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" 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
I QS22
8
AS /B  Dat as heet  
 
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1
 
Marc h 2022
 
IQ S228A
S
/B D AT ASHEET
 
Single channel capacit ive pr oxim it y 
 
and t ouch cont r oller
 
The Pr oxSense
®
 
IQ S228A S/ B
 
is a single channel self
-
capacit ive sensor wit h Dynam ic Calibrat ion 

Feature s
 
>
 
1 Self  capacit ive channel
 
>
 
>
 
Pr oxim it y and Touch output s
 
>
 
Autom at ic Tuning
 
>
 
I nter nal Refer ence Capacit or
 
>
 
M inim um exter nal com ponent s 
 
>
 
1
-
Wire dat a str eam ing 
 
>
 
I
2
C Debug opt ion
 
>
 
User selectable opt ions (O TP):
 
>
 
Ext  sync cont r olor Ext f ilt er contr ol
 
>
 
I /O  Sink or  Sour ce selection
 
>
 
Tim e
-
out f or st uck key
 
>
 
Pr oxim it y and Touc
h sensit ivit y selections
 
>
 
Low Power
 
m odes
 
>
 
Low powerm ode 2. 5

A 
 
>
 
Supply volt age: 1.8V t o 3. 6V 
 
Applicati ons
 
>
 
Pr oxim it y sensors
 
>
 
SAR det ectionf or  Tablets
 
>
 
On
-
ear  det ection f or m obile phones
 
>
 
3D glasses
 
>
 
Personal M edia Player s
 
>
 
Whit e goods and appliances
 
>
 
HumanI nter f ace Devices
 
>
 
Pr oxim it y activat ed backlight ing
 
Ava il a ble  O ptions
 
T
A
 
T SO T 23
-
6
 
WL CS P
-
8
 
DF N
-
6
 
-
20
°
C t o 85
°
C
 
I Q S228AS
 
-
 
-
 
-
40
°
C t o 85
°
C
 
I Q S228B
 
I Q S228B
 
I Q S228B
 
R oH S2
 
Com pl i ant
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Contents
 
I QS 22 8AS /B DA TAS HE E T
 
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.....................
 
1
 
1 OVE RV IE W
 
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5
 
1.1
 
D
E V I CE
 
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......................
 
5
 
1.2
 
O
P E RATI ON
 
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................
 
5
 
1.3
 
A
P P LI CA BI LITY
 
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............
 
5
 
2 PACKA GIN G A ND P IN
-
OU T
 
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...............
 
6
 
2.1
 
IQ S2 28 AS/ B
 
................................
................................
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................................
.............
 
6
 
2.1.1  P in
-
ou t TSOT 2 3
-
6
 
................................
................................
................................
.............................
 
6
 
2.1.2  P in
-
ou
t W LC SP
-
8
 
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................................
..............................
 
7
 
2.1.3  P in
-
ou t DFN
-
6
 
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................................
....
 
8
 
2.2
 
S
CHE MA TI C
 
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................
 
9
 
2.2.1  TSO T 23
-
6
 
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9
 
2.2.2  W LCS P
-
8
 
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.........
10
 
2.2.3  DF N
-
6
 
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11
 
3 U S E R CON FI GURA BLE  OPT IONS
 
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.....
 
12
 
3.1
 
C
ONFI GURI NG 
D
EV I CE S
 
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............................
 
12
 
3.1.1  IQ S2 28 AS/ B Us er 
Se lec tab le O pti ons
 
................................
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............................
12
 
4 ME A S URIN G CAPA CI TAN CE US IN G T HE  
C HA RGE T RANS FER
 
ME TH O D
 
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..........
 
15
 
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16
 
6 OPE RA TIN G PR INC IPLE
 
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...................
 
17
 
7 CO NFI GURA BLE  S E TTIN GS
 
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..............
 
17
 
7.1
 
CT RL:
 
E
XTE RNA L 
C
ONTROL
 
................................
................................
................................
.....................
 
17
 
7.1.1  Char g e H alt
 
................................
................................
................................
................................
......
17
 
7.1.2  Ha lt LT A Fi lter
 
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................................
................................
..
17
 
7.1.3  Pu ls e 
o n CTR L:
 
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...............................
17
 
7.2
 
LO G IC
 
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................................
....................
 
18
 
7.3
 
RF
 
N
OI S E ON 
IQ S228AS /B
 
................................
................................
................................
......................
 
18
 
7.3.1  ND: RF  Nois e Det ec ti on
 
................................
................................
................................
..................
18
 
7.3.2
 
IQ S2 28 AS/ B RF  Nois e Im mun ity
................................
................................
................................
.....
18
 
7.4
 
P
ROXI MI TY  
T
HRE S HOLD
 
................................
................................
................................
............................
 
19
 
7.5
 
T
OUCH 
T
HRE S HOLD
 
................................
................................
................................
................................
.
 
19
 
7.6
 
M
ULTI P LI E RS
 
................................
................................
................................
................................
............
 
19
 
7.7
 
C
HA RGE 
T
RA NS FE R
 
................................
................................
................................
................................
.
 
19
 
7.8
 
T
A RGET 
C
OUNTS
 
................................
................................
................................
................................
.....
 
19
 
7.9
 
E
NA B LE  
P
A RTIA L 
AT I
................................
................................
................................
................................
 
19
 
7.10
 
DY CA L
 
T URBO
 
................................
................................
................................
................................
....
 
20
 
7.11
 
F
I LTE R 
H
A LT
 
................................
................................
................................
................................
..........
 
20
 
7.12
 
L
OW 
P
OWE R 
M
ODE S
 
................................
................................
................................
..............................
 
20
 
7.13
 
Z
OOM
 
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................................
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....................
 
20
 
8 S T RE A MIN G M ODE
 
................................
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.........................
 
21
 
8.1
 
E
V E NT 
M
ODE
 
................................
................................
................................
................................
...........
 
22
 
8.2
 
I
2
C
 
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................................
..........................
 
22
 
9 A U TO TU NING IM PLE ME NTAT I
O N (A TI)
 
................................
................................
................................
.........................
 
23
 
9.1
 
F
ULL 
AT I
 
................................
................................
................................
................................
.................
 
23
 
9.2
 
AT I
 
T
A RGET
 
................................
................................
................................
................................
.............
 
23
 
9.3
 
AT I
BAS E
:
 
S
I GNI FI CA NCE OF 
AT I
 
B
A SE
 
................................
................................
................................
........
 
23
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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9.4
 
S
E NS I TIV I TY  
D
UE  TO 
AT I
 
................................
................................
................................
..........................
 
23
 
9.5
 
AT I
 
P
ROCE DURE
 
................................
................................
................................
................................
......
 
23
 
1 0 DY CA L S PE C IFI C S E TTI NGS
 
................................
................................
................................
................................
............
 
25
 
10.1
 
R
E LE A SE  
T
HRES HOLD
 
................................
................................
................................
............................
 
25
 
10.2
 
I
NP UT
 
E
NA B LE
 
................................
................................
................................
................................
........
 
25
 
1 1 E LE CTR ICA L S PE CIF I CA TI ONS
 
................................
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................................
................................
........
 
26
 
11.1
 
A
B S OLUTE  
M
A XIMUM 
S
PE CI FI CA TI ONS
 
................................
................................
................................
....
 
26
 
11.2
 
G
E NE RA L 
C
HA RA CTE RI STI CS
 
................................
................................
................................
..................
 
26
 
11.3
 
O
UTP UT 
C
HA RA CTE RIS TI CS
 
................................
................................
................................
....................
 
27
 
11.4
 
P
A CK A GI NG 
I
NFORMA TION
 
................................
................................
................................
......................
 
28
 
11.4. 1 TSO T 2 3
-
6
 
................................
................................
................................
................................
......
28
 
11.4. 2 WLC SP
-
8
 
................................
................................
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................................
.......
29
 
11.4. 3 DFN
-
6
 
................................
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............
30
 
11.4. 4 M SL Lev e l
 
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......
31
 
1 2 DATAS HE E T A ND PART
-
NU M BE R INF OR MATI ON
 
................................
................................
................................
.........
 
32
 
12.1
 
O
RDE RI NG 
I
NFORMATI ON
 
................................
................................
................................
........................
 
32
 
12.2
 
D
EV
I CE  
M
A RK I NG 

T
OP
 
................................
................................
................................
.........................
 
33
 
12.2. 1 TSO T 2 3
-
6 Pac k age  Mar k ings
 
................................
................................
................................
.......
33
 
12.2. 2 WLC SP
-
8 Pac k ag e Mar k ings
 
................................
................................
................................
........
34
 
12
.2. 3 DFN
-
6 Pac k ag e M ark ings
 
................................
................................
................................
.............
34
 
12.3
 
T
A P E A ND 
R
EE L 
S
PE CI FICA TI ON
 
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..............
 
35
 
A P PE ND IX  A . ME M OR Y MAP
 
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................................
.............
 
36
 
A P PE ND IX  B . E RRA TA
 
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40
 
F
I LTE R 
H
A LT 
T
I
MES
 
................................
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................................
................................
........
 
40
 
A P PE ND IX  C . C ONTA CT I NF ORMA TI ON
 
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41
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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List of Ab brevi ation s
 
ATI
 
Autom at ic TuningI m plem ent at ion
 
BP
 
Boost  Power M ode
 
CS
 
Counts( Number of  Charge Transf ers)
 
C
s
 
I nter nal Refer ence 
Capacit or
 
DYCAL
TM
 
Dynam ic Calibrat ion
 
EM I
 
Electr omagnet icI nter f erence
 
ESD
 
Electr o
-
St atic Dischar ge
 
FTB/ EFT
 
( Electr ical) Fast Transient  Burst s
 
G ND
 
G r ound
 
HC
 
Halt  Char ge
 
LP
 
Low PowerM ode
 
LTA
 
Long Term  Aver age
 
ND
 
Noise Det ect
 
THR
 
Thr eshold
 
TM
 
Touch M ode
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1
 
Overvi ew
 
1 .1
 
Dev ice  
 
The 
I Q S228AS/ B 
is a single channel 
capacit ive proxim it y and t ouch device which 
employs an inter nal volt age r egulator and 
r efer ence capacit or ( C
s
).
 
The IQ S228AS/ B device has a dedicat ed 
pin(s)
 
f or  t he connect ion of a sense 
electr ode(s)  ( Cx)  and out put  pin(s)  f or 
proxim it y and t ouch event s on O UT. The 
polarityoft heoutput pinscanbeconf igur ed. A 
1
-
wir e open drain dat a str eam ing pr otocol O R 
I
2
C inter f ace is im plement ed f or  debugging 
pur poses.
 
Special device conf igur at ion can be done by 
sett ingonet im epr ogr amm able(O TP)opt ions. 
 
The device aut om atically t r acks slow varying 
envir onm ent al changes via var ious signal 
processing algor it hm s and has an Autom atic 
Tuning Im plement ation ( ATI ) algor it h
m t o 
calibrat et he device t o t he sense elect r ode.  
 
f orm of hyst er esis t hat can t r ack slow var ying 
envir onm ent al change even while t he sensor 
is in a t ouch st at e. This is ideal f or port able 
applications.
 
The 
char ge 
t r ansf er
 
method of  capacit ive 
sensingisemployedontheIQ S228AS/ B.( The 
char ge t r ansf er pr inciple is t hor oughly 
descr ibed in t he applicat ion not e:  

-
 
1 .2
 
Ope ra tion
 
The device has been designed t o be used in 
applications wher e proxim it y is r equir ed and 
t ouch condit ions can prevail f or an extended 
per iod of t im e which m ay r esult  in 
uncompensat ed dr if t in convent ional 
capacit ive sensor s. 
 
Alowt hresholdisusedtodet e
ct t hepr oxim it y 
of an obj ect,  wit h a higher t hreshold f or  t ouch 
det ection. 
 
Dynam ic Calibrat ion is perf orm ed when a 
TOUCH condit ion is detected f or  longer  t han 
t
DY CA L
. Thehyst er esisalgor it hmwillnowcheck 
f ort her eleasecondit ionoft het ouch,whiles
t ill 
t r acking envir onm ent al changes
 
1 .3
 
Applic a bili ty
 
All
 
specif ications, except wher e specif ically 
m ent ioned ot her wise, provided by t his 
dat asheet
 
are applicable t o t he f ollowing 
r anges:
 
>
 
Tem per at ure:
 
I Q S228AS: 
 
-
20
°
Ct o+85
°
C
 
I Q S228B:  
 
-
40°Ct o+85°C
 
>
 
Supply volt age( V
DDHI
) :  1.8V t o 3. 6V
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2
 
Packag ing
 
an d Pin
-
Out
 
TheIQ S228AS/ BisavailableinaTSO T23
-
6package.
 
t heIQ S228BisavailableinTSO T23
-
6
, DFN
-
6
 
or WLCSP
-
8
 
package
 
2 .1
 
IQ S 2 28 AS/ B
 
2 .1 .1
 
P in
-
out
 
T S OT2 3
-
6
 
Fi g u re 
2
.
1
:
Pi n
-
ou t o f I QS2 2 8 AS/B i n  t he  T SOT23
-
6  pa ck a g e.
 
Ta b l e 
2
.
1
: 
Pi n
-
ou t de sc ri p ti o n
 
IQ S22 8AS /B in T SO T 23
-
6
 
Pi n
 
Nam e
 
Ty p e
 
Fu n c ti o n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o rp ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  ca p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .1 .2
 
P in
-
out WLCS P
-
8
 
Ta b l e 
2
.
2
 
8 
-
pi n  W L CSP Pi n
-
ou t Desc ri pti o n
 
IQ S2
2 8B
 
8
-
p in WL C SP
 
Pin
 
Nam e
 
Ty pe
 
Fu nc tio n
 
1
 
Cx
 
Se n s e e l ec trod e
 
Con n e ct to c o nd uc tiv e  a re a  in te n d e d f o r 
s e ns o r
 
2
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
3
 
VREG
 
Reg u l a to r ou tp u t
 
Req u i res  ex te rn a l c a pa c ito r
 
4
 
VSS
 
Si g n a l GND
 
5
 
INPUT
 
Dig i tal  I n pu t
 
Fl o a ti n g i n pu t d u ri n g ru n ti m e. 
 
Rec o mm en d e d: Con ne c tto  
POUT
 
6
 
POUT 
/ ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
7
 
VDDHI
 
Su p p ly  I np u t 
 
Su p p ly  Vo lta g e I n pu t
 
8
 
PGM
 
Con fi g u ra tio n  pi n
 
Con n e cti on  f o r OTPp ro g ramm i n g. Flo a tin g  in p u t d u ri n g  
ru n tim e . 
 
Rec o mm en d e d: Con ne c tto  
OUT
 
p i n . Pro g ram mi n g c a n 
s ti ll  b e p e rfo rm ed  us i ng  t hi s  pin , p rov i de d  a d i od e  is  
u s e d. (Se e  AZD0 2 6  

Con fi g ura ti o n T o ol s  Ove rvi e w)
 
IQ S228
 
1
 
2
 
3
 
4
 
8
 
7
 
6
 
5
 
Fi g u re 
2
.
2
 
IQS2 2 8 B8
-
p i n W LCSP
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .1 .3
 
P in
-
out
 
DFN
-
6 
 
Fi g u re 
2
.
3
: Pi n
-
o u t of IQS2 2
8B
 
i n  DFN
-
6 p a ck a ge .
 
Ta b l e 
2
.
3
:Pi n
-
ou t de sc ri p ti o n .
 
IQ S22 8
B
 
6
-
p in DF N
 
Pin
 
Name
 
T ype
 
F u n ctio n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  
c a p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2
 
S c he ma tic
 
2 .2 .1
 
T S OT2 3
-
6
 
Fi g u re 
2
.
4
: 
Typ i ca l  ap p li ca ti on re fe re nc e s ch e ma tic  o fIQS2 28 AS/B. C2 &C3 are  op ti on a l for a d d ed  RF i mmu n i ty .
 
Fi g u re 
2
.
5
: 
IQS2 2 8 AS/Bo u tp ut p i n c o nfi gu ra tio n
 
fo r I 2 C de bu g  o pe ra tio n ,o r d riv in g  L EDs  (a c tiv e h i g h o r lo w o p ti o n  
a v a il a bl e ).
 
Where a syst em  level ESD st r ike is f ound t o cause t he I C t o go int o ESD induced latch
-
up, it  is 
suggest edt hatt hesupplycurr ent t ot heI Q S228ICislim it edbym eansof ase
r iesr esist or t hat could 
lim it  t he m axim um supply curr ent t ot heI C t o <80m A.
 
Ref e r t o  AZD0 0 8 fo r 
to u ch  k ey  de si g n
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2 .2
 
WLCS P
-
8
 
Fi g u re 
2
.
6
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
WL CSP
-
8  Pac k ag e
. C2 &C3 a re  o pti on a l  fo r ad d e d RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2 .3
 
DFN
-
6
 
Fi g u re 
2
.
7
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
DFN
-
6  Pa ck a ge
. C2 &C3a re  o p ti o n al  f o ra d de d  RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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3
 
User Co nfigur able Options
 
This section list
s t he user  conf igur able 
sett ings.
 
The
 
deviceisf ullyf unct ionalinit sdef aultst at e, 
but  som e applications may r equir e alt ernat ive 
conf igur ation sett ings.  These sett ings are 
enabled by conf igur ing O ne Tim e 
Pr ogr amm able( O TP)  user opt ions.
 
Conf igur ation c
an be done on packaged 
devices or in
-
cir cuit.  I n
-
cir cuit conf igur at ion 
m ay be lim it ed by values of ext ernal 
components chosen.
 
Popular conf igur at ions ar e available ex
-
st ock 

please check wit h t he local dist r ibutor f or 
availabil it y.  Azoteq can supply pre
-
c
onf igur ed 
devices f or  large quant it ies. 
 
3 .1
 
Configuri ng Dev ic es
 
Azoteqof f er saConf igurationTool( CT210/ 20) 
and accom panying software ( USBPr og. exe) 
t hat can be used t o progr am t he O TP user 
opt ions f or  pr otot yping purposes. M or e det ails 
r egarding t he conf igur at ion of t he device wit h 
t he USBPr og progr am  is explained by
 
application not e: 

AZD007 

USBPr og 
O verview

which can be f ound on t he Azot eq 
websit e. 
 
Alt ernat ive pr ogr am m ing solutions f or  t he 
I Q S228AS/ B also exist . For  f ur t her  enquir ies 
r egarding t his, please cont act  Azot eq at 
Pr oxSenseSuppor t @azot eq. com or t he loc
al 
dist r ibut or
 
3 .1 .1
 
IQ S 2 28 AS/ B Use r Se le c table O ptions
 
Ta b l e 
3
.
1
: 
IQS2 2 8 AS/B Ba nk 0  Us e r Se l ec ta bl e  Opti o ns  (0xC4H)
 
Bi t
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Name
 
I N_EN
 
REL
T HR
 
LOGI C
 
T
T HR 2
 
T
T HR 1
 
T
T HR 0
 
P
T HR 1
 
P
T HR 0
 
bi t 7
 
I N_E N: 
I nput E nable
 
S ect ion 
10. 2
 
0 = Out put  (P rox imi ty )
 
1 = I nput
 
bi t 6
 
RE L
T HR
: 
Releas e Thres hold
 
S ect ion 
10. 1
 
0 = 75%
 
1 = 87%
 
bi t 5
 
LOGIC:
 
Out put logics elect  (Only when S TREA MI NGmode is  
dis abled) 
 
S ect ion 
7. 2
 
0 = S of t ware Open Drain Act iv e Low
 
1 = Act iv e High
 
bi t 4
-
2
 
T
T HR
:
 
Touc h Thres holdS elect ions
 
S ect ion 
7. 5
 
000 = 72/ 256
 
001 = 4/ 256
 
010 = 8/ 256
 
011 = 24/ 256
 
100 = 48/ 256
 
101 = 96/ 256
 
110 = 128/ 256
 
111 = 160/ 256
 
bi t 1
-
0
 
P
T HR
: 
P rox imi ty Thres hold S elec t ions  
 
S ect ion
 
7. 4
 
00 = 4
 
01 = 2
 
10 = 8
 
11 = 16
 
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Ta b l e 
3
.
2
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Fu l l  ATI (0x C5H)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
Not used
 
Bank1: bi t 3
 
T URBO:
 
DY CA LTURB O
 
S ect ion 
7. 10
 
0 = Dis abled
 
1 = E nabled
 
Bank1: bi t 2
-
0
 
BAS E : 
B as e V alue 
 
S ect ion 
9. 3
 
000 = 200
 
001 = 50 
 
010 = 75
 
011 = 100
 
100 = 150
 
101 = 250 
 
110 = 300
 
111 = 500 
 
Ta b l e 
3
.
3
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Pa rti a l AT I
 
t
HA LT 1
 
t
HA LT 0
 
M ULT
S E NS E 1
 
M ULT
S E NS E 0
 
M ULT
COMP 3
 
M ULT
COMP 2
 
M ULT
COMP 1
 
M ULT
COMP 0
 
bit  7
 
bit  0
 
Bank1:7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
MULT
: Mult iplier f orS ens it iv ity
 
S ect ion 
7. 6
 
00
 
01
 
10
 
11
 
Bank1: bi t 3
-
0
 
MULT: Mult iplierf or Compens at ion
 
S ect ion 
7. 6
 
0000 t o 1111
 
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®
 
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Ta b l e 
3
.
4
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  2  (0x C6H)
 
STREAM
 
TRANS
 
CO MM S
 
ND
 
Tar get
 
ATI
 
LP
1
 
LP
0
 
bit  7
 
bit  0
 
Bank2: bi t 7
 
ST RE AM: 
St eami ng Met hod 
 
S ect ion 
8. 2
 
0 = 1
-
wire
 
1 = 2
-
wire (I
2
C)
 
Bank2: bi t 6
 
T RANS : 
Charge Trans f er Frequenc y 
 
S ect ion 
7. 7
 
0 = 512k Hz
 
1 = 250k Hz
 
Bank2: bi t 5
 
COMM S :
 
St reami ng
 
S ect ion 
8
 
0 = Dis abled
 
1 = E nabled
 
Bank2: bi t 4
 
ND:
 
Nois e Det ec t
 
S ect ion 
7. 3
 
0 = Dis abled
 
1 = E nabled (1
-
wire c omms  only )
 
Bank2: bi t 3
 
T arget:
 
A TI t arget c ounts
 
S ect ion 
7. 8
 
0 = 1200
 
1 = 1024
 
Bank2: bi t 2
 
ATI
: A TI S elec t ion
 
S ect ion 
7. 9
 
0 = Full 
 
1 = P art ial
 
Bank2: bi t 1
-
0
 
LP
: P owermode S elect ion
 
S ect ion 
7. 12
 
00 = BP , 9ms  (64ms if z oom is disabled) 
 
01 = NP,  128ms
 
10 = LP 1,  256ms
 
11 = LP 2,  512ms
 
Ta b l e 
3
.
5
: 
Us e r Se l ec ta bl e  
Con fi g u ra ti on  Opt io n s: Ba nk  3  (0x C7H)
 
~
 
~
 
~
 
~
 
Zoom
 
~
 
~
 
CTRL
 
bit  7
 
bit  0
 
Bank3: bi t 7
-
4
 
S ystem  Use
 
Bank3: bi t 3
 
Zoom : 
Zoom Dis able
 
S ect ion 
7. 13
 
0 = ZoomE nabled
 
1 = Zoom Dis abled
 
Bank3: bi t 2
-
1
 
S ystem  Use
 
Bank3: bi t 0
 
CT RL: 
Cont rolI nput  
 
S ect ion 
7. 1
 
0 = Halt Charge
 
1 = Filt er Halt
 
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4
 
Measuri ng 
C
a pacit ance 
U
sing th e 
Cha rge Tran sfer
 
M
etho d
 
The 
char ge 
t r ansf er
 
m ethod of  capacit ive 
sensing is em ployed onthe IQ S228AS/ B.
 
A char ge cycle is used to t ake a m easur em ent 
of t he capacit ance of t he sense elect r ode 
( connect ed t o Cx) r elative t o ground. It consist s 
of a ser ies of pulses char ging Cx and 
dischar ging 
Cxt ot her eferencecapacit or , at t he 
char get r ansf erf r equency( F
CX
 
-
 
r ef ert oSection 
11
) . Thenum ber of t hepulsesr equir edt or each 
a t r ip volt a
ge on t he refer ence capacit or is 
r efer r edt oast he 
Count  
value( CS) whichist he 
instant aneous capacit ive m easur ement . The 
Counts ( CS)  ar e used to det er m ine if  eit her a 
physical cont act  or proxim it y event  occurr ed, 
based on t he change in CS det ect ed. The 
t ypical values of CS, wit hout a t ouch or  
proxim it y condit ion r ange bet ween 1344 and 
1865 counts,  although higher and lower counts 
can be used based on t he application 
r equir ement s.  With CS larger t han +/
-
1865 t he 
gain of t he syst em  may become t oo high 
caus
ing unst eady oper ation.
 
The I Q S228AS/ B schedules a char ge cycle 
ever y t
SA MP LE
 
seconds t o ensure r egular 
samples f or  pr ocessing of r esult s.  The dur at ion 
of t he char ge cycle is def ined as t
CH A RGE
 
and 
variesaccordingt ot hecountsr equir edt or each 
t he tr ip 
volt age.  Following t he char ge cycle 
other activit ies such as dat a st r eam ing is 
completed ( if  in str eam ing m ode) ,  bef ore t he 
next  char gecycle is init iat ed.
 
Pl easenot e: A tt achingaprobet ot heCxpi n 
w il l i ncrease t he capacit ance of t he sense 
plat e and t h
eref ore C
S
.  T his may have an 
i mmediat e i nf l uence on t he Counts val ue 
( decrease t
CH AR GE
) and cause a proximit y or 
t ouchevent .
 
Af t er t
HA LT
 
secondst hesyst em will 
adj ust t o accomm odate f or t his change. I f t he 
t otal load on Cx,  wit h t he probe at t ached is st ill 
lowert hant hem aximumCxloadt hesyst emwill 
cont inuet of unct ionnor mallyaft ert
HA LT
 
seconds 
wit h t he probe att ached.
 
Fi g u re 
4
.
1
: 
Cha rge  cy cl e s a s ca n  b e s ee n  on  CX.
 
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Fi g u re 
5
.
1
: 
DYCAL  Ope ra ti o n (Se l f Capa c iti ve  Se ns in g )
 
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6
 
Operatin g Prin ciple
 
Figur e 5.1 is a visual r epr esent ation of  t he 
DYCAL f unct ionalit y. The O UT pin is used t o 
indicate t he st atus of a DYCAL event  ( bot h 
proxim it y a
nd a t ouch event) . The DYCAL 
f unct ionalit y is sum m ar ised below.  
 
Non
-
T ouch M ode
 
The O UT pin is act ivated on t he successf ul 
det ection of a pr oxim ity event and will r emain 
activat edf ort hedur ationoft heproxim it yevent , 
per m itt ing t hat  t his event is no lo
nger t han t he 
f ilt er halt  t im ings.  The LTA will be halt ed in t his 
t im e.
 
Assoonasat ouchcondit ionisdet ect ed( Count 
values, orCS, f allbelowT
T HR
) , t hecont r ollerwill 
dynamically r e
-
calibrat e it s LTA t o t he halted 
LTA 

T
T HR
.  The I C is now in TouchM ode. 
 
T ouch M ode
 
Af t er t he re
-
calibrat ion of t he LTA, it will f ollow 
t he Count s ( CS) and be allowed t o t r ack slow 
varying envir onm ent al changes. I f t he Counts 
( CS)  were t o exceed t he LTA by t he r elease 
t hreshold ( REL_T
T HR
) t he tou
ch det ect ion will  
st op and t he O UT pin will r etur n t o it s or iginal  
st ate.
 
7
 
Configur able S ettin gs 
 
This section descr ibes t he user  conf igur able 
opt ions oft heI Q S228AS/ B inm ore det ail. 
 
User progr amm able options are selected by 
conf igur ing t he O TP select ion
s. Please r ef er t o 
Section 
2.2. 2
 
f oranover viewoft heconf igur able 
sett ings.
 
7 .1
 
CT RL: Ex ternal Control
 
T he user has t he opt ion t o cont rol some  
parame
t ers of  t he I Q S228AS/B f rom an 
ext ernalsource. T heI Ccanbeusedindef au lt  
mode (CTRL unc onn ect ed) or t he user ca n  
use t he CT RL pin t o select  whet her t he 
mast er should halt  t he charge t ransf ers (i.e.  
st opoperat ion)ort ohal t LT A
 
f ilt ert rackingon  
t he
 
I Q S228AS/B.
 
7 .1 .1
 
Cha rge  Ha lt
 
I f  CT RL is sampled high f or lon ger t han  
T
EXT _H ALT,  
t he charge co nversion cycle w ill be  
halt ed,  once t h e current  conversion has be en  
complet ed.  T he devic e will rema in in t hi s  
st andby mode unt il t he CT RL line is sampled  
low 
aga in.  An aut omat ic reseed is perf ormed  
direct lyaf t erCT RLisreleasedt ocompensat e  
f or any enviro nment al changes w hich mi ght  
have occurred d uring t h e st andby mode.
 
7 .1 .2
 
Hal t LT A 
F
il te r
 
W hen conf igured in t his  mode,  CT RL can be 
used t o cont rol t he LT A halt  t i
mes when  
sampledhig h. T heCT RLpinhasprecedence  
over t he conf ig urat io ns bit s select ed f or t h e  
halt  t imings.
 
I f  CTRL is sam pled high f or longer  t han 
T
E X T _HA LT
,  t he f ilt er will be halt ed unt il t his pin is 
sampled low.
 
.
 
Fi g u re 
7
.
1
: 
Ma s te r Out p u t s ig na l  o n CTRL  p in  t o  Ha l t Op era tio n  o r Fi l te r Ha l t
 
7 .1 .3
 
P uls e  on CT RL:
 
T he pulse on t he CT RL pin needs t o adher e  
t o t he f ollowing t imin g const r
aint s:
 
25ms  <  T
PULSE 
<  35ms
 
7.1. 3. 1
 
I Q S228A S/ B:  Reseed
 
A reseed co ndit io n can be init iat e d by  
generat i ngap ulseo nt heCT RLpin. T heLT A  
will b e reset  t o t he coun t ,  f orcing t he O UT  pin 
t o it s original st at e.  
 
I f  t he count  value is out side it s allow abl e  
limits,  t he device will f orce an AT I  event  t o 
reset  t he syst em sensitivit y.  (Please ref er t o 
sect ion 
8. 1
 
f or more det ail).
 
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7.1. 3. 2
 
I Q S228A S/ B:  re
-
AT I
 
Ar e
-
ATIcondit ioncanbeinit iatedbygener at ing 
a pulse on t he CTRL pin. This f unct ion can be 
issued at anyt im e.
 
Fi g u re 
7
.
2
: 
Ma s te r Out p u t s ig na l  o n CTRL  t o fo rce  a  Res e ed Con d i ti o n
.
 
7 .2
 
LOG IC 
 
Thelogicusedbyt hedevicecanbeselectedas 
active HIG H or act ive LOW.  The out put  pins 
O UT and CTRL will f unct ion based on t his 
selec
t ion.  When conf igured as Act ive High, t he 
out put swillr emainhighaft er PO Runt ilATIhas 
completed.  The ATI t im e will vary accor ding t o 
t he capacit ive load on t he sensor,  but  t ypically 
does not exceed 500ms.
 
Co n f igu ratio n :  
Bank0
 
b it 5 :  Lo g icO u t p u t  
Sele ctio n
 
Bi t
 
Select i on
 
0
 
Soft ware O pen Dr ain Active Low
 
1
 
Act ive High 
 
Asoft war eopendrainout put isim plement edf or 
t he O UT pin when configured in active low 
m ode. The volt age on t he pull
-
up r esist or  is 
lim it ed t o t he 
I Q S228AS/ B supply volt age.  A 
4k7
-

is 
r ecomm ended.
 
7 .3
 
RF Nois e  on I QS 2 28 AS/ B 
 
7 .3 .1
 
ND: RF Nois e  De tec tion
 
The IQ S228AS/ B has RF Noise Detect ( ND) 
f unct ionalit y. I f ND f unct ion is enabled, t he 
I Q S228AS/ B is able t o detect RF Noise 
on t he 
TOUT/ ND pin. Furt her details on t he wor king of 
t his can be f ound in the Application Not es: 
AZD015 and AZD015b. 
 
Note:  ND input enable is a legacy input and is 
not  r ecomm ended f or  use in new designs. The 
input has been desensitized by def ault and 
is 
not t estedt otr iggerataspecif icRFinputpower 
level
 
7 .3 .2
 
IQ S 2 28 AS/ B RF Noise  I mmunity
 
TheI Q S228AS/ Bhasadvancedim m unit yt oRF 
noisesour cessuchasGSM cellulart elephones, 
DECT, Bluet oot h and WI FI  devices. Design 
guidelines should however be f ollowe
d t o 
ensure t he best noise im m unity.  The design of 
capacit ivesensingapplicationscanencom pass 
alarger angeof sit uat ionsbut asasum m ar yt he 
f ollowing should be not ed t o im prove a design:
 
>
 
Aground pla nesh oul db eplac edu ndert h e  
I C,  except  under t he 
Cx line.
 
>
 
All t he t racks on t he PCB must be kept as 
short  as possible.  
 
>
 
T he capacit or bet we en  VDDHI  and G ND  
as well as bet ween VR EG and G ND,  must  
be place d as close as p ossible t o t he I C.
 
>
 
A 100 pF capacit or should be place d in  
parall el wit h t he 1uF  capacit o
r bet wee n  
VDDHI andVSS.Anot her100pF capacit or  
can be p laced in par allel wit h t he 1 uF  
capacit or bet we en VRE G  and G ND.
 
>
 
I f  t he device is t oo sensit ive f or a specif ic  
orderopt ion,
 
aparas it iccapacit or(
t ypicall y
 
20pF ) can be added b et ween t he Cx line  
and
 
grou nd.
 
>
 
Proper sense elect rod e  and but t on desig n  
princip les must  be f ollo wed.
 
>
 
Unint ent i onal co upl ing of  sense elect rod e  
t o ground an d ot her  circuit ry must  be 
limited by increasin g t he dist ance t o t hese 
sources.
 
I n som e inst ances a ground plane som e 
dist an
ce fr om t he device and sense electr ode 
m ay provide signif icant  shielding f r om 
undesir ed inter f er ence. 
 
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When t he capacit ance bet ween t he sense 
electr ode and ground becom es t oo lar ge the 
sensit ivit y of t he devicem ay be influenced.
 
7 .4
 
P rox imi ty 
T hre s hold
 
T he 
I Q S228AS/ B
 
has 4 proximity t hreshol d  
set t ings indicat e d in c ount s.  T he proximity 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired sensit ivit y and noise immunit y.  A 
proximityevent ist rigge redif t heCount s(CS) 
diverges more t han 
t h e select ed t hreshol d  
f rom t he LT Af or 6 consecut ive cycles.
 
Conf i gurat i on:  
Bank0
 
bi t 1
-
0 
P
T HR 1
:P
T HR 0
: Proximi t yThresholds
 
Bi t
 
Select i on
 
00 
 
4
 
01 
 
2
 
( M ost sensit ive)
 
10 
 
8
 
11 
 
16
 
( Least sensit ive)
 
7 .5
 
T ouchT hre s hold
 
T he 
I Q S228AS/B has 8 t ouch t hreshol d  
set t ings indicat ed i n  count s.  T he t ouch 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired t ouch se nsit ivit y.  A t ouch event  is 
t riggered if  t he Count s  (CS) diverges more 
t han t he select ed t hres hold f rom t he LT A f or
 
2 consecut ive cycles
. 
 
I nt heNO
-
T O UCHst at et heCount s(CS)must  
diverge mor e t han t he t ouch t hresho ld val ue  
below
 
t he LT A. O perat ing in t he T O UCH  
ST AT E,  t he CS must diverge more t han 
REL_T
T HR
 
of  t he t ouch threshol d valu e 
abov e
 
t he LT A
.
 
The f ollowing equ
ation is used t o det erm ine if  a 
t ouch or r elease event  occurr ed.
 
NO  TO UCH STATE:
 
LTA
 
CS<=
 
T
T HR
 
TOUCH STATE:
 
CS 
-
 
LTA
 
>=
 
REL_T
T HR
 
Conf i gurat i on:  
Bank0
 
bi t 4
-
2T
T HR 2
:T
T HR 0
 
T ouchT hreshol ds 
 
T
T HR 2
:T
T HR 0
: 
Touch Thr esholds 
 
Bi t
 
Select i on
 
000 
 
72/ 256
 
001 
 
4/256( M ost sensit ive)
 
010 
 
8/256
 
011 
 
24/ 256 
 
100 
 
48/ 256
 
101 
 
96/ 256
 
110 
 
128/256
 
111 
 
160/256( Least sensit ive)
 
7 .6
 
Multipli e rs
 
Whenusingpar t ialATI,thebasevalueissetup 
using t he m ult ipliers.  Com pensat ion will st ill be 
add
ed aut om aticallyt oreach t he t ar get.
 
7 .7
 
Cha rge T ra ns fer
 
The char ge t r ansf er f r equency of t he 
I Q S228AS/ B is adj ustable. Changing t he 
t r ansf er f r equency will aff ect  sensit ivity and 
r esponser ate.  Two opt ions ar e available:
 
Conf i gurat i on:  
Bank2
 
bi t 6
 
T RA NS:
 
Char ge Tr ansf er  Frequency
 
Bi t
 
Select i on
 
0
 
512kHz
 
1
 
250kHz
 
7 .8
 
T a rge t Counts
 
The t arget  oft he ATI algorithm can be adj ust ed 
bet ween1200( def ault )and1024count s. When 
less sensit ivit y is r equir ed, t he lower counts wil
l 
also incr easer esponse rate:
 
Conf i gurat i on
: 
Bank2
 
bi t 3
 
T arget :
 
ATI t ar get counts
 
Bi t
 
Select i on
 
0
 
1200
 
1
 
1024
 
7 .9
 
E na ble P a rtial ATI
 
I n some applications t he st art up t im e of t he 
I Q S228AS/ B m ay be r equir ed t o be decr eased. 
This is 
possible by enabling par t ial ATI,  if  the 
m ult ipliers r equir ed can be det erm ined, and t he 
compensat ion alone is adequate t o account  f or 
envir onm ent al change.
 
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Conf i gurat i on:  
Bank2
 
bi t 2
 
AT I:
 
Par t ial ATI
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enab
led
 
7 .1 0
 
DYCAL T URBO
 
I n som e applications, it m ay be r equir ed t o 
im provet heent ryandexit speedofTouchM ode 
by r em oving t he ent ry r eseed delay, as well as 
t urning of f t he AC
-
f ilt er s. This can be done by 
enabling t he DYCAL TURBO m ode.
 
Conf i gurat i on:  
Bank1
 
bi t 3
 
T URBO:
 
DYCAL TURBO
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enabled
 
Notet hatifDycalTur boisenabled,t heLTAwill  
halt  at t he r eseed point for t
HA LT
 
if Touch M ode 
isent er edbef or eapr oxim it yevent isr egist ered.
 
7 .1 1
 
Filte r Ha lt
 
The 
LTA
 
f ilt
er only executes while no proxim it y 
events ar e det ect ed to ensure com pensat ion 
only f or envir onm ent al changes. O nce a t ouch 
eventisdet ect edt hef ilt erwillr esumeoper ation 
and will no longer  be halt ed.  The halt t im ing 
conf igur ation sett ings determ ine ho
w long t he 
f ilt er is halt ed.
 
Conf i gurat i on:  
Bank1
 
bi t 7
-
6
 
Bi t
 
Select i on
 
00 
 
20 seconds
 
01 
 
40 seconds
 
10 
 
Never
 
11 
 
3 seconds
 
T he presenc e of  a pro ximity condit ion f or a 
t ime exceeding t he halt  t ime will be deemed 
as a f ault  st at e which w ould t rigg er a resee d  
event whereaf t ert heou t put st at eont heO UT 
pin wil l be reset  t o it s original co ndit io n.  
 
7. 12
 
Low P owe r Modes  
 
There exist  4
 
LP m odes.  The LP m odes will  
decr ease t he sam pling fr equency of  CS which 
will r educe t he 
power consumpt ion
 
of  t he 
device. However , t his will also increase t he 
r esponset im e of t he device.
 
Conf i gurat i on:  
Bank2
 
bi t 1
-
0
 
Bi t
 
Select i on
 
00 
 
9.1m s ( BP)  64m s if  Zoom  disabled
 
01 
 
128ms( Norm al Power Mode)
 
10 
 
256ms 
( Low PowerM ode 1)
 
11 
 
512ms( Low PowerM ode 2)
 
7 .1 3
 
Zoom
 
The I Q S228AS/ B has t he opt ion t o disable t he 
zoom f unct ion. Thism eanst hat t hesam plet im e 
will st ay f ixed,  even when proxim ity and t ouch 
events are m ade. When t his is activat ed, boost 
power m ode 
will change fr om a 9m s sample 
t im e, t o 64m s.
 
Conf i gurat i on:  
Bank3
 
bi t 3
 
Zoom:
 
Zoom Disable
 
Bi t
 
Select i on
 
0
 
Enabled 
 
1
 
Disabled
 
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®
 
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®
 
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8
 
Streami ng Mo de
 
F or a more complet e d escript ion of  t he dat a  
st reamingprot ocol, pl ea seref ert oApplicat
ion  
Not e AZ D017 on t he Azot eq websit e.
 
T heIQ S228AS/Bhast hecapabilit yt ost ream 
dat at oaMCU.T hisprovidest hedesignert he  
abilit y t o obt ain t he p a ramet ers and sensor  
dat a wit hin t he device in order t o aid design  
int oappl icat ions. Dat as t reamingis 
perf ormed  
as a 1
-
wire dat a prot ocol on t he O UT  pin O R 
I
2
Cint erf ace.T heout put f unct ionof t hispinis 
t heref orelost whent hedeviceisconf iguredi n  
st reaming mode.  Dat a Str eaming can be  
enab led as ind icat ed be low:
 
Conf i gurat i on:  
Bank2
 
bi t 5: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
Disabled 
 
1 
 
Enabled
 
Figur e 
8
.
1
 
illust rat es t he communicat io n  
prot ocol f or init ialisin g and sending dat a wit h  
t he 1 wire communicat i on prot ocol.  
 
1.
 
Communicat i ons init i at e d by a ST ART 
bit .  Bit  def ined as a lo w condit io n f or  
T
S
T ART
. 
 
2.
 
F ollowi ng t he ST ART  bit , is a 
synchronisat i on byt e (T
INI T
 
= 0xAA).  
T hisbyt eisusedbyt heMCUf orclock 
synchronisat i on.
 
3.
 
F ollowi ng T
I NIT
 
t he dat a byt es will be  
sent .  8 Bytes will be sent  af t er each 
charge cycle.
 
4.
 
Each byt e sent  wi ll be  precede d by 
a 
ST ART  bit  and a ST OP bit  will f oll ow  
every byt e.  
 
5.
 
ST O P bit  indicat ed by  t aking pi n 1  
high.  T he ST O P bit does not  have a 
def ined p eriod.
 
Fi g u re 
8
.
1
: 
D
e b ug : 1
-
wire  strea mi n g  De bu g  Mo d e
.
 
Thef ollowingt abledef inest hebitdef init ionsf or 
t he IQ S228AS/ B devices dur ing Str eam ing 
M ode.
 
IQ  Sw it ch
®
 
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Ta b l e 
8
.
1
: 
By te  De fin i tio n s f o rStre a mi n g  Mo de
 
Byt e (B)
 
Bit
 
Value
 
0
 
AA
 
1
 
7 :0
 
CS Hig h  by te
 
2
 
1 5 :8
 
CS L o w b y te
 
3
 
2 3 :1 6
 
L TA Hig h b y te
 
4
 
3 1 :2 4
 
L TA L o w by te
 
5  Sy s
 
Fl a gs
 
39
 
38
 
37
 
36
 
35
 
34
 
33
 
32
 
~
 
~
 
Ac ti ve  Hi gh
 
Fi l te r Ha l t
 
L P a c ti v e
 
ATI  Bu sy
 
Noi s e Fo u nd
 
In  Z o om
 
6
 
47
 
46
 
45
 
44
 
43
 
42
 
41
 
40
 
To u ch
 
Pro x im i ty
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
7
 
5 5 :4 8  
 
Com p e ns a ti o n 
 
8
 
6 3 :5 6
 
Cou n te r 
 
8 .1
 
E v e nt Mode
 
TheIQ S228AS/ BhasEvent M odeim plem ent ed 
dur ing 1
-
wir e comm unication. This allows t he 
M CU t o m onit or t he PO UT pin 
f or  st at us 
changes ( pr oxim ity or t ouch m ade or r eleased 
events) instead of  capt uring dat a cont inuously.  
Uponast at uschange,t heIQ S228AS/ Bwillpull 
t he PO UT pin f or  low t o indicate t o t he M CU t o 
r eaddat a.ThePO UTpinwillst aylowf or1.6m s.
 
8 .2
 
I
2
C
 
The I
Q S228AS/ B also allow f or I
2
C st ream ing 
f ordebugging.DataSt reamingcanbechanged 
f r om  1
-
wir e pr otocol t o I
2
C as shown below:
 
Conf i gurat i on:  
Bank2
 
bi t 7: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
1
-
Wire Pr otocol
 
1 
 
I
2
C St r eam ing
 
The M em ory M ap f or t he IQ S228AS/ B can be 
f ound in 
Appendix A
. 
 
The IQ S228AS/ B can comm unicat e on an I 2C 
 
ll
-
upr esist or sshouldbeplacedonSDAandSCL.
 
The Contr ol byt e indicates t he 7
-
bit device 
address ( 0x44H) and t he Read/Wr it e indicator 
bit .
 
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®
 
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9
 
Auto T uning Imp le mentatio n (AT I)
 
ATI is a sophist icated t echnology im plement ed 
in t he latest  
gener ation Pr oxSense
®
 
devices 
t hat  opt im ises t he per f orm ance of  t he sensor  in 
a wide r ange of applications and envir onm ent al 
condit ions (r efer  t o application not e AZD0027 
-
 
Auto TuningI m plem ent at ion) . 
 
ATI m akes adj ust ment s t hr ough ext ernal 
r efer ence capa
cit or s unnecessar y ( as r equir ed 
by m ost  ot her  solutions)  t o obt ain opt im um 
per f or m ance.
 
9 .1
 
Full AT I
 
The IQ S228AS/ B im plem ent s an aut om at ic ATI  
algor it hm. This algor it hm aut om atically adj ust s 
t he ATI par am eter s t o opt im ise t he sensing 
electr odes connect ion t o 
t he device.  
 
The device will execute t he ATI algor it hm 
whenever t he device st ar t s
-
up and or when t he 
counts ar e not wit hin a pr edeter m inedr ange. 
 
There are 2 im port ant  def init ions t o under st and 
f or ATI:
 
9 .2
 
AT IT a rge t
 
ATI adj usts int ernal cir cuit r y accor ding t o t wo 
par amet ers,  t he 
ATI multi pli er
 
and t he 
AT I 
compensati on
. 
 
>
 
The 
ATI mul ti pli er
 
can be viewed as a 
cour seadj ust m entoft heCounts( CS) ,used 
t o achieve t he ATI BASE value.  
 
>
 
The 
ATIcompensat i on
 
isaf ineadj ust
m ent 
used t o r eacht he ATI  TARG ET value. 
 
With t hese t wo par ameters t he Count s ( CS)  of 
t he IQ S228AS/ B is t uned unt il an ATI t ar get 
value of 1200 is achieved.
 
9 .3
 
AT I
BASE
: Si gnifica nc e of AT I Bas e
 
Asm ent ionedabove, t he 
ATImul ti pli er
 
isused 
t o select a base 
value f or t he ATI. The ATI 
BASEvalueisim port ant ,asthisdet erm inest he 
sensit ivit y of t he device.  The sensit ivit y can be 
def ined as:
 
Sensit ivit y = ATI TARG ET / ATI BASE
 
TheATITar getr emainsfixedat1200anditcan 
t hus be seen f r om t his t hat a large
r  base value 
will r esult  in a less sensit ive device.  The 
designer has t he opt ion t o incr ease/r educe the 
sensit ivit y of t he syst em  t hrough t he ATI BASE 
value.  For  m ost  applications t he ATI BASE 
should be kept  def ault .
 
The opt ions f or  t he ATI BASE values are
 
as 
f ollows:
 
Conf i gurat i on:  
Bank1
 
bi t 2
-
0
 
Bi t
 
Select i on
 
000
 
200
 
001
 
50
 
010
 
75
 
011
 
100
 
100
 
150
 
101
 
250
 
110
 
300
 
111
 
500
 
9 .4
 
S e ns itivity  
D
ue  to ATI 
 
Theadj ust m ent of t heATI par am et erswillr esult  
in variat ions in t he count and sensit ivi
t y. 
Sensit ivit y can be observed as t he change in 
count as t he r esult of a 
f ixed
 
change in sensed 
capacit ance. The ATI param et ers have been 
chosen t o provide signif icant over lap.  I t m ay 
t her ef ore be possible t o select var ious 
combinat ions of  ATI m ult iplier and ATI  
compensat ion set t ings to obt ain t he sam e 
count. Thesensit ivit yof the 
variousopt ionsm ay 
however  be dif f er ent f or the same count . 
 
9 .5
 
AT I P roc e dure
 
Whilet heAutom aticATIalgor it hmisinprogr ess 
t his condit ion will be indicated in t he st r eam ing 
dat a and pr oxim ity and touch event s cannot  be 
det ected.  The device will only brief ly r emain in 
t his condit ion and it will be ent er ed only when 
r elatively lar
ge shift s in t he count has been 
det ected.
 
The aut om atic ATI f unct ion aim s t o m aintain a 
const antcount,r egar dlessoft hecapacit anceof  
t hesenseelectr ode( wit hint hem axim umr ange 
oft he device) . 
 
The eff ect s of aut o
-
ATI on t he application ar e 
t hef ollo
wing:
 
>
 
Aut omat ic adj ust ment  of  t he devic e  
conf igurat io n and processing paramet er s  
f or a wide range of  P CB and app licat io n  
designst omaint ai naopt imalconf igurat i o n  
f or proximity and t ouch det ect ion.
 
>
 
Aut omat ic t uning of  t he sense elect rod e at  
st art
-
up t o o
pt imise t he sensit ivit y of  t he 
applic at ion.
 
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>
 
Aut omat ic re
-
t uning when t he devic e  
det ect s changes in t he sensing elect rod es  
capacit ance t o acco mmodat e a large  
rangeof chang esint heenvironme nt of t he 
applic at ion t h at  inf lue nces t he sensi n g  
elect rode.
 
>
 
Re
-
tu
nin g on ly occur s during devic e  
operat io nwhenarelat iv elylargesensit iv it y  
reduct ion is det ect ed.  T his is t o ensure  
smoot h operat ion of  the device durin g  
operat io n.
 
>
 
Re
-
t unin g may t emporarily inf lue nces t he  
normal f unct ioni ng of  the device,  but  in  
most  in
st ances t he ef fect  will be hardly  
not iceab le.
 
>
 
Short lyaf t ert hecompletionof t here
-
t unin g  
process t he sens it ivit y of  a Proximity  
det ect ionmaybereduc edslight lyf oraf ew 
seconds as int erna l f ilt e rs st abilises.
 
Autom at ic ATI can be im plement ed so 
eff ec
t ively duet o:
 
>
 
Excellent  syst em signal t o noise rat i o  
(SNR).
 
>
 
Eff ect ive digit al sign al processing t o  
remove AC and ot her n oise.
 
>
 
T he very st able core of t he devices.
 
>
 
T he built
-
in ca pab ilit y t o accommodat e a  
large ran ge of  sensing e lect rod e  
capacit ances.  
 
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®
 
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®
 
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10
 
DYCAL Specifi c set tings
 
1 0 .1
 
Rel e as e T hres hold
 
TheIQ S228AS/ Bhast heopt iont oincreaset hereleaset hresholdwheninTM. Thishelpst hatsm all 
variat ions caused by m oving a f inger/ hand on a touch pad will not cause the I C t o exit TM
, m aking 
t he solution m or er obust . The opt ions available are shown below:
 
Conf i gurat i on:  
Bank0
 
bi t 6
 
Bi t
 
Select i on
 
0 
 
75% of  Ent r y Delt a
 
1 
 
87. 5% of Entr y Delt a
 
Af t er ent er ing TM,  as soon as t he LTA f ollows t o wit hin 16 counts,  a Ent r y Delt a value is calculated 
as:
 
>
 
Entr y Delt a=LTA
entry
 
-
 
LTA
cur re nt
 
This calculated Entr y Delt a value is used f or t he Release Threshold as shown above.
 
I f  upon entr y,  t he LTA value is 
alr eady wit hin 16 Counts,  t he Ent r y Delt a is t aken as t he calculated 
t oucht hreshold value.
 
1 0 .2
 
Input E na ble
 
TheIQ S228AS/ Bcanbeconf igur edt ohavet heCTRLpinf unct ionasanout putonaPr oxim it yevent.
 
Choosing t he CTRL pin as out put r emoves t he Filt er Ha
lt  and Halt Char ge opt ions of t he pin as an 
input.
 
Using a t ouch event  t o act ivate O UT will m ake t he syst em  less sensit ive which is needed in some 
applications. The LTA will st ill halt  wit h t he det ect ion of a pr oxim it y but  will not  have an 
inf luence on 
t heO UT pin. The LTA will st ill r e
-
calibrat e once at ouch condit ion is det ected.
 
Conf i gurat i on:  
Bank0
 
bi t 7
 
Bi t
 
Select i on
 
0 
 
O utput
 
1 
 
I nput
 
IQ  Sw it ch
®
 
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®
 
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11
 
Electric al Sp ecific a tions
 
1 1 .1
 
Abs olute Ma x imum 
Spe c ifica tions
 
Exceeding t hesemaximum specif i cat i ons may cause damaget ot hedevice
.
 
O per at ing t em per atur e
:
 
I Q S228AS
 
-
20°Ct o 85°C
 
I Q S228B
 
-
4
0°Ct o 85°C
 
Supply Volt age ( V
DDHI
 
V
SS
)
 
3.6V
 
M axim um  pinvolt age(OUT, CTRL)
 
V
DDHI
 
+ 0.
3
V
 
Pin 
volt age ( Cx)
 
1.7V
 
M inim um pin volt age ( VDDHI ,  VREG, O UT, CTRL, Cx)
 
V
SS
 
-
 
0.
3
V
 
M inim um power
-
on slope
 
100V/ s
 
ESD prot ect ion ( VDDHI, VREG ,  V
SS
, O UT, CTRL, Cx)
 
8kV
 
1 1 .2
 
Ge ne ral Cha rac teri s tic s
 
I Q S228AS/ B devices ar e r at edf or supply volt ages bet ween 1.8V and 3
. 6V.  
 
Ta b l e 
11
.
1
: 
IQS2 28 AS/B Gene ra l  Ope ra ti ng  Co nd i tio n s
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
T YP
 
MAX
 
UNIT
 
Su p p ly  vo l tag e
 
V
DDHI
 
1.
8
 
3 .3
 
3 .6
 
V
 
In te rn al  reg u l ato r ou tp ut
 
DDHI 
 
V
REG
 
1 .6 4
 
1 .7
 
1.
75
 
V
 
Bo o s t Po wer o pe ra ti n g c u rren t 
 
DDHI 
 
I
IQ S2 2 8 AS/B_ BP
 
120
 
129
 
135
 
˛
A
 
Norm a l  Po wer op e ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ NP
 
4 .9
 
6 .4 5
 
8 .1
 
˛
A
 
L o w p o wer1  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B
 
L P1
 
2 .9 5
 
3 .8
 
4 .8 5
 
˛
A
 
L o w 
p o wer2  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ L P2
 
1 .8 8
 
<2 .5
1
 
3 .2
 
˛
A
 
C
x
 
p i n c a p ac i ta n ce
 
DDHI 
 
C
C
xL o a d
 
120
 
pF
 
Char ge Transf er  Tim ings f or  low powerm ode isf ound in 
Section 
7.12
.
 
Ta b l e 
11
.
2
: 
Sta rt
-
u p a n d s h u t
-
d o wn sl o pe  Ch a rac te ri s ti cs
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
MAX
 
UNIT
 
POR
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
POR
 
0 .3
2
 
1.
7
 
V
 
VDDHI 
re s e tl e ve l
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VDDHI
 
N/A
 
1 .7
 
V
 
VREG
 
re s e t le v el
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VREG
 
N/A
 
1 .5 8
3
 
V
 
1
 
Al l l ow p ower c urr en t v al ue s  aris e fr om 
c h arac teriz a tio n do ne fro m (
-
) 35°C  to ( + ) 8 5°C a t 3. 3V.
 
2
 
F or a p ower c y c le,e ns ure lower ing  VDD HI b el ow th e min im um v a lue  bef ore r a m pin g VD DHI pas t th e 
max im um PO R v a lue
 
3
 
F igur e  
2
.
4
 
Cap ac itors  C 1 & C3 s h ou ld be c hos e n to  c omp ly  wit h th is  s pec if ic at io n
 
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®
 
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®
 
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1 1 .3
 
Output Cha ra c teri s tics
1
 
Ta b l e 
11
.
3
: 
TOUT Cha ra c te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S INK  
 
O utput  Low 
volt age
 
100mV
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
100mV
 
V
DDHI
 
= 3.3V
 
10
 
100mV
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
4
: 
POUT Ch a rac te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.1V
 
V
DDHI
 
= 3.3V
 
10
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
5
: 
Comb i ne d  Cha ra cte ri s ti cs
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
17
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.V
 
V
DDHI
 
= 3.3V
 
20
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
1
 
I/ O sink capabilit ies only in Act ive Low conf igur ation. I /O sour ce capabilit ies only in Act ive High 
conf igur ation.
 
IQ  Sw it ch
®
 
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®
 
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1 1 .4
 
P a c ka ging I nforma tion
 
1 1 .4.1
 
T S OT2 3
-
6 
 
Fi g u re 
11
.
1
: 
TSOT2 3
-
6  Pac k ag i n g
1
 
Ta b l e 
11
.
6
: 
TSOT2 3
-
6  Di me nsi o n s
 
Dimen sion
 
Min ( mm )
 
Max (m m)
 
A
 
2 .6 0
 
3 .0 0
 
B
 
1 .5 0
 
1 .7 0
 
C
 
2 .8 0
 
3 .0 0
 
D
 
0 .3 0
 
0 .5 0
 
E
 
0 .9 5  Bas ic
 
F
 
0 .8 4
 
1 .0 0
 
G
 
0 .0 0
 
0 .1 0
 
H
 
0 .3 0
 
0 .5 0
 
I
 
0°
 
8°
 
J
 
0 .0 3
 
0 .2 0
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.2
 
WLCS P
-
8
 
Fi g u re 
11
.
2
 
IQS2 2 8 B W L CSP
-
8  Di me n si o ns  (i n mm)
 
Top view
 
Bott om  view
 
Side
 
view
 
P i n 1
 
m
arki ng
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.3
 
DFN
-
6
 
DFN
-
6 Packaging
 
DFN
-
6 Dim ensions 
 
Dimen sion
 
Min
 
Max
 
A
 
3 .0 0m m
 
3 .0 0m m
 
B
 
2 .5 0m m
 
2 .5 0m m
 
C
 
0 .3 0m m
 
0 .3 0m m
 
D
 
0 .3 5m m
 
0 .3 5m m
 
E
 
1 .3 0m m
 
1 .3 0m m
 
F
 
2 .2 0m m
 
2 .2 0m m
 
G
 
0 .0 5m m
 
0 .0 5m m
 
H
 
0 .7 5m m
 
0 .7 5m m
 
I
 
0 .8 0m m
 
0 .8 0m m
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.4
 
MS L Le v e l
 
M oist ure Sensi ti vit y Level
 
(M SL) r elates t o t he packaging and handling precautions f or some 
semiconductor s. TheM SLisanelectr onicst andardf ort het im eper iodinwhicham oist ur esensit ive 
device can be exposed to ambient r oom condit ions ( appr oxim at ely 30°C/85%RH see J
-
STD033C 
f
or m or e inf o)  bef ore r ef low occur.
 
Pac kag e
 
L evel( d u r atio n )
 
TSOT2 3
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
WL CSP
-
8
 
Non
-
e n ca ps u l ate d d e vi ce  

not m o is tu re  se n si tiv e
 
Ref l o w p rofi le  p ea k  
te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
DFN
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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12
 
Datash eet an d Part
-
number I nform ation
 
1 2 .1
 
Orde ring Informa tion
 
O r der swillbesubj ectt oaMO Q(M inim umO r der Q uantity) of af ullr eel. Contactt heoff icialdist r ibut or  

www. azot eq. co
m
. 
 
For  large order s, Azoteqcan provide pre
-
conf igured devices. 
 
ThePart
-
num ber canbegener atedbyusingUSBPr og. exeor t heI nt eract ivePart Num ber gener ator 
on t he websit e. 
 
I C NAM E
 
I Q S228AS
 
=
 
I Q S228 Self  Capacit ive
 
I Q S228B
 
=
 
I Q S228 Self  
Capacit ive
 
CO NFIG URATIO N
 
zzz zzz zz
 
=
 
I C Conf igur at ion( hexadecim al)
 
PACKAG E TYPE
 
TS
 
=
 
TSO T23
-
6 package
 
C
S
 
=
 
WLCSP
-
8 package
 
DN
 
=
 
DFN
-
6 package
 
BULK PACKAG I NG
 
R
 
=
 
Reel 
 
TSO T23
-
6 andWLCSP
-
8: 
3000pcs/ r eel
 
DFN
-
6: 6000pcs/r eel
 
=
 
M OQ = 1r eel 
( or der s shipped asf ull r eels)
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .2
 
Dev ice  Ma rk ing 

T op
 
1 2 .2.1
 
T S OT2 3
-
6 P a ck a ge Ma rk ings
 
There ar e 2 m ar king versions in circulation f or I QS228AS
 
and IQ S228B
:
 
Fi g u re 
12
.
1
:
Fi rs t Ma rki n g  Va ria n t o fIQS2 2 8 AS
 
Fi g u re 
12
.
2
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 AS
 
Fi g u re 
12
.
3
: 
Fi rs t Ma rk i n g Va ria n t o fIQS2 2 8
B
 
Fi g u re 
12
.
4
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 B
 
I C NAM E
 
228A
 
=
 
I Q S228AS Self Capacit ive
 
22
-
A
 
=
 
I Q S228AS Self Capacit ive
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 
t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .2.2
 
WLCS P
-
8  P a ck a ge Ma rk ings
 
Fi g u re 
12
.
5
 
To p Ma rk in g  o f I QS2 2 8 B W L CSP Pa ck a g e
 
I C NAM E
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 

ZZ
 
I C VERSI O N
 
V
 
Product Code
 
PPP
 
1 2 .2.3
 
DFN
-
6  P a c ka ge  
Ma rk ings
 
Fi g u re 
12
.
6
 
IQS2 2 8 B
 
DFN
-
6  Pa c ka g e  To p  Ma rk i n g
 
I C NAM E
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .3
 
T a pe  
a nd Ree l 
S pe c ific a tion
 
Fi g u re 
12
.
7
: TSOT2 3
-
6  T ap e Sp e c ifi ca ti on .
 
Ta b l e 
12
.
1
 
Ta pe  a nd  Re el  Di me n s io n s
 
Dev ic e
 
P ack age
 
Ty pe
 
P ack age
 
D ra wi ng
 
P ins
 
QTY  
per 
reel
 
Reel
 
Di a m ete r
 
(mm )
 
Reel
 
Wi dth
 
W1 (mm )
 
A0
 
(mm )
 
B0
 
(mm )
 
K0
 
(mm )
 
P1
 
(mm )
 
W
 
(mm )
 
P in1
 
Quadrant
 
I QS2
2
8
AS
z zzz zzz zTS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz TS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3
000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz CS R
 
WLCS P 8
 
WLCS P
-
8
 
8
 
3000
 
17 9
 
8. 4
 
1
 
1 . 5 5
 
0. 48
 
4
 
8
 
Q3
 
I QS228Bzz zzz zzz DNR
 
DFN6
 
DFN
-
6
 
6
 
6000
 
330
 
12. 4
 
2. 8
 
3. 3
 
1. 2
 
4
 
12
 
Q1
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Marc h 2022
 
Appendi x A.
 
Memory  Map
 
Device Inform ation
 
[ 00H]  PRO D_NR
 
The pr oduct  num berf or the IQ S228A is 39 ( decimal) .
 
[ 01H]  SW_NR
 
Thesof t war eversionnum beroft hedeviceRO Mcanber eadint hisbyte.Thelatestsof t wareversion 
is 29 ( decim al) .
 
[ 10H]  SYSFLA G S0 
 
Bit  7
-
6:  
 
SYSTEM _USE
 
Bit  5: 
 
Logic: 
LogicO utput I ndication
 
0 = Act ive Low
 
1 = Act ive High
 
Bit  4: 
 
Halt :
 
I ndicat es Filt er  Halt st at us
 
0 = LTA not  being Halt ed
 
1 = LTA Halt ed
 
Bit  3: 
 
LP:
 
Low PowerM ode
 
0 = Samplet im e BP
 
1 = Samplet im e LP
 
Bit  2: 
 
ATI:
 
St atus of  aut omat ed ATI r out ine
 
00H
 
Pro d u ct Nu mb e r ( P RO D_ NR)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
39 ( Decim al)
 
R
 
Note
 
01H
 
So f t w are Num b er ( S W_ N R)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
29 ( Decim al)
 
R
 
Note
 
10H
 
Syst em  Flag s (
Sy s_F lag s )
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
~
 
Logic
 
Halt
 
LP
 
ATI
 
ND
 
Zoom
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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0 = ATI is not busy
 
1 = ATI in progr ess
 
Bit  1: 
 
ND:
 
This bit indicatest he pr esence of noise int erf erence.
 
0 = I C has not  det ectedthe presence of  noise
 
1 = I C has det ected t hepresence of  noise
 
Bit  0: 
 
ZOOM : 
Zoom  will indicate f ull
-
speed char ging once an undebounced proxim it y is 
det ected. I n BP m ode, t his
 
will not  changet he charging fr equency.
 
0 = I C not zoom ed in
 
1 = I C det ect ed undebounced pr oxim it y andI C ischar ging at f ull
-
speed ( BP)
 
[ 31H]  St atus
 
Bit  7: 
 
Dycal:  
Dycal Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  6:2:  
 
SYSTEM _USE
 
Bit  1: 
 
Touch: 
Touch Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  0: 
 
Prox:
 
Pr oxim it y Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
31H
 
St atu s
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
DYCAL
 
Touch
 
Pr oxim it y
 
R
 
Note
 
42H
 
Co u n t s_Hig h  ( CS _H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts High Byt e
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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8
AS /B  Dat as heet  
 
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Marc h 2022
 
43H
 
Co u n t s_L o w  ( CS_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts Low Byt e
 
R
 
Note
 
83H
 
L T A_High  ( L T A_H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age High Byt e
 
R
 
Note
 
84H
 
L T A_Lo w  ( L T A_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age Low Byt e
 
R
 
Note
 
C4H
 
F u se Bank  0( F B_ 0)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
1
 
f or m ore details
 
R
 
Note
 
C5H
 
F u se Bank  1( F B_ 1)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
2
 
f or m ore details
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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8
AS /B  Dat as heet  
 
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Marc h 2022
 
[ C8H]  
Defaul t CommsPoint er
 
Thevaluest or edint hisregist erwillbeloadedintot heCom msPointer at t hest ar tofacom m unicat ion 
window.  For  example, if  t he design only r equir es t he Pr oxim it y St at us inf or m at ion each cycle,  t hen 
t he 
DefaultCom m sPointer
 
. Thiswouldm eant hatatt hest ar tofeach 
comm unicat ion window, t he comm s pointer would alr eady be set t o t he Pr oxim it y St at us r egist er, 
sim ply allowing a READ t or etr ieve t he dat a, wit hout t he need of set t ing up t he address.
 
C6H
 
F u se Bank  2( F B_ 2)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See
 
Table 
3
.
4
 
f or m ore details
 
R
 
Note
 
C7H
 
F u se Bank  3( F B_ 3)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
5
 
f or m ore details
 
R
 
Note
 
C8H
 
DEF AUL T _CO MM S_ PO IN T ER
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
( Beginning of Device Specif ic Data)
 
R/ W
 
Default
 
10H
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Marc h 2022
 
Appen dix B.
 
Errata
 
Filte r 
H
a lt 
T
ime s
 
W

bit isset, t hehalt t im esasspecif iedinSection 
3
 
willbescaled16xlonger,  
due t o added dead t im ewhen t heI C 
cor e is t ur ned off t or educe power  consum ption:
 
Us er Se lec tab le Conf ig urati on O pt ions : Ba nk  1 

F ul l A T I (
0x C5H
)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 320s ec onds
 
01 = 640s ec onds
 
10 = Nev er
 
11 = 48s ec onds
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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Marc h 2022
 
Appendi x C.
 
Contact I nform atio n
 
V
isit  
www. azot eq. com
 
f or a list of 
dist r ibut ors and worldwide r epr esent at ion.
 
USA
 
A sia
 
Sout hA f ri ca
 
Physical 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
1 Bergsig Avenue
 
Paar l
 
7646
 
Sout h Afr ica
 
Post al 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
PO  Box 3534
 
Paar l
 
7620
 
Sout h Afr ica
 
T el
 
+1 512 538 1995
 
+86 755 8303 5294
 
ext 808
 
+27 21 863 0033
 
Emai l
 
info@azoteq.com
 
info@azoteq.com
 
info@azoteq.com
 
P
ate nts  
as  l is ted  on  
www. a z oteq.c om /pat ents
-
tr ad ema r k s /
 
may  
r elate  to t he dev ic e or  us ag e of  the  dev ic e
.
 
Az oteq
®
,Cr y s tal Dr iv er

,IQ Sw itc h
®
,Pr ox S ens
e
®
,Pr ox F us ion
®

log o ar e tr ade mar k s  of Az o teq.
 
T h e  in fo r m atio n  in t h is Data sh e e t is b e lie ve d  to  b e a ccu r a te  a t t h e tim e o f p ub lica tio n . Azo te q  u se s r e a son a b lee ff o rt to m a
inta in th e in form a tio n  up
-
to
-
d a te a n d a ccu ra te ,b u t do e s 
n o twarr a n tth e a ccu r a cy,co m p le te n e sso rr e lia b ilityo fthe inf or m a tio n c

o r  warr a n tie s, e xpr e ss or  imp lie d , of a n y kind , inclu d ing  r e pr e se n tatio n s ab o u t th e  su ita b ility o f the se  pr o d u cts o r inf or m a t
ion  for  a n y p ur po s
e .  Azo teq  d iscla im s a ll war r a ntie s a nd 
co n d ition s with  r e g ar d  to  th e se  pr o d u cts a nd  inf o r m a tio n , inclu d ing  b u t no t lim ite d  to  a ll im plie d  war r a n tie s a nd  co n d ition s 
o f m er ch a n ta b ility,  fitn e ss fo r  a  p a r ticu lar  p u r p o se , title 
a n d  n o n
-
infr ing em e n t o f a n y th i
r d  pa r ty int e llectu a l p r o p er ty r igh ts.  Azo te q  a ssum e s n o  lia b ility fo r  a n y d a m a g e s o r  injur y a r isin g  fr om  a n y u se  o f th e  inf o
r m a tion  o r  th e  p r od u ct o r 
ca u se d  b y, with o u t lim ita tio n , fa ilu r e o f pe r form a n ce , e r r or , om issio n , inte r ru p tio n , d e fe ct, de lay in o p
e r a tio n o r tr a n sm issio n , e ve n  if Azo te q  h a s b e e n  a d vised  o f th e p o ssibility of 
su ch  d a m a ge s. T h e  ap p lica tio n s m en tio n e d  he r e in a r e  u se d  so lely fo r  the  p u r po se  o f illustr a tio n  a n d  Azo teq  m a ke s n o  war r a n ty 
o r  r e pre se n ta tio n  tha t su ch  a p p lica tio n s will b e 
su i
ta b le with o u t fur th er  m o d ificatio n , n or  r e com m e n d s th e  u se  o f its pr o d u ctsfo r  a pp lica tio n t h a t m a y pr e se n t a r isk to  h um a n  l
ife  d ue  t o m a lfu n ctio n  or  o th er wise . Azo te q  pr o d u cts 
a r e  n o t au th o r ized  fo r  u se  a s cr itical com p o ne n ts in life  su p p or t d e vices or  s
yste m s. No  lice n se s to  p a te n ts a re  g r a nte d , im p licitly, e xp re ss o r  im p lie d , b y e sto p pe l o r  o the r wise, 
u n d e r a n y inte lle ctu a l p r o pe r ty r igh ts.  In th e e ve n t tha t a n y o f th e  a b o vem e n tio n ed  lim ita tio n s o r e xclusio n s d o e s n o t a p p ly
 
to ta l lia b ility fo r  a ll losse s, 
d a m a g e s an d  ca u se s o f a ction  ( in co n tr a ct,  to r t ( inclu d ing  witho u t lim ita tio n , ne g lig e n ce)  or  o th e r wise)  will n o t e xce e d  th e  
am o u n t a lre ad y p a id b y th e  cu sto me r  fo r  th e  p r od u cts.  
Azo te q  r e se r ve s the  r igh t to  a lter  its p r o d u
cts, to  m a ke  co r r e ctio n s, d e let ion s, m o d ificat ion s, e n h a n ce m en ts,  im p ro ve m en ts a n d  o th er  ch an g e s to  th e  co n ten t a n d  inf o rm a ti
o n, its 
p r o d u cts, p ro g r am s an d  ser vices a t an y time  o r  to m o ve  or  d iscon tin u e a n y co n te nts,  pr o d ucts,  p r og r am s or  ser vices with ou t 
pr ior n o tificatio n . Fo r  t h e  m o st u p
-
to
-
d ate  info r m ation 
a n d  b ind ing T er m s a nd  Co n d ition sp lea se r e fer  t o
 
www.a zo teq .co m
.
 
i nfo@azoteq. com
 
",Operation temperature,Not Found
" 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
I QS22
8
AS /B  Dat as heet  
 
P age 
1
 
of  
41
 
A ll  right s res erv ed
 
Rev is ion 1.
4
1
 
Marc h 2022
 
IQ S228A
S
/B D AT ASHEET
 
Single channel capacit ive pr oxim it y 
 
and t ouch cont r oller
 
The Pr oxSense
®
 
IQ S228A S/ B
 
is a single channel self
-
capacit ive sensor wit h Dynam ic Calibrat ion 

Feature s
 
>
 
1 Self  capacit ive channel
 
>
 
>
 
Pr oxim it y and Touch output s
 
>
 
Autom at ic Tuning
 
>
 
I nter nal Refer ence Capacit or
 
>
 
M inim um exter nal com ponent s 
 
>
 
1
-
Wire dat a str eam ing 
 
>
 
I
2
C Debug opt ion
 
>
 
User selectable opt ions (O TP):
 
>
 
Ext  sync cont r olor Ext f ilt er contr ol
 
>
 
I /O  Sink or  Sour ce selection
 
>
 
Tim e
-
out f or st uck key
 
>
 
Pr oxim it y and Touc
h sensit ivit y selections
 
>
 
Low Power
 
m odes
 
>
 
Low powerm ode 2. 5

A 
 
>
 
Supply volt age: 1.8V t o 3. 6V 
 
Applicati ons
 
>
 
Pr oxim it y sensors
 
>
 
SAR det ectionf or  Tablets
 
>
 
On
-
ear  det ection f or m obile phones
 
>
 
3D glasses
 
>
 
Personal M edia Player s
 
>
 
Whit e goods and appliances
 
>
 
HumanI nter f ace Devices
 
>
 
Pr oxim it y activat ed backlight ing
 
Ava il a ble  O ptions
 
T
A
 
T SO T 23
-
6
 
WL CS P
-
8
 
DF N
-
6
 
-
20
°
C t o 85
°
C
 
I Q S228AS
 
-
 
-
 
-
40
°
C t o 85
°
C
 
I Q S228B
 
I Q S228B
 
I Q S228B
 
R oH S2
 
Com pl i ant
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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I QS22
8
AS /B  Dat as heet  
 
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Contents
 
I QS 22 8AS /B DA TAS HE E T
 
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1
 
1 OVE RV IE W
 
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5
 
1.1
 
D
E V I CE
 
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5
 
1.2
 
O
P E RATI ON
 
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5
 
1.3
 
A
P P LI CA BI LITY
 
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5
 
2 PACKA GIN G A ND P IN
-
OU T
 
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6
 
2.1
 
IQ S2 28 AS/ B
 
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6
 
2.1.1  P in
-
ou t TSOT 2 3
-
6
 
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6
 
2.1.2  P in
-
ou
t W LC SP
-
8
 
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7
 
2.1.3  P in
-
ou t DFN
-
6
 
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8
 
2.2
 
S
CHE MA TI C
 
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9
 
2.2.1  TSO T 23
-
6
 
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9
 
2.2.2  W LCS P
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8
 
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10
 
2.2.3  DF N
-
6
 
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11
 
3 U S E R CON FI GURA BLE  OPT IONS
 
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12
 
3.1
 
C
ONFI GURI NG 
D
EV I CE S
 
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12
 
3.1.1  IQ S2 28 AS/ B Us er 
Se lec tab le O pti ons
 
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12
 
4 ME A S URIN G CAPA CI TAN CE US IN G T HE  
C HA RGE T RANS FER
 
ME TH O D
 
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15
 
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16
 
6 OPE RA TIN G PR INC IPLE
 
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17
 
7 CO NFI GURA BLE  S E TTIN GS
 
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17
 
7.1
 
CT RL:
 
E
XTE RNA L 
C
ONTROL
 
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17
 
7.1.1  Char g e H alt
 
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17
 
7.1.2  Ha lt LT A Fi lter
 
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17
 
7.1.3  Pu ls e 
o n CTR L:
 
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17
 
7.2
 
LO G IC
 
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18
 
7.3
 
RF
 
N
OI S E ON 
IQ S228AS /B
 
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18
 
7.3.1  ND: RF  Nois e Det ec ti on
 
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18
 
7.3.2
 
IQ S2 28 AS/ B RF  Nois e Im mun ity
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18
 
7.4
 
P
ROXI MI TY  
T
HRE S HOLD
 
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19
 
7.5
 
T
OUCH 
T
HRE S HOLD
 
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.
 
19
 
7.6
 
M
ULTI P LI E RS
 
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19
 
7.7
 
C
HA RGE 
T
RA NS FE R
 
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.
 
19
 
7.8
 
T
A RGET 
C
OUNTS
 
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19
 
7.9
 
E
NA B LE  
P
A RTIA L 
AT I
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19
 
7.10
 
DY CA L
 
T URBO
 
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20
 
7.11
 
F
I LTE R 
H
A LT
 
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20
 
7.12
 
L
OW 
P
OWE R 
M
ODE S
 
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20
 
7.13
 
Z
OOM
 
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20
 
8 S T RE A MIN G M ODE
 
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21
 
8.1
 
E
V E NT 
M
ODE
 
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22
 
8.2
 
I
2
C
 
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22
 
9 A U TO TU NING IM PLE ME NTAT I
O N (A TI)
 
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23
 
9.1
 
F
ULL 
AT I
 
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23
 
9.2
 
AT I
 
T
A RGET
 
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23
 
9.3
 
AT I
BAS E
:
 
S
I GNI FI CA NCE OF 
AT I
 
B
A SE
 
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23
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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AS /B  Dat as heet  
 
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9.4
 
S
E NS I TIV I TY  
D
UE  TO 
AT I
 
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23
 
9.5
 
AT I
 
P
ROCE DURE
 
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23
 
1 0 DY CA L S PE C IFI C S E TTI NGS
 
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25
 
10.1
 
R
E LE A SE  
T
HRES HOLD
 
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25
 
10.2
 
I
NP UT
 
E
NA B LE
 
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25
 
1 1 E LE CTR ICA L S PE CIF I CA TI ONS
 
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26
 
11.1
 
A
B S OLUTE  
M
A XIMUM 
S
PE CI FI CA TI ONS
 
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....
 
26
 
11.2
 
G
E NE RA L 
C
HA RA CTE RI STI CS
 
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26
 
11.3
 
O
UTP UT 
C
HA RA CTE RIS TI CS
 
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27
 
11.4
 
P
A CK A GI NG 
I
NFORMA TION
 
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28
 
11.4. 1 TSO T 2 3
-
6
 
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28
 
11.4. 2 WLC SP
-
8
 
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29
 
11.4. 3 DFN
-
6
 
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30
 
11.4. 4 M SL Lev e l
 
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31
 
1 2 DATAS HE E T A ND PART
-
NU M BE R INF OR MATI ON
 
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32
 
12.1
 
O
RDE RI NG 
I
NFORMATI ON
 
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32
 
12.2
 
D
EV
I CE  
M
A RK I NG 

T
OP
 
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33
 
12.2. 1 TSO T 2 3
-
6 Pac k age  Mar k ings
 
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33
 
12.2. 2 WLC SP
-
8 Pac k ag e Mar k ings
 
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34
 
12
.2. 3 DFN
-
6 Pac k ag e M ark ings
 
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34
 
12.3
 
T
A P E A ND 
R
EE L 
S
PE CI FICA TI ON
 
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35
 
A P PE ND IX  A . ME M OR Y MAP
 
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36
 
A P PE ND IX  B . E RRA TA
 
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40
 
F
I LTE R 
H
A LT 
T
I
MES
 
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40
 
A P PE ND IX  C . C ONTA CT I NF ORMA TI ON
 
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41
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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List of Ab brevi ation s
 
ATI
 
Autom at ic TuningI m plem ent at ion
 
BP
 
Boost  Power M ode
 
CS
 
Counts( Number of  Charge Transf ers)
 
C
s
 
I nter nal Refer ence 
Capacit or
 
DYCAL
TM
 
Dynam ic Calibrat ion
 
EM I
 
Electr omagnet icI nter f erence
 
ESD
 
Electr o
-
St atic Dischar ge
 
FTB/ EFT
 
( Electr ical) Fast Transient  Burst s
 
G ND
 
G r ound
 
HC
 
Halt  Char ge
 
LP
 
Low PowerM ode
 
LTA
 
Long Term  Aver age
 
ND
 
Noise Det ect
 
THR
 
Thr eshold
 
TM
 
Touch M ode
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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1
 
Overvi ew
 
1 .1
 
Dev ice  
 
The 
I Q S228AS/ B 
is a single channel 
capacit ive proxim it y and t ouch device which 
employs an inter nal volt age r egulator and 
r efer ence capacit or ( C
s
).
 
The IQ S228AS/ B device has a dedicat ed 
pin(s)
 
f or  t he connect ion of a sense 
electr ode(s)  ( Cx)  and out put  pin(s)  f or 
proxim it y and t ouch event s on O UT. The 
polarityoft heoutput pinscanbeconf igur ed. A 
1
-
wir e open drain dat a str eam ing pr otocol O R 
I
2
C inter f ace is im plement ed f or  debugging 
pur poses.
 
Special device conf igur at ion can be done by 
sett ingonet im epr ogr amm able(O TP)opt ions. 
 
The device aut om atically t r acks slow varying 
envir onm ent al changes via var ious signal 
processing algor it hm s and has an Autom atic 
Tuning Im plement ation ( ATI ) algor it h
m t o 
calibrat et he device t o t he sense elect r ode.  
 
f orm of hyst er esis t hat can t r ack slow var ying 
envir onm ent al change even while t he sensor 
is in a t ouch st at e. This is ideal f or port able 
applications.
 
The 
char ge 
t r ansf er
 
method of  capacit ive 
sensingisemployedontheIQ S228AS/ B.( The 
char ge t r ansf er pr inciple is t hor oughly 
descr ibed in t he applicat ion not e:  

-
 
1 .2
 
Ope ra tion
 
The device has been designed t o be used in 
applications wher e proxim it y is r equir ed and 
t ouch condit ions can prevail f or an extended 
per iod of t im e which m ay r esult  in 
uncompensat ed dr if t in convent ional 
capacit ive sensor s. 
 
Alowt hresholdisusedtodet e
ct t hepr oxim it y 
of an obj ect,  wit h a higher t hreshold f or  t ouch 
det ection. 
 
Dynam ic Calibrat ion is perf orm ed when a 
TOUCH condit ion is detected f or  longer  t han 
t
DY CA L
. Thehyst er esisalgor it hmwillnowcheck 
f ort her eleasecondit ionoft het ouch,whiles
t ill 
t r acking envir onm ent al changes
 
1 .3
 
Applic a bili ty
 
All
 
specif ications, except wher e specif ically 
m ent ioned ot her wise, provided by t his 
dat asheet
 
are applicable t o t he f ollowing 
r anges:
 
>
 
Tem per at ure:
 
I Q S228AS: 
 
-
20
°
Ct o+85
°
C
 
I Q S228B:  
 
-
40°Ct o+85°C
 
>
 
Supply volt age( V
DDHI
) :  1.8V t o 3. 6V
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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2
 
Packag ing
 
an d Pin
-
Out
 
TheIQ S228AS/ BisavailableinaTSO T23
-
6package.
 
t heIQ S228BisavailableinTSO T23
-
6
, DFN
-
6
 
or WLCSP
-
8
 
package
 
2 .1
 
IQ S 2 28 AS/ B
 
2 .1 .1
 
P in
-
out
 
T S OT2 3
-
6
 
Fi g u re 
2
.
1
:
Pi n
-
ou t o f I QS2 2 8 AS/B i n  t he  T SOT23
-
6  pa ck a g e.
 
Ta b l e 
2
.
1
: 
Pi n
-
ou t de sc ri p ti o n
 
IQ S22 8AS /B in T SO T 23
-
6
 
Pi n
 
Nam e
 
Ty p e
 
Fu n c ti o n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o rp ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  ca p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .1 .2
 
P in
-
out WLCS P
-
8
 
Ta b l e 
2
.
2
 
8 
-
pi n  W L CSP Pi n
-
ou t Desc ri pti o n
 
IQ S2
2 8B
 
8
-
p in WL C SP
 
Pin
 
Nam e
 
Ty pe
 
Fu nc tio n
 
1
 
Cx
 
Se n s e e l ec trod e
 
Con n e ct to c o nd uc tiv e  a re a  in te n d e d f o r 
s e ns o r
 
2
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
3
 
VREG
 
Reg u l a to r ou tp u t
 
Req u i res  ex te rn a l c a pa c ito r
 
4
 
VSS
 
Si g n a l GND
 
5
 
INPUT
 
Dig i tal  I n pu t
 
Fl o a ti n g i n pu t d u ri n g ru n ti m e. 
 
Rec o mm en d e d: Con ne c tto  
POUT
 
6
 
POUT 
/ ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
7
 
VDDHI
 
Su p p ly  I np u t 
 
Su p p ly  Vo lta g e I n pu t
 
8
 
PGM
 
Con fi g u ra tio n  pi n
 
Con n e cti on  f o r OTPp ro g ramm i n g. Flo a tin g  in p u t d u ri n g  
ru n tim e . 
 
Rec o mm en d e d: Con ne c tto  
OUT
 
p i n . Pro g ram mi n g c a n 
s ti ll  b e p e rfo rm ed  us i ng  t hi s  pin , p rov i de d  a d i od e  is  
u s e d. (Se e  AZD0 2 6  

Con fi g ura ti o n T o ol s  Ove rvi e w)
 
IQ S228
 
1
 
2
 
3
 
4
 
8
 
7
 
6
 
5
 
Fi g u re 
2
.
2
 
IQS2 2 8 B8
-
p i n W LCSP
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .1 .3
 
P in
-
out
 
DFN
-
6 
 
Fi g u re 
2
.
3
: Pi n
-
o u t of IQS2 2
8B
 
i n  DFN
-
6 p a ck a ge .
 
Ta b l e 
2
.
3
:Pi n
-
ou t de sc ri p ti o n .
 
IQ S22 8
B
 
6
-
p in DF N
 
Pin
 
Name
 
T ype
 
F u n ctio n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  
c a p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2
 
S c he ma tic
 
2 .2 .1
 
T S OT2 3
-
6
 
Fi g u re 
2
.
4
: 
Typ i ca l  ap p li ca ti on re fe re nc e s ch e ma tic  o fIQS2 28 AS/B. C2 &C3 are  op ti on a l for a d d ed  RF i mmu n i ty .
 
Fi g u re 
2
.
5
: 
IQS2 2 8 AS/Bo u tp ut p i n c o nfi gu ra tio n
 
fo r I 2 C de bu g  o pe ra tio n ,o r d riv in g  L EDs  (a c tiv e h i g h o r lo w o p ti o n  
a v a il a bl e ).
 
Where a syst em  level ESD st r ike is f ound t o cause t he I C t o go int o ESD induced latch
-
up, it  is 
suggest edt hatt hesupplycurr ent t ot heI Q S228ICislim it edbym eansof ase
r iesr esist or t hat could 
lim it  t he m axim um supply curr ent t ot heI C t o <80m A.
 
Ref e r t o  AZD0 0 8 fo r 
to u ch  k ey  de si g n
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2 .2
 
WLCS P
-
8
 
Fi g u re 
2
.
6
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
WL CSP
-
8  Pac k ag e
. C2 &C3 a re  o pti on a l  fo r ad d e d RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2 .3
 
DFN
-
6
 
Fi g u re 
2
.
7
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
DFN
-
6  Pa ck a ge
. C2 &C3a re  o p ti o n al  f o ra d de d  RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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3
 
User Co nfigur able Options
 
This section list
s t he user  conf igur able 
sett ings.
 
The
 
deviceisf ullyf unct ionalinit sdef aultst at e, 
but  som e applications may r equir e alt ernat ive 
conf igur ation sett ings.  These sett ings are 
enabled by conf igur ing O ne Tim e 
Pr ogr amm able( O TP)  user opt ions.
 
Conf igur ation c
an be done on packaged 
devices or in
-
cir cuit.  I n
-
cir cuit conf igur at ion 
m ay be lim it ed by values of ext ernal 
components chosen.
 
Popular conf igur at ions ar e available ex
-
st ock 

please check wit h t he local dist r ibutor f or 
availabil it y.  Azoteq can supply pre
-
c
onf igur ed 
devices f or  large quant it ies. 
 
3 .1
 
Configuri ng Dev ic es
 
Azoteqof f er saConf igurationTool( CT210/ 20) 
and accom panying software ( USBPr og. exe) 
t hat can be used t o progr am t he O TP user 
opt ions f or  pr otot yping purposes. M or e det ails 
r egarding t he conf igur at ion of t he device wit h 
t he USBPr og progr am  is explained by
 
application not e: 

AZD007 

USBPr og 
O verview

which can be f ound on t he Azot eq 
websit e. 
 
Alt ernat ive pr ogr am m ing solutions f or  t he 
I Q S228AS/ B also exist . For  f ur t her  enquir ies 
r egarding t his, please cont act  Azot eq at 
Pr oxSenseSuppor t @azot eq. com or t he loc
al 
dist r ibut or
 
3 .1 .1
 
IQ S 2 28 AS/ B Use r Se le c table O ptions
 
Ta b l e 
3
.
1
: 
IQS2 2 8 AS/B Ba nk 0  Us e r Se l ec ta bl e  Opti o ns  (0xC4H)
 
Bi t
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Name
 
I N_EN
 
REL
T HR
 
LOGI C
 
T
T HR 2
 
T
T HR 1
 
T
T HR 0
 
P
T HR 1
 
P
T HR 0
 
bi t 7
 
I N_E N: 
I nput E nable
 
S ect ion 
10. 2
 
0 = Out put  (P rox imi ty )
 
1 = I nput
 
bi t 6
 
RE L
T HR
: 
Releas e Thres hold
 
S ect ion 
10. 1
 
0 = 75%
 
1 = 87%
 
bi t 5
 
LOGIC:
 
Out put logics elect  (Only when S TREA MI NGmode is  
dis abled) 
 
S ect ion 
7. 2
 
0 = S of t ware Open Drain Act iv e Low
 
1 = Act iv e High
 
bi t 4
-
2
 
T
T HR
:
 
Touc h Thres holdS elect ions
 
S ect ion 
7. 5
 
000 = 72/ 256
 
001 = 4/ 256
 
010 = 8/ 256
 
011 = 24/ 256
 
100 = 48/ 256
 
101 = 96/ 256
 
110 = 128/ 256
 
111 = 160/ 256
 
bi t 1
-
0
 
P
T HR
: 
P rox imi ty Thres hold S elec t ions  
 
S ect ion
 
7. 4
 
00 = 4
 
01 = 2
 
10 = 8
 
11 = 16
 
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Ta b l e 
3
.
2
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Fu l l  ATI (0x C5H)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
Not used
 
Bank1: bi t 3
 
T URBO:
 
DY CA LTURB O
 
S ect ion 
7. 10
 
0 = Dis abled
 
1 = E nabled
 
Bank1: bi t 2
-
0
 
BAS E : 
B as e V alue 
 
S ect ion 
9. 3
 
000 = 200
 
001 = 50 
 
010 = 75
 
011 = 100
 
100 = 150
 
101 = 250 
 
110 = 300
 
111 = 500 
 
Ta b l e 
3
.
3
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Pa rti a l AT I
 
t
HA LT 1
 
t
HA LT 0
 
M ULT
S E NS E 1
 
M ULT
S E NS E 0
 
M ULT
COMP 3
 
M ULT
COMP 2
 
M ULT
COMP 1
 
M ULT
COMP 0
 
bit  7
 
bit  0
 
Bank1:7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
MULT
: Mult iplier f orS ens it iv ity
 
S ect ion 
7. 6
 
00
 
01
 
10
 
11
 
Bank1: bi t 3
-
0
 
MULT: Mult iplierf or Compens at ion
 
S ect ion 
7. 6
 
0000 t o 1111
 
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Ta b l e 
3
.
4
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  2  (0x C6H)
 
STREAM
 
TRANS
 
CO MM S
 
ND
 
Tar get
 
ATI
 
LP
1
 
LP
0
 
bit  7
 
bit  0
 
Bank2: bi t 7
 
ST RE AM: 
St eami ng Met hod 
 
S ect ion 
8. 2
 
0 = 1
-
wire
 
1 = 2
-
wire (I
2
C)
 
Bank2: bi t 6
 
T RANS : 
Charge Trans f er Frequenc y 
 
S ect ion 
7. 7
 
0 = 512k Hz
 
1 = 250k Hz
 
Bank2: bi t 5
 
COMM S :
 
St reami ng
 
S ect ion 
8
 
0 = Dis abled
 
1 = E nabled
 
Bank2: bi t 4
 
ND:
 
Nois e Det ec t
 
S ect ion 
7. 3
 
0 = Dis abled
 
1 = E nabled (1
-
wire c omms  only )
 
Bank2: bi t 3
 
T arget:
 
A TI t arget c ounts
 
S ect ion 
7. 8
 
0 = 1200
 
1 = 1024
 
Bank2: bi t 2
 
ATI
: A TI S elec t ion
 
S ect ion 
7. 9
 
0 = Full 
 
1 = P art ial
 
Bank2: bi t 1
-
0
 
LP
: P owermode S elect ion
 
S ect ion 
7. 12
 
00 = BP , 9ms  (64ms if z oom is disabled) 
 
01 = NP,  128ms
 
10 = LP 1,  256ms
 
11 = LP 2,  512ms
 
Ta b l e 
3
.
5
: 
Us e r Se l ec ta bl e  
Con fi g u ra ti on  Opt io n s: Ba nk  3  (0x C7H)
 
~
 
~
 
~
 
~
 
Zoom
 
~
 
~
 
CTRL
 
bit  7
 
bit  0
 
Bank3: bi t 7
-
4
 
S ystem  Use
 
Bank3: bi t 3
 
Zoom : 
Zoom Dis able
 
S ect ion 
7. 13
 
0 = ZoomE nabled
 
1 = Zoom Dis abled
 
Bank3: bi t 2
-
1
 
S ystem  Use
 
Bank3: bi t 0
 
CT RL: 
Cont rolI nput  
 
S ect ion 
7. 1
 
0 = Halt Charge
 
1 = Filt er Halt
 
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4
 
Measuri ng 
C
a pacit ance 
U
sing th e 
Cha rge Tran sfer
 
M
etho d
 
The 
char ge 
t r ansf er
 
m ethod of  capacit ive 
sensing is em ployed onthe IQ S228AS/ B.
 
A char ge cycle is used to t ake a m easur em ent 
of t he capacit ance of t he sense elect r ode 
( connect ed t o Cx) r elative t o ground. It consist s 
of a ser ies of pulses char ging Cx and 
dischar ging 
Cxt ot her eferencecapacit or , at t he 
char get r ansf erf r equency( F
CX
 
-
 
r ef ert oSection 
11
) . Thenum ber of t hepulsesr equir edt or each 
a t r ip volt a
ge on t he refer ence capacit or is 
r efer r edt oast he 
Count  
value( CS) whichist he 
instant aneous capacit ive m easur ement . The 
Counts ( CS)  ar e used to det er m ine if  eit her a 
physical cont act  or proxim it y event  occurr ed, 
based on t he change in CS det ect ed. The 
t ypical values of CS, wit hout a t ouch or  
proxim it y condit ion r ange bet ween 1344 and 
1865 counts,  although higher and lower counts 
can be used based on t he application 
r equir ement s.  With CS larger t han +/
-
1865 t he 
gain of t he syst em  may become t oo high 
caus
ing unst eady oper ation.
 
The I Q S228AS/ B schedules a char ge cycle 
ever y t
SA MP LE
 
seconds t o ensure r egular 
samples f or  pr ocessing of r esult s.  The dur at ion 
of t he char ge cycle is def ined as t
CH A RGE
 
and 
variesaccordingt ot hecountsr equir edt or each 
t he tr ip 
volt age.  Following t he char ge cycle 
other activit ies such as dat a st r eam ing is 
completed ( if  in str eam ing m ode) ,  bef ore t he 
next  char gecycle is init iat ed.
 
Pl easenot e: A tt achingaprobet ot heCxpi n 
w il l i ncrease t he capacit ance of t he sense 
plat e and t h
eref ore C
S
.  T his may have an 
i mmediat e i nf l uence on t he Counts val ue 
( decrease t
CH AR GE
) and cause a proximit y or 
t ouchevent .
 
Af t er t
HA LT
 
secondst hesyst em will 
adj ust t o accomm odate f or t his change. I f t he 
t otal load on Cx,  wit h t he probe at t ached is st ill 
lowert hant hem aximumCxloadt hesyst emwill 
cont inuet of unct ionnor mallyaft ert
HA LT
 
seconds 
wit h t he probe att ached.
 
Fi g u re 
4
.
1
: 
Cha rge  cy cl e s a s ca n  b e s ee n  on  CX.
 
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Fi g u re 
5
.
1
: 
DYCAL  Ope ra ti o n (Se l f Capa c iti ve  Se ns in g )
 
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6
 
Operatin g Prin ciple
 
Figur e 5.1 is a visual r epr esent ation of  t he 
DYCAL f unct ionalit y. The O UT pin is used t o 
indicate t he st atus of a DYCAL event  ( bot h 
proxim it y a
nd a t ouch event) . The DYCAL 
f unct ionalit y is sum m ar ised below.  
 
Non
-
T ouch M ode
 
The O UT pin is act ivated on t he successf ul 
det ection of a pr oxim ity event and will r emain 
activat edf ort hedur ationoft heproxim it yevent , 
per m itt ing t hat  t his event is no lo
nger t han t he 
f ilt er halt  t im ings.  The LTA will be halt ed in t his 
t im e.
 
Assoonasat ouchcondit ionisdet ect ed( Count 
values, orCS, f allbelowT
T HR
) , t hecont r ollerwill 
dynamically r e
-
calibrat e it s LTA t o t he halted 
LTA 

T
T HR
.  The I C is now in TouchM ode. 
 
T ouch M ode
 
Af t er t he re
-
calibrat ion of t he LTA, it will f ollow 
t he Count s ( CS) and be allowed t o t r ack slow 
varying envir onm ent al changes. I f t he Counts 
( CS)  were t o exceed t he LTA by t he r elease 
t hreshold ( REL_T
T HR
) t he tou
ch det ect ion will  
st op and t he O UT pin will r etur n t o it s or iginal  
st ate.
 
7
 
Configur able S ettin gs 
 
This section descr ibes t he user  conf igur able 
opt ions oft heI Q S228AS/ B inm ore det ail. 
 
User progr amm able options are selected by 
conf igur ing t he O TP select ion
s. Please r ef er t o 
Section 
2.2. 2
 
f oranover viewoft heconf igur able 
sett ings.
 
7 .1
 
CT RL: Ex ternal Control
 
T he user has t he opt ion t o cont rol some  
parame
t ers of  t he I Q S228AS/B f rom an 
ext ernalsource. T heI Ccanbeusedindef au lt  
mode (CTRL unc onn ect ed) or t he user ca n  
use t he CT RL pin t o select  whet her t he 
mast er should halt  t he charge t ransf ers (i.e.  
st opoperat ion)ort ohal t LT A
 
f ilt ert rackingon  
t he
 
I Q S228AS/B.
 
7 .1 .1
 
Cha rge  Ha lt
 
I f  CT RL is sampled high f or lon ger t han  
T
EXT _H ALT,  
t he charge co nversion cycle w ill be  
halt ed,  once t h e current  conversion has be en  
complet ed.  T he devic e will rema in in t hi s  
st andby mode unt il t he CT RL line is sampled  
low 
aga in.  An aut omat ic reseed is perf ormed  
direct lyaf t erCT RLisreleasedt ocompensat e  
f or any enviro nment al changes w hich mi ght  
have occurred d uring t h e st andby mode.
 
7 .1 .2
 
Hal t LT A 
F
il te r
 
W hen conf igured in t his  mode,  CT RL can be 
used t o cont rol t he LT A halt  t i
mes when  
sampledhig h. T heCT RLpinhasprecedence  
over t he conf ig urat io ns bit s select ed f or t h e  
halt  t imings.
 
I f  CTRL is sam pled high f or longer  t han 
T
E X T _HA LT
,  t he f ilt er will be halt ed unt il t his pin is 
sampled low.
 
.
 
Fi g u re 
7
.
1
: 
Ma s te r Out p u t s ig na l  o n CTRL  p in  t o  Ha l t Op era tio n  o r Fi l te r Ha l t
 
7 .1 .3
 
P uls e  on CT RL:
 
T he pulse on t he CT RL pin needs t o adher e  
t o t he f ollowing t imin g const r
aint s:
 
25ms  <  T
PULSE 
<  35ms
 
7.1. 3. 1
 
I Q S228A S/ B:  Reseed
 
A reseed co ndit io n can be init iat e d by  
generat i ngap ulseo nt heCT RLpin. T heLT A  
will b e reset  t o t he coun t ,  f orcing t he O UT  pin 
t o it s original st at e.  
 
I f  t he count  value is out side it s allow abl e  
limits,  t he device will f orce an AT I  event  t o 
reset  t he syst em sensitivit y.  (Please ref er t o 
sect ion 
8. 1
 
f or more det ail).
 
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7.1. 3. 2
 
I Q S228A S/ B:  re
-
AT I
 
Ar e
-
ATIcondit ioncanbeinit iatedbygener at ing 
a pulse on t he CTRL pin. This f unct ion can be 
issued at anyt im e.
 
Fi g u re 
7
.
2
: 
Ma s te r Out p u t s ig na l  o n CTRL  t o fo rce  a  Res e ed Con d i ti o n
.
 
7 .2
 
LOG IC 
 
Thelogicusedbyt hedevicecanbeselectedas 
active HIG H or act ive LOW.  The out put  pins 
O UT and CTRL will f unct ion based on t his 
selec
t ion.  When conf igured as Act ive High, t he 
out put swillr emainhighaft er PO Runt ilATIhas 
completed.  The ATI t im e will vary accor ding t o 
t he capacit ive load on t he sensor,  but  t ypically 
does not exceed 500ms.
 
Co n f igu ratio n :  
Bank0
 
b it 5 :  Lo g icO u t p u t  
Sele ctio n
 
Bi t
 
Select i on
 
0
 
Soft ware O pen Dr ain Active Low
 
1
 
Act ive High 
 
Asoft war eopendrainout put isim plement edf or 
t he O UT pin when configured in active low 
m ode. The volt age on t he pull
-
up r esist or  is 
lim it ed t o t he 
I Q S228AS/ B supply volt age.  A 
4k7
-

is 
r ecomm ended.
 
7 .3
 
RF Nois e  on I QS 2 28 AS/ B 
 
7 .3 .1
 
ND: RF Nois e  De tec tion
 
The IQ S228AS/ B has RF Noise Detect ( ND) 
f unct ionalit y. I f ND f unct ion is enabled, t he 
I Q S228AS/ B is able t o detect RF Noise 
on t he 
TOUT/ ND pin. Furt her details on t he wor king of 
t his can be f ound in the Application Not es: 
AZD015 and AZD015b. 
 
Note:  ND input enable is a legacy input and is 
not  r ecomm ended f or  use in new designs. The 
input has been desensitized by def ault and 
is 
not t estedt otr iggerataspecif icRFinputpower 
level
 
7 .3 .2
 
IQ S 2 28 AS/ B RF Noise  I mmunity
 
TheI Q S228AS/ Bhasadvancedim m unit yt oRF 
noisesour cessuchasGSM cellulart elephones, 
DECT, Bluet oot h and WI FI  devices. Design 
guidelines should however be f ollowe
d t o 
ensure t he best noise im m unity.  The design of 
capacit ivesensingapplicationscanencom pass 
alarger angeof sit uat ionsbut asasum m ar yt he 
f ollowing should be not ed t o im prove a design:
 
>
 
Aground pla nesh oul db eplac edu ndert h e  
I C,  except  under t he 
Cx line.
 
>
 
All t he t racks on t he PCB must be kept as 
short  as possible.  
 
>
 
T he capacit or bet we en  VDDHI  and G ND  
as well as bet ween VR EG and G ND,  must  
be place d as close as p ossible t o t he I C.
 
>
 
A 100 pF capacit or should be place d in  
parall el wit h t he 1uF  capacit o
r bet wee n  
VDDHI andVSS.Anot her100pF capacit or  
can be p laced in par allel wit h t he 1 uF  
capacit or bet we en VRE G  and G ND.
 
>
 
I f  t he device is t oo sensit ive f or a specif ic  
orderopt ion,
 
aparas it iccapacit or(
t ypicall y
 
20pF ) can be added b et ween t he Cx line  
and
 
grou nd.
 
>
 
Proper sense elect rod e  and but t on desig n  
princip les must  be f ollo wed.
 
>
 
Unint ent i onal co upl ing of  sense elect rod e  
t o ground an d ot her  circuit ry must  be 
limited by increasin g t he dist ance t o t hese 
sources.
 
I n som e inst ances a ground plane som e 
dist an
ce fr om t he device and sense electr ode 
m ay provide signif icant  shielding f r om 
undesir ed inter f er ence. 
 
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When t he capacit ance bet ween t he sense 
electr ode and ground becom es t oo lar ge the 
sensit ivit y of t he devicem ay be influenced.
 
7 .4
 
P rox imi ty 
T hre s hold
 
T he 
I Q S228AS/ B
 
has 4 proximity t hreshol d  
set t ings indicat e d in c ount s.  T he proximity 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired sensit ivit y and noise immunit y.  A 
proximityevent ist rigge redif t heCount s(CS) 
diverges more t han 
t h e select ed t hreshol d  
f rom t he LT Af or 6 consecut ive cycles.
 
Conf i gurat i on:  
Bank0
 
bi t 1
-
0 
P
T HR 1
:P
T HR 0
: Proximi t yThresholds
 
Bi t
 
Select i on
 
00 
 
4
 
01 
 
2
 
( M ost sensit ive)
 
10 
 
8
 
11 
 
16
 
( Least sensit ive)
 
7 .5
 
T ouchT hre s hold
 
T he 
I Q S228AS/B has 8 t ouch t hreshol d  
set t ings indicat ed i n  count s.  T he t ouch 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired t ouch se nsit ivit y.  A t ouch event  is 
t riggered if  t he Count s  (CS) diverges more 
t han t he select ed t hres hold f rom t he LT A f or
 
2 consecut ive cycles
. 
 
I nt heNO
-
T O UCHst at et heCount s(CS)must  
diverge mor e t han t he t ouch t hresho ld val ue  
below
 
t he LT A. O perat ing in t he T O UCH  
ST AT E,  t he CS must diverge more t han 
REL_T
T HR
 
of  t he t ouch threshol d valu e 
abov e
 
t he LT A
.
 
The f ollowing equ
ation is used t o det erm ine if  a 
t ouch or r elease event  occurr ed.
 
NO  TO UCH STATE:
 
LTA
 
CS<=
 
T
T HR
 
TOUCH STATE:
 
CS 
-
 
LTA
 
>=
 
REL_T
T HR
 
Conf i gurat i on:  
Bank0
 
bi t 4
-
2T
T HR 2
:T
T HR 0
 
T ouchT hreshol ds 
 
T
T HR 2
:T
T HR 0
: 
Touch Thr esholds 
 
Bi t
 
Select i on
 
000 
 
72/ 256
 
001 
 
4/256( M ost sensit ive)
 
010 
 
8/256
 
011 
 
24/ 256 
 
100 
 
48/ 256
 
101 
 
96/ 256
 
110 
 
128/256
 
111 
 
160/256( Least sensit ive)
 
7 .6
 
Multipli e rs
 
Whenusingpar t ialATI,thebasevalueissetup 
using t he m ult ipliers.  Com pensat ion will st ill be 
add
ed aut om aticallyt oreach t he t ar get.
 
7 .7
 
Cha rge T ra ns fer
 
The char ge t r ansf er f r equency of t he 
I Q S228AS/ B is adj ustable. Changing t he 
t r ansf er f r equency will aff ect  sensit ivity and 
r esponser ate.  Two opt ions ar e available:
 
Conf i gurat i on:  
Bank2
 
bi t 6
 
T RA NS:
 
Char ge Tr ansf er  Frequency
 
Bi t
 
Select i on
 
0
 
512kHz
 
1
 
250kHz
 
7 .8
 
T a rge t Counts
 
The t arget  oft he ATI algorithm can be adj ust ed 
bet ween1200( def ault )and1024count s. When 
less sensit ivit y is r equir ed, t he lower counts wil
l 
also incr easer esponse rate:
 
Conf i gurat i on
: 
Bank2
 
bi t 3
 
T arget :
 
ATI t ar get counts
 
Bi t
 
Select i on
 
0
 
1200
 
1
 
1024
 
7 .9
 
E na ble P a rtial ATI
 
I n some applications t he st art up t im e of t he 
I Q S228AS/ B m ay be r equir ed t o be decr eased. 
This is 
possible by enabling par t ial ATI,  if  the 
m ult ipliers r equir ed can be det erm ined, and t he 
compensat ion alone is adequate t o account  f or 
envir onm ent al change.
 
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Conf i gurat i on:  
Bank2
 
bi t 2
 
AT I:
 
Par t ial ATI
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enab
led
 
7 .1 0
 
DYCAL T URBO
 
I n som e applications, it m ay be r equir ed t o 
im provet heent ryandexit speedofTouchM ode 
by r em oving t he ent ry r eseed delay, as well as 
t urning of f t he AC
-
f ilt er s. This can be done by 
enabling t he DYCAL TURBO m ode.
 
Conf i gurat i on:  
Bank1
 
bi t 3
 
T URBO:
 
DYCAL TURBO
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enabled
 
Notet hatifDycalTur boisenabled,t heLTAwill  
halt  at t he r eseed point for t
HA LT
 
if Touch M ode 
isent er edbef or eapr oxim it yevent isr egist ered.
 
7 .1 1
 
Filte r Ha lt
 
The 
LTA
 
f ilt
er only executes while no proxim it y 
events ar e det ect ed to ensure com pensat ion 
only f or envir onm ent al changes. O nce a t ouch 
eventisdet ect edt hef ilt erwillr esumeoper ation 
and will no longer  be halt ed.  The halt t im ing 
conf igur ation sett ings determ ine ho
w long t he 
f ilt er is halt ed.
 
Conf i gurat i on:  
Bank1
 
bi t 7
-
6
 
Bi t
 
Select i on
 
00 
 
20 seconds
 
01 
 
40 seconds
 
10 
 
Never
 
11 
 
3 seconds
 
T he presenc e of  a pro ximity condit ion f or a 
t ime exceeding t he halt  t ime will be deemed 
as a f ault  st at e which w ould t rigg er a resee d  
event whereaf t ert heou t put st at eont heO UT 
pin wil l be reset  t o it s original co ndit io n.  
 
7. 12
 
Low P owe r Modes  
 
There exist  4
 
LP m odes.  The LP m odes will  
decr ease t he sam pling fr equency of  CS which 
will r educe t he 
power consumpt ion
 
of  t he 
device. However , t his will also increase t he 
r esponset im e of t he device.
 
Conf i gurat i on:  
Bank2
 
bi t 1
-
0
 
Bi t
 
Select i on
 
00 
 
9.1m s ( BP)  64m s if  Zoom  disabled
 
01 
 
128ms( Norm al Power Mode)
 
10 
 
256ms 
( Low PowerM ode 1)
 
11 
 
512ms( Low PowerM ode 2)
 
7 .1 3
 
Zoom
 
The I Q S228AS/ B has t he opt ion t o disable t he 
zoom f unct ion. Thism eanst hat t hesam plet im e 
will st ay f ixed,  even when proxim ity and t ouch 
events are m ade. When t his is activat ed, boost 
power m ode 
will change fr om a 9m s sample 
t im e, t o 64m s.
 
Conf i gurat i on:  
Bank3
 
bi t 3
 
Zoom:
 
Zoom Disable
 
Bi t
 
Select i on
 
0
 
Enabled 
 
1
 
Disabled
 
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®
 
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8
 
Streami ng Mo de
 
F or a more complet e d escript ion of  t he dat a  
st reamingprot ocol, pl ea seref ert oApplicat
ion  
Not e AZ D017 on t he Azot eq websit e.
 
T heIQ S228AS/Bhast hecapabilit yt ost ream 
dat at oaMCU.T hisprovidest hedesignert he  
abilit y t o obt ain t he p a ramet ers and sensor  
dat a wit hin t he device in order t o aid design  
int oappl icat ions. Dat as t reamingis 
perf ormed  
as a 1
-
wire dat a prot ocol on t he O UT  pin O R 
I
2
Cint erf ace.T heout put f unct ionof t hispinis 
t heref orelost whent hedeviceisconf iguredi n  
st reaming mode.  Dat a Str eaming can be  
enab led as ind icat ed be low:
 
Conf i gurat i on:  
Bank2
 
bi t 5: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
Disabled 
 
1 
 
Enabled
 
Figur e 
8
.
1
 
illust rat es t he communicat io n  
prot ocol f or init ialisin g and sending dat a wit h  
t he 1 wire communicat i on prot ocol.  
 
1.
 
Communicat i ons init i at e d by a ST ART 
bit .  Bit  def ined as a lo w condit io n f or  
T
S
T ART
. 
 
2.
 
F ollowi ng t he ST ART  bit , is a 
synchronisat i on byt e (T
INI T
 
= 0xAA).  
T hisbyt eisusedbyt heMCUf orclock 
synchronisat i on.
 
3.
 
F ollowi ng T
I NIT
 
t he dat a byt es will be  
sent .  8 Bytes will be sent  af t er each 
charge cycle.
 
4.
 
Each byt e sent  wi ll be  precede d by 
a 
ST ART  bit  and a ST OP bit  will f oll ow  
every byt e.  
 
5.
 
ST O P bit  indicat ed by  t aking pi n 1  
high.  T he ST O P bit does not  have a 
def ined p eriod.
 
Fi g u re 
8
.
1
: 
D
e b ug : 1
-
wire  strea mi n g  De bu g  Mo d e
.
 
Thef ollowingt abledef inest hebitdef init ionsf or 
t he IQ S228AS/ B devices dur ing Str eam ing 
M ode.
 
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®
 
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Ta b l e 
8
.
1
: 
By te  De fin i tio n s f o rStre a mi n g  Mo de
 
Byt e (B)
 
Bit
 
Value
 
0
 
AA
 
1
 
7 :0
 
CS Hig h  by te
 
2
 
1 5 :8
 
CS L o w b y te
 
3
 
2 3 :1 6
 
L TA Hig h b y te
 
4
 
3 1 :2 4
 
L TA L o w by te
 
5  Sy s
 
Fl a gs
 
39
 
38
 
37
 
36
 
35
 
34
 
33
 
32
 
~
 
~
 
Ac ti ve  Hi gh
 
Fi l te r Ha l t
 
L P a c ti v e
 
ATI  Bu sy
 
Noi s e Fo u nd
 
In  Z o om
 
6
 
47
 
46
 
45
 
44
 
43
 
42
 
41
 
40
 
To u ch
 
Pro x im i ty
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
7
 
5 5 :4 8  
 
Com p e ns a ti o n 
 
8
 
6 3 :5 6
 
Cou n te r 
 
8 .1
 
E v e nt Mode
 
TheIQ S228AS/ BhasEvent M odeim plem ent ed 
dur ing 1
-
wir e comm unication. This allows t he 
M CU t o m onit or t he PO UT pin 
f or  st at us 
changes ( pr oxim ity or t ouch m ade or r eleased 
events) instead of  capt uring dat a cont inuously.  
Uponast at uschange,t heIQ S228AS/ Bwillpull 
t he PO UT pin f or  low t o indicate t o t he M CU t o 
r eaddat a.ThePO UTpinwillst aylowf or1.6m s.
 
8 .2
 
I
2
C
 
The I
Q S228AS/ B also allow f or I
2
C st ream ing 
f ordebugging.DataSt reamingcanbechanged 
f r om  1
-
wir e pr otocol t o I
2
C as shown below:
 
Conf i gurat i on:  
Bank2
 
bi t 7: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
1
-
Wire Pr otocol
 
1 
 
I
2
C St r eam ing
 
The M em ory M ap f or t he IQ S228AS/ B can be 
f ound in 
Appendix A
. 
 
The IQ S228AS/ B can comm unicat e on an I 2C 
 
ll
-
upr esist or sshouldbeplacedonSDAandSCL.
 
The Contr ol byt e indicates t he 7
-
bit device 
address ( 0x44H) and t he Read/Wr it e indicator 
bit .
 
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®
 
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9
 
Auto T uning Imp le mentatio n (AT I)
 
ATI is a sophist icated t echnology im plement ed 
in t he latest  
gener ation Pr oxSense
®
 
devices 
t hat  opt im ises t he per f orm ance of  t he sensor  in 
a wide r ange of applications and envir onm ent al 
condit ions (r efer  t o application not e AZD0027 
-
 
Auto TuningI m plem ent at ion) . 
 
ATI m akes adj ust ment s t hr ough ext ernal 
r efer ence capa
cit or s unnecessar y ( as r equir ed 
by m ost  ot her  solutions)  t o obt ain opt im um 
per f or m ance.
 
9 .1
 
Full AT I
 
The IQ S228AS/ B im plem ent s an aut om at ic ATI  
algor it hm. This algor it hm aut om atically adj ust s 
t he ATI par am eter s t o opt im ise t he sensing 
electr odes connect ion t o 
t he device.  
 
The device will execute t he ATI algor it hm 
whenever t he device st ar t s
-
up and or when t he 
counts ar e not wit hin a pr edeter m inedr ange. 
 
There are 2 im port ant  def init ions t o under st and 
f or ATI:
 
9 .2
 
AT IT a rge t
 
ATI adj usts int ernal cir cuit r y accor ding t o t wo 
par amet ers,  t he 
ATI multi pli er
 
and t he 
AT I 
compensati on
. 
 
>
 
The 
ATI mul ti pli er
 
can be viewed as a 
cour seadj ust m entoft heCounts( CS) ,used 
t o achieve t he ATI BASE value.  
 
>
 
The 
ATIcompensat i on
 
isaf ineadj ust
m ent 
used t o r eacht he ATI  TARG ET value. 
 
With t hese t wo par ameters t he Count s ( CS)  of 
t he IQ S228AS/ B is t uned unt il an ATI t ar get 
value of 1200 is achieved.
 
9 .3
 
AT I
BASE
: Si gnifica nc e of AT I Bas e
 
Asm ent ionedabove, t he 
ATImul ti pli er
 
isused 
t o select a base 
value f or t he ATI. The ATI 
BASEvalueisim port ant ,asthisdet erm inest he 
sensit ivit y of t he device.  The sensit ivit y can be 
def ined as:
 
Sensit ivit y = ATI TARG ET / ATI BASE
 
TheATITar getr emainsfixedat1200anditcan 
t hus be seen f r om t his t hat a large
r  base value 
will r esult  in a less sensit ive device.  The 
designer has t he opt ion t o incr ease/r educe the 
sensit ivit y of t he syst em  t hrough t he ATI BASE 
value.  For  m ost  applications t he ATI BASE 
should be kept  def ault .
 
The opt ions f or  t he ATI BASE values are
 
as 
f ollows:
 
Conf i gurat i on:  
Bank1
 
bi t 2
-
0
 
Bi t
 
Select i on
 
000
 
200
 
001
 
50
 
010
 
75
 
011
 
100
 
100
 
150
 
101
 
250
 
110
 
300
 
111
 
500
 
9 .4
 
S e ns itivity  
D
ue  to ATI 
 
Theadj ust m ent of t heATI par am et erswillr esult  
in variat ions in t he count and sensit ivi
t y. 
Sensit ivit y can be observed as t he change in 
count as t he r esult of a 
f ixed
 
change in sensed 
capacit ance. The ATI param et ers have been 
chosen t o provide signif icant over lap.  I t m ay 
t her ef ore be possible t o select var ious 
combinat ions of  ATI m ult iplier and ATI  
compensat ion set t ings to obt ain t he sam e 
count. Thesensit ivit yof the 
variousopt ionsm ay 
however  be dif f er ent f or the same count . 
 
9 .5
 
AT I P roc e dure
 
Whilet heAutom aticATIalgor it hmisinprogr ess 
t his condit ion will be indicated in t he st r eam ing 
dat a and pr oxim ity and touch event s cannot  be 
det ected.  The device will only brief ly r emain in 
t his condit ion and it will be ent er ed only when 
r elatively lar
ge shift s in t he count has been 
det ected.
 
The aut om atic ATI f unct ion aim s t o m aintain a 
const antcount,r egar dlessoft hecapacit anceof  
t hesenseelectr ode( wit hint hem axim umr ange 
oft he device) . 
 
The eff ect s of aut o
-
ATI on t he application ar e 
t hef ollo
wing:
 
>
 
Aut omat ic adj ust ment  of  t he devic e  
conf igurat io n and processing paramet er s  
f or a wide range of  P CB and app licat io n  
designst omaint ai naopt imalconf igurat i o n  
f or proximity and t ouch det ect ion.
 
>
 
Aut omat ic t uning of  t he sense elect rod e at  
st art
-
up t o o
pt imise t he sensit ivit y of  t he 
applic at ion.
 
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>
 
Aut omat ic re
-
t uning when t he devic e  
det ect s changes in t he sensing elect rod es  
capacit ance t o acco mmodat e a large  
rangeof chang esint heenvironme nt of t he 
applic at ion t h at  inf lue nces t he sensi n g  
elect rode.
 
>
 
Re
-
tu
nin g on ly occur s during devic e  
operat io nwhenarelat iv elylargesensit iv it y  
reduct ion is det ect ed.  T his is t o ensure  
smoot h operat ion of  the device durin g  
operat io n.
 
>
 
Re
-
t unin g may t emporarily inf lue nces t he  
normal f unct ioni ng of  the device,  but  in  
most  in
st ances t he ef fect  will be hardly  
not iceab le.
 
>
 
Short lyaf t ert hecompletionof t here
-
t unin g  
process t he sens it ivit y of  a Proximity  
det ect ionmaybereduc edslight lyf oraf ew 
seconds as int erna l f ilt e rs st abilises.
 
Autom at ic ATI can be im plement ed so 
eff ec
t ively duet o:
 
>
 
Excellent  syst em signal t o noise rat i o  
(SNR).
 
>
 
Eff ect ive digit al sign al processing t o  
remove AC and ot her n oise.
 
>
 
T he very st able core of t he devices.
 
>
 
T he built
-
in ca pab ilit y t o accommodat e a  
large ran ge of  sensing e lect rod e  
capacit ances.  
 
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®
 
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10
 
DYCAL Specifi c set tings
 
1 0 .1
 
Rel e as e T hres hold
 
TheIQ S228AS/ Bhast heopt iont oincreaset hereleaset hresholdwheninTM. Thishelpst hatsm all 
variat ions caused by m oving a f inger/ hand on a touch pad will not cause the I C t o exit TM
, m aking 
t he solution m or er obust . The opt ions available are shown below:
 
Conf i gurat i on:  
Bank0
 
bi t 6
 
Bi t
 
Select i on
 
0 
 
75% of  Ent r y Delt a
 
1 
 
87. 5% of Entr y Delt a
 
Af t er ent er ing TM,  as soon as t he LTA f ollows t o wit hin 16 counts,  a Ent r y Delt a value is calculated 
as:
 
>
 
Entr y Delt a=LTA
entry
 
-
 
LTA
cur re nt
 
This calculated Entr y Delt a value is used f or t he Release Threshold as shown above.
 
I f  upon entr y,  t he LTA value is 
alr eady wit hin 16 Counts,  t he Ent r y Delt a is t aken as t he calculated 
t oucht hreshold value.
 
1 0 .2
 
Input E na ble
 
TheIQ S228AS/ Bcanbeconf igur edt ohavet heCTRLpinf unct ionasanout putonaPr oxim it yevent.
 
Choosing t he CTRL pin as out put r emoves t he Filt er Ha
lt  and Halt Char ge opt ions of t he pin as an 
input.
 
Using a t ouch event  t o act ivate O UT will m ake t he syst em  less sensit ive which is needed in some 
applications. The LTA will st ill halt  wit h t he det ect ion of a pr oxim it y but  will not  have an 
inf luence on 
t heO UT pin. The LTA will st ill r e
-
calibrat e once at ouch condit ion is det ected.
 
Conf i gurat i on:  
Bank0
 
bi t 7
 
Bi t
 
Select i on
 
0 
 
O utput
 
1 
 
I nput
 
IQ  Sw it ch
®
 
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®
 
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11
 
Electric al Sp ecific a tions
 
1 1 .1
 
Abs olute Ma x imum 
Spe c ifica tions
 
Exceeding t hesemaximum specif i cat i ons may cause damaget ot hedevice
.
 
O per at ing t em per atur e
:
 
I Q S228AS
 
-
20°Ct o 85°C
 
I Q S228B
 
-
4
0°Ct o 85°C
 
Supply Volt age ( V
DDHI
 
V
SS
)
 
3.6V
 
M axim um  pinvolt age(OUT, CTRL)
 
V
DDHI
 
+ 0.
3
V
 
Pin 
volt age ( Cx)
 
1.7V
 
M inim um pin volt age ( VDDHI ,  VREG, O UT, CTRL, Cx)
 
V
SS
 
-
 
0.
3
V
 
M inim um power
-
on slope
 
100V/ s
 
ESD prot ect ion ( VDDHI, VREG ,  V
SS
, O UT, CTRL, Cx)
 
8kV
 
1 1 .2
 
Ge ne ral Cha rac teri s tic s
 
I Q S228AS/ B devices ar e r at edf or supply volt ages bet ween 1.8V and 3
. 6V.  
 
Ta b l e 
11
.
1
: 
IQS2 28 AS/B Gene ra l  Ope ra ti ng  Co nd i tio n s
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
T YP
 
MAX
 
UNIT
 
Su p p ly  vo l tag e
 
V
DDHI
 
1.
8
 
3 .3
 
3 .6
 
V
 
In te rn al  reg u l ato r ou tp ut
 
DDHI 
 
V
REG
 
1 .6 4
 
1 .7
 
1.
75
 
V
 
Bo o s t Po wer o pe ra ti n g c u rren t 
 
DDHI 
 
I
IQ S2 2 8 AS/B_ BP
 
120
 
129
 
135
 
˛
A
 
Norm a l  Po wer op e ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ NP
 
4 .9
 
6 .4 5
 
8 .1
 
˛
A
 
L o w p o wer1  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B
 
L P1
 
2 .9 5
 
3 .8
 
4 .8 5
 
˛
A
 
L o w 
p o wer2  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ L P2
 
1 .8 8
 
<2 .5
1
 
3 .2
 
˛
A
 
C
x
 
p i n c a p ac i ta n ce
 
DDHI 
 
C
C
xL o a d
 
120
 
pF
 
Char ge Transf er  Tim ings f or  low powerm ode isf ound in 
Section 
7.12
.
 
Ta b l e 
11
.
2
: 
Sta rt
-
u p a n d s h u t
-
d o wn sl o pe  Ch a rac te ri s ti cs
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
MAX
 
UNIT
 
POR
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
POR
 
0 .3
2
 
1.
7
 
V
 
VDDHI 
re s e tl e ve l
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VDDHI
 
N/A
 
1 .7
 
V
 
VREG
 
re s e t le v el
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VREG
 
N/A
 
1 .5 8
3
 
V
 
1
 
Al l l ow p ower c urr en t v al ue s  aris e fr om 
c h arac teriz a tio n do ne fro m (
-
) 35°C  to ( + ) 8 5°C a t 3. 3V.
 
2
 
F or a p ower c y c le,e ns ure lower ing  VDD HI b el ow th e min im um v a lue  bef ore r a m pin g VD DHI pas t th e 
max im um PO R v a lue
 
3
 
F igur e  
2
.
4
 
Cap ac itors  C 1 & C3 s h ou ld be c hos e n to  c omp ly  wit h th is  s pec if ic at io n
 
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®
 
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1 1 .3
 
Output Cha ra c teri s tics
1
 
Ta b l e 
11
.
3
: 
TOUT Cha ra c te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S INK  
 
O utput  Low 
volt age
 
100mV
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
100mV
 
V
DDHI
 
= 3.3V
 
10
 
100mV
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
4
: 
POUT Ch a rac te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.1V
 
V
DDHI
 
= 3.3V
 
10
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
5
: 
Comb i ne d  Cha ra cte ri s ti cs
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
17
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.V
 
V
DDHI
 
= 3.3V
 
20
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
1
 
I/ O sink capabilit ies only in Act ive Low conf igur ation. I /O sour ce capabilit ies only in Act ive High 
conf igur ation.
 
IQ  Sw it ch
®
 
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®
 
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1 1 .4
 
P a c ka ging I nforma tion
 
1 1 .4.1
 
T S OT2 3
-
6 
 
Fi g u re 
11
.
1
: 
TSOT2 3
-
6  Pac k ag i n g
1
 
Ta b l e 
11
.
6
: 
TSOT2 3
-
6  Di me nsi o n s
 
Dimen sion
 
Min ( mm )
 
Max (m m)
 
A
 
2 .6 0
 
3 .0 0
 
B
 
1 .5 0
 
1 .7 0
 
C
 
2 .8 0
 
3 .0 0
 
D
 
0 .3 0
 
0 .5 0
 
E
 
0 .9 5  Bas ic
 
F
 
0 .8 4
 
1 .0 0
 
G
 
0 .0 0
 
0 .1 0
 
H
 
0 .3 0
 
0 .5 0
 
I
 
0°
 
8°
 
J
 
0 .0 3
 
0 .2 0
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.2
 
WLCS P
-
8
 
Fi g u re 
11
.
2
 
IQS2 2 8 B W L CSP
-
8  Di me n si o ns  (i n mm)
 
Top view
 
Bott om  view
 
Side
 
view
 
P i n 1
 
m
arki ng
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.3
 
DFN
-
6
 
DFN
-
6 Packaging
 
DFN
-
6 Dim ensions 
 
Dimen sion
 
Min
 
Max
 
A
 
3 .0 0m m
 
3 .0 0m m
 
B
 
2 .5 0m m
 
2 .5 0m m
 
C
 
0 .3 0m m
 
0 .3 0m m
 
D
 
0 .3 5m m
 
0 .3 5m m
 
E
 
1 .3 0m m
 
1 .3 0m m
 
F
 
2 .2 0m m
 
2 .2 0m m
 
G
 
0 .0 5m m
 
0 .0 5m m
 
H
 
0 .7 5m m
 
0 .7 5m m
 
I
 
0 .8 0m m
 
0 .8 0m m
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.4
 
MS L Le v e l
 
M oist ure Sensi ti vit y Level
 
(M SL) r elates t o t he packaging and handling precautions f or some 
semiconductor s. TheM SLisanelectr onicst andardf ort het im eper iodinwhicham oist ur esensit ive 
device can be exposed to ambient r oom condit ions ( appr oxim at ely 30°C/85%RH see J
-
STD033C 
f
or m or e inf o)  bef ore r ef low occur.
 
Pac kag e
 
L evel( d u r atio n )
 
TSOT2 3
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
WL CSP
-
8
 
Non
-
e n ca ps u l ate d d e vi ce  

not m o is tu re  se n si tiv e
 
Ref l o w p rofi le  p ea k  
te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
DFN
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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12
 
Datash eet an d Part
-
number I nform ation
 
1 2 .1
 
Orde ring Informa tion
 
O r der swillbesubj ectt oaMO Q(M inim umO r der Q uantity) of af ullr eel. Contactt heoff icialdist r ibut or  

www. azot eq. co
m
. 
 
For  large order s, Azoteqcan provide pre
-
conf igured devices. 
 
ThePart
-
num ber canbegener atedbyusingUSBPr og. exeor t heI nt eract ivePart Num ber gener ator 
on t he websit e. 
 
I C NAM E
 
I Q S228AS
 
=
 
I Q S228 Self  Capacit ive
 
I Q S228B
 
=
 
I Q S228 Self  
Capacit ive
 
CO NFIG URATIO N
 
zzz zzz zz
 
=
 
I C Conf igur at ion( hexadecim al)
 
PACKAG E TYPE
 
TS
 
=
 
TSO T23
-
6 package
 
C
S
 
=
 
WLCSP
-
8 package
 
DN
 
=
 
DFN
-
6 package
 
BULK PACKAG I NG
 
R
 
=
 
Reel 
 
TSO T23
-
6 andWLCSP
-
8: 
3000pcs/ r eel
 
DFN
-
6: 6000pcs/r eel
 
=
 
M OQ = 1r eel 
( or der s shipped asf ull r eels)
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .2
 
Dev ice  Ma rk ing 

T op
 
1 2 .2.1
 
T S OT2 3
-
6 P a ck a ge Ma rk ings
 
There ar e 2 m ar king versions in circulation f or I QS228AS
 
and IQ S228B
:
 
Fi g u re 
12
.
1
:
Fi rs t Ma rki n g  Va ria n t o fIQS2 2 8 AS
 
Fi g u re 
12
.
2
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 AS
 
Fi g u re 
12
.
3
: 
Fi rs t Ma rk i n g Va ria n t o fIQS2 2 8
B
 
Fi g u re 
12
.
4
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 B
 
I C NAM E
 
228A
 
=
 
I Q S228AS Self Capacit ive
 
22
-
A
 
=
 
I Q S228AS Self Capacit ive
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 
t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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AS /B  Dat as heet  
 
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Marc h 2022
 
1 2 .2.2
 
WLCS P
-
8  P a ck a ge Ma rk ings
 
Fi g u re 
12
.
5
 
To p Ma rk in g  o f I QS2 2 8 B W L CSP Pa ck a g e
 
I C NAM E
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 

ZZ
 
I C VERSI O N
 
V
 
Product Code
 
PPP
 
1 2 .2.3
 
DFN
-
6  P a c ka ge  
Ma rk ings
 
Fi g u re 
12
.
6
 
IQS2 2 8 B
 
DFN
-
6  Pa c ka g e  To p  Ma rk i n g
 
I C NAM E
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .3
 
T a pe  
a nd Ree l 
S pe c ific a tion
 
Fi g u re 
12
.
7
: TSOT2 3
-
6  T ap e Sp e c ifi ca ti on .
 
Ta b l e 
12
.
1
 
Ta pe  a nd  Re el  Di me n s io n s
 
Dev ic e
 
P ack age
 
Ty pe
 
P ack age
 
D ra wi ng
 
P ins
 
QTY  
per 
reel
 
Reel
 
Di a m ete r
 
(mm )
 
Reel
 
Wi dth
 
W1 (mm )
 
A0
 
(mm )
 
B0
 
(mm )
 
K0
 
(mm )
 
P1
 
(mm )
 
W
 
(mm )
 
P in1
 
Quadrant
 
I QS2
2
8
AS
z zzz zzz zTS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz TS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3
000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz CS R
 
WLCS P 8
 
WLCS P
-
8
 
8
 
3000
 
17 9
 
8. 4
 
1
 
1 . 5 5
 
0. 48
 
4
 
8
 
Q3
 
I QS228Bzz zzz zzz DNR
 
DFN6
 
DFN
-
6
 
6
 
6000
 
330
 
12. 4
 
2. 8
 
3. 3
 
1. 2
 
4
 
12
 
Q1
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Appendi x A.
 
Memory  Map
 
Device Inform ation
 
[ 00H]  PRO D_NR
 
The pr oduct  num berf or the IQ S228A is 39 ( decimal) .
 
[ 01H]  SW_NR
 
Thesof t war eversionnum beroft hedeviceRO Mcanber eadint hisbyte.Thelatestsof t wareversion 
is 29 ( decim al) .
 
[ 10H]  SYSFLA G S0 
 
Bit  7
-
6:  
 
SYSTEM _USE
 
Bit  5: 
 
Logic: 
LogicO utput I ndication
 
0 = Act ive Low
 
1 = Act ive High
 
Bit  4: 
 
Halt :
 
I ndicat es Filt er  Halt st at us
 
0 = LTA not  being Halt ed
 
1 = LTA Halt ed
 
Bit  3: 
 
LP:
 
Low PowerM ode
 
0 = Samplet im e BP
 
1 = Samplet im e LP
 
Bit  2: 
 
ATI:
 
St atus of  aut omat ed ATI r out ine
 
00H
 
Pro d u ct Nu mb e r ( P RO D_ NR)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
39 ( Decim al)
 
R
 
Note
 
01H
 
So f t w are Num b er ( S W_ N R)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
29 ( Decim al)
 
R
 
Note
 
10H
 
Syst em  Flag s (
Sy s_F lag s )
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
~
 
Logic
 
Halt
 
LP
 
ATI
 
ND
 
Zoom
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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0 = ATI is not busy
 
1 = ATI in progr ess
 
Bit  1: 
 
ND:
 
This bit indicatest he pr esence of noise int erf erence.
 
0 = I C has not  det ectedthe presence of  noise
 
1 = I C has det ected t hepresence of  noise
 
Bit  0: 
 
ZOOM : 
Zoom  will indicate f ull
-
speed char ging once an undebounced proxim it y is 
det ected. I n BP m ode, t his
 
will not  changet he charging fr equency.
 
0 = I C not zoom ed in
 
1 = I C det ect ed undebounced pr oxim it y andI C ischar ging at f ull
-
speed ( BP)
 
[ 31H]  St atus
 
Bit  7: 
 
Dycal:  
Dycal Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  6:2:  
 
SYSTEM _USE
 
Bit  1: 
 
Touch: 
Touch Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  0: 
 
Prox:
 
Pr oxim it y Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
31H
 
St atu s
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
DYCAL
 
Touch
 
Pr oxim it y
 
R
 
Note
 
42H
 
Co u n t s_Hig h  ( CS _H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts High Byt e
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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8
AS /B  Dat as heet  
 
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43H
 
Co u n t s_L o w  ( CS_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts Low Byt e
 
R
 
Note
 
83H
 
L T A_High  ( L T A_H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age High Byt e
 
R
 
Note
 
84H
 
L T A_Lo w  ( L T A_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age Low Byt e
 
R
 
Note
 
C4H
 
F u se Bank  0( F B_ 0)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
1
 
f or m ore details
 
R
 
Note
 
C5H
 
F u se Bank  1( F B_ 1)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
2
 
f or m ore details
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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8
AS /B  Dat as heet  
 
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Marc h 2022
 
[ C8H]  
Defaul t CommsPoint er
 
Thevaluest or edint hisregist erwillbeloadedintot heCom msPointer at t hest ar tofacom m unicat ion 
window.  For  example, if  t he design only r equir es t he Pr oxim it y St at us inf or m at ion each cycle,  t hen 
t he 
DefaultCom m sPointer
 
. Thiswouldm eant hatatt hest ar tofeach 
comm unicat ion window, t he comm s pointer would alr eady be set t o t he Pr oxim it y St at us r egist er, 
sim ply allowing a READ t or etr ieve t he dat a, wit hout t he need of set t ing up t he address.
 
C6H
 
F u se Bank  2( F B_ 2)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See
 
Table 
3
.
4
 
f or m ore details
 
R
 
Note
 
C7H
 
F u se Bank  3( F B_ 3)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
5
 
f or m ore details
 
R
 
Note
 
C8H
 
DEF AUL T _CO MM S_ PO IN T ER
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
( Beginning of Device Specif ic Data)
 
R/ W
 
Default
 
10H
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Marc h 2022
 
Appen dix B.
 
Errata
 
Filte r 
H
a lt 
T
ime s
 
W

bit isset, t hehalt t im esasspecif iedinSection 
3
 
willbescaled16xlonger,  
due t o added dead t im ewhen t heI C 
cor e is t ur ned off t or educe power  consum ption:
 
Us er Se lec tab le Conf ig urati on O pt ions : Ba nk  1 

F ul l A T I (
0x C5H
)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 320s ec onds
 
01 = 640s ec onds
 
10 = Nev er
 
11 = 48s ec onds
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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Marc h 2022
 
Appendi x C.
 
Contact I nform atio n
 
V
isit  
www. azot eq. com
 
f or a list of 
dist r ibut ors and worldwide r epr esent at ion.
 
USA
 
A sia
 
Sout hA f ri ca
 
Physical 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
1 Bergsig Avenue
 
Paar l
 
7646
 
Sout h Afr ica
 
Post al 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
PO  Box 3534
 
Paar l
 
7620
 
Sout h Afr ica
 
T el
 
+1 512 538 1995
 
+86 755 8303 5294
 
ext 808
 
+27 21 863 0033
 
Emai l
 
info@azoteq.com
 
info@azoteq.com
 
info@azoteq.com
 
P
ate nts  
as  l is ted  on  
www. a z oteq.c om /pat ents
-
tr ad ema r k s /
 
may  
r elate  to t he dev ic e or  us ag e of  the  dev ic e
.
 
Az oteq
®
,Cr y s tal Dr iv er

,IQ Sw itc h
®
,Pr ox S ens
e
®
,Pr ox F us ion
®

log o ar e tr ade mar k s  of Az o teq.
 
T h e  in fo r m atio n  in t h is Data sh e e t is b e lie ve d  to  b e a ccu r a te  a t t h e tim e o f p ub lica tio n . Azo te q  u se s r e a son a b lee ff o rt to m a
inta in th e in form a tio n  up
-
to
-
d a te a n d a ccu ra te ,b u t do e s 
n o twarr a n tth e a ccu r a cy,co m p le te n e sso rr e lia b ilityo fthe inf or m a tio n c

o r  warr a n tie s, e xpr e ss or  imp lie d , of a n y kind , inclu d ing  r e pr e se n tatio n s ab o u t th e  su ita b ility o f the se  pr o d u cts o r inf or m a t
ion  for  a n y p ur po s
e .  Azo teq  d iscla im s a ll war r a ntie s a nd 
co n d ition s with  r e g ar d  to  th e se  pr o d u cts a nd  inf o r m a tio n , inclu d ing  b u t no t lim ite d  to  a ll im plie d  war r a n tie s a nd  co n d ition s 
o f m er ch a n ta b ility,  fitn e ss fo r  a  p a r ticu lar  p u r p o se , title 
a n d  n o n
-
infr ing em e n t o f a n y th i
r d  pa r ty int e llectu a l p r o p er ty r igh ts.  Azo te q  a ssum e s n o  lia b ility fo r  a n y d a m a g e s o r  injur y a r isin g  fr om  a n y u se  o f th e  inf o
r m a tion  o r  th e  p r od u ct o r 
ca u se d  b y, with o u t lim ita tio n , fa ilu r e o f pe r form a n ce , e r r or , om issio n , inte r ru p tio n , d e fe ct, de lay in o p
e r a tio n o r tr a n sm issio n , e ve n  if Azo te q  h a s b e e n  a d vised  o f th e p o ssibility of 
su ch  d a m a ge s. T h e  ap p lica tio n s m en tio n e d  he r e in a r e  u se d  so lely fo r  the  p u r po se  o f illustr a tio n  a n d  Azo teq  m a ke s n o  war r a n ty 
o r  r e pre se n ta tio n  tha t su ch  a p p lica tio n s will b e 
su i
ta b le with o u t fur th er  m o d ificatio n , n or  r e com m e n d s th e  u se  o f its pr o d u ctsfo r  a pp lica tio n t h a t m a y pr e se n t a r isk to  h um a n  l
ife  d ue  t o m a lfu n ctio n  or  o th er wise . Azo te q  pr o d u cts 
a r e  n o t au th o r ized  fo r  u se  a s cr itical com p o ne n ts in life  su p p or t d e vices or  s
yste m s. No  lice n se s to  p a te n ts a re  g r a nte d , im p licitly, e xp re ss o r  im p lie d , b y e sto p pe l o r  o the r wise, 
u n d e r a n y inte lle ctu a l p r o pe r ty r igh ts.  In th e e ve n t tha t a n y o f th e  a b o vem e n tio n ed  lim ita tio n s o r e xclusio n s d o e s n o t a p p ly
 
to ta l lia b ility fo r  a ll losse s, 
d a m a g e s an d  ca u se s o f a ction  ( in co n tr a ct,  to r t ( inclu d ing  witho u t lim ita tio n , ne g lig e n ce)  or  o th e r wise)  will n o t e xce e d  th e  
am o u n t a lre ad y p a id b y th e  cu sto me r  fo r  th e  p r od u cts.  
Azo te q  r e se r ve s the  r igh t to  a lter  its p r o d u
cts, to  m a ke  co r r e ctio n s, d e let ion s, m o d ificat ion s, e n h a n ce m en ts,  im p ro ve m en ts a n d  o th er  ch an g e s to  th e  co n ten t a n d  inf o rm a ti
o n, its 
p r o d u cts, p ro g r am s an d  ser vices a t an y time  o r  to m o ve  or  d iscon tin u e a n y co n te nts,  pr o d ucts,  p r og r am s or  ser vices with ou t 
pr ior n o tificatio n . Fo r  t h e  m o st u p
-
to
-
d ate  info r m ation 
a n d  b ind ing T er m s a nd  Co n d ition sp lea se r e fer  t o
 
www.a zo teq .co m
.
 
i nfo@azoteq. com
 
",Weight,Not Found
" 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
I QS22
8
AS /B  Dat as heet  
 
P age 
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of  
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4
1
 
Marc h 2022
 
IQ S228A
S
/B D AT ASHEET
 
Single channel capacit ive pr oxim it y 
 
and t ouch cont r oller
 
The Pr oxSense
®
 
IQ S228A S/ B
 
is a single channel self
-
capacit ive sensor wit h Dynam ic Calibrat ion 

Feature s
 
>
 
1 Self  capacit ive channel
 
>
 
>
 
Pr oxim it y and Touch output s
 
>
 
Autom at ic Tuning
 
>
 
I nter nal Refer ence Capacit or
 
>
 
M inim um exter nal com ponent s 
 
>
 
1
-
Wire dat a str eam ing 
 
>
 
I
2
C Debug opt ion
 
>
 
User selectable opt ions (O TP):
 
>
 
Ext  sync cont r olor Ext f ilt er contr ol
 
>
 
I /O  Sink or  Sour ce selection
 
>
 
Tim e
-
out f or st uck key
 
>
 
Pr oxim it y and Touc
h sensit ivit y selections
 
>
 
Low Power
 
m odes
 
>
 
Low powerm ode 2. 5

A 
 
>
 
Supply volt age: 1.8V t o 3. 6V 
 
Applicati ons
 
>
 
Pr oxim it y sensors
 
>
 
SAR det ectionf or  Tablets
 
>
 
On
-
ear  det ection f or m obile phones
 
>
 
3D glasses
 
>
 
Personal M edia Player s
 
>
 
Whit e goods and appliances
 
>
 
HumanI nter f ace Devices
 
>
 
Pr oxim it y activat ed backlight ing
 
Ava il a ble  O ptions
 
T
A
 
T SO T 23
-
6
 
WL CS P
-
8
 
DF N
-
6
 
-
20
°
C t o 85
°
C
 
I Q S228AS
 
-
 
-
 
-
40
°
C t o 85
°
C
 
I Q S228B
 
I Q S228B
 
I Q S228B
 
R oH S2
 
Com pl i ant
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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I QS22
8
AS /B  Dat as heet  
 
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Contents
 
I QS 22 8AS /B DA TAS HE E T
 
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1
 
1 OVE RV IE W
 
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5
 
1.1
 
D
E V I CE
 
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5
 
1.2
 
O
P E RATI ON
 
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5
 
1.3
 
A
P P LI CA BI LITY
 
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5
 
2 PACKA GIN G A ND P IN
-
OU T
 
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6
 
2.1
 
IQ S2 28 AS/ B
 
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6
 
2.1.1  P in
-
ou t TSOT 2 3
-
6
 
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6
 
2.1.2  P in
-
ou
t W LC SP
-
8
 
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7
 
2.1.3  P in
-
ou t DFN
-
6
 
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8
 
2.2
 
S
CHE MA TI C
 
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9
 
2.2.1  TSO T 23
-
6
 
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9
 
2.2.2  W LCS P
-
8
 
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10
 
2.2.3  DF N
-
6
 
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11
 
3 U S E R CON FI GURA BLE  OPT IONS
 
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12
 
3.1
 
C
ONFI GURI NG 
D
EV I CE S
 
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12
 
3.1.1  IQ S2 28 AS/ B Us er 
Se lec tab le O pti ons
 
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12
 
4 ME A S URIN G CAPA CI TAN CE US IN G T HE  
C HA RGE T RANS FER
 
ME TH O D
 
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15
 
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16
 
6 OPE RA TIN G PR INC IPLE
 
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17
 
7 CO NFI GURA BLE  S E TTIN GS
 
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17
 
7.1
 
CT RL:
 
E
XTE RNA L 
C
ONTROL
 
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17
 
7.1.1  Char g e H alt
 
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17
 
7.1.2  Ha lt LT A Fi lter
 
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17
 
7.1.3  Pu ls e 
o n CTR L:
 
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17
 
7.2
 
LO G IC
 
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18
 
7.3
 
RF
 
N
OI S E ON 
IQ S228AS /B
 
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18
 
7.3.1  ND: RF  Nois e Det ec ti on
 
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18
 
7.3.2
 
IQ S2 28 AS/ B RF  Nois e Im mun ity
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18
 
7.4
 
P
ROXI MI TY  
T
HRE S HOLD
 
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............................
 
19
 
7.5
 
T
OUCH 
T
HRE S HOLD
 
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................................
.
 
19
 
7.6
 
M
ULTI P LI E RS
 
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19
 
7.7
 
C
HA RGE 
T
RA NS FE R
 
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.
 
19
 
7.8
 
T
A RGET 
C
OUNTS
 
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.....
 
19
 
7.9
 
E
NA B LE  
P
A RTIA L 
AT I
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19
 
7.10
 
DY CA L
 
T URBO
 
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20
 
7.11
 
F
I LTE R 
H
A LT
 
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20
 
7.12
 
L
OW 
P
OWE R 
M
ODE S
 
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20
 
7.13
 
Z
OOM
 
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20
 
8 S T RE A MIN G M ODE
 
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21
 
8.1
 
E
V E NT 
M
ODE
 
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22
 
8.2
 
I
2
C
 
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22
 
9 A U TO TU NING IM PLE ME NTAT I
O N (A TI)
 
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23
 
9.1
 
F
ULL 
AT I
 
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23
 
9.2
 
AT I
 
T
A RGET
 
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23
 
9.3
 
AT I
BAS E
:
 
S
I GNI FI CA NCE OF 
AT I
 
B
A SE
 
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........
 
23
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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AS /B  Dat as heet  
 
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9.4
 
S
E NS I TIV I TY  
D
UE  TO 
AT I
 
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23
 
9.5
 
AT I
 
P
ROCE DURE
 
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23
 
1 0 DY CA L S PE C IFI C S E TTI NGS
 
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25
 
10.1
 
R
E LE A SE  
T
HRES HOLD
 
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25
 
10.2
 
I
NP UT
 
E
NA B LE
 
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25
 
1 1 E LE CTR ICA L S PE CIF I CA TI ONS
 
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26
 
11.1
 
A
B S OLUTE  
M
A XIMUM 
S
PE CI FI CA TI ONS
 
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....
 
26
 
11.2
 
G
E NE RA L 
C
HA RA CTE RI STI CS
 
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26
 
11.3
 
O
UTP UT 
C
HA RA CTE RIS TI CS
 
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27
 
11.4
 
P
A CK A GI NG 
I
NFORMA TION
 
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28
 
11.4. 1 TSO T 2 3
-
6
 
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28
 
11.4. 2 WLC SP
-
8
 
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29
 
11.4. 3 DFN
-
6
 
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30
 
11.4. 4 M SL Lev e l
 
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31
 
1 2 DATAS HE E T A ND PART
-
NU M BE R INF OR MATI ON
 
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32
 
12.1
 
O
RDE RI NG 
I
NFORMATI ON
 
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32
 
12.2
 
D
EV
I CE  
M
A RK I NG 

T
OP
 
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33
 
12.2. 1 TSO T 2 3
-
6 Pac k age  Mar k ings
 
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33
 
12.2. 2 WLC SP
-
8 Pac k ag e Mar k ings
 
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34
 
12
.2. 3 DFN
-
6 Pac k ag e M ark ings
 
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34
 
12.3
 
T
A P E A ND 
R
EE L 
S
PE CI FICA TI ON
 
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35
 
A P PE ND IX  A . ME M OR Y MAP
 
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36
 
A P PE ND IX  B . E RRA TA
 
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40
 
F
I LTE R 
H
A LT 
T
I
MES
 
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40
 
A P PE ND IX  C . C ONTA CT I NF ORMA TI ON
 
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41
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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AS /B  Dat as heet  
 
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List of Ab brevi ation s
 
ATI
 
Autom at ic TuningI m plem ent at ion
 
BP
 
Boost  Power M ode
 
CS
 
Counts( Number of  Charge Transf ers)
 
C
s
 
I nter nal Refer ence 
Capacit or
 
DYCAL
TM
 
Dynam ic Calibrat ion
 
EM I
 
Electr omagnet icI nter f erence
 
ESD
 
Electr o
-
St atic Dischar ge
 
FTB/ EFT
 
( Electr ical) Fast Transient  Burst s
 
G ND
 
G r ound
 
HC
 
Halt  Char ge
 
LP
 
Low PowerM ode
 
LTA
 
Long Term  Aver age
 
ND
 
Noise Det ect
 
THR
 
Thr eshold
 
TM
 
Touch M ode
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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AS /B  Dat as heet  
 
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1
 
Overvi ew
 
1 .1
 
Dev ice  
 
The 
I Q S228AS/ B 
is a single channel 
capacit ive proxim it y and t ouch device which 
employs an inter nal volt age r egulator and 
r efer ence capacit or ( C
s
).
 
The IQ S228AS/ B device has a dedicat ed 
pin(s)
 
f or  t he connect ion of a sense 
electr ode(s)  ( Cx)  and out put  pin(s)  f or 
proxim it y and t ouch event s on O UT. The 
polarityoft heoutput pinscanbeconf igur ed. A 
1
-
wir e open drain dat a str eam ing pr otocol O R 
I
2
C inter f ace is im plement ed f or  debugging 
pur poses.
 
Special device conf igur at ion can be done by 
sett ingonet im epr ogr amm able(O TP)opt ions. 
 
The device aut om atically t r acks slow varying 
envir onm ent al changes via var ious signal 
processing algor it hm s and has an Autom atic 
Tuning Im plement ation ( ATI ) algor it h
m t o 
calibrat et he device t o t he sense elect r ode.  
 
f orm of hyst er esis t hat can t r ack slow var ying 
envir onm ent al change even while t he sensor 
is in a t ouch st at e. This is ideal f or port able 
applications.
 
The 
char ge 
t r ansf er
 
method of  capacit ive 
sensingisemployedontheIQ S228AS/ B.( The 
char ge t r ansf er pr inciple is t hor oughly 
descr ibed in t he applicat ion not e:  

-
 
1 .2
 
Ope ra tion
 
The device has been designed t o be used in 
applications wher e proxim it y is r equir ed and 
t ouch condit ions can prevail f or an extended 
per iod of t im e which m ay r esult  in 
uncompensat ed dr if t in convent ional 
capacit ive sensor s. 
 
Alowt hresholdisusedtodet e
ct t hepr oxim it y 
of an obj ect,  wit h a higher t hreshold f or  t ouch 
det ection. 
 
Dynam ic Calibrat ion is perf orm ed when a 
TOUCH condit ion is detected f or  longer  t han 
t
DY CA L
. Thehyst er esisalgor it hmwillnowcheck 
f ort her eleasecondit ionoft het ouch,whiles
t ill 
t r acking envir onm ent al changes
 
1 .3
 
Applic a bili ty
 
All
 
specif ications, except wher e specif ically 
m ent ioned ot her wise, provided by t his 
dat asheet
 
are applicable t o t he f ollowing 
r anges:
 
>
 
Tem per at ure:
 
I Q S228AS: 
 
-
20
°
Ct o+85
°
C
 
I Q S228B:  
 
-
40°Ct o+85°C
 
>
 
Supply volt age( V
DDHI
) :  1.8V t o 3. 6V
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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AS /B  Dat as heet  
 
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2
 
Packag ing
 
an d Pin
-
Out
 
TheIQ S228AS/ BisavailableinaTSO T23
-
6package.
 
t heIQ S228BisavailableinTSO T23
-
6
, DFN
-
6
 
or WLCSP
-
8
 
package
 
2 .1
 
IQ S 2 28 AS/ B
 
2 .1 .1
 
P in
-
out
 
T S OT2 3
-
6
 
Fi g u re 
2
.
1
:
Pi n
-
ou t o f I QS2 2 8 AS/B i n  t he  T SOT23
-
6  pa ck a g e.
 
Ta b l e 
2
.
1
: 
Pi n
-
ou t de sc ri p ti o n
 
IQ S22 8AS /B in T SO T 23
-
6
 
Pi n
 
Nam e
 
Ty p e
 
Fu n c ti o n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o rp ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  ca p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .1 .2
 
P in
-
out WLCS P
-
8
 
Ta b l e 
2
.
2
 
8 
-
pi n  W L CSP Pi n
-
ou t Desc ri pti o n
 
IQ S2
2 8B
 
8
-
p in WL C SP
 
Pin
 
Nam e
 
Ty pe
 
Fu nc tio n
 
1
 
Cx
 
Se n s e e l ec trod e
 
Con n e ct to c o nd uc tiv e  a re a  in te n d e d f o r 
s e ns o r
 
2
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
3
 
VREG
 
Reg u l a to r ou tp u t
 
Req u i res  ex te rn a l c a pa c ito r
 
4
 
VSS
 
Si g n a l GND
 
5
 
INPUT
 
Dig i tal  I n pu t
 
Fl o a ti n g i n pu t d u ri n g ru n ti m e. 
 
Rec o mm en d e d: Con ne c tto  
POUT
 
6
 
POUT 
/ ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
7
 
VDDHI
 
Su p p ly  I np u t 
 
Su p p ly  Vo lta g e I n pu t
 
8
 
PGM
 
Con fi g u ra tio n  pi n
 
Con n e cti on  f o r OTPp ro g ramm i n g. Flo a tin g  in p u t d u ri n g  
ru n tim e . 
 
Rec o mm en d e d: Con ne c tto  
OUT
 
p i n . Pro g ram mi n g c a n 
s ti ll  b e p e rfo rm ed  us i ng  t hi s  pin , p rov i de d  a d i od e  is  
u s e d. (Se e  AZD0 2 6  

Con fi g ura ti o n T o ol s  Ove rvi e w)
 
IQ S228
 
1
 
2
 
3
 
4
 
8
 
7
 
6
 
5
 
Fi g u re 
2
.
2
 
IQS2 2 8 B8
-
p i n W LCSP
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .1 .3
 
P in
-
out
 
DFN
-
6 
 
Fi g u re 
2
.
3
: Pi n
-
o u t of IQS2 2
8B
 
i n  DFN
-
6 p a ck a ge .
 
Ta b l e 
2
.
3
:Pi n
-
ou t de sc ri p ti o n .
 
IQ S22 8
B
 
6
-
p in DF N
 
Pin
 
Name
 
T ype
 
F u n ctio n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  
c a p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2
 
S c he ma tic
 
2 .2 .1
 
T S OT2 3
-
6
 
Fi g u re 
2
.
4
: 
Typ i ca l  ap p li ca ti on re fe re nc e s ch e ma tic  o fIQS2 28 AS/B. C2 &C3 are  op ti on a l for a d d ed  RF i mmu n i ty .
 
Fi g u re 
2
.
5
: 
IQS2 2 8 AS/Bo u tp ut p i n c o nfi gu ra tio n
 
fo r I 2 C de bu g  o pe ra tio n ,o r d riv in g  L EDs  (a c tiv e h i g h o r lo w o p ti o n  
a v a il a bl e ).
 
Where a syst em  level ESD st r ike is f ound t o cause t he I C t o go int o ESD induced latch
-
up, it  is 
suggest edt hatt hesupplycurr ent t ot heI Q S228ICislim it edbym eansof ase
r iesr esist or t hat could 
lim it  t he m axim um supply curr ent t ot heI C t o <80m A.
 
Ref e r t o  AZD0 0 8 fo r 
to u ch  k ey  de si g n
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2 .2
 
WLCS P
-
8
 
Fi g u re 
2
.
6
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
WL CSP
-
8  Pac k ag e
. C2 &C3 a re  o pti on a l  fo r ad d e d RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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AS /B  Dat as heet  
 
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2 .2 .3
 
DFN
-
6
 
Fi g u re 
2
.
7
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
DFN
-
6  Pa ck a ge
. C2 &C3a re  o p ti o n al  f o ra d de d  RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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3
 
User Co nfigur able Options
 
This section list
s t he user  conf igur able 
sett ings.
 
The
 
deviceisf ullyf unct ionalinit sdef aultst at e, 
but  som e applications may r equir e alt ernat ive 
conf igur ation sett ings.  These sett ings are 
enabled by conf igur ing O ne Tim e 
Pr ogr amm able( O TP)  user opt ions.
 
Conf igur ation c
an be done on packaged 
devices or in
-
cir cuit.  I n
-
cir cuit conf igur at ion 
m ay be lim it ed by values of ext ernal 
components chosen.
 
Popular conf igur at ions ar e available ex
-
st ock 

please check wit h t he local dist r ibutor f or 
availabil it y.  Azoteq can supply pre
-
c
onf igur ed 
devices f or  large quant it ies. 
 
3 .1
 
Configuri ng Dev ic es
 
Azoteqof f er saConf igurationTool( CT210/ 20) 
and accom panying software ( USBPr og. exe) 
t hat can be used t o progr am t he O TP user 
opt ions f or  pr otot yping purposes. M or e det ails 
r egarding t he conf igur at ion of t he device wit h 
t he USBPr og progr am  is explained by
 
application not e: 

AZD007 

USBPr og 
O verview

which can be f ound on t he Azot eq 
websit e. 
 
Alt ernat ive pr ogr am m ing solutions f or  t he 
I Q S228AS/ B also exist . For  f ur t her  enquir ies 
r egarding t his, please cont act  Azot eq at 
Pr oxSenseSuppor t @azot eq. com or t he loc
al 
dist r ibut or
 
3 .1 .1
 
IQ S 2 28 AS/ B Use r Se le c table O ptions
 
Ta b l e 
3
.
1
: 
IQS2 2 8 AS/B Ba nk 0  Us e r Se l ec ta bl e  Opti o ns  (0xC4H)
 
Bi t
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Name
 
I N_EN
 
REL
T HR
 
LOGI C
 
T
T HR 2
 
T
T HR 1
 
T
T HR 0
 
P
T HR 1
 
P
T HR 0
 
bi t 7
 
I N_E N: 
I nput E nable
 
S ect ion 
10. 2
 
0 = Out put  (P rox imi ty )
 
1 = I nput
 
bi t 6
 
RE L
T HR
: 
Releas e Thres hold
 
S ect ion 
10. 1
 
0 = 75%
 
1 = 87%
 
bi t 5
 
LOGIC:
 
Out put logics elect  (Only when S TREA MI NGmode is  
dis abled) 
 
S ect ion 
7. 2
 
0 = S of t ware Open Drain Act iv e Low
 
1 = Act iv e High
 
bi t 4
-
2
 
T
T HR
:
 
Touc h Thres holdS elect ions
 
S ect ion 
7. 5
 
000 = 72/ 256
 
001 = 4/ 256
 
010 = 8/ 256
 
011 = 24/ 256
 
100 = 48/ 256
 
101 = 96/ 256
 
110 = 128/ 256
 
111 = 160/ 256
 
bi t 1
-
0
 
P
T HR
: 
P rox imi ty Thres hold S elec t ions  
 
S ect ion
 
7. 4
 
00 = 4
 
01 = 2
 
10 = 8
 
11 = 16
 
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Ta b l e 
3
.
2
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Fu l l  ATI (0x C5H)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
Not used
 
Bank1: bi t 3
 
T URBO:
 
DY CA LTURB O
 
S ect ion 
7. 10
 
0 = Dis abled
 
1 = E nabled
 
Bank1: bi t 2
-
0
 
BAS E : 
B as e V alue 
 
S ect ion 
9. 3
 
000 = 200
 
001 = 50 
 
010 = 75
 
011 = 100
 
100 = 150
 
101 = 250 
 
110 = 300
 
111 = 500 
 
Ta b l e 
3
.
3
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Pa rti a l AT I
 
t
HA LT 1
 
t
HA LT 0
 
M ULT
S E NS E 1
 
M ULT
S E NS E 0
 
M ULT
COMP 3
 
M ULT
COMP 2
 
M ULT
COMP 1
 
M ULT
COMP 0
 
bit  7
 
bit  0
 
Bank1:7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
MULT
: Mult iplier f orS ens it iv ity
 
S ect ion 
7. 6
 
00
 
01
 
10
 
11
 
Bank1: bi t 3
-
0
 
MULT: Mult iplierf or Compens at ion
 
S ect ion 
7. 6
 
0000 t o 1111
 
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Ta b l e 
3
.
4
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  2  (0x C6H)
 
STREAM
 
TRANS
 
CO MM S
 
ND
 
Tar get
 
ATI
 
LP
1
 
LP
0
 
bit  7
 
bit  0
 
Bank2: bi t 7
 
ST RE AM: 
St eami ng Met hod 
 
S ect ion 
8. 2
 
0 = 1
-
wire
 
1 = 2
-
wire (I
2
C)
 
Bank2: bi t 6
 
T RANS : 
Charge Trans f er Frequenc y 
 
S ect ion 
7. 7
 
0 = 512k Hz
 
1 = 250k Hz
 
Bank2: bi t 5
 
COMM S :
 
St reami ng
 
S ect ion 
8
 
0 = Dis abled
 
1 = E nabled
 
Bank2: bi t 4
 
ND:
 
Nois e Det ec t
 
S ect ion 
7. 3
 
0 = Dis abled
 
1 = E nabled (1
-
wire c omms  only )
 
Bank2: bi t 3
 
T arget:
 
A TI t arget c ounts
 
S ect ion 
7. 8
 
0 = 1200
 
1 = 1024
 
Bank2: bi t 2
 
ATI
: A TI S elec t ion
 
S ect ion 
7. 9
 
0 = Full 
 
1 = P art ial
 
Bank2: bi t 1
-
0
 
LP
: P owermode S elect ion
 
S ect ion 
7. 12
 
00 = BP , 9ms  (64ms if z oom is disabled) 
 
01 = NP,  128ms
 
10 = LP 1,  256ms
 
11 = LP 2,  512ms
 
Ta b l e 
3
.
5
: 
Us e r Se l ec ta bl e  
Con fi g u ra ti on  Opt io n s: Ba nk  3  (0x C7H)
 
~
 
~
 
~
 
~
 
Zoom
 
~
 
~
 
CTRL
 
bit  7
 
bit  0
 
Bank3: bi t 7
-
4
 
S ystem  Use
 
Bank3: bi t 3
 
Zoom : 
Zoom Dis able
 
S ect ion 
7. 13
 
0 = ZoomE nabled
 
1 = Zoom Dis abled
 
Bank3: bi t 2
-
1
 
S ystem  Use
 
Bank3: bi t 0
 
CT RL: 
Cont rolI nput  
 
S ect ion 
7. 1
 
0 = Halt Charge
 
1 = Filt er Halt
 
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4
 
Measuri ng 
C
a pacit ance 
U
sing th e 
Cha rge Tran sfer
 
M
etho d
 
The 
char ge 
t r ansf er
 
m ethod of  capacit ive 
sensing is em ployed onthe IQ S228AS/ B.
 
A char ge cycle is used to t ake a m easur em ent 
of t he capacit ance of t he sense elect r ode 
( connect ed t o Cx) r elative t o ground. It consist s 
of a ser ies of pulses char ging Cx and 
dischar ging 
Cxt ot her eferencecapacit or , at t he 
char get r ansf erf r equency( F
CX
 
-
 
r ef ert oSection 
11
) . Thenum ber of t hepulsesr equir edt or each 
a t r ip volt a
ge on t he refer ence capacit or is 
r efer r edt oast he 
Count  
value( CS) whichist he 
instant aneous capacit ive m easur ement . The 
Counts ( CS)  ar e used to det er m ine if  eit her a 
physical cont act  or proxim it y event  occurr ed, 
based on t he change in CS det ect ed. The 
t ypical values of CS, wit hout a t ouch or  
proxim it y condit ion r ange bet ween 1344 and 
1865 counts,  although higher and lower counts 
can be used based on t he application 
r equir ement s.  With CS larger t han +/
-
1865 t he 
gain of t he syst em  may become t oo high 
caus
ing unst eady oper ation.
 
The I Q S228AS/ B schedules a char ge cycle 
ever y t
SA MP LE
 
seconds t o ensure r egular 
samples f or  pr ocessing of r esult s.  The dur at ion 
of t he char ge cycle is def ined as t
CH A RGE
 
and 
variesaccordingt ot hecountsr equir edt or each 
t he tr ip 
volt age.  Following t he char ge cycle 
other activit ies such as dat a st r eam ing is 
completed ( if  in str eam ing m ode) ,  bef ore t he 
next  char gecycle is init iat ed.
 
Pl easenot e: A tt achingaprobet ot heCxpi n 
w il l i ncrease t he capacit ance of t he sense 
plat e and t h
eref ore C
S
.  T his may have an 
i mmediat e i nf l uence on t he Counts val ue 
( decrease t
CH AR GE
) and cause a proximit y or 
t ouchevent .
 
Af t er t
HA LT
 
secondst hesyst em will 
adj ust t o accomm odate f or t his change. I f t he 
t otal load on Cx,  wit h t he probe at t ached is st ill 
lowert hant hem aximumCxloadt hesyst emwill 
cont inuet of unct ionnor mallyaft ert
HA LT
 
seconds 
wit h t he probe att ached.
 
Fi g u re 
4
.
1
: 
Cha rge  cy cl e s a s ca n  b e s ee n  on  CX.
 
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Fi g u re 
5
.
1
: 
DYCAL  Ope ra ti o n (Se l f Capa c iti ve  Se ns in g )
 
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6
 
Operatin g Prin ciple
 
Figur e 5.1 is a visual r epr esent ation of  t he 
DYCAL f unct ionalit y. The O UT pin is used t o 
indicate t he st atus of a DYCAL event  ( bot h 
proxim it y a
nd a t ouch event) . The DYCAL 
f unct ionalit y is sum m ar ised below.  
 
Non
-
T ouch M ode
 
The O UT pin is act ivated on t he successf ul 
det ection of a pr oxim ity event and will r emain 
activat edf ort hedur ationoft heproxim it yevent , 
per m itt ing t hat  t his event is no lo
nger t han t he 
f ilt er halt  t im ings.  The LTA will be halt ed in t his 
t im e.
 
Assoonasat ouchcondit ionisdet ect ed( Count 
values, orCS, f allbelowT
T HR
) , t hecont r ollerwill 
dynamically r e
-
calibrat e it s LTA t o t he halted 
LTA 

T
T HR
.  The I C is now in TouchM ode. 
 
T ouch M ode
 
Af t er t he re
-
calibrat ion of t he LTA, it will f ollow 
t he Count s ( CS) and be allowed t o t r ack slow 
varying envir onm ent al changes. I f t he Counts 
( CS)  were t o exceed t he LTA by t he r elease 
t hreshold ( REL_T
T HR
) t he tou
ch det ect ion will  
st op and t he O UT pin will r etur n t o it s or iginal  
st ate.
 
7
 
Configur able S ettin gs 
 
This section descr ibes t he user  conf igur able 
opt ions oft heI Q S228AS/ B inm ore det ail. 
 
User progr amm able options are selected by 
conf igur ing t he O TP select ion
s. Please r ef er t o 
Section 
2.2. 2
 
f oranover viewoft heconf igur able 
sett ings.
 
7 .1
 
CT RL: Ex ternal Control
 
T he user has t he opt ion t o cont rol some  
parame
t ers of  t he I Q S228AS/B f rom an 
ext ernalsource. T heI Ccanbeusedindef au lt  
mode (CTRL unc onn ect ed) or t he user ca n  
use t he CT RL pin t o select  whet her t he 
mast er should halt  t he charge t ransf ers (i.e.  
st opoperat ion)ort ohal t LT A
 
f ilt ert rackingon  
t he
 
I Q S228AS/B.
 
7 .1 .1
 
Cha rge  Ha lt
 
I f  CT RL is sampled high f or lon ger t han  
T
EXT _H ALT,  
t he charge co nversion cycle w ill be  
halt ed,  once t h e current  conversion has be en  
complet ed.  T he devic e will rema in in t hi s  
st andby mode unt il t he CT RL line is sampled  
low 
aga in.  An aut omat ic reseed is perf ormed  
direct lyaf t erCT RLisreleasedt ocompensat e  
f or any enviro nment al changes w hich mi ght  
have occurred d uring t h e st andby mode.
 
7 .1 .2
 
Hal t LT A 
F
il te r
 
W hen conf igured in t his  mode,  CT RL can be 
used t o cont rol t he LT A halt  t i
mes when  
sampledhig h. T heCT RLpinhasprecedence  
over t he conf ig urat io ns bit s select ed f or t h e  
halt  t imings.
 
I f  CTRL is sam pled high f or longer  t han 
T
E X T _HA LT
,  t he f ilt er will be halt ed unt il t his pin is 
sampled low.
 
.
 
Fi g u re 
7
.
1
: 
Ma s te r Out p u t s ig na l  o n CTRL  p in  t o  Ha l t Op era tio n  o r Fi l te r Ha l t
 
7 .1 .3
 
P uls e  on CT RL:
 
T he pulse on t he CT RL pin needs t o adher e  
t o t he f ollowing t imin g const r
aint s:
 
25ms  <  T
PULSE 
<  35ms
 
7.1. 3. 1
 
I Q S228A S/ B:  Reseed
 
A reseed co ndit io n can be init iat e d by  
generat i ngap ulseo nt heCT RLpin. T heLT A  
will b e reset  t o t he coun t ,  f orcing t he O UT  pin 
t o it s original st at e.  
 
I f  t he count  value is out side it s allow abl e  
limits,  t he device will f orce an AT I  event  t o 
reset  t he syst em sensitivit y.  (Please ref er t o 
sect ion 
8. 1
 
f or more det ail).
 
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7.1. 3. 2
 
I Q S228A S/ B:  re
-
AT I
 
Ar e
-
ATIcondit ioncanbeinit iatedbygener at ing 
a pulse on t he CTRL pin. This f unct ion can be 
issued at anyt im e.
 
Fi g u re 
7
.
2
: 
Ma s te r Out p u t s ig na l  o n CTRL  t o fo rce  a  Res e ed Con d i ti o n
.
 
7 .2
 
LOG IC 
 
Thelogicusedbyt hedevicecanbeselectedas 
active HIG H or act ive LOW.  The out put  pins 
O UT and CTRL will f unct ion based on t his 
selec
t ion.  When conf igured as Act ive High, t he 
out put swillr emainhighaft er PO Runt ilATIhas 
completed.  The ATI t im e will vary accor ding t o 
t he capacit ive load on t he sensor,  but  t ypically 
does not exceed 500ms.
 
Co n f igu ratio n :  
Bank0
 
b it 5 :  Lo g icO u t p u t  
Sele ctio n
 
Bi t
 
Select i on
 
0
 
Soft ware O pen Dr ain Active Low
 
1
 
Act ive High 
 
Asoft war eopendrainout put isim plement edf or 
t he O UT pin when configured in active low 
m ode. The volt age on t he pull
-
up r esist or  is 
lim it ed t o t he 
I Q S228AS/ B supply volt age.  A 
4k7
-

is 
r ecomm ended.
 
7 .3
 
RF Nois e  on I QS 2 28 AS/ B 
 
7 .3 .1
 
ND: RF Nois e  De tec tion
 
The IQ S228AS/ B has RF Noise Detect ( ND) 
f unct ionalit y. I f ND f unct ion is enabled, t he 
I Q S228AS/ B is able t o detect RF Noise 
on t he 
TOUT/ ND pin. Furt her details on t he wor king of 
t his can be f ound in the Application Not es: 
AZD015 and AZD015b. 
 
Note:  ND input enable is a legacy input and is 
not  r ecomm ended f or  use in new designs. The 
input has been desensitized by def ault and 
is 
not t estedt otr iggerataspecif icRFinputpower 
level
 
7 .3 .2
 
IQ S 2 28 AS/ B RF Noise  I mmunity
 
TheI Q S228AS/ Bhasadvancedim m unit yt oRF 
noisesour cessuchasGSM cellulart elephones, 
DECT, Bluet oot h and WI FI  devices. Design 
guidelines should however be f ollowe
d t o 
ensure t he best noise im m unity.  The design of 
capacit ivesensingapplicationscanencom pass 
alarger angeof sit uat ionsbut asasum m ar yt he 
f ollowing should be not ed t o im prove a design:
 
>
 
Aground pla nesh oul db eplac edu ndert h e  
I C,  except  under t he 
Cx line.
 
>
 
All t he t racks on t he PCB must be kept as 
short  as possible.  
 
>
 
T he capacit or bet we en  VDDHI  and G ND  
as well as bet ween VR EG and G ND,  must  
be place d as close as p ossible t o t he I C.
 
>
 
A 100 pF capacit or should be place d in  
parall el wit h t he 1uF  capacit o
r bet wee n  
VDDHI andVSS.Anot her100pF capacit or  
can be p laced in par allel wit h t he 1 uF  
capacit or bet we en VRE G  and G ND.
 
>
 
I f  t he device is t oo sensit ive f or a specif ic  
orderopt ion,
 
aparas it iccapacit or(
t ypicall y
 
20pF ) can be added b et ween t he Cx line  
and
 
grou nd.
 
>
 
Proper sense elect rod e  and but t on desig n  
princip les must  be f ollo wed.
 
>
 
Unint ent i onal co upl ing of  sense elect rod e  
t o ground an d ot her  circuit ry must  be 
limited by increasin g t he dist ance t o t hese 
sources.
 
I n som e inst ances a ground plane som e 
dist an
ce fr om t he device and sense electr ode 
m ay provide signif icant  shielding f r om 
undesir ed inter f er ence. 
 
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When t he capacit ance bet ween t he sense 
electr ode and ground becom es t oo lar ge the 
sensit ivit y of t he devicem ay be influenced.
 
7 .4
 
P rox imi ty 
T hre s hold
 
T he 
I Q S228AS/ B
 
has 4 proximity t hreshol d  
set t ings indicat e d in c ount s.  T he proximity 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired sensit ivit y and noise immunit y.  A 
proximityevent ist rigge redif t heCount s(CS) 
diverges more t han 
t h e select ed t hreshol d  
f rom t he LT Af or 6 consecut ive cycles.
 
Conf i gurat i on:  
Bank0
 
bi t 1
-
0 
P
T HR 1
:P
T HR 0
: Proximi t yThresholds
 
Bi t
 
Select i on
 
00 
 
4
 
01 
 
2
 
( M ost sensit ive)
 
10 
 
8
 
11 
 
16
 
( Least sensit ive)
 
7 .5
 
T ouchT hre s hold
 
T he 
I Q S228AS/B has 8 t ouch t hreshol d  
set t ings indicat ed i n  count s.  T he t ouch 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired t ouch se nsit ivit y.  A t ouch event  is 
t riggered if  t he Count s  (CS) diverges more 
t han t he select ed t hres hold f rom t he LT A f or
 
2 consecut ive cycles
. 
 
I nt heNO
-
T O UCHst at et heCount s(CS)must  
diverge mor e t han t he t ouch t hresho ld val ue  
below
 
t he LT A. O perat ing in t he T O UCH  
ST AT E,  t he CS must diverge more t han 
REL_T
T HR
 
of  t he t ouch threshol d valu e 
abov e
 
t he LT A
.
 
The f ollowing equ
ation is used t o det erm ine if  a 
t ouch or r elease event  occurr ed.
 
NO  TO UCH STATE:
 
LTA
 
CS<=
 
T
T HR
 
TOUCH STATE:
 
CS 
-
 
LTA
 
>=
 
REL_T
T HR
 
Conf i gurat i on:  
Bank0
 
bi t 4
-
2T
T HR 2
:T
T HR 0
 
T ouchT hreshol ds 
 
T
T HR 2
:T
T HR 0
: 
Touch Thr esholds 
 
Bi t
 
Select i on
 
000 
 
72/ 256
 
001 
 
4/256( M ost sensit ive)
 
010 
 
8/256
 
011 
 
24/ 256 
 
100 
 
48/ 256
 
101 
 
96/ 256
 
110 
 
128/256
 
111 
 
160/256( Least sensit ive)
 
7 .6
 
Multipli e rs
 
Whenusingpar t ialATI,thebasevalueissetup 
using t he m ult ipliers.  Com pensat ion will st ill be 
add
ed aut om aticallyt oreach t he t ar get.
 
7 .7
 
Cha rge T ra ns fer
 
The char ge t r ansf er f r equency of t he 
I Q S228AS/ B is adj ustable. Changing t he 
t r ansf er f r equency will aff ect  sensit ivity and 
r esponser ate.  Two opt ions ar e available:
 
Conf i gurat i on:  
Bank2
 
bi t 6
 
T RA NS:
 
Char ge Tr ansf er  Frequency
 
Bi t
 
Select i on
 
0
 
512kHz
 
1
 
250kHz
 
7 .8
 
T a rge t Counts
 
The t arget  oft he ATI algorithm can be adj ust ed 
bet ween1200( def ault )and1024count s. When 
less sensit ivit y is r equir ed, t he lower counts wil
l 
also incr easer esponse rate:
 
Conf i gurat i on
: 
Bank2
 
bi t 3
 
T arget :
 
ATI t ar get counts
 
Bi t
 
Select i on
 
0
 
1200
 
1
 
1024
 
7 .9
 
E na ble P a rtial ATI
 
I n some applications t he st art up t im e of t he 
I Q S228AS/ B m ay be r equir ed t o be decr eased. 
This is 
possible by enabling par t ial ATI,  if  the 
m ult ipliers r equir ed can be det erm ined, and t he 
compensat ion alone is adequate t o account  f or 
envir onm ent al change.
 
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Conf i gurat i on:  
Bank2
 
bi t 2
 
AT I:
 
Par t ial ATI
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enab
led
 
7 .1 0
 
DYCAL T URBO
 
I n som e applications, it m ay be r equir ed t o 
im provet heent ryandexit speedofTouchM ode 
by r em oving t he ent ry r eseed delay, as well as 
t urning of f t he AC
-
f ilt er s. This can be done by 
enabling t he DYCAL TURBO m ode.
 
Conf i gurat i on:  
Bank1
 
bi t 3
 
T URBO:
 
DYCAL TURBO
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enabled
 
Notet hatifDycalTur boisenabled,t heLTAwill  
halt  at t he r eseed point for t
HA LT
 
if Touch M ode 
isent er edbef or eapr oxim it yevent isr egist ered.
 
7 .1 1
 
Filte r Ha lt
 
The 
LTA
 
f ilt
er only executes while no proxim it y 
events ar e det ect ed to ensure com pensat ion 
only f or envir onm ent al changes. O nce a t ouch 
eventisdet ect edt hef ilt erwillr esumeoper ation 
and will no longer  be halt ed.  The halt t im ing 
conf igur ation sett ings determ ine ho
w long t he 
f ilt er is halt ed.
 
Conf i gurat i on:  
Bank1
 
bi t 7
-
6
 
Bi t
 
Select i on
 
00 
 
20 seconds
 
01 
 
40 seconds
 
10 
 
Never
 
11 
 
3 seconds
 
T he presenc e of  a pro ximity condit ion f or a 
t ime exceeding t he halt  t ime will be deemed 
as a f ault  st at e which w ould t rigg er a resee d  
event whereaf t ert heou t put st at eont heO UT 
pin wil l be reset  t o it s original co ndit io n.  
 
7. 12
 
Low P owe r Modes  
 
There exist  4
 
LP m odes.  The LP m odes will  
decr ease t he sam pling fr equency of  CS which 
will r educe t he 
power consumpt ion
 
of  t he 
device. However , t his will also increase t he 
r esponset im e of t he device.
 
Conf i gurat i on:  
Bank2
 
bi t 1
-
0
 
Bi t
 
Select i on
 
00 
 
9.1m s ( BP)  64m s if  Zoom  disabled
 
01 
 
128ms( Norm al Power Mode)
 
10 
 
256ms 
( Low PowerM ode 1)
 
11 
 
512ms( Low PowerM ode 2)
 
7 .1 3
 
Zoom
 
The I Q S228AS/ B has t he opt ion t o disable t he 
zoom f unct ion. Thism eanst hat t hesam plet im e 
will st ay f ixed,  even when proxim ity and t ouch 
events are m ade. When t his is activat ed, boost 
power m ode 
will change fr om a 9m s sample 
t im e, t o 64m s.
 
Conf i gurat i on:  
Bank3
 
bi t 3
 
Zoom:
 
Zoom Disable
 
Bi t
 
Select i on
 
0
 
Enabled 
 
1
 
Disabled
 
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8
 
Streami ng Mo de
 
F or a more complet e d escript ion of  t he dat a  
st reamingprot ocol, pl ea seref ert oApplicat
ion  
Not e AZ D017 on t he Azot eq websit e.
 
T heIQ S228AS/Bhast hecapabilit yt ost ream 
dat at oaMCU.T hisprovidest hedesignert he  
abilit y t o obt ain t he p a ramet ers and sensor  
dat a wit hin t he device in order t o aid design  
int oappl icat ions. Dat as t reamingis 
perf ormed  
as a 1
-
wire dat a prot ocol on t he O UT  pin O R 
I
2
Cint erf ace.T heout put f unct ionof t hispinis 
t heref orelost whent hedeviceisconf iguredi n  
st reaming mode.  Dat a Str eaming can be  
enab led as ind icat ed be low:
 
Conf i gurat i on:  
Bank2
 
bi t 5: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
Disabled 
 
1 
 
Enabled
 
Figur e 
8
.
1
 
illust rat es t he communicat io n  
prot ocol f or init ialisin g and sending dat a wit h  
t he 1 wire communicat i on prot ocol.  
 
1.
 
Communicat i ons init i at e d by a ST ART 
bit .  Bit  def ined as a lo w condit io n f or  
T
S
T ART
. 
 
2.
 
F ollowi ng t he ST ART  bit , is a 
synchronisat i on byt e (T
INI T
 
= 0xAA).  
T hisbyt eisusedbyt heMCUf orclock 
synchronisat i on.
 
3.
 
F ollowi ng T
I NIT
 
t he dat a byt es will be  
sent .  8 Bytes will be sent  af t er each 
charge cycle.
 
4.
 
Each byt e sent  wi ll be  precede d by 
a 
ST ART  bit  and a ST OP bit  will f oll ow  
every byt e.  
 
5.
 
ST O P bit  indicat ed by  t aking pi n 1  
high.  T he ST O P bit does not  have a 
def ined p eriod.
 
Fi g u re 
8
.
1
: 
D
e b ug : 1
-
wire  strea mi n g  De bu g  Mo d e
.
 
Thef ollowingt abledef inest hebitdef init ionsf or 
t he IQ S228AS/ B devices dur ing Str eam ing 
M ode.
 
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®
 
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Ta b l e 
8
.
1
: 
By te  De fin i tio n s f o rStre a mi n g  Mo de
 
Byt e (B)
 
Bit
 
Value
 
0
 
AA
 
1
 
7 :0
 
CS Hig h  by te
 
2
 
1 5 :8
 
CS L o w b y te
 
3
 
2 3 :1 6
 
L TA Hig h b y te
 
4
 
3 1 :2 4
 
L TA L o w by te
 
5  Sy s
 
Fl a gs
 
39
 
38
 
37
 
36
 
35
 
34
 
33
 
32
 
~
 
~
 
Ac ti ve  Hi gh
 
Fi l te r Ha l t
 
L P a c ti v e
 
ATI  Bu sy
 
Noi s e Fo u nd
 
In  Z o om
 
6
 
47
 
46
 
45
 
44
 
43
 
42
 
41
 
40
 
To u ch
 
Pro x im i ty
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
7
 
5 5 :4 8  
 
Com p e ns a ti o n 
 
8
 
6 3 :5 6
 
Cou n te r 
 
8 .1
 
E v e nt Mode
 
TheIQ S228AS/ BhasEvent M odeim plem ent ed 
dur ing 1
-
wir e comm unication. This allows t he 
M CU t o m onit or t he PO UT pin 
f or  st at us 
changes ( pr oxim ity or t ouch m ade or r eleased 
events) instead of  capt uring dat a cont inuously.  
Uponast at uschange,t heIQ S228AS/ Bwillpull 
t he PO UT pin f or  low t o indicate t o t he M CU t o 
r eaddat a.ThePO UTpinwillst aylowf or1.6m s.
 
8 .2
 
I
2
C
 
The I
Q S228AS/ B also allow f or I
2
C st ream ing 
f ordebugging.DataSt reamingcanbechanged 
f r om  1
-
wir e pr otocol t o I
2
C as shown below:
 
Conf i gurat i on:  
Bank2
 
bi t 7: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
1
-
Wire Pr otocol
 
1 
 
I
2
C St r eam ing
 
The M em ory M ap f or t he IQ S228AS/ B can be 
f ound in 
Appendix A
. 
 
The IQ S228AS/ B can comm unicat e on an I 2C 
 
ll
-
upr esist or sshouldbeplacedonSDAandSCL.
 
The Contr ol byt e indicates t he 7
-
bit device 
address ( 0x44H) and t he Read/Wr it e indicator 
bit .
 
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9
 
Auto T uning Imp le mentatio n (AT I)
 
ATI is a sophist icated t echnology im plement ed 
in t he latest  
gener ation Pr oxSense
®
 
devices 
t hat  opt im ises t he per f orm ance of  t he sensor  in 
a wide r ange of applications and envir onm ent al 
condit ions (r efer  t o application not e AZD0027 
-
 
Auto TuningI m plem ent at ion) . 
 
ATI m akes adj ust ment s t hr ough ext ernal 
r efer ence capa
cit or s unnecessar y ( as r equir ed 
by m ost  ot her  solutions)  t o obt ain opt im um 
per f or m ance.
 
9 .1
 
Full AT I
 
The IQ S228AS/ B im plem ent s an aut om at ic ATI  
algor it hm. This algor it hm aut om atically adj ust s 
t he ATI par am eter s t o opt im ise t he sensing 
electr odes connect ion t o 
t he device.  
 
The device will execute t he ATI algor it hm 
whenever t he device st ar t s
-
up and or when t he 
counts ar e not wit hin a pr edeter m inedr ange. 
 
There are 2 im port ant  def init ions t o under st and 
f or ATI:
 
9 .2
 
AT IT a rge t
 
ATI adj usts int ernal cir cuit r y accor ding t o t wo 
par amet ers,  t he 
ATI multi pli er
 
and t he 
AT I 
compensati on
. 
 
>
 
The 
ATI mul ti pli er
 
can be viewed as a 
cour seadj ust m entoft heCounts( CS) ,used 
t o achieve t he ATI BASE value.  
 
>
 
The 
ATIcompensat i on
 
isaf ineadj ust
m ent 
used t o r eacht he ATI  TARG ET value. 
 
With t hese t wo par ameters t he Count s ( CS)  of 
t he IQ S228AS/ B is t uned unt il an ATI t ar get 
value of 1200 is achieved.
 
9 .3
 
AT I
BASE
: Si gnifica nc e of AT I Bas e
 
Asm ent ionedabove, t he 
ATImul ti pli er
 
isused 
t o select a base 
value f or t he ATI. The ATI 
BASEvalueisim port ant ,asthisdet erm inest he 
sensit ivit y of t he device.  The sensit ivit y can be 
def ined as:
 
Sensit ivit y = ATI TARG ET / ATI BASE
 
TheATITar getr emainsfixedat1200anditcan 
t hus be seen f r om t his t hat a large
r  base value 
will r esult  in a less sensit ive device.  The 
designer has t he opt ion t o incr ease/r educe the 
sensit ivit y of t he syst em  t hrough t he ATI BASE 
value.  For  m ost  applications t he ATI BASE 
should be kept  def ault .
 
The opt ions f or  t he ATI BASE values are
 
as 
f ollows:
 
Conf i gurat i on:  
Bank1
 
bi t 2
-
0
 
Bi t
 
Select i on
 
000
 
200
 
001
 
50
 
010
 
75
 
011
 
100
 
100
 
150
 
101
 
250
 
110
 
300
 
111
 
500
 
9 .4
 
S e ns itivity  
D
ue  to ATI 
 
Theadj ust m ent of t heATI par am et erswillr esult  
in variat ions in t he count and sensit ivi
t y. 
Sensit ivit y can be observed as t he change in 
count as t he r esult of a 
f ixed
 
change in sensed 
capacit ance. The ATI param et ers have been 
chosen t o provide signif icant over lap.  I t m ay 
t her ef ore be possible t o select var ious 
combinat ions of  ATI m ult iplier and ATI  
compensat ion set t ings to obt ain t he sam e 
count. Thesensit ivit yof the 
variousopt ionsm ay 
however  be dif f er ent f or the same count . 
 
9 .5
 
AT I P roc e dure
 
Whilet heAutom aticATIalgor it hmisinprogr ess 
t his condit ion will be indicated in t he st r eam ing 
dat a and pr oxim ity and touch event s cannot  be 
det ected.  The device will only brief ly r emain in 
t his condit ion and it will be ent er ed only when 
r elatively lar
ge shift s in t he count has been 
det ected.
 
The aut om atic ATI f unct ion aim s t o m aintain a 
const antcount,r egar dlessoft hecapacit anceof  
t hesenseelectr ode( wit hint hem axim umr ange 
oft he device) . 
 
The eff ect s of aut o
-
ATI on t he application ar e 
t hef ollo
wing:
 
>
 
Aut omat ic adj ust ment  of  t he devic e  
conf igurat io n and processing paramet er s  
f or a wide range of  P CB and app licat io n  
designst omaint ai naopt imalconf igurat i o n  
f or proximity and t ouch det ect ion.
 
>
 
Aut omat ic t uning of  t he sense elect rod e at  
st art
-
up t o o
pt imise t he sensit ivit y of  t he 
applic at ion.
 
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>
 
Aut omat ic re
-
t uning when t he devic e  
det ect s changes in t he sensing elect rod es  
capacit ance t o acco mmodat e a large  
rangeof chang esint heenvironme nt of t he 
applic at ion t h at  inf lue nces t he sensi n g  
elect rode.
 
>
 
Re
-
tu
nin g on ly occur s during devic e  
operat io nwhenarelat iv elylargesensit iv it y  
reduct ion is det ect ed.  T his is t o ensure  
smoot h operat ion of  the device durin g  
operat io n.
 
>
 
Re
-
t unin g may t emporarily inf lue nces t he  
normal f unct ioni ng of  the device,  but  in  
most  in
st ances t he ef fect  will be hardly  
not iceab le.
 
>
 
Short lyaf t ert hecompletionof t here
-
t unin g  
process t he sens it ivit y of  a Proximity  
det ect ionmaybereduc edslight lyf oraf ew 
seconds as int erna l f ilt e rs st abilises.
 
Autom at ic ATI can be im plement ed so 
eff ec
t ively duet o:
 
>
 
Excellent  syst em signal t o noise rat i o  
(SNR).
 
>
 
Eff ect ive digit al sign al processing t o  
remove AC and ot her n oise.
 
>
 
T he very st able core of t he devices.
 
>
 
T he built
-
in ca pab ilit y t o accommodat e a  
large ran ge of  sensing e lect rod e  
capacit ances.  
 
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®
 
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®
 
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10
 
DYCAL Specifi c set tings
 
1 0 .1
 
Rel e as e T hres hold
 
TheIQ S228AS/ Bhast heopt iont oincreaset hereleaset hresholdwheninTM. Thishelpst hatsm all 
variat ions caused by m oving a f inger/ hand on a touch pad will not cause the I C t o exit TM
, m aking 
t he solution m or er obust . The opt ions available are shown below:
 
Conf i gurat i on:  
Bank0
 
bi t 6
 
Bi t
 
Select i on
 
0 
 
75% of  Ent r y Delt a
 
1 
 
87. 5% of Entr y Delt a
 
Af t er ent er ing TM,  as soon as t he LTA f ollows t o wit hin 16 counts,  a Ent r y Delt a value is calculated 
as:
 
>
 
Entr y Delt a=LTA
entry
 
-
 
LTA
cur re nt
 
This calculated Entr y Delt a value is used f or t he Release Threshold as shown above.
 
I f  upon entr y,  t he LTA value is 
alr eady wit hin 16 Counts,  t he Ent r y Delt a is t aken as t he calculated 
t oucht hreshold value.
 
1 0 .2
 
Input E na ble
 
TheIQ S228AS/ Bcanbeconf igur edt ohavet heCTRLpinf unct ionasanout putonaPr oxim it yevent.
 
Choosing t he CTRL pin as out put r emoves t he Filt er Ha
lt  and Halt Char ge opt ions of t he pin as an 
input.
 
Using a t ouch event  t o act ivate O UT will m ake t he syst em  less sensit ive which is needed in some 
applications. The LTA will st ill halt  wit h t he det ect ion of a pr oxim it y but  will not  have an 
inf luence on 
t heO UT pin. The LTA will st ill r e
-
calibrat e once at ouch condit ion is det ected.
 
Conf i gurat i on:  
Bank0
 
bi t 7
 
Bi t
 
Select i on
 
0 
 
O utput
 
1 
 
I nput
 
IQ  Sw it ch
®
 
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®
 
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11
 
Electric al Sp ecific a tions
 
1 1 .1
 
Abs olute Ma x imum 
Spe c ifica tions
 
Exceeding t hesemaximum specif i cat i ons may cause damaget ot hedevice
.
 
O per at ing t em per atur e
:
 
I Q S228AS
 
-
20°Ct o 85°C
 
I Q S228B
 
-
4
0°Ct o 85°C
 
Supply Volt age ( V
DDHI
 
V
SS
)
 
3.6V
 
M axim um  pinvolt age(OUT, CTRL)
 
V
DDHI
 
+ 0.
3
V
 
Pin 
volt age ( Cx)
 
1.7V
 
M inim um pin volt age ( VDDHI ,  VREG, O UT, CTRL, Cx)
 
V
SS
 
-
 
0.
3
V
 
M inim um power
-
on slope
 
100V/ s
 
ESD prot ect ion ( VDDHI, VREG ,  V
SS
, O UT, CTRL, Cx)
 
8kV
 
1 1 .2
 
Ge ne ral Cha rac teri s tic s
 
I Q S228AS/ B devices ar e r at edf or supply volt ages bet ween 1.8V and 3
. 6V.  
 
Ta b l e 
11
.
1
: 
IQS2 28 AS/B Gene ra l  Ope ra ti ng  Co nd i tio n s
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
T YP
 
MAX
 
UNIT
 
Su p p ly  vo l tag e
 
V
DDHI
 
1.
8
 
3 .3
 
3 .6
 
V
 
In te rn al  reg u l ato r ou tp ut
 
DDHI 
 
V
REG
 
1 .6 4
 
1 .7
 
1.
75
 
V
 
Bo o s t Po wer o pe ra ti n g c u rren t 
 
DDHI 
 
I
IQ S2 2 8 AS/B_ BP
 
120
 
129
 
135
 
˛
A
 
Norm a l  Po wer op e ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ NP
 
4 .9
 
6 .4 5
 
8 .1
 
˛
A
 
L o w p o wer1  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B
 
L P1
 
2 .9 5
 
3 .8
 
4 .8 5
 
˛
A
 
L o w 
p o wer2  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ L P2
 
1 .8 8
 
<2 .5
1
 
3 .2
 
˛
A
 
C
x
 
p i n c a p ac i ta n ce
 
DDHI 
 
C
C
xL o a d
 
120
 
pF
 
Char ge Transf er  Tim ings f or  low powerm ode isf ound in 
Section 
7.12
.
 
Ta b l e 
11
.
2
: 
Sta rt
-
u p a n d s h u t
-
d o wn sl o pe  Ch a rac te ri s ti cs
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
MAX
 
UNIT
 
POR
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
POR
 
0 .3
2
 
1.
7
 
V
 
VDDHI 
re s e tl e ve l
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VDDHI
 
N/A
 
1 .7
 
V
 
VREG
 
re s e t le v el
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VREG
 
N/A
 
1 .5 8
3
 
V
 
1
 
Al l l ow p ower c urr en t v al ue s  aris e fr om 
c h arac teriz a tio n do ne fro m (
-
) 35°C  to ( + ) 8 5°C a t 3. 3V.
 
2
 
F or a p ower c y c le,e ns ure lower ing  VDD HI b el ow th e min im um v a lue  bef ore r a m pin g VD DHI pas t th e 
max im um PO R v a lue
 
3
 
F igur e  
2
.
4
 
Cap ac itors  C 1 & C3 s h ou ld be c hos e n to  c omp ly  wit h th is  s pec if ic at io n
 
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®
 
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Marc h 2022
 
1 1 .3
 
Output Cha ra c teri s tics
1
 
Ta b l e 
11
.
3
: 
TOUT Cha ra c te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S INK  
 
O utput  Low 
volt age
 
100mV
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
100mV
 
V
DDHI
 
= 3.3V
 
10
 
100mV
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
4
: 
POUT Ch a rac te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.1V
 
V
DDHI
 
= 3.3V
 
10
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
5
: 
Comb i ne d  Cha ra cte ri s ti cs
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
17
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.V
 
V
DDHI
 
= 3.3V
 
20
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
1
 
I/ O sink capabilit ies only in Act ive Low conf igur ation. I /O sour ce capabilit ies only in Act ive High 
conf igur ation.
 
IQ  Sw it ch
®
 
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®
 
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1 1 .4
 
P a c ka ging I nforma tion
 
1 1 .4.1
 
T S OT2 3
-
6 
 
Fi g u re 
11
.
1
: 
TSOT2 3
-
6  Pac k ag i n g
1
 
Ta b l e 
11
.
6
: 
TSOT2 3
-
6  Di me nsi o n s
 
Dimen sion
 
Min ( mm )
 
Max (m m)
 
A
 
2 .6 0
 
3 .0 0
 
B
 
1 .5 0
 
1 .7 0
 
C
 
2 .8 0
 
3 .0 0
 
D
 
0 .3 0
 
0 .5 0
 
E
 
0 .9 5  Bas ic
 
F
 
0 .8 4
 
1 .0 0
 
G
 
0 .0 0
 
0 .1 0
 
H
 
0 .3 0
 
0 .5 0
 
I
 
0°
 
8°
 
J
 
0 .0 3
 
0 .2 0
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.2
 
WLCS P
-
8
 
Fi g u re 
11
.
2
 
IQS2 2 8 B W L CSP
-
8  Di me n si o ns  (i n mm)
 
Top view
 
Bott om  view
 
Side
 
view
 
P i n 1
 
m
arki ng
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.3
 
DFN
-
6
 
DFN
-
6 Packaging
 
DFN
-
6 Dim ensions 
 
Dimen sion
 
Min
 
Max
 
A
 
3 .0 0m m
 
3 .0 0m m
 
B
 
2 .5 0m m
 
2 .5 0m m
 
C
 
0 .3 0m m
 
0 .3 0m m
 
D
 
0 .3 5m m
 
0 .3 5m m
 
E
 
1 .3 0m m
 
1 .3 0m m
 
F
 
2 .2 0m m
 
2 .2 0m m
 
G
 
0 .0 5m m
 
0 .0 5m m
 
H
 
0 .7 5m m
 
0 .7 5m m
 
I
 
0 .8 0m m
 
0 .8 0m m
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.4
 
MS L Le v e l
 
M oist ure Sensi ti vit y Level
 
(M SL) r elates t o t he packaging and handling precautions f or some 
semiconductor s. TheM SLisanelectr onicst andardf ort het im eper iodinwhicham oist ur esensit ive 
device can be exposed to ambient r oom condit ions ( appr oxim at ely 30°C/85%RH see J
-
STD033C 
f
or m or e inf o)  bef ore r ef low occur.
 
Pac kag e
 
L evel( d u r atio n )
 
TSOT2 3
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
WL CSP
-
8
 
Non
-
e n ca ps u l ate d d e vi ce  

not m o is tu re  se n si tiv e
 
Ref l o w p rofi le  p ea k  
te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
DFN
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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12
 
Datash eet an d Part
-
number I nform ation
 
1 2 .1
 
Orde ring Informa tion
 
O r der swillbesubj ectt oaMO Q(M inim umO r der Q uantity) of af ullr eel. Contactt heoff icialdist r ibut or  

www. azot eq. co
m
. 
 
For  large order s, Azoteqcan provide pre
-
conf igured devices. 
 
ThePart
-
num ber canbegener atedbyusingUSBPr og. exeor t heI nt eract ivePart Num ber gener ator 
on t he websit e. 
 
I C NAM E
 
I Q S228AS
 
=
 
I Q S228 Self  Capacit ive
 
I Q S228B
 
=
 
I Q S228 Self  
Capacit ive
 
CO NFIG URATIO N
 
zzz zzz zz
 
=
 
I C Conf igur at ion( hexadecim al)
 
PACKAG E TYPE
 
TS
 
=
 
TSO T23
-
6 package
 
C
S
 
=
 
WLCSP
-
8 package
 
DN
 
=
 
DFN
-
6 package
 
BULK PACKAG I NG
 
R
 
=
 
Reel 
 
TSO T23
-
6 andWLCSP
-
8: 
3000pcs/ r eel
 
DFN
-
6: 6000pcs/r eel
 
=
 
M OQ = 1r eel 
( or der s shipped asf ull r eels)
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .2
 
Dev ice  Ma rk ing 

T op
 
1 2 .2.1
 
T S OT2 3
-
6 P a ck a ge Ma rk ings
 
There ar e 2 m ar king versions in circulation f or I QS228AS
 
and IQ S228B
:
 
Fi g u re 
12
.
1
:
Fi rs t Ma rki n g  Va ria n t o fIQS2 2 8 AS
 
Fi g u re 
12
.
2
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 AS
 
Fi g u re 
12
.
3
: 
Fi rs t Ma rk i n g Va ria n t o fIQS2 2 8
B
 
Fi g u re 
12
.
4
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 B
 
I C NAM E
 
228A
 
=
 
I Q S228AS Self Capacit ive
 
22
-
A
 
=
 
I Q S228AS Self Capacit ive
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 
t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .2.2
 
WLCS P
-
8  P a ck a ge Ma rk ings
 
Fi g u re 
12
.
5
 
To p Ma rk in g  o f I QS2 2 8 B W L CSP Pa ck a g e
 
I C NAM E
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 

ZZ
 
I C VERSI O N
 
V
 
Product Code
 
PPP
 
1 2 .2.3
 
DFN
-
6  P a c ka ge  
Ma rk ings
 
Fi g u re 
12
.
6
 
IQS2 2 8 B
 
DFN
-
6  Pa c ka g e  To p  Ma rk i n g
 
I C NAM E
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .3
 
T a pe  
a nd Ree l 
S pe c ific a tion
 
Fi g u re 
12
.
7
: TSOT2 3
-
6  T ap e Sp e c ifi ca ti on .
 
Ta b l e 
12
.
1
 
Ta pe  a nd  Re el  Di me n s io n s
 
Dev ic e
 
P ack age
 
Ty pe
 
P ack age
 
D ra wi ng
 
P ins
 
QTY  
per 
reel
 
Reel
 
Di a m ete r
 
(mm )
 
Reel
 
Wi dth
 
W1 (mm )
 
A0
 
(mm )
 
B0
 
(mm )
 
K0
 
(mm )
 
P1
 
(mm )
 
W
 
(mm )
 
P in1
 
Quadrant
 
I QS2
2
8
AS
z zzz zzz zTS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz TS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3
000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz CS R
 
WLCS P 8
 
WLCS P
-
8
 
8
 
3000
 
17 9
 
8. 4
 
1
 
1 . 5 5
 
0. 48
 
4
 
8
 
Q3
 
I QS228Bzz zzz zzz DNR
 
DFN6
 
DFN
-
6
 
6
 
6000
 
330
 
12. 4
 
2. 8
 
3. 3
 
1. 2
 
4
 
12
 
Q1
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Appendi x A.
 
Memory  Map
 
Device Inform ation
 
[ 00H]  PRO D_NR
 
The pr oduct  num berf or the IQ S228A is 39 ( decimal) .
 
[ 01H]  SW_NR
 
Thesof t war eversionnum beroft hedeviceRO Mcanber eadint hisbyte.Thelatestsof t wareversion 
is 29 ( decim al) .
 
[ 10H]  SYSFLA G S0 
 
Bit  7
-
6:  
 
SYSTEM _USE
 
Bit  5: 
 
Logic: 
LogicO utput I ndication
 
0 = Act ive Low
 
1 = Act ive High
 
Bit  4: 
 
Halt :
 
I ndicat es Filt er  Halt st at us
 
0 = LTA not  being Halt ed
 
1 = LTA Halt ed
 
Bit  3: 
 
LP:
 
Low PowerM ode
 
0 = Samplet im e BP
 
1 = Samplet im e LP
 
Bit  2: 
 
ATI:
 
St atus of  aut omat ed ATI r out ine
 
00H
 
Pro d u ct Nu mb e r ( P RO D_ NR)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
39 ( Decim al)
 
R
 
Note
 
01H
 
So f t w are Num b er ( S W_ N R)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
29 ( Decim al)
 
R
 
Note
 
10H
 
Syst em  Flag s (
Sy s_F lag s )
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
~
 
Logic
 
Halt
 
LP
 
ATI
 
ND
 
Zoom
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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0 = ATI is not busy
 
1 = ATI in progr ess
 
Bit  1: 
 
ND:
 
This bit indicatest he pr esence of noise int erf erence.
 
0 = I C has not  det ectedthe presence of  noise
 
1 = I C has det ected t hepresence of  noise
 
Bit  0: 
 
ZOOM : 
Zoom  will indicate f ull
-
speed char ging once an undebounced proxim it y is 
det ected. I n BP m ode, t his
 
will not  changet he charging fr equency.
 
0 = I C not zoom ed in
 
1 = I C det ect ed undebounced pr oxim it y andI C ischar ging at f ull
-
speed ( BP)
 
[ 31H]  St atus
 
Bit  7: 
 
Dycal:  
Dycal Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  6:2:  
 
SYSTEM _USE
 
Bit  1: 
 
Touch: 
Touch Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  0: 
 
Prox:
 
Pr oxim it y Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
31H
 
St atu s
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
DYCAL
 
Touch
 
Pr oxim it y
 
R
 
Note
 
42H
 
Co u n t s_Hig h  ( CS _H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts High Byt e
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Marc h 2022
 
43H
 
Co u n t s_L o w  ( CS_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts Low Byt e
 
R
 
Note
 
83H
 
L T A_High  ( L T A_H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age High Byt e
 
R
 
Note
 
84H
 
L T A_Lo w  ( L T A_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age Low Byt e
 
R
 
Note
 
C4H
 
F u se Bank  0( F B_ 0)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
1
 
f or m ore details
 
R
 
Note
 
C5H
 
F u se Bank  1( F B_ 1)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
2
 
f or m ore details
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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[ C8H]  
Defaul t CommsPoint er
 
Thevaluest or edint hisregist erwillbeloadedintot heCom msPointer at t hest ar tofacom m unicat ion 
window.  For  example, if  t he design only r equir es t he Pr oxim it y St at us inf or m at ion each cycle,  t hen 
t he 
DefaultCom m sPointer
 
. Thiswouldm eant hatatt hest ar tofeach 
comm unicat ion window, t he comm s pointer would alr eady be set t o t he Pr oxim it y St at us r egist er, 
sim ply allowing a READ t or etr ieve t he dat a, wit hout t he need of set t ing up t he address.
 
C6H
 
F u se Bank  2( F B_ 2)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See
 
Table 
3
.
4
 
f or m ore details
 
R
 
Note
 
C7H
 
F u se Bank  3( F B_ 3)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
5
 
f or m ore details
 
R
 
Note
 
C8H
 
DEF AUL T _CO MM S_ PO IN T ER
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
( Beginning of Device Specif ic Data)
 
R/ W
 
Default
 
10H
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Marc h 2022
 
Appen dix B.
 
Errata
 
Filte r 
H
a lt 
T
ime s
 
W

bit isset, t hehalt t im esasspecif iedinSection 
3
 
willbescaled16xlonger,  
due t o added dead t im ewhen t heI C 
cor e is t ur ned off t or educe power  consum ption:
 
Us er Se lec tab le Conf ig urati on O pt ions : Ba nk  1 

F ul l A T I (
0x C5H
)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 320s ec onds
 
01 = 640s ec onds
 
10 = Nev er
 
11 = 48s ec onds
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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Appendi x C.
 
Contact I nform atio n
 
V
isit  
www. azot eq. com
 
f or a list of 
dist r ibut ors and worldwide r epr esent at ion.
 
USA
 
A sia
 
Sout hA f ri ca
 
Physical 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
1 Bergsig Avenue
 
Paar l
 
7646
 
Sout h Afr ica
 
Post al 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
PO  Box 3534
 
Paar l
 
7620
 
Sout h Afr ica
 
T el
 
+1 512 538 1995
 
+86 755 8303 5294
 
ext 808
 
+27 21 863 0033
 
Emai l
 
info@azoteq.com
 
info@azoteq.com
 
info@azoteq.com
 
P
ate nts  
as  l is ted  on  
www. a z oteq.c om /pat ents
-
tr ad ema r k s /
 
may  
r elate  to t he dev ic e or  us ag e of  the  dev ic e
.
 
Az oteq
®
,Cr y s tal Dr iv er

,IQ Sw itc h
®
,Pr ox S ens
e
®
,Pr ox F us ion
®

log o ar e tr ade mar k s  of Az o teq.
 
T h e  in fo r m atio n  in t h is Data sh e e t is b e lie ve d  to  b e a ccu r a te  a t t h e tim e o f p ub lica tio n . Azo te q  u se s r e a son a b lee ff o rt to m a
inta in th e in form a tio n  up
-
to
-
d a te a n d a ccu ra te ,b u t do e s 
n o twarr a n tth e a ccu r a cy,co m p le te n e sso rr e lia b ilityo fthe inf or m a tio n c

o r  warr a n tie s, e xpr e ss or  imp lie d , of a n y kind , inclu d ing  r e pr e se n tatio n s ab o u t th e  su ita b ility o f the se  pr o d u cts o r inf or m a t
ion  for  a n y p ur po s
e .  Azo teq  d iscla im s a ll war r a ntie s a nd 
co n d ition s with  r e g ar d  to  th e se  pr o d u cts a nd  inf o r m a tio n , inclu d ing  b u t no t lim ite d  to  a ll im plie d  war r a n tie s a nd  co n d ition s 
o f m er ch a n ta b ility,  fitn e ss fo r  a  p a r ticu lar  p u r p o se , title 
a n d  n o n
-
infr ing em e n t o f a n y th i
r d  pa r ty int e llectu a l p r o p er ty r igh ts.  Azo te q  a ssum e s n o  lia b ility fo r  a n y d a m a g e s o r  injur y a r isin g  fr om  a n y u se  o f th e  inf o
r m a tion  o r  th e  p r od u ct o r 
ca u se d  b y, with o u t lim ita tio n , fa ilu r e o f pe r form a n ce , e r r or , om issio n , inte r ru p tio n , d e fe ct, de lay in o p
e r a tio n o r tr a n sm issio n , e ve n  if Azo te q  h a s b e e n  a d vised  o f th e p o ssibility of 
su ch  d a m a ge s. T h e  ap p lica tio n s m en tio n e d  he r e in a r e  u se d  so lely fo r  the  p u r po se  o f illustr a tio n  a n d  Azo teq  m a ke s n o  war r a n ty 
o r  r e pre se n ta tio n  tha t su ch  a p p lica tio n s will b e 
su i
ta b le with o u t fur th er  m o d ificatio n , n or  r e com m e n d s th e  u se  o f its pr o d u ctsfo r  a pp lica tio n t h a t m a y pr e se n t a r isk to  h um a n  l
ife  d ue  t o m a lfu n ctio n  or  o th er wise . Azo te q  pr o d u cts 
a r e  n o t au th o r ized  fo r  u se  a s cr itical com p o ne n ts in life  su p p or t d e vices or  s
yste m s. No  lice n se s to  p a te n ts a re  g r a nte d , im p licitly, e xp re ss o r  im p lie d , b y e sto p pe l o r  o the r wise, 
u n d e r a n y inte lle ctu a l p r o pe r ty r igh ts.  In th e e ve n t tha t a n y o f th e  a b o vem e n tio n ed  lim ita tio n s o r e xclusio n s d o e s n o t a p p ly
 
to ta l lia b ility fo r  a ll losse s, 
d a m a g e s an d  ca u se s o f a ction  ( in co n tr a ct,  to r t ( inclu d ing  witho u t lim ita tio n , ne g lig e n ce)  or  o th e r wise)  will n o t e xce e d  th e  
am o u n t a lre ad y p a id b y th e  cu sto me r  fo r  th e  p r od u cts.  
Azo te q  r e se r ve s the  r igh t to  a lter  its p r o d u
cts, to  m a ke  co r r e ctio n s, d e let ion s, m o d ificat ion s, e n h a n ce m en ts,  im p ro ve m en ts a n d  o th er  ch an g e s to  th e  co n ten t a n d  inf o rm a ti
o n, its 
p r o d u cts, p ro g r am s an d  ser vices a t an y time  o r  to m o ve  or  d iscon tin u e a n y co n te nts,  pr o d ucts,  p r og r am s or  ser vices with ou t 
pr ior n o tificatio n . Fo r  t h e  m o st u p
-
to
-
d ate  info r m ation 
a n d  b ind ing T er m s a nd  Co n d ition sp lea se r e fer  t o
 
www.a zo teq .co m
.
 
i nfo@azoteq. com
 
",Units,unit y
" 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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8
AS /B  Dat as heet  
 
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1
 
Marc h 2022
 
IQ S228A
S
/B D AT ASHEET
 
Single channel capacit ive pr oxim it y 
 
and t ouch cont r oller
 
The Pr oxSense
®
 
IQ S228A S/ B
 
is a single channel self
-
capacit ive sensor wit h Dynam ic Calibrat ion 

Feature s
 
>
 
1 Self  capacit ive channel
 
>
 
>
 
Pr oxim it y and Touch output s
 
>
 
Autom at ic Tuning
 
>
 
I nter nal Refer ence Capacit or
 
>
 
M inim um exter nal com ponent s 
 
>
 
1
-
Wire dat a str eam ing 
 
>
 
I
2
C Debug opt ion
 
>
 
User selectable opt ions (O TP):
 
>
 
Ext  sync cont r olor Ext f ilt er contr ol
 
>
 
I /O  Sink or  Sour ce selection
 
>
 
Tim e
-
out f or st uck key
 
>
 
Pr oxim it y and Touc
h sensit ivit y selections
 
>
 
Low Power
 
m odes
 
>
 
Low powerm ode 2. 5

A 
 
>
 
Supply volt age: 1.8V t o 3. 6V 
 
Applicati ons
 
>
 
Pr oxim it y sensors
 
>
 
SAR det ectionf or  Tablets
 
>
 
On
-
ear  det ection f or m obile phones
 
>
 
3D glasses
 
>
 
Personal M edia Player s
 
>
 
Whit e goods and appliances
 
>
 
HumanI nter f ace Devices
 
>
 
Pr oxim it y activat ed backlight ing
 
Ava il a ble  O ptions
 
T
A
 
T SO T 23
-
6
 
WL CS P
-
8
 
DF N
-
6
 
-
20
°
C t o 85
°
C
 
I Q S228AS
 
-
 
-
 
-
40
°
C t o 85
°
C
 
I Q S228B
 
I Q S228B
 
I Q S228B
 
R oH S2
 
Com pl i ant
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
I QS22
8
AS /B  Dat as heet  
 
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Contents
 
I QS 22 8AS /B DA TAS HE E T
 
................................
................................
................................
................................
.....................
 
1
 
1 OVE RV IE W
 
................................
................................
................................
................................
................................
........
 
5
 
1.1
 
D
E V I CE
 
................................
................................
................................
................................
......................
 
5
 
1.2
 
O
P E RATI ON
 
................................
................................
................................
................................
................
 
5
 
1.3
 
A
P P LI CA BI LITY
 
................................
................................
................................
................................
............
 
5
 
2 PACKA GIN G A ND P IN
-
OU T
 
................................
................................
................................
................................
...............
 
6
 
2.1
 
IQ S2 28 AS/ B
 
................................
................................
................................
................................
.............
 
6
 
2.1.1  P in
-
ou t TSOT 2 3
-
6
 
................................
................................
................................
.............................
 
6
 
2.1.2  P in
-
ou
t W LC SP
-
8
 
................................
................................
................................
..............................
 
7
 
2.1.3  P in
-
ou t DFN
-
6
 
................................
................................
................................
................................
....
 
8
 
2.2
 
S
CHE MA TI C
 
................................
................................
................................
................................
................
 
9
 
2.2.1  TSO T 23
-
6
 
................................
................................
................................
................................
..........
 
9
 
2.2.2  W LCS P
-
8
 
................................
................................
................................
................................
.........
10
 
2.2.3  DF N
-
6
 
................................
................................
................................
................................
..............
11
 
3 U S E R CON FI GURA BLE  OPT IONS
 
................................
................................
................................
................................
.....
 
12
 
3.1
 
C
ONFI GURI NG 
D
EV I CE S
 
................................
................................
................................
............................
 
12
 
3.1.1  IQ S2 28 AS/ B Us er 
Se lec tab le O pti ons
 
................................
................................
............................
12
 
4 ME A S URIN G CAPA CI TAN CE US IN G T HE  
C HA RGE T RANS FER
 
ME TH O D
 
................................
................................
..........
 
15
 
................................
................................
................................
................................
......................
 
16
 
6 OPE RA TIN G PR INC IPLE
 
................................
................................
................................
................................
...................
 
17
 
7 CO NFI GURA BLE  S E TTIN GS
 
................................
................................
................................
................................
..............
 
17
 
7.1
 
CT RL:
 
E
XTE RNA L 
C
ONTROL
 
................................
................................
................................
.....................
 
17
 
7.1.1  Char g e H alt
 
................................
................................
................................
................................
......
17
 
7.1.2  Ha lt LT A Fi lter
 
................................
................................
................................
................................
..
17
 
7.1.3  Pu ls e 
o n CTR L:
 
................................
................................
................................
...............................
17
 
7.2
 
LO G IC
 
................................
................................
................................
................................
....................
 
18
 
7.3
 
RF
 
N
OI S E ON 
IQ S228AS /B
 
................................
................................
................................
......................
 
18
 
7.3.1  ND: RF  Nois e Det ec ti on
 
................................
................................
................................
..................
18
 
7.3.2
 
IQ S2 28 AS/ B RF  Nois e Im mun ity
................................
................................
................................
.....
18
 
7.4
 
P
ROXI MI TY  
T
HRE S HOLD
 
................................
................................
................................
............................
 
19
 
7.5
 
T
OUCH 
T
HRE S HOLD
 
................................
................................
................................
................................
.
 
19
 
7.6
 
M
ULTI P LI E RS
 
................................
................................
................................
................................
............
 
19
 
7.7
 
C
HA RGE 
T
RA NS FE R
 
................................
................................
................................
................................
.
 
19
 
7.8
 
T
A RGET 
C
OUNTS
 
................................
................................
................................
................................
.....
 
19
 
7.9
 
E
NA B LE  
P
A RTIA L 
AT I
................................
................................
................................
................................
 
19
 
7.10
 
DY CA L
 
T URBO
 
................................
................................
................................
................................
....
 
20
 
7.11
 
F
I LTE R 
H
A LT
 
................................
................................
................................
................................
..........
 
20
 
7.12
 
L
OW 
P
OWE R 
M
ODE S
 
................................
................................
................................
..............................
 
20
 
7.13
 
Z
OOM
 
................................
................................
................................
................................
....................
 
20
 
8 S T RE A MIN G M ODE
 
................................
................................
................................
................................
.........................
 
21
 
8.1
 
E
V E NT 
M
ODE
 
................................
................................
................................
................................
...........
 
22
 
8.2
 
I
2
C
 
................................
................................
................................
................................
..........................
 
22
 
9 A U TO TU NING IM PLE ME NTAT I
O N (A TI)
 
................................
................................
................................
.........................
 
23
 
9.1
 
F
ULL 
AT I
 
................................
................................
................................
................................
.................
 
23
 
9.2
 
AT I
 
T
A RGET
 
................................
................................
................................
................................
.............
 
23
 
9.3
 
AT I
BAS E
:
 
S
I GNI FI CA NCE OF 
AT I
 
B
A SE
 
................................
................................
................................
........
 
23
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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AS /B  Dat as heet  
 
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9.4
 
S
E NS I TIV I TY  
D
UE  TO 
AT I
 
................................
................................
................................
..........................
 
23
 
9.5
 
AT I
 
P
ROCE DURE
 
................................
................................
................................
................................
......
 
23
 
1 0 DY CA L S PE C IFI C S E TTI NGS
 
................................
................................
................................
................................
............
 
25
 
10.1
 
R
E LE A SE  
T
HRES HOLD
 
................................
................................
................................
............................
 
25
 
10.2
 
I
NP UT
 
E
NA B LE
 
................................
................................
................................
................................
........
 
25
 
1 1 E LE CTR ICA L S PE CIF I CA TI ONS
 
................................
................................
................................
................................
........
 
26
 
11.1
 
A
B S OLUTE  
M
A XIMUM 
S
PE CI FI CA TI ONS
 
................................
................................
................................
....
 
26
 
11.2
 
G
E NE RA L 
C
HA RA CTE RI STI CS
 
................................
................................
................................
..................
 
26
 
11.3
 
O
UTP UT 
C
HA RA CTE RIS TI CS
 
................................
................................
................................
....................
 
27
 
11.4
 
P
A CK A GI NG 
I
NFORMA TION
 
................................
................................
................................
......................
 
28
 
11.4. 1 TSO T 2 3
-
6
 
................................
................................
................................
................................
......
28
 
11.4. 2 WLC SP
-
8
 
................................
................................
................................
................................
.......
29
 
11.4. 3 DFN
-
6
 
................................
................................
................................
................................
............
30
 
11.4. 4 M SL Lev e l
 
................................
................................
................................
................................
......
31
 
1 2 DATAS HE E T A ND PART
-
NU M BE R INF OR MATI ON
 
................................
................................
................................
.........
 
32
 
12.1
 
O
RDE RI NG 
I
NFORMATI ON
 
................................
................................
................................
........................
 
32
 
12.2
 
D
EV
I CE  
M
A RK I NG 

T
OP
 
................................
................................
................................
.........................
 
33
 
12.2. 1 TSO T 2 3
-
6 Pac k age  Mar k ings
 
................................
................................
................................
.......
33
 
12.2. 2 WLC SP
-
8 Pac k ag e Mar k ings
 
................................
................................
................................
........
34
 
12
.2. 3 DFN
-
6 Pac k ag e M ark ings
 
................................
................................
................................
.............
34
 
12.3
 
T
A P E A ND 
R
EE L 
S
PE CI FICA TI ON
 
................................
................................
................................
..............
 
35
 
A P PE ND IX  A . ME M OR Y MAP
 
................................
................................
................................
................................
.............
 
36
 
A P PE ND IX  B . E RRA TA
 
................................
................................
................................
................................
........................
 
40
 
F
I LTE R 
H
A LT 
T
I
MES
 
................................
................................
................................
................................
........
 
40
 
A P PE ND IX  C . C ONTA CT I NF ORMA TI ON
 
................................
................................
................................
.............................
 
41
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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List of Ab brevi ation s
 
ATI
 
Autom at ic TuningI m plem ent at ion
 
BP
 
Boost  Power M ode
 
CS
 
Counts( Number of  Charge Transf ers)
 
C
s
 
I nter nal Refer ence 
Capacit or
 
DYCAL
TM
 
Dynam ic Calibrat ion
 
EM I
 
Electr omagnet icI nter f erence
 
ESD
 
Electr o
-
St atic Dischar ge
 
FTB/ EFT
 
( Electr ical) Fast Transient  Burst s
 
G ND
 
G r ound
 
HC
 
Halt  Char ge
 
LP
 
Low PowerM ode
 
LTA
 
Long Term  Aver age
 
ND
 
Noise Det ect
 
THR
 
Thr eshold
 
TM
 
Touch M ode
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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AS /B  Dat as heet  
 
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1
 
Overvi ew
 
1 .1
 
Dev ice  
 
The 
I Q S228AS/ B 
is a single channel 
capacit ive proxim it y and t ouch device which 
employs an inter nal volt age r egulator and 
r efer ence capacit or ( C
s
).
 
The IQ S228AS/ B device has a dedicat ed 
pin(s)
 
f or  t he connect ion of a sense 
electr ode(s)  ( Cx)  and out put  pin(s)  f or 
proxim it y and t ouch event s on O UT. The 
polarityoft heoutput pinscanbeconf igur ed. A 
1
-
wir e open drain dat a str eam ing pr otocol O R 
I
2
C inter f ace is im plement ed f or  debugging 
pur poses.
 
Special device conf igur at ion can be done by 
sett ingonet im epr ogr amm able(O TP)opt ions. 
 
The device aut om atically t r acks slow varying 
envir onm ent al changes via var ious signal 
processing algor it hm s and has an Autom atic 
Tuning Im plement ation ( ATI ) algor it h
m t o 
calibrat et he device t o t he sense elect r ode.  
 
f orm of hyst er esis t hat can t r ack slow var ying 
envir onm ent al change even while t he sensor 
is in a t ouch st at e. This is ideal f or port able 
applications.
 
The 
char ge 
t r ansf er
 
method of  capacit ive 
sensingisemployedontheIQ S228AS/ B.( The 
char ge t r ansf er pr inciple is t hor oughly 
descr ibed in t he applicat ion not e:  

-
 
1 .2
 
Ope ra tion
 
The device has been designed t o be used in 
applications wher e proxim it y is r equir ed and 
t ouch condit ions can prevail f or an extended 
per iod of t im e which m ay r esult  in 
uncompensat ed dr if t in convent ional 
capacit ive sensor s. 
 
Alowt hresholdisusedtodet e
ct t hepr oxim it y 
of an obj ect,  wit h a higher t hreshold f or  t ouch 
det ection. 
 
Dynam ic Calibrat ion is perf orm ed when a 
TOUCH condit ion is detected f or  longer  t han 
t
DY CA L
. Thehyst er esisalgor it hmwillnowcheck 
f ort her eleasecondit ionoft het ouch,whiles
t ill 
t r acking envir onm ent al changes
 
1 .3
 
Applic a bili ty
 
All
 
specif ications, except wher e specif ically 
m ent ioned ot her wise, provided by t his 
dat asheet
 
are applicable t o t he f ollowing 
r anges:
 
>
 
Tem per at ure:
 
I Q S228AS: 
 
-
20
°
Ct o+85
°
C
 
I Q S228B:  
 
-
40°Ct o+85°C
 
>
 
Supply volt age( V
DDHI
) :  1.8V t o 3. 6V
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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AS /B  Dat as heet  
 
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2
 
Packag ing
 
an d Pin
-
Out
 
TheIQ S228AS/ BisavailableinaTSO T23
-
6package.
 
t heIQ S228BisavailableinTSO T23
-
6
, DFN
-
6
 
or WLCSP
-
8
 
package
 
2 .1
 
IQ S 2 28 AS/ B
 
2 .1 .1
 
P in
-
out
 
T S OT2 3
-
6
 
Fi g u re 
2
.
1
:
Pi n
-
ou t o f I QS2 2 8 AS/B i n  t he  T SOT23
-
6  pa ck a g e.
 
Ta b l e 
2
.
1
: 
Pi n
-
ou t de sc ri p ti o n
 
IQ S22 8AS /B in T SO T 23
-
6
 
Pi n
 
Nam e
 
Ty p e
 
Fu n c ti o n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o rp ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  ca p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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AS /B  Dat as heet  
 
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2 .1 .2
 
P in
-
out WLCS P
-
8
 
Ta b l e 
2
.
2
 
8 
-
pi n  W L CSP Pi n
-
ou t Desc ri pti o n
 
IQ S2
2 8B
 
8
-
p in WL C SP
 
Pin
 
Nam e
 
Ty pe
 
Fu nc tio n
 
1
 
Cx
 
Se n s e e l ec trod e
 
Con n e ct to c o nd uc tiv e  a re a  in te n d e d f o r 
s e ns o r
 
2
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
3
 
VREG
 
Reg u l a to r ou tp u t
 
Req u i res  ex te rn a l c a pa c ito r
 
4
 
VSS
 
Si g n a l GND
 
5
 
INPUT
 
Dig i tal  I n pu t
 
Fl o a ti n g i n pu t d u ri n g ru n ti m e. 
 
Rec o mm en d e d: Con ne c tto  
POUT
 
6
 
POUT 
/ ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
7
 
VDDHI
 
Su p p ly  I np u t 
 
Su p p ly  Vo lta g e I n pu t
 
8
 
PGM
 
Con fi g u ra tio n  pi n
 
Con n e cti on  f o r OTPp ro g ramm i n g. Flo a tin g  in p u t d u ri n g  
ru n tim e . 
 
Rec o mm en d e d: Con ne c tto  
OUT
 
p i n . Pro g ram mi n g c a n 
s ti ll  b e p e rfo rm ed  us i ng  t hi s  pin , p rov i de d  a d i od e  is  
u s e d. (Se e  AZD0 2 6  

Con fi g ura ti o n T o ol s  Ove rvi e w)
 
IQ S228
 
1
 
2
 
3
 
4
 
8
 
7
 
6
 
5
 
Fi g u re 
2
.
2
 
IQS2 2 8 B8
-
p i n W LCSP
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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2 .1 .3
 
P in
-
out
 
DFN
-
6 
 
Fi g u re 
2
.
3
: Pi n
-
o u t of IQS2 2
8B
 
i n  DFN
-
6 p a ck a ge .
 
Ta b l e 
2
.
3
:Pi n
-
ou t de sc ri p ti o n .
 
IQ S22 8
B
 
6
-
p in DF N
 
Pin
 
Name
 
T ype
 
F u n ctio n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  
c a p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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21
 
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2 .2
 
S c he ma tic
 
2 .2 .1
 
T S OT2 3
-
6
 
Fi g u re 
2
.
4
: 
Typ i ca l  ap p li ca ti on re fe re nc e s ch e ma tic  o fIQS2 28 AS/B. C2 &C3 are  op ti on a l for a d d ed  RF i mmu n i ty .
 
Fi g u re 
2
.
5
: 
IQS2 2 8 AS/Bo u tp ut p i n c o nfi gu ra tio n
 
fo r I 2 C de bu g  o pe ra tio n ,o r d riv in g  L EDs  (a c tiv e h i g h o r lo w o p ti o n  
a v a il a bl e ).
 
Where a syst em  level ESD st r ike is f ound t o cause t he I C t o go int o ESD induced latch
-
up, it  is 
suggest edt hatt hesupplycurr ent t ot heI Q S228ICislim it edbym eansof ase
r iesr esist or t hat could 
lim it  t he m axim um supply curr ent t ot heI C t o <80m A.
 
Ref e r t o  AZD0 0 8 fo r 
to u ch  k ey  de si g n
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2 .2
 
WLCS P
-
8
 
Fi g u re 
2
.
6
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
WL CSP
-
8  Pac k ag e
. C2 &C3 a re  o pti on a l  fo r ad d e d RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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AS /B  Dat as heet  
 
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2 .2 .3
 
DFN
-
6
 
Fi g u re 
2
.
7
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
DFN
-
6  Pa ck a ge
. C2 &C3a re  o p ti o n al  f o ra d de d  RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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3
 
User Co nfigur able Options
 
This section list
s t he user  conf igur able 
sett ings.
 
The
 
deviceisf ullyf unct ionalinit sdef aultst at e, 
but  som e applications may r equir e alt ernat ive 
conf igur ation sett ings.  These sett ings are 
enabled by conf igur ing O ne Tim e 
Pr ogr amm able( O TP)  user opt ions.
 
Conf igur ation c
an be done on packaged 
devices or in
-
cir cuit.  I n
-
cir cuit conf igur at ion 
m ay be lim it ed by values of ext ernal 
components chosen.
 
Popular conf igur at ions ar e available ex
-
st ock 

please check wit h t he local dist r ibutor f or 
availabil it y.  Azoteq can supply pre
-
c
onf igur ed 
devices f or  large quant it ies. 
 
3 .1
 
Configuri ng Dev ic es
 
Azoteqof f er saConf igurationTool( CT210/ 20) 
and accom panying software ( USBPr og. exe) 
t hat can be used t o progr am t he O TP user 
opt ions f or  pr otot yping purposes. M or e det ails 
r egarding t he conf igur at ion of t he device wit h 
t he USBPr og progr am  is explained by
 
application not e: 

AZD007 

USBPr og 
O verview

which can be f ound on t he Azot eq 
websit e. 
 
Alt ernat ive pr ogr am m ing solutions f or  t he 
I Q S228AS/ B also exist . For  f ur t her  enquir ies 
r egarding t his, please cont act  Azot eq at 
Pr oxSenseSuppor t @azot eq. com or t he loc
al 
dist r ibut or
 
3 .1 .1
 
IQ S 2 28 AS/ B Use r Se le c table O ptions
 
Ta b l e 
3
.
1
: 
IQS2 2 8 AS/B Ba nk 0  Us e r Se l ec ta bl e  Opti o ns  (0xC4H)
 
Bi t
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Name
 
I N_EN
 
REL
T HR
 
LOGI C
 
T
T HR 2
 
T
T HR 1
 
T
T HR 0
 
P
T HR 1
 
P
T HR 0
 
bi t 7
 
I N_E N: 
I nput E nable
 
S ect ion 
10. 2
 
0 = Out put  (P rox imi ty )
 
1 = I nput
 
bi t 6
 
RE L
T HR
: 
Releas e Thres hold
 
S ect ion 
10. 1
 
0 = 75%
 
1 = 87%
 
bi t 5
 
LOGIC:
 
Out put logics elect  (Only when S TREA MI NGmode is  
dis abled) 
 
S ect ion 
7. 2
 
0 = S of t ware Open Drain Act iv e Low
 
1 = Act iv e High
 
bi t 4
-
2
 
T
T HR
:
 
Touc h Thres holdS elect ions
 
S ect ion 
7. 5
 
000 = 72/ 256
 
001 = 4/ 256
 
010 = 8/ 256
 
011 = 24/ 256
 
100 = 48/ 256
 
101 = 96/ 256
 
110 = 128/ 256
 
111 = 160/ 256
 
bi t 1
-
0
 
P
T HR
: 
P rox imi ty Thres hold S elec t ions  
 
S ect ion
 
7. 4
 
00 = 4
 
01 = 2
 
10 = 8
 
11 = 16
 
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Ta b l e 
3
.
2
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Fu l l  ATI (0x C5H)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
Not used
 
Bank1: bi t 3
 
T URBO:
 
DY CA LTURB O
 
S ect ion 
7. 10
 
0 = Dis abled
 
1 = E nabled
 
Bank1: bi t 2
-
0
 
BAS E : 
B as e V alue 
 
S ect ion 
9. 3
 
000 = 200
 
001 = 50 
 
010 = 75
 
011 = 100
 
100 = 150
 
101 = 250 
 
110 = 300
 
111 = 500 
 
Ta b l e 
3
.
3
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Pa rti a l AT I
 
t
HA LT 1
 
t
HA LT 0
 
M ULT
S E NS E 1
 
M ULT
S E NS E 0
 
M ULT
COMP 3
 
M ULT
COMP 2
 
M ULT
COMP 1
 
M ULT
COMP 0
 
bit  7
 
bit  0
 
Bank1:7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
MULT
: Mult iplier f orS ens it iv ity
 
S ect ion 
7. 6
 
00
 
01
 
10
 
11
 
Bank1: bi t 3
-
0
 
MULT: Mult iplierf or Compens at ion
 
S ect ion 
7. 6
 
0000 t o 1111
 
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Ta b l e 
3
.
4
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  2  (0x C6H)
 
STREAM
 
TRANS
 
CO MM S
 
ND
 
Tar get
 
ATI
 
LP
1
 
LP
0
 
bit  7
 
bit  0
 
Bank2: bi t 7
 
ST RE AM: 
St eami ng Met hod 
 
S ect ion 
8. 2
 
0 = 1
-
wire
 
1 = 2
-
wire (I
2
C)
 
Bank2: bi t 6
 
T RANS : 
Charge Trans f er Frequenc y 
 
S ect ion 
7. 7
 
0 = 512k Hz
 
1 = 250k Hz
 
Bank2: bi t 5
 
COMM S :
 
St reami ng
 
S ect ion 
8
 
0 = Dis abled
 
1 = E nabled
 
Bank2: bi t 4
 
ND:
 
Nois e Det ec t
 
S ect ion 
7. 3
 
0 = Dis abled
 
1 = E nabled (1
-
wire c omms  only )
 
Bank2: bi t 3
 
T arget:
 
A TI t arget c ounts
 
S ect ion 
7. 8
 
0 = 1200
 
1 = 1024
 
Bank2: bi t 2
 
ATI
: A TI S elec t ion
 
S ect ion 
7. 9
 
0 = Full 
 
1 = P art ial
 
Bank2: bi t 1
-
0
 
LP
: P owermode S elect ion
 
S ect ion 
7. 12
 
00 = BP , 9ms  (64ms if z oom is disabled) 
 
01 = NP,  128ms
 
10 = LP 1,  256ms
 
11 = LP 2,  512ms
 
Ta b l e 
3
.
5
: 
Us e r Se l ec ta bl e  
Con fi g u ra ti on  Opt io n s: Ba nk  3  (0x C7H)
 
~
 
~
 
~
 
~
 
Zoom
 
~
 
~
 
CTRL
 
bit  7
 
bit  0
 
Bank3: bi t 7
-
4
 
S ystem  Use
 
Bank3: bi t 3
 
Zoom : 
Zoom Dis able
 
S ect ion 
7. 13
 
0 = ZoomE nabled
 
1 = Zoom Dis abled
 
Bank3: bi t 2
-
1
 
S ystem  Use
 
Bank3: bi t 0
 
CT RL: 
Cont rolI nput  
 
S ect ion 
7. 1
 
0 = Halt Charge
 
1 = Filt er Halt
 
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4
 
Measuri ng 
C
a pacit ance 
U
sing th e 
Cha rge Tran sfer
 
M
etho d
 
The 
char ge 
t r ansf er
 
m ethod of  capacit ive 
sensing is em ployed onthe IQ S228AS/ B.
 
A char ge cycle is used to t ake a m easur em ent 
of t he capacit ance of t he sense elect r ode 
( connect ed t o Cx) r elative t o ground. It consist s 
of a ser ies of pulses char ging Cx and 
dischar ging 
Cxt ot her eferencecapacit or , at t he 
char get r ansf erf r equency( F
CX
 
-
 
r ef ert oSection 
11
) . Thenum ber of t hepulsesr equir edt or each 
a t r ip volt a
ge on t he refer ence capacit or is 
r efer r edt oast he 
Count  
value( CS) whichist he 
instant aneous capacit ive m easur ement . The 
Counts ( CS)  ar e used to det er m ine if  eit her a 
physical cont act  or proxim it y event  occurr ed, 
based on t he change in CS det ect ed. The 
t ypical values of CS, wit hout a t ouch or  
proxim it y condit ion r ange bet ween 1344 and 
1865 counts,  although higher and lower counts 
can be used based on t he application 
r equir ement s.  With CS larger t han +/
-
1865 t he 
gain of t he syst em  may become t oo high 
caus
ing unst eady oper ation.
 
The I Q S228AS/ B schedules a char ge cycle 
ever y t
SA MP LE
 
seconds t o ensure r egular 
samples f or  pr ocessing of r esult s.  The dur at ion 
of t he char ge cycle is def ined as t
CH A RGE
 
and 
variesaccordingt ot hecountsr equir edt or each 
t he tr ip 
volt age.  Following t he char ge cycle 
other activit ies such as dat a st r eam ing is 
completed ( if  in str eam ing m ode) ,  bef ore t he 
next  char gecycle is init iat ed.
 
Pl easenot e: A tt achingaprobet ot heCxpi n 
w il l i ncrease t he capacit ance of t he sense 
plat e and t h
eref ore C
S
.  T his may have an 
i mmediat e i nf l uence on t he Counts val ue 
( decrease t
CH AR GE
) and cause a proximit y or 
t ouchevent .
 
Af t er t
HA LT
 
secondst hesyst em will 
adj ust t o accomm odate f or t his change. I f t he 
t otal load on Cx,  wit h t he probe at t ached is st ill 
lowert hant hem aximumCxloadt hesyst emwill 
cont inuet of unct ionnor mallyaft ert
HA LT
 
seconds 
wit h t he probe att ached.
 
Fi g u re 
4
.
1
: 
Cha rge  cy cl e s a s ca n  b e s ee n  on  CX.
 
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Fi g u re 
5
.
1
: 
DYCAL  Ope ra ti o n (Se l f Capa c iti ve  Se ns in g )
 
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6
 
Operatin g Prin ciple
 
Figur e 5.1 is a visual r epr esent ation of  t he 
DYCAL f unct ionalit y. The O UT pin is used t o 
indicate t he st atus of a DYCAL event  ( bot h 
proxim it y a
nd a t ouch event) . The DYCAL 
f unct ionalit y is sum m ar ised below.  
 
Non
-
T ouch M ode
 
The O UT pin is act ivated on t he successf ul 
det ection of a pr oxim ity event and will r emain 
activat edf ort hedur ationoft heproxim it yevent , 
per m itt ing t hat  t his event is no lo
nger t han t he 
f ilt er halt  t im ings.  The LTA will be halt ed in t his 
t im e.
 
Assoonasat ouchcondit ionisdet ect ed( Count 
values, orCS, f allbelowT
T HR
) , t hecont r ollerwill 
dynamically r e
-
calibrat e it s LTA t o t he halted 
LTA 

T
T HR
.  The I C is now in TouchM ode. 
 
T ouch M ode
 
Af t er t he re
-
calibrat ion of t he LTA, it will f ollow 
t he Count s ( CS) and be allowed t o t r ack slow 
varying envir onm ent al changes. I f t he Counts 
( CS)  were t o exceed t he LTA by t he r elease 
t hreshold ( REL_T
T HR
) t he tou
ch det ect ion will  
st op and t he O UT pin will r etur n t o it s or iginal  
st ate.
 
7
 
Configur able S ettin gs 
 
This section descr ibes t he user  conf igur able 
opt ions oft heI Q S228AS/ B inm ore det ail. 
 
User progr amm able options are selected by 
conf igur ing t he O TP select ion
s. Please r ef er t o 
Section 
2.2. 2
 
f oranover viewoft heconf igur able 
sett ings.
 
7 .1
 
CT RL: Ex ternal Control
 
T he user has t he opt ion t o cont rol some  
parame
t ers of  t he I Q S228AS/B f rom an 
ext ernalsource. T heI Ccanbeusedindef au lt  
mode (CTRL unc onn ect ed) or t he user ca n  
use t he CT RL pin t o select  whet her t he 
mast er should halt  t he charge t ransf ers (i.e.  
st opoperat ion)ort ohal t LT A
 
f ilt ert rackingon  
t he
 
I Q S228AS/B.
 
7 .1 .1
 
Cha rge  Ha lt
 
I f  CT RL is sampled high f or lon ger t han  
T
EXT _H ALT,  
t he charge co nversion cycle w ill be  
halt ed,  once t h e current  conversion has be en  
complet ed.  T he devic e will rema in in t hi s  
st andby mode unt il t he CT RL line is sampled  
low 
aga in.  An aut omat ic reseed is perf ormed  
direct lyaf t erCT RLisreleasedt ocompensat e  
f or any enviro nment al changes w hich mi ght  
have occurred d uring t h e st andby mode.
 
7 .1 .2
 
Hal t LT A 
F
il te r
 
W hen conf igured in t his  mode,  CT RL can be 
used t o cont rol t he LT A halt  t i
mes when  
sampledhig h. T heCT RLpinhasprecedence  
over t he conf ig urat io ns bit s select ed f or t h e  
halt  t imings.
 
I f  CTRL is sam pled high f or longer  t han 
T
E X T _HA LT
,  t he f ilt er will be halt ed unt il t his pin is 
sampled low.
 
.
 
Fi g u re 
7
.
1
: 
Ma s te r Out p u t s ig na l  o n CTRL  p in  t o  Ha l t Op era tio n  o r Fi l te r Ha l t
 
7 .1 .3
 
P uls e  on CT RL:
 
T he pulse on t he CT RL pin needs t o adher e  
t o t he f ollowing t imin g const r
aint s:
 
25ms  <  T
PULSE 
<  35ms
 
7.1. 3. 1
 
I Q S228A S/ B:  Reseed
 
A reseed co ndit io n can be init iat e d by  
generat i ngap ulseo nt heCT RLpin. T heLT A  
will b e reset  t o t he coun t ,  f orcing t he O UT  pin 
t o it s original st at e.  
 
I f  t he count  value is out side it s allow abl e  
limits,  t he device will f orce an AT I  event  t o 
reset  t he syst em sensitivit y.  (Please ref er t o 
sect ion 
8. 1
 
f or more det ail).
 
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7.1. 3. 2
 
I Q S228A S/ B:  re
-
AT I
 
Ar e
-
ATIcondit ioncanbeinit iatedbygener at ing 
a pulse on t he CTRL pin. This f unct ion can be 
issued at anyt im e.
 
Fi g u re 
7
.
2
: 
Ma s te r Out p u t s ig na l  o n CTRL  t o fo rce  a  Res e ed Con d i ti o n
.
 
7 .2
 
LOG IC 
 
Thelogicusedbyt hedevicecanbeselectedas 
active HIG H or act ive LOW.  The out put  pins 
O UT and CTRL will f unct ion based on t his 
selec
t ion.  When conf igured as Act ive High, t he 
out put swillr emainhighaft er PO Runt ilATIhas 
completed.  The ATI t im e will vary accor ding t o 
t he capacit ive load on t he sensor,  but  t ypically 
does not exceed 500ms.
 
Co n f igu ratio n :  
Bank0
 
b it 5 :  Lo g icO u t p u t  
Sele ctio n
 
Bi t
 
Select i on
 
0
 
Soft ware O pen Dr ain Active Low
 
1
 
Act ive High 
 
Asoft war eopendrainout put isim plement edf or 
t he O UT pin when configured in active low 
m ode. The volt age on t he pull
-
up r esist or  is 
lim it ed t o t he 
I Q S228AS/ B supply volt age.  A 
4k7
-

is 
r ecomm ended.
 
7 .3
 
RF Nois e  on I QS 2 28 AS/ B 
 
7 .3 .1
 
ND: RF Nois e  De tec tion
 
The IQ S228AS/ B has RF Noise Detect ( ND) 
f unct ionalit y. I f ND f unct ion is enabled, t he 
I Q S228AS/ B is able t o detect RF Noise 
on t he 
TOUT/ ND pin. Furt her details on t he wor king of 
t his can be f ound in the Application Not es: 
AZD015 and AZD015b. 
 
Note:  ND input enable is a legacy input and is 
not  r ecomm ended f or  use in new designs. The 
input has been desensitized by def ault and 
is 
not t estedt otr iggerataspecif icRFinputpower 
level
 
7 .3 .2
 
IQ S 2 28 AS/ B RF Noise  I mmunity
 
TheI Q S228AS/ Bhasadvancedim m unit yt oRF 
noisesour cessuchasGSM cellulart elephones, 
DECT, Bluet oot h and WI FI  devices. Design 
guidelines should however be f ollowe
d t o 
ensure t he best noise im m unity.  The design of 
capacit ivesensingapplicationscanencom pass 
alarger angeof sit uat ionsbut asasum m ar yt he 
f ollowing should be not ed t o im prove a design:
 
>
 
Aground pla nesh oul db eplac edu ndert h e  
I C,  except  under t he 
Cx line.
 
>
 
All t he t racks on t he PCB must be kept as 
short  as possible.  
 
>
 
T he capacit or bet we en  VDDHI  and G ND  
as well as bet ween VR EG and G ND,  must  
be place d as close as p ossible t o t he I C.
 
>
 
A 100 pF capacit or should be place d in  
parall el wit h t he 1uF  capacit o
r bet wee n  
VDDHI andVSS.Anot her100pF capacit or  
can be p laced in par allel wit h t he 1 uF  
capacit or bet we en VRE G  and G ND.
 
>
 
I f  t he device is t oo sensit ive f or a specif ic  
orderopt ion,
 
aparas it iccapacit or(
t ypicall y
 
20pF ) can be added b et ween t he Cx line  
and
 
grou nd.
 
>
 
Proper sense elect rod e  and but t on desig n  
princip les must  be f ollo wed.
 
>
 
Unint ent i onal co upl ing of  sense elect rod e  
t o ground an d ot her  circuit ry must  be 
limited by increasin g t he dist ance t o t hese 
sources.
 
I n som e inst ances a ground plane som e 
dist an
ce fr om t he device and sense electr ode 
m ay provide signif icant  shielding f r om 
undesir ed inter f er ence. 
 
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When t he capacit ance bet ween t he sense 
electr ode and ground becom es t oo lar ge the 
sensit ivit y of t he devicem ay be influenced.
 
7 .4
 
P rox imi ty 
T hre s hold
 
T he 
I Q S228AS/ B
 
has 4 proximity t hreshol d  
set t ings indicat e d in c ount s.  T he proximity 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired sensit ivit y and noise immunit y.  A 
proximityevent ist rigge redif t heCount s(CS) 
diverges more t han 
t h e select ed t hreshol d  
f rom t he LT Af or 6 consecut ive cycles.
 
Conf i gurat i on:  
Bank0
 
bi t 1
-
0 
P
T HR 1
:P
T HR 0
: Proximi t yThresholds
 
Bi t
 
Select i on
 
00 
 
4
 
01 
 
2
 
( M ost sensit ive)
 
10 
 
8
 
11 
 
16
 
( Least sensit ive)
 
7 .5
 
T ouchT hre s hold
 
T he 
I Q S228AS/B has 8 t ouch t hreshol d  
set t ings indicat ed i n  count s.  T he t ouch 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired t ouch se nsit ivit y.  A t ouch event  is 
t riggered if  t he Count s  (CS) diverges more 
t han t he select ed t hres hold f rom t he LT A f or
 
2 consecut ive cycles
. 
 
I nt heNO
-
T O UCHst at et heCount s(CS)must  
diverge mor e t han t he t ouch t hresho ld val ue  
below
 
t he LT A. O perat ing in t he T O UCH  
ST AT E,  t he CS must diverge more t han 
REL_T
T HR
 
of  t he t ouch threshol d valu e 
abov e
 
t he LT A
.
 
The f ollowing equ
ation is used t o det erm ine if  a 
t ouch or r elease event  occurr ed.
 
NO  TO UCH STATE:
 
LTA
 
CS<=
 
T
T HR
 
TOUCH STATE:
 
CS 
-
 
LTA
 
>=
 
REL_T
T HR
 
Conf i gurat i on:  
Bank0
 
bi t 4
-
2T
T HR 2
:T
T HR 0
 
T ouchT hreshol ds 
 
T
T HR 2
:T
T HR 0
: 
Touch Thr esholds 
 
Bi t
 
Select i on
 
000 
 
72/ 256
 
001 
 
4/256( M ost sensit ive)
 
010 
 
8/256
 
011 
 
24/ 256 
 
100 
 
48/ 256
 
101 
 
96/ 256
 
110 
 
128/256
 
111 
 
160/256( Least sensit ive)
 
7 .6
 
Multipli e rs
 
Whenusingpar t ialATI,thebasevalueissetup 
using t he m ult ipliers.  Com pensat ion will st ill be 
add
ed aut om aticallyt oreach t he t ar get.
 
7 .7
 
Cha rge T ra ns fer
 
The char ge t r ansf er f r equency of t he 
I Q S228AS/ B is adj ustable. Changing t he 
t r ansf er f r equency will aff ect  sensit ivity and 
r esponser ate.  Two opt ions ar e available:
 
Conf i gurat i on:  
Bank2
 
bi t 6
 
T RA NS:
 
Char ge Tr ansf er  Frequency
 
Bi t
 
Select i on
 
0
 
512kHz
 
1
 
250kHz
 
7 .8
 
T a rge t Counts
 
The t arget  oft he ATI algorithm can be adj ust ed 
bet ween1200( def ault )and1024count s. When 
less sensit ivit y is r equir ed, t he lower counts wil
l 
also incr easer esponse rate:
 
Conf i gurat i on
: 
Bank2
 
bi t 3
 
T arget :
 
ATI t ar get counts
 
Bi t
 
Select i on
 
0
 
1200
 
1
 
1024
 
7 .9
 
E na ble P a rtial ATI
 
I n some applications t he st art up t im e of t he 
I Q S228AS/ B m ay be r equir ed t o be decr eased. 
This is 
possible by enabling par t ial ATI,  if  the 
m ult ipliers r equir ed can be det erm ined, and t he 
compensat ion alone is adequate t o account  f or 
envir onm ent al change.
 
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Conf i gurat i on:  
Bank2
 
bi t 2
 
AT I:
 
Par t ial ATI
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enab
led
 
7 .1 0
 
DYCAL T URBO
 
I n som e applications, it m ay be r equir ed t o 
im provet heent ryandexit speedofTouchM ode 
by r em oving t he ent ry r eseed delay, as well as 
t urning of f t he AC
-
f ilt er s. This can be done by 
enabling t he DYCAL TURBO m ode.
 
Conf i gurat i on:  
Bank1
 
bi t 3
 
T URBO:
 
DYCAL TURBO
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enabled
 
Notet hatifDycalTur boisenabled,t heLTAwill  
halt  at t he r eseed point for t
HA LT
 
if Touch M ode 
isent er edbef or eapr oxim it yevent isr egist ered.
 
7 .1 1
 
Filte r Ha lt
 
The 
LTA
 
f ilt
er only executes while no proxim it y 
events ar e det ect ed to ensure com pensat ion 
only f or envir onm ent al changes. O nce a t ouch 
eventisdet ect edt hef ilt erwillr esumeoper ation 
and will no longer  be halt ed.  The halt t im ing 
conf igur ation sett ings determ ine ho
w long t he 
f ilt er is halt ed.
 
Conf i gurat i on:  
Bank1
 
bi t 7
-
6
 
Bi t
 
Select i on
 
00 
 
20 seconds
 
01 
 
40 seconds
 
10 
 
Never
 
11 
 
3 seconds
 
T he presenc e of  a pro ximity condit ion f or a 
t ime exceeding t he halt  t ime will be deemed 
as a f ault  st at e which w ould t rigg er a resee d  
event whereaf t ert heou t put st at eont heO UT 
pin wil l be reset  t o it s original co ndit io n.  
 
7. 12
 
Low P owe r Modes  
 
There exist  4
 
LP m odes.  The LP m odes will  
decr ease t he sam pling fr equency of  CS which 
will r educe t he 
power consumpt ion
 
of  t he 
device. However , t his will also increase t he 
r esponset im e of t he device.
 
Conf i gurat i on:  
Bank2
 
bi t 1
-
0
 
Bi t
 
Select i on
 
00 
 
9.1m s ( BP)  64m s if  Zoom  disabled
 
01 
 
128ms( Norm al Power Mode)
 
10 
 
256ms 
( Low PowerM ode 1)
 
11 
 
512ms( Low PowerM ode 2)
 
7 .1 3
 
Zoom
 
The I Q S228AS/ B has t he opt ion t o disable t he 
zoom f unct ion. Thism eanst hat t hesam plet im e 
will st ay f ixed,  even when proxim ity and t ouch 
events are m ade. When t his is activat ed, boost 
power m ode 
will change fr om a 9m s sample 
t im e, t o 64m s.
 
Conf i gurat i on:  
Bank3
 
bi t 3
 
Zoom:
 
Zoom Disable
 
Bi t
 
Select i on
 
0
 
Enabled 
 
1
 
Disabled
 
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8
 
Streami ng Mo de
 
F or a more complet e d escript ion of  t he dat a  
st reamingprot ocol, pl ea seref ert oApplicat
ion  
Not e AZ D017 on t he Azot eq websit e.
 
T heIQ S228AS/Bhast hecapabilit yt ost ream 
dat at oaMCU.T hisprovidest hedesignert he  
abilit y t o obt ain t he p a ramet ers and sensor  
dat a wit hin t he device in order t o aid design  
int oappl icat ions. Dat as t reamingis 
perf ormed  
as a 1
-
wire dat a prot ocol on t he O UT  pin O R 
I
2
Cint erf ace.T heout put f unct ionof t hispinis 
t heref orelost whent hedeviceisconf iguredi n  
st reaming mode.  Dat a Str eaming can be  
enab led as ind icat ed be low:
 
Conf i gurat i on:  
Bank2
 
bi t 5: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
Disabled 
 
1 
 
Enabled
 
Figur e 
8
.
1
 
illust rat es t he communicat io n  
prot ocol f or init ialisin g and sending dat a wit h  
t he 1 wire communicat i on prot ocol.  
 
1.
 
Communicat i ons init i at e d by a ST ART 
bit .  Bit  def ined as a lo w condit io n f or  
T
S
T ART
. 
 
2.
 
F ollowi ng t he ST ART  bit , is a 
synchronisat i on byt e (T
INI T
 
= 0xAA).  
T hisbyt eisusedbyt heMCUf orclock 
synchronisat i on.
 
3.
 
F ollowi ng T
I NIT
 
t he dat a byt es will be  
sent .  8 Bytes will be sent  af t er each 
charge cycle.
 
4.
 
Each byt e sent  wi ll be  precede d by 
a 
ST ART  bit  and a ST OP bit  will f oll ow  
every byt e.  
 
5.
 
ST O P bit  indicat ed by  t aking pi n 1  
high.  T he ST O P bit does not  have a 
def ined p eriod.
 
Fi g u re 
8
.
1
: 
D
e b ug : 1
-
wire  strea mi n g  De bu g  Mo d e
.
 
Thef ollowingt abledef inest hebitdef init ionsf or 
t he IQ S228AS/ B devices dur ing Str eam ing 
M ode.
 
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®
 
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Ta b l e 
8
.
1
: 
By te  De fin i tio n s f o rStre a mi n g  Mo de
 
Byt e (B)
 
Bit
 
Value
 
0
 
AA
 
1
 
7 :0
 
CS Hig h  by te
 
2
 
1 5 :8
 
CS L o w b y te
 
3
 
2 3 :1 6
 
L TA Hig h b y te
 
4
 
3 1 :2 4
 
L TA L o w by te
 
5  Sy s
 
Fl a gs
 
39
 
38
 
37
 
36
 
35
 
34
 
33
 
32
 
~
 
~
 
Ac ti ve  Hi gh
 
Fi l te r Ha l t
 
L P a c ti v e
 
ATI  Bu sy
 
Noi s e Fo u nd
 
In  Z o om
 
6
 
47
 
46
 
45
 
44
 
43
 
42
 
41
 
40
 
To u ch
 
Pro x im i ty
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
7
 
5 5 :4 8  
 
Com p e ns a ti o n 
 
8
 
6 3 :5 6
 
Cou n te r 
 
8 .1
 
E v e nt Mode
 
TheIQ S228AS/ BhasEvent M odeim plem ent ed 
dur ing 1
-
wir e comm unication. This allows t he 
M CU t o m onit or t he PO UT pin 
f or  st at us 
changes ( pr oxim ity or t ouch m ade or r eleased 
events) instead of  capt uring dat a cont inuously.  
Uponast at uschange,t heIQ S228AS/ Bwillpull 
t he PO UT pin f or  low t o indicate t o t he M CU t o 
r eaddat a.ThePO UTpinwillst aylowf or1.6m s.
 
8 .2
 
I
2
C
 
The I
Q S228AS/ B also allow f or I
2
C st ream ing 
f ordebugging.DataSt reamingcanbechanged 
f r om  1
-
wir e pr otocol t o I
2
C as shown below:
 
Conf i gurat i on:  
Bank2
 
bi t 7: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
1
-
Wire Pr otocol
 
1 
 
I
2
C St r eam ing
 
The M em ory M ap f or t he IQ S228AS/ B can be 
f ound in 
Appendix A
. 
 
The IQ S228AS/ B can comm unicat e on an I 2C 
 
ll
-
upr esist or sshouldbeplacedonSDAandSCL.
 
The Contr ol byt e indicates t he 7
-
bit device 
address ( 0x44H) and t he Read/Wr it e indicator 
bit .
 
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9
 
Auto T uning Imp le mentatio n (AT I)
 
ATI is a sophist icated t echnology im plement ed 
in t he latest  
gener ation Pr oxSense
®
 
devices 
t hat  opt im ises t he per f orm ance of  t he sensor  in 
a wide r ange of applications and envir onm ent al 
condit ions (r efer  t o application not e AZD0027 
-
 
Auto TuningI m plem ent at ion) . 
 
ATI m akes adj ust ment s t hr ough ext ernal 
r efer ence capa
cit or s unnecessar y ( as r equir ed 
by m ost  ot her  solutions)  t o obt ain opt im um 
per f or m ance.
 
9 .1
 
Full AT I
 
The IQ S228AS/ B im plem ent s an aut om at ic ATI  
algor it hm. This algor it hm aut om atically adj ust s 
t he ATI par am eter s t o opt im ise t he sensing 
electr odes connect ion t o 
t he device.  
 
The device will execute t he ATI algor it hm 
whenever t he device st ar t s
-
up and or when t he 
counts ar e not wit hin a pr edeter m inedr ange. 
 
There are 2 im port ant  def init ions t o under st and 
f or ATI:
 
9 .2
 
AT IT a rge t
 
ATI adj usts int ernal cir cuit r y accor ding t o t wo 
par amet ers,  t he 
ATI multi pli er
 
and t he 
AT I 
compensati on
. 
 
>
 
The 
ATI mul ti pli er
 
can be viewed as a 
cour seadj ust m entoft heCounts( CS) ,used 
t o achieve t he ATI BASE value.  
 
>
 
The 
ATIcompensat i on
 
isaf ineadj ust
m ent 
used t o r eacht he ATI  TARG ET value. 
 
With t hese t wo par ameters t he Count s ( CS)  of 
t he IQ S228AS/ B is t uned unt il an ATI t ar get 
value of 1200 is achieved.
 
9 .3
 
AT I
BASE
: Si gnifica nc e of AT I Bas e
 
Asm ent ionedabove, t he 
ATImul ti pli er
 
isused 
t o select a base 
value f or t he ATI. The ATI 
BASEvalueisim port ant ,asthisdet erm inest he 
sensit ivit y of t he device.  The sensit ivit y can be 
def ined as:
 
Sensit ivit y = ATI TARG ET / ATI BASE
 
TheATITar getr emainsfixedat1200anditcan 
t hus be seen f r om t his t hat a large
r  base value 
will r esult  in a less sensit ive device.  The 
designer has t he opt ion t o incr ease/r educe the 
sensit ivit y of t he syst em  t hrough t he ATI BASE 
value.  For  m ost  applications t he ATI BASE 
should be kept  def ault .
 
The opt ions f or  t he ATI BASE values are
 
as 
f ollows:
 
Conf i gurat i on:  
Bank1
 
bi t 2
-
0
 
Bi t
 
Select i on
 
000
 
200
 
001
 
50
 
010
 
75
 
011
 
100
 
100
 
150
 
101
 
250
 
110
 
300
 
111
 
500
 
9 .4
 
S e ns itivity  
D
ue  to ATI 
 
Theadj ust m ent of t heATI par am et erswillr esult  
in variat ions in t he count and sensit ivi
t y. 
Sensit ivit y can be observed as t he change in 
count as t he r esult of a 
f ixed
 
change in sensed 
capacit ance. The ATI param et ers have been 
chosen t o provide signif icant over lap.  I t m ay 
t her ef ore be possible t o select var ious 
combinat ions of  ATI m ult iplier and ATI  
compensat ion set t ings to obt ain t he sam e 
count. Thesensit ivit yof the 
variousopt ionsm ay 
however  be dif f er ent f or the same count . 
 
9 .5
 
AT I P roc e dure
 
Whilet heAutom aticATIalgor it hmisinprogr ess 
t his condit ion will be indicated in t he st r eam ing 
dat a and pr oxim ity and touch event s cannot  be 
det ected.  The device will only brief ly r emain in 
t his condit ion and it will be ent er ed only when 
r elatively lar
ge shift s in t he count has been 
det ected.
 
The aut om atic ATI f unct ion aim s t o m aintain a 
const antcount,r egar dlessoft hecapacit anceof  
t hesenseelectr ode( wit hint hem axim umr ange 
oft he device) . 
 
The eff ect s of aut o
-
ATI on t he application ar e 
t hef ollo
wing:
 
>
 
Aut omat ic adj ust ment  of  t he devic e  
conf igurat io n and processing paramet er s  
f or a wide range of  P CB and app licat io n  
designst omaint ai naopt imalconf igurat i o n  
f or proximity and t ouch det ect ion.
 
>
 
Aut omat ic t uning of  t he sense elect rod e at  
st art
-
up t o o
pt imise t he sensit ivit y of  t he 
applic at ion.
 
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>
 
Aut omat ic re
-
t uning when t he devic e  
det ect s changes in t he sensing elect rod es  
capacit ance t o acco mmodat e a large  
rangeof chang esint heenvironme nt of t he 
applic at ion t h at  inf lue nces t he sensi n g  
elect rode.
 
>
 
Re
-
tu
nin g on ly occur s during devic e  
operat io nwhenarelat iv elylargesensit iv it y  
reduct ion is det ect ed.  T his is t o ensure  
smoot h operat ion of  the device durin g  
operat io n.
 
>
 
Re
-
t unin g may t emporarily inf lue nces t he  
normal f unct ioni ng of  the device,  but  in  
most  in
st ances t he ef fect  will be hardly  
not iceab le.
 
>
 
Short lyaf t ert hecompletionof t here
-
t unin g  
process t he sens it ivit y of  a Proximity  
det ect ionmaybereduc edslight lyf oraf ew 
seconds as int erna l f ilt e rs st abilises.
 
Autom at ic ATI can be im plement ed so 
eff ec
t ively duet o:
 
>
 
Excellent  syst em signal t o noise rat i o  
(SNR).
 
>
 
Eff ect ive digit al sign al processing t o  
remove AC and ot her n oise.
 
>
 
T he very st able core of t he devices.
 
>
 
T he built
-
in ca pab ilit y t o accommodat e a  
large ran ge of  sensing e lect rod e  
capacit ances.  
 
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®
 
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®
 
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10
 
DYCAL Specifi c set tings
 
1 0 .1
 
Rel e as e T hres hold
 
TheIQ S228AS/ Bhast heopt iont oincreaset hereleaset hresholdwheninTM. Thishelpst hatsm all 
variat ions caused by m oving a f inger/ hand on a touch pad will not cause the I C t o exit TM
, m aking 
t he solution m or er obust . The opt ions available are shown below:
 
Conf i gurat i on:  
Bank0
 
bi t 6
 
Bi t
 
Select i on
 
0 
 
75% of  Ent r y Delt a
 
1 
 
87. 5% of Entr y Delt a
 
Af t er ent er ing TM,  as soon as t he LTA f ollows t o wit hin 16 counts,  a Ent r y Delt a value is calculated 
as:
 
>
 
Entr y Delt a=LTA
entry
 
-
 
LTA
cur re nt
 
This calculated Entr y Delt a value is used f or t he Release Threshold as shown above.
 
I f  upon entr y,  t he LTA value is 
alr eady wit hin 16 Counts,  t he Ent r y Delt a is t aken as t he calculated 
t oucht hreshold value.
 
1 0 .2
 
Input E na ble
 
TheIQ S228AS/ Bcanbeconf igur edt ohavet heCTRLpinf unct ionasanout putonaPr oxim it yevent.
 
Choosing t he CTRL pin as out put r emoves t he Filt er Ha
lt  and Halt Char ge opt ions of t he pin as an 
input.
 
Using a t ouch event  t o act ivate O UT will m ake t he syst em  less sensit ive which is needed in some 
applications. The LTA will st ill halt  wit h t he det ect ion of a pr oxim it y but  will not  have an 
inf luence on 
t heO UT pin. The LTA will st ill r e
-
calibrat e once at ouch condit ion is det ected.
 
Conf i gurat i on:  
Bank0
 
bi t 7
 
Bi t
 
Select i on
 
0 
 
O utput
 
1 
 
I nput
 
IQ  Sw it ch
®
 
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11
 
Electric al Sp ecific a tions
 
1 1 .1
 
Abs olute Ma x imum 
Spe c ifica tions
 
Exceeding t hesemaximum specif i cat i ons may cause damaget ot hedevice
.
 
O per at ing t em per atur e
:
 
I Q S228AS
 
-
20°Ct o 85°C
 
I Q S228B
 
-
4
0°Ct o 85°C
 
Supply Volt age ( V
DDHI
 
V
SS
)
 
3.6V
 
M axim um  pinvolt age(OUT, CTRL)
 
V
DDHI
 
+ 0.
3
V
 
Pin 
volt age ( Cx)
 
1.7V
 
M inim um pin volt age ( VDDHI ,  VREG, O UT, CTRL, Cx)
 
V
SS
 
-
 
0.
3
V
 
M inim um power
-
on slope
 
100V/ s
 
ESD prot ect ion ( VDDHI, VREG ,  V
SS
, O UT, CTRL, Cx)
 
8kV
 
1 1 .2
 
Ge ne ral Cha rac teri s tic s
 
I Q S228AS/ B devices ar e r at edf or supply volt ages bet ween 1.8V and 3
. 6V.  
 
Ta b l e 
11
.
1
: 
IQS2 28 AS/B Gene ra l  Ope ra ti ng  Co nd i tio n s
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
T YP
 
MAX
 
UNIT
 
Su p p ly  vo l tag e
 
V
DDHI
 
1.
8
 
3 .3
 
3 .6
 
V
 
In te rn al  reg u l ato r ou tp ut
 
DDHI 
 
V
REG
 
1 .6 4
 
1 .7
 
1.
75
 
V
 
Bo o s t Po wer o pe ra ti n g c u rren t 
 
DDHI 
 
I
IQ S2 2 8 AS/B_ BP
 
120
 
129
 
135
 
˛
A
 
Norm a l  Po wer op e ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ NP
 
4 .9
 
6 .4 5
 
8 .1
 
˛
A
 
L o w p o wer1  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B
 
L P1
 
2 .9 5
 
3 .8
 
4 .8 5
 
˛
A
 
L o w 
p o wer2  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ L P2
 
1 .8 8
 
<2 .5
1
 
3 .2
 
˛
A
 
C
x
 
p i n c a p ac i ta n ce
 
DDHI 
 
C
C
xL o a d
 
120
 
pF
 
Char ge Transf er  Tim ings f or  low powerm ode isf ound in 
Section 
7.12
.
 
Ta b l e 
11
.
2
: 
Sta rt
-
u p a n d s h u t
-
d o wn sl o pe  Ch a rac te ri s ti cs
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
MAX
 
UNIT
 
POR
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
POR
 
0 .3
2
 
1.
7
 
V
 
VDDHI 
re s e tl e ve l
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VDDHI
 
N/A
 
1 .7
 
V
 
VREG
 
re s e t le v el
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VREG
 
N/A
 
1 .5 8
3
 
V
 
1
 
Al l l ow p ower c urr en t v al ue s  aris e fr om 
c h arac teriz a tio n do ne fro m (
-
) 35°C  to ( + ) 8 5°C a t 3. 3V.
 
2
 
F or a p ower c y c le,e ns ure lower ing  VDD HI b el ow th e min im um v a lue  bef ore r a m pin g VD DHI pas t th e 
max im um PO R v a lue
 
3
 
F igur e  
2
.
4
 
Cap ac itors  C 1 & C3 s h ou ld be c hos e n to  c omp ly  wit h th is  s pec if ic at io n
 
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®
 
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®
 
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Marc h 2022
 
1 1 .3
 
Output Cha ra c teri s tics
1
 
Ta b l e 
11
.
3
: 
TOUT Cha ra c te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S INK  
 
O utput  Low 
volt age
 
100mV
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
100mV
 
V
DDHI
 
= 3.3V
 
10
 
100mV
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
4
: 
POUT Ch a rac te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.1V
 
V
DDHI
 
= 3.3V
 
10
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
5
: 
Comb i ne d  Cha ra cte ri s ti cs
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
17
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.V
 
V
DDHI
 
= 3.3V
 
20
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
1
 
I/ O sink capabilit ies only in Act ive Low conf igur ation. I /O sour ce capabilit ies only in Act ive High 
conf igur ation.
 
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®
 
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®
 
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1 1 .4
 
P a c ka ging I nforma tion
 
1 1 .4.1
 
T S OT2 3
-
6 
 
Fi g u re 
11
.
1
: 
TSOT2 3
-
6  Pac k ag i n g
1
 
Ta b l e 
11
.
6
: 
TSOT2 3
-
6  Di me nsi o n s
 
Dimen sion
 
Min ( mm )
 
Max (m m)
 
A
 
2 .6 0
 
3 .0 0
 
B
 
1 .5 0
 
1 .7 0
 
C
 
2 .8 0
 
3 .0 0
 
D
 
0 .3 0
 
0 .5 0
 
E
 
0 .9 5  Bas ic
 
F
 
0 .8 4
 
1 .0 0
 
G
 
0 .0 0
 
0 .1 0
 
H
 
0 .3 0
 
0 .5 0
 
I
 
0°
 
8°
 
J
 
0 .0 3
 
0 .2 0
 
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®
 
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1 1 .4.2
 
WLCS P
-
8
 
Fi g u re 
11
.
2
 
IQS2 2 8 B W L CSP
-
8  Di me n si o ns  (i n mm)
 
Top view
 
Bott om  view
 
Side
 
view
 
P i n 1
 
m
arki ng
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.3
 
DFN
-
6
 
DFN
-
6 Packaging
 
DFN
-
6 Dim ensions 
 
Dimen sion
 
Min
 
Max
 
A
 
3 .0 0m m
 
3 .0 0m m
 
B
 
2 .5 0m m
 
2 .5 0m m
 
C
 
0 .3 0m m
 
0 .3 0m m
 
D
 
0 .3 5m m
 
0 .3 5m m
 
E
 
1 .3 0m m
 
1 .3 0m m
 
F
 
2 .2 0m m
 
2 .2 0m m
 
G
 
0 .0 5m m
 
0 .0 5m m
 
H
 
0 .7 5m m
 
0 .7 5m m
 
I
 
0 .8 0m m
 
0 .8 0m m
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.4
 
MS L Le v e l
 
M oist ure Sensi ti vit y Level
 
(M SL) r elates t o t he packaging and handling precautions f or some 
semiconductor s. TheM SLisanelectr onicst andardf ort het im eper iodinwhicham oist ur esensit ive 
device can be exposed to ambient r oom condit ions ( appr oxim at ely 30°C/85%RH see J
-
STD033C 
f
or m or e inf o)  bef ore r ef low occur.
 
Pac kag e
 
L evel( d u r atio n )
 
TSOT2 3
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
WL CSP
-
8
 
Non
-
e n ca ps u l ate d d e vi ce  

not m o is tu re  se n si tiv e
 
Ref l o w p rofi le  p ea k  
te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
DFN
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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12
 
Datash eet an d Part
-
number I nform ation
 
1 2 .1
 
Orde ring Informa tion
 
O r der swillbesubj ectt oaMO Q(M inim umO r der Q uantity) of af ullr eel. Contactt heoff icialdist r ibut or  

www. azot eq. co
m
. 
 
For  large order s, Azoteqcan provide pre
-
conf igured devices. 
 
ThePart
-
num ber canbegener atedbyusingUSBPr og. exeor t heI nt eract ivePart Num ber gener ator 
on t he websit e. 
 
I C NAM E
 
I Q S228AS
 
=
 
I Q S228 Self  Capacit ive
 
I Q S228B
 
=
 
I Q S228 Self  
Capacit ive
 
CO NFIG URATIO N
 
zzz zzz zz
 
=
 
I C Conf igur at ion( hexadecim al)
 
PACKAG E TYPE
 
TS
 
=
 
TSO T23
-
6 package
 
C
S
 
=
 
WLCSP
-
8 package
 
DN
 
=
 
DFN
-
6 package
 
BULK PACKAG I NG
 
R
 
=
 
Reel 
 
TSO T23
-
6 andWLCSP
-
8: 
3000pcs/ r eel
 
DFN
-
6: 6000pcs/r eel
 
=
 
M OQ = 1r eel 
( or der s shipped asf ull r eels)
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .2
 
Dev ice  Ma rk ing 

T op
 
1 2 .2.1
 
T S OT2 3
-
6 P a ck a ge Ma rk ings
 
There ar e 2 m ar king versions in circulation f or I QS228AS
 
and IQ S228B
:
 
Fi g u re 
12
.
1
:
Fi rs t Ma rki n g  Va ria n t o fIQS2 2 8 AS
 
Fi g u re 
12
.
2
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 AS
 
Fi g u re 
12
.
3
: 
Fi rs t Ma rk i n g Va ria n t o fIQS2 2 8
B
 
Fi g u re 
12
.
4
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 B
 
I C NAM E
 
228A
 
=
 
I Q S228AS Self Capacit ive
 
22
-
A
 
=
 
I Q S228AS Self Capacit ive
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 
t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .2.2
 
WLCS P
-
8  P a ck a ge Ma rk ings
 
Fi g u re 
12
.
5
 
To p Ma rk in g  o f I QS2 2 8 B W L CSP Pa ck a g e
 
I C NAM E
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 

ZZ
 
I C VERSI O N
 
V
 
Product Code
 
PPP
 
1 2 .2.3
 
DFN
-
6  P a c ka ge  
Ma rk ings
 
Fi g u re 
12
.
6
 
IQS2 2 8 B
 
DFN
-
6  Pa c ka g e  To p  Ma rk i n g
 
I C NAM E
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .3
 
T a pe  
a nd Ree l 
S pe c ific a tion
 
Fi g u re 
12
.
7
: TSOT2 3
-
6  T ap e Sp e c ifi ca ti on .
 
Ta b l e 
12
.
1
 
Ta pe  a nd  Re el  Di me n s io n s
 
Dev ic e
 
P ack age
 
Ty pe
 
P ack age
 
D ra wi ng
 
P ins
 
QTY  
per 
reel
 
Reel
 
Di a m ete r
 
(mm )
 
Reel
 
Wi dth
 
W1 (mm )
 
A0
 
(mm )
 
B0
 
(mm )
 
K0
 
(mm )
 
P1
 
(mm )
 
W
 
(mm )
 
P in1
 
Quadrant
 
I QS2
2
8
AS
z zzz zzz zTS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz TS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3
000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz CS R
 
WLCS P 8
 
WLCS P
-
8
 
8
 
3000
 
17 9
 
8. 4
 
1
 
1 . 5 5
 
0. 48
 
4
 
8
 
Q3
 
I QS228Bzz zzz zzz DNR
 
DFN6
 
DFN
-
6
 
6
 
6000
 
330
 
12. 4
 
2. 8
 
3. 3
 
1. 2
 
4
 
12
 
Q1
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Appendi x A.
 
Memory  Map
 
Device Inform ation
 
[ 00H]  PRO D_NR
 
The pr oduct  num berf or the IQ S228A is 39 ( decimal) .
 
[ 01H]  SW_NR
 
Thesof t war eversionnum beroft hedeviceRO Mcanber eadint hisbyte.Thelatestsof t wareversion 
is 29 ( decim al) .
 
[ 10H]  SYSFLA G S0 
 
Bit  7
-
6:  
 
SYSTEM _USE
 
Bit  5: 
 
Logic: 
LogicO utput I ndication
 
0 = Act ive Low
 
1 = Act ive High
 
Bit  4: 
 
Halt :
 
I ndicat es Filt er  Halt st at us
 
0 = LTA not  being Halt ed
 
1 = LTA Halt ed
 
Bit  3: 
 
LP:
 
Low PowerM ode
 
0 = Samplet im e BP
 
1 = Samplet im e LP
 
Bit  2: 
 
ATI:
 
St atus of  aut omat ed ATI r out ine
 
00H
 
Pro d u ct Nu mb e r ( P RO D_ NR)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
39 ( Decim al)
 
R
 
Note
 
01H
 
So f t w are Num b er ( S W_ N R)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
29 ( Decim al)
 
R
 
Note
 
10H
 
Syst em  Flag s (
Sy s_F lag s )
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
~
 
Logic
 
Halt
 
LP
 
ATI
 
ND
 
Zoom
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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0 = ATI is not busy
 
1 = ATI in progr ess
 
Bit  1: 
 
ND:
 
This bit indicatest he pr esence of noise int erf erence.
 
0 = I C has not  det ectedthe presence of  noise
 
1 = I C has det ected t hepresence of  noise
 
Bit  0: 
 
ZOOM : 
Zoom  will indicate f ull
-
speed char ging once an undebounced proxim it y is 
det ected. I n BP m ode, t his
 
will not  changet he charging fr equency.
 
0 = I C not zoom ed in
 
1 = I C det ect ed undebounced pr oxim it y andI C ischar ging at f ull
-
speed ( BP)
 
[ 31H]  St atus
 
Bit  7: 
 
Dycal:  
Dycal Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  6:2:  
 
SYSTEM _USE
 
Bit  1: 
 
Touch: 
Touch Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  0: 
 
Prox:
 
Pr oxim it y Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
31H
 
St atu s
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
DYCAL
 
Touch
 
Pr oxim it y
 
R
 
Note
 
42H
 
Co u n t s_Hig h  ( CS _H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts High Byt e
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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43H
 
Co u n t s_L o w  ( CS_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts Low Byt e
 
R
 
Note
 
83H
 
L T A_High  ( L T A_H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age High Byt e
 
R
 
Note
 
84H
 
L T A_Lo w  ( L T A_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age Low Byt e
 
R
 
Note
 
C4H
 
F u se Bank  0( F B_ 0)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
1
 
f or m ore details
 
R
 
Note
 
C5H
 
F u se Bank  1( F B_ 1)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
2
 
f or m ore details
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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AS /B  Dat as heet  
 
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Marc h 2022
 
[ C8H]  
Defaul t CommsPoint er
 
Thevaluest or edint hisregist erwillbeloadedintot heCom msPointer at t hest ar tofacom m unicat ion 
window.  For  example, if  t he design only r equir es t he Pr oxim it y St at us inf or m at ion each cycle,  t hen 
t he 
DefaultCom m sPointer
 
. Thiswouldm eant hatatt hest ar tofeach 
comm unicat ion window, t he comm s pointer would alr eady be set t o t he Pr oxim it y St at us r egist er, 
sim ply allowing a READ t or etr ieve t he dat a, wit hout t he need of set t ing up t he address.
 
C6H
 
F u se Bank  2( F B_ 2)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See
 
Table 
3
.
4
 
f or m ore details
 
R
 
Note
 
C7H
 
F u se Bank  3( F B_ 3)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
5
 
f or m ore details
 
R
 
Note
 
C8H
 
DEF AUL T _CO MM S_ PO IN T ER
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
( Beginning of Device Specif ic Data)
 
R/ W
 
Default
 
10H
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Marc h 2022
 
Appen dix B.
 
Errata
 
Filte r 
H
a lt 
T
ime s
 
W

bit isset, t hehalt t im esasspecif iedinSection 
3
 
willbescaled16xlonger,  
due t o added dead t im ewhen t heI C 
cor e is t ur ned off t or educe power  consum ption:
 
Us er Se lec tab le Conf ig urati on O pt ions : Ba nk  1 

F ul l A T I (
0x C5H
)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 320s ec onds
 
01 = 640s ec onds
 
10 = Nev er
 
11 = 48s ec onds
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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Appendi x C.
 
Contact I nform atio n
 
V
isit  
www. azot eq. com
 
f or a list of 
dist r ibut ors and worldwide r epr esent at ion.
 
USA
 
A sia
 
Sout hA f ri ca
 
Physical 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
1 Bergsig Avenue
 
Paar l
 
7646
 
Sout h Afr ica
 
Post al 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
PO  Box 3534
 
Paar l
 
7620
 
Sout h Afr ica
 
T el
 
+1 512 538 1995
 
+86 755 8303 5294
 
ext 808
 
+27 21 863 0033
 
Emai l
 
info@azoteq.com
 
info@azoteq.com
 
info@azoteq.com
 
P
ate nts  
as  l is ted  on  
www. a z oteq.c om /pat ents
-
tr ad ema r k s /
 
may  
r elate  to t he dev ic e or  us ag e of  the  dev ic e
.
 
Az oteq
®
,Cr y s tal Dr iv er

,IQ Sw itc h
®
,Pr ox S ens
e
®
,Pr ox F us ion
®

log o ar e tr ade mar k s  of Az o teq.
 
T h e  in fo r m atio n  in t h is Data sh e e t is b e lie ve d  to  b e a ccu r a te  a t t h e tim e o f p ub lica tio n . Azo te q  u se s r e a son a b lee ff o rt to m a
inta in th e in form a tio n  up
-
to
-
d a te a n d a ccu ra te ,b u t do e s 
n o twarr a n tth e a ccu r a cy,co m p le te n e sso rr e lia b ilityo fthe inf or m a tio n c

o r  warr a n tie s, e xpr e ss or  imp lie d , of a n y kind , inclu d ing  r e pr e se n tatio n s ab o u t th e  su ita b ility o f the se  pr o d u cts o r inf or m a t
ion  for  a n y p ur po s
e .  Azo teq  d iscla im s a ll war r a ntie s a nd 
co n d ition s with  r e g ar d  to  th e se  pr o d u cts a nd  inf o r m a tio n , inclu d ing  b u t no t lim ite d  to  a ll im plie d  war r a n tie s a nd  co n d ition s 
o f m er ch a n ta b ility,  fitn e ss fo r  a  p a r ticu lar  p u r p o se , title 
a n d  n o n
-
infr ing em e n t o f a n y th i
r d  pa r ty int e llectu a l p r o p er ty r igh ts.  Azo te q  a ssum e s n o  lia b ility fo r  a n y d a m a g e s o r  injur y a r isin g  fr om  a n y u se  o f th e  inf o
r m a tion  o r  th e  p r od u ct o r 
ca u se d  b y, with o u t lim ita tio n , fa ilu r e o f pe r form a n ce , e r r or , om issio n , inte r ru p tio n , d e fe ct, de lay in o p
e r a tio n o r tr a n sm issio n , e ve n  if Azo te q  h a s b e e n  a d vised  o f th e p o ssibility of 
su ch  d a m a ge s. T h e  ap p lica tio n s m en tio n e d  he r e in a r e  u se d  so lely fo r  the  p u r po se  o f illustr a tio n  a n d  Azo teq  m a ke s n o  war r a n ty 
o r  r e pre se n ta tio n  tha t su ch  a p p lica tio n s will b e 
su i
ta b le with o u t fur th er  m o d ificatio n , n or  r e com m e n d s th e  u se  o f its pr o d u ctsfo r  a pp lica tio n t h a t m a y pr e se n t a r isk to  h um a n  l
ife  d ue  t o m a lfu n ctio n  or  o th er wise . Azo te q  pr o d u cts 
a r e  n o t au th o r ized  fo r  u se  a s cr itical com p o ne n ts in life  su p p or t d e vices or  s
yste m s. No  lice n se s to  p a te n ts a re  g r a nte d , im p licitly, e xp re ss o r  im p lie d , b y e sto p pe l o r  o the r wise, 
u n d e r a n y inte lle ctu a l p r o pe r ty r igh ts.  In th e e ve n t tha t a n y o f th e  a b o vem e n tio n ed  lim ita tio n s o r e xclusio n s d o e s n o t a p p ly
 
to ta l lia b ility fo r  a ll losse s, 
d a m a g e s an d  ca u se s o f a ction  ( in co n tr a ct,  to r t ( inclu d ing  witho u t lim ita tio n , ne g lig e n ce)  or  o th e r wise)  will n o t e xce e d  th e  
am o u n t a lre ad y p a id b y th e  cu sto me r  fo r  th e  p r od u cts.  
Azo te q  r e se r ve s the  r igh t to  a lter  its p r o d u
cts, to  m a ke  co r r e ctio n s, d e let ion s, m o d ificat ion s, e n h a n ce m en ts,  im p ro ve m en ts a n d  o th er  ch an g e s to  th e  co n ten t a n d  inf o rm a ti
o n, its 
p r o d u cts, p ro g r am s an d  ser vices a t an y time  o r  to m o ve  or  d iscon tin u e a n y co n te nts,  pr o d ucts,  p r og r am s or  ser vices with ou t 
pr ior n o tificatio n . Fo r  t h e  m o st u p
-
to
-
d ate  info r m ation 
a n d  b ind ing T er m s a nd  Co n d ition sp lea se r e fer  t o
 
www.a zo teq .co m
.
 
i nfo@azoteq. com
 
",Name,IQS2
" 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
I QS22
8
AS /B  Dat as heet  
 
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of  
41
 
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4
1
 
Marc h 2022
 
IQ S228A
S
/B D AT ASHEET
 
Single channel capacit ive pr oxim it y 
 
and t ouch cont r oller
 
The Pr oxSense
®
 
IQ S228A S/ B
 
is a single channel self
-
capacit ive sensor wit h Dynam ic Calibrat ion 

Feature s
 
>
 
1 Self  capacit ive channel
 
>
 
>
 
Pr oxim it y and Touch output s
 
>
 
Autom at ic Tuning
 
>
 
I nter nal Refer ence Capacit or
 
>
 
M inim um exter nal com ponent s 
 
>
 
1
-
Wire dat a str eam ing 
 
>
 
I
2
C Debug opt ion
 
>
 
User selectable opt ions (O TP):
 
>
 
Ext  sync cont r olor Ext f ilt er contr ol
 
>
 
I /O  Sink or  Sour ce selection
 
>
 
Tim e
-
out f or st uck key
 
>
 
Pr oxim it y and Touc
h sensit ivit y selections
 
>
 
Low Power
 
m odes
 
>
 
Low powerm ode 2. 5

A 
 
>
 
Supply volt age: 1.8V t o 3. 6V 
 
Applicati ons
 
>
 
Pr oxim it y sensors
 
>
 
SAR det ectionf or  Tablets
 
>
 
On
-
ear  det ection f or m obile phones
 
>
 
3D glasses
 
>
 
Personal M edia Player s
 
>
 
Whit e goods and appliances
 
>
 
HumanI nter f ace Devices
 
>
 
Pr oxim it y activat ed backlight ing
 
Ava il a ble  O ptions
 
T
A
 
T SO T 23
-
6
 
WL CS P
-
8
 
DF N
-
6
 
-
20
°
C t o 85
°
C
 
I Q S228AS
 
-
 
-
 
-
40
°
C t o 85
°
C
 
I Q S228B
 
I Q S228B
 
I Q S228B
 
R oH S2
 
Com pl i ant
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
I QS22
8
AS /B  Dat as heet  
 
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Contents
 
I QS 22 8AS /B DA TAS HE E T
 
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.....................
 
1
 
1 OVE RV IE W
 
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5
 
1.1
 
D
E V I CE
 
................................
................................
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......................
 
5
 
1.2
 
O
P E RATI ON
 
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................
 
5
 
1.3
 
A
P P LI CA BI LITY
 
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............
 
5
 
2 PACKA GIN G A ND P IN
-
OU T
 
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...............
 
6
 
2.1
 
IQ S2 28 AS/ B
 
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................................
................................
.............
 
6
 
2.1.1  P in
-
ou t TSOT 2 3
-
6
 
................................
................................
................................
.............................
 
6
 
2.1.2  P in
-
ou
t W LC SP
-
8
 
................................
................................
................................
..............................
 
7
 
2.1.3  P in
-
ou t DFN
-
6
 
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................................
....
 
8
 
2.2
 
S
CHE MA TI C
 
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................
 
9
 
2.2.1  TSO T 23
-
6
 
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9
 
2.2.2  W LCS P
-
8
 
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.........
10
 
2.2.3  DF N
-
6
 
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11
 
3 U S E R CON FI GURA BLE  OPT IONS
 
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.....
 
12
 
3.1
 
C
ONFI GURI NG 
D
EV I CE S
 
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............................
 
12
 
3.1.1  IQ S2 28 AS/ B Us er 
Se lec tab le O pti ons
 
................................
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............................
12
 
4 ME A S URIN G CAPA CI TAN CE US IN G T HE  
C HA RGE T RANS FER
 
ME TH O D
 
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..........
 
15
 
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16
 
6 OPE RA TIN G PR INC IPLE
 
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...................
 
17
 
7 CO NFI GURA BLE  S E TTIN GS
 
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..............
 
17
 
7.1
 
CT RL:
 
E
XTE RNA L 
C
ONTROL
 
................................
................................
................................
.....................
 
17
 
7.1.1  Char g e H alt
 
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................................
................................
................................
......
17
 
7.1.2  Ha lt LT A Fi lter
 
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................................
..
17
 
7.1.3  Pu ls e 
o n CTR L:
 
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...............................
17
 
7.2
 
LO G IC
 
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....................
 
18
 
7.3
 
RF
 
N
OI S E ON 
IQ S228AS /B
 
................................
................................
................................
......................
 
18
 
7.3.1  ND: RF  Nois e Det ec ti on
 
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................................
................................
..................
18
 
7.3.2
 
IQ S2 28 AS/ B RF  Nois e Im mun ity
................................
................................
................................
.....
18
 
7.4
 
P
ROXI MI TY  
T
HRE S HOLD
 
................................
................................
................................
............................
 
19
 
7.5
 
T
OUCH 
T
HRE S HOLD
 
................................
................................
................................
................................
.
 
19
 
7.6
 
M
ULTI P LI E RS
 
................................
................................
................................
................................
............
 
19
 
7.7
 
C
HA RGE 
T
RA NS FE R
 
................................
................................
................................
................................
.
 
19
 
7.8
 
T
A RGET 
C
OUNTS
 
................................
................................
................................
................................
.....
 
19
 
7.9
 
E
NA B LE  
P
A RTIA L 
AT I
................................
................................
................................
................................
 
19
 
7.10
 
DY CA L
 
T URBO
 
................................
................................
................................
................................
....
 
20
 
7.11
 
F
I LTE R 
H
A LT
 
................................
................................
................................
................................
..........
 
20
 
7.12
 
L
OW 
P
OWE R 
M
ODE S
 
................................
................................
................................
..............................
 
20
 
7.13
 
Z
OOM
 
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................................
................................
....................
 
20
 
8 S T RE A MIN G M ODE
 
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.........................
 
21
 
8.1
 
E
V E NT 
M
ODE
 
................................
................................
................................
................................
...........
 
22
 
8.2
 
I
2
C
 
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................................
..........................
 
22
 
9 A U TO TU NING IM PLE ME NTAT I
O N (A TI)
 
................................
................................
................................
.........................
 
23
 
9.1
 
F
ULL 
AT I
 
................................
................................
................................
................................
.................
 
23
 
9.2
 
AT I
 
T
A RGET
 
................................
................................
................................
................................
.............
 
23
 
9.3
 
AT I
BAS E
:
 
S
I GNI FI CA NCE OF 
AT I
 
B
A SE
 
................................
................................
................................
........
 
23
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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AS /B  Dat as heet  
 
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9.4
 
S
E NS I TIV I TY  
D
UE  TO 
AT I
 
................................
................................
................................
..........................
 
23
 
9.5
 
AT I
 
P
ROCE DURE
 
................................
................................
................................
................................
......
 
23
 
1 0 DY CA L S PE C IFI C S E TTI NGS
 
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................................
................................
................................
............
 
25
 
10.1
 
R
E LE A SE  
T
HRES HOLD
 
................................
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................................
............................
 
25
 
10.2
 
I
NP UT
 
E
NA B LE
 
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................................
................................
........
 
25
 
1 1 E LE CTR ICA L S PE CIF I CA TI ONS
 
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26
 
11.1
 
A
B S OLUTE  
M
A XIMUM 
S
PE CI FI CA TI ONS
 
................................
................................
................................
....
 
26
 
11.2
 
G
E NE RA L 
C
HA RA CTE RI STI CS
 
................................
................................
................................
..................
 
26
 
11.3
 
O
UTP UT 
C
HA RA CTE RIS TI CS
 
................................
................................
................................
....................
 
27
 
11.4
 
P
A CK A GI NG 
I
NFORMA TION
 
................................
................................
................................
......................
 
28
 
11.4. 1 TSO T 2 3
-
6
 
................................
................................
................................
................................
......
28
 
11.4. 2 WLC SP
-
8
 
................................
................................
................................
................................
.......
29
 
11.4. 3 DFN
-
6
 
................................
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................................
............
30
 
11.4. 4 M SL Lev e l
 
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................................
......
31
 
1 2 DATAS HE E T A ND PART
-
NU M BE R INF OR MATI ON
 
................................
................................
................................
.........
 
32
 
12.1
 
O
RDE RI NG 
I
NFORMATI ON
 
................................
................................
................................
........................
 
32
 
12.2
 
D
EV
I CE  
M
A RK I NG 

T
OP
 
................................
................................
................................
.........................
 
33
 
12.2. 1 TSO T 2 3
-
6 Pac k age  Mar k ings
 
................................
................................
................................
.......
33
 
12.2. 2 WLC SP
-
8 Pac k ag e Mar k ings
 
................................
................................
................................
........
34
 
12
.2. 3 DFN
-
6 Pac k ag e M ark ings
 
................................
................................
................................
.............
34
 
12.3
 
T
A P E A ND 
R
EE L 
S
PE CI FICA TI ON
 
................................
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35
 
A P PE ND IX  A . ME M OR Y MAP
 
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.............
 
36
 
A P PE ND IX  B . E RRA TA
 
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........................
 
40
 
F
I LTE R 
H
A LT 
T
I
MES
 
................................
................................
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................................
........
 
40
 
A P PE ND IX  C . C ONTA CT I NF ORMA TI ON
 
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41
 
IQ  Sw it ch
®
 
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®
 
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List of Ab brevi ation s
 
ATI
 
Autom at ic TuningI m plem ent at ion
 
BP
 
Boost  Power M ode
 
CS
 
Counts( Number of  Charge Transf ers)
 
C
s
 
I nter nal Refer ence 
Capacit or
 
DYCAL
TM
 
Dynam ic Calibrat ion
 
EM I
 
Electr omagnet icI nter f erence
 
ESD
 
Electr o
-
St atic Dischar ge
 
FTB/ EFT
 
( Electr ical) Fast Transient  Burst s
 
G ND
 
G r ound
 
HC
 
Halt  Char ge
 
LP
 
Low PowerM ode
 
LTA
 
Long Term  Aver age
 
ND
 
Noise Det ect
 
THR
 
Thr eshold
 
TM
 
Touch M ode
 
IQ  Sw it ch
®
 
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®
 
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1
 
Overvi ew
 
1 .1
 
Dev ice  
 
The 
I Q S228AS/ B 
is a single channel 
capacit ive proxim it y and t ouch device which 
employs an inter nal volt age r egulator and 
r efer ence capacit or ( C
s
).
 
The IQ S228AS/ B device has a dedicat ed 
pin(s)
 
f or  t he connect ion of a sense 
electr ode(s)  ( Cx)  and out put  pin(s)  f or 
proxim it y and t ouch event s on O UT. The 
polarityoft heoutput pinscanbeconf igur ed. A 
1
-
wir e open drain dat a str eam ing pr otocol O R 
I
2
C inter f ace is im plement ed f or  debugging 
pur poses.
 
Special device conf igur at ion can be done by 
sett ingonet im epr ogr amm able(O TP)opt ions. 
 
The device aut om atically t r acks slow varying 
envir onm ent al changes via var ious signal 
processing algor it hm s and has an Autom atic 
Tuning Im plement ation ( ATI ) algor it h
m t o 
calibrat et he device t o t he sense elect r ode.  
 
f orm of hyst er esis t hat can t r ack slow var ying 
envir onm ent al change even while t he sensor 
is in a t ouch st at e. This is ideal f or port able 
applications.
 
The 
char ge 
t r ansf er
 
method of  capacit ive 
sensingisemployedontheIQ S228AS/ B.( The 
char ge t r ansf er pr inciple is t hor oughly 
descr ibed in t he applicat ion not e:  

-
 
1 .2
 
Ope ra tion
 
The device has been designed t o be used in 
applications wher e proxim it y is r equir ed and 
t ouch condit ions can prevail f or an extended 
per iod of t im e which m ay r esult  in 
uncompensat ed dr if t in convent ional 
capacit ive sensor s. 
 
Alowt hresholdisusedtodet e
ct t hepr oxim it y 
of an obj ect,  wit h a higher t hreshold f or  t ouch 
det ection. 
 
Dynam ic Calibrat ion is perf orm ed when a 
TOUCH condit ion is detected f or  longer  t han 
t
DY CA L
. Thehyst er esisalgor it hmwillnowcheck 
f ort her eleasecondit ionoft het ouch,whiles
t ill 
t r acking envir onm ent al changes
 
1 .3
 
Applic a bili ty
 
All
 
specif ications, except wher e specif ically 
m ent ioned ot her wise, provided by t his 
dat asheet
 
are applicable t o t he f ollowing 
r anges:
 
>
 
Tem per at ure:
 
I Q S228AS: 
 
-
20
°
Ct o+85
°
C
 
I Q S228B:  
 
-
40°Ct o+85°C
 
>
 
Supply volt age( V
DDHI
) :  1.8V t o 3. 6V
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2
 
Packag ing
 
an d Pin
-
Out
 
TheIQ S228AS/ BisavailableinaTSO T23
-
6package.
 
t heIQ S228BisavailableinTSO T23
-
6
, DFN
-
6
 
or WLCSP
-
8
 
package
 
2 .1
 
IQ S 2 28 AS/ B
 
2 .1 .1
 
P in
-
out
 
T S OT2 3
-
6
 
Fi g u re 
2
.
1
:
Pi n
-
ou t o f I QS2 2 8 AS/B i n  t he  T SOT23
-
6  pa ck a g e.
 
Ta b l e 
2
.
1
: 
Pi n
-
ou t de sc ri p ti o n
 
IQ S22 8AS /B in T SO T 23
-
6
 
Pi n
 
Nam e
 
Ty p e
 
Fu n c ti o n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o rp ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  ca p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .1 .2
 
P in
-
out WLCS P
-
8
 
Ta b l e 
2
.
2
 
8 
-
pi n  W L CSP Pi n
-
ou t Desc ri pti o n
 
IQ S2
2 8B
 
8
-
p in WL C SP
 
Pin
 
Nam e
 
Ty pe
 
Fu nc tio n
 
1
 
Cx
 
Se n s e e l ec trod e
 
Con n e ct to c o nd uc tiv e  a re a  in te n d e d f o r 
s e ns o r
 
2
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
3
 
VREG
 
Reg u l a to r ou tp u t
 
Req u i res  ex te rn a l c a pa c ito r
 
4
 
VSS
 
Si g n a l GND
 
5
 
INPUT
 
Dig i tal  I n pu t
 
Fl o a ti n g i n pu t d u ri n g ru n ti m e. 
 
Rec o mm en d e d: Con ne c tto  
POUT
 
6
 
POUT 
/ ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
7
 
VDDHI
 
Su p p ly  I np u t 
 
Su p p ly  Vo lta g e I n pu t
 
8
 
PGM
 
Con fi g u ra tio n  pi n
 
Con n e cti on  f o r OTPp ro g ramm i n g. Flo a tin g  in p u t d u ri n g  
ru n tim e . 
 
Rec o mm en d e d: Con ne c tto  
OUT
 
p i n . Pro g ram mi n g c a n 
s ti ll  b e p e rfo rm ed  us i ng  t hi s  pin , p rov i de d  a d i od e  is  
u s e d. (Se e  AZD0 2 6  

Con fi g ura ti o n T o ol s  Ove rvi e w)
 
IQ S228
 
1
 
2
 
3
 
4
 
8
 
7
 
6
 
5
 
Fi g u re 
2
.
2
 
IQS2 2 8 B8
-
p i n W LCSP
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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2 .1 .3
 
P in
-
out
 
DFN
-
6 
 
Fi g u re 
2
.
3
: Pi n
-
o u t of IQS2 2
8B
 
i n  DFN
-
6 p a ck a ge .
 
Ta b l e 
2
.
3
:Pi n
-
ou t de sc ri p ti o n .
 
IQ S22 8
B
 
6
-
p in DF N
 
Pin
 
Name
 
T ype
 
F u n ctio n
 
1
 
OUT
 
Dig i tal  Out
 
Ou tp u t
 
2
 
GND
 
Gro u n d
 
GND Re fe re n c e
 
3
 
CTRL / ND
 
Dig i tal  I n pu t/ Ou tpu t
 
Con tro l i n pu t o r 
p ro xi mi ty o u tpu t / ND p in
 
4
 
VREG
 
An a l o gu e  Outp u t
 
In te rn al  Re gu l a to r Pin  (Co n nec t 1
µ
Fb y pa ss  
c a p ac i to r)
 
5
 
VDDHI
 
Su p p ly  I np u t
 
Su p p ly  Vo lta g e I n pu t
 
6
 
CX
 
An a l o gu e
 
Se n s e  El ec tro de
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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2 .2
 
S c he ma tic
 
2 .2 .1
 
T S OT2 3
-
6
 
Fi g u re 
2
.
4
: 
Typ i ca l  ap p li ca ti on re fe re nc e s ch e ma tic  o fIQS2 28 AS/B. C2 &C3 are  op ti on a l for a d d ed  RF i mmu n i ty .
 
Fi g u re 
2
.
5
: 
IQS2 2 8 AS/Bo u tp ut p i n c o nfi gu ra tio n
 
fo r I 2 C de bu g  o pe ra tio n ,o r d riv in g  L EDs  (a c tiv e h i g h o r lo w o p ti o n  
a v a il a bl e ).
 
Where a syst em  level ESD st r ike is f ound t o cause t he I C t o go int o ESD induced latch
-
up, it  is 
suggest edt hatt hesupplycurr ent t ot heI Q S228ICislim it edbym eansof ase
r iesr esist or t hat could 
lim it  t he m axim um supply curr ent t ot heI C t o <80m A.
 
Ref e r t o  AZD0 0 8 fo r 
to u ch  k ey  de si g n
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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AS /B  Dat as heet  
 
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2 .2 .2
 
WLCS P
-
8
 
Fi g u re 
2
.
6
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
WL CSP
-
8  Pac k ag e
. C2 &C3 a re  o pti on a l  fo r ad d e d RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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AS /B  Dat as heet  
 
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2 .2 .3
 
DFN
-
6
 
Fi g u re 
2
.
7
 
Ty pi ca l  ap p li c ati o n re fe re nc e s ch e ma tic  o fIQS2 2 8B
 
DFN
-
6  Pa ck a ge
. C2 &C3a re  o p ti o n al  f o ra d de d  RF 
i mmu n i ty .
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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3
 
User Co nfigur able Options
 
This section list
s t he user  conf igur able 
sett ings.
 
The
 
deviceisf ullyf unct ionalinit sdef aultst at e, 
but  som e applications may r equir e alt ernat ive 
conf igur ation sett ings.  These sett ings are 
enabled by conf igur ing O ne Tim e 
Pr ogr amm able( O TP)  user opt ions.
 
Conf igur ation c
an be done on packaged 
devices or in
-
cir cuit.  I n
-
cir cuit conf igur at ion 
m ay be lim it ed by values of ext ernal 
components chosen.
 
Popular conf igur at ions ar e available ex
-
st ock 

please check wit h t he local dist r ibutor f or 
availabil it y.  Azoteq can supply pre
-
c
onf igur ed 
devices f or  large quant it ies. 
 
3 .1
 
Configuri ng Dev ic es
 
Azoteqof f er saConf igurationTool( CT210/ 20) 
and accom panying software ( USBPr og. exe) 
t hat can be used t o progr am t he O TP user 
opt ions f or  pr otot yping purposes. M or e det ails 
r egarding t he conf igur at ion of t he device wit h 
t he USBPr og progr am  is explained by
 
application not e: 

AZD007 

USBPr og 
O verview

which can be f ound on t he Azot eq 
websit e. 
 
Alt ernat ive pr ogr am m ing solutions f or  t he 
I Q S228AS/ B also exist . For  f ur t her  enquir ies 
r egarding t his, please cont act  Azot eq at 
Pr oxSenseSuppor t @azot eq. com or t he loc
al 
dist r ibut or
 
3 .1 .1
 
IQ S 2 28 AS/ B Use r Se le c table O ptions
 
Ta b l e 
3
.
1
: 
IQS2 2 8 AS/B Ba nk 0  Us e r Se l ec ta bl e  Opti o ns  (0xC4H)
 
Bi t
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Name
 
I N_EN
 
REL
T HR
 
LOGI C
 
T
T HR 2
 
T
T HR 1
 
T
T HR 0
 
P
T HR 1
 
P
T HR 0
 
bi t 7
 
I N_E N: 
I nput E nable
 
S ect ion 
10. 2
 
0 = Out put  (P rox imi ty )
 
1 = I nput
 
bi t 6
 
RE L
T HR
: 
Releas e Thres hold
 
S ect ion 
10. 1
 
0 = 75%
 
1 = 87%
 
bi t 5
 
LOGIC:
 
Out put logics elect  (Only when S TREA MI NGmode is  
dis abled) 
 
S ect ion 
7. 2
 
0 = S of t ware Open Drain Act iv e Low
 
1 = Act iv e High
 
bi t 4
-
2
 
T
T HR
:
 
Touc h Thres holdS elect ions
 
S ect ion 
7. 5
 
000 = 72/ 256
 
001 = 4/ 256
 
010 = 8/ 256
 
011 = 24/ 256
 
100 = 48/ 256
 
101 = 96/ 256
 
110 = 128/ 256
 
111 = 160/ 256
 
bi t 1
-
0
 
P
T HR
: 
P rox imi ty Thres hold S elec t ions  
 
S ect ion
 
7. 4
 
00 = 4
 
01 = 2
 
10 = 8
 
11 = 16
 
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Ta b l e 
3
.
2
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Fu l l  ATI (0x C5H)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
Not used
 
Bank1: bi t 3
 
T URBO:
 
DY CA LTURB O
 
S ect ion 
7. 10
 
0 = Dis abled
 
1 = E nabled
 
Bank1: bi t 2
-
0
 
BAS E : 
B as e V alue 
 
S ect ion 
9. 3
 
000 = 200
 
001 = 50 
 
010 = 75
 
011 = 100
 
100 = 150
 
101 = 250 
 
110 = 300
 
111 = 500 
 
Ta b l e 
3
.
3
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  1  

Pa rti a l AT I
 
t
HA LT 1
 
t
HA LT 0
 
M ULT
S E NS E 1
 
M ULT
S E NS E 0
 
M ULT
COMP 3
 
M ULT
COMP 2
 
M ULT
COMP 1
 
M ULT
COMP 0
 
bit  7
 
bit  0
 
Bank1:7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 20s ec onds
 
01 = 40s ec onds
 
10 = Nev er
 
11 = 3s ec onds
 
Bank1: bi t 5
-
4
 
MULT
: Mult iplier f orS ens it iv ity
 
S ect ion 
7. 6
 
00
 
01
 
10
 
11
 
Bank1: bi t 3
-
0
 
MULT: Mult iplierf or Compens at ion
 
S ect ion 
7. 6
 
0000 t o 1111
 
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Ta b l e 
3
.
4
: 
Us e r Se l ec ta bl e  Con fi g u ra ti on  Opt io n s: Ba nk  2  (0x C6H)
 
STREAM
 
TRANS
 
CO MM S
 
ND
 
Tar get
 
ATI
 
LP
1
 
LP
0
 
bit  7
 
bit  0
 
Bank2: bi t 7
 
ST RE AM: 
St eami ng Met hod 
 
S ect ion 
8. 2
 
0 = 1
-
wire
 
1 = 2
-
wire (I
2
C)
 
Bank2: bi t 6
 
T RANS : 
Charge Trans f er Frequenc y 
 
S ect ion 
7. 7
 
0 = 512k Hz
 
1 = 250k Hz
 
Bank2: bi t 5
 
COMM S :
 
St reami ng
 
S ect ion 
8
 
0 = Dis abled
 
1 = E nabled
 
Bank2: bi t 4
 
ND:
 
Nois e Det ec t
 
S ect ion 
7. 3
 
0 = Dis abled
 
1 = E nabled (1
-
wire c omms  only )
 
Bank2: bi t 3
 
T arget:
 
A TI t arget c ounts
 
S ect ion 
7. 8
 
0 = 1200
 
1 = 1024
 
Bank2: bi t 2
 
ATI
: A TI S elec t ion
 
S ect ion 
7. 9
 
0 = Full 
 
1 = P art ial
 
Bank2: bi t 1
-
0
 
LP
: P owermode S elect ion
 
S ect ion 
7. 12
 
00 = BP , 9ms  (64ms if z oom is disabled) 
 
01 = NP,  128ms
 
10 = LP 1,  256ms
 
11 = LP 2,  512ms
 
Ta b l e 
3
.
5
: 
Us e r Se l ec ta bl e  
Con fi g u ra ti on  Opt io n s: Ba nk  3  (0x C7H)
 
~
 
~
 
~
 
~
 
Zoom
 
~
 
~
 
CTRL
 
bit  7
 
bit  0
 
Bank3: bi t 7
-
4
 
S ystem  Use
 
Bank3: bi t 3
 
Zoom : 
Zoom Dis able
 
S ect ion 
7. 13
 
0 = ZoomE nabled
 
1 = Zoom Dis abled
 
Bank3: bi t 2
-
1
 
S ystem  Use
 
Bank3: bi t 0
 
CT RL: 
Cont rolI nput  
 
S ect ion 
7. 1
 
0 = Halt Charge
 
1 = Filt er Halt
 
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4
 
Measuri ng 
C
a pacit ance 
U
sing th e 
Cha rge Tran sfer
 
M
etho d
 
The 
char ge 
t r ansf er
 
m ethod of  capacit ive 
sensing is em ployed onthe IQ S228AS/ B.
 
A char ge cycle is used to t ake a m easur em ent 
of t he capacit ance of t he sense elect r ode 
( connect ed t o Cx) r elative t o ground. It consist s 
of a ser ies of pulses char ging Cx and 
dischar ging 
Cxt ot her eferencecapacit or , at t he 
char get r ansf erf r equency( F
CX
 
-
 
r ef ert oSection 
11
) . Thenum ber of t hepulsesr equir edt or each 
a t r ip volt a
ge on t he refer ence capacit or is 
r efer r edt oast he 
Count  
value( CS) whichist he 
instant aneous capacit ive m easur ement . The 
Counts ( CS)  ar e used to det er m ine if  eit her a 
physical cont act  or proxim it y event  occurr ed, 
based on t he change in CS det ect ed. The 
t ypical values of CS, wit hout a t ouch or  
proxim it y condit ion r ange bet ween 1344 and 
1865 counts,  although higher and lower counts 
can be used based on t he application 
r equir ement s.  With CS larger t han +/
-
1865 t he 
gain of t he syst em  may become t oo high 
caus
ing unst eady oper ation.
 
The I Q S228AS/ B schedules a char ge cycle 
ever y t
SA MP LE
 
seconds t o ensure r egular 
samples f or  pr ocessing of r esult s.  The dur at ion 
of t he char ge cycle is def ined as t
CH A RGE
 
and 
variesaccordingt ot hecountsr equir edt or each 
t he tr ip 
volt age.  Following t he char ge cycle 
other activit ies such as dat a st r eam ing is 
completed ( if  in str eam ing m ode) ,  bef ore t he 
next  char gecycle is init iat ed.
 
Pl easenot e: A tt achingaprobet ot heCxpi n 
w il l i ncrease t he capacit ance of t he sense 
plat e and t h
eref ore C
S
.  T his may have an 
i mmediat e i nf l uence on t he Counts val ue 
( decrease t
CH AR GE
) and cause a proximit y or 
t ouchevent .
 
Af t er t
HA LT
 
secondst hesyst em will 
adj ust t o accomm odate f or t his change. I f t he 
t otal load on Cx,  wit h t he probe at t ached is st ill 
lowert hant hem aximumCxloadt hesyst emwill 
cont inuet of unct ionnor mallyaft ert
HA LT
 
seconds 
wit h t he probe att ached.
 
Fi g u re 
4
.
1
: 
Cha rge  cy cl e s a s ca n  b e s ee n  on  CX.
 
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Fi g u re 
5
.
1
: 
DYCAL  Ope ra ti o n (Se l f Capa c iti ve  Se ns in g )
 
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6
 
Operatin g Prin ciple
 
Figur e 5.1 is a visual r epr esent ation of  t he 
DYCAL f unct ionalit y. The O UT pin is used t o 
indicate t he st atus of a DYCAL event  ( bot h 
proxim it y a
nd a t ouch event) . The DYCAL 
f unct ionalit y is sum m ar ised below.  
 
Non
-
T ouch M ode
 
The O UT pin is act ivated on t he successf ul 
det ection of a pr oxim ity event and will r emain 
activat edf ort hedur ationoft heproxim it yevent , 
per m itt ing t hat  t his event is no lo
nger t han t he 
f ilt er halt  t im ings.  The LTA will be halt ed in t his 
t im e.
 
Assoonasat ouchcondit ionisdet ect ed( Count 
values, orCS, f allbelowT
T HR
) , t hecont r ollerwill 
dynamically r e
-
calibrat e it s LTA t o t he halted 
LTA 

T
T HR
.  The I C is now in TouchM ode. 
 
T ouch M ode
 
Af t er t he re
-
calibrat ion of t he LTA, it will f ollow 
t he Count s ( CS) and be allowed t o t r ack slow 
varying envir onm ent al changes. I f t he Counts 
( CS)  were t o exceed t he LTA by t he r elease 
t hreshold ( REL_T
T HR
) t he tou
ch det ect ion will  
st op and t he O UT pin will r etur n t o it s or iginal  
st ate.
 
7
 
Configur able S ettin gs 
 
This section descr ibes t he user  conf igur able 
opt ions oft heI Q S228AS/ B inm ore det ail. 
 
User progr amm able options are selected by 
conf igur ing t he O TP select ion
s. Please r ef er t o 
Section 
2.2. 2
 
f oranover viewoft heconf igur able 
sett ings.
 
7 .1
 
CT RL: Ex ternal Control
 
T he user has t he opt ion t o cont rol some  
parame
t ers of  t he I Q S228AS/B f rom an 
ext ernalsource. T heI Ccanbeusedindef au lt  
mode (CTRL unc onn ect ed) or t he user ca n  
use t he CT RL pin t o select  whet her t he 
mast er should halt  t he charge t ransf ers (i.e.  
st opoperat ion)ort ohal t LT A
 
f ilt ert rackingon  
t he
 
I Q S228AS/B.
 
7 .1 .1
 
Cha rge  Ha lt
 
I f  CT RL is sampled high f or lon ger t han  
T
EXT _H ALT,  
t he charge co nversion cycle w ill be  
halt ed,  once t h e current  conversion has be en  
complet ed.  T he devic e will rema in in t hi s  
st andby mode unt il t he CT RL line is sampled  
low 
aga in.  An aut omat ic reseed is perf ormed  
direct lyaf t erCT RLisreleasedt ocompensat e  
f or any enviro nment al changes w hich mi ght  
have occurred d uring t h e st andby mode.
 
7 .1 .2
 
Hal t LT A 
F
il te r
 
W hen conf igured in t his  mode,  CT RL can be 
used t o cont rol t he LT A halt  t i
mes when  
sampledhig h. T heCT RLpinhasprecedence  
over t he conf ig urat io ns bit s select ed f or t h e  
halt  t imings.
 
I f  CTRL is sam pled high f or longer  t han 
T
E X T _HA LT
,  t he f ilt er will be halt ed unt il t his pin is 
sampled low.
 
.
 
Fi g u re 
7
.
1
: 
Ma s te r Out p u t s ig na l  o n CTRL  p in  t o  Ha l t Op era tio n  o r Fi l te r Ha l t
 
7 .1 .3
 
P uls e  on CT RL:
 
T he pulse on t he CT RL pin needs t o adher e  
t o t he f ollowing t imin g const r
aint s:
 
25ms  <  T
PULSE 
<  35ms
 
7.1. 3. 1
 
I Q S228A S/ B:  Reseed
 
A reseed co ndit io n can be init iat e d by  
generat i ngap ulseo nt heCT RLpin. T heLT A  
will b e reset  t o t he coun t ,  f orcing t he O UT  pin 
t o it s original st at e.  
 
I f  t he count  value is out side it s allow abl e  
limits,  t he device will f orce an AT I  event  t o 
reset  t he syst em sensitivit y.  (Please ref er t o 
sect ion 
8. 1
 
f or more det ail).
 
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7.1. 3. 2
 
I Q S228A S/ B:  re
-
AT I
 
Ar e
-
ATIcondit ioncanbeinit iatedbygener at ing 
a pulse on t he CTRL pin. This f unct ion can be 
issued at anyt im e.
 
Fi g u re 
7
.
2
: 
Ma s te r Out p u t s ig na l  o n CTRL  t o fo rce  a  Res e ed Con d i ti o n
.
 
7 .2
 
LOG IC 
 
Thelogicusedbyt hedevicecanbeselectedas 
active HIG H or act ive LOW.  The out put  pins 
O UT and CTRL will f unct ion based on t his 
selec
t ion.  When conf igured as Act ive High, t he 
out put swillr emainhighaft er PO Runt ilATIhas 
completed.  The ATI t im e will vary accor ding t o 
t he capacit ive load on t he sensor,  but  t ypically 
does not exceed 500ms.
 
Co n f igu ratio n :  
Bank0
 
b it 5 :  Lo g icO u t p u t  
Sele ctio n
 
Bi t
 
Select i on
 
0
 
Soft ware O pen Dr ain Active Low
 
1
 
Act ive High 
 
Asoft war eopendrainout put isim plement edf or 
t he O UT pin when configured in active low 
m ode. The volt age on t he pull
-
up r esist or  is 
lim it ed t o t he 
I Q S228AS/ B supply volt age.  A 
4k7
-

is 
r ecomm ended.
 
7 .3
 
RF Nois e  on I QS 2 28 AS/ B 
 
7 .3 .1
 
ND: RF Nois e  De tec tion
 
The IQ S228AS/ B has RF Noise Detect ( ND) 
f unct ionalit y. I f ND f unct ion is enabled, t he 
I Q S228AS/ B is able t o detect RF Noise 
on t he 
TOUT/ ND pin. Furt her details on t he wor king of 
t his can be f ound in the Application Not es: 
AZD015 and AZD015b. 
 
Note:  ND input enable is a legacy input and is 
not  r ecomm ended f or  use in new designs. The 
input has been desensitized by def ault and 
is 
not t estedt otr iggerataspecif icRFinputpower 
level
 
7 .3 .2
 
IQ S 2 28 AS/ B RF Noise  I mmunity
 
TheI Q S228AS/ Bhasadvancedim m unit yt oRF 
noisesour cessuchasGSM cellulart elephones, 
DECT, Bluet oot h and WI FI  devices. Design 
guidelines should however be f ollowe
d t o 
ensure t he best noise im m unity.  The design of 
capacit ivesensingapplicationscanencom pass 
alarger angeof sit uat ionsbut asasum m ar yt he 
f ollowing should be not ed t o im prove a design:
 
>
 
Aground pla nesh oul db eplac edu ndert h e  
I C,  except  under t he 
Cx line.
 
>
 
All t he t racks on t he PCB must be kept as 
short  as possible.  
 
>
 
T he capacit or bet we en  VDDHI  and G ND  
as well as bet ween VR EG and G ND,  must  
be place d as close as p ossible t o t he I C.
 
>
 
A 100 pF capacit or should be place d in  
parall el wit h t he 1uF  capacit o
r bet wee n  
VDDHI andVSS.Anot her100pF capacit or  
can be p laced in par allel wit h t he 1 uF  
capacit or bet we en VRE G  and G ND.
 
>
 
I f  t he device is t oo sensit ive f or a specif ic  
orderopt ion,
 
aparas it iccapacit or(
t ypicall y
 
20pF ) can be added b et ween t he Cx line  
and
 
grou nd.
 
>
 
Proper sense elect rod e  and but t on desig n  
princip les must  be f ollo wed.
 
>
 
Unint ent i onal co upl ing of  sense elect rod e  
t o ground an d ot her  circuit ry must  be 
limited by increasin g t he dist ance t o t hese 
sources.
 
I n som e inst ances a ground plane som e 
dist an
ce fr om t he device and sense electr ode 
m ay provide signif icant  shielding f r om 
undesir ed inter f er ence. 
 
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When t he capacit ance bet ween t he sense 
electr ode and ground becom es t oo lar ge the 
sensit ivit y of t he devicem ay be influenced.
 
7 .4
 
P rox imi ty 
T hre s hold
 
T he 
I Q S228AS/ B
 
has 4 proximity t hreshol d  
set t ings indicat e d in c ount s.  T he proximity 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired sensit ivit y and noise immunit y.  A 
proximityevent ist rigge redif t heCount s(CS) 
diverges more t han 
t h e select ed t hreshol d  
f rom t he LT Af or 6 consecut ive cycles.
 
Conf i gurat i on:  
Bank0
 
bi t 1
-
0 
P
T HR 1
:P
T HR 0
: Proximi t yThresholds
 
Bi t
 
Select i on
 
00 
 
4
 
01 
 
2
 
( M ost sensit ive)
 
10 
 
8
 
11 
 
16
 
( Least sensit ive)
 
7 .5
 
T ouchT hre s hold
 
T he 
I Q S228AS/B has 8 t ouch t hreshol d  
set t ings indicat ed i n  count s.  T he t ouch 
t hresholdisselect edbyt hedesignert oobt ain  
t he desired t ouch se nsit ivit y.  A t ouch event  is 
t riggered if  t he Count s  (CS) diverges more 
t han t he select ed t hres hold f rom t he LT A f or
 
2 consecut ive cycles
. 
 
I nt heNO
-
T O UCHst at et heCount s(CS)must  
diverge mor e t han t he t ouch t hresho ld val ue  
below
 
t he LT A. O perat ing in t he T O UCH  
ST AT E,  t he CS must diverge more t han 
REL_T
T HR
 
of  t he t ouch threshol d valu e 
abov e
 
t he LT A
.
 
The f ollowing equ
ation is used t o det erm ine if  a 
t ouch or r elease event  occurr ed.
 
NO  TO UCH STATE:
 
LTA
 
CS<=
 
T
T HR
 
TOUCH STATE:
 
CS 
-
 
LTA
 
>=
 
REL_T
T HR
 
Conf i gurat i on:  
Bank0
 
bi t 4
-
2T
T HR 2
:T
T HR 0
 
T ouchT hreshol ds 
 
T
T HR 2
:T
T HR 0
: 
Touch Thr esholds 
 
Bi t
 
Select i on
 
000 
 
72/ 256
 
001 
 
4/256( M ost sensit ive)
 
010 
 
8/256
 
011 
 
24/ 256 
 
100 
 
48/ 256
 
101 
 
96/ 256
 
110 
 
128/256
 
111 
 
160/256( Least sensit ive)
 
7 .6
 
Multipli e rs
 
Whenusingpar t ialATI,thebasevalueissetup 
using t he m ult ipliers.  Com pensat ion will st ill be 
add
ed aut om aticallyt oreach t he t ar get.
 
7 .7
 
Cha rge T ra ns fer
 
The char ge t r ansf er f r equency of t he 
I Q S228AS/ B is adj ustable. Changing t he 
t r ansf er f r equency will aff ect  sensit ivity and 
r esponser ate.  Two opt ions ar e available:
 
Conf i gurat i on:  
Bank2
 
bi t 6
 
T RA NS:
 
Char ge Tr ansf er  Frequency
 
Bi t
 
Select i on
 
0
 
512kHz
 
1
 
250kHz
 
7 .8
 
T a rge t Counts
 
The t arget  oft he ATI algorithm can be adj ust ed 
bet ween1200( def ault )and1024count s. When 
less sensit ivit y is r equir ed, t he lower counts wil
l 
also incr easer esponse rate:
 
Conf i gurat i on
: 
Bank2
 
bi t 3
 
T arget :
 
ATI t ar get counts
 
Bi t
 
Select i on
 
0
 
1200
 
1
 
1024
 
7 .9
 
E na ble P a rtial ATI
 
I n some applications t he st art up t im e of t he 
I Q S228AS/ B m ay be r equir ed t o be decr eased. 
This is 
possible by enabling par t ial ATI,  if  the 
m ult ipliers r equir ed can be det erm ined, and t he 
compensat ion alone is adequate t o account  f or 
envir onm ent al change.
 
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Conf i gurat i on:  
Bank2
 
bi t 2
 
AT I:
 
Par t ial ATI
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enab
led
 
7 .1 0
 
DYCAL T URBO
 
I n som e applications, it m ay be r equir ed t o 
im provet heent ryandexit speedofTouchM ode 
by r em oving t he ent ry r eseed delay, as well as 
t urning of f t he AC
-
f ilt er s. This can be done by 
enabling t he DYCAL TURBO m ode.
 
Conf i gurat i on:  
Bank1
 
bi t 3
 
T URBO:
 
DYCAL TURBO
 
Bi t
 
Select i on
 
0
 
Disabled
 
1
 
Enabled
 
Notet hatifDycalTur boisenabled,t heLTAwill  
halt  at t he r eseed point for t
HA LT
 
if Touch M ode 
isent er edbef or eapr oxim it yevent isr egist ered.
 
7 .1 1
 
Filte r Ha lt
 
The 
LTA
 
f ilt
er only executes while no proxim it y 
events ar e det ect ed to ensure com pensat ion 
only f or envir onm ent al changes. O nce a t ouch 
eventisdet ect edt hef ilt erwillr esumeoper ation 
and will no longer  be halt ed.  The halt t im ing 
conf igur ation sett ings determ ine ho
w long t he 
f ilt er is halt ed.
 
Conf i gurat i on:  
Bank1
 
bi t 7
-
6
 
Bi t
 
Select i on
 
00 
 
20 seconds
 
01 
 
40 seconds
 
10 
 
Never
 
11 
 
3 seconds
 
T he presenc e of  a pro ximity condit ion f or a 
t ime exceeding t he halt  t ime will be deemed 
as a f ault  st at e which w ould t rigg er a resee d  
event whereaf t ert heou t put st at eont heO UT 
pin wil l be reset  t o it s original co ndit io n.  
 
7. 12
 
Low P owe r Modes  
 
There exist  4
 
LP m odes.  The LP m odes will  
decr ease t he sam pling fr equency of  CS which 
will r educe t he 
power consumpt ion
 
of  t he 
device. However , t his will also increase t he 
r esponset im e of t he device.
 
Conf i gurat i on:  
Bank2
 
bi t 1
-
0
 
Bi t
 
Select i on
 
00 
 
9.1m s ( BP)  64m s if  Zoom  disabled
 
01 
 
128ms( Norm al Power Mode)
 
10 
 
256ms 
( Low PowerM ode 1)
 
11 
 
512ms( Low PowerM ode 2)
 
7 .1 3
 
Zoom
 
The I Q S228AS/ B has t he opt ion t o disable t he 
zoom f unct ion. Thism eanst hat t hesam plet im e 
will st ay f ixed,  even when proxim ity and t ouch 
events are m ade. When t his is activat ed, boost 
power m ode 
will change fr om a 9m s sample 
t im e, t o 64m s.
 
Conf i gurat i on:  
Bank3
 
bi t 3
 
Zoom:
 
Zoom Disable
 
Bi t
 
Select i on
 
0
 
Enabled 
 
1
 
Disabled
 
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®
 
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8
 
Streami ng Mo de
 
F or a more complet e d escript ion of  t he dat a  
st reamingprot ocol, pl ea seref ert oApplicat
ion  
Not e AZ D017 on t he Azot eq websit e.
 
T heIQ S228AS/Bhast hecapabilit yt ost ream 
dat at oaMCU.T hisprovidest hedesignert he  
abilit y t o obt ain t he p a ramet ers and sensor  
dat a wit hin t he device in order t o aid design  
int oappl icat ions. Dat as t reamingis 
perf ormed  
as a 1
-
wire dat a prot ocol on t he O UT  pin O R 
I
2
Cint erf ace.T heout put f unct ionof t hispinis 
t heref orelost whent hedeviceisconf iguredi n  
st reaming mode.  Dat a Str eaming can be  
enab led as ind icat ed be low:
 
Conf i gurat i on:  
Bank2
 
bi t 5: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
Disabled 
 
1 
 
Enabled
 
Figur e 
8
.
1
 
illust rat es t he communicat io n  
prot ocol f or init ialisin g and sending dat a wit h  
t he 1 wire communicat i on prot ocol.  
 
1.
 
Communicat i ons init i at e d by a ST ART 
bit .  Bit  def ined as a lo w condit io n f or  
T
S
T ART
. 
 
2.
 
F ollowi ng t he ST ART  bit , is a 
synchronisat i on byt e (T
INI T
 
= 0xAA).  
T hisbyt eisusedbyt heMCUf orclock 
synchronisat i on.
 
3.
 
F ollowi ng T
I NIT
 
t he dat a byt es will be  
sent .  8 Bytes will be sent  af t er each 
charge cycle.
 
4.
 
Each byt e sent  wi ll be  precede d by 
a 
ST ART  bit  and a ST OP bit  will f oll ow  
every byt e.  
 
5.
 
ST O P bit  indicat ed by  t aking pi n 1  
high.  T he ST O P bit does not  have a 
def ined p eriod.
 
Fi g u re 
8
.
1
: 
D
e b ug : 1
-
wire  strea mi n g  De bu g  Mo d e
.
 
Thef ollowingt abledef inest hebitdef init ionsf or 
t he IQ S228AS/ B devices dur ing Str eam ing 
M ode.
 
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Ta b l e 
8
.
1
: 
By te  De fin i tio n s f o rStre a mi n g  Mo de
 
Byt e (B)
 
Bit
 
Value
 
0
 
AA
 
1
 
7 :0
 
CS Hig h  by te
 
2
 
1 5 :8
 
CS L o w b y te
 
3
 
2 3 :1 6
 
L TA Hig h b y te
 
4
 
3 1 :2 4
 
L TA L o w by te
 
5  Sy s
 
Fl a gs
 
39
 
38
 
37
 
36
 
35
 
34
 
33
 
32
 
~
 
~
 
Ac ti ve  Hi gh
 
Fi l te r Ha l t
 
L P a c ti v e
 
ATI  Bu sy
 
Noi s e Fo u nd
 
In  Z o om
 
6
 
47
 
46
 
45
 
44
 
43
 
42
 
41
 
40
 
To u ch
 
Pro x im i ty
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
M u l ti p li e rs
 
7
 
5 5 :4 8  
 
Com p e ns a ti o n 
 
8
 
6 3 :5 6
 
Cou n te r 
 
8 .1
 
E v e nt Mode
 
TheIQ S228AS/ BhasEvent M odeim plem ent ed 
dur ing 1
-
wir e comm unication. This allows t he 
M CU t o m onit or t he PO UT pin 
f or  st at us 
changes ( pr oxim ity or t ouch m ade or r eleased 
events) instead of  capt uring dat a cont inuously.  
Uponast at uschange,t heIQ S228AS/ Bwillpull 
t he PO UT pin f or  low t o indicate t o t he M CU t o 
r eaddat a.ThePO UTpinwillst aylowf or1.6m s.
 
8 .2
 
I
2
C
 
The I
Q S228AS/ B also allow f or I
2
C st ream ing 
f ordebugging.DataSt reamingcanbechanged 
f r om  1
-
wir e pr otocol t o I
2
C as shown below:
 
Conf i gurat i on:  
Bank2
 
bi t 7: Streami ngM ode
 
Bi t
 
Select i on
 
0 
 
1
-
Wire Pr otocol
 
1 
 
I
2
C St r eam ing
 
The M em ory M ap f or t he IQ S228AS/ B can be 
f ound in 
Appendix A
. 
 
The IQ S228AS/ B can comm unicat e on an I 2C 
 
ll
-
upr esist or sshouldbeplacedonSDAandSCL.
 
The Contr ol byt e indicates t he 7
-
bit device 
address ( 0x44H) and t he Read/Wr it e indicator 
bit .
 
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9
 
Auto T uning Imp le mentatio n (AT I)
 
ATI is a sophist icated t echnology im plement ed 
in t he latest  
gener ation Pr oxSense
®
 
devices 
t hat  opt im ises t he per f orm ance of  t he sensor  in 
a wide r ange of applications and envir onm ent al 
condit ions (r efer  t o application not e AZD0027 
-
 
Auto TuningI m plem ent at ion) . 
 
ATI m akes adj ust ment s t hr ough ext ernal 
r efer ence capa
cit or s unnecessar y ( as r equir ed 
by m ost  ot her  solutions)  t o obt ain opt im um 
per f or m ance.
 
9 .1
 
Full AT I
 
The IQ S228AS/ B im plem ent s an aut om at ic ATI  
algor it hm. This algor it hm aut om atically adj ust s 
t he ATI par am eter s t o opt im ise t he sensing 
electr odes connect ion t o 
t he device.  
 
The device will execute t he ATI algor it hm 
whenever t he device st ar t s
-
up and or when t he 
counts ar e not wit hin a pr edeter m inedr ange. 
 
There are 2 im port ant  def init ions t o under st and 
f or ATI:
 
9 .2
 
AT IT a rge t
 
ATI adj usts int ernal cir cuit r y accor ding t o t wo 
par amet ers,  t he 
ATI multi pli er
 
and t he 
AT I 
compensati on
. 
 
>
 
The 
ATI mul ti pli er
 
can be viewed as a 
cour seadj ust m entoft heCounts( CS) ,used 
t o achieve t he ATI BASE value.  
 
>
 
The 
ATIcompensat i on
 
isaf ineadj ust
m ent 
used t o r eacht he ATI  TARG ET value. 
 
With t hese t wo par ameters t he Count s ( CS)  of 
t he IQ S228AS/ B is t uned unt il an ATI t ar get 
value of 1200 is achieved.
 
9 .3
 
AT I
BASE
: Si gnifica nc e of AT I Bas e
 
Asm ent ionedabove, t he 
ATImul ti pli er
 
isused 
t o select a base 
value f or t he ATI. The ATI 
BASEvalueisim port ant ,asthisdet erm inest he 
sensit ivit y of t he device.  The sensit ivit y can be 
def ined as:
 
Sensit ivit y = ATI TARG ET / ATI BASE
 
TheATITar getr emainsfixedat1200anditcan 
t hus be seen f r om t his t hat a large
r  base value 
will r esult  in a less sensit ive device.  The 
designer has t he opt ion t o incr ease/r educe the 
sensit ivit y of t he syst em  t hrough t he ATI BASE 
value.  For  m ost  applications t he ATI BASE 
should be kept  def ault .
 
The opt ions f or  t he ATI BASE values are
 
as 
f ollows:
 
Conf i gurat i on:  
Bank1
 
bi t 2
-
0
 
Bi t
 
Select i on
 
000
 
200
 
001
 
50
 
010
 
75
 
011
 
100
 
100
 
150
 
101
 
250
 
110
 
300
 
111
 
500
 
9 .4
 
S e ns itivity  
D
ue  to ATI 
 
Theadj ust m ent of t heATI par am et erswillr esult  
in variat ions in t he count and sensit ivi
t y. 
Sensit ivit y can be observed as t he change in 
count as t he r esult of a 
f ixed
 
change in sensed 
capacit ance. The ATI param et ers have been 
chosen t o provide signif icant over lap.  I t m ay 
t her ef ore be possible t o select var ious 
combinat ions of  ATI m ult iplier and ATI  
compensat ion set t ings to obt ain t he sam e 
count. Thesensit ivit yof the 
variousopt ionsm ay 
however  be dif f er ent f or the same count . 
 
9 .5
 
AT I P roc e dure
 
Whilet heAutom aticATIalgor it hmisinprogr ess 
t his condit ion will be indicated in t he st r eam ing 
dat a and pr oxim ity and touch event s cannot  be 
det ected.  The device will only brief ly r emain in 
t his condit ion and it will be ent er ed only when 
r elatively lar
ge shift s in t he count has been 
det ected.
 
The aut om atic ATI f unct ion aim s t o m aintain a 
const antcount,r egar dlessoft hecapacit anceof  
t hesenseelectr ode( wit hint hem axim umr ange 
oft he device) . 
 
The eff ect s of aut o
-
ATI on t he application ar e 
t hef ollo
wing:
 
>
 
Aut omat ic adj ust ment  of  t he devic e  
conf igurat io n and processing paramet er s  
f or a wide range of  P CB and app licat io n  
designst omaint ai naopt imalconf igurat i o n  
f or proximity and t ouch det ect ion.
 
>
 
Aut omat ic t uning of  t he sense elect rod e at  
st art
-
up t o o
pt imise t he sensit ivit y of  t he 
applic at ion.
 
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>
 
Aut omat ic re
-
t uning when t he devic e  
det ect s changes in t he sensing elect rod es  
capacit ance t o acco mmodat e a large  
rangeof chang esint heenvironme nt of t he 
applic at ion t h at  inf lue nces t he sensi n g  
elect rode.
 
>
 
Re
-
tu
nin g on ly occur s during devic e  
operat io nwhenarelat iv elylargesensit iv it y  
reduct ion is det ect ed.  T his is t o ensure  
smoot h operat ion of  the device durin g  
operat io n.
 
>
 
Re
-
t unin g may t emporarily inf lue nces t he  
normal f unct ioni ng of  the device,  but  in  
most  in
st ances t he ef fect  will be hardly  
not iceab le.
 
>
 
Short lyaf t ert hecompletionof t here
-
t unin g  
process t he sens it ivit y of  a Proximity  
det ect ionmaybereduc edslight lyf oraf ew 
seconds as int erna l f ilt e rs st abilises.
 
Autom at ic ATI can be im plement ed so 
eff ec
t ively duet o:
 
>
 
Excellent  syst em signal t o noise rat i o  
(SNR).
 
>
 
Eff ect ive digit al sign al processing t o  
remove AC and ot her n oise.
 
>
 
T he very st able core of t he devices.
 
>
 
T he built
-
in ca pab ilit y t o accommodat e a  
large ran ge of  sensing e lect rod e  
capacit ances.  
 
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®
 
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10
 
DYCAL Specifi c set tings
 
1 0 .1
 
Rel e as e T hres hold
 
TheIQ S228AS/ Bhast heopt iont oincreaset hereleaset hresholdwheninTM. Thishelpst hatsm all 
variat ions caused by m oving a f inger/ hand on a touch pad will not cause the I C t o exit TM
, m aking 
t he solution m or er obust . The opt ions available are shown below:
 
Conf i gurat i on:  
Bank0
 
bi t 6
 
Bi t
 
Select i on
 
0 
 
75% of  Ent r y Delt a
 
1 
 
87. 5% of Entr y Delt a
 
Af t er ent er ing TM,  as soon as t he LTA f ollows t o wit hin 16 counts,  a Ent r y Delt a value is calculated 
as:
 
>
 
Entr y Delt a=LTA
entry
 
-
 
LTA
cur re nt
 
This calculated Entr y Delt a value is used f or t he Release Threshold as shown above.
 
I f  upon entr y,  t he LTA value is 
alr eady wit hin 16 Counts,  t he Ent r y Delt a is t aken as t he calculated 
t oucht hreshold value.
 
1 0 .2
 
Input E na ble
 
TheIQ S228AS/ Bcanbeconf igur edt ohavet heCTRLpinf unct ionasanout putonaPr oxim it yevent.
 
Choosing t he CTRL pin as out put r emoves t he Filt er Ha
lt  and Halt Char ge opt ions of t he pin as an 
input.
 
Using a t ouch event  t o act ivate O UT will m ake t he syst em  less sensit ive which is needed in some 
applications. The LTA will st ill halt  wit h t he det ect ion of a pr oxim it y but  will not  have an 
inf luence on 
t heO UT pin. The LTA will st ill r e
-
calibrat e once at ouch condit ion is det ected.
 
Conf i gurat i on:  
Bank0
 
bi t 7
 
Bi t
 
Select i on
 
0 
 
O utput
 
1 
 
I nput
 
IQ  Sw it ch
®
 
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11
 
Electric al Sp ecific a tions
 
1 1 .1
 
Abs olute Ma x imum 
Spe c ifica tions
 
Exceeding t hesemaximum specif i cat i ons may cause damaget ot hedevice
.
 
O per at ing t em per atur e
:
 
I Q S228AS
 
-
20°Ct o 85°C
 
I Q S228B
 
-
4
0°Ct o 85°C
 
Supply Volt age ( V
DDHI
 
V
SS
)
 
3.6V
 
M axim um  pinvolt age(OUT, CTRL)
 
V
DDHI
 
+ 0.
3
V
 
Pin 
volt age ( Cx)
 
1.7V
 
M inim um pin volt age ( VDDHI ,  VREG, O UT, CTRL, Cx)
 
V
SS
 
-
 
0.
3
V
 
M inim um power
-
on slope
 
100V/ s
 
ESD prot ect ion ( VDDHI, VREG ,  V
SS
, O UT, CTRL, Cx)
 
8kV
 
1 1 .2
 
Ge ne ral Cha rac teri s tic s
 
I Q S228AS/ B devices ar e r at edf or supply volt ages bet ween 1.8V and 3
. 6V.  
 
Ta b l e 
11
.
1
: 
IQS2 28 AS/B Gene ra l  Ope ra ti ng  Co nd i tio n s
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
T YP
 
MAX
 
UNIT
 
Su p p ly  vo l tag e
 
V
DDHI
 
1.
8
 
3 .3
 
3 .6
 
V
 
In te rn al  reg u l ato r ou tp ut
 
DDHI 
 
V
REG
 
1 .6 4
 
1 .7
 
1.
75
 
V
 
Bo o s t Po wer o pe ra ti n g c u rren t 
 
DDHI 
 
I
IQ S2 2 8 AS/B_ BP
 
120
 
129
 
135
 
˛
A
 
Norm a l  Po wer op e ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ NP
 
4 .9
 
6 .4 5
 
8 .1
 
˛
A
 
L o w p o wer1  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B
 
L P1
 
2 .9 5
 
3 .8
 
4 .8 5
 
˛
A
 
L o w 
p o wer2  o pe ra ti n g c u rren t
 
DDHI 
 
I
IQ S2 2 8 AS/B_ L P2
 
1 .8 8
 
<2 .5
1
 
3 .2
 
˛
A
 
C
x
 
p i n c a p ac i ta n ce
 
DDHI 
 
C
C
xL o a d
 
120
 
pF
 
Char ge Transf er  Tim ings f or  low powerm ode isf ound in 
Section 
7.12
.
 
Ta b l e 
11
.
2
: 
Sta rt
-
u p a n d s h u t
-
d o wn sl o pe  Ch a rac te ri s ti cs
 
DES CRIPT IO N
 
Co n d it ion s
 
PARA MET ER
 
MIN
 
MAX
 
UNIT
 
POR
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
POR
 
0 .3
2
 
1.
7
 
V
 
VDDHI 
re s e tl e ve l
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VDDHI
 
N/A
 
1 .7
 
V
 
VREG
 
re s e t le v el
 
V
DDHI
 
Sl o p e  

1 0 0 V/s
 
RESET
VREG
 
N/A
 
1 .5 8
3
 
V
 
1
 
Al l l ow p ower c urr en t v al ue s  aris e fr om 
c h arac teriz a tio n do ne fro m (
-
) 35°C  to ( + ) 8 5°C a t 3. 3V.
 
2
 
F or a p ower c y c le,e ns ure lower ing  VDD HI b el ow th e min im um v a lue  bef ore r a m pin g VD DHI pas t th e 
max im um PO R v a lue
 
3
 
F igur e  
2
.
4
 
Cap ac itors  C 1 & C3 s h ou ld be c hos e n to  c omp ly  wit h th is  s pec if ic at io n
 
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®
 
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1 1 .3
 
Output Cha ra c teri s tics
1
 
Ta b l e 
11
.
3
: 
TOUT Cha ra c te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S INK  
 
O utput  Low 
volt age
 
100mV
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
100mV
 
V
DDHI
 
= 3.3V
 
10
 
100mV
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
4
: 
POUT Ch a rac te ri sti c s
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
10
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.1V
 
V
DDHI
 
= 3.3V
 
10
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
Ta b l e 
11
.
5
: 
Comb i ne d  Cha ra cte ri s ti cs
 
Symb o l
 
Desc ript ion
 
V
OH
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNIT
 
I
S OURC E  
 
O utput  High 
volt age
 
0.9* VDDHI
 
V
DDHI
 
= 3.6V
 
~
 
~
 
TBD
 
mA
 
0.9* VDDHI
 
V
DDHI
 
= 3.3V
 
~
 
17
 
~
 
0.9* VDDHI
 
V
DDHI
 
= 1.8V
 
TBD
 
~
 
~
 
Symb o l
 
Desc ript ion
 
V
OL
 
Co n d it ion s
 
MIN
 
T YP
 
MAX
 
UNI T
 
I
S INK  
 
O utput  Low 
volt age
 
0.1V
 
V
DDHI
 
= 3.6V
 
TBD
 
mA
 
0.V
 
V
DDHI
 
= 3.3V
 
20
 
0.1V
 
V
DDHI
 
= 1.8V
 
TBD
 
1
 
I/ O sink capabilit ies only in Act ive Low conf igur ation. I /O sour ce capabilit ies only in Act ive High 
conf igur ation.
 
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1 1 .4
 
P a c ka ging I nforma tion
 
1 1 .4.1
 
T S OT2 3
-
6 
 
Fi g u re 
11
.
1
: 
TSOT2 3
-
6  Pac k ag i n g
1
 
Ta b l e 
11
.
6
: 
TSOT2 3
-
6  Di me nsi o n s
 
Dimen sion
 
Min ( mm )
 
Max (m m)
 
A
 
2 .6 0
 
3 .0 0
 
B
 
1 .5 0
 
1 .7 0
 
C
 
2 .8 0
 
3 .0 0
 
D
 
0 .3 0
 
0 .5 0
 
E
 
0 .9 5  Bas ic
 
F
 
0 .8 4
 
1 .0 0
 
G
 
0 .0 0
 
0 .1 0
 
H
 
0 .3 0
 
0 .5 0
 
I
 
0°
 
8°
 
J
 
0 .0 3
 
0 .2 0
 
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1 1 .4.2
 
WLCS P
-
8
 
Fi g u re 
11
.
2
 
IQS2 2 8 B W L CSP
-
8  Di me n si o ns  (i n mm)
 
Top view
 
Bott om  view
 
Side
 
view
 
P i n 1
 
m
arki ng
 
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®
 
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®
 
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Marc h 2022
 
1 1 .4.3
 
DFN
-
6
 
DFN
-
6 Packaging
 
DFN
-
6 Dim ensions 
 
Dimen sion
 
Min
 
Max
 
A
 
3 .0 0m m
 
3 .0 0m m
 
B
 
2 .5 0m m
 
2 .5 0m m
 
C
 
0 .3 0m m
 
0 .3 0m m
 
D
 
0 .3 5m m
 
0 .3 5m m
 
E
 
1 .3 0m m
 
1 .3 0m m
 
F
 
2 .2 0m m
 
2 .2 0m m
 
G
 
0 .0 5m m
 
0 .0 5m m
 
H
 
0 .7 5m m
 
0 .7 5m m
 
I
 
0 .8 0m m
 
0 .8 0m m
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 1 .4.4
 
MS L Le v e l
 
M oist ure Sensi ti vit y Level
 
(M SL) r elates t o t he packaging and handling precautions f or some 
semiconductor s. TheM SLisanelectr onicst andardf ort het im eper iodinwhicham oist ur esensit ive 
device can be exposed to ambient r oom condit ions ( appr oxim at ely 30°C/85%RH see J
-
STD033C 
f
or m or e inf o)  bef ore r ef low occur.
 
Pac kag e
 
L evel( d u r atio n )
 
TSOT2 3
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
WL CSP
-
8
 
Non
-
e n ca ps u l ate d d e vi ce  

not m o is tu re  se n si tiv e
 
Ref l o w p rofi le  p ea k  
te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
DFN
-
6
 
Ref l o w p rofi le  p ea k  te mp e ra tu re  <  2 60  °C f o r< 3 0 s ec o nd s
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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12
 
Datash eet an d Part
-
number I nform ation
 
1 2 .1
 
Orde ring Informa tion
 
O r der swillbesubj ectt oaMO Q(M inim umO r der Q uantity) of af ullr eel. Contactt heoff icialdist r ibut or  

www. azot eq. co
m
. 
 
For  large order s, Azoteqcan provide pre
-
conf igured devices. 
 
ThePart
-
num ber canbegener atedbyusingUSBPr og. exeor t heI nt eract ivePart Num ber gener ator 
on t he websit e. 
 
I C NAM E
 
I Q S228AS
 
=
 
I Q S228 Self  Capacit ive
 
I Q S228B
 
=
 
I Q S228 Self  
Capacit ive
 
CO NFIG URATIO N
 
zzz zzz zz
 
=
 
I C Conf igur at ion( hexadecim al)
 
PACKAG E TYPE
 
TS
 
=
 
TSO T23
-
6 package
 
C
S
 
=
 
WLCSP
-
8 package
 
DN
 
=
 
DFN
-
6 package
 
BULK PACKAG I NG
 
R
 
=
 
Reel 
 
TSO T23
-
6 andWLCSP
-
8: 
3000pcs/ r eel
 
DFN
-
6: 6000pcs/r eel
 
=
 
M OQ = 1r eel 
( or der s shipped asf ull r eels)
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .2
 
Dev ice  Ma rk ing 

T op
 
1 2 .2.1
 
T S OT2 3
-
6 P a ck a ge Ma rk ings
 
There ar e 2 m ar king versions in circulation f or I QS228AS
 
and IQ S228B
:
 
Fi g u re 
12
.
1
:
Fi rs t Ma rki n g  Va ria n t o fIQS2 2 8 AS
 
Fi g u re 
12
.
2
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 AS
 
Fi g u re 
12
.
3
: 
Fi rs t Ma rk i n g Va ria n t o fIQS2 2 8
B
 
Fi g u re 
12
.
4
: 
Sec o nd  Ma rk in g Va ri a n t o f IQS2 28 B
 
I C NAM E
 
228A
 
=
 
I Q S228AS Self Capacit ive
 
22
-
A
 
=
 
I Q S228AS Self Capacit ive
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 
t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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21
 
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1 2 .2.2
 
WLCS P
-
8  P a ck a ge Ma rk ings
 
Fi g u re 
12
.
5
 
To p Ma rk in g  o f I QS2 2 8 B W L CSP Pa ck a g e
 
I C NAM E
 
228B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA 

ZZ
 
I C VERSI O N
 
V
 
Product Code
 
PPP
 
1 2 .2.3
 
DFN
-
6  P a c ka ge  
Ma rk ings
 
Fi g u re 
12
.
6
 
IQS2 2 8 B
 
DFN
-
6  Pa c ka g e  To p  Ma rk i n g
 
I C NAM E
 
22
-
B
 
=
 
I Q S228B Self  Capacit ive
 
Batch Code
 
xx
 
=
 
AA t o ZZ
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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1 2 .3
 
T a pe  
a nd Ree l 
S pe c ific a tion
 
Fi g u re 
12
.
7
: TSOT2 3
-
6  T ap e Sp e c ifi ca ti on .
 
Ta b l e 
12
.
1
 
Ta pe  a nd  Re el  Di me n s io n s
 
Dev ic e
 
P ack age
 
Ty pe
 
P ack age
 
D ra wi ng
 
P ins
 
QTY  
per 
reel
 
Reel
 
Di a m ete r
 
(mm )
 
Reel
 
Wi dth
 
W1 (mm )
 
A0
 
(mm )
 
B0
 
(mm )
 
K0
 
(mm )
 
P1
 
(mm )
 
W
 
(mm )
 
P in1
 
Quadrant
 
I QS2
2
8
AS
z zzz zzz zTS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz TS R
 
TS OT23/ 6
 
TS OT23
-
6
 
6
 
3
000
 
17 8
 
9. 5
 
3. 1
 
3. 1
 
1. 3
 
4
 
8
 
Q
3
 
I QS22
8
Bzz zzz zzz CS R
 
WLCS P 8
 
WLCS P
-
8
 
8
 
3000
 
17 9
 
8. 4
 
1
 
1 . 5 5
 
0. 48
 
4
 
8
 
Q3
 
I QS228Bzz zzz zzz DNR
 
DFN6
 
DFN
-
6
 
6
 
6000
 
330
 
12. 4
 
2. 8
 
3. 3
 
1. 2
 
4
 
12
 
Q1
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Appendi x A.
 
Memory  Map
 
Device Inform ation
 
[ 00H]  PRO D_NR
 
The pr oduct  num berf or the IQ S228A is 39 ( decimal) .
 
[ 01H]  SW_NR
 
Thesof t war eversionnum beroft hedeviceRO Mcanber eadint hisbyte.Thelatestsof t wareversion 
is 29 ( decim al) .
 
[ 10H]  SYSFLA G S0 
 
Bit  7
-
6:  
 
SYSTEM _USE
 
Bit  5: 
 
Logic: 
LogicO utput I ndication
 
0 = Act ive Low
 
1 = Act ive High
 
Bit  4: 
 
Halt :
 
I ndicat es Filt er  Halt st at us
 
0 = LTA not  being Halt ed
 
1 = LTA Halt ed
 
Bit  3: 
 
LP:
 
Low PowerM ode
 
0 = Samplet im e BP
 
1 = Samplet im e LP
 
Bit  2: 
 
ATI:
 
St atus of  aut omat ed ATI r out ine
 
00H
 
Pro d u ct Nu mb e r ( P RO D_ NR)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
39 ( Decim al)
 
R
 
Note
 
01H
 
So f t w are Num b er ( S W_ N R)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
29 ( Decim al)
 
R
 
Note
 
10H
 
Syst em  Flag s (
Sy s_F lag s )
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
~
 
Logic
 
Halt
 
LP
 
ATI
 
ND
 
Zoom
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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0 = ATI is not busy
 
1 = ATI in progr ess
 
Bit  1: 
 
ND:
 
This bit indicatest he pr esence of noise int erf erence.
 
0 = I C has not  det ectedthe presence of  noise
 
1 = I C has det ected t hepresence of  noise
 
Bit  0: 
 
ZOOM : 
Zoom  will indicate f ull
-
speed char ging once an undebounced proxim it y is 
det ected. I n BP m ode, t his
 
will not  changet he charging fr equency.
 
0 = I C not zoom ed in
 
1 = I C det ect ed undebounced pr oxim it y andI C ischar ging at f ull
-
speed ( BP)
 
[ 31H]  St atus
 
Bit  7: 
 
Dycal:  
Dycal Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  6:2:  
 
SYSTEM _USE
 
Bit  1: 
 
Touch: 
Touch Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
Bit  0: 
 
Prox:
 
Pr oxim it y Detect ion
 
0 = Not Act ive
 
1 = Act ive
 
31H
 
St atu s
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
DYCAL
 
Touch
 
Pr oxim it y
 
R
 
Note
 
42H
 
Co u n t s_Hig h  ( CS _H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts High Byt e
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
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AS /B  Dat as heet  
 
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43H
 
Co u n t s_L o w  ( CS_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Counts Low Byt e
 
R
 
Note
 
83H
 
L T A_High  ( L T A_H)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age High Byt e
 
R
 
Note
 
84H
 
L T A_Lo w  ( L T A_L)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
Long Term  Aver age Low Byt e
 
R
 
Note
 
C4H
 
F u se Bank  0( F B_ 0)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
1
 
f or m ore details
 
R
 
Note
 
C5H
 
F u se Bank  1( F B_ 1)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
2
 
f or m ore details
 
R
 
Note
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
21
 
I QS22
8
AS /B  Dat as heet  
 
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[ C8H]  
Defaul t CommsPoint er
 
Thevaluest or edint hisregist erwillbeloadedintot heCom msPointer at t hest ar tofacom m unicat ion 
window.  For  example, if  t he design only r equir es t he Pr oxim it y St at us inf or m at ion each cycle,  t hen 
t he 
DefaultCom m sPointer
 
. Thiswouldm eant hatatt hest ar tofeach 
comm unicat ion window, t he comm s pointer would alr eady be set t o t he Pr oxim it y St at us r egist er, 
sim ply allowing a READ t or etr ieve t he dat a, wit hout t he need of set t ing up t he address.
 
C6H
 
F u se Bank  2( F B_ 2)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See
 
Table 
3
.
4
 
f or m ore details
 
R
 
Note
 
C7H
 
F u se Bank  3( F B_ 3)
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
See 
Table 
3
.
5
 
f or m ore details
 
R
 
Note
 
C8H
 
DEF AUL T _CO MM S_ PO IN T ER
 
Bit
 
7
 
6
 
5
 
4
 
3
 
2
 
1
 
0
 
Access
 
Value
 
( Beginning of Device Specif ic Data)
 
R/ W
 
Default
 
10H
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
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Appen dix B.
 
Errata
 
Filte r 
H
a lt 
T
ime s
 
W

bit isset, t hehalt t im esasspecif iedinSection 
3
 
willbescaled16xlonger,  
due t o added dead t im ewhen t heI C 
cor e is t ur ned off t or educe power  consum ption:
 
Us er Se lec tab le Conf ig urati on O pt ions : Ba nk  1 

F ul l A T I (
0x C5H
)
 
t
HA LT 1
 
t
HA LT 0
 
~
 
~
 
TURBO
 
BASE
2
 
BASE
1
 
BASE
0
 
bit  7
 
bit  0
 
Bank1: bi t 7
-
6
 
t
HAL T
:
 
Halt tim es
 
S ect ion 
7. 11
 
00 = 320s ec onds
 
01 = 640s ec onds
 
10 = Nev er
 
11 = 48s ec onds
 
IQ  Sw it ch
®
 
Pro x Sens e
®
 
S eri es
 
Copy right  ©Az ot eq (P ty ) Lt d 20
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Appendi x C.
 
Contact I nform atio n
 
V
isit  
www. azot eq. com
 
f or a list of 
dist r ibut ors and worldwide r epr esent at ion.
 
USA
 
A sia
 
Sout hA f ri ca
 
Physical 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
1 Bergsig Avenue
 
Paar l
 
7646
 
Sout h Afr ica
 
Post al 
A ddress
 
11940 Jollyville
 
Suit e 120
-
S
 
Austin
 
TX 78750
 
USA
 
Room
 
501A,
 
Block
 
A,
 
T
-
Shar e
 
I nter nat ional
 
Centr e,
 
Taoyuan
 
Road,
 
Nanshan
 
Dist r ict,
 
Shenzhen,
 
G uangdong,
 
PRC
 
PO  Box 3534
 
Paar l
 
7620
 
Sout h Afr ica
 
T el
 
+1 512 538 1995
 
+86 755 8303 5294
 
ext 808
 
+27 21 863 0033
 
Emai l
 
info@azoteq.com
 
info@azoteq.com
 
info@azoteq.com
 
P
ate nts  
as  l is ted  on  
www. a z oteq.c om /pat ents
-
tr ad ema r k s /
 
may  
r elate  to t he dev ic e or  us ag e of  the  dev ic e
.
 
Az oteq
®
,Cr y s tal Dr iv er

,IQ Sw itc h
®
,Pr ox S ens
e
®
,Pr ox F us ion
®

log o ar e tr ade mar k s  of Az o teq.
 
T h e  in fo r m atio n  in t h is Data sh e e t is b e lie ve d  to  b e a ccu r a te  a t t h e tim e o f p ub lica tio n . Azo te q  u se s r e a son a b lee ff o rt to m a
inta in th e in form a tio n  up
-
to
-
d a te a n d a ccu ra te ,b u t do e s 
n o twarr a n tth e a ccu r a cy,co m p le te n e sso rr e lia b ilityo fthe inf or m a tio n c

o r  warr a n tie s, e xpr e ss or  imp lie d , of a n y kind , inclu d ing  r e pr e se n tatio n s ab o u t th e  su ita b ility o f the se  pr o d u cts o r inf or m a t
ion  for  a n y p ur po s
e .  Azo teq  d iscla im s a ll war r a ntie s a nd 
co n d ition s with  r e g ar d  to  th e se  pr o d u cts a nd  inf o r m a tio n , inclu d ing  b u t no t lim ite d  to  a ll im plie d  war r a n tie s a nd  co n d ition s 
o f m er ch a n ta b ility,  fitn e ss fo r  a  p a r ticu lar  p u r p o se , title 
a n d  n o n
-
infr ing em e n t o f a n y th i
r d  pa r ty int e llectu a l p r o p er ty r igh ts.  Azo te q  a ssum e s n o  lia b ility fo r  a n y d a m a g e s o r  injur y a r isin g  fr om  a n y u se  o f th e  inf o
r m a tion  o r  th e  p r od u ct o r 
ca u se d  b y, with o u t lim ita tio n , fa ilu r e o f pe r form a n ce , e r r or , om issio n , inte r ru p tio n , d e fe ct, de lay in o p
e r a tio n o r tr a n sm issio n , e ve n  if Azo te q  h a s b e e n  a d vised  o f th e p o ssibility of 
su ch  d a m a ge s. T h e  ap p lica tio n s m en tio n e d  he r e in a r e  u se d  so lely fo r  the  p u r po se  o f illustr a tio n  a n d  Azo teq  m a ke s n o  war r a n ty 
o r  r e pre se n ta tio n  tha t su ch  a p p lica tio n s will b e 
su i
ta b le with o u t fur th er  m o d ificatio n , n or  r e com m e n d s th e  u se  o f its pr o d u ctsfo r  a pp lica tio n t h a t m a y pr e se n t a r isk to  h um a n  l
ife  d ue  t o m a lfu n ctio n  or  o th er wise . Azo te q  pr o d u cts 
a r e  n o t au th o r ized  fo r  u se  a s cr itical com p o ne n ts in life  su p p or t d e vices or  s
yste m s. No  lice n se s to  p a te n ts a re  g r a nte d , im p licitly, e xp re ss o r  im p lie d , b y e sto p pe l o r  o the r wise, 
u n d e r a n y inte lle ctu a l p r o pe r ty r igh ts.  In th e e ve n t tha t a n y o f th e  a b o vem e n tio n ed  lim ita tio n s o r e xclusio n s d o e s n o t a p p ly
 
to ta l lia b ility fo r  a ll losse s, 
d a m a g e s an d  ca u se s o f a ction  ( in co n tr a ct,  to r t ( inclu d ing  witho u t lim ita tio n , ne g lig e n ce)  or  o th e r wise)  will n o t e xce e d  th e  
am o u n t a lre ad y p a id b y th e  cu sto me r  fo r  th e  p r od u cts.  
Azo te q  r e se r ve s the  r igh t to  a lter  its p r o d u
cts, to  m a ke  co r r e ctio n s, d e let ion s, m o d ificat ion s, e n h a n ce m en ts,  im p ro ve m en ts a n d  o th er  ch an g e s to  th e  co n ten t a n d  inf o rm a ti
o n, its 
p r o d u cts, p ro g r am s an d  ser vices a t an y time  o r  to m o ve  or  d iscon tin u e a n y co n te nts,  pr o d ucts,  p r og r am s or  ser vices with ou t 
pr ior n o tificatio n . Fo r  t h e  m o st u p
-
to
-
d ate  info r m ation 
a n d  b ind ing T er m s a nd  Co n d ition sp lea se r e fer  t o
 
www.a zo teq .co m
.
 
i nfo@azoteq. com
 
",Description about the component,op ti on a l for a d d ed  RF i mmu n i ty .