chem. Mater. 21, 4374 (2009).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_036_table_027/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_036_table_027/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..c7f01e17104aa0a9b510106d063a2061a8b5ef6b --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_036_table_027/gold.csv @@ -0,0 +1,35 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Zr(NMe2)4,H2O,Si,50,100–200,100–200,,,,1601 and 1602,"[1601,1602]","["""",""""]","[""Atomic layer deposition of ZrO _2 thin films using a new alkoxide precursor"",""ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition""]","[[""R. Matero"",""M. Ritala"",""M. Leskel a"",""A. C. Jones"",""P. A. Williams"",""J. F. Bickley"",""A. Steiner"",""T. J. Leedham"",""H. O. Davies""],[""Tak, Y."",""Yong, K.""]]","[2002,2005]","[""J. Non-Cryst. Solids"",""Surf. Rev. Lett.""]","[""R. Matero, M. Ritala, M. Leskel€a, A. C. Jones, P. A. Williams, J. F. Bickley, A. Steiner, T. J. Leedham, and H. O. Davies, J. Non-Cryst. Solids 303, 24 (2002)."",""Y. Tak and K. Yong, Surf. Rev. Lett. 12, 215 (2005).""]" +,Zr(NEtMe)4,H2O,Si,300,,,,,,1609,[1609],"[""10.1016/j.apsusc.2010.03.049""]","[""Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium""]","[[""Abermann, S."",""Henkel, C."",""Bethge, O."",""Pozzovivo, G."",""Klang, P."",""Bertagnolli, E.""]]",[2010],"[""Appl. Surf. Sci.""]","[""S. Abermann, C. Henkel, O. Bethge, G. Pozzovivo, P. Klang, and E. Bertagnolli, Appl. Surf. Sci. 256, 5031 (2010).""]" +,Zr(NEtMe)4,O3,TiN,,225–300,225–300,225–300,,,1612 and 1613,"[1612,1613]","["""",""""]","[""Impact of deposition processes on properties of atomic-layer-deposited hafnium zirconate high-k dielectrics"",""Physical and electrical properties of atomic-layer-deposited HfxZr1-xO2 with TEMAHf, TEMAZr, and ozone""]","[[""Triyoso, D. H."",""Hegde, R. I."",""Gregory, R.""],[""Triyoso, D. H."",""Gregory, R."",""Park, M."",""Wang, K."",""Lee, S. I.""]]","[2007,2008]","[""Electrochem. Solid-State Lett."",""J. Electrochem. Soc.""]","[""D. H. Triyoso, R. I. Hegde, and R. Gregory, Electrochem. Solid-State Lett. 10, H354 (2007)."",""D. H. Triyoso, R. Gregory, M. Park, K. Wang, and S. I. Lee, J. Electrochem. Soc. 155, H43 (2008).""]" +,Zr(NEtMe)4,O3,Si,275,,,,,,1614,[1614],"[""""]","[""Atomic layer deposition of ZrO2 thin films with high dielectric constant on TiN substrates""]","[[""Kim, S. K."",""Hwang, C. S.""]]",[2008],"[""Electrochem. Solid-State Lett.""]","[""S. K. Kim and C. S. Hwang, Electrochem. Solid-State Lett. 11, G9 (2008).""]" +,Zr(NEtMe)4,O2⚡,H-Si,,100–250,100–280,,,,1617 and 1619,"[1617,1619]","[""10.1016/j.tsf.2010.04.017"",""""]","[""Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal-insulator-metal capacitor"",""Effect of plasma on characteristics of zirconium oxide films deposited by plasma-enhanced atomic layer deposition""]","[[""Li, Ming-Yen"",""Tsai, Bin-Siang"",""Jiang, Pei-Chuen"",""Wu, Hsiao-Che"",""Wu, Yung-Hsien"",""Lin, Yu-Jen""],[""Yun, S. J."",""Lim, J. W."",""Lee, J. H.""]]","[2010,2005]","[""Thin Solid Films"",""Electrochem. Solid-State Lett.""]","[""M.-Y. Li, B.-S. Tsai, P.-C. Jiang, H.-C. Wu, Y.-H. Wu, and Y.-J. Lin, Thin Solid Films 518, 5272 (2010)."",""S. J. Yun, J. W. Lim, and J. H. Lee, Electrochem. Solid-State Lett. 8, F47 (2005).""]" +,Zr(NEt2)4,O2,"Si, Ge",300,,,,,,1607,[1607],"[""10.1149/1.3070617""]","[""Atomic Layer Deposition of ZrO2 and HfO2 Nanotubes by Template Replication""]","[[""Gu, Diefeng"",""Baumgart, Helmut"",""Namkoong, Gon"",""Abdel-Fattah, Tarek M.""]]",[2009],"[""Electrochem. Solid-State Lett.""]","[""D. Gu, H. Baumgart, G. Namkoong, and T. M. Abdel-Fattah, Electrochem. Solid-State Lett. 12, K25 (2009).""]" +,Zr(MeAMD)4,H2O,Si,300,,,,,,1609,[1609],"[""10.1016/j.apsusc.2010.03.049""]","[""Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium""]","[[""Abermann, S."",""Henkel, C."",""Bethge, O."",""Pozzovivo, G."",""Klang, P."",""Bertagnolli, E.""]]",[2010],"[""Appl. Surf. Sci.""]","[""S. Abermann, C. Henkel, O. Bethge, G. Pozzovivo, P. Klang, and E. Bertagnolli, Appl. Surf. Sci. 256, 5031 (2010).""]" +Nb2O5,,,,Amorphous,,,,,,,[],[],[],[],[],[],[] +,Nb(OEt)5,H2O,SLG,215–275,,,,,,1626,[1626],"[""""]","[""Crystallization in hafnia- and zirconia-based systems""]","[[""S. V. Ushakov"",""A. Navrotsky"",""Y. Yang"",""S. Stemmer"",""K. Kukli"",""M. Ritala"",""M. A. Leskel a"",""P. Fejes"",""A. Demkov"",""C. Wang"",""B.-Y. Nguyen"",""D. Triyoso"",""P. Tobin""]]",[2004],"[""Phys. Status Solidi B""]","[""S. V. Ushakov, A. Navrotsky, Y. Yang, S. Stemmer, K. Kukli, M. Ritala, M. A. Leskel€a, P. Fejes, A. Demkov, C. Wang, B.-Y. Nguyen, D. Triyoso, and P. Tobin, Phys. Status Solidi B 241, 2268 (2004).""]" +RuO2,,,,Amorphous,Rutile,,,,,,[],[],[],[],[],[],[] +,Ru(CpEt)2,O2,"Si, SiO2, TiN",,265–270,,,,,"1652, 1654, and 1692","[1652,1654,1692]","["""","""",""""]","[""Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen"",""Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer"",""High density Ru nanocrystal deposition for nonvolatile memory applications""]","[[""Sang-Joon Park"",""Woo-Hee Kim"",""W.J. Maeng"",""Y.S. Yang"",""C.G. Park"",""Hyungjun Kim"",""Kook-Nyung Lee"",""Suk-Won Jung"",""W.K. Seong""],[""O.-K. Kwon"",""J.-H. Kim"",""H.-S. Park"",""S.-W. Kang""],[""Farmer, D. B."",""Gordon, R. G.""]]","[2008,2004,2007]","[""Thin Solid Films"",""J. Electrochem. Soc."",""J. Appl. Phys.""]","[""S.-J. Park, W.-H. Kim, W. Maeng, Y. Yang, C. Park, H. Kim, K.-N. Lee, S.-W. Jung, and W. Seong, Thin Solid Films 516, 7345 (2008)."",""O.-K. Kwon, J.-H. Kim, H.-S. Park, and S.-W. Kang, J. Electrochem. Soc. 151, G109 (2004)."",""D. B. Farmer and R. G. Gordon, J. Appl. Phys. 101, 124503 (2007).""]" +,Ru(CpEt)2,O2,Ta2O5,,300–350,,,,,1687,[1687],"[""""]","[""Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd) _3 and Oxygen""]","[[""T. Aaltonen"",""M. Ritala"",""K. Arstila"",""J. Keinonen"",""M. Leskel a""]]",[2004],"[""Chem. Vap. Deposition""]","[""T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskel€a, Chem. Vap. Deposition 10, 215 (2004).""]" +,Ru(thd)2(cod),O2,Si,,290,,,,,1693,[1693],"[""""]","[""A new RuO4 solvent solution for pure ruthenium film depositions""]","[[""Gatineau, J."",""Yanagita, K."",""Dussarrat, C.""]]",[2006],"[""Microelectron. Eng.""]","[""J. Gatineau, K. Yanagita, and C. Dussarrat, Microelectron. Eng. 83, 2248 (2006).""]" +Rh2O3,,,,Amorphous,,,,,,,[],[],[],[],[],[],[] +,Rh(acac)3,O3,"Si, SLG",160–180,,,,,,1695,[1695],"[""10.1016/j.tsf.2009.12.063""]","[""Growth of RuO2 thin films by liquid injection atomic layer deposition""]","[[""Hu sekov a, K."",""Dobro cka, E."",""Rosov a, A."",""Solt ys, J."",""Satka, A."",""Fillot, F."",""Fr ohlich, K.""]]",[2010],"[""Thin Solid Films""]","[""K. Hu\u0004sekov\u0003a, E. Dobrocˇka, A. Rosov\u0003a, J. \u0004Solt\u0003ys, A. \u0004Satka, F. Fillot, and K. Fr€ohlich, Thin Solid Films 518, 4701 (2010).""]" +In2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,InCl3,H2O,SLG,,400–500,,,,,1753,[1753],"[""""]","[""Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry""]","[[""S. Dakshinamurthy"",""I. Bhat""]]",[1998],"[""J. Electron. Mater.""]","[""S. Dakshinamurthy and I. Bhat, J. Electron. Mater. 27, 521 (1998).""]" +,InCl3,H2O+H2O2,Corning 7059,,300–500,,,,,1757,[1757],"[""""]","[""Modifying ALE grown In _2 O _3 films by benzoyl fluoride pulses""]","[[""T. Asikainen"",""M. Ritala"",""W.-M. Li"",""R. Lappalainen"",""M. Leskel a""]]",[1997],"[""Appl. Surf. Sci.""]","[""T. Asikainen, M. Ritala, W.-M. Li, R. Lappalainen, and M. Leskel€a, Appl. Surf. Sci. 112, 231 (1997).""]" +,InCp,O3,"Si, glass, Al2O3",,200–450,,,,,1759 and 1760,"[1759,1760]","["""",""""]","[""Surface chemistry of In _2 O _3 deposition using In ( CH _3 ) _3 and H _2 O in a binary reaction sequence"",""Atomic layer deposition of In2O3 using cyclopentadienyl indium: A new synthetic route to transparent conducting oxide films""]","[[""A. W. Ott"",""J. M. Johnson"",""J. W. Klaus"",""S. M. George""],[""Elam, J. W."",""Martinson, A. B. F."",""Pellin, M. J."",""Hupp, J. T.""]]","[1997,2006]","[""Appl. Surf. Sci."",""Chem. Mater.""]","[""A. W. Ott, J. M. Johnson, J. W. Klaus, and S. M. George, Appl. Surf. Sci. 112, 205 (1997)."",""J. W. Elam, A. B. F. Martinson, M. J. Pellin, and J. T. Hupp, Chem. Mater. 18, 3571 (2006).""]" +,In(acac)3,H2O,Si,175,200–225,,,,,1761,[1761],"[""""]","[""Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors""]","[[""Elam, J.W."",""Baker, D.A."",""Martinson, A.B.F."",""Pellin, M.J."",""Hupp, J.T.""]]",[2008],"[""J. Phys. Chem. C""]","[""J. Elam, D. Baker, A. Martinson, M. Pellin, and J. Hupp, J. Phys. Chem. C 112, 1938 (2008).""]" +,In(acac)3,O3,Si,200,,,,,,1761,[1761],"[""""]","[""Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors""]","[[""Elam, J.W."",""Baker, D.A."",""Martinson, A.B.F."",""Pellin, M.J."",""Hupp, J.T.""]]",[2008],"[""J. Phys. Chem. C""]","[""J. Elam, D. Baker, A. Martinson, M. Pellin, and J. Hupp, J. Phys. Chem. C 112, 1938 (2008).""]" +SnO2,,,,Amorphous,Tetragonal,,,,,,[],[],[],[],[],[],[] +,SnCl4,H2O,Ga2O3,350,,,,,,1812,[1812],"[""DOI: 10.1016/j.ssc.2010.07.002""]","[""Influence of coating and thermal annealing on the structure and luminescence properties of CuO nanorods""]","[[""Changhyun Jin"",""Kyungjoon Baek"",""Sunghoon Park"",""Hyoun Woo Kim"",""Wan In Lee"",""Chongmu Lee""]]",[2010],"[""Solid State Commun.""]","[""C. Jin, K. Baek, S. Park, H. W. Kim, W. I. Lee, and C. Lee, Solid State Commun. 150, 1812 (2010).""]" +,SnCl4,H2O,"SiO2, Graphene",180–200,300–400,,,,,"747, 1802, and 1810","[747,1802,1810]","["""","""",""DOI: 10.1016/j.snb.2010.05.018""]","[""Atomic layer deposition of titanium dioxide from TiCl _4 and H _2 O : investigation of growth mechanism"",""Atomic force microscopy studies of SnO _2 thin film microstructures deposited by atomic layer epitaxy"",""Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensors""]","[[""J. Aarik"",""A. Aidla"",""H. Mandar"",""T. Uustare""],[""M. Utriainen"",""H. Lattu"",""H. Viirola"",""L. Niinist o"",""R. Resch"",""G. Friedbacher""],[""Antti J. Niskanen"",""Aapo Varpula"",""Mikko Utriainen"",""Gomathi Natarajan"",""David C. Cameron"",""Sergey Novikov"",""Veli-Matti Airaksinen"",""Juha Sinkkonen"",""Sami Franssila""]]","[2001,2000,2010]","[""Appl. Surf. Sci."",""Mikrochim. Acta"",""Sens. Actuators, B""]","[""J. Aarik, A. Aidla, H. M€andar, and T. Uustare, Appl. Surf. Sci. 172, 148 (2001)."",""M. Utriainen, H. Lattu, H. Viirola, L. Niinist€o, R. Resch, and G. Friedbacher, Mikrochim. Acta 133, 119 (2000)."",""A. J. Niskanen, A. Varpula, M. Utriainen, G. Natarajan, D. C. Cameron, S. Novikov, V.-M. Airaksinen, J. Sinkkonen, and S. Franssila, Sens. Actuators B 148, 227 (2010).""]" +,SnCl4,H2O,Si,,500,,,,,1369,[1369],"[""""]","[""Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy""]","[[""M. Nieminen"",""L. Niinisto"",""E. Rauhala""]]",[1996],"[""J. Mater. Chem.""]","[""M. Nieminen, L. Niinist€o, and E. Rauhala, J. Mater. Chem. 6, 27 (1996).""]" +,SnCl4,H2O,"ZnS, CuOx",350,,,,,,1808 and 1811,"[1808,1811]","[""10.1007/s00339-009-5154-x"",""10.1021/jp105852h""]","[""Influence of oxygen depletion layer on the properties of tin oxide gas-sensing films fabricated by atomic layer deposition"",""Non-Aqueous Approach to Synthesize Amorphous/Crystalline Metal Oxide-Graphene Nanosheet Hybrid Composites""]","[[""Natarajan, Gomathi"",""Cameron, David C.""],[""Meng, Xiangbo"",""Geng, Dongsheng"",""Liu, Jian"",""Banis, Mohammad Norouzi"",""Zhang, Yong"",""Li, Ruying"",""Sun, Xueliang""]]","[2009,2010]","[""Appl. Phys. A"",""J. Phys. Chem. C""]","[""G. Natarajan and D. C. Cameron, Appl. Phys. A 95, 621 (2009)."",""X. Meng, D. Geng, J. Liu, M. N. Banis, Y. Zhang, R. Li, and X. Sun, J. Phys. Chem. C 114, 18330 (2010).""]" +,SnCl4,H2O,"SLG, Corning 7059",,300–600,,,,,"1796, 1799, and 1801","[1796,1799,1801]","["""","""",""""]","[""Reaction of tin tetrachloride with silica gel"",""Deposition of tin oxide into porous silicon by atomic layer epitaxy"",""Transducer properties of AFM microprobes conformally covered by ALE -deposited SnO _2 thin films""]","[[""R. R. Rachkovskii"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""C. D ucs o"",""N. Q. Khanh"",""Z. Horv ath"",""I. B arsony"",""M. Utriainen"",""S. Lehto"",""M. Nieminen"",""L. Niinist o""],[""M. Utriainen"",""L. Niinist o"",""R. Matero""]]","[1970,1996,1999]","[""Zh. Neorg. Khim."",""J. Electrochem. Soc."",""Appl. Phys. A""]","[""R. R. Rachkovskii, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Neorg. Khim. 15, 3158 (1970) [Russ. J. Inorg. Chem. 15, 1646 (1970)]."",""C. D€ucs€o, N. Q. Khanh, Z. Horv\u0003ath, I. B\u0003arsony, M. Utriainen, S. Lehto, M. Nieminen, and L. Niinist€o, J. Electrochem. Soc. 143, 683 (1996)."",""M. Utriainen, L. Niinist€o, and R. Matero, Appl. Phys. A 68, 339 (1999).""]" +,SnCl4,H2O,Al2O3e,,400–600,,,,,1804 and 1805,"[1804,1805]","["""",""""]","[""Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD"",""Microstructure characterisation of ALD -grown epitaxial SnO _2 thin film""]","[[""T. Takeuchi"",""K. Shoji"",""T. Tadano"",""I. Doteshita"",""S. Onodera""],[""J. Lu"",""J. Sundqvist"",""M. Ottosson"",""A. Tarre"",""A. Rosental"",""J. Aarik"",""A. H rsta""]]","[2003,2004]","[""Thin Solid Films"",""J. Cryst. Growth""]","[""T. Takeuchi, K. Shoji, T. Tadano, I. Doteshita, and S. Onodera, Thin Solid Films 442, 98 (2003)."",""J. Lu, J. Sundqvist, M. Ottosson, A. Tarre, A. Rosental, J. Aarik, and A. Ha˚rsta, J. Cryst. Growth 260, 191 (2004).""]" +,SnCl4,H2O+O3 (hexane cat.),SLG,,500,,,,,1799,[1799],"[""""]","[""Deposition of tin oxide into porous silicon by atomic layer epitaxy""]","[[""C. D ucs o"",""N. Q. Khanh"",""Z. Horv ath"",""I. B arsony"",""M. Utriainen"",""S. Lehto"",""M. Nieminen"",""L. Niinist o""]]",[1996],"[""J. Electrochem. Soc.""]","[""C. D€ucs€o, N. Q. Khanh, Z. Horv\u0003ath, I. B\u0003arsony, M. Utriainen, S. Lehto, M. Nieminen, and L. Niinist€o, J. Electrochem. Soc. 143, 683 (1996).""]" +,SnCl4,H2O2,Si,150–430,,,,,,1816,[1816],"[""""]","[""SnO2 atomic layer deposition on ZrO2 and Al nanoparticles: Pathway to enhanced thermite materials""]","[[""Ferguson, J. D."",""Buechler, K. J."",""Weimer, A. W."",""George, S. M.""]]",[2005],"[""Powder Technol.""]","[""J. D. Ferguson, K. J. Buechler, A. W. Weimer, and S. M. George, Powder Technol. 156, 154 (2005).""]" +,SnCl4,H2O2,Al2O3e,,600–700,,,,,1804 and 1813,"[1804,1813]","["""",""10.1002/crat.200900648""]","[""Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD"",""Preparation, structure, and photoluminescence properties of Ga2O3/SnO2 coaxial nanowires""]","[[""T. Takeuchi"",""K. Shoji"",""T. Tadano"",""I. Doteshita"",""S. Onodera""],[""Jin, Changhyun"",""Kim, Hyunsoo"",""Baek, Kyungjoon"",""Kim, Hyoun Woo"",""Lee, Chongmu""]]","[2003,2010]","[""Thin Solid Films"",""Cryst. Res. Technol.""]","[""T. Takeuchi, K. Shoji, T. Tadano, I. Doteshita, and S. Onodera, Thin Solid Films 442, 98 (2003)."",""C. Jin, H. Kim, K. Baek, H. W. Kim, and C. Lee, Cryst. Res. Technol. 45, 199 (2010).""]" +,SnI4,H2O2,Al2O3e,,600,,,,,1804,[1804],"[""""]","[""Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD""]","[[""T. Takeuchi"",""K. Shoji"",""T. Tadano"",""I. Doteshita"",""S. Onodera""]]",[2003],"[""Thin Solid Films""]","[""T. Takeuchi, K. Shoji, T. Tadano, I. Doteshita, and S. Onodera, Thin Solid Films 442, 98 (2003).""]" +,SnI4,O2,SiO2,,400–750,,,,,1820,[1820],"[""""]","[""Nanoepitaxy of SnO _2 on - Al _2 O _3 (012)""]","[[""A. Tarre"",""A. Rosental"",""J. Sundqvist"",""A. H rsta"",""T. Uustare"",""V. Sammelselg""]]",[2003],"[""Surf. Sci.""]","[""A. Tarre, A. Rosental, J. Sundqvist, A. Ha˚rsta, T. Uustare, and V. Sammelselg, Surf. Sci. 532, 514 (2003).""]" +,SnI4,O2,Al2O3e,,400–750,,,,,"1804, 1813, 1820, and 1821","[1804,1813,1820,1821]","["""",""10.1002/crat.200900648"","""",""""]","[""Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD"",""Preparation, structure, and photoluminescence properties of Ga2O3/SnO2 coaxial nanowires"",""Nanoepitaxy of SnO _2 on - Al _2 O _3 (012)"",""Atomic Layer Deposition of Epitaxial and Polycrystalline SnO _2 Films from the SnI _4 /O _2 Precursor Combination""]","[[""T. Takeuchi"",""K. Shoji"",""T. Tadano"",""I. Doteshita"",""S. Onodera""],[""Jin, Changhyun"",""Kim, Hyunsoo"",""Baek, Kyungjoon"",""Kim, Hyoun Woo"",""Lee, Chongmu""],[""A. Tarre"",""A. Rosental"",""J. Sundqvist"",""A. H rsta"",""T. Uustare"",""V. Sammelselg""],[""J. Sundqvist"",""A. Tarre"",""A. Rosental"",""A. H rsta""]]","[2003,2010,2003,2003]","[""Thin Solid Films"",""Cryst. Res. Technol."",""Surf. Sci."",""Chem. Vap. Deposition""]","[""T. Takeuchi, K. Shoji, T. Tadano, I. Doteshita, and S. Onodera, Thin Solid Films 442, 98 (2003)."",""C. Jin, H. Kim, K. Baek, H. W. Kim, and C. Lee, Cryst. Res. Technol. 45, 199 (2010)."",""A. Tarre, A. Rosental, J. Sundqvist, A. Ha˚rsta, T. Uustare, and V. Sammelselg, Surf. Sci. 532, 514 (2003)."",""J. Sundqvist, A. Tarre, A. Rosental, and A. Ha˚rsta, Chem. Vap. Deposition 9, 21 (2003).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_037_table_028/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_037_table_028/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..7ada05b549e33d27c6884890e6189baa64970479 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_037_table_028/gold.csv @@ -0,0 +1,32 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Sn(NMe2)4,H2O2,"Si, glass",50–300,,,,,,1826,[1826],"[""10.1016/j.snb.2010.03.065""]","[""Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations""]","[[""Kim, Dai Hong"",""Kim, Won-Sik"",""Lee, Sung Bo"",""Hong, Seong-Hyeon""]]",[2010],"[""Sens. Actuators, B""]","[""D. H. Kim, W.-S. Kim, S. B. Lee, and S.-H. Hong, Sens. Actuators B 147, 653 (2010).""]" +,Sn(tbba),H2O2,"SiN, glass",,120,,,,,1828,[1828],"[""10.1021/jz100361f""]","[""Surface Modification of SnO2 Photoelectrodes in Dye-Sensitized Solar Cells: Significant Improvements in Photovoltage via Al2O3 Atomic Layer Deposition""]","[[""Prasittichai, Chaiya"",""Hupp, Joseph T.""]]",[2010],"[""J. Phys. Chem. Lett.""]","[""C. Prasittichai and J. T. Hupp, J. Phys. Chem. Lett. 1, 1611 (2010).""]" +,SnnBu2(OAc)2,O2⚡,"SiO2, TiO2k",,200–400,,,,,"1822, 1823, and 1825","[1822,1823,1825]","["""","""",""10.1088/0957-4484/21/24/245605""]","[""Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study"",""Characteristics of plasma-enhanced atomic-layer deposited (PEALD) SnO2 thin films"",""SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance""]","[[""Sundqvist, J."",""Lu, J."",""Ottosson, M."",""H rsta, A.""],[""Lee, W."",""Choi, Y."",""Hong, K."",""Kim, N. H."",""Park, Y."",""Park, J.""],[""Kim, Won-Sik"",""Lee, Byoung-Sun"",""Kim, Dai-Hong"",""Kim, Hong-Chan"",""Yu, Woong-Ryeol"",""Hong, Seong-Hyeon""]]","[2006,2005,2010]","[""Thin Solid Films"",""J. Korean Phys. Soc."",""Nanotechnology""]","[""J. Sundqvist, J. Lu, M. Ottosson, and A. Ha˚rsta, Thin Solid Films 514, 63 (2006)."",""W. Lee, Y. Choi, K. Hong, N. H. Kim, Y. Park, and J. Park, J. Korean Phys. Soc. 46, L756 (2005)."",""W.-S. Kim, B.-S. Lee, D.-H. Kim, H.-C. Kim, W.-R. Yu, and S.-H. Hong, Nanotechnology 21, 245605 (2010).""]" +Sb2O5,,,,Amorphous,,,,,,,[],[],[],[],[],[],[] +,Sb(NMe2)3,O3,Si,120,,,,,,1829,[1829],"[""10.1021/cm1011108""]","[""Low Temperature Atomic Layer Deposition of Tin Oxide""]","[[""Heo, Jaeyeong"",""Hock, Adam S."",""Gordon, Roy G.""]]",[2010],"[""Chem. Mater.""]","[""J. Heo, A. S. Hock, and R. G. Gordon, Chem. Mater. 22, 4964 (2010).""]" +BaO(Ba(OH)2)d,,,,Amorphous Ba(OH)2,Monoclinic Ba(OH)2,Orthorhombic Ba(OH)2,,,,,[],[],[],[],[],[],[] +,Ba(CptBu3)2,H2O,Al2O3,240,290–340,340,,,,1830,[1830],"[""10.1021/cm900623v""]","[""Atomic Layer Deposition of Antimony Oxide and Antimony Sulfide""]","[[""Bin Yang, Ren"",""Bachmann, Julien"",""Reiche, Manfred"",""Gerlach, Juergen W."",""G osele, Ulrich"",""Nielsch, Kornelius""]]",[2009],"[""Chem. Mater.""]","[""R. Bin Yang, J. Bachmann, M. Reiche, J. W. Gerlach, U. G€osele, and K. Nielsch, Chem. Mater. 21, 2586 (2009).""]" +La2O3,,,,Amorphous,Cubic,Hexagonal,Hexagonal La(OH)3,Monoclinic La(O)OH,,,[],[],[],[],[],[],[] +,La(thd)3,O3,"SLG, Si",200–300,300–450,400–450,,,,"44, 1088, and 1577","[44,1088,1577]","[""10.1039/b923490j"","""",""10.1021/la0500732""]","[""Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition"",""Growth of LaCoO _3 thin films from eta -diketonate precursors"",""In situ quadrupole mass spectrometry study of atomic-layer deposition of ZrO2 using Cp2Zr(CH3)(2) and water""]","[[""Aaltonen, Titta"",""Alnes, Mari"",""Nilsen, Ola"",""Costelle, Leila"",""Fjellv g, Helmer""],[""H. Seim"",""M. Nieminen"",""L. Niinist o"",""H. Fjellv g"",""L.-S. Johansson""],[""Niinisto, J."",""Rahtu, A."",""Putkonen, M."",""Ritala, M."",""Leskela, M."",""Niinisto, L.""]]","[2010,1997,2005]","[""J. Mater. Chem."",""Appl. Surf. Sci."",""Langmuir""]","[""T. Aaltonen, M. Alnes, O. Nilsen, L. Costelle, and H. Fjellva˚g, J. Mater. Chem. 20, 2877 (2010)."",""H. Seim, M. Nieminen, L. Niinist€o, H. Fjellva˚g, and L.-S. Johansson, Appl. Surf. Sci. 112, 243 (1997)."",""J. Niinist€o, A. Rahtu, M. Putkonen, M. Ritala, M. Leskel€a, and L. Niinist€o, Langmuir 21, 7321 (2005).""]" +,La(thd)3,O3,Corning 7059,200–300,300–350,400–450,,,,1088,[1088],"[""""]","[""Growth of LaCoO _3 thin films from eta -diketonate precursors""]","[[""H. Seim"",""M. Nieminen"",""L. Niinist o"",""H. Fjellv g"",""L.-S. Johansson""]]",[1997],"[""Appl. Surf. Sci.""]","[""H. Seim, M. Nieminen, L. Niinist€o, H. Fjellva˚g, and L.-S. Johansson, Appl. Surf. Sci. 112, 243 (1997).""]" +,La(thd)3,O3,Corning 7059,225–300,300–425,,,,,1833,[1833],"[""10.1021/cm902030d""]","[""Atomic Layer Deposition Growth of BaB2O4 Thin Films from an Exceptionally Thermally Stable Tris(pyrazolyl)borate-Based Precursor""]","[[""Saly, Mark J."",""Munnik, Frans"",""Baird, Ronald J."",""Winter, Charles H.""]]",[2009],"[""Chem. Mater.""]","[""M. J. Saly, F. Munnik, R. J. Baird, and C. H. Winter, Chem. Mater. 21, 3742 (2009).""]" +,La(thd)3,O3,SiO2l,,350–500,350–500,,,,1835,[1835],"[""""]","[""High-Temperature Oxidation of Ni Coated with La _2 O _3 by Atomic-Layer Chemical-Vapor Deposition ( ALCVD )""]","[[""R. Haugsrud"",""A. E. Gunnaes"",""O. Nilsen""]]",[2003],"[""Oxid. Met.""]","[""R. Haugsrud, A. E. Gunnaes, and O. Nilsen, Oxid. Met. 59, 215 (2003).""]" +,La(thd)3,O3,SiO2m,,350,,350,350,,1835,[1835],"[""""]","[""High-Temperature Oxidation of Ni Coated with La _2 O _3 by Atomic-Layer Chemical-Vapor Deposition ( ALCVD )""]","[[""R. Haugsrud"",""A. E. Gunnaes"",""O. Nilsen""]]",[2003],"[""Oxid. Met.""]","[""R. Haugsrud, A. E. Gunnaes, and O. Nilsen, Oxid. Met. 59, 215 (2003).""]" +,La(thd)3,H2O,"H-Si, TiN",230–350,,,,,,"237, 1836, and 1837","[237,1836,1837]","["""",""10.1116/1.3079632"",""""]","[""Effects of Al content on the electrical properties of LaxAlyOz films grown on TiN substrate by atomic layer deposition"",""Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer"",""Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition""]","[[""Kim, S. Y."",""Kwon, H."",""Jo, S. J."",""Ha, J. S."",""Park, W. T."",""Kang, D. K."",""Kim, B. H.""],[""Li, X. L."",""Tsoutsou, D."",""Scarel, G."",""Wiemer, C."",""Capelli, S. C."",""Volkos, S. N."",""Lamagna, L."",""Fanciulli, M.""],[""Park, N. K."",""Kang, D. K."",""Kim, B. H."",""Jo, S. J."",""Ha, J. S.""]]","[2007,2009,2006]","[""Appl. Phys. Lett."",""J. Vac. Sci. Technol., A"",""Appl. Surf. Sci.""]","[""S. Y. Kim, H. Kwon, S. J. Jo, J. S. Ha, W. T. Park, D. K. Kang, and B. H. Kim, Appl. Phys. Lett. 90, 103104 (2007)."",""X. L. Li, D. Tsoutsou, G. Scarel, C. Wiemer, S. C. Capelli, S. N. Volkos, L. Lamagna, and M. Fanciulli, J. Vac. Sci. Technol. A 27, L1 (2009)."",""N. K. Park, D. K. Kang, B. H. Kim, S. J. Jo, and J. S. Ha, Appl. Surf. Sci. 252, 8506 (2006).""]" +,La[N(SiMe3)2]3,H2O,H-Si,250,250,,,,,1838,[1838],"[""""]","[""5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties""]","[[""Jo, S. J."",""Ha, J. S."",""Park, N. K."",""Kang, D. K."",""Kim, B. H.""]]",[2006],"[""Thin Solid Films""]","[""S. J. Jo, J. S. Ha, N. K. Park, D. K. Kang, and B. H. Kim, Thin Solid Films 513, 253 (2006).""]" +,La[N(SiMe3)2]3,H2O,"H-Si, Si, borosilicate",200–400,,,,,,1840,[1840],"[""""]","[""Film properties of ALD HfO _2 and La _2 O _3 gate dielectrics grown on Si with various pre-deposition treatments""]","[[""D. H. Triyoso"",""R. I. Hegde"",""J. Grant"",""P. Fejes"",""R. Liu"",""D. Roan"",""M. Ramon"",""D. Werho"",""R. Rai"",""L. B. La"",""J. Baker"",""C. Garza"",""T. Guenther"",""B. E. White, Jr."",""P. J. Tobin""]]",[2004],"[""J. Vac. Sci. Technol., B""]","[""D. H. Triyoso, R. I. Hegde, J. Grant, P. Fejes, R. Liu, D. Roan, M. Ramon, D. Werho, R. Rai, L. B. La, J. Baker, C. Garza, T. Guenther, J. B. E. White, and P. J. Tobin, J. Vac. Sci. Technol. B 22, 2121 (2004).""]" +,La[N(SiMe3)2]3,H2O,Si,,,300,,,,1841,[1841],"[""""]","[""Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide films""]","[[""Kukli, K."",""Ritala, M."",""Pore, V."",""Leskel a, M."",""Sajavaara, T."",""Hegde, R. I."",""Gilmer, D. C."",""Tobin, P. J."",""Jones, A. C."",""Aspinall, H. C.""]]",[2006],"[""Chem. Vap. Deposition""]","[""K. Kukli, M. Ritala, V. Pore, M. Leskel€a, T. Sajavaara, R. I. Hegde, D. C. Gilmer, P. J. Tobin, A. C. Jones, and H. C. Aspinall, Chem. Vap. Deposition 12, 158 (2006).""]" +,La(Cp)3,H2O,SiO2l,,260,260,,,,1835,[1835],"[""""]","[""High-Temperature Oxidation of Ni Coated with La _2 O _3 by Atomic-Layer Chemical-Vapor Deposition ( ALCVD )""]","[[""R. Haugsrud"",""A. E. Gunnaes"",""O. Nilsen""]]",[2003],"[""Oxid. Met.""]","[""R. Haugsrud, A. E. Gunnaes, and O. Nilsen, Oxid. Met. 59, 215 (2003).""]" +,La(Cp)3,H2O,SiO2m,,,,260,,,1835,[1835],"[""""]","[""High-Temperature Oxidation of Ni Coated with La _2 O _3 by Atomic-Layer Chemical-Vapor Deposition ( ALCVD )""]","[[""R. Haugsrud"",""A. E. Gunnaes"",""O. Nilsen""]]",[2003],"[""Oxid. Met.""]","[""R. Haugsrud, A. E. Gunnaes, and O. Nilsen, Oxid. Met. 59, 215 (2003).""]" +,La(CpEt)3,O2⚡,Si,350,,350–400,,,,1847,[1847],"[""10.1016/j.mee.2008.09.033""]","[""Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing""]","[[""Tsoutsou, D."",""Scarel, G."",""Debernardi, A."",""Capelli, S. C."",""Volkos, S. N."",""Lamagna, L."",""Schamm, S."",""Coulon, P. E."",""Fanciulli, M.""]]",[2008],"[""Microelectron. Eng.""]","[""D. Tsoutsou, G. Scarel, A. Debernardi, S. C. Capelli, S. N. Volkos, L. Lamagna, S. Schamm, P. E. Coulon, and M. Fanciulli, Microelectron. Eng. 85, 2411 (2008).""]" +,La(CpiPr)3,O3,Si,200,,,200,,,1852,[1852],"[""""]","[""Improving threshold voltage and device performance of gate-first HfSiON/Metal gate n-MOSFETs by an ALD La2O3 capping layer""]","[[""Kamiyama, S."",""Kurosawa, E."",""Nara, Y.""]]",[2008],"[""J. Electrochem. Soc.""]","[""S. Kamiyama, E. Kurosawa, and Y. Nara, J. Electrochem. Soc. 155, H373 (2008).""]" +,La(CpiPr)3,O3,Ge,200,,,,,,1852,[1852],"[""""]","[""Improving threshold voltage and device performance of gate-first HfSiON/Metal gate n-MOSFETs by an ALD La2O3 capping layer""]","[[""Kamiyama, S."",""Kurosawa, E."",""Nara, Y.""]]",[2008],"[""J. Electrochem. Soc.""]","[""S. Kamiyama, E. Kurosawa, and Y. Nara, J. Electrochem. Soc. 155, H373 (2008).""]" +,La(iPrfAMD)3,O2,"Si, Ge",300,,,,,,1607,[1607],"[""10.1149/1.3070617""]","[""Atomic Layer Deposition of ZrO2 and HfO2 Nanotubes by Template Replication""]","[[""Gu, Diefeng"",""Baumgart, Helmut"",""Namkoong, Gon"",""Abdel-Fattah, Tarek M.""]]",[2009],"[""Electrochem. Solid-State Lett.""]","[""D. Gu, H. Baumgart, G. Namkoong, and T. M. Abdel-Fattah, Electrochem. Solid-State Lett. 12, K25 (2009).""]" +CeO2,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Ce(thd)4,O3,"SLG, Si",,175–250,,,,,1859,[1859],"[""""]","[""Atomic Layer Deposition of LaF _3 Thin Films using La(thd) _3 and TiF _4 as Precursors""]","[[""Tero Pilvi"",""Esa Puukilainen"",""Kai Arstila"",""Markku Leskel a"",""Mikko Ritala""]]",[2008],"[""Chem. Vap. Deposition""]","[""T. Pilvi, E. Puukilainen, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Vap. Deposition 14, 85 (2008).""]" +,Ce(thd)3phen,O3,"SLG, Si",,225–275,,,,,1859,[1859],"[""""]","[""Atomic Layer Deposition of LaF _3 Thin Films using La(thd) _3 and TiF _4 as Precursors""]","[[""Tero Pilvi"",""Esa Puukilainen"",""Kai Arstila"",""Markku Leskel a"",""Mikko Ritala""]]",[2008],"[""Chem. Vap. Deposition""]","[""T. Pilvi, E. Puukilainen, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Vap. Deposition 14, 85 (2008).""]" +PrOx,,,,Amorphous,,,,,,,[],[],[],[],[],[],[] +,Pr[N(SiMe3)2]3,H2O,"borosilicate, Si",200–400,,,,,,1861 and 1862,"[1861,1862]","[""10.1063/1.3023059"",""""]","[""Permittivity enhancement of hafnium dioxide high-kappa films by cerium doping"",""Evaluation of a praseodymium precursor for atomic layer deposition of oxide dielectric films""]","[[""Chalker, P. R."",""Werner, M."",""Romani, S."",""Potter, R. J."",""Black, K."",""Aspinall, H. C."",""Jones, A. C."",""Zhao, C. Z."",""Taylor, S."",""Heys, P. N.""],[""K. Kukli"",""M. Ritala"",""T. Pilvi"",""T. Sajavaara"",""M. Leskel a"",""A. C. Jones"",""H. C. Aspinall"",""D. C. Gilmer"",""P. J. Tobin""]]","[2008,2004]","[""Appl. Phys. Lett."",""Chem. Mater.""]","[""P. R. Chalker, M. Werner, S. Romani, R. J. Potter, K. Black, H. C. Aspinall, A. C. Jones, C. Z. Zhao, S. Taylor, and P. N. Heys, Appl. Phys. Lett. 93, 182911 (2008)."",""K. Kukli, M. Ritala, T. Pilvi, T. Sajavaara, M. Leskel€a, A. C. Jones, H. C. Aspinall, D. C. Gilmer, and P. J. Tobin, Chem. Mater. 16, 5162 (2004).""]" +,Pr(iPrAMD)3,H2O,H-Si,200–315,,,,,,1863,[1863],"[""""]","[""Recent developments in the MOCVD and ALD of rare earth oxides and silicates""]","[[""Jones, A. C."",""Aspinall, H. C."",""Chalker, R. R."",""Potter, R. J."",""Kukli, K."",""Rahtu, A."",""Ritala, M."",""Leskel a, M.""]]",[2005],"[""Mater. Sci. Eng., B""]","[""A. C. Jones, H. C. Aspinall, R. R. Chalker, R. J. Potter, K. Kukli, A. Rahtu, M. Ritala, and M. Leskel€a, Mater. Sci. Eng., B 118, 97 (2005).""]" +Nd2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Nd(thd)3,O3,"Si, SLG",200–250,290–325,,,,,1864 and 1865,"[1864,1865]","["""",""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications"",""A comparative study on lanthanide oxide thin films grown by atomic layer deposition""]","[[""de Rouffignac, P."",""Gordon, R. G.""],[""J. P aiv asaari"",""M. Putkonen"",""L. Niinist o""]]","[2006,2005]","[""Chem. Vap. Deposition"",""Thin Solid Films""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006)."",""J. P€aiv€asaari, M. Putkonen, and L. Niinist€o, Thin Solid Films 472, 275 (2005).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_038_table_029/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_038_table_029/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..3f1b40551daab9daf185c724dc07aab5a762c2ba --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_038_table_029/gold.csv @@ -0,0 +1,30 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +Sm2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Sm(thd)3,O3,Si,,300,,,,,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +Eu2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Eu(thd)3,O3,Si,,300,,,,,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +Gd2O3,,,,Amorphous,Cubic,Monoclinic,,,,,[],[],[],[],[],[],[] +,Gd(thd)3,O3,Si,,300,,,,,1864 and 1866,"[1864,1866]","["""",""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications"",""Neodymium oxide and neodymium aluminate thin films by atomic layer deposition""]","[[""de Rouffignac, P."",""Gordon, R. G.""],[""Kosola, A."",""P aiv asaari, J."",""Putkonen, M."",""Niinist o, L.""]]","[2006,2005]","[""Chem. Vap. Deposition"",""Thin Solid Films""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006)."",""A. Kosola, J. P€aiv€asaari, M. Putkonen, and L. Niinist€o, Thin Solid Films 479, 152 (2005).""]" +,Gd(CpMe)3,H2O,Si,,150–250,,,,,1866,[1866],"[""""]","[""Neodymium oxide and neodymium aluminate thin films by atomic layer deposition""]","[[""Kosola, A."",""P aiv asaari, J."",""Putkonen, M."",""Niinist o, L.""]]",[2005],"[""Thin Solid Films""]","[""A. Kosola, J. P€aiv€asaari, M. Putkonen, and L. Niinist€o, Thin Solid Films 479, 152 (2005).""]" +,Gd(mmp)3-tetraglyme,H2O,Si,,200–250,,,,,1867,[1867],"[""10.1016/j.jcrysgro.2005.08.002""]","[""Gadolinium oxide thin films by atomic layer deposition""]","[[""Niinisto, J."",""Petrova, N."",""Putkonen, M."",""Niinisto, L."",""Arstila, K."",""Sajavaara, T.""]]",[2005],"[""J. Cryst. Growth""]","[""J. Niinist€o, N. Petrova, M. Putkonen, L. Niinist€o, K. Arstila, and T. Sajavaara, J. Cryst. Growth 285, 191 (2005).""]" +,Gd[OCMe2CHMe2]3,H2O,"Si, H-Si, SLG, Al2O3",350,300–400,250–300,,,,1868 and 1869,"[1868,1869]","["""",""""]","[""Deposition of HfO2, Gd2O3 and PrOx by liquid injection ALD techniques"",""Atomic layer deposition of gadolinium oxide film""]","[[""Potter, R. J."",""Chalker, P. R."",""Manning, T. D."",""Aspinall, H. C."",""Loo, Y. F."",""Jones, A. C."",""Smith, L. M."",""Critchlow, G. W."",""Schumacher, M.""],[""Kukli, K."",""Hatanp a a, T."",""Ritala, M."",""Leskel a, M.""]]","[2005,2007]","[""Chem. Vap. Deposition"",""Chem. Vap. Deposition""]","[""R. J. Potter, P. R. Chalker, T. D. Manning, H. C. Aspinall, Y. F. Loo, A. C. Jones, L. M. Smith, G. W. Critchlow, and M. Schumacher, Chem. Vap. Deposition 11, 159 (2005)."",""K. Kukli, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, Chem. Vap. Deposition 13, 546 (2007).""]" +,Gd[(NiPr)2\-CN(CH3)2]3,H2O,Si,200,160–250,,,,,1871 and 1873,"[1871,1873]","[""10.1116/1.3021040"",""""]","[""Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics"",""Downscaling of defect-passivated Gd 2 O 3 thin films on p-Si(0 0 1) wafers grown by H 2 O-assisted atomic layer deposition""]","[[""Garc ia, H."",""Due nas, S."",""Cast an, H."",""G omez, A."",""Bail on, L."",""Barquero, R."",""Kukli, K."",""Ritala, M."",""Leskel a, M.""],[""R Ranjith"",""A Laha"",""E Bugiel"",""H J Osten"",""K Xu"",""A P Milanov"",""A Devi""]]","[2009,2010]","[""J. Vac. Sci. Technol., B"",""Semicond. Sci. Technol.""]","[""H. Garc\u0003ıa, S. Due~nas, H. Cast\u0003an, A. G\u0003omez, L. Bail\u0003on, R. Barquero, K. Kukli, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. B 27, 416 (2009)."",""R. Ranjith, A. Laha, E. Bugiel, H. J. Osten, K. Xu, A. P. Milanov, and A. Devi, Semicond. Sci. Technol. 25, 105001 (2010).""]" +Dy2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Dy(thd)3,O3,Si,,300,,,,,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +Ho2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Ho(thd)3,O3,Si,,300,,,,,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +Er2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Er(thd)3,O3,Si,,300–350,,,,,1584 and 1864,"[1584,1864]","["""",""""]","[""In Situ Reaction Mechanism Studies on Atomic Layer Deposition of ZrO2 from (CpMe)2Zr(OMe)Me and Water or Ozone"",""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""Knapas, Kjell"",""Ritala, Mikko""],[""de Rouffignac, P."",""Gordon, R. G.""]]","[2008,2006]","[""Chem. Mater."",""Chem. Vap. Deposition""]","[""K. Knapas and M. Ritala, Chem. Mater. 20, 5698 (2008)."",""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +,Er(thd)3,O2⚡,Si,,350,,,,,1530 and 1531,"[1530,1531]","["""",""""]","[""Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals"",""Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits""]","[[""Van, T. T."",""Chang, J. P.""],[""Van, T. T."",""Hoang, J."",""Ostroumov, R."",""Wang, K. L."",""Bargar, J. R."",""Lu, J."",""Blom, H. O."",""Chang, J. P.""]]","[2005,2006]","[""Surf. Sci."",""J. Appl. Phys.""]","[""T. T. Van and J. P. Chang, Surf. Sci. 596, 1 (2005)."",""T. T. Van, J. Hoang, R. Ostroumov, K. L. Wang, J. R. Bargar, J. Lu, H. O. Blom, and J. P. Chang, J. Appl. Phys. 100, 073512 (2006).""]" +,Er(CpMe)3,H2O,"Si, SLG",,250–300,,,,,1875,[1875],"[""""]","[""Atomic layer deposition of rare earth oxides: erbium oxide thin films from eta -diketonate and ozone precursors""]","[[""J. P aiv asaari"",""M. Putkonen"",""T. Sajavaara"",""L. Niinist o""]]",[2004],"[""J. Alloys Compd.""]","[""J. P€aiv€asaari, M. Putkonen, T. Sajavaara, and L. Niinist€o, J. Alloys Compd. 374, 124 (2004).""]" +,Er(tBuAMD)3,O3,Si,250,300,,,,,1876,[1876],"[""10.1002/cvde.200506396""]","[""High growth rate of erbium oxide thin films in atomic layer deposition from (CpMe)(3)Er and water precursors""]","[[""Paivasaari, J."",""Niinisto, J."",""Arstila, K."",""Kukli, K."",""Putkonen, M."",""Niinisto, L.""]]",[2005],"[""Chem. Vap. Deposition""]","[""J. P€aiv€asaari, J. Niinist€o, K. Arstila, K. Kukli, M. Putkonen, and L. Niinist€o, Chem. Vap. Deposition 11, 415 (2005).""]" +Tm2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Tm(thd)3,O3,Si,,300,,,,,1864,[1864],"[""""]","[""Atomic layer deposition of praseodymium aluminum oxide for electrical applications""]","[[""de Rouffignac, P."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""P. de Rouffignac and R. G. Gordon, Chem. Vap. Deposition 12, 152 (2006).""]" +Yb2O3,,,,Amorphous,Cubic,,,,,,[],[],[],[],[],[],[] +,Yb(thd)3,O3,"Si, glass",,300–350,,,,,1877,[1877],"[""""]","[""Synthesis, structure and properties of volatile lanthanide complexes containing amidinate ligands: application for Er2O3 thin film growth by atomic layer deposition""]","[[""P aiv asaari, J."",""Dezelah IV, C. L."",""Back, D."",""El-Kaderi, H. M."",""Heeg, M."",""Putkonen, M."",""Niinist o, L."",""Winter, C. H.""]]",[2005],"[""J. Mater. Chem.""]","[""J. P€aiv€asaari, C. L. Dezelah IV, D. Back, H. M. El-Kaderi, M. Heeg, M. Putkonen, L. Niinist€o, and C. H. Winter, J. Mater. Chem. 15, 4224 (2005).""]" +Lu2O3,,,,Amorphous,,,,,,,[],[],[],[],[],[],[] +,Lu[Cp(SiMe3)]2Cl,H2O,SiO2,360–370,,,,,,1879 and 1880,"[1879,1880]","[""10.1063/1.3002373"",""""]","[""Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100)"",""Atomic-layer deposition of Lu _2 O _3""]","[[""Lu, H. L."",""Scarel, G."",""Lamagna, L."",""Fanciulli, M."",""Ding, Shi-Jin"",""Zhang, David Wei""],[""G. Scarel"",""E. Bonera"",""C. Wiemer"",""G. Tallarida"",""S. Spiga"",""M. Fanciulli"",""I. L. Fedushkin"",""H. Schumann"","". Lebedinskii"",""A. Zenkevich""]]","[2008,2004]","[""Appl. Phys. Lett."",""Appl. Phys. Lett.""]","[""H. L. Lu, G. Scarel, L. Lamagna, M. Fanciulli, S.-J. Ding, and D. W. Zhang, Appl. Phys. Lett. 93, 152906 (2008)."",""G. Scarel, E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, M. Fanciulli, I. L. Fedushkin, H. Schumann, Yu. Lebedinskii, and A. Zenkevich, Appl. Phys. Lett. 85, 630 (2004).""]" +HfO2,,,,Amorphous,Cubic,Tetragonal,Monoclinic,Orthorhombic,,,[],[],[],[],[],[],[] +,HfCl4,H2O,H-Si,300,,,,,,1897 and 1947,"[1897,1947]","["""",""""]","[""Atomic layer deposition of HfO _2 thin films and nanolayered HfO _2 -Al _2 O _3 -Nb _2 O _5 dielectrics"",""Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf6Ta2O17 gate dielectrics""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""D. C. Gilmer"",""R. Hedge"",""R. Rai"",""L. Prabhu""],[""Triyoso, D. H."",""Yu, Z."",""Gregory, R."",""Moore, K."",""Fejes, P."",""Schauer, S.""]]","[2003,2007]","[""J. Mater. Sci.: Mater. Electron."",""J. Mater. Res.""]","[""K. Kukli, M. Ritala, M. Leskel€a, T. Sajavaara, J. Keinonen, D. C. Gilmer, R. Hedge, R. Rai, and L. Prabhu, J. Mater. Sci.: Mater. Electron. 14, 361 (2003)."",""D. H. Triyoso, Z. Yu, R. Gregory, K. Moore, P. Fejes, and S. Schauer, J. Mater. Res. 22, 2856 (2007).""]" +,HfCl4,H2O,"Si, H-Si, SiO2, GaAs, TiN, Pt, Ir, Ru",200–350,,,250–600,,,"1918, 1919, 1922, 1930, 1931, 1970, and 2320","[1918,1919,1922,1930,1931,1970,2320]","["""","""","""","""","""",""10.1116/1.3021023"",""""]","[""Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge"",""Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature"",""Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-kappa dielectric HfO2 layers"",""Electrical characteristics of 8-angstrom EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions"",""Impact of film properties of atomic layer deposited HfO2 resulting from annealing with a TiN capping layer"",""HfO2/Si interface formation in atomic layer deposition films: An in situ investigation"",""Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate""]","[[""Spiga, S."",""Wiemer, C."",""Tallarida, G."",""Scarel, G."",""Ferrari, S."",""Seguini, G."",""Fanciulli, M.""],[""K. Kukli"",""J. Aarik"",""T. Uustare"",""J. Lu"",""M. Ritala"",""A. Aidla"",""L. Pung"",""A. H rsta"",""M. Leskel a"",""A. Kikas"",""V aino Sammelselg""],[""Hellin, D."",""Delabie, A."",""Puurunen, R. L."",""Beaven, P."",""Conard, T."",""Brijs, B."",""De Gendt, S."",""Vinckier, C.""],[""Ragnarsson, L. A."",""Severi, S."",""Trojman, L."",""Johnson, K. D."",""Brunco, D. P."",""Aoulaiche, M."",""Houssa, M."",""Kauerauf, T."",""Degraeve, R."",""Delabie, A."",""Kaushik, V. S."",""De Gendt, S."",""Tsai, W."",""Groeseneken, G."",""De Meyer, K."",""Heyns, M.""],[""Triyoso, D. H."",""Tobin, P. J."",""White, B. E."",""Gregory, R."",""Wang, X. D.""],[""Tallarida, Massimo"",""Karavaev, Konstantin"",""Schmeisser, Dieter""],[""Sun, Q. Q."",""Zhang, C."",""Dong, L."",""Shi, Y."",""Ding, S. J."",""Zhang, D. W.""]]","[2005,2005,2005,2006,2006,2009,2008]","[""Appl. Phys. Lett."",""Thin Solid Films"",""Anal. Sci."",""IEEE Trans. Electron Devices"",""Appl. Phys. Lett."",""J. Vac. Sci. Technol., B"",""J. Appl. Phys.""]","[""S. Spiga, C. Wiemer, G. Tallarida, G. Scarel, S. Ferrari, G. Seguini, and M. Fanciulli, Appl. Phys. Lett. 87, 112904 (2005)."",""K. Kukli, J. Aarik, T. Uustare, J. Lu, M. Ritala, A. Aidla, L. Pung, A. Ha˚rsta, M. Leskel€a, A. Kikas, and V. Sammelselg, Thin Solid Films 479, 1 (2005)."",""D. Hellin, A. Delabie, R. L. Puurunen, P. Beaven, T. Conard, B. Brijs, S. De Gendt, and C. Vinckier, Anal. Sci. 21, 845 (2005)."",""L. A. Ragnarsson, S. Severi, L. Trojman, K. D. Johnson, D. P. Brunco, M. Aoulaiche, M. Houssa, T. Kauerauf, R. Degraeve, A. Delabie, V. S. Kaushik, S. De Gendt, W. Tsai, G. Groeseneken, K. De Meyer, and M. Heyns, IEEE Trans. Electron Devices 53, 1657 (2006)."",""D. H. Triyoso, P. J. Tobin, B. E. White, R. Gregory, and X. D. Wang, Appl. Phys. Lett. 89, 132903 (2006)."",""M. Tallarida, K. Karavaev, and D. Schmeisser, J. Vac. Sci. Technol. B 27, 300 (2009)."",""Q. Q. Sun, C. Zhang, L. Dong, Y. Shi, S. J. Ding, and D. W. Zhang, J. Appl. Phys. 103, 114102 (2008).""]" +,HfCl4,H2O,"H-Si, Ge, SiO2",226–300,226–300,,300–750,,,"1915, 1935, and 1974","[1915,1935,1974]","["""","""",""DOI: 10.1016/j.elspec.2010.04.005""]","[""Hafnium oxide films by atomic layer deposition for high- appa gate dielectric applications: analysis of the density of nanometer-thin films"",""Nucleation and growth behavior of atomic layer deposited HfO2 films on silicon oxide starting surfaces"",""XPS and depth resolved SXES study of HfO2/Si interlayers""]","[[""R. L. Puurunen"",""A. Delabie"",""S. Van Elshocht"",""M. Caymax"",""M. L. Green"",""B. Brijs"",""O. Richard"",""H. Bender"",""T. Conard"",""I. Hoflijk"",""W. Vandervorst"",""D. Hellin"",""D. Vanhaeren"",""C. Zhao"",""S. De Gendt"",""M. Heyns""],[""Nyns, L."",""Hall, L."",""Conard, T."",""Delabie, A."",""Deweerd, W."",""Heyns, M."",""Van Elshocht, S."",""Van Hoornick, N."",""Vinckier, C."",""De Gendt, S.""],[""E.O. Filatova"",""A.A. Sokolov"",""A.A. Ovchinnikov"",""S.Yu. Tveryanovich"",""E.P. Savinov"",""D.E. Marchenko"",""V.V. Afanas'ev"",""A.S. Shulakov""]]","[2005,2006,2010]","[""Appl. Phys. Lett."",""J. Electrochem. Soc."",""J. Electron Spectrosc. Relat. Phenom.""]","[""R. L. Puurunen, A. Delabie, S. Van Elshocht, M. Caymax, M. L. Green, B. Brijs, O. Richard, H. Bender, T. Conard, I. Hoflijk, W. Vandervorst, D. Hellin, D. Vanhaeren, C. Zhao, S. De Gendt, and M. Heyns, Appl. Phys. Lett. 86, 073116 (2005)."",""L. Nyns, L. Hall, T. Conard, A. Delabie, W. Deweerd, M. Heyns, S. Van Elshocht, N. Van Hoornick, C. Vinckier, and S. De Gendt, J. Electrochem. Soc. 153, F205 (2006)."",""E. Filatova, A. Sokolov, A. Ovchinnikov, S. Tveryanovich, E. Savinov, D. Marchenko, V. Afanas’ev, and A. Shulakov, J. Electron Spectrosc. Relat. Phenom. 181, 206 (2010).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_039_table_030/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_039_table_030/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..0598f7867a4d1b0ac18c24da2bee95365ebcaef7 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_039_table_030/gold.csv @@ -0,0 +1,38 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,HfCl4,H2O,"H-Si, SiO2",300,600,,300–600,,,1901,[1901],"[""""]","[""Combining grazing incidence X -ray diffraction and X -ray reflectivity for the evaluation of the structural evolution of HfO _2 thin films with annealing""]","[[""C. Wiemer"",""S. Ferrari"",""M. Fanciulli"",""G. Pavia"",""L. Lutterotti""]]",[2004],"[""Thin Solid Films""]","[""C. Wiemer, S. Ferrari, M. Fanciulli, G. Pavia, and L. Lutterotti, Thin Solid Films 450, 134 (2004).""]" +,HfCl4,H2O,Si,600–880,880–940,500–600,500–940,500–600,,1888,[1888],"[""""]","[""Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition""]","[[""J. Aarik"",""A. Aidla"",""H. Mandar"",""V. Sammelselg"",""T. Uustare""]]",[2000],"[""J. Cryst. Growth""]","[""J. Aarik, A. Aidla, H. M€andar, V. Sammelselg, and T. Uustare, J. Cryst. Growth 220, 105 (2000).""]" +,HfCl4,H2O,"Si, H-Si, SiO2, HfO2",225–300,300–750,300–750,300–940,300–750,,"1554, 1887, 1906, 1918, and 2321","[1554,1887,1906,1918,2321]","["""","""","""","""",""""]","[""Characteristics of ZrO _2 films deposited by using the atomic layer deposition method"",""Influence of substrate temperature on atomic layer growth and properties of HfO _2 thin films"",""Impact of Deposition and Annealing Temperatures on Material and Electrical Characteristics of ALD HfO _2"",""Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge"",""Liquid injection MOCVD and ALD of ZrO _2 using Zr �-cyclopentadienyl precursors""]","[[""J. Lee"",""J. Koo"",""H. S. Sim"",""H. Jeon"",""Y. Won""],[""J. Aarik"",""A. Aidla"",""A.-A. Kiisler"",""T. Uustare"",""V. Sammelselg""],[""D. Triyoso"",""R. Liu"",""D. Roan"",""M. Ramon"",""N. V. Edwards"",""R. Gregory"",""D. Werho"",""J. Kulik"",""G. Tam"",""E. Irwin"",""X-D. Wang"",""L. B. La"",""C. Hobbs"",""R. Garcia"",""J. Baker"",""B. E. White, Jr."",""P. Tobin""],[""Spiga, S."",""Wiemer, C."",""Tallarida, G."",""Scarel, G."",""Ferrari, S."",""Seguini, G."",""Fanciulli, M.""],[""Jeffrey M. Gaskell"",""Anthony C. Jones"",""Kate Black"",""Paul R. Chalker"",""Thomas Leese"",""Andrew Kingsley"",""Rajesh Odedra"",""Peter N. Heys""]]","[2004,1999,2004,2005,2007]","[""J. Korean Phys. Soc."",""Thin Solid Films"",""J. Electrochem. Soc."",""Appl. Phys. Lett."",""Surf. Coat. Technol.""]","[""J. Lee, J. Koo, H. S. Sim, H. Jeon, and Y. Won, J. Korean Phys. Soc. 44, 915 (2004)."",""J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, and V. Sammelselg, Thin Solid Films 340, 110 (1999)."",""D. Triyoso, R. Liu, D. Roan, M. Ramon, N. V. Edwards, R. Gregory, D. Werho, J. Kulik, G. Tam, E. Irwin, X.-D. Wang, L. B. La, C. Hobbs, R. Garcia, J. Baker, J. B. E. White, and P. Tobin, J. Electrochem. Soc. 151, F220 (2004)."",""S. Spiga, C. Wiemer, G. Tallarida, G. Scarel, S. Ferrari, G. Seguini, and M. Fanciulli, Appl. Phys. Lett. 87, 112904 (2005)."",""J. M. Gaskell, A. C. Jones, K. Black, P. R. Chalker, T. Leese, A. Kingsley, R. Odedra, and P. N. Heys, Surf. Coat. Technol. 201, 9095 (2007).""]" +,HfCl4,H2O,Si,,300,300,300,300,,1559,[1559],"[""""]","[""Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films""]","[[""Tkachev, S. N."",""Manghnani, M. H."",""Niilisk, A."",""Aarik, J."",""M andar, H.""]]",[2005],"[""J. Mater. Sci.""]","[""S. N. Tkachev, M. H. Manghnani, A. Niilisk, J. Aarik, and H. M€andar, J. Mater. Sci. 40, 4293 (2005).""]" +,HfCl4,H2O,"Si, SiO2, sapphire, MgO",,600,600,600,600,,1556 and 1557,"[1556,1557]","["""",""""]","[""Microstructural evolution of ZrO _2 -HfO _2 nanolaminate structures grown by atomic layer deposition"",""Comparative study on electrical and microstructural characteristics of ZrO2 and HfO2 grown by atomic layer deposition""]","[[""Kim, H. S."",""McIntyre, P. 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Electrochem. Soc.""]","[""D. H. Triyoso, M. Ramon, R. I. Hegde, D. Roan, R. Garcia, J. Baker, X. D. Wang, P. Fejes, B. E. White, and P. J. Tobin, J. Electrochem. Soc. 152, G203 (2005).""]" +,HfCl4,H2O,Pt,350,,,350,350,,1970,[1970],"[""10.1116/1.3021023""]","[""HfO2/Si interface formation in atomic layer deposition films: An in situ investigation""]","[[""Tallarida, Massimo"",""Karavaev, Konstantin"",""Schmeisser, Dieter""]]",[2009],"[""J. Vac. Sci. Technol., B""]","[""M. Tallarida, K. Karavaev, and D. Schmeisser, J. Vac. Sci. Technol. B 27, 300 (2009).""]" +,HfCl4,H2O,"Si, SiO2, glass",300–500,,500,300–600,500,,"1558, 1884, and 1932","[1558,1884,1932]","["""","""",""""]","[""Raman and Brillouin scattering spectroscopy studies of atomic layer-deposited ZrO2 and kHfO(2) thin films"",""Electrical properties of tantalum based composite oxide films"",""Impact of Zr addition on properties of atomic layer deposited HfO2""]","[[""Tkachev, S. N."",""Manghnani, M. H."",""Niilisk, A."",""Aarik, J."",""M andar, H.""],[""H. Kattelus"",""M. Ylilammi"",""J. Salmi"",""T. Ranta-Aho"",""E. Nyk anen"",""I. Suni""],[""Triyoso, D. H."",""Hegde, R. I."",""Schaeffer, J. K."",""Roan, D."",""Tobin, P. J."",""Samavedam, S. B."",""White, B. E."",""Gregory, R."",""Wang, X. D.""]]","[2005,1993,2006]","[""Spectrochim. Acta, Part A"",""Amorphous Insulating Thin Films"",""Appl. Phys. Lett.""]","[""S. N. Tkachev, M. H. Manghnani, A. Niilisk, J. Aarik, and H. M€andar, Spectrochim. Acta, Part A 61, 2434 (2005)."",""H. Kattelus, M. Ylilammi, J. Salmi, T. Ranta-Aho, E. Nyk€anen, and I. Suni, in Amorphous Insulating Thin Films, Mater. Res. Soc. Symp. Proc., edited by J. Kanicki, W. L. Warren, R. A. B. Devine, and M. Matsumura (Materials Research Society, Warrendale, USA, 1993), Vol. 284, pp. 511–516."",""D. H. Triyoso, R. I. Hegde, J. K. Schaeffer, D. Roan, P. J. Tobin, S. B. Samavedam, B. E. White, R. Gregory, and X. D. Wang, Appl. Phys. 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Fanciulli"",""G. Pavia"",""L. Lutterotti""]]","[2002,2004]","[""Electrochem. Solid-State Lett."",""Thin Solid Films""]","[""N. Yoshii, N. Takahashi, T. Nakamura, and M. Yoshioka, Electrochem. Solid-State Lett. 5, C85 (2002)."",""C. Wiemer, S. Ferrari, M. Fanciulli, G. Pavia, and L. Lutterotti, Thin Solid Films 450, 134 (2004).""]" +,HfI4,H2O,poly-Si,225,400–500,400–500,300–500,400–500,,1981,[1981],"[""""]","[""Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl _2 [N(SiMe _3 ) _2 ] _2 and H _2 O""]","[[""S.-W. Kang"",""S.-W. Rhee"",""S. M. George""]]",[2004],"[""J. Vac. Sci. Technol., A""]","[""S.-W. Kang, S.-W. Rhee, and S. M. George, J. Vac. Sci. Technol. A 22, 2392 (2004).""]" +,HfI4,H2O,MgO,,,,400–500,,,1981,[1981],"[""""]","[""Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl _2 [N(SiMe _3 ) _2 ] _2 and H _2 O""]","[[""S.-W. Kang"",""S.-W. Rhee"",""S. M. George""]]",[2004],"[""J. Vac. Sci. Technol., A""]","[""S.-W. Kang, S.-W. Rhee, and S. M. George, J. Vac. Sci. Technol. A 22, 2392 (2004).""]" +,HfI4,H2O2,poly-Si,225,400–500,400–500,300–500,400–500,,1981,[1981],"[""""]","[""Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl _2 [N(SiMe _3 ) _2 ] _2 and H _2 O""]","[[""S.-W. Kang"",""S.-W. Rhee"",""S. M. George""]]",[2004],"[""J. Vac. Sci. Technol., A""]","[""S.-W. Kang, S.-W. Rhee, and S. M. George, J. Vac. Sci. Technol. A 22, 2392 (2004).""]" +,HfI4,H2O2,MgO,,,,400–500,,,1981,[1981],"[""""]","[""Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl _2 [N(SiMe _3 ) _2 ] _2 and H _2 O""]","[[""S.-W. Kang"",""S.-W. Rhee"",""S. M. George""]]",[2004],"[""J. Vac. Sci. Technol., A""]","[""S.-W. Kang, S.-W. Rhee, and S. M. George, J. Vac. Sci. Technol. A 22, 2392 (2004).""]" +,HfI4,O2,H-Si,,,,570–750,,,1984,[1984],"[""""]","[""Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films""]","[[""J. Aarik"",""J. Sundqvist"",""A. Aidla"",""J. Lu"",""T. Sajavaara"",""K. Kukli"",""A. H rsta""]]",[2002],"[""Thin Solid Films""]","[""J. Aarik, J. Sundqvist, A. Aidla, J. Lu, T. Sajavaara, K. Kukli, and A. Ha˚rsta, Thin Solid Films 418, 69 (2002).""]" +,HfCp2Me2,H2O,Si,,,,300–425,,,1989 and 1990,"[1989,1990]","["""",""10.1039/b417866c""]","[""Surface chemistry of HfI4 on Si(100)-(2 x 1) studied by core level photoelectron spectroscopy"",""Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water""]","[[""Sandell, A."",""Karlsson, P. G."",""Richter, J. H."",""Blomquist, J."",""Uvdal, P.""],[""Niinisto, J."",""Putkonen, M."",""Niinisto, L."",""Stoll, S. L."",""Kukli, K."",""Sajavaara, T."",""Ritala, M."",""Leskela, M.""]]","[2007,2005]","[""Surf. 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Niinist€o, S. L. Stoll, K. Kukli, T. Sajavaara, M. Ritala, and M. Leskel€a, J. Mater. Chem. 15, 2271 (2005).""]" +,Hf(CpMe)2Me2,H2O,Si,,350,350,350,350,,1579,[1579],"[""""]","[""Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films""]","[[""Jinesh, K. B."",""Besling, W. F. A."",""Tois, E."",""Klootwijk, J. H."",""Wolters, R."",""Dekkers, W."",""Kaiser, M."",""Bakker, F."",""Tuominen, M."",""Roozeboom, F.""]]",[2008],"[""Appl. Phys. Lett.""]","[""K. B. Jinesh, W. F. A. Besling, E. Tois, J. H. Klootwijk, R. Wolters, W. Dekkers, M. Kaiser, F. Bakker, M. Tuominen, and F. Roozeboom, Appl. Phys. Lett. 93, 062903 (2008).""]" +,Hf(CpMe)2Me2,O3,Si,,,,300–500,,,1991,[1991],"[""10.1149/1.2162447""]","[""HfO2 films grown by ALD using cyclopentadienyl-type precursors and H2O or O-3 as oxygen source""]","[[""Niinisto, J."",""Putkonen, M."",""Niinisto, L."",""Arstila, K."",""Sajavaara, T."",""Lu, J."",""Kukli, K."",""Ritala, M."",""Leskela, M.""]]",[2006],"[""J. 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Soc. 153, F39 (2006).""]" +,Hf(CpMe)2(OiPr)Me,H2O,Si,250–440,,,,,,1993,[1993],"[""10.1063/1.3400213""]","[""Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks""]","[[""Wiemer, C."",""Lamagna, L."",""Baldovino, S."",""Perego, M."",""Schamm-Chardon, S."",""Coulon, P. E."",""Salicio, O."",""Congedo, G."",""Spiga, S."",""Fanciulli, M.""]]",[2010],"[""Appl. Phys. Lett.""]","[""C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, S. Schamm-Chardon, P. E. Coulon, O. Salicio, G. Congedo, S. Spiga, and M. Fanciulli, Appl. Phys. Lett. 96, 182901 (2010).""]" +,Hf(CpMe)2(mmp)Me,H2O,Si,250–440,,,,,,1993,[1993],"[""10.1063/1.3400213""]","[""Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks""]","[[""Wiemer, C."",""Lamagna, L."",""Baldovino, S."",""Perego, M."",""Schamm-Chardon, S."",""Coulon, P. E."",""Salicio, O."",""Congedo, G."",""Spiga, S."",""Fanciulli, M.""]]",[2010],"[""Appl. Phys. Lett.""]","[""C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, S. Schamm-Chardon, P. E. Coulon, O. Salicio, G. Congedo, S. Spiga, and M. Fanciulli, Appl. Phys. Lett. 96, 182901 (2010).""]" +,HfCp(NMe2)3,O3,Si,250,300–350,300–350,300–350,,,1994,[1994],"[""""]","[""Growth of HfO2 by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors""]","[[""O'Kane, R."",""Gaskell, J."",""Jones, A. C."",""Chalker, P. R."",""Black, K."",""Werner, M."",""Taechakumput, P."",""Taylor, S."",""Heys, P. N."",""Odedra, R.""]]",[2007],"[""Chem. Vap. Deposition""]","[""R. O’Kane, J. Gaskell, A. C. Jones, P. R. Chalker, K. Black, M. Werner, P. Taechakumput, S. Taylor, P. N. Heys, and R. Odedra, Chem. Vap. Deposition 13, 609 (2007).""]" +,Hf(CpMe)(NMe2)3,O3,Si,250,300–350,300–350,300–350,,,1994,[1994],"[""""]","[""Growth of HfO2 by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors""]","[[""O'Kane, R."",""Gaskell, J."",""Jones, A. C."",""Chalker, P. R."",""Black, K."",""Werner, M."",""Taechakumput, P."",""Taylor, S."",""Heys, P. N."",""Odedra, R.""]]",[2007],"[""Chem. Vap. Deposition""]","[""R. O’Kane, J. Gaskell, A. C. Jones, P. R. Chalker, K. Black, M. Werner, P. Taechakumput, S. Taylor, P. N. Heys, and R. Odedra, Chem. Vap. Deposition 13, 609 (2007).""]" +,Hf(tBuO)4,O2,H-Si,350–480,,,,,,2322,[2322],"[""""]","[""Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates""]","[[""Kukli, K."",""Ritala, M."",""Pilvi, T."",""Aaltonen, T."",""Aarik, J."",""Lautala, M."",""Leskel a, M.""]]",[2005],"[""Mater. Sci. Eng., B""]","[""K. Kukli, M. Ritala, T. Pilvi, T. Aaltonen, J. Aarik, M. Lautala, and M. Leskel€a, Mater. Sci. Eng., B 118, 112 (2005).""]" +,Hf(mmp)4,O2,Si,,,,550,,,684,[684],"[""""]","[""ALD of scandium oxide from scandium Tris(N,N-'-diisopropylacetamidinate) and water""]","[[""de Rouffignac, P."",""Yousef, A. P."",""Kim, K. H."",""Gordon, R. G.""]]",[2006],"[""Electrochem. Solid-State Lett.""]","[""P. de Rouffignac, A. P. Yousef, K. H. Kim, and R. G. Gordon, Electrochem. Solid-State Lett. 9, F45 (2006).""]" +,Hf(mmp)4,H2O,"borosilicate, Si",225–325,,,325–425,,,1867 and 2004,"[1867,2004]","[""10.1016/j.jcrysgro.2005.08.002"",""10.1021/cm1010289""]","[""Gadolinium oxide thin films by atomic layer deposition"",""Permittivity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 interlayer""]","[[""Niinisto, J."",""Petrova, N."",""Putkonen, M."",""Niinisto, L."",""Arstila, K."",""Sajavaara, T.""],[""Seo, Minha"",""Kim, Seong Keun"",""Han, Jeong Hwan"",""Hwang, Cheol Seong""]]","[2005,2010]","[""J. Cryst. Growth"",""Chem. Mater.""]","[""J. Niinist€o, N. Petrova, M. Putkonen, L. Niinist€o, K. Arstila, and T. Sajavaara, J. Cryst. Growth 285, 191 (2005)."",""M. Seo, S. K. Kim, J. H. Han, and C. S. Hwang, Chem. Mater. 22, 4419 (2010).""]" +,Hf(mmp)4,H2O2,"borosilicate, Si",300,,,325–425,,,2004,[2004],"[""10.1021/cm1010289""]","[""Permittivity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 interlayer""]","[[""Seo, Minha"",""Kim, Seong Keun"",""Han, Jeong Hwan"",""Hwang, Cheol Seong""]]",[2010],"[""Chem. Mater.""]","[""M. Seo, S. K. Kim, J. H. Han, and C. S. Hwang, Chem. Mater. 22, 4419 (2010).""]" +,Hf(tBuO)2(mmp)2,H2O,"borosilicate, SiO2",275–300,,360,300–400,,,2001,[2001],"[""""]","[""Electronic structure and band alignment at the HfO2/4H-SiC interface""]","[[""Tanner, C. M."",""Choi, J."",""Chang, J. P.""]]",[2007],"[""J. Appl. Phys.""]","[""C. M. Tanner, J. Choi, and J. P. Chang, J. Appl. Phys. 101, 034108 (2007).""]" +,Hf(OCEtMe2)4,H2O,H-Si,250–350,,,,,,2005,[2005],"[""""]","[""Atomic layer deposition of hafnium dioxide films from 1-methoxy-2-methyl-2-propanolate complex of hafnium""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""A. C. Jones"",""J. L. Roberts""]]",[2003],"[""Chem. Mater.""]","[""K. Kukli, M. Ritala, M. Leskel€a, T. Sajavaara, J. Keinonen, A. C. Jones, and J. L. Roberts, Chem. Mater. 15, 1722 (2003).""]" +,Hf(OCEtMe2)4,O2⚡,H-Si,,,250,250,,,2006,[2006],"[""""]","[""ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp) _4""]","[[""W. Cho"",""K.-S. An"",""T.-M. Chung"",""C.�G. Kim"",""B.-S. So"",""Y.-H. You"",""J.-H. Hwang"",""D. Jung"",""Y. Kim""]]",[2006],"[""Chem. Vap. Deposition""]","[""W. Cho, K.-S. An, T.-M. Chung, C. Kim, B.-S. So, Y.-H. You, J.-H. Hwang, D. Jung, and Y. Kim, Chem. Vap. Deposition 12, 665 (2006).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_040_table_031/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_040_table_031/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..8ef8d76615a4a4a6c9d720d60209ff94a5a55942 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_040_table_031/gold.csv @@ -0,0 +1,33 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Hf(OiPr)4,O2,H-Si,,,,300,,,1995,[1995],"[""10.1016/j.jcrysgro.2009.10.028""]","[""Growth and phase stabilization of HfO2 thin films by ALD using novel precursors""]","[[""Niinist o, Jaakko"",""M antym aki, Miia"",""Kukli, Kaupo"",""Costelle, Leila"",""Puukilainen, Esa"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2010],"[""J. Cryst. Growth""]","[""J. Niinist€o, M. M€antym€aki, K. Kukli, L. Costelle, E. Puukilainen, M. Ritala, and M. Leskel€a, J. Cryst. Growth 312, 245 (2010).""]" +,Hf(OtBu)4,HCOOH,"Si, SrTiO3, LaAlO3, MgO, wool, cellulose, latex, CNT",100–125,,,,,,908,[908],"[""""]","[""Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition""]","[[""Erwan Rauwel"",""Guylhaine Clavel"",""Marc-Georg Willinger"",""Protima Rauwel"",""Nicola Pinna""]]",[2008],"[""Angew. Chem., Int. Ed.""]","[""E. Rauwel, G. Clavel, M.-G. Willinger, P. Rauwel, and N. Pinna, Angew. Chem., Int. Ed. 47, 3592 (2008).""]" +,Hf(OtBu)4,CH3COOH,"Si, SrTiO3, LaAlO3, MgO, wool, cellulose, latex, CNT",175–275,,,,,,908–911,"[908,909,910,911]","["""","""",""10.1039/b821555c"",""10.1116/1.3058743""]","[""Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition"",""Carboxylic acids as oxygen sources for the atomic layer deposition of high-kappa metal oxides"",""The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing"",""Effect of annealing and electrical properties of high-kappa thin films grown by atomic layer deposition using carboxylic acids as oxygen source""]","[[""Erwan Rauwel"",""Guylhaine Clavel"",""Marc-Georg Willinger"",""Protima Rauwel"",""Nicola Pinna""],[""Rauwel, E."",""Willinger, M. G."",""Ducroquet, F."",""Rauwel, P."",""Matko, I."",""Kiselev, D."",""Pinna, N.""],[""Willinger, Marc-Georg"",""Neri, Giovanni"",""Bonavita, Anna"",""Micali, Giuseppe"",""Rauwel, Erwan"",""Herntrich, Tobias"",""Pinna, Nicola""],[""Rauwel, E."",""Ducroquet, F."",""Rauwel, P."",""Willinger, M. -G."",""Matko, I."",""Pinna, N.""]]","[2008,2008,2009,2009]","[""Angew. Chem., Int. Ed."",""J. Phys. Chem. C"",""Phys. Chem. Chem. Phys."",""J. Vac. Sci. Technol., B""]","[""E. Rauwel, G. Clavel, M.-G. Willinger, P. Rauwel, and N. Pinna, Angew. Chem., Int. Ed. 47, 3592 (2008)."",""E. Rauwel, M. G. Willinger, F. Ducroquet, P. Rauwel, I. Matko, D. Kiselev, and N. Pinna, J. Phys. Chem. C 112, 12754 (2008)."",""M.-G. Willinger, G. Neri, A. Bonavita, G. Micali, E. Rauwel, T. Herntrich, and N. Pinna, Phys. Chem. Chem. Phys. 11, 3615 (2009)."",""E. Rauwel, F. Ducroquet, P. Rauwel, M. G. Willinger, I. Matko, and N. Pinna, J. Vac. Sci. Technol. B 27, 230 (2009).""]" +,Hf(OtBu)(NEtMe)3,O3,Si,300,,,300,,,2002,[2002],"[""""]","[""Atomic layer deposition of hafnium dioxide films using hafnium bis(2-butanolate)bis(1-methoxy-2-methyl-2-propanolate) and water""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""A. C. Jones"",""J. L. Roberts""]]",[2003],"[""Chem. Vap. Deposition""]","[""K. Kukli, M. Ritala, M. Leskel€a, T. Sajavaara, J. Keinonen, A. C. Jones, and J. L. Roberts, Chem. Vap. Deposition 9, 315 (2003).""]" +,Hf(OtBu)(NEtMe)3,O3,TiO2(rutile),250,,250,,,,355,[355],"[""10.1149/1.3276040""]","[""Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD""]","[[""Dingemans, G."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2010],"[""Electrochem. Solid-State Lett.""]","[""G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid-State Lett. 13, H76 (2010).""]" +,Hf(OtBu)(NEtMe)3,O3,TiO2(anatase),,,,250,,,355,[355],"[""10.1149/1.3276040""]","[""Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD""]","[[""Dingemans, G."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2010],"[""Electrochem. Solid-State Lett.""]","[""G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid-State Lett. 13, H76 (2010).""]" +,Hf(NMe2)4,H2O,Si,50–150,,,200–300,,,1601 and 1602,"[1601,1602]","["""",""""]","[""Atomic layer deposition of ZrO _2 thin films using a new alkoxide precursor"",""ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition""]","[[""R. Matero"",""M. Ritala"",""M. Leskel a"",""A. C. Jones"",""P. A. Williams"",""J. F. Bickley"",""A. Steiner"",""T. J. Leedham"",""H. O. Davies""],[""Tak, Y."",""Yong, K.""]]","[2002,2005]","[""J. Non-Cryst. Solids"",""Surf. Rev. Lett.""]","[""R. Matero, M. Ritala, M. Leskel€a, A. C. Jones, P. A. Williams, J. F. Bickley, A. Steiner, T. J. Leedham, and H. O. Davies, J. Non-Cryst. Solids 303, 24 (2002)."",""Y. Tak and K. Yong, Surf. Rev. Lett. 12, 215 (2005).""]" +,Hf(NMe2)4,H2O,CNC,,,,150,,,362,[362],"[""10.1088/0953-8984/22/15/155401""]","[""Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition""]","[[""Scarel, Giovanna"",""Na, Jeong-Seok"",""Parsons, Gregory N.""]]",[2010],"[""J. Phys.: Condens. Matter""]","[""G. Scarel, J.-S. Na, and G. N. Parsons, J. Phys.: Condens. Matter 22, 155401 (2010).""]" +,Hf(NMe2)4,H2O,"H-Si, SiO2",200–400,,,205–400,,,"250, 2011, 2023, and 2320","[250,2011,2023,2320]","["""","""",""10.1063/1.3243234"",""""]","[""Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications"",""Crystallization process of high-k gate dielectrics studied by surface X-ray diffraction"",""Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition"",""Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate""]","[[""Chiou, Y. K."",""Chang, C. H."",""Wang, C. C."",""Lee, K. Y."",""Wu, T. B."",""Kwo, R."",""Hong, M. H.""],[""Terasawa, N."",""Akimoto, K."",""Mizuno, Y."",""Ichimiya, A."",""Sumitani, K."",""Takahashi, T."",""Zhang, X. W."",""Sugiyama, H."",""Kawata, H."",""Nabatame, T."",""Toriumi, A.""],[""Long, R. D."",""O'Connor, E."",""Newcomb, S. B."",""Monaghan, S."",""Cherkaoui, K."",""Casey, P."",""Hughes, G."",""Thomas, K. K."",""Chalvet, F."",""Povey, I. M."",""Pemble, M. E."",""Hurley, P. K.""],[""Sun, Q. Q."",""Zhang, C."",""Dong, L."",""Shi, Y."",""Ding, S. J."",""Zhang, D. W.""]]","[2007,2005,2009,2008]","[""J. Electrochem. Soc."",""Appl. Surf. Sci."",""J. Appl. Phys."",""J. Appl. Phys.""]","[""Y. K. Chiou, C. H. Chang, C. C. Wang, K. Y. Lee, T. B. Wu, R. Kwo, and M. H. Hong, J. Electrochem. Soc. 154, G99 (2007)."",""N. Terasawa, K. Akimoto, Y. Mizuno, A. Ichimiya, K. Sumitani, T. Takahashi, X. W. Zhang, H. Sugiyama, H. Kawata, T. Nabatame, and A. Toriumi, Appl. Surf. Sci. 244, 16 (2005)."",""R. D. Long, E. O’Connor, S. B. Newcomb, S. Monaghan, K. Cherkaoui, P. Casey, G. Hughes, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, and P. K. Hurley, J. Appl. Phys. 106, 084508 (2009)."",""Q. Q. Sun, C. Zhang, L. Dong, Y. Shi, S. J. Ding, and D. W. Zhang, J. Appl. Phys. 103, 114102 (2008).""]" +,Hf(NMe2)4,H2O,Si,250,,350,350,350,,2010 and 2016,"[2010,2016]","["""",""""]","[""Comparison between atomic-layer-deposited HfO2 films using O _3 or H _2 O oxidant and Hf[N(CH _3 ) _2 ] _4 precursor"",""ALD resist formed by vapor-deposited self-assembled monolayers""]","[[""M. Cho"",""D. S. Jeong"",""J. Park"",""H. B. Park"",""S. W. Lee"",""T. J. Park"",""C. S. Hwang""],[""Hong, J."",""Porter, D. W."",""Sreenivasan, R."",""McIntyre, P. C."",""Bent, S. F.""]]","[2004,2007]","[""Appl. Phys. Lett."",""Langmuir""]","[""M. Cho, D. S. Jeong, J. Park, H. B. Park, S. W. Lee, T. J. Park, and C. S. Hwang, Appl. Phys. Lett. 85, 5953 (2004)."",""J. Hong, D. W. Porter, R. Sreenivasan, P. C. McIntyre, and S. F. Bent, Langmuir 23, 1160 (2007).""]" +,Hf(NMe2)4,H2O,Ge,225,,,,,,2021,[2021],"[""10.1063/1.3269577""]","[""Low-voltage pentacene organic field-effect transistors with high-kappa HfO2 gate dielectrics and high stability under bias stress""]","[[""Zhang, Xiao-Hong"",""Tiwari, Shree Prakash"",""Kim, Sung-Jin"",""Kippelen, Bernard""]]",[2009],"[""Appl. Phys. Lett.""]","[""X.-H. Zhang, S. P. Tiwari, S.-J. Kim, and B. Kippelen, Appl. Phys. Lett. 95, 223302 (2009).""]" +,Hf(NMe2)4,O2⚡,"Si, H-Si",250,,,280,,,1619 and 2041,"[1619,2041]","["""",""10.1143/JJAP.48.066515""]","[""Effect of plasma on characteristics of zirconium oxide films deposited by plasma-enhanced atomic layer deposition"",""Atomic Layer Deposition of HfO2 onto Si Using Hf(NMe2)(4)""]","[[""Yun, S. J."",""Lim, J. W."",""Lee, J. H.""],[""Kim, Jeong Chan"",""Cho, Yong Seok"",""Moon, Sang Heup""]]","[2005,2009]","[""Electrochem. Solid-State Lett."",""Jpn. J. Appl. Phys.""]","[""S. J. Yun, J. W. Lim, and J. H. Lee, Electrochem. Solid-State Lett. 8, F47 (2005)."",""J. C. Kim, Y. S. Cho, and S. H. Moon, Jpn. J. Appl. Phys., Part 1 48, 066515 (2009).""]" +,Hf(NEtMe)4,H2O,Si,250,,,250,,,2023,[2023],"[""10.1063/1.3243234""]","[""Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition""]","[[""Long, R. D."",""O'Connor, E."",""Newcomb, S. B."",""Monaghan, S."",""Cherkaoui, K."",""Casey, P."",""Hughes, G."",""Thomas, K. K."",""Chalvet, F."",""Povey, I. M."",""Pemble, M. E."",""Hurley, P. K.""]]",[2009],"[""J. Appl. Phys.""]","[""R. D. Long, E. O’Connor, S. B. Newcomb, S. Monaghan, K. Cherkaoui, P. Casey, G. Hughes, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, and P. K. Hurley, J. Appl. Phys. 106, 084508 (2009).""]" +,Hf(NEtMe)4,H2O,"borosilicate, ITO, Si, Al2O3",150–200,,200–300,200–300,200–300,,"1601, 2071, 2072, and 2082","[1601,2071,2072,2082]","["""","""","""",""""]","[""Atomic layer deposition of ZrO _2 thin films using a new alkoxide precursor"",""Effect of nitrogen incorporation in HfO2 films deposited by plasma-enhanced atomic layer deposition"",""Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water"",""Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors""]","[[""R. Matero"",""M. Ritala"",""M. Leskel a"",""A. C. Jones"",""P. A. Williams"",""J. F. Bickley"",""A. Steiner"",""T. J. Leedham"",""H. O. Davies""],[""Lee, Y."",""Kim, S."",""Koo, J."",""Kim, I."",""Choi, J."",""Jeon, H."",""Won, Y.""],[""K. Kukli"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""],[""Chiou, Y. K."",""Chang, C. H."",""Wu, T. B.""]]","[2002,2006,2002,2007]","[""J. Non-Cryst. Solids"",""J. Electrochem. Soc."",""Chem. Vap. Deposition"",""J. Mater. Res.""]","[""R. Matero, M. Ritala, M. Leskel€a, A. C. Jones, P. A. Williams, J. F. Bickley, A. Steiner, T. J. Leedham, and H. O. Davies, J. Non-Cryst. Solids 303, 24 (2002)."",""Y. Lee, S. Kim, J. Koo, I. Kim, J. Choi, H. Jeon, and Y. Won, J. Electrochem. Soc. 153, G353 (2006)."",""K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Chem. Vap. Deposition 8, 199 (2002)."",""Y. K. Chiou, C. H. Chang, and T. B. Wu, J. Mater. Res. 22, 1899 (2007).""]" +,Hf(NEtMe)4,H2O,H-Si,200–250,,,,,,2023 and 2081,"[2023,2081]","[""10.1063/1.3243234"",""""]","[""Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition"",""Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN""]","[[""Long, R. D."",""O'Connor, E."",""Newcomb, S. B."",""Monaghan, S."",""Cherkaoui, K."",""Casey, P."",""Hughes, G."",""Thomas, K. K."",""Chalvet, F."",""Povey, I. M."",""Pemble, M. E."",""Hurley, P. K.""],[""Chang, Y. C."",""Chiu, H. C."",""Lee, Y. J."",""Huang, M. L."",""Lee, K. Y."",""Hong, M."",""Chiu, Y. N."",""Kwo, J."",""Wang, Y. H.""]]","[2009,2007]","[""J. Appl. Phys."",""Appl. Phys. Lett.""]","[""R. D. Long, E. O’Connor, S. B. Newcomb, S. Monaghan, K. Cherkaoui, P. Casey, G. Hughes, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, and P. K. Hurley, J. Appl. Phys. 106, 084508 (2009)."",""Y. C. Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, M. Hong, Y. N. Chiu, J. Kwo, and Y. H. Wang, Appl. Phys. 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Ritala"",""T. Uustare"",""T. Sajavaara"",""J. Lu"",""J. Sundqvist"",""A. Aidla"",""L. Pung"",""A. H rsta"",""M. Leskel a""]]","[2004,2005]","[""J. Korean Phys. Soc."",""J. Appl. Phys.""]","[""T. Lee, H.-K. Ko, Y. Kim, J. Ahn, Y. B. Kim, K. S. Kim, and D. K. Choi, J. Korean Phys. Soc. 45, 1308 (2004)."",""K. Kukli, J. Aarik, M. Ritala, T. Uustare, T. Sajavaara, J. Lu, J. Sundqvist, A. Aidla, L. Pung, A. Ha˚rsta, and M. Leskel€a, J. Appl. Phys. 97, 099903 (2005).""]" +,Hf(NEtMe)4,O3,"H-Si, SiO2",180–275,,350,,350,,2102,[2102],"[""""]","[""Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor""]","[[""Wang, Y."",""Dai, M."",""Ho, M. T."",""Wielunski, L. S."",""Chabal, Y. J.""]]",[2007],"[""Appl. Phys. Lett.""]","[""Y. Wang, M. Dai, M. T. Ho, L. S. Wielunski, and Y. J. Chabal, Appl. Phys. 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Deposition 12, 665 (2006).""]" +,Hf(ONEt2)4,H2O,"borosilicate, Si",300,,,300,,,2007,[2007],"[""""]","[""Remote plasma atomic layer deposition of HfO2 thin films using the alkoxide precursor Hf(mp)(4)""]","[[""Kim, S."",""Kim, J."",""Choi, J."",""Kang, H."",""Jeon, H."",""Cho, W."",""An, K. S."",""Chung, T. M."",""Kim, Y."",""Bae, C.""]]",[2006],"[""Electrochem. Solid-State Lett.""]","[""S. Kim, J. Kim, J. Choi, H. Kang, H. Jeon, W. Cho, K. S. An, T. M. Chung, Y. Kim, and C. Bae, Electrochem. Solid-State Lett. 9, G200 (2006).""]" +,Hf(NO3)4,H2O,H-Si,180,,,,,,2114,[2114],"[""""]","[""Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate""]","[[""Conley, J. F., Jr."",""Y. Ono"",""W. Zhuang"",""D. J. Tweet"",""W. Gao"",""S. K. Mohammed"",""R. Solanki""]]",[2002],"[""Electrochem. Solid-State Lett.""]","[""J. Conley, J. F., Y. Ono, W. Zhuang, D. J. Tweet, W. Gao, S. K. Mohammed, and R. Solanki, Electrochem. 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Kukli, A. Aidla, and L. Pung, Appl. Surf. Sci. 103, 331 (1996).""]" +,TaI5,H2O,H-Si,250–400,350–400,,350–400,,,2137,[2137],"[""""]","[""Atomic layer deposition of hexagonal-phase Ta2O5 using TaF5 and H2O""]","[[""Hill, C. W."",""Derderian, G. J."",""Sandhu, G.""]]",[2005],"[""J. Electrochem. Soc.""]","[""C. W. Hill, G. J. Derderian, and G. Sandhu, J. Electrochem. Soc. 152, G386 (2005).""]" +,TaI5,H2O,SiO2,250–400,,,,,,2137,[2137],"[""""]","[""Atomic layer deposition of hexagonal-phase Ta2O5 using TaF5 and H2O""]","[[""Hill, C. W."",""Derderian, G. J."",""Sandhu, G.""]]",[2005],"[""J. Electrochem. Soc.""]","[""C. W. Hill, G. J. Derderian, and G. Sandhu, J. Electrochem. Soc. 152, G386 (2005).""]" +,Ta(OEt)5,H2O,"Si, SLG, SS, NbxZryOz",170–325,,,,,,"123, 1563, 2139, 2145, and 2146","[123,1563,2139,2145,2146]","["""","""","""",""10.1002/cvde.200906770"",""10.1149/1.3086781""]","[""Atomic layer deposited thin films for corrosion protection"",""Physical and electrical properties of hafnium-zirconium-oxide films grown by atomic layer deposition"",""Atomic layer deposition of Ta _2 O _3 using the Ta I _5 and O _2 precursor combination"",""Atomic Layer Deposition of Ta2O5/Polyimide Nanolaminates"",""ESD and ALD Depositions of Ta2O5 Thin Films Investigated as Barriers to Copper Diffusion for Advanced Metallization""]","[[""R. Matero"",""M. Ritala"",""M. Leskela"",""T. Salo"",""J. Aromaa"",""O. Fors en""],[""Bang, S."",""Lee, S."",""Jeon, S."",""Kwon, S."",""Jeong, W."",""Kim, S."",""Jeon, H.""],[""J. Sundqvist"",""H. H ogberg"",""A. H rsta""],[""Salmi, Leo D."",""Puukilainen, Esa"",""Vehkam aki, Marko"",""Heikkil a, Mikko"",""Ritala, Mikko""],[""Salaun, A. 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Soc. 156, H311 (2009).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_041_table_032/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_041_table_032/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..f7732b2223cf9375dab318b47cec28bbe633fda9 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_041_table_032/gold.csv @@ -0,0 +1,25 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Ta(OEt)5,H2O ☼,Si,170–400,,,,,,2142,[2142],"[""""]","[""Effect of rapid thermal annealing on the structure and the electrical properties of atomic-layer-deposited Ta _2 O _5 films""]","[[""Y. S. Kim"",""S. H. K. Park"",""S. J. Yun"",""J. S. Kang""]]",[2000],"[""J. Korean Phys. Soc.""]","[""Y. S. Kim, S. H. K. Park, S. J. Yun, and J. S. Kang, J. Korean Phys. Soc. 37, 975 (2000).""]" +,Ta(OEt)5,TaCl5,Corning 7059,275–450,,,,,,2135,[2135],"[""""]","[""Nanolaminated Ta2O5-Al2O3 insulator effect on luminescent and electrical properties of thin-film electroluminescent devices""]","[[""Kim, Y. S."",""Yun, S. J.""]]",[2005],"[""Jpn. J. Appl. Phys.""]","[""Y. S. Kim and S. J. Yun, Jpn. J. Appl. Phys., Part 1 44, 4848 (2005).""]" +,Ta(OEt)5,O2 ☼,"Si, SiO2",190–285,,,,,,2149,[2149],"[""""]","[""Radical enhanced atomic layer deposition of tantalum oxide""]","[[""Niskanen, A."",""Kreissig, U."",""Leskel a, M."",""Ritala, M.""]]",[2007],"[""Chem. Mater.""]","[""A. Niskanen, U. Kreissig, M. Leskel€a, and M. Ritala, Chem. Mater. 19, 2316 (2007).""]" +,Ta(OEt)5,O2⚡,"Si, borosilicate, Pt",150–250,,,,,,2148,[2148],"[""""]","[""Increment of the Dielectric Constant of Ta _2 O _5 Thin Films by Retarding Interface Oxide Growth on Si Substrates""]","[[""H.-J. Song"",""C.-S. Lee"",""S.-W. Kang""]]",[2001],"[""Electrochem. Solid-State Lett.""]","[""H.-J. Song, C.-S. Lee, and S.-W. Kang, Electrochem. Solid-State Lett. 4, F13 (2001).""]" +,Ta(OEt)5,O2⚡+H2O,"Si, borosilicate, Pt",150–250,,,,,,2148,[2148],"[""""]","[""Increment of the Dielectric Constant of Ta _2 O _5 Thin Films by Retarding Interface Oxide Growth on Si Substrates""]","[[""H.-J. Song"",""C.-S. Lee"",""S.-W. Kang""]]",[2001],"[""Electrochem. Solid-State Lett.""]","[""H.-J. Song, C.-S. Lee, and S.-W. Kang, Electrochem. Solid-State Lett. 4, F13 (2001).""]" +,Ta(OEt)4(dmae),O3,N-Si,400,,,,,,2150,[2150],"[""""]","[""Photo-Induced Atomic Layer Deposition of Tantalum Oxide Thin Films from Ta ( OC _2 H _5 ) _5 and O _2""]","[[""Y.-H. Lee"",""J.-C. Kwak"",""B.-S. Gang"",""H.-C. Kim"",""B.-H. Choi"",""B.-K. Jeong"",""S.-H. Park"",""K.-H. Lee""]]",[2004],"[""J. Electrochem. Soc.""]","[""Y.-H. Lee, J.-C. Kwak, B.-S. Gang, H.-C. Kim, B.-H. Choi, B.-K. Jeong, S.-H. Park, and K.-H. Lee, J. Electrochem. Soc. 151, C52 (2004).""]" +,Ta(NMe2)5,H2O,H-Si,150–350,,,,,,"918, 2152, and 2153","[918,2152,2153]","["""","""",""""]","[""Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors"",""Tantalum(V) nitride inverse opals as photonic structures for visible wavelengths"",""Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants""]","[[""Maeng, W. J."",""Kim, H.""],[""Rugge, A."",""Park, J. S."",""Gordon, R. G."",""Tolbert, S. H.""],[""Maeng, W. J."",""Park, S. J."",""Kim, H.""]]","[2006,2005,2006]","[""Electrochem. Solid-State Lett."",""J. Phys. Chem. B"",""J. Vac. Sci. Technol., B""]","[""W. J. Maeng and H. Kim, Electrochem. Solid-State Lett. 9, G191 (2006)."",""A. Rugge, J. S. Park, R. G. Gordon, and S. H. Tolbert, J. Phys. Chem. B 109, 3764 (2005)."",""W. J. Maeng, S. J. Park, and H. Kim, J. Vac. Sci. Technol. B 24, 2276 (2006).""]" +,Ta(NMe2)5,O2⚡,"H-Si, Si, SiO2",100–350,,,,,,"918, 1650, 2152, and 2155","[918,1650,2152,2155]","["""","""","""",""DOI: 10.1016/j.orgel.2008.08.008""]","[""Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors"",""Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications"",""Tantalum(V) nitride inverse opals as photonic structures for visible wavelengths"",""Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers""]","[[""Maeng, W. J."",""Kim, H.""],[""Zhang, M."",""Chen, W."",""Ding, S. J."",""Liu, Z. Y."",""Huang, Y."",""Liao, Z. W."",""Zhang, D. W.""],[""Rugge, A."",""Park, J. S."",""Gordon, R. G."",""Tolbert, S. H.""],[""Hyoungsub Kim"",""Sunyoung Sohn"",""Donggeun Jung"",""Wan Joo Maeng"",""Hyungjun Kim"",""Tae Sang Kim"",""Jungseok Hahn"",""Sangyun Lee"",""Yeonjin Yi"",""Mann-Ho Cho""]]","[2006,2008,2005,2008]","[""Electrochem. Solid-State Lett."",""J. Phys. D: Appl. Phys."",""J. Phys. Chem. B"",""Org. Electron.""]","[""W. J. Maeng and H. Kim, Electrochem. Solid-State Lett. 9, G191 (2006)."",""M. Zhang, W. Chen, S. J. Ding, Z. Y. Liu, Y. Huang, Z. W. Liao, and D. W. Zhang, J. Phys. D: Appl. Phys. 41, 032007 (2008)."",""A. Rugge, J. S. Park, R. G. Gordon, and S. H. Tolbert, J. Phys. Chem. B 109, 3764 (2005)."",""H. Kim, S. Sohn, D. Jung, W. J. Maeng, H. Kim, T. S. Kim, J. Hahn, S. Lee, Y. Yi, and M.-H. Cho, Org. Electron. 9, 1140 (2008).""]" +,Ta(NEt)(NEt2)3,H2O,"Si, SiO2",50–350,,,,,,2156,[2156],"[""""]","[""Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O-2 plasma""]","[[""Heil, S. B. S."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2008],"[""J. Vac. Sci. Technol., A""]","[""S. B. S. Heil, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Vac. Sci. Technol. A 26, 472 (2008).""]" +,Ta(NEt2)5,H2O,"Si, SiO2",50–250,,,,,,2156,[2156],"[""""]","[""Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O-2 plasma""]","[[""Heil, S. B. S."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2008],"[""J. Vac. Sci. Technol., A""]","[""S. B. S. Heil, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Vac. Sci. Technol. A 26, 472 (2008).""]" +,Ta(NtBu)(tBu2pz)3,O3,Si,300–450,,,,,,2157,[2157],"[""""]","[""Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors""]","[[""D. M. Hausmann"",""P. de Rouffignac"",""A. Smith"",""R. Gordon"",""D. Monsma""]]",[2003],"[""Thin Solid Films""]","[""D. M. Hausmann, P. de Rouffignac, A. Smith, R. Gordon, and D. Monsma, Thin Solid Films 443, 1 (2003).""]" +,Ta(NtBu)-(iPrAMD)2(NMe2),H2O,Si,275–350,,,,,,2158,[2158],"[""""]","[""A pyrazolate-based metalorganic tantalum precursor that exhibits high thermal stability and its use in the atomic layer deposition of Ta2O5""]","[[""Dezelah IV, C. L."",""Wiedmann, M. K."",""Mizohata, K."",""Baird, R. J."",""Niinist o, L."",""Winter, C. H.""]]",[2007],"[""J. Am. Chem. Soc.""]","[""C. L. Dezelah IV, M. K. Wiedmann, K. Mizohata, R. J. Baird, L. Niinist€o, and C. H. Winter, J. Am. Chem. Soc. 129, 12370 (2007).""]" +WOx,,,,Amorphous,Monoclinic,,,,,,[],[],[],[],[],[],[] +,WF6+WO3,H2O,sapphire,,200,,,,,2220,[2220],"[""""]","[""Tungsten atomic layer deposition on polymers""]","[[""C.A. Wilson"",""J.A. McCormick"",""A.S. Cavanagh"",""D.N. Goldstein"",""A.W. Weimer"",""S.M. George""]]",[2008],"[""Thin Solid Films""]","[""C. Wilson, J. McCormick, A. Cavanagh, D. Goldstein, A. Weimer, and S. George, Thin Solid Films 516, 6175 (2008).""]" +,W2(NMe2)6,H2O,Si,160–200,,,,,,2223,[2223],"[""""]","[""PREPARATION OF W/Al _2 O _3 BY CHEMISORPTION OF WOCl _4 TO SURFACE SATURATION""]","[[""M. Lindblad"",""L. P. Lindfors""]]",[1993],"[""Proceedings of the 10th International Congress on Catalysis: \""New Frontiers in Catalysis\"", Budapest, Hungary, July 19-24, 1992""]","[""M. Lindblad and L. P. Lindfors, in Proceedings of the 10th International Congress on Catalysis: New Frontiers in Catalysis, Budapest, Hungary, 19-24 July 1992, Stud. Surf. Sci. Catal., edited by L. Guczi (Elsevier, Amsterdam, 1993), Vol. 75, pp. 1763–1770.""]" +IrO2,,,,Amorphous,Tetragonal,,,,,,[],[],[],[],[],[],[] +,Ir(acac)3,O3,"Si, SLG, Al2O3",,165–200,,,,,2252,[2252],"[""10.1039/c0jm00486c""]","[""(MeCp)Ir(CHD) and molecular oxygen as precursors in atomic layer deposition of iridium""]","[[""H am al ainen, Jani"",""Hatanp a a, Timo"",""Puukilainen, Esa"",""Costelle, Leila"",""Pilvi, Tero"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2010],"[""J. Mater. Chem.""]","[""J. H€am€al€ainen, T. Hatanp€a€a, E. Puukilainen, L. Costelle, T. Pilvi, M. Ritala, and M. Leskel€a, J. Mater. Chem. 20, 7669 (2010).""]" +,Ir(CpEt)(cod),O2,SiO2,,290,,,,,2248,[2248],"[""""]","[""""]",[[]],[null],"[""""]","[""S. W. Kim, S. H. Kwon, D. K. Kwak, and S. W. Kang, J. Appl. Phys. 103, 023517 (2008).""]" +PtOx,,,,Amorphous,,,,,,,[],[],[],[],[],[],[] +,Pt(acac)2,O3,"Si, SLG, Al2O3",120–130,,,,,,2273,[2273],"[""10.1149/1.3491376""]","[""Area Selective Atomic Layer Deposition by Microcontact Printing with a Water-Soluble Polymer""]","[[""Mullings, Marja N."",""Lee, Han-Bo-Ram"",""Marchack, Nathan"",""Jiang, Xirong"",""Chen, Zhebo"",""Gorlin, Yelena"",""Lin, Kuang-Po"",""Bent, Stacey F.""]]",[2010],"[""J. Electrochem. Soc.""]","[""M. N. Mullings, H. -B.-R. Lee, N. Marchack, X. Jiang, Z. Chen, Y. Gorlin, K.-P. Lin, and S. F. Bent, J. Electrochem. Soc. 157, D600 (2010).""]" +,Pt(CpMe)Me3,O2⚡,"Si, SiO2",300,,,,,,2260,[2260],"[""""]","[""Ultralow Loading Pt Nanocatalysts Prepared by Atomic Layer Deposition on Carbon Aerogels""]","[[""King, Jeffrey S."",""Wittstock, Arne"",""Biener, Juergen"",""Kucheyev, Sergei O."",""Wang, Yinmin M."",""Baumann, Theodore F."",""Giri, Sandeep K."",""Hamza, Alex V."",""Baeumer, Marcus"",""Bent, Stacey F.""]]",[2008],"[""Nano Lett.""]","[""J. S. King, A. Wittstock, J. Biener, S. O. Kucheyev, Y. M. Wang, T. F. Baumann, S. K. Giri, A. V. Hamza, M. Baeumer, and S. F. Bent, Nano Lett. 8, 2405 (2008).""]" +PbO2,,,,Amorphous,Tetragonal,Orthorhombic,,,,,[],[],[],[],[],[],[] +,Pb(thd)2,O3,Si,,150–300,150–300,,,,2275,[2275],"[""10.1021/cm801187t""]","[""Atomic Layer Deposition of Platinum Oxide and Metallic Platinum Thin Films from Pt(acac)(2) and Ozone""]","[[""H am al ainen, Jani"",""Munnik, Frans"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2008],"[""Chem. Mater.""]","[""J. H€am€al€ainen, F. Munnik, M. Ritala, and M. Leskel€a, Chem. Mater. 20, 6840 (2008).""]" +,PbPh4,O3,Si,,185–400,185–400,,,,2275,[2275],"[""10.1021/cm801187t""]","[""Atomic Layer Deposition of Platinum Oxide and Metallic Platinum Thin Films from Pt(acac)(2) and Ozone""]","[[""H am al ainen, Jani"",""Munnik, Frans"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2008],"[""Chem. Mater.""]","[""J. H€am€al€ainen, F. Munnik, M. Ritala, and M. Leskel€a, Chem. Mater. 20, 6840 (2008).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_048_table_033/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_048_table_033/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..de9ff6a40e60f73a69c3feec920264fb5096c339 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_048_table_033/gold.csv @@ -0,0 +1,37 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +BN,,,,Amorphous,Turbostratic,,,,[],[],[],[],[],[],[] +,BBr3,NH3,silica,400,750,,,49,[49],"[""""]","[""Atomic layer deposition of BN thin films""]","[[""B. M rlid"",""M. Ottosson"",""U. Pettersson"",""K. Larsson"",""J.-O. Carlsson""]]",[2002],"[""Thin Solid Films""]","[""B. Ma˚rlid, M. Ottosson, U. Pettersson, K. Larsson, and J.-O. Carlsson, Thin Solid Films 402, 167 (2002).""]" +,BBr3,NH3,Al2O3,,250–600,,,50,[50],"[""""]","[""Laser-assisted atomic layer deposition of boron nitride thin films""]","[[""Olander, J."",""Ottosson, L. M."",""Heszler, P."",""Carlsson, J. O."",""Larsson, K. M. E.""]]",[2005],"[""Chem. Vap. Deposition""]","[""J. Olander, L. M. Ottosson, P. Heszler, J. O. Carlsson, and K. M. E. Larsson, Chem. Vap. Deposition 11, 330 (2005).""]" +,BBr3,NH3☼,Al2O3,,250–600,,,50,[50],"[""""]","[""Laser-assisted atomic layer deposition of boron nitride thin films""]","[[""Olander, J."",""Ottosson, L. M."",""Heszler, P."",""Carlsson, J. O."",""Larsson, K. M. E.""]]",[2005],"[""Chem. Vap. Deposition""]","[""J. Olander, L. M. Ottosson, P. Heszler, J. O. Carlsson, and K. M. E. Larsson, Chem. Vap. Deposition 11, 330 (2005).""]" +AlN,,,,Amorphous,Hexagonal,,,,[],[],[],[],[],[],[] +,AlCl3,NH3,SLG,,500,,,477,[477],"[""10.1021/cm802195b""]","[""Atomic Layer Deposition of Aluminum Oxide Thin Films from a Heteroleptic, Amidinate-Containing Precursor""]","[[""Brazeau, Allison L."",""Barry, Sean T.""]]",[2008],"[""Chem. Mater.""]","[""A. L. Brazeau and S. T. Barry, Chem. Mater. 20, 7287 (2008).""]" +,AlCl3,NH3+H2⚡,H-Si,,350,,,480,[480],"[""""]","[""Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition""]","[[""Y. J. Lee"",""S.-W. Kang""]]",[2004],"[""Thin Solid Films""]","[""Y. J. Lee and S.-W. Kang, Thin Solid Films 446, 227 (2004).""]" +,AlMe3,NH3,Corning 7059,,325–425,,,484,[484],"[""""]","[""Reactions of trimethylaluminum and ammonia on alumina at 600 K ---surface chemical aspects of AlN thin film growth""]","[[""H. Liu"",""D. C. Bertolet"",""Rogers, Jr., J. W.""]]",[1995],"[""Surf. Sci.""]","[""H. Liu, D. C. Bertolet, and J. W. Rogers, Jr., Surf. Sci. 340, 88 (1995).""]" +,AlMe3,NH3,Si,325–400,,,,488,[488],"[""""]","[""Growth of aluminum nitride on porous alumina and silica through separate saturated gas--solid reactions of trimethylaluminum and ammonia""]","[[""R. L. Puurunen"",""A. Root"",""P. Sarv"",""M. M. Viitanen"",""H. H. Brongersma"",""M. Lindblad"",""A. O. I. Krause""]]",[2002],"[""Chem. Mater.""]","[""R. L. Puurunen, A. Root, P. Sarv, M. M. Viitanen, H. H. Brongersma, M. Lindblad, and A. O. I. Krause, Chem. Mater. 14, 720 (2002).""]" +,AlMe3,NH3,Sapphire,,1200,,,489,[489],"[""10.1063/1.2966482""]","[""Electronic structure of the interface of aluminum nitride with Si(100)""]","[[""Badylevich, M."",""Shamuilia, S."",""Afanas'ev, V. V."",""Stesmans, A."",""Fedorenko, Y. G."",""Zhao, C.""]]",[2008],"[""J. Appl. Phys.""]","[""M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, Y. G. Fedorenko, and C. Zhao, J. Appl. Phys. 104, 093713 (2008).""]" +,AlEt3,NH3,Sapphire,,450,,,495,[495],"[""10.3365/eml.2009.06.083""]","[""Fabrication and Properties of AlN Film on GaN Substrate by Using Remote Plasma Atomic Layer Deposition Method""]","[[""Kim, Kwang-Ho"",""Kwak, No-Won"",""Lee, Soo Hong""]]",[2009],"[""Electron. Mater. Lett.""]","[""K.-H. Kim, N.-W. Kwak, and S. H. Lee, Electron. Mater. Lett. 5, 83 (2009).""]" +,Al(NMe2)3,NH3,Ge,200–250,,,,501,[501],"[""""]","[""Chemical Composition of AlN Thin Films Deposited at 523--723 K Using Dimethylethylamine Alane and Ammonia""]","[[""Kidder, Jr., J. N."",""H. K. Yun"",""Rogers, Jr., J. W."",""T. P. Pearsall""]]",[1998],"[""Chem. Mater.""]","[""J. N. Kidder, Jr., H. K. Yun, J. W. Rogers, Jr., and T. P. Pearsall, Chem. Mater. 10, 777 (1998).""]" +,Me2EtN:AlH3,NH3,Al2O3,,300–380,,,498,[498],"[""""]","[""Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si (100)""]","[[""H. Liu"",""Rogers, Jr., J. W.""]]",[1999],"[""J. Vac. Sci. Technol., A""]","[""H. Liu and J. W. Rogers, Jr., J. Vac. Sci. Technol. A 17, 325 (1999).""]" +,Me2EtN:AlH3,NH3,Si,300–380,,,,498,[498],"[""""]","[""Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si (100)""]","[[""H. Liu"",""Rogers, Jr., J. W.""]]",[1999],"[""J. Vac. Sci. Technol., A""]","[""H. Liu and J. W. Rogers, Jr., J. Vac. Sci. Technol. A 17, 325 (1999).""]" +TiN,,,,Amorphous,Cubic,,,,[],[],[],[],[],[],[] +,TiCl4,NH3,"SLG, Si, H-Si, SiO2, HfSiOx, HfO2",,300–550,,,"933, 938–940, 946, 951, 952, and 955","[933,938,939,940,946,951,952,955]","["""",""10.1116/1.582391"","""","""","""","""","""",""""]","[""Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method"",""Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method"",""Characteristics of TiN thin films grown by ALD using TiCl _4 and NH _3"",""TiN diffusion barrier grown by atomic layer deposition method for Cu metallization"",""Physical Properties of Highly Conformal TiN Thin films Grown by Atomic Layer Deposition"",""Growth mechanism of TiN film on dielectric films and the effects on the work function"",""The effect of deposition temperature on the properties of TiN diffusion barriers prepared by atomic layer chemical vapor deposition"",""Properties of TiN films grown by atomic-layer chemical vapor deposition with a modified gaseous-pulse sequence""]","[[""L. Hiltunen"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen""],[""Hyeongtag Jeon"",""June-Woo Lee"",""Young-Do Kim"",""Deok-Soo Kim"",""Kyoung-Soo Yi""],[""C. H. Ahn"",""S. G. Cho"",""H. J. Lee"",""K. H. Park"",""S. H. Jeong""],[""J. Uhm"",""H. Jeon""],[""J. Kim"",""H. Hong"",""S. Ghosh"",""K.-Y. Oh"",""C. Lee""],[""Choi, K."",""Lysaght, P."",""Alshareef, H."",""Huffman, C."",""Wen, H. C."",""Harris, R."",""Luan, H."",""Hung, P. Y."",""Sparks, C."",""Cruz, M."",""Matthews, K."",""Majhi, P."",""Lee, B. H.""],[""Cheng, H. E."",""Lee, W. J."",""Hsu, C. M.""],[""Cheng, H. E."",""Lee, W. J.""]]","[1988,2000,2001,2001,2003,2005,2005,2006]","[""Thin Solid Films"",""J. Vac. Sci. Technol., A"",""Met. Mater. Int."",""Jpn. J. Appl. Phys., Part 1"",""Jpn. J. Appl. Phys., Part 1"",""Thin Solid Films"",""Thin Solid Films"",""Mater. Chem. Phys.""]","[""L. Hiltunen, M. Leskel€a, M. M€akel€a, L. Niinist€o, E. Nyk€anen, and P. Soininen, Thin Solid Films 166, 149 (1988)."",""H. Jeon, J.-W. Lee, Y.-D. Kim, D.-S. Kim, and K.-S. Yi, J. Vac. Sci. Technol. A 18, 1595 (2000)."",""C. H. Ahn, S. G. Cho, H. J. Lee, K. H. Park, and S. H. Jeong, Met. Mater. Int. 7, 621 (2001)."",""J. Uhm and H. Jeon, Jpn. J. Appl. Phys., Part 1 40, 4657 (2001)."",""J. Kim, H. Hong, S. Ghosh, K.-Y. Oh, and C. Lee, Jpn. J. Appl. Phys., Part 1 42, 1375 (2003)."",""K. Choi, P. Lysaght, H. Alshareef, C. Huffman, H. C. Wen, R. Harris, H. Luan, P. Y. Hung, C. Sparks, M. Cruz, K. Matthews, P. Majhi, and B. H. Lee, Thin Solid Films 486, 141 (2005)."",""H. E. Cheng, W. J. Lee, and C. M. Hsu, Thin Solid Films 485, 59 (2005)."",""H. E. Cheng and W. J. Lee, Mater. Chem. Phys. 97, 315 (2006).""]" +,TiCl4,NH3-Zn,SLG,,400–500,,,934 and 935,"[934,935]","["""",""""]","[""Atomic layer epitaxy growth of TiN thin films"",""Effects of intermediate zinc pulses on properties of TiN and NbN films deposited by atomic layer epitaxy""]","[[""M. Ritala"",""M. Leskel a"",""E. Rauhala"",""P. Haussalo""],[""M. Ritala"",""T. Asikainen"",""M. Leskel a"",""J. Jokinen"",""R. Lappalainen"",""M. Utriainen"",""L. Niinist o"",""E. Ristolainen""]]","[1995,1997]","[""J. Electrochem. Soc."",""Appl. Surf. Sci.""]","[""M. Ritala, M. Leskel€a, E. Rauhala, and P. Haussalo, J. Electrochem. Soc. 142, 2731 (1995)."",""M. Ritala, T. Asikainen, M. Leskel€a, J. Jokinen, R. Lappalainen, M. Utriainen, L. Niinist€o, and E. Ristolainen, Appl. Surf. Sci. 120, 199 (1997).""]" +,TiCl4,NH3-AlMe3,GaAs,275,,,,957,[957],"[""""]","[""Passivation of GaAs surface by atomic-layer-deposited titanium nitride""]","[[""Bosund, M."",""Aierken, A."",""Tiilikainen, J."",""Hakkarainen, T."",""Lipsanen, H.""]]",[2008],"[""Appl. Surf. Sci.""]","[""M. Bosund, A. Aierken, J. Tiilikainen, T. Hakkarainen, and H. Lipsanen, Appl. Surf. Sci. 254, 5385 (2008).""]" +,TiCl4,H2+N2⚡,"Si, SiO2",,100–400,,,"958, 960, and 962–965","[958,960,962,963,964,965]","["""","""","""","""",""10.1149/1.2988651"",""10.3938/jkps.57.806""]","[""Plasma-enhanced ALD of titanium-silicon-nitride using TiCl4, SiH4, and N-2/H-2/Ar plasma"",""Low-temperature deposition of TiN by plasma-assisted atomic layer deposition"",""Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films"",""Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor"",""Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications"",""Investigating the TiN Film Quality and Growth Behavior for Plasma-enhanced Atomic Layer Deposition Using TiCl4 and N-2/H-2/Ar Radicals""]","[[""Park, J. S."",""Kang, S. W.""],[""Heil, S. B. S."",""Langereis, E."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""],[""Park, J. S."",""Kang, S. W."",""Kim, H.""],[""Heil, S. B. S."",""van Hemmen, J. L."",""Hodson, C. J."",""Singh, N."",""Klootwijk, J. H."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""],[""Knoops, H. C. M."",""Baggetto, L."",""Langereis, E."",""van de Sanden, M. C. M."",""Klootwijk, J. H."",""Roozeboom, F."",""Niessen, R. A. H."",""Notten, P. H. L."",""Kessels, W. M. M.""],[""Kwon, Jung-Dae"",""Park, Jin-Seong""]]","[2004,2006,2006,2007,2008,2010]","[""Electrochem. Solid-State Lett."",""J. Electrochem. Soc."",""J. Vac. Sci. Technol., B"",""J. Vac. Sci. Technol., A"",""J. Electrochem. Soc."",""J. Korean Phys. Soc.""]","[""J. S. Park and S. W. Kang, Electrochem. Solid-State Lett. 7, C87 (2004)."",""S. B. S. Heil, E. Langereis, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. 153, G956 (2006)."",""J. S. Park, S. W. Kang, and H. Kim, J. Vac. Sci. Technol. B 24, 1327 (2006)."",""S. B. S. Heil, J. L. van Hemmen, C. J. Hodson, N. Singh, J. H. Klootwijk, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Vac. Sci. Technol. A 25, 1357 (2007)."",""H. C. M. Knoops, L. Baggetto, E. Langereis, M. C. M. van de Sanden, J. H. Klootwijk, F. Roozeboom, R. A. H. Niessen, P. H. L. Notten, and W. M. M. Kessels, J. Electrochem. Soc. 155, G287 (2008)."",""J.-D. Kwon and J.-S. Park, J. Korean Phys. Soc. 57, 806 (2010).""]" +,TiCl4,DMHy,SLG,250,300–400,,,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +,TiCl4,tBuNH2,"SLG, borosilicate",400,400,,,967,[967],"[""""]","[""Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources""]","[[""M. Juppo"",""P. Al en"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2002],"[""Electrochem. Solid-State Lett.""]","[""M. Juppo, P. Al\u0003en, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Electrochem. Solid-State Lett. 5, C4 (2002).""]" +,TiCl4,allylNH2,"SLG, borosilicate",400,400,,,967,[967],"[""""]","[""Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources""]","[[""M. Juppo"",""P. Al en"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2002],"[""Electrochem. Solid-State Lett.""]","[""M. Juppo, P. Al\u0003en, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Electrochem. Solid-State Lett. 5, C4 (2002).""]" +,TiI4,NH3,SLG,,400–500,,,968,[968],"[""""]","[""Atomic layer epitaxy growth of TiN thin films from TiI _4 and NH _3""]","[[""M. Ritala"",""M. Leskel a"",""E. Rauhala"",""J. Jokinen""]]",[1998],"[""J. Electrochem. Soc.""]","[""M. Ritala, M. Leskel€a, E. Rauhala, and J. Jokinen, J. Electrochem. Soc. 145, 2914 (1998).""]" +,TiI4,tBuNH2,"SLG, borosilicate",400,400,,,967,[967],"[""""]","[""Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources""]","[[""M. Juppo"",""P. Al en"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2002],"[""Electrochem. Solid-State Lett.""]","[""M. Juppo, P. Al\u0003en, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Electrochem. Solid-State Lett. 5, C4 (2002).""]" +,TiI4,allylNH2,"SLG, borosilicate",400,400,,,967,[967],"[""""]","[""Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources""]","[[""M. Juppo"",""P. Al en"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2002],"[""Electrochem. Solid-State Lett.""]","[""M. Juppo, P. Al\u0003en, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Electrochem. Solid-State Lett. 5, C4 (2002).""]" +,Ti(NMe2)4,NH3,H-Si,200–300,350,,,975,[975],"[""""]","[""Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH _3""]","[[""H. K. Kim"",""J. Y. Kim"",""J. Y. Park"",""Y. Kim"",""Y. D. Kim"",""H. Jeon"",""W. M. Kim""]]",[2002],"[""J. Korean Phys. Soc.""]","[""H. K. Kim, J. Y. Kim, J. Y. Park, Y. Kim, Y. D. Kim, H. Jeon, and W. M. Kim, J. Korean Phys. Soc. 41, 739 (2002).""]" +,Ti(NMe2)4,NH3,"Si, SiO2",180,180,,,973 and 980,"[973,980]","["""",""""]","[""Effect of post-treatments on atomic layer deposition of TiN thin films using tetrakis(dimethylamido)titanium and ammonia"",""Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3""]","[[""J. H. Yun"",""E. S. Choi"",""C. M. Jang"",""C. S. Lee""],[""Fillot, F."",""Morel, T."",""Minoret, S."",""Matko, I."",""Maitrejean, S."",""Guillaumot, B."",""Chenevier, B."",""Billon, T.""]]","[2002,2005]","[""Jpn. J. Appl. Phys., Part 2"",""Microelectron. Eng.""]","[""J. H. Yun, E. S. Choi, C. M. Jang, and C. S. Lee, Jpn. J. Appl. Phys., Part 2 41, L418 (2002)."",""F. Fillot, T. Morel, S. Minoret, I. Matko, S. Maitrejean, B. Guillaumot, B. Chenevier, and T. Billon, Microelectron. Eng. 82, 248 (2005).""]" +,Ti(NMe2)4,NH3⚡,SiO2,250,,,,988 and 989,"[988,989]","["""",""""]","[""Remote plasma-enhanced atomic-layer deposition of TiN by using TDMAT with a NH _3 plasma"",""Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes""]","[[""J. Y. Kim"",""D. Y. Kim"",""H. O. Park"",""H. Jeon""],[""J. Y. Kim"",""D. Y. Kim"",""H. O. Park"",""H. Jeon""]]","[2004,2005]","[""J. Korean Phys. Soc."",""J. Electrochem. Soc.""]","[""J. Y. Kim, D. Y. Kim, H. O. Park, and H. Jeon, J. Korean Phys. Soc. 45, 1639 (2004)."",""J. Y. Kim, D. Y. Kim, H. O. Park, and H. Jeon, J. Electrochem. Soc. 152, G29 (2005).""]" +,Ti(NMe2)4,NH3+H2⚡,Al2O3,,150–300,,,493 and 990,"[493,990]","[""10.1016/j.apsusc.2010.05.085"",""10.1149/1.3459932""]","[""GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride"",""Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications""]","[[""Bosund, M."",""Mattila, P."",""Aierken, A."",""Hakkarainen, T."",""Koskenvaara, H."",""Sopanen, M."",""Airaksinen, V-M"",""Lipsanen, H.""],[""Jeon, Sanghun"",""Park, Sungho""]]","[2010,2010]","[""Appl. Surf. Sci."",""J. Electrochem. Soc.""]","[""M. Bosund, P. Mattila, A. Aierken, T. Hakkarainen, H. Koskenvaara, M. Sopanen, V.-M. Airaksinen, and H. Lipsanen, Appl. Surf. Sci. 256, 7434 (2010)."",""S. Jeon and S. Park, J. Electrochem. Soc. 157, H930 (2010).""]" +,Ti(NMe2)4,N2⚡,SiO2,250,,,,989,[989],"[""""]","[""Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes""]","[[""J. Y. Kim"",""D. Y. Kim"",""H. O. Park"",""H. Jeon""]]",[2005],"[""J. Electrochem. Soc.""]","[""J. Y. Kim, D. Y. Kim, H. O. Park, and H. Jeon, J. Electrochem. Soc. 152, G29 (2005).""]" +,Ti(NMe2)4,N2⚡,SiO2,,200,,,994,[994],"[""""]","[""Plasma-enhanced atomic layer deposition of Ru-TiN thin films for copper diffusion barrier metals""]","[[""Kwon, S. H."",""Kwon, O. K."",""Min, J. S."",""Kang, S. W.""]]",[2006],"[""J. Electrochem. Soc.""]","[""S. H. Kwon, O. K. Kwon, J. S. Min, and S. W. Kang, J. Electrochem. Soc. 153, G578 (2006).""]" +,Ti(NMe2)4,H2⚡,"Si, SiO2",150–250,150,,,989 and 995,"[989,995]","["""",""""]","[""Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes"",""Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient""]","[[""J. Y. Kim"",""D. Y. Kim"",""H. O. Park"",""H. Jeon""],[""Caubet, P."",""Blomberg, T."",""Benaboud, R."",""Wyon, C."",""Blanquet, E."",""Gonchond, J. P."",""Juhel, M."",""Bouvet, P."",""Gros-Jean, M."",""Michailos, J."",""Richard, C."",""Iteprat, B.""]]","[2005,2008]","[""J. Electrochem. Soc."",""J. Electrochem. Soc.""]","[""J. Y. Kim, D. Y. Kim, H. O. Park, and H. Jeon, J. Electrochem. Soc. 152, G29 (2005)."",""P. Caubet, T. Blomberg, R. Benaboud, C. Wyon, E. Blanquet, J. P. Gonchond, M. Juhel, P. Bouvet, M. Gros-Jean, J. Michailos, C. Richard, and B. Iteprat, J. Electrochem. Soc. 155, H625 (2008).""]" +,Ti(NEtMe)4,NH3,"Si, SiO2",150–220,,,,996 and 997,"[996,997]","["""",""""]","[""Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis(ethylmethylamino)-Titanium and Ammonia"",""Applicability of ALE TiN films as Cu/Si diffusion barriers""]","[[""J.-S. Min"",""Y.-W. Son"",""W.-G. Kang"",""S.-S. Chun"",""S.-W. Kang""],[""D.-J. Kim"",""Y.-B. Jung"",""M.-B. Lee"",""Y.-H. Lee"",""J.-H. Lee"",""J.-H. Lee""]]","[1998,2000]","[""Jpn. J. Appl. Phys., Part 1"",""Thin Solid Films""]","[""J.-S. Min, Y.-W. Son, W.-G. Kang, S.-S. Chun, and S.-W. Kang, Jpn. J. Appl. Phys., Part 1 37, 4999 (1998)."",""D.-J. Kim, Y.-B. Jung, M.-B. Lee, Y.-H. Lee, J.-H. Lee, and J.-H. Lee, Thin Solid Films 372, 276 (2000).""]" +Cu3N,,,,Amorphous,Cubic,,,,[],[],[],[],[],[],[] +,[Cu(sBuAMD)]2,NH3,Ru,,140–300,,,1140,[1140],"[""""]","[""Thin, continuous, and conformal copper films by reduction of atomic layer deposited copper nitride""]","[[""Li, Z. W."",""Gordon, R. G.""]]",[2006],"[""Chem. Vap. Deposition""]","[""Z. W. Li and R. G. Gordon, Chem. Vap. Deposition 12, 435 (2006).""]" +,Cu(hfac)2,H2O-NH3,SiO2,,210–300,,,1141,[1141],"[""""]","[""Growth of copper(I) nitride by ALD using copper(II) hexafluoroacetylacetonate, water, and ammonia as precursors""]","[[""T orndahl, T."",""Ottosson, M."",""Carlsson, J. O.""]]",[2006],"[""J. Electrochem. Soc.""]","[""T. T€orndahl, M. Ottosson, and J. O. Carlsson, J. Electrochem. Soc. 153, C146 (2006).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_049_table_034/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_049_table_034/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..d4fa14d6102551a1e33d96ede8c63ccf675bcefb --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_049_table_034/gold.csv @@ -0,0 +1,38 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +GaN,,,,Amorphous,Cubic,,,,[],[],[],[],[],[],[] +,GaCl,NH3,GaN,,300–400,,,1376 and 1377,"[1376,1377]","["""",""""]","[""Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN"",""Halogen-transport atomic-layer epitaxy of cubic GaN monitored by in situ gravimetric method""]","[[""C. Adelmann"",""J. Brault"",""J.-L. Rouvi ere"",""H. Mariette"",""G. Mula"",""B. Daudin""],[""A. Koukitu"",""Y. Kumagai"",""T. Taki"",""H. Seki""]]","[2002,1999]","[""J. Appl. Phys."",""Jpn. J. Appl. Phys., Part 1""]","[""C. Adelmann, J. Brault, J.-L. Rouvie`re, H. Mariette, G. Mula, and B. Daudin, J. Appl. Phys. 91, 5498 (2002)."",""A. Koukitu, Y. Kumagai, T. Taki, and H. Seki, Jpn. J. Appl. Phys., Part 1 38, 4980 (1999).""]" +,GaCl,NH3,GaAs,300–400,,,,1377,[1377],"[""""]","[""Halogen-transport atomic-layer epitaxy of cubic GaN monitored by in situ gravimetric method""]","[[""A. Koukitu"",""Y. Kumagai"",""T. Taki"",""H. Seki""]]",[1999],"[""Jpn. J. Appl. Phys., Part 1""]","[""A. Koukitu, Y. Kumagai, T. Taki, and H. Seki, Jpn. J. Appl. Phys., Part 1 38, 4980 (1999).""]" +,GaCl3,NH3,GaAs(001),500,,,,1378,[1378],"[""""]","[""In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic- GaN""]","[[""Y. Kumagai"",""M. Mayumi"",""A. Koukitu"",""H. Seki""]]",[2000],"[""Appl. Surf. Sci.""]","[""Y. Kumagai, M. Mayumi, A. Koukitu, and H. Seki, Appl. Surf. Sci. 159/ 160, 427 (2000).""]" +,GaCl3,NH3,GaAs(111)e,,500,,,1378,[1378],"[""""]","[""In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic- GaN""]","[[""Y. Kumagai"",""M. Mayumi"",""A. Koukitu"",""H. Seki""]]",[2000],"[""Appl. Surf. Sci.""]","[""Y. Kumagai, M. Mayumi, A. Koukitu, and H. Seki, Appl. Surf. Sci. 159/ 160, 427 (2000).""]" +,GaCl3,NH3,H-Si,,650,,,1379,[1379],"[""""]","[""Layer-by-layer growth of GaN on GaAs substrates by alternate supply of GaCl _3 and NH _3""]","[[""H. Tsuchiya"",""M. Akamatsu"",""M. Ishida"",""F. Hasegawa""]]",[1996],"[""Jpn. J. Appl. Phys., Part 2""]","[""H. Tsuchiya, M. Akamatsu, M. Ishida, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 35, L748 (1996).""]" +,GaMe3,NH3,AlNe,,550–650,,,1380,[1380],"[""10.1116/1.3106619""]","[""Atomic layer deposition of GaN using GaCl3 and NH3""]","[[""Kim, Oh Hyun"",""Kim, Dojun"",""Anderson, Tim""]]",[2009],"[""J. Vac. Sci. Technol., A""]","[""O. H. Kim, D. Kim, and T. Anderson, J. Vac. Sci. Technol. A 27, 923 (2009).""]" +,GaMe3,NH3,AlNe,,800–900,,,1384,[1384],"[""""]","[""Growth of wurtzite GaN on (001) GaAs substrates at low temperature by atomic layer epitaxy""]","[[""S.-C. Huang"",""H.-Y. Wang"",""C.-J. Hsu"",""J.-R. Gong"",""C.-I. Chiang"",""S.-L. Tu"",""H. Chang""]]",[1998],"[""J. Mater. Sci. Lett.""]","[""S.-C. Huang, H.-Y. Wang, C.-J. Hsu, J.-R. Gong, C.-I. Chiang, S.-L. Tu, and H. Chang, J. Mater. Sci. Lett. 17, 1281 (1998).""]" +,GaMe3,NH3,GaAs(001),,500–650,,,1383,[1383],"[""""]","[""Effect of hydrogen on the indium incorporation in InGaN epitaxial films""]","[[""E. L. Piner"",""M. K. Behbehani"",""N. A. El-Masry"",""F. G. McIntosh"",""J. C. Roberts"",""K. S. Boutros"",""S. M. Bedair""]]",[1997],"[""Appl. Phys. Lett.""]","[""E. L. Piner, M. K. Behbehani, N. A. El-Masry, F. G. McIntosh, J. C. Roberts, K. S. Boutros, and S. M. Bedair, Appl. Phys. Lett. 70, 461 (1997).""]" +,GaEt3,NH3,AlNe,,450–900,,,1385,[1385],"[""""]","[""Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH _3""]","[[""H. Y. Wang"",""S. C. Huang"",""T. Y. Yan"",""J. R. Gong"",""T. Y. Lin"",""Y. F. Chen""]]",[1999],"[""Mater. Sci. Eng., B""]","[""H. Y. Wang, S. C. Huang, T. Y. Yan, J. R. Gong, T. Y. Lin, and Y. F. Chen, Mater. Sci. Eng., B 57, 218 (1999).""]" +,GaEt3,NH3,SiC(0001)e,,250–500,,,1387,[1387],"[""""]","[""High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers""]","[[""M. Asif Khan"",""J. N. Kuznia"",""D. T. Olson"",""J. M. Van Hove"",""M. Blasingame"",""L. F. Reitz""]]",[1992],"[""Appl. Phys. Lett.""]","[""M. Asif Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, and L. F. Reitz, Appl. Phys. Lett. 60, 2917 (1992).""]" +,GaEt3,NH3,SiC(0001),150–170,170–250,,,1387,[1387],"[""""]","[""High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers""]","[[""M. Asif Khan"",""J. N. Kuznia"",""D. T. Olson"",""J. M. Van Hove"",""M. Blasingame"",""L. F. Reitz""]]",[1992],"[""Appl. Phys. Lett.""]","[""M. Asif Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, and L. F. Reitz, Appl. Phys. Lett. 60, 2917 (1992).""]" +ZrNx,,,,Amorphous,,,,,[],[],[],[],[],[],[] +,Zr(NMe2)4,NH3,Si,150–250,,,,1622,[1622],"[""""]","[""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""W.-H. Nam"",""S.-W. Rhee""]]",[2004],"[""Chem. Vap. Deposition""]","[""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" +,Zr(NEtMe)4,NH3,Si,150–250,,,,1622,[1622],"[""""]","[""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""W.-H. Nam"",""S.-W. Rhee""]]",[2004],"[""Chem. Vap. Deposition""]","[""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" +,Zr(NEt2)4,NH3,Si,150–250,,,,1622,[1622],"[""""]","[""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""W.-H. Nam"",""S.-W. Rhee""]]",[2004],"[""Chem. Vap. Deposition""]","[""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" +,Zr(NEt2)4,N2⚡,Si,300,,,,1623,[1623],"[""10.1016/j.ica.2009.07.004""]","[""Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD""]","[[""Potts, Stephen E."",""Carmalt, Claire J."",""Blackman, Christopher S."",""Abou-Chahine, Fawzi"",""Leick, Noemi"",""Kessels, W. M. M."",""Davies, Hywel O."",""Heys, Peter N.""]]",[2010],"[""Inorg. Chim. Acta""]","[""S. E. Potts, C. J. Carmalt, C. S. Blackman, F. Abou-Chahine, N. Leick, W. M. M. Kessels, H. O. Davies, and P. N. Heys, Inorg. Chim. Acta 363, 1077 (2010).""]" +NbN,,,,Amorphous,Cubic,Hexagonal,,,[],[],[],[],[],[],[] +,NbCl5,NH3,"SLG, SiO2, Al2O3",,400–500,,,"933, 1630, and 1632","[933,1630,1632]","["""",""10.1002/cvde.200906795"",""""]","[""Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method"",""Etching of Nb2O5 Thin Films by NbCl5"",""NbCl (s) AS A PRECURSOR IN ATOMIC LAYER EPITAXY""]","[[""L. Hiltunen"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen""],[""Knapas, Kjell"",""Rahtu, Antti"",""Ritala, Mikko""],[""K.-E. Elers"",""M. Ritala"",""M. Leskela"",""E. Rauhala""]]","[1988,2009,1994]","[""Thin Solid Films"",""Chem. Vap. Deposition"",""Appl. Surf. Sci.""]","[""L. Hiltunen, M. Leskel€a, M. M€akel€a, L. Niinist€o, E. Nyk€anen, and P. Soininen, Thin Solid Films 166, 149 (1988)."",""K. Knapas, A. Rahtu, and M. Ritala, Chem. Vap. Deposition 15, 269 (2009)."",""K.-E. Elers, M. Ritala, M. Leskel€a, and E. Rauhala, Appl. Surf. Sci. 82/ 83, 468 (1994).""]" +,NbCl5,NH3,"SLG, borosilicate",250–300,,,,1631,[1631],"[""10.1021/la902289h""]","[""Reaction Mechanism Studies on Atomic Layer Deposition of Nb2O5 from Nb(OEt)(5) and Water""]","[[""Knapas, Kjell"",""Rahtu, Antti"",""Ritala, Mikko""]]",[2010],"[""Langmuir""]","[""K. Knapas, A. Rahtu, and M. Ritala, Langmuir 26, 848 (2010).""]" +,NbCl5,NH3-Zn,SLG,,500,500,,935 and 1630,"[935,1630]","["""",""10.1002/cvde.200906795""]","[""Effects of intermediate zinc pulses on properties of TiN and NbN films deposited by atomic layer epitaxy"",""Etching of Nb2O5 Thin Films by NbCl5""]","[[""M. Ritala"",""T. Asikainen"",""M. Leskel a"",""J. Jokinen"",""R. Lappalainen"",""M. Utriainen"",""L. Niinist o"",""E. Ristolainen""],[""Knapas, Kjell"",""Rahtu, Antti"",""Ritala, Mikko""]]","[1997,2009]","[""Appl. Surf. Sci."",""Chem. Vap. Deposition""]","[""M. Ritala, T. Asikainen, M. Leskel€a, J. Jokinen, R. Lappalainen, M. Utriainen, L. Niinist€o, and E. Ristolainen, Appl. Surf. Sci. 120, 199 (1997)."",""K. Knapas, A. Rahtu, and M. Ritala, Chem. Vap. Deposition 15, 269 (2009).""]" +,NbCl5,DMHy,SLG,,400,,,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +MoN,,,,Amorphous,Cubic,Hexagonal,Tetragonal,,[],[],[],[],[],[],[] +,MoCl5,NH3,"SLG, Si",,350–500,450–500,,933 and 1635,"[933,1635]","["""",""10.1088/0268-1242/25/7/075009""]","[""Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method"",""Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application""]","[[""L. Hiltunen"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen""],[""Hinz, J."",""Bauer, A. J."",""Frey, L.""]]","[1988,2010]","[""Thin Solid Films"",""Semicond. Sci. Technol.""]","[""L. Hiltunen, M. Leskel€a, M. M€akel€a, L. Niinist€o, E. Nyk€anen, and P. Soininen, Thin Solid Films 166, 149 (1988)."",""J. Hinz, A. J. Bauer, and L. Frey, Semicond. Sci. Technol. 25, 075009 (2010).""]" +,MoCl5,NH3-Zn,SLG,,500,500,,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +,MoCl5,DMHy,SLG,,500,500,,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +,Mo(tBuN)2(NMe2)2,NH3,"Si, SiO2, Ni, Cr",260–300,,,260–300,1636,[1636],"[""""]","[""Deposition of molybdenum thin films by an alternate supply of MoCl _5 and Zn""]","[[""M. Juppo"",""M. Vehkam aki"",""M. Ritala"",""M. Leskela""]]",[1998],"[""J. Vac. Sci. Technol., A""]","[""M. Juppo, M. Vehkam€aki, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. A 16, 2845 (1998).""]" +,Mo(tBuN)2(NEt2)2,NH3,Si,285–300,,,285–300,1638,[1638],"[""""]","[""Atomic Layer Deposition of Molybdenum Nitride from Bis(tert-butylimido)-bis(dimethylamido)molybdenum and Ammonia onto Several Types of Substrate Materials with Equal Growth per Cycle""]","[[""Miikkulainen, V."",""Suvanto, M."",""Pakkanen, T.A.""]]",[2007],"[""Chem. Mater.""]","[""V. Miikkulainen, M. Suvanto, and T. Pakkanen, Chem. Mater. 19, 263 (2007).""]" +InN,,,,Amorphous,Hexagonal,,,,[],[],[],[],[],[],[] +,In,N2☼,Sapphiree,,440,,,1762,[1762],"[""10.1016/j.tsf.2009.02.059""]","[""Thin films of In2O3 by atomic layer deposition using In(acac)(3)""]","[[""Nilsen, O."",""Balasundaraprabhu, R."",""Monakhov, E. V."",""Muthukumarasamy, N."",""Fjellv g, H."",""Svensson, B. G.""]]",[2009],"[""Thin Solid Films""]","[""O. Nilsen, R. Balasundaraprabhu, E. V. Monakhov, N. Muthukumarasamy, H. Fjellva˚g, and B. G. Svensson, Thin Solid Films 517, 6320 (2009).""]" +,InMe2Et,NH3,AlNe,,480,,,485,[485],"[""""]","[""Low temperature deposition of AlN films by an alternate supply of trimethylaluminum and ammonia""]","[[""D. Riihela"",""M. Ritala"",""R. Matero"",""M. Leskela"",""J. Jokinen"",""P. Haussalo""]]",[1996],"[""Chem. Vap. Deposition""]","[""D. Riihel€a, M. Ritala, R. Matero, M. Leskel€a, J. Jokinen, and P. Haussalo, Chem. Vap. Deposition 2, 277 (1996).""]" +,InMe2Et,NH3,AlN,,480,,,485,[485],"[""""]","[""Low temperature deposition of AlN films by an alternate supply of trimethylaluminum and ammonia""]","[[""D. Riihela"",""M. Ritala"",""R. Matero"",""M. Leskela"",""J. Jokinen"",""P. Haussalo""]]",[1996],"[""Chem. Vap. Deposition""]","[""D. Riihel€a, M. Ritala, R. Matero, M. Leskel€a, J. Jokinen, and P. Haussalo, Chem. Vap. Deposition 2, 277 (1996).""]" +HfNx,,,,Amorphous,Cubic,,,,[],[],[],[],[],[],[] +,Hf(NMe2)4,NH3,Si,150–250,,,,1622,[1622],"[""""]","[""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""W.-H. Nam"",""S.-W. Rhee""]]",[2004],"[""Chem. Vap. Deposition""]","[""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" +,Hf(NEtMe)4,NH3,"Si, Ge",150–250,,,,501 and 1622,"[501,1622]","["""",""""]","[""Chemical Composition of AlN Thin Films Deposited at 523--723 K Using Dimethylethylamine Alane and Ammonia"",""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""Kidder, Jr., J. N."",""H. K. Yun"",""Rogers, Jr., J. W."",""T. P. Pearsall""],[""W.-H. Nam"",""S.-W. Rhee""]]","[1998,2004]","[""Chem. Mater."",""Chem. Vap. Deposition""]","[""J. N. Kidder, Jr., H. K. Yun, J. W. Rogers, Jr., and T. P. Pearsall, Chem. Mater. 10, 777 (1998)."",""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" +,Hf(NEtMe)4,H2⚡,SiO2,,250,,,2118,[2118],"[""""]","[""Highly conductive HfNx films prepared by plasma-assisted atomic layer deposition""]","[[""Kim, E. J."",""Kim, D. H.""]]",[2006],"[""Electrochem. Solid-State Lett.""]","[""E. J. Kim and D. H. Kim, Electrochem. Solid-State Lett. 9, C123 (2006).""]" +,Hf(NEt2)4,NH3,Si,150–250,,,,1622,[1622],"[""""]","[""Atomic Layer Deposition of ZrO _2 Thin Films Using Dichlorobis[bis-(trimethylsilyl)amido]zirconium and Water""]","[[""W.-H. Nam"",""S.-W. Rhee""]]",[2004],"[""Chem. Vap. Deposition""]","[""W.-H. Nam and S.-W. Rhee, Chem. Vap. Deposition 10, 201 (2004).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_050_table_035/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_050_table_035/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..bd554168a8c2f09ce6fb3c63e033e2466eb8cdb3 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_050_table_035/gold.csv @@ -0,0 +1,32 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +TaNx,,,,Amorphous,Cubic,Orthorhombic,,,[],[],[],[],[],[],[] +,TaCl5,NH3,SLG,,500,,,933,[933],"[""""]","[""Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method""]","[[""L. Hiltunen"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen""]]",[1988],"[""Thin Solid Films""]","[""L. Hiltunen, M. Leskel€a, M. M€akel€a, L. Niinist€o, E. Nyk€anen, and P. Soininen, Thin Solid Films 166, 149 (1988).""]" +,TaCl5,NH3,"SLG, SiLK",300–500,,400–500,,2160 and 2161,"[2160,2161]","["""",""""]","[""Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers"",""Controlled Growth of TaN , Ta _3 N _5 , and TaO _x N _y Thin Films by Atomic Layer Deposition""]","[[""Sugawara, T."",""Oshima, Y."",""Sreenivasan, R."",""McIntyre, P. C.""],[""M. Ritala"",""P. Kalsi"",""D. Riihel a"",""K. Kukli"",""M. Leskela"",""J. Jokinen""]]","[2007,1999]","[""Appl. Phys. Lett."",""Chem. Mater.""]","[""T. Sugawara, Y. Oshima, R. Sreenivasan, and P. C. McIntyre, Appl. Phys. Lett. 90, 112912 (2007)."",""M. Ritala, P. Kalsi, D. Riihel€a, K. Kukli, M. Leskel€a, and J. Jokinen, Chem. Mater. 11, 1712 (1999).""]" +,TaCl5,NH3-Zn,SLG,,400–500,,,2160,[2160],"[""""]","[""Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers""]","[[""Sugawara, T."",""Oshima, Y."",""Sreenivasan, R."",""McIntyre, P. C.""]]",[2007],"[""Appl. Phys. Lett.""]","[""T. Sugawara, Y. Oshima, R. Sreenivasan, and P. C. McIntyre, Appl. Phys. Lett. 90, 112912 (2007).""]" +,TaCl5,DMHy,SLG,300–400,,,,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +,TaCl5,tBuNH2,SLG,350,400–500,,,2163,[2163],"[""""]","[""Effects of surface chemistry on ALD Ta3N5 barrier formation on low-k dielectrics""]","[[""Liu, J."",""Bao, J."",""Scharnberg, M."",""Kim, W. C."",""Ho, P. S."",""Laxman, R.""]]",[2005],"[""J. Vac. Sci. Technol., A""]","[""J. Liu, J. Bao, M. Scharnberg, W. C. Kim, P. S. Ho, and R. Laxman, J. Vac. Sci. Technol. A 23, 1107 (2005).""]" +,TaCl5,tBuNH2+NH3,SLG,,400–500,,,2163,[2163],"[""""]","[""Effects of surface chemistry on ALD Ta3N5 barrier formation on low-k dielectrics""]","[[""Liu, J."",""Bao, J."",""Scharnberg, M."",""Kim, W. C."",""Ho, P. S."",""Laxman, R.""]]",[2005],"[""J. Vac. Sci. Technol., A""]","[""J. Liu, J. Bao, M. Scharnberg, W. C. Kim, P. S. Ho, and R. Laxman, J. Vac. Sci. Technol. A 23, 1107 (2005).""]" +,TaCl5,H2+N2⚡,"H-Si, SiO2",,100–400,,,2164 and 2166,"[2164,2166]","["""",""""]","[""Tert-butylamine and allylamine as reductive nitrogen sources in atomic layer deposition of TaN thin films"",""Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition""]","[[""P. Al en"",""M. Juppo"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""H. Kim"",""C. Cabral, Jr."",""C. Lavoie"",""S. M. Rossnagel""]]","[2002,2002]","[""J. Mater. Res."",""J. Vac. Sci. Technol., B""]","[""P. Al\u0003en, M. Juppo, M. Ritala, M. Leskel€a, T. Sajavaara, and J. Keinonen, J. Mater. Res. 17, 107 (2002)."",""H. Kim, J. C. Cabral, C. Lavoie, and S. M. Rossnagel, J. Vac. Sci. Technol. B 20, 1321 (2002).""]" +,TaCl5·SEt2,NH3 - AlMe3,Si,,400–500,,,2169,[2169],"[""10.1149/1.3267881""]","[""Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper""]","[[""Chang, Chih-Chieh"",""Pan, Fu-Ming"",""Chen, Ching-Wen""]]",[2010],"[""J. Electrochem. Soc.""]","[""C.-C. Chang, F.-M. Pan, and C.-W. Chen, J. Electrochem. Soc. 157, G62 (2010).""]" +,TaBr5,tBuNH2,SLG,400,450–500,,,2163,[2163],"[""""]","[""Effects of surface chemistry on ALD Ta3N5 barrier formation on low-k dielectrics""]","[[""Liu, J."",""Bao, J."",""Scharnberg, M."",""Kim, W. C."",""Ho, P. S."",""Laxman, R.""]]",[2005],"[""J. Vac. Sci. Technol., A""]","[""J. Liu, J. Bao, M. Scharnberg, W. C. Kim, P. S. Ho, and R. Laxman, J. Vac. Sci. Technol. A 23, 1107 (2005).""]" +,TaBr5,tBuNH2+NH3,SLG,,400–500,,,2163,[2163],"[""""]","[""Effects of surface chemistry on ALD Ta3N5 barrier formation on low-k dielectrics""]","[[""Liu, J."",""Bao, J."",""Scharnberg, M."",""Kim, W. C."",""Ho, P. S."",""Laxman, R.""]]",[2005],"[""J. Vac. Sci. Technol., A""]","[""J. Liu, J. Bao, M. Scharnberg, W. C. Kim, P. S. Ho, and R. Laxman, J. Vac. Sci. Technol. A 23, 1107 (2005).""]" +,TaF5,H2+N2⚡,SiO2,,350,350,,2170,[2170],"[""10.1149/1.3353230""]","[""Atomic Layer Deposition of Ta-N-Based Thin Films Using a Tantalum Source""]","[[""Schmidt, D."",""Knaut, M."",""Hossbach, C."",""Albert, M."",""Dussarrat, C."",""Hintze, B."",""Bartha, J. W.""]]",[2010],"[""J. Electrochem. Soc.""]","[""D. Schmidt, M. Knaut, C. Hossbach, M. Albert, C. Dussarrat, B. Hintze, and J. W. Bartha, J. Electrochem. Soc. 157, H638 (2010).""]" +,TaF5,H2⚡-NH3,SiO2,,200–350,,,2125–2127,"[2125,2126,2127]","["""","""",""10.1149/1.3223989""]","[""Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties"",""A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films"",""Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier""]","[[""H. Kim"",""S. M. Rossnagel""],[""Kwon, J. D."",""Park, J. S."",""Lee, H. C."",""Kang, S. W.""],[""Kwon, Jung-Dae"",""Jeong, Seong-Jun"",""Kang, Jae-Wook"",""Kim, Do-Geun"",""Kim, Jong-Kuk"",""Rha, Jong-Joo"",""Nam, Kee-Seok"",""Kwon, Se-Hun""]]","[2003,2006,2009]","[""Thin Solid Films"",""Electrochem. Solid-State Lett."",""J. Electrochem. Soc.""]","[""H. Kim and S. M. Rossnagel, Thin Solid Films 441, 311 (2003)."",""J. D. Kwon, J. S. Park, H. C. Lee, and S. W. Kang, Electrochem. Solid- State Lett. 9, G282 (2006)."",""J.-D. Kwon, S.-J. Jeong, J.-W. Kang, D.-G. Kim, J.-K. Kim, J.-J. Rha, K.-S. Nam, and S.-H. Kwon, J. Electrochem. Soc. 156, H832 (2009).""]" +,TaF5,H2+NH3⚡,SiO2,,200,200,,2127,[2127],"[""10.1149/1.3223989""]","[""Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier""]","[[""Kwon, Jung-Dae"",""Jeong, Seong-Jun"",""Kang, Jae-Wook"",""Kim, Do-Geun"",""Kim, Jong-Kuk"",""Rha, Jong-Joo"",""Nam, Kee-Seok"",""Kwon, Se-Hun""]]",[2009],"[""J. Electrochem. Soc.""]","[""J.-D. Kwon, S.-J. Jeong, J.-W. Kang, D.-G. Kim, J.-K. Kim, J.-J. Rha, K.-S. Nam, and S.-H. Kwon, J. Electrochem. Soc. 156, H832 (2009).""]" +,Ta(NMe2)5,H2⚡,"H-Si, SiO2, Si",,150–250,,,"964, 2152, 2182, and 2183","[964,2152,2182,2183]","[""10.1149/1.2988651"","""",""10.1016/j.mee.2008.05.026"",""""]","[""Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications"",""Tantalum(V) nitride inverse opals as photonic structures for visible wavelengths"",""Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma"",""Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition""]","[[""Knoops, H. C. M."",""Baggetto, L."",""Langereis, E."",""van de Sanden, M. C. M."",""Klootwijk, J. H."",""Roozeboom, F."",""Niessen, R. A. H."",""Notten, P. H. L."",""Kessels, W. M. M.""],[""Rugge, A."",""Park, J. S."",""Gordon, R. G."",""Tolbert, S. H.""],[""Xie, Qi"",""Musschoot, Jan"",""Detavernier, Christophe"",""Deduytsche, Davy"",""Van Meirhaeghe, Roland L."",""Van den Berghe, Sven"",""Jiang, Yu-Long"",""Ru, Guo-Ping"",""Li, Bing-Zong"",""Qu, Xin-Ping""],[""Kim, H."",""Detavenier, C."",""van der Straten, O."",""Rossnagel, S. M."",""Kellock, A. J."",""Park, D. G.""]]","[2008,2005,2008,2005]","[""J. Electrochem. Soc."",""J. Phys. Chem. B"",""Microelectron. Eng."",""J. Appl. Phys.""]","[""H. C. M. Knoops, L. Baggetto, E. Langereis, M. C. M. van de Sanden, J. H. Klootwijk, F. Roozeboom, R. A. H. Niessen, P. H. L. Notten, and W. M. M. Kessels, J. Electrochem. Soc. 155, G287 (2008)."",""A. Rugge, J. S. Park, R. G. Gordon, and S. H. Tolbert, J. Phys. Chem. B 109, 3764 (2005)."",""Q. Xie, J. Musschoot, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, S. Van den Berghe, Y.-L. Jiang, G.-P. Ru, B.-Z. Li, and X.-P. Qu, Microelectron. Eng. 85, 2059 (2008)."",""H. Kim, C. Detavenier, O. van der Straten, S. M. Rossnagel, A. J. Kellock, and D. G. Park, J. Appl. Phys. 98, 014308 (2005).""]" +,Ta(NMe2)5,N2+H2⚡,"H-Si, SiO2",250,,150–250,,2182 and 2183,"[2182,2183]","[""10.1016/j.mee.2008.05.026"",""""]","[""Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma"",""Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition""]","[[""Xie, Qi"",""Musschoot, Jan"",""Detavernier, Christophe"",""Deduytsche, Davy"",""Van Meirhaeghe, Roland L."",""Van den Berghe, Sven"",""Jiang, Yu-Long"",""Ru, Guo-Ping"",""Li, Bing-Zong"",""Qu, Xin-Ping""],[""Kim, H."",""Detavenier, C."",""van der Straten, O."",""Rossnagel, S. M."",""Kellock, A. J."",""Park, D. G.""]]","[2008,2005]","[""Microelectron. Eng."",""J. Appl. Phys.""]","[""Q. Xie, J. Musschoot, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, S. Van den Berghe, Y.-L. Jiang, G.-P. Ru, B.-Z. Li, and X.-P. Qu, Microelectron. Eng. 85, 2059 (2008)."",""H. Kim, C. Detavenier, O. van der Straten, S. M. Rossnagel, A. J. Kellock, and D. G. Park, J. Appl. Phys. 98, 014308 (2005).""]" +,Ta(NEtMe)5,NH3,"H-Si, SiO2",220–250,250,,,2184,[2184],"[""""]","[""Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition""]","[[""Langereis, E."",""Knoops, H. C. M."",""Mackus, A. J. M."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2007],"[""J. Appl. Phys.""]","[""E. Langereis, H. C. M. Knoops, A. J. M. Mackus, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 102, 083517 (2007).""]" +,Ta(iPrN)(NEtMe)3,N2+H2⚡,SiO2,400,,,,2185,[2185],"[""""]","[""Thermal and electrical properties of 5-nm-thick TaN film prepared by atomic layer deposition using a pentakis(ethylmethylamino)tantalum precursor for copper metallization""]","[[""Bae, N. J."",""Na, K. I."",""Cho, H. I."",""Park, K. Y."",""Boo, E."",""Bae, J. H."",""Lee, J. H.""]]",[2006],"[""Jpn. J. Appl. Phys.""]","[""N. J. Bae, K. I. Na, H. I. Cho, K. Y. Park, E. Boo, J. H. Bae, and J. H. Lee, Jpn. J. Appl. Phys., Part 1 45, 9072 (2006).""]" +,Ta(tBuN)(NEt2)3,NH3,"SiO2, Si",150–260,350–400,,,"2187, 2188, 2192, and 2198","[2187,2188,2192,2198]","["""","""","""",""10.1149/1.3490413""]","[""Barrier characteristics of TaN films deposited by using the remote plasma enhanced atomic layer deposition method"",""Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes"",""Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent"",""Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas""]","[[""J. Y. Kim"",""K. W. Lee"",""H. O. Park"",""Y. D. Kim"",""H. Jeon"",""Y. Kim""],[""O. van der Straten"",""Y. Zhu"",""K. Dunn"",""E. T. Eisenbraun"",""A. E. Kaloyeros""],[""J.-S. Park"",""M.-J. Lee"",""C.-S. Lee"",""S.-W. Kang""],[""Cho, Gi-Hee"",""Rhee, Shi-Woo""]]","[2004,2004,2001,2010]","[""J. Korean Phys. Soc."",""J. Mater. Res."",""Electrochem. Solid-State Lett."",""Electrochem. Solid-State Lett.""]","[""J. Y. Kim, K. W. Lee, H. O. Park, Y. D. Kim, H. Jeon, and Y. Kim, J. Korean Phys. Soc. 45, 1069 (2004)."",""O. van der Straten, Y. Zhu, K. Dunn, E. T. Eisenbraun, and A. E. Kaloyeros, J. Mater. Res. 19, 447 (2004)."",""J.-S. Park, M.-J. Lee, C.-S. Lee, and S.-W. Kang, Electrochem. Solid- State Lett. 4, C17 (2001)."",""G.-H. Cho and S.-W. Rhee, Electrochem. Solid-State Lett. 13, H426 (2010).""]" +,Ta(tBuN)(NEt2)3,N2H4,Si,150–250,,,,2188,[2188],"[""""]","[""Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes""]","[[""O. van der Straten"",""Y. Zhu"",""K. Dunn"",""E. T. Eisenbraun"",""A. E. Kaloyeros""]]",[2004],"[""J. Mater. Res.""]","[""O. van der Straten, Y. Zhu, K. Dunn, E. T. Eisenbraun, and A. E. Kaloyeros, J. Mater. Res. 19, 447 (2004).""]" +,Ta(tBuN)(NEt2)3,H2⚡,"SiO2, Si",250–350,250–350,,,"1669, 2191, 2192, and 2195","[1669,2191,2192,2195]","[""10.1016/j.tsf.2009.01.117"",""DOI: 10.1016/j.tsf.2010.07.115"","""",""10.1149/1.3377003""]","[""Interface roughness effect between gate oxide and metal gate on dielectric property"",""Atomic layer deposition of tantalum nitride based thin films from cyclopentadienyl type precursor"",""Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent"",""Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum""]","[[""Son, J. Y."",""Maeng, W. J."",""Kim, Woo-Hee"",""Shin, Y. H."",""Kim, Hyungjun""],[""A. Correia Anacleto"",""A. Zauner"",""D. Cany-Canian"",""J. Gatineau"",""M.-C. Hugon""],[""J.-S. Park"",""M.-J. Lee"",""C.-S. Lee"",""S.-W. Kang""],[""Kim, Suk-Hoon"",""Song, Moon-Kyun"",""Rhee, Shi-Woo""]]","[2009,2010,2001,2010]","[""Thin Solid Films"",""Thin Solid Films"",""Electrochem. Solid-State Lett."",""J. Electrochem. Soc.""]","[""J. Y. Son, W. J. Maeng, W.-H. Kim, Y. H. Shin, and H. Kim, Thin Solid Films 517, 3892 (2009)."",""A. C. Anacleto, A. Zauner, D. Cany-Canian, J. Gatineau, and M.-C. Hugon, Thin Solid Films 519, 367 (2010)."",""J.-S. Park, M.-J. Lee, C.-S. Lee, and S.-W. Kang, Electrochem. Solid- State Lett. 4, C17 (2001)."",""S.-H. Kim, M.-K. Song, and S.-W. Rhee, J. Electrochem. Soc. 157, H652 (2010).""]" +,Ta(tBuN)(NEt2)3,NH3⚡,SiO2,250,350–400,,,2198,[2198],"[""10.1149/1.3490413""]","[""Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas""]","[[""Cho, Gi-Hee"",""Rhee, Shi-Woo""]]",[2010],"[""Electrochem. Solid-State Lett.""]","[""G.-H. Cho and S.-W. Rhee, Electrochem. Solid-State Lett. 13, H426 (2010).""]" +,Ta(tAmN)(NMe2)3,H2⚡,SiO2,,230,,,1671,[1671],"[""10.1016/j.mee.2009.11.163""]","[""Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition""]","[[""Choi, Bum Ho"",""Lim, Yong Hwan"",""Lee, Jong Ho"",""Kim, Young Baek"",""Lee, Ho-Nyun"",""Lee, Hong Kee""]]",[2010],"[""Microelectron. Eng.""]","[""B. H. Choi, Y. H. Lim, J. H. Lee, Y. B. Kim, H.-N. Lee, and H. K. Lee, Microelectron. Eng. 87, 1391 (2010).""]" +WNx,,,,Amorphous,Cubic W2N,Hexagonal WN,,,[],[],[],[],[],[],[] +,WF6,NH3,Si,,327,,,2224,[2224],"[""""]","[""Atomic layer deposition of tungsten(III) oxide thin films from W-2(NMe2)(6) and water: Precursor-based control of oxidation state in the thin film material""]","[[""Dezelah IV, C. L."",""El-Kadri, O. M."",""Szil agyi, I. M."",""Campbell, J. M."",""Arstila, K."",""Niinist o, L."",""Winter, C. H.""]]",[2006],"[""J. Am. Chem. Soc.""]","[""C. L. Dezelah IV, O. M. El-Kadri, I. M. Szil\u0003agyi, J. M. Campbell, K. Arstila, L. Niinist€o, and C. H. Winter, J. Am. Chem. Soc. 128, 9638 (2006).""]" +,WF6,"NH3(ethene, silane cat.)",Si,,350,350,,2225,[2225],"[""""]","[""Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions""]","[[""J. W. Klaus"",""S. J. Ferro"",""S. M. George""]]",[2000],"[""J. Electrochem. Soc.""]","[""J. W. Klaus, S. J. Ferro, and S. M. George, J. Electrochem. Soc. 147, 1175 (2000).""]" +,WF6,NH3,SiO2,,350,,,944,[944],"[""""]","[""Diffusion barrier deposition on a copper surface by atomic layer deposition""]","[[""K.-E. Elers"",""V. Saanila"",""P. J. Soininen"",""J. T. Kostamo"",""S. Haukka"",""J. Juhanoja"",""W. F. A. Besling""]]",[2002],"[""Chem. Vap. Deposition""]","[""K.-E. Elers, V. Saanila, P. J. Soininen, J. T. Kostamo, S. Haukka, J. Juhanoja, and W. F. A. Besling, Chem. Vap. Deposition 8, 149 (2002).""]" +,WF6,NH3+B2H6,SiO2,300,300,300,,2356,[2356],"[""""]","[""""]",[[]],[null],"[""""]","[""S. H. Kim, J. K. Kim, N. Kwak, H. Sohn, J. Kim, S. H. Jung, M. R. Hong, S. H. Lee, and J. Collins, Electrochem. Solid-State Lett. 9, C54 (2006).""]" +,WF6,NH3+B2H6,SiO2,,200–350,200–350,,2230,[2230],"[""""]","[""A new atomic layer deposition of W-N thin films""]","[[""H. S. Sim"",""J. H. Park"",""Y. T. Kim""]]",[2004],"[""Phys. Status Solidi A""]","[""H. S. Sim, J. H. Park, and Y. T. Kim, Phys. Status Solidi A 201, R92 (2004).""]" +,W(tBuN)2(NMe2)2,NH3,"Si, SiO2, Ni, Cr",250–380,,,,"1067, 1689, and 2231","[1067,1689,2231]","["""","""",""""]","[""Nucleation and adhesion of ALD copper on cobalt adhesion layers and tungsten nitride diffusion barriers"",""Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)(2) Precursor and Oxygen Gas"",""Characteristics of ALD tungsten nitride using B2H6, WF6, and NH3 and application to contact barrier layer for DRAM""]","[[""Li, Z. W."",""Gordon, R. G."",""Farmer, D. B."",""Lin, Y. B."",""Vlassak, J.""],[""Kim, Woo-Hee"",""Park, Sang-Joon"",""Kim, Do Young"",""Kim, Hyungjun""],[""Kim, S. H."",""Kim, J. K."",""Lee, J. H."",""Kwak, N."",""Kim, J."",""Jung, S. H."",""Hong, M. R."",""Lee, S. H."",""Collins, J."",""Sohn, H.""]]","[2005,2009,2007]","[""Electrochem. Solid-State Lett."",""J. Korean Phys. Soc."",""J. Electrochem. Soc.""]","[""Z. W. Li, R. G. Gordon, D. B. Farmer, Y. B. Lin, and J. Vlassak, Electrochem. Solid-State Lett. 8, G182 (2005)."",""W.-H. Kim, S.-J. Park, D. Y. Kim, and H. Kim, J. Korean Phys. Soc. 55, 32 (2009)."",""S. H. Kim, J. K. Kim, J. H. Lee, N. Kwak, J. Kim, S. H. Jung, M. R. Hong, S. H. Lee, J. Collins, and H. Sohn, J. Electrochem. Soc. 154, D435 (2007).""]" +,W2(NMe2)6,NH3,Si,180–210,,,,2235,[2235],"[""""]","[""Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current""]","[[""Kim, K. H."",""Farmer, D. B."",""Lehn, J. S. M."",""Rao, P. V."",""Gordon, R. G.""]]",[2006],"[""Appl. Phys. Lett.""]","[""K. H. Kim, D. B. Farmer, J. S. M. Lehn, P. V. Rao, and R. G. Gordon, Appl. Phys. Lett. 89, 133512 (2006).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_051_table_036/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_051_table_036/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..b0737c265ab1fed57bf2cacc4ed785c151af868b --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_051_table_036/gold.csv @@ -0,0 +1,53 @@ +ALD,,Film type,GPC,N:Ti,"Impurities, at-%",,,,Density,Ref.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,°C,,nm,,C,H,O,Cl (I),gcm-3,,[],[],[],[],[],[],[] +Halide reactants,,,,,,,,,,,[],[],[],[],[],[],[] +Thermal ALD,,,,,,,,,,,[],[],[],[],[],[],[] +TiCl4–NH3,,,,,,,,,,,[],[],[],[],[],[],[] +,300,Cryst.,0.03,–,–,–,–,7.7,–,955,[955],"[""""]","[""Properties of TiN films grown by atomic-layer chemical vapor deposition with a modified gaseous-pulse sequence""]","[[""Cheng, H. E."",""Lee, W. J.""]]",[2006],"[""Mater. Chem. Phys.""]","[""H. E. Cheng and W. J. Lee, Mater. Chem. Phys. 97, 315 (2006).""]" +,350,Cryst.,0.04,0.9,~0,–,~0,2.5,4.2,938,[938],"[""10.1116/1.582391""]","[""Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method""]","[[""Hyeongtag Jeon"",""June-Woo Lee"",""Young-Do Kim"",""Deok-Soo Kim"",""Kyoung-Soo Yi""]]",[2000],"[""J. Vac. Sci. Technol., A""]","[""H. Jeon, J.-W. Lee, Y.-D. Kim, D.-S. Kim, and K.-S. Yi, J. Vac. Sci. Technol. A 18, 1595 (2000).""]" +,400,Cryst.,0.017,–,–,–,< d.l.,1.2,–,944,[944],"[""""]","[""Diffusion barrier deposition on a copper surface by atomic layer deposition""]","[[""K.-E. Elers"",""V. Saanila"",""P. J. Soininen"",""J. T. Kostamo"",""S. Haukka"",""J. Juhanoja"",""W. F. A. Besling""]]",[2002],"[""Chem. Vap. Deposition""]","[""K.-E. Elers, V. Saanila, P. J. Soininen, J. T. Kostamo, S. Haukka, J. Juhanoja, and W. F. A. Besling, Chem. Vap. Deposition 8, 149 (2002).""]" +,400,Cryst.,0.017,1.16,~0,–,~0,1.2,~5.4,950,[950],"[""""]","[""TiCl4 as a precursor in the TiN deposition by ALD and PEALD""]","[[""Elers, K. E."",""Winkler, J."",""Weeks, K."",""Marcus, S.""]]",[2005],"[""J. Electrochem. Soc.""]","[""K. E. Elers, J. Winkler, K. Weeks, and S. Marcus, J. Electrochem. Soc. 152, G589 (2005).""]" +,400,Cryst.,0.04,0.9,~0,–,~0,0.5,4.7,938,[938],"[""10.1116/1.582391""]","[""Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method""]","[[""Hyeongtag Jeon"",""June-Woo Lee"",""Young-Do Kim"",""Deok-Soo Kim"",""Kyoung-Soo Yi""]]",[2000],"[""J. Vac. Sci. Technol., A""]","[""H. Jeon, J.-W. Lee, Y.-D. Kim, D.-S. Kim, and K.-S. Yi, J. Vac. Sci. Technol. A 18, 1595 (2000).""]" +,450,Cryst.,0.03,–,–,–,–,1.8,–,955,[955],"[""""]","[""Properties of TiN films grown by atomic-layer chemical vapor deposition with a modified gaseous-pulse sequence""]","[[""Cheng, H. E."",""Lee, W. J.""]]",[2006],"[""Mater. Chem. Phys.""]","[""H. E. Cheng and W. J. Lee, Mater. Chem. Phys. 97, 315 (2006).""]" +,450,Cryst.,0.04,0.9,~0,–,~0,0.3,4.9,938,[938],"[""10.1116/1.582391""]","[""Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method""]","[[""Hyeongtag Jeon"",""June-Woo Lee"",""Young-Do Kim"",""Deok-Soo Kim"",""Kyoung-Soo Yi""]]",[2000],"[""J. Vac. Sci. Technol., A""]","[""H. Jeon, J.-W. Lee, Y.-D. Kim, D.-S. Kim, and K.-S. Yi, J. Vac. Sci. Technol. A 18, 1595 (2000).""]" +,500,Cryst.,0.02,–,–,<0.4,–,<0.5,–,934,[934],"[""""]","[""Atomic layer epitaxy growth of TiN thin films""]","[[""M. Ritala"",""M. Leskel a"",""E. Rauhala"",""P. Haussalo""]]",[1995],"[""J. Electrochem. Soc.""]","[""M. Ritala, M. Leskel€a, E. Rauhala, and P. Haussalo, J. Electrochem. Soc. 142, 2731 (1995).""]" +,500,Cryst.,0.02,0.9,~0,–,~15,<0.05,–,935,[935],"[""""]","[""Effects of intermediate zinc pulses on properties of TiN and NbN films deposited by atomic layer epitaxy""]","[[""M. Ritala"",""T. Asikainen"",""M. Leskel a"",""J. Jokinen"",""R. Lappalainen"",""M. Utriainen"",""L. Niinist o"",""E. Ristolainen""]]",[1997],"[""Appl. Surf. Sci.""]","[""M. Ritala, T. Asikainen, M. Leskel€a, J. Jokinen, R. Lappalainen, M. Utriainen, L. Niinist€o, and E. Ristolainen, Appl. Surf. Sci. 120, 199 (1997).""]" +,500,Cryst.,0.03,–,–,–,–,1.0,–,955,[955],"[""""]","[""Properties of TiN films grown by atomic-layer chemical vapor deposition with a modified gaseous-pulse sequence""]","[[""Cheng, H. E."",""Lee, W. J.""]]",[2006],"[""Mater. Chem. Phys.""]","[""H. E. Cheng and W. J. Lee, Mater. Chem. Phys. 97, 315 (2006).""]" +TiI4–NH3,,,,,,,,,,,[],[],[],[],[],[],[] +,400,Cryst.,0.012,0.5,–,–,~30,<0.5 (I),–,968,[968],"[""""]","[""Atomic layer epitaxy growth of TiN thin films from TiI _4 and NH _3""]","[[""M. Ritala"",""M. Leskel a"",""E. Rauhala"",""J. Jokinen""]]",[1998],"[""J. Electrochem. Soc.""]","[""M. Ritala, M. Leskel€a, E. Rauhala, and J. Jokinen, J. Electrochem. Soc. 145, 2914 (1998).""]" +,500,Cryst.,0.03,0.8,–,–,~10,<0.5 (I),–,968,[968],"[""""]","[""Atomic layer epitaxy growth of TiN thin films from TiI _4 and NH _3""]","[[""M. Ritala"",""M. Leskel a"",""E. Rauhala"",""J. Jokinen""]]",[1998],"[""J. Electrochem. Soc.""]","[""M. Ritala, M. Leskel€a, E. Rauhala, and J. Jokinen, J. Electrochem. Soc. 145, 2914 (1998).""]" +TiCl4–allylNH2,,,,,,,,,,,[],[],[],[],[],[],[] +,400,Amorph.,0.015,0.7,9,≳ 3,≳ 13,7,–,967,[967],"[""""]","[""Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources""]","[[""M. Juppo"",""P. Al en"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2002],"[""Electrochem. Solid-State Lett.""]","[""M. Juppo, P. Al\u0003en, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskel€a, Electrochem. Solid-State Lett. 5, C4 (2002).""]" +TiCl4–DMHy,,,,,,,,,,,[],[],[],[],[],[],[] +,250,Amorph.,0.022,–,–,–,–,18,–,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +,300,W. cryst.,0.022,–,6,2,–,7,–,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +,400,W. cryst.,0.026,1.0,13,2,14,2,–,966,[966],"[""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[2000],"[""J. Electrochem. Soc.""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 147, 3377 (2000).""]" +Plasma ALD,,,,,,,,,,,[],[],[],[],[],[],[] +"TiCl4–N, H plasma",,,,,,,,,,,[],[],[],[],[],[],[] +,100,Cryst.,0.026,1.1,–,16,2.6,2.1,3.9,960,[960],"[""""]","[""Low-temperature deposition of TiN by plasma-assisted atomic layer deposition""]","[[""Heil, S. B. S."",""Langereis, E."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2006],"[""J. Electrochem. Soc.""]","[""S. B. S. Heil, E. Langereis, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. 153, G956 (2006).""]" +,200,Cryst.,0.027,1.0,–,–,1.4,0.96,–,960,[960],"[""""]","[""Low-temperature deposition of TiN by plasma-assisted atomic layer deposition""]","[[""Heil, S. B. S."",""Langereis, E."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2006],"[""J. Electrochem. Soc.""]","[""S. B. S. Heil, E. Langereis, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. 153, G956 (2006).""]" +,300,Cryst.,0.036,1.1,–,–,2.8,0.42,–,960,[960],"[""""]","[""Low-temperature deposition of TiN by plasma-assisted atomic layer deposition""]","[[""Heil, S. B. S."",""Langereis, E."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2006],"[""J. Electrochem. Soc.""]","[""S. B. S. Heil, E. Langereis, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. 153, G956 (2006).""]" +,320,Cryst.,0.030,1,~0,–,~0,~1.0,4.9,950,[950],"[""""]","[""TiCl4 as a precursor in the TiN deposition by ALD and PEALD""]","[[""Elers, K. E."",""Winkler, J."",""Weeks, K."",""Marcus, S.""]]",[2005],"[""J. Electrochem. Soc.""]","[""K. E. Elers, J. Winkler, K. Weeks, and S. Marcus, J. Electrochem. Soc. 152, G589 (2005).""]" +,400,Cryst.,0.050,1.0,–,3,1.8,0.07,4.8,960,[960],"[""""]","[""Low-temperature deposition of TiN by plasma-assisted atomic layer deposition""]","[[""Heil, S. B. S."",""Langereis, E."",""Roozeboom, F."",""van de Sanden, M. C. M."",""Kessels, W. M. M.""]]",[2006],"[""J. Electrochem. Soc.""]","[""S. B. S. Heil, E. Langereis, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. 153, G956 (2006).""]" +Alkylamide reactants,,,,,,,,,,,[],[],[],[],[],[],[] +Thermal ALD,,,,,,,,,,,[],[],[],[],[],[],[] +Ti(NMe2)4–NH3,,,,,,,,,,,[],[],[],[],[],[],[] +,150,Amorph.,0.3,1.0,21,–,20,–,–,975,[975],"[""""]","[""Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH _3""]","[[""H. K. Kim"",""J. Y. Kim"",""J. Y. Park"",""Y. Kim"",""Y. D. Kim"",""H. Jeon"",""W. M. Kim""]]",[2002],"[""J. Korean Phys. Soc.""]","[""H. K. Kim, J. Y. Kim, J. Y. Park, Y. Kim, Y. D. Kim, H. Jeon, and W. M. Kim, J. Korean Phys. Soc. 41, 739 (2002).""]" +,180,Amorph.,0.2,–,10,–,20,–,–,973,[973],"[""""]","[""Effect of post-treatments on atomic layer deposition of TiN thin films using tetrakis(dimethylamido)titanium and ammonia""]","[[""J. H. Yun"",""E. S. Choi"",""C. M. Jang"",""C. S. Lee""]]",[2002],"[""Jpn. J. Appl. Phys., Part 2""]","[""J. H. Yun, E. S. Choi, C. M. Jang, and C. S. Lee, Jpn. J. Appl. Phys., Part 2 41, L418 (2002).""]" +,180,W. cryst.,0.7,0.9,6,–,37,–,3.1,980,[980],"[""""]","[""Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3""]","[[""Fillot, F."",""Morel, T."",""Minoret, S."",""Matko, I."",""Maitrejean, S."",""Guillaumot, B."",""Chenevier, B."",""Billon, T.""]]",[2005],"[""Microelectron. Eng.""]","[""F. Fillot, T. Morel, S. Minoret, I. Matko, S. Maitrejean, B. Guillaumot, B. Chenevier, and T. Billon, Microelectron. Eng. 82, 248 (2005).""]" +,200,Amorph.,0.5,1.0,20,–,20,–,–,975,[975],"[""""]","[""Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH _3""]","[[""H. K. Kim"",""J. Y. Kim"",""J. Y. Park"",""Y. Kim"",""Y. D. Kim"",""H. Jeon"",""W. M. Kim""]]",[2002],"[""J. Korean Phys. Soc.""]","[""H. K. Kim, J. Y. Kim, J. Y. Park, Y. Kim, Y. D. Kim, H. Jeon, and W. M. Kim, J. Korean Phys. Soc. 41, 739 (2002).""]" +,200,–,0.06,0.5,9,–,37,–,–,986,[986],"[""10.1016/j.mee.2008.09.036""]","[""Atomic layer deposition of titanium nitride from TDMAT precursor""]","[[""Musschoot, J."",""Xie, Q."",""Deduytsche, D."",""Van den Berghe, S."",""Van Meirhaeghe, R. L."",""Detavernier, C.""]]",[2009],"[""Microelectron. Eng.""]","[""J. Musschoot, Q. Xie, D. Deduytsche, S. Van den Berghe, R. L. Van Meirhaeghe, and C. Detavernier, Microelectron. Eng. 86, 72 (2009).""]" +,240,W. cryst.,1–11,0.8,7,–,37,–,3.0,976,[976],"[""""]","[""Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH _3""]","[[""J. W. Elam"",""M. Schuisky"",""J. D. Ferguson"",""S. M. George""]]",[2003],"[""Thin Solid Films""]","[""J. W. Elam, M. Schuisky, J. D. Ferguson, and S. M. George, Thin Solid Films 436, 145 (2003).""]" +,350,W. cryst.,7.6,1.0,45,–,7,–,–,975,[975],"[""""]","[""Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH _3""]","[[""H. K. Kim"",""J. Y. Kim"",""J. Y. Park"",""Y. Kim"",""Y. D. Kim"",""H. Jeon"",""W. M. Kim""]]",[2002],"[""J. Korean Phys. Soc.""]","[""H. K. Kim, J. Y. Kim, J. Y. Park, Y. Kim, Y. D. Kim, H. Jeon, and W. M. Kim, J. Korean Phys. Soc. 41, 739 (2002).""]" +Ti(NEtMe)4–NH3,,,,,,,,,,,[],[],[],[],[],[],[] +,200,Amorph.,0.5,0.6,4,6,–,–,–,996,[996],"[""""]","[""Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis(ethylmethylamino)-Titanium and Ammonia""]","[[""J.-S. Min"",""Y.-W. Son"",""W.-G. Kang"",""S.-S. Chun"",""S.-W. Kang""]]",[1998],"[""Jpn. J. Appl. Phys., Part 1""]","[""J.-S. Min, Y.-W. Son, W.-G. Kang, S.-S. Chun, and S.-W. Kang, Jpn. J. Appl. Phys., Part 1 37, 4999 (1998).""]" +Plasma ALD,,,,,,,,,,,[],[],[],[],[],[],[] +Ti(NMe2)4–H2 plasma,,,,,,,,,,,[],[],[],[],[],[],[] +,150,Cryst.,0.035,0.7,11,–,0,–,4.1,995,[995],"[""""]","[""Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient""]","[[""Caubet, P."",""Blomberg, T."",""Benaboud, R."",""Wyon, C."",""Blanquet, E."",""Gonchond, J. P."",""Juhel, M."",""Bouvet, P."",""Gros-Jean, M."",""Michailos, J."",""Richard, C."",""Iteprat, B.""]]",[2008],"[""J. Electrochem. Soc.""]","[""P. Caubet, T. Blomberg, R. Benaboud, C. Wyon, E. Blanquet, J. P. Gonchond, M. Juhel, P. Bouvet, M. Gros-Jean, J. Michailos, C. Richard, and B. Iteprat, J. Electrochem. Soc. 155, H625 (2008).""]" +,250,Amorph.,–,1,<5,–,25,–,–,989,[989],"[""""]","[""Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes""]","[[""J. Y. Kim"",""D. Y. Kim"",""H. O. Park"",""H. Jeon""]]",[2005],"[""J. Electrochem. Soc.""]","[""J. Y. Kim, D. Y. Kim, H. O. Park, and H. Jeon, J. Electrochem. Soc. 152, G29 (2005).""]" +Ti(NMe2)4–N2 plasma,,,,,,,,,,,[],[],[],[],[],[],[] +,250,Amorph.,–,1.3,4.5,–,10,–,–,989,[989],"[""""]","[""Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes""]","[[""J. Y. Kim"",""D. Y. Kim"",""H. O. Park"",""H. Jeon""]]",[2005],"[""J. Electrochem. Soc.""]","[""J. Y. Kim, D. Y. Kim, H. O. Park, and H. Jeon, J. Electrochem. Soc. 152, G29 (2005).""]" +Ti(NMe2)4–NH3 plasma,,,,,,,,,,,[],[],[],[],[],[],[] +,200,–,0.08,0.9,1,–,5,–,–,986,[986],"[""10.1016/j.mee.2008.09.036""]","[""Atomic layer deposition of titanium nitride from TDMAT precursor""]","[[""Musschoot, J."",""Xie, Q."",""Deduytsche, D."",""Van den Berghe, S."",""Van Meirhaeghe, R. L."",""Detavernier, C.""]]",[2009],"[""Microelectron. Eng.""]","[""J. Musschoot, Q. Xie, D. Deduytsche, S. Van den Berghe, R. L. Van Meirhaeghe, and C. Detavernier, Microelectron. Eng. 86, 72 (2009).""]" +,250,Amorph.,0.2,1.2,<3,–,20,–,–,988,[988],"[""""]","[""Remote plasma-enhanced atomic-layer deposition of TiN by using TDMAT with a NH _3 plasma""]","[[""J. Y. Kim"",""D. Y. Kim"",""H. O. Park"",""H. Jeon""]]",[2004],"[""J. Korean Phys. Soc.""]","[""J. Y. Kim, D. Y. Kim, H. O. Park, and H. Jeon, J. Korean Phys. Soc. 45, 1639 (2004).""]" +,250,Amorph.,–,1.1,1,–,20,–,–,989,[989],"[""""]","[""Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes""]","[[""J. Y. Kim"",""D. Y. Kim"",""H. O. Park"",""H. Jeon""]]",[2005],"[""J. Electrochem. Soc.""]","[""J. Y. Kim, D. Y. Kim, H. O. Park, and H. Jeon, J. Electrochem. Soc. 152, G29 (2005).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_054_table_037/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_054_table_037/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..802c0d14fa5f0c3bbf4047ea671df4377253f83a --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_054_table_037/gold.csv @@ -0,0 +1,34 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +Sulfides,,,,,,,,[],[],[],[],[],[],[] +CaS,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Ca(thd)2,H2S,"SLG, Al2O3",,325–450,,"675, 676, 678, and 679","[675,676,678,679]","["""","""","""",""""]","[""Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor"",""ALKALINE-EARTH SULFIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY"",""THE EFFECT OF GASEOUS SiCl _4 ON THE ALE GROWTH OF CaS , SrS AND SrS -- Ce"",""[Ca(thd) _2 (tetraen)] : A Monomeric Precursor for Deposition of CaS Thin Films""]","[[""Kukli, K."",""Ritala, M."",""Sajavaara, T."",""H anninen, T."",""Leskel a, M.""],[""M. Tammenmaa"",""H. Antson"",""M. Asplund"",""L. Hiltunen"",""M. Leskel a"",""L. Niinist o"",""E. Ristolainen""],[""P. Soininen"",""L. Niinist o"",""E. Nyk anen"",""M. Leskel a""],[""T. H anninen"",""I. Mutikainen"",""V. Saanila"",""M. Ritala"",""M. Leskel a"",""J. C. Hanson""]]","[2006,1987,1994,1997]","[""Thin Solid Films"",""J. Cryst. Growth"",""Appl. Surf. Sci."",""Chem. Mater.""]","[""K. Kukli, M. Ritala, T. Sajavaara, T. H€anninen, and M. Leskel€a, Thin Solid Films 500, 322 (2006)."",""M. Tammenmaa, H. Antson, M. Asplund, L. Hiltunen, M. Leskel€a, L. Niinist€o, and E. Ristolainen, J. Cryst. Growth 84, 151 (1987)."",""P. Soininen, L. Niinist€o, E. Nyk€anen, and M. Leskel€a, Appl. Surf. Sci. 75, 99 (1994)."",""T. H€anninen, I. Mutikainen, V. Saanila, M. Ritala, M. Leskel€a, and J. C. Hanson, Chem. Mater. 9, 1234 (1997).""]" +TiS2,,,,Amorphous,Cubic,Hexagonal,,[],[],[],[],[],[],[] +,TiCl4,H2S,Rh,400,,,999,[999],"[""""]","[""Atomic Layer Deposition of Titanium Disulfide Thin Films""]","[[""V. Pore"",""M. Ritala"",""M. Leskel a""]]",[2007],"[""Chem. Vap. Deposition""]","[""V. Pore, M. Ritala, and M. Leskel€a, Chem. Vap. Deposition 13, 163 (2007).""]" +,TiCl4,H2S,Ru,,400,400,999,[999],"[""""]","[""Atomic Layer Deposition of Titanium Disulfide Thin Films""]","[[""V. Pore"",""M. Ritala"",""M. Leskel a""]]",[2007],"[""Chem. Vap. Deposition""]","[""V. Pore, M. Ritala, and M. Leskel€a, Chem. Vap. Deposition 13, 163 (2007).""]" +,TiCl4,H2S,"SLG, ZnS, Ir, Pd, Pt, TiN",,,400,999,[999],"[""""]","[""Atomic Layer Deposition of Titanium Disulfide Thin Films""]","[[""V. Pore"",""M. Ritala"",""M. Leskel a""]]",[2007],"[""Chem. Vap. Deposition""]","[""V. Pore, M. Ritala, and M. Leskel€a, Chem. Vap. Deposition 13, 163 (2007).""]" +CuSx,,,,Amorphous,Pseudocubic,Hexagonal,,[],[],[],[],[],[],[] +,Cu(thd)2,H2S,"Si, SLG",,,120–160,1144,[1144],"[""""]","[""Growth of conductive copper sulfide thin films by atomic layer deposition""]","[[""J. Johansson"",""J. Kostamo"",""M. Karppinen"",""L. Niinist o""]]",[2002],"[""J. Mater. Chem.""]","[""J. Johansson, J. Kostamo, M. Karppinen, and L. Niinist€o, J. Mater. Chem. 12, 1022 (2002).""]" +,Cu(thd)2,H2S,"Corning 7059, SnO2:F, TiO2",,175–280,125–175,1145 and 1146,"[1145,1146]","["""",""""]","[""Atomic Layer Deposition of Cu _x S for Solar Energy Conversion"",""Comparison of CuxS films grown by atomic layer deposition and chemical vapor deposition""]","[[""L. Reijnen"",""B. Meester"",""A. Goossens"",""J. Schoonman""],[""Reijnen, L."",""Meester, B."",""de Lange, F."",""Schoonman, J."",""Goossens, A.""]]","[2003,2005]","[""Chem. Vap. Deposition"",""Chem. Mater.""]","[""L. Reijnen, B. Meester, A. Goossens, and J. Schoonman, Chem. Vap. Deposition 9, 15 (2003)."",""L. Reijnen, B. Meester, F. de Lange, J. Schoonman, and A. Goossens, Chem. Mater. 17, 2724 (2005).""]" +,Cu(sBuAMD)2,H2S,Al2O3,130,,130,1147,[1147],"[""10.1063/1.3094131""]","[""Atomic layer deposition of Cu2S for future application in photovoltaics""]","[[""Martinson, Alex B. F."",""Elam, Jeffrey W."",""Pellin, Michael J.""]]",[2009],"[""Appl. Phys. Lett.""]","[""A. B. F. Martinson, J. W. Elam, and M. J. Pellin, Appl. Phys. Lett. 94, 123107 (2009).""]" +ZnS,,,,Amorphous,Cubic,Hexagonal,,[],[],[],[],[],[],[] +,Zn,S,GaAse,,140–340,,1288,[1288],"[""""]","[""Self-limiting monolayer epitaxy of wide gap II -- VI superlattices""]","[[""W. Faschinger"",""P. Juza"",""S. Ferreira"",""H. Zajicek"",""A. Pesek"",""H. Sitter"",""K. Lischka""]]",[1993],"[""Thin Solid Films""]","[""W. Faschinger, P. Juza, S. Ferreira, H. Zajicek, A. Pesek, H. Sitter, and K. Lischka, Thin Solid Films 225, 270 (1993).""]" +,Zn,H2S,GaPe,,420–600,,1289,[1289],"[""""]","[""Atomic layer epitaxy growth of ZnS on (100) GaAs using molecular beam epitaxy system""]","[[""T. Tadokoro"",""S. Ohta"",""T. Ishiguro"",""Y. Ichinose"",""S. Kobayashi"",""N. Yamamoto""]]",[1995],"[""J. Cryst. Growth""]","[""T. Tadokoro, S. Ohta, T. Ishiguro, Y. Ichinose, S. Kobayashi, and N. Yamamoto, J. Cryst. Growth 148, 223 (1995).""]" +,ZnCl2,H2S,GaAse,,510,,1300 and 1301,"[1300,1301]","["""",""""]","[""ALE growth of ZnS _ 1-x Se _x thin films by substituting surface sulfur with elemental selenium"",""STRUCTURE, SURFACE MORPHOLOGY AND OPTICAL PROPERTIES OF THIN FILMS OF ZnS AND CdS GROWN BY ATOMIC LAYER EPITAXY""]","[[""J. Ihanus"",""M. Ritala"",""M. Leskel a"",""E. Rauhala""],[""A. Szczerbakow"",""M. Godlewski"",""E. Dynowska"",""V. . Ivanov"",""K. Swi atek"",""E. M. Goldys"",""M. R. Phillips""]]","[1997,1998]","[""Appl. Surf. Sci."",""Acta Phys. Pol. A""]","[""J. Ihanus, M. Ritala, M. Leskel€a, and E. Rauhala, Appl. Surf. Sci. 112, 154 (1997)."",""A. Szczerbakow, M. Godlewski, E. Dynowska, V. Yu. Ivanov, K. \u0003Swia˛tek, E. M. Goldys, and M. R. Phillips, Acta Phys. Pol. A 97, 579 (1998).""]" +,ZnCl2,H2S,"glass, SLG, phlogopite, ITO, silica, Al2O3",,,390–500,"84, 1290–1292, 1295, 1297–1299, 1302, 1304, and 2134","[84,1290,1291,1292,1295,1297,1298,1299,1302,1304,2134]","["""","""","""","""","""","""","""","""","""","""",""""]","[""Introducing atomic layer epitaxy for the deposition of optical thin films"",""ATMOSPHERIC-PRESSURE ATOMIC LAYER EPITAXY OF ZnS USING Zn AND H _2 S"",""Structure of a zinc sulfide film prepared by molecular stratification on the surface of disperse silica"",""CHARACTERIZATION OF SURFACE EXCHANGE-REACTIONS USED TO GROW COMPOUND FILMS"",""Mass spectrometry study of ZnS atomic layer epitaxy process"",""DENSITY OF ZnS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY"",""EMANATION THERMAL-ANALYSIS IN THE CHARACTERIZATION OF ZINC-SULFIDE THIN-FILMS PREPARED FROM DIFFERENT PRECURSORS"",""AFM studies on ZnS thin films grown by atomic layer epitaxy"",""Monocrystalline ZnS -sphalerite films grown by atomic layer epitaxy in a gas flow system"",""High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition"",""Influence of atomic layer deposition parameters on the phase content of Ta _2 O _5 films""]","[[""D. Riihela"",""M. Ritala"",""R. Matero"",""M. Leskela""],[""A. Koukitu"",""T. Miyazawa"",""H. Ikeda"",""H. Seki""],[""N. A. Stepanova"",""V. D. Kupriyanov"",""A. A. Malygin""],[""M. Pessa"",""R. M akel a"",""T. Suntola""],[""J. Hyv arinen"",""M. Sonninen"",""R. T ornqvist""],[""M. Oikkonen"",""T. Tuomi"",""M. Luomaj arvi""],[""V. Balek"",""J. Fusek"",""O. K r i z"",""M. Leskel a"",""L. Niinist o"",""E. Nyk anen"",""J. Rautanen"",""P. Soininen""],[""J. Ihanus"",""M. Ritala"",""M. Leskel a"",""T. Prohaska"",""R. Resch"",""G. Friedbacher"",""M. Grasserbauer""],[""A. Szczerbakow"",""E. Dynowska"",""M. Godlewski"",""K. Swi atek""],[""J. S. King"",""C. W. Neff"",""C. J. Summers"",""W. Park"",""S. Blomquist"",""E. Forsythe"",""D. Morton""],[""K. Kukli"",""M. Ritala"",""R. Matero"",""M. Leskel a""]]","[1996,1992,1987,1981,1988,1988,1994,1997,1998,2003,2000]","[""Thin Solid Films"",""J. Cryst. Growth"",""Neorg. Mater."",""Appl. Phys. Lett."",""J. Cryst. Growth"",""J. Appl. Phys."",""J. Mater. Res."",""Appl. Surf. Sci."",""J. Cryst. Growth"",""Appl. Phys. Lett."",""J. Cryst. Growth""]","[""D. Riihel€a, M. Ritala, R. Matero, and M. Leskel€a, Thin Solid Films 289, 250 (1996)."",""A. Koukitu, T. Miyazawa, H. Ikeda, and H. Seki, J. Cryst. Growth 123, 95 (1992)."",""N. A. Stepanova, V. D. Kupriyanov, and A. A. Malygin, Neorg. Mater. 23, 377 (1987) [Inorg. Mater. 23, 331 (1987)]."",""M. Pessa, R. M€akel€a, and T. Suntola, Appl. Phys. Lett. 38, 131 (1981)."",""J. Hyv€arinen, M. Sonninen, and R. T€ornqvist, J. Cryst. Growth 86, 695 (1988)."",""M. Oikkonen, T. Tuomi, and M. Luomaj€arvi, J. Appl. Phys. 63, 1070 (1988)."",""V. Balek, J. Fusek, O. K\u0004r\u0003ı\u0004z, M. Leskel€a, L. Niinist€o, E. Nyk€anen, J. Rautanen, and P. Soininen, J. Mater. Res. 9, 119 (1994)."",""J. Ihanus, M. Ritala, M. Leskel€a, T. Prohaska, R. Resch, G. Friedbacher, and M. Grasserbauer, Appl. Surf. Sci. 120, 43 (1997)."",""A. Szczerbakow, E. Dynowska, M. Godlewski, and K. \u0003Swia˛tek, J. Cryst. Growth 183, 708 (1998)."",""J. S. King, C. W. Neff, C. J. Summers, W. Park, S. Blomquist, E. Forsythe, and D. Morton, Appl. Phys. Lett. 83, 2566 (2003)."",""K. Kukli, M. Ritala, R. Matero, and M. Leskel€a, J. Cryst. Growth 212, 459 (2000).""]" +,ZnCl2,H2S,Al2O3,,360–500,360–400,1304,[1304],"[""""]","[""High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition""]","[[""J. S. King"",""C. W. Neff"",""C. J. Summers"",""W. Park"",""S. Blomquist"",""E. Forsythe"",""D. Morton""]]",[2003],"[""Appl. Phys. Lett.""]","[""J. S. King, C. W. Neff, C. J. Summers, W. Park, S. Blomquist, E. Forsythe, and D. Morton, Appl. Phys. Lett. 83, 2566 (2003).""]" +,ZnI2,H2S,Al2O3,,300–490,300–490,1305,[1305],"[""""]","[""Aging of electroluminescent devices based on ZnS deposited with atomic layer epitaxy from various precursors""]","[[""Soenen, B"",""Ihanus, J."",""Stuyven, G."",""De Visschere, P."",""Ritala, M."",""Leskela, M.""]]",[2000],"[""Journal of the SID, Suppl. 1""]","[""B. Soenen, J. Ihanus, G. Stuyven, P. De Visschere, M. Ritala, and M. Leskel€a, SID Int. Symp. Digest Tech. Papers Suppl. 1, 33 (2000).""]" +,ZnMe2,H2S,GaAse,,150–310,,1308 and 1311,"[1308,1311]","["""",""""]","[""COVERAGE OF ROUGH SUBSTRATES BY ZnS USING VACUUM EVAPORATION AND ATOMIC LAYER EPITAXY"",""Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)- Si Substrate""]","[[""M. D. Bhise"",""B. Sanders"",""N. Dalacu"",""A. H. Kitai""],[""C. H. Liu"",""M. Yokoyama"",""Y. K. Su""]]","[1989,1996]","[""J. Mater. Sci."",""Jpn. J. Appl. Phys., Part 1""]","[""M. D. Bhise, B. Sanders, N. Dalacu, and A. H. Kitai, J. Mater. Sci. 24, 3164 (1989)."",""C. H. Liu, M. Yokoyama, and Y. K. Su, Jpn. J. Appl. Phys., Part 1 35, 5416 (1996).""]" +,ZnMe2,H2S,H-Sie,,125–175,,1313 and 1314,"[1313,1314]","["""",""""]","[""Growth of ZnSe/ZnS strained-layer superlattice on Si substrates by atomic layer epitaxy"",""Epitaxial growth of II--VI compound semiconductors by atomic layer epitaxy""]","[[""C.-T. Hsu"",""M. Yokoyama"",""Y. K. Su""],[""C. T. Hsu""]]","[1997,1998]","[""Mater. Chem. Phys."",""Thin Solid Films""]","[""C.-T. Hsu, M. Yokoyama, and Y. K. Su, Mater. Chem. Phys. 51, 102 (1997)."",""C. T. Hsu, Thin Solid Films 335, 284 (1998).""]" +,ZnMe2,H2S,"Si, Corning 7059",,25–500,25–500,1306,[1306],"[""""]","[""Aging of electroluminescent ZnS : Mn thin films deposited by atomic layer deposition processes""]","[[""Ihanus, J."",""Lankinen, M. P."",""Kemell, M."",""Ritala, M."",""Leskel a, M.""]]",[2005],"[""J. Appl. Phys.""]","[""J. Ihanus, M. P. Lankinen, M. Kemell, M. Ritala, and M. Leskel€a, J. Appl. Phys. 98, 113526 (2005).""]" +,ZnMe2,H2S,Corning 7059,,200–340,,1309,[1309],"[""""]","[""Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy""]","[[""Y.-H. Wu"",""T. Toyoda"",""Y. Kawakami"",""S. Fujita"",""S. Fujita""]]",[1990],"[""Jpn. J. Appl. Phys., Part 2""]","[""Y.-H. Wu, T. Toyoda, Y. Kawakami, S. Fujita, and S. Fujita, Jpn. J. Appl. Phys., Part 2 29, L727 (1990).""]" +,ZnEt2,H2S,glass,,120,120,1194,[1194],"[""""]","[""Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se-2 based thin film solar cells: Band alignment and sulfur gradient""]","[[""Platzer-Bj orkman, C."",""T orndahl, T."",""Abou-Ras, D."",""Malmstr om, J."",""Kessler, J."",""Stolt, L.""]]",[2006],"[""J. Appl. Phys.""]","[""C. Platzer-Bj€orkman, T. T€orndahl, D. Abou-Ras, J. Malmstr€om, J. Kessler, and L. Stolt, J. Appl. Phys. 100, 044506 (2006).""]" +,ZnEt2,H2S,"AlxTiyOz, Al2O3",,250–400,350–400,1317 and 1318,"[1317,1318]","["""",""""]","[""Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide"",""Studies on polycrystalline ZnS thin films grown by atomic layer deposition for electroluminescent applications""]","[[""G. Stuyven"",""P. De Visschere"",""A. Hikavyy"",""K. Neyts""],[""Y. S. Kim"",""S. J. Yun""]]","[2002,2004]","[""J. Cryst. Growth"",""Appl. Surf. Sci.""]","[""G. Stuyven, P. De Visschere, A. Hikavyy, and K. Neyts, J. Cryst. Growth 234, 690 (2002)."",""Y. S. Kim and S. J. Yun, Appl. Surf. Sci. 229, 105 (2004).""]" +,ZnEt2,H2S,H-Si,,,110,1215,[1215],"[""""]","[""Characteristics of Zinc-Oxide-Sulfide-Mixed Films Deposited by Using Atomic Layer Deposition""]","[[""Jeon, Sunyeol"",""Bang, Seokhwan"",""Lee, Seungjun"",""Kwon, Semyung"",""Jeong, Wooho"",""Jeon, Hyeongtag"",""Chang, Ho Jung"",""Park, Hyung-Ho""]]",[2008],"[""J. Korean Phys. Soc.""]","[""S. Jeon, S. Bang, S. Lee, S. Kwon, W. Jeong, H. Jeon, H. J. Chang, and H.-H. Park, J. Korean Phys. Soc. 53, 3287 (2008).""]" +,ZnEt2,H2S,Si,,100–400,300–400,1320,[1320],"[""10.1088/0957-4484/20/32/325602""]","[""Atomic layer deposition of ZnS nanotubes""]","[[""Farhangfar, Sh"",""Yang, R. B."",""Pelletier, M."",""Nielsch, K.""]]",[2009],"[""Nanotechnology""]","[""S. Farhangfar, R. B. Yang, M. Pelletier, and K. Nielsch, Nanotechnology 20, 325602 (2009).""]" +,Zn(CH3COO)2,H2S,"SLG, ITO",,290–390,,"1292, 1295, and 1297","[1292,1295,1297]","["""","""",""""]","[""CHARACTERIZATION OF SURFACE EXCHANGE-REACTIONS USED TO GROW COMPOUND FILMS"",""Mass spectrometry study of ZnS atomic layer epitaxy process"",""DENSITY OF ZnS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY""]","[[""M. Pessa"",""R. M akel a"",""T. Suntola""],[""J. Hyv arinen"",""M. Sonninen"",""R. T ornqvist""],[""M. Oikkonen"",""T. Tuomi"",""M. Luomaj arvi""]]","[1981,1988,1988]","[""Appl. Phys. Lett."",""J. Cryst. Growth"",""J. Appl. Phys.""]","[""M. Pessa, R. M€akel€a, and T. Suntola, Appl. Phys. Lett. 38, 131 (1981)."",""J. Hyv€arinen, M. Sonninen, and R. T€ornqvist, J. Cryst. Growth 86, 695 (1988)."",""M. Oikkonen, T. Tuomi, and M. Luomaj€arvi, J. Appl. Phys. 63, 1070 (1988).""]" +,Zn(CH3COO)2,H2S,"SLG, Al2O3",,290–360,290–360,"1279, 1304, and 1322","[1279,1304,1322]","["""","""",""""]","[""Zinc chalcogenide thin films grown by the atomic layer epitaxy technique using zinc acetate as source material"",""High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition"",""Carrier transport properties of iodine-doped (ZnS) _3 (ZnSe) _42 ordered alloys grown by atomic layer epitaxy""]","[[""M. Tammenmaa"",""T. Koskinen"",""L. Hiltunen"",""L. Niinist o"",""M. Leskel a""],[""J. S. King"",""C. W. Neff"",""C. J. Summers"",""W. Park"",""S. Blomquist"",""E. Forsythe"",""D. Morton""],[""H. Fujiwara"",""H. Kiryu"",""I. Shimizu""]]","[1985,2003,1995]","[""Thin Solid Films"",""Appl. Phys. Lett."",""J. Appl. Phys.""]","[""M. Tammenmaa, T. Koskinen, L. Hiltunen, L. Niinist€o, and M. Leskel€a, Thin Solid Films 124, 125 (1985)."",""J. S. King, C. W. Neff, C. J. Summers, W. Park, S. Blomquist, E. Forsythe, and D. Morton, Appl. Phys. Lett. 83, 2566 (2003)."",""H. Fujiwara, H. Kiryu, and I. Shimizu, J. Appl. Phys. 77, 3927 (1995).""]" +,Zn(OAc)2,H2S,Al2O3,,250–350,250–350,1304,[1304],"[""""]","[""High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition""]","[[""J. S. King"",""C. W. Neff"",""C. J. Summers"",""W. Park"",""S. Blomquist"",""E. Forsythe"",""D. Morton""]]",[2003],"[""Appl. Phys. Lett.""]","[""J. S. King, C. W. Neff, C. J. Summers, W. Park, S. Blomquist, E. Forsythe, and D. Morton, Appl. Phys. Lett. 83, 2566 (2003).""]" +SrS,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Sr(iPr3Cp)2,H2S,Al2O3,,260–400,,1509,[1509],"[""""]","[""Effect of annealing in processing of strontium titanate thin films by ALD""]","[[""A. Kosola"",""M. Putkonen"",""L.-S. Johansson"",""L. Niinist o""]]",[2003],"[""Appl. Surf. Sci.""]","[""A. Kosola, M. Putkonen, L.-S. Johansson, and L. Niinist€o, Appl. Surf. Sci. 211, 102 (2003).""]" +,Sr(Me5Cp)2,H2S,Al2O3,,280–350,,1509,[1509],"[""""]","[""Effect of annealing in processing of strontium titanate thin films by ALD""]","[[""A. Kosola"",""M. Putkonen"",""L.-S. Johansson"",""L. Niinist o""]]",[2003],"[""Appl. Surf. Sci.""]","[""A. Kosola, M. Putkonen, L.-S. Johansson, and L. Niinist€o, Appl. Surf. Sci. 211, 102 (2003).""]" +,Sr(thd)2,H2S,"Al2O3, SLG",,350–450,,675 and 1512,"[675,1512]","["""",""""]","[""Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor"",""In situ study of a strontium eta -diketonate precursor for thin-film growth by atomic layer epitaxy""]","[[""Kukli, K."",""Ritala, M."",""Sajavaara, T."",""H anninen, T."",""Leskel a, M.""],[""J. Aarik"",""A. Aidla"",""A. Jaek"",""M. Leskel a"",""L. Niinist o""]]","[2006,1994]","[""Thin Solid Films"",""J. Mater. Chem.""]","[""K. Kukli, M. Ritala, T. Sajavaara, T. H€anninen, and M. Leskel€a, Thin Solid Films 500, 322 (2006)."",""J. Aarik, A. Aidla, A. Jaek, M. Leskel€a, and L. Niinist€o, J. Mater. Chem. 4, 1239 (1994).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_055_table_038/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_055_table_038/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..919aa3bf1f1715b2d67ed9b4c3898cdf1e50b00b --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_055_table_038/gold.csv @@ -0,0 +1,35 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +CdS,,,,Amorphous,Cubic,Hexagonal,,[],[],[],[],[],[],[] +,Cd,S,GaAse,,340,,1707,[1707],"[""""]","[""Liquid injection atomic layer deposition of silver nanoparticles""]","[[""P R Chalker"",""S Romani"",""P A Marshall"",""M J Rosseinsky"",""S Rushworth"",""P A Williams""]]",[2010],"[""Nanotechnology""]","[""P. R. Chalker, S. Romani, P. A. Marshall, M. J. Rosseinsky, S. Rushworth, and P. A. Williams, Nanotechnology 21, 405602 (2010).""]" +,CdCl2,H2S,GaAse,,510,,1300,[1300],"[""""]","[""ALE growth of ZnS _ 1-x Se _x thin films by substituting surface sulfur with elemental selenium""]","[[""J. Ihanus"",""M. Ritala"",""M. Leskel a"",""E. Rauhala""]]",[1997],"[""Appl. Surf. Sci.""]","[""J. Ihanus, M. Ritala, M. Leskel€a, and E. Rauhala, Appl. Surf. Sci. 112, 154 (1997).""]" +,CdCl2,H2S,ZnS,,510,,1300,[1300],"[""""]","[""ALE growth of ZnS _ 1-x Se _x thin films by substituting surface sulfur with elemental selenium""]","[[""J. Ihanus"",""M. Ritala"",""M. Leskel a"",""E. Rauhala""]]",[1997],"[""Appl. Surf. Sci.""]","[""J. Ihanus, M. Ritala, M. Leskel€a, and E. Rauhala, Appl. Surf. Sci. 112, 154 (1997).""]" +,CdMe2,H2S,ZnSee,,RT,,"1709, 1710, and 1713","[1709,1710,1713]","["""","""",""""]","[""Atomic-layer epitaxy of cadmium chalcogenides on gallium arsenide"",""Low-temperature, chemically driven atomic-layer epitaxy: In situ monitored growth of CdS/ZnSe (100)"",""An investigation of the surface reaction mechanisms of alternating-grown, ordered atomic layers: CdS on ZnSe (100)""]","[["". K. Ezhovskii"",""A. I. Klyuikov""],[""Y. Luo"",""D. Slater"",""M. Han"",""J. Moryl"",""Osgood, Jr., R. M.""],[""M. Han"",""Y. Luo"",""J. E. Moryl"",""Osgood, Jr., R. M.""]]","[2000,1997,1999]","[""Zr. Prikl. Khim."",""Appl. Phys. Lett."",""Surf. Sci.""]","[""Yu. K. Ezhovskii and A. I. Klyuikov, Zh. Prikl. Khim. 73, 881 (2000) [Russ. J. Appl. Chem. 73, 933 (2000)]."",""Y. Luo, D. Slater, M. Han, J. Moryl, and R. M. Osgood, Jr., Appl. Phys. Lett. 71, 3799 (1997)."",""M. Han, Y. Luo, J. E. Moryl, and R. M. Osgood, Jr., Surf. Sci. 425, 259 (1999).""]" +,CdMe2,H2S,"Si, glass",,100–400,100–400,1714,[1714],"[""""]","[""Studies of heteroepitaxial growth of thin II�-VI semiconductor layers by sequential ultrahigh vacuum dosing""]","[[""Y. Luo"",""M. Han"",""D. A. Slater"",""Osgood, Jr., R. M.""]]",[2000],"[""J. Vac. Sci. Technol., A""]","[""Y. Luo, M. Han, D. A. Slater, and R. M. Osgood, Jr., J. Vac. Sci. Technol. A 18, 438 (2000).""]" +In2S3,,,,Amorphous,Tetragonal,,,[],[],[],[],[],[],[] +,InCl3,H2S,SLG,,300–400,,1763,[1763],"[""""]","[""Phonon structure of InN grown by atomic layer epitaxy""]","[[""T. Inushima"",""T. Shiraishi"",""V. . Davydov""]]",[1989],"[""Solid State Commun.""]","[""T. Inushima, T. Shiraishi, and V. Yu. Davydov, Solid State Commun. 110, 491 (1989).""]" +,In(acac)3,H2S,ZnO,160,,,1178,[1178],"[""""]","[""Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se _2 thin-film solar cells""]","[[""E. B. Yousfi"",""B. Weinberger"",""F. Donsanti"",""P. Cowache"",""D. Lincot""]]",[2001],"[""Thin Solid Films""]","[""E. B. Yousfi, B. Weinberger, F. Donsanti, P. Cowache, and D. Lincot, Thin Solid Films 387, 29 (2001).""]" +,In(acac)3,H2S,glass,,130–160,,"1766, 1767, and 1772","[1766,1767,1772]","["""","""",""""]","[""Indium-Based Interface Chemical Engineering by Electrochemistry and Atomic Layer Deposition for Copper Indium Diselenide Solar Cells"",""High-efficiency copper indium gallium diselenide ( CIGS ) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition ( ALCVD )"",""Microstructural and chemical studies of interfaces between Cu(In,Ga)Se-2 and In2S3 layers""]","[[""J.-F. Guillemoles"",""B. Canava"",""E. B. Yousfi"",""P. Cowache"",""A. Galtayries"",""T. Asikainen"",""M. Powalla"",""D. Hariskos"",""H.-W. Schock"",""D. Lincot""],[""N. Naghavi"",""S. Spiering"",""M. Powalla"",""B. Cavana"",""D. Lincot""],[""Abou-Ras, D."",""Rudmann, D."",""Kostorz, G."",""Spiering, S."",""Powalla, M."",""Tiwari, A. N.""]]","[2001,2003,2005]","[""Jpn. J. Appl. Phys., Part 1"",""Prog. Photovolt."",""J. Appl. Phys.""]","[""J.-F. Guillemoles, B. Canava, E. B. Yousfi, P. Cowache, A. Galtayries, T. Asikainen, M. Powalla, D. Hariskos, H.-W. Schock, and D. Lincot, Jpn. J. Appl. Phys., Part 1 40, 6065 (2001)."",""N. Naghavi, S. Spiering, M. Powalla, B. Cavana, and D. Lincot, Prog. Photovoltaics 11, 437 (2003)."",""D. Abou-Ras, D. Rudmann, G. Kostorz, S. Spiering, M. Powalla, and A. N. Tiwari, J. Appl. Phys. 97, 084908 (2005).""]" +,In(acac)3,H2S,"Si, Cu(In,Ga)Se2, SLG, Corning 7059",,140–260,,"1768, 1769, and 1771","[1768,1769,1771]","["""","""",""""]","[""CD -free Cu(In,Ga)Se _2 thin-film solar modules with In _2 S _3 buffer layer by ALCVD"",""Growth studies and characterisation of In _2 S _3 thin films deposited by atomic layer deposition ( ALD )"",""Stability behaviour of Cd-free Cu(In,Ga)Se-2 solar modules with In2S3 buffer layer prepared by atomic layer deposition""]","[[""S. Spiering"",""D. Hariskos"",""M. Powalla"",""N. Naghavi"",""D. Lincot""],[""N. Naghavi"",""R. Henriquez"",""V. Laptev"",""D. Lincot""],[""Spiering, S."",""Hariskos, D."",""Schr oder, S."",""Powalla, M.""]]","[2003,2004,2005]","[""Thin Solid Films"",""App. Surf. Sci."",""Thin Solid Films""]","[""S. Spiering, D. Hariskos, M. Powalla, N. Naghavi, and D. Lincot, Thin Solid Films 431/432, 359 (2003)."",""N. Naghavi, R. Henriquez, V. Laptev, and D. Lincot, Appl. Surf. Sci. 222, 65 (2004)."",""S. Spiering, D. Hariskos, S. Schr€oder, and M. Powalla, Thin Solid Films 480, 195 (2005).""]" +Sb2S3,,,,Amorphous,Orthorhombic,,,[],[],[],[],[],[],[] +,Sb(NMe2)3,H2S,Si,120,,,1829,[1829],"[""10.1021/cm1011108""]","[""Low Temperature Atomic Layer Deposition of Tin Oxide""]","[[""Heo, Jaeyeong"",""Hock, Adam S."",""Gordon, Roy G.""]]",[2010],"[""Chem. Mater.""]","[""J. Heo, A. S. Hock, and R. G. Gordon, Chem. Mater. 22, 4964 (2010).""]" +,Sb(NMe2)3,H2S,Sb2S3e,,65–160,,2366,[2366],"[""""]","[""""]",[[]],[null],"[""""]","[""R. B. Yang, N. Zakharov, O. Moutanabbir, K. Scheerschmidt, L.-M. Wu, U. G€osele, J. Bachmann, and K. Nielsch, J. Am. Chem. Soc. 132, 7592 (2010).""]" +,Sb(NMe2)3,H2S,Sb2Se3e,,90–160,,2366,[2366],"[""""]","[""""]",[[]],[null],"[""""]","[""R. B. Yang, N. Zakharov, O. Moutanabbir, K. Scheerschmidt, L.-M. Wu, U. G€osele, J. Bachmann, and K. Nielsch, J. Am. Chem. Soc. 132, 7592 (2010).""]" +BaS,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Ba(Me5Cp)2,H2S,Al2O3,,240–300,,1509,[1509],"[""""]","[""Effect of annealing in processing of strontium titanate thin films by ALD""]","[[""A. Kosola"",""M. Putkonen"",""L.-S. Johansson"",""L. Niinist o""]]",[2003],"[""Appl. Surf. Sci.""]","[""A. Kosola, M. Putkonen, L.-S. Johansson, and L. Niinist€o, Appl. Surf. Sci. 211, 102 (2003).""]" +,Ba(thd)2,H2S,"Al2O3, SLG",,300–450,,675 and 1831,"[675,1831]","["""",""""]","[""Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor"",""Atomic layer deposition of BaTiO3 thin films - Effect of barium hydroxide formation""]","[[""Kukli, K."",""Ritala, M."",""Sajavaara, T."",""H anninen, T."",""Leskel a, M.""],[""Vehkam aki, M."",""Hatanp a a, T."",""Ritala, M."",""Leskel a, M."",""V ayrynen, S."",""Rauhala, E.""]]","[2006,2007]","[""Thin Solid Films"",""Chem. Vap. Deposition""]","[""K. Kukli, M. Ritala, T. Sajavaara, T. H€anninen, and M. Leskel€a, Thin Solid Films 500, 322 (2006)."",""M. Vehkam€aki, T. Hatanp€a€a, M. Ritala, M. Leskel€a, S. V€ayrynen, and E. Rauhala, Chem. Vap. Deposition 13, 239 (2007).""]" +La2S3,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,La(thd)3,H2S,"SLG, Corning 7059",300–400,500,,1857,[1857],"[""10.1149/1.3301665""]","[""The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD""]","[[""Kim, Hyungchul"",""Woo, Sanghyun"",""Lee, Jaesang"",""Kim, Honggyu"",""Kim, Yongchan"",""Lee, Hyerin"",""Jeon, Hyeongtag""]]",[2010],"[""J. Electrochem. Soc.""]","[""H. Kim, S. Woo, J. Lee, H. Kim, Y. Kim, H. Lee, and H. Jeon, J. Electrochem. Soc. 157, H479 (2010).""]" +WS2,,,,Amorphous,Hexagonal,,,[],[],[],[],[],[],[] +,WF6,H2S,ZnS,,300,,2238,[2238],"[""""]","[""Low-temperature plasma-enhanced atomic layer deposition growth of WNxCy from a novel precursor for barrier applications in nanoscale devices""]","[[""Zeng, W. X."",""Wang, X. D."",""Kumar, S."",""Peters, D. W."",""Eisenbraun, E. T.""]]",[2007],"[""J. Mater. Res.""]","[""W. X. Zeng, X. D. Wang, S. Kumar, D. W. Peters, and E. T. Eisenbraun, J. Mater. Res. 22, 703 (2007).""]" +,WF6,H2S(ZnEt2 cat.),ZnS,,300–350,,2239,[2239],"[""""]","[""Atomic layer deposition of tungsten disulphide solid lubricant thin films""]","[[""T. W. Scharf"",""S. V. Prasad"",""T. M. Mayer"",""R. S. Goeke"",""M. T. Dugger""]]",[2004],"[""J. Mater. Res.""]","[""T. W. Scharf, S. V. Prasad, T. M. Mayer, R. S. Goeke, and M. T. Dugger, J. Mater. Res. 19, 3443 (2004).""]" +PbS,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Pb(detc)2,H2S,"glass, Al2O3, BaF2",,300–350,,2277,[2277],"[""""]","[""Exploiting volatile lead compounds as precursors for the atomic layer deposition of lead dioxide thin films""]","[[""Harjuoja, J."",""Putkonen, M."",""Niinist o, L.""]]",[2006],"[""Thin Solid Films""]","[""J. Harjuoja, M. Putkonen, and L. Niinist€o, Thin Solid Films 497, 77 (2006).""]" +,Pb(thd)2,H2S,Si,,160,,2279,[2279],"[""""]","[""Preparation of lead sulfide thin films by the atomic layer epitaxy process""]","[[""M. Leskela"",""L. Niinist o"",""P. Niemel a"",""E. Nyk anen"",""P. Soininen"",""M. Tiitta"",""J. V ah akangas""]]",[1990],"[""Vacuum""]","[""M. Leskel€a, L. Niinist€o, P. Niemel€a, E. Nyk€anen, P. Soininen, M. Tiitta, and J. V€ah€akangas, Vacuum 41, 1457 (1990).""]" +Selenides,,,,,,,,[],[],[],[],[],[],[] +ZnSe,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Zn,Se,GaAs,,200–430,,"1323, 1327, 1331, and 1335–1337","[1323,1327,1331,1335,1336,1337]","["""","""","""","""","""",""""]","[""X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy"",""Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy"",""SELF-LIMITING GROWTH OF ZINC CHALCOGENIDES AND THEIR SUPERLATTICES"",""Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system"",""Structure and composition of the ZnSe (001) surface during atomic-layer epitaxy"",""Atomic layer epitaxy processes of ZnSe on GaAs (001) as observed by beam-rocking reflection high-energy electron diffraction ( RHEED ) and total-reflection-angle X-ray spectroscopy ( TRAXS )""]","[[""M. Oikkonen"",""M. Blomberg"",""T. Tuomi"",""M. Tammenmaa""],[""T. Takeda"",""T. Kurosu"",""M. Lida"",""T. Yao""],[""M. Konagai"",""Y. Takemura"",""K. Yamasaki"",""K. Takahashi""],[""A. Szczerbakow"",""E. Dynowska"",""K. Swi atek"",""M. Godlewski""],[""A. Ohtake"",""T. Hanada"",""T. Yasuda"",""K. Arai"",""T. Yao""],[""A. Ohtake"",""T. Hanada"",""K. Arai"",""T. Komura"",""S. Miwa"",""K. Kimura"",""T. Yasuda"",""C. Jin"",""T. Yao""]]","[1985,1996,1993,1999,1999,1999]","[""Thin Solid Films"",""Surf. Sci."",""Thin Solid Films"",""J. Cryst. Growth"",""Phys. Rev. B"",""J. Cryst. Growth""]","[""M. Oikkonen, M. Blomberg, T. Tuomi, and M. Tammenmaa, Thin Solid Films 124, 317 (1985)."",""T. Takeda, T. Kurosu, M. Lida, and T. Yao, Surf. Sci. 174, 548 (1996)."",""M. Konagai, Y. Takemura, K. Yamasaki, and K. Takahashi, Thin Solid Films 225, 256 (1993)."",""A. Szczerbakow, E. Dynowska, K. \u0003Swia˛tek, and M. Godlewski, J. Cryst. Growth 207, 148 (1999)."",""A. Ohtake, T. Hanada, T. Yasuda, K. Arai, and T. Yao, Phys. Rev. B 60, 8326 (1999)."",""A. Ohtake, T. Hanada, K. Arai, T. Komura, S. Miwa, K. Kimura, T. Yasuda, C. Jin, and T. Yao, J. Cryst. Growth 201/202, 490 (1999).""]" +,Zn,Se,GaAse,,350–410,,1339,[1339],"[""""]","[""Optical characterization of CdTe/ZnSe fractional monolayer, structures grown by atomic layer epitaxy""]","[[""J. Y. Lee"",""J. H. Chang"",""M. Yang"",""H. S. Ahn"",""S. N. Yi"",""K. Goto"",""K. Godo"",""H. Makino"",""M. Cho"",""T. Yao"",""J. S. Song""]]",[2004],"[""Curr. Appl. Phys.""]","[""J. Y. Lee, J. H. Chang, M. Yang, H. S. Ahn, S. N. Yi, K. Goto, K. Godo, H. Makino, M. Cho, T. Yao, and J. S. Song, Curr. Appl. Phys. 4, 611 (2004).""]" +,Zn,Se,ZnTee,,200–400,,"1323, 1325, and 1327","[1323,1325,1327]","["""","""",""""]","[""X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy"",""Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy"",""Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy""]","[[""M. Oikkonen"",""M. Blomberg"",""T. Tuomi"",""M. Tammenmaa""],[""T. Yao"",""T. Takeda"",""R. Watanuki""],[""T. Takeda"",""T. Kurosu"",""M. Lida"",""T. Yao""]]","[1985,1986,1996]","[""Thin Solid Films"",""Appl. Phys. Lett."",""Surf. Sci.""]","[""M. Oikkonen, M. Blomberg, T. Tuomi, and M. Tammenmaa, Thin Solid Films 124, 317 (1985)."",""T. Yao, T. Takeda, and R. Watanuki, Appl. Phys. Lett. 48, 1615 (1986)."",""T. Takeda, T. Kurosu, M. Lida, and T. Yao, Surf. Sci. 174, 548 (1996).""]" +,ZnMe2,H2Se,H-Sie,,125–250,,"1313, 1314, 1352, and 1354","[1313,1314,1352,1354]","["""","""","""",""""]","[""Growth of ZnSe/ZnS strained-layer superlattice on Si substrates by atomic layer epitaxy"",""Epitaxial growth of II--VI compound semiconductors by atomic layer epitaxy"",""Variation with composition of the properties in ZnS _x Se _ 1-x"",""Growth of ZnS _x Se _ 1-x layers on Si substrates by atomic layer epitaxy""]","[[""C.-T. Hsu"",""M. Yokoyama"",""Y. K. Su""],[""C. T. Hsu""],[""C.-T. Hsu""],[""C. T. Hsu""]]","[1997,1998,1998,1999]","[""Mater. Chem. Phys."",""Thin Solid Films"",""J. Cryst. Growth"",""Mater. Chem. Phys.""]","[""C.-T. Hsu, M. Yokoyama, and Y. K. Su, Mater. Chem. Phys. 51, 102 (1997)."",""C. T. Hsu, Thin Solid Films 335, 284 (1998)."",""C.-T. Hsu, J. Cryst. Growth 193, 33 (1998)."",""C. T. Hsu, Mater. Chem. Phys. 58, 6 (1999).""]" +,ZnMe2,H2Se,GaAse,,100–200,,1350 and 1352,"[1350,1352]","["""",""""]","[""High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy"",""Variation with composition of the properties in ZnS _x Se _ 1-x""]","[[""C. D. Lee"",""S. I. Min"",""S. K. Chang""],[""C.-T. Hsu""]]","[1996,1998]","[""J. Cryst. Growth"",""J. Cryst. Growth""]","[""C. D. Lee, S. I. Min, and S. K. Chang, J. Cryst. Growth 159, 108 (1996)."",""C.-T. Hsu, J. Cryst. Growth 193, 33 (1998).""]" +,ZnCl2,H2Se,GaAs,,400–500,,1342–1344,"[1342,1343,1344]","["""","""",""""]","[""ATOMIC LAYER EPITAXY OF ZnSe ON GaAs (100) BY METALORGANIC MOLECULAR-BEAM EPITAXY"",""GROWTH OF ZnSe ON (100) GaAs BY ATOMIC LAYER EPITAXY"",""STRUCTURAL-PROPERTIES OF ZnSe ON GaAs GROWN BY ATOMIC LAYER EPITAXY""]","[[""R. Kimura"",""M. Konagai"",""K. Takahashi""],[""C. D. Lee"",""B. H. Lim"",""C. Lim"",""H. L. Park"",""C. H. Chung"",""S. K. Chang""],[""C. D. Lee"",""B. K. Kim"",""J. W. Kim"",""S. K. Chang"",""S. H. Suh""]]","[1992,1992,1994]","[""J. Cryst. Growth"",""J. Cryst. Growth"",""J. Appl. Phys.""]","[""R. Kimura, M. Konagai, and K. Takahashi, J. Cryst. Growth 116, 283 (1992)."",""C. D. Lee, B. H. Lim, C. Lim, H. L. Park, C. H. Chung, and S. K. Chang, J. Cryst. Growth 117, 148 (1992)."",""C. D. Lee, B. K. Kim, J. W. Kim, S. K. Chang, and S. H. Suh, J. Appl. Phys. 76, 928 (1994).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_056_table_039/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_056_table_039/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..c90503053cd281efceab5eaab7f5dc7a0d27e9f9 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_056_table_039/gold.csv @@ -0,0 +1,25 @@ +,Reactant A,Reactant B,Substrate(s),Phases,,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +CdSe,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Cd,Se,ZnSe,,230–300,,"1715, 1717, 1718, and 1720","[1715,1717,1718,1720]","[""10.1021/cm100874f"","""","""",""""]","[""Atomic Layer Deposition of CdS Films"",""Photoluminescence properties of single CdSe quantum dots in ZnSe obtained by self-organized growth"",""Self-organized CdSe/ZnSe quantum dots on a ZnSe(111)A surface"",""Fabrication of low-dimension CdSe structures by atomic layer epitaxy""]","[[""Bakke, Jonathan R."",""Jung, Hee Joon"",""Tanskanen, Jukka T."",""Sinclair, Robert"",""Bent, Stacey F.""],[""M. Y. Shen"",""T. Goto"",""E. Kurtz"",""Z. Zhu"",""T. Yao""],[""E. Kurtz"",""H. D. Jung"",""T. Hanada"",""Z. Zhu"",""T. Sekiguchi"",""T. Yao""],[""D. P. Mikhaevich"","". K. Ezhovskii""]]","[2010,1998,1998,2003]","[""Chem. Mater."",""J. Phys.: Condens. Matter"",""J. Cryst. Growth"",""Zh. Prikl. Khim.""]","[""J. R. Bakke, H. J. Jung, J. T. Tanskanen, R. Sinclair, and S. F. Bent, Chem. Mater. 22, 4669 (2010)."",""M. Y. Shen, T. Goto, E. Kurtz, Z. Zhu, and T. Yao, J. Phys.: Condens. Matter 10, L171 (1998)."",""E. Kurtz, H. D. Jung, T. Hanada, Z. Zhu, T. Sekiguchi, and T. Yao, J. Cryst. Growth 184/185, 242 (1998)."",""D. P. Mikhaevich and Yu. K. Ezhovskii, Zh. Prikl. Khim. 76, 1238 (2003) [Russ. J. Appl. Chem. 76, 1197 (2003)].""]" +,Cd,Se,GaAse,,350–410,,1722,[1722],"[""""]","[""Growth of CdSe - and CdTe -Based Nanostructures on Silicon""]","[["". K. Ezhovskii"",""D. P. Mikhaevich""]]",[2004],"[""Neorg. Mater.""]","[""Yu. K. Ezhovskii and D. P. Mikhaevich, Neorg. Mater. 40, 1043 (2004) [Inorg. Mater. 40, 909 (2004)].""]" +Tellurides,,,,,,,,[],[],[],[],[],[],[] +MgTe,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Mg,Te,CdTe,,260–300,,69 and 70,"[69,70]","["""",""""]","[""CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters"",""Atomic layer epitaxy of CdTe , MgTe and MnTe growth of CdTe/MnTe tilted superlattices on vicinal surfaces""]","[[""J. M. Hartmann"",""J. Cibert"",""F. Kany"",""H. Mariette"",""M. Charleux"",""P. Alleysson"",""R. Langer"",""G. Feuillet""],[""J. M. Hartmann"",""M. Charleux"",""H. Mariette"",""J. L. Rouvi ere""]]","[1996,1997]","[""J. Appl. Phys."",""Appl. Surf. Sci.""]","[""J. M. Hartmann, J. Cibert, F. Kany, H. Mariette, M. Charleux, P. Alleysson, R. Langer, and G. Feuillet, J. Appl. Phys. 80, 6257 (1996)."",""J. M. Hartmann, M. Charleux, H. Mariette, and J. L. Rouvie`re, Appl. Surf. Sci. 112, 142 (1997).""]" +ZnTe,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Zn,Te,GaAs,,200–400,,"1323, 1327, and 1359","[1323,1327,1359]","["""","""",""""]","[""X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy"",""Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy"",""SELF-LIMITING GROWTH IN ATOMIC LAYER EPITAXY OF ZnTe""]","[[""M. Oikkonen"",""M. Blomberg"",""T. Tuomi"",""M. Tammenmaa""],[""T. Takeda"",""T. Kurosu"",""M. Lida"",""T. Yao""],[""Y. Takemura"",""H. Nakanishi"",""M. Konagai"",""K. Takahashi""]]","[1985,1996,1991]","[""Thin Solid Films"",""Surf. Sci."",""Jpn. J. Appl. Phys.""]","[""M. Oikkonen, M. Blomberg, T. Tuomi, and M. Tammenmaa, Thin Solid Films 124, 317 (1985)."",""T. Takeda, T. Kurosu, M. Lida, and T. Yao, Surf. Sci. 174, 548 (1996)."",""Y. Takemura, H. Nakanishi, M. Konagai, and K. Takahashi, Jpn. J. Appl. Phys., Part 2 30, L246 (1991).""]" +,Zn,Te,GaAse,,380–390,,1363 and 1365,"[1363,1365]","["""",""""]","[""Reflection mass spectrometry studies on UHV ALE of Cd _ 1-x Zn _x Te ( 0 x 1 ) compounds"",""Interaction between Zn and Cd atoms during the atomic layer epitaxy growth of CdZnTe/ZnTe quantum wells""]","[[""J. T. Sadowski"",""M. A. Herman""],[""E. M. Larramendi"",""E. L opez-Luna"",""O. De Melo"",""I. Hern andez-Calder on""]]","[1997,2002]","[""Appl. Surf. Sci."",""Surf. Rev. Lett.""]","[""J. T. Sadowski and M. A. Herman, Appl. Surf. Sci. 112, 148 (1997)."",""E. M. Larramendi, E. L\u0003opez-Luna, O. De Melo, and I. Hern\u0003andez- Calder\u0003on, Surf. Rev. Lett. 9, 1725 (2002).""]" +,Zn,Te,ZnSee,,200–400,,1323 and 1327,"[1323,1327]","["""",""""]","[""X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy"",""Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy""]","[[""M. Oikkonen"",""M. Blomberg"",""T. Tuomi"",""M. Tammenmaa""],[""T. Takeda"",""T. Kurosu"",""M. Lida"",""T. Yao""]]","[1985,1996]","[""Thin Solid Films"",""Surf. Sci.""]","[""M. Oikkonen, M. Blomberg, T. Tuomi, and M. Tammenmaa, Thin Solid Films 124, 317 (1985)."",""T. Takeda, T. Kurosu, M. Lida, and T. Yao, Surf. Sci. 174, 548 (1996).""]" +,Zn,Te,CdTee,,225–250,,1361,[1361],"[""""]","[""GROWTH AND CHARACTERIZATION OF CdTe -- ZnTe SHORT-PERIOD SUPERLATTICES""]","[[""F. Hauzenberger"",""W. Faschinger"",""P. Juza"",""A. Pesek"",""K. Lischka"",""H. Sitter""]]",[1993],"[""Thin Solid Films""]","[""F. Hauzenberger, W. Faschinger, P. Juza, A. Pesek, K. Lischka, and H. Sitter, Thin Solid Films 225, 265 (1993).""]" +,Zn,Te,ZnTee,,280,,1362,[1362],"[""""]","[""Surface stoichiometry determination using reflection high-energy electron diffraction and atomic-layer epitaxy: The case of ZnTe (100)""]","[[""B. Daudin"",""S. Tatarenko"",""D. Brun-Le Cunff""]]",[1995],"[""Phys. Rev. B""]","[""B. Daudin, S. Tatarenko, and D. Brun-Le Cunff, Phys. Rev. B 52, 7822 (1995).""]" +GeTe,,,,Amorphous,Rhombohedral,,,[],[],[],[],[],[],[] +,GeCl2 · C4H8O2,(Et3Si)2Te,Si,,90,,1148,[1148],"[""10.1021/ja8090388""]","[""Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium""]","[[""Pore, Viljami"",""Hatanp a a, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2009],"[""J. Am. Chem. Soc.""]","[""V. Pore, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, J. Am. Chem. Soc. 131, 3478 (2009).""]" +CdTe,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,Cd,Te,"CdTee,BaF2e, GaAse",,260–290,,"70, 1043, 1046, 1723, 1724, 1726, 1730, and 1731","[70,1043,1046,1723,1724,1726,1730,1731]","["""","""","""",""10.1016/j.jcrysgro.2010.03.002"","""","""","""",""""]","[""Atomic layer epitaxy of CdTe , MgTe and MnTe growth of CdTe/MnTe tilted superlattices on vicinal surfaces"",""GROWTH OF Cd _ 1-X Mn _X Te FILMS WITH 0 < x < 0.9 BY ATOMIC LAYER EPITAXY"",""Atomic layer epitaxy of CdTe and MnTe"",""On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium"",""ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CdTe -FILMS GROWN ON CdTe (110) SUBSTRATES"",""Atomic layer epitaxy of CdTe on the polar (111)A and (111)B surfaces of CdTe substrates"",""GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .3. REEVAPORATION OF Cd AND Te FROM CdTe (111) SURFACES AND THICK ELEMENTAL DEPOSITS MONITORED BY QUADRUPOLE-MASS SPECTROMETRY"",""Atomic-layer epitaxy of (111) CdTe on BaF _2 substrates""]","[[""J. M. Hartmann"",""M. Charleux"",""H. Mariette"",""J. L. Rouvi ere""],[""M. Pessa"",""O. Jylh a""],[""J. M. Hartmann"",""G. Feuillet"",""M. Charleux"",""H. Mariette""],[""Larramendi, Erick M."",""Gutierrez Z-B, Karla"",""de Melo, Osvaldo"",""Woggon, Ulrike"",""Schikora, Detlef"",""Lischka, Klaus""],[""M. Pessa"",""P. Huttunen"",""M. A. Herman""],[""M. Pessa"",""O. Jylh a"",""M. A. Herman""],[""M. A. Herman"",""P. Juza"",""W. Faschinger"",""H. Sitter""],[""W. Faschinger"",""H. Sitter"",""P. Juza""]]","[1997,1984,1996,2010,1983,1984,1988,1988]","[""Appl. Surf. Sci."",""Appl. Phys. Lett."",""J. Appl. Phys."",""J. Cryst. Growth"",""J. Appl. Phys."",""J. Cryst. Growth"",""Cryst. Res. Technol."",""Appl. Phys. Lett.""]","[""J. M. Hartmann, M. Charleux, H. Mariette, and J. L. Rouvie`re, Appl. Surf. Sci. 112, 142 (1997)."",""M. Pessa and O. Jylh€a, Appl. Phys. Lett. 45, 646 (1984)."",""J. M. Hartmann, G. Feuillet, M. Charleux, and H. Mariette, J. Appl. Phys. 79, 3035 (1996)."",""E. M. Larramendi, Z. B. K. Gutierrez, O. de Melo, U. Woggon, D. Schikora, and K. Lischka, J. Cryst. Growth 312, 1807 (2010)."",""M. Pessa, P. Huttunen, and M. A. Herman, J. Appl. Phys. 54, 6047 (1983)."",""M. Pessa, O. Jylh€a, and M. A. Herman, J. Cryst. Growth 67, 255 (1984)."",""M. A. Herman, P. Juza, W. Faschinger, and H. Sitter, Cryst. Res. Technol. 23, 307 (1988)."",""W. Faschinger, H. Sitter, and P. Juza, Appl. Phys. Lett. 53, 2519 (1988).""]" +,Cd,Te,ZnSe,,230–300,,1720,[1720],"[""""]","[""Fabrication of low-dimension CdSe structures by atomic layer epitaxy""]","[[""D. P. Mikhaevich"","". K. Ezhovskii""]]",[2003],"[""Zh. Prikl. Khim.""]","[""D. P. Mikhaevich and Yu. K. Ezhovskii, Zh. Prikl. Khim. 76, 1238 (2003) [Russ. J. Appl. Chem. 76, 1197 (2003)].""]" +,CdMe2,TeEt2,"GaAse, Si",,250–320,,1367 and 1749,"[1367,1749]","["""",""""]","[""Atomic layer deposition of multilayer ZnTe/CdTe nanostructures"",""LOW-TEMPERATURE EPITAXY OF HgTe , CdTe , AND HgCdTe USING FLOW MODULATION TECHNIQUES""]","[[""Ezhovskii, Y. K."",""Pavlov, D. V.""],[""I. Bhat"",""H. Ehsani"",""W. S. Wang"",""S. K. Ghandhi"",""N. H. Karam""]]","[2007,1992]","[""Inorg. Mater."",""J. Vac. Sci. Technol., B""]","[""Y. K. Ezhovskii and D. V. Pavlov, Inorg. Mater. 43, 692 (2007)."",""I. Bhat, H. Ehsani, W. S. Wang, S. K. Ghandhi, and N. H. Karam, J. Vac. Sci. Technol. B 10, 1376 (1992).""]" +,CdMe2,TeMe(allyl),"GaAse, Si",,250–320,,1367 and 1748–1750,"[1367,1748,1749,1750]","["""","""","""",""""]","[""Atomic layer deposition of multilayer ZnTe/CdTe nanostructures"",""Dimensional structural transition in CdTe/Cd _x Zn _ 1�x Te nanostructures"",""LOW-TEMPERATURE EPITAXY OF HgTe , CdTe , AND HgCdTe USING FLOW MODULATION TECHNIQUES"",""ATOMIC LAYER EPITAXY OF CdTe ON GaAs , BY ORGANOMETALLIC VAPOR-PHASE EPITAXY""]","[[""Ezhovskii, Y. K."",""Pavlov, D. V.""],[""H. S. Lee"",""H. L. Park"",""T. W. Kim""],[""I. Bhat"",""H. Ehsani"",""W. S. Wang"",""S. K. Ghandhi"",""N. H. Karam""],[""W.-S. Wang"",""H. E. Ehsani"",""I. B. Bhat""]]","[2007,2004,1992,1992]","[""Inorg. Mater."",""Appl. Phys. Lett."",""J. Vac. Sci. Technol., B"",""J. Cryst. Growth""]","[""Y. K. Ezhovskii and D. V. Pavlov, Inorg. Mater. 43, 692 (2007)."",""H. S. Lee, H. L. Park, and T. W. Kim, Appl. Phys. Lett. 85, 5598 (2004)."",""I. Bhat, H. Ehsani, W. S. Wang, S. K. Ghandhi, and N. H. Karam, J. Vac. Sci. Technol. B 10, 1376 (1992)."",""W.-S. Wang, H. E. Ehsani, and I. B. Bhat, J. Cryst. Growth 124, 670 (1992).""]" +SbxTey,,,,Amorphous,Rhombohed-ral Sb2Te3,Sb-like rhombohedral,,[],[],[],[],[],[],[] +,SbCl3,(Et3Si)2Te,Si,,60,,1148,[1148],"[""10.1021/ja8090388""]","[""Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium""]","[[""Pore, Viljami"",""Hatanp a a, Timo"",""Ritala, Mikko"",""Leskel a, Markku""]]",[2009],"[""J. Am. Chem. Soc.""]","[""V. Pore, T. Hatanp€a€a, M. Ritala, and M. Leskel€a, J. Am. Chem. Soc. 131, 3478 (2009).""]" +,SbCl3,(Et3Si)2Te-(Et3Si)2Sb,Si,,,95,534,[534],"[""""]","[""Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates""]","[[""S. Hirose"",""A. Yoshida"",""M. Yamaura"",""N. Kano"",""H. Munekata""]]",[2000],"[""J. Mater. Sci.: Mater. Electron.""]","[""S. Hirose, A. Yoshida, M. Yamaura, N. Kano, and H. Munekata, J. Mater. Sci.: Mater. Electron. 11, 7 (2000).""]" +HgTe,,,,Amorphous,Cubic,,,[],[],[],[],[],[],[] +,HgMe2,TeMe(allyl),"GaAse, Si",,140,,1748 and 1750,"[1748,1750]","["""",""""]","[""Dimensional structural transition in CdTe/Cd _x Zn _ 1�x Te nanostructures"",""ATOMIC LAYER EPITAXY OF CdTe ON GaAs , BY ORGANOMETALLIC VAPOR-PHASE EPITAXY""]","[[""H. S. Lee"",""H. L. Park"",""T. W. Kim""],[""W.-S. Wang"",""H. E. Ehsani"",""I. B. Bhat""]]","[2004,1992]","[""Appl. Phys. Lett."",""J. Cryst. Growth""]","[""H. S. Lee, H. L. Park, and T. W. Kim, Appl. Phys. Lett. 85, 5598 (2004)."",""W.-S. Wang, H. E. Ehsani, and I. B. Bhat, J. Cryst. Growth 124, 670 (1992).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_059_table_040/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_059_table_040/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..ee9d3e36c6b1e7e11edb929bf353aa3e3225e935 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_059_table_040/gold.csv @@ -0,0 +1,56 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +Al,,,,Amorphous,Crystalline,,[],[],[],[],[],[],[] +,AlMe3,H2⚡,"Si, SiO2, TiN",,250,71 and 72,"[71,72]","["""",""""]","[""Study on the characteristics of aluminum thin films prepared by atomic layer deposition"",""Atomic Layer Deposition of Aluminum Thin Films Using an Alternating Supply of Trimethylaluminum and a Hydrogen Plasma""]","[[""Y. J. Lee"",""S.-W. Kang""],[""Y. J. Lee"",""S.-W. Kang""]]","[2002,2002]","[""J. Vac. Sci. Technol., A"",""Electrochem. Solid-State Lett.""]","[""Y. J. Lee and S.-W. Kang, J. Vac. Sci. Technol. A 20, 1983 (2002)."",""Y. J. Lee and S.-W. Kang, Electrochem. Solid-State Lett. 5, C91 (2002).""]" +Si,,,,,,,[],[],[],[],[],[],[] +,Si2Cl6,Si2H6,Ge(100)e,,465,548,[548],"[""""]","[""Si ALE using chlorine/hydrogen exchange. F undamentals and films""]","[[""D. D. Koleske"",""S. M. Gates""]]",[1994],"[""Appl. Surf. Sci.""]","[""D. D. Koleske and S. M. Gates, Appl. Surf. Sci. 82/83, 344 (1994).""]" +,SiCl2H2,H2⚡,Ge(100)e,,465,548,[548],"[""""]","[""Si ALE using chlorine/hydrogen exchange. F undamentals and films""]","[[""D. D. Koleske"",""S. M. Gates""]]",[1994],"[""Appl. Surf. Sci.""]","[""D. D. Koleske and S. M. Gates, Appl. Surf. Sci. 82/83, 344 (1994).""]" +,SiCl2H2,H2,H-Si(100)e,,815-825,542 and 543,"[542,543]","["""",""""]","[""Self-limiting atomic-layer deposition of Si on SiO _2 by alternate supply of Si _2 H _6 and SiCl _4"",""SILICON MOLECULAR LAYER EPITAXY""]","[[""S. Yokoyama"",""K. Ohba"",""A. Nakajima""],[""J. Nishizawa"",""K. Aoki"",""S. Suzuki"",""K. Kikuchi""]]","[2001,1990]","[""Appl. Phys. Lett."",""J. Electrochem. Soc.""]","[""S. Yokoyama, K. Ohba, and A. Nakajima, Appl. Phys. Lett. 79, 617 (2001)."",""J. Nishizawa, K. Aoki, S. Suzuki, and K. Kikuchi, J. Electrochem. Soc. 137, 1898 (1990).""]" +,SiCl2H2,H2,H-Si(111)e,,890-910,543,[543],"[""""]","[""SILICON MOLECULAR LAYER EPITAXY""]","[[""J. Nishizawa"",""K. Aoki"",""S. Suzuki"",""K. Kikuchi""]]",[1990],"[""J. Electrochem. Soc.""]","[""J. Nishizawa, K. Aoki, S. Suzuki, and K. Kikuchi, J. Electrochem. Soc. 137, 1898 (1990).""]" +Fe,,,,,,,[],[],[],[],[],[],[] +,Fe(tBuNCMeNtBu)2,H2,"SiO2, glass",,250,1053,[1053],"[""""]","[""Atomic layer deposition of transition metals""]","[[""B. S. Lim"",""A. Rahtu"",""R. G. Gordon""]]",[2003],"[""Nat. Mater.""]","[""B. S. Lim, A. Rahtu, and R. G. Gordon, Nature Mater. 2, 749 (2003).""]" +Co,,,,,,,[],[],[],[],[],[],[] +,Co(iPrNCMeNiPr)2,H2,"SiO2, glass",,350,1053,[1053],"[""""]","[""Atomic layer deposition of transition metals""]","[[""B. S. Lim"",""A. Rahtu"",""R. G. Gordon""]]",[2003],"[""Nat. Mater.""]","[""B. S. Lim, A. Rahtu, and R. G. Gordon, Nature Mater. 2, 749 (2003).""]" +,Co(iPrNCMeNiPr)2,H2,"SiO2, WN",,300,1067,[1067],"[""""]","[""Nucleation and adhesion of ALD copper on cobalt adhesion layers and tungsten nitride diffusion barriers""]","[[""Li, Z. W."",""Gordon, R. G."",""Farmer, D. B."",""Lin, Y. B."",""Vlassak, J.""]]",[2005],"[""Electrochem. Solid-State Lett.""]","[""Z. W. Li, R. G. Gordon, D. B. Farmer, Y. B. Lin, and J. Vlassak, Electrochem. Solid-State Lett. 8, G182 (2005).""]" +,CoCp2,NH3⚡,Si,,300,1071,[1071],"[""""]","[""Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co""]","[[""Lee, H. B. R."",""Son, J. Y."",""Kim, H.""]]",[2007],"[""Appl. Phys. Lett.""]","[""H. B. R. Lee, J. Y. Son, and H. Kim, Appl. Phys. Lett. 90, 213509 (2007).""]" +,CoCp(CO)2,NH3⚡,"SiO2, Si",,250–400,1073,[1073],"[""""]","[""High-quality cobalt thin films by plasma-enhanced atomic layer deposition""]","[[""Lee, H. B. R."",""Kim, H.""]]",[2006],"[""Electrochem. Solid-State Lett.""]","[""H. B. R. Lee and H. Kim, Electrochem. Solid-State Lett. 9, G323 (2006).""]" +,CoCp(CO)2,H2⚡,H-Si,,125–175,1076,[1076],"[""""]","[""Characteristics of Ti-capped Co films deposited by a remote plasma ALD method using cyclopentadienylcobalt dicarbonyl""]","[[""Lee, K."",""Kim, K."",""Park, T."",""Jeon, H."",""Lee, Y."",""Kim, J."",""Yeom, S.""]]",[2007],"[""J. Electrochem. Soc.""]","[""K. Lee, K. Kim, T. Park, H. Jeon, Y. Lee, J. Kim, and S. Yeom, J. Electrochem. Soc. 154, H899 (2007).""]" +,Co2(CO)8,H2⚡,H-Si,75–110,,1077,[1077],"[""""]","[""Characteristics of cobalt thin films deposited by remote plasma ALD method with dicobalt octacarbonyl""]","[[""Kim, K."",""Lee, K."",""Han, S."",""Jeong, W."",""Jeon, H.""]]",[2007],"[""J. Electrochem. Soc.""]","[""K. Kim, K. Lee, S. Han, W. Jeong, and H. Jeon, J. Electrochem. Soc. 154, H177 (2007).""]" +Ni,,,,,,,[],[],[],[],[],[],[] +,Ni(iPrNCMeNiPr)2,H2,"SiO2, glass",,250,1053,[1053],"[""""]","[""Atomic layer deposition of transition metals""]","[[""B. S. Lim"",""A. Rahtu"",""R. G. Gordon""]]",[2003],"[""Nat. Mater.""]","[""B. S. Lim, A. Rahtu, and R. G. Gordon, Nature Mater. 2, 749 (2003).""]" +,Ni(acac)2,H2,"Ti, Al, Si",,250,1092,[1092],"[""""]","[""Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac) _2 ( M = Ni, Cu, Pt ) precursors""]","[[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L.-S. Johansson"",""L. Niinist o""]]",[2000],"[""Appl. Surf. Sci.""]","[""M. Utriainen, M. Kr€oger-Laukkanen, L.-S. Johansson, and L. Niinist€o, Appl. Surf. Sci. 157, 151 (2000).""]" +,Ni(hfip)2,H2,H-Si,,225,1094,[1094],"[""10.1143/JJAP.46.1981""]","[""Effectiveness of self-carbon and titanium capping layers in NiSi formation with Ni film deposited by atomic layer deposition""]","[[""Yang, Chung-Mo"",""Yun, Sang-Won"",""Ha, Jong-Bong"",""Na, Kyung-Il"",""Cho, Hyun-Ick"",""Lee, Heon-Bok"",""Jeong, Jong-Hwa"",""Kong, Sung-Ho"",""Hahm, Sung-Ho"",""Lee, Jung-Hee""]]",[2007],"[""Jpn. J. Appl. Phys.""]","[""C.-M. Yang, S.-W. Yun, J.-B. Ha, K.-I. Na, H.-I. Cho, H.-B. Lee, J.-H. Jeong, S.-H. Kong, S.-H. Hahm, and J.-H. Lee, Jpn. J. Appl. Phys., Part 1 46, 1981 (2007).""]" +Cu,,,,,,,[],[],[],[],[],[],[] +,CuCl,H2+H2O,Al2O3,,425,1114,[1114],"[""""]","[""Copper nanoparticles deposited inside the pores of anodized aluminium oxide using atomic layer deposition""]","[[""A. Johansson"",""T. T orndahl"",""L. M. Ottosson"",""M. Boman"",""J.-O. Carlsson""]]",[2003],"[""Mater. Sci. Eng. C""]","[""A. Johansson, T. T€orndahl, L. M. Ottosson, M. Boman, and J.-O. Carlsson, Mater. Sci. Eng., C 23, 823 (2003).""]" +,CuCl,H2-H2O,"Al2O3, SiO2",,375–475,1113 and 1114,"[1113,1114]","["""",""""]","[""Growth of copper metal by atomic layer deposition using copper(I) chloride, water and hydrogen as precursors"",""Copper nanoparticles deposited inside the pores of anodized aluminium oxide using atomic layer deposition""]","[[""T. T orndahl"",""M. Ottosson"",""J.-O. Carlsson""],[""A. Johansson"",""T. T orndahl"",""L. M. Ottosson"",""M. Boman"",""J.-O. Carlsson""]]","[2004,2003]","[""Thin Solid Films"",""Mater. Sci. Eng. C""]","[""T. T€orndahl, M. Ottosson, and J.-O. Carlsson, Thin Solid Films 458, 129 (2004)."",""A. Johansson, T. T€orndahl, L. M. Ottosson, M. Boman, and J.-O. Carlsson, Mater. Sci. Eng., C 23, 823 (2003).""]" +,CuCl,H2-H2O,Al2O3e,,400,2374,[2374],"[""""]","[""""]",[[]],[null],"[""""]","[""T. T€orndahl, J. Lu, M. Ottosson, and J. O. Carlsson, J. Cryst. Growth 276, 102 (2005).""]" +,CuCl,Zn,Al2O3,,500,1115,[1115],"[""""]","[""Deposition of Copper Thin Films by anAlternate Supply of CuCl and Zn""]","[[""M. Juppo"",""M. Ritala"",""M. Leskela""]]",[1997],"[""J. Vac. Sci. Technol., A""]","[""M. Juppo, M. Ritala, and M. Leskel€a, J. Vac. Sci. Technol. A 15, 2330 (1997).""]" +,Cu(hfac)2,NH3-H2O,SiO2,,283–302,1141,[1141],"[""""]","[""Growth of copper(I) nitride by ALD using copper(II) hexafluoroacetylacetonate, water, and ammonia as precursors""]","[[""T orndahl, T."",""Ottosson, M."",""Carlsson, J. O.""]]",[2006],"[""J. Electrochem. Soc.""]","[""T. T€orndahl, M. Ottosson, and J. O. Carlsson, J. Electrochem. Soc. 153, C146 (2006).""]" +,Cu(hfac)2·XH2O,formalin,"TiN, TaN, Ta",,300,1124,[1124],"[""""]","[""Atomic Layer Deposition of Copper Seed Layers""]","[[""R. Solanki"",""B. Pathangey""]]",[2000],"[""Electrochem. Solid-State Lett.""]","[""R. Solanki and B. Pathangey, Electrochem. Solid-State Lett. 3, 479 (2000).""]" +,Cu(hfac)2+H2+H2O,MeOH,"TiN, TaN, Cu, Ta, glass",,300,1138,[1138],"[""""]","[""Characteristics of copper films produced via atomic layer deposition""]","[[""J. S. Huo"",""R. Solanki"",""J. McAndrew""]]",[2002],"[""J. Mater. Res.""]","[""J. S. Huo, R. Solanki, and J. McAndrew, J. Mater. Res. 17, 2394 (2002).""]" +,Cu(hfac)2+H2+H2O,EtOH,"TiN, TaN, Cu, Ta, glass",,300,1138,[1138],"[""""]","[""Characteristics of copper films produced via atomic layer deposition""]","[[""J. S. Huo"",""R. Solanki"",""J. McAndrew""]]",[2002],"[""J. Mater. Res.""]","[""J. S. Huo, R. Solanki, and J. McAndrew, J. Mater. Res. 17, 2394 (2002).""]" +,Cu(hfac)2+H2+H2O,iPrOH,"TiN, TaN, Cu, Ta, glass",,300,1138,[1138],"[""""]","[""Characteristics of copper films produced via atomic layer deposition""]","[[""J. S. Huo"",""R. Solanki"",""J. McAndrew""]]",[2002],"[""J. Mater. Res.""]","[""J. S. Huo, R. Solanki, and J. McAndrew, J. Mater. Res. 17, 2394 (2002).""]" +,Cu(hfac)2+H2+H2O,formalin,"TiN, TaN, Cu, Ta, glass",,300,1138,[1138],"[""""]","[""Characteristics of copper films produced via atomic layer deposition""]","[[""J. S. Huo"",""R. Solanki"",""J. McAndrew""]]",[2002],"[""J. Mater. Res.""]","[""J. S. Huo, R. Solanki, and J. McAndrew, J. Mater. Res. 17, 2394 (2002).""]" +,Cu(hfac)2+H2+H2O,CO,"TiN, TaN, Cu, Ta, glass",,300,1138,[1138],"[""""]","[""Characteristics of copper films produced via atomic layer deposition""]","[[""J. S. Huo"",""R. Solanki"",""J. McAndrew""]]",[2002],"[""J. Mater. Res.""]","[""J. S. Huo, R. Solanki, and J. McAndrew, J. Mater. Res. 17, 2394 (2002).""]" +,Cu(hfac)(vtmos),H2 ⚡,TiN,,200–300,1126,[1126],"[""""]","[""Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor""]","[[""Moon, Dae-Yong"",""Kim, Woong-Sung"",""Kim, Tae-Sub"",""Kang, Byung-Woo"",""Park, Jong-Wan"",""Yeom, Seun Jin"",""Kim, Jae Hong""]]",[2009],"[""J. Korean Phys. Soc.""]","[""D.-Y. Moon, W.-S. Kim, T.-S. Kim, B.-W. Kang, J.-W. Park, S. J. Yeom, and J. H. Kim, J. Korean Phys. Soc. 54, 1330 (2009).""]" +,Cu(acac)2,H2,"Ti, Al, glass",,250,1092,[1092],"[""""]","[""Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac) _2 ( M = Ni, Cu, Pt ) precursors""]","[[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L.-S. Johansson"",""L. Niinist o""]]",[2000],"[""Appl. Surf. Sci.""]","[""M. Utriainen, M. Kr€oger-Laukkanen, L.-S. Johansson, and L. Niinist€o, Appl. Surf. Sci. 157, 151 (2000).""]" +,Cu(acac)2,H2⚡,"Si, glass",,140,1116,[1116],"[""""]","[""Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films""]","[[""A Niskanen"",""A. Rahtu"",""T. Sajavaara"",""K. Arstila"",""M. Ritala"",""M. Leskel a""]]",[2005],"[""J. Electrochem. Soc.""]","[""A. Niskanen, A. Rahtu, T. Sajavaara, K. Arstila, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 152, G25 (2005).""]" +,Cu(thd)2,H2,"SLG-Pt/Pd, SiO2, glass",,190–350,"1119, 1120, and 1122","[1119,1120,1122]","["""","""",""10.1116/1.3143663""]","[""Atomic layer epitaxy of copper - Growth and selectivity in the Cu (II)b,2,6,6-tetramethylc,5-heptanedionate/ H _2 process"",""Atomic layer chemical vapour deposition of copper"",""Characterization of ALD copper thin films on palladium seed layers""]","[[""P. M rtensson"",""J.-O. Carlsson""],[""A. U. Mane"",""S. A. Shivashankar""],[""Hsu, Irene J."",""McCandless, Brian E."",""Weiland, Conan"",""Willis, Brian G.""]]","[1998,2004,2009]","[""J. Electrochem. Soc."",""Mater. Sci. Semicond. Process."",""J. Vac. Sci. Technol., A""]","[""P. Ma˚rtensson and J.-O. Carlsson, J. Electrochem. Soc. 145, 2926 (1998)."",""A. U. Mane and S. A. Shivashankar, Mater. Sci. Semicond. Process. 7, 343 (2004)."",""I. J. Hsu, B. E. McCandless, C. Weiland, and B. G. Willis, J. Vac. Sci. Technol. A 27, 660 (2009).""]" +,Cu(thd)2,H2⚡,"Au, TaNx, SiO2",,90–250,1123,[1123],"[""""]","[""Inductively coupled hydrogen plasma-assisted Cu ALD on metallic and dielectric surfaces""]","[[""Jezewski, C."",""Lanford, W. A."",""Wiegand, C. J."",""Singh, J. P."",""Wang, P. I."",""Senkevich, J. J."",""Lu, T. M.""]]",[2005],"[""J. Electrochem. Soc.""]","[""C. Jezewski, W. A. Lanford, C. J. Wiegand, J. P. Singh, P. I. Wang, J. J. Senkevich, and T. M. Lu, J. Electrochem. Soc. 152, C60 (2005).""]" +,Cu(dmap)2,ZnEt2,Si,,100–120,1132,[1132],"[""10.1002/anie.200900414""]","[""Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc""]","[[""Lee, Byoung H."",""Hwang, Jae K."",""Nam, Jae W."",""Lee, Song U."",""Kim, Jun T."",""Koo, Sang-M."",""Baunemann, A."",""Fischer, Roland A."",""Sung, Myung M.""]]",[2009],"[""Angew. Chem., Int. Ed.""]","[""B. H. Lee, J. K. Hwang, J. W. Nam, S. U. Lee, J. T. Kim, S.-M. Koo, A. Baunemann, R. A. Fischer, and M. M. Sung, Angew. Chem., Int. Ed. 48, 4536 (2009).""]" +,[Cu(iPrNCMeNiPr)]2,H2,"SiO2, glass, Co, WN",,190–280,1053 and 1067,"[1053,1067]","["""",""""]","[""Atomic layer deposition of transition metals"",""Nucleation and adhesion of ALD copper on cobalt adhesion layers and tungsten nitride diffusion barriers""]","[[""B. S. Lim"",""A. Rahtu"",""R. G. Gordon""],[""Li, Z. W."",""Gordon, R. G."",""Farmer, D. B."",""Lin, Y. B."",""Vlassak, J.""]]","[2003,2005]","[""Nat. Mater."",""Electrochem. Solid-State Lett.""]","[""B. S. Lim, A. Rahtu, and R. G. Gordon, Nature Mater. 2, 749 (2003)."",""Z. W. Li, R. G. Gordon, D. B. Farmer, Y. B. Lin, and J. Vlassak, Electrochem. Solid-State Lett. 8, G182 (2005).""]" +,[Cu(sBuNCMeNsBu)]2,H2,"Al2O3, SiO2, Si3N4, glass, Ru, Co, Cu, WN",,150–190,1127,[1127],"[""""]","[""Atomic layer deposition of ultrathin copper metal films from a liquid copper(I) amidinate precursor""]","[[""Li, Z. W."",""Rahtu, A."",""Gordon, R. G.""]]",[2006],"[""J. Electrochem. Soc.""]","[""Z. W. Li, A. Rahtu, and R. G. Gordon, J. Electrochem. Soc. 153, C787 (2006).""]" +Zn,,,,,,,[],[],[],[],[],[],[] +,ZnEt2,H2O,silica,,200,1149,[1149],"[""""]","[""Conformal ZnO coatings on high surface area silica gel using atomic layer deposition""]","[[""Libera, J. A."",""Elam, J. W."",""Pellin, M. J.""]]",[2008],"[""Thin Solid Films""]","[""J. A. Libera, J. W. Elam, and M. J. Pellin, Thin Solid Films 516, 6158 (2008).""]" +Ge,,,,,,,[],[],[],[],[],[],[] +,GeMe2H2,H2⚡,SiO2e,,480,1494,[1494],"[""""]","[""Hetero atomic-layer epitaxy of Ge on Si (100)""]","[[""M. Matsuyama"",""S. Sugahara"",""K. Ikeda"",""Y. Uchida"",""M. Matsumura""]]",[2000],"[""Jpn. J. Appl. Phys.""]","[""M. Matsuyama, S. Sugahara, K. Ikeda, Y. Uchida, and M. Matsumura, Jpn. J. Appl. Phys. 39, 2536 (2000).""]" +Mo,,,,,,,[],[],[],[],[],[],[] +,MoCl5,Zn,"Al2O3, SLG",,400–500,1634,[1634],"[""""]","[""Evaluation of atomic layer deposited NbN and NbSiN as metal gate materials""]","[[""Van Hoornick, N."",""De Witte, H."",""Witters, T."",""Zhao, C."",""Conard, T."",""Huotari, H."",""Swerts, J."",""Schram, T."",""Maes, J. W."",""De Gendt, S."",""Heyns, M.""]]",[2006],"[""J. Electrochem. Soc.""]","[""N. Van Hoornick, H. De Witte, T. Witters, C. Zhao, T. Conard, H. Huotari, J. Swerts, T. Schram, J. W. Maes, S. De Gendt, and M. Heyns, J. Electrochem. Soc. 153, G437 (2006).""]" +Ru,,,,,,,[],[],[],[],[],[],[] +,Ru(chd)(ipmp),O2,SiO2,,220,1641,[1641],"[""""]","[""Thin films of MoN, WN, and perfluorinated silane deposited from dimethylamido precursors as contamination resistant coatings on micro-injection mold inserts""]","[[""Miikkulainen, V."",""Suvanto, M."",""Pakkanen, T. A."",""Siitonen, S."",""Karvinen, P."",""Kuittinen, M."",""Kisonen, H.""]]",[2008],"[""Surf. Coat. Technol.""]","[""V. Miikkulainen, M. Suvanto, T. A. Pakkanen, S. Siitonen, P. Karvinen, M. Kuittinen, and H. Kisonen, Surf. Coat. Technol. 202, 5103 (2008).""]" +,Ru(Cp)2,O2,"Al2O3, TiO2, SiO2, HfO2, HfSiOx, Ta2O5, carbon aerogel",,275–400,"1643, 1646, 1647, and 1650","[1643,1646,1647,1650]","[""10.1149/1.3207867"","""","""",""""]","[""Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2"",""Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature"",""Investigation of atomic-layer-deposited ruthenium nanocrystal growth on SiO2 and Al2O3 films"",""Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications""]","[[""Eom, Tae-Kwang"",""Sari, Windu"",""Choi, Kyu-Jeong"",""Shin, Woong-Chul"",""Kim, Jae Hyun"",""Lee, Do-Joong"",""Kim, Ki-Bum"",""Sohn, Hyunchul"",""Kim, Soo-Hyun""],[""T. Aaltonen"",""M. Ritala"",""Y. L. Tung"",""Y. Chi"",""K. Arstila"",""K. Meinander"",""M. Leskel a""],[""Zhang, M."",""Chen, W."",""Ding, S. J."",""Wang, X. P."",""Zhang, D. W."",""Wang, L. K.""],[""Zhang, M."",""Chen, W."",""Ding, S. J."",""Liu, Z. Y."",""Huang, Y."",""Liao, Z. W."",""Zhang, D. W.""]]","[2009,2004,2007,2008]","[""Electrochem. Solid-State Lett."",""J. Mater. Res."",""J. Vac. Sci. Technol., A"",""J. Phys. D: Appl. Phys.""]","[""T.-K. Eom, W. Sari, K.-J. Choi, W.-C. Shin, J. H. Kim, D.-J. Lee, K.-B. Kim, H. Sohn, and S.-H. Kim, Electrochem. Solid-State Lett. 12, D85 (2009)."",""T. Aaltonen, M. Ritala, Y. L. Tung, Y. Chi, K. Arstila, K. Meinander, and M. Leskel€a, J. Mater. Res. 19, 3353 (2004)."",""M. Zhang, W. Chen, S. J. Ding, X. P. Wang, D. W. Zhang, and L. K. Wang, J. Vac. Sci. Technol. A 25, 775 (2007)."",""M. Zhang, W. Chen, S. J. Ding, Z. Y. Liu, Y. Huang, Z. W. Liao, and D. W. Zhang, J. Phys. D: Appl. Phys. 41, 032007 (2008).""]" +,Ru(Cp)2,NH3⚡,"TaNx, Ta2O5, H-Si, SiO2",,300,1649,[1649],"[""""]","[""Ruthenium/aerogel nanocomposites via atomic layer deposition""]","[[""Biener, J."",""Baumann, T. F."",""Wang, Y. M."",""Nelson, E. J."",""Kucheyev, S. O."",""Hamza, A. V."",""Kemell, M."",""Ritala, M."",""Leskel a, M.""]]",[2007],"[""Nanotechnology""]","[""J. Biener, T. F. Baumann, Y. M. Wang, E. J. Nelson, S. O. Kucheyev, A. V. Hamza, M. Kemell, M. Ritala, and M. Leskel€a, Nanotechnology 18, 055303 (2007).""]" +,Ru(EtCp)2,O2,"Si, SiO2, TiN, Ta2O5",,270–300,"1652, 1654, and 1687","[1652,1654,1687]","["""","""",""""]","[""Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen"",""Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer"",""Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd) _3 and Oxygen""]","[[""Sang-Joon Park"",""Woo-Hee Kim"",""W.J. Maeng"",""Y.S. Yang"",""C.G. Park"",""Hyungjun Kim"",""Kook-Nyung Lee"",""Suk-Won Jung"",""W.K. Seong""],[""O.-K. Kwon"",""J.-H. Kim"",""H.-S. Park"",""S.-W. Kang""],[""T. Aaltonen"",""M. Ritala"",""K. Arstila"",""J. Keinonen"",""M. Leskel a""]]","[2008,2004,2004]","[""Thin Solid Films"",""J. Electrochem. Soc."",""Chem. Vap. Deposition""]","[""S.-J. Park, W.-H. Kim, W. Maeng, Y. Yang, C. Park, H. Kim, K.-N. Lee, S.-W. Jung, and W. Seong, Thin Solid Films 516, 7345 (2008)."",""O.-K. Kwon, J.-H. Kim, H.-S. Park, and S.-W. Kang, J. Electrochem. Soc. 151, G109 (2004)."",""T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskel€a, Chem. Vap. Deposition 10, 215 (2004).""]" +,Ru(EtCp)2,NH3⚡,"TaN,Si",290,,1669,[1669],"[""10.1016/j.tsf.2009.01.117""]","[""Interface roughness effect between gate oxide and metal gate on dielectric property""]","[[""Son, J. Y."",""Maeng, W. J."",""Kim, Woo-Hee"",""Shin, Y. H."",""Kim, Hyungjun""]]",[2009],"[""Thin Solid Films""]","[""J. Y. Son, W. J. Maeng, W.-H. Kim, Y. H. Shin, and H. Kim, Thin Solid Films 517, 3892 (2009).""]" +,Ru(EtCp)2,NH3⚡,"TiN, TaNx, Ta2O5, H-Si, SiO2, Si",100–200,270–350,"1650, 1661, 1662, 1666, and 1670","[1650,1661,1662,1666,1670]","["""",""10.1063/1.3275346"","""","""",""10.1116/1.3122664""]","[""Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications"",""Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO2/Al2O3 bilayered tunnel barrier"",""Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 angstrom on Ru metal electrode"",""Initial stages of ruthenium film growth in plasma-enhanced atomic layer deposition"",""Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications""]","[[""Zhang, M."",""Chen, W."",""Ding, S. J."",""Liu, Z. Y."",""Huang, Y."",""Liao, Z. W."",""Zhang, D. W.""],[""Lee, Do-Joong"",""Yim, Sung-Soo"",""Kim, Ki-Su"",""Kim, Soo-Hyun"",""Kim, Ki-Bum""],[""Kim, J. H."",""Yoon, S. G."",""Yeom, S. J."",""Woo, H. K."",""Kil, D. S."",""Roh, J. S."",""Sohn, H. C.""],[""Kwon, S. H."",""Kwon, O. K."",""Kim, J. H."",""Oh, H. R."",""Kim, K. H."",""Kang, S. W.""],[""Kumar, Sumit"",""Greenslit, Daniel"",""Chakraborty, Tonmoy"",""Eisenbraun, Eric T.""]]","[2008,2010,2005,2008,2009]","[""J. Phys. D: Appl. Phys."",""J. Appl. Phys."",""Electrochem. Solid-State Lett."",""J. Electrochem. Soc."",""J. Vac. Sci. Technol., A""]","[""M. Zhang, W. Chen, S. J. Ding, Z. Y. Liu, Y. Huang, Z. W. Liao, and D. W. Zhang, J. Phys. D: Appl. Phys. 41, 032007 (2008)."",""D.-J. Lee, S.-S. Yim, K.-S. Kim, S.-H. Kim, and K.-B. Kim, J. Appl. Phys. 107, 013707 (2010)."",""J. H. Kim, S. G. Yoon, S. J. Yeom, H. K. Woo, D. S. Kil, J. S. Roh, and H. C. Sohn, Electrochem. Solid-State Lett. 8, F17 (2005)."",""S. H. Kwon, O. K. Kwon, J. H. Kim, H. R. Oh, K. H. Kim, and S. W. Kang, J. Electrochem. Soc. 155, H296 (2008)."",""S. Kumar, D. Greenslit, T. Chakraborty, and E. T. Eisenbraun, J. Vac. Sci. Technol. A 27, 572 (2009).""]" +,Ru(EtCp)2,H2⚡-O2,TiO2,,300,900,[900],"[""""]","[""Structurally and electrically uniform deposition of high-k TiO2 thin films on a Ru electrode in three-dimensional contact holes using atomic layer deposition""]","[[""Kim, S. K."",""Kim, K. M."",""Kwon, O. S."",""Lee, S. W."",""Jeon, C. B."",""Park, W. Y."",""Hwang, C. S."",""Jeong, J.""]]",[2005],"[""Electrochem. Solid-State Lett.""]","[""S. K. Kim, K. M. Kim, O. S. Kwon, S. W. Lee, C. B. Jeon, W. Y. Park, C. S. Hwang, and J. Jeong, Electrochem. Solid-State Lett. 8, F59 (2005).""]" +,Ru(EtCp)2,H2+N2⚡,"O-Si, SiO2",,200–230,994 and 1671,"[994,1671]","["""",""10.1016/j.mee.2009.11.163""]","[""Plasma-enhanced atomic layer deposition of Ru-TiN thin films for copper diffusion barrier metals"",""Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition""]","[[""Kwon, S. H."",""Kwon, O. K."",""Min, J. S."",""Kang, S. W.""],[""Choi, Bum Ho"",""Lim, Yong Hwan"",""Lee, Jong Ho"",""Kim, Young Baek"",""Lee, Ho-Nyun"",""Lee, Hong Kee""]]","[2006,2010]","[""J. Electrochem. Soc."",""Microelectron. Eng.""]","[""S. H. Kwon, O. K. Kwon, J. S. Min, and S. W. Kang, J. Electrochem. Soc. 153, G578 (2006)."",""B. H. Choi, Y. H. Lim, J. H. Lee, Y. B. Kim, H.-N. Lee, and H. K. Lee, Microelectron. Eng. 87, 1391 (2010).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_060_table_041/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_060_table_041/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..b7f849094837f5abc0cf79d9b3160df4aea63ab5 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_060_table_041/gold.csv @@ -0,0 +1,38 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Ru(EtCp)(dmp),O2,"Si, Au, Pt, Al2O3, SiO2, TiO2, TiN",,230–290,"906, 1672, 1673, and 1677","[906,1672,1673,1677]","[""10.1149/1.3125713"",""10.1016/j.mee.2009.11.020"",""10.1149/1.2975341"",""10.1021/cm901032q""]","[""Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications"",""Texture of atomic layer deposited ruthenium"",""Improvement of copper diffusion barrier properties of tantalum nitride films by incorporating ruthenium using PEALD"",""Atomic Layer Deposition of Ruthenium Nanoparticles Using a Low-Density Dielectric Film as Template Structure""]","[[""Choi, Gyu-Jin"",""Kim, Seong Keun"",""Lee, Sang Young"",""Park, Woo Young"",""Seo, Minha"",""Choi, Byung Joon"",""Hwang, Cheol Seong""],[""Musschoot, J."",""Xie, Q."",""Deduytsche, D."",""De Keyser, K."",""Longrie, D."",""Haemers, J."",""Van den Berghe, S."",""Van Meirhaeghe, R. L."",""D'Haen, J."",""Detavernier, C.""],[""Kim, Sung-Wook"",""Kwon, Se-Hun"",""Jeong, Seong-Jun"",""Kang, Sang-Won""],[""Heo, Jaeyeong"",""Eom, Dail"",""Lee, Sang Young"",""Won, Seok-Jun"",""Park, Sanghyun"",""Hwang, Cheol Seong"",""Kim, Hyeong Joon""]]","[2009,2010,2008,2009]","[""J. Electrochem. Soc."",""Microelectron. Eng."",""J. Electrochem. Soc."",""Chem. Mater.""]","[""G.-J. Choi, S. K. Kim, S. Y. Lee, W. Y. Park, M. Seo, B. J. Choi, and C. S. Hwang, J. Electrochem. Soc. 156, G71 (2009)."",""J. Musschoot, Q. Xie, D. Deduytsche, K. De Keyser, D. Longrie, J. Haemers, S. Van den Berghe, R. L. Van Meirhaeghe, J. D’Haen, and C. Detavernier, Microelectron. Eng. 87, 1879 (2010)."",""S.-W. Kim, S.-H. Kwon, S.-J. Jeong, and S.-W. Kang, J. Electrochem. Soc. 155, H885 (2008)."",""J. Heo, D. Eom, S. Y. Lee, S.-J. Won, S. Park, C. S. Hwang, and H. J. Kim, Chem. Mater. 21, 4006 (2009).""]" +,RuCp(CpCH(Me)(NMe2)),O2,Al2O3,,325–500,1680,[1680],"[""10.1016/j.susc.2009.02.003""]","[""Surface chemistry of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru on polycrystalline Ta""]","[[""Thom, Kelly M."",""Ekerdt, J. G.""]]",[2009],"[""Surf. Sci.""]","[""K. M. Thom and J. G. Ekerdt, Surf. Sci. 603, 921 (2009).""]" +,Ru(thd)3,O2,Al2O3,,325–400,1685 and 1686,"[1685,1686]","["""",""""]","[""Ruthenium Oxide Nanotube Arrays Fabricated by Atomic Layer Deposition Using a Carbon Nanotube Template"",""Deposition of palladium and ruthenium eta -diketonates on alumina and silica supports in gas and liquid phase""]","[[""Y.-S. Min"",""E. J. Bae"",""K. S. Jeong"",""Y. J. Cho"",""J.-H. Lee"",""W. B. Choi"",""G.-S. Park""],[""M. Lashdaf"",""T. Hatanp a a"",""A. O. I. Krause"",""J. Lahtinen"",""M. Lindblad"",""M. Tiitta""]]","[2003,2003]","[""Adv. Mater."",""Appl. Catal., A.""]","[""Y.-S. Min, E. J. Bae, K. S. Jeong, Y. J. Cho, J.-H. Lee, W. B. Choi, and G.-S. Park, Adv. Mater. 15, 1019 (2003)."",""M. Lashdaf, T. Hatanp€a€a, A. O. I. Krause, J. Lahtinen, M. Lindblad, and M. Tiitta, Appl. Catal., A 241, 51 (2003).""]" +,Ru(tBuAMD)2(CO)2,O2,O-Si,,300–400,1688,[1688],"[""10.1021/jp9021882""]","[""Growth of Noble Metal Ru Thin Films by Liquid Injection Atomic Layer Deposition""]","[[""Kim, Seong Keun"",""Hoffmann-Eifert, Susanne"",""Waser, Rainer""]]",[2009],"[""J. Phys. Chem. C""]","[""S. K. Kim, S. Hoffmann-Eifert, and R. Waser, J. Phys. Chem. C 113, 11329 (2009).""]" +,Ru(tBuAMD)2(CO)2,NH3,WN,,250–300,1689,[1689],"[""""]","[""Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)(2) Precursor and Oxygen Gas""]","[[""Kim, Woo-Hee"",""Park, Sang-Joon"",""Kim, Do Young"",""Kim, Hyungjun""]]",[2009],"[""J. Korean Phys. Soc.""]","[""W.-H. Kim, S.-J. Park, D. Y. Kim, and H. Kim, J. Korean Phys. Soc. 55, 32 (2009).""]" +Rh,,,,,,,[],[],[],[],[],[],[] +,Rh(acac)3,O2,Al2O3,,250,1694,[1694],"[""""]","[""Modified atomic layer deposition of RuO2 thin films for capacitor electrodes""]","[[""Kim, J. H."",""Kil, D. S."",""Yeom, S. J."",""Roh, J. S."",""Kwak, N. J."",""Kim, J. W.""]]",[2007],"[""Appl. Phys. Lett.""]","[""J. H. Kim, D. S. Kil, S. J. Yeom, J. S. Roh, N. J. Kwak, and J. W. Kim, Appl. Phys. Lett. 91, 052908 (2007).""]" +Pd,,,,,,,[],[],[],[],[],[],[] +,Pd(hfac)2,formalin,Al2O3,,200,1702,[1702],"[""""]","[""Direct plating of Cu on Pd plasma enhanced atomic layer deposition coated TaN barrier""]","[[""Lay, N. E."",""Eyck, G. A. T."",""Duquette, D. J."",""Lu, T. M.""]]",[2007],"[""Electrochem. Solid-State Lett.""]","[""N. E. Lay, G. A. T. Eyck, D. J. Duquette, and T. M. Lu, Electrochem. Solid-State Lett. 10, D13 (2007).""]" +,Pd(hfac)2,H2,"Ir, TaN",,80–130,1696 and 1697,"[1696,1697]","[""10.1149/1.1940507"",""10.1149/1.3190157""]","[""ALD of Rhodium Thin Films from Rh(acac) _3 and Oxygen"",""Study on Atomic Layer Deposition of Amorphous Rhodium Oxide Thin Films""]","[[""Titta Aaltonen"",""Mikko Ritala"",""Markku Leskel a""],[""H am al ainen, Jani"",""Munnik, Frans"",""Ritala, Mikko"",""Leskel a, Markku""]]","[2005,2009]","[""Electrochem. Solid-State Lett."",""J. Electrochem. Soc.""]","[""T. Aaltonen, M. Ritala, and M. Leskel€a, Electrochem. Solid-State Lett. 8, C99 (2005)."",""J. H€am€al€ainen, F. Munnik, M. Ritala, and M. Leskel€a, J. Electrochem. Soc. 156, D418 (2009).""]" +,Pd(hfac)2,HCOCOOH,tetrasulfide SAM,,200,1696,[1696],"[""10.1149/1.1940507""]","[""ALD of Rhodium Thin Films from Rh(acac) _3 and Oxygen""]","[[""Titta Aaltonen"",""Mikko Ritala"",""Markku Leskel a""]]",[2005],"[""Electrochem. Solid-State Lett.""]","[""T. Aaltonen, M. Ritala, and M. Leskel€a, Electrochem. Solid-State Lett. 8, C99 (2005).""]" +,Pd(thd)2,H2,"Al2O3, SiO2",,180,1684,[1684],"[""10.1021/cm903793u""]","[""Atomic Layer Deposition of Ru/RuO2 Thin Films Studied by In situ Infrared Spectroscopy""]","[[""Park, S. K."",""Kanjolia, R."",""Anthis, J."",""Odedra, R."",""Boag, N."",""Wielunski, L."",""Chabal, Y. J.""]]",[2010],"[""Chem. Mater.""]","[""S. K. Park, R. Kanjolia, J. Anthis, R. Odedra, N. Boag, L. Wielunski, and Y. J. Chabal, Chem. Mater. 22, 4867 (2010).""]" +,Pd(thd)2,H2⚡,"Ir, W, Si",80,,2375,[2375],"[""""]","[""Epitaxy of copper on alpha-Al2O3(001) by atomic layer deposition""]","[[""T orndahl, T."",""Lu, J."",""Ottosson, M."",""Carlsson, J. O.""]]",[2005],"[""J. Cryst. Growth""]","[""T. T€orndahl, J. Lu, M. Ottosson, and J. O. Carlsson, J. Cryst. Growth 276, 102 (2005).""]" +Ag,,,,,,,[],[],[],[],[],[],[] +,Ag(O2CtBu)(PEt3),H2⚡,"Si, glass",,140,1705,[1705],"[""""]","[""""]",[[]],[null],"[""""]","[""A. Niskanen, T. Hatanp€a€a, K. Arstila, M. Leskel€a, and M. Ritala, Chem. Vap. Deposition 13, 408 (2007).""]" +,Ag(hfac)(cod),propanol,glass,,110–150,1811,[1811],"[""10.1021/jp105852h""]","[""Non-Aqueous Approach to Synthesize Amorphous/Crystalline Metal Oxide-Graphene Nanosheet Hybrid Composites""]","[[""Meng, Xiangbo"",""Geng, Dongsheng"",""Liu, Jian"",""Banis, Mohammad Norouzi"",""Zhang, Yong"",""Li, Ruying"",""Sun, Xueliang""]]",[2010],"[""J. Phys. Chem. C""]","[""X. Meng, D. Geng, J. Liu, M. N. Banis, Y. Zhang, R. Li, and X. Sun, J. Phys. Chem. C 114, 18330 (2010).""]" +Sb,,,,,,,[],[],[],[],[],[],[] +,SbCl3,(Et3Si)3Sb,"Si, SLG",,95–250,534,[534],"[""""]","[""Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates""]","[[""S. Hirose"",""A. Yoshida"",""M. Yamaura"",""N. Kano"",""H. Munekata""]]",[2000],"[""J. Mater. Sci.: Mater. Electron.""]","[""S. Hirose, A. Yoshida, M. Yamaura, N. Kano, and H. Munekata, J. Mater. Sci.: Mater. Electron. 11, 7 (2000).""]" +Ta,,,,,,,[],[],[],[],[],[],[] +,TaCl5,H2⚡,"Si, SiO2",25–400,400,"685, 2124, and 2165","[685,2124,2165]","[""10.1016/j.apsusc.2009.04.184"","""",""""]","[""Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy"",""Highly conformal hafnium silicate film growth by atomic-layer chemical vapor deposition using a new combination of precursors: Hf(OC(CH3)(3))(4) and Si(N(CH3)(C2H5))(4)"",""Growth of cubic- TaN thin films by plasma-enhanced atomic layer deposition""]","[[""Hardy, A."",""Adelmann, C."",""Van Elshocht, S."",""Van den Rul, H."",""Van Bael, M. K."",""De Gendt, S."",""D'Olieslaeger, M."",""Heyns, M."",""Kittl, J. A."",""Mullens, J.""],[""Kim, J."",""Yong, K.""],[""H. Kim"",""A. J. Kellock"",""S. M. Rossnagel""]]","[2009,2006,2002]","[""Appl. Surf. Sci."",""Jpn. J. Appl. Phys."",""J. Appl. Phys.""]","[""A. Hardy, C. Adelmann, S. Van Elshocht, H. Van den Rul, M. K. Van Bael, S. De Gendt, M. D’Olieslaeger, M. Heyns, J. A. Kittl, and J. Mullens, Appl. Surf. Sci. 255, 7812 (2009)."",""J. Kim and K. Yong, Jpn. J. Appl. Phys., Part 1 45, 5174 (2006)."",""H. Kim, A. J. Kellock, and S. M. Rossnagel, J. Appl. Phys. 92, 7080 (2002).""]" +,TaF5,H2⚡,SiO2,,200–350,2125–2127,"[2125,2126,2127]","["""","""",""10.1149/1.3223989""]","[""Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties"",""A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films"",""Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier""]","[[""H. Kim"",""S. M. Rossnagel""],[""Kwon, J. D."",""Park, J. S."",""Lee, H. C."",""Kang, S. W.""],[""Kwon, Jung-Dae"",""Jeong, Seong-Jun"",""Kang, Jae-Wook"",""Kim, Do-Geun"",""Kim, Jong-Kuk"",""Rha, Jong-Joo"",""Nam, Kee-Seok"",""Kwon, Se-Hun""]]","[2003,2006,2009]","[""Thin Solid Films"",""Electrochem. Solid-State Lett."",""J. 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Sci. 162–163, 479 (2000).""]" +,WF6,Si2H6,Al2O3,,122–177,187 and 309,"[187,309]","["""",""10.1063/1.3103254""]","[""Optimization and structural characterization of W/Al2O3 nanolaminates grown using atomic layer deposition techniques"",""Nucleation period, surface roughness, and oscillations in mass gain per cycle during W atomic layer deposition on Al2O3""]","[[""Sechrist, Z. A."",""Fabreguette, F. H."",""Heintz, O."",""Phung, T. M."",""Johnson, D. C."",""George, S. M.""],[""Wind, R. W."",""Fabreguette, F. H."",""Sechrist, Z. A."",""George, S. M.""]]","[2005,2009]","[""Chem. Mater."",""J. Appl. Phys.""]","[""Z. A. Sechrist, F. H. Fabreguette, O. Heintz, T. M. Phung, D. C. Johnson, and S. M. George, Chem. Mater. 17, 3475 (2005)."",""R. W. Wind, F. H. Fabreguette, Z. A. Sechrist, and S. M. George, J. Appl. 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Solid-State Lett. 8, C155 (2005).""]" +,WF6,B2H6,TiN,300,,2202,[2202],"[""""]","[""Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4""]","[[""Kim, S. H."",""Hwang, E. S."",""Kim, B. M."",""Lee, J. W."",""Sun, H. J."",""Hong, T. E."",""Kim, J. K."",""Sohn, H."",""Kim, J."",""Yoon, T. S.""]]",[2005],"[""Electrochem. Solid-State Lett.""]","[""S. H. Kim, E. S. Hwang, B. M. Kim, J. W. Lee, H. J. Sun, T. E. Hong, J. K. Kim, H. Sohn, J. Kim, and T. S. Yoon, Electrochem. 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Solid-State Lett. 11, H303 (2008).""]" +,Ir(EtCp)(cod),NH3⚡,TiN,,270,2249,[2249],"[""""]","[""""]",[[]],[null],"[""""]","[""S.-W. Kim, S.-H. Kwon, S.-J. Jeong, J.-S. Park, and S.-W. Kang, Electrochem. Solid-State Lett. 11, H303 (2008).""]" +,Ir(MeCp)(chd),O2,Al2O3,,225–350,2250,[2250],"[""""]","[""Phase control of iridium and iridium oxide thin films in atomic layer deposition""]","[[""Kim, S. W."",""Kwon, S. H."",""Kwak, D. K."",""Kang, S. W.""]]",[2008],"[""J. Appl. Phys.""]","[""S. W. Kim, S. H. Kwon, D. K. Kwak, and S. W. Kang, J. Appl. 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Solid- State Lett. 12, G34 (2009)."",""S. Novak, B. Lee, X. Yang, and V. Misra, J. Electrochem. Soc. 157, H589 (2010).""]" +,Pt(MeCp)Me3,O2⚡,"Si, SiO2",,300,2260,[2260],"[""""]","[""Ultralow Loading Pt Nanocatalysts Prepared by Atomic Layer Deposition on Carbon Aerogels""]","[[""King, Jeffrey S."",""Wittstock, Arne"",""Biener, Juergen"",""Kucheyev, Sergei O."",""Wang, Yinmin M."",""Baumann, Theodore F."",""Giri, Sandeep K."",""Hamza, Alex V."",""Baeumer, Marcus"",""Bent, Stacey F.""]]",[2008],"[""Nano Lett.""]","[""J. S. King, A. Wittstock, J. Biener, S. O. Kucheyev, Y. M. Wang, T. F. Baumann, S. K. Giri, A. V. Hamza, M. Baeumer, and S. F. Bent, Nano Lett. 8, 2405 (2008).""]" +,Pt(acac)Me2,O3,Al2O3,,140–200,2273,[2273],"[""10.1149/1.3491376""]","[""Area Selective Atomic Layer Deposition by Microcontact Printing with a Water-Soluble Polymer""]","[[""Mullings, Marja N."",""Lee, Han-Bo-Ram"",""Marchack, Nathan"",""Jiang, Xirong"",""Chen, Zhebo"",""Gorlin, Yelena"",""Lin, Kuang-Po"",""Bent, Stacey F.""]]",[2010],"[""J. Electrochem. Soc.""]","[""M. N. Mullings, H. -B.-R. Lee, N. Marchack, X. Jiang, Z. Chen, Y. Gorlin, K.-P. Lin, and S. F. Bent, J. Electrochem. Soc. 157, D600 (2010).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_061_table_042/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_061_table_042/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..b35839b0feac550b58c7c47995938309b7c051fc --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_061_table_042/gold.csv @@ -0,0 +1,50 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +Phosphides,,,,,,,[],[],[],[],[],[],[] +GaP,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,GaMe3,PH3,"GaPe, GaAse",,500,1394,[1394],"[""""]","[""(GaAs) _m (GaP) _n low dimensional short-period superlattice fabricated by atomic layer epitaxy""]","[[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano""]]",[1998],"[""Microelectron. Eng.""]","[""H. Isshiki, Y. Aoyagi, and T. Sugano, Microelectron. Eng. 43/44, 301 (1998).""]" +,GaMe3,PH3,Sie,,450–600,516 and 1392,"[516,1392]","["""",""""]","[""Atomic layer epitaxy of AlAs using thermally decomposed gas molecules"",""ORDERED GaInP BY ATOMIC LAYER EPITAXY""]","[[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""],[""B. T. McDermott"",""N. A. El-Masry"",""B. L. Jiang"",""F. Hyuga"",""S. M. Bedair"",""W. M. Duncan""]]","[1992,1991]","[""Appl. Phys. Lett."",""J. Cryst. Growth""]","[""S. Yokoyama, M. Shinohara, and N. Inoue, Appl. Phys. Lett. 60, 377 (1992)."",""B. T. McDermott, N. A. El-Masry, B. L. Jiang, F. Hyuga, S. M. Bedair, and W. M. Duncan, J. Cryst. Growth 107, 96 (1991).""]" +,GaMe3,P(NMe2)3,SiO2,,450,1395,[1395],"[""""]","[""A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy""]","[[""Ozeki, M."",""Haraguchi, T."",""Takeuchi, T."",""Maeda, K.""]]",[2005],"[""J. Cryst. Growth""]","[""M. Ozeki, T. Haraguchi, T. Takeuchi, and K. Maeda, J. Cryst. Growth 276, 374 (2005).""]" +InP,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,InMe3,PH3,GaAse,,420–580,1773,[1773],"[""10.1021/jp9086943""]","[""In2S3 Atomic Layer Deposition and Its Application as a Sensitizer on TiO2 Nanotube Arrays for Solar Energy Conversion""]","[[""Sarkar, Shaibal K."",""Kim, Jin Young"",""Goldstein, David N."",""Neale, Nathan R."",""Zhu, Kai"",""Elliot, C. Michael"",""Frank, Arthur J."",""George, Steven M.""]]",[2010],"[""J. Phys. Chem. C""]","[""S. K. Sarkar, J. Y. Kim, D. N. Goldstein, N. R. Neale, K. Zhu, C. M. Elliot, A. J. Frank, and S. M. George, J. Phys. Chem. C 114, 8032 (2010).""]" +,InMe3,PH3,InPe,,350–360,1775 and 1776,"[1775,1776]","["""",""""]","[""ATOMIC LAYER EPITAXY OF InP"",""High-resolution x-ray diffraction to determine the self-limiting growth in atomic layer epitaxy of InP and InAs/InP heterostructures""]","[[""D. Bertone""],[""C. A. Tran"",""R. A. Masut"",""J. L. Brebner"",""R. Leonelli""]]","[1992,1993]","[""J. Electron. Mater."",""Appl. Phys. Lett.""]","[""D. Bertone, J. Electron. Mater. 21, 265 (1992)."",""C. A. Tran, R. A. Masut, J. L. Brebner, and R. Leonelli, Appl. Phys. Lett. 62, 2375 (1993).""]" +Arsenides,,,,,,,[],[],[],[],[],[],[] +AlAs,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,AlMe3,AsH3,H-Sie,,500,513,[513],"[""""]","[""Atomic layer epitaxy of AlAs and AlGaAs""]","[[""T. Meguro"",""S. Iwai"",""Y. Aoyagi"",""K. Ozaki"",""Y. Yamamoto"",""T. Suzuki"",""Y. Okano"",""A. Hirata""]]",[1990],"[""J. Cryst. Growth""]","[""T. Meguro, S. Iwai, Y. Aoyagi, K. Ozaki, Y. Yamamoto, T. Suzuki, Y. Okano, and A. Hirata, J. Cryst. Growth 99, 540 (1990).""]" +,AlMe2H,AsH3,GaAse,,470,520,[520],"[""""]","[""ATOMIC LAYER EPITAXY OF ALAS AND (ALAS)N(GAAS)N SUPERLATTICES USING DIMETHYLALUMINUMHYDRIDE AS THE AL SOURCE""]","[[""M. Ishizaki"",""N. Kano"",""J. Yoshino"",""H. Kukimoto""]]",[1991],"[""Jpn. J. Appl. Phys., Part 2""]","[""M. Ishizaki, N. Kano, J. Yoshino, and H. Kukimoto, Jpn. J. Appl. Phys., Part 2 30, L435 (1991).""]" +,AlMe2H,AsH3-NMe2H,GaAse,,460,522,[522],"[""""]","[""Surface processes of selective growth by atomic layer epitaxy""]","[[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano"",""S. Iwai"",""T. Meguro""]]",[1994],"[""Appl. Surf. Sci.""]","[""H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai, and T. Meguro, Appl. Surf. Sci. 82/83, 57 (1994).""]" +,AlMe3,AsH3,H-Sie,,500,516 and 1426,"[516,1426]","["""",""""]","[""Atomic layer epitaxy of AlAs using thermally decomposed gas molecules"",""Sidewall growth by atomic layer epitaxy""]","[[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""],[""Y. Ide"",""B. T. McDermott"",""M. Hashemi"",""S. M. Bedair"",""W. D. Goodhue""]]","[1992,1988]","[""Appl. Phys. Lett."",""Appl. Phys. Lett.""]","[""S. Yokoyama, M. Shinohara, and N. Inoue, Appl. Phys. Lett. 60, 377 (1992)."",""Y. Ide, B. T. McDermott, M. Hashemi, S. M. Bedair, and W. D. Goodhue, Appl. Phys. Lett. 53, 2314 (1988).""]" +,AlMe3,AsH3,Ase,,500–850,516,[516],"[""""]","[""Atomic layer epitaxy of AlAs using thermally decomposed gas molecules""]","[[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""]]",[1992],"[""Appl. Phys. Lett.""]","[""S. Yokoyama, M. Shinohara, and N. Inoue, Appl. Phys. Lett. 60, 377 (1992).""]" +,(Me3N)·AlH3,As(NMe2)3,GaAse,,310–400,527,[527],"[""""]","[""Atomic layer epitaxy of AlAs using trimethylamine-alane and amino- As""]","[[""K. Fujii"",""I. Suemune"",""M. Yamanishi""]]",[1993],"[""Appl. Phys. Lett.""]","[""K. Fujii, I. Suemune, and M. Yamanishi, Appl. Phys. Lett. 62, 1420 (1993).""]" +,(Me3N)·AlH3,AsH3,"As-Si, GaAse",,150,525,[525],"[""""]","[""Real-time optical diagnostics for measuring and controlling epitaxial growth""]","[[""D. E. Aspnes"",""I. Kamiya"",""H. Tanaka"",""R. Bhat"",""L. T. Florez"",""J. P. Harbison"",""W. E. Quinn"",""M. Tamargo"",""S. Gregory"",""M. A. A. Pudensi"",""S. A. Schwarz"",""M. J. S. P. Brasil"",""R. E. Nahory""]]",[1993],"[""Thin Solid Films""]","[""D. E. Aspnes, I. Kamiya, H. Tanaka, R. Bhat, L. T. Florez, J. P. Harbison, W. E. Quinn, M. Tamargo, S. Gregory, M. A. A. Pudensi, S. A. Schwarz, M. J. S. P. Brasil, and R. E. Nahory, Thin Solid Films 225, 26 (1993).""]" +,(Me2EtN)·AlH3,AsH3,GaAse,,250–650,528–532,"[528,529,530,531,532]","["""","""","""","""",""""]","[""Role of a metalorganic As source in atomic layer epitaxy of GaAs and AlAs"",""Atomic Layer Epitaxy of AlAs Using Dimethylethylamine Alane"",""ATOMIC LAYER EPITAXY OF AlAs USING ETHYLDIMETHYLAMINE ALANE AS A NEW ALUMINUM SOURCE"",""AlAs layers with low carbon content grown by ALE using ethyldimethylamine alane as a new aluminum source"",""Atomic layer epitaxy of AlAs and (AlAs) _n (GaAs) _n superlattices with a new aluminum source ethyldimethylamine alane""]","[[""I. Suemune""],[""M. Nagano"",""S. Iwai"",""K. Nemoto"",""Y. Aoyagi""],[""N. Kano"",""S. Hirose"",""K. Hara"",""J. Yoshino"",""H. Munekata"",""H. Kukimoto""],[""N. Kano"",""S. Hirose"",""K. Hara"",""J. Yoshino"",""H. Munekata"",""H. Kukimoto""],[""S. Hirose"",""N. Kano"",""K. Hara"",""H. Munekata"",""H. Kukimoto""]]","[1994,1994,1994,1994,1997]","[""Appl. Surf. Sci."",""Jpn. J. Appl. Phys., Part 2"",""Appl. Phys. Lett."",""Appl. Surf. Sci."",""J. Cryst. Growth""]","[""I. Suemune, Appl. Surf. Sci. 82/83, 149 (1994)."",""M. Nagano, S. Iwai, K. Nemoto, and Y. Aoyagi, Jpn. J. Appl. Phys., Part 2 33, L1289 (1994)."",""N. Kano, S. Hirose, K. Hara, J. Yoshino, H. Munekata, and H. Kukimoto, Appl. Phys. Lett. 65, 1115 (1994)."",""N. Kano, S. Hirose, K. Hara, J. Yoshino, H. Munekata, and H. Kukimoto, Appl. Surf. Sci. 82/83, 132 (1994)."",""S. Hirose, N. Kano, K. Hara, H. Munekata, and H. Kukimoto, J. Cryst. Growth 172, 13 (1997).""]" +MnAs,,,,Amorphous,Hexagonal,,[],[],[],[],[],[],[] +,Mn(CpMe)2,As(NMe2)3,GaAse,,350–500,1052,[1052],"[""10.1016/j.jcrysgro.2006.10.120""]","[""Atomic layer epitaxy of MnAs on GaAs(001)""]","[[""Ozeki, M."",""Haraguchi, T."",""Fujita, A.""]]",[2007],"[""J. Cryst. Growth""]","[""M. Ozeki, T. Haraguchi, and A. Fujita, J. Cryst. Growth 298, 90 (2007).""]" +GaAs,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,Ga+HCl,AsH3,GaAse,,350–550,"1397, 1399, and 1411","[1397,1399,1411]","["""","""",""""]","[""Laser-assisted atomic layer epitaxy of GaP in chemical beam epitaxy"",""Solid composition of In _ 1-x Ga _x As grown by halogen transport atomic layer epitaxy"",""In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy""]","[[""M. Yoshimoto"",""A. Kajimoto"",""H. Matsunami""],[""A. Koukitu"",""H. Nakai"",""A. Saegusa"",""T. Suzuki"",""O. Nomura"",""H. Seki""],[""A. Koukitu"",""N. Takahashi"",""H. Seki""]]","[1993,1988,1996]","[""Thin Solid Films"",""Jpn. J. Appl. Phys., Part 2"",""J. Cryst. Growth""]","[""M. Yoshimoto, A. Kajimoto, and H. Matsunami, Thin Solid Films 225, 70 (1993)."",""A. Koukitu, H. Nakai, A. Saegusa, T. Suzuki, O. Nomura, and H. Seki, Jpn. J. Appl. Phys., Part 2 27, L744 (1988)."",""A. Koukitu, N. Takahashi, and H. Seki, J. Cryst. Growth 163, 180 (1996).""]" +,GaCl3,AsH3,GaAse,,300–450,1413 and 1414,"[1413,1414]","["""",""""]","[""Atomic Layer Epitaxy of GaAs Using GaCl _3 and AsH _3"",""EPITAXIAL-GROWTH OF GaAs AT ONE TO 2 MONOLAYERS PER CYCLE BY ALTERNATE SUPPLY OF GaCl _3 AND AsH _3""]","[[""Y. Jin"",""R. Kobayashi"",""K. Fujii"",""F. Hasegawa""],[""K. Ishikawa"",""R. Kobayashi"",""S. Narahara"",""F. Hasegawa""]]","[1990,1992]","[""Jpn. J. Appl. Phys., Part 1"",""Jpn. J. Appl. Phys., Part 1""]","[""Y. Jin, R. Kobayashi, K. Fujii, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 29, L1350 (1990)."",""K. Ishikawa, R. Kobayashi, S. Narahara, and F. Hasegawa, Jpn. J. Appl. Phys., Part 1 31, 1716 (1992).""]" +,GaCl3,AsH3,GaAs,,200–250,1413 and 1414,"[1413,1414]","["""",""""]","[""Atomic Layer Epitaxy of GaAs Using GaCl _3 and AsH _3"",""EPITAXIAL-GROWTH OF GaAs AT ONE TO 2 MONOLAYERS PER CYCLE BY ALTERNATE SUPPLY OF GaCl _3 AND AsH _3""]","[[""Y. Jin"",""R. Kobayashi"",""K. Fujii"",""F. Hasegawa""],[""K. Ishikawa"",""R. Kobayashi"",""S. Narahara"",""F. Hasegawa""]]","[1990,1992]","[""Jpn. J. Appl. Phys., Part 1"",""Jpn. J. Appl. Phys., Part 1""]","[""Y. Jin, R. Kobayashi, K. Fujii, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 29, L1350 (1990)."",""K. Ishikawa, R. Kobayashi, S. Narahara, and F. Hasegawa, Jpn. J. Appl. Phys., Part 1 31, 1716 (1992).""]" +,GaMe3,AsH3,GaAse,,450–700,"1417, 1420, 1433, and 1438","[1417,1420,1433,1438]","["""","""","""",""""]","[""Atomic layer epitaxy of GaAs using GaBr and GaI sources"",""Growth and characterization of compound semiconductors by atomic layer epitaxy"",""Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)"",""Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy""]","[[""T. Taki"",""A. Koukitu""],[""M. A. Tischler"",""S. M. Bedair""],[""M. L. Yu"",""U. Memmert"",""T. F. Kuech""],[""J. R. Creighton"",""K. R. Lykke"",""V. A. Shamamian"",""B. D. Kay""]]","[1997,1986,1989,1990]","[""Appl. Surf. Sci."",""J. Cryst. Growth"",""Appl. Phys. Lett."",""Appl. Phys. Lett.""]","[""T. Taki and A. Koukitu, Appl. Surf. Sci. 112, 127 (1997)."",""M. A. Tischler and S. M. Bedair, J. Cryst. Growth 77, 89 (1986)."",""M. L. Yu, U. Memmert, and T. F. Kuech, Appl. Phys. Lett. 55, 1011 (1989)."",""J. R. Creighton, K. R. Lykke, V. A. Shamamian, and B. D. Kay, Appl. Phys. Lett. 57, 279 (1990).""]" +,GaMe3,AsH3,silica,,400,1467,[1467],"[""""]","[""Nucleation and surface roughness in self-limiting monolayer epitaxy of GaAs""]","[[""K. Kono"",""T. Kurabayashi"",""J. Nishizawa"",""M. Esashi""]]",[2000],"[""Jpn. J. Appl. Phys., Part 1""]","[""K. Kono, T. Kurabayashi, J. Nishizawa, and M. Esashi, Jpn. J. Appl. Phys., Part 1 39, 5737 (2000).""]" +,GaMe3,AsH3,H-Si,,500,"516, 1426, 1439, and 1463","[516,1426,1439,1463]","["""","""","""",""""]","[""Atomic layer epitaxy of AlAs using thermally decomposed gas molecules"",""Sidewall growth by atomic layer epitaxy"",""Atomic layer epitaxy of GaAs by chemical beam epitaxy"",""Self limiting growth on nominally oriented (111) A GaAs substrates in atomic layer epitaxy""]","[[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""],[""Y. Ide"",""B. T. McDermott"",""M. Hashemi"",""S. M. Bedair"",""W. D. Goodhue""],[""T. H. Chiu"",""J. E. Cunningham"",""Robertson, Jr., A."",""D. L. Malm""],[""J.-S. Lee"",""S. Iwai"",""H. Isshiki"",""T. Meguro"",""T. Sugano"",""Y. Aoyagi""]]","[1992,1988,1990,1996]","[""Appl. Phys. Lett."",""Appl. Phys. Lett."",""J. Cryst. Growth"",""Appl. Surf. Sci.""]","[""S. Yokoyama, M. Shinohara, and N. Inoue, Appl. Phys. Lett. 60, 377 (1992)."",""Y. Ide, B. T. McDermott, M. Hashemi, S. M. Bedair, and W. D. Goodhue, Appl. Phys. Lett. 53, 2314 (1988)."",""T. H. Chiu, J. E. Cunningham, A. Robertson, Jr., and D. L. Malm, J. Cryst. Growth 105, 155 (1990)."",""J.-S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano, and Y. Aoyagi, Appl. Surf. Sci. 103, 275 (1996).""]" +,GaMe3,AsH3,InAse,,500,1394,[1394],"[""""]","[""(GaAs) _m (GaP) _n low dimensional short-period superlattice fabricated by atomic layer epitaxy""]","[[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano""]]",[1998],"[""Microelectron. Eng.""]","[""H. Isshiki, Y. Aoyagi, and T. Sugano, Microelectron. Eng. 43/44, 301 (1998).""]" +,GaMe3,AsH3-H2⚡,GaAs,,430–500,1441,[1441],"[""""]","[""THE MECHANISM OF ATOMIC LAYER EPITAXY OF GAAS USING TRIMETHYLGALLIUM AND ARSINE""]","[[""A. Watanabe"",""T. Kamijoh"",""M. Hata"",""T. Isu"",""Y. Katayama""]]",[1990],"[""Vacuum""]","[""A. Watanabe, T. Kamijoh, M. Hata, T. Isu, and Y. Katayama, Vacuum 41, 965 (1990).""]" +,GaMe3,AsH3,GaPe,,500,516,[516],"[""""]","[""Atomic layer epitaxy of AlAs using thermally decomposed gas molecules""]","[[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""]]",[1992],"[""Appl. Phys. Lett.""]","[""S. Yokoyama, M. Shinohara, and N. Inoue, Appl. Phys. Lett. 60, 377 (1992).""]" +,GaMe3,tBuAsH2,GaAse,,500–580,1470 and 1474,"[1470,1474]","["""",""""]","[""Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine"",""Real-time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs""]","[[""B. Y. Maa"",""P. D. Dapkus""],[""B. Y. Maa"",""P. D. Dapkus"",""P. Chen"",""A. Madhukar""]]","[1991,1993]","[""Appl. Phys. Lett."",""Appl. Phys. Lett.""]","[""B. Y. Maa and P. D. Dapkus, Appl. Phys. Lett. 58, 2261 (1991)."",""B. Y. Maa, P. D. Dapkus, P. Chen, and A. Madhukar, Appl. Phys. Lett. 62, 2551 (1993).""]" +,GaMe3,EtAsH2,GaAse,,500–540,1468,[1468],"[""""]","[""Photonic crystal thin films of GaAs prepared by atomic layer deposition""]","[[""Povey, I. M."",""Whitehead, D."",""Thomas, K."",""Pemble, M. E."",""Bardosova, M."",""Renard, J.""]]",[2006],"[""Appl. Phys. Lett.""]","[""I. M. Povey, D. Whitehead, K. Thomas, M. E. Pemble, M. Bardosova, and J. Renard, Appl. Phys. Lett. 89, 104103 (2006).""]" +,GaMe3,As,GaAse,,370–530,1434,[1434],"[""""]","[""DIRECT OBSERVATION OF GaAs ATOMIC LAYER EPITAXY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION""]","[[""T. H. Chiu""]]",[1989],"[""Appl. Phys. Lett.""]","[""T. H. Chiu, Appl. Phys. Lett. 55, 1244 (1989).""]" +,GaMe3☼,AsH3,GaAse,,370–430,514,[514],"[""""]","[""A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxy""]","[[""N. Ohtsuka"",""K. Kitahara"",""M. Ozeki"",""K. Kodama""]]",[1990],"[""J. Cryst. Growth""]","[""N. Ohtsuka, K. Kitahara, M. Ozeki, and K. Kodama, J. Cryst. Growth 99, 346 (1990).""]" +,GaEt3,AsH3,GaAse,,385,1438,[1438],"[""""]","[""Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy""]","[[""J. R. Creighton"",""K. R. Lykke"",""V. A. Shamamian"",""B. D. Kay""]]",[1990],"[""Appl. Phys. Lett.""]","[""J. R. Creighton, K. R. Lykke, V. A. Shamamian, and B. D. Kay, Appl. Phys. Lett. 57, 279 (1990).""]" +,GaEt3,tBuAsH2,GaAse,,550,1486,[1486],"[""""]","[""Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions""]","[[""T. Ohno"",""Y. Oyama"",""K. Saito"",""K. Suto"",""J. Nishizawa""]]",[2004],"[""Thin Solid Films""]","[""T. Ohno, Y. Oyama, K. Saito, K. Suto, and J. Nishizawa, Thin Solid Films 464/465, 123 (2004).""]" +,GaEt3,As(NMe2)3,GaAse,,440–495,527,[527],"[""""]","[""Atomic layer epitaxy of AlAs using trimethylamine-alane and amino- As""]","[[""K. Fujii"",""I. Suemune"",""M. Yamanishi""]]",[1993],"[""Appl. Phys. Lett.""]","[""K. Fujii, I. Suemune, and M. Yamanishi, Appl. Phys. Lett. 62, 1420 (1993).""]" +,GaEt3☼,AsH3,GaAse,,370–430,514,[514],"[""""]","[""A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxy""]","[[""N. Ohtsuka"",""K. Kitahara"",""M. Ozeki"",""K. Kodama""]]",[1990],"[""J. Cryst. Growth""]","[""N. Ohtsuka, K. Kitahara, M. Ozeki, and K. Kodama, J. Cryst. Growth 99, 346 (1990).""]" +,GaEt2Cl,AsH3,GaAse,,450–525,1490,[1490],"[""""]","[""Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl""]","[[""C. Sasaoka"",""M. Yoshida"",""A. Usui""]]",[1988],"[""Jpn. J. Appl. Phys., Part 2""]","[""C. Sasaoka, M. Yoshida, and A. Usui, Jpn. J. Appl. Phys., Part 2 27, L490 (1988).""]" +,Ga(C5H11)3,tBuAsH2,GaAse,,430–500,1491,[1491],"[""""]","[""GaAs growth by atomic layer epitaxy using diethylgalliumchloride""]","[[""K. Mori"",""M. Yoshida"",""A. Usui"",""H. Terao""]]",[1988],"[""Appl. Phys. Lett.""]","[""K. Mori, M. Yoshida, A. Usui, and H. Terao, Appl. Phys. Lett. 52, 27 (1988).""]" +InAs,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,In+HCl,AsH3,GaAse,,350–550,1399 and 1411,"[1399,1411]","["""",""""]","[""Solid composition of In _ 1-x Ga _x As grown by halogen transport atomic layer epitaxy"",""In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy""]","[[""A. Koukitu"",""H. Nakai"",""A. Saegusa"",""T. Suzuki"",""O. Nomura"",""H. Seki""],[""A. Koukitu"",""N. Takahashi"",""H. Seki""]]","[1988,1996]","[""Jpn. J. Appl. Phys., Part 2"",""J. Cryst. Growth""]","[""A. Koukitu, H. Nakai, A. Saegusa, T. Suzuki, O. Nomura, and H. Seki, Jpn. J. Appl. Phys., Part 2 27, L744 (1988)."",""A. Koukitu, N. Takahashi, and H. Seki, J. Cryst. Growth 163, 180 (1996).""]" +,InMe3,tBuAsH2,InPe,,350–410,"1775, 1776, 1788, and 1789","[1775,1776,1788,1789]","["""","""","""",""""]","[""ATOMIC LAYER EPITAXY OF InP"",""High-resolution x-ray diffraction to determine the self-limiting growth in atomic layer epitaxy of InP and InAs/InP heterostructures"",""SELF-LIMITED GROWTH OF InAs AT 480 ^irc C"",""Atomic layer epitaxy of InAs using tertiarybutylarsine""]","[[""D. Bertone""],[""C. A. Tran"",""R. A. Masut"",""J. L. Brebner"",""R. Leonelli""],[""D. Jung"",""S. M. Bedair""],[""C. A. Tran"",""R. Ares"",""S. P. Watkins"",""G. Soerensen"",""Y. Lacroix""]]","[1992,1993,1994,1995]","[""J. Electron. Mater."",""Appl. Phys. Lett."",""J. Mater. Res."",""J. Electron. Mater.""]","[""D. Bertone, J. Electron. Mater. 21, 265 (1992)."",""C. A. Tran, R. A. Masut, J. L. Brebner, and R. Leonelli, Appl. Phys. Lett. 62, 2375 (1993)."",""D. Jung and S. M. Bedair, J. Mater. Res. 9, 3022 (1994)."",""C. A. Tran, R. Ares, S. P. Watkins, G. Soerensen, and Y. Lacroix, J. Electron. Mater. 24, 1597 (1995).""]" +,InMe3,AsH3,InAse,,360–420,1394,[1394],"[""""]","[""(GaAs) _m (GaP) _n low dimensional short-period superlattice fabricated by atomic layer epitaxy""]","[[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano""]]",[1998],"[""Microelectron. Eng.""]","[""H. Isshiki, Y. Aoyagi, and T. Sugano, Microelectron. Eng. 43/44, 301 (1998).""]" +Antimonides,,,,,,,[],[],[],[],[],[],[] +AlSb,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,AlCl3,(Et3Si)3Sb,"Si, SLG",,300,534,[534],"[""""]","[""Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates""]","[[""S. Hirose"",""A. Yoshida"",""M. Yamaura"",""N. Kano"",""H. Munekata""]]",[2000],"[""J. Mater. Sci.: Mater. Electron.""]","[""S. Hirose, A. Yoshida, M. Yamaura, N. Kano, and H. Munekata, J. Mater. Sci.: Mater. Electron. 11, 7 (2000).""]" +GaSb,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,GaCl3,(Et3Si)3Sb,"Si, SLG",150,,534,[534],"[""""]","[""Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates""]","[[""S. Hirose"",""A. Yoshida"",""M. Yamaura"",""N. Kano"",""H. Munekata""]]",[2000],"[""J. Mater. Sci.: Mater. Electron.""]","[""S. Hirose, A. Yoshida, M. Yamaura, N. Kano, and H. Munekata, J. Mater. Sci.: Mater. Electron. 11, 7 (2000).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_062_table_043/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_062_table_043/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..4f1c0d3d3f8b7b76ab3560bfd06d5788614559a1 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_062_table_043/gold.csv @@ -0,0 +1,3 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +GeSb,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,GeCl2 · (C4H8O2)-SbCl3,(Et3Si)3Sb,"Si, SLG",95,,534,[534],"[""""]","[""Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates""]","[[""S. Hirose"",""A. Yoshida"",""M. Yamaura"",""N. Kano"",""H. Munekata""]]",[2000],"[""J. Mater. Sci.: Mater. Electron.""]","[""S. Hirose, A. Yoshida, M. Yamaura, N. Kano, and H. Munekata, J. Mater. Sci.: Mater. Electron. 11, 7 (2000).""]" diff --git a/Miikkulainen_2013/step7_resolved_tables/tables/page_062_table_044/gold.csv b/Miikkulainen_2013/step7_resolved_tables/tables/page_062_table_044/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..dee25e30536708e1f4ed8ed22fe3c0f8111fe365 --- /dev/null +++ b/Miikkulainen_2013/step7_resolved_tables/tables/page_062_table_044/gold.csv @@ -0,0 +1,15 @@ +Material,Reactant A,Reactant B,Substrate(s),Phases,,References,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +MgF2,,,,Amorphous,Tetragonal,,[],[],[],[],[],[],[] +,Mg(thd)2,TiF4,Si,,250–400,66 and 67,"[66,67]","["""",""""]","[""Study of a novel ALD process for depositing MgF2 thin films"",""Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films""]","[[""Pilvi, T."",""Hatanp a a, T."",""Puukilainen, E."",""Arstila, K."",""Bischoff, M."",""Kaiser, U."",""Kaiser, N."",""Leskel a, M."",""Ritala, M.""],[""Tero Pilvi"",""Mikko Ritala"",""Markku Leskela"",""Martin Bischoff"",""Ute Kaiser"",""Norbert Kaiser""]]","[2007,2008]","[""J. Mater. Chem."",""Appl. Opt.""]","[""T. Pilvi, T. Hatanp€a€a, E. Puukilainen, K. Arstila, M. Bischoff, U. Kaiser, N. Kaiser, M. Leskel€a, and M. Ritala, J. Mater. Chem. 17, 5077 (2007)."",""T. Pilvi, M. Ritala, M. Leskel€a, M. Bischoff, U. Kaiser, and N. Kaiser, Appl. Opt. 47, C271 (2008).""]" +CaF2,,,,Amorphous,Cubic,,[],[],[],[],[],[],[] +,Ca(thd)2,HF,Al2O3,,320,680,[680],"[""""]","[""AFM studies of polycrystalline calcium sulfide thin films grown by atomic layer deposition""]","[[""S. Dey"",""S. J. Yun""]]",[1999],"[""Appl. Surf. Sci.""]","[""S. Dey and S. J. Yun, Appl. Surf. Sci. 143, 191 (1999).""]" +,Ca(thd)2,TiF4,Si,,300–450,67 and 681,"[67,681]","["""",""""]","[""Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films"",""Metal fluoride thin films prepared by atomic layer deposition""]","[[""Tero Pilvi"",""Mikko Ritala"",""Markku Leskela"",""Martin Bischoff"",""Ute Kaiser"",""Norbert Kaiser""],[""M. Ylilammi"",""T. Ranta-aho""]]","[2008,1994]","[""Appl. Opt."",""J. Electrochem. Soc.""]","[""T. Pilvi, M. Ritala, M. Leskel€a, M. Bischoff, U. Kaiser, and N. Kaiser, Appl. Opt. 47, C271 (2008)."",""M. Ylilammi and T. Ranta-aho, J. Electrochem. Soc. 141, 1278 (1994).""]" +,Ca(thd)2,TaF5,Si,,225–400,68,[68],"[""""]","[""Atomic layer deposition of MgF2 thin films using TaF5 as a novel fluorine source""]","[[""Pilvi, T."",""Puukilainen, E."",""Kreissig, U."",""Leskel a, M."",""Ritala, M.""]]",[2008],"[""Chem. Mater.""]","[""T. Pilvi, E. Puukilainen, U. Kreissig, M. Leskel€a, and M. Ritala, Chem. Mater. 20, 5023 (2008).""]" +ZnF2,,,,Amorphous,Rutile,,[],[],[],[],[],[],[] +,Zn(CH3COO)2,HF,Al2O3,,300,680,[680],"[""""]","[""AFM studies of polycrystalline calcium sulfide thin films grown by atomic layer deposition""]","[[""S. Dey"",""S. J. Yun""]]",[1999],"[""Appl. Surf. Sci.""]","[""S. Dey and S. J. Yun, Appl. Surf. Sci. 143, 191 (1999).""]" +SrF2,,,,Amorphous,Rutile,,[],[],[],[],[],[],[] +,Sr(thd)2,HF,Al2O3,,350,680,[680],"[""""]","[""AFM studies of polycrystalline calcium sulfide thin films grown by atomic layer deposition""]","[[""S. Dey"",""S. J. Yun""]]",[1999],"[""Appl. Surf. Sci.""]","[""S. Dey and S. J. Yun, Appl. Surf. Sci. 143, 191 (1999).""]" +YF3,,,,Amorphous,Orthorhombic,,[],[],[],[],[],[],[] +,Y(thd)3,TiF4,Si,175–200,225–325,1534,[1534],"[""""]","[""Atomic layer deposition of Y2O3 thin films from yttrium tris(N,N'-diisopropylacetamidinate) and water""]","[[""de Rouffignac, P."",""Park, J. S."",""Gordon, R. G.""]]",[2005],"[""Chem. Mater.""]","[""P. de Rouffignac, J. S. Park, and R. G. Gordon, Chem. Mater. 17, 4808 (2005).""]" +LaF3,,,,Amorphous,Hexagonal,,[],[],[],[],[],[],[] +,La(thd)3,TiF4,Si,,225–250,1858,[1858],"[""""]","[""Deposition of lanthanum sulfide thin films by atomic layer epitaxy""]","[[""K. Kukli"",""H. Heikkinen"",""E. Nyk anen"",""L. Niinist o""]]",[1998],"[""J. Alloys Compd.""]","[""K. Kukli, H. Heikkinen, E. Nyk€anen, and L. Niinist€o, J. Alloys Compd. 275–277, 10 (1998).""]" diff --git a/Puurunen_2005/README.md b/Puurunen_2005/README.md new file mode 100644 index 0000000000000000000000000000000000000000..943ad9b5956ae7c0cd89d132d259663ba169e528 --- /dev/null +++ b/Puurunen_2005/README.md @@ -0,0 +1,28 @@ +# Puurunen (2005) + +Gold-standard data for: + +**Puurunen (2005)** — *Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process*. *Journal of Applied Physics*, 97(12), 121301. +DOI: [10.1063/1.1940727](https://doi.org/10.1063/1.1940727) + +## Reference-table representation + +The controlled gold covers **4 logical reference-bearing tables (Tables I–IV)**, represented as **13 pagewise reference-bearing tables**. + +For Step 3 classification, the gold set additionally includes **8 non-reference tables**, giving **13 positive and 8 negative examples**. Steps 5 and 7 operate only on the **13 reference-bearing tables**. + +## Gold-standard contents + +| Step | Gold data | Scope | +|---|---|---:| +| **Step 1 — Table localization** | `gold.json` plus canonical crops in `crops/` | **21 physical fragments**, including **13 reference-bearing fragments representing 4 logical reference tables** | +| **Step 2 — Table reconstruction** | `tables//gold.csv` — authoritative structured table content | **21 gold CSVs** | +| **Step 3 — Reference-table classification** | `gold.json` — gold classification for each curated table fragment | **13 positive / 8 negative** | +| **Step 4 — Bibliography extraction** | `gold.json` — ordered gold bibliography | **1,207 bibliography entries** | +| **Step 5 — Reference matching** | `gold.json` — citation-cell to bibliography-position links | **538 citation cells / 1,579 links** | +| **Step 6 — Scholarly reference resolution** | `gold.json` — source-derived scholarly identities | **996 scholarly-reference records** | +| **Step 7 — Resolved-table export** | `gold.json` plus `tables//gold.csv` — deterministic expected resolved tables | **13 resolved reference-bearing fragment CSVs** | + +The Step folders contain **gold-side quality targets only**. Recorded model +predictions and run-specific diagnostics belong in the separate Tabulus-Runs +release. \ No newline at end of file diff --git a/Puurunen_2005/step1_table_localization/crops/page_006_table_001.png b/Puurunen_2005/step1_table_localization/crops/page_006_table_001.png new file mode 100644 index 0000000000000000000000000000000000000000..e574cb6c97c4bb33e023de7d1de851f9af29304b --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_006_table_001.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:b1c5183223d36a8a3416c88443f951a6c5ef348070b3bb57564204c4c04ff734 +size 151934 diff --git a/Puurunen_2005/step1_table_localization/crops/page_007_table_002.png b/Puurunen_2005/step1_table_localization/crops/page_007_table_002.png new file mode 100644 index 0000000000000000000000000000000000000000..70900e6311fb22315f3cd1ce2a74d8a2439e2507 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_007_table_002.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:0c63272795547aa62ef206efba7cfc4e383a66eb8817dcb5d33367b7bc8f57b2 +size 69852 diff --git a/Puurunen_2005/step1_table_localization/crops/page_007_table_003.png b/Puurunen_2005/step1_table_localization/crops/page_007_table_003.png new file mode 100644 index 0000000000000000000000000000000000000000..562e80d79fe6f8f9f96ffd6976e66976ab729147 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_007_table_003.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:327f57d8518ac4f73e0e6703cde55be30153696273dc7081e6ae8986e4765d2b +size 30808 diff --git a/Puurunen_2005/step1_table_localization/crops/page_009_table_004.png b/Puurunen_2005/step1_table_localization/crops/page_009_table_004.png new file mode 100644 index 0000000000000000000000000000000000000000..59121593e9fb43137e43ec5435e9654416645040 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_009_table_004.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:0068bec4a345b60816fdf8b528af9297f739248a5d54cb0da03271e2a360565e +size 153310 diff --git a/Puurunen_2005/step1_table_localization/crops/page_010_table_005.png b/Puurunen_2005/step1_table_localization/crops/page_010_table_005.png new file mode 100644 index 0000000000000000000000000000000000000000..0339f21bc65a7704bb36ec3f1cc7f79ab4f9fd6d --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_010_table_005.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:db243f28538844b0210bcc7d74762a804d25a64e433f3c97e11d5da3a8ba3f3b +size 149071 diff --git a/Puurunen_2005/step1_table_localization/crops/page_011_table_006.png b/Puurunen_2005/step1_table_localization/crops/page_011_table_006.png new file mode 100644 index 0000000000000000000000000000000000000000..ddae08f25b49a9ef2d21bcab13c5214a194cbd40 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_011_table_006.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:34ec79ab86809e680c57a192a9c35997f482f9667fbeb9d49500126d0419b86b +size 150498 diff --git a/Puurunen_2005/step1_table_localization/crops/page_012_table_007.png b/Puurunen_2005/step1_table_localization/crops/page_012_table_007.png new file mode 100644 index 0000000000000000000000000000000000000000..940c02384c2a809dc1212b9b195df7731b9b515f --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_012_table_007.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:4973d3e1c1e67d6eac0a2de4d01801965a931e1ff1805e383936cc6fbdadab0b +size 143956 diff --git a/Puurunen_2005/step1_table_localization/crops/page_013_table_008.png b/Puurunen_2005/step1_table_localization/crops/page_013_table_008.png new file mode 100644 index 0000000000000000000000000000000000000000..0335a55a52473e5b68430a7286860566e5de73b5 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_013_table_008.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:74909a2d4bcba5923ac3526f117e12dc5a1e6337468c243e9d4d8e0cffb5a00a +size 153943 diff --git a/Puurunen_2005/step1_table_localization/crops/page_014_table_009.png b/Puurunen_2005/step1_table_localization/crops/page_014_table_009.png new file mode 100644 index 0000000000000000000000000000000000000000..93d92cd846994727dced19fc640201739145a788 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_014_table_009.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:01edadb947df441769799ea9a18986cab344abb5d1b873b4377efc9b8e7e8be3 +size 154916 diff --git a/Puurunen_2005/step1_table_localization/crops/page_015_table_010.png b/Puurunen_2005/step1_table_localization/crops/page_015_table_010.png new file mode 100644 index 0000000000000000000000000000000000000000..61e11161ac4b1568601fe0bc9a14eaabb0daca82 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_015_table_010.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:37a1e1034531183299521e18b110e355b09267d1c17d3dac2de2e5b946a849f1 +size 138746 diff --git a/Puurunen_2005/step1_table_localization/crops/page_016_table_011.png b/Puurunen_2005/step1_table_localization/crops/page_016_table_011.png new file mode 100644 index 0000000000000000000000000000000000000000..b7bdcf3b1e597f5bd910d07d27ff0e6c26b65e2a --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_016_table_011.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:50498703fecc75bb9902a06b7412d7f90d478e316f9e625926e85b0793562421 +size 153511 diff --git a/Puurunen_2005/step1_table_localization/crops/page_017_table_012.png b/Puurunen_2005/step1_table_localization/crops/page_017_table_012.png new file mode 100644 index 0000000000000000000000000000000000000000..974fcb8f62926fd0edfe0c173a9b6ae194975fd9 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_017_table_012.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:f593a11772aedcd4f99775f544a4296c11ca8e47fe1d702b1af2ee1dd71f557c +size 167315 diff --git a/Puurunen_2005/step1_table_localization/crops/page_018_table_013.png b/Puurunen_2005/step1_table_localization/crops/page_018_table_013.png new file mode 100644 index 0000000000000000000000000000000000000000..4afff6134353c0d429b3309224dc3d15a6240bc7 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_018_table_013.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:7aca8b6f63b19546f24efffbdecf826e460380789f70378709c6eba3760a77f9 +size 75805 diff --git a/Puurunen_2005/step1_table_localization/crops/page_020_table_014.png b/Puurunen_2005/step1_table_localization/crops/page_020_table_014.png new file mode 100644 index 0000000000000000000000000000000000000000..ba5720b3e05c6b7688e94d5d8ab532f935724824 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_020_table_014.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:a2e5e19d2d021912ed80aa65cafd2c790f69c1d1bf07c08abb3fe2aa666c70d1 +size 27382 diff --git a/Puurunen_2005/step1_table_localization/crops/page_021_table_015.png b/Puurunen_2005/step1_table_localization/crops/page_021_table_015.png new file mode 100644 index 0000000000000000000000000000000000000000..e871f451251cf662cd96f3b05a993b28cfe91edf --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_021_table_015.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:d88863fd2e2612c8c9d54e0f357aedd765a6e2e8bc0c7c0238de32707e5dd7ea +size 55522 diff --git a/Puurunen_2005/step1_table_localization/crops/page_021_table_016.png b/Puurunen_2005/step1_table_localization/crops/page_021_table_016.png new file mode 100644 index 0000000000000000000000000000000000000000..8e19a0832339c4fc2b7ae50cdf7eb307b24453e3 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_021_table_016.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:a69888cd591323f2bb7c767030e46e62211f40827065c148283bba895e5bf11f +size 50422 diff --git a/Puurunen_2005/step1_table_localization/crops/page_021_table_017.png b/Puurunen_2005/step1_table_localization/crops/page_021_table_017.png new file mode 100644 index 0000000000000000000000000000000000000000..b6950acc45e1db016ee11199f50063e4e1eb5fd4 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_021_table_017.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:165341741c47bd49864181d800d7c8c935246ddf350056914c35fe3e22d4b933 +size 25627 diff --git a/Puurunen_2005/step1_table_localization/crops/page_021_table_018.png b/Puurunen_2005/step1_table_localization/crops/page_021_table_018.png new file mode 100644 index 0000000000000000000000000000000000000000..e7f69e14800117a91346861c0a1673bd6f0680d1 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_021_table_018.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:53049dee6261250a106abb3958834f0ca938c0b0fdd1c82ddd40b6501dadf1d3 +size 37281 diff --git a/Puurunen_2005/step1_table_localization/crops/page_022_table_019.png b/Puurunen_2005/step1_table_localization/crops/page_022_table_019.png new file mode 100644 index 0000000000000000000000000000000000000000..67fa0dc6d323974b26a6a5a7191eb911db991f5f --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_022_table_019.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:d949a1e198c33ef0c25f36c4661b26b12938767b581df6fb5e1af4caa9d8dc1a +size 57270 diff --git a/Puurunen_2005/step1_table_localization/crops/page_022_table_020.png b/Puurunen_2005/step1_table_localization/crops/page_022_table_020.png new file mode 100644 index 0000000000000000000000000000000000000000..2e3d741717a0a70b7ac3fc922eb2bf0c495bede5 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_022_table_020.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:b50fe59d0ae2be8bb58e7604b7bb3c79f482aa7fc73813cb0dc86097cc76cc33 +size 48390 diff --git a/Puurunen_2005/step1_table_localization/crops/page_022_table_021.png b/Puurunen_2005/step1_table_localization/crops/page_022_table_021.png new file mode 100644 index 0000000000000000000000000000000000000000..95ce9c58cb344cd11a560146a49358dd0374da77 --- /dev/null +++ b/Puurunen_2005/step1_table_localization/crops/page_022_table_021.png @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:03174509737bc93399e8ab15d0ad3e2ff141a70357a1e77e98bafb548ac655e4 +size 23055 diff --git a/Puurunen_2005/step1_table_localization/gold.json b/Puurunen_2005/step1_table_localization/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..84a363ec8a6688b985fed7e05d964983d5b379bf --- /dev/null +++ b/Puurunen_2005/step1_table_localization/gold.json @@ -0,0 +1,284 @@ +{ + "schema_version": 1, + "task": "step1_table_localization", + "paper_id": "P252", + "public_id": "Puurunen_2005", + "gold_type": "controlled_gold", + "scope": "Curated physical table fragments used as the controlled reference-aware evaluation substrate.", + "table_count": 21, + "tables": [ + { + "table_id": "page_006_table_001", + "page": 6, + "table_number": 1, + "crop": "crops/page_006_table_001.png", + "annotation": { + "page_nr": 6, + "image": "tables/page_006_table_001/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_006_table_001", + "legacy_table_number": 1 + } + }, + { + "table_id": "page_007_table_002", + "page": 7, + "table_number": 2, + "crop": "crops/page_007_table_002.png", + "annotation": { + "page_nr": 7, + "image": "tables/page_007_table_002/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_007_table_002", + "legacy_table_number": 2 + } + }, + { + "table_id": "page_007_table_003", + "page": 7, + "table_number": 3, + "crop": "crops/page_007_table_003.png", + "annotation": { + "page_nr": 7, + "image": "tables/page_007_table_003/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_007_table_003", + "legacy_table_number": 3 + } + }, + { + "table_id": "page_009_table_004", + "page": 9, + "table_number": 4, + "crop": "crops/page_009_table_004.png", + "annotation": { + "page_nr": 9, + "image": "tables/page_009_table_004/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_009_table_004", + "legacy_table_number": 4 + } + }, + { + "table_id": "page_010_table_005", + "page": 10, + "table_number": 5, + "crop": "crops/page_010_table_005.png", + "annotation": { + "page_nr": 10, + "image": "tables/page_010_table_005/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_010_table_005", + "legacy_table_number": 5 + } + }, + { + "table_id": "page_011_table_006", + "page": 11, + "table_number": 6, + "crop": "crops/page_011_table_006.png", + "annotation": { + "page_nr": 11, + "image": "tables/page_011_table_006/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_011_table_006", + "legacy_table_number": 6 + } + }, + { + "table_id": "page_012_table_007", + "page": 12, + "table_number": 7, + "crop": "crops/page_012_table_007.png", + "annotation": { + "page_nr": 12, + "image": "tables/page_012_table_007/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_012_table_007", + "legacy_table_number": 7 + } + }, + { + "table_id": "page_013_table_008", + "page": 13, + "table_number": 8, + "crop": "crops/page_013_table_008.png", + "annotation": { + "page_nr": 13, + "image": "tables/page_013_table_008/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_013_table_008", + "legacy_table_number": 8 + } + }, + { + "table_id": "page_014_table_009", + "page": 14, + "table_number": 9, + "crop": "crops/page_014_table_009.png", + "annotation": { + "page_nr": 14, + "image": "tables/page_014_table_009/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_014_table_009", + "legacy_table_number": 9 + } + }, + { + "table_id": "page_015_table_010", + "page": 15, + "table_number": 10, + "crop": "crops/page_015_table_010.png", + "annotation": { + "page_nr": 15, + "image": "tables/page_015_table_010/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_015_table_010", + "legacy_table_number": 10 + } + }, + { + "table_id": "page_016_table_011", + "page": 16, + "table_number": 11, + "crop": "crops/page_016_table_011.png", + "annotation": { + "page_nr": 16, + "image": "tables/page_016_table_011/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_016_table_011", + "legacy_table_number": 11 + } + }, + { + "table_id": "page_017_table_012", + "page": 17, + "table_number": 12, + "crop": "crops/page_017_table_012.png", + "annotation": { + "page_nr": 17, + "image": "tables/page_017_table_012/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_017_table_012", + "legacy_table_number": 12 + } + }, + { + "table_id": "page_018_table_013", + "page": 18, + "table_number": 13, + "crop": "crops/page_018_table_013.png", + "annotation": { + "page_nr": 18, + "image": "tables/page_018_table_013/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_018_table_013", + "legacy_table_number": 13 + } + }, + { + "table_id": "page_020_table_014", + "page": 20, + "table_number": 14, + "crop": "crops/page_020_table_014.png", + "annotation": { + "page_nr": 20, + "image": "tables/page_020_table_014/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_020_table_014", + "legacy_table_number": 14 + } + }, + { + "table_id": "page_021_table_015", + "page": 21, + "table_number": 15, + "crop": "crops/page_021_table_015.png", + "annotation": { + "page_nr": 21, + "image": "tables/page_021_table_015/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_021_table_015", + "legacy_table_number": 15 + } + }, + { + "table_id": "page_021_table_016", + "page": 21, + "table_number": 16, + "crop": "crops/page_021_table_016.png", + "annotation": { + "page_nr": 21, + "image": "tables/page_021_table_016/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_021_table_016", + "legacy_table_number": 16 + } + }, + { + "table_id": "page_021_table_017", + "page": 21, + "table_number": 17, + "crop": "crops/page_021_table_017.png", + "annotation": { + "page_nr": 21, + "image": "tables/page_021_table_017/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_021_table_017", + "legacy_table_number": 17 + } + }, + { + "table_id": "page_021_table_018", + "page": 21, + "table_number": 18, + "crop": "crops/page_021_table_018.png", + "annotation": { + "page_nr": 21, + "image": "tables/page_021_table_018/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_021_table_018", + "legacy_table_number": 18 + } + }, + { + "table_id": "page_022_table_019", + "page": 22, + "table_number": 19, + "crop": "crops/page_022_table_019.png", + "annotation": { + "page_nr": 22, + "image": "tables/page_022_table_019/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_022_table_019", + "legacy_table_number": 19 + } + }, + { + "table_id": "page_022_table_020", + "page": 22, + "table_number": 20, + "crop": "crops/page_022_table_020.png", + "annotation": { + "page_nr": 22, + "image": "tables/page_022_table_020/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_022_table_020", + "legacy_table_number": 20 + } + }, + { + "table_id": "page_022_table_021", + "page": 22, + "table_number": 21, + "crop": "crops/page_022_table_021.png", + "annotation": { + "page_nr": 22, + "image": "tables/page_022_table_021/crop.png", + "image_name": "crop.png", + "benchmark_table_key": "page_022_table_021", + "legacy_table_number": 21 + } + } + ] +} diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_006_table_001/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_006_table_001/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..d056362c31f0a11ea9813077d7f4330265319948 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_006_table_001/gold.csv @@ -0,0 +1,58 @@ +Z,Material,Reactant A,Reactant B,Substrate,Refs. +5,Boron,,,, +,B2O3,BBr3,H2O,SiO2 gel,85 +,BxPyOz,B(OMe)3,POCl3,SiO2 gel,88 and 89 +13,Aluminum,,,, +,Al2O3,AlCl3,H2O,SiO2 gel,"83, 90, and 91" +,,AlCl3,H2O,Al2O3 gel,90 +,,AlCl3,H2O,"Si, Al",91 +,,AlBr3,H2O,Si,92 +,,AlMe3,NO2,Si,93 +,AlxSiyOz,AlCl3,Si(OEt)4,SiO2 gel,94 +,AlxCryOz,AlMe3,CrO2Cl2,Si,93 +14,Silicon,,,, +,SiO2,SiCl4,H2O,Si,78 +,,SiCl4,H2O,Ge,95 +,,SiCl4,H2O,SiO2 gel,90 +,,SiCl4,H2O,Al2O3 gel,90 +,,SiCl4,H2O,SiC,96 +,,SiCl3H,H2O,SiO2 gel,97–99 +,SixAlyOz,Si(OEt)4,AlCl3,SiO2 gel,94 +,SixTiyOz,Si(OEt)4,TiCl4,SiO2 gel,88 +15,Phosphorus,,,, +,POx,PCl3,H2O,SiO2 gel,82 and 100–102 +,,PCl3,– c,polymer,103 +,,POCl3,– c,SiO2 gel,104 and 105 +,,POCl3,H2O,SiC,96 +,PxByOz,POCl3,B(OMe)3,SiO2 gel,88 and 89 +22,Titanium,,,, +,TiO2,TiCl4,H2O,SiO2 gel,"1, 79, 80, 100, 101, and 106–113" +,,TiCl4,H2O,Si,81 and 114 +,,TiCl4,H2O,Ge,116 and 117 +,,TiCl4,H2O,SiC,96 and 116 +,,TiCl4,H2O,glass,118–122 +,,TiCl4,H2O,C,123–125 +,,TiCl4,H2O,GaAs,126 +,,TiCl4,H2O,Al,127 +,,TiCl4,H2O,Al2O3,128–132 +,,TiCl4,H2O,MgO,133 +,,Ti(OBu)4,H2O,glass,134 +,TixSiyOz,TiCl4,H2O,SiO2 gel,88 +23,Vanadium,,,, +,VOx,VOCl3,H2O,SiO2 gel,135–137 +,,VOCl3,H2O,Ge,117 +,,VOCl3,H2O,glass,121 +,,VOCl3,H2O,SiC,96 +,,VOCl3,– c,polymer,103 +24,Chromium,,,, +,CrOx,CrO2Cl2,– c,SiO2 gel,105 and 138–140 +,,CrO2Cl2,– c,Si,84 +,,CrO2Cl2,– c,Ge,84 and 117 +,,CrO2Cl2,– c,Ni,141 +,,CrO2Cl2,– c,Ti,141 +,,CrO2Cl2,H2O,glass,121 +,,CrO2Cl2,H2O,SiC,96 +,,CrO2Cl2,MeOH,Si,93 +,,CrO2Cl2,– c,polymer,103 +,,CrO2Cl2,H2,SiO2 gel,142 +,CrxAlyOz,CrO2Cl2,AlMe3,Si,93 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_007_table_002/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_007_table_002/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..c2a79c583f7c483d10eda4329df8ef8219670d53 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_007_table_002/gold.csv @@ -0,0 +1,23 @@ +Z,Material,Reactant A,Reactant B,Substrate,Refs. +26,Iron,,,, +,FeOx,FeCl3,– c,SiO2 gel,143 +30,Zinc,,,, +,ZnO,ZnCl2,H2O,SiO2 gel,144 +,ZnS,ZnCl2,H2S,SiO2 gel,86 +,,ZnEt2,H2S,SiO2,145 +32,Germanium,,,, +,GeO2,GeCl4,H2O,SiO2 gel,1 and 146 +38,Cadmium,,,, +,CdS,Cd,S,GaAs,147 +,,CdMe2,H2S,SiO2,145 +,CdSe,Cd,Se,GaAs,147 and 148 +,,CdMe2,H2Se,SiO2,145 +,,CdMe2,H2Se,"glass, GaAs",149 +,CdTe,Cd,Te,GaAs,147 +,,Cd,Te,Si,148 +50,Tin,,,, +,SnO2,SnCl4,H2O,SiO2 gel,111 and 150 +,,SnMe4,N2O4,Si,151 +,,SnEt4,N2O4,Si,151 +73,Tantalum,,,, +,Ta2O5,TaCl5,H2O,"Si, Al",91 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_007_table_003/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_007_table_003/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..745d384962dff0d59df748f64beba6668f1540f6 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_007_table_003/gold.csv @@ -0,0 +1,11 @@ +Name,Abbreviation,Refs. +Atomic layer deposition,ALD,19 +Atomic layer epitaxy,ALE,2 +Atomic layer evaporation,ALE,154 +Atomic layer growth,ALG,155 +Chemical assembly,,126 +Molecular deposition,,117 +Molecular lamination,,156 +Molecular layer epitaxy,MLE,153 +Molecular layering,ML,1 +Molecular stratification,,105 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_009_table_004/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_009_table_004/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..cc14d7a43697feac9c4a66dacbcbc86853e0a16e --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_009_table_004/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,Refs. +5,Boron,,, +,B2O3,BBr3,H2O,85 +,BN,BCl3,NH3,158 +,,BBr3,NH3,159 +,BxPyOz,B(OMe)3,POCl3,88 and 89 +6,Carbon,,, +,C b,CFx,H c,160 +,,CCl3,H c,161 +12,Magnesium,,, +,MgO,MgCp2,H2O,162–166 +,,Mg(thd)2,H2O2,167 +,,Mg(thd)2,O3,168 +,MgTe,Mg,Te,169 and 170 +13,Aluminum,,, +,Al2O3,AlCl3,H2O,"76, 77, 83, 90, 91, 91, and 171–184" +,,AlCl3,O2,185 and 186 +,,AlCl3,ROH d,"173, 181, and 187" +,,AlCl3,Al(OEt)3,188 +,,AlCl3,Al(OiPr)3,188 and 189 +,,AlBr3,H2O,92 +,,AlMe3,H2O,"166, 179, and 190–262" +,,AlMe3,H2O2,263–269 +,,AlMe3,O3,"236, 244, 245, and 270–273" +,,AlMe3,O2 e,274–276 +,,AlMe3,N2O,266 +,,AlMe3,NO2,194 +,,AlMe3,N2O4,151 +,,AlMe3,iPrOH,277 +,,AlMe3,Al(OiPr)3,188 +,,AlMe2Cl,H2O,278 +,,AlMe2OiPr,H2O,279 and 280 +,,AlEt3,H2O,163 +,,Al(OEt)3,H2O,173 +,,Al(OEt)3,O2,173 +,,Al(OnPr)3,H2O,173 and 181 +,,Al(OnPr)3,O2,173 +,,Al(mmp)3,H2O,281 +,AlN,AlCl3,NH3,282 and 283 +,,AlCl3,NH3 + H2 e,284 and 285 +,,AlMe3,NH3,"209, 216, 283, and 286–292" +,,AlEt3,NH3,293 and 294 +,,Me3N:AlH3,NH3,295 +,,Me2EtN:AlH3,NH3,296–298 +,AlP,AlMe2H,PH3,299–301 +,,Me2EtN:AlH3,PH3,302 +,AlAs,AlCl3,AsH3,303 and 304 +,,AlMe3,AsH3,305–315 +,,AlMe2H,AsH3,316–320 +,,AlEt3,AsH3,309 and 311 +,,AliBu3,AsH3,321 +,,Me3N:AlH3,AsH3,322 +,,Me3N:AlH3,As(NMe2)3,323 and 324 +,,Me2EtN:AlH3,AsH3,320 and 325–330 +,Al,AlMe3,H2 e,331 and 332 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_010_table_005/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_010_table_005/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..509b398ab6197c7c15903f84b89b6874f96cb030 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_010_table_005/gold.csv @@ -0,0 +1,64 @@ +Z,Material,Reactant A,Reactant B,Refs. +,AlxSiyOz,AlCl3,Si(OEt)4,94 +,Al2O3/ SiO2 f,AlMe3,(tBuO)3SiOH,157 +,AlxTiyOz,AlCl3,Ti(OEt)4,188 +,,AlCl3,Ti(OiPr)4,188 +,,AlMe3,Ti(OiPr)4,188 +,AlxCryOz,AlMe3,CrO2Cl2,93 +,AlxZryOz,Al(OEt)3,ZrCl4,188 +,AlxHfyOz,Al(OEt)3,HfCl4,188 +14,Silicon,,, +,SiO2,SiCl4,H2O,"78, 90, 95, 96, 195, 214, and 333–337" +,,SiCl4,H2O + cat. g,335 and 338–341 +,,SiCl3H,H2O,97–99 +,,SiCl2H2,O3,342 +,,Si(OEt)4,H2O + cat.,343 +,,HMDS h,O2,344 +,,Si(NCO)4,H2O,345 +,,Si(NCO)4,NEt3,346 +,,MeOSi(NCO)3,H2O2,347 and 348 +,Si3N4,SiCl4,NH3,349–352 +,,SiCl2H2,NH3,352 +,,SiCl2H2,NH3 e,353 +,,SiCl2H2,NH3 + cat.,354 and 355 +,,Si2Cl6,N2H4,356 +,SiC,SiCl2H2,C2H4,357 and 358 +,,SiEt2H2,– i,359 +,,Si2H6,C2H4,360 +,,Si2H6,C2H2,361–364 +,Si,SiCl4,Si2H6,365 +,,SiCl2H2,H2,366 and 367 +,,SiCl2H2,H c,368–375 +,,SiCl2H2,– j,376–378 +,,SiEt2H2,– k,379 +,,SiH4,– k,380–382 +,,Si2Cl6,Si2H6,"371, 372, 383, and 384" +,,Si2Cl6,H c,385 +,,Si2H6,– k,386–394 +,,Si2H6,– j,395–399 +,,Si2H6,– k,394 and 400 +,,Si2H6,– l,401 +,,Si3H8,– k,370 and 402 +,SixAlyOz,Si(OEt)4,AlCl3,94 +,SiO2/ Al2O3 f,(tBuO)3SiOH,AlMe3,157 +,SixTiyOz,Si(OEt)4,TiCl4,88 +,SixZryOz,SiCl4,Zr(OtBu)4,403 +,,Si(OEt)4,ZrCl4,188 +,,Si(OnBu)4,ZrCl4,188 and 404 +,,Si(OnBu)4,Zr(NEt2)4,405 +,SixHfyOz,Si(OEt)4,HfCl4,406 +,,Si(OEt)4,HfI4,406 +,,(tBuO)3SiOH,Hf(NMe2)4,407 +15,Phosphorus,,, +,POx,PCl3,H2O,82 and 100–103 +,,POCl3,H2O,"96, 104, and 105" +,PxByOz,POCl3,B(OMe)3,88 and 89 +20,Calcium,,, +,CaO (CaCO3),Ca(thd)2,H2O,408 +,,Ca(thd)2,O3,409 +,CaS,Ca(thd)2,H2S,408 and 410–414 +,CaF2,Ca(thd)2,HF,415 +21,Scandium,,, +,Sc2O3,ScCp3,H2O,416 +,,Sc(thd)3,O3,416 +,,Sc(thd)3,O3 + H2O2,416 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_011_table_006/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_011_table_006/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..2a857f8df5a2665df9e4b1fa387dbb65fd51fc47 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_011_table_006/gold.csv @@ -0,0 +1,58 @@ +Z,Material,Reactant A,Reactant B,Refs. +22,Titanium,,, +,TiO2,TiCl4,H2O,"1, 79–81, 96, 100, 101, 106–114, 116–133, 207, 212, 237, 260, 336, and 417–453" +,,TiCl4,H2O2,"267, 269, and 454" +,,TiI4,H2O,455 +,,TiI4,H2O2,456–458 +,,TiI4,O2,459 and 460 +,,Ti(OMe)4,H2O,461 +,,Ti(OEt)4,H2O,"206, 212, and 462–466" +,,Ti(OiPr)4,H2O,212 and 467–474 +,,Ti(OiPr)4,O2,434 and 475 +,,Ti(OiPr)4,O2 e,476 +,,Ti(OiPr)4,O3,477 +,,Ti(OiPr)2(dmae)2,H2O,478 +,,Ti(OBu)4,H2O,134 +,,Ti(NMe2)4,O2 e,479 +,TiN,TiCl4,NH3,480–494 +,,TiCl4,NH3 + cat.,205 and 481–483 +,,TiCl4,"N2,H2 e",274 +,,TiCl4,Me2NNH2,495 +,,TiCl4,tBuNH2,496 +,,TiCl4,AyNH2,496 +,,TiI4,NH3,483 and 497 +,,TiI4,tBuNH2,496 +,,TiI4,AyNH2,496 +,,Ti(NMe2)4,NH3,498–507 +,,Ti(NMe2)4,NH3 e,508 and 509 +,,Ti(NMe2)4,N2 e,509–512 +,,Ti(NMe2)4,H2 e,"509, 511, and 512" +,,Ti(NEt2)4,NH3,506 +,,Ti(NEtMe)4,NH3,513 and 514 +,Ti,TiCl4,H2 e,515 and 516 +,TixAlyOz,Ti(OEt)4,AlCl3,188 +,,Ti(OiPr)4,AlCl3,188 +,,Ti(OiPr)4,AlMe3,188 +,TixSiyOz,TiCl4,Si(OEt)4,88 +,TixZryOz,Ti(OiPr)4,ZrCl4,"188, 517, and 518" +,TixHfyOz,Ti(OiPr)4,HfCl4,188 +23,Vanadium,,, +,VOx,VOCl3,H2O,"96, 103, 117, 121, and 135–137" +,,VO(OiPr)3,H2O,519 and 520 +,,VO(OiPr)3,O2,521–523 +,,VO(acac)2,O2,524 and 525 +24,Chromium,,, +,CrOx,CrO2Cl2,H2O,"84, 96, 103, 105, 117, 121, and 138–142" +,,CrO2Cl2,MeOH,93 +,,Cr(acac)3,O2,434 and 526–530 +,CrxAlyOz,CrO2Cl2,AlMe3,93 +25,Manganese,,, +,MnOx,Mn(thd)3,O3,531–533 +,MnS,MnCl2,H2S,76 and 77 +,MnTe,Mn,Te,170 and 534–543 +26,Iron,,, +,FeOx,Fe(acac)3,O2,544 +,,Fe(thd)3,O3,545 +,,Fe(tBuAMD)2,H2O,546 +,Fe,Fe(tBuAMD)2,H2,546 +27,Cobalt,,, diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_012_table_007/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_012_table_007/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..e9e0ddadaceb5f3411e1824464dda2f1bf7db711 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_012_table_007/gold.csv @@ -0,0 +1,59 @@ +Z,Material,Reactant A,Reactant B,Refs. +,CoOx,Co(acac)2,O2,547 and 548 +,,Co(acac)3,O2,547–554 +,,Co(thd)2,O3,555 +,,Co(iPrAMD)2,H2O,546 +,Co,Co(iPrAMD)2,H2,546 +28,Nickel,,, +,NiO,NiCp2,H2O,556 +,,Ni(acac)2,O2,557–559 +,,Ni(acac)2,O3,560 and 561 +,,Ni(thd)2,O3,562 +,,Ni(apo)2,O3,560 +,,Ni(dmg)2,O3,560 +,Ni,Ni(acac)2,H2,561 +,,Ni(iPrAMD)2,H2,546 +29,Copper,,, +,CuO,Cu(acac)2,O2,563 +,,Cu(thd)2,O2,"46, 50, and 564" +,,Cu(hfac)2,H2O,565 +,CuxS,Cu(thd)2,H2S,566–569 +,Cu,CuCl,H2,570 and 571 +,,CuCl,H2 + H2O,571 and 572 +,,CuCl,Zn,573 +,,Cu(acac)2,H2,561 +,,Cu(acac)2,H2 e,574 +,,Cu(thd)2,H2,575 and 576 +,,Cu(hfac)2,ROH d,577 +,,Cu(hfac)2,HCHO m,577 +,,Cu(iPrAMD),H2,546 +30,Zinc,,, +,ZnO,Zn,O2,578 +,,Zn,H2O,579 +,,ZnCl2,H2O,144 +,,ZnCl2,O2,580–582 +,,ZnMe2,H2O,583 and 584 +,,ZnEt2,H2O,"201, 229, 231, and 584–607" +,,ZnEt2,H2O n,598 +,,ZnEt2,O2,605 +,,Zn(OAc)2,H2O,608–610 +,ZnS,Zn,S,"2, 171, 611, and 612" +,,Zn,H2S,613 +,,ZnCl2,H2S,"76, 77, 86, 177, and 614–626" +,,ZnMe2,H2S,583 and 627–635 +,,ZnEt2,H2S,"145, 596, 636, and 637" +,,ZnEt2,Et2S2,638 +,,Zn(OAc)2,H2S,"415, 608, 615, 616, 618–620, and 639" +,ZnSe,Zn,Se,"578, 611, and 640–655" +,,Zn,H2Se,656 +,,Zn,Et2Se,657 +,,ZnCl2,H2Se,658–660 +,,ZnMe2,H2Se,633–635 and 661–671 +,,ZnEt2,H2Se,672 +,,ZnEt2,Et2Se2,638 +,,Zn[N(SiMe3)2]2,H2Se,672 +,ZnTe,Zn,Te,"154, 536, 640, 643–645, 647, and 673–679" +,,ZnMe2,Et2Te,680 +,,ZnMe2,MeAyTe,680 +,ZnF,Zn(OAc)2,HF,415 +31,Gallium,,, diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_013_table_008/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_013_table_008/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..4d112f48cb17b6acf1ce0b016c8eb96321685e1d --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_013_table_008/gold.csv @@ -0,0 +1,58 @@ +Z,Material,Reactant A,Reactant B,Refs. +,Ga2O3,Ga(acac)3,O3,681 and 682 +,,Ga(acac)3,H2O,681 +,GaN,Ga,N2,683 and 684 +,,GaCl,NH3,685 and 686 +,,GaCl3,NH3,687 +,,GaMe3,NH3,290 and 688–692 +,,GaEt3,NH3,"294, 693, and 694" +,,GaEt3,NH3 o,695 +,GaP,Ga,P,2 +,,GaCl,PH3,696 +,,GaMe3,PH3,"299, 313, and 697–701" +,,GaEt3,PH3 n,702 +,GaAs,GaCl,AsH3,696 and 703–716 +,,GaCl3,AsH3,"303, 304, and 717–721" +,,GaCl3,As,720 +,,GaBr,AsH3,722 +,,GaI,AsH3,722 +,,GaMe3,AsH3,"153, 305–308, 311, 313, 315, 318, 321, 698, 701, and 723–771" +,,GaMe3,EtAsH2,772 +,,GaMe3,tBuAsH2,773–780 +,,GaEt3,AsH3,"26, 309, 311, 698, 729, 738, 743, and 781–788" +,,GaEt3,tBuAsH2,779 and 789 +,,GaEt3,(Me2N)3As,"324, 790, and 791" +,,GaEt2Cl,As,792 +,,GaEt2Cl,AsH3,755 and 793 +,,GaEt2Me,AsH3,698 +,,GaiBu3,AsH3,26 +,,GaNp3,tBuAsH2,779 and 794 +32,Germanium,,, +,GeO2,GeCl4,H2O,1 and 146 +,Ge,GeCl4,H c,795 and 796 +,,GeMe2H2,H c,797–799 +,,GeEt2H2,– k,800 and 801 +,,GeH4,– k,382 and 802 +,,Ge2H6,– k,803 and 804 +38,Strontium,,, +,SrO (SrCO3),Sr(CpiPr3)2,H2O,805 and 806 +,,Sr(thd)2,O3,807 +,,Sr(methd)2,O2 e,476 +,SrS,Sr(CpMe5)2,H2S,808 +,,Sr(CpiPr3)2,H2S,808 and 809 +,,Sr(thd)2,H2S,"410, 412, and 810–812" +,SrF2,Sr(thd)2,HF,415 +39,Yttrium,,, +,Y2O3,YCp3,H2O,813 +,,Y(CpMe)3,H2O,813 +,,Y(thd)3,O2,814 +,,Y(thd)3,O3,"219, 237, 814, and 815" +,Y2O2S,Y(thd)3,H2S,816 +40,Zirconium,,, +,ZrO2,ZrCl4,H2O,"212, 219, 222, 230, 246, 434, and 817–834" +,,ZrCl4,H2O2,825 and 826 +,,ZrCl4,O2,835 and 836 +,,ZrI4,H2O,837 +,,ZrI4,H2O2,838–841 +,,ZrCp2Cl2,O3,842 and 843 +,,ZrCp2Me2,H2O,844 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_014_table_009/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_014_table_009/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..73ab5ae2445a3121f21b98bd2131180c3fff40a8 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_014_table_009/gold.csv @@ -0,0 +1,57 @@ +Z,Material,Reactant A,Reactant B,Refs. +,,ZrCp2Me2,O3,842 and 845 +,,Zr(OiPr)2(dmae)2,H2O,846 +,,Zr(OtBu)4,H2O,"471, 473, 474, and 847–851" +,,Zr(OtBu)4,O2,851 +,,Zr(OtBu)4,O2 e,852–855 +,,Zr(OtBu)4,N2O,851 +,,Zr(OtBu)4,Ar e,855 +,,Zr(OtBu)2(dmae)2,H2O,846 and 856 +,,Zr(dmae)4,H2O,846 +,,Zr(thd)4,O3 e,842 +,,Zr(NMe2)4,H2O,857 and 858 +,,Zr(NEt2)4,H2O,857 +,,Zr(NEt2)4,O2 e,853 +,,Zr(NEtMe)4,H2O,857 +,,Zr[N(SiMe3)2]2Cl2,H2O,859 +,Zr3N4,Zr(NMe2)4,NH3,860 +,,Zr(NEtMe)4,NH3,860 +,,Zr(NEt2)4,NH3,860 +,ZrxAlyOz,ZrCl4,Al(OEt)3,188 +,ZrxSiyOz,ZrCl4,Si(OEt)4,188 and 861 +,,ZrCl4,Si(OnBu)4,188 and 404 +,,Zr(OtBu)4,SiCl4,403 +,,Zr(NEt2)4,Si(OnBu)4,405 +,ZrxTiyOz,ZrCl4,Ti(OiPr)4,"188, 517, and 518" +41,Niobium,,, +,Nb2O5,Nb(OEt)5,H2O,"184, 206, 465, 820, 862, and 863" +,NbN,NbCl5,NH3,"480, 482, and 864" +,,NbCl5,NH3 + cat.,482 and 864 +,,NbCl5,Me2NNH2,495 +42,Molybdenum,,, +,MoxN,MoCl5,NH3,480 +,,MoCl5,Me2NNH2,495 +,Mo,MoCl5,Zn,865 +44,Ruthenium,,, +,RuO,Ru(CpEt)2,O2,866 +,Ru,RuCp2,O2,867–869 +,,Ru(CpEt)2,O2,866 +,,Ru(CpEt)2,NH3 e,870 and 871 +,,Ru(od)3,O2,872 +,,Ru(thd)3,H2,873 +,,Ru(thd)3,O2,869 and 874 +46,Palladium,,, +,Pd,Pd(thd)2,H2,873 +,,Pd(thd)2,O2,564 +,,Pd(hfac)2,H2,875 +,,Pd(hfac)2,HCOCOOH,875 +48,Cadmium,,, +,CdS,Cd,S,147 and 876 +,,CdCl2,H2S,623 +,,CdMe2,H2S,145 and 877–881 +,CdSe,Cd,Se,"147–149, 611, and 882–886" +,,CdMe2,H2Se,145 and 662 +,CdTe,Cd,Te,"147, 148, 170, 534–539, 541–543, 655, 675, 679, and 886–911" +,,CdMe2,Et2Te,680 +,,CdMe2,MeAyTe,680 and 912–914 +,,CdMe2,iPr2Te,915 and 916 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_015_table_010/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_015_table_010/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..265bbf9b0809ae603c023fb7c15760bbfcfac9b1 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_015_table_010/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,Refs. +49,Indium,,, +,In2O3,InCl3,H2O,212 and 917–921 +,,InCl3,H2O2,921 +,,InMe3,H2O,922 +,In2S3,InCl3,H2S,923 +,,In(acac)3,H2S,"596, 597, and 924–927" +,InN,In,N2,928 +,,InEtMe2,NH3,"290, 689, and 690" +,InP,InCl,PH3,696 +,,InCl,tBuPH2,712 +,,InMe3,PH3,"741, 754, and 929–937" +,,InMe3,tBuPH2,938–940 +,,InEt3,PH3,697 and 699 +,,InEt3,tBuPH2,941 +,InAs,InCl,AsH3,"704, 705, and 717" +,,InMe3,AsH3,"733, 942, and 943" +,,InMe3,tBuAsH2,"780, 931, 933, 944, and 945" +,,InClMe2,AsH3,946 +,,InEt3,AsH3,"726, 947, and 948" +,InSb,In,Sb,949 and 950 +50,Tin,,, +,SnO2,Sn,O2,2 +,,SnCl4,H2O,"111, 150, 212, 445, 682, and 951–960" +,,SnCl4,H2O2,"959, 961, and 962" +,,SnI4,H2O2,959 +,,SnI4,O2,959 and 961–964 +,,SnMe4,N2O4,151 +,,SnEt4,N2O4,151 +51,Antimony,,, +,Sb2O5,SbCl5,H2O,952 +56,Barium,,, +,BaS,Ba(CpMe5)2,H2S,808 and 809 +,,Ba(thd)2,H2S,410 and 965 +57,Lanthanum,,, +,La2O3,La(thd)3,O2,46 and 50 +,,La(thd)3,O3,"555, 562, 966, and 967" +,,La[N(SiMe3)2]3,H2O,"407, 968, and 969" +,,La(iPrAMD)3,H2O,546 +,La2S3,La(thd)3,H2S,970 +,LaxSiyOx,La[N(SiMe3)2]3,(tBuO)3Si,407 +58,Cerium,,, +,CeO2,Ce(thd)4,O2,46 and 50 +,,Ce(thd)4,O3,971 +,,Ce(thd)3phen,O3,971 +59,Praseodymium,,, +,PrOx,Pr[N(SiMe3)2]3,H2O,972 +60,Neodymium,,, +,Nd2O3,Nd(thd)3,O3,973 +62,Samarium,,, +,Sm2O3,Sm(thd)3,O3,973 +63,Europium,,, +,Eu2O3,Eu(thd)3,O3,973 +64,Gadolinium,,, +,Gd2O3,Gd(thd)3,O3,973 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_016_table_011/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_016_table_011/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..d3a75fd961f6b79c9f11ec4a2537b4964afbec3f --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_016_table_011/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,Refs. +66,Dysprosium,,, +,Dy2O3,Dy(thd)3,O3,973 +67,Holmium,,, +,Ho2O3,Ho(thd)3,O3,973 +68,Erbium,,, +,Er2O3,Er(thd)3,O3,973 and 974 +69,Thulium,,, +,Tm2O3,Tm(thd)3,O3,973 +71,Lutetium,,, +,Lu2O3,Lu[Cp(SiMe3)]2Cl,H2O,975 +72,Hafnium,,, +,HfO2,HfCl4,H2O,"219, 238, 244, 252, 253, 255–257, 259, 439, 822, 832, 837, 969, and 976–1008" +,,HfCl4,O2,1009 and 1010 +,,HfCl4,O3,990 +,,HfCl2[N(SiMe3)2]2,H2O,1011 +,,HfI4,H2O,"837, 989, 994, and 1012" +,,HfI4,H2O2,1012 +,,HfI4,O2,994 and 1013–1016 +,,Hf(OtBu)4,O3,1017 and 1018 +,,Hf(OtBu)4,O2 e,854 +,,Hf(OtBu)2(mmp)2,H2O,1019 +,,Hf(mmp)4,H2O,1020 +,,Hf(ONEt2)4,H2O,1021 +,,Hf(NMe2)4,H2O,"407, 857, 858, 1022, and 1023" +,,Hf(NMe2)4,O3,1023 +,,Hf(NEt2)4,H2O,"857, 1024, and 1025" +,,Hf(NEt2)4,O2,1026 +,,Hf(NEt2)4,O2 e,1026 +,,Hf(NEtMe)4,H2O,"244, 857, 1005, and 1027–1029" +,,Hf(NEtMe)4,O3,1018 +,,Hf[N(SiMe3)2]2Cl2,H2O,1030 +,,Hf(NO3)4,H2O,1031–1033 +,Hf3N4,Hf(NMe2)4,NH3,860 +,,Hf(NEt2)4,NH3,860 +,,Hf(NEtMe)4,NH3,860 +,HfxAlyOz,HfCl4,Al(OEt)3,188 +,HfxSiyOz,HfCl4,Si(OEt)4,406 +,,HfCl4,Si(OnBu)4,1034 and 1035 +,,HfI4,Si(OEt)4,406 +,,Hf(NMe2)4,(tBuO)3SiOH,407 +,HfxTiyOz,HfCl4,Ti(OiPr)4,188 +73,Tantalum,,, +,Ta2O5,TaCl5,H2O,"76, 77, 91, 174, 183, 212, 614, 822, 863, 976, and 1036–1040" +,,TaCl5,Ta(OEt)5,188 and 1041 +,,TaI5,H2O2,1042 +,,TaI5,O2,1043 +,,Ta(OEt)5,H2O,"178, 184, 206, 207, 212, 465, 820, 863, 978, and 1044–1047" +,,Ta(OEt)5,O2 e,1048 +,,Ta(OEt)5,O2 n,1049 +,,Ta(NMe2)5,H2O,466 +,,Ta(NEt2)5,H2O,1050 +,,Ta(NEt)(NEt2)3,H2O,1050 +,TaNx,TaCl5,NH3,480 and 1051 +,,TaCl5,NH3 + cat.,1051 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_017_table_012/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_017_table_012/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..85dbb9250f2b7656af83699a551cfb1e738af999 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_017_table_012/gold.csv @@ -0,0 +1,40 @@ +Z,Material,Reactant A,Reactant B,Refs. +,,TaCl5,Me2NNH2,495 +,,TaCl5,tBuNH2,1052 +,,TaCl5,AyNH2,1052 +,,TaCl5,N2 e,1053–1055 +,,TaBr5,tBuNH2,1052 +,,Ta(NMe2)5,NH3,1056 and 1057 +,,Ta(NtBu)(NEt2)3,NH3,1058 +,,Ta(NtBu)(NEt2)3,H2 e,1059 and 1060 +,,Ta(NtBu)(NEtMe)3,NH3,1061 +,,Ta(NtBu)(NEtMe)3,NH3 e,1061 +,Ta,TaCl5,H2 e,515 and 1062 +,,TaF5,Si2H6 p,1063 +74,Tungsten,,, +,WO3,WF6,H2O,1064 +,,WFxOy,H2O,1064 +,,WOCl4,– q,1065 +,WxN,WF6,NH3,"490, 491, 1066, and 1067" +,,WF6,NH3 e,1068–1070 +,,W(NtBu)2(NMe2)2,NH3,1071–1073 +,WS2,WF6,H2S,1074 +,WxC,W(NtBu)2(NMe2)2,"H2, N2 e",1075 +,W,WF6,Si2H6,"249, 602, 1066, and 1076–1080" +77,Iridium,,, +,Ir,Ir(acac)3,O2,1081 +78,Platinum,,, +,Pt,Pt(CpMe)Me3,O2,"867, 869, and 1082" +,,Pt(acac)2,H2,561 +80,Mercury,,, +,HgTe,HgMe2,MeAyTe,912 and 914 +82,Lead,,, +,PbS,PbBr2,H2S,1083 +,,PbI2,H2S,1083 +,,Pb(OAc)2,H2S,1083 +,,Pb(OtBu)2,H2S,1084 +,,Pb4O(OtBu)6,H2S,1084 +,,Pb(thd)2,H2S,1083 and 1084 +,,Pb(dedtc)2,H2S,1083 and 1084 +83,Bismuth,,, +,BiOx,Bi[N(SiMe3)2]3,H2O,1085 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_018_table_013/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_018_table_013/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..45d10c9b21d7a4c3156fbdd78d279c71afec3573 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_018_table_013/gold.csv @@ -0,0 +1,34 @@ +Z,Material,Reactant A,Reactant B,Refs. +5,Boron,,, +,BPO4,B(OMe)3,POCl3,89 +6,Carbon,,, +,C,CF3,–,1086 +13,Aluminum,,, +,Al2O3,AlCl3,H2O,1087 +,,AlMe3,H2O,1088–1097 +14,Silicon,,, +,SiO2,SiCl4,H2O,1098 +,,SiCl4,H2O + cat.,1099 +,Si3N4,SiH4,NH3,1100 +,Si,SiCl3H,H2,1101 +20,Calcium,,, +,CaS,Ca(thd)2,–,1102 +22,Titanium,,, +,TiO2,TiCl4,H2O,1103 and 1104 +,TiN,TiCl4,NH3,1105 +28,Copper,,, +,Cu,CuCl,H2,1106–1108 +30,Zinc,,, +,ZnS,ZnCl2,H2S,1109–1111 +,ZnSe,ZnCl2,H2Se,1111 +,ZnTe,ZnCl2,H2Te,1111 +31,Gallium,,, +,GaAs,GaCl,AsH3,711 and 1112–1114 +40,Zirconium,,, +,ZrO2,ZrCl4,H2O,1091 and 1115–1121 +72,Hafnium,,, +,HfO2,HfCl4,H2O,"1091, 1119, 1122, and 1123" +,,HfCl4,Hf(OEt)4,1124 +,,Hf(OEt)4,H2O,1124 +73,Tantalum,,, +,Ta2O5,TaCl5,H2O,1125 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_020_table_014/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_020_table_014/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..bd46f29b1fc6f4ef80abbb31cd2917035aa46508 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_020_table_014/gold.csv @@ -0,0 +1,11 @@ +Reactant B,Material,Reactant A (M) +O2,MOx,"Zn, Sn" +H2O,MOx,Zn +N2,MNx,"Ga, In" +S,MSx,"Zn, Cd" +H2S,MSx,Zn +P,MPx,Ga +Se,MSex,"Zn, Cd" +H2Se,MSex,Zn +Te,MTex,"Mg, Mn, Zn, Cd" +Sb,MSbx,In diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_015/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_015/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..93cf03695d92bd339bbd16019cc0cdbd41c5a819 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_015/gold.csv @@ -0,0 +1,13 @@ +Reactant B,Material,Reactant A (MLn: atom M–ligand L) +H2O,MOx,"B–Br, Al–(Cl,Br), Si–Cl, P–Cl, Ti–(Cl,I), Zn–Cl, Ge–Cl, Zr–(Cl,I), In–Cl, Sb–Cl, Hf–(Cl,I), Ta–Cl, W–F" +O2,MOx,"Ti–I, Zn–Cl, Sn–I, Hf–(Cl,I)" +O3,MOx,Hf–Cl +NH3,MNx,"B–(Cl,Br), Al–Cl, Si–Cl, Ti–(Cl,I), Ga–Cl, Nb–Cl, Mo–Cl, Ta–Cl, W–F" +H2S,MSx,"Mn–Cl, Zn–Cl, Cd–Cl, In–Cl, W–F, Pb–(Br,I)" +PH3,MPx,In–Cl +H2Se,MSex,Zn–Cl +AsH3,MAsx,"Ga–(Cl,Br,I), In–Cl" +H2,M,Cu–Cl +N,MNx,Ta–Cl +H,M,"C–Cl, Ti–Cl, Ge–Cl, Ta–Cl" +Si2H6,M,"Ta–F, W–F" diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_016/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_016/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..f5504898344eb2d6e6f8d17b00c59b5e646691e7 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_016/gold.csv @@ -0,0 +1,12 @@ +Reactant B,Material,Reactant A (MLn: atom M–ligand L) +H2O,MOx,"Al–(Me,Et), Zn–(Me,Et), In–Me" +O2,MOx,Zn–Et +O3,MOx,Al–Me +ROH,MOx,Al–Me +NH3,MNx,"Al–(Me,Et), Ga–(Me,Et)" +H2S,MSx,"Zn–(Me,Et), Cd–Me" +PH3,MPx,"Ga–Me, In–(Me,Et)" +H2Se,MSex,"Zn–(Me,Et), Cd–Me" +AsH3,MAsx,"Al–(Me,Et,iBu), Ga–(Me,Et,iBu), In–(Me,Et)" +O,MOx,Al–Me +H,M,Al–Me diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_017/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_017/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..bc73fb1b698088b6adc2ad79dd35c07533523569 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_017/gold.csv @@ -0,0 +1,4 @@ +Reactant B,Material,Reactant A (MLn: atom M–ligand L) +H2O,MOx,"Mg–Cp, Sc–Cp, Ni–Cp, Sr–CpiPr3, Y–(Cp,CpMe)" +O2,M,"Ru–(Cp,CpEt)" +H2S,MSx,"Sr–(CpMe5,CpiPr3)" diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_018/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_018/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..83b8575adbd3709343d99f1a8c0c3b00fa8d696d --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_021_table_018/gold.csv @@ -0,0 +1,6 @@ +Reactant B,Material,Reactant A (MLn: atom M–ligand L) +H2O,MOx,"Al–(OEt,OnPr), Si–OEt, Ti–(OMe,OEt,OiPr,OBu), Zr–(OtBu,dmae), Nb–OEt, Ta–OEt, Hf–mmp" +O2,MOx,"Al–(OEt,OnPr), Ti–OiPr, Zr–OtBu" +O3,MOx,"Ti–OiPr, Hf–OtBu" +H2S,MSx,Pb–OtBu +O,MOx,"Ti–OiPr, Zr–OtBu, Hf–OtBu, Ta–OEt" diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_019/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_019/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..3ca8f31c559e50c55cfb6d0bc8190dd1bcd1034d --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_019/gold.csv @@ -0,0 +1,9 @@ +Reactant B,Material,Reactant A (MLn: atom M–ligand L) +H2O,MOx,"Ca–thd,mark[1] Cu–Hfac, Ga–acac" +O2,MOx,"Cr–acac, Fe–acac, Co–acac, Ni–acac, Cu–(acac,thd), Y–thd, La–thd, Ce–thd" +O2,M,"Ru–od, Ru–thd, Pd–thd, Ir–acac" +O3,MOx,"Mg–thd, Ca–thd,mark[1] Sc–thd, Mn–thd, Fe–thd, Co–thd, Ni–(acac,thd), Ga–acac, Sr–thd,[1] Y–thd, La–thd, Ce–thd, Nd–thd, Sm–thd, Eu–thd, Gd–thd, Dy–thd, Ho–thd, Er–thd, Tm–thd" +ROH mark[2],M,Cu–hfac +H2S,MSx,"Ca–thd, Cu–thd, Sr–thd, Y–thd, In–acac, Ba–thd, La–thd, Pb–thd" +HF,MFx,"Ca–thd, Sr–thd" +H2,M,"Ni–acac, Cu–(acac,thd), Ru–thd, Pd–thd, Pd–hfac, Pt–acac" diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_020/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_020/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..a99d373dacc9c6ed3f3fc7f7714b9429ff863088 --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_020/gold.csv @@ -0,0 +1,9 @@ +Reactant B,Material,Reactant A (MLn: atom M–ligand L) +H2O,MOx,"Zr–(NMe2,NEt2), La–N(SiMe3)2, Pr–N(SiMe3)2, Hf–(NMe2,NEt2), Ta–(NMe2,NEt2), Bi–N(SiMe3)2" +O2,MOx,Hf–NEt2 +O3,MOx,Hf–NMe2 +NH3,MNx,"Ti–(NMe2,NEt2), Zr–(NMe2,NEt2), Hf–(NMe2,NEt2), Ta–NMe2" +H2Se,MSex,Zn–N(SiMe3)2 +O,MOx,"Ti–NMe2, Zr–NEt2, Hf–NEt2" +N,MNx,Ti–NMe2 +H,MNx,Ti–NMe2 diff --git a/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_021/gold.csv b/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_021/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..f588f1126cc9fcb92a7887143e1353cfd51342da --- /dev/null +++ b/Puurunen_2005/step2_table_reconstruction/tables/page_022_table_021/gold.csv @@ -0,0 +1,3 @@ +Reactant B,Material,Reactant A (MLn: atom M–ligand L) +H2O,MOx,"Fe–tBuAMD, Co–iPrAMD, La–iPrAMD" +H2,M,"Fe–tBuAMD, Co–iPrAMD, Ni–iPrAMD, Cu–iPrAMD" diff --git a/Puurunen_2005/step3_reference_table_classification/gold.json b/Puurunen_2005/step3_reference_table_classification/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..22eee463874acf53aa0686ab232b5ec2606572b1 --- /dev/null +++ b/Puurunen_2005/step3_reference_table_classification/gold.json @@ -0,0 +1,165 @@ +{ + "schema_version": 1, + "task": "step3_reference_table_classification", + "paper_id": "P252", + "public_id": "Puurunen_2005", + "gold_type": "controlled_gold", + "label_definition": { + "reference_table": "Table contains an explicit reference column usable for citation-to-bibliography matching.", + "non_reference_table": "Curated table does not contain an explicit reference column." + }, + "summary": { + "tables": 21, + "positive": 13, + "negative": 8 + }, + "tables": [ + { + "table_id": "page_006_table_001", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_006_table_001/gold.csv" + }, + { + "table_id": "page_007_table_002", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_007_table_002/gold.csv" + }, + { + "table_id": "page_007_table_003", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_007_table_003/gold.csv" + }, + { + "table_id": "page_009_table_004", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_009_table_004/gold.csv" + }, + { + "table_id": "page_010_table_005", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_010_table_005/gold.csv" + }, + { + "table_id": "page_011_table_006", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_011_table_006/gold.csv" + }, + { + "table_id": "page_012_table_007", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_012_table_007/gold.csv" + }, + { + "table_id": "page_013_table_008", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_013_table_008/gold.csv" + }, + { + "table_id": "page_014_table_009", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_014_table_009/gold.csv" + }, + { + "table_id": "page_015_table_010", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_015_table_010/gold.csv" + }, + { + "table_id": "page_016_table_011", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_016_table_011/gold.csv" + }, + { + "table_id": "page_017_table_012", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_017_table_012/gold.csv" + }, + { + "table_id": "page_018_table_013", + "label": "reference_table", + "is_reference_table": true, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_018_table_013/gold.csv" + }, + { + "table_id": "page_020_table_014", + "label": "non_reference_table", + "is_reference_table": false, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_020_table_014/gold.csv" + }, + { + "table_id": "page_021_table_015", + "label": "non_reference_table", + "is_reference_table": false, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_021_table_015/gold.csv" + }, + { + "table_id": "page_021_table_016", + "label": "non_reference_table", + "is_reference_table": false, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_021_table_016/gold.csv" + }, + { + "table_id": "page_021_table_017", + "label": "non_reference_table", + "is_reference_table": false, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_021_table_017/gold.csv" + }, + { + "table_id": "page_021_table_018", + "label": "non_reference_table", + "is_reference_table": false, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_021_table_018/gold.csv" + }, + { + "table_id": "page_022_table_019", + "label": "non_reference_table", + "is_reference_table": false, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_022_table_019/gold.csv" + }, + { + "table_id": "page_022_table_020", + "label": "non_reference_table", + "is_reference_table": false, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_022_table_020/gold.csv" + }, + { + "table_id": "page_022_table_021", + "label": "non_reference_table", + "is_reference_table": false, + "criterion": "explicit_reference_column", + "step2_gold_csv": "../step2_table_reconstruction/tables/page_022_table_021/gold.csv" + } + ] +} diff --git a/Puurunen_2005/step4_bibliography/gold.json b/Puurunen_2005/step4_bibliography/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..daf15e169eab9301feb89b71f10c3d76810ff1fa --- /dev/null +++ b/Puurunen_2005/step4_bibliography/gold.json @@ -0,0 +1,4830 @@ +[ + { + "nr": "1", + "ref": "A. 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Potter, K. Kukli, A. Rahtu, M. Ritala, and M. Leskelä, J. Mater. Chem. 14, 3101 \u00012004\u0002." + }, + { + "nr": "67", + "ref": "Different experimental conditons have been hypothesized to lead to different reactions in ALD processes based on the same reactants \u0001see, e.g., Refs. 3, 211, and 217\u0002." + }, + { + "nr": "68", + "ref": "No universally accepted definition of ALD is currently available. The definition used in this work is built on the recognized practice of ALD and covers most of ALD processes with compounds as well as elements as reactants. Also other distinctively different definitions have been suggested, for example, that the GPC should be a monolayer or the GPC should be constant over the cycles. Most ALD processes do not fulfill these criteria, however." + }, + { + "nr": "69", + "ref": "In addition to “self-terminating” used to refer to ALD reactions in this work, ALD reactions have been referred to being saturating, selflimiting, self-extinguishing, etc." + }, + { + "nr": "70", + "ref": "In this review, ALD is defined to be based on gas–solid reactions. Analogous experiments have been made from liquid phase \u0003e.g., S. Lindroos, T. Kanniainen, and M. Leskelä, Appl. Surf. Sci. 75, 70 \u00011994\u0002\u0004 and electrochemically \u0003e.g., J. L. Stickney, Electroanal. Chem. 21, 75 \u00011999\u0002\u0004 as well. Although in some publications such experiments may be classified as ALD, in this work they are excluded from the definition." + }, + { + "nr": "71", + "ref": "Instead of the reactant of Reactant B, Step 3 may be, for example, a thermal treatment \u0001see Table III\u0002." + }, + { + "nr": "72", + "ref": "The term “half reaction” in ALD should not be confused with the conceptual half reactions in electrochemistry. In ALD, the half reactions are real reactions." + }, + { + "nr": "73", + "ref": "Some ALD processes consist of repeating the self-terminating reactions of more than two reactants, for example, the WF6/BEt3/NH3 \u0001Et =ethyl\u0002 process to grow WCxNy \u0003e.g., A. Martin Hoyas, J. Schuhmacher, D. Shamiryan, J. Waeterloos, W. Besling, J. P. Celis, and K. Maex, J. Appl. Phys. 95, 381 \u00012004\u0002\u0004. Each new reactant adds a reaction step and a purge/evacuation step to the reaction cycle." + }, + { + "nr": "74", + "ref": "T. 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Barbolla, AVS Topical Conference on Atomic Layer Deposition ALD 2004, Helsinki, Finland, 16–18 August 2004 \u0001presentations published on CD, AVS, 2004\u0002." + }, + { + "nr": "1134", + "ref": "One group \u0001Refs. 979 and 980\u0002 has reported GPC values for the HfCl4/H2O process at 300 °C, which are about three times as high as the typically reported \u00050.05 nm. \u0001Refs. 982, 984, 985, 992, 998, 1127, and 1132\u0002 No clarification has been proposed for the different findings, although the particular reactor used in Refs. 979 and 980 has been concluded to result in systematically higher values than other reactors \u0001Ref. 1133\u0002. ALD is a surface-controlled process, and getting significantly different GPC values in different reactors should, in principle, not be possible, unless the process itself or the chosen parameters do not represent ALD conditions." + }, + { + "nr": "1135", + "ref": "R. L. Puurunen, Chem. Vap. 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This suggestion, however, contradicts the essential requirement of irreversibility for the self-terminating ALD reactions \u0001Sec. III A\u0002." + }, + { + "nr": "1174", + "ref": "Increase in temperature may also turn an irreversible reaction into a reversible reaction. Such effect is not discussed in this work, because through it, the self-terminating characteristics of the reaction are lost." + }, + { + "nr": "1175", + "ref": "In this work, the term ALD window is used for referring to the temperature range where an ALD process fulfills the criterion of self-terminating reactions. The same term has been used for referring to other things also, most particularly, to a temperature range where the GPC is constant \u0001e.g., Refs. 11 and 30\u0002." + }, + { + "nr": "1176", + "ref": "C. Zhao, B. Brijs, F. Dortu, S. De Gendt, M. Caymax, M. Heyns, W. Besling, and J. W. Maes, Proc.-Electrochem. Soc. PV 2003-3, 243 \u00012003\u0002." + }, + { + "nr": "1177", + "ref": "A. Martin Hoyas, J. Schuhmacher, D. Shamiryan, J. Waeterloos, W. Besling, J. P. Celis, and K. Maex, J. Appl. Phys. 95, 381 \u00012004\u0002." + }, + { + "nr": "1178", + "ref": "M. A. Alam and M. L. Green, J. Appl. Phys. 94, 3403 \u00012003\u0002." + }, + { + "nr": "1179", + "ref": "D. Shamiryan, Ph.D. thesis, Katholieke Universiteit Leuven, Belgium, 2004." + }, + { + "nr": "1180", + "ref": "H. Lüth, Surfaces and Interfaces of Solids, 2nd ed. \u0001Springer, Berlin, 1993\u0002." + }, + { + "nr": "1181", + "ref": "Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys., Part 2 25, L868 \u00011986\u0002." + }, + { + "nr": "1182", + "ref": "O. Ueda, K. Kitahara, N. Ohtsuka, A. Hobbs, and M. Ozeki, J. Cryst. Growth 115, 133 \u00011991\u0002." + }, + { + "nr": "1183", + "ref": "J. Kunawicz, P. Jones, and J. A. Hockey, Trans. Faraday Soc. 67, 848 \u00011971\u0002." + }, + { + "nr": "1184", + "ref": "J. Kratochvila, Z. Kadlc, A. Kazda, and Z. Salajka, J. Non-Cryst. Solids 143, 14 \u00011992\u0002." + }, + { + "nr": "1185", + "ref": "D. C. Bertolet and J. W. Rogers, Jr., Chem. Mater. 5, 391 \u00011993\u0002." + }, + { + "nr": "1186", + "ref": "H. Liu, D. C. Bertolet, and J. W. Rogers, Jr., Surf. Sci. 320, 145 \u00011994\u0002." + }, + { + "nr": "1187", + "ref": "B. A. Morrow and A. H. Hardin, J. Phys. Chem. 83, 3135 \u00011979\u0002." + }, + { + "nr": "1188", + "ref": "A. W. Apblett and A. R. Barron, Organometallics 9, 2137 \u00011990\u0002." + }, + { + "nr": "1189", + "ref": "L. M. Yeddanapalli and C. C. Schubert, J. Chem. Phys. 14, 1 \u00011946\u0002." + }, + { + "nr": "1190", + "ref": "S. Haukka and A. Root, J. Phys. Chem. 98, 1695 \u00011994\u0002." + }, + { + "nr": "1191", + "ref": "From the experiments on alumina \u0003Fig. 21\u0001a\u0002\u0004, we have \u0004cAl \u0001nm−2\u0002 =\u00015.9±0.2\u0002+\u0001−0.0050±0.003\u0002T\u0001°C\u0002. From the GPC measured for flat substrates \u0001Fig. 19\u0002, we have \u0004cAl \u0001nm−2\u0002=\u00016.3±0.6\u0002+\u0001 −0.0081±0.0024\u0002T\u0001°C\u0002. These equations are close to the same within the error limits." + }, + { + "nr": "1192", + "ref": "R. Anwander, C. Palm, O. Groeger, and G. Engelhardt, Organometallics 17, 2027 \u00011998\u0002." + }, + { + "nr": "1193", + "ref": "Model II is not able to describe the GPC in the AlMe3/H2O process: for a surface complex with one methyl group, the maximum GPC calculated with Model II is lower than the observed real value \u0001Ref. 992\u0002." + }, + { + "nr": "1194", + "ref": "F. A. Cotton and G. Wilkinson, Basic Inorganic Chemistry \u0001Wiley, New York, 1976\u0002, p. 88." + }, + { + "nr": "1195", + "ref": "H. Knözinger and P. Ratnasamy, Catal. Rev. - Sci. Eng. 17, 31 \u00011978\u0002." + }, + { + "nr": "1196", + "ref": "L. T. Zhuravlev, Langmuir 3, 316 \u00011987\u0002." + }, + { + "nr": "1197", + "ref": "J. E. Crowell, J. Vac. Sci. Technol. A 21, S88 \u00012003\u0002." + }, + { + "nr": "1198", + "ref": "Yu. K. Ezhovskii and P. M. Vainshtein, Zh. Fiz. Khim. 71, 2222 \u00011997\u0002 \u0003Russ. J. Phys. Chem. 71, 2009 \u00011997\u0002\u0004." + }, + { + "nr": "1199", + "ref": "K. L. Choy, Prog. Mater. Sci. 48, 57 \u00012003\u0002." + }, + { + "nr": "1200", + "ref": "In Ref. 1178, chemical kinetics was incorrectly declared as the starting point of modeling how the amount of material deposited by ALD increases with reaction cycles, apparently because the GPC was called a “growth rate \u0001amount/cycle\u0002,” and chemical kinetics describes rates \u0001see Ref. 992\u0002." + }, + { + "nr": "1201", + "ref": "A. A. Malygin, V. F. Dergachev, and S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 59, 430 \u00011986\u0002 \u0003J. Appl. Chem. USSR 59, 392 \u00011986\u0002\u0004." + }, + { + "nr": "1202", + "ref": "P. M. Vainshtein and Yu. K. Ezhovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 71, 227 \u00011998\u0002 \u0003Russ. J. Appl. Chem. 71, 235 \u00011998\u0002\u0004." + }, + { + "nr": "1203", + "ref": "K. Schrijnemakers, P. Van Der Voort, and E. F. Vansant, Phys. Chem. Chem. Phys. 1, 2569 \u00011999\u0002." + }, + { + "nr": "1204", + "ref": "R. G. Gordon, D. Hausmann, E. Kim, and J. Shepard, Chem. Vap. Deposition 9, 73 \u00012003\u0002." + }, + { + "nr": "1205", + "ref": "V. F. Dergachev, A. A. Malygin, and S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 54, 1972 \u00011981\u0002 \u0003J. Appl. Chem. USSR 54, 1722 \u00011981\u0002\u0004." + }, + { + "nr": "1206", + "ref": "High-surface-area substrates have typically a specific surface area of 100–300 m2 g−1 \u0001Refs. 209, 216, and 419\u0002 so, for example, for 10 g of the substrate, a surface area of 1000–3000 m2 has to be reacted. Flat substrates have typically a surface area of 0.003–0.07 m2—from square substrates of 5 5 cm2 in research reactors up to circular substrates with 30-cm diameter in semiconductor processing lines. The surface area to be reacted on high-surface-area substrates can thus be at least six orders of magnitude higher than on flat substrates." + }, + { + "nr": "1207", + "ref": "S. Haukka, A. Kytökivi, E.-L. Lakomaa, U. Lehtovirta, M. Lindblad, V. Lujala, and T. Suntola, in Proceedings of the Sixth International Symposium on Scientific Bases for the Preparation of Heterogeneous Catalysts, Louvain-la-Neuve, Belgium, 5–8 September 1994, edited by G. Poncelet, J. Martens, B. Delmon, P. A. Jacobs, and P. Grange \u0003Stud. Surf. Sci. Catal. 91, 957 \u00011995\u0002\u0004." + } +] diff --git a/Puurunen_2005/step5_reference_matching/gold.json b/Puurunen_2005/step5_reference_matching/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..768d6711ae65afe3dce6a2f9e4e37beef72cd33f --- /dev/null +++ b/Puurunen_2005/step5_reference_matching/gold.json @@ -0,0 +1,5533 @@ +{ + "schema_version": 1, + "task": "step5_reference_matching", + "paper_id": "P252", + "gold_type": "derived_controlled_gold", + "scope": "Explicit numeric bibliography-reference expressions occurring in explicit reference columns of expert-curated gold tables.", + "semantics": { + "row_index": "Zero-based row index in gold.csv, including the header row.", + "column_index": "Zero-based column index in gold.csv.", + "bibliography_index": "The nr value in bibliography/gold.json." + }, + "construction": { + "table_source": "../step2_table_reconstruction/tables/*/gold.csv", + "bibliography_source": "bibliography/gold.json", + "reference_column_rule": "The column header must explicitly be Ref, Refs, Reference, References, Citation(s), Literature, or Source(s).", + "citation_rule": "Only whole-cell numeric bibliography expressions, including lists and ranges, are annotated. Numeric markers embedded inside non-reference content are excluded.", + "excluded_example": "Table-footnote syntax such as mark[1] is not a bibliography citation." + }, + "summary": { + "source_physical_tables": 21, + "tables_with_explicit_reference_column": 13, + "tables_without_explicit_reference_column": 8, + "citation_cells": 538, + "bibliography_links": 1579, + "bibliography_entries": 1207 + }, + "tables": [ + { + "table_id": 1, + "table_key": "page_006_table_001", + "gold_csv": "../step2_table_reconstruction/tables/page_006_table_001/gold.csv", + "reference_column_index": 5, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 2, + "column_index": 5, + "value": "85", + "bibliography_indices": [ + 85 + ] + }, + { + "row_index": 3, + "column_index": 5, + "value": "88 and 89", + "bibliography_indices": [ + 88, + 89 + ] + }, + { + "row_index": 5, + "column_index": 5, + "value": "83, 90, and 91", + "bibliography_indices": [ + 83, + 90, + 91 + ] + }, + { + "row_index": 6, + "column_index": 5, + "value": "90", + "bibliography_indices": [ + 90 + ] + }, + { + "row_index": 7, + "column_index": 5, + "value": "91", + "bibliography_indices": [ + 91 + ] + }, + { + "row_index": 8, + "column_index": 5, + "value": "92", + "bibliography_indices": [ + 92 + ] + }, + { + "row_index": 9, + "column_index": 5, + "value": "93", + "bibliography_indices": [ + 93 + ] + }, + { + "row_index": 10, + "column_index": 5, + "value": "94", + "bibliography_indices": [ + 94 + ] + }, + { + "row_index": 11, + "column_index": 5, + "value": "93", + "bibliography_indices": [ + 93 + ] + }, + { + "row_index": 13, + "column_index": 5, + "value": "78", + "bibliography_indices": [ + 78 + ] + }, + { + "row_index": 14, + "column_index": 5, + "value": "95", + "bibliography_indices": [ + 95 + ] + }, + { + "row_index": 15, + "column_index": 5, + "value": "90", + "bibliography_indices": [ + 90 + ] + }, + { + "row_index": 16, + "column_index": 5, + "value": "90", + "bibliography_indices": [ + 90 + ] + }, + { + "row_index": 17, + "column_index": 5, + "value": "96", + "bibliography_indices": [ + 96 + ] + }, + { + "row_index": 18, + "column_index": 5, + "value": "97–99", + "bibliography_indices": [ + 97, + 98, + 99 + ] + }, + { + "row_index": 19, + "column_index": 5, + "value": "94", + "bibliography_indices": [ + 94 + ] + }, + { + "row_index": 20, + "column_index": 5, + "value": "88", + "bibliography_indices": [ + 88 + ] + }, + { + "row_index": 22, + "column_index": 5, + "value": "82 and 100–102", + "bibliography_indices": [ + 82, + 100, + 101, + 102 + ] + }, + { + "row_index": 23, + "column_index": 5, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 24, + "column_index": 5, + "value": "104 and 105", + "bibliography_indices": [ + 104, + 105 + ] + }, + { + "row_index": 25, + "column_index": 5, + "value": "96", + "bibliography_indices": [ + 96 + ] + }, + { + "row_index": 26, + "column_index": 5, + "value": "88 and 89", + "bibliography_indices": [ + 88, + 89 + ] + }, + { + "row_index": 28, + "column_index": 5, + "value": "1, 79, 80, 100, 101, and 106–113", + "bibliography_indices": [ + 1, + 79, + 80, + 100, + 101, + 106, + 107, + 108, + 109, + 110, + 111, + 112, + 113 + ] + }, + { + "row_index": 29, + "column_index": 5, + "value": "81 and 114", + "bibliography_indices": [ + 81, + 114 + ] + }, + { + "row_index": 30, + "column_index": 5, + "value": "116 and 117", + "bibliography_indices": [ + 116, + 117 + ] + }, + { + "row_index": 31, + "column_index": 5, + "value": "96 and 116", + "bibliography_indices": [ + 96, + 116 + ] + }, + { + "row_index": 32, + "column_index": 5, + "value": "118–122", + "bibliography_indices": [ + 118, + 119, + 120, + 121, + 122 + ] + }, + { + "row_index": 33, + "column_index": 5, + "value": "123–125", + "bibliography_indices": [ + 123, + 124, + 125 + ] + }, + { + "row_index": 34, + "column_index": 5, + "value": "126", + "bibliography_indices": [ + 126 + ] + }, + { + "row_index": 35, + "column_index": 5, + "value": "127", + "bibliography_indices": [ + 127 + ] + }, + { + "row_index": 36, + "column_index": 5, + "value": "128–132", + "bibliography_indices": [ + 128, + 129, + 130, + 131, + 132 + ] + }, + { + "row_index": 37, + "column_index": 5, + "value": "133", + "bibliography_indices": [ + 133 + ] + }, + { + "row_index": 38, + "column_index": 5, + "value": "134", + "bibliography_indices": [ + 134 + ] + }, + { + "row_index": 39, + "column_index": 5, + "value": "88", + "bibliography_indices": [ + 88 + ] + }, + { + "row_index": 41, + "column_index": 5, + "value": "135–137", + "bibliography_indices": [ + 135, + 136, + 137 + ] + }, + { + "row_index": 42, + "column_index": 5, + "value": "117", + "bibliography_indices": [ + 117 + ] + }, + { + "row_index": 43, + "column_index": 5, + "value": "121", + "bibliography_indices": [ + 121 + ] + }, + { + "row_index": 44, + "column_index": 5, + "value": "96", + "bibliography_indices": [ + 96 + ] + }, + { + "row_index": 45, + "column_index": 5, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 47, + "column_index": 5, + "value": "105 and 138–140", + "bibliography_indices": [ + 105, + 138, + 139, + 140 + ] + }, + { + "row_index": 48, + "column_index": 5, + "value": "84", + "bibliography_indices": [ + 84 + ] + }, + { + "row_index": 49, + "column_index": 5, + "value": "84 and 117", + "bibliography_indices": [ + 84, + 117 + ] + }, + { + "row_index": 50, + "column_index": 5, + "value": "141", + "bibliography_indices": [ + 141 + ] + }, + { + "row_index": 51, + "column_index": 5, + "value": "141", + "bibliography_indices": [ + 141 + ] + }, + { + "row_index": 52, + "column_index": 5, + "value": "121", + "bibliography_indices": [ + 121 + ] + }, + { + "row_index": 53, + "column_index": 5, + "value": "96", + "bibliography_indices": [ + 96 + ] + }, + { + "row_index": 54, + "column_index": 5, + "value": "93", + "bibliography_indices": [ + 93 + ] + }, + { + "row_index": 55, + "column_index": 5, + "value": "103", + "bibliography_indices": [ + 103 + ] + }, + { + "row_index": 56, + "column_index": 5, + "value": "142", + "bibliography_indices": [ + 142 + ] + }, + { + "row_index": 57, + "column_index": 5, + "value": "93", + "bibliography_indices": [ + 93 + ] + } + ] + }, + { + "table_id": 2, + "table_key": "page_007_table_002", + "gold_csv": "../step2_table_reconstruction/tables/page_007_table_002/gold.csv", + "reference_column_index": 5, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 2, + "column_index": 5, + "value": "143", + "bibliography_indices": [ + 143 + ] + }, + { + "row_index": 4, + "column_index": 5, + "value": "144", + "bibliography_indices": [ + 144 + ] + }, + { + "row_index": 5, + "column_index": 5, + "value": "86", + "bibliography_indices": [ + 86 + ] + }, + { + "row_index": 6, + "column_index": 5, + "value": "145", + "bibliography_indices": [ + 145 + ] + }, + { + "row_index": 8, + "column_index": 5, + "value": "1 and 146", + "bibliography_indices": [ + 1, + 146 + ] + }, + { + "row_index": 10, + "column_index": 5, + "value": "147", + "bibliography_indices": [ + 147 + ] + }, + { + "row_index": 11, + "column_index": 5, + "value": "145", + "bibliography_indices": [ + 145 + ] + }, + { + "row_index": 12, + "column_index": 5, + "value": "147 and 148", + "bibliography_indices": [ + 147, + 148 + ] + }, + { + "row_index": 13, + "column_index": 5, + "value": "145", + "bibliography_indices": [ + 145 + ] + }, + { + "row_index": 14, + "column_index": 5, + "value": "149", + "bibliography_indices": [ + 149 + ] + }, + { + "row_index": 15, + "column_index": 5, + "value": "147", + "bibliography_indices": [ + 147 + ] + }, + { + "row_index": 16, + "column_index": 5, + "value": "148", + "bibliography_indices": [ + 148 + ] + }, + { + "row_index": 18, + "column_index": 5, + "value": "111 and 150", + "bibliography_indices": [ + 111, + 150 + ] + }, + { + "row_index": 19, + "column_index": 5, + "value": "151", + "bibliography_indices": [ + 151 + ] + }, + { + "row_index": 20, + "column_index": 5, + "value": "151", + "bibliography_indices": [ + 151 + ] + }, + { + "row_index": 22, + "column_index": 5, + "value": "91", + "bibliography_indices": [ + 91 + ] + } + ] + }, + { + "table_id": 3, + "table_key": "page_007_table_003", + "gold_csv": "../step2_table_reconstruction/tables/page_007_table_003/gold.csv", + "reference_column_index": 2, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 1, + "column_index": 2, + "value": "19", + "bibliography_indices": [ + 19 + ] + }, + { + "row_index": 2, + "column_index": 2, + "value": "2", + "bibliography_indices": [ + 2 + ] + }, + { + "row_index": 3, + "column_index": 2, + "value": "154", + "bibliography_indices": [ + 154 + ] + }, + { + "row_index": 4, + "column_index": 2, + "value": "155", + "bibliography_indices": [ + 155 + ] + }, + { + "row_index": 5, + "column_index": 2, + "value": "126", + "bibliography_indices": [ + 126 + ] + }, + { + "row_index": 6, + "column_index": 2, + "value": "117", + "bibliography_indices": [ + 117 + ] + }, + { + "row_index": 7, + "column_index": 2, + "value": "156", + "bibliography_indices": [ + 156 + ] + }, + { + "row_index": 8, + "column_index": 2, + "value": "153", + "bibliography_indices": [ + 153 + ] + }, + { + "row_index": 9, + "column_index": 2, + "value": "1", + "bibliography_indices": [ + 1 + ] + }, + { + "row_index": 10, + "column_index": 2, + "value": "105", + "bibliography_indices": [ + 105 + ] + } + ] + }, + { + "table_id": 4, + "table_key": "page_009_table_004", + "gold_csv": "../step2_table_reconstruction/tables/page_009_table_004/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "85", + "bibliography_indices": [ + 85 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "158", + "bibliography_indices": [ + 158 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "159", + "bibliography_indices": [ + 159 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "88 and 89", + "bibliography_indices": [ + 88, + 89 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "160", + "bibliography_indices": [ + 160 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "161", + "bibliography_indices": [ + 161 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "162–166", + "bibliography_indices": [ + 162, + 163, + 164, + 165, + 166 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "167", + "bibliography_indices": [ + 167 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "168", + "bibliography_indices": [ + 168 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "169 and 170", + "bibliography_indices": [ + 169, + 170 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "76, 77, 83, 90, 91, 91, and 171–184", + "bibliography_indices": [ + 76, + 77, + 83, + 90, + 91, + 171, + 172, + 173, + 174, + 175, + 176, + 177, + 178, + 179, + 180, + 181, + 182, + 183, + 184 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "185 and 186", + "bibliography_indices": [ + 185, + 186 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "173, 181, and 187", + "bibliography_indices": [ + 173, + 181, + 187 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "188 and 189", + "bibliography_indices": [ + 188, + 189 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "92", + "bibliography_indices": [ + 92 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "166, 179, and 190–262", + "bibliography_indices": [ + 166, + 179, + 190, + 191, + 192, + 193, + 194, + 195, + 196, + 197, + 198, + 199, + 200, + 201, + 202, + 203, + 204, + 205, + 206, + 207, + 208, + 209, + 210, + 211, + 212, + 213, + 214, + 215, + 216, + 217, + 218, + 219, + 220, + 221, + 222, + 223, + 224, + 225, + 226, + 227, + 228, + 229, + 230, + 231, + 232, + 233, + 234, + 235, + 236, + 237, + 238, + 239, + 240, + 241, + 242, + 243, + 244, + 245, + 246, + 247, + 248, + 249, + 250, + 251, + 252, + 253, + 254, + 255, + 256, + 257, + 258, + 259, + 260, + 261, + 262 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "263–269", + "bibliography_indices": [ + 263, + 264, + 265, + 266, + 267, + 268, + 269 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "236, 244, 245, and 270–273", + "bibliography_indices": [ + 236, + 244, + 245, + 270, + 271, + 272, + 273 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "274–276", + "bibliography_indices": [ + 274, + 275, + 276 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "266", + "bibliography_indices": [ + 266 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "194", + "bibliography_indices": [ + 194 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "151", + "bibliography_indices": [ + 151 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "277", + "bibliography_indices": [ + 277 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "278", + "bibliography_indices": [ + 278 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "279 and 280", + "bibliography_indices": [ + 279, + 280 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "163", + "bibliography_indices": [ + 163 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "173", + "bibliography_indices": [ + 173 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "173", + "bibliography_indices": [ + 173 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "173 and 181", + "bibliography_indices": [ + 173, + 181 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "173", + "bibliography_indices": [ + 173 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "281", + "bibliography_indices": [ + 281 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "282 and 283", + "bibliography_indices": [ + 282, + 283 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "284 and 285", + "bibliography_indices": [ + 284, + 285 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "209, 216, 283, and 286–292", + "bibliography_indices": [ + 209, + 216, + 283, + 286, + 287, + 288, + 289, + 290, + 291, + 292 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "293 and 294", + "bibliography_indices": [ + 293, + 294 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "295", + "bibliography_indices": [ + 295 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "296–298", + "bibliography_indices": [ + 296, + 297, + 298 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "299–301", + "bibliography_indices": [ + 299, + 300, + 301 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "302", + "bibliography_indices": [ + 302 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "303 and 304", + "bibliography_indices": [ + 303, + 304 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "305–315", + "bibliography_indices": [ + 305, + 306, + 307, + 308, + 309, + 310, + 311, + 312, + 313, + 314, + 315 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "316–320", + "bibliography_indices": [ + 316, + 317, + 318, + 319, + 320 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "309 and 311", + "bibliography_indices": [ + 309, + 311 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "321", + "bibliography_indices": [ + 321 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "322", + "bibliography_indices": [ + 322 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "323 and 324", + "bibliography_indices": [ + 323, + 324 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "320 and 325–330", + "bibliography_indices": [ + 320, + 325, + 326, + 327, + 328, + 329, + 330 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "331 and 332", + "bibliography_indices": [ + 331, + 332 + ] + } + ] + }, + { + "table_id": 5, + "table_key": "page_010_table_005", + "gold_csv": "../step2_table_reconstruction/tables/page_010_table_005/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "94", + "bibliography_indices": [ + 94 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "157", + "bibliography_indices": [ + 157 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "93", + "bibliography_indices": [ + 93 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "78, 90, 95, 96, 195, 214, and 333–337", + "bibliography_indices": [ + 78, + 90, + 95, + 96, + 195, + 214, + 333, + 334, + 335, + 336, + 337 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "335 and 338–341", + "bibliography_indices": [ + 335, + 338, + 339, + 340, + 341 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "97–99", + "bibliography_indices": [ + 97, + 98, + 99 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "342", + "bibliography_indices": [ + 342 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "343", + "bibliography_indices": [ + 343 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "344", + "bibliography_indices": [ + 344 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "345", + "bibliography_indices": [ + 345 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "346", + "bibliography_indices": [ + 346 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "347 and 348", + "bibliography_indices": [ + 347, + 348 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "349–352", + "bibliography_indices": [ + 349, + 350, + 351, + 352 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "352", + "bibliography_indices": [ + 352 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "353", + "bibliography_indices": [ + 353 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "354 and 355", + "bibliography_indices": [ + 354, + 355 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "356", + "bibliography_indices": [ + 356 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "357 and 358", + "bibliography_indices": [ + 357, + 358 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "359", + "bibliography_indices": [ + 359 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "360", + "bibliography_indices": [ + 360 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "361–364", + "bibliography_indices": [ + 361, + 362, + 363, + 364 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "365", + "bibliography_indices": [ + 365 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "366 and 367", + "bibliography_indices": [ + 366, + 367 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "368–375", + "bibliography_indices": [ + 368, + 369, + 370, + 371, + 372, + 373, + 374, + 375 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "376–378", + "bibliography_indices": [ + 376, + 377, + 378 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "379", + "bibliography_indices": [ + 379 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "380–382", + "bibliography_indices": [ + 380, + 381, + 382 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "371, 372, 383, and 384", + "bibliography_indices": [ + 371, + 372, + 383, + 384 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "385", + "bibliography_indices": [ + 385 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "386–394", + "bibliography_indices": [ + 386, + 387, + 388, + 389, + 390, + 391, + 392, + 393, + 394 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "395–399", + "bibliography_indices": [ + 395, + 396, + 397, + 398, + 399 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "394 and 400", + "bibliography_indices": [ + 394, + 400 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "401", + "bibliography_indices": [ + 401 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "370 and 402", + "bibliography_indices": [ + 370, + 402 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "94", + "bibliography_indices": [ + 94 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "157", + "bibliography_indices": [ + 157 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "88", + "bibliography_indices": [ + 88 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "403", + "bibliography_indices": [ + 403 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "188 and 404", + "bibliography_indices": [ + 188, + 404 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "405", + "bibliography_indices": [ + 405 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "406", + "bibliography_indices": [ + 406 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "406", + "bibliography_indices": [ + 406 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "407", + "bibliography_indices": [ + 407 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "82 and 100–103", + "bibliography_indices": [ + 82, + 100, + 101, + 102, + 103 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "96, 104, and 105", + "bibliography_indices": [ + 96, + 104, + 105 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "88 and 89", + "bibliography_indices": [ + 88, + 89 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "408", + "bibliography_indices": [ + 408 + ] + }, + { + "row_index": 57, + "column_index": 4, + "value": "409", + "bibliography_indices": [ + 409 + ] + }, + { + "row_index": 58, + "column_index": 4, + "value": "408 and 410–414", + "bibliography_indices": [ + 408, + 410, + 411, + 412, + 413, + 414 + ] + }, + { + "row_index": 59, + "column_index": 4, + "value": "415", + "bibliography_indices": [ + 415 + ] + }, + { + "row_index": 61, + "column_index": 4, + "value": "416", + "bibliography_indices": [ + 416 + ] + }, + { + "row_index": 62, + "column_index": 4, + "value": "416", + "bibliography_indices": [ + 416 + ] + }, + { + "row_index": 63, + "column_index": 4, + "value": "416", + "bibliography_indices": [ + 416 + ] + } + ] + }, + { + "table_id": 6, + "table_key": "page_011_table_006", + "gold_csv": "../step2_table_reconstruction/tables/page_011_table_006/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "1, 79–81, 96, 100, 101, 106–114, 116–133, 207, 212, 237, 260, 336, and 417–453", + "bibliography_indices": [ + 1, + 79, + 80, + 81, + 96, + 100, + 101, + 106, + 107, + 108, + 109, + 110, + 111, + 112, + 113, + 114, + 116, + 117, + 118, + 119, + 120, + 121, + 122, + 123, + 124, + 125, + 126, + 127, + 128, + 129, + 130, + 131, + 132, + 133, + 207, + 212, + 237, + 260, + 336, + 417, + 418, + 419, + 420, + 421, + 422, + 423, + 424, + 425, + 426, + 427, + 428, + 429, + 430, + 431, + 432, + 433, + 434, + 435, + 436, + 437, + 438, + 439, + 440, + 441, + 442, + 443, + 444, + 445, + 446, + 447, + 448, + 449, + 450, + 451, + 452, + 453 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "267, 269, and 454", + "bibliography_indices": [ + 267, + 269, + 454 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "455", + "bibliography_indices": [ + 455 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "456–458", + "bibliography_indices": [ + 456, + 457, + 458 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "459 and 460", + "bibliography_indices": [ + 459, + 460 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "461", + "bibliography_indices": [ + 461 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "206, 212, and 462–466", + "bibliography_indices": [ + 206, + 212, + 462, + 463, + 464, + 465, + 466 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "212 and 467–474", + "bibliography_indices": [ + 212, + 467, + 468, + 469, + 470, + 471, + 472, + 473, + 474 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "434 and 475", + "bibliography_indices": [ + 434, + 475 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "476", + "bibliography_indices": [ + 476 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "477", + "bibliography_indices": [ + 477 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "478", + "bibliography_indices": [ + 478 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "134", + "bibliography_indices": [ + 134 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "479", + "bibliography_indices": [ + 479 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "480–494", + "bibliography_indices": [ + 480, + 481, + 482, + 483, + 484, + 485, + 486, + 487, + 488, + 489, + 490, + 491, + 492, + 493, + 494 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "205 and 481–483", + "bibliography_indices": [ + 205, + 481, + 482, + 483 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "274", + "bibliography_indices": [ + 274 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "495", + "bibliography_indices": [ + 495 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "496", + "bibliography_indices": [ + 496 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "496", + "bibliography_indices": [ + 496 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "483 and 497", + "bibliography_indices": [ + 483, + 497 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "496", + "bibliography_indices": [ + 496 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "496", + "bibliography_indices": [ + 496 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "498–507", + "bibliography_indices": [ + 498, + 499, + 500, + 501, + 502, + 503, + 504, + 505, + 506, + 507 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "508 and 509", + "bibliography_indices": [ + 508, + 509 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "509–512", + "bibliography_indices": [ + 509, + 510, + 511, + 512 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "509, 511, and 512", + "bibliography_indices": [ + 509, + 511, + 512 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "506", + "bibliography_indices": [ + 506 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "513 and 514", + "bibliography_indices": [ + 513, + 514 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "515 and 516", + "bibliography_indices": [ + 515, + 516 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "88", + "bibliography_indices": [ + 88 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "188, 517, and 518", + "bibliography_indices": [ + 188, + 517, + 518 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "96, 103, 117, 121, and 135–137", + "bibliography_indices": [ + 96, + 103, + 117, + 121, + 135, + 136, + 137 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "519 and 520", + "bibliography_indices": [ + 519, + 520 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "521–523", + "bibliography_indices": [ + 521, + 522, + 523 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "524 and 525", + "bibliography_indices": [ + 524, + 525 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "84, 96, 103, 105, 117, 121, and 138–142", + "bibliography_indices": [ + 84, + 96, + 103, + 105, + 117, + 121, + 138, + 139, + 140, + 141, + 142 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "93", + "bibliography_indices": [ + 93 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "434 and 526–530", + "bibliography_indices": [ + 434, + 526, + 527, + 528, + 529, + 530 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "93", + "bibliography_indices": [ + 93 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "531–533", + "bibliography_indices": [ + 531, + 532, + 533 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "76 and 77", + "bibliography_indices": [ + 76, + 77 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "170 and 534–543", + "bibliography_indices": [ + 170, + 534, + 535, + 536, + 537, + 538, + 539, + 540, + 541, + 542, + 543 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "544", + "bibliography_indices": [ + 544 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "545", + "bibliography_indices": [ + 545 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "546", + "bibliography_indices": [ + 546 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "546", + "bibliography_indices": [ + 546 + ] + } + ] + }, + { + "table_id": 7, + "table_key": "page_012_table_007", + "gold_csv": "../step2_table_reconstruction/tables/page_012_table_007/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "547 and 548", + "bibliography_indices": [ + 547, + 548 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "547–554", + "bibliography_indices": [ + 547, + 548, + 549, + 550, + 551, + 552, + 553, + 554 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "555", + "bibliography_indices": [ + 555 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "546", + "bibliography_indices": [ + 546 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "546", + "bibliography_indices": [ + 546 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "556", + "bibliography_indices": [ + 556 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "557–559", + "bibliography_indices": [ + 557, + 558, + 559 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "560 and 561", + "bibliography_indices": [ + 560, + 561 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "562", + "bibliography_indices": [ + 562 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "560", + "bibliography_indices": [ + 560 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "560", + "bibliography_indices": [ + 560 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "561", + "bibliography_indices": [ + 561 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "546", + "bibliography_indices": [ + 546 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "563", + "bibliography_indices": [ + 563 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "46, 50, and 564", + "bibliography_indices": [ + 46, + 50, + 564 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "565", + "bibliography_indices": [ + 565 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "566–569", + "bibliography_indices": [ + 566, + 567, + 568, + 569 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "570 and 571", + "bibliography_indices": [ + 570, + 571 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "571 and 572", + "bibliography_indices": [ + 571, + 572 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "573", + "bibliography_indices": [ + 573 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "561", + "bibliography_indices": [ + 561 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "574", + "bibliography_indices": [ + 574 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "575 and 576", + "bibliography_indices": [ + 575, + 576 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "577", + "bibliography_indices": [ + 577 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "577", + "bibliography_indices": [ + 577 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "546", + "bibliography_indices": [ + 546 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "578", + "bibliography_indices": [ + 578 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "579", + "bibliography_indices": [ + 579 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "144", + "bibliography_indices": [ + 144 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "580–582", + "bibliography_indices": [ + 580, + 581, + 582 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "583 and 584", + "bibliography_indices": [ + 583, + 584 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "201, 229, 231, and 584–607", + "bibliography_indices": [ + 201, + 229, + 231, + 584, + 585, + 586, + 587, + 588, + 589, + 590, + 591, + 592, + 593, + 594, + 595, + 596, + 597, + 598, + 599, + 600, + 601, + 602, + 603, + 604, + 605, + 606, + 607 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "598", + "bibliography_indices": [ + 598 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "605", + "bibliography_indices": [ + 605 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "608–610", + "bibliography_indices": [ + 608, + 609, + 610 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "2, 171, 611, and 612", + "bibliography_indices": [ + 2, + 171, + 611, + 612 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "613", + "bibliography_indices": [ + 613 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "76, 77, 86, 177, and 614–626", + "bibliography_indices": [ + 76, + 77, + 86, + 177, + 614, + 615, + 616, + 617, + 618, + 619, + 620, + 621, + 622, + 623, + 624, + 625, + 626 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "583 and 627–635", + "bibliography_indices": [ + 583, + 627, + 628, + 629, + 630, + 631, + 632, + 633, + 634, + 635 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "145, 596, 636, and 637", + "bibliography_indices": [ + 145, + 596, + 636, + 637 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "638", + "bibliography_indices": [ + 638 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "415, 608, 615, 616, 618–620, and 639", + "bibliography_indices": [ + 415, + 608, + 615, + 616, + 618, + 619, + 620, + 639 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "578, 611, and 640–655", + "bibliography_indices": [ + 578, + 611, + 640, + 641, + 642, + 643, + 644, + 645, + 646, + 647, + 648, + 649, + 650, + 651, + 652, + 653, + 654, + 655 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "656", + "bibliography_indices": [ + 656 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "657", + "bibliography_indices": [ + 657 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "658–660", + "bibliography_indices": [ + 658, + 659, + 660 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "633–635 and 661–671", + "bibliography_indices": [ + 633, + 634, + 635, + 661, + 662, + 663, + 664, + 665, + 666, + 667, + 668, + 669, + 670, + 671 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "672", + "bibliography_indices": [ + 672 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "638", + "bibliography_indices": [ + 638 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "672", + "bibliography_indices": [ + 672 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "154, 536, 640, 643–645, 647, and 673–679", + "bibliography_indices": [ + 154, + 536, + 640, + 643, + 644, + 645, + 647, + 673, + 674, + 675, + 676, + 677, + 678, + 679 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 57, + "column_index": 4, + "value": "415", + "bibliography_indices": [ + 415 + ] + } + ] + }, + { + "table_id": 8, + "table_key": "page_013_table_008", + "gold_csv": "../step2_table_reconstruction/tables/page_013_table_008/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "681 and 682", + "bibliography_indices": [ + 681, + 682 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "681", + "bibliography_indices": [ + 681 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "683 and 684", + "bibliography_indices": [ + 683, + 684 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "685 and 686", + "bibliography_indices": [ + 685, + 686 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "687", + "bibliography_indices": [ + 687 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "290 and 688–692", + "bibliography_indices": [ + 290, + 688, + 689, + 690, + 691, + 692 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "294, 693, and 694", + "bibliography_indices": [ + 294, + 693, + 694 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "695", + "bibliography_indices": [ + 695 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "2", + "bibliography_indices": [ + 2 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "696", + "bibliography_indices": [ + 696 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "299, 313, and 697–701", + "bibliography_indices": [ + 299, + 313, + 697, + 698, + 699, + 700, + 701 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "702", + "bibliography_indices": [ + 702 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "696 and 703–716", + "bibliography_indices": [ + 696, + 703, + 704, + 705, + 706, + 707, + 708, + 709, + 710, + 711, + 712, + 713, + 714, + 715, + 716 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "303, 304, and 717–721", + "bibliography_indices": [ + 303, + 304, + 717, + 718, + 719, + 720, + 721 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "720", + "bibliography_indices": [ + 720 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "722", + "bibliography_indices": [ + 722 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "722", + "bibliography_indices": [ + 722 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "153, 305–308, 311, 313, 315, 318, 321, 698, 701, and 723–771", + "bibliography_indices": [ + 153, + 305, + 306, + 307, + 308, + 311, + 313, + 315, + 318, + 321, + 698, + 701, + 723, + 724, + 725, + 726, + 727, + 728, + 729, + 730, + 731, + 732, + 733, + 734, + 735, + 736, + 737, + 738, + 739, + 740, + 741, + 742, + 743, + 744, + 745, + 746, + 747, + 748, + 749, + 750, + 751, + 752, + 753, + 754, + 755, + 756, + 757, + 758, + 759, + 760, + 761, + 762, + 763, + 764, + 765, + 766, + 767, + 768, + 769, + 770, + 771 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "772", + "bibliography_indices": [ + 772 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "773–780", + "bibliography_indices": [ + 773, + 774, + 775, + 776, + 777, + 778, + 779, + 780 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "26, 309, 311, 698, 729, 738, 743, and 781–788", + "bibliography_indices": [ + 26, + 309, + 311, + 698, + 729, + 738, + 743, + 781, + 782, + 783, + 784, + 785, + 786, + 787, + 788 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "779 and 789", + "bibliography_indices": [ + 779, + 789 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "324, 790, and 791", + "bibliography_indices": [ + 324, + 790, + 791 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "792", + "bibliography_indices": [ + 792 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "755 and 793", + "bibliography_indices": [ + 755, + 793 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "698", + "bibliography_indices": [ + 698 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "26", + "bibliography_indices": [ + 26 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "779 and 794", + "bibliography_indices": [ + 779, + 794 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1 and 146", + "bibliography_indices": [ + 1, + 146 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "795 and 796", + "bibliography_indices": [ + 795, + 796 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "797–799", + "bibliography_indices": [ + 797, + 798, + 799 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "800 and 801", + "bibliography_indices": [ + 800, + 801 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "382 and 802", + "bibliography_indices": [ + 382, + 802 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "803 and 804", + "bibliography_indices": [ + 803, + 804 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "805 and 806", + "bibliography_indices": [ + 805, + 806 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "807", + "bibliography_indices": [ + 807 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "476", + "bibliography_indices": [ + 476 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "808", + "bibliography_indices": [ + 808 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "808 and 809", + "bibliography_indices": [ + 808, + 809 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "410, 412, and 810–812", + "bibliography_indices": [ + 410, + 412, + 810, + 811, + 812 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "415", + "bibliography_indices": [ + 415 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "813", + "bibliography_indices": [ + 813 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "813", + "bibliography_indices": [ + 813 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "814", + "bibliography_indices": [ + 814 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "219, 237, 814, and 815", + "bibliography_indices": [ + 219, + 237, + 814, + 815 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "816", + "bibliography_indices": [ + 816 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "212, 219, 222, 230, 246, 434, and 817–834", + "bibliography_indices": [ + 212, + 219, + 222, + 230, + 246, + 434, + 817, + 818, + 819, + 820, + 821, + 822, + 823, + 824, + 825, + 826, + 827, + 828, + 829, + 830, + 831, + 832, + 833, + 834 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "825 and 826", + "bibliography_indices": [ + 825, + 826 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "835 and 836", + "bibliography_indices": [ + 835, + 836 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "837", + "bibliography_indices": [ + 837 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "838–841", + "bibliography_indices": [ + 838, + 839, + 840, + 841 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "842 and 843", + "bibliography_indices": [ + 842, + 843 + ] + }, + { + "row_index": 57, + "column_index": 4, + "value": "844", + "bibliography_indices": [ + 844 + ] + } + ] + }, + { + "table_id": 9, + "table_key": "page_014_table_009", + "gold_csv": "../step2_table_reconstruction/tables/page_014_table_009/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "842 and 845", + "bibliography_indices": [ + 842, + 845 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "846", + "bibliography_indices": [ + 846 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "471, 473, 474, and 847–851", + "bibliography_indices": [ + 471, + 473, + 474, + 847, + 848, + 849, + 850, + 851 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "851", + "bibliography_indices": [ + 851 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "852–855", + "bibliography_indices": [ + 852, + 853, + 854, + 855 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "851", + "bibliography_indices": [ + 851 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "855", + "bibliography_indices": [ + 855 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "846 and 856", + "bibliography_indices": [ + 846, + 856 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "846", + "bibliography_indices": [ + 846 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "842", + "bibliography_indices": [ + 842 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "857 and 858", + "bibliography_indices": [ + 857, + 858 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "857", + "bibliography_indices": [ + 857 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "853", + "bibliography_indices": [ + 853 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "857", + "bibliography_indices": [ + 857 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "859", + "bibliography_indices": [ + 859 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "860", + "bibliography_indices": [ + 860 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "860", + "bibliography_indices": [ + 860 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "860", + "bibliography_indices": [ + 860 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "188 and 861", + "bibliography_indices": [ + 188, + 861 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "188 and 404", + "bibliography_indices": [ + 188, + 404 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "403", + "bibliography_indices": [ + 403 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "405", + "bibliography_indices": [ + 405 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "188, 517, and 518", + "bibliography_indices": [ + 188, + 517, + 518 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "184, 206, 465, 820, 862, and 863", + "bibliography_indices": [ + 184, + 206, + 465, + 820, + 862, + 863 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "480, 482, and 864", + "bibliography_indices": [ + 480, + 482, + 864 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "482 and 864", + "bibliography_indices": [ + 482, + 864 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "495", + "bibliography_indices": [ + 495 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "480", + "bibliography_indices": [ + 480 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "495", + "bibliography_indices": [ + 495 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "865", + "bibliography_indices": [ + 865 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "866", + "bibliography_indices": [ + 866 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "867–869", + "bibliography_indices": [ + 867, + 868, + 869 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "866", + "bibliography_indices": [ + 866 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "870 and 871", + "bibliography_indices": [ + 870, + 871 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "872", + "bibliography_indices": [ + 872 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "873", + "bibliography_indices": [ + 873 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "869 and 874", + "bibliography_indices": [ + 869, + 874 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "873", + "bibliography_indices": [ + 873 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "564", + "bibliography_indices": [ + 564 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "875", + "bibliography_indices": [ + 875 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "875", + "bibliography_indices": [ + 875 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "147 and 876", + "bibliography_indices": [ + 147, + 876 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "623", + "bibliography_indices": [ + 623 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "145 and 877–881", + "bibliography_indices": [ + 145, + 877, + 878, + 879, + 880, + 881 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "147–149, 611, and 882–886", + "bibliography_indices": [ + 147, + 148, + 149, + 611, + 882, + 883, + 884, + 885, + 886 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "145 and 662", + "bibliography_indices": [ + 145, + 662 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "147, 148, 170, 534–539, 541–543, 655, 675, 679, and 886–911", + "bibliography_indices": [ + 147, + 148, + 170, + 534, + 535, + 536, + 537, + 538, + 539, + 541, + 542, + 543, + 655, + 675, + 679, + 886, + 887, + 888, + 889, + 890, + 891, + 892, + 893, + 894, + 895, + 896, + 897, + 898, + 899, + 900, + 901, + 902, + 903, + 904, + 905, + 906, + 907, + 908, + 909, + 910, + 911 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "680", + "bibliography_indices": [ + 680 + ] + }, + { + "row_index": 55, + "column_index": 4, + "value": "680 and 912–914", + "bibliography_indices": [ + 680, + 912, + 913, + 914 + ] + }, + { + "row_index": 56, + "column_index": 4, + "value": "915 and 916", + "bibliography_indices": [ + 915, + 916 + ] + } + ] + }, + { + "table_id": 10, + "table_key": "page_015_table_010", + "gold_csv": "../step2_table_reconstruction/tables/page_015_table_010/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "212 and 917–921", + "bibliography_indices": [ + 212, + 917, + 918, + 919, + 920, + 921 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "921", + "bibliography_indices": [ + 921 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "922", + "bibliography_indices": [ + 922 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "923", + "bibliography_indices": [ + 923 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "596, 597, and 924–927", + "bibliography_indices": [ + 596, + 597, + 924, + 925, + 926, + 927 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "928", + "bibliography_indices": [ + 928 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "290, 689, and 690", + "bibliography_indices": [ + 290, + 689, + 690 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "696", + "bibliography_indices": [ + 696 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "712", + "bibliography_indices": [ + 712 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "741, 754, and 929–937", + "bibliography_indices": [ + 741, + 754, + 929, + 930, + 931, + 932, + 933, + 934, + 935, + 936, + 937 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "938–940", + "bibliography_indices": [ + 938, + 939, + 940 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "697 and 699", + "bibliography_indices": [ + 697, + 699 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "941", + "bibliography_indices": [ + 941 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "704, 705, and 717", + "bibliography_indices": [ + 704, + 705, + 717 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "733, 942, and 943", + "bibliography_indices": [ + 733, + 942, + 943 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "780, 931, 933, 944, and 945", + "bibliography_indices": [ + 780, + 931, + 933, + 944, + 945 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "946", + "bibliography_indices": [ + 946 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "726, 947, and 948", + "bibliography_indices": [ + 726, + 947, + 948 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "949 and 950", + "bibliography_indices": [ + 949, + 950 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "2", + "bibliography_indices": [ + 2 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "111, 150, 212, 445, 682, and 951–960", + "bibliography_indices": [ + 111, + 150, + 212, + 445, + 682, + 951, + 952, + 953, + 954, + 955, + 956, + 957, + 958, + 959, + 960 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "959, 961, and 962", + "bibliography_indices": [ + 959, + 961, + 962 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "959", + "bibliography_indices": [ + 959 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "959 and 961–964", + "bibliography_indices": [ + 959, + 961, + 962, + 963, + 964 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "151", + "bibliography_indices": [ + 151 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "151", + "bibliography_indices": [ + 151 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "952", + "bibliography_indices": [ + 952 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "808 and 809", + "bibliography_indices": [ + 808, + 809 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "410 and 965", + "bibliography_indices": [ + 410, + 965 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "46 and 50", + "bibliography_indices": [ + 46, + 50 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "555, 562, 966, and 967", + "bibliography_indices": [ + 555, + 562, + 966, + 967 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "407, 968, and 969", + "bibliography_indices": [ + 407, + 968, + 969 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "546", + "bibliography_indices": [ + 546 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "970", + "bibliography_indices": [ + 970 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "407", + "bibliography_indices": [ + 407 + ] + }, + { + "row_index": 42, + "column_index": 4, + "value": "46 and 50", + "bibliography_indices": [ + 46, + 50 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "971", + "bibliography_indices": [ + 971 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "971", + "bibliography_indices": [ + 971 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "972", + "bibliography_indices": [ + 972 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "973", + "bibliography_indices": [ + 973 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "973", + "bibliography_indices": [ + 973 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "973", + "bibliography_indices": [ + 973 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "973", + "bibliography_indices": [ + 973 + ] + } + ] + }, + { + "table_id": 11, + "table_key": "page_016_table_011", + "gold_csv": "../step2_table_reconstruction/tables/page_016_table_011/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "973", + "bibliography_indices": [ + 973 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "973", + "bibliography_indices": [ + 973 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "973 and 974", + "bibliography_indices": [ + 973, + 974 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "973", + "bibliography_indices": [ + 973 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "975", + "bibliography_indices": [ + 975 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "219, 238, 244, 252, 253, 255–257, 259, 439, 822, 832, 837, 969, and 976–1008", + "bibliography_indices": [ + 219, + 238, + 244, + 252, + 253, + 255, + 256, + 257, + 259, + 439, + 822, + 832, + 837, + 969, + 976, + 977, + 978, + 979, + 980, + 981, + 982, + 983, + 984, + 985, + 986, + 987, + 988, + 989, + 990, + 991, + 992, + 993, + 994, + 995, + 996, + 997, + 998, + 999, + 1000, + 1001, + 1002, + 1003, + 1004, + 1005, + 1006, + 1007, + 1008 + ] + }, + { + "row_index": 13, + "column_index": 4, + "value": "1009 and 1010", + "bibliography_indices": [ + 1009, + 1010 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "990", + "bibliography_indices": [ + 990 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "1011", + "bibliography_indices": [ + 1011 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "837, 989, 994, and 1012", + "bibliography_indices": [ + 837, + 989, + 994, + 1012 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "1012", + "bibliography_indices": [ + 1012 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "994 and 1013–1016", + "bibliography_indices": [ + 994, + 1013, + 1014, + 1015, + 1016 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "1017 and 1018", + "bibliography_indices": [ + 1017, + 1018 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "854", + "bibliography_indices": [ + 854 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "1019", + "bibliography_indices": [ + 1019 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1020", + "bibliography_indices": [ + 1020 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "1021", + "bibliography_indices": [ + 1021 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "407, 857, 858, 1022, and 1023", + "bibliography_indices": [ + 407, + 857, + 858, + 1022, + 1023 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "1023", + "bibliography_indices": [ + 1023 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "857, 1024, and 1025", + "bibliography_indices": [ + 857, + 1024, + 1025 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1026", + "bibliography_indices": [ + 1026 + ] + }, + { + "row_index": 28, + "column_index": 4, + "value": "1026", + "bibliography_indices": [ + 1026 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "244, 857, 1005, and 1027–1029", + "bibliography_indices": [ + 244, + 857, + 1005, + 1027, + 1028, + 1029 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1018", + "bibliography_indices": [ + 1018 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1030", + "bibliography_indices": [ + 1030 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1031–1033", + "bibliography_indices": [ + 1031, + 1032, + 1033 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "860", + "bibliography_indices": [ + 860 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "860", + "bibliography_indices": [ + 860 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "860", + "bibliography_indices": [ + 860 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "406", + "bibliography_indices": [ + 406 + ] + }, + { + "row_index": 38, + "column_index": 4, + "value": "1034 and 1035", + "bibliography_indices": [ + 1034, + 1035 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "406", + "bibliography_indices": [ + 406 + ] + }, + { + "row_index": 40, + "column_index": 4, + "value": "407", + "bibliography_indices": [ + 407 + ] + }, + { + "row_index": 41, + "column_index": 4, + "value": "188", + "bibliography_indices": [ + 188 + ] + }, + { + "row_index": 43, + "column_index": 4, + "value": "76, 77, 91, 174, 183, 212, 614, 822, 863, 976, and 1036–1040", + "bibliography_indices": [ + 76, + 77, + 91, + 174, + 183, + 212, + 614, + 822, + 863, + 976, + 1036, + 1037, + 1038, + 1039, + 1040 + ] + }, + { + "row_index": 44, + "column_index": 4, + "value": "188 and 1041", + "bibliography_indices": [ + 188, + 1041 + ] + }, + { + "row_index": 45, + "column_index": 4, + "value": "1042", + "bibliography_indices": [ + 1042 + ] + }, + { + "row_index": 46, + "column_index": 4, + "value": "1043", + "bibliography_indices": [ + 1043 + ] + }, + { + "row_index": 47, + "column_index": 4, + "value": "178, 184, 206, 207, 212, 465, 820, 863, 978, and 1044–1047", + "bibliography_indices": [ + 178, + 184, + 206, + 207, + 212, + 465, + 820, + 863, + 978, + 1044, + 1045, + 1046, + 1047 + ] + }, + { + "row_index": 48, + "column_index": 4, + "value": "1048", + "bibliography_indices": [ + 1048 + ] + }, + { + "row_index": 49, + "column_index": 4, + "value": "1049", + "bibliography_indices": [ + 1049 + ] + }, + { + "row_index": 50, + "column_index": 4, + "value": "466", + "bibliography_indices": [ + 466 + ] + }, + { + "row_index": 51, + "column_index": 4, + "value": "1050", + "bibliography_indices": [ + 1050 + ] + }, + { + "row_index": 52, + "column_index": 4, + "value": "1050", + "bibliography_indices": [ + 1050 + ] + }, + { + "row_index": 53, + "column_index": 4, + "value": "480 and 1051", + "bibliography_indices": [ + 480, + 1051 + ] + }, + { + "row_index": 54, + "column_index": 4, + "value": "1051", + "bibliography_indices": [ + 1051 + ] + } + ] + }, + { + "table_id": 12, + "table_key": "page_017_table_012", + "gold_csv": "../step2_table_reconstruction/tables/page_017_table_012/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 1, + "column_index": 4, + "value": "495", + "bibliography_indices": [ + 495 + ] + }, + { + "row_index": 2, + "column_index": 4, + "value": "1052", + "bibliography_indices": [ + 1052 + ] + }, + { + "row_index": 3, + "column_index": 4, + "value": "1052", + "bibliography_indices": [ + 1052 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1053–1055", + "bibliography_indices": [ + 1053, + 1054, + 1055 + ] + }, + { + "row_index": 5, + "column_index": 4, + "value": "1052", + "bibliography_indices": [ + 1052 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1056 and 1057", + "bibliography_indices": [ + 1056, + 1057 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "1058", + "bibliography_indices": [ + 1058 + ] + }, + { + "row_index": 8, + "column_index": 4, + "value": "1059 and 1060", + "bibliography_indices": [ + 1059, + 1060 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "1061", + "bibliography_indices": [ + 1061 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "1061", + "bibliography_indices": [ + 1061 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "515 and 1062", + "bibliography_indices": [ + 515, + 1062 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1063", + "bibliography_indices": [ + 1063 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "1064", + "bibliography_indices": [ + 1064 + ] + }, + { + "row_index": 15, + "column_index": 4, + "value": "1064", + "bibliography_indices": [ + 1064 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1065", + "bibliography_indices": [ + 1065 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "490, 491, 1066, and 1067", + "bibliography_indices": [ + 490, + 491, + 1066, + 1067 + ] + }, + { + "row_index": 18, + "column_index": 4, + "value": "1068–1070", + "bibliography_indices": [ + 1068, + 1069, + 1070 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "1071–1073", + "bibliography_indices": [ + 1071, + 1072, + 1073 + ] + }, + { + "row_index": 20, + "column_index": 4, + "value": "1074", + "bibliography_indices": [ + 1074 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "1075", + "bibliography_indices": [ + 1075 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "249, 602, 1066, and 1076–1080", + "bibliography_indices": [ + 249, + 602, + 1066, + 1076, + 1077, + 1078, + 1079, + 1080 + ] + }, + { + "row_index": 24, + "column_index": 4, + "value": "1081", + "bibliography_indices": [ + 1081 + ] + }, + { + "row_index": 26, + "column_index": 4, + "value": "867, 869, and 1082", + "bibliography_indices": [ + 867, + 869, + 1082 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "561", + "bibliography_indices": [ + 561 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "912 and 914", + "bibliography_indices": [ + 912, + 914 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1083", + "bibliography_indices": [ + 1083 + ] + }, + { + "row_index": 32, + "column_index": 4, + "value": "1083", + "bibliography_indices": [ + 1083 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1083", + "bibliography_indices": [ + 1083 + ] + }, + { + "row_index": 34, + "column_index": 4, + "value": "1084", + "bibliography_indices": [ + 1084 + ] + }, + { + "row_index": 35, + "column_index": 4, + "value": "1084", + "bibliography_indices": [ + 1084 + ] + }, + { + "row_index": 36, + "column_index": 4, + "value": "1083 and 1084", + "bibliography_indices": [ + 1083, + 1084 + ] + }, + { + "row_index": 37, + "column_index": 4, + "value": "1083 and 1084", + "bibliography_indices": [ + 1083, + 1084 + ] + }, + { + "row_index": 39, + "column_index": 4, + "value": "1085", + "bibliography_indices": [ + 1085 + ] + } + ] + }, + { + "table_id": 13, + "table_key": "page_018_table_013", + "gold_csv": "../step2_table_reconstruction/tables/page_018_table_013/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "citation_cells": [ + { + "row_index": 2, + "column_index": 4, + "value": "89", + "bibliography_indices": [ + 89 + ] + }, + { + "row_index": 4, + "column_index": 4, + "value": "1086", + "bibliography_indices": [ + 1086 + ] + }, + { + "row_index": 6, + "column_index": 4, + "value": "1087", + "bibliography_indices": [ + 1087 + ] + }, + { + "row_index": 7, + "column_index": 4, + "value": "1088–1097", + "bibliography_indices": [ + 1088, + 1089, + 1090, + 1091, + 1092, + 1093, + 1094, + 1095, + 1096, + 1097 + ] + }, + { + "row_index": 9, + "column_index": 4, + "value": "1098", + "bibliography_indices": [ + 1098 + ] + }, + { + "row_index": 10, + "column_index": 4, + "value": "1099", + "bibliography_indices": [ + 1099 + ] + }, + { + "row_index": 11, + "column_index": 4, + "value": "1100", + "bibliography_indices": [ + 1100 + ] + }, + { + "row_index": 12, + "column_index": 4, + "value": "1101", + "bibliography_indices": [ + 1101 + ] + }, + { + "row_index": 14, + "column_index": 4, + "value": "1102", + "bibliography_indices": [ + 1102 + ] + }, + { + "row_index": 16, + "column_index": 4, + "value": "1103 and 1104", + "bibliography_indices": [ + 1103, + 1104 + ] + }, + { + "row_index": 17, + "column_index": 4, + "value": "1105", + "bibliography_indices": [ + 1105 + ] + }, + { + "row_index": 19, + "column_index": 4, + "value": "1106–1108", + "bibliography_indices": [ + 1106, + 1107, + 1108 + ] + }, + { + "row_index": 21, + "column_index": 4, + "value": "1109–1111", + "bibliography_indices": [ + 1109, + 1110, + 1111 + ] + }, + { + "row_index": 22, + "column_index": 4, + "value": "1111", + "bibliography_indices": [ + 1111 + ] + }, + { + "row_index": 23, + "column_index": 4, + "value": "1111", + "bibliography_indices": [ + 1111 + ] + }, + { + "row_index": 25, + "column_index": 4, + "value": "711 and 1112–1114", + "bibliography_indices": [ + 711, + 1112, + 1113, + 1114 + ] + }, + { + "row_index": 27, + "column_index": 4, + "value": "1091 and 1115–1121", + "bibliography_indices": [ + 1091, + 1115, + 1116, + 1117, + 1118, + 1119, + 1120, + 1121 + ] + }, + { + "row_index": 29, + "column_index": 4, + "value": "1091, 1119, 1122, and 1123", + "bibliography_indices": [ + 1091, + 1119, + 1122, + 1123 + ] + }, + { + "row_index": 30, + "column_index": 4, + "value": "1124", + "bibliography_indices": [ + 1124 + ] + }, + { + "row_index": 31, + "column_index": 4, + "value": "1124", + "bibliography_indices": [ + 1124 + ] + }, + { + "row_index": 33, + "column_index": 4, + "value": "1125", + "bibliography_indices": [ + 1125 + ] + } + ] + } + ], + "tables_without_explicit_reference_column": [ + { + "table_id": 14, + "table_key": "page_020_table_014", + "gold_csv": "../step2_table_reconstruction/tables/page_020_table_014/gold.csv" + }, + { + "table_id": 15, + "table_key": "page_021_table_015", + "gold_csv": "../step2_table_reconstruction/tables/page_021_table_015/gold.csv" + }, + { + "table_id": 16, + "table_key": "page_021_table_016", + "gold_csv": "../step2_table_reconstruction/tables/page_021_table_016/gold.csv" + }, + { + "table_id": 17, + "table_key": "page_021_table_017", + "gold_csv": "../step2_table_reconstruction/tables/page_021_table_017/gold.csv" + }, + { + "table_id": 18, + "table_key": "page_021_table_018", + "gold_csv": "../step2_table_reconstruction/tables/page_021_table_018/gold.csv" + }, + { + "table_id": 19, + "table_key": "page_022_table_019", + "gold_csv": "../step2_table_reconstruction/tables/page_022_table_019/gold.csv" + }, + { + "table_id": 20, + "table_key": "page_022_table_020", + "gold_csv": "../step2_table_reconstruction/tables/page_022_table_020/gold.csv" + }, + { + "table_id": 21, + "table_key": "page_022_table_021", + "gold_csv": "../step2_table_reconstruction/tables/page_022_table_021/gold.csv" + } + ] +} diff --git a/Puurunen_2005/step6_reference_resolution/gold.json b/Puurunen_2005/step6_reference_resolution/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..e8d3d6e1d2c1c9eca98246b8ef65f9fc7c465b6c --- /dev/null +++ b/Puurunen_2005/step6_reference_resolution/gold.json @@ -0,0 +1,16941 @@ +{ + "paper": "P252", + "status": "validated", + "source_independent_of_step6": true, + "gold_source": "authoritative LaTeX bibliography + BibTeX", + "record_count": 996, + "records": [ + { + "paper": "P252", + "gold_index": 1, + "step4_index": 1, + "raw_reference": "A. M. Shevjakov, G. N. Kuznetsova, and V. B. Aleskovskii, in Chemistry of High-Temperature Materials, Proceedings of the Second USSR Conference on High-Temperature Chemistry of Oxides, Leningrad, USSR, 26–29 November 1965 \u0001Nauka, Leningrad, USSR, 1967\u0002, pp. 149–155, in Russian.", + "bibtex_key": "Shevjakov:67", + "source_entry_type": "inproceedings", + "gold_doi": "", + "gold_title": "Interaction of titanium and germanium tetrachlorides with hydroxylated silicon dioxide", + "gold_authors": "A. M Shevjakov and G. N. Kuznetsova and V. B. Aleskovskii", + "gold_year": "1967", + "gold_venue": "Chemistry of high temperature materials. Proceedings of 2nd USSR conference on high temperature chemistry of oxides, November 26-29, 1965, Leningrad, USSR", + "gold_volume": "", + "gold_issue": "", + "gold_pages": "149-155", + "source_bibitem_position": 1 + }, + { + "paper": "P252", + "gold_index": 2, + "step4_index": 2, + "raw_reference": "T. Suntola and J. Antson, U.S. Patent No. 4,058,430 \u000115 November 1977\u0002.", + "bibtex_key": "Suntola:77", + "source_entry_type": "misc", + "gold_doi": "", + "gold_title": "Method for producing compound thin films", + "gold_authors": "T. Suntola and J. Antson", + "gold_year": "", + "gold_venue": "", + "gold_volume": "", + "gold_issue": "", + "gold_pages": "", + "source_bibitem_position": 2 + }, + { + "paper": "P252", + "gold_index": 19, + "step4_index": 19, + "raw_reference": "M. Leskelä, Acta Polytech. Scand., Chem. Technol. Ser. 195, 67 \u00011990\u0002.", + "bibtex_key": "Leskela:90-2", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Atomic layer epitaxy in the growth of polycrystalline and amorphous films", + "gold_authors": "M. Leskel a", + "gold_year": "1990", + "gold_venue": "Acta Polytech. Scand., Chem. Technol. Ser.", + "gold_volume": "195", + "gold_issue": "", + "gold_pages": "67-80", + "source_bibitem_position": 19 + }, + { + "paper": "P252", + "gold_index": 26, + "step4_index": 26, + "raw_reference": "M. Ozeki, Mater. Sci. Rep. 8, 97 \u00011992\u0002.", + "bibtex_key": "Ozeki:92", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Atomic layer epitaxy of III -- V compounds using metalorganic and hydride sources", + "gold_authors": "M. Ozeki", + "gold_year": "1992", + "gold_venue": "Mater. Sci. Rep.", + "gold_volume": "8", + "gold_issue": "", + "gold_pages": "97-146", + "source_bibitem_position": 26 + }, + { + "paper": "P252", + "gold_index": 46, + "step4_index": 46, + "raw_reference": "S. Haukka and T. Suntola, Interface Sci. 75, 119 \u00011997\u0002.", + "bibtex_key": "Haukka:97-2", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Advanced materials processing by adsorption control", + "gold_authors": "S. Haukka and T. Suntola", + "gold_year": "1997", + "gold_venue": "Interface Sci.", + "gold_volume": "75", + "gold_issue": "", + "gold_pages": "119--128", + "source_bibitem_position": 46 + }, + { + "paper": "P252", + "gold_index": 50, + "step4_index": 50, + "raw_reference": "S. Haukka, E.-L. Lakomaa, and T. Suntola, Stud. Surf. Sci. Catal. 120A, 715 \u00011999\u0002.", + "bibtex_key": "Haukka:99", + "source_entry_type": "incollection", + "gold_doi": "", + "gold_title": "Adsorption controlled preparation of heterogeneous catalysts", + "gold_authors": "S. Haukka and E.-L. Lakomaa and T. Suntola", + "gold_year": "1999", + "gold_venue": "Adsorption and its Applications in Industry and Environmental Protection", + "gold_volume": "120A", + "gold_issue": "", + "gold_pages": "715--750", + "source_bibitem_position": 50 + }, + { + "paper": "P252", + "gold_index": 76, + "step4_index": 69, + "raw_reference": "T. S. Suntola, A. J. Pakkala, and S. G. Lindfors, U.S. Patent No. 4,389,973 \u000128 June 1983\u0002.", + "bibtex_key": "Suntola:83-2", + "source_entry_type": "misc", + "gold_doi": "", + "gold_title": "Apparatus for performing growth of thin films", + "gold_authors": "T. S. Suntola and A. J. Pakkala and S. G. Lindfors", + "gold_year": "", + "gold_venue": "", + "gold_volume": "", + "gold_issue": "", + "gold_pages": "", + "source_bibitem_position": 76 + }, + { + "paper": "P252", + "gold_index": 77, + "step4_index": 70, + "raw_reference": "T. S. Suntola, A. J. Pakkala, and S. G. Lindfors, U.S. Patent No. 4,413,022 \u00011 November 1983\u0002.", + "bibtex_key": "Suntola:83-1", + "source_entry_type": "misc", + "gold_doi": "", + "gold_title": "Method for performing growth of thin films", + "gold_authors": "T. S. Suntola and A. J. Pakkala and S. G. Lindfors", + "gold_year": "", + "gold_venue": "", + "gold_volume": "", + "gold_issue": "", + "gold_pages": "", + "source_bibitem_position": 77 + }, + { + "paper": "P252", + "gold_index": 78, + "step4_index": 71, + "raw_reference": "G. V. Sveshnikova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 43, 1150 \u00011970\u0002 \u0003J. Appl. Chem. USSR 43, 1155 \u00011970\u0002\u0004.", + "bibtex_key": "Sveshnikova:70", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Formation of a silica layer of predetermined thickness on silicon by the molecular layering method", + "gold_authors": "G. V. Sveshnikova and S. I. Kol'tsov and V. B. Aleskovskii", + "gold_year": "1970", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "43", + "gold_issue": "", + "gold_pages": "1150--1152", + "source_bibitem_position": 78 + }, + { + "paper": "P252", + "gold_index": 79, + "step4_index": 72, + "raw_reference": "S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1023 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 975 \u00011969\u0002\u0004.", + "bibtex_key": "Koltsov:69-1", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Preparation and investigation of the products of interaction between titanium tetrachloride and silica gel", + "gold_authors": "S. I. Kol'tsov", + "gold_year": "1969", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "42", + "gold_issue": "", + "gold_pages": "1023--1028", + "source_bibitem_position": 79 + }, + { + "paper": "P252", + "gold_index": 80, + "step4_index": 73, + "raw_reference": "S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 43, 1956 \u00011970\u0002 \u0003J. Appl. Chem. USSR 43, 1976 \u00011970\u0002\u0004.", + "bibtex_key": "Koltsov:70", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Changes in the structure of silica gel during formation of a layer of titanium dioxide on its surface", + "gold_authors": "S. I. Kol'tsov", + "gold_year": "1970", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "43", + "gold_issue": "", + "gold_pages": "1956-1959", + "source_bibitem_position": 80 + }, + { + "paper": "P252", + "gold_index": 81, + "step4_index": 74, + "raw_reference": "G. V. Sveshnikova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 43, 430 \u00011970\u0002 \u0003J. Appl. Chem. USSR 43, 432 \u00011970\u0002\u0004.", + "bibtex_key": "Sveshnikova:70-2", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Interaction of titanium tetrachloride with hydroxylated silicon surfaces", + "gold_authors": "G. V. Sveshnikova and S. I. Kol'tsov and V. B. Aleskovskii", + "gold_year": "1970", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "43", + "gold_issue": "", + "gold_pages": "430-431", + "source_bibitem_position": 81 + }, + { + "paper": "P252", + "gold_index": 82, + "step4_index": 75, + "raw_reference": "S. I. Kol’tsov, V. B. Aleskovskii, A. N. Volkova, and V. M. Smirnov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 47, 1254 \u00011974\u0002 \u0003J. Appl. Chem. USSR 47, 1292 \u00011974\u0002\u0004.", + "bibtex_key": "Koltsov:74", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Change in the structure of silica gel in the process of the formation of a layer of phosphorus pentoxide on its surface", + "gold_authors": "S. I. Kol'tsov and V. B. Aleskovskii and A. N. Volkova and V. M. Smirnov", + "gold_year": "1974", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "47", + "gold_issue": "", + "gold_pages": "1254-1258", + "source_bibitem_position": 82 + }, + { + "paper": "P252", + "gold_index": 83, + "step4_index": 76, + "raw_reference": "S. I. Kol’tsov, V. B. Kopylov, V. M. Smirnov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 49, 516 \u00011976\u0002 \u0003J. Appl. Chem. USSR 49, 525 \u00011976\u0002\u0004.", + "bibtex_key": "Koltsov:76-2", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Synthesis and investigation of aluminum--oxygen layers on the surface of silica", + "gold_authors": "S. I. Kol'tsov and V. B. Kopylov and V. M. Smirnov and V. B. Aleskovskii", + "gold_year": "1976", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "49", + "gold_issue": "", + "gold_pages": "516-519", + "source_bibitem_position": 83 + }, + { + "paper": "P252", + "gold_index": 84, + "step4_index": 77, + "raw_reference": "A. P. Nechiporenko, T. M. Sukhareva, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 51, 2447 \u00011978\u0002 \u0003J. Appl. Chem. USSR 51, 2333 \u00011978\u0002\u0004.", + "bibtex_key": "Nechiporenko:78", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Ultramicrochemical investigation of chromium oxide layers synthesized by molecular layering on single-crystal germanium and silicon surfaces", + "gold_authors": "A. P. Nechiporenko and T. M. Sukhareva and A. A. Malygin and S. I. Kol'tsov and V. B. Aleskovskii", + "gold_year": "1978", + "gold_venue": "Zh. Prikl. Kim.", + "gold_volume": "51", + "gold_issue": "", + "gold_pages": "2447-2451", + "source_bibitem_position": 84 + }, + { + "paper": "P252", + "gold_index": 85, + "step4_index": 78, + "raw_reference": "S. I. Kol’tsov, T. V. Tuz, and A. N. Volkova, Zh. Prikl. Khim. \u0001S.- Peterburg\u0002 52, 2196 \u00011979\u0002 \u0003J. Appl. Chem. USSR 52, 2074 \u00011979\u0002\u0004.", + "bibtex_key": "Koltsov:79", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Molecular layering of boron oxide on the surface of silica", + "gold_authors": "S. I. Kol'tsov and T. V. Tuz and A. N. Volkova", + "gold_year": "1979", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "52", + "gold_issue": "", + "gold_pages": "2196--2199", + "source_bibitem_position": 85 + }, + { + "paper": "P252", + "gold_index": 86, + "step4_index": 79, + "raw_reference": "N. A. Stepanova, V. D. Kupriyanov, and A. A. Malygin, Izv. Akad. Nauk SSSR, Neorg. Mater. 23, 377 \u00011987\u0002 \u0003Inorg. Mater. 23, 331 \u00011987\u0002\u0004.", + "bibtex_key": "Stepanova:87", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Structure of a zinc sulfide film prepared by molecular stratification on the surface of disperse silica", + "gold_authors": "N. A. Stepanova and V. D. Kupriyanov and A. A. Malygin", + "gold_year": "1987", + "gold_venue": "Neorg. Mater.", + "gold_volume": "23", + "gold_issue": "", + "gold_pages": "377--381", + "source_bibitem_position": 86 + }, + { + "paper": "P252", + "gold_index": 88, + "step4_index": 81, + "raw_reference": "V. V. Brei, V. A. Kasperskii, and N. E. Gulyanitskaya, React. Kinet. Catal. Lett. 50, 415 \u00011993\u0002.", + "bibtex_key": "Brei:93", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Synthesis and study of boron phosphate and titanium silicate compounds on silica surface", + "gold_authors": "V. V. Brei and V. A. Kasperskii and N. E. Gulyanitskaya", + "gold_year": "1993", + "gold_venue": "React. Kinet. Catal. Lett.", + "gold_volume": "50", + "gold_issue": "", + "gold_pages": "415-421", + "source_bibitem_position": 88 + }, + { + "paper": "P252", + "gold_index": 89, + "step4_index": 82, + "raw_reference": "V. M. Gun’ko, Kinet. Katal. 34, 463 \u00011993\u0002 \u0003Kinet. Catal. 34, 406 \u00011993\u0002\u0004.", + "bibtex_key": "Gunko:93", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Investigation of molecular deposition reactions in the formation of boron phosphate on the surface of dispersed silica", + "gold_authors": "V. M. Gun'ko", + "gold_year": "1993", + "gold_venue": "Kinet. Katal.", + "gold_volume": "34", + "gold_issue": "", + "gold_pages": "463-466", + "source_bibitem_position": 89 + }, + { + "paper": "P252", + "gold_index": 90, + "step4_index": 83, + "raw_reference": "S. I. Kol’tsov, V. M. Smirnov, R. R. Rachkovskii, T. V. Malalaeva, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 51, 2596 \u00011978\u0002 \u0003J. Appl. Chem. USSR 51, 2475 \u00011978\u0002\u0004.", + "bibtex_key": "Koltsov:78", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Study of aluminosilicate systems synthesized by the molecular-layering method", + "gold_authors": "S. I. Kol'tsov and V. M. Smirnov and R. R. Rachkovskii and T. V. Malalaeva and V. B. Aleskovskii", + "gold_year": "1978", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "51", + "gold_issue": "", + "gold_pages": "2596--2598", + "source_bibitem_position": 90 + }, + { + "paper": "P252", + "gold_index": 91, + "step4_index": 84, + "raw_reference": "Yu. K. Ezhovskii and A. I. Klusevich, Neorg. Mater. 39, 1230 \u00012003\u0002 \u0003Inorg. Mater. 39, 1062 \u00012003\u0002\u0004.", + "bibtex_key": "Ezhovskii:03", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Fabrication and dielectric properties of multilayer Ta _2 O _5 /Al _2 O _3 nanolaminates", + "gold_authors": ". K. Ezhovskii and A. I. Klusevich", + "gold_year": "2003", + "gold_venue": "Neorg. Mater.", + "gold_volume": "39", + "gold_issue": "", + "gold_pages": "1230--1235", + "source_bibitem_position": 91 + }, + { + "paper": "P252", + "gold_index": 92, + "step4_index": 85, + "raw_reference": "G. V. Anikeev, Yu. K. Ezhovskii, and S. I. Kol’tsov, Izv. Akad. Nauk SSSR, Neorg. Mater. 24, 619 \u00011988\u0002 \u0003Inorg. Mater. 24, 514 \u00011988\u0002\u0004.", + "bibtex_key": "Anikeev:88", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "FORMATION OF THIN ALUMINUM-OXIDE FILMS", + "gold_authors": "G. V. Anikeev and . K. Ezhovskii and S. I. Kol'tsov", + "gold_year": "1988", + "gold_venue": "Neorg. Mater.", + "gold_volume": "24", + "gold_issue": "", + "gold_pages": "619-621", + "source_bibitem_position": 92 + }, + { + "paper": "P252", + "gold_index": 93, + "step4_index": 86, + "raw_reference": "V. E. Drozd, A. A. Tulub, V. B. Aleskovskii, and D. V. Korol’kov, Appl. Surf. Sci. 82/83, 587 \u00011994\u0002.", + "bibtex_key": "Drozd:94-2", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Synthesis of oxide superalloys by ML--ALE method", + "gold_authors": "V. E. Drozd and A. A. Tulub and V. B. Aleskovskii and D. V. Korol'kov", + "gold_year": "1994", + "gold_venue": "Appl. Surf. Sci.", + "gold_volume": "82/83", + "gold_issue": "", + "gold_pages": "587-590", + "source_bibitem_position": 93 + }, + { + "paper": "P252", + "gold_index": 94, + "step4_index": 87, + "raw_reference": "V. V. Brei, V. A. Kasperskii, and A. A. Chuiko, Zh. Prikl. Khim. \u0001S.- Peterburg\u0002 69, 378 \u00011996\u0002 \u0003Russ. J. Appl. Chem. 69, 335 \u00011996\u0002\u0004.", + "bibtex_key": "Brei:96", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Synthesis and study of aluminosilicate compounds on the silica surface", + "gold_authors": "V. V. Brei and V. A. Kasperskii and A. A. Chuiko", + "gold_year": "1996", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "69", + "gold_issue": "", + "gold_pages": "378--381", + "source_bibitem_position": 94 + }, + { + "paper": "P252", + "gold_index": 95, + "step4_index": 88, + "raw_reference": "M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 47, 2332 \u00011974\u0002 \u0003J. Appl. Chem. USSR 47, 2390 \u00011974\u0002\u0004.", + "bibtex_key": "Eremeeva:74", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium", + "gold_authors": "M. A. Eremeeva and A. P. Nechiporenko and G. N. Kuznetsova and S. I. Kol'tsov and V. B. Aleskovskii", + "gold_year": "1974", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "47", + "gold_issue": "", + "gold_pages": "2332--2333", + "source_bibitem_position": 95 + }, + { + "paper": "P252", + "gold_index": 96, + "step4_index": 89, + "raw_reference": "L. V. Miroshnichenko, A. A. Malygin, and S. I. Kol’tsov, Ogneupory 26, 22 \u00011985\u0002 \u0003Refractories 26, 82 \u00011985\u0002\u0004.", + "bibtex_key": "Miroshnichenko:85", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Thermal oxidation of silicon carbide with surface modification by the molecular layering method", + "gold_authors": "L. V. Miroshnichenko and A. A. Malygin and S. I. Kol'tsov", + "gold_year": "1985", + "gold_venue": "Ogneupory", + "gold_volume": "26", + "gold_issue": "", + "gold_pages": "22--24", + "source_bibitem_position": 96 + }, + { + "paper": "P252", + "gold_index": 97, + "step4_index": 90, + "raw_reference": "S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 38, 1384 \u00011965\u0002 \u0003J. Appl. Chem. USSR 38, 1352 \u00011965\u0002\u0004.", + "bibtex_key": "Koltsov:65", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Interaction of trichlorosilane with silica gel", + "gold_authors": "S. I. Kol'tsov", + "gold_year": "1965", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "38", + "gold_issue": "", + "gold_pages": "1384-1384", + "source_bibitem_position": 97 + }, + { + "paper": "P252", + "gold_index": 98, + "step4_index": 91, + "raw_reference": "S. I. Kol’tsov, G. N. Kuznetsova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 40, 2774 \u00011967\u0002 \u0003J. Appl. Chem. USSR 40, 2644 \u00011967\u0002\u0004.", + "bibtex_key": "Koltsov:67-2", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Study of the stoichiometry of the products formed in the reaction of trichlorosilane with the functional groups of polysilisic acid", + "gold_authors": "S. I. Kol'tsov and G. N. Kuznetsova and V. B. Aleskovskii", + "gold_year": "1967", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "40", + "gold_issue": "", + "gold_pages": "2774--2777", + "source_bibitem_position": 98 + }, + { + "paper": "P252", + "gold_index": 99, + "step4_index": 92, + "raw_reference": "S. I. Kol’tsov, Zh. Obshch. Khim. 71, 1616 \u00012001\u0002 \u0003Russ. J. Gen. Chem. 71, 1531 \u00012001\u0002\u0004.", + "bibtex_key": "Koltsov:01", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Oxidation of polyhydrosiloxane prepared by molecular layering", + "gold_authors": "S. I. Kol'tsov", + "gold_year": "2001", + "gold_venue": "Zh. Obshch. Khim.", + "gold_volume": "71", + "gold_issue": "", + "gold_pages": "1616--1621", + "source_bibitem_position": 99 + }, + { + "paper": "P252", + "gold_index": 100, + "step4_index": 93, + "raw_reference": "S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. 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B. Aleskovskii", + "gold_year": "1975", + "gold_venue": "Zh. Obshch. Khim.", + "gold_volume": "45", + "gold_issue": "", + "gold_pages": "3--7", + "source_bibitem_position": 102 + }, + { + "paper": "P252", + "gold_index": 103, + "step4_index": 96, + "raw_reference": "S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 75, 986 \u00012002\u0002 \u0003Russ. J. Appl. Chem. 75, 969 \u00012002\u0002\u0004.", + "bibtex_key": "Trifonov:02", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors", + "gold_authors": "S. A. Trifonov and V. A. Lapikov and A. A. Malygin", + "gold_year": "2002", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "75", + "gold_issue": "", + "gold_pages": "986-990", + "source_bibitem_position": 103 + }, + { + "paper": "P252", + "gold_index": 104, + "step4_index": 97, + "raw_reference": "A. N. Volkova, A. A. 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Kol'tsov and V. B. Aleskovskii", + "gold_year": "1968", + "gold_venue": "Zh. Fiz. Khim.", + "gold_volume": "42", + "gold_issue": "", + "gold_pages": "1210-1214", + "source_bibitem_position": 107 + }, + { + "paper": "P252", + "gold_index": 108, + "step4_index": 102, + "raw_reference": "V. N. Pak, Yu. P. Kostikov, S. I. Kol’tsov, and V. B. Aleskovskii, Kinet. Katal. 15, 1358 \u00011974\u0002 \u0003Kinet. Catal. 15, 1205 \u00011974\u0002\u0004.", + "bibtex_key": "Pak:74", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "DETERMINATION OF COORDINATION NUMBER OF TITANIUM ATOMS ON A TITANIUM-CONTAINING SILICA SURFACE BY MEASURING SHIFTS IN K _ _1 X -RAY LINES", + "gold_authors": "V. N. Pak and . P. Kostikov and S. I. Kol'tsov and V. B. Aleskovskii", + "gold_year": "1974", + "gold_venue": "Kinet. Katal.", + "gold_volume": "15", + "gold_issue": "", + "gold_pages": "1358-1359", + "source_bibitem_position": 108 + }, + { + "paper": "P252", + "gold_index": 109, + "step4_index": 103, + "raw_reference": "V. N. Pak, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 50, 1266 \u00011976\u0002 \u0003Russ. J. Phys. Chem. 50, 758 \u00011976\u0002\u0004.", + "bibtex_key": "Pak:76", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Structural effects of silica surfaces on molecularly superposed titanium-oxygen layers", + "gold_authors": "V. N. Pak", + "gold_year": "1976", + "gold_venue": "Zh. Fiz. Khim.", + "gold_volume": "50", + "gold_issue": "", + "gold_pages": "1266-1268", + "source_bibitem_position": 109 + }, + { + "paper": "P252", + "gold_index": 110, + "step4_index": 104, + "raw_reference": "V. A. Tolmachev, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 55, 1410 \u00011982\u0002 \u0003J. Appl. Chem. 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R. Rachovskii", + "gold_year": "1992", + "gold_venue": "Zh. Prikl. Khim.", + "gold_volume": "65", + "gold_issue": "", + "gold_pages": "2666--2671", + "source_bibitem_position": 111 + }, + { + "paper": "P252", + "gold_index": 112, + "step4_index": 106, + "raw_reference": "V. N. Pak, I. Yu. Tikhomirova, T. M. Burkat, and B. I. Lobov, Zh. Fiz. Khim. 73, 2024 \u00011999\u0002 \u0003Russ. J. Phys. Chem. 73, 1824 \u00011999\u0002\u0004.", + "bibtex_key": "Pak:99", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Properties of titanium-containing silicas and the specific features of the state of water on their surfaces", + "gold_authors": "V. N. Pak and I. . Tikhomirova and T. M. Burkat and B. I. Lobov", + "gold_year": "1999", + "gold_venue": "Zh. Fiz. Khim.", + "gold_volume": "73", + "gold_issue": "", + "gold_pages": "2024--2028", + "source_bibitem_position": 112 + }, + { + "paper": "P252", + "gold_index": 113, + "step4_index": 107, + "raw_reference": "S. I. 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Pal'chevskii", + "gold_year": "1984", + "gold_venue": "Opt. Mekh. Promst.", + "gold_volume": "51", + "gold_issue": "", + "gold_pages": "57--59", + "source_bibitem_position": 119 + }, + { + "paper": "P252", + "gold_index": 121, + "step4_index": 115, + "raw_reference": "M. N. Tsvetkova, V. N. Pak, A. A. Malygin, and S. I. Kol’tsov, Izv. Akad. Nauk SSSR, Neorg. Mater. 20, 144 \u00011984\u0002 \u0003Inorg. Mater. 20, 121 \u00011984\u0002\u0004.", + "bibtex_key": "Tsvetkova:84", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Coordination state of modifier cations on the surface of glass fillers", + "gold_authors": "M. N. Tsvetkova and V. N. Pak and A. A. Malygin and S. I. Kol'tsov", + "gold_year": "1984", + "gold_venue": "Neorg. Mater.", + "gold_volume": "20", + "gold_issue": "", + "gold_pages": "144-147", + "source_bibitem_position": 120 + }, + { + "paper": "P252", + "gold_index": 122, + "step4_index": 116, + "raw_reference": "L. I. Petrova, A. A. Malkov, and A. A. 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B", + "gold_volume": "108", + "gold_issue": "", + "gold_pages": "15150-15164", + "source_bibitem_position": 1124 + }, + { + "paper": "P252", + "gold_index": 1125, + "step4_index": 1093, + "raw_reference": "M. Siodmiak, G. Frenking, and A. Korkin, J. Phys. Chem. A 104, 1186 \u00012000\u0002.", + "bibtex_key": "Siodmiak:00", + "source_entry_type": "article", + "gold_doi": "", + "gold_title": "Initial Reactions in Chemical Vapor Deposition of Ta _2 O _5 from TaCl _5 and H _2 O . A n Ab Initio Study", + "gold_authors": "M. Siodmiak and G. Frenking and A. Korkin", + "gold_year": "2000", + "gold_venue": "J. Phys. Chem. A", + "gold_volume": "104", + "gold_issue": "", + "gold_pages": "1186-1195", + "source_bibitem_position": 1125 + } + ] +} diff --git a/Puurunen_2005/step7_resolved_tables/gold.json b/Puurunen_2005/step7_resolved_tables/gold.json new file mode 100644 index 0000000000000000000000000000000000000000..785975349de6e2d4ca2dfbd98c48e466365ebf46 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/gold.json @@ -0,0 +1,216 @@ +{ + "schema_version": 1, + "task": "step7_resolved_tables", + "paper_id": "P252", + "public_id": "Puurunen_2005", + "gold_type": "derived_gold", + "quality_scope": "Deterministic physical-table enrichment from authoritative Step 2 table content, Step 5 bibliography links, and Step 6 source-derived scholarly identities.", + "derivation": { + "step2": "../step2_table_reconstruction/", + "step4": "../step4_bibliography/gold.json", + "step5": "../step5_reference_matching/gold.json", + "step6": "../step6_reference_resolution/gold.json" + }, + "quality_columns": [ + "tabulus_reference_indices", + "tabulus_canonical_dois", + "tabulus_canonical_titles", + "tabulus_canonical_authors", + "tabulus_canonical_years", + "tabulus_canonical_venues", + "tabulus_raw_references" + ], + "prediction_columns_not_part_of_gold_quality_contract": [ + "tabulus_resolution_statuses", + "tabulus_resolution_sources", + "tabulus_resolution_confidences", + "tabulus_resolution_reasons", + "tabulus_unmatched_tokens" + ], + "semantics": { + "json_arrays": "Each appended cell is JSON-encoded. Array positions correspond to the bibliography indices in tabulus_reference_indices.", + "step6_scope": "Canonical identity fields are populated only where the authoritative Step 6 gold contains a record for the linked Step 4 bibliography index. Empty canonical fields mean that the reference is outside the Step 6 gold identity scope, not that the reference itself is absent.", + "physical_tables": "This core Step 7 gold contract covers physical reference-bearing tables. Optional continuation merging is not a separate quality target in this release." + }, + "summary": { + "resolved_gold_tables": 13, + "citation_cells": 538, + "bibliography_link_occurrences": 1579, + "unique_bibliography_indices_linked": 1053, + "step6_identity_covered_link_occurrences": 1486, + "step6_identity_uncovered_link_occurrences": 93, + "unique_step6_identity_covered_indices": 986, + "unique_step6_identity_uncovered_indices": 67 + }, + "tables": [ + { + "table_id": 1, + "table_key": "page_006_table_001", + "gold_csv": "tables/page_006_table_001/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_006_table_001/gold.csv", + "reference_column_index": 5, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 50, + "bibliography_links": 91, + "step6_identity_covered_links": 86, + "step6_identity_uncovered_links": 5 + }, + { + "table_id": 2, + "table_key": "page_007_table_002", + "gold_csv": "tables/page_007_table_002/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_007_table_002/gold.csv", + "reference_column_index": 5, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 16, + "bibliography_links": 19, + "step6_identity_covered_links": 18, + "step6_identity_uncovered_links": 1 + }, + { + "table_id": 3, + "table_key": "page_007_table_003", + "gold_csv": "tables/page_007_table_003/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_007_table_003/gold.csv", + "reference_column_index": 2, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 10, + "bibliography_links": 10, + "step6_identity_covered_links": 10, + "step6_identity_uncovered_links": 0 + }, + { + "table_id": 4, + "table_key": "page_009_table_004", + "gold_csv": "tables/page_009_table_004/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_009_table_004/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 50, + "bibliography_links": 208, + "step6_identity_covered_links": 202, + "step6_identity_uncovered_links": 6 + }, + { + "table_id": 5, + "table_key": "page_010_table_005", + "gold_csv": "tables/page_010_table_005/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_010_table_005/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 59, + "bibliography_links": 126, + "step6_identity_covered_links": 122, + "step6_identity_uncovered_links": 4 + }, + { + "table_id": 6, + "table_key": "page_011_table_006", + "gold_csv": "tables/page_011_table_006/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_011_table_006/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 51, + "bibliography_links": 221, + "step6_identity_covered_links": 214, + "step6_identity_uncovered_links": 7 + }, + { + "table_id": 7, + "table_key": "page_012_table_007", + "gold_csv": "tables/page_012_table_007/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_012_table_007/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 54, + "bibliography_links": 187, + "step6_identity_covered_links": 179, + "step6_identity_uncovered_links": 8 + }, + { + "table_id": 8, + "table_key": "page_013_table_008", + "gold_csv": "tables/page_013_table_008/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_013_table_008/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 53, + "bibliography_links": 220, + "step6_identity_covered_links": 211, + "step6_identity_uncovered_links": 9 + }, + { + "table_id": 9, + "table_key": "page_014_table_009", + "gold_csv": "tables/page_014_table_009/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_014_table_009/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 51, + "bibliography_links": 139, + "step6_identity_covered_links": 135, + "step6_identity_uncovered_links": 4 + }, + { + "table_id": 10, + "table_key": "page_015_table_010", + "gold_csv": "tables/page_015_table_010/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_015_table_010/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 43, + "bibliography_links": 108, + "step6_identity_covered_links": 106, + "step6_identity_uncovered_links": 2 + }, + { + "table_id": 11, + "table_key": "page_016_table_011", + "gold_csv": "tables/page_016_table_011/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_016_table_011/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 47, + "bibliography_links": 145, + "step6_identity_covered_links": 138, + "step6_identity_uncovered_links": 7 + }, + { + "table_id": 12, + "table_key": "page_017_table_012", + "gold_csv": "tables/page_017_table_012/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_017_table_012/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 33, + "bibliography_links": 57, + "step6_identity_covered_links": 53, + "step6_identity_uncovered_links": 4 + }, + { + "table_id": 13, + "table_key": "page_018_table_013", + "gold_csv": "tables/page_018_table_013/gold.csv", + "source_step2_gold_csv": "../step2_table_reconstruction/tables/page_018_table_013/gold.csv", + "reference_column_index": 4, + "reference_column_header": "Refs.", + "header_row_index": 0, + "citation_cells": 21, + "bibliography_links": 48, + "step6_identity_covered_links": 12, + "step6_identity_uncovered_links": 36 + } + ] +} diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_006_table_001/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_006_table_001/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..ce085090f1750674d80fa65d6fcd94b301a39179 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_006_table_001/gold.csv @@ -0,0 +1,58 @@ +Z,Material,Reactant A,Reactant B,Substrate,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +5,Boron,,,,,[],[],[],[],[],[],[] +,B2O3,BBr3,H2O,SiO2 gel,85,[85],"[""""]","[""FORMATION OF THIN ALUMINUM-OXIDE FILMS""]","[[""G. V. Anikeev"","". K. Ezhovskii"",""S. I. Kol'tsov""]]",[1988],"[""Neorg. Mater.""]","[""G. V. Anikeev, Yu. K. Ezhovskii, and S. I. Kol’tsov, Izv. Akad. Nauk SSSR, Neorg. Mater. 24, 619 \u00011988\u0002 \u0003Inorg. Mater. 24, 514 \u00011988\u0002\u0004.""]" +,BxPyOz,B(OMe)3,POCl3,SiO2 gel,88 and 89,"[88,89]","["""",""""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium"",""Thermal oxidation of silicon carbide with surface modification by the molecular layering method""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""L. V. Miroshnichenko"",""A. A. Malygin"",""S. I. Kol'tsov""]]","[1974,1985]","[""Zh. Prikl. Khim."",""Ogneupory""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 47, 2332 \u00011974\u0002 \u0003J. Appl. Chem. USSR 47, 2390 \u00011974\u0002\u0004."",""L. V. Miroshnichenko, A. A. Malygin, and S. I. Kol’tsov, Ogneupory 26, 22 \u00011985\u0002 \u0003Refractories 26, 82 \u00011985\u0002\u0004.""]" +13,Aluminum,,,,,[],[],[],[],[],[],[] +,Al2O3,AlCl3,H2O,SiO2 gel,"83, 90, and 91","[83,90,91]","["""","""",""""]","[""Study of aluminosilicate systems synthesized by the molecular-layering method"",""Interaction of trichlorosilane with silica gel"",""Study of the stoichiometry of the products formed in the reaction of trichlorosilane with the functional groups of polysilisic acid""]","[[""S. I. Kol'tsov"",""V. M. Smirnov"",""R. R. Rachkovskii"",""T. V. Malalaeva"",""V. B. Aleskovskii""],[""S. I. Kol'tsov""],[""S. I. Kol'tsov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""]]","[1978,1965,1967]","[""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, V. M. Smirnov, R. R. Rachkovskii, T. V. Malalaeva, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 51, 2596 \u00011978\u0002 \u0003J. Appl. Chem. USSR 51, 2475 \u00011978\u0002\u0004."",""S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 38, 1384 \u00011965\u0002 \u0003J. Appl. Chem. USSR 38, 1352 \u00011965\u0002\u0004."",""S. I. Kol’tsov, G. N. Kuznetsova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 40, 2774 \u00011967\u0002 \u0003J. Appl. Chem. USSR 40, 2644 \u00011967\u0002\u0004.""]" +,,AlCl3,H2O,Al2O3 gel,90,[90],"[""""]","[""Interaction of trichlorosilane with silica gel""]","[[""S. I. Kol'tsov""]]",[1965],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 38, 1384 \u00011965\u0002 \u0003J. Appl. Chem. USSR 38, 1352 \u00011965\u0002\u0004.""]" +,,AlCl3,H2O,"Si, Al",91,[91],"[""""]","[""Study of the stoichiometry of the products formed in the reaction of trichlorosilane with the functional groups of polysilisic acid""]","[[""S. I. Kol'tsov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""]]",[1967],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, G. N. Kuznetsova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 40, 2774 \u00011967\u0002 \u0003J. Appl. Chem. USSR 40, 2644 \u00011967\u0002\u0004.""]" +,,AlBr3,H2O,Si,92,[92],"[""""]","[""Oxidation of polyhydrosiloxane prepared by molecular layering""]","[[""S. I. Kol'tsov""]]",[2001],"[""Zh. Obshch. Khim.""]","[""S. I. Kol’tsov, Zh. Obshch. Khim. 71, 1616 \u00012001\u0002 \u0003Russ. J. Gen. Chem. 71, 1531 \u00012001\u0002\u0004.""]" +,,AlMe3,NO2,Si,93,[93],"[""""]","[""Preparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel""]","[[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""]]",[1969],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 980 \u00011969\u0002\u0004.""]" +,AlxSiyOz,AlCl3,Si(OEt)4,SiO2 gel,94,[94],"[""""]","[""Effect of surface coverage of silica gel with phosphorus on subsequent chemisorption of titanium tetrachloride""]","[[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""]]",[1972],"[""Zh. Fiz. Kihm.""]","[""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Fiz. Khim. 46, 1292 \u00011972\u0002 \u0003Russ. J. Phys. Chem. 46, 742 \u00011972\u0002\u0004.""]" +,AlxCryOz,AlMe3,CrO2Cl2,Si,93,[93],"[""""]","[""Preparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel""]","[[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""]]",[1969],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 980 \u00011969\u0002\u0004.""]" +14,Silicon,,,,,[],[],[],[],[],[],[] +,SiO2,SiCl4,H2O,Si,78,[78],"[""""]","[""Molecular layering of boron oxide on the surface of silica""]","[[""S. I. Kol'tsov"",""T. V. Tuz"",""A. N. Volkova""]]",[1979],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, T. V. Tuz, and A. N. Volkova, Zh. Prikl. Khim. \u0001S.- Peterburg\u0002 52, 2196 \u00011979\u0002 \u0003J. Appl. Chem. USSR 52, 2074 \u00011979\u0002\u0004.""]" +,,SiCl4,H2O,Ge,95,[95],"[""""]","[""Ineraction of chromium-containing silica gel with phosphorus trichloride""]","[[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]",[1975],"[""Zh. Obshch. Khim.""]","[""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 45, 3 \u00011975\u0002 \u0003J. Gen. Chem. USSR 45, 1 \u00011975\u0002\u0004.""]" +,,SiCl4,H2O,SiO2 gel,90,[90],"[""""]","[""Interaction of trichlorosilane with silica gel""]","[[""S. I. Kol'tsov""]]",[1965],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 38, 1384 \u00011965\u0002 \u0003J. Appl. Chem. USSR 38, 1352 \u00011965\u0002\u0004.""]" +,,SiCl4,H2O,Al2O3 gel,90,[90],"[""""]","[""Interaction of trichlorosilane with silica gel""]","[[""S. I. Kol'tsov""]]",[1965],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 38, 1384 \u00011965\u0002 \u0003J. Appl. Chem. USSR 38, 1352 \u00011965\u0002\u0004.""]" +,,SiCl4,H2O,SiC,96,[96],"[""""]","[""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors""]","[[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""]]",[2002],"[""Zh. Prikl. Khim.""]","[""S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 75, 986 \u00012002\u0002 \u0003Russ. J. Appl. Chem. 75, 969 \u00012002\u0002\u0004.""]" +,,SiCl3H,H2O,SiO2 gel,97–99,"[97,98,99]","["""","""",""""]","[""Reaction of phosphoryl chloride with hydrated silica"",""Chemical compositionnof silica containing chromium and phosphorus synthesized by the molecular-stratification method"",""""]","[[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[]]","[1973,1980,null]","[""Zh. Obshch. Khim."",""Zh. Obshch. Khim."",""""]","[""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 43, 724 \u00011973\u0002 \u0003J. Gen. Chem. USSR 43, 723 \u00011973\u0002\u0004."",""A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 50, 2633 \u00011980\u0002 \u0003J. Gen. Chem. USSR 50, 2121 \u00011980\u0002\u0004."",""S. I. Kol’tsov, Zh. Obshch. Khim. 71, 1616 \u00012001\u0002 \u0003Russ. J. Gen. Chem. 71, 1531 \u00012001\u0002\u0004.""]" +,SixAlyOz,Si(OEt)4,AlCl3,SiO2 gel,94,[94],"[""""]","[""Effect of surface coverage of silica gel with phosphorus on subsequent chemisorption of titanium tetrachloride""]","[[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""]]",[1972],"[""Zh. Fiz. Kihm.""]","[""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Fiz. Khim. 46, 1292 \u00011972\u0002 \u0003Russ. J. Phys. Chem. 46, 742 \u00011972\u0002\u0004.""]" +,SixTiyOz,Si(OEt)4,TiCl4,SiO2 gel,88,[88],"[""""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]",[1974],"[""Zh. Prikl. Khim.""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 47, 2332 \u00011974\u0002 \u0003J. Appl. Chem. USSR 47, 2390 \u00011974\u0002\u0004.""]" +15,Phosphorus,,,,,[],[],[],[],[],[],[] +,POx,PCl3,H2O,SiO2 gel,82 and 100–102,"[82,100,101,102]","["""","""","""",""""]","[""Investigation of molecular deposition reactions in the formation of boron phosphate on the surface of dispersed silica"","""",""Effect of degree of dehydration of silica gel on mechanism of hydrolysis of adsorbed titanium tetrachloride"",""DETERMINATION OF COORDINATION NUMBER OF TITANIUM ATOMS ON A TITANIUM-CONTAINING SILICA SURFACE BY MEASURING SHIFTS IN K _ _1 X -RAY LINES""]","[[""V. M. Gun'ko""],[],[""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""V. N. Pak"","". P. Kostikov"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]","[1993,null,1968,1974]","[""Kinet. Katal."","""",""Zh. Fiz. Khim."",""Kinet. Katal.""]","[""V. M. Gun’ko, Kinet. Katal. 34, 463 \u00011993\u0002 \u0003Kinet. Catal. 34, 406 \u00011993\u0002\u0004."",""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 980 \u00011969\u0002\u0004."",""S. I. Kol’tsov and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1210 \u00011968\u0002 \u0003Russ. J. Phys. Chem. 42, 630 \u00011968\u0002\u0004."",""V. N. Pak, Yu. P. Kostikov, S. I. Kol’tsov, and V. B. Aleskovskii, Kinet. Katal. 15, 1358 \u00011974\u0002 \u0003Kinet. Catal. 15, 1205 \u00011974\u0002\u0004.""]" +,,PCl3,– c,polymer,103,[103],"[""""]","[""Structural effects of silica surfaces on molecularly superposed titanium-oxygen layers""]","[[""V. N. Pak""]]",[1976],"[""Zh. Fiz. Khim.""]","[""V. N. Pak, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 50, 1266 \u00011976\u0002 \u0003Russ. J. Phys. Chem. 50, 758 \u00011976\u0002\u0004.""]" +,,POCl3,– c,SiO2 gel,104 and 105,"[104,105]","["""",""""]","[""Possibility of the use of a gravimetric method for studying the process of molecular layering in disperse silica samples"",""Synthesis of oxide layers on silicon polydioxide by molecular deposition with methoxyl functional groups""]","[[""V. A. Tolmachev""],[""V. M. Smirnov"",""A. A. Malkov"",""R. R. Rachovskii""]]","[1982,1992]","[""Zh. Prikl. Khim."",""Zh. Prikl. Khim.""]","[""V. A. Tolmachev, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 55, 1410 \u00011982\u0002 \u0003J. Appl. Chem. USSR 55, 1298 \u00011982\u0002\u0004."",""V. M. Smirnov, A. A. Malkov, and R. R. Rachovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 65, 2666 \u00011992\u0002 \u0003J. Appl. Chem. USSR 65, 2213 \u00011992\u0002\u0004.""]" +,,POCl3,H2O,SiC,96,[96],"[""""]","[""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors""]","[[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""]]",[2002],"[""Zh. Prikl. Khim.""]","[""S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 75, 986 \u00012002\u0002 \u0003Russ. J. Appl. Chem. 75, 969 \u00012002\u0002\u0004.""]" +,PxByOz,POCl3,B(OMe)3,SiO2 gel,88 and 89,"[88,89]","["""",""""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium"",""Thermal oxidation of silicon carbide with surface modification by the molecular layering method""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""L. V. Miroshnichenko"",""A. A. Malygin"",""S. I. Kol'tsov""]]","[1974,1985]","[""Zh. Prikl. Khim."",""Ogneupory""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 47, 2332 \u00011974\u0002 \u0003J. Appl. Chem. USSR 47, 2390 \u00011974\u0002\u0004."",""L. V. Miroshnichenko, A. A. Malygin, and S. I. Kol’tsov, Ogneupory 26, 22 \u00011985\u0002 \u0003Refractories 26, 82 \u00011985\u0002\u0004.""]" +22,Titanium,,,,,[],[],[],[],[],[],[] +,TiO2,TiCl4,H2O,SiO2 gel,"1, 79, 80, 100, 101, and 106–113","[1,79,80,100,101,106,107,108,109,110,111,112,113]","["""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""Interaction of titanium and germanium tetrachlorides with hydroxylated silicon dioxide"",""Structure of a zinc sulfide film prepared by molecular stratification on the surface of disperse silica"","""","""",""Effect of degree of dehydration of silica gel on mechanism of hydrolysis of adsorbed titanium tetrachloride"",""Properties of titanium-containing silicas and the specific features of the state of water on their surfaces"",""Molecular layering of titanium-oxide groups on the surface of copper-containing silica gel"",""INVESTIGATION OF DEGREE OF MONOCRYSTALLINE SILICON SURFACE HYDRATION AT DIFFERENT TEMPERATURES"","""",""Investigation of the structure of titanium oxide layers synthesized by molecular stratification on the surface of single-crystal backings"",""Electrical properties of the surface of germanium in contact with transition-metal oxides formed by the molecular deposition method"",""Preparation of titanium oxide coatings on sodium borosilicate glass surfaces by molecular layering and study of the stability of the products obtained in aqueous medium"",""Investigation of the synthesis process and properties of titanium-oxide films, formed by molecular deposition method""]","[[""A. M Shevjakov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""],[""N. A. Stepanova"",""V. D. Kupriyanov"",""A. A. Malygin""],[],[],[""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""V. N. Pak"",""I. . Tikhomirova"",""T. M. Burkat"",""B. I. Lobov""],[""S. I. Kol'tsov"",""G. N. Kuznetsova""],[""S. I. Kol'tsov"",""V. E. Drozd"",""V. B. Aleskovskii""],[],[""S. I. Kol'tsov"",""V. E. Drozd"",""T. A. Redova"",""V. B. Aleskovskii""],[""V. B. Aleskovskii"",""V. E. Drozd"",""V. F. Kiselev"",""S. N. Kozlov"",""S. I. Kol'tsov"",""A. S. Petrov"",""G. S. Plotnikov""],[""M. N. Tsvetkova"",""I. M. Yur'evskaya"",""A. A. Malygin"",""S. I. Kol'tsov"","". I. Skorik""],[""V. A. Tolmachev"",""M. A. Okatov""]]","[1967,1987,null,null,1968,1999,1999,1976,null,1977,1979,1982,1983]","[""Chemistry of high temperature materials. Proceedings of 2nd USSR conference on high temperature chemistry of oxides, November 26-29, 1965, Leningrad, USSR"",""Neorg. Mater."","""","""",""Zh. Fiz. Khim."",""Zh. Fiz. Khim."",""Zh. Prikl. Khim."",""Dokl. Akad. Nauk SSSR"","""",""Dokl. Akad. Nauk SSSR"",""Fiz. Tekh. Poluprovodn."",""Zh. Prikl. Khim."",""Opt. Mekh. Promst.""]","[""A. M. Shevjakov, G. N. Kuznetsova, and V. B. Aleskovskii, in Chemistry of High-Temperature Materials, Proceedings of the Second USSR Conference on High-Temperature Chemistry of Oxides, Leningrad, USSR, 26–29 November 1965 \u0001Nauka, Leningrad, USSR, 1967\u0002, pp. 149–155, in Russian."",""N. A. Stepanova, V. D. Kupriyanov, and A. A. Malygin, Izv. Akad. Nauk SSSR, Neorg. Mater. 23, 377 \u00011987\u0002 \u0003Inorg. Mater. 23, 331 \u00011987\u0002\u0004."",""S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 43, 1956 \u00011970\u0002 \u0003J. Appl. Chem. USSR 43, 1976 \u00011970\u0002\u0004."",""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 980 \u00011969\u0002\u0004."",""S. I. Kol’tsov and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1210 \u00011968\u0002 \u0003Russ. J. Phys. Chem. 42, 630 \u00011968\u0002\u0004."",""V. N. Pak, I. Yu. Tikhomirova, T. M. Burkat, and B. I. Lobov, Zh. Fiz. Khim. 73, 2024 \u00011999\u0002 \u0003Russ. J. Phys. Chem. 73, 1824 \u00011999\u0002\u0004."",""S. I. Kol’tsov and G. N. Kuznetsova, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 72, 900 \u00011999\u0002 \u0003Russ. J. Appl. Chem. 72, 942 \u00011999\u0002\u0004."",""S. I. Kol’tsov, V. E. Drozd, and V. B. Aleskovskii, Dokl. Akad. Nauk SSSR 229, 1145 \u00011976\u0002 \u0003Dokl. Phys. Chem. 229, 718 \u00011976\u0002\u0004."",""V. N. Pak, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 50, 1266 \u00011976\u0002 \u0003Russ. J. Phys. Chem. 50, 758 \u00011976\u0002\u0004."",""S. I. Kol’tsov, V. E. Drozd, T. A. Redova, and V. B. Aleskovskii, Dokl. Akad. Nauk SSSR 235, 1090 \u00011977\u0002 \u0003Dokl. Phys. Chem. 235, 794 \u00011977\u0002\u0004."",""V. B. Aleskovskii, V. E. Drozd, V. F. Kiselev, S. N. Kozlov, S. I. Kol’tsov, A. S. Petrov, and G. S. Plotnikov, Fiz. Tekh. Poluprovodn. \u0001S.-Peterburg\u0002 13, 1397 \u00011979\u0002 \u0003Sov. Phys. Semicond. 13, 817 \u00011979\u0002\u0004."",""M. N. Tsvetkova, I. M. Yur’evskaya, A. A. Malygin, S. I. Kol’tsov, and Yu. I. Skorik, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 55, 256 \u00011982\u0002 \u0003J. Appl. Chem. USSR 55, 229 \u00011982\u0002\u0004."",""V. A. Tolmachev and M. A. Okatov, Opt. Mekh. Promst. 50, 38 \u00011983\u0002 \u0003Sov. J. Opt. Technol. 50, 706 \u00011983\u0002\u0004.""]" +,,TiCl4,H2O,Si,81 and 114,"[81,114]","["""",""""]","[""Synthesis and study of boron phosphate and titanium silicate compounds on silica surface"",""Molecular layering of titanium oxide layers and their effect on the chemical stability of optical glass""]","[[""V. V. Brei"",""V. A. Kasperskii"",""N. E. Gulyanitskaya""],[""V. A. Tolmachev"",""M. A. Okatov"",""V. V. Pal'chevskii""]]","[1993,1984]","[""React. Kinet. Catal. Lett."",""Opt. Mekh. Promst.""]","[""V. V. Brei, V. A. Kasperskii, and N. E. Gulyanitskaya, React. Kinet. Catal. Lett. 50, 415 \u00011993\u0002."",""V. A. Tolmachev, M. A. Okatov, and V. V. Pal’chevskii, Opt. Mekh. Promst. 51, 57 \u00011984\u0002 \u0003Sov. J. Opt. Technol. 51, 368 \u00011984\u0002\u0004.""]" +,,TiCl4,H2O,Ge,116 and 117,"[116,117]","["""",""""]","[""REACTION OF TiCl _4 AND H _2 O VAPOR PRODUCTS WITH A MICA SURFACE"",""Synthesis of hydroxyl--titanium--carbon solid compounds on diamond by the molecular-stratification method""]","[[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""S. K. Gordeev"",""E. P. Smirnov"",""S. I. Kol'tsov""]]","[1986,1982]","[""Zh. Prikl. Khim."",""Zh. Obshch. Khim.""]","[""L. I. Petrova, A. A. Malkov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 59, 1224 \u00011986\u0002 \u0003J. Appl. Chem. USSR 59, 1131 \u00011986\u0002\u0004."",""S. K. Gordeev, E. P. Smirnov, and S. I. Kol’tsov, Zh. Obshch. Khim. 52, 1468 \u00011982\u0002 \u0003J. Gen. Chem. USSR 52, 1298 \u00011982\u0002\u0004.""]" +,,TiCl4,H2O,SiC,96 and 116,"[96,116]","["""",""""]","[""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors"",""REACTION OF TiCl _4 AND H _2 O VAPOR PRODUCTS WITH A MICA SURFACE""]","[[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""]]","[2002,1986]","[""Zh. Prikl. Khim."",""Zh. Prikl. Khim.""]","[""S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 75, 986 \u00012002\u0002 \u0003Russ. J. Appl. Chem. 75, 969 \u00012002\u0002\u0004."",""L. I. Petrova, A. A. Malkov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 59, 1224 \u00011986\u0002 \u0003J. Appl. Chem. USSR 59, 1131 \u00011986\u0002\u0004.""]" +,,TiCl4,H2O,glass,118–122,"[118,119,120,121,122]","["""","""","""","""",""""]","[""Interaction of titanium tetrachloride with diamond preparations"",""Kinetic equation for the reaction of titanium tetrachloride with hydride functional groups on diamond"",""Formation of titanium dioxide films in the course of chemical assembly"",""Change in potential of anodized aluminum upon its modification with titanium dioxide"",""INFLUENCE OF THE DEGREE OF HYDROXYLATION OF THE SURFACE - Al _2 O _3 ON THE CHARACTER OF CHEMISORPTION OF TiCl _4""]","[[""S. K. Gordeev"",""E. P. Smirnov""],[""A. B. Zhidkov"",""E. P. Smirnov""],[""A. L. Egorov"","". K. Ezhovskii"",""S. I. Kol'tsov"",""G. V. Anikeev""],[""A. A. Seitmagzimov"",""V. N. Pak"",""S. I. Kol'tsov""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""]]","[1982,1988,1984,1985,1986]","[""Zh. Obshch. Khim."",""Kinet. Katal."",""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Zh. Prikl. Khim.""]","[""S. K. Gordeev and E. P. Smirnov, Zh. Obshch. Khim. 52, 1464 \u00011982\u0002 \u0003J. Gen. Chem. USSR 52, 1294 \u00011982\u0002\u0004."",""A. B. Zhidkov and E. P. Smirnov, Kinet. Katal. 29, 946 \u00011988\u0002 \u0003Kinet. Catal. 29, 813 \u00011988\u0002\u0004."",""A. L. Egorov, Yu. K. Ezhovskii, S. I. Kol’tsov, and G. V. Anikeev, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 57, 2593 \u00011984\u0002 \u0003J. Appl. Chem. USSR 57, 2395 \u00011984\u0002\u0004."",""A. A. Seitmagzimov, V. N. Pak, and S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 58, 92 \u00011985\u0002 \u0003J. Appl. Chem. USSR 58, 85 \u00011985\u0002\u0004."",""L. I. Petrova, A. A. Malkov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 59, 2277 \u00011986\u0002 \u0003J. Appl. Chem. USSR 59, 2093 \u00011986\u0002\u0004.""]" +,,TiCl4,H2O,C,123–125,"[123,124,125]","["""","""",""""]","[""EFFECT OF DEHYDRATION AND REHYDRATION OF THE ALUMINUM-OXIDE SURFACE ON THE CHEMISORPTION OF TiCl _4"",""Phase formation and change in surface acidity in synthesis of titanium oxide layer on - Al _2 O _3 by the molecular lamination method"",""Effect of the history of a disperse system on thermal compaction of materials containing - AlO _ 1.5 and TiO _2""]","[[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""N. V. Dolgushev"",""A. A. Malkov"",""A. A. Malygin"",""S. A. Suvorov"",""A. V. Shchukarev"",""A. V. Beljaev"",""V. A. Bykov""]]","[1991,1991,1992]","[""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Zh. Prikl. Khim.""]","[""L. I. Petrova, A. A. Malkov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 64, 763 \u00011991\u0002 \u0003J. Appl. Chem. USSR 64, 679 \u00011991\u0002\u0004."",""L. I. Petrova, A. A. Malkov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 64, 1435 \u00011991\u0002 \u0003J. Appl. Chem. USSR 64, 1290 \u00011991\u0002\u0004."",""N. V. Dolgushev, A. A. Malkov, A. A. Malkov, A. A. Malygin, S. A. Suvorov, A. V. Shchukarev, A. V. Beljaev, and V. A. Bykov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 65, 1117 \u00011992\u0002 \u0003J. Appl. Chem. USSR 65, 921 \u00011992\u0002\u0004.""]" +,,TiCl4,H2O,GaAs,126,[126],"[""""]","[""Synthesis and characterization of nanosized titanium oxide films on the (0001) - Al _2 O _3 surface""]","[[""N. V. Dolgushev"",""A. A. Malkov"",""A. A. Malygin"",""S. A. Suvorov"",""A. V. Shchukarev"",""A. V. Beljaev"",""V. A. Bykov""]]",[1997],"[""Thin Solid Films""]","[""N. V. Dolgushev, A. A. Malkov, A. A. Malygin, S. A. Suvorov, A. V. Shchukarev, A. V. Beljaev, and V. A. Bykov, Thin Solid Films 293, 91 \u00011997\u0002.""]" +,,TiCl4,H2O,Al,127,[127],"[""""]","[""Interaction of Titanium Tetrachloride with Products of Thermal Decomposition of Basic Magnesium Carbonate""]","[[""S. A. Morozov"",""A. A. Malkov"",""A. A. Malygin""]]",[2003],"[""Zh. Prikl. Khim.""]","[""S. A. Morozov, A. A. Malkov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 76, 9 \u00012003\u0002 \u0003Russ. J. Appl. Chem. 76, 7 \u00012003\u0002\u0004.""]" +,,TiCl4,H2O,Al2O3,128–132,"[128,129,130,131,132]","["""","""","""","""",""""]","[""Pigmentation of mica with titanium dioxide by molecular deposition of titanium tetrabutoxide"",""Reaction of vanadyl trichloride with silica"",""STUDIES ON CATALYTICALLY ACTIVE SURFACE COMPOUNDS 1. P REPARATION AND INVESTIGATION OF VANADIUM OXIDE PHASES ON SILICA"",""STUDIES ON CATALYTICALLY ACTIVE SURFACE COMPOUNDS 2. E XISTENCE OF DIFFERENT VANADIUM( V ) OXIDE SURFACE PHASES ON SiO _2 AND THEIR CATALYTIC PROPERTIES"",""Interaction of chromyl chloride with silica gel""]","[[""L. I. Chernaya"",""P. E. Matkovskii"",""V. M. Rudakov"","". M. Shul'ga"",""I. V. Markov"",""V. I. Tomilo"",""Z. G. Busheva""],[""A. A. Malygin"",""A. N. Volkova"",""S. I. Kol'tsov"",""A. A. Aleskovskii""],[""W. Hanke"",""R. Bienert"",""H.-G. Jerschkewitz""],[""W. Hanke"",""K. Heise"",""H.-G. Jerschkewitz"",""G. Lischke"",""G. Ohlmann"",""B. Parlitz""],[""A. N. Volkova"",""A. A. Malygin"",""V. M. Smirnov"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]","[1992,1972,1975,1978,1972]","[""Zh. Obshch. Khim."",""Zh. Obshch. Khim."",""Z. Anorg. Allg. Chem."",""Z. Anorg. Allg. Chem."",""Zh. Obshch. Khim.""]","[""L. I. Chernaya, P. E. Matkovskii, V. M. Rudakov, Yu. M. Shul’ga, I. V. Markov, V. I. Tomilo, and Z. G. Busheva, Zh. Obshch. Khim. 62, 28 \u00011992\u0002 \u0003J. Gen. Chem. USSR 62, 21 \u00011992\u0002\u0004."",""A. A. Malygin, A. N. Volkova, S. I. Kol’tsov, and A. A. Aleskovskii, Zh. Obshch. Khim. 43, 1436 \u00011972\u0002 \u0003J. Gen. Chem. USSR 43, 1426 \u00011973\u0002\u0004."",""W. Hanke, R. Bienert, and H.-G. Jerschkewitz, Z. Anorg. Allg. Chem. 414, 109 \u00011975\u0002."",""W. Hanke, K. Heise, H.-G. Jerschkewitz, G. Lischke, G. Öhlmann, and B. Parlitz, Z. Anorg. Allg. Chem. 438, 176 \u00011978\u0002."",""A. N. Volkova, A. A. Malygin, V. M. Smirnov, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 42, 1431 \u00011972\u0002 \u0003J. Gen. Chem. USSR 42, 1422 \u00011972\u0002\u0004.""]" +,,TiCl4,H2O,MgO,133,[133],"[""""]","[""Reaction of chromium-containing silica gel with hydrogen chloride""]","[[""A. A. Malygin"",""A. N. Volkova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]",[1972],"[""Zh. Obshch. Khim.""]","[""A. A. Malygin, A. N. Volkova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 42, 2373 \u00011972\u0002 \u0003J. Gen. Chem. USSR 42, 2368 \u00011972\u0002\u0004.""]" +,,Ti(OBu)4,H2O,glass,134,[134],"[""""]","[""Changes in the structure of dispersed silica during the molecular stratification of chromium oxide""]","[[""G. N. Kuznetsova"",""T. V. Shakina"",""A. A. Malygin"",""S. I. Kol'tsov""]]",[1983],"[""Kolloidn. Zh.""]","[""G. N. Kuznetsova, T. V. Shakina, A. A. Malygin, and S. I. Kol’tsov, Kolloidn. Zh. 45, 574 \u00011983\u0002 \u0003Colloid J. USSR 45, 503 \u00011983\u0002\u0004.""]" +,TixSiyOz,TiCl4,H2O,SiO2 gel,88,[88],"[""""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]",[1974],"[""Zh. Prikl. Khim.""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 47, 2332 \u00011974\u0002 \u0003J. Appl. Chem. USSR 47, 2390 \u00011974\u0002\u0004.""]" +23,Vanadium,,,,,[],[],[],[],[],[],[] +,VOx,VOCl3,H2O,SiO2 gel,135–137,"[135,136,137]","["""","""",""""]","[""Surface activity of metals ( Ni, Ti ) in molecular stratification reactions"",""Structural characteristics of chromium-containing silica gel prepared by molecular coating"",""IR spectroscopic study of the reaction of iron( III ) chloride vapor with partially dehydroxylated aerosil""]","[[""A. P. Nechiporenko"",""G. K. Shevchenko"",""S. I. Kol'tsov""],[""S. I. Kol'tsov"",""A. A. Malygin"",""V. B. Aleskovskii""],[""V. B. Aleskovskii"","". M. Artem'ev"",""S. F. Gerasimov""]]","[1982,1980,1994]","[""Zh. Prikl. Kim."",""Zh. Fiz. Khim."",""Zh. Prikl. Khim.""]","[""A. P. Nechiporenko, G. K. Shevchenko, and S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 55, 1239 \u00011982\u0002 \u0003J. Appl. Chem. USSR 55, 1133 \u00011982\u0002\u0004."",""S. I. Kol’tsov, A. A. Malygin, and V. B. Aleskovskii, Zh. Fiz. Khim. 54, 2331 \u00011980\u0002 \u0003Russ. J. Phys. Chem. 54, 2331 \u00011980\u0002\u0004."",""V. B. Aleskovskii, Yu. M. Artem’ev, and S. F. Gerasimov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 67, 212 \u00011994\u0002 \u0003Russ. J. Appl. Chem. 67, 192 \u00011994\u0002\u0004.""]" +,,VOCl3,H2O,Ge,117,[117],"[""""]","[""Synthesis of hydroxyl--titanium--carbon solid compounds on diamond by the molecular-stratification method""]","[[""S. K. Gordeev"",""E. P. Smirnov"",""S. I. Kol'tsov""]]",[1982],"[""Zh. Obshch. Khim.""]","[""S. K. Gordeev, E. P. Smirnov, and S. I. Kol’tsov, Zh. Obshch. Khim. 52, 1468 \u00011982\u0002 \u0003J. Gen. Chem. USSR 52, 1298 \u00011982\u0002\u0004.""]" +,,VOCl3,H2O,glass,121,[121],"[""""]","[""Change in potential of anodized aluminum upon its modification with titanium dioxide""]","[[""A. A. Seitmagzimov"",""V. N. Pak"",""S. I. Kol'tsov""]]",[1985],"[""Zh. Prikl. Khim.""]","[""A. A. Seitmagzimov, V. N. Pak, and S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 58, 92 \u00011985\u0002 \u0003J. Appl. Chem. USSR 58, 85 \u00011985\u0002\u0004.""]" +,,VOCl3,H2O,SiC,96,[96],"[""""]","[""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors""]","[[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""]]",[2002],"[""Zh. Prikl. Khim.""]","[""S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 75, 986 \u00012002\u0002 \u0003Russ. J. Appl. Chem. 75, 969 \u00012002\u0002\u0004.""]" +,,VOCl3,– c,polymer,103,[103],"[""""]","[""Structural effects of silica surfaces on molecularly superposed titanium-oxygen layers""]","[[""V. N. Pak""]]",[1976],"[""Zh. Fiz. Khim.""]","[""V. N. Pak, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 50, 1266 \u00011976\u0002 \u0003Russ. J. Phys. Chem. 50, 758 \u00011976\u0002\u0004.""]" +24,Chromium,,,,,[],[],[],[],[],[],[] +,CrOx,CrO2Cl2,– c,SiO2 gel,105 and 138–140,"[105,138,139,140]","["""","""","""",""""]","[""Synthesis of oxide layers on silicon polydioxide by molecular deposition with methoxyl functional groups"",""Study of the reaction between zinc chloride and silica gel"",""Molecular layering of 2 D films and superlattices based on II -- VI compounds"",""Interaction of germanium tetrachloride with silica gel""]","[[""V. M. Smirnov"",""A. A. Malkov"",""R. R. Rachovskii""],[""N. A. Stepanova"",""V. M. Smirnov"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""R. A. Bisengaliev"",""B. V. Novikov"",""V. B. Aleskovskii"",""V. E. Drozd"",""D. A. Ageev"",""V. I. Gubaidullin"",""A. P. Savchenko""],[""S. I. Kol'tsov"",""V. B. Aleskovskii"",""G. N. Kuznetsova"",""N. G. Roslyakova""]]","[1992,1977,1998,1967]","[""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Fiz. Tverd. Tela"",""Neorg. Mater.""]","[""V. M. Smirnov, A. A. Malkov, and R. R. Rachovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 65, 2666 \u00011992\u0002 \u0003J. Appl. Chem. USSR 65, 2213 \u00011992\u0002\u0004."",""N. A. Stepanova, V. M. Smirnov, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 50, 465 \u00011977\u0002 \u0003J. Appl. Chem. USSR 50, 450 \u00011977\u0002\u0004."",""R. A. Bisengaliev, B. V. Novikov, V. B. Aleskovskii, V. E. Drozd, D. A. Ageev, V. I. Gubaidullin, and A. P. Savchenko, Fiz. Tverd. Tela \u0001S.- Peterburg\u0002 40, 820 \u00011998\u0002 \u0003Phys. Solid State 40, 754 \u00011998\u0002\u0004."",""S. I. Kol’tsov, V. B. Aleskovskii, G. N. Kuznetsova, and N. G. Roslyakova, Izv. Akad. Nauk SSSR, Neorg. Mater. 3, 1509 \u00011967\u0002 \u0003Inorg. Mater. 3, 1318 \u00011967\u0002\u0004.""]" +,,CrO2Cl2,– c,Si,84,[84],"[""""]","[""Fabrication and dielectric properties of multilayer Ta _2 O _5 /Al _2 O _3 nanolaminates""]","[["". K. Ezhovskii"",""A. I. Klusevich""]]",[2003],"[""Neorg. Mater.""]","[""Yu. K. Ezhovskii and A. I. Klusevich, Neorg. Mater. 39, 1230 \u00012003\u0002 \u0003Inorg. Mater. 39, 1062 \u00012003\u0002\u0004.""]" +,,CrO2Cl2,– c,Ge,84 and 117,"[84,117]","["""",""""]","[""Fabrication and dielectric properties of multilayer Ta _2 O _5 /Al _2 O _3 nanolaminates"",""Synthesis of hydroxyl--titanium--carbon solid compounds on diamond by the molecular-stratification method""]","[["". K. Ezhovskii"",""A. I. Klusevich""],[""S. K. Gordeev"",""E. P. Smirnov"",""S. I. Kol'tsov""]]","[2003,1982]","[""Neorg. Mater."",""Zh. Obshch. Khim.""]","[""Yu. K. Ezhovskii and A. I. Klusevich, Neorg. Mater. 39, 1230 \u00012003\u0002 \u0003Inorg. Mater. 39, 1062 \u00012003\u0002\u0004."",""S. K. Gordeev, E. P. Smirnov, and S. I. Kol’tsov, Zh. Obshch. Khim. 52, 1468 \u00011982\u0002 \u0003J. Gen. Chem. USSR 52, 1298 \u00011982\u0002\u0004.""]" +,,CrO2Cl2,– c,Ni,141,[141],"[""""]","[""Atomic-layer epitaxy of cadmium chalcogenides on gallium arsenide""]","[["". K. Ezhovskii"",""A. I. Klyuikov""]]",[2000],"[""Zr. Prikl. Khim.""]","[""Yu. K. Ezhovskii and A. I. Klyuikov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 73, 881 \u00012000\u0002 \u0003Russ. J. Appl. Chem. 73, 933 \u00012000\u0002\u0004.""]" +,,CrO2Cl2,– c,Ti,141,[141],"[""""]","[""Atomic-layer epitaxy of cadmium chalcogenides on gallium arsenide""]","[["". K. Ezhovskii"",""A. I. Klyuikov""]]",[2000],"[""Zr. Prikl. Khim.""]","[""Yu. K. Ezhovskii and A. I. Klyuikov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 73, 881 \u00012000\u0002 \u0003Russ. J. Appl. Chem. 73, 933 \u00012000\u0002\u0004.""]" +,,CrO2Cl2,H2O,glass,121,[121],"[""""]","[""Change in potential of anodized aluminum upon its modification with titanium dioxide""]","[[""A. A. Seitmagzimov"",""V. N. Pak"",""S. I. Kol'tsov""]]",[1985],"[""Zh. Prikl. Khim.""]","[""A. A. Seitmagzimov, V. N. Pak, and S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 58, 92 \u00011985\u0002 \u0003J. Appl. Chem. USSR 58, 85 \u00011985\u0002\u0004.""]" +,,CrO2Cl2,H2O,SiC,96,[96],"[""""]","[""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors""]","[[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""]]",[2002],"[""Zh. Prikl. Khim.""]","[""S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 75, 986 \u00012002\u0002 \u0003Russ. J. Appl. Chem. 75, 969 \u00012002\u0002\u0004.""]" +,,CrO2Cl2,MeOH,Si,93,[93],"[""""]","[""Preparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel""]","[[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""]]",[1969],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 980 \u00011969\u0002\u0004.""]" +,,CrO2Cl2,– c,polymer,103,[103],"[""""]","[""Structural effects of silica surfaces on molecularly superposed titanium-oxygen layers""]","[[""V. N. Pak""]]",[1976],"[""Zh. Fiz. Khim.""]","[""V. N. Pak, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 50, 1266 \u00011976\u0002 \u0003Russ. J. Phys. Chem. 50, 758 \u00011976\u0002\u0004.""]" +,,CrO2Cl2,H2,SiO2 gel,142,[142],"[""""]","[""Growth of CdSe - and CdTe -Based Nanostructures on Silicon""]","[["". K. Ezhovskii"",""D. P. Mikhaevich""]]",[2004],"[""Neorg. Mater.""]","[""Yu. K. Ezhovskii and D. P. Mikhaevich, Neorg. Mater. 40, 1043 \u00012004\u0002 \u0003Inorg. Mater. 40, 909 \u00012004\u0002\u0004.""]" +,CrxAlyOz,CrO2Cl2,AlMe3,Si,93,[93],"[""""]","[""Preparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel""]","[[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""]]",[1969],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 980 \u00011969\u0002\u0004.""]" diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_007_table_002/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_007_table_002/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..164bc88f192bc538a71d6fa1d69fc1f79f005f3f --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_007_table_002/gold.csv @@ -0,0 +1,23 @@ +Z,Material,Reactant A,Reactant B,Substrate,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +26,Iron,,,,,[],[],[],[],[],[],[] +,FeOx,FeCl3,– c,SiO2 gel,143,[143],"[""""]","[""Fabrication of low-dimension CdSe structures by atomic layer epitaxy""]","[[""D. P. Mikhaevich"","". K. Ezhovskii""]]",[2003],"[""Zh. Prikl. Khim.""]","[""D. P. Mikhaevich and Yu. K. Ezhovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 76, 1238 \u00012003\u0002 \u0003Russ. J. Appl. Chem. 76, 1197 \u00012003\u0002\u0004.""]" +30,Zinc,,,,,[],[],[],[],[],[],[] +,ZnO,ZnCl2,H2O,SiO2 gel,144,[144],"[""""]","[""Reaction of tin tetrachloride with silica gel""]","[[""R. R. Rachkovskii"",""S. I. Kol'tsov"",""V. B. Aleskovskii""]]",[1970],"[""Zh. Neorg. Khim.""]","[""R. R. Rachkovskii, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Neorg. Khim. 15, 3158 \u00011970\u0002 \u0003Russ. J. Inorg. Chem. 15, 1646 \u00011970\u0002\u0004.""]" +,ZnS,ZnCl2,H2S,SiO2 gel,86,[86],"[""""]","[""Synthesis of oxide superalloys by ML--ALE method""]","[[""V. E. Drozd"",""A. A. Tulub"",""V. B. Aleskovskii"",""D. V. Korol'kov""]]",[1994],"[""Appl. Surf. Sci.""]","[""V. E. Drozd, A. A. Tulub, V. B. Aleskovskii, and D. V. Korol’kov, Appl. Surf. Sci. 82/83, 587 \u00011994\u0002.""]" +,,ZnEt2,H2S,SiO2,145,[145],"[""""]","[""Synthesis of conducting oxides by ML--ALE""]","[[""V. E. Drozd"",""V. B. Aleskovskii""]]",[1994],"[""Appl. Surf. Sci.""]","[""V. E. Drozd and V. B. Aleskovskii, Appl. Surf. Sci. 82/83, 591 \u00011994\u0002.""]" +32,Germanium,,,,,[],[],[],[],[],[],[] +,GeO2,GeCl4,H2O,SiO2 gel,1 and 146,"[1,146]","["""",""""]","[""Interaction of titanium and germanium tetrachlorides with hydroxylated silicon dioxide"",""""]","[[""A. M Shevjakov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""],[]]","[1967,null]","[""Chemistry of high temperature materials. Proceedings of 2nd USSR conference on high temperature chemistry of oxides, November 26-29, 1965, Leningrad, USSR"",""""]","[""A. M. Shevjakov, G. N. Kuznetsova, and V. B. Aleskovskii, in Chemistry of High-Temperature Materials, Proceedings of the Second USSR Conference on High-Temperature Chemistry of Oxides, Leningrad, USSR, 26–29 November 1965 \u0001Nauka, Leningrad, USSR, 1967\u0002, pp. 149–155, in Russian."",""S. I. Kol’tsov, V. B. Aleskovskii, G. N. Kuznetsova, and N. G. Roslyakova, Izv. Akad. Nauk SSSR, Neorg. Mater. 3, 1509 \u00011967\u0002 \u0003Inorg. Mater. 3, 1318 \u00011967\u0002\u0004.""]" +38,Cadmium,,,,,[],[],[],[],[],[],[] +,CdS,Cd,S,GaAs,147,[147],"[""""]","[""MOLECULAR LAYER EPITAXY""]","[[""J. Nishizawa"",""H. Abe"",""T. Kurabayashi""]]",[1985],"[""J. Electrochem. Soc.""]","[""J. Nishizawa, H. Abe, and T. Kurabayashi, J. Electrochem. Soc. 132, 1197 \u00011985\u0002.""]" +,,CdMe2,H2S,SiO2,145,[145],"[""""]","[""Synthesis of conducting oxides by ML--ALE""]","[[""V. E. Drozd"",""V. B. Aleskovskii""]]",[1994],"[""Appl. Surf. Sci.""]","[""V. E. Drozd and V. B. Aleskovskii, Appl. Surf. Sci. 82/83, 591 \u00011994\u0002.""]" +,CdSe,Cd,Se,GaAs,147 and 148,"[147,148]","["""",""""]","[""MOLECULAR LAYER EPITAXY"",""A study of ZnTe films grown on glass substrates using an atomic layer evaporation method""]","[[""J. Nishizawa"",""H. Abe"",""T. Kurabayashi""],[""M. Ahonen"",""M. Pessa"",""T. Suntola""]]","[1985,1980]","[""J. Electrochem. Soc."",""Thin Solid Films""]","[""J. Nishizawa, H. Abe, and T. Kurabayashi, J. Electrochem. Soc. 132, 1197 \u00011985\u0002."",""M. Ahonen, M. Pessa, and T. Suntola, Thin Solid Films 65, 301 \u00011980\u0002.""]" +,,CdMe2,H2Se,SiO2,145,[145],"[""""]","[""Synthesis of conducting oxides by ML--ALE""]","[[""V. E. Drozd"",""V. B. Aleskovskii""]]",[1994],"[""Appl. Surf. Sci.""]","[""V. E. Drozd and V. B. Aleskovskii, Appl. Surf. Sci. 82/83, 591 \u00011994\u0002.""]" +,,CdMe2,H2Se,"glass, GaAs",149,[149],"[""""]","[""ATOMIC-LAYER GROWTH OF GaAs BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY""]","[[""Y. Aoyagi"",""A. Doi"",""S. Iwai"",""S. Namba""]]",[1987],"[""J. Vac. Sci. Technol., B""]","[""Y. Aoyagi, A. Doi, S. Iwai, and S. Namba, J. Vac. Sci. Technol. B 5, 1460 \u00011987\u0002.""]" +,CdTe,Cd,Te,GaAs,147,[147],"[""""]","[""MOLECULAR LAYER EPITAXY""]","[[""J. Nishizawa"",""H. Abe"",""T. Kurabayashi""]]",[1985],"[""J. Electrochem. Soc.""]","[""J. Nishizawa, H. Abe, and T. Kurabayashi, J. Electrochem. Soc. 132, 1197 \u00011985\u0002.""]" +,,Cd,Te,Si,148,[148],"[""""]","[""A study of ZnTe films grown on glass substrates using an atomic layer evaporation method""]","[[""M. Ahonen"",""M. Pessa"",""T. Suntola""]]",[1980],"[""Thin Solid Films""]","[""M. Ahonen, M. Pessa, and T. Suntola, Thin Solid Films 65, 301 \u00011980\u0002.""]" +50,Tin,,,,,[],[],[],[],[],[],[] +,SnO2,SnCl4,H2O,SiO2 gel,111 and 150,"[111,150]","["""",""""]","[""Electrical properties of the surface of germanium in contact with transition-metal oxides formed by the molecular deposition method"",""Spectroscopic study of the interaction of an epoxy resin with the surface of glass fillers modified by molecular lamination""]","[[""V. B. Aleskovskii"",""V. E. Drozd"",""V. F. Kiselev"",""S. N. Kozlov"",""S. I. Kol'tsov"",""A. S. Petrov"",""G. S. Plotnikov""],[""V. B. Kopylov"",""M. N. Tsvetkova"",""V. N. Pak"",""A. A. Malygin"",""S. I. Kol'tsov""]]","[1979,1981]","[""Fiz. Tekh. Poluprovodn."",""Zh. Prikl. Khim.""]","[""V. B. Aleskovskii, V. E. Drozd, V. F. Kiselev, S. N. Kozlov, S. I. Kol’tsov, A. S. Petrov, and G. S. Plotnikov, Fiz. Tekh. Poluprovodn. \u0001S.-Peterburg\u0002 13, 1397 \u00011979\u0002 \u0003Sov. Phys. Semicond. 13, 817 \u00011979\u0002\u0004."",""V. B. Kopylov, M. N. Tsvetkova, V. N. Pak, A. A. Malygin, and S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 54, 293 \u00011981\u0002 \u0003J. Appl. Chem. USSR 54, 186 \u00011981\u0002\u0004.""]" +,,SnMe4,N2O4,Si,151,[151],"[""""]","[""Rapid vapor deposition of highly conformal silica nanolaminates""]","[[""D. Hausmann"",""J. Becker"",""S. L. Wang"",""R. G. Gordon""]]",[2002],"[""Science""]","[""D. Hausmann, J. Becker, S. L. Wang, and R. G. Gordon, Science 298, 402 \u00012002\u0002.""]" +,,SnEt4,N2O4,Si,151,[151],"[""""]","[""Rapid vapor deposition of highly conformal silica nanolaminates""]","[[""D. Hausmann"",""J. Becker"",""S. L. Wang"",""R. G. Gordon""]]",[2002],"[""Science""]","[""D. Hausmann, J. Becker, S. L. Wang, and R. G. Gordon, Science 298, 402 \u00012002\u0002.""]" +73,Tantalum,,,,,[],[],[],[],[],[],[] +,Ta2O5,TaCl5,H2O,"Si, Al",91,[91],"[""""]","[""Study of the stoichiometry of the products formed in the reaction of trichlorosilane with the functional groups of polysilisic acid""]","[[""S. I. Kol'tsov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""]]",[1967],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, G. N. Kuznetsova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 40, 2774 \u00011967\u0002 \u0003J. Appl. Chem. USSR 40, 2644 \u00011967\u0002\u0004.""]" diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_007_table_003/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_007_table_003/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..8063ba4d98c267d4687b0e856a7373cf53251992 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_007_table_003/gold.csv @@ -0,0 +1,11 @@ +Name,Abbreviation,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +Atomic layer deposition,ALD,19,[19],"[""""]","[""Atomic layer epitaxy in the growth of polycrystalline and amorphous films""]","[[""M. Leskel a""]]",[1990],"[""Acta Polytech. Scand., Chem. Technol. Ser.""]","[""M. Leskelä, Acta Polytech. Scand., Chem. Technol. Ser. 195, 67 \u00011990\u0002.""]" +Atomic layer epitaxy,ALE,2,[2],"[""""]","[""Method for producing compound thin films""]","[[""T. Suntola"",""J. Antson""]]",[null],"[""""]","[""T. Suntola and J. Antson, U.S. Patent No. 4,058,430 \u000115 November 1977\u0002.""]" +Atomic layer evaporation,ALE,154,[154],"[""""]","[""Self-limiting diamond growth from alternating CF _x and H fluxes""]","[[""S. F. Komarov"",""J. J. Lee"",""J. B. Hudson"",""M. P. D'Evelyn""]]",[1998],"[""Diamond Relat. Mater.""]","[""S. F. Komarov, J. J. Lee, J. B. Hudson, and M. P. D’Evelyn, Diamond Relat. Mater. 7, 1087 \u00011998\u0002.""]" +Atomic layer growth,ALG,155,[155],"[""""]","[""NOVEL METHOD FOR CHEMICAL VAPOR-DEPOSITION AND ATOMIC LAYER EPITAXY USING RADICAL CHEMISTRY""]","[[""T. I. Hukka"",""R. E. Rawles"",""M. P. D'Evelyn""]]",[1993],"[""Thin Solid Films""]","[""T. I. Hukka, R. E. Rawles, and M. P. D’Evelyn, Thin Solid Films 225, 212 \u00011993\u0002.""]" +Chemical assembly,,126,[126],"[""""]","[""Synthesis and characterization of nanosized titanium oxide films on the (0001) - Al _2 O _3 surface""]","[[""N. V. Dolgushev"",""A. A. Malkov"",""A. A. Malygin"",""S. A. Suvorov"",""A. V. Shchukarev"",""A. V. Beljaev"",""V. A. Bykov""]]",[1997],"[""Thin Solid Films""]","[""N. V. Dolgushev, A. A. Malkov, A. A. Malygin, S. A. Suvorov, A. V. Shchukarev, A. V. Beljaev, and V. A. Bykov, Thin Solid Films 293, 91 \u00011997\u0002.""]" +Molecular deposition,,117,[117],"[""""]","[""Synthesis of hydroxyl--titanium--carbon solid compounds on diamond by the molecular-stratification method""]","[[""S. K. Gordeev"",""E. P. Smirnov"",""S. I. Kol'tsov""]]",[1982],"[""Zh. Obshch. Khim.""]","[""S. K. Gordeev, E. P. Smirnov, and S. I. Kol’tsov, Zh. Obshch. Khim. 52, 1468 \u00011982\u0002 \u0003J. Gen. Chem. USSR 52, 1298 \u00011982\u0002\u0004.""]" +Molecular lamination,,156,[156],"[""""]","[""Temperature-dependence of the growth orientation of atomic layer growth MgO""]","[[""R. Huang"",""A. H. Kitai""]]",[1992],"[""Appl. Phys. Lett.""]","[""R. Huang and A. H. Kitai, Appl. Phys. Lett. 61, 1450 \u00011992\u0002.""]" +Molecular layer epitaxy,MLE,153,[153],"[""""]","[""Atomic layer deposition of BN thin films""]","[[""B. M rlid"",""M. Ottosson"",""U. Pettersson"",""K. Larsson"",""J.-O. Carlsson""]]",[2002],"[""Thin Solid Films""]","[""B. Mårlid, M. Ottosson, U. Pettersson, K. Larsson, and J.-O. Carlsson, Thin Solid Films 402, 167 \u00012002\u0002.""]" +Molecular layering,ML,1,[1],"[""""]","[""Interaction of titanium and germanium tetrachlorides with hydroxylated silicon dioxide""]","[[""A. M Shevjakov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""]]",[1967],"[""Chemistry of high temperature materials. Proceedings of 2nd USSR conference on high temperature chemistry of oxides, November 26-29, 1965, Leningrad, USSR""]","[""A. M. Shevjakov, G. N. Kuznetsova, and V. B. Aleskovskii, in Chemistry of High-Temperature Materials, Proceedings of the Second USSR Conference on High-Temperature Chemistry of Oxides, Leningrad, USSR, 26–29 November 1965 \u0001Nauka, Leningrad, USSR, 1967\u0002, pp. 149–155, in Russian.""]" +Molecular stratification,,105,[105],"[""""]","[""Synthesis of oxide layers on silicon polydioxide by molecular deposition with methoxyl functional groups""]","[[""V. M. Smirnov"",""A. A. Malkov"",""R. R. Rachovskii""]]",[1992],"[""Zh. Prikl. Khim.""]","[""V. M. Smirnov, A. A. Malkov, and R. R. Rachovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 65, 2666 \u00011992\u0002 \u0003J. Appl. Chem. USSR 65, 2213 \u00011992\u0002\u0004.""]" diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_009_table_004/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_009_table_004/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..ddb5b9b0eb267eff50dc5175f88d98701ebe2144 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_009_table_004/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +5,Boron,,,,[],[],[],[],[],[],[] +,B2O3,BBr3,H2O,85,[85],"[""""]","[""FORMATION OF THIN ALUMINUM-OXIDE FILMS""]","[[""G. V. Anikeev"","". K. Ezhovskii"",""S. I. Kol'tsov""]]",[1988],"[""Neorg. Mater.""]","[""G. V. Anikeev, Yu. K. Ezhovskii, and S. I. Kol’tsov, Izv. Akad. Nauk SSSR, Neorg. Mater. 24, 619 \u00011988\u0002 \u0003Inorg. Mater. 24, 514 \u00011988\u0002\u0004.""]" +,BN,BCl3,NH3,158,[158],"[""""]","[""THE SURFACE-MORPHOLOGY OF ATOMIC LAYER DEPOSITED MAGNESIA""]","[[""R. Huang"",""A. H. Kitai""]]",[1993],"[""J. Mater. Sci. Lett.""]","[""R. Huang and A. H. Kitai, J. Mater. Sci. Lett. 12, 1444 \u00011993\u0002.""]" +,,BBr3,NH3,159,[159],"[""""]","[""Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films""]","[[""M. Putkonen"",""T. Sajavaara"",""L. Niinist o""]]",[2000],"[""J. Mater. Chem.""]","[""M. Putkonen, T. Sajavaara, and L. Niinistö, J. Mater. Chem. 10, 1857 \u00012000\u0002.""]" +,BxPyOz,B(OMe)3,POCl3,88 and 89,"[88,89]","["""",""""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium"",""Thermal oxidation of silicon carbide with surface modification by the molecular layering method""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""L. V. Miroshnichenko"",""A. A. Malygin"",""S. I. Kol'tsov""]]","[1974,1985]","[""Zh. Prikl. Khim."",""Ogneupory""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 47, 2332 \u00011974\u0002 \u0003J. Appl. Chem. USSR 47, 2390 \u00011974\u0002\u0004."",""L. V. Miroshnichenko, A. A. Malygin, and S. I. Kol’tsov, Ogneupory 26, 22 \u00011985\u0002 \u0003Refractories 26, 82 \u00011985\u0002\u0004.""]" +6,Carbon,,,,[],[],[],[],[],[],[] +,C b,CFx,H c,160,[160],"[""""]","[""Magnesium aluminate thin films by atomic layer deposition from organometallic precursors and water""]","[[""M. Putkonen"",""M. Nieminen"",""L. Niinist o""]]",[2004],"[""Thin Solid Films""]","[""M. Putkonen, M. Nieminen, and L. Niinistö, Thin Solid Films 466, 103 \u00012004\u0002.""]" +,,CCl3,H c,161,[161],"[""""]","[""Properties of [Mg _2 (thd) _4 ] as a Precursor for Atomic Layer Deposition of MgO Thin Films and Crystal Structures of [Mg _2 (thd) _4 ] and [Mg(thd) _2 (EtOH) _2 ]""]","[[""T. Hatanp a a"",""J. Ihanus"",""J. Kansikas"",""I. Mutikainen"",""M. Ritala"",""M. Leskel a""]]",[1999],"[""Chem. Mater.""]","[""T. Hatanpää, J. Ihanus, J. Kansikas, I. Mutikainen, M. Ritala, and M. Leskelä, Chem. Mater. 11, 1846 \u00011999\u0002.""]" +12,Magnesium,,,,[],[],[],[],[],[],[] +,MgO,MgCp2,H2O,162–166,"[162,163,164,165,166]","["""","""","""","""",""""]","[""Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy"",""CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters"",""Atomic layer epitaxy of CdTe , MgTe and MnTe growth of CdTe/MnTe tilted superlattices on vicinal surfaces"",""Atomic layer epitaxy for producing EL thin films"",""Properties of amorphous Al _2 O _3 films grown by ALE""]","[[""M. Putkonen"",""L.-S. Johansson"",""E. Rauhala"",""L. Niinist o""],[""J. M. Hartmann"",""J. Cibert"",""F. Kany"",""H. Mariette"",""M. Charleux"",""P. Alleysson"",""R. Langer"",""G. Feuillet""],[""J. M. Hartmann"",""M. Charleux"",""H. Mariette"",""J. L. Rouvi ere""],[""T. Suntola"",""J. Antson"",""A. Pakkala"",""S. Lindfors""],[""J. Aarik"",""A. Aidla"",""A. Jaek"",""A.-A. Kiisler"",""A.-A. Tammik""]]","[1999,1996,1997,1980,1990]","[""J. Mater. Chem."",""J. Appl. Phys."",""Appl. Surf. Sci."",""SID International Symposium in San Diego, California, 29 April-1 May 1980, Digest of Technical Papers"",""Acta Polytech. Scand., Ser. Chem. Technol. Metall.""]","[""M. Putkonen, L.-S. Johansson, E. Rauhala, and L. Niinistö, J. Mater. Chem. 9, 2449 \u00011999\u0002."",""J. M. Hartmann, J. Cibert, F. Kany, H. Mariette, M. Charleux, P. Alleysson, R. Langer, and G. Feuillet, J. Appl. Phys. 80, 6257 \u00011996\u0002."",""J. M. Hartmann, M. Charleux, H. Mariette, and J. L. Rouvière, Appl. Surf. Sci. 112, 142 \u00011997\u0002."",""T. Suntola, J. Antson, A. Pakkala, and S. Lindfors, in SID International Symposium Digest of Technical Papers, San Diego, California, 29 April–1 May 1980 \u0001SID, Los Angeles, California, 1980\u0002, pp. 108–109."",""J. Aarik, A. Aidla, A. Jaek, A.-A. Kiisler, and A.-A. Tammik, Acta Polytech. Scand., Ser. Chem. Technol. Metall. 195, 201 \u00011990\u0002.""]" +,,Mg(thd)2,H2O2,167,[167],"[""""]","[""GROWTH AND CHARACTERIZATION OF ALUMINUM-OXIDE THIN-FILMS DEPOSITED FROM VARIOUS SOURCE MATERIALS BY ATOMIC LAYER EPITAXY AND CHEMICAL VAPOR-DEPOSITION PROCESSES""]","[[""L. Hiltunen"",""H. Kattelus"",""M. Leskel a"",""M. M akel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen"",""M. Tiitta""]]",[1991],"[""Mater. Chem. Phys.""]","[""L. Hiltunen, H. Kattelus, M. Leskelä, M. Mäkelä, L. Niinistö, E. Nykänen, P. Soininen, and M. Tiitta, Mater. Chem. Phys. 28, 379 \u00011991\u0002.""]" +,,Mg(thd)2,O3,168,[168],"[""""]","[""LAYERED TANTALUM-ALUMINUM OXIDE-FILMS DEPOSITED BY ATOMIC LAYER EPITAXY""]","[[""H. Kattelus"",""M. Ylilammi"",""J. Saarilahti"",""J. Antson"",""S. Lindfors""]]",[1993],"[""Thin Solid Films""]","[""H. Kattelus, M. Ylilammi, J. Saarilahti, J. Antson, and S. Lindfors, Thin Solid Films 225, 296 \u00011993\u0002.""]" +,MgTe,Mg,Te,169 and 170,"[169,170]","["""",""""]","[""Determination of P/Al ratio in phosphorus-doped aluminium oxide thin films by XRF , RBS and FTIR"",""Studies on the morphology of Al _2 O _3 thin films grown by atomic layer epitaxy""]","[[""M. Nieminen"",""L. Niinist o"",""R. Lappalainen""],[""M. Ritala"",""H. Saloniemi"",""M. Leskel a"",""T. Prohaska"",""G. Friedbacher"",""M. Grassenbauer""]]","[1995,1996]","[""Microchim. Acta"",""Thin Solid Films""]","[""M. Nieminen, L. Niinistö, and R. Lappalainen, Microchim. Acta 119, 13 \u00011995\u0002."",""M. Ritala, H. Saloniemi, M. Leskelä, T. Prohaska, G. Friedbacher, and M. Grassenbauer, Thin Solid Films 286, 54 \u00011996\u0002.""]" +13,Aluminum,,,,[],[],[],[],[],[],[] +,Al2O3,AlCl3,H2O,"76, 77, 83, 90, 91, 91, and 171–184","[76,77,83,90,91,171,172,173,174,175,176,177,178,179,180,181,182,183,184]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""Synthesis and investigation of aluminum--oxygen layers on the surface of silica"",""Ultramicrochemical investigation of chromium oxide layers synthesized by molecular layering on single-crystal germanium and silicon surfaces"",""Study of aluminosilicate systems synthesized by the molecular-layering method"",""Interaction of trichlorosilane with silica gel"",""Study of the stoichiometry of the products formed in the reaction of trichlorosilane with the functional groups of polysilisic acid"",""Introducing atomic layer epitaxy for the deposition of optical thin films"",""Properties of Ta _2 O _3 -based dielectric nanolaminates deposited by atomic layer epitaxy"",""Dependence of atomic layer-deposited Al _2 O _3 films characteristics on growth temperature and Al precursors of Al ( CH _3 ) _3 and AlCl _3"",""Large-area atomic layer deposition and characterization of Al _2 O _3 film grown using AlCl _3 and H _2 O"",""Preparation and characterization of phosphorus-doped aluminum oxide thin films"",""Determination of aluminium in AlCl _3 and Al _2 O _3 modified silica catalyst supports"",""Multilayered tantalum-aluminum oxide films grown by atomic layer deposition"",""Development of dielectric properties of niobium oxide, tantalum oxide, and aluminum oxide based nanolayered materials"","""",""AALUMINUM-OXIDE THIN-FILM DEPOSITION FROM ALUMINUM-CHLORIDE AND 2-METHYL-2-PROPANOL USING THE ATOMIC LAYER EPITAXY PROCESS"",""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Atomic layer deposition of Al _2 O _3 films using AlCl _3 and Al(O ^i Pr) _3 as precursors"",""SURFACE PHOTOCHEMICAL PHENOMENA IN LASER CHEMICAL VAPOR-DEPOSITION"",""Sequential surface chemical-reaction limited growth of high-quality Al _2 O _3 dielectrics""]","[[""S. I. Kol'tsov"",""V. B. Kopylov"",""V. M. Smirnov"",""V. B. Aleskovskii""],[""A. P. Nechiporenko"",""T. M. Sukhareva"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""S. I. Kol'tsov"",""V. M. Smirnov"",""R. R. Rachkovskii"",""T. V. Malalaeva"",""V. B. Aleskovskii""],[""S. I. Kol'tsov""],[""S. I. Kol'tsov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""],[""D. Riihel a"",""M. Ritala"",""R. Matero"",""M. Leskel a""],[""K. Kukli"",""J. Ihanus"",""M. Ritala"",""M. Leskel a""],[""S. J. Yun"",""K. H. Lee"",""J. Skarp"",""H. R. Kim"",""K. S. Nam""],[""S. J. Yun"",""J. S. Kang"",""M. C. Paek"",""K. S. Nam""],[""M. Tiitta"",""E. Nyk anen"",""P. Soininen"",""L. Niinist o"",""M. Leskel a"",""R. Lappalainen""],[""M. Nieminen"",""L. Niinist o""],[""Y. S. Kim"",""J. S. Kang"",""S. J. Yun"",""K. I. Cho""],[""K. Kukli"",""M. Ritala"",""M. Leskel a""],[],[""M. Leskel a"",""L. Niinist o"",""E. Nyk anen"",""P. Soininen"",""M. Tiitta""],[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""P. I. R ais anen"",""M. Ritala"",""M. Leskel a""],[""G. S. Higashi"",""L. J. Rothberg""],[""G. S. Higashi"",""C. G. Fleming""]]","[1976,1978,1978,1965,1967,1996,1997,1997,1998,1998,1999,1999,2001,null,1990,2000,2002,1985,1989]","[""Zh. Prikl. Khim."",""Zh. Prikl. Kim."",""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Thin Solid Films"",""J. Electrochem. Soc."",""J. Vac. Sci. Technol., A"",""J. Korean Phys. Soc."",""Mater. Res. Bull."",""Fresenius J. Anal. Chem."",""J. Korean Phys. Soc."",""J. Electrochem. Soc."","""",""Acta Polytech. Scand., Chem. Technol. Ser."",""Science"",""J. Mater. Chem."",""J. Vac. Sci. Tech., B"",""Appl. Phys. Lett.""]","[""S. I. Kol’tsov, V. B. Kopylov, V. M. Smirnov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 49, 516 \u00011976\u0002 \u0003J. Appl. Chem. USSR 49, 525 \u00011976\u0002\u0004."",""A. P. Nechiporenko, T. M. Sukhareva, A. A. Malygin, S. I. 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Chem. 12, 1415 \u00012002\u0002."",""G. S. Higashi and L. J. Rothberg, J. Vac. Sci. Technol. B 3, 1460 \u00011985\u0002."",""G. S. Higashi and C. G. Fleming, Appl. Phys. Lett. 55, 1963 \u00011989\u0002.""]" +,,AlCl3,O2,185 and 186,"[185,186]","["""",""""]","[""The reaction pathway for the growth of alumina on high surface area alumina and in ultrahigh vacuum by a reaction between trimethyl aluminum and water"",""Infrared spectroscopy of trimethylaluminum and dimethylaluminum chloride adsorbed on alumina""]","[[""C. Soto"",""W. T. Tysoe""],[""C. Soto"",""R. Wu"",""D. W. Bennett"",""W. T. Tysoe""]]","[1991,1994]","[""J. Vac. Sci. Technol., A"",""Chem. Mater.""]","[""C. Soto and W. T. Tysoe, J. Vac. Sci. Technol. A 9, 2686 \u00011991\u0002."",""C. Soto, R. Wu, D. W. Bennett, and W. T. Tysoe, Chem. Mater. 6, 1705 \u00011994\u0002.""]" +,,AlCl3,ROH d,"173, 181, and 187","[173,181,187]","["""","""",""""]","[""Dependence of atomic layer-deposited Al _2 O _3 films characteristics on growth temperature and Al precursors of Al ( CH _3 ) _3 and AlCl _3"",""Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources"",""Electrical properties of Si -- Al _2 O _3 structures grown by ML -- ALE""]","[[""S. J. Yun"",""K. H. Lee"",""J. Skarp"",""H. R. Kim"",""K. S. Nam""],[""M. Ritala"",""K. Kukli"",""A. Rahtu"",""P. I. R ais anen"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen""],[""V. E. Drozd"",""A. P. Baraban"",""I. O. Nikiforova""]]","[1997,2000,1994]","[""J. Vac. Sci. Technol., A"",""Science"",""Appl. Surf. Sci.""]","[""S. J. Yun, K. H. Lee, J. Skarp, H. R. Kim, and K. S. Nam, J. Vac. Sci. Technol. A 15, 2993 \u00011997\u0002."",""M. Ritala, K. Kukli, A. Rahtu, P. I. Räisänen, M. Leskelä, T. Sajavaara, and J. Keinonen, Science 288, 319 \u00012000\u0002."",""V. E. Drozd, A. P. Baraban, and I. O. Nikiforova, Appl. Surf. Sci. 82/83, 583 \u00011994\u0002.""]" +,,AlCl3,Al(OEt)3,188,[188],"[""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""]]",[1994],"[""Appl. Surf. Sci.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002.""]" +,,AlCl3,Al(OiPr)3,188 and 189,"[188,189]","["""",""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry"",""Surface chemistry of Al _2 O _3 deposition using Al ( CH _3 ) _3 and H _2 O in a binary reaction sequence""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""],[""A. C. Dillon"",""A. W. Ott"",""J. D. Way"",""S. M. George""]]","[1994,1995]","[""Appl. Surf. Sci."",""Surf. Sci.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002."",""A. C. Dillon, A. W. Ott, J. D. Way, and S. M. George, Surf. Sci. 322, 230 \u00011995\u0002.""]" +,,AlBr3,H2O,92,[92],"[""""]","[""Oxidation of polyhydrosiloxane prepared by molecular layering""]","[[""S. I. Kol'tsov""]]",[2001],"[""Zh. Obshch. Khim.""]","[""S. I. Kol’tsov, Zh. Obshch. Khim. 71, 1616 \u00012001\u0002 \u0003Russ. J. Gen. Chem. 71, 1531 \u00012001\u0002\u0004.""]" +,,AlMe3,H2O,"166, 179, and 190–262","[166,179,190,191,192,193,194,195,196,197,198,199,200,201,202,203,204,205,206,207,208,209,210,211,212,213,214,215,216,217,218,219,220,221,222,223,224,225,226,227,228,229,230,231,232,233,234,235,236,237,238,239,240,241,242,243,244,245,246,247,248,249,250,251,252,253,254,255,256,257,258,259,260,261,262]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""Properties of amorphous Al _2 O _3 films grown by ALE"","""",""Surface reactions in Al _2 O _3 growth from trimethylaluminium and water by atomic layer epitaxy"",""Atomic layer controlled deposition of Al _2 O _3 films using binary reaction sequence chemistry"",""Al _2 O _3 thin film growth on Si (100) using binary reaction sequence chemistry"",""Modification of porous alumina membranes using Al _2 O _3 atomic layer controlled deposition"",""ALE -reactor for large area depositions"",""Properties of Al _2 O _3 -films deposited on silicon by atomic layer epitaxy"",""Substrate dependence on the optical properties of Al _2 O _3 films grown by atomic layer deposition"",""In situ monitoring of atomic layer controlled pore reduction in alumina tubular membranes using sequential surface reactions"",""Perfectly conformal TiN and Al _2 O _3 films deposited by atomic layer deposition"",""In situ characterization of atomic layer deposition processes by a mass spectrometer"",""Atomic layer deposited thin films for corrosion protection"",""High-resolution depth profiling in ultrathin Al _2 O _3 films on Si"",""IR and NMR study of the chemisorption of ammonia on trimethylaluminum-modified silica"",""Heterogenization of racemic ethylenebis(1-indenyl)zirconium dichloride on trimethylaluminum vapor modified silica surface"",""In situ mass spectrometry study on surface reactions in atomic layer deposition of Al _2 O _3 thin films from trimethylaluminum and water"",""Effect of water dose on the atomic layer deposition rate of oxide thin films"",""Atomic layer deposition of ultrathin and conformal Al _2 O _3 films on BN particles"",""Atomic layer deposition of Al _2 O _3 and SiO _2 on BN particles using sequential surface reactions"",""Atomic layer deposition of metal and transition metal nitride thin films and in situ mass spectrometry studies"",""Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina"",""In situ quartz crystal microbalance and quadrupole mass spectrometry studies of atomic layer deposition of aluminum oxide from trimethylaluminum and water"",""Atomic Layer Deposition of AlO _x for Thin Film Head Gap Applications"",""Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues"",""Atomic layer deposition of high permittivity oxides: film growth and in situ studies"",""Preparation by atomic layer deposition and characterisation of catalyst supports surfaced with aluminium nitride"",""Thin film atomic layer deposition equipment for semiconductor processing"",""Characterization of ALCVD - Al _2 O _3 and ZrO _2 layer using X -ray photoelectron spectroscopy"",""Characterisation of ALCVD Al _2 O _3 -- ZrO _2 nanolaminates, link between electrical and structural properties"",""Interface and material characterization of thin Al _2 O _3 layers deposited by ALD using TMA / H _2 O"",""ZnO / Al _2 O _3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements"",""Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition"",""Electrical characterization of thin Al _2 O _3 films grown by atomic layer deposition on silicon and various metal substrates"",""X-ray Reflectivity Characterization of ZnO / Al _2 O _3 Multilayers Prepared by Atomic Layer Deposition"",""Advanced characterization of high-k materials: A nuclear approach"",""Growth of ZnO / Al _2 O _3 alloy films using atomic layer deposition techniques"",""Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices"",""Atomic layer deposited protective coatings for micro-electromechanical systems"",""Effect of precursor concentration in atomic layer deposition of Al _2 O _3"",""Crystallization behavior of thin ALD - Al _2 O _3 films"",""Physical characterization of thin ALD - Al _2 O _3 films"",""Growth per cycle in atomic layer deposition: real application examples of a theoretical model"",""Surface treatment for high-quality Al _2 O _3 and HfO _2 layers deposited on HF -dipped surface by atomic layer deposition"",""Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides"",""Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon"",""GaAs metal-oxide-semiconductor field-effect transistor with nanometerthin dielectric grown by atomic layer deposition"",""Al _2 O _3 nanotubes and nanorods fabricated by coating and filling of carbon nanotubes with atomic-layer deposition"",""Low-temperature Al _2 O _3 atomic layer deposition"",""Effect of Hf Sources, Oxidizing Agents, and NH _3 / Ar Plasma on the Properties of HfAlO _x Films Prepared by Atomic Layer Deposition"",""Physical properties of ALD - Al _2 O _3 in a DRAM -capacitor equivalent structure comparing interfaces and oxygen precursors"",""Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: growth mode modelling and transmission electron microscopy"",""Island growth as a growth mode in atomic layer deposition: a phenomenological model"",""Ammonia pretreatment for high- appa dielectric growth on silicon"",""Nucleation and growth during the atomic layer deposition of W on Al _2 O _3 and Al _2 O _3 on W"",""Reduction of Incubation Period by Employing OH -Terminated Si (001) Substrates in the Atomic Layer Deposition of Al _2 O _3"",""Structural and optical properties of as-synthesized, Ga _2 O _3 -coated, and Al _2 O _3 -coated GaN nanowires"",""Nitrogen incorporation engineering and electrical properties of high-k gate dielectric ( HfO _2 and Al _2 O _3 ) films on Si (100) substrate"",""X-ray photoelectron spectroscopy characterisation of high-k dielectric Al _2 O _3 and HfO _2 layers deposited on SiO _2 /Si surface"",""Atomic Layer Deposition of Al _2 O _3 Films on Polyethylene Particles"",""Physical characterization of mixed HfAlO _x layers by complementary analysis techniques"",""VUV spectroscopic ellipsometry applied to the characterization of high- k dielectrics"",""Comparison of the electrical properties of high-k gate dielectric ( HfO _2 and Al _2 O _3 ) films with Pt or n(+)-polycrystalline-silicon gate"",""Atomic layer deposition of oxide films -- growth, characterisation and reaction mechanism studies"",""Structural and electrical characterization of Al _2 O _3 /HfO _2 /Al _2 O _3 on strained SiGe"",""TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition"",""Ultrathin Film Encapsulation of an OLED by ALD"",""Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminium oxide from trimethylaluminium and water,"",""Low-temperature growth of thin films of Al _2 O _3 by sequential surface chemical reaction of trimethylaluminum and H _2 O _2"","""",""Comparative study of Al _2 O _3 optical crystalline thin films grown by vapor combinations of Al(CH _3 ) _3 /N _2 O and Al(CH _3 ) _3 /H _2 O _2"",""Fabrication of multilayers with growth controlled by sequential surface chemical reactions"",""In situ ellipsometric diagnostics for controlled growth of metal oxides with surface chemical reactions"",""Titanium oxide/aluminum oxide multilayer reflectors for \""water-window\"" wavelengths"",""Improvement in the Al _2 O _3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique""]","[[""J. Aarik"",""A. Aidla"",""A. Jaek"",""A.-A. Kiisler"",""A.-A. Tammik""],[],[""E.-L. Lakomaa"",""A. Root"",""T. Suntola""],[""A. W. Ott"",""K. C. McCarley"",""J. W. Klaus"",""J. D. Way"",""S. M. George""],[""A. W. Ott"",""J. W. Klaus"",""J. M. Johnson"",""S. M. George""],[""A. W. Ott"",""J. W. Klaus"",""J. M. Johnson"",""S. M. George"",""K. C. McCarley"",""J. D. Way""],[""J. I. Skarp"",""P. J. Soininen"",""P. T. Soininen""],[""P. Ericsson"",""S. Bengtsson"",""J. Skarp""],[""Y. Kim"",""S. M. Lee"",""C. S. Park"",""S. I. Lee"",""M. Y. Lee""],[""B. S. Berland"",""I. P. Gartland"",""A. W. Ott"",""S. M. George""],[""M. Ritala"",""M. Leskel a"",""J.-P. Dekker"",""C. Mutsaers"",""P. J. Soininen"",""J. Skarp""],[""M. Ritala"",""M. Juppo"",""K. Kukli"",""A. Rahtu"",""M. Leskel a""],[""R. Matero"",""M. Ritala"",""M. Leskel a"",""T. Salo"",""J. Aromaa"",""O. Fors en""],[""E. P. Gusev"",""M. Copel"",""E. Cartier"",""I. J. R. Baumvol"",""C. Krug"",""M. A. Gribelyuk""],[""R. L. Puurunen"",""A. Root"",""S. Haukka"",""E. I. Iiskola"",""M. Lindblad"",""A. O. I. Krause""],[""A. M. Uusitalo"",""T. T. Pakkanen"",""M. Kr oger-Laukkanen"",""L. Niinist o"",""K. Hakala"",""S. Paavola"",""B. L ofgren""],[""M. Juppo"",""A. Rahtu"",""M. Ritala"",""M. Leskel a""],[""R. Matero"",""A. Rahtu"",""M. Ritala"",""M. Leskel a"",""T. Sajavaara""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""M. Juppo""],[""R. L. Puurunen"",""M. Lindblad"",""A. Root"",""A. O. I. Krause""],[""A. Rahtu"",""T. Alaranta"",""M. Ritala""],[""A. Paranjpe"",""S. Gopinath"",""T. Omstead"",""R. Bubber""],[""E. P. Gusev"",""E. Cartier"",""D. A. Buchanan"",""M. Gribelyuk"",""M. Copel"",""H. Okorn-Schmidt"",""C. D'Emic""],[""A. Rahtu""],[""R. Puurunen""],[""O. Sneh"",""R. B. Clark-Phelps"",""A. R. Londergan"",""J. Winkler"",""T. E. Seidel""],[""H. Nohira"",""W. Tsai"",""W. Besling"",""E. Young"",""J. Petry"",""T. Conard"",""W. Vandervorst"",""S. De Gendt"",""M. Heyns"",""J. Maes"",""M. Tuominen""],[""W. F. A. Besling"",""E. Young"",""T. Conard"",""C. Zhao"",""R. Carter"",""W. Vandervorst"",""M. Caymax"",""S. De Gendt"",""M. Heyns"",""J. Maes"",""M. Tuominen"",""S. Haukka""],[""L. G. Gosset"",""J.-F. Damlencourt"",""O. Renault"",""D. Rouchon"","". Holliger"",""A. Ermolieff"",""I. Trimaille"",""J.-J. Ganem"",""F. Martin"",""M.-N. S em eria""],[""J. W. Elam"",""Z. A. Zechrist"",""S. M. George""],[""J. W. Elam"",""M. D. Groner"",""S. M. George""],[""M. D. Groner"",""J. W. Elam"",""F. H. Fabreguette"",""S. M. George""],[""J. M. Jensen"",""A. B. Oelkers"",""R. Toivola"",""D. C. Johnson"",""J. W. Elam"",""S. M. George""],[""B. Brijs"",""C. Huyghebaert"",""S. Nauwelaerts"",""M. Caymax"",""W. Vandervorst"",""K. Nakajima"",""K. Kimura"",""A. Bergmaier"",""G. D ollinger"",""W. N. Lennard"",""G. Terwagne"",""A. Vantomme""],[""J. W. Elam"",""S. M. George""],[""T. M. Mayer"",""J. W. Elam"",""S. M. George"",""P. G. Kotula"",""R. S. Goeke""],[""N. D. Hoivik"",""J. W. Elam"",""R. J. Linderman"",""V. M. Bright"",""S. M. George"",""Y. C. Lee""],[""R. Kuse"",""M. Kundu"",""T. Yasuda"",""N. Miyata"",""A. Toriumi""],[""S. Jakschik"",""U. Schroeder"",""T. Hecht"",""M. Gutsche"",""H. Seidl"",""J. W. Bartha""],[""S. Jakschik"",""U. Schroeder"",""T. Hecht"",""D. Krueger"",""G. Dollinger"",""A. Bergmaier"",""C. Luhmann"",""J. W. Bartha""],[""R. L. Puurunen""],[""J.-F. Damlencourt"",""O. Renault"",""A. Chabli"",""F. Martin"",""M.-N. S em eria""],[""M. M. Frank"",""Y. J. Chabal"",""G. D. Wilk""],[""M. M. Frank"",""Y. J. Chabal"",""M. L. Green"",""A. Delabie"",""B. Brijs"",""G. D. Wilk"",""M.-Y. Ho"",""E. B. O. da Rosa"",""I. J. R. Baumvol"",""F. C. Stedile""],[""P. D. Ye"",""G. D. Wilk"",""B. Yang"",""J. Kwo"",""S. N. G. Chu"",""S. Nakahara"",""H.-J. L. Gossmann"",""J. P. Mannaerts"",""M. Hong"",""K. K. Ng"",""J. Bude""],[""J. S. Lee"",""B. Min"",""K. Cho"",""S. Kim"",""J. Park"",""Y. T. Lee"",""N. S. Kim"",""M. S. Lee"",""S. O. Park"",""J. T. Moon""],[""M. D. Groner"",""F. H. Fabreguette"",""J. W. Elam"",""S. M. George""],[""T. Kawahara"",""K. Torii"",""R. Mitsuhashi"",""A. Muto"",""A. Horiuchi"",""H. Ito"",""H. Kitajima""],[""S. Jakschik"",""U. Schroeder"",""T. Hecht"",""D. Krueger"",""G. Dollinger"",""A. Bergmaier"",""C. Luhmann"",""J. W. Bartha""],[""R. L. Puurunen"",""W. Vandervorst"",""W. F. A. Besling"",""O. Richard"",""H. Bender"",""T. Conard"",""C. Zhao"",""A. Delabie"",""M. Caymax"",""S. De Gendt"",""M. Heyns"",""M. M. Viitanen"",""M. de Ridder"",""H. H. Brongersma"",""Y. Tamminga"",""T. Dao"",""T. de Win"",""M. Verheijen"",""M. Kaiser"",""M. Tuominen""],[""R. L. Puurunen"",""W. Vandervorst""],[""R. T. Brewer"",""M.-T. Ho"",""K. Z. Zhang"",""L. V. Goncharova"",""D. G. Starodub"",""T. Gustafsson"",""Y. J. Chabal"",""N. Moumen""],[""R. K. Grubbs"",""C. E. Nelson"",""N. J. Steinmetz"",""S. M. George""],[""S. S. Lee"",""J. Y. Baik"",""K.-S. An"",""Y. D. Suh"",""J.-H. Oh"",""Y. Kim""],[""M. Kang"",""J.-S. Lee"",""S.-K. 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Phys., Part 2 33, L1289 \u00011994\u0002.""]" +,,AlMe2H,AsH3,316–320,"[316,317,318,319,320]","["""","""","""","""",""""]","[""ATOMIC LAYER EPITAXY OF AlAs USING ETHYLDIMETHYLAMINE ALANE AS A NEW ALUMINUM SOURCE"",""AlAs layers with low carbon content grown by ALE using ethyldimethylamine alane as a new aluminum source"",""Atomic layer epitaxy of AlAs and (AlAs) _n (GaAs) _n superlattices with a new aluminum source ethyldimethylamine alane"",""Mechanism of atomic layer epitaxy of AlAs"",""Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates""]","[[""N. Kano"",""S. Hirose"",""K. Hara"",""J. Yoshino"",""H. Munekata"",""H. Kukimoto""],[""N. Kano"",""S. Hirose"",""K. Hara"",""J. Yoshino"",""H. Munekata"",""H. Kukimoto""],[""S. Hirose"",""N. Kano"",""K. Hara"",""H. Munekata"",""H. Kukimoto""],[""S. Hirose"",""M. Yamaura"",""A. Yoshida"",""H. Ibuka"",""K. Hara"",""H. Munekata""],[""S. Hirose"",""A. Yoshida"",""M. Yamaura"",""N. 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Root, in Proceedings of the Seventh International Symposium Scientific Bases for the Preparation of Heterogeneous Catalysts, Louvain-la-Neuve, Belgium, 1–4 September 1998, edited by B. Delmon, P. A. Jacobs, R. Maggi, J. A. Martens, P. Grange, and G. Poncelet \u0003Stud. Surf. Sci. Catal. 118, 817 \u00011998\u0002\u0004.""]" diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_010_table_005/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_010_table_005/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..f711e59bec1f637574d084a6ca5d5c54b47e0a19 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_010_table_005/gold.csv @@ -0,0 +1,64 @@ +Z,Material,Reactant A,Reactant B,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,AlxSiyOz,AlCl3,Si(OEt)4,94,[94],"[""""]","[""Effect of surface coverage of silica gel with phosphorus on subsequent chemisorption of titanium tetrachloride""]","[[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""]]",[1972],"[""Zh. Fiz. Kihm.""]","[""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Fiz. Khim. 46, 1292 \u00011972\u0002 \u0003Russ. J. Phys. Chem. 46, 742 \u00011972\u0002\u0004.""]" +,Al2O3/ SiO2 f,AlMe3,(tBuO)3SiOH,157,[157],"[""""]","[""Preparation and characterization of thin-films of MgO , Al _2 O _3 and MgAl _2 O _4 by atomic layer deposition""]","[[""R. Huang"",""A. H. Kitai""]]",[1993],"[""J. Electron. Mater.""]","[""R. Huang and A. H. Kitai, J. Electron. Mater. 22, 215 \u00011993\u0002.""]" +,AlxTiyOz,AlCl3,Ti(OEt)4,188,[188],"[""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""]]",[1994],"[""Appl. Surf. Sci.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002.""]" +,,AlCl3,Ti(OiPr)4,188,[188],"[""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""]]",[1994],"[""Appl. Surf. Sci.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002.""]" +,,AlMe3,Ti(OiPr)4,188,[188],"[""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""]]",[1994],"[""Appl. Surf. Sci.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002.""]" +,AlxCryOz,AlMe3,CrO2Cl2,93,[93],"[""""]","[""Preparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel""]","[[""S. I. Kol'tsov"",""A. N. Volkova"",""V. B. Aleskovskii""]]",[1969],"[""Zh. Prikl. Khim.""]","[""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 980 \u00011969\u0002\u0004.""]" +,AlxZryOz,Al(OEt)3,ZrCl4,188,[188],"[""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""]]",[1994],"[""Appl. Surf. Sci.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002.""]" +,AlxHfyOz,Al(OEt)3,HfCl4,188,[188],"[""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""]]",[1994],"[""Appl. Surf. Sci.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002.""]" +14,Silicon,,,,[],[],[],[],[],[],[] +,SiO2,SiCl4,H2O,"78, 90, 95, 96, 195, 214, and 333–337","[78,90,95,96,195,214,333,334,335,336,337]","["""","""","""","""","""","""","""","""","""","""",""""]","[""Molecular layering of boron oxide on the surface of silica"",""Interaction of trichlorosilane with silica gel"",""Ineraction of chromium-containing silica gel with phosphorus trichloride"",""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors"",""Properties of Al _2 O _3 -films deposited on silicon by atomic layer epitaxy"",""Preparation by atomic layer deposition and characterisation of catalyst supports surfaced with aluminium nitride"",""Quasi-monolayer deposition of silicon dioxide"",""Atomic-layer chemical-vapor-deposition of silicon dioxide films with an extremely low hydrogen content"",""ATOMIC-LAYER CHEMICAL-VAPOR-DEPOSITION OF SiO _2 BY CYCLIC EXPOSURES OF CH _3 OSi ( NCO ) _3 AND H _2 O _2"",""New substances for atomic-layer deposition of silicon dioxide"",""Atomic layer controlled growth of Si _3 N _4 films using sequential surface reactions""]","[[""S. I. Kol'tsov"",""T. V. Tuz"",""A. N. Volkova""],[""S. I. Kol'tsov""],[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""],[""P. Ericsson"",""S. Bengtsson"",""J. Skarp""],[""R. Puurunen""],[""W. Gasser"",""Y. Uchida"",""M. Matsumura""],[""K. Yamaguchi"",""S. Imai"",""N. Ishitobi"",""M. Takemoto"",""H. Miki"",""M. Matsumura""],[""S. Morishita"",""Y. Uchida"",""M. Matsumura""],[""S. Morishita"",""W. Gasser"",""K. Usami"",""M. Matsumura""],[""J. W. Klaus"",""A. W. Ott"",""A. C. Dillon"",""S. M. George""]]","[1979,1965,1975,2002,1997,2002,1994,1998,1995,1995,1998]","[""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Zh. Obshch. Khim."",""Zh. Prikl. Khim."",""Microelectr. Eng."",""Helsinki University of Technology"",""Thin Solid Films"",""Appl. Surf. Sci."",""Jpn. J. Appl. Phys., Part 1"",""J. Non-Cryst. Solids"",""Surf. Sci.""]","[""S. I. Kol’tsov, T. V. Tuz, and A. N. Volkova, Zh. Prikl. Khim. \u0001S.- Peterburg\u0002 52, 2196 \u00011979\u0002 \u0003J. Appl. Chem. USSR 52, 2074 \u00011979\u0002\u0004."",""S. I. Kol’tsov, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 38, 1384 \u00011965\u0002 \u0003J. Appl. Chem. USSR 38, 1352 \u00011965\u0002\u0004."",""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 45, 3 \u00011975\u0002 \u0003J. Gen. Chem. USSR 45, 1 \u00011975\u0002\u0004."",""S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 75, 986 \u00012002\u0002 \u0003Russ. J. Appl. Chem. 75, 969 \u00012002\u0002\u0004."",""P. Ericsson, S. Bengtsson, and J. Skarp, Microelectron. Eng. 36, 91 \u00011997\u0002."",""R. Puurunen, Ph.D. thesis, Helsinki University of Technology, Espoo, Finland, 2002; http://lib.hut.fl/Diss/2002/isbn9512261421/"",""W. Gasser, Y. Uchida, and M. Matsumura, Thin Solid Films 250, 213 \u00011994\u0002."",""K. Yamaguchi, S. Imai, N. Ishitobi, M. Takemoto, H. Miki, and M. Matsumura, Appl. Surf. Sci. 130–132, 202 \u00011998\u0002."",""S. Morishita, Y. Uchida, and M. Matsumura, Jpn. J. Appl. Phys., Part 1 34, 5738 \u00011995\u0002."",""S. Morishita, W. Gasser, K. Usami, and M. Matsumura, J. Non-Cryst. Solids 187, 66 \u00011995\u0002."",""J. W. Klaus, A. W. Ott, A. C. Dillon, and S. M. George, Surf. Sci. 418, L14 \u00011998\u0002.""]" +,,SiCl4,H2O + cat. g,335 and 338–341,"[335,338,339,340,341]","["""","""","""","""",""""]","[""ATOMIC-LAYER CHEMICAL-VAPOR-DEPOSITION OF SiO _2 BY CYCLIC EXPOSURES OF CH _3 OSi ( NCO ) _3 AND H _2 O _2"",""Atomic-layer deposition of silicon nitride"",""Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition"",""A comparative study on the Si precursors for the atomic layer deposition of silicon nitride thin films"",""Atomic layer controlled deposition of silicon nitride with self-limiting mechanism""]","[[""S. Morishita"",""Y. Uchida"",""M. Matsumura""],[""M. Yokoyama""],[""A. Nakajima"",""T. Yoshimoto"",""T. Kidera"",""S. Yokoyama""],[""W. J. Lee"",""J. H. Lee"",""C. O. Park"",""Y. S. Lee"",""S. J. Shin"",""S. K. Rha""],[""H. Goto"",""K. Shibahara"",""S. Yokoyama""]]","[1995,1999,2001,2004,1996]","[""Jpn. J. Appl. Phys., Part 1"",""J. Korean Phys. Soc."",""Appl. Phys. Lett."",""J. Korean Phys. Soc."",""Appl. Phys. Lett.""]","[""S. Morishita, Y. Uchida, and M. Matsumura, Jpn. J. Appl. Phys., Part 1 34, 5738 \u00011995\u0002."",""M. Yokoyama, J. Korean Phys. Soc. 35, S71 \u00011999\u0002."",""A. Nakajima, T. Yoshimoto, T. Kidera, and S. Yokoyama, Appl. Phys. Lett. 79, 665 \u00012001\u0002."",""W. J. Lee, J. H. Lee, C. O. Park,Y. S. Lee, S. J. Shin, and S. K. Rha, J. Korean Phys. Soc. 45, 1352 \u00012004\u0002."",""H. Goto, K. Shibahara, and S. Yokoyama, Appl. Phys. Lett. 68, 3257 \u00011996\u0002.""]" +,,SiCl3H,H2O,97–99,"[97,98,99]","["""","""",""""]","[""Reaction of phosphoryl chloride with hydrated silica"",""Chemical compositionnof silica containing chromium and phosphorus synthesized by the molecular-stratification method"",""""]","[[""A. N. Volkova"",""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. A. Malygin"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[]]","[1973,1980,null]","[""Zh. Obshch. Khim."",""Zh. Obshch. Khim."",""""]","[""A. N. Volkova, A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 43, 724 \u00011973\u0002 \u0003J. Gen. Chem. USSR 43, 723 \u00011973\u0002\u0004."",""A. A. Malygin, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Obshch. Khim. 50, 2633 \u00011980\u0002 \u0003J. Gen. Chem. USSR 50, 2121 \u00011980\u0002\u0004."",""S. I. Kol’tsov, Zh. Obshch. Khim. 71, 1616 \u00012001\u0002 \u0003Russ. J. Gen. Chem. 71, 1531 \u00012001\u0002\u0004.""]" +,,SiCl2H2,O3,342,[342],"[""""]","[""Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy""]","[[""S. Yokoyama"",""H. Goto"",""T. Miyamoto"",""N. Ikeda"",""J. Shibahara""]]",[1997],"[""Appl. Surf. Sci.""]","[""S. Yokoyama, H. Goto, T. Miyamoto, N. Ikeda, and J. Shibahara, Appl. Surf. Sci. 112, 75 \u00011997\u0002.""]" +,,Si(OEt)4,H2O + cat.,343,[343],"[""""]","[""Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces""]","[[""S. Yokoyama"",""N. Ikeda"",""K. Kajikawa"",""Y. Nakashima""]]",[1998],"[""Appl. Surf. Sci.""]","[""S. Yokoyama, N. Ikeda, K. Kajikawa, and Y. Nakashima, Appl. Surf. Sci. 130–132, 352 \u00011998\u0002.""]" +,,HMDS h,O2,344,[344],"[""""]","[""Atomic-layer chemical-vapor-deposition of silicon nitride""]","[[""S. Morishita"",""S. Sugahara"",""M. Matsumura""]]",[1997],"[""Appl. Surf. Sci.""]","[""S. Morishita, S. Sugahara, and M. Matsumura, Appl. Surf. Sci. 112, 198 \u00011997\u0002.""]" +,,Si(NCO)4,H2O,345,[345],"[""""]","[""Atomic level epitaxy of 3C--SiC by low pressure vapour deposition with alternating gas supply""]","[[""H. Nagasawa"",""Y. Yamaguchi""]]",[1993],"[""Thin Solid Films""]","[""H. Nagasawa and Y. Yamaguchi, Thin Solid Films 225, 230 \u00011993\u0002.""]" +,,Si(NCO)4,NEt3,346,[346],"[""""]","[""Mechanisms of SiC growth by alternate supply of SiH _2 Cl _2 and C _2 H _2""]","[[""H. Nagasawa"",""Y. Yamaguchi""]]",[1994],"[""Appl. Surf. Sci.""]","[""H. Nagasawa and Y. Yamaguchi, Appl. Surf. Sci. 82/83, 405 \u00011994\u0002.""]" +,,MeOSi(NCO)3,H2O2,347 and 348,"[347,348]","["""",""""]","[""Sub-atomic layer growth of SiC at low temperatures"",""Layer-by-layer growth of SiC at low temperatures""]","[[""E. Sadayuki"",""S. Imai"",""M. Matsumura""],[""J. Sumakeris"",""L. B. Rowland"",""R. S. Kern"",""S. Tanaka"",""R. F. Davis""]]","[1996,1993]","[""Jpn. J. Appl. Phys., Part 1"",""Thin Solid Films""]","[""E. Sadayuki, S. Imai, and M. Matsumura, Jpn. J. Appl. Phys., Part 1 34, 6166 \u00011996\u0002."",""J. Sumakeris, L. B. Rowland, R. S. Kern, S. Tanaka, and R. F. Davis, Thin Solid Films 225, 219 \u00011993\u0002.""]" +,Si3N4,SiCl4,NH3,349–352,"[349,350,351,352]","["""","""","""",""""]","[""Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure"",""SELF-LIMITING GROWTH ON THE eta - SiC (001) SURFACE"",""Atomic layer epitaxy controlled by surface superstructures in SiC"",""Microscopic mechanisms of accurate layer-by-layer growth of eta - SiC""]","[[""T. Fuyuki"",""M. Nakayama"",""T. Yoshinobu"",""H. Shiomi"",""H. Matsunami""],[""S. Hara"",""Y. Aoyagi"",""M. Kawai"",""S. Misakawa"",""E. Sakuma"",""S. Yoshida""],[""T. Fuyuki"",""T. Yoshinobu"",""H. Matsunami""],[""S. Hara"",""T. Meguro"",""Y. Aoyagi"",""M. Kawai""]]","[1989,1992,1993,1993]","[""J. Cryst. Growth"",""Surf. Sci."",""Thin Solid Films"",""Thin Solid Films""]","[""T. Fuyuki, M. Nakayama, T. Yoshinobu, H. Shiomi, and H. Matsunami, J. Cryst. Growth 95, 461 \u00011989\u0002."",""S. Hara, Y. Aoyagi, M. Kawai, S. Misakawa, E. Sakuma, and S. Yoshida, Surf. Sci. 273, 437 \u00011992\u0002."",""T. Fuyuki, T. Yoshinobu, and H. Matsunami, Thin Solid Films 125, 225 \u00011993\u0002."",""S. Hara, T. Meguro, Y. Aoyagi, and M. Kawai, Thin Solid Films 225, 240 \u00011993\u0002.""]" +,,SiCl2H2,NH3,352,[352],"[""""]","[""Microscopic mechanisms of accurate layer-by-layer growth of eta - SiC""]","[[""S. Hara"",""T. Meguro"",""Y. Aoyagi"",""M. Kawai""]]",[1993],"[""Thin Solid Films""]","[""S. Hara, T. Meguro, Y. Aoyagi, and M. Kawai, Thin Solid Films 225, 240 \u00011993\u0002.""]" +,,SiCl2H2,NH3 e,353,[353],"[""""]","[""Self-limiting atomic-layer deposition of Si on SiO _2 by alternate supply of Si _2 H _6 and SiCl _4""]","[[""S. Yokoyama"",""K. Ohba"",""A. Nakajima""]]",[2001],"[""Appl. Phys. Lett.""]","[""S. Yokoyama, K. Ohba, and A. Nakajima, Appl. Phys. Lett. 79, 617 \u00012001\u0002.""]" +,,SiCl2H2,NH3 + cat.,354 and 355,"[354,355]","["""",""""]","[""SILICON MOLECULAR LAYER EPITAXY"",""MOLECULAR LAYER EPITAXY OF SILICON""]","[[""J. Nishizawa"",""K. Aoki"",""S. Suzuki"",""K. Kikuchi""],[""J. Nishizawa"",""K. Aoki"",""S. Suzuki"",""K. Kikuchi""]]","[1990,1990]","[""J. Electrochem. Soc."",""J. Cryst. Growth""]","[""J. Nishizawa, K. Aoki, S. Suzuki, and K. Kikuchi, J. Electrochem. Soc. 137, 1898 \u00011990\u0002."",""J. Nishizawa, K. Aoki, S. Suzuki, and K. Kikuchi, J. Cryst. Growth 99, 502 \u00011990\u0002.""]" +,,Si2Cl6,N2H4,356,[356],"[""""]","[""ATOMIC LAYER EPITAXY OF SILICON BY DICHLOROSILANE STUDIED WITH CORE LEVEL SPECTROSCOPY""]","[[""J. A. Yarmoff"",""D. K. Shuh"",""T. D. Durbin"",""C. W. Lo"",""D. A. Lapiano-Smith"",""F. R. McFreely"",""F. J. Himpsel""]]",[1992],"[""J. Vac. Sci. Technol., A""]","[""J. A. Yarmoff, D. K. Shuh, T. D. Durbin, C. W. Lo, D. A. Lapiano- Smith, F. R. McFreely, and F. J. Himpsel, J. Vac. Sci. Technol. A 10, 2303 \u00011992\u0002.""]" +,SiC,SiCl2H2,C2H4,357 and 358,"[357,358]","["""",""""]","[""Atomic layer epitaxy of Si using atomic H"",""Hydrogen atom assisted ALE of silicon""]","[[""S. Imai"",""T. Iizuka"",""O. Sugiura"",""M. Matsumura""],[""S. Imai"",""M. Matsumura""]]","[1993,1994]","[""Thin Solid Films"",""Appl. Surf. Sci.""]","[""S. Imai, T. Iizuka, O. Sugiura, and M. Matsumura, Thin Solid Films 225, 168 \u00011993\u0002."",""S. Imai and M. Matsumura, Appl. Surf. Sci. 82/83, 322 \u00011994\u0002.""]" +,,SiEt2H2,– i,359,[359],"[""""]","[""Si ALE using chlorine/hydrogen exchange. F undamentals and films""]","[[""D. D. Koleske"",""S. M. Gates""]]",[1994],"[""Appl. Surf. Sci.""]","[""D. D. Koleske and S. M. Gates, Appl. Surf. Sci. 82/83, 344 \u00011994\u0002.""]" +,,Si2H6,C2H4,360,[360],"[""""]","[""Atomic layer epitaxy of Si on Ge (100): Direct recoiling studies of film morphology""]","[[""D. D. Koleske"",""S. M. Gates""]]",[1994],"[""J. Appl. Phys.""]","[""D. D. Koleske and S. M. Gates, J. Appl. Phys. 76, 1615 \u00011994\u0002.""]" +,,Si2H6,C2H2,361–364,"[361,362,363,364]","["""","""","""",""""]","[""Modeling of silicon atomic-layer-epitaxy"",""Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon"",""Atomic-Layer Epitaxy of Silicon on (100) Surface"",""Self-Limiting Adsorption of SiCl _2 H _2 and Its Application to the Layer-by-Layer Photochemical Process""]","[[""S. Sugahara"",""E. Hasunuma"",""S. Imai"",""M. Matsumura""],[""E. Hasunuma"",""S. Sugahara"",""S. Hoshino"",""S. Imai"",""K. Ikeda"",""M. Matsumura""],[""Y. Satoh"",""K. Ikeda"",""S. Sugahara"",""M. Matsumura""],[""Y. Takahashi"",""T. Urisu""]]","[1996,1998,2000,1991]","[""Appl. Surf. Sci."",""J. Vac. Sci. Technol., A"",""Jpn. J. Appl. Phys., Part 1"",""Jpn. J. Appl. Phys., Part 2""]","[""S. Sugahara, E. Hasunuma, S. Imai, and M. Matsumura, Appl. Surf. Sci. 107, 161 \u00011996\u0002."",""E. Hasunuma, S. Sugahara, S. Hoshino, S. Imai, K. Ikeda, and M. Matsumura, J. Vac. Sci. Technol. A 16, 679 \u00011998\u0002."",""Y. Satoh, K. Ikeda, S. Sugahara, and M. Matsumura, Jpn. J. Appl. Phys., Part 1 39, 5732 \u00012000\u0002."",""Y. Takahashi and T. Urisu, Jpn. J. Appl. Phys., Part 2 30, L209 \u00011991\u0002.""]" +,Si,SiCl4,Si2H6,365,[365],"[""""]","[""Characterization of self-limiting SiH _2 Cl _2 chemisorption and photon-stimulated desorption as elementary steps for Si atomic-layer epitaxy""]","[[""H. Akazawa""]]",[1996],"[""Phys. Rev. B""]","[""H. Akazawa, Phys. Rev. B 54, 10917 \u00011996\u0002.""]" +,,SiCl2H2,H2,366 and 367,"[366,367]","["""",""""]","[""Bistable Si growth conditions on Ge (100) in synchrotron-radiation-excited atomic layer epitaxy from SiH _2 C _l2"",""DIETHYLSILANE ON SILICON SURFACES - ADSORPTION AND DECOMPOSITION KINETICS""]","[[""H. Akazawa""],[""P. A. Coon"",""M. L. Wise"",""A. C. Dillon"",""M. B. Robinson"",""S. M. George""]]","[1997,1992]","[""J. Appl. Phys."",""J. Vac. Sci. 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B 10, 221 \u00011992\u0002.""]" +,,SiCl2H2,H c,368–375,"[368,369,370,371,372,373,374,375]","["""","""","""","""","""","""","""",""""]","[""SILANE GAS-SOURCE ATOMIC LAYER EPITAXY"",""Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH _4 gas"",""Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH _4 and SiH _4 gases"",""Growth of Si on Si (100) via H/Cl exchange and the effect of interfacial boron"",""EPITAXIAL Si FILMS ON Ge (100) GROWN VIA H/Cl EXCHANGE"",""Atomic layer epitaxy of Si on Ge (100) using Si _2 Cl _6 and atomic hydrogen"",""THERMAL AND PHOTOSTIMULATED REACTIONS ON Si _2 H _6 -ADSORBED Si (100)2 imes 1 SURFACES - MECHANISMS OF Si FILM GROWTH BY ATOMIC-LAYER EPITAXY"",""MECHANISMS AND KINETICS OF Si ATOMIC-LAYER EPITAXY ON Si (001)2 imes 1 FROM Si _2 H _6""]","[[""F. Hirose"",""M. Suemitsu"",""N. Miyamoto""],[""J. Murota"",""M. Sakuraba"",""S. Ono""],[""M. Sakuraba"",""J. Murota"",""T. Watanabe"",""Y. 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Catal. 34, 406 \u00011993\u0002\u0004."",""S. I. Kol’tsov, A. N. Volkova, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1028 \u00011969\u0002 \u0003J. Appl. Chem. USSR 42, 980 \u00011969\u0002\u0004."",""S. I. Kol’tsov and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 42, 1210 \u00011968\u0002 \u0003Russ. J. Phys. Chem. 42, 630 \u00011968\u0002\u0004."",""V. N. Pak, Yu. P. Kostikov, S. I. Kol’tsov, and V. B. Aleskovskii, Kinet. Katal. 15, 1358 \u00011974\u0002 \u0003Kinet. Catal. 15, 1205 \u00011974\u0002\u0004."",""V. N. Pak, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 50, 1266 \u00011976\u0002 \u0003Russ. J. Phys. Chem. 50, 758 \u00011976\u0002\u0004.""]" +,,POCl3,H2O,"96, 104, and 105","[96,104,105]","["""","""",""""]","[""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors"",""Possibility of the use of a gravimetric method for studying the process of molecular layering in disperse silica samples"",""Synthesis of oxide layers on silicon polydioxide by molecular deposition with methoxyl functional groups""]","[[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""],[""V. A. Tolmachev""],[""V. M. Smirnov"",""A. A. Malkov"",""R. R. Rachovskii""]]","[2002,1982,1992]","[""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Zh. Prikl. Khim.""]","[""S. A. Trifonov, V. A. Lapikov, and A. A. Malygin, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 75, 986 \u00012002\u0002 \u0003Russ. J. Appl. Chem. 75, 969 \u00012002\u0002\u0004."",""V. A. Tolmachev, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 55, 1410 \u00011982\u0002 \u0003J. Appl. Chem. USSR 55, 1298 \u00011982\u0002\u0004."",""V. M. Smirnov, A. A. Malkov, and R. R. Rachovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 65, 2666 \u00011992\u0002 \u0003J. Appl. Chem. USSR 65, 2213 \u00011992\u0002\u0004.""]" +,PxByOz,POCl3,B(OMe)3,88 and 89,"[88,89]","["""",""""]","[""Investigation of ultrathin SiO _2 films on the surface of single-crystal germanium"",""Thermal oxidation of silicon carbide with surface modification by the molecular layering method""]","[[""M. A. Eremeeva"",""A. P. Nechiporenko"",""G. N. Kuznetsova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""L. V. Miroshnichenko"",""A. A. Malygin"",""S. I. Kol'tsov""]]","[1974,1985]","[""Zh. Prikl. Khim."",""Ogneupory""]","[""M. A. Eremeeva, A. P. Nechiporenko, G. N. Kuznetsova, S. I. Kol’tsov, and V. B. Aleskovskii, Zh. Prikl. Khim. \u0001S.-Peterburg\u0002 47, 2332 \u00011974\u0002 \u0003J. Appl. Chem. USSR 47, 2390 \u00011974\u0002\u0004."",""L. V. Miroshnichenko, A. A. Malygin, and S. I. Kol’tsov, Ogneupory 26, 22 \u00011985\u0002 \u0003Refractories 26, 82 \u00011985\u0002\u0004.""]" +20,Calcium,,,,[],[],[],[],[],[],[] +,CaO (CaCO3),Ca(thd)2,H2O,408,[408],"[""""]","[""Analytical and chemical techniques in the study of surface species in atomic layer epitaxy""]","[[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""]]",[1993],"[""Thin Solid Films""]","[""S. Haukka, E.-L. Lakomaa, and T. Suntola, Thin Solid Films 225, 280 \u00011993\u0002.""]" +,,Ca(thd)2,O3,409,[409],"[""""]","[""Dispersion and distribution of titanium species bound to silica from TiCl _4""]","[[""S. Haukka"",""E.-L. Lakomaa"",""O. Jylh a"",""J. Vilhunen"",""S. Hornytzkyj""]]",[1993],"[""Langmuir""]","[""S. Haukka, E.-L. Lakomaa, O. Jylhä, J. Vilhunen, and S. Hornytzkyj, Langmuir 9, 3497 \u00011993\u0002.""]" +,CaS,Ca(thd)2,H2S,408 and 410–414,"[408,410,411,412,413,414]","["""","""","""","""","""",""""]","[""Analytical and chemical techniques in the study of surface species in atomic layer epitaxy"",""Growth of titanium dioxide thin films by atomic layer epitaxy"",""Atomic force microscopy study of titanium dioxide thin films grown by atomic layer epitaxy"",""Surface coverage of ALE precursors on oxides"",""Morphology and structure of TiO _2 thin films grown by atomic layer deposition"",""Control of thin film structure by reactant pressure in atomic layer deposition of TiO _2""]","[[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""],[""M. Ritala"",""M. Leskel a""],[""M. Ritala"",""M. Leskel a"",""L.-S. Johansson"",""L. Niinist o""],[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""],[""J. Aarik"",""A. Aidla"",""T. Uustare"",""V. Sammelselg""],[""J. Aarik"",""A. Aidla"",""V. Sammelselg"",""H. Siimon"",""T. Uustare""]]","[1993,1993,1993,1994,1995,1996]","[""Thin Solid Films"",""Thin Solid Films"",""Thin Solid Films"",""Appl. Surf. Sci."",""J. Cryst. Growth"",""J. Cryst. Growth""]","[""S. Haukka, E.-L. Lakomaa, and T. Suntola, Thin Solid Films 225, 280 \u00011993\u0002."",""M. Ritala and M. Leskelä, Thin Solid Films 225, 288 \u00011993\u0002."",""M. Ritala, M. Leskelä, L.-S. Johansson, and L. Niinistö, Thin Solid Films 228, 32 \u00011993\u0002."",""S. Haukka, E.-L. Lakomaa, and T. Suntola, Appl. Surf. Sci. 82/83, 548 \u00011994\u0002."",""J. Aarik, A. Aidla, T. Uustare, and V. Sammelselg, J. Cryst. Growth 148, 268 \u00011995\u0002."",""J. Aarik, A. Aidla, V. Sammelselg, H. Siimon, and T. Uustare, J. Cryst. Growth 169, 496 \u00011996\u0002.""]" +,CaF2,Ca(thd)2,HF,415,[415],"[""""]","[""Atomic-layer growth of TiO _2 -II thin films""]","[[""J. Aarik"",""A. Aidla"",""T. Uustare""]]",[1996],"[""Philos. Mag. Lett.""]","[""J. Aarik, A. Aidla, and T. Uustare, Philos. Mag. Lett. 73, 115 \u00011996\u0002.""]" +21,Scandium,,,,[],[],[],[],[],[],[] +,Sc2O3,ScCp3,H2O,416,[416],"[""""]","[""Monitoring of atomic layer deposition by incremental dielectric reflection""]","[[""A. Rosental"",""P. Adamson"",""A. Gerst"",""A. Niilisk""]]",[1996],"[""Appl. Surf. Sci.""]","[""A. Rosental, P. Adamson, A. Gerst, and A. Niilisk, Appl. Surf. Sci. 107, 178 \u00011996\u0002.""]" +,,Sc(thd)3,O3,416,[416],"[""""]","[""Monitoring of atomic layer deposition by incremental dielectric reflection""]","[[""A. Rosental"",""P. Adamson"",""A. Gerst"",""A. Niilisk""]]",[1996],"[""Appl. Surf. Sci.""]","[""A. Rosental, P. Adamson, A. Gerst, and A. Niilisk, Appl. Surf. Sci. 107, 178 \u00011996\u0002.""]" +,,Sc(thd)3,O3 + H2O2,416,[416],"[""""]","[""Monitoring of atomic layer deposition by incremental dielectric reflection""]","[[""A. Rosental"",""P. Adamson"",""A. Gerst"",""A. Niilisk""]]",[1996],"[""Appl. Surf. Sci.""]","[""A. Rosental, P. Adamson, A. Gerst, and A. Niilisk, Appl. Surf. Sci. 107, 178 \u00011996\u0002.""]" diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_011_table_006/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_011_table_006/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..b4271c352a12c55b785d1810c6efa60addd53992 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_011_table_006/gold.csv @@ -0,0 +1,58 @@ +Z,Material,Reactant A,Reactant B,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +22,Titanium,,,,[],[],[],[],[],[],[] +,TiO2,TiCl4,H2O,"1, 79–81, 96, 100, 101, 106–114, 116–133, 207, 212, 237, 260, 336, and 417–453","[1,79,80,81,96,100,101,106,107,108,109,110,111,112,113,114,116,117,118,119,120,121,122,123,124,125,126,127,128,129,130,131,132,133,207,212,237,260,336,417,418,419,420,421,422,423,424,425,426,427,428,429,430,431,432,433,434,435,436,437,438,439,440,441,442,443,444,445,446,447,448,449,450,451,452,453]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""Interaction of titanium and germanium tetrachlorides with hydroxylated silicon dioxide"",""Structure of a zinc sulfide film prepared by molecular stratification on the surface of disperse silica"","""",""Synthesis and study of boron phosphate and titanium silicate compounds on silica surface"",""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors"","""",""Effect of degree of dehydration of silica gel on mechanism of hydrolysis of adsorbed titanium tetrachloride"",""Properties of titanium-containing silicas and the specific features of the state of water on their surfaces"",""Molecular layering of titanium-oxide groups on the surface of copper-containing silica gel"",""INVESTIGATION OF DEGREE OF MONOCRYSTALLINE SILICON SURFACE HYDRATION AT DIFFERENT TEMPERATURES"","""",""Investigation of the structure of titanium oxide layers synthesized by molecular stratification on the surface of single-crystal backings"",""Electrical properties of the surface of germanium in contact with transition-metal oxides formed by the molecular deposition method"",""Preparation of titanium oxide coatings on sodium borosilicate glass surfaces by molecular layering and study of the stability of the products obtained in aqueous medium"",""Investigation of the synthesis process and properties of titanium-oxide films, formed by molecular deposition method"",""Molecular layering of titanium oxide layers and their effect on the chemical stability of optical glass"",""REACTION OF TiCl _4 AND H _2 O VAPOR PRODUCTS WITH A MICA SURFACE"",""Synthesis of hydroxyl--titanium--carbon solid compounds on diamond by the molecular-stratification method"",""Interaction of titanium tetrachloride with diamond preparations"",""Kinetic equation for the reaction of titanium tetrachloride with hydride functional groups on diamond"",""Formation of titanium dioxide films in the course of chemical assembly"",""Change in potential of anodized aluminum upon its modification with titanium dioxide"",""INFLUENCE OF THE DEGREE OF HYDROXYLATION OF THE SURFACE - Al _2 O _3 ON THE CHARACTER OF CHEMISORPTION OF TiCl _4"",""EFFECT OF DEHYDRATION AND REHYDRATION OF THE ALUMINUM-OXIDE SURFACE ON THE CHEMISORPTION OF TiCl _4"",""Phase formation and change in surface acidity in synthesis of titanium oxide layer on - Al _2 O _3 by the molecular lamination method"",""Effect of the history of a disperse system on thermal compaction of materials containing - AlO _ 1.5 and TiO _2"",""Synthesis and characterization of nanosized titanium oxide films on the (0001) - Al _2 O _3 surface"",""Interaction of Titanium Tetrachloride with Products of Thermal Decomposition of Basic Magnesium Carbonate"",""Pigmentation of mica with titanium dioxide by molecular deposition of titanium tetrabutoxide"",""Reaction of vanadyl trichloride with silica"",""STUDIES ON CATALYTICALLY ACTIVE SURFACE COMPOUNDS 1. P REPARATION AND INVESTIGATION OF VANADIUM OXIDE PHASES ON SILICA"",""STUDIES ON CATALYTICALLY ACTIVE SURFACE COMPOUNDS 2. E XISTENCE OF DIFFERENT VANADIUM( V ) OXIDE SURFACE PHASES ON SiO _2 AND THEIR CATALYTIC PROPERTIES"",""Interaction of chromyl chloride with silica gel"",""Reaction of chromium-containing silica gel with hydrogen chloride"",""Atomic layer deposition of Al _2 O _3 and SiO _2 on BN particles using sequential surface reactions"",""Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues"",""Effect of Hf Sources, Oxidizing Agents, and NH _3 / Ar Plasma on the Properties of HfAlO _x Films Prepared by Atomic Layer Deposition"",""In situ ellipsometric diagnostics for controlled growth of metal oxides with surface chemical reactions"",""New substances for atomic-layer deposition of silicon dioxide"",""The electrical field effect on the growth of titanium oxide layers by ML -- ALE"",""Effect of growth conditions on formation of TiO _2 - II thin films in atomic layer deposition process"",""Effect of crystal structure on optical properties of TiO _2 films grown by atomic layer deposition"",""Thickness profiles of thin films caused by secondary reactions in flow-type atomic layer deposition reactors"",""Effects of HCl readsorption on film growth in atomic layer CVD of TiO _2"",""Processing of catalysts by atomic layer epitaxy: modification of supports"",""Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection"",""TiO _2 films by atomic layer deposition: a case of uneven growth at low temperature"",""Spectroscopic study of nanocrystalline TiO _2 thin films grown by atomic layer deposition"",""Surface of TiO _2 during atomic layer deposition as determined by incremental dielectric reflection"",""Composition and thickness determination of thin oxide films: comparison of different programs and methods"",""Deposition of a titania coating on silica by means of the chemical surface coating"",""Grazing-incidence SAXS/WAXD on nanosized TiO _2 films obtained by ALE"",""Anomalous effect of temperature on atomic layer deposition of titanium dioxide"","""",""Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO _2 and SnO _2"",""Atomic layer growth of epitaxial TiO _2 thin films from TiCl _4 and H _2 O on - Al _2 O _3 substrates"",""Formation of a thin TiO _2 layer on the surfaces of silica and kaolin pigments through atomic layer deposition"",""Influence of Si (100) surface pretreatment on the morphology of TiO _2 films grown by atomic layer deposition"",""Transmission electron microscopy studies of atomic layer deposition of TiO _2 films grown on silicon"",""TiO _2 atomic layer deposition on ZrO _2 particles using alternate exposures of TiCl _4 and H _2 O"",""Large-scale fabrication of ordered nanobowl arrays"",""Template-assisted fabrication of dense, aligned arrays of titania nanotubes with well-controlled dimensions on substrates"",""Role of Water in the Atomic Layer Deposition of TiO _2 on SiO _2"",""Fabrication of titanium oxide thin films by controlled growth with sequential surface chemical reactions"",""Atomic layer deposition of TiO _2 thin films from TiI _4 and H _2 O"",""Atomic Layer Deposition of Titanium Oxide from TiI _4 and H _2 O _2"",""Real-Time Monitoring in Atomic Layer Deposition of TiO _2 from TiI _4 and H _2 O--H _2 O _2"",""Atomic Layer Chemical Vapor Deposition of TiO _2 Low Temperature Epitaxy of Rutile and Anatase"",""Atomic layer deposition of thin films using O _2 as oxygen source"",""Epitaxial growth of TiO _2 films in a hydroxyl-free atomic layer deposition process"",""Atomic Layer Deposition of Photocatalytic TiO _2 Thin Films from Titanium Tetramethoxide and Water"",""Atomic layer epitaxy growth of titanium dioxide thin films from titanium ethoxide"",""Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water"",""Influence of structure development on atomic layer deposition of TiO _2 thin films"",""In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal ( Ti, Ta, and Nb ) Ethoxides and Water"",""High tunability (Ba,Sr)TiO _3 thin films grown on atomic layer deposited TiO _2 and Ta _2 O _5 buffer layers""]","[[""A. M Shevjakov"",""G. N. Kuznetsova"",""V. B. Aleskovskii""],[""N. A. Stepanova"",""V. D. Kupriyanov"",""A. A. Malygin""],[],[""V. V. Brei"",""V. A. Kasperskii"",""N. E. Gulyanitskaya""],[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""],[],[""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""V. N. Pak"",""I. . Tikhomirova"",""T. M. Burkat"",""B. I. Lobov""],[""S. I. Kol'tsov"",""G. N. Kuznetsova""],[""S. I. Kol'tsov"",""V. E. Drozd"",""V. B. Aleskovskii""],[],[""S. I. Kol'tsov"",""V. E. Drozd"",""T. A. Redova"",""V. B. Aleskovskii""],[""V. B. Aleskovskii"",""V. E. Drozd"",""V. F. Kiselev"",""S. N. Kozlov"",""S. I. Kol'tsov"",""A. S. Petrov"",""G. S. Plotnikov""],[""M. N. Tsvetkova"",""I. M. Yur'evskaya"",""A. A. Malygin"",""S. I. Kol'tsov"","". I. Skorik""],[""V. A. Tolmachev"",""M. A. Okatov""],[""V. A. Tolmachev"",""M. A. Okatov"",""V. V. Pal'chevskii""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""S. K. Gordeev"",""E. P. Smirnov"",""S. I. Kol'tsov""],[""S. K. Gordeev"",""E. P. Smirnov""],[""A. B. Zhidkov"",""E. P. Smirnov""],[""A. L. Egorov"","". K. Ezhovskii"",""S. I. Kol'tsov"",""G. V. Anikeev""],[""A. A. Seitmagzimov"",""V. N. Pak"",""S. I. Kol'tsov""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""L. I. Petrova"",""A. A. Malkov"",""A. A. Malygin""],[""N. V. Dolgushev"",""A. A. Malkov"",""A. A. Malygin"",""S. A. Suvorov"",""A. V. Shchukarev"",""A. V. Beljaev"",""V. A. Bykov""],[""N. V. Dolgushev"",""A. A. Malkov"",""A. A. Malygin"",""S. A. Suvorov"",""A. V. Shchukarev"",""A. V. Beljaev"",""V. A. Bykov""],[""S. A. Morozov"",""A. A. Malkov"",""A. A. Malygin""],[""L. I. Chernaya"",""P. E. Matkovskii"",""V. M. Rudakov"","". M. Shul'ga"",""I. V. Markov"",""V. I. Tomilo"",""Z. G. Busheva""],[""A. A. Malygin"",""A. N. Volkova"",""S. I. Kol'tsov"",""A. A. Aleskovskii""],[""W. Hanke"",""R. Bienert"",""H.-G. Jerschkewitz""],[""W. Hanke"",""K. Heise"",""H.-G. Jerschkewitz"",""G. Lischke"",""G. Ohlmann"",""B. Parlitz""],[""A. N. Volkova"",""A. A. Malygin"",""V. M. Smirnov"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""A. A. Malygin"",""A. N. Volkova"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""E. P. Gusev"",""E. Cartier"",""D. A. Buchanan"",""M. Gribelyuk"",""M. Copel"",""H. Okorn-Schmidt"",""C. D'Emic""],[""T. Kawahara"",""K. Torii"",""R. Mitsuhashi"",""A. Muto"",""A. Horiuchi"",""H. Ito"",""H. Kitajima""],[""H. Kumagai"",""K. Toyoda""],[""S. Morishita"",""W. Gasser"",""K. Usami"",""M. Matsumura""],[""V. E. Drozd"",""N. N. Kopilov"",""V. B. Aleskovski""],[""J. Aarik"",""A. Aidla"",""V. Sammelselg"",""T. Uustare""],[""J. Aarik"",""A. Aidla"",""A.-A. Kiisler"",""T. Uustare"",""V. Sammelselg""],[""H. Siimon"",""J. Aarik""],[""H. Siimon"",""J. Aarik"",""T. Uustare""],[""M. Lindblad"",""S. Haukka"",""A. Kyt okivi"",""E.-L. Lakomaa"",""A. Rautiainen"",""T. Suntola""],[""A. Rosental"",""P. Adamson"",""A. Gerst"",""H. Koppel"",""A. Tarre""],[""V. Sammelselg"",""A. Rosental"",""A. Tarre"",""L. Niinist o"",""K. Heiskanen"",""K. Ilmonen"",""L.-S. Johansson"",""T. Uustare""],[""A. Suisalu"",""J. Aarik"",""H. M andar"",""I. Sildos""],[""A. Rosental"",""A. Tarre"",""P. Adamson"",""A. Gerst"",""A. Kasikov"",""A. Niilisk""],[""V. Sammelselg"",""J. Aarik"",""A. Aidla"",""A. Kasikov"",""E. Heikinheimo"",""M. Peussa"",""L. Niinist o""],[""K. Schrijnemakers"",""N. R. E. N. Impens"",""E. F. Vansant""],[""A. Turkovi c""],[""J. Aarik"",""A. Aidla"",""H. M a ndar"",""V. Sammelselg""],[],[""A. Tarre"",""A. Rosental"",""V. Sammelselg"",""T. Uustare""],[""J. Aarik"",""A. Aidla"",""H. M andar"",""T. Uustare"",""M. Schuisky"",""A. H rsta""],[""B. J. Ninness"",""D. W. Bousfield"",""C. P. Tripp""],[""K. S. Finnie"",""G. Triani"",""K. T. Short"",""D. R. G. Mitchell"",""D. J. Attard"",""J. R. Bartlett"",""C. J. Barb e""],[""D. R. G. Mitchell"",""D. J. Attard"",""G. Triani""],[""J. D. Ferguson"",""A. R. Yoder"",""A. W. Weimer"",""S. M. George""],[""X. D. Wang"",""E. Graugnard"",""J. S. King"",""Z. L. Wang"",""C. J. Summers""],[""M. S. Sander"",""M. J. C ot e"",""W. Gu"",""B. M. Kile"",""C. P. Tripp""],[""W. Gu"",""C. P. Tripp""],[""H. Kumagai"",""M. Matsumoto"",""K. Toyoda"",""M. Obara"",""M. Suzuki""],[""J. Aarik"",""A. Aidla"",""T. Uustare"",""K. Kukli"",""V. Sammelselg"",""M. Ritala"",""M. Leskel a""],[""K. Kukli"",""M. Ritala"",""M. Schusky"",""M. Leskel a"",""T. Sajavaara"",""J. Keinonen"",""T. Uustare"",""A. H rsta""],[""K. Kukli"",""A. Aidla"",""J. Aarik"",""M. Schuisky"",""A. H sta"",""M. Ritala"",""M. Leskel a""],[""M. Schuisky"",""A. H rsta"",""A. Aidla"",""K. Kukli"",""A.-A. Kiisler"",""Jaan Aarik""],[""M. Schuisky"",""J. Aarik"",""K. Kukli"",""A. Aidla"",""A. H rsta""],[""M. Schuisky"",""K. Kukli"",""J. Aarik"",""J. Lu"",""A. H rsta""],[""V. Pore"",""A. Rahtu"",""M. Leskel a"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen""],[""M. Ritala"",""M. Leskel a"",""E. 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Sci. Eng., C 24, 289 \u00012004\u0002.""]" +,,TiCl4,tBuNH2,496,[496],"[""""]","[""Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor""]","[[""J. Y. Kim"",""S. Seo"",""D. Y. Kim"",""H. Jeon"",""Y. Kim""]]",[2004],"[""J. Vac. Sci. Technol., A""]","[""J. Y. Kim, S. Seo, D. Y. Kim, H. Jeon, and Y. Kim, J. Vac. Sci. Technol. A 22, 8 \u00012004\u0002.""]" +,,TiCl4,AyNH2,496,[496],"[""""]","[""Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor""]","[[""J. Y. Kim"",""S. Seo"",""D. Y. Kim"",""H. Jeon"",""Y. Kim""]]",[2004],"[""J. Vac. Sci. Technol., A""]","[""J. Y. Kim, S. Seo, D. Y. Kim, H. Jeon, and Y. Kim, J. Vac. Sci. Technol. A 22, 8 \u00012004\u0002.""]" +,,TiI4,NH3,483 and 497,"[483,497]","["""",""""]","[""Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources"",""Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis(ethylmethylamino)-Titanium and Ammonia""]","[[""M. Juppo"",""P. Al en"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""],[""J.-S. Min"",""Y.-W. Son"",""W.-G. Kang"",""S.-S. Chun"",""S.-W. Kang""]]","[2002,1998]","[""Electrochem. Solid-State Lett."",""Jpn. J. Appl. Phys., Part 1""]","[""M. Juppo, P. Alén, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskelä, Electrochem. Solid-State Lett. 5, C4 \u00012002\u0002."",""J.-S. Min, Y.-W. Son, W.-G. Kang, S.-S. Chun, and S.-W. Kang, Jpn. J. Appl. Phys., Part 1 37, 4999 \u00011998\u0002.""]" +,,TiI4,tBuNH2,496,[496],"[""""]","[""Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor""]","[[""J. Y. Kim"",""S. Seo"",""D. Y. Kim"",""H. Jeon"",""Y. Kim""]]",[2004],"[""J. Vac. Sci. Technol., A""]","[""J. Y. Kim, S. Seo, D. Y. Kim, H. Jeon, and Y. Kim, J. Vac. Sci. Technol. A 22, 8 \u00012004\u0002.""]" +,,TiI4,AyNH2,496,[496],"[""""]","[""Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor""]","[[""J. Y. Kim"",""S. Seo"",""D. Y. Kim"",""H. Jeon"",""Y. Kim""]]",[2004],"[""J. Vac. Sci. Technol., A""]","[""J. Y. Kim, S. Seo, D. Y. Kim, H. Jeon, and Y. Kim, J. Vac. Sci. Technol. 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Sci. 75, 220 \u00011994\u0002.""]" +,,Ti(NMe2)4,N2 e,509–512,"[509,510,511,512]","["""","""","""",""""]","[""Chemisorption of chromium acetylacetonate on porous high surface area silica"",""Surface characteristics and activity of chromia/alumina catalysts prepared by atomic layer epitaxy"",""Dehydrogenation of i -butane on CrO _x / Al _2 O _3 catalysts prepared by ALE and impregnation techniques"",""Kinetic analysis of temperature-programmed reduction: behavior of a CrO _x / Al _2 O _3 catalyst""]","[[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""],[""A. Kyt o kivi"",""J.-P. Jacobs"",""A. Hakuli"",""J. Meril a inen"",""H. H. Brongersma""],[""A. Hakuli"",""A. Kyt o kivi"",""A. O. I. Krause""],[""J. M. Kanervo"",""A. O. I. Krause""]]","[1994,1996,2000,2001]","[""Appl. Surf. Sci."",""J. Catal."",""Appl. Catal., A"",""J. Phys. Chem. B""]","[""S. Haukka, E.-L. Lakomaa, and T. Suntola, Appl. Surf. Sci. 75, 220 \u00011994\u0002."",""A. Kytökivi, J.-P. Jacobs, A. Hakuli, J. Meriläinen, and H. 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Catal., A 190, 219 \u00012000\u0002."",""J. M. Kanervo and A. O. I. Krause, J. Phys. Chem. B 105, 9778 \u00012001\u0002.""]" +,,Ti(NEt2)4,NH3,506,[506],"[""""]","[""Atomic layer deposition and surface characterization of highly dispersed titania/silica-supported vanadia catalysts""]","[[""J. Ker anen"",""C. Guimon"",""E. Liskola"",""A. Auroux"",""L. Niinist o""]]",[2003],"[""Catal. Today""]","[""J. Keränen, C. Guimon, E. Liskola, A. Auroux, and L. Niinistö, Catal. Today 78, 149 \u00012003\u0002.""]" +,,Ti(NEtMe)4,NH3,513 and 514,"[513,514]","["""",""""]","[""Chromium( III ) supported on aluminium-nitride-surfaced alumina: characteristics and dehydrogenation activity"",""Thin film deposition of lanthanum manganite perovskite by the ALE process""]","[[""R. L. Puurunen"",""S. M. K. Airaksinen"",""A. O. I. Krause""],[""O. Nilsen"",""M. Peussa"",""H. Fjellv g"",""L. Niinist o"",""A. Kjekshus""]]","[2003,1999]","[""J. Catal."",""J. Mater. Chem.""]","[""R. L. Puurunen, S. M. K. 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Sci. 82/83, 460 \u00011994\u0002.""]" +23,Vanadium,,,,[],[],[],[],[],[],[] +,VOx,VOCl3,H2O,"96, 103, 117, 121, and 135–137","[96,103,117,121,135,136,137]","["""","""","""","""","""","""",""""]","[""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors"",""Structural effects of silica surfaces on molecularly superposed titanium-oxygen layers"",""Synthesis of hydroxyl--titanium--carbon solid compounds on diamond by the molecular-stratification method"",""Change in potential of anodized aluminum upon its modification with titanium dioxide"",""Surface activity of metals ( Ni, Ti ) in molecular stratification reactions"",""Structural characteristics of chromium-containing silica gel prepared by molecular coating"",""IR spectroscopic study of the reaction of iron( III ) chloride vapor with partially dehydroxylated aerosil""]","[[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""],[""V. N. Pak""],[""S. K. Gordeev"",""E. P. Smirnov"",""S. I. 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Takita, T. Okuno, and Y. Masumoto, J. Cryst. Growth 184/185, 274 \u00011998\u0002.""]" +,,VO(acac)2,O2,524 and 525,"[524,525]","["""",""""]","[""Comparison between atomic layer epitaxy grown and molecular beam epitaxy grown CdTe / MnTe superlattices: a structural and optical study"",""Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study""]","[[""F. Kany"",""J. M. Hartmann"",""H. Ulmer-Tuffigo"",""H. Mariette""],[""J. M. Hartmann"",""F. Kany"",""M. Charleux"",""Y. Samson"",""J. L. Rouvi ere"",""H. Mariette""]]","[1998,1998]","[""Superlattices Microstruct."",""J. Appl. Phys.""]","[""F. Kany, J. M. Hartmann, H. Ulmer-Tuffigo, and H. Mariette, Superlattices Microstruct. 23, 1359 \u00011998\u0002."",""J. M. Hartmann, F. Kany, M. Charleux, Y. Samson, J. L. Rouvière, and H. Mariette, J. Appl. Phys. 84, 4300 \u00011998\u0002.""]" +24,Chromium,,,,[],[],[],[],[],[],[] +,CrOx,CrO2Cl2,H2O,"84, 96, 103, 105, 117, 121, and 138–142","[84,96,103,105,117,121,138,139,140,141,142]","["""","""","""","""","""","""","""","""","""","""",""""]","[""Fabrication and dielectric properties of multilayer Ta _2 O _5 /Al _2 O _3 nanolaminates"",""Reactivity of Phenol-Formaldehyde Microspheres toward PCl _3 , VOCl _3 , and CrO _2 Cl _2 Vapors"",""Structural effects of silica surfaces on molecularly superposed titanium-oxygen layers"",""Synthesis of oxide layers on silicon polydioxide by molecular deposition with methoxyl functional groups"",""Synthesis of hydroxyl--titanium--carbon solid compounds on diamond by the molecular-stratification method"",""Change in potential of anodized aluminum upon its modification with titanium dioxide"",""Study of the reaction between zinc chloride and silica gel"",""Molecular layering of 2 D films and superlattices based on II -- VI compounds"",""Interaction of germanium tetrachloride with silica gel"",""Atomic-layer epitaxy of cadmium chalcogenides on gallium arsenide"",""Growth of CdSe - and CdTe -Based Nanostructures on Silicon""]","[["". K. Ezhovskii"",""A. I. Klusevich""],[""S. A. Trifonov"",""V. A. Lapikov"",""A. A. Malygin""],[""V. N. Pak""],[""V. M. Smirnov"",""A. A. Malkov"",""R. R. Rachovskii""],[""S. K. Gordeev"",""E. P. Smirnov"",""S. I. Kol'tsov""],[""A. A. Seitmagzimov"",""V. N. Pak"",""S. I. Kol'tsov""],[""N. A. Stepanova"",""V. M. Smirnov"",""S. I. Kol'tsov"",""V. B. Aleskovskii""],[""R. A. Bisengaliev"",""B. V. Novikov"",""V. B. Aleskovskii"",""V. E. Drozd"",""D. A. Ageev"",""V. I. Gubaidullin"",""A. P. Savchenko""],[""S. I. Kol'tsov"",""V. B. Aleskovskii"",""G. N. Kuznetsova"",""N. G. Roslyakova""],["". K. Ezhovskii"",""A. I. Klyuikov""],["". K. Ezhovskii"",""D. P. Mikhaevich""]]","[2003,2002,1976,1992,1982,1985,1977,1998,1967,2000,2004]","[""Neorg. Mater."",""Zh. Prikl. Khim."",""Zh. Fiz. Khim."",""Zh. Prikl. Khim."",""Zh. Obshch. Khim."",""Zh. Prikl. Khim."",""Zh. Prikl. Khim."",""Fiz. Tverd. Tela"",""Neorg. Mater."",""Zr. Prikl. Khim."",""Neorg. Mater.""]","[""Yu. K. Ezhovskii and A. I. 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Sci. 107, 255 \u00011996\u0002.""]" +27,Cobalt,,,,[],[],[],[],[],[],[] diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_012_table_007/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_012_table_007/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..705eca35960b9b61f8222a5aa1746d85e7242a3f --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_012_table_007/gold.csv @@ -0,0 +1,59 @@ +Z,Material,Reactant A,Reactant B,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,CoOx,Co(acac)2,O2,547 and 548,"[547,548]","["""",""""]","[""Alloying in Cu/Pd nanoparticle catalysts"",""Characteristics of copper films produced via atomic layer deposition""]","[[""A. M. Molenbroek"",""S. Haukka"",""B. S. Clausen""],[""J. S. Huo"",""R. Solanki"",""J. McAndrew""]]","[1998,2002]","[""J. Phys. Chem. B"",""J. Mater. 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Brongersma, Appl. Surf. Sci. 107, 255 \u00011996\u0002.""]" +,Co,Co(iPrAMD)2,H2,546,[546],"[""""]","[""A mini- ALE attachment to UHV surface analysis equipment""]","[[""R. G. van Welzenis"",""R. A. M. Bink"",""H. H. Brongersma""]]",[1996],"[""Appl. Surf. Sci.""]","[""R. G. van Welzenis, R. A. M. Bink, and H. H. Brongersma, Appl. Surf. Sci. 107, 255 \u00011996\u0002.""]" +28,Nickel,,,,[],[],[],[],[],[],[] +,NiO,NiCp2,H2O,556,[556],"[""""]","[""Deposition of Copper Thin Films by anAlternate Supply of CuCl and Zn""]","[[""M. Juppo"",""M. Ritala"",""M. Leskel a""]]",[1997],"[""J. Vac. Sci. Technol., A""]","[""M. Juppo, M. Ritala, and M. Leskelä, J. Vac. Sci. Technol. A 15, 2330 \u00011997\u0002.""]" +,,Ni(acac)2,O2,557–559,"[557,558,559]","["""","""",""""]","[""Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films"",""Atomic layer epitaxy of copper - Growth and selectivity in the Cu (II)-2,2,6,6-tetramethyl-3,5-heptanedionate/ H _2 process"",""Atomic layer chemical vapour deposition of copper""]","[[""A Niskanen"",""A. Rahtu"",""T. Sajavaara"",""K. Arstila"",""M. Ritala"",""M. Leskel a""],[""P. M rtensson"",""J.-O. Carlsson""],[""A. U. Mane"",""S. A. Shivashankar""]]","[2005,1998,2004]","[""J. Electrochem. Soc."",""J. Electrochem. Soc."",""Mater. Sci. Semicond. Process.""]","[""A. Niskanen, A. Rahtu, T. Sajavaara, K. Arstila, M. Ritala, and M. Leskelä, J. Electrochem. Soc. 152, G25 \u00012005\u0002."",""P. Mårtensson and J.-O. Carlsson, J. Electrochem. Soc. 145, 2926 \u00011998\u0002."",""A. U. Mane and S. A. Shivashankar, Mater. Sci. Semicond. 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Afifuddin, P.-T. Chen, M. Godlewski, A. Szczerbakov, E. M. Goldys, T. L. Tansley, and J. A. Freitas Jr., J. Cryst. Growth 246, 237 \u00012002\u0002.""]" +,,Ni(apo)2,O3,560,[560],"[""""]","[""Atomic Layer Deposition of Copper Seed Layers""]","[[""R. Solanki"",""B. Pathangey""]]",[2000],"[""Electrochem. Solid-State Lett.""]","[""R. Solanki and B. Pathangey, Electrochem. Solid-State Lett. 3, 479 \u00012000\u0002.""]" +,,Ni(dmg)2,O3,560,[560],"[""""]","[""Atomic Layer Deposition of Copper Seed Layers""]","[[""R. Solanki"",""B. Pathangey""]]",[2000],"[""Electrochem. Solid-State Lett.""]","[""R. Solanki and B. Pathangey, Electrochem. Solid-State Lett. 3, 479 \u00012000\u0002.""]" +,Ni,Ni(acac)2,H2,561,[561],"[""""]","[""Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy""]","[[""K. Kopalko"",""M. Godlewski"",""E. Guziewicz"",""E. usakowska"",""W. Paszkowicz"",""J. Domaga a"",""E. Dynowska"",""A. Szczerbakow"",""A. W ojcik"",""M. R. 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Growth 107, 96 \u00011991\u0002.""]" +,,ZnMe2,Et2Te,680,[680],"[""""]","[""Low temperature growth of AlGaP and GaP on Si substrates by atomic layer epitaxy""]","[[""J. R. Gong"",""S. Nakamura"",""M. Leonard"",""S. M. Bedair"",""N. A. El-Masry""]]",[1992],"[""J. Electron. Mater.""]","[""J. R. Gong, S. Nakamura, M. Leonard, S. M. Bedair, and N. A. El- Masry, J. Electron. Mater. 21, 965 \u00011992\u0002.""]" +,,ZnMe2,MeAyTe,680,[680],"[""""]","[""Low temperature growth of AlGaP and GaP on Si substrates by atomic layer epitaxy""]","[[""J. R. Gong"",""S. Nakamura"",""M. Leonard"",""S. M. Bedair"",""N. A. El-Masry""]]",[1992],"[""J. Electron. Mater.""]","[""J. R. Gong, S. Nakamura, M. Leonard, S. M. Bedair, and N. A. El- Masry, J. Electron. Mater. 21, 965 \u00011992\u0002.""]" +,ZnF,Zn(OAc)2,HF,415,[415],"[""""]","[""Atomic-layer growth of TiO _2 -II thin films""]","[[""J. Aarik"",""A. Aidla"",""T. Uustare""]]",[1996],"[""Philos. Mag. Lett.""]","[""J. Aarik, A. Aidla, and T. Uustare, Philos. Mag. Lett. 73, 115 \u00011996\u0002.""]" +31,Gallium,,,,[],[],[],[],[],[],[] diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_013_table_008/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_013_table_008/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..31a68499b3368085906603e0749d8d3bc942816e --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_013_table_008/gold.csv @@ -0,0 +1,58 @@ +Z,Material,Reactant A,Reactant B,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,Ga2O3,Ga(acac)3,O3,681 and 682,"[681,682]","["""",""""]","[""(GaAs) _m (GaP) _n low dimensional short-period superlattice fabricated by atomic layer epitaxy"",""Laser-assisted atomic layer epitaxy of GaP in chemical beam epitaxy""]","[[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano""],[""M. Yoshimoto"",""A. Kajimoto"",""H. Matsunami""]]","[1998,1993]","[""Microelectron. Eng."",""Thin Solid Films""]","[""H. Isshiki, Y. Aoyagi, and T. Sugano, Microelectron. Eng. 43/44, 301 \u00011998\u0002."",""M. Yoshimoto, A. Kajimoto, and H. Matsunami, Thin Solid Films 225, 70 \u00011993\u0002.""]" +,,Ga(acac)3,H2O,681,[681],"[""""]","[""(GaAs) _m (GaP) _n low dimensional short-period superlattice fabricated by atomic layer epitaxy""]","[[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano""]]",[1998],"[""Microelectron. Eng.""]","[""H. Isshiki, Y. Aoyagi, and T. Sugano, Microelectron. Eng. 43/44, 301 \u00011998\u0002.""]" +,GaN,Ga,N2,683 and 684,"[683,684]","["""",""""]","[""GaAs atomic layer epitaxy by hydride VPE"",""Solid composition of In _ 1-x Ga _x As grown by halogen transport atomic layer epitaxy""]","[[""A. Usui"",""H. Sunakawa""],[""A. Koukitu"",""H. Nakai"",""A. Saegusa"",""T. Suzuki"",""O. Nomura"",""H. Seki""]]","[1986,1988]","[""Jpn. J. Appl. Phys., Part 2"",""Jpn. J. Appl. Phys., Part 2""]","[""A. Usui and H. Sunakawa, Jpn. J. Appl. Phys., Part 2 25, L212 \u00011986\u0002."",""A. Koukitu, H. Nakai, A. Saegusa, T. Suzuki, O. Nomura, and H. Seki, Jpn. J. Appl. Phys., Part 2 27, L744 \u00011988\u0002.""]" +,,GaCl,NH3,685 and 686,"[685,686]","["""",""""]","[""ATOMIC LAYER EPITAXY OF III--V -COMPOUNDS IN A HYDRIDE VAPOR-PHASE SYSTEM"",""INSITU MONITORING OF SURFACE KINETICS IN GaAs ATOMIC LAYER EPITAXY BY SURFACE PHOTOABSORPTION METHOD""]","[[""J. Ahopelto"",""H. P. Kattelus"",""J. Saarilahti"",""I. Suni""],[""A. Koukitu"",""H. Ikeda"",""H. Suzuki"",""H. Seki""]]","[1990,1991]","[""J. Cryst. Growth"",""Jpn. J. Appl. Phys., Part 2""]","[""J. Ahopelto, H. P. Kattelus, J. Saarilahti, and I. Suni, J. Cryst. Growth 99, 550 \u00011990\u0002."",""A. Koukitu, H. Ikeda, H. Suzuki, and H. Seki, Jpn. J. Appl. Phys., Part 2 30, L1712 \u00011991\u0002.""]" +,,GaCl3,NH3,687,[687],"[""""]","[""In Situ Gravimetric Monitoring of the GaAs Growth Process in Atomic Layer Epitaxy""]","[[""A. Koukitu"",""H. Ikeda"",""H. Yasutake"",""H. Seki""]]",[1991],"[""Jpn. J. Appl. Phys., Part 2""]","[""A. Koukitu, H. Ikeda, H. Yasutake, and H. Seki, Jpn. J. Appl. Phys., Part 2 30, L1847 \u00011991\u0002.""]" +,,GaMe3,NH3,290 and 688–692,"[290,688,689,690,691,692]","["""","""","""","""","""",""""]","[""Observation and control of surface morphology of AlP grown by atomic layer epitaxy"",""THERMAL-DESORPTION OF GALLIUMCHLORIDE ADSORBED ON GaAs (100)"",""TEMPERATURE PROGRAMMED DESORPTION STUDY OF GALLIUM CHLORIDE ADSORBED ON GaAs -SURFACES"",""INSITU OPTICAL CHARACTERIZATION OF GaAs -SURFACES UNDER ALTERNATING SUPPLY OF GaCl AND AsH _3"",""Study of self-limiting growth mechanism in chloride ALE"",""IN SITU OPTICAL CHARACTERIZATION OF GaAs AND InP SURFACES DURING CHLORIDE ATOMIC LAYER EPITAXY""]","[[""M. Ishii"",""S. Iwai"",""T. Ueki"",""Y. Aoyagi""],[""C. Sasaoka"",""Y. Kato"",""A. Usui""],[""C. Sasaoka"",""Y. Kato"",""A. Usui""],[""K. Nishi"",""A. Usui"",""H. Sakaki""],[""A. 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Sakaki, Thin Solid Films 225, 47 \u00011993\u0002.""]" +,,GaEt3,NH3,"294, 693, and 694","[294,693,694]","["""","""",""""]","[""OPTICAL IN-SITU ANALYSIS OF GaAs / AlAs / GaAs AND GaAs /( Al ) GaAs / GaAs ATOMIC LAYER GROWTH USING GaCl _3 , AlCl _3 AND AsH _3"",""IN-SITU OBSERVATION OF HALOGEN-TRANSPORT ATOMIC LAYER EPITAXY OF GaAs IN INERT CARRIER GAS SYSTEM"",""DETERMINATION OF SURFACE CHEMICAL-SPECIES IN GaAs ATOMIC LAYER EPITAXY BY IN-SITU GRAVIMETRIC MONITORING""]","[[""M. Akamatsu"",""S. Narahara"",""T. Kobayashi"",""F. Hasegawa""],[""Y. Takahashi"",""M. Yagi"",""A. Koukitu"",""H. Seki""],[""A. Koukitu"",""N. Takahashi"",""Y. Miura"",""H. Seki""]]","[1994,1993,1994]","[""Appl. Surf. Sci."",""Jpn. J. Appl. Phys., Part 2"",""Jpn. J. Appl. Phys., Part 2""]","[""M. Akamatsu, S. Narahara, T. Kobayashi, and F. Hasegawa, Appl. Surf. Sci. 82/83, 228 \u00011994\u0002."",""Y. Takahashi, M. Yagi, A. Koukitu, and H. Seki, Jpn. J. Appl. Phys., Part 2 32, L1277 \u00011993\u0002."",""A. Koukitu, N. Takahashi, Y. Miura, and H. Seki, Jpn. J. Appl. Phys., Part 2 33, L613 \u00011994\u0002.""]" +,,GaEt3,NH3 o,695,[695],"[""""]","[""IN-SITU MONITORING OF THE GROWTH-PROCESS IN GaAs ATOMIC LAYER EPITAXY BY GRAVIMETRIC AND OPTICAL METHODS""]","[[""A. Koukitu"",""N. Takahashi"",""H. Seki""]]",[1995],"[""J. Cryst. Growth""]","[""A. Koukitu, N. Takahashi, and H. Seki, J. Cryst. Growth 146, 467 \u00011995\u0002.""]" +,GaP,Ga,P,2,[2],"[""""]","[""Method for producing compound thin films""]","[[""T. Suntola"",""J. Antson""]]",[null],"[""""]","[""T. Suntola and J. Antson, U.S. Patent No. 4,058,430 \u000115 November 1977\u0002.""]" +,,GaCl,PH3,696,[696],"[""""]","[""In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy""]","[[""A. Koukitu"",""N. Takahashi"",""H. Seki""]]",[1996],"[""J. Cryst. Growth""]","[""A. Koukitu, N. Takahashi, and H. Seki, J. Cryst. Growth 163, 180 \u00011996\u0002.""]" +,,GaMe3,PH3,"299, 313, and 697–701","[299,313,697,698,699,700,701]","["""","""","""","""","""","""",""""]","[""Atomic layer epitaxy of AlAs and AlGaAs"",""Atomic layer epitaxy of AlAs using trimethylamine-alane and amino- As"",""GROWTH OF GAAS AND INAS BY ATOMIC LAYER EPITAXY USING Ga AND In CHLORIDES AND AsH _3"",""Atomic Layer Epitaxy of GaAs Using GaCl _3 and AsH _3"",""EPITAXIAL-GROWTH OF GaAs AT ONE TO 2 MONOLAYERS PER CYCLE BY ALTERNATE SUPPLY OF GaCl _3 AND AsH _3"",""ROLE OF HYDROGEN IN ATOMIC LAYER EPITAXY OF GaAs USING GaCl _3"",""INSITU OBSERVATION OF ATOMIC LAYER EPITAXY OF GaAs USING GaCl _3 BY SURFACE PHOTOABSORPTION METHOD""]","[[""T. Meguro"",""S. Iwai"",""Y. Aoyagi"",""K. Ozaki"",""Y. Yamamoto"",""T. Suzuki"",""Y. Okano"",""A. Hirata""],[""K. Fujii"",""I. Suemune"",""M. Yamanishi""],[""H. Kattelus"",""J. Ahopelto"",""I. Suni""],[""Y. Jin"",""R. Kobayashi"",""K. Fujii"",""F. Hasegawa""],[""K. Ishikawa"",""R. Kobayashi"",""S. 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Kobayashi, K. Ishikawa, S. Narahara, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 31, L1730 \u00011992\u0002."",""R. Kobayashi, S. Narahara, K. Ishikawa, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 32, L164 \u00011993\u0002.""]" +,,GaEt3,PH3 n,702,[702],"[""""]","[""Atomic layer epitaxy of GaAs using GaBr and GaI sources""]","[[""T. Taki"",""A. Koukitu""]]",[1997],"[""Appl. Surf. Sci.""]","[""T. Taki and A. Koukitu, Appl. Surf. Sci. 112, 127 \u00011997\u0002.""]" +,GaAs,GaCl,AsH3,696 and 703–716,"[696,703,704,705,706,707,708,709,710,711,712,713,714,715,716]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy"",""Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy"",""Growth and characterization of compound semiconductors by atomic layer epitaxy"",""Self-limiting mechanism in the atomic layer epitaxy of GaAs"",""Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy"",""GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy"",""New approach to the atomic layer epitaxy of GaAs using a fast gas stream"",""CARBON INCORPORATION IN GaAs LAYER GROWN BY ATOMIC LAYER EPITAXY"",""Sidewall growth by atomic layer epitaxy"",""INITIAL-STAGES OF GaAs AND AlAs GROWTH ON Si SUBSTRATES - ATOMIC-LAYER EPITAXY"",""In situ X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GaAs GROWN BY ATOMIC LAYER EPITAXY"",""THE ROLE OF SURFACE AND GAS-PHASE REACTIONS IN ATOMIC LAYER EPITAXY"",""Atomic layer epitaxy of device quality GaAs"",""GaAs ATOMIC LAYER EPITAXY USING THE KrF EXCIMER LASER"",""The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine""]","[[""A. Koukitu"",""N. Takahashi"",""H. Seki""],[""A. Doi"",""Y. Aoyagi"",""S. Namba""],[""M. A. Tischler"",""S. M. Bedair""],[""M. A. Tischler"",""S. M. Bedair""],[""M. A. Tischler"",""N. G. Anderson"",""S. M. Bedair""],[""S. P. DenBaars"",""C. A. Beyler"",""A. Hariz"",""P. D. Dapkus""],[""M. Ozeki"",""K. Mochizuki"",""N. Ohtsuka"",""K. Kodama""],[""K. Mochizuki"",""M. Ozeki"",""K. Kodama"",""N. Ohtsuka""],[""Y. Ide"",""B. T. McDermott"",""M. Hashemi"",""S. M. Bedair"",""W. D. Goodhue""],[""K. Kitahara"",""N. Ohtsuka"",""M. Ozeki""],[""K. Kodama"",""M. Ozeki"",""K. Mochizuki"",""N. Ohtsuka""],[""P. D. Dapkus"",""S. P. DenBaars"",""Q. Chen"",""W. G. Jeong"",""B. Y. Maa""],[""E. Colas"",""R. Bhat"",""B. J. Skromme"",""G. C. Nihous""],[""Y. Kawakyu"",""H. Ishikawa"",""M. Sasaki"",""M. Mashita""],[""A. Watanabe"",""T. Isu"",""M. Hata"",""T. Kamijoh"",""Y. Katayama""]]","[1996,1986,1986,1986,1986,1987,1988,1988,1988,1989,1989,1989,1989,1989,1989]","[""J. Cryst. Growth"",""Appl. Phys. Lett."",""J. 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Kodama, and N. Ohtsuka, J. Cryst. Growth 93, 557 \u00011988\u0002."",""Y. Ide, B. T. McDermott, M. Hashemi, S. M. Bedair, and W. D. Goodhue, Appl. Phys. Lett. 53, 2314 \u00011988\u0002."",""K. Kitahara, N. Ohtsuka, and M. Ozeki, J. Vac. Sci. Technol. B 7, 700 \u00011989\u0002."",""K. Kodama, M. Ozeki, K. Mochizuki, and N. Ohtsuka, Appl. Phys. Lett. 54, 656 \u00011989\u0002."",""P. D. Dapkus, S. P. DenBaars, Q. Chen, W. G. Jeong, and B. Y. Maa, Prog. Cryst. Growth. Charact. Mater. 19, 137 \u00011989\u0002."",""E. Colas, R. Bhat, B. J. Skromme, and G. C. Nihous, Appl. Phys. Lett. 55, 2769 \u00011989\u0002."",""Y. Kawakyu, H. Ishikawa, M. Sasaki, and M. Mashita, Jpn. J. Appl. Phys., Part 2 28, L1439 \u00011989\u0002."",""A. Watanabe, T. Isu, M. Hata, T. Kamijoh, and Y. Katayama, Jpn. J. Appl. Phys., Part 2 28, L1080 \u00011989\u0002.""]" +,,GaCl3,AsH3,"303, 304, and 717–721","[303,304,717,718,719,720,721]","["""","""","""","""","""","""",""""]","[""Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor: Atomic-Layer Epitaxy of GaAs , AlAs and GaP on Si"",""Atomic layer epitaxy of AlAs : growth mechanism"",""Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)"",""DIRECT OBSERVATION OF GaAs ATOMIC LAYER EPITAXY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION"",""RHEED AND XPS OBSERVATIONS OF TRIMETHYLGALLIUM ADSORPTION ON GaAs (001) SURFACES - RELEVANCE TO ATOMIC LAYER EPITAXY"",""Atomic layer epitaxy of planar-doped structures for nonalloyed contacts and field-effect transistor"",""INSITU X -RAY PHOTOEMISSION SPECTROSCOPY FOR ATOMIC LAYER EPITAXY OF InP AND GaAs""]","[[""K. Kitahara"",""M. Ozeki"",""K. Nakajima""],[""M. Ozeki"",""N. Ohtsuka""],[""M. L. Yu"",""U. Memmert"",""T. F. Kuech""],[""T. H. Chiu""],[""B. Y. Maa"",""P. D. Dapkus""],[""M. Hashemi"",""J. Ramdani"",""B. T. McDermott"",""K. Reid"",""S. M. Bedair""],[""K. Kodama"",""M. Ozeki"",""Y. Sakuma"",""K. Mochizuki"",""N. Ohtsuka""]]","[1993,1994,1989,1989,1990,1990,1990]","[""Jpn. J. Appl. Phys., Part 1"",""Appl. Surf. Sci."",""Appl. Phys. Lett."",""Appl. Phys. Lett."",""J. Electron. Mater."",""Appl. Phys. Lett."",""J. Cryst. Growth""]","[""K. Kitahara, M. Ozeki, and K. Nakajima, Jpn. J. Appl. Phys., Part 1 32, 1051 \u00011993\u0002."",""M. Ozeki and N. Ohtsuka, Appl. Surf. Sci. 82/83, 233 \u00011994\u0002."",""M. L. Yu, U. Memmert, and T. F. Kuech, Appl. Phys. Lett. 55, 1011 \u00011989\u0002."",""T. H. Chiu, Appl. Phys. Lett. 55, 1244 \u00011989\u0002."",""B. Y. Maa and P. D. Dapkus, J. Electron. Mater. 19, 289 \u00011990\u0002."",""M. Hashemi, J. Ramdani, B. T. McDermott, K. Reid, and S. M. Bedair, Appl. Phys. Lett. 56, 964 \u00011990\u0002."",""K. Kodama, M. Ozeki, Y. Sakuma, K. Mochizuki, and N. Ohtsuka, J. Cryst. Growth 99, 535 \u00011990\u0002.""]" +,,GaCl3,As,720,[720],"[""""]","[""Atomic layer epitaxy of planar-doped structures for nonalloyed contacts and field-effect transistor""]","[[""M. Hashemi"",""J. Ramdani"",""B. T. McDermott"",""K. Reid"",""S. M. Bedair""]]",[1990],"[""Appl. Phys. Lett.""]","[""M. Hashemi, J. Ramdani, B. T. McDermott, K. Reid, and S. M. Bedair, Appl. Phys. Lett. 56, 964 \u00011990\u0002.""]" +,,GaBr,AsH3,722,[722],"[""""]","[""Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy""]","[[""J. R. Creighton"",""K. R. Lykke"",""V. A. Shamamian"",""B. D. Kay""]]",[1990],"[""Appl. Phys. Lett.""]","[""J. R. Creighton, K. R. Lykke, V. A. Shamamian, and B. D. Kay, Appl. Phys. Lett. 57, 279 \u00011990\u0002.""]" +,,GaI,AsH3,722,[722],"[""""]","[""Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy""]","[[""J. R. Creighton"",""K. R. Lykke"",""V. A. Shamamian"",""B. D. Kay""]]",[1990],"[""Appl. Phys. Lett.""]","[""J. R. Creighton, K. R. Lykke, V. A. Shamamian, and B. D. Kay, Appl. Phys. Lett. 57, 279 \u00011990\u0002.""]" +,,GaMe3,AsH3,"153, 305–308, 311, 313, 315, 318, 321, 698, 701, and 723–771","[153,305,306,307,308,311,313,315,318,321,698,701,723,724,725,726,727,728,729,730,731,732,733,734,735,736,737,738,739,740,741,742,743,744,745,746,747,748,749,750,751,752,753,754,755,756,757,758,759,760,761,762,763,764,765,766,767,768,769,770,771]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""Atomic layer deposition of BN thin films"",""Atomic layer epitaxy of device quality AlGaAs and AlAs"",""ATOMIC LAYER EPITAXY OF ALAS AND (ALAS)N(GAAS)N SUPERLATTICES USING DIMETHYLALUMINUMHYDRIDE AS THE AL SOURCE"",""Atomic layer epitaxy of AlAs and (AlAs) _n (GaAs) _s"",""Surface processes of selective growth by atomic layer epitaxy"",""Real-time optical diagnostics for measuring and controlling epitaxial growth"",""Atomic layer epitaxy of AlAs using trimethylamine-alane and amino- As"",""Atomic Layer Epitaxy of AlAs Using Dimethylethylamine Alane"",""Atomic layer epitaxy of AlAs and (AlAs) _n (GaAs) _n superlattices with a new aluminum source ethyldimethylamine alane"",""Study on the characteristics of aluminum thin films prepared by atomic layer deposition"",""Atomic Layer Epitaxy of GaAs Using GaCl _3 and AsH _3"",""INSITU OBSERVATION OF ATOMIC LAYER EPITAXY OF GaAs USING GaCl _3 BY SURFACE PHOTOABSORPTION METHOD"",""Atomic layer epitaxy of GaAs by chemical beam epitaxy"",""Control of GaAs on Si Interface Using Atomic Layer Epitaxy"",""THE MECHANISM OF ATOMIC LAYER EPITAXY OF GAAS USING TRIMETHYLGALLIUM AND ARSINE"","""",""ATOMIC LAYER EPITAXY OF GaAs USING nitrogen CARRIER GAS"",""ATOMIC LAYER EPITAXY OF GaAs USING N _2 CARRIER GAS"",""Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs"",""Trimethylgallium Reactions on As -Stabilized and Ga -Stabilized GaAs (100) Surfaces"",""Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing"",""Atomic layer epitaxy on (001) GaAs : real-time spectroscopy"","""",""A model for the atomic layer epitaxy of GaAs"",""The surface chemistry and kinetics of GaAs atomic layer epitaxy"",""THE IMPACT OF SHORT EXPOSURE TIMES ON THE ALE SELF-LIMITING PROCESS - POTENTIAL MECHANISMS"",""Atomic layer epitaxy of GaAs with a 2 m/h growth rate"",""GaAs/AlGaAs atomic layer epitaxy in a commercial MOCVD reactor"",""SURFACE-REACTION MECHANISMS IN GaAs ATOMIC LAYER EPITAXY"",""CRYSTALLOGRAPHIC SELECTIVE GROWTH OF GaAs BY ATOMIC LAYER EPITAXY"",""ADJUSTING TRIMETHYLGALLIUM INJECTION TIME TO EXPLORE ATOMIC LAYER EPITAXY OF GAAS BETWEEN 425-DEGREES-C AND 500-DEGREES-C BY ORGANOMETALLIC VAPOR-PHASE EPITAXY"",""ATOMIC-FORCE MICROSCOPY STUDY OF SURFACE-MORPHOLOGY OF GaAs GROWN BY ATOMIC LAYER EPITAXY USING TRIMETHYLGALLIUM AND ARSINE"",""GROWTH-PROCESSES OF GaAs GROWN BY ATOMIC LAYER EPITAXY REVEALED BY ATOMIC-FORCE MICROSCOPY"","""",""Atomic layer epitaxy of GaAs and GaAs _x P _ 1-x on nominally oriented GaAs (111) substrates with high quality surface and interfaces"",""Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors"",""Surface smoothing of GaAs microstructure by atomic layer epitaxy"",""Nucleation and surface roughness in self-limiting monolayer epitaxy of GaAs"","""",""REACTION-MECHANISMS OF TERTIARYBUTYLARSINE ON GaAs (001) SURFACES AND ITS RELEVANCE TO ATOMIC LAYER EPITAXY AND CHEMICAL BEAM EPITAXY"",""Use of tertiarybutylarsine in atomic layer epitaxy and laser-assisted atomic layer epitaxy of device quality GaAs"",""STUDY OF SURFACE-REACTIONS IN ATOMIC LAYER EPITAXY OF GaAs USING TRIMETHYLGALLIUM BY REFLECTANCE DIFFERENCE SPECTROSCOPY AND MASS-SPECTROSCOPY"",""Real-time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs"",""GROWTH OF GaAs BY VACUUM ATOMIC LAYER EPITAXY USING TERTIARYBUTYLARSINE"",""Growth mechanisms in atomic layer epitaxy of GaAs"",""An X-ray standing wave study of ultrathin InAs films in GaAs (001) grown by atomic layer epitaxy"",""Surface processes in laser-atomic layer epitaxy (laser- ALE ) of GaAs"",""Atomic layer epitaxy of GaAs using triethylgallium and arsine"",""Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium"",""Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium ( TEG ) and AsH _3"",""Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum"",""Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH _3"",""Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy"",""Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions"",""Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium"",""Atomic layer epitaxy of GaAs and role of As -source materials on self-limiting mechanism"",""Desorption properties of amine species during atomic layer epitaxy of GaAs using amino- As"",""Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl"",""GaAs growth by atomic layer epitaxy using diethylgalliumchloride"",""Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs"",""A Proposed Atomic-Layer-Deposition of Germanium on Si Surface""]","[[""B. M rlid"",""M. Ottosson"",""U. Pettersson"",""K. Larsson"",""J.-O. Carlsson""],[""N. Hayafuji"",""G. M. Eldallal"",""A. Dip"",""P. C. Colter"",""N. A. El-Masry"",""S. M. Bedair""],[""M. Ishizaki"",""N. Kano"",""J. Yoshino"",""H. Kukimoto""],[""M. Ishizaki"",""N. Kano"",""J. Yoshino"",""H. Kukimoto""],[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano"",""S. Iwai"",""T. Meguro""],[""D. E. Aspnes"",""I. Kamiya"",""H. Tanaka"",""R. Bhat"",""L. T. Florez"",""J. P. Harbison"",""W. E. Quinn"",""M. Tamargo"",""S. Gregory"",""M. A. A. Pudensi"",""S. A. Schwarz"",""M. J. S. P. Brasil"",""R. E. Nahory""],[""K. Fujii"",""I. Suemune"",""M. Yamanishi""],[""M. Nagano"",""S. Iwai"",""K. Nemoto"",""Y. Aoyagi""],[""S. Hirose"",""N. Kano"",""K. Hara"",""H. Munekata"",""H. Kukimoto""],[""Y. J. Lee"",""S.-W. Kang""],[""Y. Jin"",""R. Kobayashi"",""K. Fujii"",""F. Hasegawa""],[""R. Kobayashi"",""S. Narahara"",""K. Ishikawa"",""F. Hasegawa""],[""T. H. Chiu"",""J. E. Cunningham"",""Robertson, Jr., A."",""D. L. Malm""],[""K. Kitahara"",""N. Ohtsuka"",""O. Ueda"",""M. Funagura"",""M. Ozeki""],[""A. Watanabe"",""T. Kamijoh"",""M. Hata"",""T. Isu"",""Y. Katayama""],[],[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""],[""S. Yokoyama"",""M. Shinohara"",""N. Inoue""],[""K. G. Reid"",""H. M. Urdianyk"",""S. M. Bedair""],[""M. Sasaki"",""Y. Kawakyu"",""H. Ishikawa"",""M. Mashita""],[""J. P. Simko"",""T. Meguro"",""S. Iwai"",""K. Ozasa"",""A. Hirata"",""Y. Aoyagi"",""T. Sugano""],[""D. E. Aspnes"",""I. Kamiya"",""R. Bhat""],[],[""M. L. Yu""],[""J. R. Creighton"",""B. A. Bansenauer""],[""K. G. Reid"",""A. F. Myers"",""N. A. El-Masry"",""S. M. Bedair""],[""A. Dip"",""G. M. Eldallal"",""P. C. Colter"",""N. Hayafuji"",""S. M. Bedair""],[""H. Liu"",""P. A. Zawadzki"",""P. E. Norris""],[""M. Mashita"",""M. Sasaki"",""Y. Kawakyu"",""H. Ishikawa""],[""H. Isshiki"",""Y. Aoyagi"",""T. Sugano"",""S. Iwai"",""T. Meguro""],[""C. A. Wang"",""D. M. Tracy""],[""S. J. Park"",""J. S. Ha"",""J. R. Ro"",""J. K. Sim"",""E. 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Ishii"",""Y. Matsubara"",""H. Hasegawa""],[""Q. Chen"",""P. D. Dapkus""],[""T. Kurabayashi"",""K. Kono"",""H. Kikuchi"",""J. Nishizawa"",""M. Esashi""],[""Y. Oyama"",""K. Tezuka"",""K. Suto"",""J.-I. Nishizawa""],[""J. Nishizawa"",""T. Kurabayashi"",""P. P otka"",""H. Kikuchi"",""T. Hamano""],[""J. Nishizawa"",""T. Kurabayashi"",""P. Plotka"",""H. Kikuchi"",""T. Hamano""],[""T. Ohno"",""Y. Oyama"",""K. Saito"",""K. Suto"",""J. Nishizawa""],[""M. A it-Lhouss"",""J. L. Casta no"",""B. J. Garc ia"",""J. Piqueras""],[""K. Fujii"",""I. Suemune"",""T. Koui"",""M. Yamanishi""],[""K. Fujii"",""I. Suemune"",""M. Yamanishi""],[""C. Sasaoka"",""M. Yoshida"",""A. Usui""],[""K. Mori"",""M. Yoshida"",""A. Usui"",""H. Terao""],[""P. Yeo"",""R. Ar es"",""S. P. Watkins"",""G. A. Horley"",""P. O'Brien"",""A. C. Jones""],[""S. Sugahara"",""Y. Uchida"",""T. Kitamura"",""T. Nagai"",""M. Matsuyama"",""T. Hattori"",""M. 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Aarik"",""T. Uustare"",""A. Aidla"",""A. Niskanen"",""M. Ritala"",""M. Leskel a"",""A. H rsta""]]",[2001],"[""J. Cryst. Growth""]","[""K. Kukli et al., J. Cryst. Growth 231, 262 \u00012001\u0002.""]" +,,Y(thd)3,O3,"219, 237, 814, and 815","[219,237,814,815]","["""","""","""",""""]","[""ZnO / Al _2 O _3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements"",""Effect of Hf Sources, Oxidizing Agents, and NH _3 / Ar Plasma on the Properties of HfAlO _x Films Prepared by Atomic Layer Deposition"",""Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide"",""Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor""]","[[""J. W. Elam"",""Z. A. Zechrist"",""S. M. George""],[""T. Kawahara"",""K. Torii"",""R. Mitsuhashi"",""A. Muto"",""A. Horiuchi"",""H. Ito"",""H. Kitajima""],[""K. Kukli"",""K. Forsgren"",""J. Aarik"",""T. Uustare"",""A. Aidla"",""A. Niskanen"",""M. 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H rsta""]]",[2002],"[""Thin Solid Films""]","[""K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskelä, and A. 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Phys. 92, 1833 \u00012002\u0002.""]" +,,ZrCl4,O2,835 and 836,"[835,836]","["""",""""]","[""Properties of atomic layer deposited ( Ta _ 1�x Nb _x ) _2 O _5 solid solution films and Ta _2 O _5 -- Nb _2 _O 5 nanolaminates"",""NbCl (s) AS A PRECURSOR IN ATOMIC LAYER EPITAXY""]","[[""K. Kukli"",""M. Ritala"",""M. Leskel a""],[""K.-E. Elers"",""M. Ritala"",""M. Leskel a"",""E. Rauhala""]]","[1999,1994]","[""J. Appl. Phys."",""Appl. Surf. Sci.""]","[""K. Kukli, M. Ritala, and M. Leskelä, J. Appl. Phys. 86, 5656 \u00011999\u0002."",""K.-E. Elers, M. Ritala, M. Leskelä, and E. Rauhala, Appl. Surf. Sci. 82/83, 468 \u00011994\u0002.""]" +,,ZrI4,H2O,837,[837],"[""""]","[""Deposition of molybdenum thin films by an alternate supply of MoCl _5 and Zn""]","[[""M. Juppo"",""M. Vehkam aki"",""M. Ritala"",""M. Leskel a""]]",[1998],"[""J. Vac. Sci. Technol., A""]","[""M. Juppo, M. Vehkamäki, M. Ritala, and M. Leskelä, J. Vac. Sci. Technol. 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Soc. 151, C753 \u00012004\u0002.""]" +,,ZrCp2Me2,H2O,844,[844],"[""""]","[""Ruthenium Oxide Nanotube Arrays Fabricated by Atomic Layer Deposition Using a Carbon Nanotube Template""]","[[""Y.-S. Min"",""E. J. Bae"",""K. S. Jeong"",""Y. J. Cho"",""J.-H. Lee"",""W. B. Choi"",""G.-S. Park""]]",[2003],"[""Adv. Mater.""]","[""Y.-S. Min, E. J. Bae, K. S. Jeong, Y. J. Cho, J.-H. Lee, W. B. Choi, and G.-S. Park, Adv. Mater. \u0001Weinheim, Ger.\u0002 15, 1019 \u00012003\u0002.""]" diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_014_table_009/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_014_table_009/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..09568cf4aad4dbd39aac5ba9ac91b851aa714799 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_014_table_009/gold.csv @@ -0,0 +1,57 @@ +Z,Material,Reactant A,Reactant B,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,ZrCp2Me2,O3,842 and 845,"[842,845]","["""",""""]","[""Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films"",""Deposition of palladium and ruthenium eta -diketonates on alumina and silica supports in gas and liquid phase""]","[[""O.-K. Kwon"",""S.-H. Kwon"",""H.-S. Park"",""S.-W. Kang""],[""M. Lashdaf"",""T. Hatanp a a"",""A. O. I. Krause"",""J. Lahtinen"",""M. Lindblad"",""M. Tiitta""]]","[2004,2003]","[""Electrochem. Solid-State Lett."",""Appl. Catal., A.""]","[""O.-K. Kwon, S.-H. Kwon, H.-S. Park, and S.-W. Kang, Electrochem. Solid-State Lett. 7, C46 \u00012004\u0002."",""M. Lashdaf, T. Hatanpää, A. O. I. Krause, J. Lahtinen, M. Lindblad, and M. Tiitta, Appl. Catal., A 241, 51 \u00012003\u0002.""]" +,,Zr(OiPr)2(dmae)2,H2O,846,[846],"[""""]","[""Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd) _3 and Oxygen""]","[[""T. Aaltonen"",""M. Ritala"",""K. Arstila"",""J. Keinonen"",""M. Leskel a""]]",[2004],"[""Chem. Vap. Deposition""]","[""T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskelä, Chem. Vap. Deposition 10, 215 \u00012004\u0002.""]" +,,Zr(OtBu)4,H2O,"471, 473, 474, and 847–851","[471,473,474,847,848,849,850,851]","["""","""","""","""","""","""","""",""""]","[""The characteristics of TiN films deposited by cyclic chemical vapor deposition"",""TiN diffusion barrier grown by atomic layer deposition method for Cu metallization"",""In situ mass spectrometry study on surface reactions in atomic layer deposition of TiN and Ti ( Al ) N thin films"",""Substrate-independent palladium atomic layer deposition"",""GROWTH AND CHARACTERIZATION OF CdS EPILAYERS ON (100) GaAs BY ATOMIC LAYER EPITAXY"",""Low-temperature, chemically driven atomic-layer epitaxy: In situ monitored growth of CdS/ZnSe (100)"",""In Situ Investigation of the Surface Chemistry of Atomic-Layer Epitaxial Growth of II--VI Semiconductor Thin Films"",""A near-edge X -ray absorption fine structure study of atomic layer epitaxy: the chemistry of the growth of CdS layers on ZnSe (100)""]","[[""J. Uhm"",""S. Lee"",""J. Lee"",""Y. D. Kim"",""H. Jeon"",""T. Cha"",""K. Yi""],[""J. Uhm"",""H. Jeon""],[""M. Juppo"",""A. Rahtu"",""M. Ritala""],[""J. J. Senkevich"",""F. Tang"",""D. Rogers"",""J. T. Drotar"",""C. Jezewski"",""W. A. Lanford"",""G. C. Wang"",""T. M. Lu""],[""T. Tadokoro"",""S. Ohta"",""T. Ishiguro"",""Y. Ichinose"",""S. Kobayashi"",""N. Yamamoto""],[""Y. Luo"",""D. Slater"",""M. Han"",""J. Moryl"",""Osgood, Jr., R. M.""],[""Y. Luo"",""D. Slater"",""M. Han"",""J. Moryl"",""Osgood, Jr., R. M.""],[""M. Han"",""Y. Luo"",""J. E. Moryl"",""Osgood, Jr., R. M."",""J. G. Chen""]]","[1999,2001,2002,2003,1993,1997,1998,1998]","[""J. Korean Phys. Soc."",""Jpn. J. Appl. Phys., Part 1"",""Chem. Mater."",""Chem. Vap. Deposition"",""J. Cryst. Growth"",""Appl. Phys. Lett."",""Langmuir"",""Surf. Sci.""]","[""J. Uhm, S. Lee, J. Lee, Y. D. Kim, H. Jeon, T. Cha, and K. Yi, J. Korean Phys. Soc. 35, S765 \u00011999\u0002."",""J. Uhm and H. Jeon, Jpn. J. Appl. Phys., Part 1 40, 4657 \u00012001\u0002."",""M. 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Osgood, Jr., and J. G. Chen, Surf. Sci. 415, 251 \u00011998\u0002.""]" +,,Zr(OtBu)4,O2 e,852–855,"[852,853,854,855]","["""","""","""",""""]","[""An investigation of the surface reaction mechanisms of alternating-grown, ordered atomic layers: CdS on ZnSe (100)"",""Studies of heteroepitaxial growth of thin II�-VI semiconductor layers by sequential ultrahigh vacuum dosing"",""The structure and strain relief in epitaxially grown CdSe on ZnSe by atomic layer epitaxy"",""Photoluminescence properties of single CdSe quantum dots in ZnSe obtained by self-organized growth""]","[[""M. Han"",""Y. Luo"",""J. E. Moryl"",""Osgood, Jr., R. M.""],[""Y. Luo"",""M. Han"",""D. A. Slater"",""Osgood, Jr., R. M.""],[""Y. Z. Feng"",""S. P. Guo""],[""M. Y. Shen"",""T. Goto"",""E. Kurtz"",""Z. Zhu"",""T. Yao""]]","[1999,2000,1996,1998]","[""Surf. Sci."",""J. Vac. Sci. Technol., A"",""J. Mater. Sci. Lett."",""J. Phys.: Condens. Matter""]","[""M. Han, Y. Luo, J. E. Moryl, and R. M. Osgood, Jr., Surf. Sci. 425, 259 \u00011999\u0002."",""Y. Luo, M. Han, D. A. Slater, and R. M. Osgood, Jr., J. Vac. Sci. Technol. A 18, 438 \u00012000\u0002."",""Y. Z. Feng and S. P. Guo, J. Mater. Sci. Lett. 15, 1824 \u00011996\u0002."",""M. Y. Shen, T. Goto, E. Kurtz, Z. Zhu, and T. Yao, J. Phys.: Condens. Matter 10, L171 \u00011998\u0002.""]" +,,Zr(OtBu)4,N2O,851,[851],"[""""]","[""A near-edge X -ray absorption fine structure study of atomic layer epitaxy: the chemistry of the growth of CdS layers on ZnSe (100)""]","[[""M. Han"",""Y. Luo"",""J. E. Moryl"",""Osgood, Jr., R. M."",""J. G. Chen""]]",[1998],"[""Surf. Sci.""]","[""M. Han, Y. Luo, J. E. Moryl, R. M. Osgood, Jr., and J. G. Chen, Surf. Sci. 415, 251 \u00011998\u0002.""]" +,,Zr(OtBu)4,Ar e,855,[855],"[""""]","[""Photoluminescence properties of single CdSe quantum dots in ZnSe obtained by self-organized growth""]","[[""M. Y. Shen"",""T. Goto"",""E. Kurtz"",""Z. Zhu"",""T. Yao""]]",[1998],"[""J. Phys.: Condens. Matter""]","[""M. Y. Shen, T. Goto, E. Kurtz, Z. Zhu, and T. Yao, J. Phys.: Condens. Matter 10, L171 \u00011998\u0002.""]" +,,Zr(OtBu)2(dmae)2,H2O,846 and 856,"[846,856]","["""",""""]","[""Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd) _3 and Oxygen"",""Self-organized CdSe/ZnSe quantum dots on a ZnSe(111)A surface""]","[[""T. Aaltonen"",""M. Ritala"",""K. Arstila"",""J. Keinonen"",""M. Leskel a""],[""E. Kurtz"",""H. D. Jung"",""T. Hanada"",""Z. Zhu"",""T. Sekiguchi"",""T. Yao""]]","[2004,1998]","[""Chem. Vap. Deposition"",""J. Cryst. Growth""]","[""T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskelä, Chem. Vap. Deposition 10, 215 \u00012004\u0002."",""E. Kurtz, H. D. Jung, T. Hanada, Z. Zhu, T. Sekiguchi, and T. Yao, J. Cryst. Growth 184/185, 242 \u00011998\u0002.""]" +,,Zr(dmae)4,H2O,846,[846],"[""""]","[""Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd) _3 and Oxygen""]","[[""T. Aaltonen"",""M. Ritala"",""K. Arstila"",""J. Keinonen"",""M. Leskel a""]]",[2004],"[""Chem. Vap. Deposition""]","[""T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskelä, Chem. Vap. Deposition 10, 215 \u00012004\u0002.""]" +,,Zr(thd)4,O3 e,842,[842],"[""""]","[""Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films""]","[[""O.-K. Kwon"",""S.-H. Kwon"",""H.-S. Park"",""S.-W. Kang""]]",[2004],"[""Electrochem. Solid-State Lett.""]","[""O.-K. Kwon, S.-H. Kwon, H.-S. Park, and S.-W. Kang, Electrochem. Solid-State Lett. 7, C46 \u00012004\u0002.""]" +,,Zr(NMe2)4,H2O,857 and 858,"[857,858]","["""",""""]","[""Growth and time-resolved photoluminescence study of self-organized CdSe quantum dots in ZnSe"",""Growth and characterization of ultra-thin quantum wells of II�-VI semiconductors for optoelectronic applications""]","[[""E. Kurtz"",""T. Sekiguchi"",""Z. Zhu"",""T. Yao"",""J. X. Shen"",""Y. Oka"",""M. Y. Shen"",""T. Goto""],[""I. Hern andez-Calder on"",""M. Garc ia-Rocha"",""P. D iaz-Arencibia""]]","[1999,2004]","[""Superlattices Microstruct."",""Phys. Status Solidi B""]","[""E. Kurtz, T. Sekiguchi, Z. Zhu, T. Yao, J. X. Shen, Y. Oka, M. Y. Shen, and T. Goto, Superlattices Microstruct. 25, 119 \u00011999\u0002."",""I. Hernández-Calderón, M. García-Rocha, and P. Díaz-Arencibia, Phys. Status Solidi B 241, 558 \u00012004\u0002.""]" +,,Zr(NEt2)4,H2O,857,[857],"[""""]","[""Growth and time-resolved photoluminescence study of self-organized CdSe quantum dots in ZnSe""]","[[""E. Kurtz"",""T. Sekiguchi"",""Z. Zhu"",""T. Yao"",""J. X. Shen"",""Y. Oka"",""M. Y. Shen"",""T. Goto""]]",[1999],"[""Superlattices Microstruct.""]","[""E. Kurtz, T. Sekiguchi, Z. Zhu, T. Yao, J. X. Shen, Y. Oka, M. Y. Shen, and T. Goto, Superlattices Microstruct. 25, 119 \u00011999\u0002.""]" +,,Zr(NEt2)4,O2 e,853,[853],"[""""]","[""Studies of heteroepitaxial growth of thin II�-VI semiconductor layers by sequential ultrahigh vacuum dosing""]","[[""Y. Luo"",""M. Han"",""D. A. Slater"",""Osgood, Jr., R. M.""]]",[2000],"[""J. Vac. Sci. Technol., A""]","[""Y. Luo, M. Han, D. A. Slater, and R. M. Osgood, Jr., J. Vac. Sci. Technol. A 18, 438 \u00012000\u0002.""]" +,,Zr(NEtMe)4,H2O,857,[857],"[""""]","[""Growth and time-resolved photoluminescence study of self-organized CdSe quantum dots in ZnSe""]","[[""E. Kurtz"",""T. Sekiguchi"",""Z. Zhu"",""T. Yao"",""J. X. Shen"",""Y. Oka"",""M. Y. Shen"",""T. Goto""]]",[1999],"[""Superlattices Microstruct.""]","[""E. Kurtz, T. Sekiguchi, Z. Zhu, T. Yao, J. X. Shen, Y. Oka, M. Y. Shen, and T. Goto, Superlattices Microstruct. 25, 119 \u00011999\u0002.""]" +,,Zr[N(SiMe3)2]2Cl2,H2O,859,[859],"[""""]","[""ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CdTe -FILMS GROWN ON CdTe (110) SUBSTRATES""]","[[""M. Pessa"",""P. Huttunen"",""M. A. Herman""]]",[1983],"[""J. Appl. Phys.""]","[""M. Pessa, P. Huttunen, and M. A. Herman, J. Appl. Phys. 54, 6047 \u00011983\u0002.""]" +,Zr3N4,Zr(NMe2)4,NH3,860,[860],"[""""]","[""Epitaxial growth and electronic structure of CdTe films""]","[[""M. Pessa"",""O. Jylh a"",""P. Huttunen"",""M. A. Herman""]]",[1984],"[""J. Vac. Sci. Technol., A""]","[""M. Pessa, O. Jylhä, P. Huttunen, and M. A. Herman, J. Vac. Sci. Technol. A 2, 418 \u00011984\u0002.""]" +,,Zr(NEtMe)4,NH3,860,[860],"[""""]","[""Epitaxial growth and electronic structure of CdTe films""]","[[""M. Pessa"",""O. Jylh a"",""P. Huttunen"",""M. A. Herman""]]",[1984],"[""J. Vac. Sci. Technol., A""]","[""M. Pessa, O. Jylhä, P. Huttunen, and M. A. Herman, J. Vac. Sci. Technol. A 2, 418 \u00011984\u0002.""]" +,,Zr(NEt2)4,NH3,860,[860],"[""""]","[""Epitaxial growth and electronic structure of CdTe films""]","[[""M. Pessa"",""O. Jylh a"",""P. Huttunen"",""M. A. Herman""]]",[1984],"[""J. Vac. Sci. Technol., A""]","[""M. Pessa, O. Jylhä, P. Huttunen, and M. A. Herman, J. Vac. Sci. Technol. A 2, 418 \u00011984\u0002.""]" +,ZrxAlyOz,ZrCl4,Al(OEt)3,188,[188],"[""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""]]",[1994],"[""Appl. Surf. Sci.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002.""]" +,ZrxSiyOz,ZrCl4,Si(OEt)4,188 and 861,"[188,861]","["""",""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry"",""Atomic layer epitaxy of CdTe on the polar (111)A and (111)B surfaces of CdTe substrates""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""],[""M. Pessa"",""O. Jylh a"",""M. A. Herman""]]","[1994,1984]","[""Appl. Surf. Sci."",""J. Cryst. Growth""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002."",""M. Pessa, O. Jylhä, and M. A. Herman, J. Cryst. Growth 67, 255 \u00011984\u0002.""]" +,,ZrCl4,Si(OnBu)4,188 and 404,"[188,404]","["""",""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry"",""Surface-controlled deposition of Sc _2 O _3 thin films by atomic layer epitaxy using eta -diketonate and organometallic precursors""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""],[""M. Putkonen"",""M. Nieminen"",""J. Niinist o"",""L. Niinist o""]]","[1994,2001]","[""Appl. Surf. Sci."",""Chem. Mater.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002."",""M. Putkonen, M. Nieminen, J. Niinistö, and L. Niinistö, Chem. Mater. 13, 4701 \u00012001\u0002.""]" +,,Zr(OtBu)4,SiCl4,403,[403],"[""""]","[""Metal fluoride thin films prepared by atomic layer deposition""]","[[""M. Ylilammi"",""T. Ranta-aho""]]",[1994],"[""J. Electrochem. Soc.""]","[""M. Ylilammi and T. Ranta-aho, J. Electrochem. Soc. 141, 1278 \u00011994\u0002.""]" +,,Zr(NEt2)4,Si(OnBu)4,405,[405],"[""""]","[""Ultra-thin TiO _2 films by a novel method""]","[[""S. B. Desu""]]",[1992],"[""Mater. Sci. Eng., B""]","[""S. B. Desu, Mater. Sci. Eng., B 13, 299 \u00011992\u0002.""]" +,ZrxTiyOz,ZrCl4,Ti(OiPr)4,"188, 517, and 518","[188,517,518]","["""","""",""""]","[""Atomic layer controlled deposition of SiO _2 and Al _2 O _3 using ABAB ... binary reaction sequence chemistry"",""ATOMIC LAYER EPITAXY OF Cd _ 1-X Mn _X Te GROWN ON CdTe (111) B SUBSTRATES"",""GROWTH OF Cd _ 1-X Mn _X Te FILMS WITH 0 < x < 0.9 BY ATOMIC LAYER EPITAXY""]","[[""S. M. George"",""O. Sneh"",""A. C. Dillon"",""M. L. Wise"",""A. W. Ott"",""L. A. Okada"",""J. D. Way""],[""M. A. Herman"",""O. Jylh a"",""M. Pessa""],[""M. Pessa"",""O. Jylh a""]]","[1994,1984,1984]","[""Appl. Surf. Sci."",""J. Cryst. Growth"",""Appl. Phys. Lett.""]","[""S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Appl. Surf. Sci. 82/83, 460 \u00011994\u0002."",""M. A. Herman, O. Jylhä, and M. Pessa, J. Cryst. Growth 66, 480 \u00011984\u0002."",""M. Pessa and O. Jylhä, Appl. Phys. Lett. 45, 646 \u00011984\u0002.""]" +41,Niobium,,,,[],[],[],[],[],[],[] +,Nb2O5,Nb(OEt)5,H2O,"184, 206, 465, 820, 862, and 863","[184,206,465,820,862,863]","["""","""","""","""","""",""""]","[""Sequential surface chemical-reaction limited growth of high-quality Al _2 O _3 dielectrics"",""Atomic layer deposition of ultrathin and conformal Al _2 O _3 films on BN particles"",""Atomic layer deposition of TiO _2 thin films from Ti(O ^i Pr) _2 (dmae) _2 and H _2 O"","""",""Surface morphology of CdTe films grown on CdTe (111) substrates by atomic layer epitaxy"",""Growth mechanism in atomic layer epitaxy. 2. A model of the growth process of CdTe on CdTe (111) substrates""]","[[""G. S. Higashi"",""C. G. Fleming""],[""J. D. Ferguson"",""A. W. Weimer"",""S. M. George""],[""J. P. Lee"",""M. H. Park"",""T. M. Chung"",""Y. Kim"",""M. M. Sung""],[],[""M. A. Herman"",""M. Vulli"",""M. Pessa""],[""M. A. Herman"",""O. Jylh a"",""M. Pessa""]]","[1989,2000,2004,null,1985,1986]","[""Appl. Phys. Lett."",""Thin Solid Films"",""Bull. Korean Chem. Soc."","""",""J. Cryst. Growth"",""Cryst. Res. Technol.""]","[""G. S. Higashi and C. G. Fleming, Appl. Phys. Lett. 55, 1963 \u00011989\u0002."",""J. D. Ferguson, A. W. Weimer, and S. M. George, Thin Solid Films 371, 95 \u00012000\u0002."",""J. P. Lee, M. H. Park, T. M. Chung, Y. Kim, and M. M. Sung, Bull. Korean Chem. Soc. 25, 475 \u00012004\u0002."",""K. Kukli, M. Ritala, and M. Leskelä, Nanostruct. Mater. 8, 785 \u00011997\u0002."",""M. A. Herman, M. Vulli, and M. Pessa, J. Cryst. Growth 73, 403 \u00011985\u0002."",""M. A. Herman, O. Jylhä, and M. Pessa, Cryst. Res. Technol. 21, 969 \u00011986\u0002.""]" +,NbN,NbCl5,NH3,"480, 482, and 864","[480,482,864]","["""","""",""""]","[""Properties including step coverage of TiN thin films prepared by atomic layer deposition"",""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films"",""Growth mechanism in atomic layer epitaxy. 1. R E-EVAPORATION OF Cd AND Te FROM CdTe (111) SURFACES MONITORED BY AUGER-ELECTRON SPECTROSCOPY""]","[[""J. Kim"",""H. Hong"",""K. Oh"",""C. Lee""],[""M. Juppo"",""M. Ritala"",""M. Leskel a""],[""M. A. Herman"",""O. Jylh a"",""M. Pessa""]]","[2003,2000,1986]","[""Appl. Surf. Sci."",""J. Electrochem. Soc."",""Cryst. Res. Technol.""]","[""J. Kim, H. Hong, K. Oh, and C. Lee, Appl. Surf. Sci. 210, 231 \u00012003\u0002."",""M. Juppo, M. Ritala, and M. Leskelä, J. Electrochem. Soc. 147, 3377 \u00012000\u0002."",""M. A. Herman, O. Jylhä, and M. Pessa, Cryst. Res. Technol. 21, 841 \u00011986\u0002.""]" +,,NbCl5,NH3 + cat.,482 and 864,"[482,864]","["""",""""]","[""Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films"",""Growth mechanism in atomic layer epitaxy. 1. R E-EVAPORATION OF Cd AND Te FROM CdTe (111) SURFACES MONITORED BY AUGER-ELECTRON SPECTROSCOPY""]","[[""M. Juppo"",""M. Ritala"",""M. Leskel a""],[""M. A. Herman"",""O. Jylh a"",""M. Pessa""]]","[2000,1986]","[""J. Electrochem. Soc."",""Cryst. Res. Technol.""]","[""M. Juppo, M. Ritala, and M. Leskelä, J. Electrochem. Soc. 147, 3377 \u00012000\u0002."",""M. A. Herman, O. Jylhä, and M. Pessa, Cryst. Res. Technol. 21, 841 \u00011986\u0002.""]" +,,NbCl5,Me2NNH2,495,[495],"[""""]","[""Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization""]","[[""D.-H. Kim"",""Y. J. Kim"",""J.-H. Park"",""J. H. Kim""]]",[2004],"[""Mater. Sci. Eng. C""]","[""D.-H. Kim, Y. J. Kim, J.-H. Park, and J. H. Kim, Mater. Sci. Eng., C 24, 289 \u00012004\u0002.""]" +42,Molybdenum,,,,[],[],[],[],[],[],[] +,MoxN,MoCl5,NH3,480,[480],"[""""]","[""Properties including step coverage of TiN thin films prepared by atomic layer deposition""]","[[""J. Kim"",""H. Hong"",""K. Oh"",""C. Lee""]]",[2003],"[""Appl. Surf. Sci.""]","[""J. Kim, H. Hong, K. Oh, and C. Lee, Appl. Surf. Sci. 210, 231 \u00012003\u0002.""]" +,,MoCl5,Me2NNH2,495,[495],"[""""]","[""Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization""]","[[""D.-H. Kim"",""Y. J. Kim"",""J.-H. Park"",""J. H. Kim""]]",[2004],"[""Mater. Sci. Eng. C""]","[""D.-H. Kim, Y. J. Kim, J.-H. Park, and J. H. Kim, Mater. Sci. Eng., C 24, 289 \u00012004\u0002.""]" +,Mo,MoCl5,Zn,865,[865],"[""""]","[""GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .3. REEVAPORATION OF Cd AND Te FROM CdTe (111) SURFACES AND THICK ELEMENTAL DEPOSITS MONITORED BY QUADRUPOLE-MASS SPECTROMETRY""]","[[""M. A. Herman"",""P. Juza"",""W. Faschinger"",""H. Sitter""]]",[1988],"[""Cryst. Res. Technol.""]","[""M. A. Herman, P. Juza, W. Faschinger, and H. Sitter, Cryst. Res. Technol. 23, 307 \u00011988\u0002.""]" +44,Ruthenium,,,,[],[],[],[],[],[],[] +,RuO,Ru(CpEt)2,O2,866,[866],"[""""]","[""Atomic-layer epitaxy of (111) CdTe on BaF _2 substrates""]","[[""W. Faschinger"",""H. Sitter"",""P. Juza""]]",[1988],"[""Appl. Phys. Lett.""]","[""W. Faschinger, H. Sitter, and P. Juza, Appl. Phys. Lett. 53, 2519 \u00011988\u0002.""]" +,Ru,RuCp2,O2,867–869,"[867,868,869]","["""","""",""""]","[""ATOMIC-LAYER EPITAXY OF (100) CdTe ON GaAs SUBSTRATES"",""OBSERVATION OF DIFFERENT REFLECTED HIGH-ENERGY ELECTRON-DIFFRACTION PATTERNS DURING ATOMIC LAYER EPITAXY GROWTH OF CdTe EPILAYERS"",""OBSERVATION OF RHEED INTENSITY VARIATIONS DURING ALE -GROWTH OF CdTe -EPILAYERS""]","[[""W. Faschinger"",""H. Sitter""],[""W. Faschinger"",""P. Juza"",""H. Sitter""],[""P. Juza"",""W. Faschinger"",""H. Sitter""]]","[1990,1991,1992]","[""J. Cryst. Growth"",""J. Cryst. Growth"",""Microchim. Acta""]","[""W. Faschinger and H. Sitter, J. Cryst. Growth 99, 566 \u00011990\u0002."",""W. Faschinger, P. Juza, and H. Sitter, J. Cryst. Growth 115, 692 \u00011991\u0002."",""P. Juza, W. Faschinger, and H. Sitter, Microchim. Acta 107, 265 \u00011992\u0002.""]" +,,Ru(CpEt)2,O2,866,[866],"[""""]","[""Atomic-layer epitaxy of (111) CdTe on BaF _2 substrates""]","[[""W. Faschinger"",""H. Sitter"",""P. Juza""]]",[1988],"[""Appl. Phys. Lett.""]","[""W. Faschinger, H. Sitter, and P. Juza, Appl. Phys. Lett. 53, 2519 \u00011988\u0002.""]" +,,Ru(CpEt)2,NH3 e,870 and 871,"[870,871]","["""",""""]","[""Ultra high vacuum atomic layer epitaxy of CdTe"",""Reversibility of the elementary mechanisms of atomic-layer epitaxy and sublimation of (001) CdTe""]","[[""H. Sitter"",""W. Faschinger""],[""V. B. Veron"",""A. Arnoult"",""B. Daudin"",""S. Tatarenko""]]","[1993,1996]","[""Thin Solid Films"",""Phys. Rev. B""]","[""H. Sitter and W. Faschinger, Thin Solid Films 225, 250 \u00011993\u0002."",""V. B. Veron, A. Arnoult, B. Daudin, and S. Tatarenko, Phys. Rev. B 54, R5267 \u00011996\u0002.""]" +,,Ru(od)3,O2,872,[872],"[""""]","[""Ultrahigh vacuum atomic layer epitaxy of Cd 1-x Mn _x Te layers grown on ZnTe/GaAs (100) substrates: reflection mass spectrometry studies""]","[[""J. T. Sadowski"",""M. A. Herman""]]",[1997],"[""Thin Solid Films""]","[""J. T. Sadowski and M. A. Herman, Thin Solid Films 306, 266 \u00011997\u0002.""]" +,,Ru(thd)3,H2,873,[873],"[""""]","[""Nanoscale surface clustering on CdTe epilayers""]","[[""L. Marsal"",""H. Mariette"",""Y. Samson"",""J. L. Rouviere"",""E. Picard""]]",[1998],"[""Appl. Phys. Lett.""]","[""L. Marsal, H. Mariette, Y. Samson, J. L. Rouviere, and E. Picard, Appl. Phys. Lett. 73, 2974 \u00011998\u0002.""]" +,,Ru(thd)3,O2,869 and 874,"[869,874]","["""",""""]","[""OBSERVATION OF RHEED INTENSITY VARIATIONS DURING ALE -GROWTH OF CdTe -EPILAYERS"",""Self-regulated growth of tilted superlattices by atomic layer epitaxy""]","[[""P. Juza"",""W. Faschinger"",""H. Sitter""],[""J. M. Hartmann"",""M. Charleux"",""J. Cibert"",""H. Mariette""]]","[1992,1998]","[""Microchim. Acta"",""Appl. Phys. Lett.""]","[""P. Juza, W. Faschinger, and H. Sitter, Microchim. Acta 107, 265 \u00011992\u0002."",""J. M. Hartmann, M. Charleux, J. Cibert, and H. Mariette, Appl. Phys. Lett. 72, 3151 \u00011998\u0002.""]" +46,Palladium,,,,[],[],[],[],[],[],[] +,Pd,Pd(thd)2,H2,873,[873],"[""""]","[""Nanoscale surface clustering on CdTe epilayers""]","[[""L. Marsal"",""H. Mariette"",""Y. Samson"",""J. L. Rouviere"",""E. Picard""]]",[1998],"[""Appl. Phys. Lett.""]","[""L. Marsal, H. Mariette, Y. Samson, J. L. Rouviere, and E. Picard, Appl. Phys. Lett. 73, 2974 \u00011998\u0002.""]" +,,Pd(thd)2,O2,564,[564],"[""""]","[""Atmospheric pressure atomic layer epitaxy of ZnO using a chloride source""]","[[""K. Kaiya"",""N. Yoshii"",""K. Omichi"",""N. Takahashi"",""T. Nakamura"",""S. Okamoto"",""H. Yamamoto""]]",[2001],"[""Chem. Mater.""]","[""K. Kaiya, N. Yoshii, K. Omichi, N. Takahashi, T. Nakamura, S. Okamoto, and H. Yamamoto, Chem. Mater. 13, 1952 \u00012001\u0002.""]" +,,Pd(hfac)2,H2,875,[875],"[""""]","[""Excitons trapped on self-organised CdTe islands in wide ZnTe quantum wells""]","[[""T. Taliercio"",""P. Lefebvre"",""N. Magnea"",""J. All egre"",""H. Mathieu""]]",[1998],"[""J. Cryst. Growth""]","[""T. Taliercio, P. Lefebvre, N. Magnea, J. Allègre, and H. Mathieu, J. Cryst. Growth 184/185, 288 \u00011998\u0002.""]" +,,Pd(hfac)2,HCOCOOH,875,[875],"[""""]","[""Excitons trapped on self-organised CdTe islands in wide ZnTe quantum wells""]","[[""T. Taliercio"",""P. Lefebvre"",""N. Magnea"",""J. All egre"",""H. Mathieu""]]",[1998],"[""J. Cryst. Growth""]","[""T. Taliercio, P. Lefebvre, N. Magnea, J. Allègre, and H. Mathieu, J. Cryst. Growth 184/185, 288 \u00011998\u0002.""]" +48,Cadmium,,,,[],[],[],[],[],[],[] +,CdS,Cd,S,147 and 876,"[147,876]","["""",""""]","[""MOLECULAR LAYER EPITAXY"",""The role of 2 D islands in the epitaxial growth of (001) CdTe""]","[[""J. Nishizawa"",""H. Abe"",""T. Kurabayashi""],[""L. Carbonell"",""S. Tatarenko"",""J. Cibert"",""J. M. Hartmann"",""G. Mula"",""V. H. Etgens"",""A. Arnoult""]]","[1985,1998]","[""J. Electrochem. Soc."",""Appl. Surf. Sci.""]","[""J. Nishizawa, H. Abe, and T. Kurabayashi, J. Electrochem. Soc. 132, 1197 \u00011985\u0002."",""L. Carbonell, S. Tatarenko, J. Cibert, J. M. Hartmann, G. Mula, V. H. Etgens, and A. Arnoult, Appl. Surf. Sci. 123/124, 283 \u00011998\u0002.""]" +,,CdCl2,H2S,623,[623],"[""""]","[""Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy""]","[[""T. Takeda"",""T. Kurosu"",""M. 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Rouvi ere""],[""M. Garc ia-Rocha"",""I. Hern andez-Calder on""],[""T. Volkmann"",""M. Ahr"",""M. Biehl""]]","[1994,1999,1999,2002,2002,2004]","[""Appl. Surf. Sci."",""J. Cryst. Growth"",""Microelectron. J."",""J. Cryst. Growth"",""Surf. Rev. Lett."",""Phys. Rev. B""]","[""V. E. Drozd and V. B. Aleskovskii, Appl. Surf. Sci. 82/83, 591 \u00011994\u0002."",""L. Marsal, Y. Samson, J. L. Rouviere, and H. Mariette, J. Cryst. Growth 201/202, 1226 \u00011999\u0002."",""H. Mariette, M. Charleux, J. M. Hartmann, F. Kany, D. Martrou, L. Marsal, N. Magnèa, and J. L. Rouviére, Microelectron. J. 30, 329 \u00011999\u0002."",""H. Mariette, L. Marsal, L. Besombes, F. Tinjod, B. Gilles, K. Kheng, and J. L. Rouvière, J. Cryst. Growth 237/239, 227 \u00012002\u0002."",""M. García-Rocha and I. Hernández-Calderón, Surf. Rev. Lett. 9, 1667 \u00012002\u0002."",""T. Volkmann, M. Ahr, and M. Biehl, Phys. Rev. B 69, 165303 \u00012004\u0002.""]" +,CdSe,Cd,Se,"147–149, 611, and 882–886","[147,148,149,611,882,883,884,885,886]","["""","""","""","""","""","""","""","""",""""]","[""MOLECULAR LAYER EPITAXY"",""A study of ZnTe films grown on glass substrates using an atomic layer evaporation method"",""ATOMIC-LAYER GROWTH OF GaAs BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY"",""Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)- Si Substrate"",""Adsorption, desorption, and interdiffusion in atomic layer epitaxy of CdTe and CdZnTe"",""Dimensional structural transition in CdTe/Cd _x Zn _ 1�x Te nanostructures"",""LOW-TEMPERATURE EPITAXY OF HgTe , CdTe , AND HgCdTe USING FLOW MODULATION TECHNIQUES"",""ATOMIC LAYER EPITAXY OF CdTe ON GaAs , BY ORGANOMETALLIC VAPOR-PHASE EPITAXY"",""""]","[[""J. Nishizawa"",""H. Abe"",""T. Kurabayashi""],[""M. Ahonen"",""M. Pessa"",""T. Suntola""],[""Y. Aoyagi"",""A. Doi"",""S. Iwai"",""S. Namba""],[""C. H. Liu"",""M. Yokoyama"",""Y. K. Su""],[""E. M. Larramendi"",""O. de Melo"",""M. Hern andez V elez"",""M. C. Tamargo""],[""H. S. Lee"",""H. L. Park"",""T. W. Kim""],[""I. Bhat"",""H. Ehsani"",""W. S. Wang"",""S. K. Ghandhi"",""N. H. Karam""],[""W.-S. Wang"",""H. E. Ehsani"",""I. B. Bhat""],[]]","[1985,1980,1987,1996,2004,2004,1992,1992,null]","[""J. Electrochem. Soc."",""Thin Solid Films"",""J. Vac. Sci. Technol., B"",""Jpn. J. Appl. Phys., Part 1"",""J. Appl. Phys."",""Appl. Phys. Lett."",""J. Vac. Sci. Technol., B"",""J. Cryst. Growth"",""""]","[""J. Nishizawa, H. Abe, and T. Kurabayashi, J. Electrochem. Soc. 132, 1197 \u00011985\u0002."",""M. Ahonen, M. Pessa, and T. Suntola, Thin Solid Films 65, 301 \u00011980\u0002."",""Y. Aoyagi, A. Doi, S. Iwai, and S. Namba, J. Vac. Sci. Technol. B 5, 1460 \u00011987\u0002."",""C. H. Liu, M. Yokoyama, and Y. K. Su, Jpn. J. Appl. Phys., Part 1 35, 5416 \u00011996\u0002."",""E. M. Larramendi, O. de Melo, M. Hernández Vélez, and M. C. Tamargo, J. 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Khanh, Z. E. Horváth, I. Bársony, and B. Pécz, Thin Solid Films 297, 39 \u00011997\u0002.""]" +,CdTe,Cd,Te,"147, 148, 170, 534–539, 541–543, 655, 675, 679, and 886–911","[147,148,170,534,535,536,537,538,539,541,542,543,655,675,679,886,887,888,889,890,891,892,893,894,895,896,897,898,899,900,901,902,903,904,905,906,907,908,909,910,911]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""MOLECULAR LAYER EPITAXY"",""A study of ZnTe films grown on glass substrates using an atomic layer evaporation method"",""Studies on the morphology of Al _2 O _3 thin films grown by atomic layer epitaxy"",""Cobalt-containing catalysts for the high-temperature combustion of methane"",""Zirconia-supported cobalt as catalyst for methane combustion"",""Stability of cobalt supported on ZrO _2 catalysts for methane combustion"",""Cobalt( III ) acetylacetonate chemisorbed on aluminium-nitride-modified silica: characteristics and hydroformylation activity"",""Growth of LaCoO _3 thin films from eta -diketonate precursors"",""Atomic layer deposition of nickel by the reduction of preformed nickel oxide"",""The growth-mechanism of nickel in the preparation of Ni / Al _2 O _3 catalysts studied by LEIS , XPS and catalytic activity"",""Liquid-phase hydrogenation of citral for production of citronellol: catalyst selection"",""Studies of NiO thin film formation by atomic layer epitaxy"",""SELF-LIMITING GROWTH WITH 0.5 MONOLAYER PER CYCLE IN ATOMIC LAYER EPITAXY OF ZnTe"",""Layer-by-layer epitaxial growth of GaN at low temperatures"",""ORDERED GaInP BY ATOMIC LAYER EPITAXY"","""","""",""Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium"",""Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry"",""GROWTH OF In _2 O _3 THIN-FILMS BY ATOMIC LAYER EPITAXY"",""GROWTH OF INDIUM-TIN-OXIDE THIN-FILMS BY ATOMIC LAYER EPITAXY"",""AFM and STM studies on In _2 O _3 and ITO thin films deposited by atomic layer epitaxy"",""Modifying ALE grown In _2 O _3 films by benzoyl fluoride pulses"",""Enhanced growth rate in atomic layer epitaxy of indium oxide and indium-tin oxide thin films"",""Surface chemistry of In _2 O _3 deposition using In ( CH _3 ) _3 and H _2 O in a binary reaction sequence"",""GROWTH OF In _2 S _3 THIN-FILMS BY ATOMIC LAYER EPITAXY"",""Indium-Based Interface Chemical Engineering by Electrochemistry and Atomic Layer Deposition for Copper Indium Diselenide Solar Cells"",""High-efficiency copper indium gallium diselenide ( CIGS ) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition ( ALCVD )"",""CD -free Cu(In,Ga)Se _2 thin-film solar modules with In _2 S _3 buffer layer by ALCVD"",""Growth studies and characterisation of In _2 S _3 thin films deposited by atomic layer deposition ( ALD )"",""Phonon structure of InN grown by atomic layer epitaxy"",""Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors"",""ATOMIC LAYER EPITAXY OF InP"",""High-resolution x-ray diffraction to determine the self-limiting growth in atomic layer epitaxy of InP and InAs/InP heterostructures"",""Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures"",""Atomic layer epitaxy and structural characterization of InP and InAs/InP heterostructures"",""Reflectance anisotropy as an in situ monitor for the growth of InP on (001) InP by pseudo-atmospheric pressure atomic layer epitaxy"",""Growth-Rate Self-Limitation Mechanism in InP Atomic Layer Epitaxy Studied by Surface Photo-Absorption"",""Analysis of the surface photoabsorption signal during self-limited submonolayer growth of InP in metalorganic chemical vapor deposition"",""In situ analysis of surface photoabsorption spectra during InP ALE in metal organic chemical vapor deposition"",""Atomic layer epitaxy of InP using trimethylindium and tertiarybutylphosphine""]","[[""J. Nishizawa"",""H. Abe"",""T. Kurabayashi""],[""M. Ahonen"",""M. Pessa"",""T. Suntola""],[""M. Ritala"",""H. Saloniemi"",""M. Leskel a"",""T. Prohaska"",""G. Friedbacher"",""M. Grassenbauer""],[""V. G. Milt"",""M. A. Ulla"",""E. A. Lombardo""],[""V. G. Milt"",""M. A. Ulla"",""E. A. Lombardo""],[""V. G. Milt"",""E. A. Lombardo"",""M. A. Ulla""],[""R. L. Puurunen"",""T. A. Zeelie"",""A. O. I. Krause""],[""H. Seim"",""M. Nieminen"",""L. Niinist o"",""H. Fjellv g"",""L.-S. Johansson""],[""J. Chae"",""H.-S. Park"",""S. W. Kang""],[""J. P. Jacobs"",""L. P. Lindfors"",""J. G. H. Reintjes"",""O. Jylh a"",""H. H. Brongersma""],[""P. M aki-Arvela"",""L. -P. Tiainen"",""M. Lindblad"",""K. Demirkan"",""N. Kumar, R. Sj oholm"",""T. Ollonqvist"",""J. V ayrynen"",""T. Salmi"",""D. . Murzin""],[""M. Utriainen"",""M. Kr oger-Laukkanen"",""L. Niinist o""],[""Y. Takemura"",""M. Konagai"",""H. Nakanishi"",""K. Takahashi""],[""J. Sumakeris"",""Z. Sitar"",""K. S. Ailey-Trent"",""K. L. More"",""R. F. 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Phys. 93, 1477 \u00012003\u0002.""]" +,,SnI4,O2,959 and 961–964,"[959,961,962,963,964]","["""","""","""","""",""""]","[""Morphology and crystallization kinetics in HfO _2 thin films grown by atomic layer deposition"",""Electrical and physico-chemical characterization of HfO _2 /SiO _2 gate oxide stacks prepared by atomic layer deposition"",""Atomic layer deposition of HfO _2 thin films and nanolayered HfO _2 -Al _2 O _3 -Nb _2 O _5 dielectrics"",""Comparison of HfO _2 films grown by atomic layer deposition using HfCl _4 and H _2 O or O _3 as the oxidant"",""Characterization of ultra-thin HfO _2 gate oxide prepared by using atomic layer deposition""]","[[""M.-Y. Ho"",""H. Gong"",""G. D. Wilk"",""B. W. Busch"",""M. L. Green"",""P. M. Voyles"",""D. A. Muller"",""M. Bude"",""W. H. Lin"",""A. See"",""M. E. Loomans"",""S. K. Lahiri"",""P. I. R ais anen""],[""J.-F. Damlencourt"",""O. Renault"",""D. Samour"",""A.-M. Papon"",""C. Leroux"",""F. Martin"",""S. Marthon"",""M.-N. S em eria"",""X. 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Soc. 42, 272 \u00012003\u0002.""]" +,,SnMe4,N2O4,151,[151],"[""""]","[""Rapid vapor deposition of highly conformal silica nanolaminates""]","[[""D. Hausmann"",""J. Becker"",""S. L. Wang"",""R. G. Gordon""]]",[2002],"[""Science""]","[""D. Hausmann, J. Becker, S. L. Wang, and R. G. Gordon, Science 298, 402 \u00012002\u0002.""]" +,,SnEt4,N2O4,151,[151],"[""""]","[""Rapid vapor deposition of highly conformal silica nanolaminates""]","[[""D. Hausmann"",""J. Becker"",""S. L. Wang"",""R. G. Gordon""]]",[2002],"[""Science""]","[""D. Hausmann, J. Becker, S. L. Wang, and R. G. Gordon, Science 298, 402 \u00012002\u0002.""]" +51,Antimony,,,,[],[],[],[],[],[],[] +,Sb2O5,SbCl5,H2O,952,[952],"[""""]","[""Influence of substrate temperature on atomic layer growth and properties of HfO _2 thin films""]","[[""J. Aarik"",""A. Aidla"",""A.-A. Kiisler"",""T. Uustare"",""V. Sammelselg""]]",[1999],"[""Thin Solid Films""]","[""J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, and V. Sammelselg, Thin Solid Films 340, 110 \u00011999\u0002.""]" +56,Barium,,,,[],[],[],[],[],[],[] +,BaS,Ba(CpMe5)2,H2S,808 and 809,"[808,809]","["""",""""]","[""X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high- appa materials"",""Characteristics of ZrO _2 films deposited by using the atomic layer deposition method""]","[[""S. Ferrari"",""M. Modreanu"",""G. Scarel"",""M. Fanciulli""],[""J. Lee"",""J. Koo"",""H. S. Sim"",""H. Jeon"",""Y. Won""]]","[2004,2004]","[""Thin Solid Films"",""J. Korean Phys. Soc.""]","[""S. Ferrari, M. Modreanu, G. Scarel, and M. Fanciulli, Thin Solid Films 450, 124 \u00012004\u0002."",""J. Lee, J. Koo, H. S. Sim, H. Jeon, and Y. Won, J. Korean Phys. Soc. 44, 915 \u00012004\u0002.""]" +,,Ba(thd)2,H2S,410 and 965,"[410,965]","["""",""""]","[""Growth of titanium dioxide thin films by atomic layer epitaxy"",""Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water""]","[[""M. Ritala"",""M. Leskel a""],[""R. L. Puurunen""]]","[1993,2004]","[""Thin Solid Films"",""J. Appl. Phys.""]","[""M. Ritala and M. Leskelä, Thin Solid Films 225, 288 \u00011993\u0002."",""R. L. Puurunen, J. Appl. Phys. 95, 4777 \u00012004\u0002.""]" +57,Lanthanum,,,,[],[],[],[],[],[],[] +,La2O3,La(thd)3,O2,46 and 50,"[46,50]","["""",""""]","[""Advanced materials processing by adsorption control"",""Adsorption controlled preparation of heterogeneous catalysts""]","[[""S. Haukka"",""T. Suntola""],[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""]]","[1997,1999]","[""Interface Sci."",""Adsorption and its Applications in Industry and Environmental Protection""]","[""S. Haukka and T. Suntola, Interface Sci. 75, 119 \u00011997\u0002."",""S. Haukka, E.-L. Lakomaa, and T. Suntola, Stud. Surf. Sci. Catal. 120A, 715 \u00011999\u0002.""]" +,,La(thd)3,O3,"555, 562, 966, and 967","[555,562,966,967]","["""","""","""",""""]","[""Copper nanoparticles deposited inside the pores of anodized aluminium oxide using atomic layer deposition"",""Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers"",""Combining grazing incidence X -ray diffraction and X -ray reflectivity for the evaluation of the structural evolution of HfO _2 thin films with annealing"",""Effects of precursors on nucleation in atomic layer deposition of HfO _2""]","[[""A. Johansson"",""T. T orndahl"",""L. M. Ottosson"",""M. Boman"",""J.-O. Carlsson""],[""K. S. A. Butcher"",""P. Afifuddin"",""P.-T. Chen"",""M. Godlewski"",""A. Szczerbakow"",""E. M. Goldys"",""T. L. Tansley"",""Freitas, Jr., J. A.""],[""C. Wiemer"",""S. Ferrari"",""M. Fanciulli"",""G. Pavia"",""L. Lutterotti""],[""J. Aarik"",""A. Aidla"",""A. Kikas"",""T. K a ambre"",""R. Rammula"",""P. Ritslaid"",""T. Uustare"",""V. Sammelselg""]]","[2003,2002,2004,2004]","[""Mater. Sci. Eng., C"",""J. Cryst. Growth"",""Thin Solid Films"",""Appl. Surf. Sci.""]","[""A. Johansson, T. Törndahl, L. M. Ottosson, M. Boman, and J.-O. Carlsson, Mater. Sci. Eng., C 23, 823 \u00012003\u0002."",""K. S. A. Butcher, P. Afifuddin, P.-T. Chen, M. Godlewski, A. Szczerbakov, E. M. Goldys, T. L. Tansley, and J. A. Freitas Jr., J. Cryst. Growth 246, 237 \u00012002\u0002."",""C. Wiemer, S. Ferrari, M. Fanciulli, G. Pavia, and L. Lutterotti, Thin Solid Films 450, 134 \u00012004\u0002."",""J. Aarik, A. Aidla, A. Kikas, T. Käämbre, R. Rammula, P. Ritslaid, T. Uustare, and V. Sammelselg, Appl. Surf. Sci. 230, 292 \u00012004\u0002.""]" +,,La[N(SiMe3)2]3,H2O,"407, 968, and 969","[407,968,969]","["""","""",""""]","[""An IR and NMR study of the chemisorption of TiCl _4 on silica"",""Study of thin hafnium oxides deposited by atomic layer deposition"",""Study of HfO _2 films deposited on strained Si _ 1-x Ge _x layers by atomic layer deposition""]","[[""S. Haukka"",""E.-L. Lakomaa"",""A. Root""],[""J.-J. Ganem"",""I. Trimaille"",""I. C. Vickridge"",""D. Blin"",""F. Martin""],[""J.-F. Damlencourt"",""O. Weber"",""O. Renault"",""J.-M. Hartmann"",""C. Poggi"",""F. Ducroquet"",""T. Billon""]]","[1993,2004,2004]","[""J. Phys. Chem."",""Nucl. Instrum. Methods Phys. Res., Sect. B"",""J. Appl. Phys.""]","[""S. Haukka, E.-L. Lakomaa, and A. Root, J. Phys. Chem. 97, 5085 \u00011993\u0002."",""J.-J. Ganem, I. Trimaille, I. C. Vickridge, D. Blin, and F. Martin, Nucl. Instrum. Methods Phys. Res. B 219/220, 856 \u00012004\u0002."",""J.-F. Damlencourt, O. Weber, O. Renault, J.-M. Hartmann, C. Poggi, F. Ducroquet, and T. Billon, J. Appl. Phys. 96, 5478 \u00012004\u0002.""]" +,,La(iPrAMD)3,H2O,546,[546],"[""""]","[""A mini- ALE attachment to UHV surface analysis equipment""]","[[""R. G. van Welzenis"",""R. A. M. Bink"",""H. H. Brongersma""]]",[1996],"[""Appl. Surf. Sci.""]","[""R. G. van Welzenis, R. A. M. Bink, and H. H. Brongersma, Appl. Surf. Sci. 107, 255 \u00011996\u0002.""]" +,La2S3,La(thd)3,H2S,970,[970],"[""""]","[""Characterization of HfO _2 /Si (001) interface with high-resolution Rutherford backscattering spectroscopy""]","[[""K. Nakajima"",""S. Joumori"",""M. Suzuki"",""K. Kimura"",""T. Osipowicz"",""K. L. Tok"",""J. Z. Zheng"",""A. See"",""B. C. Zhang""]]",[2004],"[""Appl. Surf. Sci.""]","[""K. Nakajima et al., Appl. Surf. Sci. 237, 416 \u00012004\u0002.""]" +,LaxSiyOx,La[N(SiMe3)2]3,(tBuO)3Si,407,[407],"[""""]","[""An IR and NMR study of the chemisorption of TiCl _4 on silica""]","[[""S. Haukka"",""E.-L. Lakomaa"",""A. Root""]]",[1993],"[""J. Phys. Chem.""]","[""S. Haukka, E.-L. Lakomaa, and A. Root, J. Phys. Chem. 97, 5085 \u00011993\u0002.""]" +58,Cerium,,,,[],[],[],[],[],[],[] +,CeO2,Ce(thd)4,O2,46 and 50,"[46,50]","["""",""""]","[""Advanced materials processing by adsorption control"",""Adsorption controlled preparation of heterogeneous catalysts""]","[[""S. Haukka"",""T. Suntola""],[""S. Haukka"",""E.-L. Lakomaa"",""T. Suntola""]]","[1997,1999]","[""Interface Sci."",""Adsorption and its Applications in Industry and Environmental Protection""]","[""S. Haukka and T. Suntola, Interface Sci. 75, 119 \u00011997\u0002."",""S. Haukka, E.-L. Lakomaa, and T. Suntola, Stud. Surf. Sci. Catal. 120A, 715 \u00011999\u0002.""]" +,,Ce(thd)4,O3,971,[971],"[""""]","[""Impact of Deposition and Annealing Temperatures on Material and Electrical Characteristics of ALD HfO _2""]","[[""D. Triyoso"",""R. Liu"",""D. Roan"",""M. Ramon"",""N. V. Edwards"",""R. Gregory"",""D. Werho"",""J. Kulik"",""G. Tam"",""E. Irwin"",""X-D. Wang"",""L. B. La"",""C. Hobbs"",""R. Garcia"",""J. Baker"",""B. E. White, Jr."",""P. Tobin""]]",[2004],"[""J. Electrochem. Soc.""]","[""D. Triyoso et al., J. Electrochem. Soc. 151, F220 \u00012004\u0002.""]" +,,Ce(thd)3phen,O3,971,[971],"[""""]","[""Impact of Deposition and Annealing Temperatures on Material and Electrical Characteristics of ALD HfO _2""]","[[""D. Triyoso"",""R. Liu"",""D. Roan"",""M. Ramon"",""N. V. Edwards"",""R. Gregory"",""D. Werho"",""J. Kulik"",""G. Tam"",""E. Irwin"",""X-D. Wang"",""L. B. La"",""C. Hobbs"",""R. Garcia"",""J. Baker"",""B. E. White, Jr."",""P. Tobin""]]",[2004],"[""J. Electrochem. Soc.""]","[""D. Triyoso et al., J. Electrochem. Soc. 151, F220 \u00012004\u0002.""]" +59,Praseodymium,,,,[],[],[],[],[],[],[] +,PrOx,Pr[N(SiMe3)2]3,H2O,972,[972],"[""""]","[""Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films""]","[[""K. Kukli"",""J. Aarik"",""M. Ritala"",""T. Uustare"",""T. Sajavaara"",""J. Lu"",""J. Sundqvist"",""A. Aidla"",""L. Pung"",""A. H rsta"",""M. Leskel a""]]",[2004],"[""J. Appl. Phys.""]","[""K. Kukli et al., J. Appl. Phys. 96, 5298 \u00012004\u0002.""]" +60,Neodymium,,,,[],[],[],[],[],[],[] +,Nd2O3,Nd(thd)3,O3,973,[973],"[""""]","[""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition""]","[[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""]]",[2004],"[""Appl. Phys. Lett.""]","[""H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and M.-H. Cho, Appl. Phys. Lett. 85, 2902 \u00012004\u0002.""]" +62,Samarium,,,,[],[],[],[],[],[],[] +,Sm2O3,Sm(thd)3,O3,973,[973],"[""""]","[""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition""]","[[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""]]",[2004],"[""Appl. Phys. Lett.""]","[""H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and M.-H. Cho, Appl. Phys. Lett. 85, 2902 \u00012004\u0002.""]" +63,Europium,,,,[],[],[],[],[],[],[] +,Eu2O3,Eu(thd)3,O3,973,[973],"[""""]","[""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition""]","[[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""]]",[2004],"[""Appl. Phys. Lett.""]","[""H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and M.-H. Cho, Appl. Phys. Lett. 85, 2902 \u00012004\u0002.""]" +64,Gadolinium,,,,[],[],[],[],[],[],[] +,Gd2O3,Gd(thd)3,O3,973,[973],"[""""]","[""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition""]","[[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""]]",[2004],"[""Appl. Phys. Lett.""]","[""H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and M.-H. Cho, Appl. Phys. Lett. 85, 2902 \u00012004\u0002.""]" diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_016_table_011/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_016_table_011/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..2e823f4dbf4611e5338f027fb3832c6cad5a6057 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_016_table_011/gold.csv @@ -0,0 +1,55 @@ +Z,Material,Reactant A,Reactant B,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +66,Dysprosium,,,,[],[],[],[],[],[],[] +,Dy2O3,Dy(thd)3,O3,973,[973],"[""""]","[""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition""]","[[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""]]",[2004],"[""Appl. Phys. Lett.""]","[""H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and M.-H. Cho, Appl. Phys. Lett. 85, 2902 \u00012004\u0002.""]" +67,Holmium,,,,[],[],[],[],[],[],[] +,Ho2O3,Ho(thd)3,O3,973,[973],"[""""]","[""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition""]","[[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""]]",[2004],"[""Appl. Phys. Lett.""]","[""H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and M.-H. Cho, Appl. Phys. Lett. 85, 2902 \u00012004\u0002.""]" +68,Erbium,,,,[],[],[],[],[],[],[] +,Er2O3,Er(thd)3,O3,973 and 974,"[973,974]","["""",""""]","[""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition"",""Optical characterization of HfO _2 thin films grown by atomic layer deposition""]","[[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""],[""J. Aarik"",""H. M andar"",""M. Kirm"",""L. Pung""]]","[2004,2004]","[""Appl. Phys. Lett."",""Thin Solid Films""]","[""H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and M.-H. Cho, Appl. Phys. Lett. 85, 2902 \u00012004\u0002."",""J. Aarik, H. Mändar, M. Kirm, and L. Pung, Thin Solid Films 466, 41 \u00012004\u0002.""]" +69,Thulium,,,,[],[],[],[],[],[],[] +,Tm2O3,Tm(thd)3,O3,973,[973],"[""""]","[""Interfacial characteristics of HfO _2 grown on nitrided Ge (100) substrates by atomic-layer deposition""]","[[""H. Kim"",""P. C. McIntyre"",""C. O. Chui"",""K. C. Saraswat"",""M.-H. Cho""]]",[2004],"[""Appl. Phys. Lett.""]","[""H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, and M.-H. Cho, Appl. Phys. Lett. 85, 2902 \u00012004\u0002.""]" +71,Lutetium,,,,[],[],[],[],[],[],[] +,Lu2O3,Lu[Cp(SiMe3)]2Cl,H2O,975,[975],"[""""]","[""Microstructure and thermal stability of HfO _2 gate dielectric deposited on Ge (100)""]","[[""E. P. Gusev"",""H. Shang"",""M. Copel"",""M. Gribelyuk"",""C. D'Emic"",""P. Kozlowski"",""T. Zabel""]]",[2004],"[""Appl. Phys. Lett.""]","[""E. P. Gusev, H. Shang, M. Copel, M. Gribelyuk, C. D’Emic, P. Kozlowski, and T. Zabel, Appl. Phys. Lett. 85, 2334 \u00012004\u0002.""]" +72,Hafnium,,,,[],[],[],[],[],[],[] +,HfO2,HfCl4,H2O,"219, 238, 244, 252, 253, 255–257, 259, 439, 822, 832, 837, 969, and 976–1008","[219,238,244,252,253,255,256,257,259,439,822,832,837,969,976,977,978,979,980,981,982,983,984,985,986,987,988,989,990,991,992,993,994,995,996,997,998,999,1000,1001,1002,1003,1004,1005,1006,1007,1008]","["""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""","""",""""]","[""ZnO / Al _2 O _3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements"",""Physical properties of ALD - Al _2 O _3 in a DRAM -capacitor equivalent structure comparing interfaces and oxygen precursors"",""Structural and optical properties of as-synthesized, Ga _2 O _3 -coated, and Al _2 O _3 -coated GaN nanowires"",""Structural and electrical characterization of Al _2 O _3 /HfO _2 /Al _2 O _3 on strained SiGe"",""TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition"",""Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminium oxide from trimethylaluminium and water,"",""Low-temperature growth of thin films of Al _2 O _3 by sequential surface chemical reaction of trimethylaluminum and H _2 O _2"","""",""Fabrication of multilayers with growth controlled by sequential surface chemical reactions"",""Template-assisted fabrication of dense, aligned arrays of titania nanotubes with well-controlled dimensions on substrates"",""Low-Temperature Deposition of Zirconium Oxide-Based Nanocrystalline Films by Alternate Supply of Zr[OC(CH _3 ) _3 ] _4 and H _2 O"",""Surface morphology and crystallinity control in the atomic layer deposition ( ALD ) of hafnium and zirconium oxide thin films"",""Deposition of molybdenum thin films by an alternate supply of MoCl _5 and Zn"",""Study of HfO _2 films deposited on strained Si _ 1-x Ge _x layers by atomic layer deposition"",""Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO _2 transistors"",""Trends of structural and electrical properties in atomic layer deposited HfO _2 films"",""Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates"",""Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition"",""Hafnium oxide films by atomic layer deposition for high- appa gate dielectric applications: analysis of the density of nanometer-thin films"",""Atomic Layer Deposition of Hafnium Oxide on Germanium substrates"",""Preparation of HfO _2 nano-films by atomic layer deposition using HfCl _4 and O _2 under atmospheric pressure"",""Growth of HfO _2 films using an alternate reaction of HfCl _4 and O _2 under atmospheric pressure"",""Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl _2 [N(SiMe _3 ) _2 ] _2 and H _2 O"",""Deposition of HfO _2 thin films in HfI _4 -based processes"",""Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films"",""Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen"",""Atomic layer deposition of polycrystalline HfO _2 films by the HfI _4 -- O _2 precursor combination"",""Analytical TEM characterization of the interfacial layer between ALD HfO _2 film and silicon substrate"",""Electrical and Physical Properties of HfO _2 Deposited via ALD Using Hf(OtBu) _4 and Ozone atop Al _2 O _3"",""Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone"",""Atomic layer deposition of hafnium dioxide films using hafnium bis(2-butanolate)bis(1-methoxy-2-methyl-2-propanolate) and water"",""Atomic layer deposition of hafnium dioxide films from 1-methoxy-2-methyl-2-propanolate complex of hafnium"",""Atomic layer deposition of hafnium dioxide films from hafnium hydroxylamide and water"",""High-k properties of atomic-layer-deposited HfO _2 films using a nitrogencontaining Hf [ N ( CH _3 ) _2 ] _4 precursor and H _2 O oxidant"",""Comparison between atomic-layer-deposited HfO2 films using O _3 or H _2 O oxidant and Hf[N(CH _3 ) _2 ] _4 precursor"",""Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor"",""Surface chemistry and electrical properties of germanium nanowires"",""Plasma-enhanced atomic-layer deposition of a HfO2 gate dielectric"",""Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water"",""Properties of HfO _2 thin films grown by ALD from hafnium tetrakis(ethylmethylamide) and water"",""Thermal and electrical properties of TaN electrode 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S. Becker"",""R. G. Gordon""]]",[2003],"[""Appl. Phys. Lett.""]","[""J. S. Becker and R. G. Gordon, Appl. Phys. Lett. 82, 2239 \u00012003\u0002.""]" +,,TaI5,O2,1043,[1043],"[""""]","[""Tungsten nitride inverse opals by atomic layer deposition""]","[[""A. Rugge"",""J. S. Becker"",""R. G. Gordon"",""S. H. Tolbert""]]",[2003],"[""Nano Lett.""]","[""A. Rugge, J. S. Becker, R. G. Gordon, and S. H. 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George, Science 303, 989 \u00012004\u0002.""]" +,,Ta(NMe2)5,H2O,466,[466],"[""""]","[""Very thin TiO _2 films prepared by plasma enhanced atomic layer deposition ( PEALD )""]","[[""J. J. Park"",""W. J. Lee"",""G. H. Lee"",""I. S. Kim"",""B. C. Shin"",""S. G. Yoon""]]",[2004],"[""Integr. Ferroelectr.""]","[""J. J. Park, W. J. Lee, G. H. Lee, I. S. Kim, B. C. Shin, and S. G. Yoon, Integr. Ferroelectr. 68, 129 \u00012004\u0002.""]" +,,Ta(NEt2)5,H2O,1050,[1050],"[""""]","[""Gas phase reaction products during tungsten atomic layer deposition using WF _6 and Si _2 H _6""]","[[""R. K. Grubbs"",""N. J. Steinmetz"",""S. M. George""]]",[2004],"[""J. Vac. Sci. Technol., B""]","[""R. K. Grubbs, N. J. Steinmetz, and S. M. George, J. Vac. Sci. Technol. B 22, 1811 \u00012004\u0002.""]" +,,Ta(NEt)(NEt2)3,H2O,1050,[1050],"[""""]","[""Gas phase reaction products during tungsten atomic layer deposition using WF _6 and Si _2 H _6""]","[[""R. K. Grubbs"",""N. J. Steinmetz"",""S. M. George""]]",[2004],"[""J. Vac. Sci. Technol., B""]","[""R. K. Grubbs, N. J. Steinmetz, and S. M. George, J. Vac. Sci. Technol. B 22, 1811 \u00012004\u0002.""]" +,TaNx,TaCl5,NH3,480 and 1051,"[480,1051]","["""",""""]","[""Properties including step coverage of TiN thin films prepared by atomic layer deposition"",""Atomic Layer Deposition of Iridium Thin Films""]","[[""J. Kim"",""H. Hong"",""K. Oh"",""C. Lee""],[""T. Aaltonen"",""M. Ritala"",""V. Sammelselg"",""M. Leskel a""]]","[2003,2004]","[""Appl. Surf. Sci."",""J. Electrochem. Soc.""]","[""J. Kim, H. Hong, K. Oh, and C. Lee, Appl. Surf. Sci. 210, 231 \u00012003\u0002."",""T. Aaltonen, M. Ritala, V. Sammelselg, and M. Leskelä, J. Electrochem. Soc. 151, G489 \u00012004\u0002.""]" +,,TaCl5,NH3 + cat.,1051,[1051],"[""""]","[""Atomic Layer Deposition of Iridium Thin Films""]","[[""T. Aaltonen"",""M. Ritala"",""V. Sammelselg"",""M. Leskel a""]]",[2004],"[""J. Electrochem. Soc.""]","[""T. Aaltonen, M. Ritala, V. Sammelselg, and M. Leskelä, J. Electrochem. Soc. 151, G489 \u00012004\u0002.""]" diff --git a/Puurunen_2005/step7_resolved_tables/tables/page_017_table_012/gold.csv b/Puurunen_2005/step7_resolved_tables/tables/page_017_table_012/gold.csv new file mode 100644 index 0000000000000000000000000000000000000000..a897761832516769230262a2d45db706b13d0626 --- /dev/null +++ b/Puurunen_2005/step7_resolved_tables/tables/page_017_table_012/gold.csv @@ -0,0 +1,40 @@ +Z,Material,Reactant A,Reactant B,Refs.,tabulus_reference_indices,tabulus_canonical_dois,tabulus_canonical_titles,tabulus_canonical_authors,tabulus_canonical_years,tabulus_canonical_venues,tabulus_raw_references +,,TaCl5,Me2NNH2,495,[495],"[""""]","[""Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization""]","[[""D.-H. Kim"",""Y. J. Kim"",""J.-H. Park"",""J. H. Kim""]]",[2004],"[""Mater. Sci. Eng. C""]","[""D.-H. Kim, Y. J. Kim, J.-H. Park, and J. H. Kim, Mater. Sci. Eng., C 24, 289 \u00012004\u0002.""]" +,,TaCl5,tBuNH2,1052,[1052],"[""""]","[""Atomic Layer Deposition of Platinum Thin Films""]","[[""T. Aaltonen"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2003],"[""Chem. Mater.""]","[""T. Aaltonen, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskelä, Chem. Mater. 15, 1924 \u00012003\u0002.""]" +,,TaCl5,AyNH2,1052,[1052],"[""""]","[""Atomic Layer Deposition of Platinum Thin Films""]","[[""T. Aaltonen"",""M. Ritala"",""T. Sajavaara"",""J. Keinonen"",""M. Leskel a""]]",[2003],"[""Chem. Mater.""]","[""T. Aaltonen, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskelä, Chem. Mater. 15, 1924 \u00012003\u0002.""]" +,,TaCl5,N2 e,1053–1055,"[1053,1054,1055]","["""","""",""""]","[""Preparation of lead sulfide thin films by the atomic layer epitaxy process"",""Growth of PbS thin films from novel precursors by atomic layer epitaxy"",""Bismuth precursors for atomic layer deposition of bismuth-containing oxide films""]","[[""M. 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Sajavaara, J. Keinonen, and M. Leskelä, Chem. Mater. 15, 1924 \u00012003\u0002.""]" +,,Ta(NMe2)5,NH3,1056 and 1057,"[1056,1057]","["""",""""]","[""CF _3 radicals as growth precursors and halogen-assisted growth on diamond (100)2 imes 1: an ab initio study"",""A quantum chemical study of the atomic layer deposition of Al _2 O _3 using AlCl _3 and H _2 O as precursors""]","[[""T. I. Hukka"",""T. A. Pakkanen"",""M. P. D'Evelyn""],[""A. Heyman"",""C. B. Musgrave""]]","[1996,2004]","[""Surf. Sci."",""J. Phys. Chem. B""]","[""T. I. Hukka, T. A. Pakkanen, and M. P. D’Evelyn, Surf. Sci. 359, 213 \u00011996\u0002."",""A. Heyman and C. B. Musgrave, J. Phys. Chem. B 108, 5718 \u00012004\u0002.""]" +,,Ta(NtBu)(NEt2)3,NH3,1058,[1058],"[""""]","[""Quantum chemical study of the mechanism of aluminum oxide atomic layer deposition""]","[[""Y. Widjaja"",""C. B. Musgrave""]]",[2002],"[""Appl. Phys. Lett.""]","[""Y. Widjaja and C. B. Musgrave, Appl. Phys. Lett. 80, 3304 \u00012002\u0002.""]" +,,Ta(NtBu)(NEt2)3,H2 e,1059 and 1060,"[1059,1060]","["""",""""]","[""Atomic layer deposition of Al _2 O _3 on H -passivated Si . I . I nitial surface reaction pathways with H / Si (100)-2 imes 1"",""Atomic layer deposition of Al _2 O _3 on H -passivated Si : Al ( CH _3 ) _2 OH surface reactions with H / Si (100)-2 imes 1""]","[[""M. D. Halls"",""K. Raghavachari""],[""M. D. Halls"",""K. Raghavachari"",""M. M. Frank"",""Y. J. Chabal""]]","[2003,2003]","[""J. Chem. Phys."",""Phys. Rev. B""]","[""M. D. Halls and K. Raghavachari, J. Chem. Phys. 118, 10221 \u00012003\u0002."",""M. D. Halls, K. Raghavachari, M. M. Frank, and Y. J. Chabal, Phys. Rev. B 68, 161302 \u00012003\u0002.""]" +,,Ta(NtBu)(NEtMe)3,NH3,1061,[1061],"[""""]","[""Density functional theory study of HfCl _4 , ZrCl _4 , and Al(CH _3 ) _3 decomposition on hydroxylated SiO _2 : Initial stage of high-k atomic layer deposition""]","[[""L. Jeloaica"",""A. Est eve"",""M. D. Rouhani"",""D. Est eve""]]",[2003],"[""Appl. Phys. Lett.""]","[""L. Jeloaica, A. Estéve, M. D. Rouhani, and D. Estéve, Appl. Phys. Lett. 83, 542 \u00012003\u0002.""]" +,,Ta(NtBu)(NEtMe)3,NH3 e,1061,[1061],"[""""]","[""Density functional theory study of HfCl _4 , ZrCl _4 , and Al(CH _3 ) _3 decomposition on hydroxylated SiO _2 : Initial stage of high-k atomic layer deposition""]","[[""L. Jeloaica"",""A. Est eve"",""M. D. Rouhani"",""D. Est eve""]]",[2003],"[""Appl. Phys. Lett.""]","[""L. Jeloaica, A. Estéve, M. D. Rouhani, and D. Estéve, Appl. Phys. Lett. 83, 542 \u00012003\u0002.""]" +,Ta,TaCl5,H2 e,515 and 1062,"[515,1062]","["""",""""]","[""Growth of manganese oxide thin films by atomic layer deposition"",""A DFT Study of the Al _2 O _3 Atomic Layer Deposition on SAM s: Effect of SAM Termination""]","[[""O. Nilsen"",""H. Fjellv g"",""A. Kjekshus""],[""Y. Xu"",""C. B. Musgrave""]]","[2003,2004]","[""Thin Solid Films"",""Chem. Mater.""]","[""O. Nilsen, H. Fjellvåg, and A. Kjekshus, Thin Solid Films 444, 44 \u00012003\u0002."",""Y. Xu and C. B. Musgrave, Chem. Mater. 16, 646 \u00012004\u0002.""]" +,,TaF5,Si2H6 p,1063,[1063],"[""""]","[""Atomic Layer Deposition Growth Reactions of Al _2 O _3 on Si (100)-2 imes 1""]","[[""M. D. Halls"",""K. Raghavachari""]]",[2004],"[""J. Phys. Chem. B""]","[""M. D. Halls and K. Raghavachari, J. Phys. Chem. B 108, 4058 \u00012004\u0002.""]" +74,Tungsten,,,,[],[],[],[],[],[],[] +,WO3,WF6,H2O,1064,[1064],"[""""]","[""""]",[[]],[null],"[""""]","[""P. Tägtström, P. Mårtensson, U. Jansson, and J.-O. Carlsson, J. Electrochem. Soc. 146, 3139 \u00011999\u0002.""]" +,,WFxOy,H2O,1064,[1064],"[""""]","[""""]",[[]],[null],"[""""]","[""P. Tägtström, P. Mårtensson, U. Jansson, and J.-O. Carlsson, J. Electrochem. Soc. 146, 3139 \u00011999\u0002.""]" +,,WOCl4,– q,1065,[1065],"[""""]","[""Simulating the atomic layer deposition of alumina from first principles""]","[[""S. D. Elliott"",""J. C. Greer""]]",[2004],"[""J. Mater. 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Scand. 50, 862 \u00011996\u0002.""]" +,,W(NtBu)2(NMe2)2,NH3,1071–1073,"[1071,1072,1073]","["""","""",""""]","[""Structure of chemical vapor deposition titania/silica gel"",""CVD --titania/silica gel carbonized due to pyrolysis of cyclohexene"",""Density functional study on the adsorption and surface reactions on SiO _2 in TiN - CVD using TiCl _4 and NH _3""]","[[""R. Leboda"",""V. M. Gunko"",""M. Marciniak"",""A. A. Malygin"",""A. A. Malkin"",""W. Grzegorczyk"",""B. J. Trznadel"",""E. M. Pakhlov"",""E. F. Voronin""],[""V. M. Gunko"",""R. Leboda"",""M. Marciniak"",""W. Grzegorczyk"",""J. Skubiszewska-Zieba"",""A. A. Malygin"",""A. A. Malkov""],[""T. Tanaka"",""T. Nakajima"",""K. Yamashita""]]","[1999,2000,2002]","[""J. Colloid Interface Sci."",""Langmuir"",""Thin Solid Films""]","[""R. Leboda et al., J. Colloid Interface Sci. 218, 23 \u00011999\u0002."",""V. M. Gunko, R. Leboda, M. Marciniak, W. Grzegorczyk, J. Skubiszewska-Zieba, A. A. Malygin, and A. A. 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Lett. 81, 304 \u00012002\u0002.""]" +,,Pb(dedtc)2,H2S,1083 and 1084,"[1083,1084]","["""",""""]","[""Modelling of ZrO _2 deposition from ZrCl _4 and H _2 O on the Si (100) surface: initial reactions and surface structures"",""Quantum chemical study of the elementary reactions in zirconium oxide atomic layer deposition""]","[[""V. V. Brodskii"",""E. A. Rykova"",""A. A. Bagatur'yants"",""A. A. Korkin""],[""Y. Widjaja"",""C. B. Musgrave""]]","[2002,2002]","[""Comput. Mater. Sci."",""Appl. Phys. Lett.""]","[""V. V. Brodskii, E. A. Rykova, A. A. Bagatur’yants, and A. A. Korkin, Comput. Mater. Sci. 24, 278 \u00012002\u0002."",""Y. Widjaja and C. B. Musgrave, Appl. Phys. Lett. 81, 304 \u00012002\u0002.""]" +83,Bismuth,,,,[],[],[],[],[],[],[] +,BiOx,Bi[N(SiMe3)2]3,H2O,1085,[1085],"[""""]","[""A generalized synchronous transit method for transition state location""]","[[""N. Govind"",""M. Petersen"",""G. Fitzgerald"",""D. King-Smith"",""J. Andzelm""]]",[2003],"[""Comput. Mater. Sci.""]","[""N. 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Miroshnichenko, A. A. Malygin, and S. I. Kol’tsov, Ogneupory 26, 22 \u00011985\u0002 \u0003Refractories 26, 82 \u00011985\u0002\u0004.""]" +6,Carbon,,,,[],[],[],[],[],[],[] +,C,CF3,–,1086,[1086],"[""""]","[""Quantum Chemical Study of Zirconium Oxide Deposition on the Si (100)-(2 imes 1) Surface""]","[[""Y. J. Widjaja"",""H. Han"",""C. B. Musgrave""]]",[2003],"[""J. Phys. Chem. B""]","[""Y. J. Widjaja, H. Han, and C. B. Musgrave, J. Phys. Chem. B 107, 9319 \u00012003\u0002.""]" +13,Aluminum,,,,[],[],[],[],[],[],[] +,Al2O3,AlCl3,H2O,1087,[1087],"[""""]","[""Mechanism and kinetics of thin zirconium and hafnium oxide film growth in an ALD reactor""]","[[""M. Deminsky"",""A. Knizhnik"",""I. Belov"",""S. Umanskii"",""E. Rykova"",""A. Bagatur'yants"",""B. Potapkin"",""M. Stoker"",""A. Korkin""]]",[2004],"[""Surf. Sci.""]","[""M. Deminsky et al., Surf. 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Scand. 50, 862 \u00011996\u0002.""]" +22,Titanium,,,,[],[],[],[],[],[],[] +,TiO2,TiCl4,H2O,1103 and 1104,"[1103,1104]","["""",""""]","["""",""""]","[[],[]]","[null,null]","["""",""""]","[""R. Leboda et al., J. Colloid Interface Sci. 218, 23 \u00011999\u0002."",""V. M. Gunko, R. Leboda, M. Marciniak, W. Grzegorczyk, J. Skubiszewska-Zieba, A. A. Malygin, and A. A. Malkov, Langmuir 16, 3227 \u00012000\u0002.""]" +,TiN,TiCl4,NH3,1105,[1105],"[""""]","[""""]",[[]],[null],"[""""]","[""T. Tanaka, T. Nakajima, and K. Yamashita, Thin Solid Films 409, 51 \u00012002\u0002.""]" +28,Copper,,,,[],[],[],[],[],[],[] +,Cu,CuCl,H2,1106–1108,"[1106,1107,1108]","["""","""",""""]","["""","""",""""]","[[],[],[]]","[null,null,null]","["""","""",""""]","[""P. Mårtensson, K. Larsson, and J.-O. Carlsson, Appl. Surf. Sci. 136, 137 \u00011998\u0002."",""P. Mårtensson, K. Larsson, and J.-O. Carlsson, Appl. Surf. Sci. 148, 9 \u00011999\u0002."",""P. Mårtensson, K. Larsson, and J.-O. Carlsson, Appl. Surf. Sci. 157, 92 \u00012000\u0002.""]" +30,Zinc,,,,[],[],[],[],[],[],[] +,ZnS,ZnCl2,H2S,1109–1111,"[1109,1110,1111]","["""","""",""""]","["""","""",""""]","[[],[],[]]","[null,null,null]","["""","""",""""]","[""T. A. Pakkanen, V. Nevalainen, M. Lindblad, and P. Makkonen, Surf. Sci. 188, 456 \u00011987\u0002."",""M. Lindblad and T. A. Pakkanen, J. Comput. Chem. 9, 581 \u00011988\u0002."",""K. Tóth, T. A. Pakkanen, P. Hirva, and J. Muilu, Surf. Sci. 277, 395 \u00011992\u0002.""]" +,ZnSe,ZnCl2,H2Se,1111,[1111],"[""""]","[""""]",[[]],[null],"[""""]","[""K. Tóth, T. A. Pakkanen, P. Hirva, and J. Muilu, Surf. Sci. 277, 395 \u00011992\u0002.""]" +,ZnTe,ZnCl2,H2Te,1111,[1111],"[""""]","[""""]",[[]],[null],"[""""]","[""K. Tóth, T. A. Pakkanen, P. Hirva, and J. Muilu, Surf. Sci. 277, 395 \u00011992\u0002.""]" +31,Gallium,,,,[],[],[],[],[],[],[] +,GaAs,GaCl,AsH3,711 and 1112–1114,"[711,1112,1113,1114]","["""","""","""",""""]","[""INITIAL-STAGES OF GaAs AND AlAs GROWTH ON Si SUBSTRATES - ATOMIC-LAYER EPITAXY"","""","""",""""]","[[""K. Kitahara"",""N. Ohtsuka"",""M. Ozeki""],[],[],[]]","[1989,null,null,null]","[""J. Vac. Sci. Technol., B"","""","""",""""]","[""K. Kitahara, N. Ohtsuka, and M. Ozeki, J. Vac. Sci. Technol. B 7, 700 \u00011989\u0002."",""Y. Mochizuki, T. Takada, and A. Usui, Jpn. J. Appl. Phys., Part 2 32, L197 \u00011993\u0002."",""Y. Mochizuki, T. Takada, and A. Usui, Phys. Rev. B 47, 13420 \u00011993\u0002."",""Y. Mochizuki, T. Takada, and A. Usui, Appl. Surf. Sci. 82–83, 200 \u00011994\u0002.""]" +40,Zirconium,,,,[],[],[],[],[],[],[] +,ZrO2,ZrCl4,H2O,1091 and 1115–1121,"[1091,1115,1116,1117,1118,1119,1120,1121]","["""","""","""","""","""","""","""",""""]","[""DFT investigation of HfCl _4 decomposition on hydroxylated SiO _2 : first stage of HfO _2 atomic layer epitaxy"","""","""","""","""","""","""",""""]","[[""A. Est eve"",""M. Djafari Rouhani"",""L. Jeloaica"",""D. Est eve""],[],[],[],[],[],[],[]]","[2003,null,null,null,null,null,null,null]","[""Comput. Mater. Sci."","""","""","""","""","""","""",""""]","[""A. Estéve, M. Djafari Rouhani, L. Jeloaica, and D. Estéve, Comput. Mater. Sci. 27, 75 \u00012003\u0002."",""V. V. Brodskii, E. A. Rykova, A. A. Bagatur’yants, and A. A. Korkin, Comput. Mater. Sci. 24, 278 \u00012002\u0002."",""Y. Widjaja and C. B. Musgrave, Appl. Phys. Lett. 81, 304 \u00012002\u0002."",""N. Govind, M. Petersen, G. Fitzgerald, D. King-Smith, and J. Andzelm, Comput. Mater. Sci. 28, 250 \u00012003\u0002."",""Y. J. Widjaja, H. Han, and C. B. Musgrave, J. Phys. Chem. B 107, 9319 \u00012003\u0002."",""M. Deminsky et al., Surf. Sci. 549, 67 \u00012004\u0002."",""J. H. Han, G. Gao, Y. Widjaja, E. Garfunkel, and C. B. Musgrave, Surf. Sci. 550, 199 \u00012004\u0002."",""M. Petersen, Comput. Mater. Sci. 30, 77 \u00012004\u0002.""]" +72,Hafnium,,,,[],[],[],[],[],[],[] +,HfO2,HfCl4,H2O,"1091, 1119, 1122, and 1123","[1091,1119,1122,1123]","["""","""","""",""""]","[""DFT investigation of HfCl _4 decomposition on hydroxylated SiO _2 : first stage of HfO _2 atomic layer epitaxy"","""","""",""""]","[[""A. Est eve"",""M. Djafari Rouhani"",""L. Jeloaica"",""D. Est eve""],[],[],[]]","[2003,null,null,null]","[""Comput. Mater. Sci."","""","""",""""]","[""A. Estéve, M. Djafari Rouhani, L. Jeloaica, and D. Estéve, Comput. Mater. Sci. 27, 75 \u00012003\u0002."",""M. Deminsky et al., Surf. Sci. 549, 67 \u00012004\u0002."",""Y. Widjaja and C. B. Musgrave, J. Chem. Phys. 117, 1931 \u00012002\u0002."",""A. Estéve, M. Djafari Rouhani, L. Jeloaica, and D. Estéve, Comput. Mater. Sci. 27, 75 \u00012003\u0002.""]" +,,HfCl4,Hf(OEt)4,1124,[1124],"[""""]","[""""]",[[]],[null],"[""""]","[""C. Mui and C. B. Musgrave, J. Phys. Chem. B 108, 15150 \u00012004\u0002.""]" +,,Hf(OEt)4,H2O,1124,[1124],"[""""]","[""""]",[[]],[null],"[""""]","[""C. Mui and C. B. Musgrave, J. Phys. Chem. B 108, 15150 \u00012004\u0002.""]" +73,Tantalum,,,,[],[],[],[],[],[],[] +,Ta2O5,TaCl5,H2O,1125,[1125],"[""""]","[""""]",[[]],[null],"[""""]","[""M. Siodmiak, G. Frenking, and A. Korkin, J. Phys. Chem. A 104, 1186 \u00012000\u0002.""]" diff --git a/README.md b/README.md new file mode 100644 index 0000000000000000000000000000000000000000..bd37343295c9f130846879432df63e918d2e0123 --- /dev/null +++ b/README.md @@ -0,0 +1,133 @@ +# Tabulus-Gold + +**Tabulus-Gold** provides gold-standard data for evaluating the output quality of the seven-Step [Tabulus](https://github.com/sciknoworg/tabulus) pipeline for reference-aware scientific review-table digitization. + +**Software:** [https://github.com/sciknoworg/tabulus](https://github.com/sciknoworg/tabulus) +**Documentation:** [https://tabulus.readthedocs.io/en/latest/](https://tabulus.readthedocs.io/en/latest/) + +The release contains controlled gold data for two review papers from the **atomic layer deposition (ALD)** literature: + +- **Miikkulainen et al. (2013)** — *Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends*. *Journal of Applied Physics*, 113(2). DOI: [10.1063/1.4757907](https://doi.org/10.1063/1.4757907) +- **Puurunen (2005)** — *Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process*. *Journal of Applied Physics*, 97(12), 121301. DOI: [10.1063/1.1940727](https://doi.org/10.1063/1.1940727) + +The data are organized by paper and pipeline Step. Each Step directory contains the authoritative target data—or, for deterministic downstream processing, the expected derived output—against which Tabulus predictions can be evaluated. + +## What is Tabulus? + +[Tabulus](https://github.com/sciknoworg/tabulus) is a modular framework for +digitizing scientific review tables into structured, citation-aware data. Its +seven-Step workflow covers table localization and reconstruction, identification +of reference-bearing tables, bibliography extraction, citation-to-bibliography +matching, scholarly-reference resolution, and export of resolved structured +tables. + + +## Dataset structure + +```text +tabulus-gold/ +├── README.md +├── Miikkulainen_2013/ +│ ├── README.md +│ ├── step1_table_localization/ +│ ├── step2_table_reconstruction/ +│ ├── step3_reference_table_classification/ +│ ├── step4_bibliography/ +│ ├── step5_reference_matching/ +│ ├── step6_reference_resolution/ +│ └── step7_resolved_tables/ +└── Puurunen_2005/ + ├── README.md + ├── step1_table_localization/ + ├── step2_table_reconstruction/ + ├── step3_reference_table_classification/ + ├── step4_bibliography/ + ├── step5_reference_matching/ + ├── step6_reference_resolution/ + └── step7_resolved_tables/ +``` + +## Gold-standard contracts by pipeline Step + +| Step | Tabulus task | Gold-standard target | +|---|---|---| +| **Step 1 — Table localization** | Identify physical table fragments in the source PDF and preserve the information required to associate fragments belonging to the same logical table. | `gold.json` describes the curated physical table fragments and available localization/continuation metadata. Canonical table-crop images provide the visual table regions used as the controlled input to Step 2. | +| **Step 2 — Table reconstruction** | Convert each canonical table crop into a structured table while preserving its rows, columns, and cell contents. | Each curated physical table has an authoritative `gold.csv` representing the expected reconstructed table. These files define the target table structure and content independently of the reconstruction model or adapter used. | +| **Step 3 — Reference-table classification** | Determine whether a reconstructed table contains an explicit literature-reference column and should therefore continue through the reference-processing branch of Tabulus. | `gold.json` assigns the authoritative reference-table classification to each curated Step 2 table. The gold set contains both positive and negative examples where available. | +| **Step 4 — Bibliography extraction** | Recover the ordered bibliography of the source paper so that table citations can subsequently be linked to bibliography positions. | `gold.json` contains the authoritative ordered bibliography. Bibliography position is important because Step 5 links table citations to these ordered entries. | +| **Step 5 — Reference matching** | Detect citation expressions occurring in reference-bearing table cells and map them to the corresponding positions in the Step 4 bibliography. | `gold.json` records the annotated citation cells and their gold bibliography indices. A cell may link to one or multiple bibliography entries. | +| **Step 6 — Scholarly reference resolution** | Resolve bibliography entries linked from the tables to canonical scholarly identities, such as DOI, title, authors, year, and venue. Resolution is performed once at paper level rather than independently for every table occurrence. | `gold.json` contains source-derived scholarly identities for the controlled resolution set. These records provide the authoritative target metadata for evaluating resolution quality. | +| **Step 7 — Resolved-table export** | Join the reconstructed table content, Step 5 bibliography links, and Step 6 scholarly identities into the final reference-aware structured tables. | The Step 7 `gold.csv` files are **deterministically derived expected outputs**. They combine authoritative upstream gold data and represent the final table content and scholarly-reference fields expected from a correct end-to-end join/export. | + +## Controlled evaluation data + +Across the two papers, Tabulus-Gold contains: + +- **65** curated physical tables +- **57** tables with explicit reference columns +- **8** tables without explicit reference columns +- **2,016** annotated citation cells +- **5,963** citation-to-bibliography links +- **3,596** ordered bibliography entries +- **3,276** source-derived Step 6 scholarly-reference records +- **57** Step 7 resolved physical-table gold CSVs + +These counts correspond to different parts of the seven-Step evaluation workflow and therefore do not share a single common evaluation denominator. + +For example, Step 3 is evaluated over both reference-bearing and non-reference-bearing curated tables, whereas Steps 5 and 7 operate on the reference-bearing subset. + +## Relationship to Tabulus-Runs + +**Tabulus-Gold** contains the authoritative annotations and expected outputs used +for controlled quality evaluation. + +The separate **Tabulus-Runs** release contains recorded experimental outputs from +the ALD and area-selective deposition (ASD) experiments used in the associated +Tabulus study. + +Keeping the two resources separate distinguishes the evaluation targets from the +system outputs being evaluated. + +## Citation + +When using **Tabulus-Gold**, please cite the Zenodo dataset record. The final +dataset DOI and recommended citation will be added here when the record is +published. + +If you use the **Tabulus software**, please also cite the software repository: + +```bibtex +@software{tabulus, + author = {D'Souza, Jennifer and Rumleanschi, Vladimir}, + title = {Tabulus: End-to-End Scientific Review Table Digitization Pipeline}, + url = {https://github.com/sciknoworg/tabulus}, + year = {2026} +} +``` + +Tabulus was first developed in the following master's thesis: + +```bibtex +@mastersthesis{rumleanschi2026tabulus, + author = {Rumleanschi, Vladimir}, + title = {Tabulus: AI-Assisted Tabular Knowledge Extraction and Semantic Integration Framework for Scientific Literature}, + year = {2026}, + doi = {10.15488/21618}, + url = {https://doi.org/10.15488/21618} +} +``` + +## License + +The original annotations, structured gold-standard data, and other dataset +content created for **Tabulus-Gold** are licensed under the +[Creative Commons Attribution-ShareAlike 4.0 International License (CC BY-SA 4.0)](https://creativecommons.org/licenses/by-sa/4.0/). + +You are free to share and adapt these materials for any purpose, provided that +appropriate credit is given to the creators and that any adapted material is +distributed under the same or a compatible license. + +Third-party material derived from the source publications, including any table +images or table crops, is not covered by this license unless explicitly stated +otherwise. Copyright and reuse rights for such material remain with the +respective copyright holders.