ICDAR 2026 Competition on Information Extraction from Atomic Layer Deposition/Etching (ALD/E) Scientific Figures
Paper • 2607.26848 • Published • 4
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Fig.1. t sample holder. $\mathrm{SiO}_2$ particles are pressed into a tungsten grid and positioned in the infrared beam. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig1 | atomic-layer-deposition/experimental-usecase/12/fig1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
"authors": "J.W. Klaus, \nS.J. Ferro, \nS.M. George*",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig1.jp... | train/atomic-layer-deposition/experimental-usecase/12/images/fig1.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig1.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig1 | 1,048 | 845 | JPEG | d16b0dc9ad6f1a43765331ca4d638aacd55d23800f48901d284e6565e8b1f9d8 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 10. Tungsten film thickness deposited at $425 \mathrm{K}$ versus number of AB cycles. The $\mathrm{WF}_6$ and $\mathrm{Si}_2\mathrm{H}_6$ reactant exposures of nine pulses and 40 pulses, respectively, were sufficient for complete half-reactions. The least squares linear fit to the data yields a tungsten grow... | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_10 | atomic-layer-deposition/experimental-usecase/12/fig_10 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The line chart shows a linear relationship between the number of AB cycles and the thickness of a tungsten film deposited at 425 K, confirming self-limiting Atomic Layer Deposition (ALD) behavior. A least squares fit gives a tungsten growth rate of 2.5 Å/cycle using reactant e... | [
{
"panel_id": "a",
"data": "| AB Cycles | Tungsten Film Thickness (Å) |\n|---|---|\n| 0 | 0 |\n| 10 | 25 |\n| 20 | 50 |\n| 30 | 75 |\n| 40 | 100 |\n| 50 | 125 |\n| 60 | 150 |\n| 70 | 175 |\n| 80 | 200 |"
}
] | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "Does the thickness of the tungsten film increase by exactly 2.5 Å each time one complete AB cycle is performed?",
"answer_type": "Paragraph",
"answer": "Yes. The linear chart shows a consistent, repeatable increase of 2.5 Å per... | [
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"y": 1,
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_10.... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_10.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_10.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_10 | 594 | 581 | JPEG | 0f04ce1c4e14012a05992cff50250d19cf171ed2c666e9739fb0ab6dbf10123c | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 11. Tungsten film thickness deposited after three AB cycles versus substrate temperature. The $\mathrm{WF}_6$ and $\mathrm{Si}_2\mathrm{H}_6$ reactant exposures at each temperature were sufficient for complete half-reactions. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_11 | atomic-layer-deposition/experimental-usecase/12/fig_11 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
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"panel_id": "a",
"summary": "The line graph represents the tungsten film thickness deposited after 3 AB cycles against substrate temperature (300–600 K). The curve shows a distinct peak: thickness initially rises with temperature, reaches a maximum near 425 K, and then saturates at higher temperatures. WF... | [
{
"panel_id": "a",
"data": "| Temperature (K) | Tungsten Film Thickness (Å) |\n|---|---|\n| 300 | 3.4 |\n| 400 | 6.7 |\n| 500 | 7.5 |\n| 600 | 7.8 |"
}
] | [
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"panel_id": "a",
"question_type": "Process-Oriented",
"question": "Does the constant tungsten deposition rate observed above 425 K imply that the growth mechanism shifts from ALD to CVD?",
"answer_type": "Paragraph",
"answer": "No. FTIR confirms the reactions remain self-limiting, surface-sat... | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_11 | 600 | 609 | JPEG | dab9ccea58557a79f71245107afc6b8b75501b68734c468d3819ed59e543cdec | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 12. Atomic force microscope image of a $\sim 320\mathrm{A}$ thick tungsten film deposited at $425\mathrm{K}$ after 125 AB cycles. The $\mathrm{WF}_6$ and $\mathrm{Si}_2\mathrm{H}_6$ reactant exposures were sufficient for complete half-reactions. The light-to-dark range is $25\mathrm{\AA}$ | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_12 | atomic-layer-deposition/experimental-usecase/12/fig_12 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_12.... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_12.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_12.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_12 | 650 | 342 | JPEG | d4b9b612c83f0a5c0e7cad08214bd57cb131e40fa8a7541d0b43835c125187dd | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 2. FTIR difference spectra recorded after the reaction of $\mathrm{Si}_2\mathrm{H}_6$ with hydroxylated $\mathrm{SiO}_2$ particles at $650~\mathrm{K}$ . The negative absorbance features are consistent with removal of the $\mathrm{SiOH^{*}}$ species. The positive absorbance features correspond to the deposit... | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_2 | atomic-layer-deposition/experimental-usecase/12/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The Fourier-Transform Infrared Spectroscopy(FTIR) spectra chart spectrum shows how disilane (Si₂H₆)acts with hydroxylated silica at 650 K. The negative peak near 3750 cm⁻¹ indicates that surface Si–OH groups are being consumed. The positive peaks—around 2250 cm⁻¹ (Si–H stretc... | [
{
"panel_id": "a",
"data": "| Frequency (cm⁻¹) | Infrared Absorbance | Remark |\n|----------------|----------------------|---------|\n| 3750 | -0.15 | SiO-H Stretch |\n| 3000 | 0.004 | -|\n| 2250 | 0.06 | - |\n| 2000 | 0.35... | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "List the sequence of chemical events occurring on the silica surface during the 30-minute exposure as revealed by the difference spectrum.",
"answer_type": "Paragraph",
"answer": "Introduction of Si₂H₆ into the reactor.\nReacti... | [
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"x": 1,
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
"authors": "J.W. Klaus, \nS.J. Ferro, \nS.M. George*",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_2.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_2.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_2.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_2 | 638 | 653 | JPEG | 93f15ec8184782a2334b69373b33322bd9d7bdee9fb3822adcfe97a25b95114d | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 3. (A) Experimental schematic of vacuum apparatus for in situ spectroscopic ellipsometry studies on Si(100) samples. (B) Spectroscopic ellipsometry is conducted in the central deposition chamber using a rotating analyzer detector. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_3 | atomic-layer-deposition/experimental-usecase/12/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_3 | 1,000 | 1,006 | JPEG | 9b39037c9fff489f69ce8b948a3a24da4994a1887d5eeb6f3011dee0de534e8a | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 4. FTIR difference spectra recorded versus $\mathrm{WF}_6$ exposure during the $\mathrm{WF}_6$ half-reaction at $425\mathrm{K}$ . Each spectrum is referenced to the initial surface that had received a saturation $\mathrm{Si}_2\mathrm{H}_6$ exposure. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_4 | atomic-layer-deposition/experimental-usecase/12/fig_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"panel_id": "a",
"summary": "The figure shows FTIR difference spectra for the tungsten hexafluoride (WF₆) half-reaction at 425 K, referenced to a surface initially saturated with disilane (Si₂H₆). In this label, negative absorbance features in the Si–H stretch region (approximately 2000–2500 cm⁻¹) indicat... | [
{
"panel_id": "a",
"data": "|Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\n|----------------|-----------------------|---------|\n| 2500 | ~0.04 | 10 mTorr, 1 min |\n| 2500 | ~0.009 | 50 mTorr, 1 min |\n| 2500 | ~-0.03 | 250 mT... | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "Based on the spectral changes in the left and right panels, list the chemical exchange occurring during this half-reaction step.",
"answer_type": "Paragraph",
"answer": "Exposure of the Si2H6-terminated surface to WF₆ gas.\n\nC... | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_4 | 522 | 697 | JPEG | 7e5d82391087363560bb35baf95ff24d4a5a939ae07f20c13d134ee6259d15fd | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 5. Normalized integrated absorbances of the W-F stretching vibration at $\sim 680~\mathrm{cm^{-1}}$ and the $\mathrm{Si - H}$ stretching vibrations at 2115 and $2275~\mathrm{cm^{-1}}$ versus $\mathrm{WF}_6$ exposure during the $\mathrm{WF}_6$ half-reaction at $425\mathrm{K}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_5 | atomic-layer-deposition/experimental-usecase/12/fig_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "multiple scatter plot"
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{
"panel_id": "a",
"summary": "This mulitple line plot represents the normalized, integrated absorbance of key IR vibrations (W–F stretch and Si–H stretches) against the total WF₆ exposure (Pressure * Time) during the WF₆ half-reaction at 425 K. It shows the Si–H signal decaying and the W–F signal growing a... | [
{
"panel_id": "a",
"data": "| WF<sub>6</sub> Exposure (Torr·min) | Normalized Integrated Absorbance | Stretch |\n|-----------------------------------|----------------------------------|---------------|\n| 0.0 | 0.0 | W–F Stretch |\n| 0.0 | 0.0 | Si–H Stretch |\n| 0.1 | 0.9 | W–F Stretch |\n| 0.1 | ... | [
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"panel_id": "a",
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"answer_type": "Paragraph",
"answer": "Normalized integrated absorbance is a measure of the total area under an FTIR absorption ... | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
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"doi": null,
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_5.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_5.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_5.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_5 | 600 | 581 | JPEG | 841faa92a4f9945fa27694499581b9817dd445b12852d5cc27def86e0f38d093 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 6. FTIR difference spectra recorded versus $\mathrm{Si}_2\mathrm{H}_6$ exposure during the $\mathrm{Si}_2\mathrm{H}_6$ half-reaction at $425~\mathrm{K}$ . Each spectrum is referenced to the initial surface that had received a saturation $\mathrm{WF}_6$ exposure. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_6 | atomic-layer-deposition/experimental-usecase/12/fig_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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{
"panel_id": "a",
"summary": "The figure shows FTIR difference spectra for the disilane (Si₂H₆) half-reaction at 425 K, referenced to a WF₆-saturated surface. In this label, positive IR absorbance in the Si–H stretch region (approximately 2100–2250 cm⁻¹) confirms the deposition of silicon hydride species. ... | [
{
"panel_id": "a",
"data": "| Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\n|----------------|----------------------|-------|\n| 2500 | 0.03 | 10 mTorr, 1 min |\n| 2500 | -0.01 | 40 mTorr, 1 min |\n| 2500 | -0.07 | 100 mTorr, 2 min |\n| 2250 ... | [
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"question": "To obtain the bottom spectrum (100 mTorr, 2 min), what must the two immediately preceding experimental steps have been? State the purpose of the 2-minute exposure time versus the 1-minute times used for other pressures.",
"answer_t... | [
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_6.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_6.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_6.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_6 | 466 | 636 | JPEG | 89cb3777d4bada0ba685d9b4835906500b4e23c8e6550ba22dd7c87658ae0489 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 7. Normalized integrated absorbances of the W-F stretching vibration at $\sim 680 \mathrm{cm}^{-1}$ and the $\mathrm{Si - H}$ stretching vibrations at 2115 and $2275 \mathrm{cm}^{-1}$ versus $\mathrm{Si}_2\mathrm{H}_6$ exposure during the $\mathrm{Si}_2\mathrm{H}_6$ half-reaction at $425 \mathrm{K}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_7 | atomic-layer-deposition/experimental-usecase/12/fig_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
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"panel_id": "a",
"summary": "This mulitple line plot represents the normalized, integrated absorbance of key IR vibrations (W–F stretch and Si–H stretches) against the total Si₂H₆ exposure during the WF₆ half-reaction at 425 K. It shows the W–F signal decaying and the Si–H signal growing as exposure incre... | [
{
"panel_id": "a",
"data": "| Si₂H₆ Exposure (Torr min) | Normalized Integrated Absorbance | Stretch |\n|---|---|-----|\n| 0.0 | 0.0 | W-F Stretch |\n| 0.0 | 0.0 | Si-H Stretch |\n| 0.1 | 0.04 | W-F Stretch |\n| 0.1 | 0.8 | Si-H Stretch |\n| 0.2 | 0.007 | W-F Stretch |\n| 0.2 | 0.9 | Si-H Stretch |\n| 0.3 |... | [
{
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"question": "What control mechanism does the plateau at exposures >0.3 Torr·min demonstrate?",
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"answer": "The plateau indicates a self-limiting control mechanism, a hallmark of ALD. Once the reactive Si-H surface s... | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
"authors": "J.W. Klaus, \nS.J. Ferro, \nS.M. George*",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_7.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_7.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_7.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_7 | 600 | 586 | JPEG | 7491f6e170ee23f7f950aefdf68964bd25d9ebbe7afc51529c5eb8f323bf8e50 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 8. Tungsten film thickness deposited after three AB cycles versus number of $\mathrm{WF}_6$ pulses at $425 \mathrm{K}$ . The $\mathrm{Si}_2\mathrm{H}_6$ exposure of $40 \mathrm{Si}_2\mathrm{H}_6$ pulses during each AB cycle was sufficient for a complete $\mathrm{Si}_2\mathrm{H}_6$ half-reaction. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_8 | atomic-layer-deposition/experimental-usecase/12/fig_8 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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{
"panel_id": "a",
"summary": "The line plot shows the tungsten film thickness obtained after three AB cycles as a function of the number of WF₆ pulses at 425 K. The thickness reaches saturation after about 10 WF₆ pulses, indicating that additional pulses do not increase growth. The data also confirms that ... | [
{
"panel_id": "a",
"data": "| Number of WF6 Pulses | Tungsten Film Thickness (Å) |\n|---|---|\n| 0 | 0 |\n| 1 | 3 |\n| 5 | 7 |\n| 10 | 7.2 |\n| 15 | 7.2 |\n| 20 | 7.2 |\n| 25 | 6.5 |\n| 30 | 7.2 |\n| 40 | 7.2 |\n| 50 | 7.2 |"
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"panel_id": "a",
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"question": "Based on the plot, identify the saturation threshold. If you were programming the ALD sequencer, what is the minimum safe pulse count you would set?",
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"answer": "To account for minor process variatio... | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_8.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_8.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_8.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_8 | 600 | 609 | JPEG | 4416339a5a164def601a15143b0bd86e76c005bf72af69681c9c27e054aec64b | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 9. Tungsten film thickness deposited after three AB cycles versus number of $\mathrm{Si}_2\mathrm{H}_6$ pulses at $425 \mathrm{K}$ . The $\mathrm{WF}_6$ exposure of nine $\mathrm{WF}_6$ pulses during each AB cycle was sufficient for a complete $\mathrm{WF}_6$ half-reaction. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_9 | atomic-layer-deposition/experimental-usecase/12/fig_9 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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{
"panel_id": "a",
"summary": "This line chart represents the tungsten(W) film thickness after 3 ALD- AB cycles as a function of the number of Si₂H₆ pulses per cycle (B-step), while the WF₆ exposure (A-step) is held constant at 9 pulses per cycle. It demonstrates that film growth requires a minimum number ... | [
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"panel_id": "a",
"data": "| Number of Si₂H₆ Pulses | Tungsten Film Thickness (Å) |\n|---|---|\n| 0 | 0 |\n| 4 | 5 |\n| 12 | 7.5 |\n| 24 | 8.1 |\n| 48 | 7.4 |\n| 60 | 8.1 |"
}
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"panel_id": "a",
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"answer_type": "Paragraph",
"answer": "WF₆ Pulse\n\nPurge\n\n... | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_9.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_9.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_9.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_9 | 600 | 603 | JPEG | 8cbaa089799ee74d9375dffd2f4cc61dfa62031c8a346286999a72282fce7752 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 1. Dependence of the Si content in the $\mathrm{Ti - Si - N}$ films and deposition thickness per cycle on the $\mathrm{SiH_4}$ partial pressure for the films grown on $\mathrm{SiO_2}$ at the substrate temperature of $180^{\circ}\mathrm{C}$ . $\mathrm{Ti - Si - N}$ films were grown by sequential supply of ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__13__fig_1 | atomic-layer-deposition/experimental-usecase/13/fig_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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"panel_id": "a",
"summary": "The chart shows the relationship between the Si content and the film thickness, and the partial pressure of SiH4."
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"data": "| Partial pressure of SiH₄ [Pa] | Si contents [at.%] | Film thickness per cycle [nm/cycle] |\n|---|---|---|\n| 0.1 | 17 | 0.25 |\n| 1 | 15 | 0.23 |\n| 10 | 18 | 0.21 |\n| 100 | 19 | 0.19 |"
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"publication_title": "Metal-organic atomic-layer deposition of titanium-silicon-nitride films $\\odot$",
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FIG. 2. Dependence of the Si content in the $\mathrm{Ti - Si - N}$ films and deposition thickness per cycle on the $\mathrm{SiH_4 / NH_3}$ ratio for the films grown on $\mathrm{SiO_2}$ at the substrate temperature of $180^{\circ}\mathrm{C}$ . $\mathrm{SiH_4}$ and $\mathrm{NH_3}$ were simultaneously supplied ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__13__fig_2 | atomic-layer-deposition/experimental-usecase/13/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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"panel_id": "a",
"summary": "The chart shows the relation between SiH₄/NH₃ ratio and Si content and film thickness per cycle. As the ratio increases, the Si content increases until it reaches a plateau, while the film thickness per cycle decreases."
}
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"panel_id": "a",
"data": "| SiH₄/NH₃ ratio | Si Contents [at.%] | Film thickness per cycle [nm/cycle] |\n|---|---|---|\n| 10⁻² | 1 | 0.38 |\n| 10⁻¹ | 18 | 0.28 |\n| 10⁰ | 23 | 0.19 |\n| 10¹ | 23 | 0.01 |"
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FIG. 3. $1\mathrm{kHz}C - V$ measurements for MOS capacitors, $\mathrm{Cu(100nm) / 10nm}$ $\mathrm{Ti - Si - N}$ barrier layer (or without the barrier layer) $\mathrm{SiO_2}$ $100\mathrm{nm}) / N$ -type Si. a and b are the $C - V$ profiles for the MOS capacitor without the barrier layer before and after thermal... | sci_imageminer__atomic_layer_deposition__experimental_usecase__13__fig_3 | atomic-layer-deposition/experimental-usecase/13/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"panel_id": "a",
"summary": "The line chart illustrates the normalized capacitance (C/Cox) against voltage for three different conditions: before thermal treatment, no barrier capacitor at 600°C, and Ti-Si-N (10 nm) capacitor at 800°C."
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"data": "| Voltage [V] | Before thermal treatment | No barrier capacitor | Ti-Si-N capacitor |\n| --- | --- | --- | --- |\n| -15 | 0.21 | 1.00 | 0.19 |\n| -10 | 0.22 | 1.00 | 0.20 |\n| -5 | 0.35 | 0.60 | 0.25 |\n| 0 | 1.00 | 0.90 | 1.00 |\n| 5 | 1.00 | 1.00 | 1.00 |\n| 10 | 1.00 | 1.00 | ... | [
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FIG. 4. Cross-sectional SEM micrograph of a $20~\mathrm{nm}$ Ti-Si-N film grown by MOALD at $180^{\circ}\mathrm{C}$ . Step coverage of the $\mathrm{Ti - Si - N}$ film is approximately $100\%$ even on the $0.3\mu \mathrm{m}$ diam hole with slightly negative slope and 10:1 aspect ratio. | sci_imageminer__atomic_layer_deposition__experimental_usecase__13__fig_4 | atomic-layer-deposition/experimental-usecase/13/fig_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIGURE 1: Illustration of ALD growth mechanisms and characterizations. (a) Idealized schematic of the mechanisms of ALD process for $\mathrm{WS}_2$ growth and in situ Nb doping. The doping concentration could be controlled by adjusting $\mathrm{NbS}_2$ cycle numbers. (b) Photographs of 400-cycle $\mathrm{WS}_2$ f... | sci_imageminer__atomic_layer_deposition__experimental_usecase__14__figure_1 | atomic-layer-deposition/experimental-usecase/14/figure_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"authors": "Wafer-Scale Synthesis of $\\mathbf{WS}_2$ Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition",
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FIGURE 2: Material characterizations of ALD grown $\mathrm{WS}_2$ films without doping. (a) The XPS fine spectra of W 4f and S 2p for as-deposited and annealed 400-cycle $\mathrm{WS}_2$ film. Both $\mathrm{WS}_2$ and $\mathrm{WS}_{2 + x}$ peaks were observed, with the W/S ratio of 1:2.7. Only $\mathrm{WS}_2$ ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__14__figure_2 | atomic-layer-deposition/experimental-usecase/14/figure_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIGURE 3: Material characterization of Nb-doped p-type $\mathrm{WS}_2$ . (a) The XPS fine spectra of as-deposited and annealed 400-cycle $\mathrm{WS}_2$ with 30-cycle Nb doping. $\mathrm{WS}_2$ $\mathrm{WS}_{2 + \mathrm{x}},$ and $\mathrm{NBs}_2$ were all observed in as-deposited Nb-doped $\mathrm{WS}_2$ film... | sci_imageminer__atomic_layer_deposition__experimental_usecase__14__figure_3 | atomic-layer-deposition/experimental-usecase/14/figure_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIGURE 4: The electrical properties of $\mathrm{WS}_2$ n-FETs and Nb-doped $\mathrm{WS}_2$ p-FETs. (a) CMOS-compatible process flow of FETs and schematic of device structures. (b) The transfer and output characteristics of $\mathrm{WS}_2$ n-FET with $2\mu \mathrm{m}$ gate width and the mobility distribution of ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__14__figure_4 | atomic-layer-deposition/experimental-usecase/14/figure_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIG. 1. Schematic structures of the zirconium precursors $\mathrm{Zr(Cp)(BuDAD)(O^iPr)}$ , $\mathrm{Zr(MeCp)(TMEA)}$ , and $\mathrm{Zr(MeS_Cp)(TEA)}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_1 | atomic-layer-deposition/experimental-usecase/16/fig_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FiG. 2. (a) Thermogravimetric analysis and (b) vapor pressures of the $\mathrm{Zr}$ precursors. | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_2 | atomic-layer-deposition/experimental-usecase/16/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The chart shows the thermogravimetric analysis curves (weight loss percentage as a function of temperature) for the Zr precursors. Zr(Cp)(ᵗBuDAD)(OⁱPr) evaporates with minimal residue, two other precursors show decomposition."
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"data": "| Temperature (°C) | Weight loss (%) | Reagent + Conditions |\n|---|---|---|\n| 6 | 100.8 | Zr(Me_5Cp)(TEA) (vac) |\n| 98 | 100.8 | Zr(Me_5Cp)(TEA) (vac) |\n| 189 | 82.9 | Zr(Me_5Cp)(TEA) (vac) |\n| 231 | 15.3 | Zr(Me_5Cp)(TEA) (vac) |\n| 299 | 13.0 | Zr(Me_5Cp)(TEA) (vac) |\n| 4... | [
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FiG. 3. (a) Film growth rates at different temperatures with (a) water and (b) ozone as the oxygen source. Pulse times for $\mathrm{Zr}$ precursors, $\mathrm{H}_2\mathrm{O}$ and $\mathrm{O_3}$ were $1.0\mathrm{s}$ and purge times for all pulses $1.5\mathrm{s}$ | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_3 | atomic-layer-deposition/experimental-usecase/16/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The chart shows the growth rates against temperatures for Zr precursors when using water as the oxygen source. The growth rate of films with Zr(Cp)(tBuDAD)(O^Pr), Zr(MeCp)(TMEA), and Zr(Me_5Cp)(TEA) compounds increases with temperature, with Zr(Cp)(tBuDAD)(O^Pr) showing the hi... | [
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"data": "| Temperature (°C) | Growth rate (Å/cycle) | Reagent | \n|---|---|---|\n| 198 | 0,22 | Zr(MeCp)(TMEA) |\n| 252 | 0,26 | Zr(MeCp)(TMEA) |\n| 300 | 0,25 | Zr(MeCp)(TMEA) |\n| 348 | 0,27 | Zr(MeCp)(TMEA) |\n| 373 | 0,32 | Zr(MeCp)(TMEA) |\n| 398 | 0,09 | Zr(Me_5Cp)(TEA) |\n| 424 | 0... | [
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"answer": "Zr(Me₅Cp)(TEA) displays the lowest growth rates among 3 precursors. ... | [
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FIG. 4. Film densities at different deposition temperatures with (a) water and (b) ozone as the oxygen source. | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_4 | atomic-layer-deposition/experimental-usecase/16/fig_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The chart shows the density of films deposited with water and Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA), or Zr(Me₅Cp)(TEA) as a function of temperature."
},
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"summary": "The chart shows the density of films deposited with ozone and Zr(Cp)(ᵗBuDAD)(OⁱPr)... | [
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"data": "| Temperature (°C) | Density (g/cm³) | Precursor |\n|---|---|---|\n| 398 | 4.7 | Zr (Me_5Cp) (TEA) |\n| 423 | 4.7 | Zr (Me_5Cp) (TEA) |\n| 200 | 3.8 | Zr (MeCp) (TMEA) |\n| 249 | 4.4 | Zr (MeCp) (TMEA) |\n| 300 | 5.2 | Zr (MeCp) (TMEA) |\n| 325 | 5.6 | Zr (MeCp) (TMEA) |\n| 347 |... | [
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FIG. 5. Film growth rates as a function of $\mathrm{Zr}$ precursor pulse length with ozone as the oxygen source. The pulsing sequence was $\mathrm{x}$ $\mathrm{slx} + 0.5$ sl1.0 sl1.5 s for $\mathrm{Zr}$ pulselpurgel $\mathrm{O_3}$ pulselpurge. | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_5 | atomic-layer-deposition/experimental-usecase/16/fig_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The scatter plot shows the growth rate of a material, when ozone is used as a precursor, as a function of Zr pulse length at different temperatures: Zr(Me₅Cp)(TEA) at 375°C and 300°C, Zr(Cp)(ᵗBuDAD)(OⁱPr) and Zr(MeCp)(TMEA) at 250°C. The growth rate for Zr(MeCp)(TMEA) continu... | [
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"data": "| Zr pulse length (s) | Growth rate (Å/cycle) | Reagent | Temperature (°C) |\n|---|---|---|---|\n| 0,5 | 0,28 | Zr(Me_5Cp)(TEA) | 300 |\n| 1,0 | 0,30 | Zr(Me_5Cp)(TEA) | 300 |\n| 1,5 | 0,30 | Zr(Me_5Cp)(TEA) | 300 |\n| 2,0 | 0,31 | Zr(Me_5Cp)(TEA) | 300 |\n| 2,5 | 0,32 | Zr(Me_5C... | [
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"answer": "No. The growth rate continues to rise as more precursor is dosed, the deposition is therefore likely influenced by CVD-li... | [
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FIG. 6. X-ray diffractograms of the films deposited with (a) $\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ at $250–425^{\circ}\mathrm{C}$ and (b) $\mathrm{Zr(MeCp)TMEA) / H_2O}$ process at $250–375^{\circ}\mathrm{C}$ . Film thicknesses were in (a) $30–40\mathrm{nm}$ and in (b) $50\mathrm{nm}$ except at $375^{\circ}\math... | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_6 | atomic-layer-deposition/experimental-usecase/16/fig_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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},
{
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"summary": "The plot shows XRD pattern for films deposited with Zr(Me... | [
{
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"data": "| Temperature, °C | 2θ | Intensity (arb. units) | Assignment |\n|---|---|---|---|\n|250|30.46| 35| - |\n|250|50.88| 18.29| - |\n|275|30.53| 129| t(011) |\n|275|35.51| 57| - |\n|275|51.03| 57| t(112)/t(020) |\n|275|60.43| 43| - |\n|300|30.53| 428| t(011) |\n|300|34.66| 41| - |\n... | [
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"answer": "The film is amorphous."
},
{
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"question": "Which crys... | [
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"x": 54,
"y": 638,
"width": 615,
"height": 551
}
] | {
"publication_title": "Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$",
"authors": "Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD)",
"doi": "10.1161/16079539",
"... | {
"extraction_method": "MinerU",
"annotation_source": "Sci-ImageMiner per-image JSON",
"classification_source": "repository_annotation_json",
"content_source": "repository_content_json",
"doi_extraction_method": "page0_regex",
"source_image_path": "train/atomic-layer-deposition/experimental-usecase/16/image... | train/atomic-layer-deposition/experimental-usecase/16/images/fig_6.jpg | train/atomic-layer-deposition/experimental-usecase/16/images/fig_6.json | train/atomic-layer-deposition/experimental-usecase/16/content.json | Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$ | Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD) | 10.1161/16079539 | https://doi.org/10.1161/16079539 | 2,019 | Sanni Seppala et al.pdf | fig_6 | 672 | 1,194 | JPEG | a0f42ab39a2795b36737c663cbcfc59aa55aca5026f741240a6065dc54f2beb6 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 7. X-ray diffractograms of films with different thicknesses deposited with (a) $\mathrm{Zr(Cp)(^tBuDAD)(O^iPr) / H_2O}$ process at $375^{\circ}\mathrm{C}$ and (b) $\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ process at $300^{\circ}\mathrm{C}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_7 | atomic-layer-deposition/experimental-usecase/16/fig_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "stacked spectra chart"
},
{
"panel_id": "b",
"label": "stacked spectra chart"
}
] | [
{
"panel_id": "a",
"summary": "The plot shows X-ray diffraction patterns for Zr(Cp)(ᵗBuDAD)(OⁱPr) process with water for films of different thickness (9, 22, and 70 nm)."
},
{
"panel_id": "b",
"summary": "The plot shows X-ray diffraction patterns for Zr(Me₅Cp)(TEA) process with ozone for films o... | [
{
"panel_id": "a",
"data": "| Thickness, nm | 2θ | Intensity (arb. units) | Assignment |\n|---|---|---|---|\n| 9| 30.00 |35| t(001)|\n| 9| 50.42 |35| t(020)|\n|22| 30.00 |132| t(001)|\n|22| 35.07 |7| t(002)/t(110)|\n| 22| 50.42 |21| t(020)|\n| 22|60.42 |7| t(013)/t(022)|\n|70| 30.00 |410| t(001)|\n|70| 35.0... | [
{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "How do the films rank from most crystalline to less crystalline?",
"answer_type": "List",
"answer": "70 nm, 22 nm, 9 nm"
},
{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "Does increasing ... | [
{
"panel_id": "a",
"x": 2,
"y": 2,
"width": 649,
"height": 570
},
{
"panel_id": "b",
"x": 0,
"y": 580,
"width": 652,
"height": 605
}
] | {
"publication_title": "Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$",
"authors": "Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD)",
"doi": "10.1161/16079539",
"... | {
"extraction_method": "MinerU",
"annotation_source": "Sci-ImageMiner per-image JSON",
"classification_source": "repository_annotation_json",
"content_source": "repository_content_json",
"doi_extraction_method": "page0_regex",
"source_image_path": "train/atomic-layer-deposition/experimental-usecase/16/image... | train/atomic-layer-deposition/experimental-usecase/16/images/fig_7.jpg | train/atomic-layer-deposition/experimental-usecase/16/images/fig_7.json | train/atomic-layer-deposition/experimental-usecase/16/content.json | Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$ | Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD) | 10.1161/16079539 | https://doi.org/10.1161/16079539 | 2,019 | Sanni Seppala et al.pdf | fig_7 | 656 | 1,189 | JPEG | 3829a4ac3a781207fd6445fa383838c4bfbb6ff4eafbd8e7bc25c101791d52ea | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FiG. 8. (a) TEM image of the MIM stack and (b) a close-up of the $\mathrm{ZrO_2}$ film. $\mathrm{ZrO_2}$ was deposited with the $\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ process at $300^{\circ}\mathrm{C}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_8 | atomic-layer-deposition/experimental-usecase/16/fig_8 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "image panel"
},
{
"panel_id": "b",
"label": "image panel"
}
] | [] | [] | [] | [
{
"panel_id": "a",
"x": 21,
"y": 39,
"width": 620,
"height": 625
},
{
"panel_id": "b",
"x": 37,
"y": 700,
"width": 604,
"height": 286
}
] | {
"publication_title": "Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$",
"authors": "Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD)",
"doi": "10.1161/16079539",
"... | {
"extraction_method": "MinerU",
"annotation_source": "Sci-ImageMiner per-image JSON",
"classification_source": "repository_annotation_json",
"content_source": "repository_content_json",
"doi_extraction_method": "page0_regex",
"source_image_path": "train/atomic-layer-deposition/experimental-usecase/16/image... | train/atomic-layer-deposition/experimental-usecase/16/images/fig_8.jpg | train/atomic-layer-deposition/experimental-usecase/16/images/fig_8.json | train/atomic-layer-deposition/experimental-usecase/16/content.json | Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$ | Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD) | 10.1161/16079539 | https://doi.org/10.1161/16079539 | 2,019 | Sanni Seppala et al.pdf | fig_8 | 644 | 992 | JPEG | 1823f2f31571be9dd480ab4a3a14a6bd9b73f836c910ebe630f9cd3329304f9d | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 9. Leakage current density curves of the $\mathrm{ZrO_2}$ films deposited with $\mathrm{O_3}$ at $300^{\circ}\mathrm{C}$ . The polarity of the electric field indicates the potential applied to the top electrode. | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_9 | atomic-layer-deposition/experimental-usecase/16/fig_9 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "multiple line chart"
}
] | [
{
"panel_id": "a",
"summary": "The chart shows the leakage current density versus electric field for films deposited at 300°C using ozone and 3 different Zr precursors (Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA) and Zr(Me₅Cp)(TEA))"
}
] | [
{
"panel_id": "a",
"data": "| Electric field (MV/cm) | Current density (A/cm²) | Reagent |\n|---|---|---|\n| -2,5 | 0,000034413049869757 | Zr(Cp)(tBuDAD)(O^iPr) |\n| -2,4 | 0,000043492871235381 | Zr(Cp)(tBuDAD)(O^iPr) |\n| -2,3 | 0,000021544346900319 | Zr(Cp)(tBuDAD)(O^iPr) |\n| -2,3 | 0,000029439237258586 ... | [
{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "Which precursor produces a film with poorest insulation?",
"answer_type": "Factoid",
"answer": "Zr(MeCp)(TMEA)"
},
{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "Is the behaviour of Zr(Me... | [
{
"panel_id": "a",
"x": 2,
"y": 7,
"width": 645,
"height": 493
}
] | {
"publication_title": "Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$",
"authors": "Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD)",
"doi": "10.1161/16079539",
"... | {
"extraction_method": "MinerU",
"annotation_source": "Sci-ImageMiner per-image JSON",
"classification_source": "repository_annotation_json",
"content_source": "repository_content_json",
"doi_extraction_method": "page0_regex",
"source_image_path": "train/atomic-layer-deposition/experimental-usecase/16/image... | train/atomic-layer-deposition/experimental-usecase/16/images/fig_9.jpg | train/atomic-layer-deposition/experimental-usecase/16/images/fig_9.json | train/atomic-layer-deposition/experimental-usecase/16/content.json | Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$ | Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD) | 10.1161/16079539 | https://doi.org/10.1161/16079539 | 2,019 | Sanni Seppala et al.pdf | fig_9 | 648 | 500 | JPEG | 49bd449f26ba57082aa457905da2331b6b06c2da0a6d6ffce4143d0976ca59e9 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FiG.4. rPRA t t t t cursor Ar purge. The process parameters for these depositions are stated in Table I. | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig4 | atomic-layer-deposition/experimental-usecase/18/fig4 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "line chart"
},
{
"panel_id": "b",
"label": "line chart"
},
{
"panel_id": "c",
"label": "line chart"
},
{
"panel_id": "d",
"label": "line chart"
}
] | [
{
"panel_id": "a",
"summary": "ZrN growth per cycle versus substrate temperature shows a low-temperature ALD window with stable GPC and a sharp increase at higher temperatures due to thermally activated, non-self-limiting growth."
},
{
"panel_id": "b",
"summary": "GPC saturation with increasing ... | [
{
"panel_id": "a",
"data": "| Substrate Temperature (°C) | GPC (nm/cycle) |\n|---|---|\n| 100 | ~0.11 |\n| 150 | ~0.10 |\n| 200 | ~0.11 |\n| 250 | ~0.15 |\n| 300 | ~0.55 |"
},
{
"panel_id": "b",
"data": "| TDMAZr pulse (s) | GPC (nm/cycle) |\n|---|---|\n| 0.02 | ~0.07 |\n| 0.04 | ~0.09 |\n| 0.06... | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "Do the growth-per-cycle trends shown in the figure confirm self-limiting PEALD behavior for ZrN under optimized conditions?",
"answer_type": "Yes/No",
"answer": "Yes"
},
{
"panel_id": "b",
"question_type": "Comparat... | [
{
"panel_id": "a",
"x": 10,
"y": 0,
"width": 490,
"height": 330
},
{
"panel_id": "b",
"x": 520,
"y": 0,
"width": 477,
"height": 363
},
{
"panel_id": "c",
"x": 10,
"y": 389,
"width": 476,
"height": 352
},
{
"panel_id": "d",
"x": 520,
... | {
"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
"authors": "Triratna Muneshwar; Ken Cadien",
"doi": "10.1116/14915122",
"do... | {
"extraction_method": "MinerU",
"annotation_source": "Sci-ImageMiner per-image JSON",
"classification_source": "repository_annotation_json",
"content_source": "repository_content_json",
"doi_extraction_method": "page0_regex",
"source_image_path": "train/atomic-layer-deposition/experimental-usecase/18/image... | train/atomic-layer-deposition/experimental-usecase/18/images/fig4.jpg | train/atomic-layer-deposition/experimental-usecase/18/images/fig4.json | train/atomic-layer-deposition/experimental-usecase/18/content.json | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\% \text{H}_2 + 95\% \text{N}_2)$ plasma $\odot$ | Triratna Muneshwar; Ken Cadien | 10.1116/14915122 | https://doi.org/10.1116/14915122 | 2,015 | Triratna Muneshwar et al.pdf | fig4 | 997 | 741 | JPEG | 845e3a13ad4767a45632c671a54f084ac8248c6d8b390930dd902684da8710fe | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 1. (Color online) (a) ALD150LX reactor design schematic highlighting TDMAZr and forming gas delivery lines and the M2000DI spectroscopic ellipsometer for in-situ ALD growth characterization. (b) Precursor and plasma pulsing sequence for a ZrN PEALD cycle. | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig_1 | atomic-layer-deposition/experimental-usecase/18/fig_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "apparatus diagram"
},
{
"panel_id": "b",
"label": "process timing diagram"
}
] | [
{
"panel_id": "a",
"summary": "Plasma-enhanced ALD reactor configuration for ZrN deposition, showing TDMAZr delivery with Ar carrier gas, forming-gas plasma generation via ICP, substrate placement, pumping, and in-situ spectroscopic ellipsometry for real-time growth monitoring, enabling low-temperature, pla... | [
{
"panel_id": "a",
"data": ""
},
{
"panel_id": "b",
"data": "| Time step | TDMAZr pulse | Forming gas | Plasma power | Ar gas flow |\n|---|---|---|---|---|\n| t1 | ON | OFF | OFF | ON |\n| t2 | OFF | OFF | OFF | ON |\n| t3 | OFF | ON | ON | ON |\n| t4 | OFF | OFF | OFF | ON |"
}
] | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "Does the figure show temporally separated precursor and plasma steps required for self-limiting PEALD growth?",
"answer_type": "Yes/No",
"answer": "Yes"
},
{
"panel_id": "b",
"question_type": "Comparative/Trend",
... | [
{
"panel_id": "a",
"x": 13,
"y": 5,
"width": 667,
"height": 532
},
{
"panel_id": "b",
"x": 4,
"y": 624,
"width": 673,
"height": 254
}
] | {
"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
"authors": "Triratna Muneshwar; Ken Cadien",
"doi": "10.1116/14915122",
"do... | {
"extraction_method": "MinerU",
"annotation_source": "Sci-ImageMiner per-image JSON",
"classification_source": "repository_annotation_json",
"content_source": "repository_content_json",
"doi_extraction_method": "page0_regex",
"source_image_path": "train/atomic-layer-deposition/experimental-usecase/18/image... | train/atomic-layer-deposition/experimental-usecase/18/images/fig_1.jpg | train/atomic-layer-deposition/experimental-usecase/18/images/fig_1.json | train/atomic-layer-deposition/experimental-usecase/18/content.json | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\% \text{H}_2 + 95\% \text{N}_2)$ plasma $\odot$ | Triratna Muneshwar; Ken Cadien | 10.1116/14915122 | https://doi.org/10.1116/14915122 | 2,015 | Triratna Muneshwar et al.pdf | fig_1 | 684 | 877 | JPEG | ae09ad2500e9ed29218bef4bc10a86c337e28fbb6286e674a9235b8a4b3ecc0d | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 2. (a) SE parameters $(\Psi ,\Delta)$ measured on blank Si substrate (solid line) and after 10 cycles $\mathrm{ZrN}$ deposition (dotted line). (b) The dynamic SE parameter $\Delta$ measured at $4.0\mathrm{eV}$ for 10 cycles $\mathrm{ZrN}$ deposition. Systematic variation in $\Delta$ with precursor puls... | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig_2 | atomic-layer-deposition/experimental-usecase/18/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "multi-axis chart"
},
{
"panel_id": "b",
"label": "line chart"
}
] | [
{
"panel_id": "a",
"summary": "Spectroscopic ellipsometry parameters Ψ and Δ versus photon energy for a blank Si substrate and after 10 ZrN PEALD cycles. Spectral shifts after deposition confirm ultrathin ZrN film formation and demonstrate SE sensitivity to early-stage growth."
},
{
"panel_id": "b",... | [
{
"panel_id": "a",
"data": "| Photon Energy (eV) | Δ (°) | Ψ (°) |\n|---|---|---|\n| 1.0 | ~175 | ~35 |\n| 2.0 | ~170 | ~33 |\n| 3.0 | ~165 | ~32 |\n| 4.0 | ~150 | ~30 |\n| 5.0 | ~165 | ~31 |\n| 6.0 | ~170 | ~32 |"
},
{
"panel_id": "b",
"data": "| Time (s) | Δ (°) |\n|---|---|\n| 100 | ~144 |\n|... | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "Does the figure provide in-situ evidence of self-limiting, cycle-by-cycle ZrN growth during PEALD?",
"answer_type": "Yes/No",
"answer": "Yes"
},
{
"panel_id": "b",
"question_type": "Comparative/Trend",
"question... | [
{
"panel_id": "a",
"x": 13,
"y": 9,
"width": 494,
"height": 357
},
{
"panel_id": "b",
"x": 524,
"y": 11,
"width": 479,
"height": 355
}
] | {
"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
"authors": "Triratna Muneshwar; Ken Cadien",
"doi": "10.1116/14915122",
"do... | {
"extraction_method": "MinerU",
"annotation_source": "Sci-ImageMiner per-image JSON",
"classification_source": "repository_annotation_json",
"content_source": "repository_content_json",
"doi_extraction_method": "page0_regex",
"source_image_path": "train/atomic-layer-deposition/experimental-usecase/18/image... | train/atomic-layer-deposition/experimental-usecase/18/images/fig_2.jpg | train/atomic-layer-deposition/experimental-usecase/18/images/fig_2.json | train/atomic-layer-deposition/experimental-usecase/18/content.json | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\% \text{H}_2 + 95\% \text{N}_2)$ plasma $\odot$ | Triratna Muneshwar; Ken Cadien | 10.1116/14915122 | https://doi.org/10.1116/14915122 | 2,015 | Triratna Muneshwar et al.pdf | fig_2 | 1,003 | 366 | JPEG | f4210e67b9670ff5a81442730500152efe3b346a34cf84ffeec5430209fa7b72 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 |
End of preview. Expand in Data Studio
Sci-ImageMiner
Sci-ImageMiner is a scientific-image dataset for multimodal figure understanding. The initial release focuses on figures extracted from atomic layer deposition (ALD) and atomic layer etching (ALE) publications in materials science. The schema is designed to support future scientific domains, subdomains, image types, data sources, and annotation tasks.
This dataset contains mixed-rights content. Metadata and annotations are described as CC BY 4.0 in the upstream repository, while source images are publisher/author copyrighted and are provided for non-commercial research use only unless the original source license grants broader rights.
Dataset Purpose
The dataset supports research on scientific image understanding tasks:
- panel-level figure type classification;
- panel localization with bounding boxes;
- panel-level summarization;
- data extraction from plots and scientific visuals;
- visual question answering grounded in scientific figures.
Initial Scope
The current broad domain is:
materials_science
The initial subdomains represented by records are:
atomic_layer_deposition
atomic_layer_etching
The current source data also distinguishes:
experimental
simulation
These values describe the current release only. Future domains such as chemistry, biology, physics, earth science, medicine, or engineering are not included unless records are actually added and curated.
Splits
The dataset exposes three Hugging Face splits:
| Split | Records |
|---|---|
train |
1,170 |
validation |
201 |
test |
580 |
| Total | 1,951 |
The public rows include one split field with the Hugging Face split value.
Dataset Structure
The dataset is packaged in an ImageFolder-compatible layout:
train/
metadata.jsonl
images/
validation/
metadata.jsonl
images/
test/
metadata.jsonl
images/
Each metadata row references its image with file_name. When loaded with
Hugging Face Datasets, this becomes an image column that renders in the
Dataset Viewer.
Field Definitions
Core fields:
| Field | Description |
|---|---|
image |
Hugging Face image feature created from file_name. |
caption |
Source figure caption when available. |
id |
Stable dataset-level record id. |
sample_id |
Original source annotation sample_id. |
split |
Hugging Face split. |
domain |
Broad scientific domain. |
subdomain |
Controlled scientific subdomain. |
topic |
Reserved for curated lower-level topics or processes. |
study_type |
Experimental or simulation study type. |
classification |
Source classification annotations as a list of {panel_id, label} entries. |
summarization |
Source summarization annotations as a list of {panel_id, summary} entries. |
data_extraction |
Source data extraction annotations as a list of {panel_id, data} entries. |
vqa |
Source visual question-answering annotations as a list of {panel_id, question_type, question, answer_type, answer} entries. |
bbox |
Source bounding boxes as a list of {panel_id, x, y, width, height} entries. |
source |
Publication and source-file provenance. |
provenance |
Extraction and annotation provenance. |
schema_version |
Dataset schema version. |
The source annotation fields use panel ids such as a, b, and c. They are
stored as lists rather than arbitrary-key objects so that Hugging Face can infer
a stable viewer schema. If an annotation type does not apply or was not provided
for a figure, it is represented as an empty list.
Images and Provenance
Images were extracted from published scientific articles. Source PDFs and
content.json extraction outputs are present in the upstream repository. The
conversion preserves relative paths to:
- original image files;
- original annotation JSON files;
- source
content.jsonfiles; - source PDF filenames where available.
Publication metadata such as title, author line, DOI, and publication year is best-effort and should be reviewed before being treated as authoritative.
Loading
After upload, users should be able to load the dataset with:
from datasets import load_dataset
dataset = load_dataset("SciKnowOrg/Sci-ImageMiner")
For local generated artifacts:
from datasets import load_dataset
dataset = load_dataset("imagefolder", data_dir="hf/dataset")
Display an image:
example = dataset["train"][0]
image = example["image"]
image.show()
print(example["caption"])
print(example["classification"])
print(example["bbox"])
print(example["vqa"])
Known Limitations
- The initial release focuses only on ALD and ALE materials-science figures.
- Some records have classification and bounding boxes but no summarization, data extraction, or VQA annotations.
- Some captions or DOI fields are missing or best-effort extracted.
- Byte-identical image duplicates exist, including some across original splits. Existing split assignments are preserved, but users should consider this when using the data as a benchmark.
- The source image redistribution status needs human review before public upload.
Licensing and Redistribution
Annotations and metadata are described in the upstream repository as CC BY 4.0.
Images were extracted from published scientific articles. Copyright remains with original authors and/or publishers. The dataset repository uses a mixed-rights license marker rather than a plain CC BY marker because the image files are not released under CC BY 4.0 by this dataset. Treat source images as non-commercial research-use-only unless the original publication license grants broader rights.
Maintainers should decide whether the public dataset must be gated or whether a metadata-only variant is needed for images whose redistribution rights are not clear.
Contributions
Community contributions should follow hf/CONTRIBUTING_DATASET.md in the upstream
repository. Contributions must include:
- image files;
metadata.jsonl;- source publication provenance;
- source-style annotation fields;
- image reuse rights or license information;
- validation output.
New vocabulary values for domains, subdomains, or study types should be proposed through pull requests to the versioned vocabulary files. Contributors must not upload images they lack permission to redistribute.
Citation
The Sci-ImageMiner project vision is described in the following working paper, pre-released on Zenodo. Please cite this paper if you find the project useful:
@misc{d_souza_2025_17130928,
author = {D'Souza, Jennifer},
title = {A Pathway to General-Purpose Scientific AI:
Multimodal Comprehension of Scientific Images},
month = sep,
year = 2025,
publisher = {Zenodo},
doi = {10.5281/zenodo.17130928},
url = {https://doi.org/10.5281/zenodo.17130928},
}
Sci-ImageMiner was also featured as the ICDAR 2026 Competition on Information Extraction from Atomic Layer Deposition/Etching (ALD/E) Scientific Figures, organized as part of the ICDAR 2026 competitions. Please cite the competition report when referring to the benchmark, dataset, competition, or associated information-extraction tasks:
@article{ahmed2026icdar,
title = {ICDAR 2026 Competition on Information Extraction from
Atomic Layer Deposition/Etching (ALD/E) Scientific Figures},
author = {Ahmed, Fahad and Auer, S{\"o}ren and D'Souza, Jennifer},
journal = {arXiv preprint arXiv:2607.26848},
year = {2026},
url = {https://arxiv.org/abs/2607.26848}
}
Acknowledgements
Within Sci-ImageMiner, the development of the expert-annotated ALD/E-ImageMiner benchmark resource was funded by the NFDI4DataScience initiative, funded by the German Research Foundation (DFG, Grant ID: 460234259) under the Speedboat Annotation Project funding scheme.
This research endeavor is conducted in the context of the AI-Aware Pathways to Sustainable Semiconductor Process and Manufacturing Technologies (AWASES) initiative (Mackus et al., 2024), funded by Merck and Intel, with collaboration between Eindhoven University, Leibniz University Hannover's L3S Research Centre, and University of Warwick. AWASES hosts three fully funded PhD positions and supports advances in generative AI, multimodal models, and FAIR scientific knowledge graph construction.
Versioning
This draft uses schema version 1.0.0.
Schema changes should be documented in the dataset card and in release notes. Additive fields are preferred. Breaking changes should require a new major schema version or a new dataset configuration.
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