Daily Papers

We study two-point functions of chiral primary operators in N=4 Super Yang-Mills in the presence of a half-BPS surface defect. Such a defect preserves only the diagonal combination of transverse rotations and of a global U(1) R-symmetry, so that the correlator depends on one additional cross-ratio and splits into sectors of definite angular charge. We solve the superconformal Ward identities and construct the bulk and defect superconformal blocks in all sectors, including the charged ones, which have no analogue for defects preserving transverse rotations. The solution contains a holomorphic sector, which we fix non-perturbatively by mapping it to a chiral algebra correlator. We extend this map to defects breaking transverse rotations, where it requires a redefinition of the modes of the two-dimensional current algebra, and use it to fix the charged sectors as well. We then use the defect dispersion relation to reconstruct the full correlator of the dimension-two chiral primary at leading order at large N and strong coupling. In the charged sectors long multiplets are absent and the answer is conjecturally exact in both N and the coupling; expanding it at weak coupling, we find perfect agreement with known results. From these correlators we extract infinitely many new pieces of defect CFT data. Finally, we reproduce the strong-coupling answer by an independent Witten diagram bootstrap on the rotation-invariant locus.

The interdiffusion coefficients are estimated either following the Wagner's method expressed with respect to the composition (mol or atomic fraction) normalized variable after considering the molar volume variation or the den Broeder's method expressed with respect to the concentration (composition divided by the molar volume) normalized variable. On the other hand, the relations for estimation of the intrinsic diffusion coefficients of components as established by van Loo and integrated diffusion coefficients in a phase with narrow homogeneity range as established by Wagner are currently available with respect to the composition normalized variable only. In this study, we have first derived the relation proposed by den Broeder following the line of treatment proposed by Wagner. Further, the relations for estimation of the intrinsic diffusion coefficients of the components and integrated interdiffusion coefficient are established with respect to the concentration normalized variable, which were not available earlier. The veracity of these methods is examined based on the estimation of data in Ni-Pd, Ni-Al and Cu-Sn systems. Our analysis indicates that both the approaches are logically correct and there is small difference in the estimated data in these systems although a higher difference could be found in other systems. The integrated interdiffusion coefficients with respect to the concentration (or concentration normalized variable) can only be estimated considering the ideal molar volume variation. This might be drawback in certain practical systems.

Motivated by the recent HAL QCD lattice results on the D - D^* potential at nearly physical point m_π=146.4 MeV, we theoretically examine effects from the two-pion exchange in (semi-)long-range parts of the DD^* system. We employ the framework of heavy-meson chiral perturbation theory with heavy-quark spin symmetry. The pion exchanges up to next-to-next-to-leading order (N^2LO) are taken into account. In order to separate the (semi-)long-range contributions, we apply the dispersion-relation method to one-loop diagrams. As a result, we find that the lattice data on the D - D^* potential in the regime of 0.5, {rm fm} lesssim r is reproduced by adjusting the unknown O(p^2) couplings. In particular, it turns out that contributions from isospin-independent N^2LO triangle diagrams play a central role in reproducing the lattice data of the form V^{DD^*}sim left({rm e}^{-m_πr}/rright)^2 in 1.0, {rm fm} lesssim rlesssim 2.0, {rm fm}. We also present predictions of other D^{(*)} - D^{(*)} potentials, where the similar two-pion exchange tail is predicted. Our findings provide useful information on the (semi-)long-range regime of the D - D^* potential focusing on two-pion exchanges.

Manufacturing wafers is an intricate task involving thousands of steps. Defect Pattern Recognition (DPR) of wafer maps is crucial for determining the root cause of production defects, which may further provide insight for yield improvement in wafer foundry. During manufacturing, various defects may appear standalone in the wafer or may appear as different combinations. Identifying multiple defects in a wafer is generally harder compared to identifying a single defect. Recently, deep learning methods have gained significant traction in mixed-type DPR. However, the complexity of defects requires complex and large models making them very difficult to operate on low-memory embedded devices typically used in fabrication labs. Another common issue is the unavailability of labeled data to train complex networks. In this work, we propose an unsupervised training routine to distill the knowledge of complex pre-trained models to lightweight deployment-ready models. We empirically show that this type of training compresses the model without sacrificing accuracy despite being up to 10 times smaller than the teacher model. The compressed model also manages to outperform contemporary state-of-the-art models.

This article presents a Monte Carlo study on bond percolation in distorted square and triangular lattices. The distorted lattices are generated by dislocating the sites from their regular positions. The amount and direction of the dislocations are random, but can be tuned by the distortion parameter α. Once the sites are dislocated, the bond lengths δ between the nearest neighbors change. A bond can only be occupied if its bond length is less than a threshold value called the connection threshold d. It is observed that when the connection threshold is greater than the lattice constant (assumed to be 1), the bond percolation threshold p_b always increases with distortion. For dle 1, no spanning configuration is found for the square lattice when the lattice is distorted, even very slightly. On the other hand, the triangular lattice not only spans for dle 1, it also shows a decreasing trend for p_b in the low-α range. These variation patterns have been linked with the average coordination numbers of the distorted lattices. A critical value d_c for the connection threshold has been defined as the value of d below which no spanning configuration can be found even after occupying all the bonds satisfying the connection criterion δle d. The behavior of d_c(α) is markedly different for the two lattices.

Defect inspection is paramount within the closed-loop manufacturing system. However, existing datasets for defect inspection often lack precision and semantic granularity required for practical applications. In this paper, we introduce the Defect Spectrum, a comprehensive benchmark that offers precise, semantic-abundant, and large-scale annotations for a wide range of industrial defects. Building on four key industrial benchmarks, our dataset refines existing annotations and introduces rich semantic details, distinguishing multiple defect types within a single image. Furthermore, we introduce Defect-Gen, a two-stage diffusion-based generator designed to create high-quality and diverse defective images, even when working with limited datasets. The synthetic images generated by Defect-Gen significantly enhance the efficacy of defect inspection models. Overall, The Defect Spectrum dataset demonstrates its potential in defect inspection research, offering a solid platform for testing and refining advanced models.

We revisit the geometric theory of defects. In the differential-geometric models of defects that have been adopted since the 1950s, dislocations have been associated with torsion, disclinations with the full curvature, and point defects with the first kind trace of non-metricity. The mainstream formulation exhibits several conceptual and technical shortcomings, most notably a hierarchy inconsistency, the non-exictence of a genuine metric formulation, and the potential emergence of Ostrogradsky-type instabilities. These issues have motivated us to develop a new framework, namely a generalized teleparallel geometric theory of defects. In our model, dislocations are identified with the trace of torsion, disclinations with the second kind trace of the non-metricity, and point defects with the first kind trace of the non-metricity. In addition, we retain the scalar part torsion as a free parameter for describing some possible unknown degrees of freedom in the theory of defects. The proposed geometric theory of defects is free from all of the aforementioned drawbacks and is therefore worthy of further investigation. To ensure the coherence and completeness of the discussion, we begin our analysis with elastic deformations, then summarize the existing metric-affine geometric theory of defects, and finally proceed to our original contribution, namely the new theory introduced here. We formulate the entire theory in Eulerian coordinates. Naturally, all results can be reformulated in Lagrangian coordinates as well. All analyses and formulae are expressed in the language of exterior algebra and are carried out in coordinate-independent orthonormal frames.

One way to model the strange metal phase of certain materials is via a holographic description in terms of probe D-branes in a Lifshitz spacetime, characterised by a dynamical exponent z. The background geometry is dual to a strongly-interacting quantum critical theory while the probe D-branes are dual to a finite density of charge carriers that can exhibit the characteristic properties of strange metals. We compute holographically the low-frequency and low-momentum form of the charge density and current retarded Green's functions in these systems for massless charge carriers. The results reveal a quasi-particle excitation when z<2, which in analogy with Landau Fermi liquids we call zero sound. The real part of the dispersion relation depends on momentum k linearly, while the imaginary part goes as k^2/z. When z is greater than or equal to 2 the zero sound is not a well-defined quasi-particle. We also compute the frequency-dependent conductivity in arbitrary spacetime dimensions. Using that as a measure of the charge current spectral function, we find that the zero sound appears only when the spectral function consists of a single delta function at zero frequency.

Developing effective visual inspection models remains challenging due to the scarcity of defect data. While image generation models have been used to synthesize defect images, producing highly realistic defects remains difficult. We propose DefectFill, a novel method for realistic defect generation that requires only a few reference defect images. It leverages a fine-tuned inpainting diffusion model, optimized with our custom loss functions incorporating defect, object, and attention terms. It enables precise capture of detailed, localized defect features and their seamless integration into defect-free objects. Additionally, our Low-Fidelity Selection method further enhances the defect sample quality. Experiments show that DefectFill generates high-quality defect images, enabling visual inspection models to achieve state-of-the-art performance on the MVTec AD dataset.

The presence of point defects such as vacancies plays an important role in material design. Here, we demonstrate that a graph neural network (GNN) model trained only on perfect materials can also be used to predict vacancy formation energies (E_{vac}) of defect structures without the need for additional training data. Such GNN-based predictions are considerably faster than density functional theory (DFT) calculations with reasonable accuracy and show the potential that GNNs are able to capture a functional form for energy predictions. To test this strategy, we developed a DFT dataset of 508 E_{vac} consisting of 3D elemental solids, alloys, oxides, nitrides, and 2D monolayer materials. We analyzed and discussed the applicability of such direct and fast predictions. We applied the model to predict 192494 E_{vac} for 55723 materials in the JARVIS-DFT database.

Point defects play a central role in driving the properties of materials. First-principles methods are widely used to compute defect energetics and structures, including at scale for high-throughput defect databases. However, these methods are computationally expensive, making machine-learning force fields (MLFFs) an attractive alternative for accelerating structural relaxations. Most existing MLFFs are based on graph neural networks (GNNs), which can suffer from oversmoothing and poor representation of long-range interactions. Both of these issues are especially of concern when modeling point defects. To address these challenges, we introduce the Accelerated Deep Atomic Potential Transformer (ADAPT), an MLFF that replaces graph representations with a direct coordinates-in-space formulation and explicitly considers all pairwise atomic interactions. Atoms are treated as tokens, with a Transformer encoder modeling their interactions. Applied to a dataset of silicon point defects, ADAPT achieves a roughly 33 percent reduction in both force and energy prediction errors relative to a state-of-the-art GNN-based model, while requiring only a fraction of the computational cost.

Previous works for PCB defect detection based on image difference and image processing techniques have already achieved promising performance. However, they sometimes fall short because of the unaccounted defect patterns or over-sensitivity about some hyper-parameters. In this work, we design a deep model that accurately detects PCB defects from an input pair of a detect-free template and a defective tested image. A novel group pyramid pooling module is proposed to efficiently extract features of a large range of resolutions, which are merged by group to predict PCB defect of corresponding scales. To train the deep model, a dataset is established, namely DeepPCB, which contains 1,500 image pairs with annotations including positions of 6 common types of PCB defects. Experiment results validate the effectiveness and efficiency of the proposed model by achieving 98.6% mAP @ 62 FPS on DeepPCB dataset. This dataset is now available at: https://github.com/tangsanli5201/DeepPCB.

Automatic visual inspection using machine learning plays a key role in achieving zero-defect policies in industry. Research on anomaly detection is constrained by the availability of datasets that capture complex defect appearances and imperfect imaging conditions, which are typical of production processes. Recent benchmarks indicate that most publicly available datasets are biased towards optimal imaging conditions, leading to an overestimation of their applicability in real-world industrial scenarios. To address this gap, we introduce the Industrial Screen Printing Anomaly Detection Dataset (ISP-AD). It presents challenging small and weakly contrasted surface defects embedded within structured patterns exhibiting high permitted design variability. To the best of our knowledge, it is the largest publicly available industrial dataset to date, including both synthetic and real defects collected directly from the factory floor. Beyond benchmarking recent unsupervised anomaly detection methods, experiments on a mixed supervised training strategy, incorporating both synthesized and real defects, were conducted. Experiments show that even a small amount of injected, weakly labeled real defects improves generalization. Furthermore, starting from training on purely synthetic defects, emerging real defective samples can be efficiently integrated into subsequent scalable training. Overall, our findings indicate that model-free synthetic defects can provide a cold-start baseline, whereas a small number of injected real defects refine the decision boundary for previously unseen defect characteristics. The presented unsupervised and supervised dataset splits are designed to emphasize research on unsupervised, self-supervised, and supervised approaches, enhancing their applicability to industrial settings.

Manufacturing wafers is an intricate task involving thousands of steps. Defect Pattern Recognition (DPR) of wafer maps is crucial to find the root cause of the issue and further improving the yield in the wafer foundry. Mixed-type DPR is much more complicated compared to single-type DPR due to varied spatial features, the uncertainty of defects, and the number of defects present. To accurately predict the number of defects as well as the types of defects, we propose a novel compact deformable convolutional transformer (DC Transformer). Specifically, DC Transformer focuses on the global features present in the wafer map by virtue of learnable deformable kernels and multi-head attention to the global features. The proposed method succinctly models the internal relationship between the wafer maps and the defects. DC Transformer is evaluated on a real dataset containing 38 defect patterns. Experimental results show that DC Transformer performs exceptionally well in recognizing both single and mixed-type defects. The proposed method outperforms the current state of the models by a considerable margin

Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive index appearing in small gap materials and vice-versa. Here, we conduct a first-principles high-throughput study on more than 4000 semiconductors (with a special focus on oxides). Our data confirm the general inverse trend between refractive index and band gap but interesting outliers are also identified. The data are then analyzed through a simple model involving two main descriptors: the average optical gap and the effective frequency. The former can be determined directly from the electronic structure of the compounds, but the latter cannot. This calls for further analysis in order to obtain a predictive model. Nonetheless, it turns out that the negative effect of a large band gap on the refractive index can counterbalanced in two ways: (i) by limiting the difference between the direct band gap and the average optical gap which can be realized by a narrow distribution in energy of the optical transitions and (ii) by increasing the effective frequency which can be achieved through either a high number of transitions from the top of the valence band to the bottom of the conduction or a high average probability for these transitions. Focusing on oxides, we use our data to investigate how the chemistry influences this inverse relationship and rationalize why certain classes of materials would perform better. Our findings can be used to search for new compounds in many optical applications both in the linear and non-linear regime (waveguides, optical modulators, laser, frequency converter, etc.).

In recent years, the deterioration of artificial materials used in structures has become a serious social issue, increasing the importance of inspections. Non-destructive testing is gaining increased demand due to its capability to inspect for defects and deterioration in structures while preserving their functionality. Among these, Laser Ultrasonic Visualization Testing (LUVT) stands out because it allows the visualization of ultrasonic propagation. This makes it visually straightforward to detect defects, thereby enhancing inspection efficiency. With the increasing number of the deterioration structures, challenges such as a shortage of inspectors and increased workload in non-destructive testing have become more apparent. Efforts to address these challenges include exploring automated inspection using machine learning. However, the lack of anomalous data with defects poses a barrier to improving the accuracy of automated inspection through machine learning. Therefore, in this study, we propose a method for automated LUVT inspection using an anomaly detection approach with a diffusion model that can be trained solely on negative examples (defect-free data). We experimentally confirmed that our proposed method improves defect detection and localization compared to general object detection algorithms used previously.

Diffusion transformers (DiT) have already achieved appealing synthesis and scaling properties in content recreation, e.g., image and video generation. However, scaling laws of DiT are less explored, which usually offer precise predictions regarding optimal model size and data requirements given a specific compute budget. Therefore, experiments across a broad range of compute budgets, from 1e17 to 6e18 FLOPs are conducted to confirm the existence of scaling laws in DiT for the first time. Concretely, the loss of pretraining DiT also follows a power-law relationship with the involved compute. Based on the scaling law, we can not only determine the optimal model size and required data but also accurately predict the text-to-image generation loss given a model with 1B parameters and a compute budget of 1e21 FLOPs. Additionally, we also demonstrate that the trend of pre-training loss matches the generation performances (e.g., FID), even across various datasets, which complements the mapping from compute to synthesis quality and thus provides a predictable benchmark that assesses model performance and data quality at a reduced cost.

Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.

Anomaly inspection plays an important role in industrial manufacture. Existing anomaly inspection methods are limited in their performance due to insufficient anomaly data. Although anomaly generation methods have been proposed to augment the anomaly data, they either suffer from poor generation authenticity or inaccurate alignment between the generated anomalies and masks. To address the above problems, we propose AnomalyDiffusion, a novel diffusion-based few-shot anomaly generation model, which utilizes the strong prior information of latent diffusion model learned from large-scale dataset to enhance the generation authenticity under few-shot training data. Firstly, we propose Spatial Anomaly Embedding, which consists of a learnable anomaly embedding and a spatial embedding encoded from an anomaly mask, disentangling the anomaly information into anomaly appearance and location information. Moreover, to improve the alignment between the generated anomalies and the anomaly masks, we introduce a novel Adaptive Attention Re-weighting Mechanism. Based on the disparities between the generated anomaly image and normal sample, it dynamically guides the model to focus more on the areas with less noticeable generated anomalies, enabling generation of accurately-matched anomalous image-mask pairs. Extensive experiments demonstrate that our model significantly outperforms the state-of-the-art methods in generation authenticity and diversity, and effectively improves the performance of downstream anomaly inspection tasks. The code and data are available in https://github.com/sjtuplayer/anomalydiffusion.

Diffusion models generate high-quality images but require dozens of forward passes. We introduce Distribution Matching Distillation (DMD), a procedure to transform a diffusion model into a one-step image generator with minimal impact on image quality. We enforce the one-step image generator match the diffusion model at distribution level, by minimizing an approximate KL divergence whose gradient can be expressed as the difference between 2 score functions, one of the target distribution and the other of the synthetic distribution being produced by our one-step generator. The score functions are parameterized as two diffusion models trained separately on each distribution. Combined with a simple regression loss matching the large-scale structure of the multi-step diffusion outputs, our method outperforms all published few-step diffusion approaches, reaching 2.62 FID on ImageNet 64x64 and 11.49 FID on zero-shot COCO-30k, comparable to Stable Diffusion but orders of magnitude faster. Utilizing FP16 inference, our model generates images at 20 FPS on modern hardware.

3D anomaly detection plays a crucial role in monitoring parts for localized inherent defects in precision manufacturing. Embedding-based and reconstruction-based approaches are among the most popular and successful methods. However, there are two major challenges to the practical application of the current approaches: 1) the embedded models suffer the prohibitive computational and storage due to the memory bank structure; 2) the reconstructive models based on the MAE mechanism fail to detect anomalies in the unmasked regions. In this paper, we propose R3D-AD, reconstructing anomalous point clouds by diffusion model for precise 3D anomaly detection. Our approach capitalizes on the data distribution conversion of the diffusion process to entirely obscure the input's anomalous geometry. It step-wisely learns a strict point-level displacement behavior, which methodically corrects the aberrant points. To increase the generalization of the model, we further present a novel 3D anomaly simulation strategy named Patch-Gen to generate realistic and diverse defect shapes, which narrows the domain gap between training and testing. Our R3D-AD ensures a uniform spatial transformation, which allows straightforwardly generating anomaly results by distance comparison. Extensive experiments show that our R3D-AD outperforms previous state-of-the-art methods, achieving 73.4% Image-level AUROC on the Real3D-AD dataset and 74.9% Image-level AUROC on the Anomaly-ShapeNet dataset with an exceptional efficiency.

As the globalization of semiconductor design and manufacturing processes continues, the demand for defect detection during integrated circuit fabrication stages is becoming increasingly critical, playing a significant role in enhancing the yield of semiconductor products. Traditional wafer map defect pattern detection methods involve manual inspection using electron microscopes to collect sample images, which are then assessed by experts for defects. This approach is labor-intensive and inefficient. Consequently, there is a pressing need to develop a model capable of automatically detecting defects as an alternative to manual operations. In this paper, we propose a method that initially employs a pre-trained VAE model to obtain the fault distribution information of the wafer map. This information serves as guidance, combined with the original image set for semi-supervised model training. During the semi-supervised training, we utilize a teacher-student network for iterative learning. The model presented in this paper is validated on the benchmark dataset WM-811K wafer dataset. The experimental results demonstrate superior classification accuracy and detection performance compared to state-of-the-art models, fulfilling the requirements for industrial applications. Compared to the original architecture, we have achieved significant performance improvement.

The goal of this work is a scientifically justified choice of efficient technological parameters of anodic bonding of silicon to glass, ensuring a minimum level of residual stresses. The relevance of this dissertation is determined by the continuous efforts to reduce the negative effects of the joint use of dissimilar materials in electronic devices. Theoretical and practical results: the temperature dependence of the true values of the coefficient of thermal expansion of popular glass brands in the temperature range from minus 100 °C to 500 °C were obtained; the ratio of thicknesses of silicon and glass that minimizes residual stress on the silicon surface was calculated; the technique of minimizing the residual stresses in silicon anodically bonded to glass was developed. Results of this research are applicable to MEMS devices design and simulations. The first chapter provides the analysis of the current state of research in the field of anodic bonding technology application. The second chapter is devoted to the experimental study of temperature dependence of the linear thermal expansion coefficient of the glass. Thermomechanical properties and composition of the following glass brands: LK5, Schott Borofloat 33, Corning 7740, Hoya SD-2 were measured. The third chapter describes the existing models of estimating the residual stresses in the silicon-glass bonds. Two models based on a theory of strength of materials and the classical lamination theory with an additional temperature dependence of coefficients of thermal expansion are proposed for further use. Residual stresses in silicon-glass bonds are estimated with these models and data from the preceding chapter. The fourth chapter describes the experiments carried out to confirm claims from the previous chapters. The proposed technique of minimizing residual stresses is described as steps for a device designer.

The chips contained in any electronic device are manufactured over circular silicon wafers, which are monitored by inspection machines at different production stages. Inspection machines detect and locate any defect within the wafer and return a Wafer Defect Map (WDM), i.e., a list of the coordinates where defects lie, which can be considered a huge, sparse, and binary image. In normal conditions, wafers exhibit a small number of randomly distributed defects, while defects grouped in specific patterns might indicate known or novel categories of failures in the production line. Needless to say, a primary concern of semiconductor industries is to identify these patterns and intervene as soon as possible to restore normal production conditions. Here we address WDM monitoring as an open-set recognition problem to accurately classify WDM in known categories and promptly detect novel patterns. In particular, we propose a comprehensive pipeline for wafer monitoring based on a Submanifold Sparse Convolutional Network, a deep architecture designed to process sparse data at an arbitrary resolution, which is trained on the known classes. To detect novelties, we define an outlier detector based on a Gaussian Mixture Model fitted on the latent representation of the classifier. Our experiments on a real dataset of WDMs show that directly processing full-resolution WDMs by Submanifold Sparse Convolutions yields superior classification performance on known classes than traditional Convolutional Neural Networks, which require a preliminary binning to reduce the size of the binary images representing WDMs. Moreover, our solution outperforms state-of-the-art open-set recognition solutions in detecting novelties.

Shrinking pattern dimensions leads to an increased variety of defect types in semiconductor devices. This has spurred innovation in patterning approaches such as Directed self-assembly (DSA) for which no traditional, automatic defect inspection software exists. Machine Learning-based SEM image analysis has become an increasingly popular research topic for defect inspection with supervised ML models often showing the best performance. However, little research has been done on obtaining a dataset with high-quality labels for these supervised models. In this work, we propose a method for obtaining coherent and complete labels for a dataset of hexagonal contact hole DSA patterns while requiring minimal quality control effort from a DSA expert. We show that YOLOv8, a state-of-the-art neural network, achieves defect detection precisions of more than 0.9 mAP on our final dataset which best reflects DSA expert defect labeling expectations. We discuss the strengths and limitations of our proposed labeling approach and suggest directions for future work in data-centric ML-based defect inspection.

The origin of a chemical reaction between two reactant atoms is associated to the activation energy, with the assumption that, high-energy collisions between these atoms, are the ones that overcome the activation energy. Here, we (i) show that a stronger attractive van der Waals (vdW) and electron-ion Coulomb interactions between two polarized atoms are responsible to initiate a chemical reaction, either before or after the collision. We derive this stronger vdW attraction formula exactly using the quasi one-dimensional Drude model within the ionization energy theory and the energy-level spacing renormalization group method. Along the way, we (ii) expose the precise physical mechanism responsible for the existence of a stronger vdW interaction for both long and short distances, and also show how to technically avoid the electron-electron Coulomb repulsion between polarized electrons from these two reactant atoms. Finally, we properly and correctly associate the existence of this stronger attraction to Ramachandran's 'normal limits' (distance shorter than what is allowed by the standard vdW bond) between chemically nonbonded atoms.

A model to investigate Thermally Stimulated Depolarization Current (TSDC) peak parameters using the dipole-dipole interaction concept is proposed by the author in this work. The proposed model describe the (TSDC) peak successfully since it gives a significant peak parameters (i.e. Activation energy (E) and the per-exponential factor (\tau_0) in addition to the dipole-dipole interaction strength parameter (di). Application of this model to determine the peak parameters of polyvinyl chloride(PVC) polymer is presented . The results show how the model fit the experimental thermal sampling data. Finally the results are compared to the well know techniques; the initial rise method (IR), the half width method (HW) in addition to the Cowell and Woods analysis.