Daily Papers

Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology.

We present the technical specifications and first results of the ESA-funded, lunar monitoring project "NELIOTA" (NEO Lunar Impacts and Optical TrAnsients) at the National Observatory of Athens, which aims to determine the size-frequency distribution of small Near-Earth Objects (NEOs) via detection of impact flashes on the surface of the Moon. For the purposes of this project a twin camera instrument was specially designed and installed at the 1.2 m Kryoneri telescope utilizing the fast-frame capabilities of scientific Complementary Metal-Oxide Semiconductor detectors (sCMOS). The system provides a wide field-of-view (17.0' times 14.4') and simultaneous observations in two photometric bands (R and I), reaching limiting magnitudes of 18.7 mag in 10 sec in both bands at a 2.5 signal-to-noise level. This makes it a unique instrument that can be used for the detection of NEO impacts on the Moon, as well as for any astronomy projects that demand high-cadence multicolor observations. The wide field-of-view ensures that a large portion of the Moon is observed, while the simultaneous, high-cadence, monitoring in two photometric bands makes possible, for the first time, the determination of the temperatures of the impacts on the Moon's surface and the validation of the impact flashes from a single site. Considering the varying background level on the Moon's surface we demonstrate that the NELIOTA system can detect NEO impact flashes at a 2.5 signal-to-noise level of ~12.4 mag in the I-band and R-band for observations made at low lunar phases ~0.1. We report 31 NEO impact flashes detected during the first year of the NELIOTA campaign. The faintest flash was at 11.24 mag in the R-band (about two magnitudes fainter than ever observed before) at lunar phase 0.32. Our observations suggest a detection rate of 1.96 times 10^{-7} events km^{-2} h^{-1}.

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.

Polar metals are an underexplored material class combining two properties that are typically incompatible, namely a polar crystal structure and reasonable electrical conductivity. These intriguing materials offer a unique combination of properties, potentially relevant to optoelectronics, catalysis, memory devices, among other applications. The distortive polar metal (DPM) subclass forms through a symmetry-lifting phase transformation into a non-centrosymmetric polar crystal structure. In the process, domains with uniform geometric polar directions form, oftentimes separated by domain boundaries with polarity discontinuities arranged in "charged" head-to-head (H-H) or tail-to-tail (T-T) morphologies. To date, only metallic oxide DPM microstructures have been studied. Here we reveal, in the intermetallic DPM Mn_{5}Al_{8}, different surface interactions and electron transfer reactivity at domain boundaries depending on their H-H or T-T character. Variable surface reactivity suggests localized changes in electronic work functions due to an increase (H-H) or decrease (T-T) in the electronic density of states. These findings suggest that metallic DPMs may offer functionalizable domain boundaries and deserve increased attention, given that they allow tunable chemistries and various thermomechanical processing or transformation protocols. Ultimately, this study proposes unconventional metal physics, propelling the discovery and design of advanced electronic materials and devices.

Hybrid superconductor-semiconductor systems have received a great deal of attention in the last few years because of their potential for quantum engineering, including novel qubits and topological devices. The proximity effect, the process by which the semiconductor inherits superconducting correlations, is an essential physical mechanism of such hybrids. Recent experiments have demonstrated the proximity effect in hole-based semiconductors, but, in contrast to electrons, the precise mechanism by which the hole bands acquire superconducting correlations remains an open question. In addition, hole spins exhibit a complex strong spin-orbit interaction, with largely anisotropic responses to electric and magnetic fields, further motivating the importance of understanding the interplay between such effects and the proximity effect. In this work, we analyze this physics with focus on germanium-based two-dimensional gases. Specifically, we develop an effective theory supported by full numerics, allowing us to extract various analytical expressions and predict different types of superconducting correlations including non-standard forms of singlet and triplet pairing mechanisms with non-trivial momentum dependence; as well as different Zeeman and Rashba spin-orbit contributions. This, together with their precise dependence on electric and magnetic fields, allows us to make specific experimental predictions, including the emergence of f-type superconductivity, Bogoliubov Fermi surfaces, and gapless regimes caused by large in-plane magnetic fields.

This paper explores the potential of cryogenic semiconductor computing and superconductor electronics as promising alternatives to traditional semiconductor devices. As semiconductor devices face challenges such as increased leakage currents and reduced performance at higher temperatures, these novel technologies offer high performance and low power computation. Conventional semiconductor electronics operating at cryogenic temperatures (below -150{\deg}C or 123.15 K) can benefit from reduced leakage currents and improved electron mobility. On the other hand, superconductor electronics, operating below 10 K, allow electrons to flow without resistance, offering the potential for ultra-low-power, high-speed computation. This study presents a comprehensive performance modeling and analysis of these technologies and provides insights into their potential benefits and limitations. We implement models of in-order and out-of-order cores operating at high clock frequencies associated with superconductor electronics and cryogenic semiconductor computing in gem5. We evaluate the performance of these components using workloads representative of real-world applications like NPB, SPEC CPU2006, and GAPBS. Our results show the potential speedups achievable by these components and the limitations posed by cache bandwidth. This work provides valuable insights into the performance implications and design trade-offs associated with cryogenic and superconductor technologies, laying the foundation for future research in this field using gem5.

CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications.

We present an extension and comprehensive real-world validation of Co-Scientist, a Gemini-based multi-agent system designed to accelerate end-to-end scientific research across hypothesis generation, experimentation, and manuscript generation. Moving beyond in silico hypothesis generation, this specialized configuration transitions Co-Scientist into an execution-grounded research partner advancing closed-loop scientific workflows across materials science, biology, and computer science. In materials science, Co-Scientist interfaced with a semi-automated chemical vapor deposition reactor to design a safe precursor route for MXenes; experimental execution produced a lamellar 2D material sharing key structural similarities with the Ti3C2Tx MXene lattice, although further experiments are needed to confirm the atomic structure. Leveraging Gemini 3 Deep Think for rapid, lab-in-the-loop execution, it also tailored growth recipes to laboratory constraints in minutes, enabling single-attempt growth of monolayer MoS2, MoSe2, and WS2 semiconductors. In biology, Co-Scientist predicted emergent swarming phenotypes of engineered E. coli across inducer (IPTG) gradients from sparse imaging data, quantitatively matching unpublished wet-lab morphological measurements. In computer science, Co-Scientist autonomously discovered an inference-time scaling architecture that outperformed six frontier models on HealthBench (Hard and Professional) while reducing potential clinical harm under blinded physician evaluation. Finally, a double-blind study of end-to-end generated papers with 30 domain experts across 450 reviews demonstrates that Co-Scientist's reliability modules reduce hallucination and plagiarism while improving research safety. Together, these results demonstrate progress toward closed-loop multi-agent scientific AI systems capable of accelerating real-world scientific discovery.

Perovskite solar cells (PSCs) have rapidly emerged as a leading contender in next-generation photovoltaic technologies, owing to their exceptional power conversion efficiencies and advantageous material properties. Despite these advances, challenges such as long-term stability, environmental sustainability, and scalable manufacturing continue to hinder their commercialization. Precursor additive engineering has shown promise in addressing these issues by enhancing both the performance and durability of PSCs. However, the explosive growth of scientific literature and the complex interplay of materials, processes, and device architectures make it increasingly difficult for researchers to efficiently access, organize, and utilize domain knowledge in this rapidly evolving field. To address this gap, we introduce Perovskite-R1, a specialized large language model (LLM) with advanced reasoning capabilities tailored for the discovery and design of PSC precursor additives. By systematically mining and curating 1,232 high-quality scientific publications and integrating a comprehensive library of 33,269 candidate materials, we constructed a domain-specific instruction-tuning dataset using automated question-answer generation and chain-of-thought reasoning. Fine-tuning the QwQ-32B model on this dataset resulted in Perovskite-R1, which can intelligently synthesize literature insights and generate innovative and practical solutions for defect passivation and the selection of precursor additives. Experimental validation of several model-proposed strategies confirms their effectiveness in improving material stability and performance. Our work demonstrates the potential of domain-adapted LLMs in accelerating materials discovery and provides a closed-loop framework for intelligent, data-driven advancements in perovskite photovoltaic research.

Coupling together distinct correlated and topologically non-trivial electronic phases of matter can potentially induce novel electronic orders and phase transitions among them. Transition metal dichalcogenide compounds serve as a bedrock for exploration of such hybrid systems. They host a variety of exotic electronic phases and their Van der Waals nature enables to admix them, either by exfoliation and stacking or by stoichiometric growth, and thereby induce novel correlated complexes. Here we investigate the compound 4Hb-TaS_2 that interleaves the Mott-insulating state of 1T-TaS_2 and the putative spin liquid it hosts together with the metallic state of 2H-TaS_2 and the low temperature superconducting phase it harbors. We reveal a thermodynamic phase diagram that hosts a first order quantum phase transition between a correlated Kondo cluster state and a flat band state in which the Kondo cluster becomes depleted. We demonstrate that this intrinsic transition can be induced by an electric field and temperature as well as by manipulation of the interlayer coupling with the probe tip, hence allowing to reversibly toggle between the Kondo cluster and the flat band states. The phase transition is manifested by a discontinuous change of the complete electronic spectrum accompanied by hysteresis and low frequency noise. We find that the shape of the transition line in the phase diagram is determined by the local compressibility and the entropy of the two electronic states. Our findings set such heterogeneous structures as an exciting platform for systematic investigation and manipulation of Mott-metal transitions and strongly correlated phases and quantum phase transitions therein.

We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from electroluminescent diodes, such a photoluminescence field effect transistor uses the gate electric field to electrostatically modulate the interfacial density of mobile charges, thereby affecting the radiative and nonradiative recombination channels of photocarriers. Varying the gate voltage in such transistors efficiently changes the rate of nonradiative interfacial recombination and modulates the photoluminescence intensity by 65 to 98 percent (depending on temperature). At favorable gating, nearly complete elimination of non-radiative losses can be achieved. This functionality, coupled with the strong visible-range absorption and emission, possible due to the high absorption coefficient, as well as controllable thickness and macroscopically homogeneous morphology of epitaxial perovskite films, leads to high external photoluminescence quantum efficiencies realized in large-area, thin-film devices. Such high-efficiency, scalable, electrostatically tunable optoelectronic switches broaden the potential applications of metal-halide perovskites in photonics and optoelectronics.

In 2021 Nature Physics published a paper by Vaitiekenas, Liu, Krogstrup and Marcus titled "Zero-bias peaks at zero magnetic field in ferromagnetic hybrid nanowires". The paper reports low temperature transport measurements on semiconductor InAs nanowires with two partly overlapping shells -- a shell of EuS, a magnetic insulator, and a shell of Al, a metal that becomes superconducting at temperatures below 1.2K. The paper claims that (1) the data are consistent with induced topological superconductivity and Majorana zero modes (MZMs), and (2) that this is facilitated by the breaking of the time reversal symmetry through a direct magnetic interaction with the EuS shell. In this Matters Arising, we present an alternative explanation which is based on trivial effects that are likely to appear in the reported geometry. Specifically, first, we find that data the authors present in support of the topological superconductivity claim can originate from unintended quantum dots in their devices, a widely known likely explanation that is not being discussed in the paper. Second, our analysis of the setup, supported by our numerical micromagnetic simulations, shows similar effects could be obtained due to stray magnetic fields from the region of the EuS shell damaged during Al etching. This basic picture should come before the exotic interpretation in terms of magnetic exchange interaction with a ferromagnetic insulator.

Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric materials and Si is still challenging, while the fundamental understanding of the ferroelectric switching process is still lacking. Herein, we have successfully synthesized the imidazole perchlorate (ImClO4) single crystals and a series of high-quality highly-oriented thin films on a Si substrate. A high inverse piezoelectric coefficient (55.7 pm/V) is demonstrated for the thin films. Two types of domain bands can be observed (in the size of a few microns): type-I band tilts ~60{\deg} with respect to the horizontal axis, while the type-II band is perpendicular to the horizontal axis. Most of the domain walls (DWs) are 180{\deg} DWs for the two bands, while some 109{\deg} DWs can also be observed. Interestingly, the DWs in type-I band are curved, charged domain walls; while the 180{\deg} DWs in type-II band are straight, noncharged domain walls. After applying +20 V for 5 s through a PFM tip, the 180{\deg} DWs in type-I band shrink first, then disconnect from the band boundary, forming a needle-like domain with a size of ~100 nm. The needle-like domain will extend toward the band boundary after an inverse bias is applied (-20 V), and expand along the band boundary after touching the boundary. Whereas for the type-II domain band, the 180{\deg} DWs are more mobile than the 109{\deg} domain walls, which displaces ~500 nm after applying +20 V. While such displacement is much shorter after the application of a negative bias for the same duration, starting from the positively poled sample. We hope to spur further interest in the on-chip design of the molecular ferroelectrics based electronic devices.

Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin-orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization, but can also overcome their various limitations. In proximitized materials it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the focus is on magnetic and spin-orbit proximity effects with their applications in spintronics, the outlined principles provide also a broader framework for employing other proximity effects to tailor materials and realize novel phenomena.

The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nanoelectronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.

We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimensional (2D) transistors from electrical measurements, enabling automated parameter extraction and technology computer-aided design (TCAD) fitting. To facilitate this task, we implement a simple data augmentation and pre-training approach by training a secondary neural network to approximate a physics-based device simulator. This method enables high-quality fits after training the neural network on electrical data generated from physics-based simulations of ~500 devices, a factor >40times fewer than other recent efforts. Consequently, fitting can be achieved by training on physically rigorous TCAD models, including complex geometry, self-consistent transport, and electrostatic effects, and is not limited to computationally inexpensive compact models. We apply our approach to reverse-engineer key parameters from experimental monolayer WS_2 transistors, achieving a median coefficient of determination (R^2) = 0.99 when fitting measured electrical data. We also demonstrate that this approach generalizes and scales well by reverse-engineering electrical data on high-electron-mobility transistors while fitting 35 parameters simultaneously. To facilitate future research on deep learning approaches for inverse transistor design, we have published our code and sample data sets online.

Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive index appearing in small gap materials and vice-versa. Here, we conduct a first-principles high-throughput study on more than 4000 semiconductors (with a special focus on oxides). Our data confirm the general inverse trend between refractive index and band gap but interesting outliers are also identified. The data are then analyzed through a simple model involving two main descriptors: the average optical gap and the effective frequency. The former can be determined directly from the electronic structure of the compounds, but the latter cannot. This calls for further analysis in order to obtain a predictive model. Nonetheless, it turns out that the negative effect of a large band gap on the refractive index can counterbalanced in two ways: (i) by limiting the difference between the direct band gap and the average optical gap which can be realized by a narrow distribution in energy of the optical transitions and (ii) by increasing the effective frequency which can be achieved through either a high number of transitions from the top of the valence band to the bottom of the conduction or a high average probability for these transitions. Focusing on oxides, we use our data to investigate how the chemistry influences this inverse relationship and rationalize why certain classes of materials would perform better. Our findings can be used to search for new compounds in many optical applications both in the linear and non-linear regime (waveguides, optical modulators, laser, frequency converter, etc.).

Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick Al oxide layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. This allows us to make multiple tunnel probes along single nanowire hybrids and to successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids.

The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a thorough understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer length scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices for low- and high-end technology applications.

Energy efficiency of Convolutional Neural Networks (CNNs) has become an important area of research, with various strategies being developed to minimize the power consumption of these models. Previous efforts, including techniques like model pruning, quantization, and hardware optimization, have made significant strides in this direction. However, there remains a need for more effective on device AI solutions that balance energy efficiency with model performance. In this paper, we propose a novel approach to reduce the energy requirements of inference of CNNs. Our methodology employs two small Complementary CNNs that collaborate with each other by covering each other's "weaknesses" in predictions. If the confidence for a prediction of the first CNN is considered low, the second CNN is invoked with the aim of producing a higher confidence prediction. This dual-CNN setup significantly reduces energy consumption compared to using a single large deep CNN. Additionally, we propose a memory component that retains previous classifications for identical inputs, bypassing the need to re-invoke the CNNs for the same input, further saving energy. Our experiments on a Jetson Nano computer demonstrate an energy reduction of up to 85.8% achieved on modified datasets where each sample was duplicated once. These findings indicate that leveraging a complementary CNN pair along with a memory component effectively reduces inference energy while maintaining high accuracy.

In this study, the spin-orbit torque (SOT) in light metal oxide systems is investigated using an experimental approach based on harmonic Hall voltage techniques in out-of-plane (OOP) angular geometry for samples with in-plane magnetic anisotropy. In parallel, an analytical derivation of this alternative OOP harmonic Hall detection geometry has been developed, followed by experimental validation to extract SOT effective fields. In addition, to accurately quantifying SOT, this method allows complete characterization of thermoelectric effects, opening promising avenues for accurate SOT characterization in related systems. In particular, this study corroborates the critical role of naturally oxidized copper interfaced with metallic Cu in the generation of orbital current in Co(2)|Pt(4)|CuOx(3), demonstrating a two-fold increase in damping-like torques compared to a reference sample with an oxidized Al capping layer. These findings offer promising directions for future research on the application aspect of non-equilibrium orbital angular momentum.

In this paper, we describe a design of a mixed signal circuit for a binary neuron (a.k.a perceptron, threshold logic gate) and a methodology for automatically embedding such cells in ASICs. The binary neuron, referred to as an FTL (flash threshold logic) uses floating gate or flash transistors whose threshold voltages serve as a proxy for the weights of the neuron. Algorithms for mapping the weights to the flash transistor threshold voltages are presented. The threshold voltages are determined to maximize both the robustness of the cell and its speed. The performance, power, and area of a single FTL cell are shown to be significantly smaller (79.4%), consume less power (61.6%), and operate faster (40.3%) compared to conventional CMOS logic equivalents. Also included are the architecture and the algorithms to program the flash devices of an FTL. The FTL cells are implemented as standard cells, and are designed to allow commercial synthesis and P&R tools to automatically use them in synthesis of ASICs. Substantial reductions in area and power without sacrificing performance are demonstrated on several ASIC benchmarks by the automatic embedding of FTL cells. The paper also demonstrates how FTL cells can be used for fixing timing errors after fabrication.

The stacking-dependent polarization and excitonic response of MoS_2/MoSe_2 heterostructures were investigated using GW+BSE many-body perturbation theory. While homobilayer MoS_2 exhibited a switchable interlayer dipole driven by registry-induced symmetry breaking, the MoS_2/MoSe_2 hetero-interface remained pinned by the intrinsic chemical potential mismatch between sulfur and selenium. In 2L-MoS_2/MoSe_2 trilayers, the stacking sequence enabled a deterministic control of photogenerated electrons between the central and bottom MoS_2 layers, governed by internal electric fields and quasiparticle band-edge shifts of 60--70~meV. Our calculations predicted a 36~meV interlayer excitonic shift, in remarkable agreement with recent experiments. These results elucidate the microscopic link between atomic registry and many-body interactions, establishing transition metal dichalcogenide trilayers as a potential platform for sliding ferroelectricity and programmable optoelectronic functionalities.

We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional theory and non-equilibrium Green's function, we assess how stacking configurations and material thickness impact important properties, such as density of states, potential barriers and conductivity. For monolayers, strong orbital hybridization with the metallic electrodes significantly alters the electronic characteristics, with the formation of states within the gap of the semiconducting 2D materials. Trilayers reveal the critical role of interlayer coupling, where the middle layer retains its intrinsic properties, thus influencing the overall conductivity. Our findings highlight the potential for customized multilayer designs to optimize electronic device performance based on two-dimensional materials.

Conventional semiconductor-based integrated circuits are gradually approaching fundamental scaling limits. Many prospective solutions have recently emerged to supplement or replace both the technology on which basic devices are built and the architecture of data processing. Neuromorphic circuits are a promising approach to computing where techniques used by the brain to achieve high efficiency are exploited. Many existing neuromorphic circuits rely on unconventional and useful properties of novel technologies to better mimic the operation of the brain. One such technology is single flux quantum (SFQ) logic -- a cryogenic superconductive technology in which the data are represented by quanta of magnetic flux (fluxons) produced and processed by Josephson junctions embedded within inductive loops. The movement of a fluxon within a circuit produces a quantized voltage pulse (SFQ pulse), resembling a neuronal spiking event. These circuits routinely operate at clock frequencies of tens to hundreds of gigahertz, making SFQ a natural technology for processing high frequency pulse trains. Prior proposals for SFQ neural networks often require energy-expensive fluxon conversions, involve heterogeneous technologies, or exclusively focus on device level behavior. In this paper, a design methodology for deep single flux quantum neuromorphic networks is presented. Synaptic and neuronal circuits based on SFQ technology are presented and characterized. Based on these primitives, a deep neuromorphic XOR network is evaluated as a case study, both at the architectural and circuit levels, achieving wide classification margins. The proposed methodology does not employ unconventional superconductive devices or semiconductor transistors. The resulting networks are tunable by an external current, making this proposed system an effective approach for scalable cryogenic neuromorphic computing.

The key challenge in advancing multivalent-ion batteries lies in finding suitable intercalation hosts. Open-tunnel oxides, featuring one-dimensional channels or nanopores, show promise for enabling effective ion transport. However, the vast range of compositional possibilities renders traditional experimental and quantum-based methods impractical for large-scale studies. This work presents a generative AI framework that uses the Crystal Diffusion Variational Autoencoder (CDVAE) and a fine-tuned Large Language Model (LLM) to expedite the discovery of stable open-tunneled oxide materials for multivalent-ion batteries. By combining machine learning with data mining techniques, five promising transition metal oxide (TMO) structures are generated. These structures, known for forming open-tunnel oxide frameworks, are structurally validated through Density Functional Theory (DFT). The results show that the generated structures have lower formation energies compared to similar compositions in the Materials Project (MP) database, indicating improved thermodynamic stability. Additionally, the graph-based M3GNet model is employed to relax further generated structures, providing a more computationally efficient alternative to DFT. Machine learning-based predictions of formation energy, band gap, and energy above the hull refine the selection process, leading to the identification of materials with significant potential for real-world battery applications. This research demonstrates the power of generative AI in rapidly exploring the vast chemical space of TMOs, offering a new approach to discovering stable open-tunnel oxides for multivalent-ion batteries. The results highlight the potential of this approach to contribute to more sustainable energy storage technologies, addressing the growing concerns surrounding the scarcity of lithium.

In the context of quantum thermodynamics, quantum batteries have emerged as promising devices for energy storage and manipulation. Over the past decade, substantial progress has been made in understanding the fundamental properties of quantum batteries, with several experimental implementations showing great promise. This Perspective provides an overview of the solid-state materials platforms that could lead to fully operational quantum batteries. After briefly introducing the basic features of quantum batteries, we discuss organic microcavities, where superextensive charging has already been demonstrated experimentally. We then explore other materials, including inorganic nanostructures (such as quantum wells and dots), perovskite systems, and (normal and high-temperature) superconductors. Key achievements in these areas, relevant to the experimental realization of quantum batteries, are highlighted. We also address challenges and future research directions. Despite their enormous potential for energy storage devices, research into advanced materials for quantum batteries is still in its infancy. This paper aims to stimulate interdisciplinarity and convergence among different materials science research communities to accelerate the development of new materials and device architectures for quantum batteries.

High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of PtSe_2. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths gtrsim 4.5,T are found to occur exclusively in plane and emerge at a layer thickness of approx 18,nm, increasing in amplitude and decreasing in frequency for thinner PtSe_2 flakes. Moreover, the quantum transport time, Berry phase, Dingle temperature and cyclotron mass of the charge carriers are ascertained. The emergence of weak antilocalization (WAL) lies in contrast to the presence of magnetic moments from Pt vacancies. An explanation is provided on how WAL and the Kondo effect can be observed within the same material. Detailed information about the charge carriers and transport phenomena in PtSe_2 is obtained, which is relevant for the design of prospective spintronic and orbitronic devices and for the realization of orbital Hall effect-based architectures.

Efficient discovery of precursor additives is essential for improving the performance of perovskite solar cells, yet the large chemical space makes conventional trial-and-error screening inefficient. We develop LEAP(LLM-driven Exploration via Active Learning for Perovskites), an expert-in-the-loop closed framework that couples a domain-specialized large language model(LLM) with active learning for iterative additive prioritization. The LLM is trained to extract mechanism-relevant knowledge from the perovskite additive literature and to represent candidate molecules through interpretable descriptors, which are further integrated into a Bayesian optimization workflow for uncertainty-aware prioritization under low-data conditions. Benchmark results on unseen literature show that the domain-specialized model outperforms general-purpose models in mechanism-consistent reasoning. Experimental validation in an expert-in-the-loop proof-of-concept study suggests improved additive prioritization across three screening rounds, leading to average device PCEs of 20.13% and 20.87% for the later-round 6-CDQ- and 2-CNA-treated devices, respectively, compared with 19.25% for the control, with a champion PCE of 21.32%. These results provide preliminary evidence that literature-grounded mechanistic descriptors, when coupled with Bayesian optimization and expert feasibility review, can support mechanism-aware additive prioritization in perovskite photovoltaics.

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.

In complex oxide materials, changes in electronic properties are often associated with changes in crystal structure, raising the question of the relative roles of the electronic and lattice effects in driving the metal-insulator transition. This paper presents a combined theoretical and experimental analysis of the dependence of the metal-insulator transition of NdNiO_3 on crystal structure, specifically comparing properties of bulk materials to one and two layer samples of NdNiO_3 grown between multiple electronically inert NdAlO_3 counterlayers in a superlattice. The comparison amplifies and validates a theoretical approach developed in previous papers and disentangles the electronic and lattice contributions, through an independent variation of each. In bulk NdNiO_3 the correlations are not strong enough to drive a metal-insulator transition by themselves: a lattice distortion is required. Ultra-thin films exhibit two additional electronic effects and one lattice-related effect. The electronic effects are quantum confinement, leading to dimensional reduction of the electronic Hamiltonian, and an increase in electronic bandwidth due to counterlayer induced bond angle changes. We find that the confinement effect is much more important. The lattice effect is an increase in stiffness due to the cost of propagation of the lattice disproportionation into the confining material.

Hexagonal oxide perovskites, in contrast to the more familiar perovskites, allow for face-sharing of metal-oxygen octahedra or trigonal prisms within their structural frameworks. This results in dimers, trimers, tetramers, or longer fragments of chains of face-sharing octahedra in the crystal structures, and consequently in much shorter metal-metal distances and lower metal-oxygen-metal bond angles than are seen in the more familiar perovskites. The presence of the face-sharing octahedra can have a dramatic impact on magnetic properties of these compounds, and dimer-based materials, in particular, have been the subjects of many quantum-materials-directed studies in materials physics. Hexagonal oxide perovskites are of contemporary interest due to their potential for geometrical frustration of the ordering of magnetic moments or orbital occupancies at low temperatures, which is especially relevant to their significance as quantum materials. As such, several hexagonal oxide perovskites have been identified as potential candidates for hosting the quantum spin liquid state at low temperatures. In our view, hexagonal oxide perovskites are fertile ground for finding new quantum materials. This review briefly describes the solid state chemistry of many of these materials.

This work presents a novel monolithic 3D (M3D) FPGA architecture that leverages stackable back-end-of-line (BEOL) transistors to implement configuration memory and pass gates, significantly improving area, latency, and power efficiency. By integrating n-type (W-doped In_2O_3) and p-type (SnO) amorphous oxide semiconductor (AOS) transistors in the BEOL, Si SRAM configuration bits are substituted with a less leaky equivalent that can be programmed at logic-compatible voltages. BEOL-compatible AOS transistors are currently under extensive research and development in the device community, with investment by leading foundries, from which reported data is used to develop robust physics-based models in TCAD that enable circuit design. The use of AOS pass gates reduces the overhead of reconfigurable circuits by mapping FPGA switch block (SB) and connection block (CB) matrices above configurable logic blocks (CLBs), thereby increasing the proximity of logic elements and reducing latency. By interfacing with the latest Verilog-to-Routing (VTR) suite, an AOS-based M3D FPGA design implemented in 7 nm technology is demonstrated with 3.4x lower area-time squared product (AT^2), 27% lower critical path latency, and 26% lower reconfigurable routing block power on benchmarks including hyperdimensional computing and large language models (LLMs).

Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling. Thus far, atomically-thin p-n junctions, metal-semiconductor contacts, and metal-insulator barriers have been demonstrated. While 2D materials achieve the thinnest possible devices, precise nanoscale control over the lateral dimensions is also necessary. Here, we report the direct synthesis of sub-nanometer-wide 1D MoS2 channels embedded within WSe2 monolayers, using a dislocation-catalyzed approach. The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent interface with the embedding 2D matrix. Periodic dislocation arrays produce 2D superlattices of coherent MoS2 1D channels in WSe2. Using molecular dynamics simulations, we have identified other combinations of 2D materials where 1D channels can also be formed. The electronic band structure of these 1D channels offer the promise of carrier confinement in a direct-gap material and charge separation needed to access the ultimate length scales necessary for future electronic applications.

Mo2P as a new member of the advancing two-dimensional (2D) materials family has been theoretically identified in this study. We conducted extensive density functional theory calculations to explore the crystal structure, dynamical stability, mechanical response, electronic structure and optical properties. Mo2P was found to be metallic with the Fermi energy locating at the d bands of transition metal Mo. A high reflectivity of ~100% at low energies less than 1 eV was observed, introducing Mo2P as a potential candidate for photonic and optoelectronic applications such as transmitting electromagnetic waves devices. Our calculations confirm that the novel 2D structure is dynamically stable and can withstand at high temperatures including 1000 K. Mo2P was found to yield high tensile strength and elastic modulus of 12 GPa.nm and 56 GPa.nm, respectively. We particularly evaluated the application of Mo2P as an anode material for Li and Na-ion rechargeable batteries.

Two critical limitations of organic-inorganic lead halide perovskite materials for solar cells are their poor stability in humid environments and inclusion of toxic lead. In this study, high-throughput density functional theory (DFT) methods are used to computationally model and screen 1845 halide perovskites in search of new materials without these limitations that are promising for solar cell applications. This study focuses on finding materials that are comprised of nontoxic elements, stable in a humid operating environment, and have an optimal bandgap for one of single junction, tandem Si-perovskite, or quantum dot-based solar cells. Single junction materials are also screened on predicted single junction photovoltaic (PV) efficiencies exceeding 22.7%, which is the current highest reported PV efficiency for halide perovskites. Generally, these methods qualitatively reproduce the properties of known promising nontoxic halide perovskites that have either been experimentally evaluated or predicted from theory. From a set of 1845 materials, 15 materials pass all screening criteria for single junction cell applications, 13 of which have not been previously investigated, such as (CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3, ((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3. These materials, together with others predicted in this study, may be promising candidate materials for stable, highly efficient, and non-toxic perovskite-based solar cells.

Machine learning, particularly in the form of deep learning, has driven most of the recent fundamental developments in artificial intelligence. Deep learning is based on computational models that are, to a certain extent, bio-inspired, as they rely on networks of connected simple computing units operating in parallel. Deep learning has been successfully applied in areas such as object/pattern recognition, speech and natural language processing, self-driving vehicles, intelligent self-diagnostics tools, autonomous robots, knowledgeable personal assistants, and monitoring. These successes have been mostly supported by three factors: availability of vast amounts of data, continuous growth in computing power, and algorithmic innovations. The approaching demise of Moore's law, and the consequent expected modest improvements in computing power that can be achieved by scaling, raise the question of whether the described progress will be slowed or halted due to hardware limitations. This paper reviews the case for a novel beyond CMOS hardware technology, memristors, as a potential solution for the implementation of power-efficient in-memory computing, deep learning accelerators, and spiking neural networks. Central themes are the reliance on non-von-Neumann computing architectures and the need for developing tailored learning and inference algorithms. To argue that lessons from biology can be useful in providing directions for further progress in artificial intelligence, we briefly discuss an example based reservoir computing. We conclude the review by speculating on the big picture view of future neuromorphic and brain-inspired computing systems.

The rapid advancement of Large Language Models (LLMs) has established language as a core general-purpose cognitive substrate, driving the demand for specialized Language Processing Units (LPUs) tailored for LLM inference. To overcome the growing energy consumption of LLM inference systems, this paper proposes a Hardwired-Neurons Language Processing Unit (HNLPU), which physically hardwires LLM weight parameters into the computational fabric, achieving several orders of magnitude computational efficiency improvement by extreme specialization. However, a significant challenge still lies in the scale of modern LLMs. An ideal estimation on hardwiring gpt-oss 120 B requires fabricating at least 6 billion dollars of photomask sets, rendering the straightforward solution economically impractical. Addressing this challenge, we propose the novel Metal-Embedding methodology. Instead of embedding weights in a 2D grid of silicon device cells, Metal-Embedding embeds weight parameters into the 3D topology of metal wires. This brings two benefits: (1) a 15x increase in density, and (2) 60 out of 70 layers of photomasks are made homogeneous across chips, including all EUV photomasks. In total, Metal-Embedding reduced the photomask cost by 112x, bringing the Non-Recurring Engineering (NRE) cost of HNLPU into an economically viable range. Experimental results show that HNLPU achieved 249,960 tokens/s (5,555x/85x of GPU/WSE), 36 tokens/J (1,047x/283x of GPU/WSE), 13,232 mm2 total die area (29% inscribed rectangular area in a 300 mm wafer), \$184M estimated NRE at 5 nm technology. Analysis shows that HNLPU achieved 8.57x cost-effectiveness and 230x carbon footprint reduction compared to H100 clusters, under an annual weight updating assumption.

This paper presents TULIP, a new architecture for a binary neural network (BNN) that uses an optimal schedule for executing the operations of an arbitrary BNN. It was constructed with the goal of maximizing energy efficiency per classification. At the top-level, TULIP consists of a collection of unique processing elements (TULIP-PEs) that are organized in a SIMD fashion. Each TULIP-PE consists of a small network of binary neurons, and a small amount of local memory per neuron. The unique aspect of the binary neuron is that it is implemented as a mixed-signal circuit that natively performs the inner-product and thresholding operation of an artificial binary neuron. Moreover, the binary neuron, which is implemented as a single CMOS standard cell, is reconfigurable, and with a change in a single parameter, can implement all standard operations involved in a BNN. We present novel algorithms for mapping arbitrary nodes of a BNN onto the TULIP-PEs. TULIP was implemented as an ASIC in TSMC 40nm-LP technology. To provide a fair comparison, a recently reported BNN that employs a conventional MAC-based arithmetic processor was also implemented in the same technology. The results show that TULIP is consistently 3X more energy-efficient than the conventional design, without any penalty in performance, area, or accuracy.

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable nonvolatile memory designs. While various nonvolatile memory technologies, including Non-destructive readout, vortex transitional memory (VTM), and magnetic memory, have been explored, achieving a superconductor random-access memory (RAM) crossbar array remains challenging. This paper introduces a novel, nonvolatile, high-density, and scalable VTM cell design for SCE applications. Our proposed design addresses scaling issues while boasting zero static power consumption characteristics. Our design leverages current summation, enabling analog multiply-accumulate operations -an essential feature for many in-memory computational tasks. We demonstrate the efficacy of our approach with a 32 x 32 superconductor memory array operating at 20 GHz. This design effectively addresses scaling issues and utilizes current summation that can be used for analog multiply-accumulate operations. Additionally, we showcase the accumulation property of the memory through analog simulations conducted on an 8 x 8 superconductor crossbar array.

In this work, we present Multimodal Equivariant Inverse Design Network (MEIDNet), a framework that jointly learns structural information and materials properties through contrastive learning, while encoding structures via an equivariant graph neural network (EGNN). By combining generative inverse design with multimodal learning, our approach accelerates the exploration of chemical-structural space and facilitates the discovery of materials that satisfy predefined property targets. MEIDNet exhibits strong latent-space alignment with cosine similarity 0.96 by fusion of three modalities through cross-modal learning. Through implementation of curriculum learning strategies, MEIDNet achieves ~60 times higher learning efficiency than conventional training techniques. The potential of our multimodal approach is demonstrated by generating low-bandgap perovskite structures at a stable, unique, and novel (SUN) rate of 13.6 %, which are further validated by ab initio methods. Our inverse design framework demonstrates both scalability and adaptability, paving the way for the universal learning of chemical space across diverse modalities.

Printed Electronics (PE) feature distinct and remarkable characteristics that make them a prominent technology for achieving true ubiquitous computing. This is particularly relevant in application domains that require conformal and ultra-low cost solutions, which have experienced limited penetration of computing until now. Unlike silicon-based technologies, PE offer unparalleled features such as non-recurring engineering costs, ultra-low manufacturing cost, and on-demand fabrication of conformal, flexible, non-toxic, and stretchable hardware. However, PE face certain limitations due to their large feature sizes, that impede the realization of complex circuits, such as machine learning classifiers. In this work, we address these limitations by leveraging the principles of Approximate Computing and Bespoke (fully-customized) design. We propose an automated framework for designing ultra-low power Multilayer Perceptron (MLP) classifiers which employs, for the first time, a holistic approach to approximate all functions of the MLP's neurons: multiplication, accumulation, and activation. Through comprehensive evaluation across various MLPs of varying size, our framework demonstrates the ability to enable battery-powered operation of even the most intricate MLP architecture examined, significantly surpassing the current state of the art.

The increasing use of two-dimensional (2D) materials in nanoelectronics demands robust metrology techniques for electrical characterization, especially for large-scale production. While atomic force microscopy (AFM) techniques like conductive AFM (C-AFM) offer high accuracy, they suffer from slow data acquisition speeds due to the raster scanning process. To address this, we introduce SparseC-AFM, a deep learning model that rapidly and accurately reconstructs conductivity maps of 2D materials like MoS_2 from sparse C-AFM scans. Our approach is robust across various scanning modes, substrates, and experimental conditions. We report a comparison between (a) classic flow implementation, where a high pixel density C-AFM image (e.g., 15 minutes to collect) is manually parsed to extract relevant material parameters, and (b) our SparseC-AFM method, which achieves the same operation using data that requires substantially less acquisition time (e.g., under 5 minutes). SparseC-AFM enables efficient extraction of critical material parameters in MoS_2, including film coverage, defect density, and identification of crystalline island boundaries, edges, and cracks. We achieve over 11x reduction in acquisition time compared to manual extraction from a full-resolution C-AFM image. Moreover, we demonstrate that our model-predicted samples exhibit remarkably similar electrical properties to full-resolution data gathered using classic-flow scanning. This work represents a significant step toward translating AI-assisted 2D material characterization from laboratory research to industrial fabrication. Code and model weights are available at github.com/UNITES-Lab/sparse-cafm.

The rapid advancement of perovskite solar cells (PSCs) has led to an exponential growth in research publications, creating an urgent need for efficient knowledge management and reasoning systems in this domain. We present a comprehensive knowledge-enhanced system for PSCs that integrates three key components. First, we develop Perovskite-KG, a domain-specific knowledge graph constructed from 1,517 research papers, containing 23,789 entities and 22,272 relationships. Second, we create two complementary datasets: Perovskite-Chat, comprising 55,101 high-quality question-answer pairs generated through a novel multi-agent framework, and Perovskite-Reasoning, containing 2,217 carefully curated materials science problems. Third, we introduce two specialized large language models: Perovskite-Chat-LLM for domain-specific knowledge assistance and Perovskite-Reasoning-LLM for scientific reasoning tasks. Experimental results demonstrate that our system significantly outperforms existing models in both domain-specific knowledge retrieval and scientific reasoning tasks, providing researchers with effective tools for literature review, experimental design, and complex problem-solving in PSC research.

Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery of a charge density wave in ScV6Sn6provides a new avenue for investigation. In thiswork, we investigate the electronic structure of the novel kagome metal ScV6Sn6using angle resolvedphotoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and first-principlesdensity functional theory calculations. Our analysis reveals for the first time the temperature-dependent band changes of ScV6Sn6and identifies a new band that exhibits a strong signatureof a structure with CDW below the critical temperature. Further analysis revealed that this newband is due to the surface kagome layer of the CDW structure. In addition, a Lifshitz transition isidentified in the ARPES spectra that is related to the saddle point moving across the Fermi levelat the critical temperature for the CDW formation. This result shows the CDW behavior may alsobe related to nesting of the saddle point, similar to related materials. However, no energy gap is observed at the Fermi level and thus the CDW is not a typical Fermi surface nesting scenario. These results provide new insights into the underlying physics of the CDW in the kagome materials and could have implications for the development of materials with new functionality.

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.

Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

Material and product life cycles are based on complex value chains of technology-specific elements. Resource strategy aspects of essential and strategic raw materials have a direct impact on applications of new functionalized materials or the development of novel products. Thus, an urgent challenge of modern materials science is to obtain information about the supply risk and environmental aspects of resource utilization, especially at an early stage of basic research. Combining the fields of materials science, industrial engineering and resource strategy enables a multidisciplinary research approach to identify specific risks within the value chain, aggregated as the so-called resource criticality. Here, we demonstrate a step-by-step criticality assessment in the sector of basic materials research for multifunctional hexagonal manganite YMnO3, which can be a candidate for future electronic systems. Raw material restrictions can be quantitatively identified, even at such an early stage of materials research, from eleven long-term indicators including our new developed Sector Competition Index. This approach for resource strategy for modern material science integrates two objective targets: reduced supply risk and enhanced environmental sustainability of new functionalized materials, showing drawbacks but also benefits towards a sustainable materials research and development.

Neuromorphic computing, which exploits Spiking Neural Networks (SNNs) on neuromorphic chips, is a promising energy-efficient alternative to traditional AI. CNN-based SNNs are the current mainstream of neuromorphic computing. By contrast, no neuromorphic chips are designed especially for Transformer-based SNNs, which have just emerged, and their performance is only on par with CNN-based SNNs, offering no distinct advantage. In this work, we propose a general Transformer-based SNN architecture, termed as ``Meta-SpikeFormer", whose goals are: 1) Lower-power, supports the spike-driven paradigm that there is only sparse addition in the network; 2) Versatility, handles various vision tasks; 3) High-performance, shows overwhelming performance advantages over CNN-based SNNs; 4) Meta-architecture, provides inspiration for future next-generation Transformer-based neuromorphic chip designs. Specifically, we extend the Spike-driven Transformer in yao2023spike into a meta architecture, and explore the impact of structure, spike-driven self-attention, and skip connection on its performance. On ImageNet-1K, Meta-SpikeFormer achieves 80.0\% top-1 accuracy (55M), surpassing the current state-of-the-art (SOTA) SNN baselines (66M) by 3.7\%. This is the first direct training SNN backbone that can simultaneously supports classification, detection, and segmentation, obtaining SOTA results in SNNs. Finally, we discuss the inspiration of the meta SNN architecture for neuromorphic chip design. Source code and models are available at https://github.com/BICLab/Spike-Driven-Transformer-V2.

Accelerated materials discovery is an urgent demand to drive advancements in fields such as energy conversion, storage, and catalysis. Property-directed generative design has emerged as a transformative approach for rapidly discovering new functional inorganic materials with multiple desired properties within vast and complex search spaces. However, this approach faces two primary challenges: data scarcity for functional properties and the multi-objective optimization required to balance competing tasks. Here, we present a multi-property-directed generative framework designed to overcome these limitations and enhance site symmetry-compliant crystal generation beyond P1 (translational) symmetry. By incorporating Wyckoff-position-based data augmentation and transfer learning, our framework effectively handles sparse and small functional datasets, enabling the generation of new stable materials simultaneously conditioned on targeted space group, band gap, and formation energy. Using this approach, we identified previously unknown thermodynamically and lattice-dynamically stable semiconductors in tetragonal, trigonal, and cubic systems, with bandgaps ranging from 0.13 to 2.20 eV, as validated by density functional theory (DFT) calculations. Additionally, we assessed their thermoelectric descriptors using DFT, indicating their potential suitability for thermoelectric applications. We believe our integrated framework represents a significant step forward in generative design of inorganic materials.

Context-sensitive two-point layer 5 pyramidal cells (L5PCs) were discovered as long ago as 1999. However, the potential of this discovery to provide useful neural computation has yet to be demonstrated. Here we show for the first time how a transformative L5PCs-driven deep neural network (DNN), termed the multisensory cooperative computing (MCC) architecture, can effectively process large amounts of heterogeneous real-world audio-visual (AV) data, using far less energy compared to best available 'point' neuron-driven DNNs. A novel highly-distributed parallel implementation on a Xilinx UltraScale+ MPSoC device estimates energy savings up to 245759 times 50000 muJ (i.e., 62% less than the baseline model in a semi-supervised learning setup) where a single synapse consumes 8e^{-5}muJ. In a supervised learning setup, the energy-saving can potentially reach up to 1250x less (per feedforward transmission) than the baseline model. The significantly reduced neural activity in MCC leads to inherently fast learning and resilience against sudden neural damage. This remarkable performance in pilot experiments demonstrates the embodied neuromorphic intelligence of our proposed cooperative L5PC that receives input from diverse neighbouring neurons as context to amplify the transmission of most salient and relevant information for onward transmission, from overwhelmingly large multimodal information utilised at the early stages of on-chip training. Our proposed approach opens new cross-disciplinary avenues for future on-chip DNN training implementations and posits a radical shift in current neuromorphic computing paradigms.

Networks of atom-centered coordination octahedra commonly occur in inorganic and hybrid solid-state materials. Characterizing their spatial arrangements and characteristics is crucial for relating structures to properties for many materials families. The traditional method using case-by-case inspection becomes prohibitive for discovering trends and similarities in large datasets. Here, we operationalize chemical intuition to automate the geometric parsing, quantification, and classification of coordination octahedral networks. We find axis-resolved tilting trends in ABO_{3} perovskite polymorphs, which assist in detecting oxidation state changes. Moreover, we develop a scale-invariant encoding scheme to represent these networks, which, combined with human-assisted unsupervised machine learning, allows us to taxonomize the inorganic framework polytypes in hybrid iodoplumbates (A_xPb_yI_z). Consequently, we uncover a violation of Pauling's third rule and the design principles underpinning their topological diversity. Our results offer a glimpse into the vast design space of atomic octahedral networks and inform high-throughput, targeted screening of specific structure types.

Due to the high activation sparsity and use of accumulates (AC) instead of expensive multiply-and-accumulates (MAC), neuromorphic spiking neural networks (SNNs) have emerged as a promising low-power alternative to traditional DNNs for several computer vision (CV) applications. However, most existing SNNs require multiple time steps for acceptable inference accuracy, hindering real-time deployment and increasing spiking activity and, consequently, energy consumption. Recent works proposed direct encoding that directly feeds the analog pixel values in the first layer of the SNN in order to significantly reduce the number of time steps. Although the overhead for the first layer MACs with direct encoding is negligible for deep SNNs and the CV processing is efficient using SNNs, the data transfer between the image sensors and the downstream processing costs significant bandwidth and may dominate the total energy. To mitigate this concern, we propose an in-sensor computing hardware-software co-design framework for SNNs targeting image recognition tasks. Our approach reduces the bandwidth between sensing and processing by 12-96x and the resulting total energy by 2.32x compared to traditional CV processing, with a 3.8% reduction in accuracy on ImageNet.

We report the discovery of a ferroelectric ground state below 4.5 K in highly underdoped La_2CuO_(4+x) accompanied by slow charge dynamics which develop below T~40 K. An anisotropic magnetoelectric response has also been observed, indicating considerable spin-charge coupling in this lightly doped "parent" high temperature copper-oxide superconductor. The ferroelectric state is proposed to develop from polar nanoregions, in which spatial inversion symmetry is locally broken due to non-stoichiometric carrier doping.

Transition metal dichalcogenides (TMDs) and their Weyl semimetal phases, such as MoTe_2, have attracted significant attention for spin-orbit torque applications due to their efficient charge-to-spin conversion. However, whether this conversion originates predominantly from the bulk or the interface remains unclear. Here, we investigate spin-charge interconversion in MoTe_2 using spin-pumping and spin-torque ferromagnetic resonance (SP-FMR and ST-FMR). Thickness-dependent measurements reveal large spin-to-charge conversion and spin-torque efficiencies that are essentially independent of MoTe_2 thickness, indicating that the conversion is predominantly governed by the Rashba-Edelstein effect at the Py/MoTe_2 interface rather than by bulk spin transport. This behavior contrasts with the characteristic thickness dependence observed in Pt heterostructures and is further supported by bidirectional SP-FMR and interface-separation measurements. Our results highlight the dominant role of the Py/MoTe_2 interface in enabling efficient spin-charge conversion and spin-orbit torques in TMD-based spintronic devices. These findings highlight the potential of sputtered MoTe_2/Py heterostructures for low-power spintronic applications, including magnetic memory and logic devices.

Developing accurate, transferable and computationally inexpensive machine learning models can rapidly accelerate the discovery and development of new materials. Some of the major challenges involved in developing such models are, (i) limited availability of materials data as compared to other fields, (ii) lack of universal descriptor of materials to predict its various properties. The limited availability of materials data can be addressed through transfer learning, while the generic representation was recently addressed by Xie and Grossman [1], where they developed a crystal graph convolutional neural network (CGCNN) that provides a unified representation of crystals. In this work, we develop a new model (MT-CGCNN) by integrating CGCNN with transfer learning based on multi-task (MT) learning. We demonstrate the effectiveness of MT-CGCNN by simultaneous prediction of various material properties such as Formation Energy, Band Gap and Fermi Energy for a wide range of inorganic crystals (46774 materials). MT-CGCNN is able to reduce the test error when employed on correlated properties by upto 8%. The model prediction has lower test error compared to CGCNN, even when the training data is reduced by 10%. We also demonstrate our model's better performance through prediction of end user scenario related to metal/non-metal classification. These results encourage further development of machine learning approaches which leverage multi-task learning to address the aforementioned challenges in the discovery of new materials. We make MT-CGCNN's source code available to encourage reproducible research.

As neural computation is revolutionizing the field of Artificial Intelligence (AI), rethinking the ideal neural hardware is becoming the next frontier. Fast and reliable von Neumann architecture has been the hosting platform for neural computation. Although capable, its separation of memory and computation creates the bottleneck for the energy efficiency of neural computation, contrasting the biological brain. The question remains: how can we efficiently combine memory and computation, while exploiting the physics of the substrate, to build intelligent systems? In this thesis, I explore an alternative way with memristive devices for neural computation, where the unique physical dynamics of the devices are used for inference, learning and routing. Guided by the principles of gradient-based learning, we selected functions that need to be materialized, and analyzed connectomics principles for efficient wiring. Despite non-idealities and noise inherent in analog physics, I will provide hardware evidence of adaptability of local learning to memristive substrates, new material stacks and circuit blocks that aid in solving the credit assignment problem and efficient routing between analog crossbars for scalable architectures.

Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remains unclear and a unified methodology is lacking. Here, we present and analyse a comprehensive and efficient approach to compute the intrinsic, phonon-limited drift and Hall carrier mobilities of semiconductors, within the framework of the first-principles Boltzmann transport equation. The methodology exploits a novel approach for estimating quadrupole tensors and including them in the electron-phonon interactions, and capitalises on a rigorous and efficient procedure for numerical convergence. The accuracy reached in this work allows to assess common approximations, including the role of exchange and correlation functionals, spin-orbit coupling, pseudopotentials, Wannier interpolation, Brillouin-zone sampling, dipole and quadrupole corrections, and the relaxation-time approximation. A detailed analysis is showcased on ten prototypical semiconductors, namely diamond, silicon, GaAs, 3C-SiC, AlP, GaP, c-BN, AlAs, AlSb, and SrO. By comparing this extensive dataset with available experimental data, we explore the intrinsic nature of phonon-limited carrier transport and magnetotransport phenomena in these compounds. We find that the most accurate calculations predict Hall mobilities up to a factor of two larger than experimental data; this could point to promising experimental improvements in the samples quality, or to the limitations of density-function theory in predicting the carrier effective masses and overscreening the electron-phonon matrix elements. By setting tight standards for reliability and reproducibility, the present work aims to facilitate validation and verification of data and software towards predictive calculations of transport phenomena in semiconductors.

Large Language Models (LLMs) have demonstrated the potential to address some issues within the semiconductor industry. However, they are often general-purpose models that lack the specialized knowledge needed to tackle the unique challenges of this sector, such as the intricate physics and chemistry of semiconductor devices and processes. SemiKong, the first industry-specific LLM for the semiconductor domain, provides a foundation that can be used to develop tailored proprietary models. With SemiKong 1.0, we aim to develop a foundational model capable of understanding etching problems at an expert level. Our key contributions include (a) curating a comprehensive corpus of semiconductor-related texts, (b) creating a foundational model with in-depth semiconductor knowledge, and (c) introducing a framework for integrating expert knowledge, thereby advancing the evaluation process of domain-specific AI models. Through fine-tuning a pre-trained LLM using our curated dataset, we have shown that SemiKong outperforms larger, general-purpose LLMs in various semiconductor manufacturing and design tasks. Our extensive experiments underscore the importance of developing domain-specific LLMs as a foundation for company- or tool-specific proprietary models, paving the way for further research and applications in the semiconductor domain. Code and dataset will be available at https://github.com/aitomatic/semikong

Deploying advanced large language models on edge devices, such as smartphones and robotics, is a growing trend that enhances user data privacy and network connectivity resilience while preserving intelligent capabilities. However, such a task exhibits single-batch computing with incredibly low arithmetic intensity, which poses the significant challenges of huge memory footprint and bandwidth demands on limited edge resources. To address these issues, we introduce Cambricon-LLM, a chiplet-based hybrid architecture with NPU and a dedicated NAND flash chip to enable efficient on-device inference of 70B LLMs. Such a hybrid architecture utilizes both the high computing capability of NPU and the data capacity of the NAND flash chip, with the proposed hardware-tiling strategy that minimizes the data movement overhead between NPU and NAND flash chip. Specifically, the NAND flash chip, enhanced by our innovative in-flash computing and on-die ECC techniques, excels at performing precise lightweight on-die processing. Simultaneously, the NPU collaborates with the flash chip for matrix operations and handles special function computations beyond the flash's on-die processing capabilities. Overall, Cambricon-LLM enables the on-device inference of 70B LLMs at a speed of 3.44 token/s, and 7B LLMs at a speed of 36.34 token/s, which is over 22X to 45X faster than existing flash-offloading technologies, showing the potentiality of deploying powerful LLMs in edge devices.

Planar metasurfaces can profoundly control electromagnetic scattering. At microwave frequencies, such devices are typically implemented using multilayer cascades of patterned metallic sheets, whose design often requires time-consuming full-wave optimization. Here, we extend analytical models originally developed for sparse loaded-wire metagratings to accurately describe densely packed Jerusalem-cross meta-atoms embedded in standard printed circuit board (PCB) dielectric stacks. The model captures both near- and far-field coupling within and between layers, enabling efficient prediction of the dual-polarized response. Using this framework, we identify highly transmissive meta-atoms whose phase is controlled by the leg lengths of the Jerusalem crosses (microscopic design stage). This (phase)-(leg-length) "lookup table" allows rapid synthesis of Huygens' metasurfaces (macroscopic design stage), demonstrated through a full-wave-validated metalens exhibiting low-reflection beam manipulation. Notably, we implement a judicious scaling method to further extend the model to predict wideband meta-atom responses. In the companion paper (Part II), a hybrid machine-learning approach leverages this semianalytical framework to enhance accuracy without requiring the conventional exhaustive full-wave training, enabling ultrafast inverse design across the full parameter space. Overall, the presented methodology -- the standalone semianlytical scheme (Part I) and the machine-learning enhanced version (Part II) -- establishes an effective open-source toolkit for versatile, rapid, and highly accurate synthesis of fabrication-ready dual-polarized transmissive Huygens' meta-atoms and metasurfaces.

Raman spectroscopy is one of the most accessible vibrational probes in materials laboratories, but its forward problem (structure to spectrum) is bottlenecked by the cost of density functional perturbation theory, and its inverse problem (spectrum to structure) typically relies on retrieval against curated references. We introduce RamanGPT, a deep-learning framework that addresses both directions for crystalline inorganic materials. The forward model, an Atomistic Line Graph Neural Network (ALIGNN), is trained on the 5{,}099-material Computational Raman Database and predicts 200-bin spectra over 50-1000~cm^{-1} with 42.5\% having a cosine similarity greater than or equal to 0.354 suggesting qualitative features of the target spectrum. The model also shows some qualitative agreement with the approximate features and appearance of similar relative intensity of the modes to an experimental measurement of metallic 1T VSe_{2}, a system absent from the training set. The inverse model fine-tunes a large language model via Quantized Low-Rank Adaptation on Raman-plus-formula prompts, recovering lattice parameters with mean absolute errors of 1.14-2.16~Å and reduced-formula consistency of 86.8\% on 508 held-out materials. A cosine-similarity matcher and an inverserightarrowrelaxrightarrowforward consistency loop are deployed at https://atomgpt.org/raman.

It was previously believed that the Bloch electronic states of non-magnetic materials with inversion symmetry cannot have finite spin polarizations. However, since the seminal work by Zhang et al. [Nat. Phys. 10, 387-393 (2014)] on local spin polarizations of Bloch states in non-magnetic, centrosymmetric materials, the scope of spintronics has been significantly broadened. Here, we show, using a framework that is universally applicable independent of whether hidden spin polarizations are small (e.g., diamond, Si, Ge, and GaAs) or large (e.g., MoS2 and WSe2), that the corresponding quantity arising from orbital - instead of spin - degrees of freedom, the hidden orbital polarization, is (i) much more abundant in nature since it exists even without spin-orbit coupling and (ii) more fundamental since the interband matrix elements of the site-dependent orbital angular momentum operator determines the hidden spin polarization. We predict that the hidden spin polarization of transition metal dichalcogenides is reduced significantly upon compression. We suggest experimental signatures of hidden orbital polarization from photoemission spectroscopies and demonstrate that the current-induced hidden orbital polarization may play a far more important role than its spin counterpart in antiferromagnetic information technology by calculating the current-driven antiferromagnetism in compressed silicon.

The human brain is a complex spiking neural network (SNN) that learns multimodal signals in a zero-shot manner by generalizing existing knowledge. Remarkably, the brain achieves this with minimal power consumption, using event-based signals that propagate within its structure. However, mimicking the human brain in neuromorphic hardware presents both hardware and software challenges. Hardware limitations, such as the slowdown of Moore's law and the von Neumann bottleneck, hinder the efficiency of digital computers. On the software side, SNNs are known for their difficult training, especially when learning multimodal signals. To overcome these challenges, we propose a hardware-software co-design that combines a fixed and random liquid state machine (LSM) SNN encoder with trainable artificial neural network (ANN) projections. The LSM is physically implemented using analogue resistive memory, leveraging the inherent stochasticity of resistive switching to generate random weights. This highly efficient and nanoscale in-memory computing approach effectively addresses the von Neumann bottleneck and the slowdown of Moore's law. The ANN projections are implemented digitally, allowing for easy optimization using contrastive loss, which helps to overcome the difficulties associated with SNN training. We experimentally implement this co-design on a 40nm 256Kb in-memory computing macro. We first demonstrate LSM-based event encoding through supervised classification and linear probing on the N-MNIST and N-TIDIGITS datasets.

Atomic layer deposition (ALD) is widely studied for numerous applications and is commercially employed in the semiconductor industry, where planar substrates are the norm. However, the inherent ALD feature of coating virtually any surface geometry with atomistic thickness control is equally attractive for coating particulate materials (supports). In this review, we provide a comprehensive overview of the developments in this decades-old field of ALD on particulate materials, drawing on a bottom-up and quantitative analysis of 799 articles from this field. The obtained dataset is the basis for abstractions regarding reactor types (specifically for particles), coating materials, reactants, supports and processing conditions. Furthermore, the dataset enables direct access to specific processing conditions (for a given material, surface functionality, application etc.) and increases accessibility of the respective literature. We also review fundamental concepts of ALD on particles, and discuss the most common applications, i.e., catalysis (thermo-, electro-, photo-), batteries, luminescent phosphors and healthcare. Finally, we identify historical trends, and provide an outlook on prospective developments.

Despite significant research on lightweight deep neural networks (DNNs) designed for edge devices, the current face detectors do not fully meet the requirements for "intelligent" CMOS image sensors (iCISs) integrated with embedded DNNs. These sensors are essential in various practical applications, such as energy-efficient mobile phones and surveillance systems with always-on capabilities. One noteworthy limitation is the absence of suitable face detectors for the always-on scenario, a crucial aspect of image sensor-level applications. These detectors must operate directly with sensor RAW data before the image signal processor (ISP) takes over. This gap poses a significant challenge in achieving optimal performance in such scenarios. Further research and development are necessary to bridge this gap and fully leverage the potential of iCIS applications. In this study, we aim to bridge the gap by exploring extremely low-bit lightweight face detectors, focusing on the always-on face detection scenario for mobile image sensor applications. To achieve this, our proposed model utilizes sensor-aware synthetic RAW inputs, simulating always-on face detection processed "before" the ISP chain. Our approach employs ternary (-1, 0, 1) weights for potential implementations in image sensors, resulting in a relatively simple network architecture with shallow layers and extremely low-bitwidth. Our method demonstrates reasonable face detection performance and excellent efficiency in simulation studies, offering promising possibilities for practical always-on face detectors in real-world applications.

As computational demands continue to rise, assessing the environmental footprint of AI requires moving beyond energy and water consumption to include the material demands of specialized hardware. This study quantifies the material footprint of AI training by linking computational workloads to physical hardware needs. The elemental composition of the Nvidia A100 SXM 40 GB graphics processing unit (GPU) was analyzed using inductively coupled plasma optical emission spectroscopy, which identified 32 elements. The results show that AI hardware consists of about 90% heavy metals and only trace amounts of precious metals. The elements copper, iron, tin, silicon, and nickel dominate the GPU composition by mass. In a multi-step methodology, we integrate these measurements with computational throughput per GPU across varying lifespans, accounting for the computational requirements of training specific AI models at different training efficiency regimes. Scenario-based analyses reveal that, depending on Model FLOPs Utilization (MFU) and hardware lifespan, training GPT-4 requires between 1,174 and 8,800 A100 GPUs, corresponding to the extraction and eventual disposal of up to 7 tons of toxic elements. Combined software and hardware optimization strategies can reduce material demands: increasing MFU from 20% to 60% lowers GPU requirements by 67%, while extending lifespan from 1 to 3 years yields comparable savings; implementing both measures together reduces GPU needs by up to 93%. Our findings highlight that incremental performance gains, such as those observed between GPT-3.5 and GPT-4, come at disproportionately high material costs. The study underscores the necessity of incorporating material resource considerations into discussions of AI scalability, emphasizing that future progress in AI must align with principles of resource efficiency and environmental responsibility.

While many piezoelectric materials are known, there is still great potential to improve on the figures of merit of existing materials through compositional doping, forming solid solutions. Specifically, it has been shown that doping and alloying wurtzite-structured materials can improve the piezoelectric response; however, a vast compositional space has remained unexplored. In this work, we apply a multi-level screening protocol combining machine learning, chemical intuition, and thermodynamics to systematically discover dopant combinations in wurtzite material space that improve the desired piezoelectric response. Through our protocol, we use computationally inexpensive screening calculations to consider more than 3000 possible ternary wurtzite solid solutions from 9 different wurtzite base systems: AlN, BeO, CdS, CdSe, GaN, ZnO, ZnS, ZnSe, and AgI. Finally, based on thermodynamic analysis and explicit piezoelectric response calculations, we predict 11 materials with improved piezoelectric response, due to the incorporation of electropositive dopants.

Computer vision researchers are embracing two promising paradigms: Vision Transformers (ViTs) and Multi-task Learning (MTL), which both show great performance but are computation-intensive, given the quadratic complexity of self-attention in ViT and the need to activate an entire large MTL model for one task. M^3ViT is the latest multi-task ViT model that introduces mixture-of-experts (MoE), where only a small portion of subnetworks ("experts") are sparsely and dynamically activated based on the current task. M^3ViT achieves better accuracy and over 80% computation reduction but leaves challenges for efficient deployment on FPGA. Our work, dubbed Edge-MoE, solves the challenges to introduce the first end-to-end FPGA accelerator for multi-task ViT with a collection of architectural innovations, including (1) a novel reordering mechanism for self-attention, which requires only constant bandwidth regardless of the target parallelism; (2) a fast single-pass softmax approximation; (3) an accurate and low-cost GELU approximation; (4) a unified and flexible computing unit that is shared by almost all computational layers to maximally reduce resource usage; and (5) uniquely for M^3ViT, a novel patch reordering method to eliminate memory access overhead. Edge-MoE achieves 2.24x and 4.90x better energy efficiency comparing with GPU and CPU, respectively. A real-time video demonstration is available online, along with our open-source code written using High-Level Synthesis.

Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine-learning-assisted design and integrated experiment-theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.

Comprehensive study using DC transport, specific heat, magnetization, and two-coil mutual inductance measurements unveils an understanding of three temperature regimes in SmB_6: (i) T geq T^{*} (sim66K), (ii) T_g (sim40 K) leq T < T^{*}, and (iii) T < T_g. Onset of Kondo breakdown below T^{*} releases disorder-driven magnetic fluctuations, which splits the bulk (sim116K) and surface Kondo temperature (T_k^{s} approx 7 K). Below T_g, as magnetic fluctuations subside, surface Kondo screening revives, stabilizing the topological surface state and generating an in-gap feature (sim2.2 meV) across which Dirac-like carriers are excited. Nyquist impedance analysis reveals a crossover from purely capacitive to capacitive-inductive behavior, signalling a disorder-driven two-fluid phase of heavy quasiparticles and light, high-mobility carriers below T_g. We identify a characteristic length scale, L_{ν_0}(T), associated with the high-mobility phase, exhibiting an almost divergent trend below T_k^{s}. These findings underscore the complex nature of the surface conducting state in SmB_6.

Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.

Autferroics, recently proposed as a sister branch of multiferroics, exhibit strong intrinsic magnetoelectricity, but ferroelectricity and magnetism are mutually exclusive rather than coexisting. Here, a general model is considered based on the Landau theory, to clarify the distinction between multi and autferroics by qualitative change-rotation in Landau free energy landscape and in particular phase mapping. The TiGeSe_3 exemplifies a factual material, whose first-principles computed Landau coefficients predict its autferroicity. Our investigations pave the way for an alternative avenue in the pursuit of intrinsically strong magnetoelectrics.

We have systematically investigated the grain boundary (GB) angle dependence of transport properties for NdFeAs(O,F) fabricated on [001]-tilt symmetric MgO bicrystal substrates. In our previous study, NdFeAs(O,F) bicrystal films showed a weak-link behaviour even at a GB angle of 6°. However, this was caused by an extrinsic effect originating from the damage to both NdFeAs(O,F) and MgO substrate by excess F-diffusion along the grain boundary. To investigate the intrinsic nature of grain boundaries, we minimized the damage to NdFeAs(O,F) and MgO by reducing the deposition temperature of NdOF over-layer needed for F-doping. The resultant NdFeAs(O,F) bicrystal films have a critical angle of 8.5°, above which Jc starts to decrease exponentially. This critical angle is almost the same as those of other Fe-based superconductors.

Characterizing materials with electron micrographs poses significant challenges for automated labeling due to the complex nature of nanomaterial structures. To address this, we introduce a fully automated, end-to-end pipeline that leverages recent advances in Generative AI. It is designed for analyzing and understanding the microstructures of semiconductor materials with effectiveness comparable to that of human experts, contributing to the pursuit of Artificial General Intelligence (AGI) in nanomaterial identification. Our approach utilizes Large MultiModal Models (LMMs) such as GPT-4V, alongside text-to-image models like DALLE-3. We integrate a GPT-4 guided Visual Question Answering (VQA) method to analyze nanomaterial images, generate synthetic nanomaterial images via DALLE-3, and employ in-context learning with few-shot prompting in GPT-4V for accurate nanomaterial identification. Our method surpasses traditional techniques by enhancing the precision of nanomaterial identification and optimizing the process for high-throughput screening.

We present the first complete machine learning method for accelerating plane-wave density functional theory (DFT) in materials under the projector augmented wave (PAW) formalism. We formalize seven criteria that a Complete Neural Electronic Initializer must satisfy for practical end-to-end PAW DFT acceleration. Applying these criteria to prior work reveals two missing structure-dependent components, augmentation occupancies and spin initialization, that prevent existing methods from providing complete reference-free initialization. Controlled ablations show that omitting these components can eliminate or reverse the acceleration obtained via models that only predict the smooth valence density. We satisfy these missing requirements by introducing AugNet, the first general equivariant model for PAW augmentation occupancies, and the first general spin density model for materials, which predicts the smooth spin-difference density and spin-difference PAW augmentation occupancies using predicted magnetic moments to constrain the global magnetic state. Combined with existing valence density models, these components satisfy all seven criteria and form a fully reference-free electronic initializer for materials DFT, requiring no electronic quantities from a converged target calculation. Our method reduces end-to-end DFT wall time by up to ~25% on unseen structures while preserving converged energies.

Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin direction, are ideal for spintronic applications. Half metallic antiferromagnets as a subclass of half metals are characterized further by totally compensated spin moments in a unit cell, and have the advantage of being able to generate fully spin-polarized current while exhibiting zero macroscopic magnetization. Considerable efforts have been devoted to the search for this novel material, from which we may get useful hints for prospective material exploration.

We prepared Na_xTO_2 (T = Mn, Co) nanostructures to use as cathode material in Na-ion batteries. The Rietveld refinement of x-ray diffraction data confirms the hexagonal symmetry. Scanning and transmission electron microscopy measurements show hexagonal and rod-shape morphology for T = Co and Mn, respectively. The magnetic measurements indicate the presence of variable oxidation states of Mn/Co ions, but no long range ordering till 5~K. We find that the Na_{0.6}MnO_2 is highly insulating whereas Na_{0.7}CoO_2 is semiconducting in nature. The conduction in Na_{0.7}CoO_2 takes place through both variable range hopping (VRH) as well as activation mechanisms in different temperature ranges. However, for Na_{0.6}MnO_2 the VRH prevails at elevated temperatures. Furthermore, the coin cells have been fabricated and tested the electrochemical behavior using cyclic voltammetry, which confirms the reversibility of Na--ions during intercalation/de-intercalation.

Neuromorphic models take inspiration from the human brain by adopting bio-plausible neuron models to build alternatives to traditional Machine Learning (ML) and Deep Learning (DL) solutions. The scarce availability of dedicated hardware able to actualize the emulation of brain-inspired computation, which is otherwise only simulated, yet still hinders the wide adoption of neuromorphic computing for edge devices and embedded systems. With this premise, we adopt the perspective of neuromorphic computing for conventional hardware and we present the L2MU, a natively neuromorphic Legendre Memory Unit (LMU) which entirely relies on Leaky Integrate-and-Fire (LIF) neurons. Specifically, the original recurrent architecture of LMU has been redesigned by modelling every constituent element with neural populations made of LIF or Current-Based (CuBa) LIF neurons. To couple neuromorphic computing and off-the-shelf edge devices, we equipped the L2MU with an input module for the conversion of real values into spikes, which makes it an encoding-free implementation of a Recurrent Spiking Neural Network (RSNN) able to directly work with raw sensor signals on non-dedicated hardware. As a use case to validate our network, we selected the task of Human Activity Recognition (HAR). We benchmarked our L2MU on smartwatch signals from hand-oriented activities, deploying it on three different commercial edge devices in compressed versions too. The reported results remark the possibility of considering neuromorphic models not only in an exclusive relationship with dedicated hardware but also as a suitable choice to work with common sensors and devices.

Superconducting Digital (SCD) technology offers significant potential for enhancing the performance of next generation large scale compute workloads. By leveraging advanced lithography and a 300 mm platform, SCD devices can reduce energy consumption and boost computational power. This paper presents a cross-layer modeling approach to evaluate the system-level performance benefits of SCD architectures for Large Language Model (LLM) training and inference. Our findings, based on experimental data and Pulse Conserving Logic (PCL) design principles, demonstrate substantial performance gain in both training and inference. We are, thus, able to convincingly show that the SCD technology can address memory and interconnect limitations of present day solutions for next-generation compute systems.

It has been proposed that the superconducting transition temperature T_{c} of an unconventional superconductor with a large pairing scale but strong phase fluctuations can be enhanced by coupling it to a metal. However, the general efficacy of this approach across different parameter regimes remains an open question. Using the dynamical cluster approximation, we study this question in a system composed of an attractive Hubbard layer in the intermediate coupling regime, where the magnitude of the attractive Coulomb interaction |U| is slightly larger than the bandwidth W, hybridized with a noninteracting metallic layer. We find that while the superconducting transition becomes more mean-field-like with increasing interlayer hopping, the superconducting transition temperature T_{c} exhibits a nonmonotonic dependence on the strength of the hybridization t_{perp}. This behavior arises from a reduction of the effective pairing interaction in the correlated layer that out-competes the growth in the intrinsic pair-field susceptibility induced by the coupling to the metallic layer. We find that the largest T_{c} inferred here for the composite system is below the maximum value currently estimated for the isolated negative-U Hubbard model.

We employ a descriptor based machine-learning approach to assess the effect of chemical alloying on formation-enthalpy of rare-earth intermetallics. Application of machine-learning approaches in rare-earth intermetallic design have been sparse due to limited availability of reliable datasets. In this work, we developed an `in-house' rare-earth database with more than 600+ compounds, each entry was populated with formation enthalpy and related atomic features using high-throughput density-functional theory (DFT). The SISSO (sure independence screening and sparsifying operator) based machine-learning method with meaningful atomic features was used for training and testing the formation enthalpies of rare earth compounds. The complex lattice function coupled with the machine-learning model was used to explore the effect of transition metal alloying on the energy stability of Ce based cubic Laves phases (MgCu_{2} type). The SISSO predictions show good agreement with high-fidelity DFT calculations and X-ray powder diffraction measurements. Our study provides quantitative guidance for compositional considerations within a machine-learning model and discovering new metastable materials. The electronic-structure of Ce-Fe-Cu based compound was also analyzed in-depth to understand the electronic origin of phase stability. The interpretable analytical models in combination with density-functional theory and experiments provide a fast and reliable design guide for discovering technologically useful materials.

As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering considerable design space extension for powers, signals or even devices on the wafer backside. The Flip FET (FFET), a novel transistor architecture combining 3D transistor stacking and fully functional wafer backside, was recently proposed. With symmetric dual-sided standard cell design, the FFET can deliver around 12.5% cell area scaling and faster but more energy-efficient libraries beyond other stacked transistor technologies such as CFET. Besides, thanks to the novel cell design with dual-sided pins, the FFET supports dual-sided signal routing, delivering better routability and larger backside design space. In this work, we demonstrated a comprehensive FFET evaluation framework considering physical implementation and block-level power-performance-area (PPA) assessment for the first time, in which key functions are dual-sided routing and dual-sided RC extraction. A 32-bit RISC-V core was used for the evaluation here. Compared to the CFET with single-sided signals, the FFET with single-sided signals achieved 23.3% post-P&R core area reduction, 25.0% higher frequency and 11.9% lower power at the same utilization, and 16.0 % higher frequency at the same core area. Meanwhile, the FFET supports dual-sided signals, which can further benefit more from flexible allocation of cell input pins on both sides. By optimizing the input pin density and BEOL routing layer number on each side, 10.6% frequency gain was realized without power degradation compared to the one with single-sided signal routing. Moreover, the routability and power efficiency of FFET barely degrades even with the routing layer number reduced from 12 to 5 on each side, validating the great space for cost-friendly design enabled by FFET.

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, t_c. Here, we describe a method to extract the t_c between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract {t}_{{c}}=5.5pm 1.8;{GHz} and {t}_{{c}}=2.2pm 1.3;{GHz} between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of t_c for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.

The structural stability and phonon properties of SnSe/SnS superlattices at finite temperatures have been studied using machine learning force field molecular dynamics and the anharmonic phonon approach. The vertical SnSe/SnS superlattice undergoes a phase transition from the Pnma phase to a novel P4/nmm phase at finite temperatures, which is different from the high-temperature Cmcm phase of the SnSe and SnS systems. The stability of P4/nmm phase is determined by molecular dynamics trajectories and anharmonic phonon dispersion relations. The imaginary modes of TO modes at the q=M(1/2,1/2,0) point of the P4/nmm phase in harmonic approximation become rigid at elevated temperatures. An analysis of phonon power spectra upon temperature also confirms the dynamic stabilization. The P4/nmm phase has higher symmetry than the Pnma phase, and the phase transition between them is accompanied by competition between the Jahn-Teller effect and phonon anharmonicity. Unlike the anisotropic distribution of Sn-Se/S bonds in the Pnma phase, the P4/nmm phase forms chemical bonds with similar bond lengths both in-plane and interlayer, and their resonance effect can significantly enhance phonon scattering. The calculated phonon density of states and lifetime is strongly temperature dependent, demonstrating the heavy anharmonicity in the SnSe/SnS system. The P4/nmm phase has an extremely low lattice thermal conductivity, close to the experimental values of SnSe and SnS. Moreover, with the reduction of band gap and the enhancement of band degeneracy near the Fermi level, the P4/nmm phase exhibits superior electronic transport properties and significantly enhanced response to infrared and visible light. This makes it show great potential in thermoelectric and photovoltaic applications.

Printed Electronics (PE) stands out as a promisingtechnology for widespread computing due to its distinct attributes, such as low costs and flexible manufacturing. Unlike traditional silicon-based technologies, PE enables stretchable, conformal,and non-toxic hardware. However, PE are constrained by larger feature sizes, making it challenging to implement complex circuits such as machine learning (ML) classifiers. Approximate computing has been proven to reduce the hardware cost of ML circuits such as Multilayer Perceptrons (MLPs). In this paper, we maximize the benefits of approximate computing by integrating hardware approximation into the MLP training process. Due to the discrete nature of hardware approximation, we propose and implement a genetic-based, approximate, hardware-aware training approach specifically designed for printed MLPs. For a 5% accuracy loss, our MLPs achieve over 5x area and power reduction compared to the baseline while outperforming state of-the-art approximate and stochastic printed MLPs.

A refined semi-holographic non-Fermi liquid model, in which carrier electrons hybridize with operators of a holographic critical sector, has been proposed recently for strange metallic behavior. The model, consistently with effective theory approach, has two couplings whose ratio is related to the doping. We explain the origin of the linear-in-T resistivity and strange metallic behavior as a consequence of the emergence of a universal form of the spectral function which is independent of the model parameters when the ratio of the two couplings take optimal values determined only by the critical exponent. This universal form fits well with photoemission data of copper oxide samples for under/optimal/over-doping with a fixed exponent over a wide range of temperatures. We further obtain a refined Planckian dissipation scenario in which the scattering time τ= f cdot hbar /(k_B T), with f being O(1) at strong coupling, but O(10) at weak coupling.

Density Functional Theory (DFT) underpins much of modern computational chemistry and materials science. Yet, the reliability of DFT-derived predictions of experimentally measurable properties remains fundamentally limited by the need to approximate the unknown exchange-correlation (XC) functional. The traditional paradigm for improving accuracy has relied on increasingly elaborate hand-crafted functional forms. This approach has led to a longstanding trade-off between computational efficiency and accuracy, which remains insufficient for reliable predictive modelling of laboratory experiments. Here we introduce Skala, a deep learning-based XC functional that surpasses state-of-the-art hybrid functionals in accuracy across the main-group chemistry benchmark set GMTKN55 with an error of 2.8 kcal/mol, while retaining the lower computational cost characteristic of semi-local DFT. This demonstrated departure from the historical trade-off between accuracy and efficiency is enabled by learning non-local representations of electronic structure directly from data, bypassing the need for increasingly costly hand-engineered features. Leveraging an unprecedented volume of high-accuracy reference data from wavefunction-based methods, we establish that modern deep learning enables systematically improvable neural exchange-correlation models as training datasets expand, positioning first-principles simulations to become progressively more predictive.

This work is dedicated to the review and perspective of the new direction that we call "Neuropunk revolution" resembling the cultural phenomenon of cyberpunk. This new phenomenon has its foundations in advances in neuromorphic technologies including memristive and bio-plausible simulations, BCI, and neurointerfaces as well as unconventional approaches to AI and computing in general. We present the review of the current state-of-the-art and our vision of near future development of scientific approaches and future technologies. We call the "Neuropunk revolution" the set of trends that in our view provide the necessary background for the new generation of approaches technologies to integrate the cybernetic objects with biological tissues in close loop system as well as robotic systems inspired by the biological processes again integrated with biological objects. We see bio-plausible simulations implemented by digital computers or spiking networks memristive hardware as promising bridge or middleware between digital and (neuro)biological domains.

The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all-van der Waals FGT/O-FGT/hBN heterostructure is demonstrated. The antiferromagnetic O-FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage-controlled magnetization switching, highlighting the potential of FGT-based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high-performance magnetic devices.

One of the main goals and challenges of materials discovery is to find the best candidates for each interest property or application. Machine learning rises in this context to efficiently optimize this search, exploring the immense materials space, consisting of simultaneously the atomic, compositional, and structural spaces. Topological insulators, presenting symmetry-protected metallic edge states, are a promising class of materials for different applications. However, further, development is limited by the scarcity of viable candidates. Here we present and discuss machine learning-accelerated strategies for searching the materials space for two-dimensional topological materials. We show the importance of detailed investigations of each machine learning component, leading to different results. Using recently created databases containing thousands of ab initio calculations of 2D materials, we train machine learning models capable of determining the electronic topology of materials, with an accuracy of over 90%. We can then generate and screen thousands of novel materials, efficiently predicting their topological character without the need for a priori structural knowledge. We discover 56 non-trivial materials, of which 17 novel insulating candidates for further investigation, for which we corroborate their topological properties with density functional theory calculations. This strategy is 10times more efficient than the trial-and-error approach while few orders of magnitude faster and is a proof of concept for guiding improved materials discovery search strategies.

The rapid discovery of materials is constrained by the lack of large, machine-readable datasets that couple performance metrics with structural context. Existing databases are either small, manually curated, or biased toward first principles results, leaving experimental literature underexploited. We present an agentic, large language model (LLM)-driven workflow that autonomously extracts thermoelectric and structural-properties from about 10,000 full-text scientific articles. The pipeline integrates dynamic token allocation, zeroshot multi-agent extraction, and conditional table parsing to balance accuracy against computational cost. Benchmarking on 50 curated papers shows that GPT-4.1 achieves the highest accuracy (F1 = 0.91 for thermoelectric properties and 0.82 for structural fields), while GPT-4.1 Mini delivers nearly comparable performance (F1 = 0.89 and 0.81) at a fraction of the cost, enabling practical large scale deployment. Applying this workflow, we curated 27,822 temperature resolved property records with normalized units, spanning figure of merit (ZT), Seebeck coefficient, conductivity, resistivity, power factor, and thermal conductivity, together with structural attributes such as crystal class, space group, and doping strategy. Dataset analysis reproduces known thermoelectric trends, such as the superior performance of alloys over oxides and the advantage of p-type doping, while also surfacing broader structure-property correlations. To facilitate community access, we release an interactive web explorer with semantic filters, numeric queries, and CSV export. This study delivers the largest LLM-curated thermoelectric dataset to date, provides a reproducible and cost-profiled extraction pipeline, and establishes a foundation for scalable, data-driven materials discovery beyond thermoelectrics.

A bilayer formed by stacking two distinct materials creates a moiré lattice, which can serve as a platform for novel electronic phases. In this work we study a unique example of such a system: the graphene-black phosphorus heterostructure (G/BP), which has been suggested to have an intricate band structure. Most notably, the valence band hosts a quasi-one-dimensional region in the Brillouin zone of high density of states, suggesting that various many-body electronic phases are likely to emerge. We derive an effective tight-binding model that reproduces this band structure, and explore the emergent broken-symmetry phases when interactions are introduced. Employing a mean-field analysis, we find that the favored ground-state exhibits a striped spin density wave (SDW) order, characterized by either one of two-fold degenerate wave-vectors that are tunable by gating. Further exploring the phase-diagram controlled by gate voltage and the interaction strength, we find that the SDW-ordered state undergoes a metal to insulator transition via an intermediate metallic phase which supports striped SDW correlations. Possible experimental signatures are discussed, in particular a highly anisotropic dispersion of the collective excitations which should be manifested in electric and thermal transport.

Tin oxide aerogels were synthesized using an epoxide-assisted technique and characterized with Fourier transform infrared, X-ray diffraction, and UV-Vis to study the effects of post-synthesis annealing and peroxide treatment. While bulk tin oxide exhibits an optical bandgap of 3.6 eV, its aerogel form often displays a larger apparent bandgap around 4.6 eV due to defects. Our study reveals that annealing induces a partial phase change from SnO_2 to SnO, but is ineffective in removing defects. Conversely, peroxide passivation effectively lowers the bandgap and disorder levels, suggesting that dangling bonds are the primary cause of the increased bandgap in tin oxide aerogels. These findings offer insights for optimizing the optical properties of tin oxide aerogels for applications like solar cells.

Atomically thin metallic chains serve as pivotal systems for studying quantum transport, with their conductance strongly linked to the orbital picture. Here, we report a non-monotonic electro-mechanical response in a gold-ferrocene junction, characterized by an unexpected conductance increase over a factor of ten upon stretching. This response is detected in the formation of ferrocene-assisted atomic gold chain in a mechanically controllable break junction at a cryogenic temperature. DFT based calculations show that tilting of molecules inside the chain modifies the orbital overlap and the transmission spectra, leading to such non-monotonic conductance evolution with stretching. This behavior, unlike typical flat conductance plateaus observed in metal atomic chains, pinpoints the unique role of conformational rearrangements during chain elongation. Our findings provide a deeper understanding of the role of orbital hybridization in transport properties and offer new opportunities for designing nanoscale devices with tailored electro-mechanical characteristics.

Artificial Neural Networks are computational network models inspired by signal processing in the brain. These models have dramatically improved the performance of many learning tasks, including speech and object recognition. However, today's computing hardware is inefficient at implementing neural networks, in large part because much of it was designed for von Neumann computing schemes. Significant effort has been made to develop electronic architectures tuned to implement artificial neural networks that improve upon both computational speed and energy efficiency. Here, we propose a new architecture for a fully-optical neural network that, using unique advantages of optics, promises a computational speed enhancement of at least two orders of magnitude over the state-of-the-art and three orders of magnitude in power efficiency for conventional learning tasks. We experimentally demonstrate essential parts of our architecture using a programmable nanophotonic processor.

Deep neural networks have made significant progress in the field of computer vision. Recent studies have shown that depth, width and shortcut connections of neural network architectures play a crucial role in their performance. One of the most advanced neural network architectures, DenseNet, has achieved excellent convergence rates through dense connections. However, it still has obvious shortcomings in the usage of amount of memory. In this paper, we introduce a new type of pruning tool, threshold, which refers to the principle of the threshold voltage in MOSFET. This work employs this method to connect blocks of different depths in different ways to reduce the usage of memory. It is denoted as ThresholdNet. We evaluate ThresholdNet and other different networks on datasets of CIFAR10. Experiments show that HarDNet is twice as fast as DenseNet, and on this basis, ThresholdNet is 10% faster and 10% lower error rate than HarDNet.

This position and survey paper identifies the emerging convergence of neuroscience, artificial general intelligence (AGI), and neuromorphic computing toward a unified research paradigm. Using a framework grounded in brain physiology, we highlight how synaptic plasticity, sparse spike-based communication, and multimodal association provide design principles for next-generation AGI systems that potentially combine both human and machine intelligences. The review traces this evolution from early connectionist models to state-of-the-art large language models, demonstrating how key innovations like transformer attention, foundation-model pre-training, and multi-agent architectures mirror neurobiological processes like cortical mechanisms, working memory, and episodic consolidation. We then discuss emerging physical substrates capable of breaking the von Neumann bottleneck to achieve brain-scale efficiency in silicon: memristive crossbars, in-memory compute arrays, and emerging quantum and photonic devices. There are four critical challenges at this intersection: 1) integrating spiking dynamics with foundation models, 2) maintaining lifelong plasticity without catastrophic forgetting, 3) unifying language with sensorimotor learning in embodied agents, and 4) enforcing ethical safeguards in advanced neuromorphic autonomous systems. This combined perspective across neuroscience, computation, and hardware offers an integrative agenda for in each of these fields.

Leveraging new data sources is a key step in accelerating the pace of materials design and discovery. To complement the strides in synthesis planning driven by historical, experimental, and computed data, we present an automated method for connecting scientific literature to synthesis insights. Starting from natural language text, we apply word embeddings from language models, which are fed into a named entity recognition model, upon which a conditional variational autoencoder is trained to generate syntheses for arbitrary materials. We show the potential of this technique by predicting precursors for two perovskite materials, using only training data published over a decade prior to their first reported syntheses. We demonstrate that the model learns representations of materials corresponding to synthesis-related properties, and that the model's behavior complements existing thermodynamic knowledge. Finally, we apply the model to perform synthesizability screening for proposed novel perovskite compounds.

Automatic generation of device-level analog circuit topologies remains a fundamental challenge in analog design automation. Recent transformer-based approaches have shown promise, yet they often suffer from limited functional controllability, memorization of training data, and the generation of electrically invalid circuits. We propose AnalogToBi, a device-level analog circuit topology generation framework that addresses these limitations. AnalogToBi enables explicit functional control via a circuit type token and adopts a bipartite graph-based circuit representation that decouples positional ordering from functional semantics, encouraging structural reasoning over sequence memorization. In addition, grammar-guided decoding enforces electrical validity during generation, while apply device renaming-based data augmentation improves generalization by increasing sequence diversity without altering circuit functionality. Experimental results show that AnalogToBi achieves 97.8% validity and 92.1% novelty, resulting in 89.9% valid and novel circuits under conditional generation, without human expert involvement. We further present that generated circuits can be automatically translated into SPICE netlists, and SPICE simulations confirm that AnalogToBi discovers high-quality analog topologies that outperform prior methods. For code and supplementary materials, see https://github.com/Seungmin0825/AnalogToBi

Front-end electronics equipped with high-speed digitizers are being used and proposed for future nuclear detectors. Recent literature reveals that deep learning models, especially one-dimensional convolutional neural networks, are promising when dealing with digital signals from nuclear detectors. Simulations and experiments demonstrate the satisfactory accuracy and additional benefits of neural networks in this area. However, specific hardware accelerating such models for online operations still needs to be studied. In this work, we introduce PulseDL-II, a system-on-chip (SoC) specially designed for applications of event feature (time, energy, etc.) extraction from pulses with deep learning. Based on the previous version, PulseDL-II incorporates a RISC CPU into the system structure for better functional flexibility and integrity. The neural network accelerator in the SoC adopts a three-level (arithmetic unit, processing element, neural network) hierarchical architecture and facilitates parameter optimization of the digital design. Furthermore, we devise a quantization scheme compatible with deep learning frameworks (e.g., TensorFlow) within a selected subset of layer types. We validate the correct operations of PulseDL-II on field programmable gate arrays (FPGA) alone and with an experimental setup comprising a direct digital synthesis (DDS) and analog-to-digital converters (ADC). The proposed system achieved 60 ps time resolution and 0.40% energy resolution at signal to noise ratio (SNR) of 47.4 dB.

The surface code family is a promising approach to implementing fault-tolerant quantum computations. Universal fault-tolerance requires error-corrected non-Clifford operations, in addition to Clifford gates, and for the former, it is imperative to experimentally demonstrate additional resources known as magic states. Another challenge is to efficiently embed surface codes into quantum hardware with connectivity constraints. This work simultaneously addresses both challenges by employing a qubit-efficient rotated heavy-hexagonal surface code for IBM quantum processors (ibm\_fez) and implementing the magic state injection protocol. Our work reports error thresholds for both logical bit- and phase-flip errors, of approx0.37% and approx0.31%, respectively, which are higher than the threshold values previously reported with traditional embedding. The post-selection-based preparation of logical magic states |H_Lrangle and |T_Lrangle achieve fidelities of 0.8806pm0.0002 and 0.8665pm0.0003, respectively, which are both above the magic state distillation threshold. Additionally, we report the minimum fidelity among injected arbitrary single logical qubit states as 0.8356pm0.0003. Our work demonstrates the potential for realising non-Clifford logical gates by producing high-fidelity logical magic states on IBM quantum devices.

Electronic band structure (BS) and crystal structure are the two complementary identifiers of solid state materials. While convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting quasiparticle dispersion (closely related to BS) from photoemission band mapping data is currently limited by the available computational methods. To cope with the growing size and scale of photoemission data, we develop a pipeline including probabilistic machine learning and the associated data processing, optimization and evaluation methods for band structure reconstruction, leveraging theoretical calculations. The pipeline reconstructs all 14 valence bands of a semiconductor and shows excellent performance on benchmarks and other materials datasets. The reconstruction uncovers previously inaccessible momentum-space structural information on both global and local scales, while realizing a path towards integration with materials science databases. Our approach illustrates the potential of combining machine learning and domain knowledge for scalable feature extraction in multidimensional data.

In the search for novel intermetallic ternary alloys, much of the effort goes into performing a large number of ab-initio calculations covering a wide range of compositions and structures. These are essential to build a reliable convex hull diagram. While density functional theory (DFT) provides accurate predictions for many systems, its computational overheads set a throughput limit on the number of hypothetical phases that can be probed. Here, we demonstrate how an ensemble of machine-learning spectral neighbor-analysis potentials (SNAPs) can be integrated into a workflow for the construction of accurate ternary convex hull diagrams, highlighting regions fertile for materials discovery. Our workflow relies on using available binary-alloy data both to train the SNAP models and to create prototypes for ternary phases. From the prototype structures, all unique ternary decorations are created and used to form a pool of candidate compounds. The SNAPs are then used to pre-relax the structures and screen the most favourable prototypes, before using DFT to build the final phase diagram. As constructed, the proposed workflow relies on no extra first-principles data to train the machine-learning surrogate model and yields a DFT-level accurate convex hull. We demonstrate its efficacy by investigating the Cu-Ag-Au and Mo-Ta-W ternary systems.

The most technologically consequential materials are often the rarest: they occupy narrow regions of chemical space, obey competing physical constraints, and appear only sparsely in existing databases. High-kappa dielectrics, high-Tc superconductors, and ferromagnetic insulators are to name a few. This scarcity fundamentally limits today's data-driven materials discovery, where machine-learning models excel at interpolation but struggle to generate genuinely new candidates. Here, we introduce DielecMIND, an artificial intelligence framework that reframes materials discovery as a reasoning-driven exploration instead of a database-screening problem. Using high-kappa dielectrics as a data-scarce and technologically stringent test case, DielecMIND combines large-language-model hypothesis generation for the first time with physics validated first-principles calculation to navigate chemical space beyond known compounds. Prior to our work, only 14 experimentally or computationally validated materials with kappa > 150 were known. Our framework discovers and validates 5 new such compounds, expanding this rare-materials class by a remarkable = 35% in a single study. Among them, we find that Ba2TiHfO6 exhibits a dielectric constant of 637, minimal loss at low optical frequencies, and stability up to 800 K. Beyond dielectrics, this work demonstrates a new paradigm for artificial-intelligence-guided discovery: one that generates a small number of physically grounded, experimentally plausible candidates yet measurably expands sparsely populated functional materials spaces. Thus, DielecMIND points toward a general strategy for discovering rare, high-impact functional materials where data scarcity has long constrained progress.

The hybridization gap in strained-layer InAs/InxGa1-xSb quantum spin Hall insulators (QSHIs) is significantly enhanced compared to binary InAs/GaSb QSHI structures, where the typical indium composition, x, ranges between 0.2 and 0.4. This enhancement prompts a critical question: to what extent can quantum wells (QWs) be strained while still preserving the fundamental QSHI phase? In this study, we demonstrate the controlled molecular beam epitaxial (MBE) growth of highly strained-layer QWs with an indium composition of x = 0.5. These structures possess a substantial compressive strain within the In0.5Ga0.5Sb QW. Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films, indicating coherent lattice structures and the absence of visible dislocations. Transport measurements further reveal that the QSHI phase in InAs/In0.5Ga0.5Sb QWs is robust and protected by time-reversal symmetry. Notably, the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field. This behavior is in agreement with the Z2 topological property predicted by the Bernevig-Hughes-Zhang (BHZ) model, confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.

Advances in graph machine learning (ML) have been driven by applications in chemistry as graphs have remained the most expressive representations of molecules. While early graph ML methods focused primarily on small organic molecules, recently, the scope of graph ML has expanded to include inorganic materials. Modelling the periodicity and symmetry of inorganic crystalline materials poses unique challenges, which existing graph ML methods are unable to address. Moving to inorganic nanomaterials increases complexity as the scale of number of nodes within each graph can be broad (10 to 10^5). The bulk of existing graph ML focuses on characterising molecules and materials by predicting target properties with graphs as input. However, the most exciting applications of graph ML will be in their generative capabilities, which is currently not at par with other domains such as images or text. We invite the graph ML community to address these open challenges by presenting two new chemically-informed large-scale inorganic (CHILI) nanomaterials datasets: A medium-scale dataset (with overall >6M nodes, >49M edges) of mono-metallic oxide nanomaterials generated from 12 selected crystal types (CHILI-3K) and a large-scale dataset (with overall >183M nodes, >1.2B edges) of nanomaterials generated from experimentally determined crystal structures (CHILI-100K). We define 11 property prediction tasks and 6 structure prediction tasks, which are of special interest for nanomaterial research. We benchmark the performance of a wide array of baseline methods and use these benchmarking results to highlight areas which need future work. To the best of our knowledge, CHILI-3K and CHILI-100K are the first open-source nanomaterial datasets of this scale -- both on the individual graph level and of the dataset as a whole -- and the only nanomaterials datasets with high structural and elemental diversity.

The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe orbitronic terahertz emission in the Ti and Mn materials. Through spin-orbit transition in the ferromagnetic layer, the generated orbital current can be converted to charge current in the Ti and Mn layers via the inverse orbital Hall effect. Furthermore, the inserted W layer provides an additional conversion of the orbital-charge current in the Ti and Mn layers, significantly enhancing the orbitronic terahertz emission. Moreover, the orbitronic terahertz emission can be manipulated by cooperating with the inverse orbital Hall effect and the inverse spin Hall effect in the different sample configurations. Our results not only discover the physical mechanism of condensed matter physics but also pave the way for designing promising spin-orbitronic devices and terahertz emitters.

Using large language models to interpret experimental evidence, design discriminating experiments and formulate well-supported mechanistic explanations remains a central challenge in materials research. Here we establish PSM-Bench, an 800-question benchmark developed by perovskite researchers to evaluate scientific reasoning in perovskite photovoltaics. We also introduce OpenPerov, an expert-informed language-model framework that learns from expert-calibrated evidence records reconstructed from 4,532 articles; these records link experimental strategies, controls and observations to mechanistic interpretations. Structured-evidence adaptation outperformed conventional question-answer training, and OpenPerov Flash ranked first among 13 closed-book systems. OpenPerov Pro raised Scientific Mastery further, from 87.6 to 89.1, by revising selected passages with retrieved evidence. On questions derived from subsequent studies, both models also outscored expert-authored answers. In an experimental test of self-assembled monolayer design, OpenPerov selected a K analogue that outperformed the Na analogue preferred by experts. Devices incorporating the selected contact reached a power conversion efficiency of 27.05% and retained 96.74% of their steady-state reference efficiency after 1,000 h of dark thermal ageing at 85 ^circC. These results show that reconstructed scientific reasoning provides an effective basis for building domain models that interpret experiments and inform materials design.

In this work, we propose and study a double Kondo lattice model which hosts robust superconductivity. The system consists of two identical Kondo lattice model, each with Kondo coupling J_K within each layer, while the localized spin moments are coupled together via an inter-layer on-site antiferromagnetic spin coupling J_perp. We consider the strong J_perp limit, wherein the local moments tend to form rung singlets and are thus gapped. However, the Kondo coupling J_K transmits the inter-layer entanglement between the local moments to the itinerant electrons. Consequently, the itinerant electrons experience a strong inter-layer antiferromangetic spin coupling and form strong inter-layer pairing, which is confirmed through numerical simulation in one dimensional system. Experimentally, the J_K rightarrow -infty limits of the model describes the recently found bilayer nickelate La_3Ni_2O_7, while the J_K>0 side can be realized in tetralayer optical lattice of cold atoms. Two extreme limits, J_K rightarrow -infty and J_K rightarrow +infty limit are shown to be simplified to a bilayer type II t-J model and a bilayer one-orbital t-J model, respectively. Thus, our double Kondo lattice model offers a unified framework for nickelate superconductor and tetralayer optical lattice quantum simulator upon changing the sign of J_K. We highlight both the qualitative similarity and the quantitative difference in the two sides of J_K. Finally, we discuss the possibility of a symmetric Kondo breakdown transition in the model with a symmetric pseudogap metal corresponding to the usual heavy Fermi liquid.

Inverse design of RF passive components from S-parameters is a high-dimensional, ill-posed problem, and prior generative approaches are limited to single-layer binary-metallization structures. This paper presents an inverse design approach that generates passive components from partial S-parameter inputs on an 8times8 mm board discretized at 64times64 pixels with sub-pixel grayscale metallization across 1-20 GHz. The framework generates two-layer copper layouts with vias, with hard physical constraints on feed locations enforced through annealed Langevin projection, flexible multi-modal conditioning on partial S-parameter specifications, port locations, dielectric properties, reference topology, and variable port placement. Candidate designs are generated in seconds, with surrogate-predicted S-parameters matching targets to within 0.77 pm 1.28 dB weighted mean absolute error. We validate the approach with two fabricated designs on RO4003C: a manufacturable alternative to a hairpin filter whose coupling gaps violate fabrication rules, and a combline bandpass filter designed from scratch given only target S-parameters.

The ability to discover new materials with desirable properties is critical for numerous applications from helping mitigate climate change to advances in next generation computing hardware. AI has the potential to accelerate materials discovery and design by more effectively exploring the chemical space compared to other computational methods or by trial-and-error. While substantial progress has been made on AI for materials data, benchmarks, and models, a barrier that has emerged is the lack of publicly available training data and open pre-trained models. To address this, we present a Meta FAIR release of the Open Materials 2024 (OMat24) large-scale open dataset and an accompanying set of pre-trained models. OMat24 contains over 110 million density functional theory (DFT) calculations focused on structural and compositional diversity. Our EquiformerV2 models achieve state-of-the-art performance on the Matbench Discovery leaderboard and are capable of predicting ground-state stability and formation energies to an F1 score above 0.9 and an accuracy of 20 meV/atom, respectively. We explore the impact of model size, auxiliary denoising objectives, and fine-tuning on performance across a range of datasets including OMat24, MPtraj, and Alexandria. The open release of the OMat24 dataset and models enables the research community to build upon our efforts and drive further advancements in AI-assisted materials science.

The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 kelvin, where the cooling power is orders of magnitude higher. Here, we tune up and operate spin qubits in silicon above 1 kelvin, with fidelities in the range required for fault-tolerant operation at such temperatures. We design an algorithmic initialisation protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies, and incorporate radio-frequency readout to achieve fidelities up to 99.34 per cent for both readout and initialisation. Importantly, we demonstrate a single-qubit Clifford gate fidelity of 99.85 per cent, and a two-qubit gate fidelity of 98.92 per cent. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for high-fidelity operation to be possible, surmounting a major obstacle in the pathway to scalable and fault-tolerant quantum computation.

The rising demand for energy-efficient edge AI systems (e.g., mobile agents/robots) has increased the interest in neuromorphic computing, since it offers ultra-low power/energy AI computation through spiking neural network (SNN) algorithms on neuromorphic processors. However, their efficient implementation strategy has not been comprehensively studied, hence limiting SNN deployments for edge AI systems. Toward this, we propose a design methodology to enable efficient SNN processing on commodity neuromorphic processors. To do this, we first study the key characteristics of targeted neuromorphic hardware (e.g., memory and compute budgets), and leverage this information to perform compatibility analysis for network selection. Afterward, we employ a mapping strategy for efficient SNN implementation on the targeted processor. Furthermore, we incorporate an efficient on-chip learning mechanism to update the systems' knowledge for adapting to new input classes and dynamic environments. The experimental results show that the proposed methodology leads the system to achieve low latency of inference (i.e., less than 50ms for image classification, less than 200ms for real-time object detection in video streaming, and less than 1ms in keyword recognition) and low latency of on-chip learning (i.e., less than 2ms for keyword recognition), while incurring less than 250mW of processing power and less than 15mJ of energy consumption across the respective different applications and scenarios. These results show the potential of the proposed methodology in enabling efficient edge AI systems for diverse application use-cases.

Inverse design of solid-state materials with desired properties represents a formidable challenge in materials science. Although recent generative models have demonstrated potential, their adoption has been hindered by limitations such as inefficiency, architectural constraints and restricted open-source availability. The representation of crystal structures using the SLICES (Simplified Line-Input Crystal-Encoding System) notation as a string of characters enables the use of state-of-the-art natural language processing models, such as Transformers, for crystal design. Drawing inspiration from the success of GPT models in generating coherent text, we trained a generative Transformer on the next-token prediction task to generate solid-state materials with targeted properties. We demonstrate MatterGPT's capability to generate de novo crystal structures with targeted single properties, including both lattice-insensitive (formation energy) and lattice-sensitive (band gap) properties. Furthermore, we extend MatterGPT to simultaneously target multiple properties, addressing the complex challenge of multi-objective inverse design of crystals. Our approach showcases high validity, uniqueness, and novelty in generated structures, as well as the ability to generate materials with properties beyond the training data distribution. This work represents a significant step forward in computational materials discovery, offering a powerful and open tool for designing materials with tailored properties for various applications in energy, electronics, and beyond.

The performance of advanced materials for extreme environments is underpinned by their microstructure, including the size and distribution of reinforcing phases. Chromium-based superalloys are a recently proposed alternative to conventional face-centred-cubic superalloys for high-temperature applications, such as Concentrated Solar Power, and their development requires efficient measurement of precipitate volume fraction and size distribution from electron microscopy images. Traditional fixed-threshold image processing is sensitive to background noise, generalises poorly across materials, and requires substantial manual measurement effort. To address these bottlenecks, this study proposes DT-SegNet, an end-to-end two-stage deep learning scheme based on YOLOv5 and SegFormer for object detection and segmentation in electron microscopy images. The approach combines the training efficiency of convolutional neural networks at the detection stage with the segmentation accuracy of a Vision Transformer. Numerical experiments show that DT-SegNet substantially outperforms state-of-the-art segmentation tools offered by Weka and ilastik across metrics including accuracy, precision, recall, and F1-score. The model provides a useful tool for alloy-development microstructure examinations and helps address the large datasets associated with high-throughput alloy development.

Exponential increases in scientific experimental data are outstripping the rate of progress in silicon technology. As a result, heterogeneous combinations of architectures and process or device technologies are increasingly important to meet the computing demands of future scientific experiments. However, the complexity of heterogeneous computing systems requires systematic modeling to understand performance. We present a model which addresses this need by framing key aspects of data collection pipelines and constraints, and combines them with the important vectors of technology that shape alternatives, computing metrics that allow complex alternatives to be compared. For instance, a data collection pipeline may be characterized by parameters such as sensor sampling rates, amount of data collected, and the overall relevancy of retrieved samples. Alternatives to this pipeline are enabled by hardware development vectors including advancing CMOS, GPUs, neuromorphic computing, and edge computing. By calculating metrics for each alternative such as overall F1 score, power, hardware cost, and energy expended per relevant sample, this model allows alternate data collection systems to be rigorously compared. To demonstrate this model's capability, we apply it to the CMS experiment (and planned HL-LHC upgrade) to evaluate and compare the application of novel technologies in the data acquisition system (DAQ). We demonstrate that improvements to early stages in the DAQ are highly beneficial, greatly reducing the resources required at later stages of processing (such as a 60% power reduction) and increasing the amount of relevant data retrieved from the experiment per unit power (improving from 0.065 to 0.31 samples/kJ) However, we predict further advances will be required in order to meet overall power and cost constraints for the DAQ.

The magnetization in a superconductor induced due to the inverse proximity effect is investigated in hybrid bilayers containing a superconductor and a ferromagnetic insulator or a strongly spin-polarized ferromagnetic metal. The study is performed within a quasiclassical Green function framework, wherein Usadel equations are solved with boundary conditions appropriate for strongly spin-polarized ferromagnetic materials. A comparison with recent experimental data is presented. The singlet to triplet conversion of the superconducting correlations as a result of the proximity effect with a ferromagnet is studied.

Materials research advances through accumulated experience - scripts that work, protocols that are trusted, warnings attached to failed calculations or experiments, and judgement that links a new question to an old result. This experience is essential for reproducibility and knowledge transfer, yet it is usually fragmented across notebooks, repositories, job logs and individual memory, and it is rarely portable across artificial-intelligence agents. Here we argue that a lifelong AI partner for materials science can be designed around persistent memory rather than around a particular agent implementation. We introduce a self-evolving memory framework that stores scientific experience as inspectable facts and executable skills, so that observations, failure boundaries, protocols and validation checks can be retrieved, revised and migrated across models. We evaluate the idea in three computational settings that expose different layers of materials-research competence. In 49 real-world materials-tool-use questions comprising 138 executable subtasks, memory nearly doubles GPT-5.2 task success without model-parameter updates. In elemental-solid equation-of-state calculations, memory converts a wavefunction-initialization failure into a pre-execution guardrail, improving outcomes from 22/1/4 to 25/2/0 Correct/Partial/Error and avoiding 92% of repeated errors. In 13 practical material simulation workflows, remembered skills and failure facts halve the aggregate trace burden (tokens) and reduce tool calls by over a factor of two by the third round, while preserving physically meaningful outputs in band-gap, phonon, vacancy and work-function analyses. These results show that agent memory can serve as a durable scientific asset; a portable, self-improving record of materials-research experience that outlives any single model or agent stack.

The prediction of material degradation is an important problem to solve in many industries. Environmental conditions, such as humidity and temperature, are important drivers of degradation processes, with corrosion being one of the most prominent ones. Quantum machine learning is a promising research field but suffers from well known deficits such as barren plateaus and measurement overheads. To address this problem, recent research has examined quantum reservoir computing to address time-series prediction tasks. Although a promising idea, developing circuits that are expressive enough while respecting the limited depths available on current devices is challenging. In classical reservoir computing, the onion echo state network model (ESN) [https://doi.org/10.1007/978-3-031-72359-9_9] was introduced to increase the interpretability of the representation structure of the embeddings. This onion ESN model utilizes a concatenation of smaller reservoirs that describe different time scales by covering different regions of the eigenvalue spectrum. Here, we use the same idea in the realm of quantum reservoir computing by simultaneously evolving smaller quantum reservoirs to better capture all the relevant time-scales while keeping the circuit depth small. We do this by modifying the rotation angles which we show alters the eigenvalues of the quantum evolution, but also note that modifying the number of mid-circuit measurements accomplishes the same goals of changing the long-term or short-term memory. This onion QRC outperforms a simple model and a single classical reservoir for predicting the degradation of aluminum alloys in different environmental conditions. By combining the onion QRC with an additional classical reservoir layer, the prediction accuracy is further improved.