Robustness of the Verwey transition against remanent strain-induced defects in magnetite

The Verwey transition in magnetite is a benchmark electronically driven phase transition that is highly sensitive to lattice imperfections and external perturbations. Doping, deviations from oxygen stoichiometry, and irradiation-induced point defects are known to lower the Verwey transition temperature, T_{rm V}. By contrast, the role of remanent strain fields and extended defect structures generated by uniaxial stress has remained largely unexplored. Here we combine dark-field x-ray microscopy (DFXM) and ac magnetic susceptibility to determine how strain-induced defects affect the Verwey transition in stoichiometric single-crystalline magnetite after uniaxial compression and unloading. The DFXM measurements were performed on two samples compressed along the same [011] direction: loading to 200~MPa generated stable line-like defects and remanent strain fields, whereas loading beyond the fracture threshold produced denser defect networks and mechanical fracture. To test the effect of a different loading geometry, we also measured the ac susceptibility of a sample fractured by compression along [001]. Real-space DFXM imaging, lattice-orientation mapping, and residual strain mapping show substantial remanent structural disorder after compression. Nevertheless, neither the transition temperature T_{rm V} nor the sharpness of the transition changes measurably in any of the compressed or fractured samples. This behavior contrasts with the strong suppression of T_{rm V} by point-like disorder. Our results show that extended line-like defects and remanent strain fields produced by plastic deformation do not measurably perturb the macroscopic electronic ordering responsible for the Verwey transition, thereby distinguishing the effects of point defects from those of extended slip-related defects in magnetite.