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SubscribeAsymptotic characterisation of localised defect modes: Su-Schrieffer-Heeger and related models
Motivated by topologically protected states in wave physics, we study localised eigenmodes in one-dimensional periodic media with defects. The Su-Schrieffer-Heeger model (the canonical example of a one-dimensional system with topologically protected localised defect states) is used to demonstrate the method. Our approach can be used to describe two broad classes of perturbations to periodic differential problems: those caused by inserting a finite-sized piece of arbitrary material and those caused by creating an interface between two different periodic media. The results presented here characterise the existence of localised eigenmodes in each case and, when they exist, determine their eigenfrequencies and provide concise analytic results that quantify the decay rate of these modes. These results are obtained using both high-frequency homogenisation and transfer matrix analysis, with good agreement between the two methods.
ADAPT: Lightweight, Long-Range Machine Learning Force Fields Without Graphs
Point defects play a central role in driving the properties of materials. First-principles methods are widely used to compute defect energetics and structures, including at scale for high-throughput defect databases. However, these methods are computationally expensive, making machine-learning force fields (MLFFs) an attractive alternative for accelerating structural relaxations. Most existing MLFFs are based on graph neural networks (GNNs), which can suffer from oversmoothing and poor representation of long-range interactions. Both of these issues are especially of concern when modeling point defects. To address these challenges, we introduce the Accelerated Deep Atomic Potential Transformer (ADAPT), an MLFF that replaces graph representations with a direct coordinates-in-space formulation and explicitly considers all pairwise atomic interactions. Atoms are treated as tokens, with a Transformer encoder modeling their interactions. Applied to a dataset of silicon point defects, ADAPT achieves a roughly 33 percent reduction in both force and energy prediction errors relative to a state-of-the-art GNN-based model, while requiring only a fraction of the computational cost.
Creation of single vacancies in hBN with electron irradiation
Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.
Large-Scale Universal Defect Generation: Foundation Models and Datasets
Existing defect/anomaly generation methods often rely on few-shot learning, which overfits to specific defect categories due to the lack of large-scale paired defect editing data. This issue is aggravated by substantial variations in defect scale and morphology, resulting in limited generalization, degraded realism, and category consistency. We address these challenges by introducing UDG, a large-scale dataset of 300K normal-abnormal-mask-caption quadruplets spanning diverse domains, and by presenting UniDG, a universal defect generation foundation model that supports both reference-based defect generation and text instruction-based defect editing without per-category fine-tuning. UniDG performs Defect-Context Editing via adaptive defect cropping and structured diptych input format, and fuses reference and target conditions through MM-DiT multimodal attention. A two-stage training strategy, Diversity-SFT followed by Consistency-RFT, further improves diversity while enhancing realism and reference consistency. Extensive experiments on MVTec-AD and VisA show that UniDG outperforms prior few-shot anomaly generation and image insertion/editing baselines in synthesis quality and downstream single- and multi-class anomaly detection/localization. Code will be available at https://github.com/RetoFan233/UniDG.
Hadronic light-by-light contribution to (g-2)_μ from lattice QCD with SU(3) flavor symmetry
We perform a lattice QCD calculation of the hadronic light-by-light contribution to (g-2)_μ at the SU(3) flavor-symmetric point m_π=m_Ksimeq 420,MeV. The representation used is based on coordinate-space perturbation theory, with all QED elements of the relevant Feynman diagrams implemented in continuum, infinite Euclidean space. As a consequence, the effect of using finite lattices to evaluate the QCD four-point function of the electromagnetic current is exponentially suppressed. Thanks to the SU(3)-flavor symmetry, only two topologies of diagrams contribute, the fully connected and the leading disconnected. We show the equivalence in the continuum limit of two methods of computing the connected contribution, and introduce a sparse-grid technique for computing the disconnected contribution. Thanks to our previous calculation of the pion transition form factor, we are able to correct for the residual finite-size effects and extend the tail of the integrand. We test our understanding of finite-size effects by using gauge ensembles differing only by their volume. After a continuum extrapolation based on four lattice spacings, we obtain a_μ^{rm hlbl} = (65.4pm 4.9 pm 6.6)times 10^{-11}, where the first error results from the uncertainties on the individual gauge ensembles and the second is the systematic error of the continuum extrapolation. Finally, we estimate how this value will change as the light-quark masses are lowered to their physical values.
